CN103875035A - Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer - Google Patents
Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer Download PDFInfo
- Publication number
- CN103875035A CN103875035A CN201280046629.9A CN201280046629A CN103875035A CN 103875035 A CN103875035 A CN 103875035A CN 201280046629 A CN201280046629 A CN 201280046629A CN 103875035 A CN103875035 A CN 103875035A
- Authority
- CN
- China
- Prior art keywords
- alloy
- recording medium
- tla
- magnetic recording
- soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 63
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 41
- 239000000956 alloy Substances 0.000 title claims abstract description 41
- 238000005477 sputtering target Methods 0.000 title claims description 19
- 239000013077 target material Substances 0.000 title claims description 19
- 239000010409 thin film Substances 0.000 title 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 28
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 27
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 8
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 6
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 230000004907 flux Effects 0.000 abstract description 8
- 229910052742 iron Inorganic materials 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000010955 niobium Substances 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 229910001004 magnetic alloy Inorganic materials 0.000 abstract 1
- 239000011572 manganese Substances 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 18
- 238000010791 quenching Methods 0.000 description 13
- 230000000171 quenching effect Effects 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 208000002173 dizziness Diseases 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010079 rubber tapping Methods 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910000846 In alloy Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/005—Ferrous alloys, e.g. steel alloys containing rare earths, i.e. Sc, Y, Lanthanides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Provided is a soft-magnetic alloy for use in a perpendicular magnetic recording medium, said alloy having a high saturation flux density at high temperatures with respect to the saturation flux density thereof at room temperature. Said alloy contains the following: one or more lanthanide elements, which have atomic numbers from 57 to 71; and one or more elements selected from among yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, and boron and/or one or more elements selected from among carbon, aluminum, silicon, phosphorus, chromium, manganese, nickel, copper, zinc, gallium, germanium, molybdenum, tin, and tungsten. The remainder of said alloy comprises cobalt, iron, and unavoidable impurities. The atomic percentages of the constituent elements satisfy each of the following relations: (1) 0.5 <= TLA <= 15, (2) 5 <= TLA+TAM, and (3) TLA+TAM+TNM <= 30, with TLA representing the sum of the atomic percentages of the lanthanide elements, TAM representing Y+Ti+Zr+Hf+V+Nb+Ta+B/2 (with only the atomic percentage of boron halved), and TNM representing C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W.
Description
[cross reference of related application]
The application requires the right of priority of the Japanese patent application No. 2011-209856 submitting on September 26th, 2011, and its full content is combined in this by reference.
[technical field]
The present invention relates to a kind of (Co, Fe)-lanthanide series for the soft magnetic ribbon rete at perpendicular magnetic recording medium and be associated gold, and a kind of sputtering target material.
[background technology]
In Magnetographic Technology, there is marked improvement, owing to the capacity that increases driver, the raising of the recording density in magnetic recording media makes progress, and when with the longitudinal magnetic recording Media Ratio using in the past compared with time obtain the more perpendicular magnetic recording system of high record density and dropped into practical application.Perpendicular magnetic recording system is the system that wherein easy magnetizing axis is orientated in the direction vertical with the dielectric surface of the magnetic film of perpendicular magnetic recording medium, and is the method that is suitable for high record density.For perpendicular magnetic recording system, develop dual-layer recording medium, it has magnetic recording rete and the soft magnetism rete of the recording sensitivity that has raising.For magnetic recording rete, conventionally use CoCrPt-SiO
2be associated gold.
For conventional soft magnetism rete, high saturation magnetic flux density (hereinafter referred to as Bs) and noncrystal property be necessary and, in addition, depend on purposes and their environment of use of perpendicular magnetic recording medium, also need in addition multiple character as highly corrosion resistant and high rigidity.For example, in Japanese Patent Publication publication number 2008-299905 (patent document 1), by adding Fe that high Bs is provided, and provide high rigidity by recording B.In addition,, in Japanese Patent Publication publication number 2011-68985 (patent document 2), by adding Y and Ti, improved corrosion resistance (weatherability).
