TW201320264A - 製造包含高可靠性晶粒底膠之積體電路系統的方法 - Google Patents

製造包含高可靠性晶粒底膠之積體電路系統的方法 Download PDF

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Publication number
TW201320264A
TW201320264A TW101132956A TW101132956A TW201320264A TW 201320264 A TW201320264 A TW 201320264A TW 101132956 A TW101132956 A TW 101132956A TW 101132956 A TW101132956 A TW 101132956A TW 201320264 A TW201320264 A TW 201320264A
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Prior art keywords
semiconductor substrate
integrated circuit
dicing tape
layer
substrate
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TW101132956A
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English (en)
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TWI590398B (zh
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Myung-Jin Yim
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Globalfoundries Us Inc
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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Abstract

本發明提供一種用於製造包括高可靠性晶粒底膠的積體電路系統的方法，該方法用於製造積體電路系統，其包括在半導體基板中和上製造複數個積體電路。附接間隔開來的焊料凸點到複數個積體電路，焊料凸點電接觸積體電路的元件。提供切塊膠帶，於其上具有底膠材料層，並層壓半導體基板到切塊膠帶，其中底膠材料層填補焊料凸點間的空間。切塊半導體基板和底膠材料層以單切複數個積體電路的個別積體電路，並附接複數個積體電路的個別積體電路之一到如另一個積體電路晶片或印刷電路板的第二基板。

Description

製造包含高可靠性晶粒底膠之積體電路系統的方法
本發明一般涉及用於製造積體電路系統的方法，尤其涉及用於製造具有高可靠性底膠(under-fill)的積體電路系統的方法。
積體電路系統往往包括以堆疊關係附接到其他積體電路(IC)、插板或印刷電路板的積體電路(IC)。IC系統可以包括，例如，互連的微處理器電路、記憶體電路、類比電路、等等，以利用個別電路的獨特屬性。通過垂直堆疊系統元件，可以最小化系統的大小或覆蓋面積(footprint)。
積體電路系統包括至少一個IC晶粒(die)，其通過回流焊料凸點(solder bump)而黏合到另一個基板，以同時提供晶粒與基板間的物理附接和晶粒與基板上的金屬墊間的電接觸。晶粒與基板間的空間必須以底膠材料填充以保護IC的表面並隔絕污染物。在先進的技術中，因為所涉及的複雜拓撲(topology)、焊料凸點間的精細間距、和連接的結構間的窄縫的緣故，很難妥善填充晶粒和基板間的空間。
因此，希望提供用於製造包括可靠底膠製程的積體電路系統的方法。此外，希望提供用於製造IC系統的方法，該系統與臨時黏合/脫黏、晶圓級底膠、和IC晶片切塊(dicing)和單切(singulation)相容。此外，自隨後的詳細說明和所附的申請專利範圍，結合附圖、上述技術領域和背景技術，本發明的其他可取的特點和特徵將變得明顯。
