TW201401608A - 有機發光裝置 - Google Patents
有機發光裝置 Download PDFInfo
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- TW201401608A TW201401608A TW102110608A TW102110608A TW201401608A TW 201401608 A TW201401608 A TW 201401608A TW 102110608 A TW102110608 A TW 102110608A TW 102110608 A TW102110608 A TW 102110608A TW 201401608 A TW201401608 A TW 201401608A
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- Prior art keywords
- layer
- organic
- emitting device
- electrode layer
- organic light
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- 239000010410 layer Substances 0.000 claims description 372
- 239000012044 organic layer Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 43
- 238000002347 injection Methods 0.000 claims description 41
- 239000007924 injection Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 27
- 150000002894 organic compounds Chemical class 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 7
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 2
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical compound F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 2
- 239000011698 potassium fluoride Substances 0.000 claims 3
- 235000003270 potassium fluoride Nutrition 0.000 claims 2
- JFVIFADORYNYTH-UHFFFAOYSA-K [F-].[Y+3].[F].[F-].[F-] Chemical compound [F-].[Y+3].[F].[F-].[F-] JFVIFADORYNYTH-UHFFFAOYSA-K 0.000 claims 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 claims 1
- MZQZQKZKTGRQCG-UHFFFAOYSA-J thorium tetrafluoride Chemical compound F[Th](F)(F)F MZQZQKZKTGRQCG-UHFFFAOYSA-J 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 3
- -1 poly(ethylene terephthalate) Polymers 0.000 description 29
- 238000000576 coating method Methods 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 14
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 13
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 239000004305 biphenyl Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000007983 Tris buffer Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 150000004703 alkoxides Chemical class 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 3
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 229920000547 conjugated polymer Polymers 0.000 description 3
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 3
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- SXXNJJQVBPWGTP-UHFFFAOYSA-K tris[(4-methylquinolin-8-yl)oxy]alumane Chemical compound [Al+3].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-] SXXNJJQVBPWGTP-UHFFFAOYSA-K 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 2
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000733 Li alloy Inorganic materials 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000005605 benzo group Chemical group 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 229960000956 coumarin Drugs 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910003471 inorganic composite material Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229960003540 oxyquinoline Drugs 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical compound C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 125000005504 styryl group Chemical group 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- ODIGIKRIUKFKHP-UHFFFAOYSA-N (n-propan-2-yloxycarbonylanilino) acetate Chemical compound CC(C)OC(=O)N(OC(C)=O)C1=CC=CC=C1 ODIGIKRIUKFKHP-UHFFFAOYSA-N 0.000 description 1
- OURODNXVJUWPMZ-UHFFFAOYSA-N 1,2-diphenylanthracene Chemical compound C1=CC=CC=C1C1=CC=C(C=C2C(C=CC=C2)=C2)C2=C1C1=CC=CC=C1 OURODNXVJUWPMZ-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- QKLPIYTUUFFRLV-YTEMWHBBSA-N 1,4-bis[(e)-2-(2-methylphenyl)ethenyl]benzene Chemical compound CC1=CC=CC=C1\C=C\C(C=C1)=CC=C1\C=C\C1=CC=CC=C1C QKLPIYTUUFFRLV-YTEMWHBBSA-N 0.000 description 1
- BCASZEAAHJEDAL-PHEQNACWSA-N 1,4-bis[(e)-2-(4-methylphenyl)ethenyl]benzene Chemical compound C1=CC(C)=CC=C1\C=C\C(C=C1)=CC=C1\C=C\C1=CC=C(C)C=C1 BCASZEAAHJEDAL-PHEQNACWSA-N 0.000 description 1
- SWYYRSGBEBXIRE-UHFFFAOYSA-N 1,4-bis[2-(3-ethylphenyl)ethenyl]benzene Chemical compound CCC1=CC=CC(C=CC=2C=CC(C=CC=3C=C(CC)C=CC=3)=CC=2)=C1 SWYYRSGBEBXIRE-UHFFFAOYSA-N 0.000 description 1
- XBDQJALUKGQTAV-UHFFFAOYSA-N 1,4-bis[2-(3-methylphenyl)ethenyl]benzene Chemical compound CC1=CC=CC(C=CC=2C=CC(C=CC=3C=C(C)C=CC=3)=CC=2)=C1 XBDQJALUKGQTAV-UHFFFAOYSA-N 0.000 description 1
- QVZPHMHVQOWCGO-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical group C1(=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC=C1.C1(=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC=C1 QVZPHMHVQOWCGO-UHFFFAOYSA-N 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 description 1
