TWI544092B - An alloy for a soft magnetic thin film layer of a vertical magnetic recording medium, and a sputtering target material and a perpendicular magnetic recording medium having a soft magnetic film layer - Google Patents
An alloy for a soft magnetic thin film layer of a vertical magnetic recording medium, and a sputtering target material and a perpendicular magnetic recording medium having a soft magnetic film layer Download PDFInfo
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- TWI544092B TWI544092B TW101135542A TW101135542A TWI544092B TW I544092 B TWI544092 B TW I544092B TW 101135542 A TW101135542 A TW 101135542A TW 101135542 A TW101135542 A TW 101135542A TW I544092 B TWI544092 B TW I544092B
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- 230000005291 magnetic effect Effects 0.000 title claims description 76
- 229910045601 alloy Inorganic materials 0.000 title claims description 29
- 239000000956 alloy Substances 0.000 title claims description 29
- 238000005477 sputtering target Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 title description 50
- 239000010409 thin film Substances 0.000 title description 3
- 239000013077 target material Substances 0.000 title 1
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910001004 magnetic alloy Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000740 bleeding effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/008—Ferrous alloys, e.g. steel alloys containing tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/04—Ferrous alloys, e.g. steel alloys containing manganese
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
- C22C38/24—Ferrous alloys, e.g. steel alloys containing chromium with vanadium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
- C22C38/26—Ferrous alloys, e.g. steel alloys containing chromium with niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
- C22C38/28—Ferrous alloys, e.g. steel alloys containing chromium with titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
- C22C38/30—Ferrous alloys, e.g. steel alloys containing chromium with cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Description
該申請，係根據在2011年9月28日申請之日本專利申請2011-212045號案主張優先權之申請案，參閱其整體的揭示內容載入到本說明書中。 The application is based on the priority of Japanese Patent Application No. 2011-212045, filed on Sep. 28, 2011, the entire disclosure of which is hereby incorporated by reference.
本發明，係有關垂直磁記錄媒體之軟磁性薄膜層用合金及濺鍍靶材。 The present invention relates to an alloy for a soft magnetic film layer and a sputtering target for a perpendicular magnetic recording medium.
近年來，磁記錄技術顯著進步，為了裝置的大容量化，早已持續朝磁記錄媒體的高記錄密度化演進，可以實現比以往曾普及過一陣子的縱向磁記錄媒體更高記錄密度的垂直磁記錄方式實用化中。所謂垂直磁記錄方式，乃是針對垂直磁記錄媒體的磁性膜中的媒體面形成易磁化軸配向在垂直方向上之方式，適用在高記錄密度之方法。還有，在垂直磁記錄方式中，具有提高記錄敏感度的磁記錄膜層與軟磁性膜層之2層記錄媒體正在開發中。該磁記錄膜層方面，一般使用CoCrPt-SiO2系合金。 In recent years, the magnetic recording technology has progressed remarkably, and in order to increase the capacity of the device, the high recording density of the magnetic recording medium has been continuously evolved, and the perpendicular magnetic density of the recording density higher than that of the longitudinal magnetic recording medium which has been popularized for a while can be realized. The recording method is practical. The perpendicular magnetic recording method is a method in which the medium surface in the magnetic film of the perpendicular magnetic recording medium is formed such that the easy magnetization axis is aligned in the vertical direction, and is suitable for a high recording density. Further, in the perpendicular magnetic recording method, a two-layer recording medium having a magnetic recording film layer and a soft magnetic film layer for improving recording sensitivity is being developed. As the magnetic recording film layer, a CoCrPt-SiO 2 -based alloy is generally used.
另一方面，在以往的軟磁性膜層方面，高飽和磁通密度(以下，記為Bs)與高非晶質形成能(以下，記為非晶質性)是有必要，更進一步根據垂直磁記錄媒體的用途或使用環境，可以附加要求高耐蝕性、高硬度等各式各樣 的特性。在上述的要求特性中，特別是高Bs是為重要，例如，也在日本特開2008-299905號專利公報(專利文獻1)或日本特開2011-68985號專利公報(專利文獻2)及日本特開2011-99166號專利公報(專利文獻3)中著眼於高Bs，也在任一之實施例為1.1T以上，限於非晶質狀態的話為1.3T以上，所以可以聽聞到實際上在垂直磁記錄媒體中使用作為濺鍍膜之際，大致1.3T以上的Bs是有必要。 On the other hand, in the conventional soft magnetic film layer, high saturation magnetic flux density (hereinafter referred to as Bs) and high amorphous energy formation energy (hereinafter referred to as amorphous property) are necessary, and further according to vertical The use or environment of the magnetic recording medium can be supplemented with various requirements such as high corrosion resistance and high hardness. Characteristics. Among the above-mentioned required characteristics, in particular, high Bs is important, and Japanese Patent Laid-Open Publication No. 2008-299905 (Patent Document 1) or JP-A-2011-68985 (Patent Document 2) and Japan In the patent publication No. 2011-99166 (patent document 3), attention is paid to high Bs, and in any of the examples, it is 1.1 T or more, and when it is limited to the amorphous state, it is 1.3 T or more, so that it is actually heard that the magnetic field is perpendicular. When using a sputtering film as a sputtering film, it is necessary to have a Bs of approximately 1.3T or more.