提供一種用於製造積體電路系統的方法。根據一個實施例，所述方法包括在半導體基板中和上製造複數個積體電路。附接間隔開來的焊料凸點到所述複數個積體電路，所述焊料凸點電接觸所述積體電路的元件。提供切塊膠帶(dioing tape)，於其上具有底膠材料層，並層壓(laminate)所述半導體基板到所述切塊膠帶，其中，所述底膠材料層填補所述焊料凸點間的空間。切塊所述半導體基板和所述底膠材料層以單切所述複數個積體電路的個別積體電路，並附接所述複數個積體電路的所述個別積體電路之一到如另一個積體電路晶片或印刷電路板的第二基板。
根據另一個實施例，所述方法包括在半導體基板中和上製造積體電路。製造積體電路包括蝕刻通孔開口(via opening)到所述半導體基板的前表面中並以導電材料填充所述通孔開口來形成穿過基板通孔(through substrate vias，TSV)。黏合所述半導體基板的所述前表面到載體晶圓，並抛光所述半導體基板的背側以暴露出所述導電材料的一部分。在與所述導電材料電接觸的所述背側上形成複 數個焊料凸點。提供切塊膠帶，於其上具有底膠材料層，且層壓所述半導體基板的所述背側到所述切塊膠帶。自所述載體晶圓脫黏所述半導體基板，並將所述半導體基板和所述底膠材料層切塊成個別的積體電路晶片。接著在第二基板上組裝(assemble)所述個別的積體電路晶片和底膠材料。
根據又另一個實施例，所述方法包括在半導體基板中和上製造複數個積體電路，所述積體電路的每一個積體電路包括自前表面朝背表面延伸的複數個金屬填充通孔和在所述前表面上的複數個焊料凸點，每一個與所述複數個金屬填充通孔之一電接觸。黏合所述前表面到載體晶圓，並抛光所述背表面以薄化所述半導體基板並暴露出所述複數個金屬填充通孔的一部分。在與所述複數個金屬填充通孔的暴露部分電接觸的所述背表面上形成重新分佈層(redistribution layer，RDL)，並形成與所述重新分佈層電接觸的複數個背側焊料凸點。提供切塊膠帶，於其上具有底膠材料層，並層壓所述半導體基板的所述背表面到所述切塊膠帶，所述底膠材料填補在背側焊料凸點間的空間。去除所述載體晶圓並切塊所述半導體基板和所述底膠材料層以將所述基板分成複數個個別的積體電路。附接所述複數個個別的積體電路之一到第二基板並加熱以導致所述複數個背側焊料凸點流動並黏接到所述第二基板上的金屬墊。
50、150‧‧‧半導體基板
52‧‧‧虛線區
54、154‧‧‧通孔開口
56、156‧‧‧前表面
58、158‧‧‧導電材料
60、73、160‧‧‧焊料凸點
62‧‧‧載體晶圓
64‧‧‧黏膠層
66‧‧‧背表面
68、92、192‧‧‧虛線
72‧‧‧背側焊料凸點
74、174‧‧‧切塊膠帶
76‧‧‧切塊帶架
78、178‧‧‧底膠材料層、底膠材料
80、100‧‧‧箭頭
82‧‧‧紫外線釋放層
90‧‧‧積體電路晶片或晶粒
94‧‧‧IC晶片
96-1‧‧‧基板、插基板、印刷電路板
96-2‧‧‧基板、積體電路晶片、IC基板
98‧‧‧金屬墊
152‧‧‧IC
182‧‧‧釋放層
此後將結合附圖說明本發明，其中相同的元件符號是 相似的元件，且其中：第1圖至第10圖為根據各種實施例概略繪示用於製造積體電路系統的方法步驟的簡化截面圖；以及第11圖至第12圖為根據替代實施例概略繪示用於製造積體電路系統的方法步驟的簡化截面圖。
下面的詳細描述本質上僅僅是示範，且並無意限制本發明或本發明的應用和用途。此外，本發明必無意受限於在上述技術領域、背景技術、發明內容或以下的詳細說明中所提出的任何明確或隱含的理論。
第1圖至第10圖為根據各種實施例概略繪示用於製造積體電路系統的方法步驟的簡化截面圖。作為本文所用，“積體電路系統”是指黏合到基板的至少一個積體電路(IC)晶片或晶粒，該基板可以是另一個晶片、插層或印刷電路板。雖然沒有說明，IC系統可以包括複數個IC晶片，也許是不同類型的，如微處理器、記憶體、類比或類似，其堆積在一起而形成三維系統。IC和IC系統的製造中的各個步驟都是本領域中的技術人員所熟知，所以為了簡潔，將僅在本文簡要地提及許多傳統的步驟，或將完全省略而不提供衆所周知的製程細節。