In recent years, the improvement of the head for read and write in driver and the adjusting of magnetic flux density for the non-retentive alloy of optimizing the exchange coupling magnetic field between soft magnetic film and Ru film have made it possible to write with the lower magnetic flux of the magnetic flux than conventional.Therefore, there is the amorphous alloy of relatively low Bs, instead of as thering are those alloys of high Bs under regular situation, studied for being arranged on the soft ferromagnetic layer under recording layer.In the time as mentioned above low Bs alloy being used for to the soft ferromagnetic layer of perpendicular magnetic recording medium, prevent that the record magnetization in soft magnetic film from excessively producing magnetic influence to environment, to make it possible to record in little space.Because " unclear the writing " of reducing, this phenomenon is considered to be in the obvious improvement in recording density.
[reference listing]
[patent document]
[PTL1] Japanese Patent Publication publication number 2008-299905
[PTL2] Japanese Patent Publication publication number 2011-68985
[summary of the invention]
But, becoming and be clear that, the use in the soft ferromagnetic layer of the amorphous alloy with low Bs as above in perpendicular magnetic recording medium causes new problem.In other words,, in the amorphous alloy with low Bs, owing to temperature rise, the degree that Bs declines is high; Under for example, environment higher than room temperature (, approximately 70 to 150 DEG C) of the temperature being exposed at driver, Bs significantly reduces; And become and can not fully carry out the function as the soft ferromagnetic layer in perpendicular magnetic recording medium.
In order to solve this problem as above, inventor has studied various interpolation elements to the alloy of the soft magnetic film at perpendicular magnetic recording medium in great detail in Bs and the temperature characterisitic of room temperature, and finds to have retrocorrelation at the Bs of room temperature and between the Bs decline degree of room temperature to 150 DEG C.But, found to cause adding of lanthanide series the elimination of this retrocorrelation, and with have in room temperature equate Bs alloy ratio, can be reduced to significantly the degree that the Bs till 150 DEG C declines, thereby and complete the present invention.
Therefore, an object of the present invention is to provide the non-retentive alloy for perpendicular magnetic recording medium, with respect to the saturation magnetic flux density in room temperature, described alloy has high saturation magnetic flux density at high temperature, and is provided for the sputtering target material of the film of preparing this alloy.
According to one embodiment of the invention, provide the alloy using in a kind of soft magnetic ribbon rete in perpendicular magnetic recording medium, wherein
Described alloy comprises by atom %:
One or more have the lanthanide series of 57 to 71 atomicity;
One or more in Y, Ti, Zr, Hf, V, Nb, Ta and B, or/and one or more in C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn and W; With Co, the Fe of surplus, and inevitable impurity, preferably substantially formed by these elements, more preferably formed by these elements; And
Meet the whole of following formula (1) to (3):
(1)0.5≤TLA≤15；
(2) 5≤TLA+TAM; With
(3)TLA+TAM+TNM≤30
(wherein TLA is that described one or more have the total percentage of the addition of the lanthanide series of 57 to 71 atomicity; TAM equals the total percentage of the addition of Y+Ti+Zr+Hf+V+Nb+Ta+B/2, wherein, only for B, uses its value of 1/2; And TNM equals the total percentage of the addition of C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W).
According to another embodiment of the invention, provide a kind of soft magnetic ribbon rete that comprises above-mentioned alloy.According to another embodiment more of the present invention, provide a kind of perpendicular magnetic recording medium that comprises above-mentioned soft magnetic ribbon rete.According to another embodiment more of the present invention, provide a kind of sputtering target material that comprises above-mentioned alloy.