像這樣要求高Bs的理由，係為了安定化記錄膜的磁化，考慮到了一定值以上的Bs是有必要，且在記錄媒體的平面方向上強烈具有磁向異性(以下，記為平面磁向異性(Hk))。特別是高Hk為減低雜訊之重要的因子，已知一般都是軟磁性膜的Bs高的話，是為較大的值。 In order to stabilize the magnetization of the recording film, it is necessary to consider the magnetization of the recording film in consideration of the above, and it is necessary to have a magnetic anisotropy in the plane direction of the recording medium (hereinafter, it is referred to as planar magnetic anisotropy). (Hk)). In particular, high Hk is an important factor for reducing noise, and it is known that the Bs of a soft magnetic film is generally high, which is a large value.
但是，也是有使用高Bs的軟磁性膜所致的弊病。亦即，在利用寫入用頭而被著磁的狀態下，使用高Bs的軟磁性膜的話，因為磁通密度高的緣故，除了必要之外的周圍廣範圍都被磁影響到，其結果在每單位記錄資訊的寫入必要的空間有必要取得較大，也有難以提高記錄密度之課題。該現象亦被稱為「滲寫」。 However, there are also disadvantages caused by the use of a soft magnetic film of high Bs. In other words, when a soft magnetic film having a high Bs is used in a state where the magnetic head is magnetized by the writing head, since the magnetic flux density is high, the surrounding wide range is affected by the magnetic influence, and the result is affected. It is necessary to obtain a large space necessary for writing information per unit of recording information, and it is difficult to increase the recording density. This phenomenon is also known as "bleeding."
[專利文獻1]日本特開2008-299905號專利公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-299905
[專利文獻2]日本特開2011-68985號專利公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-68985
[專利文獻3]日本特開2011-99166號專利公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-99166
從如上述般之背景，本發明們，雖然具有使記錄膜的磁化安定之最低限度的Bs，但是發現到了既使比較低的Bs也具有高Hk之軟磁性合金，可以兼顧到減低因高Hk所致雜訊、及抑制「滲寫」來得到高記錄密度。因此，為了使Hk增加，檢討高Bs以外的影響因子，發現可以實現軟磁性非晶質合金是為重要。 From the background of the above, the present invention has a minimum Bs for stabilizing the magnetization of the recording film, but it has been found that a soft magnetic alloy having a high Hk even at a relatively low Bs can be considered to reduce the high Hk. Causes noise, and suppresses "bleeding" to obtain high recording density. Therefore, in order to increase the Hk, it is important to review the influence factors other than the high Bs and to realize the soft magnetic amorphous alloy.
在此，並不是如以往般利用高Bs得到高Hk，檢討過對Hk之其他影響因子的結果，推測判定高Bs的溫度特性(高居禮點)為有效，根據該技術思想，以使用低Bs與高Bs的高溫特性的合金的方式，發現到可以兼顧高Hk與減低滲寫，進而完成本發明。 Here, it is not the case that high Hk is obtained by high Bs as in the past, and the results of other influence factors on Hk are reviewed, and it is presumed that it is effective to determine the temperature characteristic of high Bs (high courtesy point), and according to the technical idea, low Bs is used. The method of alloying with high-temperature characteristics of high Bs has found that high Hk and reduced osmosis can be achieved, and the present invention has been completed.
因此，本發明的目的，係提供有表現出在室溫的低飽和磁通密度，同時在高溫該飽和磁通密度的下降為較小的垂直磁記錄媒體用軟磁性合金、及用以製作該合金的薄膜之濺鍍靶材。 Accordingly, an object of the present invention is to provide a soft magnetic alloy for a perpendicular magnetic recording medium which exhibits a low saturation magnetic flux density at room temperature and which has a small decrease in saturation magnetic flux density at a high temperature, and is used for producing the same A sputtering target for a thin film of an alloy.