如第1圖所示，根據一個實施的方法開始於在半導體基板50中和上製造複數個積體電路。在此簡化截面圖中，由個別的虛線區52簡單表示複數個積體電路。如衆所周知，積體電路一般是長方形的形式且以規律的陣列設置在 半導體基板上，由切割格(scribe grid)將每個IC與下一個分離。作為用於製造IC晶片堆疊陣列的方法的一部分，蝕刻複數個間隔開來的通孔開口54到半導體基板的前表面56中。通孔開口可以有，例如，30至100微米(μm)的深度。以如銅的導電材料58填充通孔開口。填充金屬或其他導電材料的通孔開口會形成穿過基板通孔(TSV)，其提供用於互連複數個晶片和相關基板的有效手段。可在IC製造中的不同時期形成填充通孔，但在沈積和圖案化第一層金屬後形成最方便。雖然沒有說明，IC製造以正常的方式繼續多層金屬、層間介質和之類的形成。複數個間隔開來的焊料凸點60是附接到IC的前表面，其至少一些是與填充通孔中的導電材料電接觸並與IC的元件電接觸。
根據一個實施例，如第2圖所示該方法接著黏合半導體基板的前表面到載體晶圓62。半導體基板50和載體晶圓62通過黏膠層(adhesive layer)64黏合在一起。載體晶圓作為當抛光(例如通過化學機械抛光(Chemical Mechanical Polishing，CMP))半導體基板的背表面66到如第3圖所示的薄化基板時的支撐。在抛光期間，去除由虛線68所示的半導體基板50的部分來暴露出在通孔開口54中的導電材料58的一部分，從而完成了TSV的形成。本領域中的技術人員將會認知到薄化的半導體基板將僅有50至75微米(μm)的厚度，與通孔開口的深度一致，且正是因為此薄度而需使用到載體晶圓62。
根據一個實施例，繼續半導體基板50的現已薄化的背 表面的處理，如第4圖所示。清洗背表面66，且雖然沒有在這個橫斷面圖中顯示，如果對正在實施的IC系統來說有必要的話，可以施加金屬化重新分佈層(RDL)於該表面。RDL，如果使用的話，電接觸TSV的至少一些。間隔開來的背側焊料凸點72是附接到基板的背表面而與RDL和/或TSV電接觸。
如第5圖所示，提供切塊膠帶74，最好是拉伸於切塊帶架76上方。如衆所周知，切塊膠帶典型是高分子材料，其用於在將半導體基板分成個別的IC晶片或晶粒的切塊操作期間和之後將半導體基板的塊保持在一起。施加一底膠材料層78到切塊膠帶的表面。與目前披露的方法相比之下，在傳統加工中，僅在晶片已經附接到基板後才通過毛細管底膠製程來施加底膠材料。底膠材料，正如本領域的技術人員所熟知的，是電性絕緣材料，用來提供IC晶片與IC晶片將如下所解釋般黏合至其之基板間的堅固的機械連接。底膠材料也隔絕了污染物並在晶片與基板間形成熱橋。底膠材料78，最好有等於或大於由箭頭80所示的間隔開來的背側焊料凸點的高度的厚度。底膠材料通常是高分子材料，且只有部分固化，使其在這個處理階段仍然是塑膠。也可在切塊膠帶和底膠材料層間包括紫外線(Ultra Violet，UV)釋放層(release layer)82。
根據一個實施例，該方法接著層壓半導體基板50的背表面66到切塊膠帶74和底膠材料層78，如第6圖中所示。部分固化的底膠材料包圍並填補背側焊料凸點72間的空 間。以和傳統上在無底膠材料層的情況下會進行的同樣的方式來完成層壓。
如第7圖所示，一旦半導體基板50層壓到切塊膠帶74和底膠材料層78，半導體基板可自載體晶圓62脫黏，因為現在由切塊膠帶和切塊膠帶架支撐薄化的基板。在去除載體晶圓62後，自半導體基板的前表面去除黏膠層64(由箭頭65表示後續的黏膠去除)並徹底清洗表面。
在清洗半導體基板50的表面後，可將基板切塊成個別的積體電路晶片或晶粒90，如第8圖所示。可通過割鋸、劃片或沿個別IC晶片間的劃線(如虛線92所示)雷射切割來切塊半導體基板。切塊操作切穿半導體基板、底膠材料層78並到切塊膠帶74。雖然在簡化截面圖只在半導體基板的前面上顯示兩個焊料凸點60且只在背側上顯示兩個背側焊料凸點72，在實際操作中，可視實施設計的積體電路的需要使用任何數量的焊料凸點，通常是數百個，無論是前側或背側。
如第9圖中所示，該方法接著自切塊膠帶單切並去除如IC晶片94的個別積體電路晶片。可例如通過機器人控制的拾取和放置設備去除個別的晶片。如果已納入紫外線釋放層82到底膠材料層下方的結構，可通過最好自背側以UV輻射輻照切塊膠帶，而自切塊膠帶釋放個別的IC晶片來加以去除。UV輻射使底膠材料自切塊膠帶釋放。在自切塊膠帶釋放後，IC晶片94包括具有焊料凸點在表面上的完成積體電路，焊料凸點72封閉在部分固化的底膠材料 78中。
