TW201339342A - Alloy and sputtering target material used for soft magnetic thin film layer in perpendicular magnetic recording medium and perpendicular magnetic recording medium having soft magnetic thin film layer - Google Patents
Alloy and sputtering target material used for soft magnetic thin film layer in perpendicular magnetic recording medium and perpendicular magnetic recording medium having soft magnetic thin film layer Download PDFInfo
- Publication number
- TW201339342A TW201339342A TW101135292A TW101135292A TW201339342A TW 201339342 A TW201339342 A TW 201339342A TW 101135292 A TW101135292 A TW 101135292A TW 101135292 A TW101135292 A TW 101135292A TW 201339342 A TW201339342 A TW 201339342A
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy
- recording medium
- soft magnetic
- film layer
- magnetic recording
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 36
- 239000000956 alloy Substances 0.000 title claims abstract description 36
- 238000005477 sputtering target Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title abstract description 6
- 239000013077 target material Substances 0.000 title abstract 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 25
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 24
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 6
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 abstract description 6
- 229910001004 magnetic alloy Inorganic materials 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 27
- 239000000203 mixture Substances 0.000 description 20
- 230000007423 decrease Effects 0.000 description 13
- 238000007792 addition Methods 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 125000005843 halogen group Chemical group 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 241000053208 Porcellio laevis Species 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/005—Ferrous alloys, e.g. steel alloys containing rare earths, i.e. Sc, Y, Lanthanides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
該申請,係根據在2011年9月26日申請之日本專利申請2011-209856號案主張優先權之申請案,參閱其整體的揭示內容載入到本說明書中。 The application is based on the priority of Japanese Patent Application No. 2011-209856, filed on Sep. 26, 2011, the entire disclosure of which is incorporated herein.
本發明,係有關垂直磁記錄媒體之軟磁性薄膜層用(Co、Fe)-鑭系元素合金及濺鍍靶材。 The present invention relates to a (Co, Fe)-lanthanide alloy and a sputtering target for a soft magnetic film layer of a perpendicular magnetic recording medium.
磁記錄技術顯著進步,為了裝置的大容量化,早已持續朝磁記錄媒體的高記錄密度化演進,可以實現比過去曾普及過一陣子的縱向磁記錄媒體更高記錄密度的垂直磁記錄方式實用化中。所謂垂直磁記錄方式,乃是針對垂直磁記錄媒體的磁性膜中的媒體面形成易磁化軸配向在垂直方向上之方式,適用在高記錄密度之方法。還有,在垂直磁記錄方式中,具有提高記錄敏感度的磁記錄膜層與軟磁性膜層之2層記錄媒體正在開發中。該磁記錄膜層方面,一般使用CoCrPt-SiO2系合金。 The magnetic recording technology has been significantly improved. In order to increase the capacity of the device, it has been continuously evolving toward the high recording density of magnetic recording media, and it is possible to realize a perpendicular magnetic recording method with higher recording density than the longitudinal magnetic recording medium which has been popular for a while in the past. In the middle. The perpendicular magnetic recording method is a method in which the medium surface in the magnetic film of the perpendicular magnetic recording medium is formed such that the easy magnetization axis is aligned in the vertical direction, and is suitable for a high recording density. Further, in the perpendicular magnetic recording method, a two-layer recording medium having a magnetic recording film layer and a soft magnetic film layer for improving recording sensitivity is being developed. As the magnetic recording film layer, a CoCrPt-SiO 2 -based alloy is generally used.
另一方面,在以往的軟磁性膜層方面,高飽和磁通密度(以下,記為Bs)與非晶質性是有必要,更進一步利用垂直磁記錄媒體的用途或使用環境,可以附加要求高耐蝕性、高硬度等各式各樣的特性。例如,在日本特開2008-299905號專利公報(專利文獻1)中,利用添加Fe 來得到高Bs,利用添加B來得到高硬度。又,在日本特開2011-68985號專利公報(專利文獻2)中,經由添加Y或Ti來改善耐蝕性(耐候性)。 On the other hand, in the conventional soft magnetic film layer, high saturation magnetic flux density (hereinafter referred to as Bs) and amorphous property are necessary, and further use of the use or environment of the perpendicular magnetic recording medium can be additionally required. High corrosion resistance, high hardness and other various characteristics. For example, in Japanese Patent Laid-Open Publication No. 2008-299905 (Patent Document 1), the use of Fe is added. To obtain high Bs, use B to obtain high hardness. Further, in JP-A-2011-68985 (Patent Document 2), corrosion resistance (weather resistance) is improved by adding Y or Ti.
近年來,經由裝置中的讀寫用頭的改良、或調整軟磁性合金的磁通密度最佳化軟磁性膜與Ru膜的交換偶合磁場,可以進行在比以往更低的磁通下的寫入。因此,作為配置在記錄層之下的軟磁性層,檢討有不是以往那樣的高Bs,而是比較低Bs的非晶質合金。如此,使用低Bs合金作為垂直磁記錄媒體的軟磁性層的話,軟磁性膜中的記錄磁化,不會過度地磁影響到周圍,結果可以記錄到較小的空間。該現象,係考慮到了因「滲寫」的減低,明顯改善記錄密度。 In recent years, it is possible to perform writing at a lower magnetic flux than conventional ones by improving the read/write head in the apparatus or by adjusting the magnetic flux density of the soft magnetic alloy to optimize the exchange coupling magnetic field between the soft magnetic film and the Ru film. In. Therefore, as a soft magnetic layer disposed under the recording layer, it is considered that there is a high Bs as in the prior art, and an amorphous alloy having a relatively low Bs is used. Thus, when a low-Bs alloy is used as the soft magnetic layer of the perpendicular magnetic recording medium, the recording magnetization in the soft magnetic film does not excessively magnetically affect the surroundings, and as a result, it can be recorded in a small space. This phenomenon is considered to reduce the recording density significantly due to the reduction of "bleeding".
〔專利文獻1〕日本特開2008-299905號專利公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-299905
〔專利文獻2〕日本特開2011-68985號專利公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-68985
但是,使用具有如上述那樣低的Bs非晶質合金到垂直磁記錄媒體的軟磁性層的話,明顯產生新的課題。亦即,具有低的Bs的非晶質合金,係隨著溫度的上升Bs的下降幅度變大,裝置暴露在比室溫高的溫度環境(例如70~150℃左右)之下的Bs顯著降低,變成無法充分發揮作 為垂直磁記錄媒體的軟磁性層的功能之缺憾。 However, when a soft magnetic layer having a low Bs amorphous alloy as described above to a perpendicular magnetic recording medium is used, a new problem is clearly generated. That is, the amorphous alloy having a low Bs has a large decrease in the Bs as the temperature rises, and the Bs of the device exposed to a temperature higher than room temperature (for example, about 70 to 150 ° C) is significantly lowered. Become unable to fully play It is a defect of the function of the soft magnetic layer of the perpendicular magnetic recording medium.
為了消解上述那樣的問題,本發明者們對有關在垂直磁記錄媒體的軟磁性膜用合金的室溫下的Bs與其溫度特性,詳細檢討各式各樣的添加元素的結果,在室溫的Bs與從室溫到150℃為止的Bs的下降幅度方面清楚到了有逆相關。但是,添加屬於鑭系元素的話,會出乎該逆相關的關係,比較在室溫具有同等的Bs的合金,發現到顯然抑制縮小了至150℃為止的Bs下降幅度,完成了本發明。 In order to solve the above problems, the inventors of the present invention examined the results of various types of additive elements in the Bs at room temperature of the alloy for soft magnetic films in a perpendicular magnetic recording medium, and at room temperature. It is clear that there is an inverse correlation between Bs and the decrease in Bs from room temperature to 150 °C. However, when the addition of a lanthanoid element is caused by the inverse correlation, the alloy having the same Bs at room temperature is compared, and it is found that the decrease in Bs is suppressed to a reduction of 150 ° C, and the present invention has been completed.
因此,本發明的目的,係提供有相對在室溫的飽和磁通密度之在高溫的飽和磁通密度為較大的垂直磁記錄媒體用軟磁性合金、及用以製作該合金的薄膜之濺鍍靶材。 Accordingly, it is an object of the present invention to provide a soft magnetic alloy for a perpendicular magnetic recording medium having a large saturation magnetic flux density at a high temperature with respect to a saturation magnetic flux density at room temperature, and a thin film for forming the alloy. Plating target.
根據本發明之其中一樣態,提供有一種用於垂直磁記錄媒體的軟磁性薄膜層之合金,前述合金為以at%,含有(comprising):1種以上之原子序為57~71之屬於鑭系元素的元素;1種或是2種以上之Y、Ti、Zr、Hf、V、Nb、Ta、B,或/及1種或是2種以上之C、Al、Si、P、Cr、Mn、Ni、Cu、Zn、Ga、Ge、Mo、Sn、W;以及,剩餘部分Co、Fe及不可避免的雜質;較佳為僅由這些元素來實質構成(consisting essentially of);更佳為僅由這些元素來構成(consisting of);全部滿足下述的數學式(1)~(3):(1)0.5≦TLA≦15 According to the same aspect of the present invention, there is provided an alloy for a soft magnetic film layer for a perpendicular magnetic recording medium, wherein the alloy is at%, and contains: one or more atomic orders of 57 to 71 belong to 镧Element of the element; one or more of Y, Ti, Zr, Hf, V, Nb, Ta, B, or / and one or more than two, C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn, W; and, the remaining portions Co, Fe and unavoidable impurities; preferably only consisting of these elements to form essentially; Consisting of only these elements; all satisfy the following mathematical formulas (1) to (3): (1) 0.5 ≦ TLA ≦ 15
(2)5≦TLA+TAM (2) 5≦TLA+TAM
(3)TLA+TAM+TNM≦30(數學式中,TLA為原子序57~71之屬於鑭系元素的元素的添加量之合計%,TAM=Y+Ti+Zr+Hf+V+Nb+Ta+B/2之添加量的合計%(尚且,僅B為1/2倍的值),TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W的添加量的合計%)。 (3) TLA+TAM+TNM≦30 (In the mathematical formula, TLA is the total of the addition amount of the elements belonging to the lanthanoid elements of atomic order 57-71, TAM=Y+Ti+Zr+Hf+V+Nb+ % of the added amount of Ta+B/2 (still, only B is 1/2 times the value), TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo +% of total addition amount of Sn+W).
根據本發明之另一樣態,提供有利用上述合金所構成之軟磁性薄膜層。根據本發明之更進一步另外的樣態,提供有具有上述軟磁性薄膜層之垂直磁記錄媒體。根據本發明之再更進一步另外的樣態,提供有利用上述合金所構成的濺鍍靶材。 According to another aspect of the present invention, a soft magnetic film layer composed of the above alloy is provided. According to still further aspects of the present invention, a perpendicular magnetic recording medium having the above soft magnetic film layer is provided. According to still further aspects of the present invention, a sputtering target composed of the above alloy is provided.
根據這樣的本發明,可以提供有濺鍍靶材,用以製作相對在室溫的Bs的高溫,亦即在使用中裝置暴露在70~150℃左右的高溫之下的Bs的下降幅度小的垂直磁記錄媒體用軟磁性合金、及該合金的薄膜。又,經由使用本發明的合金在垂直磁記錄媒體,充分發揮軟磁性合金具有的磁特性,可以充分提高軟磁性薄膜層的功能,其結果可以提升垂直磁記錄媒體的性能。 According to the present invention, it is possible to provide a sputtering target for producing a high temperature of Bs at room temperature, that is, a small decrease in Bs when the device is exposed to a high temperature of about 70 to 150 ° C during use. A soft magnetic alloy for a perpendicular magnetic recording medium, and a thin film of the alloy. Further, by using the alloy of the present invention to sufficiently exhibit the magnetic properties of the soft magnetic alloy in the perpendicular magnetic recording medium, the function of the soft magnetic film layer can be sufficiently improved, and as a result, the performance of the perpendicular magnetic recording medium can be improved.
以下,詳細說明有關本發明。只要是沒有特別明示,在本說明書中「%」或無單位的數字表示為at%。 Hereinafter, the present invention will be described in detail. As long as it is not specifically stated, the number "%" or no unit in this specification is expressed as at%.
如上述,對有關在垂直磁記錄媒體的軟磁性膜用合金 的室溫下的Bs與其溫度特性,詳細檢討各式各樣的添加元素的結果,在室溫的Bs與從室溫到150℃為止的Bs的下降幅度方面清楚到了有逆相關。但是,添加屬於鑭系元素的話,會出乎該逆相關的關係,比較在室溫具有同等的Bs的合金,清楚到顯然抑制縮小了至150℃為止的Bs下降幅度。 As described above, an alloy for a soft magnetic film in a perpendicular magnetic recording medium The Bs at room temperature and its temperature characteristics were examined in detail for the results of various additions. It is clear that there is an inverse correlation between the Bs at room temperature and the decrease in Bs from room temperature to 150 °C. However, if the addition of a lanthanide element is caused by the inverse correlation, the alloy having the same Bs at room temperature is compared, and it is clear that the decrease in Bs is reduced to 150 ° C.
有關上述現象之詳細的理由不明,推測如下。Bs的溫度特性方面,考慮到交換積分(Je)所影響的話,在結晶質金屬的場合,雖然原理不明,但是因為3d電子軌道與原子間距離,暗示到Je變化的可能性(所謂貝特-斯雷特曲線)。在此,本發明中,看得到改善Bs的溫度特性的效果之屬於鑭系元素之元素,係結晶之原子半徑為1.73~1.99×10-10m的話,相較其他元素顯然較大。因此,添加屬於這些鑭系元素的元素之非晶質合金,係考慮到擴大平均的原子間距離,推測經此呈現出與因結晶質合金之原子間距離增加所致Je增大相同的效果,改善Bs的高溫特性。 The reason for the details of the above phenomenon is unknown, and it is presumed as follows. In terms of the temperature characteristics of Bs, considering the influence of exchange integral (Je), in the case of crystalline metal, although the principle is unknown, the possibility of Je change is suggested because of the distance between 3d electron orbit and atom (so-called Bet- Slater curve). Here, in the present invention, an element belonging to the lanthanoid element in which the effect of improving the temperature characteristics of Bs is observed, and the atomic radius of the crystal is 1.73 to 1.99 × 10 -10 m, which is considerably larger than other elements. Therefore, an amorphous alloy in which an element belonging to these lanthanoid elements is added is considered to have an effect of increasing the average interatomic distance, and it is presumed that the same effect as the increase in the distance between atoms due to the increase in the atomic distance of the crystalline alloy is exhibited. Improve the high temperature characteristics of Bs.
實際上,如圖1之急冷薄帶試料的X射線繞射之例所示,在已添加屬於鑭系元素的元素之情況下,與添加其他的元素的情況相比較,確認到光暈圖(halo pattern)的低角側的斜坡為擴大成平緩的。此為暗示到了因為添加屬於原子半徑大的鑭系元素的元素,非晶質合金的平均原子間距離被擴大。 In fact, as shown in the example of the X-ray diffraction of the quenched ribbon sample of Fig. 1, in the case where an element belonging to the lanthanoid element has been added, the halo pattern is confirmed as compared with the case where other elements are added ( The slope of the low angle side of the halo pattern is expanded to be gentle. This suggests that the average interatomic distance of the amorphous alloy is enlarged by the addition of an element belonging to a lanthanoid element having a large atomic radius.
根據上述的真知灼見,經由本發明所發現到,相對在 室溫的Bs之在高溫的Bs下降幅度為小的非晶質軟磁性合金之特徵與作用,敘述於以下。尚且,所謂原子序為57~71之屬於鑭系元素之元素,指的是La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu。 According to the above-mentioned insights, as discovered by the present invention, The characteristics and effects of a low-temperature Bs drop at a high temperature at a room temperature of a small amorphous soft magnetic alloy are described below. Further, the element belonging to the lanthanoid element having an atomic order of 57 to 71 refers to La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
數學式(1):0.5≦TLA≦15(TLA為原子序57~71之屬於鑭系元素的元素的添加量之合計%) Mathematical formula (1): 0.5 ≦ TLA ≦ 15 (TLA is the total of the addition amount of the element belonging to the lanthanoid element of atomic order 57 to 71)
數學式(2):5≦TLA+TAM(TAM=Y+Ti+Zr+Hf+V+Nb+Ta+B/2之添加量的合計%,尚且,B僅是1/2倍的值。) Mathematical formula (2): Total % of the addition amount of 5 ≦ TLA + TAM (TAM = Y + Ti + Zr + Hf + V + Nb + Ta + B / 2, and B is only 1/2 times the value. )
數學式(3):TLA+TAM+TNM≦30(TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W之添加量的合計%) Mathematical formula (3): TLA + TAM + TNM ≦ 30 (% of total addition amount of TNM = C + Al + Si + P + Cr + Mn + Ni + Cu + Zn + Ga + Ge + Mo + Sn + W)
在本發明合金中,原子序57~71之屬於鑭系元素的元素,係使在室溫的Bs下降、用以抑制在高溫的Bs的下降之必要元素,亦具有非晶質促進效果。又,在結晶質的情況的本發明合金組成的材料中,也有產生與Co及/或Fe之脆性的金屬間化合物。在本發明合金中,Y、Ti、Zr、Hf、V、Nb、Ta、B,係使在室溫的Bs下降,同時具有非晶質促進效果之元素。 In the alloy of the present invention, the element belonging to the lanthanoid element of the atomic sequence 57 to 71 is an essential element for lowering the Bs at room temperature and suppressing the decrease in Bs at a high temperature, and also has an amorphous promoting effect. Further, in the material of the alloy composition of the present invention in the case of crystallinity, there is also an intermetallic compound which generates brittleness with Co and/or Fe. In the alloy of the present invention, Y, Ti, Zr, Hf, V, Nb, Ta, and B are elements which lower the Bs at room temperature and have an amorphous promoting effect.
在本發明合金中,C、Al、Si、P、Cr、Mn、Ni、Cu、Zn、Ga、Ge、Mo、Sn、W,係添加來使在室溫的Bs下降之元素。因此,TLA未滿0.5的話,在高溫的Bs的下 降抑制效果不充分,超過15的話會多產生脆性的金屬間化合物的緣故,為結晶質之該合金組成的濺鍍靶材的機械加工變得很困難。又,TLA+TAM未滿5的話,非晶質促進效果不充分。更進一步,TLA+TAM+TNM超過30的話,在室溫的Bs會過低。尚且,在各數學式的較佳範圍如下述。 In the alloy of the present invention, C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn, and W are elements added to lower the Bs at room temperature. Therefore, if the TLA is less than 0.5, it is under the high temperature Bs. The effect of reducing the suppression is insufficient, and if it exceeds 15, the brittle intermetallic compound is often generated, and it becomes difficult to machine the sputtering target of the crystalline alloy composition. Further, when TLA+TAM is less than 5, the effect of promoting the amorphous property is insufficient. Further, if TLA+TAM+TNM exceeds 30, Bs at room temperature will be too low. Further, the preferred range of each mathematical formula is as follows.
有關數學式(1)較佳的是1≦TLA≦13,更佳為2≦TLA≦11。有關數學式(2)較佳的是6≦TLA+TAM,更佳為7≦TLA+TAM。有關數學式(3)較佳的是TLA+TAM+TNM≦28,更佳為TLA+TAM+TNM≦26。尚且,有關Fe的含有量與合計Fe、Co的含有量之比(以下,記為「Fe%/(Fe%+Co%)」)的範圍是沒有特別限制,但是作為垂直磁記錄媒體的軟磁性膜,多使用超過0為0.90以下者,更多使用0.30以上、0.65以下者。 The mathematical formula (1) is preferably 1≦TLA≦13, more preferably 2≦TLA≦11. The mathematical formula (2) is preferably 6≦TLA+TAM, more preferably 7≦TLA+TAM. The preferred formula (3) is TLA + TAM + TNM ≦ 28, more preferably TLA + TAM + TNM ≦ 26. In addition, the ratio of the content of Fe to the total content of Fe and Co (hereinafter referred to as "Fe% / (Fe% + Co%)") is not particularly limited, but is soft as a perpendicular magnetic recording medium. When the magnetic film is used more than 0 to 0.90 or more, more than 0.30 or more and 0.65 or less are used.
以下,有關本發明藉由實施例具體說明。 Hereinafter, the present invention will be specifically described by way of examples.
通常,垂直磁記錄媒體之軟磁性膜層,係濺鍍與該成分相同的成分之濺鍍靶材,然後成膜在玻璃基板等之上而得。在此利用濺鍍所成膜之薄膜被急冷。相對於此,在以下所示的實驗A及B中,作為供給試驗材料,使用以單輥式的液體急冷裝置所製作出的急冷薄帶。這是實際上針對因利用濺鍍被急冷所成膜之薄膜的成分所致各個特性的影響,簡易地利用液體急冷薄帶來評量。 Usually, a soft magnetic film layer of a perpendicular magnetic recording medium is obtained by sputtering a sputtering target having the same composition as the component, and then forming a film on a glass substrate or the like. Here, the film formed by sputtering is quenched. On the other hand, in the experiments A and B shown below, the quenched ribbon produced by the single-roller liquid quenching apparatus was used as a supply test material. This is actually an effect of various characteristics due to the composition of the film formed by the rapid cooling by sputtering, and is easily evaluated by the liquid quenching.
接著在作為實驗C,實際上製作濺鍍靶材,並施以濺鍍後所製作出的薄膜,並對此評量。有關急冷薄帶的製作條件,把依設定的成分量秤出的原料30g在減壓Ar中電弧熔解到徑10mm深40mm左右的銅鑄模,來作為急冷薄帶的熔解母材。急冷薄帶的製作條件,係以單輥方式,在徑15mm的石英管中設置該熔解母材,設定出液注口(nozzle)的徑為1mm、環境氣壓61kPa、噴霧差壓69kPa、銅輥(徑300mm)的轉速為3000rpm、銅輥與出液注口的間隙0.3mm,進行出液。出液溫度沒有特別限定,出液的時機為各熔解母材完全溶解後馬上進行。如此所製作出的急冷薄帶作為供給試驗材料,評量在室溫與高溫的Bs與非晶質性。 Next, as Experiment C, a sputtering target was actually produced, and a film produced by sputtering was applied and evaluated. In the production conditions of the quenched ribbon, 30 g of the raw material weighed according to the set component amount was arc-melted in a reduced pressure Ar to a copper mold having a diameter of 10 mm and a depth of about 40 mm to obtain a molten base material for the quenched ribbon. The production conditions of the quenched ribbon were set in a single-roller method in a quartz tube having a diameter of 15 mm, and the diameter of the nozzle (nozzle) was set to 1 mm, the ambient pressure was 61 kPa, the spray differential pressure was 69 kPa, and the copper roller was used. The rotation speed of (diameter 300 mm) was 3000 rpm, and the gap between the copper roll and the liquid discharge nozzle was 0.3 mm, and liquid discharge was performed. The liquid discharge temperature is not particularly limited, and the timing of the liquid discharge is performed immediately after the respective molten base materials are completely dissolved. The quenched ribbon thus produced was used as a supply test material, and Bs and amorphous properties at room temperature and high temperature were evaluated.
有關評量急冷薄帶之在室溫的Bs及高溫(150℃)的Bs的下降幅度,以VSM裝置(振動試樣磁力計),施加磁場1200kA/m,測定室溫(30℃)及150℃的Bs。尚且,高溫之Bs的下降幅度,係相對在30℃的Bs之在150℃的Bs的百分比,亦即,以數學式所示,利用(在150℃的Bs)/(在30℃的Bs)×100%來評量。(以下,記為「Bs比」)亦即,該Bs比越接近100%的話,表示從30℃至150℃的Bs的下降幅度越小。 For measuring the drop rate of Bs at room temperature and Bs at high temperature (150 °C), the VSM device (vibration sample magnetometer), applying a magnetic field of 1200 kA/m, measuring room temperature (30 ° C) and 150 °C of B. Furthermore, the decrease in Bs at high temperature is the percentage of Bs at 150 ° C relative to Bs at 30 ° C, that is, as shown in the mathematical formula, using (Bs at 150 ° C) / (Bs at 30 ° C) ×100% to evaluate. (hereinafter, referred to as "Bs ratio"), that is, the closer the Bs ratio is to 100%, the smaller the decrease in Bs from 30 ° C to 150 ° C is.
有關急冷薄帶的非晶質性的評量,通常,測定非晶質材料的X射線繞射圖案,沒有看到繞射峰的話,就是非晶質特有的光暈圖。又,不是完全的非晶質之情況下,看到繞射峰,與結晶材料相比較,波峰高度變低,而且,也 看到光暈圖。在此,以下述的方法評量非晶質性。在玻璃板以雙面膠帶貼上供給試驗材料,以X射線繞射裝置得到繞射圖案。此時,貼上供給試驗材料到玻璃板上使測定面為急冷薄帶的銅輥接觸面。X射線源為Cu-kα射線,掃描速度為4°/min,進行測定。在該繞射圖案可以確認光暈圖的話以○、完全看不到光暈圖的話以×來作為非晶質性的評量。 Regarding the evaluation of the amorphous nature of the quenched ribbon, generally, the X-ray diffraction pattern of the amorphous material is measured, and if the diffraction peak is not seen, it is an amorphous specific halo pattern. Moreover, in the case of not completely amorphous, the diffraction peak is seen, and the peak height is lower than that of the crystalline material, and See the halo map. Here, the amorphous property was evaluated by the following method. The test material was applied to the glass plate by double-sided tape, and a diffraction pattern was obtained by an X-ray diffraction device. At this time, a copper roll contact surface to which the test material was supplied to the glass plate so that the measurement surface was a quenched ribbon was attached. The X-ray source was Cu-kα ray, and the scanning speed was 4°/min, and the measurement was performed. When the haze pattern is confirmed in the diffraction pattern, ○, and if the halo pattern is not seen at all, X is used as the evaluation of the amorphous property.
有關濺鍍靶材的機械加工性的評量,把在設定的成分下所量秤到5kg的母材放到耐燃物坩堝中,在減壓的Ar環境氣體下感應熔解後,使其凝固。坩堝的尺寸,係直徑120mm,高度150mm。從該錠的底部,以車床加工、線切割加工、平面研磨加工,製作出直徑95mm、厚度2mm的濺鍍靶材。利用進行這些加工所產生的缺角或破裂,來評量機械加工性。 Regarding the evaluation of the machinability of the sputtering target, the base material weighed to 5 kg under the set composition was placed in a flame resistant material, and was inductively melted under a decompressed Ar ambient gas, and then solidified. The size of the crucible is 120mm in diameter and 150mm in height. From the bottom of the ingot, a sputtering target having a diameter of 95 mm and a thickness of 2 mm was produced by lathe processing, wire cutting processing, and surface polishing. Machinability is evaluated by the occurrence of cornering or cracking caused by these processes.
有關濺鍍膜的評量,將腔室內的氣壓真空排氣到1×10-4Pa以下,純度為99.9%的Ar氣體投入到氣壓為0.6Pa,進行濺鍍。使薄膜產生在玻璃基板上,為1.5μm的厚度。有關該薄膜試料,與急冷薄帶同樣,結晶Bs及Bs比的結晶構造。首先一開始,選定2種基本組成,各自添加一定量的添加元素,評量有關因添加元素的種類所致在室溫的Bs與Bs比的變化。把該結果,表示作為實驗A及實驗B。實驗A,係作成以Co為39%、Fe為39%、Zr為8%、B為6%、剩餘部分為8%來作為添加元素的合金,評量在添加量為一定之下的添加元素種類的影響。尚 且,No.11並沒有添加元素,乃是Co與Fe、Zr、B為43:43:8:6所配製出來的合金。 Regarding the evaluation of the sputter film, the air pressure in the chamber was evacuated to 1 × 10 -4 Pa or less, and Ar gas having a purity of 99.9% was placed at a pressure of 0.6 Pa to perform sputtering. The film was produced on a glass substrate to a thickness of 1.5 μm. This film sample has a crystal structure of a crystal Bs and a Bs ratio similarly to the quenched ribbon. First, at the beginning, two basic compositions were selected, each adding a certain amount of added elements, and the change in the ratio of Bs to Bs at room temperature due to the type of the added elements was evaluated. The results were shown as Experiment A and Experiment B. In the experiment A, an alloy having an Co of 39%, a Fe of 39%, a Zr of 8%, a B of 6%, and a remaining portion of 8% as an additive element was prepared, and an additive element having a certain addition amount was determined. The impact of the species. Further, No. 11 has no added element, but is an alloy prepared by Co and Fe, Zr, and B of 43:43:8:6.
表1係表示已添加各式各樣的元素之急冷薄帶的各個特性。No.1~10係本發明例,No.11~31係比較例。 Table 1 shows the individual characteristics of the quenched ribbon to which various elements have been added. No. 1 to 10 are examples of the present invention, and Nos. 11 to 31 are comparative examples.
於圖2表示繪製出表1之室溫的Bs與Bs比之圖。由圖2,添加了屬於鑭系元素的元素以外的元素的組成,係大致隨著在室溫的Bs下降Bs比也下降之關係,相對於此,添加了屬於鑭系元素的元素的組成,係明顯看出縱然是在較低的室溫的Bs但是Bs比為高。實驗B,係作成以Co為39.6%、Fe為48.4%、Ti為3%、Zr為2%、Nb為3%、Ta為2%、剩餘部分為2%來作為添加元素的合金,評量在添加量為一定之下的添加元素種類的影響。尚且,No.11並沒有添加元素,乃是Co與Fe、Ti、Zr、Nb、Ta為40.5:49.5:3:2:3:2所配製出來的合金。 Figure 2 shows a plot of the ratio of Bs to Bs at room temperature in Table 1. 2, the composition of an element other than the element belonging to the lanthanoid element is added, and the Bs ratio decreases substantially as the Bs decreases at room temperature. On the other hand, the composition of the element belonging to the lanthanoid element is added. It is evident that the Bs ratio is high even at Bs at lower room temperature. Experiment B, an alloy having an Co of 39.6%, a Fe of 48.4%, a Ti of 3%, a Zr of 2%, a Nb of 3%, a Ta of 2%, and a remaining part of 2% as an additive element was prepared. The effect of the added element type under the added amount is constant. Further, No. 11 has no added element, and is an alloy prepared by Co and Fe, Ti, Zr, Nb, and Ta of 40.5:49.5:3:2:3:2.
表2係表示已添加各式各樣的元素之急冷薄帶的各個特性。No.1~4係本發明例,No.5~14係比較例。 Table 2 shows the individual characteristics of the quenched ribbon to which various elements have been added. No. 1 to 4 are examples of the present invention, and Nos. 5 to 14 are comparative examples.
於圖3表示繪製出表2之室溫的Bs與Bs比之圖。由圖3,添加了屬於鑭系元素的元素以外的元素的組成,係大致隨著在室溫的Bs下降Bs比也下降之關係,相對於此,添加了屬於鑭系元素的元素的組成,係明顯看出縱然是在較低的室溫的Bs但是Bs比為高。 Figure 3 shows a plot of the ratio of Bs to Bs at room temperature in Table 2. 3, the composition of an element other than the element belonging to the lanthanoid element is added, and the Bs ratio decreases substantially as the Bs decreases at room temperature. On the other hand, the composition of the element belonging to the lanthanoid element is added. It is evident that the Bs ratio is high even at Bs at lower room temperature.
經由以上的實驗A、B,在添加了屬於鑭系元素的元素的情況,與添加了其他元素的情況相比較,針對具有同樣程度的Bs之組成,明確得到高Bs比。接著,在各式各 樣的組成中,有關添加了屬於鑭系元素的元素之組成,以及在尚未添加的組成中,具有大致同等的Co及Fe量之10對組成,係製作濺鍍靶材,並實施使用其之濺鍍薄膜之評量(實驗C)。 In the case where the elements belonging to the lanthanoid elements were added by the above experiments A and B, the high Bs ratio was clearly obtained for the composition having the same degree of Bs as compared with the case where the other elements were added. Then, in each In the composition, a composition in which an element belonging to a lanthanoid element is added, and a composition in which the amount of Co and Fe are substantially equal to each other in a composition that has not been added is used, and a sputtering target is produced and used. Evaluation of sputtered film (Experiment C).
尚且,有關實驗C之A~J與a~j,以相對於具有同等的Co及Fe量的組成進行比較的方式,一樣具有大致同等的Fe%/(Fe%+Co%)與在室溫的Bs,藉由含有0.5%以上之屬於鑭系元素的元素或是不含有的方式,確認Bs比的變化。實驗C,係進行各式各樣的組成之在濺鍍膜的室溫的Bs、Bs比、非晶質性的評量。 Moreover, A~J and a~j of Experiment C have approximately the same Fe%/(Fe%+Co%) and room temperature as compared with the composition having the same Co and Fe amount. The Bs confirms the change in the Bs ratio by containing more than 0.5% of the elements belonging to the lanthanoid element or not. In Experiment C, the evaluation of the Bs, Bs ratio, and amorphousness at room temperature of the sputtered film of various compositions was carried out.
表3係表示濺鍍薄膜之各個特性。A~J係本發明例,a~j係比較例。 Table 3 shows the respective characteristics of the sputtered film. A to J are examples of the present invention, and a to j are comparative examples.
在比較例中,把本發明例之屬於鑭系元素的元素(表中的TLA)置換成其他的添加元素。例如,比較例a係取代在本發明例A添加2%的Nd與3%的Gd,添加了5%Zr 之例。如此,經由把TLA置換成其他的添加元素的方式來檢驗TLA的效果。 In the comparative example, the elements belonging to the lanthanoid elements of the present invention (TLA in the table) were replaced with other added elements. For example, Comparative Example a is substituted for adding 2% of Nd and 3% of Gd in Example A of the present invention, and adding 5% Zr. An example. In this way, the effect of the TLA is examined by replacing the TLA with other added elements.
如表4,各自成對的組成,係為大致同等的Co及Fe量,所以在室溫的Bs的差為0.08T以下,很小。另一方面,Bs比,係J與j以外的對中,含有0.5%以上屬於鑭系元素的元素之組成(A~I的試料),比起0.2%以下的組成(a~j的試料),看得出高1~10%。又,A~I及a~i的濺鍍靶材係皆無缺角,為可以加工。 As shown in Table 4, the composition of each pair is substantially equal to the amount of Co and Fe. Therefore, the difference in Bs at room temperature is 0.08 T or less, which is small. On the other hand, in the Bs ratio, the composition other than J and j contains 0.5% or more of the element belonging to the lanthanoid element (sample of A to I), and is composed of a composition of 0.2% or less (a sample of a to j). It can be seen that the height is 1~10%. Moreover, the sputtering targets of A~I and a~i have no corners and can be processed.
尚且,J的試料雖然在機械加工時沒有產生缺角,但是j的試料係製作了3片濺鍍靶材,其中2片破裂無法製作,製作出剩下的1片卻產生缺角。更進一步,j的試料係TLA+TAM+TNM為31,是為較大,所以在室溫的Bs過度低。 Further, although the J sample did not have a missing corner during the machining, the sample of j produced three sputtering targets, two of which could not be produced, and the remaining one produced a missing corner. Further, since the sample T of T is TLA+TAM+TNM of 31, it is large, so Bs at room temperature is excessively low.
〔圖1〕表示急冷條帶製的39%Co-39%Fe-8%Zr-6%B-8%(添加元素)的合金之X射線繞射圖案之圖。 Fig. 1 is a view showing an X-ray diffraction pattern of an alloy of 39% Co-39% Fe-8% Zr-6% B-8% (addition element) made of a quenched strip.
〔圖2〕為繪製出表1之室溫的Bs與Bs比之圖。 [Fig. 2] is a graph showing the ratio of Bs to Bs at room temperature in Table 1.
〔圖3〕為繪製出表2之室溫的Bs與Bs比之圖。 [Fig. 3] is a graph plotting the ratio of Bs to Bs at room temperature in Table 2.
Claims (8)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209856A JP5474902B2 (en) | 2011-09-26 | 2011-09-26 | An alloy used for a soft magnetic thin film layer in a perpendicular magnetic recording medium, a sputtering target material, and a perpendicular magnetic recording medium having a soft magnetic thin film layer. |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201339342A true TW201339342A (en) | 2013-10-01 |
TWI604078B TWI604078B (en) | 2017-11-01 |
Family
ID=47995353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101135292A TWI604078B (en) | 2011-09-26 | 2012-09-26 | Perpendicular magnetic recording medium, soft magnetic film layer alloy, sputtering target, and perpendicular magnetic recording medium having a soft magnetic film layer |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5474902B2 (en) |
MY (1) | MY166858A (en) |
SG (1) | SG11201400805SA (en) |
TW (1) | TWI604078B (en) |
WO (1) | WO2013047321A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6405261B2 (en) * | 2014-05-01 | 2018-10-17 | 山陽特殊製鋼株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
CN104538144B (en) * | 2015-01-17 | 2017-06-09 | 东莞市久星磁性材料有限公司 | A kind of preparation method of the Ni-based soft magnetic materials of Gd2 O3 iron |
JP2020135907A (en) * | 2019-02-18 | 2020-08-31 | 山陽特殊製鋼株式会社 | Spattering target for forming soft magnetic layer of perpendicular magnetic recording medium, and perpendicular magnetic recording medium, and soft magnetic layer thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10214718A (en) * | 1997-01-30 | 1998-08-11 | Minebea Co Ltd | Magnetic recording medium |
JP2002074639A (en) * | 2000-08-24 | 2002-03-15 | Hitachi Ltd | Perpendicular magnetic recording medium and magnetic storage device |
JP2002133635A (en) * | 2000-10-25 | 2002-05-10 | Hitachi Maxell Ltd | Information recording medium and information recording device |
JP2002216333A (en) * | 2001-01-22 | 2002-08-02 | Hitachi Maxell Ltd | Magnetic recording medium and magnetic recording machine |
JP2003317222A (en) * | 2002-04-19 | 2003-11-07 | Hitachi Ltd | Recording medium |
JP2004118977A (en) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | Vertical magnetic recording medium and magnetic recording and reproducing device |
-
2011
- 2011-09-26 JP JP2011209856A patent/JP5474902B2/en not_active Expired - Fee Related
-
2012
- 2012-09-20 MY MYPI2014700683A patent/MY166858A/en unknown
- 2012-09-20 SG SG11201400805SA patent/SG11201400805SA/en unknown
- 2012-09-20 WO PCT/JP2012/074065 patent/WO2013047321A1/en active Application Filing
- 2012-09-26 TW TW101135292A patent/TWI604078B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI604078B (en) | 2017-11-01 |
CN103875035A (en) | 2014-06-18 |
JP2013073635A (en) | 2013-04-22 |
JP5474902B2 (en) | 2014-04-16 |
SG11201400805SA (en) | 2014-08-28 |
WO2013047321A1 (en) | 2013-04-04 |
MY166858A (en) | 2018-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI627286B (en) | CoFe-based alloy for soft magnetic film layer and sputtering target for perpendicular magnetic recording medium | |
TWI512113B (en) | An alloy for a seed layer of a magnetic recording medium, and a sputtering target | |
TWI508114B (en) | A magneto-magnetic recording medium for magnetic recording, a sputtering target, and a magnetic recording medium | |
TWI558831B (en) | An alloy and a sputtering target for a soft magnetic film layer of a vertical magnetic recording medium | |
TWI746540B (en) | Alloy for seed layer of magnetic recording medium, sputtering target material and magnetic recording medium | |
TWI604078B (en) | Perpendicular magnetic recording medium, soft magnetic film layer alloy, sputtering target, and perpendicular magnetic recording medium having a soft magnetic film layer | |
TWI478183B (en) | A magneto-magnetic recording medium for magnetic recording and a sputtering target, and a magnetic recording medium | |
JP5714397B2 (en) | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium | |
JP5631659B2 (en) | Soft magnetic alloy and sputtering target material for perpendicular magnetic recording medium, and magnetic recording medium | |
JP5797398B2 (en) | Ni-based alloy for magnetic recording, sputtering target material, and magnetic recording medium | |
JP5425530B2 (en) | CoFeNi alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium | |
JP6442460B2 (en) | CoFe-based alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium | |
TWI422689B (en) | And an alloy for a soft magnetic film layer of a vertical magnetic recording medium | |
TWI544092B (en) | An alloy for a soft magnetic thin film layer of a vertical magnetic recording medium, and a sputtering target material and a perpendicular magnetic recording medium having a soft magnetic film layer | |
WO2014129423A1 (en) | MAGNETIC RECORDING-USE Cr-ALLOY, SPUTTERING-USE TARGET MATERIAL, AND VERTICAL MAGNETIC RECORDING MEDIUM USING SAME | |
JP2020135907A (en) | Spattering target for forming soft magnetic layer of perpendicular magnetic recording medium, and perpendicular magnetic recording medium, and soft magnetic layer thereof | |
CN107251139B (en) | Alloy for seed layer of Ni-Cu magnetic recording medium, sputtering target material, and magnetic recording medium | |
JP2011181140A (en) | Fe-Co BASED ALLOY SOFT MAGNETIC FILM FOR MAGNETIC RECORDING MEDIUM |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |