TW201343872A - Circuit connection material and method for producing mounted product using same - Google Patents
Circuit connection material and method for producing mounted product using same Download PDFInfo
- Publication number
- TW201343872A TW201343872A TW102107556A TW102107556A TW201343872A TW 201343872 A TW201343872 A TW 201343872A TW 102107556 A TW102107556 A TW 102107556A TW 102107556 A TW102107556 A TW 102107556A TW 201343872 A TW201343872 A TW 201343872A
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- coupling agent
- adhesive
- mass
- parts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
- C08K5/52—Phosphorus bound to oxygen only
- C08K5/521—Esters of phosphoric acids, e.g. of H3PO4
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29464—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
- Adhesive Tapes (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
本發明係關於一種分散有導電性粒子之電路連接材料、及使用其之構裝體之製造方法。本申請案係基於2012年3月12日於日本提出申請之日本專利申請案編號之日本專利特願2012-054831且主張其優先權者,該申請案係藉由參照而引用於本申請案中。 The present invention relates to a circuit connecting material in which conductive particles are dispersed, and a method of manufacturing a package using the same. The present application is based on Japanese Patent Application No. 2012-054831, the entire disclosure of which is hereby incorporated herein in .
先前,異向性導電膜(ACF,Anisotrcpic Conductive Film)被用於將半導體等零件安裝於印刷基板。例如於LCD(Liquid Crystal Display)面板之製造中,用於將控制像素之驅動IC(積體電路)接合於玻璃基板之所謂玻璃覆晶技術(COG,Chip-On-Glass)等。 Previously, an anisotropic conductive film (ACF) was used to mount components such as semiconductors on a printed substrate. For example, in the manufacture of an LCD (Liquid Crystal Display) panel, a so-called glass chip-on-glass (COG, Chip-On-Glass) for bonding a driving IC (integrated circuit) for controlling pixels to a glass substrate is used.
又,近年來,液晶面板中,於連接面形成有IZO(Indium Zinc Oxide)、ITO(Indium Tin Oxide)等穿透度較高之透明導電膜,且於配線之周圍表面形成有SiNx等透明絕緣膜者不斷普及。 In addition, in the liquid crystal panel, a transparent conductive film having a high transmittance such as IZO (Indium Zinc Oxide) or ITO (Indium Tin Oxide) is formed on the connection surface, and a transparent surface such as SiN x is formed on the peripheral surface of the wiring. Insulating films are becoming more and more popular.
對此種液晶面板進行異向性導電連接之情形時,可使用調配有磷酸酯化合物以提高與金屬配線即透明導電膜的密接性,並且調配有矽烷偶合劑以提高與無機物之透明絕緣膜的密接性之異向性導電膜(例如,參照專利文獻1、2)。 When the liquid crystal panel is subjected to an anisotropic conductive connection, a phosphate compound may be used to improve the adhesion to the metal wiring, that is, the transparent conductive film, and a decane coupling agent may be formulated to improve the transparent insulating film with the inorganic material. An anisotropic conductive film having an adhesive property (for example, refer to Patent Documents 1 and 2).
然而,若如專利文獻1、2之技術般同時調配磷酸酯化合物 與矽烷偶合劑,則於保管期間磷酸酯作為酸觸媒而發揮作用,使矽烷偶合劑水解,導致壓接時對透明絕緣膜之密接性下降。 However, if the phosphate compound is simultaneously formulated as in the techniques of Patent Documents 1 and 2. In the case of the decane coupling agent, the phosphate ester acts as an acid catalyst during storage, and the decane coupling agent is hydrolyzed, resulting in a decrease in adhesion to the transparent insulating film at the time of pressure bonding.
[專利文獻1]日本特開2004-43603號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-43603
[專利文獻2]日本特開2009-277769號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-277769
本發明係鑒於上述先前之實際情況而提出者,本發明提供一種具有優異之儲存穩定性的電路連接材料、及使用其之構裝體之製造方法。 The present invention has been made in view of the above-described actual circumstances, and provides a circuit connecting material having excellent storage stability and a method of manufacturing a package using the same.
本案發明者進行努力研究,結果發現藉由將磷酸酯化合物與矽烷偶合劑分開調配於雙層結構之電路連接材料的各層,可改善儲存穩定性。 As a result of intensive studies, the inventors of the present invention found that storage stability can be improved by separately disposing a phosphate compound and a decane coupling agent in each layer of a circuit connecting material having a two-layer structure.
即,本發明之電路連接材料之特徵在於具有:第1接著層,其含有矽烷偶合劑及導電性粒子;及第2接著層,其含有磷酸酯化合物。 That is, the circuit connecting material of the present invention is characterized by comprising: a first adhesive layer containing a decane coupling agent and conductive particles; and a second adhesive layer containing a phosphate compound.
又,本發明之構裝體之製造方法之特徵在於具有如下步驟:於第1電子零件之電極上,將具有第1接著層與第2接著層之異向性導電膜、以及第2電子零件以上述第1接著層位於上述第1電子零件上的方式依序配置之步驟,上述第1接著層含有矽烷偶合劑及導電性粒子,上述第2接著層含有磷酸酯化合物;及利用壓接頭自上述第2電子零件之上表面進行按壓之步驟。 Moreover, the method of manufacturing a package according to the present invention is characterized in that the anisotropic conductive film having the first adhesive layer and the second adhesive layer and the second electronic component are provided on the electrode of the first electronic component. a step of sequentially arranging the first adhesive layer on the first electronic component, wherein the first adhesive layer contains a decane coupling agent and conductive particles, and the second adhesive layer contains a phosphate compound; and The step of pressing the upper surface of the second electronic component.
本發明藉由將磷酸酯化合物與矽烷偶合劑分開調配於雙層結構之電路連接材料的各層,而可防止矽烷偶合劑水解,可獲得優異之儲存穩定性。又,因含有矽烷偶合劑之第1接著層中含有導電性粒子,故壓接時可提高與第1電子零件之密接性,進而可提高導電性粒子之粒子捕捉率。 The present invention can prevent the hydrolysis of the decane coupling agent by separately dispersing the phosphate compound and the decane coupling agent in the respective layers of the circuit connecting material of the two-layer structure, and can obtain excellent storage stability. Further, since the conductive particles are contained in the first adhesive layer containing the decane coupling agent, the adhesion to the first electronic component can be improved during pressure bonding, and the particle capturing ratio of the conductive particles can be improved.