根據本發明之其中一樣態，提供有一種用於垂直磁記錄媒體內的軟磁性薄膜層之合金，前述合金為以at%，包含(comprising)：1種或是2種以上之Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Ni、Cu、Al、B、C、Si、P、Zn、Ga、Ge、Sn；剩餘部分Co、Fe；以及，不可避免的雜質；較佳為實質上由這些元素來組成(consisting essentially of)；更佳為僅由這些元素來組成(consisting of)；全部滿足下述的數學式(1)~(3)：(1)0≦Fe%/(Fe%+Co%)≦0.5 According to one aspect of the present invention, there is provided an alloy for a soft magnetic film layer in a perpendicular magnetic recording medium, the alloy being at%, including: one or more than Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge, Sn; the remaining part Co, Fe; and, inevitable impurities Preferably, consist essentially of these elements (consisting essentially More) is composed of only these elements (consisting of); all satisfy the following mathematical formulas (1) to (3): (1) 0 ≦ Fe% / (Fe% + Co%) ≦ 0.5
(2)5≦Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2 (2) 5≦Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2
(3)0.3≦0.813×Fe%/(Fe%+Co%)-0.062×TNM+1.751≦1.2(數學式中，Fe%/(Fe%+Co%)為Fe的含量、與合計Fe與Co的含量之比；TNM為Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Ni、Cu、Al、B、C、Si、P、Zn、Ga、Ge、Sn的添加量的合計%，但是，使用B僅為1/2倍的值)。 (3) 0.3≦0.813×Fe%/(Fe%+Co%)-0.062×TNM+1.751≦1.2 (In the mathematical formula, Fe%/(Fe%+Co%) is the content of Fe, and the total Fe and Co Ratio of content; TNM is the addition of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge, Sn The total amount of the amount is, however, the value of B is only 1/2 times).
根據本發明之另一樣態，提供有利用上述合金所構成之軟磁性薄膜層。根據本發明之更進一步另外的樣態，提供有具有上述軟磁性薄膜層之垂直磁記錄媒體。根據本發明之更進一步另外的樣態，提供有利用上述合金所構成的濺鍍靶材。根據本發明之更進一步其他的樣態，提供有利用上述濺鍍靶材所成膜之軟磁性薄膜層。根據本發明之更進一步其他的樣態，提供有具有上述軟磁性薄膜層之垂直磁記錄媒體。 According to another aspect of the present invention, a soft magnetic film layer composed of the above alloy is provided. According to still further aspects of the present invention, a perpendicular magnetic recording medium having the above soft magnetic film layer is provided. According to still further aspects of the present invention, a sputtering target composed of the above alloy is provided. According to still further aspects of the present invention, there is provided a soft magnetic film layer formed by using the above-described sputtering target. According to still further aspects of the present invention, a perpendicular magnetic recording medium having the above soft magnetic film layer is provided.
根據這樣的本發明，可以提供有表現出在室溫的低Bs，同時在高溫中Bs的下降為較小的垂直磁記錄媒體用軟磁性合金、及用以製作該合金的薄膜之濺鍍靶材。經由使用本發明的合金在垂直磁記錄媒體，充分發揮軟磁性合金具有的磁特性，可以充分提高軟磁性薄膜層的功能，其結果可以提升垂直磁記錄媒體的性能。 According to the present invention, it is possible to provide a soft magnetic alloy for a perpendicular magnetic recording medium which exhibits a low Bs at room temperature and a small decrease in Bs at a high temperature, and a sputtering target for a film for forming the alloy. material. By using the alloy of the present invention in the perpendicular magnetic recording medium to sufficiently exhibit the magnetic properties of the soft magnetic alloy, the function of the soft magnetic film layer can be sufficiently improved, and as a result, the performance of the perpendicular magnetic recording medium can be improved.
以下，詳細說明有關本發明。只要是沒有特別明示，在本說明書中「%」表示為at%。 Hereinafter, the present invention will be described in detail. As long as it is not specifically stated, "%" is expressed as at% in this specification.
首先，從濺鍍膜為薄膜開始，在Hk方面去磁磁場(diamagnetic field)的影響大，亦即，預想到去磁因數(demagnetization factor)與磁化的強度的效果高。在此，去磁因數係以薄膜的形狀所決定的外部因子；磁化的強度係相當於軟磁性膜的Bs。因此，如上所述，Hk與軟磁性膜的Bs是有相關的。但是，在這方面的考慮，為了高Hk而高Bs是有必要，變成跟以往的高Bs軟磁性合金的必要性相同。 First, since the sputtering film is a thin film, the influence of the diamagnetic field on Hk is large, that is, the effect of demagnetization factor and magnetization intensity is expected to be high. Here, the demagnetization factor is an external factor determined by the shape of the film; the intensity of magnetization is equivalent to Bs of the soft magnetic film. Therefore, as described above, Hk is correlated with Bs of the soft magnetic film. However, in this regard, it is necessary to increase Bs for high Hk, and it is necessary to be the same as the conventional high-Bs soft magnetic alloy.
在此，進行發現除了Bs外影響到Hk的因子的檢討。在後述的實施例、比較例中，關於若干的軟磁性非晶質合金組成，製作濺鍍膜，評量Hk的結果，如以往所考慮的，以高Bs得到高Hk，但是在一部份的組成中發現到Hk變得極端地小的現象。關於該結果在詳細地解析過後，明瞭到特別是在因濺鍍而成膜時的基板的溫度中，Bs幾乎為零之組成，如上所述Hk變得極端地小。 Here, a review was made to find factors affecting Hk in addition to Bs. In the examples and comparative examples described later, a sputtering film was formed on a certain soft magnetic amorphous alloy composition, and as a result of evaluating Hk, high Hk was obtained at a high Bs as previously considered, but in some cases It was found in the composition that Hk became extremely small. After the detailed analysis, it was revealed that Bs was almost zero in the temperature of the substrate particularly when the film was formed by sputtering, and Hk was extremely small as described above.
由上述，考慮到了不是在以往那樣的室溫的Bs，縮小成膜時的溫度的Bs之從室溫開始的下降幅度是為重要。亦即，適用在室溫的Bs為低，但是在濺鍍成膜時的溫度為約150℃的溫度，從室溫開始的Bs的下降幅度小的合金，暗示到了具有高Hk的同時可以縮小「滲寫」。根 據這樣的思想，檢討在室溫的Bs為0.3~1.2T的話是比以往的軟磁性膜還要低，而且，在相對於室溫的Bs之在150℃的Bs的下降幅度小的合金，完成了本發明。 From the above, it is considered that the Bs at room temperature which is not the conventional one is important, and it is important to reduce the temperature of the Bs at the time of film formation from the room temperature. That is, the Bs applied at room temperature is low, but the temperature at the time of sputtering film formation is about 150 ° C, and the alloy having a small decrease in Bs from the room temperature suggests that it is possible to shrink while having a high Hk. "Infiltration". root According to this idea, when the Bs at room temperature is 0.3 to 1.2 T, it is lower than that of the conventional soft magnetic film, and the alloy having a small decrease in Bs at 150 ° C with respect to room temperature Bs is The present invention has been completed.
尚且，作為評量相對於室溫的Bs之在150℃的Bs的下降幅度的指標，使用了(150℃的Bs)/(室溫的Bs)×100%。亦即，表示該Bs比為越接近100%之較大的值的話，因溫度上升所致Bs的下降幅度越小。以下，簡單記為「Bs比」。 Further, as an index for measuring the decrease in Bs at 150 ° C with respect to Bs at room temperature, (Bs at 150 ° C) / (Bs at room temperature) × 100% was used. That is, when the Bs ratio is a value closer to 100%, the decrease in Bs due to an increase in temperature is smaller. Hereinafter, it is simply referred to as "Bs ratio".
本發明之合金，係滿足數學式(1)：0≦Fe%/(Fe%+Co%)≦0.5。上限值更正確為0.50。在本合金中，Fe及Co係為了使記錄膜的磁化安定，用以維持最低限度之必要的磁化之元素；Bs與Fe%/(Fe%+Co%)的行徑被表現在所謂的斯雷特-鮑林曲線(Slater-Pauling curve)等。本發明中最重要的真知灼見，係發現到以如上述作為高Bs比的方式，在室溫下既使比較低的Bs的軟磁性膜也可以得到高Hk，更進一步經由降低Fe%/(Fe%+Co%)，發現到可以保持高Bs比。 The alloy of the present invention satisfies the mathematical formula (1): 0 ≦ Fe% / (Fe% + Co%) ≦ 0.5. The upper limit is more correctly 0.50. In the present alloy, Fe and Co are elements for maintaining the magnetization of the recording film to maintain the minimum necessary magnetization; the behavior of Bs and Fe%/(Fe%+Co%) is expressed in the so-called Sley Slater-Pauling curve, etc. The most important insight in the present invention is that it is found that a relatively high Bs soft magnetic film can also obtain a high Hk at room temperature as a high Bs ratio as described above, and further reduce Fe%/(Fe). %+Co%), found to be able to maintain a high Bs ratio.