According to the present invention, a kind of non-retentive alloy for perpendicular magnetic recording medium can be provided, with respect to the Bs in room temperature, this alloy is to have low Bs decline degree under the high temperature that is about 70 to 150 DEG C that is in use exposed to of driver at high temperature; And a kind of sputtering target material of the film for the preparation of this alloy.In addition, the function that uses alloy of the present invention to make to bring into play the magnetic characteristic of non-retentive alloy completely and strengthen fully soft magnetic ribbon rete in perpendicular magnetic recording medium, and therefore can cause the raising in the performance of perpendicular magnetic recording medium.
[accompanying drawing summary]
Fig. 1 shows the X-ray diffraction pattern of the alloy of the 39%Co-39%Fe-8%Zr-6%B-8% (interpolation element) that makes quenching zone.
Fig. 2 shows the Bs in room temperature that wherein drawn in table 1 and the figure of Bs ratio.
Fig. 3 shows the Bs in room temperature that wherein drawn in table 2 and the figure of Bs ratio.
[embodiment description]
Describe the present invention below in detail.Unless otherwise mentioned, as used herein " % " or the number without any unit represent atom %.
As mentioned above, study the result of various interpolation elements in great detail in the Bs of room temperature and temperature characterisitic as the alloy of the soft magnetic film to for perpendicular magnetic recording medium, the Bs having found in room temperature and have retrocorrelation between the Bs decline degree of room temperature to 150 DEG C.But, found to cause adding of one or more lanthanide series the elimination of this retrocorrelation, and with there is the alloy phase ratio that equates Bs in room temperature, can be reduced to significantly the Bs decline degree till 150 DEG C.
The detailed reason of above-mentioned phenomenon it be unclear that, but can be presumed as follows.It is believed that the temperature characterisitic of Bs is subject to the impact of exchange integral (Je), and it is suggested, the in the situation that of crystalline metal, can change Je (usually said Bethe-Slater curve) by 3d electron trajectory and interatomic disance, although its principle it be unclear that.The each lanthanide series that shows in the present invention the Bs temperature profile improving has 1.73 to 1.99 × 10 in crystal
-10the atomic radius of m, this radius is greater than the radius of other elements significantly.Therefore.Average atom spacing is considered to add therein in the amorphous alloy of lanthanide series to be increased, and therefore, infers the effect that Je increases that is similar to having produced owing to the increase in crystalline alloy Atom spacing, to improve the hot properties of Bs.
In fact, as show the example of the X-ray diffraction of the quenching carry sample in Fig. 1, with the situation comparison that adds other elements, in the situation that adding lanthanide series, be identified assembly in the substrate of the dizzy pattern (halo pattern) of low angle one side and broaden.This implies by adding the lanthanide series with thick atom radius, has increased the average atom spacing of amorphous alloy.
Narrate characteristic and the effect at high temperature with respect to the Bs in room temperature with the noncrystal non-retentive alloy of low Bs decline found by the present invention based on above-mentioned discovery below.The lanthanide series with 57 to 71 atomicity refers to La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.
(TLA is the total percentage with the addition of the lanthanide series of 57 to 71 atomicity in expression formula (1) 0.5≤TLA≤15.)
(TAM equals the total percentage of the addition of Y+Ti+Zr+Hf+V+Nb+Ta+B/2 to expression formula (2) 5≤TLA+TAM, wherein, only for B, uses its value of 1/2.)
(TNM equals the total percentage of the addition of C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W in expression formula (3) TLA+TAM+TNM≤30.)
In alloy according to the present invention, the lanthanide series with 57 to 71 atomicity is for reducing the Bs in room temperature and is suppressed at the important element that the Bs of high temperature declines, and has noncrystal facilitation effect.The in the situation that of crystalline solid, having according in the material of alloy composition of the present invention, this element is also and Co and/or Fe generate the element of compound between brittle metal.In alloy according to the present invention, Y, Ti, Zr, Hf, V, Nb, Ta and B are the elements that is reduced in the Bs of room temperature and has noncrystal facilitation effect.