10‧‧‧連接部 10‧‧‧Connecting Department
11‧‧‧透明導電膜 11‧‧‧Transparent conductive film
12‧‧‧透明絕緣膜 12‧‧‧Transparent insulating film
圖1係用以說明藉由矽烷偶合劑而提高對無機物之密接性的圖。 Fig. 1 is a view for explaining the improvement of the adhesion to an inorganic substance by a decane coupling agent.
圖2係表示液晶面板之連接部之一部分的平面圖。 Fig. 2 is a plan view showing a part of a connection portion of a liquid crystal panel.
以下,一面參照圖式一面對本發明之實施形態以下述順序詳細地進行說明。 Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings.
1.電路連接材料及其製造方法 1. Circuit connecting material and manufacturing method thereof
2.構裝體之製造方法 2. Manufacturing method of the package
3.實施例 3. Embodiment
圖1係用以說明藉由矽烷偶合劑而提高對無機物之密接性的圖。如圖1所示,矽烷偶合劑於一分子中具有有機官能基與水解基,壓接時與無機材料之羥基進行脫水縮合,藉此可提高與無機材料之密接性。 Fig. 1 is a view for explaining the improvement of the adhesion to an inorganic substance by a decane coupling agent. As shown in Fig. 1, the decane coupling agent has an organic functional group and a hydrolyzable group in one molecule, and is dehydrated and condensed with a hydroxyl group of an inorganic material at the time of pressure bonding, whereby adhesion to an inorganic material can be improved.
由於長期保管,該矽烷偶合劑藉由空氣中之水分進行水解而部分縮合從而生成低聚物,於壓接之前經基不斷減少導致密接力減小。又,於磷酸酯化合物等酸觸媒存在下,矽烷偶合劑之水解受到促進。 Due to long-term storage, the decane coupling agent is partially condensed by hydrolysis of moisture in the air to form an oligomer, and the base is continuously reduced before crimping, resulting in a decrease in the adhesion. Further, in the presence of an acid catalyst such as a phosphate compound, hydrolysis of the decane coupling agent is promoted.
針對於此,本實施形態之電路連接材料具有含有矽烷偶合劑及導電性粒子之第1接著層、與含有磷酸酯化合物之第2接著層。藉此,可防止矽烷偶合劑與磷酸酯化合物接觸,可抑制矽烷偶合劑之水解。因此,本實施形態之電路連接材料具有優異之儲存穩定性。 In contrast, the circuit connecting material of the present embodiment has a first adhesive layer containing a decane coupling agent and conductive particles, and a second adhesive layer containing a phosphate compound. Thereby, the decane coupling agent can be prevented from coming into contact with the phosphate compound, and hydrolysis of the decane coupling agent can be suppressed. Therefore, the circuit connecting material of the present embodiment has excellent storage stability.
第1接著層中,於含有矽烷偶合劑之接著劑組成物分散有導電性粒子。藉此,例如若將第1接著層配置於塗佈有氮化矽膜之玻璃基板且進行壓接,則可對氮化矽膜獲得較高之密接力,進而,可獲得導電性粒子之高粒子捕捉率。 In the first adhesive layer, conductive particles are dispersed in the adhesive composition containing a decane coupling agent. Therefore, for example, when the first adhesive layer is placed on a glass substrate coated with a tantalum nitride film and pressure-bonded, a high adhesion force can be obtained for the tantalum nitride film, and further, conductive particles can be obtained. Particle capture rate.
作為矽烷偶合劑,可列舉:甲基丙烯酸系、乙烯基系、環氧系、苯乙烯基系、丙烯酸系、胺基系、脲基系、巰基系、硫化物系、異氰酸酯系等。具體而言,可列舉:3-甲基丙烯醯氧基丙基三甲氧基矽烷、乙烯基三甲氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、對苯乙烯基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(三乙氧基矽烷基丙基)四硫化物、3-異氰酸酯基丙基三乙氧基矽烷等。該等可單獨使用,亦可組合2種以上而使用。該等中,本實施形態中可較佳地使用甲基丙烯酸系矽烷偶合劑。又,矽烷偶合劑之添加量相對於接著劑組成物100質量份,通常為0.01~5質量份。 Examples of the decane coupling agent include methacrylic, vinyl, epoxy, styrene, acrylic, amine, urea, sulfhydryl, sulfide, and isocyanate. Specific examples thereof include 3-methacryloxypropyltrimethoxydecane, vinyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and p-benzene. Vinyltrimethoxydecane, 3-propenyloxypropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxydecane, 3-ureidopropyl Triethoxy decane, 3-mercaptopropylmethyldimethoxydecane, bis(triethoxydecylpropyl)tetrasulfide, 3-isocyanatepropyltriethoxydecane, and the like. These may be used alone or in combination of two or more. Among these, a methacrylic decane coupling agent can be preferably used in the present embodiment. Further, the amount of the decane coupling agent to be added is usually 0.01 to 5 parts by mass based on 100 parts by mass of the adhesive composition.
作為導電性粒子,例如可使用鎳、金、銅等金屬粒子,對樹脂芯粒子實施鍍鎳、鍍銅、鍍金、鍍鈀等所成者等。又,關於導電性粒子之平均粒徑,就連接可靠性之觀點而言,較佳為1~20 μm,更佳為2~10 μm。又,關於接著劑組成物中之導電性粒子之平均粒子密度,就連接可靠 性及絕緣可靠性之觀點而言,較佳為1000~50000個/mm2,更佳為5000~30000個/mm2。 As the conductive particles, for example, metal particles such as nickel, gold, or copper can be used, and the resin core particles can be formed by plating nickel, copper plating, gold plating, or palladium plating. Further, the average particle diameter of the conductive particles is preferably from 1 to 20 μm, more preferably from 2 to 10 μm, from the viewpoint of connection reliability. Further, the average particle density of the conductive particles in the adhesive composition is preferably from 1,000 to 50,000 / mm 2 , more preferably from 5,000 to 30,000 / mm from the viewpoint of connection reliability and insulation reliability. 2 .
又,第1接著層之接著劑組成物含有膜形成樹脂、聚合性樹脂、及聚合起始劑。 Further, the adhesive composition of the first adhesive layer contains a film-forming resin, a polymerizable resin, and a polymerization initiator.