有關具有非晶質構造的本合金之該現象的詳細原因不明，不過是有考慮到與Fe原子與Co原子的3d電子的軌道分布有關。特別是，Fe%/(Fe%+Co%)超過0.5的話，得不到充分的Bs比。尚且，一般在垂直磁記錄媒體中的軟磁性膜之間，事先***薄的Ru膜，利用軟磁性膜與Ru膜的反鐵磁性偶合，具有對硬碟使用環境下之來自外部的弱雜訊磁場之耐受性。因為有使用Fe來改善該反鐵磁性偶 合之情況，含有某種程度的Fe為佳的情況是較多的。但是，因為高Bs比所以減少Fe為佳。因此，Fe%/(Fe%+Co%)之較佳範圍，係超過0%為0.45%以下者，更佳為0.1%以上0.40%以下者。 The detailed reason for this phenomenon of the present alloy having an amorphous structure is unknown, but it is related to the orbital distribution of 3d electrons of Fe atoms and Co atoms. In particular, when Fe%/(Fe%+Co%) exceeds 0.5, a sufficient Bs ratio cannot be obtained. Further, generally, a thin Ru film is inserted between soft magnetic films in a perpendicular magnetic recording medium, and an antiferromagnetic coupling of a soft magnetic film and a Ru film is used, and there is a weak noise from the outside in a hard disk use environment. Magnetic field tolerance. Because there is the use of Fe to improve the antiferromagnetic couple In the case of a combination, it is preferable to contain a certain degree of Fe. However, it is better to reduce Fe because of the high Bs ratio. Therefore, the preferred range of Fe%/(Fe%+Co%) is more than 0% of 0.45% or less, more preferably 0.1% or more and 0.40% or less.
本發明之合金，係滿足數學式(2)：5≦Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2。在本合金中，Ti、Zr、Hf、V、Nb、Ta、B係用以提高非晶質性之元素；這些合計未滿5的話無法得到充分的非晶質性。尚且，使用結晶質的合金的話，遺憾有來自磁記錄媒體所產生的雜訊之原因。但是，B為非晶質促進效果特別高之元素，以其他元素之一半的添加量可以得到同等近似的效果，所以在合計的數學式中，B僅使用1/2的值。為了得到充分的非晶質性，較佳為9%以上，更佳為13%以上。 The alloy of the present invention satisfies the mathematical formula (2): 5≦Ti%+Zr%+Hf%+V%+Nb%+Ta%+B%/2. In the present alloy, Ti, Zr, Hf, V, Nb, Ta, and B are used to improve the amorphous property; when these total amounts are less than 5, sufficient amorphous properties cannot be obtained. Further, when a crystalline alloy is used, there is a fear of noise generated from a magnetic recording medium. However, B is an element having a particularly high amorphous promoting effect, and an effect similar to one-half of the other elements can be obtained. Therefore, in the total mathematical expression, B uses only a value of 1/2. In order to obtain sufficient amorphous properties, it is preferably 9% or more, and more preferably 13% or more.