In alloy according to the present invention, C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn and W are for reducing the element adding at the Bs of room temperature.Therefore, be less than 0.5 TLA and cause not enough suppressing at high temperature the effect that Bs declines, make to be difficult to the sputtering target material machining with this alloy composition to becoming crystal and be greater than 15 TLA, because produce the intermetallic compound of a large amount of fragility.Further, be less than 5 TLA+TAM and cause inadequate noncrystal facilitation effect.In addition, be greater than 30 TLA+TAM+TNM and cause the Bs too low in room temperature.In addition, the preferable range in each expression formula is as follows.
In expression formula (1), this scope is preferably 1≤TLA≤13, more preferably 2≤TLA≤11.In expression formula (2), this scope is preferably 6≤TLA+TAM, more preferably 7≤TLA+TAM.In expression formula (3), this scope is preferably TLA+TAM+TNM≤28, more preferably TLA+TAM+TNM≤26.In addition, the scope of the ratio of the total content of the content to Fe and Fe and Co (hereinafter referred to as " Fe%/(Fe%+Co%) ") not restriction especially, but, for the soft magnetic film in perpendicular magnetic recording medium, often use the alloy with this ratio in the scope being greater than below 0 and 0.90, and more often use this ratio in the scope having more than 0.30 and below 0.65 those.
[embodiment]
Specifically describe the present invention below with reference to embodiment.
Conventionally, the soft magnetism rete in perpendicular magnetic recording medium is had with the sputtering target material of this rete same composition and is formed to form this rete on glass substrate etc. by sputter.Now, sputtered film is quenched.From this aspect, in following experiment A and B, use the quenching zone of preparing in mono-roller type liquid hardening device as specimen material.This is how in fact the simplified way evaluation that uses liquid hardening band affect various character by the component of the film that quenches by sputter and form.
Afterwards, in experiment C, the actual sputtering target material of preparing, and evaluate by the film making with sputtering target material sputter.The preparation of quenching zone is carried out under the following conditions: wherein, by the starting material that take the 30g for thering is certain ingredients in the Ar of decompression in the copper mold type of the diameter with about 10mm of water-cooled and the degree of depth of about 40mm electric arc melting, the starting material of melting are provided to be provided for quenching zone.The preparation of quenching zone is carried out under the following conditions by single-roller method: wherein the starting material of melting are arranged in the silicon dioxide tube of the diameter with 15mm, and, under the environmental pressure of 61kPa, under the atomisation pressure of 69kPa is poor, and under the revolution of the copper roller (diameter of 300mm) of 3000rpm, gap between copper roller and tapping nozzle is set in the situation of 0.3mm, from having the tapping nozzle tapping of 1mm diameter.Tapping temperature is not limited especially, and the moment after melting is carried out tapping immediately completely at the starting material of each melting.The quenching zone of preparation is used as specimen material to evaluate Bs and the noncrystal character at room temperature and high temperature by this way.
For the evaluation of the degree declining at the Bs of room temperature with at the Bs of high temperature (150 DEG C) in quenching zone, by VSM device (vibrating example type magnetometer), under the magnetic field of the 1200kA/m applying, the Bs measuring room temperature (30 DEG C) and 150 DEG C.In addition, by as the percentage with the Bs at 30 DEG C at the Bs of 150 DEG C as shown in expression formula, i.e. (at the Bs of 150 DEG C)/at the Bs of 30 DEG C) × 100% (hereinafter, it is called as " Bs ratio "), evaluate in high temperature Bs decline degree.In other words, approach 100% Bs than the lower Bs decline degree showing from 30 DEG C to 150 DEG C.