IC晶片94是附接到另一個基板96-1或96-2(統稱基板96)以完成積體電路系統，如第10圖中所示。基板96可以是插基板或印刷電路板96-1，如第10A圖中所示，或另一個積體電路晶片96-2，如第10B圖中所示。IC晶片94可以單獨使用在IC系統中或可以是組裝在一起而形成系統的複數個IC晶片之一。可以附接複數個IC晶片到相同的插基板或印刷電路板和/或複數個IC晶片可在三維堆疊中一個疊著一個地堆疊形成IC系統。
IC晶片94是通過對準背側焊料凸點72與如第10A圖中的基板96-1上的金屬墊98或通過對準焊料凸點72與如第10B圖中的IC基板96-2的表面上的金屬墊98(未顯示)或焊料凸點73而附接到基板96。焊料凸點是通過加熱焊料並導致其流動而電連接到金屬墊98或到焊料凸點93。焊料凸點較佳通過熱壓縮(Thermal-Compression，TC)黏合製程連接到金屬墊或焊料凸點73。在TC黏合製程中，使焊料流動所需的熱量是與壓縮力合併。當IC晶片定位在基板96上方且焊料凸點如由箭頭100所表示壓對著金屬墊或焊料凸點73時，在焊料凸點下方的部分固化的底膠材料會變形，而允許焊料凸點和金屬墊或焊料凸點73間的接觸。在黏合後，加熱底膠材料78以完全固化材料，而在焊料凸點連結周圍形成保護層並機械固定IC晶片到基板。
雖未顯示，但如上述般製造和組裝的複數個IC晶片的三維堆疊也可以是覆晶式(flip chip)黏合到如印刷電路板 的基板來完成三維IC系統。在複數個IC晶片之一的前面上的焊料凸點60可以和之前對於背側焊料凸點所述的相同方式附接到基板上的導電墊。
層壓半導體基板的背表面到以底膠材料層所覆蓋的切塊膠帶的上述方法也可以應用到覆晶式黏合具有焊料凸點的積體電路的前表面到另一個基板，如第11圖和第12圖中所示。在半導體基板150中和上製造IC 152，包括焊料凸點160到和部分IC電接觸的前表面156的附接，如第11圖中所示。在一些實施例中，積體電路可能還包括自充滿導電材料158的通孔開口154所形成的TSV。
半導體基板的前表面是層壓到切塊膠帶174，其上已設置有底膠材料層178，如第12圖中所示。根據一個實施例，釋放層182是設置在切塊膠帶和底膠材料層間。半導體基板，不論經薄化與否，可以是沿劃線切塊來分開複數個IC，如虛線192所示。
在切塊後，可以於上相關於第9圖和第10圖所述的相同方式自切塊膠帶單切並去除個別的IC。拾取和放置設備可以自切塊膠帶去除個別的晶片並將它們定位在印製電路板上的導電黏合墊上方。較佳通過熱壓縮黏合製程加熱焊料凸點，使焊料流動並連接焊料凸點到導電墊。如上述般固化底膠材料來完成該製程。
雖然已在上述詳細說明中提出至少一個示範實施例，可認知到存在有廣大數量的變化。也應該認知到示範實施例僅是例子，不是為了以任何方式限制本發明的範圍、適 用性或配置。更確切地，上述詳細說明將提供在本領域的技術人員實施示範實施例的一個方便導引。應瞭解到可做出元件功能和排列的各種變化，而不背離在所附的申請專利範圍中所提出的本發明的範圍和其法律等效者。
理由：須用整個圖式[第10A圖及第10B圖]才能顯示完整技術特徵。
58‧‧‧導電材料
60、73‧‧‧焊料凸點
72‧‧‧背側焊料凸點
78‧‧‧底膠材料層、底膠材料
94‧‧‧IC晶片
96-1‧‧‧基板、插基板、印刷電路板
96-2‧‧‧基板、積體電路晶片、IC基板
98‧‧‧金屬墊
100‧‧‧箭頭

Claims (20)

  1. 一種製造積體電路系統的方法，包含：在半導體基板中和上製造複數個積體電路；將間隔開來的焊料凸點附接到該複數個積體電路，該焊料凸點電接觸該積體電路的元件；提供切塊膠帶，於其上具有底膠材料層；層壓該半導體基板到該切塊膠帶，其中，該底膠材料層填補該焊料凸點間的空間；切塊該半導體基板和該底膠材料層，以單切該複數個積體電路的個別積體電路；以及將該複數個積體電路的該個別積體電路之一附接到第二基板。
  2. 如申請專利範圍第1項所述之方法，其中，提供切塊膠帶包含提供於其上具有底膠材料層的切塊膠帶，該底膠材料層具有等於或大於該間隔開來的焊料凸點之高度的厚度。
  3. 如申請專利範圍第1項所述之方法，其中，提供切塊膠帶包含提供具有在該底膠材料層下方的紫外線釋放層的切塊膠帶。
  4. 如申請專利範圍第3項所述之方法，其中，在切塊該半導體基板和該底膠材料層後，暴露該切塊膠帶到紫外線輻射而使該底膠材料自該切塊膠帶釋放。
  5. 如申請專利範圍第1項所述之方法，進一步包含，在附接該複數個積體電路的該個別積體電路之一到第二 基板後，加熱該複數個積體電路的該一積體電路來固化該底膠材料。
  6. 如申請專利範圍第1項所述之方法，其中，附接該複數個積體電路的該個別積體電路之一到第二基板包含附接該個別積體電路之一到第二積體電路晶片，以形成三維積體電路系統。
  7. 如申請專利範圍第1項所述之方法，其中，該間隔開來的焊料凸點位在該半導體基板的背表面上，且其中，製造複數個積體電路進一步包含形成延伸穿過該半導體基板並電耦合到該間隔開來的焊料凸點的穿過基板通孔。
  8. 如申請專利範圍第7項所述之方法，其中，製造複數個積體電路進一步包含：暫時黏合該半導體基板到載體晶圓；以及在附接該間隔開來的焊料凸點前，薄化該半導體基板。
  9. 如申請專利範圍第8項所述之方法，進一步包含在層壓該半導體基板到該切塊膠帶後，自該載體晶圓脫黏該半導體基板。
  10. 一種製造積體電路系統的方法，包含：在半導體基板中和上製造積體電路，包括蝕刻通孔開口到該半導體基板的前表面中，並以導電材料填充該通孔開口，以形成穿過基板通孔；黏合該半導體基板的該前表面到載體晶圓； 抛光該半導體基板的背側，以暴露出該導電材料的一部分；在與該導電材料電接觸的該背側上形成複數個焊料凸點；提供切塊膠帶，於其上具有底膠材料層；層壓該半導體基板的該背側到該切塊膠帶；自該載體晶圓脫黏該半導體基板；將該半導體基板和該底膠材料層切塊成個別的積體電路晶片；以及在第二基板上組裝該個別的積體電路晶片和底膠材料。
  11. 如申請專利範圍第10項所述之方法，進一步包含在形成該複數個焊料凸點前，在該半導體基板的該背側上形成重新分佈層，該重新分佈層電耦合於該導電材料與該複數個焊料凸點間。
  12. 如申請專利範圍第10項所述之方法，其中，提供切塊膠帶包含提供具有在該切塊膠帶與該底膠材料層間的紫外線釋放層的切塊膠帶。
  13. 如申請專利範圍第12項所述之方法，進一步包含在切塊以自該切塊膠帶釋放該個別的積體電路晶片和該底膠材料的一部分後，以紫外線輻射輻照該切塊膠帶。
  14. 如申請專利範圍第10項所述之方法，其中，在第二基板上組裝該個別的積體電路晶片和底膠材料包含：在第二基板上方定位個別的積體電路晶片； 加熱該個別的積體電路晶片，以使該焊料凸點流動並導致電耦合到該第二基板上的導電墊；以及加熱該底膠材料以固化該底膠材料。
  15. 如申請專利範圍第10項所述之方法，其中，在第二基板上組裝該個別的積體電路晶片和底膠材料包含附接個別的積體電路晶片到第二積體電路晶片而形成三維積體電路系統。
  16. 一種製造積體電路系統的方法，包含：在半導體基板中和上製造複數個積體電路，該積體電路的每一個包括自前表面朝背表面延伸的複數個金屬填充通孔和在該前表面上的複數個焊料凸點，每一個與該複數個金屬填充通孔之一電接觸；黏合該前表面到載體晶圓；抛光該背表面以薄化該半導體基板並暴露出該複數個金屬填充通孔的一部分；在與該複數個金屬填充通孔的暴露部分電接觸的該背表面上形成重新分佈層；形成與該重新分佈層電接觸的複數個背側焊料凸點；提供於其上具有底膠材料層的切塊膠帶；層壓該半導體基板的該背表面到該切塊膠帶，該底膠材料填補在該背側焊料凸點間的空間；去除該載體晶圓；切塊該半導體基板和該底膠材料層，以將該複數 個積體電路分成複數個個別的積體電路；以及附接該複數個個別的積體電路之一到第二基板並加熱，以使該複數個背側焊料凸點流動並黏接到該第二基板上的金屬墊。
  17. 如申請專利範圍第16項所述之方法，其中，附接進一步包含加熱該複數個個別的積體電路的該一積體電路和該底膠材料，以固化該底膠材料。
  18. 如申請專利範圍第16項所述之方法，其中，提供切塊膠帶包含提供於其上具有底膠層的切塊膠帶，該底膠層具有至少等於該背側焊料凸點的高度的厚度。
  19. 如申請專利範圍第16項所述之方法，其中，附接該複數個個別的積體電路之一到第二基板包含附接該複數個個別的積體電路的該一積體電路到第二積體電路晶片，該方法進一步包含以覆晶方式黏合該前表面上的該焊料凸點到印刷電路板。
  20. 如申請專利範圍第16項所述之方法，其中，提供切塊膠帶進一步包含提供具有在該切塊膠帶與該底膠材料層間的紫外線釋放層的切塊膠帶。
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