本發明之合金，係亦滿足數學式(3)：0.3≦0.813×Fe%/(Fe%+Co%)-0.062×TNM+1.751≦1.2。下限值及上限值更正確的話分別為0.30及1.20。在本合金中，Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Ni、Cu、Al、B、C、Si、P、Zn、Ga、Ge、Sn，任一個皆為使Bs減低的元素。本合金系的Bs為大致近似於「0.813×Fe%/(Fe%+Co%)-0.062×TNM+1.751」。尚且，該數學式係在後述的實施例中，把在0≦Fe%/(Fe%+Co%)≦0.50的範圍所得到的Bs，利用Fe%/(Fe%+Co%)與TNM做多元迴歸分析(multiple regression analysis)的結果，是為以高相關係數所得之數學式；以把該數學式的值定在0.3~1.2的範圍 的方式，0.3~1.2T的話，是得到比起以往的軟磁性膜具有比較低的Bs之軟磁性合金。但是，未滿0.3的話無法得到充分的Hk，超過1.2的話會跟以往的高Bs的軟磁性膜同樣，「滲寫」會變大。又，因B所致減低Bs的效果，係因為只要其他元素約一半的緣故，所以算出TNM方面B僅使用1/2的值。尚且，較佳的是0.4~1.1，更佳為0.5~1.0。 The alloy of the present invention also satisfies the formula (3): 0.3 ≦ 0.813 × Fe% / (Fe% + Co%) - 0.062 × TNM + 1.751 ≦ 1.2. If the lower limit value and the upper limit value are more correct, they are 0.30 and 1.20, respectively. In the alloy, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Ni, Cu, Al, B, C, Si, P, Zn, Ga, Ge, Sn, either The element to make Bs lower. The Bs of the alloy system is approximately equal to "0.813 × Fe% / (Fe% + Co%) - 0.062 × TNM + 1.751". Further, this mathematical expression is obtained by using Fe%/(Fe%+Co%) and TNM in the examples described below in the range of 0≦Fe%/(Fe%+Co%)≦0.50. The result of multiple regression analysis is a mathematical formula obtained with a high correlation coefficient; the value of the mathematical formula is set in the range of 0.3 to 1.2. In the case of 0.3 to 1.2 T, a soft magnetic alloy having a relatively low Bs compared to the conventional soft magnetic film is obtained. However, if it is less than 0.3, sufficient Hk cannot be obtained. If it exceeds 1.2, the "bleeding" will become larger as in the case of the conventional high-Bs soft magnetic film. Further, the effect of reducing Bs due to B is because only about half of the other elements are used, so that only the value of 1/2 is calculated for TNM. Further, it is preferably 0.4 to 1.1, more preferably 0.5 to 1.0.
以下，有關本發明藉由實施例具體說明。 Hereinafter, the present invention will be specifically described by way of examples.
於表1表示在組成下利用氣體霧化(gas atomized)法所製作出的合金粉末。熔解母材為25kg，在已減壓的Ar環境氣體中感應熔解，從直徑8mm的注口倒出合金熔液，之後馬上噴霧高壓的Ar氣體做霧化。把該粉末分級到500μm以下，使用作為HIP成形(熱均壓)的原料粉末。HIP成形用柸料，係充填原料粉末到直徑200mm、長度100mm的碳鋼製的罐之後，真空脫氣、密封而製作出的。把充填過該粉末之柸料，以成形溫度為1000℃、壓力為120MPa、保持時間為2小時的條件下進行HIP成形。之後，由成形體製作出直徑95mm、厚度2mm的濺鍍靶材。使用該濺鍍靶材製作出薄膜。 Table 1 shows the alloy powder produced by the gas atomization method under the composition. The molten base material was 25 kg, which was inductively melted in a decompressed Ar ambient gas, and the alloy melt was poured out from a nozzle having a diameter of 8 mm, and then immediately sprayed with a high-pressure Ar gas for atomization. This powder was classified to 500 μm or less, and a raw material powder as HIP forming (heat grading) was used. The HIP forming material was prepared by filling a raw material powder into a carbon steel can having a diameter of 200 mm and a length of 100 mm, and then degassing and sealing by vacuum. The powder filled with the powder was subjected to HIP molding at a molding temperature of 1000 ° C, a pressure of 120 MPa, and a holding time of 2 hours. Thereafter, a sputtering target having a diameter of 95 mm and a thickness of 2 mm was prepared from the molding system. A film was produced using the sputtering target.
將腔室內真空排氣到1×10-4Pa以下，純度為99.99%的Ar氣體投入到氣壓為0.6Pa，進行濺鍍。使薄膜以1.5μm的厚度產生在玻璃基板上。尚且，在濺鍍時，經由 濺鍍氣體的電漿照射，薄膜產生中的基板的溫度達150℃左右。有關該薄膜試料，使用VSM(振動試樣磁力計)測定在室溫(30℃)及在150℃的Bs，評量相對在150℃的Bs之在30℃的Bs的百分比(以下，記為「Bs比」或「(在150℃的Bs)/(在30℃的Bs)×100%」))。 The chamber was evacuated to a volume of 1 × 10 -4 Pa or less, and Ar gas having a purity of 99.99% was placed at a pressure of 0.6 Pa to perform sputtering. The film was produced on the glass substrate at a thickness of 1.5 μm. Further, at the time of sputtering, the temperature of the substrate during film formation is about 150 ° C by irradiation with a plasma of a sputtering gas. Regarding the film sample, the Bs at room temperature (30 ° C) and 150 ° C was measured using a VSM (vibration sample magnetometer), and the percentage of Bs at 30 ° C relative to Bs at 150 ° C was evaluated (hereinafter, "Bs ratio" or "(Bs at 150 °C) / (Bs at 30 °C) × 100%")).
更進一步，針對薄膜面，也測定各自磁化在垂直方向及平面方向上的B-H曲線，關於各自的方向，用以使磁化飽和之必要的施加磁場的差，亦即，把從在垂直方向上之必要的施加磁場減掉在平面方向上之必要的施加磁場的結果，作為因磁化方向所致向異性磁場Hk，進行評量。結晶構造係利用X射線繞射進行評量。X射線源為Cu-kα射線，掃描速度為4°/min，進行測定。在該繞射圖案中，沒看到結晶質的波峰的話給○，看到結晶質的波峰的話給×，來評量結晶構造適當與否。 Further, for the film surface, the BH curves of the respective magnetizations in the vertical direction and the planar direction are also measured, and the difference of the applied magnetic field necessary for saturating the magnetization with respect to the respective directions, that is, from the vertical direction The necessary applied magnetic field subtracts the result of the necessary applied magnetic field in the planar direction as the biasing magnetic field Hk due to the magnetization direction. The crystal structure is evaluated by X-ray diffraction. The X-ray source was Cu-kα ray, and the scanning speed was 4°/min, and the measurement was performed. In the diffraction pattern, when the peak of the crystal is not seen, ○ is given, and when the peak of the crystal is seen, X is given to evaluate whether the crystal structure is appropriate or not.
如表1所示，No.1~22係本發明例，No.23~35係比較例。 As shown in Table 1, No. 1 to 22 are examples of the present invention, and Nos. 23 to 35 are comparative examples.
首先，實施例之數學式(3)「0.813×Fe%/(Fe%+Co%)-0.062×TNM+1.751」的值，係一致表示出室溫的Bs為良好，本數學式為有效，在本數學式的值為0.3~1.2下，比以往的軟磁性膜還要低，確認得到具有0.3~1.2T的Bs的合金。尚且，如比較例No.25、26之Fe%/(Fe%+Co%)為 大，對有關脫離本發明範圍的組成來說，本數學式不為有效。 First, the value of the mathematical formula (3) "0.813 × Fe% / (Fe% + Co%) - 0.062 × TNM + 1.751" of the embodiment is consistently indicating that the Bs at room temperature is good, and the mathematical expression is effective. When the value of the mathematical formula is 0.3 to 1.2, it is lower than that of the conventional soft magnetic film, and it is confirmed that an alloy having a Bs of 0.3 to 1.2 T is obtained. Further, as in Comparative Examples No. 25 and 26, Fe%/(Fe%+Co%) is Large, the mathematical formula is not effective for compositions that depart from the scope of the invention.
接著，本發明例No.7~16，係把Fe%/(Fe%+Co%)固定在0.3的基礎上，把使Bs下降的TNM變化在13~27，使室溫的Bs變化在0.34~1.18之試料。這些試料的Hk係同時與Bs變化，比起以往所知的「以高Bs得到高Hk的現象」，也確認到如本發明那樣未滿1.2T，比以往還低的Bs範圍。 Next, in the present invention Nos. 7 to 16, the Fe%/(Fe%+Co%) was fixed at 0.3, the TNM for lowering the Bs was changed to 13 to 27, and the Bs at room temperature was changed to 0.34. ~1.18 sample. The Hk of these samples was changed to Bs at the same time, and the Bs range which was lower than the conventional one was confirmed as compared with the conventional phenomenon of "high Hk at high Bs".
在此，以本發明例、比較例展示本發明的重點。本發明例No.3、5、6、12、18、21及比較例No.23~29，係顯示出無論哪一個在室溫皆是為0.7T左右的Bs，比以往的軟磁性膜還低。但是，本發明例No.3、5、6、12、18、21的Hk係為550A/m以上，是為較大；相對於此，比較例No.23~29的Hk係90A/m以下，顯著較低，在150℃ Bs幾乎為零之比較例No.26的Hk是極端地低。 Here, the gist of the present invention will be described by way of the present invention and comparative examples. Inventive Examples Nos. 3, 5, 6, 12, 18, 21 and Comparative Examples Nos. 23 to 29 show that Bs, which is about 0.7 T at room temperature, is more than the conventional soft magnetic film. low. However, the Hk of the examples Nos. 3, 5, 6, 12, 18, and 21 of the present invention is 550 A/m or more, which is large, whereas the Hk of the comparative examples No. 23 to 29 is 90 A/m or less. , significantly lower, the Hk of Comparative Example No. 26, which is almost zero at 150 ° C, is extremely low.