膜形成樹脂相當於平均分子量為10000以上之高分子量樹脂,就膜形成性之觀點而言,平均分子量較佳為10000~80000左右。作為膜形成樹脂,可列舉:苯氧基樹脂、聚酯胺酯樹脂、聚酯樹脂、聚胺酯樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、丁醛樹脂等各種樹脂;該等可單獨使用,亦可組合2種以上而使用。該等中,就膜形成狀態、連接可靠性等觀點而言,可較佳地使用苯氧基樹脂。膜形成樹脂之含量相對於接著劑組成物100質量份,通常為30~80質量份,較佳為40~70質量份。 The film-forming resin corresponds to a high molecular weight resin having an average molecular weight of 10,000 or more, and the average molecular weight is preferably about 10,000 to 80,000 from the viewpoint of film formability. Examples of the film-forming resin include various resins such as a phenoxy resin, a polyesteramine resin, a polyester resin, a polyurethane resin, an acrylic resin, a polyimide resin, and a butyral resin; these may be used alone or in combination. Two or more types can be combined and used. Among these, a phenoxy resin can be preferably used from the viewpoint of film formation state, connection reliability, and the like. The content of the film-forming resin is usually 30 to 80 parts by mass, preferably 40 to 70 parts by mass, per 100 parts by mass of the adhesive composition.
聚合性樹脂為自由基聚合性樹脂、陽離子聚合性樹脂等,可根據用途而適當選擇。 The polymerizable resin is a radical polymerizable resin or a cationically polymerizable resin, and can be appropriately selected depending on the use.
自由基聚合性樹脂為具有藉由自由基而進行聚合之官能基的物質,可列舉:環氧丙烯酸酯、丙烯酸胺酯、聚酯丙烯酸酯等,該等可單獨使用,亦可組合2種以上而使用。該等中,本實施形態中可較佳地使用環氧丙烯酸酯。自由基聚合性樹脂之含量相對於接著劑組成物100質量份,通常為10~60質量份,較佳為20~50質量份。 The radically polymerizable resin is a functional group having a functional group to be polymerized by a radical, and examples thereof include epoxy acrylate, urethane acrylate, and polyester acrylate. These may be used alone or in combination of two or more. And use. Among these, epoxy acrylate can be preferably used in the present embodiment. The content of the radically polymerizable resin is usually 10 to 60 parts by mass, preferably 20 to 50 parts by mass, per 100 parts by mass of the adhesive composition.
使用自由基聚合性樹脂時之自由基聚合起始劑可使用公知者,其中,可較佳地使用有機過氧化物。作為有機過氧化物,可列舉:過氧縮酮類、過氧化二醯基類、過氧化二碳酸酯類、過氧酯類、過氧化二烷基類、過氧化氫類、過氧化矽烷基類等,該等可單獨使用,亦可組合2種 以上而使用。該等中,本實施形態中可較佳地使用過氧縮酮類。自由基聚合起始劑之含量相對於自由基系接著劑組成物100質量份,通常為0.1~30質量份,較佳為1~20質量份。 A radical polymerization initiator which is used in the case of using a radical polymerizable resin can be used, and among them, an organic peroxide can be preferably used. Examples of the organic peroxide include peroxyketals, dioxonium peroxides, peroxydicarbonates, peroxyesters, dialkyl peroxides, hydrogen peroxides, and perylene alkyl peroxides. Class, etc., these can be used alone or in combination Use above. Among these, peroxyketals can be preferably used in the present embodiment. The content of the radical polymerization initiator is usually 0.1 to 30 parts by mass, preferably 1 to 20 parts by mass, per 100 parts by mass of the radical-based adhesive composition.
陽離子聚合性樹脂可使用單官能性環氧化合物、含雜環之環氧樹脂、脂肪族系環氧樹脂等。尤佳為單獨或混合使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、萘型環氧樹脂、酚醛清漆型環氧樹脂等環氧樹脂。 As the cationically polymerizable resin, a monofunctional epoxy compound, a hetero ring-containing epoxy resin, an aliphatic epoxy resin, or the like can be used. It is preferable to use an epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a naphthalene type epoxy resin, or a novolac type epoxy resin alone or in combination.
作為使用陽離子聚合性樹脂時之陽離子硬化劑,可使用陽離子種使環氧樹脂末端之環氧基開環而使環氧樹脂彼此自交聯者。作為此種陽離子硬化劑,可列舉:芳香族鋶鹽、芳香族重氮鹽、錪鹽、鏻鹽、硒鹽等鎓鹽。尤其是芳香族鋶鹽於低溫下之反應性優異,且適用期較長,因此作為陽離子硬化劑較佳。 As the cationic hardener used in the case of using a cationically polymerizable resin, a cationic species can be used to open the epoxy group at the end of the epoxy resin to self-crosslink the epoxy resins. Examples of such a cationic hardener include an onium salt such as an aromatic onium salt, an aromatic diazonium salt, a phosphonium salt, a phosphonium salt, and a selenium salt. In particular, the aromatic onium salt is excellent in reactivity at a low temperature and has a long pot life, and therefore is preferable as a cationic curing agent.
繼而,對第2接著層進行說明。第2接著層為含有磷酸酯化合物之接著劑組成物。藉由磷酸酯化合物,例如可對於形成有IZO(Indium Zinc Oxide)、ITO(Indium Tin Oxide)等金屬配線即透明導電膜的液晶面板獲得較高之密接力。 Next, the second subsequent layer will be described. The second adhesive layer is an adhesive composition containing a phosphate compound. By the phosphate compound, for example, a liquid crystal panel having a transparent conductive film which is a metal wiring such as IZO (Indium Zinc Oxide) or ITO (Indium Tin Oxide) can be obtained with high adhesion.
作為磷酸酯化合物,可列舉具有磷酸酯骨架之磷酸(甲基)丙烯酸酯等,具體而言,例如可列舉:單(2-甲基丙烯醯氧基乙基)酸式磷酸酯(mono(2-methacryloxyethyl)acid phosphate)、二(2-甲基丙烯醯氧基乙基)酸式磷酸酯、二苯基(2-丙烯醯氧基乙基)磷酸酯、二苯基(2-甲基丙烯醯氧基乙基)磷酸酯、苯基(2-丙烯醯氧基乙基)磷酸酯等。該等可單獨使用,亦可組合2種以上而使用。該等中,本實施形態中可較佳地使用單(2-甲基丙烯醯氧基乙基)酸式磷酸酯。磷酸酯化合物之含量相對於組成物100質量份,通常為 0.01~5質量份。 Examples of the phosphate compound include a phosphoric acid (meth) acrylate having a phosphate skeleton, and specific examples thereof include mono(2-methylpropenyloxyethyl) acid phosphate (mono(2). -methacryloxyethyl)acid phosphate), bis(2-methylpropenyloxyethyl) acid phosphate, diphenyl(2-propenyloxyethyl)phosphate, diphenyl (2-methylpropene)醯 oxyethyl) phosphate, phenyl (2-propenyl methoxyethyl) phosphate, and the like. These may be used alone or in combination of two or more. Among these, in the present embodiment, mono(2-methylpropenyloxyethyl) acid phosphate can be preferably used. The content of the phosphate compound is usually 100 parts by mass based on the composition. 0.01 to 5 parts by mass.