In the evaluation of the noncrystal property of quenching zone, conventionally, in the time measuring the X-ray diffraction pattern of amorphous material, do not observe diffraction peak to show the dizzy especially pattern of amorphous material.Although observe diffraction peak in incomplete non-crystal material, the peak of the aspect ratio crystalline material at this peak is low, and also observes dizzy pattern.Therefore, evaluate by the following method noncrystal property.Specimen material is bonded on glass plate with double faced adhesive tape, to obtain diffraction pattern by X-ray diffraction device.Now, specimen material is bonded on glass, making surface to be measured can be the surface that quenching zone contacts with copper roller.X-ray source is Cu-k alpha ray, and measures and carry out with the sweep velocity of 4 °/minute.For evaluating noncrystal property, wherein in diffraction pattern, can confirm that the situation that has dizzy pattern is confirmed as " good ", and the situation of wherein not observing dizzy pattern is confirmed as " poor ".
In order to evaluate the machining property of sputtering target material, by the starting material that take the 5kg with certain ingredients under the Ar atmosphere of decompression in fire-clay crucible induction fusing and solidifying afterwards.Crucible has the size of diameter 120mm and height 150mm.By the processing of Xuan system, steel wire shearing and surface grinding processing, prepare the sputtering target material of the diameter of 95mm and the thickness of 2mm from the bottom of this ingot casting.Machining property is evaluated in appearance by work in-process breach or cracking.
In order to evaluate sputtered film, chamber interior is evacuated to 1 × 10
-4below Pa, be filled with the Ar gas of 99.9% purity until reach 0.6Pa, and carry out sputter.Film former on glass substrate, to have the thickness of 1.5 μ m.For this film sample, as the quenching zone in the situation that, evaluate Bs, Bs than and crystal structure.First, select two kinds of basic compositions, by the interpolation element of fixed amount add its each in, and evaluate to depend on and add the Bs in room temperature of element kind and the variation of Bs ratio.Result is as shown in experiment A and experiment B.In experiment A, the alloy of the interpolation element of the surplus that preparation comprises 39%Co, 39%Fe, 8%Zr, 6%B and 8%, and evaluate the impact of the kind of the fixing interpolation element of addition.In addition, sequence number 11 is that wherein, Co, Fe, Zr and B were with 43: 43: 8 without any the alloy that adds element: 6 preparations.
[table 1]
Table 1
Note 1: drop on outside scope of the present invention with the numeral of underscore.
Table 1 shows the various character of the quenching zone that adds various elements.Sequence number 1 to 10 is embodiments of the invention, and sequence number 11 to 31 is comparative examples.
The Bs in room temperature that wherein drawn in table 1 and the figure of Bs ratio in Fig. 2, are shown.Fig. 2 has represented the correlativity that the common wherein Bs observing in the composition that adds wherein the element except lanthanide series reduces than the room temperature Bs along with reducing, and adding wherein in the composition of lanthanide series, although the Bs in room temperature is obviously low, Bs is than high.In experiment B, the alloy of the addition element of the surplus that preparation comprises 39.6%Co, 48.4%Fe, 3%Ti, 2%Zr, 3%Nb, 2%Ta and 2%, and evaluate the impact of the kind of the fixing interpolation element of addition.In addition, sequence number 11 is that wherein, Co, Fe, Ti, Zr, Nb and Ta were with 40.5: 49.5: 3 without any the alloy that adds element: preparation in 2: 3: 2.
[table 2]
Table 2
Note 1: drop on outside scope of the present invention with the numeral of underscore.
Table 2 shows the various character of the quenching zone that has added various elements.Sequence number 1 to 4 is embodiments of the invention, and sequence number 5 to 14 is comparative examples.
The Bs in room temperature that wherein drawn in table 2 and the figure of Bs ratio in Fig. 3, are shown.Fig. 3 has represented the wherein Bs conventionally observing in the composition that adds wherein the element except lanthanide series and has compared the correlativity reducing along with the Bs in room temperature reducing, and adding wherein in the composition of lanthanide series, although the Bs in room temperature is obviously low, Bs is than high.