更進一步，確認到這些試料的Hk的大小明確是與Fe%/(Fe%+Co%)為逆相關，與Bs比為正相關。有關該現象的理由並無定論，但是，推測薄膜也在濺鍍時受到來自外部的磁場，所以是有影響在150℃前後的溫度下成膜之際的磁化行徑。如此，除了從以往所知的「以高Bs得到高Hk的現象」之外，發現到「以作為大的Bs比得到高Hk」之現象。又，也明白到以設定Fe%/(Fe%+Co%)成較低的方式，得到高Bs比的合金。 Further, it was confirmed that the size of Hk of these samples was clearly inversely related to Fe%/(Fe%+Co%) and positively correlated with Bs ratio. Although the reason for this phenomenon is not conclusive, it is estimated that the film receives a magnetic field from the outside during sputtering, and therefore has a magnetization path that affects film formation at a temperature of about 150 ° C. In this way, in addition to the phenomenon of "high Hk obtained by high Bs", it has been found that "the high Hk is obtained as a large Bs ratio". Further, it is also understood that an alloy having a high Bs ratio is obtained in such a manner that Fe%/(Fe%+Co%) is set to be low.
以下，說明有關各個比較例。比較例No.23~29，係 無論哪一個Fe%/(Fe%+Co%)皆超過0.50的緣故，Bs比為低，Hk為低。比較例No.30~32係非晶質促進元素的合計為低的緣故，確認到了X射線繞射的結果、結晶波峰。比較例No.33係室溫的Bs為低的緣故，Bs比為低，Hk為低。 Hereinafter, each comparative example will be described. Comparative Example No. 23~29, Regardless of which Fe%/(Fe%+Co%) exceeds 0.50, the Bs ratio is low and Hk is low. In Comparative Example No. 30 to 32, the total of the amorphous promoting elements was low, and the result of X-ray diffraction and the crystallization peak were confirmed. In Comparative Example No. 33, the Bs at room temperature was low, the Bs ratio was low, and Hk was low.
更進一步，詳細說明有關比較例No.34、35。使直徑1mm、長度10mm的棒狀鐵氧磁體(ferrite magnet)的端部接觸到本發明例No.7、10、12及比較例No.34、35的薄膜中央後拿掉，在從接觸過鐵氧磁體的位置起算離開10mm的薄膜表面，利用磁強計(gaussmeter)測定殘留磁化，此時，令本發明例No.12的殘留磁化為1.0的話，本發明例No.10為1.2，本發明例No.7為1.5，比較例No.34、35皆為2.5。如此，比較例No.34、35係顯示出在室溫的Bs為高的緣故，拿掉外部磁場後在較廣的範圍受到磁影響，「滲寫」為大。 Further, the comparative examples Nos. 34 and 35 will be described in detail. The end portion of the rod-shaped ferrite magnet having a diameter of 1 mm and a length of 10 mm was brought into contact with the center of the film of the inventive examples Nos. 7, 10, 12 and Comparative Examples Nos. 34 and 35, and then removed. The position of the ferrite magnet was measured from the surface of the film of 10 mm, and the residual magnetization was measured by a gaussmeter. In this case, the residual magnetization of the inventive example No. 12 was 1.0, and the inventive example No. 10 was 1.2. Inventive Example No. 7 was 1.5, and Comparative Examples Nos. 34 and 35 were 2.5. As described above, Comparative Examples Nos. 34 and 35 showed that Bs at room temperature was high, and the magnetic field was affected in a wide range after the external magnetic field was removed, and the "bleeding" was large.
相對於此，本發明例No.1~22，係明白到室溫的Bs為0.3~1.2T，比以往的垂直磁記錄媒體之軟磁性膜還要低，而且，相對於室溫的Bs之150℃的Bs的比例為高的緣故，具有高Hk。 On the other hand, in the inventive examples Nos. 1 to 22, it is understood that the room temperature Bs is 0.3 to 1.2 T, which is lower than that of the conventional perpendicular magnetic recording medium, and Bs with respect to room temperature. The ratio of Bs at 150 ° C is high and has a high Hk.
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| JP6431496B2 (en) * | 2016-04-13 | 2018-11-28 | 山陽特殊製鋼株式会社 | Alloy for seed layer of magnetic recording medium, sputtering target material, and magnetic recording medium |
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| JPH07288207A (en) * | 1994-04-18 | 1995-10-31 | Hitachi Ltd | Soft magnetic thin film and magnetic head using the same |
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