又,第2接著層之接著劑組成物與第1接著層同樣地含有膜形成樹脂、聚合性樹脂、及聚合起始劑。又,膜形成樹脂、聚合性樹脂、及聚合起始劑較佳為使用與第1接著層相同者,且使第1接著層與第2接著層之熔融黏度、最低熔融黏度到達溫度等之差較小。 In addition, the adhesive composition of the second adhesive layer contains a film-forming resin, a polymerizable resin, and a polymerization initiator in the same manner as the first adhesive layer. Further, it is preferable that the film forming resin, the polymerizable resin, and the polymerization initiator are the same as those of the first adhesive layer, and the difference between the melt viscosity of the first adhesive layer and the second adhesive layer and the lowest melt viscosity is reached. Smaller.
具體而言,第1接著層之熔融黏度與第2接著層之熔融黏度之差較佳為1000 Pa.s以下。又,第1接著層之最低熔融黏度到達溫度與第2接著層之最低熔融黏度到達溫度之差較佳為15℃以下。藉此,例如於將液晶面板與COF(Chip On Film,覆晶膜)壓接時,第1接著層與第2接著層可良好地摻混,使磷酸酯化合物作用於液晶面板側之配線與COF側之配線兩者。 Specifically, the difference between the melt viscosity of the first adhesive layer and the melt viscosity of the second adhesive layer is preferably 1000 Pa. s below. Further, the difference between the lowest melt viscosity reaching temperature of the first adhesive layer and the lowest melt viscosity reaching temperature of the second adhesive layer is preferably 15 ° C or lower. In this case, for example, when the liquid crystal panel is pressure-bonded to a COF (Chip On Film), the first adhesive layer and the second adhesive layer can be favorably blended, and the phosphate compound acts on the wiring on the liquid crystal panel side. Both wirings on the COF side.
繼而,對由上述電路連接材料所構成之異向性導電膜之製造方法進行說明。本實施形態之異向性導電膜之製造方法係於含有矽烷偶合劑及導電性粒子之第1接著層上,形成含有磷酸酯化合物之第2接著層。 Next, a method of manufacturing the anisotropic conductive film composed of the above-described circuit connecting material will be described. The method for producing an anisotropic conductive film of the present embodiment is to form a second adhesive layer containing a phosphate compound on the first adhesive layer containing a decane coupling agent and conductive particles.
具體而言,該製造方法具有如下步驟:形成含有矽烷偶合劑及導電性粒子之第1接著層之步驟;形成含有磷酸酯化合物之第2接著層之步驟;將第1接著層與第2接著層貼附之步驟。 Specifically, the production method has the steps of: forming a first subsequent layer containing a decane coupling agent and conductive particles; forming a second subsequent layer containing a phosphate compound; and forming a first subsequent layer and a second subsequent layer The steps attached to the layer.
於形成第1接著層之步驟中,使膜形成樹脂、聚合性樹脂、聚合起始劑、矽烷偶合劑、導電性粒子溶解於溶劑。作為溶劑,可使用甲苯、乙酸乙酯等、或該等之混合溶劑。製備第1接著層之樹脂組成物後,使用棒式塗佈機、塗佈裝置等而塗佈於脫模基材上。脫模基材例如由將聚矽氧等脫模劑塗佈於PET(Poly Ethylene Terephthalate,聚對苯二甲酸乙二 酯)、OPP(Oriented Polypropylene,延伸聚丙烯)、PMP(Poly-4-methylpentene-1,聚-4-甲基戊烯)、PTFE(Polytetrafluoroethylene,聚四氟乙烯)等之積層結構所構成,可防止異向性導電材料中之樹脂乾燥,並且維持樹脂之形狀。 In the step of forming the first subsequent layer, a film-forming resin, a polymerizable resin, a polymerization initiator, a decane coupling agent, and conductive particles are dissolved in a solvent. As the solvent, toluene, ethyl acetate or the like, or a mixed solvent of these may be used. After preparing the resin composition of the first adhesive layer, it is applied onto a release substrate by using a bar coater, a coating device, or the like. The release substrate is coated, for example, by a release agent such as polyfluorene oxide on PET (Poly Ethylene Terephthalate, polyethylene terephthalate). Epoxy), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1, poly-4-methylpentene), PTFE (Polytetrafluoroethylene), etc. The resin in the anisotropic conductive material is prevented from drying and the shape of the resin is maintained.
繼而,利用熱烘箱、加熱乾燥裝置等而將塗佈於脫模基材上之異向性導電材料乾燥。藉此,可獲得厚度5~50 μm左右之第1接著層。 Then, the anisotropic conductive material coated on the release substrate is dried by a hot oven, a heating and drying device or the like. Thereby, the first adhesive layer having a thickness of about 5 to 50 μm can be obtained.
又,形成第2接著層之步驟與第1接著層相同,使膜形成樹脂、聚合性樹脂、聚合起始劑、磷酸酯化合物溶解於溶劑而製備第2接著層之樹脂組成物後,將其塗佈於脫模片,使溶劑揮發而獲得第2接著層。 In addition, the step of forming the second adhesive layer is the same as that of the first adhesive layer, and the resin composition, the polymerizable resin, the polymerization initiator, and the phosphate compound are dissolved in a solvent to prepare a resin composition of the second adhesive layer. The film was applied to a release sheet, and the solvent was volatilized to obtain a second subsequent layer.
繼而,於將第1接著層與第2接著層貼附之步驟中,剝離第2接著層之脫模片後貼附於第1接著層上。 Then, in the step of attaching the first adhesive layer and the second adhesive layer, the release sheet of the second adhesive layer is peeled off and attached to the first adhesive layer.
藉由以上述方式將第1接著層與第2接著層貼附,可獲得於脫模基材上依序積層有第1接著層與第2接著層之異向性導電膜。 By attaching the first adhesive layer and the second adhesive layer in the above manner, an anisotropic conductive film in which the first adhesive layer and the second adhesive layer are sequentially laminated on the release substrate can be obtained.
再者,於上述實施形態中,係將第1接著層與第2接著層貼附而製造異向性導電膜,但並不限定於此,亦可於形成一接著層後,塗佈另一接著層之樹脂組成物且使其乾燥而進行製造。 Further, in the above embodiment, the first adhesive layer and the second adhesive layer are attached to each other to produce an anisotropic conductive film. However, the present invention is not limited thereto, and after forming an adhesive layer, another coating may be applied. The resin composition of the layer is then dried and produced.
繼而,對使用上述電路連接材料之電子零件之安裝方法進行說明。本實施形態之電子零件之安裝方法具有如下步驟:於第1電子零件之電極上,將具有第1接著層與第2接著層之異向性導電膜、以及第2電子零件以第1接著層位於第1電子零件上的方式依序配置之步驟,上述第1接著層含有矽烷偶合劑及導電性粒子,上述第2接著層含有磷酸酯化合物;及利用壓接頭自第2電子零件之上表面進行按壓之步驟。藉此,可將第1電子零件 之電極與第2電子零件之電極經由導電性粒子而連接,且使異向性導電膜硬化。 Next, a method of mounting the electronic component using the above-described circuit connecting material will be described. The method of mounting an electronic component according to the present embodiment includes the step of: forming an anisotropic conductive film having a first adhesive layer and a second adhesive layer on the electrode of the first electronic component, and forming a second adhesive layer on the second electronic component a step of sequentially arranging the first electronic component, wherein the first adhesive layer contains a decane coupling agent and conductive particles, the second adhesive layer contains a phosphate compound, and the upper surface of the second electronic component is formed by a crimping joint The step of pressing. Thereby, the first electronic component can be The electrode and the electrode of the second electronic component are connected via the conductive particles, and the anisotropic conductive film is cured.
此處,作為第1電子零件,可列舉於玻璃基板塗佈有IZO(Indium Zinc Oxide)膜之IZO塗佈玻璃、於玻璃基板塗佈有SiNx(氮化矽)膜之SiNx塗佈玻璃等。又,作為第2電子零件,可列舉COF(Chip On Film)、IC(Integrated Circuit)等。 Here, as the first electronic component, include a glass substrate coated with IZO (Indium Zinc Oxide) IZO film of the coated glass, a glass substrate coated with the SiN x (silicon nitride) of the SiN x film coated glass Wait. Further, examples of the second electronic component include COF (Chip On Film) and IC (Integrated Circuit).
圖2係表示液晶面板之連接部之一部分的平面圖。如圖2所示,於液晶面板之連接部10,形成有IZO(Indium Zinc Oxide)、ITO(Indium Tin Oxide)等透明導電膜11,於其周圍表面形成有SiNx等透明絕緣膜12。 Fig. 2 is a plan view showing a part of a connection portion of a liquid crystal panel. As shown in FIG. 2, a transparent conductive film 11 such as IZO (Indium Zinc Oxide) or ITO (Indium Tin Oxide) is formed on the connection portion 10 of the liquid crystal panel, and a transparent insulating film 12 such as SiN x is formed on the peripheral surface thereof.
於本實施形態中,由於係使含有矽烷偶合劑及導電性粒子之第1接著層接觸於液晶面板之連接部10上而進行壓接,故而可對透明絕緣膜12獲得較高之密接力,進而,可獲得導電性粒子之高粒子捕捉率。又,由於第1接著層與第2接著層良好地摻混,故而可使磷酸酯化合物作用於液晶面板之透明導電膜11。 In the present embodiment, since the first adhesive layer containing the decane coupling agent and the conductive particles is brought into contact with the connecting portion 10 of the liquid crystal panel to be pressure-bonded, a high adhesion force can be obtained for the transparent insulating film 12. Further, a high particle capture ratio of the conductive particles can be obtained. Further, since the first adhesive layer and the second adhesive layer are well blended, the phosphate compound can be applied to the transparent conductive film 11 of the liquid crystal panel.
以下,對本發明之實施例進行說明。此處,製作具有含有矽烷偶合劑及導電性粒子之第1接著層、與含有磷酸酯化合物之第2接著層的異向性導電膜,進行儲存穩定性加速試驗。又,研究第1接著層與第2接著層之熔融黏度及最低熔融黏度到達溫度對接著強度之影響。再者,本發明並不限定於該等實施例。 Hereinafter, embodiments of the invention will be described. Here, an anisotropic conductive film having a first adhesive layer containing a decane coupling agent and conductive particles and a second adhesive layer containing a phosphate compound was prepared, and a storage stability acceleration test was performed. Further, the effects of the melt viscosity and the lowest melt viscosity of the first and second adhesive layers on the temperature and the subsequent strength were investigated. Furthermore, the invention is not limited to the embodiments.
儲存穩定性加速試驗、接著強度之測定、熔融黏度及最低熔 融黏度到達溫度之測定係以下述方式進行。 Accelerated storage stability test, subsequent strength measurement, melt viscosity and minimum melting The measurement of the melt viscosity to the temperature was carried out in the following manner.
利用30℃-80%RH之烘箱,對異向性導電膜進行8小時膜老化。然後,使用老化後之異向性導電膜製作構裝體,測定接著強度。 The anisotropic conductive film was subjected to film aging for 8 hours using an oven of 30 ° C - 80% RH. Then, a structure was produced using an anisotropic conductive film after aging, and the bonding strength was measured.
使用拉伸試驗機(產品編號:RTC1201,AND公司製造),對玻璃基板與COF(Chip On Film)之構裝體的初期接著強度進行測定。將測定速度設為50 mm/sec,測定於90度方向上提拉COF時之接著強度。 The initial adhesion strength of the glass substrate and the COF (Chip On Film) package was measured using a tensile tester (product number: RTC1201, manufactured by AND Corporation). The measurement speed was set to 50 mm/sec, and the adhesion strength when the COF was pulled in the 90-degree direction was measured.
將異向性導電膜重疊成500 μm厚,使用熔融黏度計(HAAKE Rheostress RS-150,Thermo Fisher Scientific公司製造),於升溫溫度10℃/min、頻率1 Hz、加壓壓力1 N、測定溫度範圍30~180℃之條件下進行測定。 The anisotropic conductive film was stacked to a thickness of 500 μm, and a melt viscosity meter (HAAKE Rheostress RS-150, manufactured by Thermo Fisher Scientific Co., Ltd.) was used at a temperature rise temperature of 10 ° C/min, a frequency of 1 Hz, a pressurization pressure of 1 N, and a measurement temperature. The measurement was carried out under the conditions of a range of 30 to 180 °C.
於由以固形物成分換算為70質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、及30質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)所構成之組成物中,使平均粒徑5 μm之導電性粒子(品名:AUL705,積水化學工業公司製造)以成為粒子密度10000個/mm2之方式分散。繼而,加入反應起始劑(品名:Perhexa C,日本油脂公司製造)2質量份、及矽烷偶合劑(品名:KBM-503,信越化學工業製造)2質量份而製備。使用棒式塗佈機將該接著劑組成物塗佈於PET膜上,利用烘 箱進行乾燥,製作厚度10 μm之第1接著層。 a phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 30 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.) in an amount of 70 parts by mass in terms of solid content In the composition, the conductive particles (product name: AUL705, manufactured by Sekisui Chemical Co., Ltd.) having an average particle diameter of 5 μm were dispersed so as to have a particle density of 10,000 particles/mm 2 . Then, 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.) and 2 parts by mass of a decane coupling agent (product name: KBM-503, manufactured by Shin-Etsu Chemical Co., Ltd.) were added. This adhesive composition was applied onto a PET film using a bar coater, and dried in an oven to prepare a first adhesive layer having a thickness of 10 μm.
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、2質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate ester acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater was applied onto a PET film and dried in an oven to prepare a second adhesive layer having a thickness of 10 μm.
將厚度10 μm之第1接著層與厚度10 μm之第2接著層貼附,而製作雙層結構之異向性導電膜。 The first adhesive layer having a thickness of 10 μm and the second adhesive layer having a thickness of 10 μm were attached to each other to form an anisotropic conductive film having a two-layer structure.
將切割成1.5 mm寬之異向性導電膜,使用150 μm厚之緩衝材料(聚四氟乙烯),利用1.5 mm寬工具之暫時壓接機,於70℃-1 MPa-1 sec之條件下暫時壓接於評價用玻璃基板(塗佈有250 nm之IZO(Indium Zinc Oxide)之玻璃)。繼而,於80℃-0.5 MPa-0.5 sec之條件下,利用上述壓接機將評價用COF(50 μmP,Cu8 μmt-鍍Sn,38 μmt)暫時固定,最後於190℃-2 MPa-10 Sec之條件下,利用使用1.5 mm寬工具之正式壓接機進行壓接,製作構裝體。 It will be cut into a 1.5 mm wide anisotropic conductive film using a 150 μm thick buffer material (polytetrafluoroethylene) using a temporary crimping machine with a 1.5 mm wide tool at 70 ° C - 1 MPa - 1 sec. The glass substrate for evaluation (glass coated with IZO (Indium Zinc Oxide) of 250 nm) was temporarily pressed. Then, the evaluation COF (50 μmP, Cu8 μmt-plated Sn, 38 μmt) was temporarily fixed by the above-mentioned crimping machine at 80 ° C - 0.5 MPa - 0.5 sec, and finally at 190 ° C - 2 MPa - 10 Sec Under the conditions, the assembly was fabricated by crimping using a formal crimping machine using a 1.5 mm wide tool.
將實施例1之評價結果示於表1。於實施例1中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、1320 Pa.s,第1接著層及第2接著層之最 低熔融黏度到達溫度分別為117℃、110℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為8.0 N/cm、7.8 N/cm。 The evaluation results of Example 1 are shown in Table 1. In Example 1, the first adhesive layer and the second adhesive layer have a melt viscosity of 1830 Pa. s, 1320 Pa. s, the first and second layers The low melt viscosity reached temperatures of 117 ° C and 110 ° C, respectively. Further, the storage strengths before and after the accelerated test were 8.0 N/cm and 7.8 N/cm, respectively.
於由苯氧基樹脂(品名:YP-50,東都化成公司製造)70質量份、自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)30質量份所構成之組成物中,使平均粒徑5 μm之導電性粒子(品名:AUL705,積水化學工業公司製造)以成為粒子密度10000個/mm2之方式分散。繼而,加入反應起始劑(品名:Perhexa C,日本油脂公司製造)2質量份、矽烷偶合劑(品名:KBM-503,信越化學工業製造)2質量份、及磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)2質量份而製備,並使用棒式塗佈機將該接著劑組成物塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第1接著層。 In a composition comprising 70 parts by mass of a phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 30 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), Conductive particles (product name: AUL705, manufactured by Sekisui Chemical Co., Ltd.) having an average particle diameter of 5 μm were dispersed so as to have a particle density of 10,000 particles/mm 2 . Then, 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), 2 parts by mass of a decane coupling agent (product name: KBM-503, manufactured by Shin-Etsu Chemical Co., Ltd.), and a phosphate ester acrylate (product name: P) were added. -2M, manufactured by Kyoei Chemical Co., Ltd.) was prepared in an amount of 2 parts by mass, and the adhesive composition was applied onto a PET film using a bar coater, and dried in an oven to prepare a first adhesive layer having a thickness of 10 μm. .
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、2質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、2質量份矽烷偶合劑(品名:KBM-503,信越化學工業製造)及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), 2 parts by mass of a decane coupling agent (product name: KBM-503, manufactured by Shin-Etsu Chemical Co., Ltd.), and 2 parts by mass of a phosphate ester acrylate (product name: P- The adhesive composition composed of 2M (manufactured by Kyoei Chemical Co., Ltd.) was applied onto a PET film using a bar coater, and dried in an oven to prepare a second adhesive layer having a thickness of 10 μm.
除第1接著層及第2接著層以外,以與實施例1相同之方式 製作異向性導電膜及構裝體。 The same manner as in the first embodiment except for the first subsequent layer and the second subsequent layer An anisotropic conductive film and a package are produced.
將比較例1之評價結果示於表1。於比較例1中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、1320 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、110℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為7.9 N/cm、2.3 N/cm。 The evaluation results of Comparative Example 1 are shown in Table 1. In Comparative Example 1, the melt viscosities of the first adhesive layer and the second adhesive layer were 1830 Pa, respectively. s, 1320 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 110 ° C, respectively. Further, the storage strengths before and after the accelerated test were 7.9 N/cm and 2.3 N/cm, respectively.
如表1所示,於第1接著層及第2接著層兩者中均調配有矽烷偶合劑及磷酸酯化合物之比較例1中,加速試驗後接著強度下降。另一方面,將磷酸酯化合物與矽烷偶合劑分開調配於第1接著層及第2接著層之各者中之實施例1中,加速試驗後接著強度未下降。因此,可知藉由實施例1可獲得優異之儲存穩定性。 As shown in Table 1, in Comparative Example 1 in which a decane coupling agent and a phosphate compound were blended in both the first adhesive layer and the second adhesive layer, the strength was lowered after the accelerated test. On the other hand, in the first example in which the phosphate compound and the decane coupling agent were separately disposed in each of the first adhesive layer and the second adhesive layer, the strength was not lowered after the accelerated test. Therefore, it is understood that excellent storage stability can be obtained by Example 1.
將由以固形物成分換算為50質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、50質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、2質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第2接著層。 50 parts by mass of a phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 50 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.) in an amount of 50 parts by mass of the solid content. 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate ester acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater was applied onto a PET film and dried in an oven to prepare a second adhesive layer having a thickness of 10 μm.
除第2接著層以外,以與實施例1相同之方式製作異向性導電膜及構裝體。 An anisotropic conductive film and a structure were produced in the same manner as in Example 1 except for the second adhesive layer.
將實施例2之評價結果示於表2。於實施例2中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、830 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、112℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為8.1 N/cm、7.9 N/cm。 The evaluation results of Example 2 are shown in Table 2. In Example 2, the melt viscosities of the first adhesive layer and the second adhesive layer were 1830 Pa, respectively. s, 830 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 112 ° C, respectively. Further, the storage strengths before and after the accelerated test were 8.1 N/cm and 7.9 N/cm, respectively.
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-70,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、2質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥, 製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-70, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 2 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate ester acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater is coated on a PET film and dried in an oven. A second subsequent layer having a thickness of 10 μm was produced.
除第2接著層以外,以與實施例1相同之方式製作異向性導電膜及構裝體。 An anisotropic conductive film and a structure were produced in the same manner as in Example 1 except for the second adhesive layer.
將比較例2之評價結果示於表2。於比較例2中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、530 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、108℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為2.8 N/cm、2.5 N/cm。 The evaluation results of Comparative Example 2 are shown in Table 2. In Comparative Example 2, the melt viscosities of the first adhesive layer and the second adhesive layer were respectively 1830 Pa. s, 530 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 108 ° C, respectively. Further, the storage strengths before and after the accelerated test were 2.8 N/cm and 2.5 N/cm, respectively.
如表2所示,第1接著層與第2接著層之熔融黏度之差較大的比較例2中,於加速試驗前無法獲得較高之接著強度。另一方面,藉由如實施例1、2般使第1接著層與第2接著層之熔融黏度之差為1000 Pa.s以下,第1接著層與第2接著層可良好地摻混,而獲得較高之接著強度。 As shown in Table 2, in Comparative Example 2 in which the difference in melt viscosity between the first adhesive layer and the second adhesive layer was large, a high adhesive strength could not be obtained before the accelerated test. On the other hand, the difference in melt viscosity between the first adhesive layer and the second adhesive layer was 1000 Pa as in Examples 1 and 2. Below s, the first adhesive layer and the second adhesive layer are well blended to obtain a higher adhesive strength.
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、3質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 3 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater was applied onto a PET film and dried in an oven to prepare a second adhesive layer having a thickness of 10 μm.
除第2接著層以外,以與實施例1相同之方式製作異向性導電膜及構裝體。 An anisotropic conductive film and a structure were produced in the same manner as in Example 1 except for the second adhesive layer.
將實施例3之評價結果示於表3。於實施例3中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、1320 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、102℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為8.2 N/cm、8.0 N/cm。 The evaluation results of Example 3 are shown in Table 3. In Example 3, the melt viscosities of the first adhesive layer and the second adhesive layer were 1830 Pa, respectively. s, 1320 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 102 ° C, respectively. Further, the storage strengths before and after the accelerated test were 8.2 N/cm and 8.0 N/cm, respectively.
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-50,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、5質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥, 製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-50, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 5 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater is coated on a PET film and dried in an oven. A second subsequent layer having a thickness of 10 μm was produced.
除第2接著層以外,以與實施例1相同之方式製作異向性導電膜及構裝體。 An anisotropic conductive film and a structure were produced in the same manner as in Example 1 except for the second adhesive layer.
將比較例3之評價結果示於表3。於比較例3中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、1320 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、97℃。又,儲存穩定性之加速試驗前及加速試驗後之接著強度分別為3.2 N/cm、2.8 N/cm。 The evaluation results of Comparative Example 3 are shown in Table 3. In Comparative Example 3, the melt viscosities of the first adhesive layer and the second adhesive layer were 1830 Pa, respectively. s, 1320 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 97 ° C, respectively. Further, the storage strengths before and after the accelerated test were 3.2 N/cm and 2.8 N/cm, respectively.
將由以固形物成分換算為60質量份之苯氧基樹脂(品名:YP-70,東都化成公司製造)、40質量份自由基聚合性樹脂(品名:EB-600,Daicel-Cytec公司製造)、5質量份反應起始劑(品名:Perhexa C,日本油脂公司製造)、及2質量份磷酸酯丙烯酸酯(品名:P-2M,共榮化學公司製造)所構成之接著劑組成物,使用棒式塗佈機塗佈於PET膜上,並利用烘箱進行乾燥,製作厚度10 μm之第2接著層。 A phenoxy resin (product name: YP-70, manufactured by Tohto Kasei Co., Ltd.) and 40 parts by mass of a radical polymerizable resin (product name: EB-600, manufactured by Daicel-Cytec Co., Ltd.), which is converted into a solid content of 60 parts by mass, 5 parts by mass of a reaction initiator (product name: Perhexa C, manufactured by Nippon Oil & Fats Co., Ltd.), and 2 parts by mass of a phosphate acrylate (product name: P-2M, manufactured by Kyoei Chemical Co., Ltd.), using a stick The coater was applied onto a PET film and dried in an oven to prepare a second adhesive layer having a thickness of 10 μm.
除第2接著層以外,以與實施例1相同之方式製作異向性導電膜及構裝體。 An anisotropic conductive film and a structure were produced in the same manner as in Example 1 except for the second adhesive layer.
將比較例4之評價結果示於表3。於比較例4中,第1接著層及第2接著層之熔融黏度分別為1830 Pa.s、530 Pa.s,第1接著層及第2接著層之最低熔融黏度到達溫度分別為117℃、98℃。又,儲存穩定性之加速試驗前及 加速試驗後之接著強度分別為3.2 N/cm、2.8 N/cm。 The evaluation results of Comparative Example 4 are shown in Table 3. In Comparative Example 4, the melt viscosities of the first adhesive layer and the second adhesive layer were 1830 Pa, respectively. s, 530 Pa. s, the lowest melt viscosity reaching temperatures of the first adhesive layer and the second adhesive layer were 117 ° C and 98 ° C, respectively. Also, before the accelerated test of storage stability The subsequent strength after the accelerated test was 3.2 N/cm and 2.8 N/cm, respectively.
如表3所示,第1接著層與第2接著層之最低熔融黏度到達溫度之差較大的比較例3中,於加速試驗前無法獲得較高之接著強度。進而,第1接著層與第2接著層之熔融黏度之差較大的比較例4中於加速試驗前亦無法獲得較高之接著強度。另一方面,藉由如實施例1~3般使第1接著層與第2接著層之最低熔融黏度到達溫度之差為15℃以下,第1接著層與第2接著層可良好地摻混,可獲得較高之接著強度。 As shown in Table 3, in Comparative Example 3 in which the difference in the lowest melt viscosity of the first adhesive layer and the second adhesive layer was large, a high adhesive strength could not be obtained before the accelerated test. Further, in Comparative Example 4 in which the difference in melt viscosity between the first adhesive layer and the second adhesive layer was large, a high adhesive strength could not be obtained before the accelerated test. On the other hand, the difference between the lowest melt viscosity and the temperature of the first adhesive layer and the second adhesive layer is 15° C. or less as in the first to third embodiments, and the first adhesive layer and the second adhesive layer can be well blended. , a higher bond strength can be obtained.
Claims (7)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012054831A JP5934528B2 (en) | 2012-03-12 | 2012-03-12 | CIRCUIT CONNECTION MATERIAL, AND METHOD FOR MANUFACTURING MOUNTING BODY USING THE SAME |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201343872A true TW201343872A (en) | 2013-11-01 |
TWI548718B TWI548718B (en) | 2016-09-11 |
Family
ID=49160895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102107556A TWI548718B (en) | 2012-03-12 | 2013-03-05 | A circuit-connecting material, and a method of manufacturing the same |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5934528B2 (en) |
KR (1) | KR20140142285A (en) |
TW (1) | TWI548718B (en) |
WO (1) | WO2013136979A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6177642B2 (en) * | 2013-09-26 | 2017-08-09 | デクセリアルズ株式会社 | Connection film, connection structure, method for manufacturing connection structure, connection method |
JP2016184521A (en) | 2015-03-26 | 2016-10-20 | オートモーティブエナジーサプライ株式会社 | Nonaqueous electrolyte secondary battery |
CN111995975B (en) | 2015-11-04 | 2022-12-02 | 日立化成株式会社 | Adhesive composition and structure |
JP6915544B2 (en) | 2015-11-04 | 2021-08-04 | 昭和電工マテリアルズ株式会社 | Adhesive composition and structure |
JP6958359B2 (en) | 2015-11-25 | 2021-11-02 | 昭和電工マテリアルズ株式会社 | Adhesive composition and structure |
CN109804508B (en) | 2016-10-11 | 2021-08-03 | 昭和电工材料株式会社 | Connection structure, circuit connection member, and adhesive composition |
JP6431572B2 (en) * | 2017-07-12 | 2018-11-28 | デクセリアルズ株式会社 | Connection film, connection film manufacturing method, connection structure, connection structure manufacturing method, and connection method |
JP7039984B2 (en) * | 2017-12-14 | 2022-03-23 | 昭和電工マテリアルズ株式会社 | Adhesive composition for circuit connection and circuit connection structure |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW459032B (en) * | 1998-03-18 | 2001-10-11 | Sumitomo Bakelite Co | An anisotropic conductive adhesive and method for preparation thereof and an electronic apparatus using said adhesive |
JP3449948B2 (en) * | 1998-10-13 | 2003-09-22 | 住友ベークライト株式会社 | Method of manufacturing anisotropic conductive adhesive and electronic device manufactured using adhesive manufactured by the method |
JP2001254058A (en) * | 2000-01-06 | 2001-09-18 | Sumitomo Bakelite Co Ltd | Anisometric conductive adhesive |
JP4259055B2 (en) * | 2002-07-10 | 2009-04-30 | 株式会社ブリヂストン | Anisotropic conductive film |
JP4461767B2 (en) * | 2003-10-16 | 2010-05-12 | 株式会社ブリヂストン | Anisotropic conductive film |
CN104059547B (en) * | 2008-09-30 | 2016-08-24 | 迪睿合电子材料有限公司 | Anisotropic conductive adhesive and use the preparation method of connection structural bodies of this binding agent |
-
2012
- 2012-03-12 JP JP2012054831A patent/JP5934528B2/en not_active Expired - Fee Related
-
2013
- 2013-02-27 KR KR20147028179A patent/KR20140142285A/en not_active Application Discontinuation
- 2013-02-27 WO PCT/JP2013/055046 patent/WO2013136979A1/en active Application Filing
- 2013-03-05 TW TW102107556A patent/TWI548718B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2013191625A (en) | 2013-09-26 |
WO2013136979A1 (en) | 2013-09-19 |
JP5934528B2 (en) | 2016-06-15 |
KR20140142285A (en) | 2014-12-11 |
TWI548718B (en) | 2016-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI548718B (en) | A circuit-connecting material, and a method of manufacturing the same | |
US9023464B2 (en) | Connecting film, and joined structure and method for producing the same | |
TWI593774B (en) | Anisotropic conductive film and semiconductor device bonded by the same | |
WO2004060996A1 (en) | Curing resin composition, adhesive epoxy resin paste, adhesive epoxy resin sheet, conductive connection paste, conductive connection sheet, and electronic component joined body | |
TWI588235B (en) | Anisotropic conductive film, connecting method, and joined structure | |
WO2008023452A1 (en) | Adhesive tape, joint structure, and semiconductor package | |
JP5644067B2 (en) | Insulation coated conductive particles | |
CN106471077B (en) | Adhesive film and semiconductor package using the same | |
TWI455152B (en) | Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member | |
JP4449325B2 (en) | Adhesive film for semiconductor, semiconductor device, and manufacturing method of semiconductor device. | |
TWI542652B (en) | A circuit connecting material and a connecting method using the same, and a connecting structure | |
TW201308354A (en) | Material for connecting circuit and connecting structure for circuit substrate | |
JP2011233633A (en) | Circuit connection material, and connection body for circuit member | |
KR102321167B1 (en) | Adhesive composition and connected structure | |
WO2013157378A1 (en) | Circuit connection material, and manufacturing method for assembly using same | |
JP5956362B2 (en) | Anisotropic conductive film, connection method, and joined body | |
KR102113551B1 (en) | Circuit connection material and manufacturing method for assembly using same | |
JP2013214417A (en) | Circuit connection material, circuit connection material structure and manufacturing method of circuit connection material structure | |
JP6007022B2 (en) | Circuit connection material | |
JP4730215B2 (en) | Anisotropic conductive adhesive film | |
TWI734841B (en) | Connection structure, circuit connection member and adhesive composition | |
TWI811185B (en) | Adhesive composition and structure | |
JP2004352785A (en) | Anisotropic electroconductive adhesive | |
TWI452103B (en) | Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member | |
KR20230092943A (en) | Adhesive film for circuit connection, connection structure, and manufacturing method of connection structure |