- BRFDXZHUQCOPKE-UHFFFAOYSA-N 1-methyl-3-(2-phenylethenyl)benzene Chemical compound CC1=CC=CC(C=CC=2C=CC=CC=2)=C1 BRFDXZHUQCOPKE-UHFFFAOYSA-N 0.000 description 1
- GUPMCMZMDAGSPF-UHFFFAOYSA-N 1-phenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1[C](C=C[CH2])C1=CC=CC=C1 GUPMCMZMDAGSPF-UHFFFAOYSA-N 0.000 description 1
- IANXAXNUNBAWBA-UHFFFAOYSA-N 2,2,3-trimethylundecane Chemical compound CCCCCCCCC(C)C(C)(C)C IANXAXNUNBAWBA-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- ZGXQLVRLPJXTIK-LQIBPGRFSA-N 2,5-bis[(e)-2-(4-methoxyphenyl)ethenyl]pyrazine Chemical compound C1=CC(OC)=CC=C1\C=C\C(N=C1)=CN=C1\C=C\C1=CC=C(OC)C=C1 ZGXQLVRLPJXTIK-LQIBPGRFSA-N 0.000 description 1
- PAJSTGVSGZWCGO-UHFFFAOYSA-N 2,5-bis[2-(4-ethylphenyl)ethenyl]pyrazine Chemical compound C1=CC(CC)=CC=C1C=CC(N=C1)=CN=C1C=CC1=CC=C(CC)C=C1 PAJSTGVSGZWCGO-UHFFFAOYSA-N 0.000 description 1
- BFQSAUNFPAHVRZ-UHFFFAOYSA-N 2,5-bis[2-(4-methylphenyl)ethenyl]pyrazine Chemical compound C1=CC(C)=CC=C1C=CC(N=C1)=CN=C1C=CC1=CC=C(C)C=C1 BFQSAUNFPAHVRZ-UHFFFAOYSA-N 0.000 description 1
- UUNIOFWUJYBVGQ-UHFFFAOYSA-N 2-amino-4-(3,4-dimethoxyphenyl)-10-fluoro-4,5,6,7-tetrahydrobenzo[1,2]cyclohepta[6,7-d]pyran-3-carbonitrile Chemical compound C1=C(OC)C(OC)=CC=C1C1C(C#N)=C(N)OC2=C1CCCC1=CC=C(F)C=C12 UUNIOFWUJYBVGQ-UHFFFAOYSA-N 0.000 description 1
- SVNTXZRQFPYYHV-UHFFFAOYSA-N 2-methyl-1,4-bis[2-(2-methylphenyl)ethenyl]benzene Chemical compound CC1=CC=CC=C1C=CC(C=C1C)=CC=C1C=CC1=CC=CC=C1C SVNTXZRQFPYYHV-UHFFFAOYSA-N 0.000 description 1
- JBIJLHTVPXGSAM-UHFFFAOYSA-N 2-naphthylamine Chemical compound C1=CC=CC2=CC(N)=CC=C21 JBIJLHTVPXGSAM-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- CNGYZEMWVAWWOB-VAWYXSNFSA-N 5-[[4-anilino-6-[bis(2-hydroxyethyl)amino]-1,3,5-triazin-2-yl]amino]-2-[(e)-2-[4-[[4-anilino-6-[bis(2-hydroxyethyl)amino]-1,3,5-triazin-2-yl]amino]-2-sulfophenyl]ethenyl]benzenesulfonic acid Chemical compound N=1C(NC=2C=C(C(\C=C\C=3C(=CC(NC=4N=C(N=C(NC=5C=CC=CC=5)N=4)N(CCO)CCO)=CC=3)S(O)(=O)=O)=CC=2)S(O)(=O)=O)=NC(N(CCO)CCO)=NC=1NC1=CC=CC=C1 CNGYZEMWVAWWOB-VAWYXSNFSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- CWBWXBQUGUPYTQ-UHFFFAOYSA-J C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.[Zr+4].C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC Chemical compound C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.[Zr+4].C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC.C(CCC)OC(CCCCCCCCCCCCCCCCC(=O)[O-])(OCCCC)OCCCC CWBWXBQUGUPYTQ-UHFFFAOYSA-J 0.000 description 1
- LVHOUUBUGYQWFB-UHFFFAOYSA-N C1(=CC=C2C=CC3=CC=CC4=CC=C1C2=C34)C=CC3=NC=C(N=C3)C=CC3=CC=C4C=CC2=CC=CC1=CC=C3C4=C21.N2(C=CC1=CC=CC=C21)C=CC2=NC=C(N=C2)C=CN2C=CC1=CC=CC=C21 Chemical compound C1(=CC=C2C=CC3=CC=CC4=CC=C1C2=C34)C=CC3=NC=C(N=C3)C=CC3=CC=C4C=CC2=CC=CC1=CC=C3C4=C21.N2(C=CC1=CC=CC=C21)C=CC2=NC=C(N=C2)C=CN2C=CC1=CC=CC=C21 LVHOUUBUGYQWFB-UHFFFAOYSA-N 0.000 description 1
- MTYZNJXNXMZCIE-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12 Chemical compound C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12 MTYZNJXNXMZCIE-UHFFFAOYSA-N 0.000 description 1
- LQDZCQCEWWQFBG-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12 Chemical compound C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12 LQDZCQCEWWQFBG-UHFFFAOYSA-N 0.000 description 1
- RJMSUVFEAZNPIE-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC2=CC=CC=C2C=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC2=CC=CC=C2C=C1 Chemical compound C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC2=CC=CC=C2C=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=C(C=C2C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC2=CC=CC=C2C=C1 RJMSUVFEAZNPIE-UHFFFAOYSA-N 0.000 description 1
- CQWBOXAGSYVFEY-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=C(C=CC=C1)C1=CC=C(C=C1)C1=CC=CC=C1 Chemical group C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=C(C=CC=C1)C1=CC=C(C=C1)C1=CC=CC=C1 CQWBOXAGSYVFEY-UHFFFAOYSA-N 0.000 description 1
- CIJFIZOWCCKYIA-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1 Chemical compound C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1 CIJFIZOWCCKYIA-UHFFFAOYSA-N 0.000 description 1
- LAHFGAWUCUJKGR-UHFFFAOYSA-N C1(=CC=CC=C1)N(C1=CC2=CC=C3C=CC=C4C=CC(=C1)C2=C43)C4=CC=C(C=C4)C4=CC=C(C=C4)N(C4=CC=CC=C4)C4=CC3=CC=C2C=CC=C1C=CC(=C4)C3=C12.C1(=CC=CC=C1)N(C1=CC=2CC3=CC=CC=C3C2C=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=2CC3=CC=CC=C3C2C=C1 Chemical group C1(=CC=CC=C1)N(C1=CC2=CC=C3C=CC=C4C=CC(=C1)C2=C43)C4=CC=C(C=C4)C4=CC=C(C=C4)N(C4=CC=CC=C4)C4=CC3=CC=C2C=CC=C1C=CC(=C4)C3=C12.C1(=CC=CC=C1)N(C1=CC=2CC3=CC=CC=C3C2C=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=2CC3=CC=CC=C3C2C=C1 LAHFGAWUCUJKGR-UHFFFAOYSA-N 0.000 description 1
- JUBGUILIQWWMJV-UHFFFAOYSA-N C1(=CC=CC=C1)N(C1=CC2=CC=C3C=CC=C4C=CC(=C1)C2=C43)C4=CC=C(C=C4)C4=CC=C(C=C4)N(C4=CC=CC=C4)C4=CC3=CC=C2C=CC=C1C=CC(=C4)C3=C12.C1(=CC=CC=C1)N(C=1CC2=CC=CC=C2C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C=1CC2=CC=CC=C2C1 Chemical group C1(=CC=CC=C1)N(C1=CC2=CC=C3C=CC=C4C=CC(=C1)C2=C43)C4=CC=C(C=C4)C4=CC=C(C=C4)N(C4=CC=CC=C4)C4=CC3=CC=C2C=CC=C1C=CC(=C4)C3=C12.C1(=CC=CC=C1)N(C=1CC2=CC=CC=C2C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C=1CC2=CC=CC=C2C1 JUBGUILIQWWMJV-UHFFFAOYSA-N 0.000 description 1
- ZTLXJAANDIPTHT-UHFFFAOYSA-N C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12 Chemical group C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12 ZTLXJAANDIPTHT-UHFFFAOYSA-N 0.000 description 1
- XNWRIZCHLZMRCE-UHFFFAOYSA-N C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12 Chemical compound C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12 XNWRIZCHLZMRCE-UHFFFAOYSA-N 0.000 description 1
- NKFQZQMBYDPGRJ-UHFFFAOYSA-N C1=C(C=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC=C(C=C1)C=1C(=CC(=CC1)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1.C1=C(C=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC=C(C=C1)C=1C(=CC(=CC1)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1 Chemical group C1=C(C=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC=C(C=C1)C=1C(=CC(=CC1)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1.C1=C(C=CC2=CC=CC=C12)N(C1=CC2=CC=CC=C2C=C1)C1=CC=C(C=C1)C=1C(=CC(=CC1)N(C1=CC2=CC=CC=C2C=C1)C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1 NKFQZQMBYDPGRJ-UHFFFAOYSA-N 0.000 description 1
- NTDCMELBRMGJFF-UHFFFAOYSA-N C1CC2=C(C=CC3=CC=CC1=C23)N(C2=CC=CC=C2)C2=CC=C(C=C2)C2=CC=C(C=C2)N(C2=C3CCC=1C=CC=C(C=C2)C13)C1=CC=CC=C1.N1C=C(C3=CC=CC=C13)N(C1=CC=CC=C1)C1=C(C=CC=C1)C1=CC=CC=C1 Chemical group C1CC2=C(C=CC3=CC=CC1=C23)N(C2=CC=CC=C2)C2=CC=C(C=C2)C2=CC=C(C=C2)N(C2=C3CCC=1C=CC=C(C=C2)C13)C1=CC=CC=C1.N1C=C(C3=CC=CC=C13)N(C1=CC=CC=C1)C1=C(C=CC=C1)C1=CC=CC=C1 NTDCMELBRMGJFF-UHFFFAOYSA-N 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- NFVXJVQRVRPQKZ-UHFFFAOYSA-N CN(C1=CC(=C(C=C1)C(C1=CC=CC=C1)C1=C(C=C(C=C1)N(C)C)C)C)C.CN(C1=CC(=C(C=C1)C(C1=CC=CC=C1)C1=C(C=C(C=C1)N(C)C)C)C)C Chemical compound CN(C1=CC(=C(C=C1)C(C1=CC=CC=C1)C1=C(C=C(C=C1)N(C)C)C)C)C.CN(C1=CC(=C(C=C1)C(C1=CC=CC=C1)C1=C(C=C(C=C1)N(C)C)C)C)C NFVXJVQRVRPQKZ-UHFFFAOYSA-N 0.000 description 1
- 229910000882 Ca alloy Inorganic materials 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 101100192157 Mus musculus Psen2 gene Proteins 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 150000005010 aminoquinolines Chemical class 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 150000004697 chelate complex Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- SKCYYUVGYUAJCX-UHFFFAOYSA-N chrysene;triphenylene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21.C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SKCYYUVGYUAJCX-UHFFFAOYSA-N 0.000 description 1
- CTQMJYWDVABFRZ-UHFFFAOYSA-N cloxiquine Chemical compound C1=CN=C2C(O)=CC=C(Cl)C2=C1 CTQMJYWDVABFRZ-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- BOOQTIHIKDDPRW-UHFFFAOYSA-N dipropyltryptamine Chemical compound C1=CC=C2C(CCN(CCC)CCC)=CNC2=C1 BOOQTIHIKDDPRW-UHFFFAOYSA-N 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- UARGAUQGVANXCB-UHFFFAOYSA-N ethanol;zirconium Chemical compound [Zr].CCO.CCO.CCO.CCO UARGAUQGVANXCB-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- SBRDZYRKYTVIQH-UHFFFAOYSA-N n-[4-[4-(n-anthracen-1-ylanilino)-4-phenylcyclohexa-1,5-dien-1-yl]phenyl]-n-phenylanthracen-1-amine Chemical group C1C=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC4=CC=CC=C4C=C3C=CC=2)C=CC1(C=1C=CC=CC=1)N(C=1C2=CC3=CC=CC=C3C=C2C=CC=1)C1=CC=CC=C1 SBRDZYRKYTVIQH-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- BLFVVZKSHYCRDR-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-2-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-2-amine Chemical group C1=CC=CC=C1N(C=1C=C2C=CC=CC2=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 BLFVVZKSHYCRDR-UHFFFAOYSA-N 0.000 description 1
- TUPXWIUQIGEYST-UHFFFAOYSA-N n-[4-[4-(n-phenanthren-2-ylanilino)phenyl]phenyl]-n-phenylphenanthren-2-amine Chemical group C1=CC=CC=C1N(C=1C=C2C(C3=CC=CC=C3C=C2)=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C(C4=CC=CC=C4C=C3)=CC=2)C=C1 TUPXWIUQIGEYST-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- PPPLOTGLKDTASM-UHFFFAOYSA-A pentasodium;pentafluoroaluminum(2-);tetrafluoroalumanuide Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3] PPPLOTGLKDTASM-UHFFFAOYSA-A 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- CXNQUHPJUJGOHC-UHFFFAOYSA-J prop-2-enoate;zirconium(4+) Chemical compound [Zr+4].[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C CXNQUHPJUJGOHC-UHFFFAOYSA-J 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- CRTBNOWPBHJICM-UHFFFAOYSA-N pyrazine Chemical compound C1=CN=CC=N1.C1=CN=CC=N1 CRTBNOWPBHJICM-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010420 shell particle Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H05B33/00—Electroluminescent light sources
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Abstract
本發明係提供一種有機發光裝置(OLED)及一種照明設備。所示之OLED可將反射電極層之光吸收減至最小,並藉由表面電漿(surface plasmon)使耦合漸漸消失,且顯示優異的發光效果。
Description
本發明係關於一種有機發光裝置(organic light emitting device(OLED))、及一照明設備。
一般而言,OLED包括一基板、一第一電極層、一包括一發光層之有機層及一第二電極層。
於稱為底部發光裝置之結構中,該第一電極層可為一透明電極層,且該第二電極層可為一反射電極層。再者,於稱為頂部發光裝置之結構中,可形成作為一反射電極層之該第一電極層,且可形成作為一透明電極層之該第二電極層。
透過兩電極層分別地注入電子與電洞,且所注入的電子與電洞係於發光層中再結合,導致產生光線。該光線可發光至底部發光裝置中的基板,或發光至於頂部發光裝置中的第二電極層。
於OLED的結構中,一般使用作為該透明電極層之銦錫氧化物(indium tin oxide,ITO)、該有機層、及該一般以玻璃形成之基板,分別具有約2.0、1.8及1.5之折射率。
在這樣的折射率關係中,例如,於底部發光裝置之有機發光層中所產生的光線係由於全內反射現象,而受困於該有機層及該第一電極層間之介面或該基板中,並且只有發光極少量的光線。
本發明係提供一OLED之基板、及一照明設備。
本發明之一實施態樣所提供之OLED,包括:一電子注入電極層及一電洞注入電極層。在OLED中,該電子注入電極層及該電洞注入電極層可彼此相對,且一有機堆疊的結構可存在於其間。該有機堆疊的結構可為包括至少一層的含一功能性有機材料之堆疊結構。該有機堆疊的結構可包括一低折射有機層。在此使用的「低折射有機層」一詞可指具有一有機化合物且折射率為1.7以下之一層。在此使用的「折射率」一詞除非另有定義,其可指相對於具有550至633nm波長的光之折射率。該有機堆疊結構可包括一發光層與該低折射有機層。
該OLED可包括一散射層。例如,該散射層可形成於與該電子或電洞注入電極層接觸或相鄰之一表面,尤其是該電洞注入電極層。在此,與該散射層接觸或相鄰之該電極層之一表面可相對於與該有機堆疊結構接觸或相鄰之電極層之表面的一表面。
在一實施例中,該OLED可更包含一基底層。
在該基底層的頂部,可依序形成該電子或電洞注入電極層、該有機堆疊結構、及電洞或電子注入電極層之結構。在此結構中,該散射層可配置於該基底層與在該基底層頂部之該電子或電洞注入電極層之間。
圖1係提供了一種OLED之結構100,其中,在一基層105上依序堆疊一電洞注入電極層101、一有機堆疊結構103及一電子注入電極層102,且在該電洞注入電極層101與該基底層105之間形成一散射層104。該有機堆疊結構103包括一低折射有機層1031及一發光層1032。
作為該基底層,可依需要而使用一適合的材料而沒有特別地限制。在一實施例中,該OLED可為一底部發光裝置,且在此情況,該基底層可為一透明基底層,例如,相對於在具有可見光波長之光而具有50、60、70、80或90%以上之透光度之基底層。作為該透明基底層,可使用一玻璃基底層或一透明聚合物基底層。作為該玻璃基底層,可使用一包含鹼石灰玻璃、含鋇/鍶的玻璃、鉛玻璃、鋁矽酸鹽玻璃、硼矽酸鹽玻璃、硼矽酸鋇玻璃、或石英之基底層;以及,作為該聚合物基底層,可使用一包含聚碳酸酯(polycarbonate,PC)、丙烯酸樹脂、聚(對苯二甲酸乙二酯)(poly(ethylene terephthalate),PET)、聚(醚硫醚)(poly(ether sulfide),PES)、或聚碸(polysulfone,PS)之基底層,但本發明並不僅限於此。視需要,該基底層可為一具有驅動薄膜電晶體(TFT)之薄膜電晶體基板。
舉例來說,該電洞注入層可使用具有相當高的
功率函數之材料而形成。例如,該電洞注入電極層可包含金屬、合金、具有約4.0eV以上的功率函數(work function)之導電性化合物、或其至少兩個之混合物。此材料可為導電性透明材料,例如,如金之金屬、CuI、氧化銦錫(ITO)、氧化銦鋅(IZO)、ZnO、SnO2或In2O3。該電洞注入電極層可使用上述材料並藉由如真空沉積法或濺鍍法而形成。該電洞注入電極層可具有如10%以上的透光率及幾百Ω/sq以下之表面阻力(surface resistance),例如,100Ω/sq以下。該電洞注入電極層的厚度可依據透光率或表面阻力而定,但通常可為50至150nm或10至200nm。
舉例來說,該電子注入電極層可使用具有較小功率函數之材料來形成。而該種材料可使用,如鉀、鋰、鈉、鎂、鑭、銫、鈣、鍶、鋇、鋁、銀、銦、錫、鋅或鋯之金屬或其兩種以上之合金材料,例如鎂/銦合金、鎂/鋁合金、鋁/鋰合金、鋁/鈧/鋰合金、鎂/銀合金或鋁/鈣合金。該電子注入電極層可使用如沉積法或濺射法而形成。
於該OLED中,在該電子及電洞注入電極層之間,形成在該基底層的電極層可為一透明電極層,且形成在該有機堆疊結構之電極層可為一反射電極層。
該有機堆疊結構至少包括一低反射有基層及一發光層。
該低折射有機層可為包括一有機化合物之一層,例如為具有1.7以下、小於1.7、1.68、1.66、1.65、1.63、1.60、1.55或1.52以下之折射率之一層。在此,該低折射有機層之
該折射率之下限可為例如0.5或0.7以上,但不限於此。
在一實施例中,該低折射有機層之形成,可\與作為一反射電極層之一電子或一電洞注入電極層接觸或相鄰,舉例來說,形成作為一反射電極層之一電子注入電極層。在此位置所形成之該低折射有機層,可藉由與該散射層之有機反應以減少該反射電極層的之光吸收的影響,並藉由表面電漿使耦合漸漸消失,以增加該裝置之光萃取效率。
當與該低折射有機層接觸或相鄰之該電極為一電子注入電極層時,包含在該低折射有機層中之有機化合物可為電子接受有機化合物。可提供包含該電子接受有機化合物之該低折射有機層作為一電子注入層、一電子傳輸層、或電子注入/傳輸層。
作為一接受電子之有機化合物,可使用已知任意的化合物而無任何具體限制。作為此有機化合物,可使用:芳香胺化合物,如4,4’,4”-三(N-氮芴基)三苯基胺;多環化合物(polycyclic compound),如對三聯苯(p-terphenyl)、四聯苯(quaterphenyl)或其衍生物;多環烴化合物(polycyclic hydrocarbon compound),如萘(naphthalene)、稠四苯(tetracene)、芘(pyrene)、蔻(coronene)、苯并菲(chrysene)、蔥(anthracene)、二苯蒽(diphenylanthracene)、稠四苯(naphthacene)、或菲(phenanthrene)或其衍生物;或雜環化合物(heterocyclic compound),如啡啉(phenanthroline)、菲咯啉(bathophenanthroline)、啡啶(phenanthridine)、吖啶(acridine)、喹啉(quinoline)、奎喏林(quinoxaline)、或吩嗪(phenazine)或其
衍生物。此外,熒光素(fluoroceine)、苝(perylene)、酞苝(phthaloperylene)、萘苝(naphthaloperylene)、紫環酮(perynone)、酞菁紫環酮(phthaloperynone)、萘紫環酮(naphthaloperynone)、二苯基丁二烯(diphenylbutadiene)、四苯基丁二烯(tetraphenylbutadiene)、噁二唑(oxadiazole)、醛連氮(aldazine)、二苯并(bisbenzoxazoline)、聯苯乙烯(bisstyryl)、吡嗪(pyrazine)、環戊二烯(cyclopentadiene)、8-羥基喹啉(oxine)、氨基喹啉(aminoquinoline)、亞胺(imine)、二苯乙烯(diphenylethylene)、乙烯基蒽(vinylanthracene)、二氨基咔唑(diaminocarbazole)、吡喃(pyrane)、噻喃(thiopyrane)、聚甲炔(polymethine)、部花青素(merocyanine)、喹吖啶酮(quinacridone)、紅熒烯(rubrene)、或其衍生物;於日本專利公開號第1988-295695號、日本專利公開號第1996-22557號、日本專利公開號第1996-81472號、日本專利公開號第1993-009470號、或日本專利公開號第1993-017764號揭露之金屬螯合錯合物化合物,如具有至少一金屬螯合8-羥基喹啉化合物(metal chelated oxinoid compound)之金屬錯合物,例如:8-羥基喹啉化合物(8-quinolatos),包括三(8-羥基喹啉)鋁(tris(8-quinolinolato)aluminum)、雙(8-羥基喹啉)鎂(bis(8-quinolinolato)magnesium)、雙[苯并(f)-8-羥基喹啉]鋅(bis[benzo(f)-8-quinolinolato]zinc)、雙(2-甲基-8-羥基喹啉)鋁(bis(2-methyl-8-quinolinolato)aluminum)、三(8-羥基喹啉)銦(tris(8-quinolinolato)indium)、三(5-甲基-8-羥基喹啉)鋁(tris(5-methyl-8-quinolinolato)aluminum)、8-羥基喹啉鋰(8-quinolinolatolithium)、三(5-氯-8-羥基喹啉)鎵
(tris(5-chloro-8-quinolinolato)gallium)、雙(5-氯-8-羥基喹啉)鈣(bis(5-chloro-8-quinolinolato)calcium)、及其衍生物作為一協調物(coordinator);於日本專利公開號第1993-202011號、日本專利公開號第1995-179394號、日本專利公開號第1995-278124號或日本專利公開號第1995-228579號揭露之噁二唑(oxadiazole)化合物;於日本專利公開號第1995-157473號揭露之三嗪(triazine)化合物;於日本專利公開號第1994-203963號揭露之芪類(stilbene)衍生物;二苯乙烯基亞芳(distyrylarylene)衍生物;於日本專利公開號第1994-132080號或日本專利公開號第1994-88072揭露之苯乙烯基(styryl)衍生物;於日本專利公開號第1994-100857號或日本專利公開號第1994-207170揭露之二烯烴(diolefin)衍生物;螢光增亮劑,如苯并噁唑(benzooxazole)化合物、苯并噻唑(benzothiazole)化合物、或苯并咪唑(benzoimidazole)化合物;二苯乙烯基苯(distyrylbenzene)化合物,如1,4-雙(2-甲基苯乙烯基)苯(1,4-bis(2-methylstyryl)benzene)、1,4-雙(3-甲基苯乙烯基)苯(1,4-bis(3-methylstyryl)benzene)、1,4-雙(4-甲基苯乙烯基)苯(1,4-bis(4-methylstyryl)benzene)、二苯乙烯基苯(distyrylbenzene)、1,4-雙(2-乙基苯乙烯基)芐基(1,4-bis(2-ethylstyryl)benzyl)、1,4-雙(3-乙基苯乙烯基)苯(1,4-bis(3-ethylstyryl)benzene)、1,4-雙(2-甲基苯乙烯基)-2-甲基苯(1,4-bis(2-methylstyryl)-2-methylbenzene)、1,4-雙(2-甲基苯乙烯基)-2-乙基苯(1,4-bis(2-methylstyryl)-2-ethylbenzene);二苯乙烯基吡嗪(distyrylpyrazine)化合物,如2,5-雙(4-甲基苯
乙烯基)吡嗪(2,5-bis(4-methylstyryl)pyrazine)、2,5-雙(4-乙基苯乙烯基)吡嗪(2,5-bis(4-ethylstyryl)pyrazine)、2,5-雙[2-(1-萘基)乙烯基]吡嗪(2,5-bis[2-(1-naphthyl)vinyl]pyrazine)、2,5-雙[2-(4-聯苯基)乙烯基]吡嗪(2,5-bis(4-methoxystyryl)pyrazine)、或2,5-雙[2-(1-芘基)乙烯基]吡嗪(2,5-bis[2-(1-pyrenyl)vinyl]pyrazine);二亞甲基(dimethylidene)衍生物,如1,4-亞苯基二亞甲基(1,4-phenylenedimethylidene)、4,4'-亞苯基二亞甲基(4,4’-phenylenedimethylidene)、2,5-二甲苯二亞甲基(2,5-xylene dimethylidene)、2,6-亞萘基二亞甲基(2,6-naphthylenedimethylidene)、1,4-亞聯苯基二亞甲基(1,4-biphenylenedimethylidene)、1,4-對-四苯基二亞甲基(1,4-para-terephenylene dimethylidene)、9,10-蒽二基二甲基烷(9,10-anthracenediyldimethylidine)、或4,4'-(2,2-二-鈦-丁基苯基)聯苯(4,4’-(2,2-di-ti-butylphenylvinyl)biphenyl)、或4,4'-(2,2-二苯基乙烯基)聯苯基(4,4’-(2,2-diphenylvinyl)biphenyl),或其衍生物;於日本專利公開號第1994-49079號或日本專利公開號第1994-293778號揭露之矽烷胺(silanamine)衍生物;於日本專利公開號第1994-279322號或日本專利公開號第1994-279323號揭露多官能基之苯乙烯基化合物;於日本專利公開號第1994-107648號或日本專利公開號第1994-092947號揭露之多功能基之噁二唑衍生物;如日本專利公開號第1994-206865號揭露之蒽(anthracene)化合物;於日本專利公開號第1994-145146號揭露之喹啉(oxinate)衍生物;於日本專利公開號第1992-96990
號揭露之四苯基丁二烯(tetraphenyl butadiene)化合物;如日本專利公開號第1991-296595號公開之有機三官能基化合物;於日本專利公開號第1990-191694號揭露之香豆素(coumarin)衍生物;於日本專利公開號第1990-196885號揭露之苝(perylene)衍生物;於日本專利公開號第1990-255789號揭露之萘(naphthalene)衍生物;如日本專利公開號第1990-289676號或日本專利公開號第1990-88689號揭露之酞菁紫環酮(phthaloperynone)衍生物;或如日本專利公開號第1990-250292號揭露之苯乙烯基胺(styryl amine)衍生物可使用作為一包含於低反射層中的電子接受有機化合物。
該有機化合物通常可具有約1.7至1.8的折射率。為了維持包含此有機化合物之該低折射有機層較低的折射率,該低折射有機層可包含具有低折射率之材料(之後,稱為低折射材料)與該有機化合物。作為此低折射材料,例如,可使用具有1.60以下之折射率的材料。該低折射材料之折射率的下限可為例如但不限於0.5或0.7以上。作為該材料,可使用一或至少兩種之混合物選自氟化鋰(lithium fluoride(LiF))、氟化鎂(magnesium fluoride(MgF2))、氟化鉀(potassium fluoride(KF))、氟化鈉(sodium fluoride(NaF))、氟化鋁(aluminum fluoride(AlF2))、氟化鋇(barium fluoride(BaF2))、氟化鈹(beryllium fluoride(BeF2))、氟化鎘(cadmium fluoride(CdF2))、氟化鈣(calcium fluoride(CaF2))、氟化銫(cesium fluoride(CsF))、氟化釷(vanadium fluoride(V2O5))及Na2Al3F1錐冰晶石(Chiolite)。
只要控制該低折射有機層至具有上述範圍的折射率,包含於該低折射有機層之低折射材料的含量沒有特別地限制。在一具體實施例中,包含於該低折射有機層中之有機化合物係以100重量份為計,所包含之該低折射材料之含量為150、140、130、120、110或100重量份。在此使用的「重量份」單位除非另有定義,其可指成分之間的重量比。藉由該低折射有機層之折射率來測量該低折射材料含量比的下限,因此沒有特別地限制。
藉由例如使用有機化合物及低折射材料之共沉積方法(codeposition method),可形成包括該有機化合物及如上所述之該低折射材料的低折射有機層。
該低折射有機材料可具有,例如,15、18、20、30、40、50、55、60、65或70nm以上之厚度。在此範圍中,使該裝置的衰退效果降至最小且可最佳化光萃取效率。該低折射有機層的厚度之下限沒有特別地限制。例如,該低折射有機層可具有150、100或85nm以下的厚度。
該發光層可使用在本技術領域中習知的各種如螢光或磷光有機材料而形成。該發光層可藉由使用如上所述之該電子接受有機化合物、或選自下述的電子提供有機化合物之顯示發光特性之適當的一個來形成該發光層。
用於該發光層之材料可為,但不限於:一螢光材料,如Alq系材料(例如:三(4-甲基-8-羥基喹啉)鋁(III)(tris(4-methyl-8-quinolinolate)aluminum(III),Alg3)、4-MAlq3、或Gaq3);一環戊二烯(cyclopentadiene)衍生物,如
C-545T(C26H26N2O2S)、DSA-amine、TBSA、BTP、PAP-NPA、spiro-FPA、Ph3Si(PhTDAOXD)、1,2,3,4,5-五苯基-1,3-環戊二烯(1,2,3,4,5-pentaphenyl-1,3-cyclopentadiene,PPCP);4,4'-雙(2,2'-二苯基乙烯基)-1,1'-聯苯(4,4’-bis(2,2’-diphenylvinyl)-1,1’-biphenyl,DPVBi)、二苯乙烯基苯(distyryl benzene)或其衍生物;或者4-(二氰基亞甲基)-2-第三丁基-6-(1,1,7,7,-四甲基久若尼定-9-烯基)-4H-吡喃(4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7,-tetramethyljulolidyl-9-enyl)-4H-pyran,DCJTB)、DDP、AAAP、或NPAMLI;一磷發光材料(phosphorescent material),如Firpic、m-Firpic、N-Firpic、bon2Ir(acac)、(C6)2Ir(acac)、bt2Ir(acac)、dp2Ir(acac)、bzq2Ir(acac)、bo2Ir(acac)、F2Ir(bpy)、F2Ir(acac)、op2Ir(acac)、ppy2Ir(acac)、tpy2Ir(acac)、三[2-(4,5'-二氟苯基)吡-C’2,N)銥(III)(fac-tris[2-(4,5’-difluorophenyl)pyridine-C’2,N]iridium(III),FIrppy)、或雙(2-(2'-苯并咪唑并[4,5-a]噻吩基)吡啶-N,C3']銥(乙醯丙酮)(bis(2-(2’-benzo[4,5-a]thienyl)pyridinato-N,C3’)iridium(acetylactonate,Btp2Ir(acac))。該發光層可包括作為主發光體之材料及包含主體摻雜劑系統,其包括作為摻雜劑之苝(perylene)、二苯乙烯基聯苯(distyrylbiphenyl)、DPT、喹吖啶酮(quinacridone)、紅熒烯(rubrene)、BTX、ABTX、或DCJTB。
只要該有機堆疊結構至少有包含該低折射率有機層及該發光層,該有機堆疊結構可以包含在本領域中已知
以各種形式存在之其它層。
例如,當該低有機層包含一電子接受有機化合物時,從而可做為一電子傳輸層、作為更包含於該有機堆疊結構中的一層、一電洞注入層(HIL)、一電洞傳輸層(HTL)、一電子注入層(EL)或一電洞阻斷層(HBL)。
在此,該電洞注入層可作為額外包含之一層,係與該電洞注入電極層接觸以協助將電洞自該電極層順利地注入該有機堆疊結構中。此外,例如,在發光層與該電洞注入電極層之間可存在該電洞傳輸層,並具有比發光層更高的最高填滿軌域(highest occupied molecular orbital(HOMO)),從而,協助將電洞順利地傳送。
舉例而言,該電洞注入層或電洞傳輸層可包括一電子給予有機化合物。作為該電子給予有機化合物,可使用N,N',N'-四苯基-4,4'-二氨基苯基(N,N’,N’-tetraphenyl-4,4’-diaminophenyl)、N,N'-二苯基-N,N'-二(3-甲基苯基)-4,4'-二氨基聯苯(N,N’-diphenyl-N,N’-di(3-methylphenyl)-4,4’-diaminobiphenyl)、2,2-雙(4-二-對-甲苯基氨基苯基)丙烷(2,2-bis(4-di-p-tollylaminophenyl)propane)、N,N,N',N'四-對-甲苯基-4,4'-二氨基聯苯(N,N,N’,N’-tetra-p-tollyl-4,4’-diaminobiphenyl)、雙(4-二-對-甲苯基氨基苯基)苯基甲烷(bis(4-di-p-tollylaminophenyl)phenylmethane)、N,N'-二苯基-N,N'-二(4-甲氧基苯基)-4,4'-二氨基聯苯
(N,N’-diphenyl-N,N’-di(4-methoxyphenyl)-4,4’-diaminobiphenyl)、N,N,N',N'-四苯基-4,4'-二氨基二苯醚(N,N,N’,N’-tetraphenyl-4,4’-diaminodiphenylether)、4,4'-雙(二苯基氨基)四苯基(4,4’-bis(diphenylamino)quadriphenyl)、4-N,N-二苯基氨基-(2-二苯基乙烯基)苯(4-N,N-diphenylamino-(2-diphenylvinyl)benzene)、3-甲氧基-4'-N,N-二苯基氨基苯乙烯基苯(3-methoxy-4’-N,N-diphenylaminostyrylbenzene)、N-苯基咔唑(N-phenylcarbazole)、1,1-雙(4-二-對-三氨基苯基)環己烷(1,1-bis(4-di-p-triaminophenyl)cyclohexane)、1,1-雙(4-二-對-三氨基苯基)-4-苯基環己烷(1,1-bis(4-di-p-triaminophenyl)-4-phenylcyclohexane)、雙(4-二甲基氨基-2-甲基苯基)苯基甲烷(bis(4-dimethylamino-2-methylphenyl)phenylmethane)、N,N,N-三(對-甲苯基)胺(N,N,N-tri(p-tollyl)amine)、4-(二-對-甲苯基氨基)-4'-[4-(二-對-甲苯基氨基)苯乙烯基]二苯乙烯(4-(di-p-tollylamino)-4’-[4-(di-p-tollylamino)styryl]stilbene)、N,N,N',N'-四苯基-4,4'-二氨基聯苯(N-苯基咔唑N,N,N’,N’-tetraphenyl-4,4’-diaminobiphenyl N-phenylcarbazole)、4,4'-雙[N-(1-萘基)-N-苯基-氨基]聯苯(4,4’-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl)、4,4“-雙[N-(1-萘基)-N-苯基氨基]對-三聯苯(4,4”-bis[N-(1-naphthyl)-N-phenylamino]p-terphenyl)、4,4'-
雙[N-(2-萘基)-N-苯基氨基]聯苯(4,4’-bis[N-(2-naphthyl)-N-phenylamino]biphenyl)、4,4'-雙[N-(3-苊基)-N-苯基氨基]聯苯(4,4’-bis[N-(3-acenaphthenyl)-N-phenylamino]biphenyl)、1,5-雙[N-(1-萘基)-N-苯基氨基]萘(1,5-bis[N-(1-naphthyl)-N-phenylamino]naphthalene)、4,4'-雙[N-(9-蒽基)-N-苯基氨基]聯苯苯基氨基]聯苯(4,4’-bis[N-(9-anthryl)-N-phenylamino]biphenylphenylamino]biphenyl)、4,4'-雙[N-(1-蒽基)-N-苯基氨基]對三聯苯(4,4’-bis[N-(1-anthryl)-N-phenylamino]-p-terphenyl)、4,4'-雙[N-(2-菲基)-N-苯基氨基]聯苯(4,4’-bis[N-(2-phenanthryl)-N-phenylamino]biphenyl)、4,4'-雙[N-(8-熒蒽基)-N-苯基氨基]聯苯(4,4’-bis[N-(8-fluoranthenyl)-N-phenylamino]biphenyl)、4,4'-雙[N-(2-芘基)-N-苯基氨基]聯苯(4,4’-bis[N-(2-pyrenyl)-N-phenylamino]biphenyl)、4,4'-雙[N-(2-苝基)-N-苯基氨基]聯苯(4,4’-bis[N-(2-perylenyl)-N-phenylamino]biphenyl)、4,4'-雙[N-(1-暈苯基)-N-苯基氨基]聯苯(4,4’-bis[N-(1-coronenyl)-N-phenylamino]biphenyl)、2,6-雙(二-對-甲苯基氨基)萘(2,6-bis(di-p-tollylamino)naphthalene)、2,6-雙[二-(1-萘基)氨基]萘(2,6-bis[di-(1-naphthyl)amino]naphthalene)、2,6-雙[N-(1-萘基)-N-(2-萘基)氨基]萘
(2,6-bis[N-(1-naphthyl)-N-(2-naphthyl)amino]naphthalene)、4,4'-雙[N,N-二(2-萘基)氨基]三聯苯(4,4’-bis[N,N-di(2-naphthyl)amino]terphenyl)、4,4'-雙{N-苯基-N-〔4-(1-萘基)苯基]氨基}聯苯(4,4’-bis{N-phenyl-N-[4-(1-naphthyl)phenyl]amino}biphenyl)、4,4'-雙[N-苯基-N-(2-芘基)氨基]聯苯(4,4’-bis[N-phenyl-N-(2-pyrenyl)amino]biphenyl)、2,6-雙[N,N-二-(2-萘基)氨基]氟(2,6-bis[N,N-di-(2-naphthyl)amino]fluorine)、或4,4'-雙(N,N-二-對-甲苯基氨基)三聯苯(4,4’-bis(N,N-di-p-tollylamino)terphenyl)、或芳胺類化合物,如雙(N-1-萘基)(N-2-萘基)胺(bis(N-1-naphthyl)(N-2-naphthyl)amine),但本發明並不僅限於此。
該電洞注入層或電洞傳輸層可透過分散該有機化合物於一聚合物中,或使用一由該有機化合物衍生之聚合物而形成。此外,可使用一π-共軛聚合物,如聚對苯乙炔(polyparaphenylenevinylene)及其衍生物、一電洞傳輸非共軛聚合物,如聚(N-乙烯基咔唑)(poly(N-vinylcarbazole))、或一矽烷之σ-共軛聚合物。
該電洞注入層可使用一導電聚合物形成,例如,金屬酞菁(metal phthalocyanine),如銅酞菁(copper phthalocyanine);非金屬酞菁(non-metal phthalocyanine);碳層;及聚苯胺(polyaniline)來形成,或該電洞注入層可藉由
使用一芳胺化合物作為氧化劑與路易士酸反應而形成。
該電子注入層可為用於協助將電子從該電極層注入該有機堆疊結構中之一層,且當需要時可更包含與該電子注入電極層接觸。使用已知材料如LiF或CsF可形成該電子注入層。該電洞阻斷層藉由避免電洞從該電洞注入電極層經由發光層注入至該電子注入電極層的接近,能夠增加該裝置的生命週期(life span)及效率之一層,且當需要時,使用已知的材料在發光層與該電子注入電極層之間可形成一適當的部分。
該有機堆疊結構可以各種結構形成。例如,當低折射有機層作為一電子傳輸層時,該有機堆疊結構可包括:從該電洞注入電極層依序形成一發光層及一低折射有機層;一發光層、一低折射有機層及一電子注入層;一電洞傳輸層、一發光層及一低折射有機層;一電洞注入層、一電洞傳輸層、一發光層及一低折射有機層;一電洞傳輸層、一發光層、一電洞阻斷層及一低折射有機層;一電洞注入層、一電洞傳輸層、一發光層、一電洞阻斷層及一低折射有機層;一電洞傳輸層、一發光層、一低折射有機層及一電子注入層;或一電子注入層、一電洞傳輸層、發光層、一低折射有機層及一電子注入層,但本發明不限於此。當需要時,該有機堆疊結構可具有包含至少兩層發光層之一結構。包含至少兩層發光層之該結構可包含藉由具有一電荷產生特性或一電荷產生層(charge generating layer(CGL))之一內電極層來分離之至少兩發光層,其中,該包含至少兩層發光層之該結構存在於該有
機堆疊結構之一適當的位置,但本發明不限制於此。
該OLED亦可包含一散射層。該散射層可為能夠經由與低折射有機層反應而增加該裝置之該光萃取效率之一層,且只要該等用以散射入射光,可使用已知材料及結構而形成該散射層。
在一具體實施例中,該散射層可為包含散射顆粒之一層。圖2顯示一說明性形狀,其中,在一基底層105上形成包含散射顆粒301之散射層。圖2之該散射層包含散射顆粒301及一黏著劑302。
在此使用的「散射顆粒」一詞可指,例如,具有與之後描述的用以形成在該散射層或平坦化層之黏著劑不相同之折射率之顆粒。該散射顆粒可具有約1.0至3.5的折射率,例如,約1.0至2.0、1.2至1.8、2.1至3.5、或2.2至3.0,且平均直徑約50至20,000nm、或100至5,000nm。該散射顆粒可為球形、橢圓形、多邊形、或不定形,但本發明不限於此。該散射顆粒可包括,例如:有機材料,如聚苯乙烯或其衍生物、丙烯酸樹脂或其衍生物、矽烷樹脂或其衍生物、或酚醛樹脂或其衍生物;或無機材料,如二氧化矽、氧化鋁、氧化鈦或氧化鋯。該散射顆粒可包括上述材料中任一種,或其至少兩種;或者視所需該散射顆粒可形核/殼型顆粒或中空型顆粒。
該散射層可更包含用於維持該散射顆粒之黏著劑。作為該黏著劑,作為能夠維持該散射顆粒之材料,可使用其他相近的材料,例如,具有與該基底層105相同折射率
之材料。作為黏著劑,例如,一熱或光可硬化單體的、寡聚物的、包含聚醯亞胺之聚合物有機材料、含有芴環(fluorene ring)之硝滷水樹脂(caldo resin)、尿素(urethane)、環氧化合物(epoxide)、聚酯(polyester)、或丙烯酸酯(acrylate);一無機材料,如二氧化矽(silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)、或聚矽烷(polysiloxane);或一有機/無機組合材料。
該散射層可例如為具有一不平坦結構之一層。圖3示例性顯示具有一不平坦結構之一散射層401形成在一基底層105上。當適當地控制該散射層之不平坦結構時,可散射入射光。
具有不平坦結構之散射層之形成,可例如藉由塗佈一熱或光可硬化材料,且在硬化或進行一蝕刻步驟期間,與能夠傳送該不平坦結構之期望的外型之模組接觸來硬化該材料。在另一方法中,藉由在用於形成該散射層之黏著劑,將具有一適當的大小及外形之顆粒混合可形成該散射層。在此情況下,該顆粒不需要為具有一散射功能之顆粒,但亦可使用具有散射功能之顆粒。
舉例來說,該散射層可藉由濕式塗佈法塗佈一材料並進行施加熱或光的輻射,再藉由溶膠-凝膠(sol-gel coating)方法、如化學氣相沉積(chemical vapor deposition,CVD)或物理氣相沉積(physical vapor deposition,PVD)之沉積方法、或微壓花(microembossing)法硬化該材料。
該OLED可更包含形成在該散射層頂部的一平
坦化層。圖4及5示例性顯示更包含一平坦化層之OLED。圖4顯示平坦化層501係形成在具有顯示於圖2中之該結構的該散射層上,以及圖5顯示平坦化層501係形成在具有顯示於圖3結構的該散射層上。
該平坦化層提供如電洞注入電極層之電極層可形成於該散射層上之一表面,在相同情況下,經由與該散射層反應,可實現更優異光萃取效率。該平坦化層可例如具有作為相鄰電極層之相同折射率,例如,約1.8至3.5或2.2至3.0。
該平坦化層可藉由,例如,將具有高折射率及約1至100、10至90、20至80、30至70、30至60或30至50nm平均直徑之高折射顆粒與用於形成該平坦化層之黏著劑混合。作為該高折射顆粒,可使用,例如,氧化鋁、氧化鈦或氧化鋯。在一具體實施例中,作為高折射顆粒,可使用氧化鈦,例如,金紅石(rutile-type)型氧化鈦。該金紅石氧化鈦可具有比其它顆粒更高的折射率,因此,即使在用於形成該平坦化層的材料之高折射顆粒的含量係相當小,該平坦化層可具有高折射率。當該高折射顆粒的比率在材料中相當低時,可實現具有較高品質之該平坦化層。
在另一實施例中,可藉由將如金屬(如鋯、鈦或鈰)的烷氧化物或丙烯酸酯的化合物與具有如羧基或羥基之極性基之黏著劑混合以製備一材料而可形成該平坦化層。如烷氧化物或丙烯酸酯之化合物可與黏著劑之極性基縮合,並提供該金屬至該黏著劑骨架,從而實現高折射率。烷氧化物
或丙烯酸酯化合物之實施例可包含鈦金屬烷氧化物(titanium alkoxide),如,四-正-丁氧基鈦(tetra-n-butoxy titanium)、四異丙氧基鈦(tetraisopropoxy titanium)、四-正丙氧基鈦(tetra-n-propoxy titanium)或四乙氧基鈦(tetraethoxy titanium)、如四正丁氧基鋯(tetra-n-butoxy zirconium)、四-正丙氧基鋯(tetra-n-propoxy zirconium)、四異丙氧基鋯(tetraisopropoxy zirconium)、或四乙氧基鋯(tetraethoxy zirconium)之鈦丙烯酸酯(titanium acylate)、如三丁氧基硬脂酸酯鋯(zirconium tributoxystearate)或鋯螯合物(zirconium chelate)之丙烯酸鋯。此外,作為具有極性基的黏著劑,可使用選自描述於散射層的種類之黏著劑中之適當的一個。
此外,該平坦化層可藉由將金屬烷氧化物(如鈦金屬烷氧化物或鋯金屬烷氧化物)與溶劑(如醇或水)混合而製備塗佈溶液;塗佈該塗佈溶液;以及在適當的溫度藉由溶膠-凝膠(sol-gel coating)塗佈塑化該塗佈溶液而形成。
該散射層或該平坦化層可具有比形成其上的該電洞或電子注入電極層更小的投射面積。該散射層或該散射層及平坦化層亦可具有比該基底層更小的投影面積。在此使用之「投影面積」一詞係指當從上或下平行於該基板之一面之法線之方向觀察該基板時,一被確認之一目標物之投影面積,例如,一基底層、散射層、或電極層之面積。據此,舉例而言,當透過從上觀察該高折射率層或該散射層所確認之面積小於透過從上觀察該電極層所確認之面積時,即便因該高折射率層或該散射層形成為一不平坦的形狀,
其實質的表面積大於該電極層之表面積,應理解為該高折射率層或散射層具有一小於該電極層投影面積之投影面積。
當該散射層具有比該基底層及該電極層小的投影面積時,該散射層可以各種形式存在。例如,如圖6所示,僅能在該基底層105的邊緣之外的部位上可形成該散射層104,或如圖7所示,該散射層104可部分地維持該基底層105的邊緣。
圖8係示例性顯示從上觀察圖6之該散射層。如圖8所示,當從上觀察該散射層時,一面積(A),即,該經確認之電子或電洞注入電極層101之投影面積(A)大於設置於其下之散射層104之投影面積(B)。該電極層101之投影面積(A)及散射層的面積(B)之比值(A/B)可為,例如,1.04以上、1.06以上、1.08以上、1.1以上或1.15以上。當該散射層之投影面積小於該電極層之投影面積時,由於如下所述可實現該散射層不暴露於外部環境之結構,因此該投影面積之比值(A/B)之上限並沒有特別地限制。在考量一般基板之製造環境下,該比值(A/B)之上限可為,例如,約2.0、1.5、1.4、1.3、或1.25。在此,在其上不形成散射層之該基底層上,可形成該電子注入或電洞注入電極層。該電極層可以接觸該基底層而形成,或一額外元件可更包含於該電極層及該基底層之間。依據這樣的結構,可實現該散射層不暴露於一外部環境中之一結構。
例如,如圖8所示,該電子注入或電洞注入電
極層可形成於一區域中,該區域包括當從上觀察時散射率層全部周邊區域以外的區域。在此情況下,例如,如圖7所示,當複數層散射層104存在於該基底層上時,該電極層101可形成於該包含至少一散射層之全部周邊區域以外的區域之區域,如,該散射層上將至少形成一有機層。例如,在圖7的結構中,當該有機層形成在存在於該右及左邊緣之該散射層的頂部上時,藉由延伸左側或右側,可改變圖7的結構以形成電極層直到存在於該右及左邊緣之散射層之全部周邊區域以外的區域之區域。在此結構中,當描述於下文之裝結構(encapsulating structure)黏附至沒有形成該散射層之該電極層下,可形成該散射層未暴露至一外部環境之結構。據此,可防止外部濕氣或氧氣穿透該高折射率層及其類似物之滲入,可穩定地確保該封裝結構或該電極與該基板間之黏著強度,且可優異地保持該裝置邊緣之表面硬度。
在用於形成該電極層之沉積或濺射步驟期間,藉由,例如,形成該電極層以具有比該散射層大的投射面積,可進行該投射面積的控制,且當需要時,藉由移除該散射層及/或平面化層的預定部分以圖案化。
該OLED可存在於一適當的封裝結構中以避免從外部環境的濕氣或氧氣。即,該OLED可更包含用於保護該電極層及該有機堆疊結構之一封裝結構。該封裝結構可為,例如,一罐型,如玻璃罐或金屬罐;或一覆蓋該有機堆疊結構整個表面之膜。
圖9示例性顯示如玻璃罐或金屬罐之罐型封裝
結構901更包含作為用於投射依序形成的一電子注入電極層102與一有機堆疊結構103之一封裝結構901。如圖9所示,該封裝結構901可為,例如,藉由一黏附劑(adhesive)902黏附至一電洞注入層101。該封裝結構可為,例如,黏附至沒有散射層104存在之該電洞注入電極層101下。例如,如圖9所示,藉由黏附劑902,該封裝結構901可黏附至存在於基底層之105之邊緣的該電極層101。在此方法中,可最佳化藉由封裝結構之保護效果。
該封裝結構可例如為塗佈有機堆疊結構與電子注入電極層全部表面之一薄膜。圖10顯示覆蓋有機堆疊結構103及電子注入電極層的全部表面之示例性薄膜型封裝結構1001。舉例來說,如圖10所示之該薄膜型封裝結構1001,可具有塗佈該有機堆疊結構103與該電極層102全部表面之結構,並黏附至具有散射層104與電洞注入電極層101之基底層105的頂部上之第二基板1002。在此,第二基板1002可使用如玻璃基板、金屬基板、聚合物薄膜或阻障層。舉例來說,藉由塗佈經熱或紫外線輻射硬化的一液體材料,例如,環氧樹脂,並硬化該液體材料,或使用預先製造的黏著片將該機板與上基板層疊,其中該黏著片係使用環氧樹脂製成薄膜型,可形成該薄膜型封裝結構。
當需要時,該封裝結構可包括一水分吸附劑(water adsorbent)或一吸氣劑(getter),例如,如氧化鈣或氧化鈹的金屬氧化物、如氯化鈣之金屬鹵化物,或五氧化二磷。例如,該水分吸附劑或該吸氣劑被包括於一薄膜型的
封裝結構中,或存在於一罐型的封裝結構中的預定位置。該封裝結構可更包括一阻障薄膜或導電薄膜。
如顯示於圖9或10,該封裝結構可黏附至,例如,沒有形成散射層之該電洞注入電極層101下之頂部。因此,在一密封結構中,可使該散射層等不暴露於外部環境。該密封結構可指,例如,在其中該散射層的整個表面由該基底層、該電極層及/或該封裝結構所圍繞、或由形成以包括該基底層、該電極層及/或該封裝結構之密封結構所圍繞,藉此防止該散射層未暴露於外部環境。該密封結構可僅包括該基底層、該電極層及/或該封裝結構,或包括該基底層、該電極層,以及該封裝結構,或亦可包括另一組件,例如,一導電材料或一中間層,只要該散射層不會暴露於外部環境即可。例如,在圖9或10中,其它組件可存在於該基底層105與該電極層101接觸之該基底層105或與該封裝結構901或1001接觸之該電極層101之部位或其他位置。作為其它成分,可使用有機、無機或具有低滲水性(water permeability)的有機/無機組合材料、一絕緣層、或一輔助電極。
本發明的另一態樣提供OLED的用途。該OLED可有效地應用於液晶顯示器(liquid crystal display,LCD)的背光、照明裝置、感測器、印表機、影印機之光源、汽車儀表之光源、信號光、指示燈、顯示裝置、用於平面發光裝置之光源、顯示器、裝飾或其他種類的光源。於一實施例中,本發明係關於一包括OLED之照明裝置。當該OLED應用於該照明裝置或用於其他用途時,其他組成該裝置之元件及組成
該裝置之方法沒有受特別限制,而該相關技術領域中習知之所有選擇性材料或方法皆可拿來使用,只要它們是用於OLED即可。
本發明的示例性OLED可將反射電極層的光吸收減到最小,並藉由表面電漿子使耦合漸漸消失,並顯示優異的發光效率。
100、200‧‧‧有機發光裝置
101、102‧‧‧電極層
103‧‧‧有機層疊結構
1031‧‧‧低折射有基層
1032‧‧‧發光層
105‧‧‧基底層
301‧‧‧散射顆粒
302‧‧‧黏著劑
104、401‧‧‧散射層
501‧‧‧平坦化層
圖1顯示該OLED說明性實施例的示意圖。
圖2及3顯示該散射層的說明性實施例的示意圖。
圖4及5顯示包含該平坦化層之OLED的說明性實施例的示意圖。
圖6至8係顯示在OLED中該基底層、該散射層及電洞注入電極層的說明性實施例的示意圖。
圖9及10係顯示OLED的說明性實施例的示意圖。
將參照實施例與比較例來詳細描述OLED,但OLED的範圍並不限於以下實施例。
實施例1
在10克的四甲烷基矽烷(tetramethoxy silane)中,藉由充分地分散1克的聚合物珠(XX75BO、平均直徑:約3μm、Sekisui)來製備溶膠-凝膠溶液。之後,藉由在玻璃基板上塗佈已製備的塗佈溶液並進行溶膠-凝膠反應來形成一散射層。接著,藉由塗佈高折射塗佈溶液、以及以如上述相同
的方法進行溶膠-凝膠反應,以形成具有約1.8的折射率之平坦化層,其中,該高折射塗佈溶液的製備係藉由在該散射層頂部以如上所述的相同方法,在包含四甲烷基矽烷溶膠-凝膠塗佈溶液中,將具有約10nm的平均直徑與約2.5的折射率之高折射氧化鋰顆粒混合而獲得。之後,藉由照射一雷射至所形成的層上以移除部分的該光散射層及該平坦化層,使得相當於依序形成的有機層的發光區域之剩餘的光散射層與該平坦化層的位置。移除之後,藉由已知的濺射方法,在該玻璃基板的全部表面上形成包含ITO的電洞注入電極層以具有預定的厚度。接著,藉由已知的沉積方法,依序形成包含N,N’-二[(1-萘基)-N,N’-二苯基]-1,1’-二苯基)-4,4’-二胺(N,N’-Di-[(1-naphthyl)-N,N’-diphenyl]-1,1’-biphenyl)-4,4’-diamine(α-NPD))之電洞注入層及發光層(4,4’,4”-三(N-咔唑基)-三苯胺(4,4’,4”-tris(N-carbazolyl)-triphenylamine(TCTA)):Firpic、TCTA:Fir6)。接著,在發光層頂部,藉由將電子傳輸化合物(4,4’,4”-三(N-咔唑基)-三苯胺(TCTA))及低折射材質(LiF(折射率:約1.39))共沉積,形成約70nm厚度之低折射有機層,並具有約1.66的全部層之折射率。之後,藉由真空沉積方法,在低折射有機層的頂部,藉由形成作為電極注入反射電極之鋁(Al)電極來製造一裝置。之後,於氬氣環境下,在手套箱(glove box)中,藉由黏附封裝結構至該裝置以製造一系統。之後,在空氣中開始該系統,且當從半月形(Half Moon)電流密度為3mAcm-2時,測量電壓-電流特性、發光及
效率。同時,在此,折射率為使用由Nanoview所製造的橢圓偏光儀,在約550nm的波長所測量的一值。
比較例1
除了在發光層上形成僅電子傳輸化合物(TCTA)的一層以具有約70nm的厚度來代替低折射有機層之外,其他係如實施例1所述之方法來製造OLED。
比較例2
除了未形成散射層與平坦化層之外,其他係如實施例1所述之方法來製造OLED。
比較例3
除了不形成散射層與平坦化層,且在發光層上僅形成電子傳輸化合物(TCTA)的一層以具有約70nm的厚度來代替低折射有機層之外,其他係如實施例1所述之方法來製造OLED。
比較例4
除了在發光層上形成電子傳輸化合物(TCTA)及具有約1.79的折射率的氧化釔(yttrium oxide(Y2O3))之共沉積層以具有約70nm的厚度來代替低折射有機層之外,其他係如實施例1所述之方法來製造OLED。
比較例5
除了在發光層上形成電子傳輸化合物(TCTA)以具有約20nm的厚度來代替低折射有機層之外,其他係如實施例1所述之方法來製造OLED。
於表1中顯示關於實施例與比較例的性能評估
結果。在表1中,藉由已知方法,進行絕對量子效率(absolute quantum efficiency)之評估。
100‧‧‧有機發光裝置
101‧‧‧電極層
102‧‧‧電極層
103‧‧‧有機層疊結構
104‧‧‧散射層
105‧‧‧基底層
1031‧‧‧低折射有機層
1032‧‧‧發光層
Claims (20)
- 一種有機發光裝置,包括:一電子注入電極層以及一電洞注入電極層;一有機堆疊結構,其係於該電子注入電極層與該電洞注入電極層之間,且其包括一發光層及折射率為1.7以下之一低折射有機層;以及一散射層,其與相對於相鄰該電洞注入電極或該電子注入電極之該有機堆疊層之一側接觸或相鄰。
- 如申請專利範圍第1項所述之有機發光裝置,更包括:一基底層,在其上依序形成該電洞注入電極層、該有機堆疊結構及該電子注入層。
- 如申請專利範圍第2項所述之有機發光裝置,其中,該散射層係在該電洞注入電極層與該基底層之間。
- 如申請專利範圍第2項所述之有機發光裝置,其中,該電洞注入電極層為一透明電極層,且該電子注入電極層為一反射電極層。
- 如申請專利範圍第2項所述之有機發光裝置,其中,該低折射有機層包括一電子接受有機化合物。
- 如申請專利範圍第5項所述之有機發光裝置,其中,該低折射有機層係與該電子注入電極層接觸。
- 如申請專利範圍第1項所述之有機發光裝置,其中,該低折射有機層包括折射率為1.66以下之一低折射材料。
- 如申請專利範圍第7項所述之有機發光裝置,其中,該低折射材料為氟化鋰(lithium fluoride(IiF))、氟化鎂(magnesium fluoride(MgF2))、氟化鉀(potassium fluoride(KF))、氟化鈉(sodium fluoride(NaF))、氟化鋁(aluminum fluoride(AlF2))、氟化鋇(barium fluoride(BaF2))、氟化鈹(beryllium fluoride(BeF2))、氟化鎘(cadmium fluoride(CdF2))、氟化鈣(calcium fluoride(CaF2))、氟化銫(cesium fluoride(CsF))、氟化釷(thorium fluoride(ThF4))、氟化釔(yttrium fluoride(YF3))、氟化鐵(iron fluoride(FeCl2))、氟化釩(vanadium fluoride(V2O5))及Na2Al3F1錐冰晶石(Chiolite)。
- 如申請專利範圍第7項所述之有機發光裝置,其中,該低折射有機層包括5至200%的低折射材料。
- 如申請專利範圍第1項所述之有機發光裝置,其中,該低折射有機層具有15nm以上的厚度。
- 如申請專利範圍第1項所述之有機發光裝置,其中,該散射層包括散射顆粒,其折射率係在1.0至3.5的範圍且平均直徑係在50nm至20,000nm的範圍。
- 如申請專利範圍第1項所述之有機發光裝置,其中,該散射層包括一不平坦的結構。
- 如申請專利範圍第1項所述之有機發光裝置,更包括一平坦化層於該散射層上。
- 如申請專利範圍第13項所述之有機發光裝置,其中,該平坦化層具有1.8至3.5的折射率。
- 如申請專利範圍第13項所述之有機發光裝置,其中,該平坦化層包括高折射顆粒,其平均直徑係在1nm至100nm的範圍。
- 如申請專利範圍第15項所述之有機發光裝置,其中,該高折射顆粒為金紅石氧化鈦。
- 如申請專利範圍第3項所述之有機發光裝置,其中,該散射層具有比該電洞注入電極層小的投射面積,且在該散射層與沒有形成該散射層的該基底層之兩者上,形成該電洞注入電極層。
- 如申請專利範圍第17項所述之有機發光裝置,更包括:一封裝結構,其用於保護該有機堆疊結構及該電子注入電極層,且該封裝結構係黏附在沒有形成該散射層的該電洞注入電極層下。
- 如申請專利範圍第18項所述之有機發光裝置,其中,該封裝結構為一玻璃罐或一金屬罐、或一薄膜,該薄膜覆蓋該有機堆疊與該電子注入電極層的全表面。
- 一種照明設備,包括如申請專利範圍第1項所述之有機發光裝置。
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Family
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Family Applications (1)
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TW102110608A TWI542064B (zh) | 2012-03-23 | 2013-03-25 | 有機發光裝置 |
Country Status (7)
Country | Link |
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US (1) | US9577224B2 (zh) |
EP (1) | EP2830112A4 (zh) |
JP (1) | JP6448530B2 (zh) |
KR (3) | KR20130108026A (zh) |
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WO (1) | WO2013141674A1 (zh) |
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Also Published As
Publication number | Publication date |
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CN104303328B (zh) | 2017-07-11 |
EP2830112A1 (en) | 2015-01-28 |
US20150008422A1 (en) | 2015-01-08 |
TWI542064B (zh) | 2016-07-11 |
JP2015514293A (ja) | 2015-05-18 |
US9577224B2 (en) | 2017-02-21 |
EP2830112A4 (en) | 2015-10-28 |
CN104303328A (zh) | 2015-01-21 |
KR101784804B1 (ko) | 2017-10-12 |
KR20160134602A (ko) | 2016-11-23 |
JP6448530B2 (ja) | 2019-01-09 |
KR20130108207A (ko) | 2013-10-02 |
WO2013141674A1 (ko) | 2013-09-26 |
KR20130108026A (ko) | 2013-10-02 |
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