Above-mentioned experiment A and B have shown, with respect to the composition that wherein adds other one or more elements with comparable Bs, add wherein the composition of lanthanide series can obtain high Bs ratio.Afterwards, ten pairs of compositions are prepared to sputtering target material, described composition is to being to add or do not add one or more lanthanide series and have the right of the Co of equivalent and the multiple composition of Fe substantially between every pair, and the sputtered film being formed by these sputtering target materials is evaluated to (experiment C).
In the A to J and a to j of experiment C, to there is relatively having confirmed Bs and whether containing more than 0.5% lanthanide series and change than depending on of the Co of equivalent and the composition of Fe every centering, or even in the situation that Fe%/(Fe%+Co%) and room temperature Bs are substantially equivalent.In experiment C, evaluate room temperature Bs value, Bs ratio and the noncrystal property of the sputtered film with various compositions.
[table 3]
Table 3 shows the various character of sputtered film.A to J is embodiments of the invention, and a to j is comparative example.
In comparative example, the lanthanide series (TLA in table) in the embodiment of the present invention adds element by other and replaces.For example, comparative example a is the 2%Nd that wherein adds 5%Zr to replace to add in embodiment of the present invention A and the example of 3%Gd.By adding with other effect that element replaces TLA research TLA by this way.
[table 4]
Table 4
As shown in table 4, because the composition of each centering has Co and the Fe of equal quantities substantially, the difference between the value of the Bs of room temperature is low to moderate below 0.08T.On the other hand, find the centering except J and j, the Bs of the composition (sample A to I) that contains more than 0.5% lanthanide series than with have the lanthanide series below 0.2% composition (sample a to i) those relatively Bs than high 1-10%.In addition, all sputtering target materials in A to I and a to i can be processed in the situation that not producing breach.
In addition, in sample J, do not occur breach in mechanical processing process, and in sample j, although three sputtering target materials of intention preparation, two in three block of material all cannot make because of cracking, although and remaining one make jagged.In addition, in sample j, too low at the Bs of room temperature, because TLA+TAM+TNM is up to 31.
Claims (8)
1. the alloy using in the soft magnetic ribbon rete in perpendicular magnetic recording medium, wherein
Described alloy comprises by atom %:
One or more have the lanthanide series of 57 to 71 atomicity;
One or more in Y, Ti, Zr, Hf, V, Nb, Ta and B, or/and one or more in C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn and W; With
Co, the Fe of surplus, and inevitable impurity; And
Meet the whole of following formula (1) to (3):
(1)0.5≤TLA≤15；
(2) 5≤TLA+TAM; With
(3)TLA+TAM+TNM≤30
(wherein TLA is that described one or more have the total percentage of the addition of the lanthanide series of 57 to 71 atomicity; TAM equals the total percentage of the addition of Y+Ti+Zr+Hf+V+Nb+Ta+B/2, wherein, only uses its value of 1/2 for B; And TNM equals the total percentage of the addition of C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W).
2. alloy according to claim 1, wherein,
Described alloy is substantially by forming by the following of atom %:
One or more have the lanthanide series of 57 to 71 atomicity;
One or more in Y, Ti, Zr, Hf, V, Nb, Ta and B, or/and one or more in C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn and W; With
Co, the Fe of surplus, and inevitable impurity.
3. alloy according to claim 1, wherein,
Described alloy is by forming by the following of atom %:
One or more have the lanthanide series of 57 to 71 atomicity;
One or more in Y, Ti, Zr, Hf, V, Nb, Ta and B, or/and one or more in C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn and W; With
Co, the Fe of surplus, and inevitable impurity.
4. a soft magnetic ribbon rete, described soft magnetic ribbon rete comprises alloy according to claim 1.
5. a perpendicular magnetic recording medium, described perpendicular magnetic recording medium has soft magnetic ribbon rete according to claim 4.
6. a sputtering target material, described sputtering target material comprises alloy according to claim 1.
7. a soft magnetic ribbon rete, described soft magnetic ribbon rete forms with sputtering target material according to claim 6.
8. a perpendicular magnetic recording medium, described perpendicular magnetic recording medium has soft magnetic ribbon rete according to claim 7.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011209856A JP5474902B2 (en) | 2011-09-26 | 2011-09-26 | An alloy used for a soft magnetic thin film layer in a perpendicular magnetic recording medium, a sputtering target material, and a perpendicular magnetic recording medium having a soft magnetic thin film layer. |
| JP2011-209856 | 2011-09-26 | ||
| PCT/JP2012/074065 WO2013047321A1 (en) | 2011-09-26 | 2012-09-20 | Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103875035A true CN103875035A (en) | 2014-06-18 |
| CN103875035B CN103875035B (en) | 2016-11-30 |
Family
ID=
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10214718A (en) * | 1997-01-30 | 1998-08-11 | Minebea Co Ltd | Magnetic recording medium |
| JP2002133635A (en) * | 2000-10-25 | 2002-05-10 | Hitachi Maxell Ltd | Information recording medium and information recording device |
| JP2003317222A (en) * | 2002-04-19 | 2003-11-07 | Hitachi Ltd | Recording medium |
| CN102149836A (en) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10214718A (en) * | 1997-01-30 | 1998-08-11 | Minebea Co Ltd | Magnetic recording medium |
| JP2002133635A (en) * | 2000-10-25 | 2002-05-10 | Hitachi Maxell Ltd | Information recording medium and information recording device |
| JP2003317222A (en) * | 2002-04-19 | 2003-11-07 | Hitachi Ltd | Recording medium |
| CN102149836A (en) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI604078B (en) | 2017-11-01 |
| JP2013073635A (en) | 2013-04-22 |
| JP5474902B2 (en) | 2014-04-16 |
| SG11201400805SA (en) | 2014-08-28 |
| WO2013047321A1 (en) | 2013-04-04 |
| MY166858A (en) | 2018-07-24 |
| TW201339342A (en) | 2013-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI627286B (en) | CoFe-based alloy for soft magnetic film layer and sputtering target for perpendicular magnetic recording medium | |
| CN103221999B (en) | The inculating crystal layer alloy of magnetic recording media and sputtering target material | |
| TWI508114B (en) | A magneto-magnetic recording medium for magnetic recording, a sputtering target, and a magnetic recording medium | |
| CN101215679A (en) | Nonmagnetic iron-base block amorphous alloy and preparation method thereof | |
| TWI478183B (en) | A magneto-magnetic recording medium for magnetic recording and a sputtering target, and a magnetic recording medium | |
| JP6514654B2 (en) | Magnetic film suitable for magnetic recording medium and method of manufacturing the same | |
| CN103098135B (en) | Magnetic recording media non-retentive alloy, sputtering target material and magnetic recording media | |
| TWI512120B (en) | A magneto-magnetic alloy for magnetic recording, a sputtering target material, and a magnetic recording medium | |
| WO2013047321A1 (en) | Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer | |
| JP5944580B2 (en) | Sputtering target | |
| JP6442460B2 (en) | CoFe-based alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium | |
| TWI544092B (en) | An alloy for a soft magnetic thin film layer of a vertical magnetic recording medium, and a sputtering target material and a perpendicular magnetic recording medium having a soft magnetic film layer | |
| CN103875035B (en) | The alloy used in soft magnetic film layer on perpendicular magnetic recording medium, sputtering target material, and there is the perpendicular magnetic recording medium of soft magnetic film layer | |
| CN107251139B (en) | Alloy for seed layer of Ni-Cu magnetic recording medium, sputtering target material, and magnetic recording medium | |
| JP2020135907A (en) | Spattering target for forming soft magnetic layer of perpendicular magnetic recording medium, and perpendicular magnetic recording medium, and soft magnetic layer thereof | |
| JP2016201441A (en) | R-t-b-based thin film permanent magnet | |
| CN1403618A (en) | Bulk amorphous alloy material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 Termination date: 20200920 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |