TW201320225A

TW201320225A - Detachment system and detachment method and computer storage medium

Info

Publication number: TW201320225A
Application number: TW101121924A
Authority: TW
Inventors: Eiji Manabe
Original assignee: Tokyo Electron Ltd
Priority date: 2011-06-20
Filing date: 2012-06-19
Publication date: 2013-05-16
Also published as: WO2012176629A1; JP2013004845A

Abstract

PROBLEM TO BE SOLVED: To properly retain a processed substrate which is detached from a layered substrate, and to properly transport or process the processed substrate. SOLUTION: A detachment system comprises a retaining part (60) which retains the processed wafer (W) in a non-contact state when transporting or processing the processed wafer (W) that is detached from the layered wafer. A plurality of discharge apertures (62) which discharge gas, and a plurality of suction apertures (63) which suck gas, are formed on the retaining surface (61) of the retaining part (60). The plurality of discharge apertures (62) and the plurality of suction apertures (63) are formed on all positions corresponding to the processed wafer that is retained by the retaining part (60). In the detachment system, the retaining part (60) is disposed in: the transporting device that transports the processed wafer (W), the reversing device that reverses the back side of the processed wafer (W), the wafer detaching device that detaches a layered wafer into a processed wafer (W) and a support wafer, the cleaning device that cleans the processed wafer (W), and the inspection device that inspects the processed wafer (W).

Description

剝離系統、剝離方法及電腦記憶媒體 Stripping system, stripping method and computer memory media

本發明係關於將重合基板剝離成被處理基板和支撐基板之剝離系統、使用該剝離系統之剝離方法及電腦記憶媒體。 The present invention relates to a peeling system for peeling a superposed substrate into a substrate to be processed and a supporting substrate, a peeling method using the peeling system, and a computer memory medium.

近年來，在例如半導體裝置之製造過程中，朝向半導體晶圓(以下，稱為「晶圓」)之大口徑化。再者，在安裝等之特定工程中，要求晶圓之薄型化。例如，當將大口徑且薄之晶圓原樣地進行搬運或進行研磨處理之時，則晶圓有可能產生翹曲或破裂之情形。因此，為了補強晶圓，進行在例如支撐基板之晶圓或玻璃基板貼上晶圓。然後，在如此晶圓和支撐基板接合之狀態下，進行晶圓之研磨處理等之規定的處理之後，剝離晶圓和支撐基板。 In recent years, for example, in the manufacturing process of a semiconductor device, the diameter of the semiconductor wafer (hereinafter referred to as "wafer") has been increased to a large extent. Furthermore, in a specific project such as mounting, the wafer is required to be thinned. For example, when a large-diameter and thin wafer is handled as it is or subjected to a grinding process, the wafer may be warped or broken. Therefore, in order to reinforce the wafer, a wafer is attached to, for example, a wafer or a glass substrate supporting the substrate. Then, after the wafer and the support substrate are bonded to each other, a predetermined process such as a polishing process of the wafer is performed, and then the wafer and the support substrate are peeled off.

如此晶圓和支撐基板之剝離例如使用剝離裝置進行。該剝離裝置具有保持例如晶圓之第1保持器、保持支撐基板之第2保持器及對晶圓和支撐基板之間噴射液體的噴嘴。然後，在該剝離裝置中，藉由從噴嘴以大於該晶圓和支撐基板之間之接合強度的噴射壓，理想為大於接合強度兩倍以上之噴射壓，對接合之晶圓和支撐基板之間，即是晶圓和支撐基板之接合面噴射液體，來進行晶圓和支撐基板之剝離(專利文獻1)。 Such peeling of the wafer and the support substrate is performed, for example, using a peeling device. The peeling device has a first holder that holds, for example, a wafer, a second holder that holds the support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. Then, in the stripping device, by the ejection pressure from the nozzle which is greater than the bonding strength between the wafer and the supporting substrate, it is desirable to be more than twice the bonding strength of the bonding strength, and the bonded wafer and the supporting substrate are In the meantime, the liquid is ejected from the joint surface of the wafer and the support substrate to peel off the wafer and the support substrate (Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開平9-167724號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 9-167724

然而，當晶圓和支撐基板被剝離時，被剝離之晶圓被搬運至特定之處理裝置，再者在該處理裝置中對晶圓進行特定之處理。在該晶圓之搬運或處理中，因回避被形成在晶圓上之特定圖案之裝置之損傷，故以非接觸狀態保持晶圓為佳。 However, when the wafer and the support substrate are peeled off, the stripped wafer is transported to a specific processing device, and the wafer is specifically processed in the processing device. In the handling or processing of the wafer, it is preferable to hold the wafer in a non-contact state by evading the damage of the device formed on the specific pattern on the wafer.

於是，為了保持被剝離之晶圓，使用例如白努利吸盤(Bernoulli chuck)。白努利吸盤係藉由從該吸盤之表面噴出空氣，使晶圓懸浮，以非接觸之狀態吸引晶圓而加以懸吊保持。 Thus, in order to maintain the stripped wafer, for example, a Bernoulli chuck is used. The white Nuo suction cup suspends the wafer by suspending air from the surface of the suction cup, suspending the wafer in a non-contact state, and suspending and holding it.

但是，因在晶圓上形成裝置，而且晶圓被薄型化，故有晶圓之外周部變形之情形。此時，因白努利吸盤之吸引力不足，故有無將外周部變形之晶圓保持水平之情形。如此一來，無法適當地進行晶圓之搬運或對晶圓進行的特定處理。 However, since the device is formed on the wafer and the wafer is thinned, there is a case where the outer peripheral portion of the wafer is deformed. At this time, since the attraction of the Cannino suction cup is insufficient, there is a case where the wafer in which the outer peripheral portion is deformed is maintained at a level. As a result, wafer handling or specific processing of the wafer cannot be performed properly.

本發明係鑒於如此之點而創作出，其目的為適當保持從重合基板被剝離之被處理基板，並適當進行該被處理基板之搬運或處理。 The present invention has been made in view of such a point, and an object thereof is to appropriately hold a substrate to be processed which has been peeled off from a superposed substrate, and to appropriately carry or handle the substrate to be processed.

為了達成上述目的，本發明係將以接著劑接合被處理基板和支撐基板的重合基板剝離成被處理基板和支撐基板的剝離裝置，其特徵為具有：於搬運或處理從重合基板剝離之被處理基板之時，以非接觸狀態保持該被處理基板之保持部，在上述保持部之表面形成有噴出氣體之複數之噴出口和吸引氣體之複數之吸引口。並且，非接觸狀態係指被處理基板和保持部為非接觸之狀態。 In order to achieve the above object, the present invention relates to a peeling apparatus for peeling a superposed substrate of a substrate to be processed and a supporting substrate into a substrate to be processed and a supporting substrate by an adhesive, which is characterized in that it is processed to be handled or processed to be peeled off from the superposed substrate. At the time of the substrate, the holding portion of the substrate to be processed is held in a non-contact state, and a plurality of ejection ports for ejecting gas and a plurality of suction ports for attracting gas are formed on the surface of the holding portion. Further, the non-contact state refers to a state in which the substrate to be processed and the holding portion are in non-contact state.

若藉由本發明時，可以對重合基板剝離之被處理基板，從保持部之噴出口噴出氣體，並且從吸引口吸引氣體。如此一來，在保持部和被處理基板之間，可以形成從噴出口朝向吸引口的氣流。而且，因在保持部之表面形成複數之噴出口和吸引口，故可以形成複數從噴出口朝向吸引口之氣流。藉由該複數之氣流，可以增大保持部對被處理基板之吸引力。即是，可以增大足夠將漂浮狀態之被處理基板保持水平的剛性(漂浮剛性)。因此，即使在例如被薄型化之被處理基板之外周部變形之狀態下，藉由保持部，矯正被處理基板之變形，可以適當保持被處理基板。因此，可以適當地進行如此被保持部保持之被處理基板之搬運或處理。並且，保持部因藉由從噴出口朝向吸引口之氣流，可以以非接觸狀態保持被處理基板，故也可以回避被形成在被處理基板上之裝置受到損傷。 According to the present invention, it is possible to eject the gas from the discharge port of the holding portion to the substrate to be processed from which the superposed substrate is peeled off, and to suck the gas from the suction port. In this way, an air flow from the discharge port toward the suction port can be formed between the holding portion and the substrate to be processed. Further, since a plurality of discharge ports and suction ports are formed on the surface of the holding portion, a plurality of air flows from the discharge port toward the suction port can be formed. By the plurality of air flows, the attraction of the holding portion to the substrate to be processed can be increased. That is, it is possible to increase the rigidity (floating rigidity) sufficient to maintain the horizontally processed substrate to be horizontal. Therefore, even in a state in which the peripheral portion is deformed, for example, in a thinned substrate to be processed, the deformation of the substrate to be processed is corrected by the holding portion, and the substrate to be processed can be appropriately held. Therefore, the conveyance or processing of the substrate to be processed held by the holding portion can be appropriately performed. Further, since the holding portion can hold the substrate to be processed in a non-contact state by the airflow from the discharge port toward the suction port, the device formed on the substrate to be processed can be prevented from being damaged.

上述複數之噴出口和上述複數之吸引口即使各在上述保持部之表面，被形成涵蓋對應於所保持之被處理基板的位置全體上亦可。 The plurality of discharge ports and the plurality of suction ports may be formed on the entire surface of the holding portion so as to cover the entire position corresponding to the substrate to be processed.

即使在上述保持部之外周，設置覆蓋上述保持部和被保持於該保持部之被處理基板之間的間隙的罩蓋亦可。 A cover covering the gap between the holding portion and the substrate to be processed held by the holding portion may be provided on the outer circumference of the holding portion.

即使在上述保持部之外周設置被保持於上述保持部之被處理基板之引導構件亦可。 The guide member of the substrate to be processed held by the holding portion may be provided on the outer circumference of the holding portion.

上述剝離系統即使具有搬運從重合基板被剝離之被處理基板的搬運裝置，且上述搬運裝置具備上述保持部亦可。 The peeling system may have a conveying device that conveys a substrate to be processed which is peeled off from the superposed substrate, and the conveying device may include the holding portion.

上述剝離系統即使具有使從重合基板被剝離之被處理基板之表背面反轉的反轉裝置，且上述反轉裝置具備上述保持部亦可。 The peeling system may have an inverting device that reverses the front and back surfaces of the substrate to be processed from which the superposed substrate is peeled off, and the inverting device may include the holding portion.

上述剝離系統即使具有將重合基板剝離成被處理基板和支撐基板的剝離裝置，且上述剝離裝置具備上述保持部亦可。 The peeling system may have a peeling device that peels the laminated substrate into a substrate to be processed and a supporting substrate, and the peeling device may include the holding portion.

上述剝離系統即使具有洗淨從重合基板被剝離之被處理基板的洗淨裝置，且上述洗淨裝置具備上述保持部亦可。 The peeling system may have a cleaning device that cleans the substrate to be processed that has been peeled off from the overlapped substrate, and the cleaning device may include the holding portion.

上述剝離系統即使具有檢查從重合基板被剝離之被處理基板的檢查裝置，且上述檢查裝置具備上述保持部亦可。 The peeling system may have an inspection device that inspects a substrate to be processed which is peeled off from the superposed substrate, and the inspection device may include the holding portion.

藉由另外觀點之本發明係將以接著劑接合被處理基板和支撐基板之重合基板剝離成被處理基板和支撐基板的剝離方法，於搬運或處理從重合基板被剝離之被處理基板時，對該被處理基板，從形成在保持部之表面的複數之噴出口噴出氣體，並且從形成在該保持部之表面的複數之吸引口吸引氣體，而在上述保持部以非接觸狀態保持被處理基板。 According to another aspect of the invention, a method of peeling a superposed substrate on which a substrate to be processed and a supporting substrate are bonded by an adhesive to a substrate to be processed and a supporting substrate is carried out, and when the substrate to be processed which is peeled off from the superposed substrate is transported or processed, The substrate to be processed ejects gas from a plurality of ejection ports formed on the surface of the holding portion, and sucks from a plurality of surfaces formed on the surface of the holding portion The lead attracts the gas, and the substrate to be processed is held in the non-contact state in the holding portion.

即使在搬運從重合基板被剝離之被處理基板之搬運裝置中，在上述保持部保持該被處理基板亦可。 Even in the conveyance device that conveys the substrate to be processed which is peeled off from the superposed substrate, the substrate to be processed may be held by the holding portion.

即使在使從重合基板被剝離之被處理基板之表背面予以反轉之反轉裝置中，在上述保持部保持該被處理基板亦可。 Even in the inversion apparatus that reverses the front and back surfaces of the substrate to be processed from which the superposed substrate is peeled off, the substrate to be processed may be held by the holding portion.

即使在將重合基板剝離成被處理基板和支撐基板之剝離裝置中，在上述保持部保持該被處理基板亦可。 Even in a peeling apparatus that peels the superposed substrate into a substrate to be processed and a supporting substrate, the substrate to be processed may be held by the holding portion.

即使在洗淨從重合基板被剝離之被處理基板之洗淨裝置中，在上述保持部保持該被處理基板亦可。 In the cleaning apparatus for cleaning the substrate to be processed which is peeled off from the superposed substrate, the substrate to be processed may be held in the holding portion.

即使在檢查從上述重合基板被剝離之被處理基板之檢查裝置中，在上述保持部保持該被處理基板亦可。 In the inspection apparatus for inspecting the substrate to be processed which is peeled off from the above-mentioned superposed substrate, the substrate to be processed may be held by the holding portion.

若藉由另外之觀點的本發明，則提供一種電腦可讀取之記憶媒體，該電腦可讀取之記憶媒體為了藉由剝離系統實行上述剝離方法，儲存有在控制該剝離系統之控制部之電腦上動作之程式。 According to another aspect of the present invention, a computer readable memory medium is provided. The computer readable memory medium is stored in a control unit for controlling the stripping system in order to perform the stripping method by a stripping system. The program of action on the computer.

若藉由本發明，則可以在保持部適當保持從重合基板剝離之被處理基板，並適當進行該被處理基板之搬運或處理。 According to the present invention, the substrate to be processed which is peeled off from the superposed substrate can be appropriately held in the holding portion, and the substrate to be processed can be appropriately transported or disposed. Reason.

以下，針對本發明之實施形態而予以說明。第1圖為表示與本實施形態有關之剝離系統1之構成之概略的俯視圖。 Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing a schematic configuration of a peeling system 1 according to the present embodiment.

在剝離系統1中，如第2圖所示般，將以接著劑G接合當作被處理基板之被處理晶圓W和當作支撐基板之支撐晶圓S的重合基板之重合晶圓T剝離成被處理晶圓W和支撐晶圓S。以下，在被處理晶圓W中，將經接著劑G而與支撐晶圓S接合之面稱為「接合面W_J」，將與該接合面W_J相反側之面稱為「非接合面W_N」。同樣，在支撐晶圓S中，將經接著劑G而與被處理晶圓W接合之面稱為「接合面S_J」，將與該接合面S_J相反側之面稱為「非接合面S_N」。並且，被處理晶圓W為成為製品之晶圓，在例如接合面W_J及非接合面W_N上各形成有複數之裝置。再者，被處理晶圓W係例如非接合面W_N被研磨處理，成為薄型化(例如厚度為50μm~100μm)。支撐晶圓S具有與被處理晶圓W之直徑相同的圓板形狀，為支撐該被處理晶圓W之晶圓。並且，在本實施形態中，雖然針對使用晶圓作為支撐基板之情形予以說明，但是即使使用例如玻璃基板等之其他基板亦可。 In the peeling system 1, as shown in FIG. 2, the superposed wafer T in which the adhesive G is bonded as the substrate W to be processed and the superposed substrate of the supporting wafer S serving as the supporting substrate is peeled off The processed wafer W and the supporting wafer S are formed. Hereinafter, in the wafer W to be processed, a surface joined to the support wafer S via the adhesive G is referred to as a “joining surface W _J ”, and a surface opposite to the bonding surface W _J is referred to as a “non-joining surface”. W _N "". Similarly, in the support wafer S, a surface joined to the wafer W to be processed via the adhesive G is referred to as a "joining surface S _J ", and a surface opposite to the bonding surface S _J is referred to as a "non-joining surface". S _N "". Further, the wafer W to be processed is a wafer to be a product, and a plurality of devices are formed on each of the bonding surface W _J and the non-joining surface W _N , for example. Further, the wafer W to be processed, for example, the non-joining surface W _N is polished and thinned (for example, having a thickness of 50 μm to 100 μm). The support wafer S has a disk shape identical to the diameter of the wafer W to be processed, and is a wafer supporting the wafer W to be processed. Further, in the present embodiment, a case where a wafer is used as a supporting substrate will be described, but other substrates such as a glass substrate may be used.

剝離系統1係如第1圖所示般，具有一體連接下述構件的構成：例如在與外部之間搬入搬出各能夠收容複數被處理晶圓W、複數支撐晶圓S、複數重合晶圓T之卡匣C_W、C_S、C_T的搬入搬出站2；具備對被處理晶圓W、支撐晶圓S、重合晶圓T施予規定之處理之各種處理裝置的剝離處理站3；及在與剝離處理站3鄰接之後處理站4之間進行被處理晶圓W之收授的介面站5。 The peeling system 1 has a configuration in which the following members are integrally connected as shown in Fig. 1 . For example, the plurality of processed wafers W, the plurality of supporting wafers S, and the plurality of overlapping wafers T can be accommodated between the outside and the outside. The loading/unloading station 2 of the cards C _W , C _S , and C _T ; and the peeling processing station 3 including various processing devices for performing the predetermined processing on the processed wafer W, the supporting wafer S, and the superposed wafer T; The interface station 5 that receives the processed wafer W is processed between the processing stations 4 after being adjacent to the stripping processing station 3.

搬入搬出站2和剝離處理站3係排列配置在X方向(第1圖中之上下方向)。在該些搬入搬出站2和剝離處理站3之間形成有晶圓搬運區域6。介面站5係被配置在剝離處理站3之Y方向負方向側(第1圖中之左方向側)。在介面站5之X方向正方向側(第1圖中之上方向側)配置有檢查收授於後處理站4之前的被處理晶圓W之檢查裝置7。再者，夾著介面站5在檢查裝置7之相反側即是介面站5之X方向負方向側(第1圖中之下方向側)，配置有進行檢查後之被處理晶圓W之接合面W_J及非接合面W_N之洗淨，和進行被處理晶圓W之表背面之反轉的檢查後洗淨站8。 The loading/unloading station 2 and the peeling processing station 3 are arranged in the X direction (upward and downward directions in the first drawing). A wafer transfer region 6 is formed between the loading/unloading station 2 and the peeling processing station 3. The interface station 5 is disposed on the negative side in the Y direction of the peeling processing station 3 (the left direction side in FIG. 1). An inspection device 7 that inspects the wafer W to be processed before being sent to the post-processing station 4 is disposed on the positive side (the upper direction side in the first drawing) of the interface station 5 in the X direction. Further, the interface station 5 is placed on the opposite side of the inspection device 7, that is, on the negative side in the X direction of the interface station 5 (the lower side in the first drawing), and the bonded wafer W after inspection is placed. The cleaning of the surface W _J and the non-joining surface W _N and the post-inspection cleaning station 8 for inverting the front and back surfaces of the wafer W to be processed.

在搬入搬出站2設置有卡匣載置台10。在卡匣載置台10上設置有複數例如三個卡閘載置板11。卡匣載置板11係在Y方向(第1圖中之左右方向)排列成一列而配置。在該些卡匣載置板11，於對剝離系統1之外部搬入搬出卡匣C_W、C_S、C_T之時，則可以載置卡匣C_W、C_S、C_T。如此，搬入搬出站2被構成能夠保有複數之被處理晶圓W、複數支撐晶圓S、複數之重合晶圓T。並且，卡匣載置板11之個數並不限定於本實施形態，可以任意決定。再者，對被搬入至搬入搬出站2之複數重合晶圓T進行事先檢查，判別成含有正常之被處理晶圓W的重合晶圓T和具有缺陷之被處理晶圓W的重合晶圓T。 A cassette mounting table 10 is provided at the loading/unloading station 2. A plurality of, for example, three card mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (the horizontal direction in FIG. 1). In the plurality of cassette mounting plate 11, the external release systems in loading and unloading the cassette 1 C _W, when C _S, C _T, the cassette may be placed _{_{_{C W, C S, C T}}} . In this manner, the loading/unloading station 2 is configured to be capable of retaining a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of superposed wafers T. Further, the number of the cassette mounting plates 11 is not limited to this embodiment, and can be arbitrarily determined. Further, the plurality of coincident wafers T loaded into the loading/unloading station 2 are inspected in advance, and the superposed wafer T including the normal processed wafer W and the superposed wafer T having the defective processed wafer W are determined. .

在晶圓搬運區域6配置有第1搬運裝置20。第1搬運裝置20具有在例如垂直方向、水平方向(X方向、Y方向)及繞垂直軸移動自如之搬運臂。第1搬運裝置20係在晶圓搬運區域6內移動，在搬入搬出站2和剝離處理站3之間可以搬運被處理晶圓W、支撐晶圓S、重合晶圓T。 The first conveyance device 20 is disposed in the wafer conveyance region 6. The first conveying device 20 has a transfer arm that is movable in, for example, a vertical direction, a horizontal direction (X direction, a Y direction), and a vertical axis. The first conveyance device 20 moves in the wafer conveyance region 6, and the processed wafer W, the support wafer S, and the superposed wafer T can be conveyed between the loading/unloading station 2 and the peeling processing station 3.

剝離處理站3具有將重合晶圓T剝離成被處理晶圓W和支撐晶圓S的剝離裝置30。在剝離裝置30之Y方向負方向側(第1圖中之左方向側)配置有洗淨被剝離之被處理晶圓W的第1洗淨裝置31。在剝離裝置30和第1洗淨裝置31之間設置第2搬運裝置32。再者，在剝離裝置30之Y方向正方向側(第1圖中之右方向側)配置有洗淨被剝離之支撐晶圓S的第2洗淨裝置33。如此，在剝離處理站3從介面站5側依序配置有第1洗淨裝置31、第2搬運裝置32、剝離裝置30、第2洗淨裝置33。 The peeling processing station 3 has a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. The first cleaning device 31 that cleans the peeled processed wafer W is disposed on the negative side of the Y direction of the peeling device 30 (the left side in the first drawing). The second conveyance device 32 is provided between the peeling device 30 and the first cleaning device 31. In addition, the second cleaning device 33 that washes the peeled supporting wafer S is disposed on the positive side (the right side in the first drawing) of the peeling device 30 in the Y direction. In the peeling processing station 3, the first cleaning device 31, the second transfer device 32, the peeling device 30, and the second cleaning device 33 are sequentially disposed from the interface station 5 side.

在檢查裝置7中，檢查藉由剝離裝置30被剝離之被處理晶圓W上有無接著劑G之殘渣。再者，在檢查後洗淨站8中，洗淨在檢查裝置7確認出接著劑G之殘渣的被處理晶圓W的洗淨。該檢查後洗淨站8具有洗淨被處理晶圓W之接合面W_J的接合面洗淨裝置40、洗淨被處理晶圓W之非接合面W_N的非接合洗淨站裝置41、使被處理晶圓W之表背面上下反轉之反轉裝置42。該些接合面洗淨裝置40、非接合面洗淨裝置41、反轉裝置42係從後處理站4側排列配置在Y方向。 In the inspection device 7, it is checked whether or not the residue of the adhesive G is present on the wafer W to be processed which is peeled off by the peeling device 30. Further, in the post-inspection cleaning station 8, the cleaning of the processed wafer W in which the residue of the adhesive G is confirmed by the inspection device 7 is washed. The post-inspection cleaning station 8 has a bonding surface cleaning device 40 that cleans the bonding surface W _J of the processed wafer W, and a non-joining cleaning station device 41 that cleans the non-joining surface W _N of the processed wafer W, An inverting device 42 that reverses the front and back surfaces of the wafer W to be processed. The joint surface cleaning device 40, the non-joining surface cleaning device 41, and the reversing device 42 are arranged side by side in the Y direction from the post-processing station 4 side.

在介面站5設置有在延伸於Y方向之搬運路50上移動自如的第3搬運裝置51。第3搬運裝置51也在垂直方向及繞垂直軸(θ方向)移動自如，在剝離處理站3、後處理站4、檢查裝置7及檢查後洗淨站8之間可以搬運被處理晶圓W。 The interface station 5 is provided with a third conveyance device 51 that is freely movable on the conveyance path 50 extending in the Y direction. The third conveying device 51 is also movable in the vertical direction and around the vertical axis (θ direction), and the processed wafer W can be transported between the peeling processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. .

並且，在後處理站4中，對在剝離處理站3被剝離之被處理晶圓W進行規定之後處理。就以規定之後處理而言，進行例如安裝被處理晶圓W之處理、進行被處理晶圓W上之裝置之電特性之檢查的處理、對每晶片切割被處理晶圓W之處理等。 Then, in the post-processing station 4, the processed wafer W that has been peeled off at the peeling processing station 3 is subjected to predetermined processing. For the post-scheduled processing, for example, a process of mounting the processed wafer W, a process of performing inspection of electrical characteristics of the device on the processed wafer W, a process of cutting the processed wafer W per wafer, and the like are performed.

在此，在上述剝離系統1中，針對保持從重合晶圓T被剝離之被處理晶圓W的保持部予以說明。該保持部如後述般搬運被處理晶圓W，或者對被處理晶圓W進行特定處理之時，用於以非接觸狀態保持該被處理晶圓W。 Here, in the peeling system 1 described above, a holding portion that holds the wafer W to be processed which is peeled off from the superposed wafer T will be described. The holding portion holds the processed wafer W as described later, or holds the processed wafer W in a non-contact state when the processed wafer W is subjected to specific processing.

如第3圖及第4圖所示般，保持部60在俯視觀看下具有圓形狀，且具有與被處理晶圓W之直徑相同之直徑，或比此更長的直徑。在保持部60之表面，即是保持被處理晶圓W之保持面61，形成有噴出氣體例如空氣之複數之噴出口62，和吸引氣體之複數之吸引口63。複數之噴出口62和複數之吸引口63係被形成在涵蓋對應於被保持於保持部60之被處理晶圓W的位置全部，例如在本實施形態中被形成涵蓋保持面61全面。再者，複數之噴出口62和複數之吸引口63交互配置成格子狀。 As shown in FIGS. 3 and 4, the holding portion 60 has a circular shape in plan view and has a diameter equal to or larger than the diameter of the wafer W to be processed. On the surface of the holding portion 60, that is, the holding surface 61 for holding the wafer W to be processed, a plurality of ejection ports 62 for ejecting a gas such as air, and a plurality of suction ports 63 for attracting gas are formed. The plurality of discharge ports 62 and the plurality of suction ports 63 are formed to cover all of the positions corresponding to the wafer W to be processed held by the holding portion 60. For example, in the present embodiment, the cover surface 61 is formed to cover the entire surface. Furthermore, the plural spray The outlet 62 and the plurality of suction ports 63 are alternately arranged in a lattice shape.

在各噴出口62連接有與供給氣體之氣體供給源64連通之供給管65。再者，在各吸引口63連接有吸引氣體，例如與真空泵等之負壓產生裝置66連通之吸引管67。並且，在圖示之例中，供給管65雖然在厚度方向貫通保持部60，但是即使在保持部60之內部將複數供給管65纏成一根供給管，纏綑的供給管連接於氣體供給源64亦可。同樣，雖然吸引管67也在厚度方向貫通保持部60，但是即使在保持部60之內部將複數吸引管67纏成一根吸引管，纏綑的吸引管連接於負壓產生裝置66亦可。 A supply pipe 65 that communicates with the gas supply source 64 that supplies the gas is connected to each of the discharge ports 62. Further, a suction pipe 67 is connected to each suction port 63, for example, a suction pipe 67 that communicates with a negative pressure generating device 66 such as a vacuum pump. Further, in the illustrated example, the supply pipe 65 penetrates the holding portion 60 in the thickness direction, but the plurality of supply pipes 65 are wound into one supply pipe inside the holding portion 60, and the bundled supply pipe is connected to the gas supply source. 64 is also available. Similarly, although the suction pipe 67 penetrates the holding portion 60 in the thickness direction, even if the plurality of suction pipes 67 are wound into one suction pipe inside the holding portion 60, the bundled suction pipe may be connected to the negative pressure generating device 66.

然後，在保持部60中，對被處理晶圓W，從噴出口62噴出氣體，並且從吸引口63吸引氣體。如此一來，如第3圖及第4圖之箭號所示般，在保持部60和被處理晶圓W之間的間隙D，可以形成從噴出口62朝向吸引口63之氣流F。而且，該些氣流F被形成涵蓋保持面61全面。藉由如此之複數之氣流F，保持部60產生大的吸引力，而可以以非接觸狀態保持被處理晶圓W。即是，可以增大足夠將漂浮狀態之被處理晶圓W保持水平的剛性(漂浮剛性)。再者，藉由使從噴出口62噴出氣體之力和從吸引口63吸引氣體之力平衡，可以將被處理晶圓W和保持部60之間的距離保持在特定之距離，並可以確實維持保持部60和被處理晶圓W之非接觸狀態。 Then, in the holding portion 60, gas is ejected from the ejection port 62 to the wafer W to be processed, and gas is sucked from the suction port 63. As a result, as shown by arrows in FIGS. 3 and 4, the airflow F from the discharge port 62 toward the suction port 63 can be formed in the gap D between the holding portion 60 and the wafer W to be processed. Moreover, the airflows F are formed to cover the entire face 61. With such a plurality of airflows F, the holding portion 60 generates a large attractive force, and the wafer W to be processed can be held in a non-contact state. That is, it is possible to increase the rigidity (floating rigidity) sufficient to keep the wafer W to be processed in a floating state horizontal. Further, by balancing the force of ejecting gas from the discharge port 62 and the force of attracting gas from the suction port 63, the distance between the wafer W to be processed and the holding portion 60 can be maintained at a specific distance, and can be surely maintained. The holding portion 60 and the wafer W to be processed are in a non-contact state.

然而，如上述般因被處理晶圓W薄型化，故有該被處理晶圓W之外周部變形之情形。即使在如此之情形下，藉由保持部60之大吸引力，即是大漂浮剛性，矯正被處理晶圓W之變形，而可以適當保持該被處理晶圓W。 However, as described above, since the wafer W to be processed is made thinner, the outer peripheral portion of the wafer W to be processed is deformed. Even in such a situation Next, the deformation of the wafer W to be processed is corrected by the large attraction force of the holding portion 60, that is, the large floating rigidity, and the wafer W to be processed can be appropriately held.

再者，保持部60因可以非接觸狀態保持被處理晶圓W，故可以迴避該被處理晶圓W上之裝置受到損傷。並且，即使例如在保持部60附著微粒之時，該微粒也不會有附著於被處理晶圓W之情形。 Further, since the holding portion 60 can hold the wafer W to be processed in a non-contact state, the device on the wafer W to be processed can be prevented from being damaged. Further, even when particles are adhered to the holding portion 60, for example, the particles do not adhere to the wafer W to be processed.

並且，在本實施形態中，雖然複數之噴出口62和複數之吸引口63交互配置成格子狀，但是該些之配置或數量可以任意設定。但是，複數之噴出口62和複數之吸引口63被配置成從噴出口62朝向吸引口63之氣流F形成涵蓋保持面61全面為佳。再者，噴出口62之數量和吸引口63之數量相等為佳。 Further, in the present embodiment, the plurality of discharge ports 62 and the plurality of suction ports 63 are alternately arranged in a lattice shape, but the arrangement or the number thereof may be arbitrarily set. However, it is preferable that the plurality of discharge ports 62 and the plurality of suction ports 63 are disposed such that the airflow F from the discharge port 62 toward the suction port 63 covers the holding surface 61. Further, the number of the discharge ports 62 and the number of the suction ports 63 are preferably equal.

並且，在以下之說明中，保持部60雖然依所設置之裝置表示保持部60a~60f，但是該些保持部60a~60f具有與上述保持部60相同之構成。 In the following description, the holding portion 60 indicates the holding portions 60a to 60f according to the installed device, but the holding portions 60a to 60f have the same configuration as the holding portion 60 described above.

接著，針對上述剝離裝置30之構成予以說明。剝離裝置30係如第5圖所示般，在其內部具有收容複數機器的處理容器100。在處理容器100之側面，形成被處理晶圓W、支撐晶圓S、重合晶圓T之搬入搬出口(無圖示)，在該搬入搬出口設置有開關快門(無圖示)。 Next, the configuration of the above-described peeling device 30 will be described. As shown in Fig. 5, the peeling device 30 has a processing container 100 for accommodating a plurality of devices therein. On the side surface of the processing container 100, a processed wafer W, a supporting wafer S, and a loading/unloading port (not shown) of the superposed wafer T are formed, and a switching shutter (not shown) is provided at the loading/unloading port.

在處理容器100之底面，形成有排出該處理容器100之內部之氛圍的排氣口101。在排氣口101連接有例如與真空泵等之排氣裝置102連通之排氣管103。 On the bottom surface of the processing container 100, an exhaust port 101 for discharging the atmosphere inside the processing container 100 is formed. An exhaust pipe 103 that communicates with an exhaust device 102 such as a vacuum pump is connected to the exhaust port 101.

在處理容器100之內部，設置有以下面保持被處理晶圓W之上部吸盤110，和在上面載置支撐晶圓S而予以保持之下部吸盤111。上部吸盤110係被設置在下部吸盤111之上方，配置成與下部吸盤111相向。即是，在處理容器100之內部，在上側配置被處理晶圓W，並且於下側配置支撐晶圓S之狀態下，對重合晶圓T進行剝離處理。 Inside the processing container 100, a suction cup 110 that holds the upper surface of the wafer W to be processed is placed underneath, and a support wafer S is placed thereon to hold the lower suction cup 111. The upper suction cup 110 is disposed above the lower suction cup 111 and disposed to face the lower suction cup 111. In other words, in the inside of the processing container 100, the wafer W to be processed is placed on the upper side, and the supporting wafer S is placed on the lower side, and the superposed wafer T is subjected to a peeling process.

上部吸盤110具有平板狀之本體部120。在本體部120之下面側配置有上述之保持部60a。保持部60a係對被處理晶圓W之非接合面W_N，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60a係以非接觸狀態保持被處理晶圓W。 The upper suction cup 110 has a flat body portion 120. The above-described holding portion 60a is disposed on the lower surface side of the main body portion 120. Holding section 60a based on the processing target wafer W W _N of the non-engaging surface, the gas discharged from the discharge port 62, and the suction gas from the suction port 63. Then, the holding portion 60a holds the wafer W to be processed in a non-contact state.

再者，在本體部120之內部，於保持部60a之上方，設置有加熱被處理晶圓W之加熱機構121。加熱機構121使用例如加熱器。 Further, inside the main body portion 120, a heating mechanism 121 for heating the wafer W to be processed is provided above the holding portion 60a. The heating mechanism 121 uses, for example, a heater.

在上部吸盤110之上面，設置有支撐該上部吸盤110之支撐板130。支撐板130被支撐於處理容器100之頂棚面。並且，即使省略本實施形態之支撐板130，上部吸盤110抵接於處理容器100之頂棚面而被支撐亦可。 Above the upper suction cup 110, a support plate 130 supporting the upper suction cup 110 is provided. The support plate 130 is supported on the ceiling surface of the processing container 100. Further, even if the support plate 130 of the present embodiment is omitted, the upper suction cup 110 may be supported by being supported by the ceiling surface of the processing container 100.

在下部吸盤111之內部設置有用以吸附保持支撐晶圓S之吸引管140。吸引管140連接於例如真空泵等之負壓產生裝置(無圖示)。 A suction pipe 140 for holding and holding the support wafer S is provided inside the lower suction cup 111. The suction pipe 140 is connected to a negative pressure generating device (not shown) such as a vacuum pump.

再者，在下部吸盤111之內部設置有用以加熱支撐晶圓S之加熱機構141。加熱機構141使用例如加熱器。 Further, a heating mechanism 141 for heating the support wafer S is provided inside the lower chuck 111. The heating mechanism 141 uses, for example, a heater.

在下部吸盤111之下方，設置有使下部吸盤111及支撐晶圓S在垂直方向及水平方向移動之移動機構150。移動機構150具有使下部吸盤111在垂直方向移動之垂直移動部151，和使下部吸盤111在水平方向移動之水平移動部152。 Below the lower suction cup 111, a lower suction cup 111 and a branch are provided. The moving mechanism 150 that supports the wafer S to move in the vertical direction and the horizontal direction. The moving mechanism 150 has a vertical moving portion 151 that moves the lower suction cup 111 in the vertical direction, and a horizontal moving portion 152 that moves the lower suction cup 111 in the horizontal direction.

垂直移動部151具有支撐下部吸盤111之下面的支撐板160，和使支撐板160升降而使上部吸盤110和下部吸盤111在垂直方向接近、分離之驅動部161，和支撐支撐板160之支撐構件162。驅動部161具有例如滾珠螺桿(無圖示)和使該滾珠螺桿轉動之馬達(無圖示)。再者，支撐構件162被構成在垂直方向伸縮自如，在支撐板160和後述支撐體171之間設置例如3處。 The vertical moving portion 151 has a support plate 160 that supports the lower surface of the lower suction cup 111, and a driving portion 161 that lifts and lowers the support plate 160 so that the upper suction cup 110 and the lower suction cup 111 are vertically separated and separated, and a supporting member that supports the support plate 160. 162. The drive unit 161 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, the support member 162 is configured to be expandable and contractible in the vertical direction, and is provided, for example, at three places between the support plate 160 and a support body 171 to be described later.

水平移動部152具有沿著X方向(第5圖中之左右方向)而延伸之軌道170，和被安裝於軌道170之支撐體171，和使支撐體171沿著軌道170移動之驅動部172。驅動部172具有例如滾珠螺桿(無圖示)和使該滾珠螺桿轉動之馬達(無圖示)。 The horizontal moving portion 152 has a rail 170 extending in the X direction (the horizontal direction in FIG. 5), a support body 171 attached to the rail 170, and a driving portion 172 that moves the support body 171 along the rail 170. The drive unit 172 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

並且，在下部吸盤111之下方，設置有從下方支撐重合晶圓T或支撐晶圓S並使予以升降之升降銷(無圖示)。升降銷插通形成在下部吸盤111之貫通孔(無圖示)，成為能夠從下部吸盤111之上面突出。 Further, below the lower suction cup 111, a lift pin (not shown) that supports the wafer T or the support wafer S from below is provided. The lift pin is inserted through a through hole (not shown) formed in the lower chuck 111 so as to be able to protrude from the upper surface of the lower chuck 111.

接著，針對上述之第1洗淨裝置31之構成予以說明。第1洗淨裝置31如第6圖所示般具有處理容器180。在處理容器180之側面，形成被處理晶圓W之搬入搬出口(無圖示)，在該搬入搬出口設置有開關快門(無圖示)。 Next, the configuration of the above-described first cleaning device 31 will be described. The first cleaning device 31 has a processing container 180 as shown in Fig. 6 . On the side of the processing container 180, a loading/unloading port (not shown) of the processed wafer W is formed, and a switching shutter is provided at the loading/unloading port (no picture) Show).

在處理容器180內之中央部設置有保持被處理晶圓W而使旋轉之吸盤190。吸盤190具有平板狀之本體部191。在本體部191之上面側配置有上述之保持部60b。保持部60b係對被處理晶圓W之非接合面W_N，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60b係以非接觸狀態保持被處理晶圓W。 A suction cup 190 that holds the wafer W to be processed and rotates is provided at a central portion of the processing container 180. The suction cup 190 has a flat body portion 191. The above-described holding portion 60b is disposed on the upper surface side of the main body portion 191. Line holding portion 60b of the processing target wafer W W _N of the non-engaging surface, the gas discharged from the discharge port 62, and the suction gas from the suction port 63. Then, the holding portion 60b holds the wafer W to be processed in a non-contact state.

在吸盤190之下方設置有具備有例如馬達等之吸盤驅動部192。吸盤190係可以藉由吸盤驅動部192以規定之速度旋轉。再者，在吸盤驅動部192設置有例如氣缸等之升降驅動源，吸盤190成為升降自如。 A suction cup drive unit 192 including, for example, a motor or the like is provided below the suction cup 190. The suction cup 190 can be rotated by the suction cup driving unit 192 at a predetermined speed. Further, the suction cup drive unit 192 is provided with a lifting drive source such as an air cylinder, and the suction cup 190 is movable up and down.

在吸盤190之周圍設置有用以接取、回收從被處理晶圓W飛散或滴落之液體的罩杯193。在罩杯193之下面連接有排出回收之液體的排出管194，和對罩杯193內之氛圍抽真空而予以排氣的排氣管195。 A cup 193 for picking up and collecting liquid that is scattered or dripped from the wafer W to be processed is provided around the chuck 190. A discharge pipe 194 for discharging the recovered liquid and an exhaust pipe 195 for evacuating the atmosphere in the cup 193 are connected to the lower surface of the cup 193.

如第7圖所示般，在罩杯193之X方向負方向(第7圖中之下方向)側，形成有沿著Y方向(第7圖中之左右方向)延伸的軌道200。軌道200係從例如罩杯193之Y方向負方向(第7圖中之左方向)側之外方形成至Y方向正方向(第7圖中之右方向)側之外方。在軌道200安裝有機械臂201。 As shown in Fig. 7, a rail 200 extending in the Y direction (the horizontal direction in Fig. 7) is formed on the side of the cup 193 in the negative direction of the X direction (the lower direction in Fig. 7). The rail 200 is formed, for example, from the outside in the negative direction of the Y direction of the cup 193 (the left direction in FIG. 7) to the outside in the positive direction of the Y direction (the right direction in FIG. 7). A robot arm 201 is mounted on the rail 200.

在機械臂201如第6圖及第7圖所示般，支撐有對被處理晶圓W供給例如有機溶劑之洗淨液的洗淨液噴嘴203。機械臂201係藉由第7圖所示之噴嘴驅動部204而在軌道200上移動自如。依此，洗淨液噴嘴203可以從被設置在罩杯193之Y方向正方向側之外方的待機部205移動至罩杯193內之被處理晶圓W之中心部上方，並且可以在該被處理晶圓W上朝被處理晶圓W之徑向移動。再者，機械臂201係藉由噴嘴驅動部204升降自如，可以調節洗淨液噴嘴203之高度。 As shown in FIGS. 6 and 7 , the robot arm 201 supports a cleaning liquid nozzle 203 that supplies a cleaning liquid such as an organic solvent to the wafer W to be processed. The robot arm 201 is driven by the nozzle driving unit 204 shown in FIG. Move freely on the track 200. According to this, the cleaning liquid nozzle 203 can be moved from the standby portion 205 provided outside the positive direction side of the cup 193 in the Y direction to the upper portion of the processed wafer W in the cup 193, and can be processed therein. The wafer W moves in the radial direction of the processed wafer W. Further, the robot arm 201 can be lifted and lowered by the nozzle driving unit 204, and the height of the cleaning liquid nozzle 203 can be adjusted.

洗淨液噴嘴203使用例如2流體噴嘴。洗淨液噴嘴203如第6圖所示般連接有對該洗淨液噴嘴203供給洗淨液之供給管210。供給管210與在內部貯留洗淨液之洗淨液供給源211連通。在供給管210設置有包含控制洗淨液之流動的閥或流量調節部等之供給機器群212。再者，在洗淨液噴嘴203連接有對該洗淨液噴嘴203供給惰性氣體例如氮氣之供給管213。供給管213與在內部貯留惰性氣體之氣體供給源214連通。在供給管213設置有包含控制惰性氣體之流動的閥或流量調節部等之供給機器群215。然後，洗淨液和惰性氣體係在洗淨液噴嘴203內混合，從該洗淨液噴嘴203被供給至被處理晶圓W。並且，在下述中，有將混合洗淨液和惰性氣體單稱為「洗淨液」之情形。 The cleaning liquid nozzle 203 uses, for example, a two-fluid nozzle. As shown in FIG. 6, the cleaning liquid nozzle 203 is connected to a supply pipe 210 for supplying the cleaning liquid to the cleaning liquid nozzle 203. The supply pipe 210 communicates with the cleaning liquid supply source 211 that stores the cleaning liquid therein. The supply pipe 210 is provided with a supply machine group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. Further, a supply pipe 213 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 203 is connected to the cleaning liquid nozzle 203. The supply pipe 213 is in communication with a gas supply source 214 that stores an inert gas therein. The supply pipe 213 is provided with a supply machine group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. Then, the cleaning liquid and the inert gas system are mixed in the cleaning liquid nozzle 203, and supplied from the cleaning liquid nozzle 203 to the wafer W to be processed. In addition, in the following, the mixed cleaning liquid and the inert gas are simply referred to as "cleaning liquid".

並且，即使在吸盤190之下方，設置有用以從下方支撐被處理晶圓W並使升降之升降銷(無圖示)亦可。在如此之情形下，升降銷插通形成在吸盤190之貫通孔(無圖示)，成為能夠從吸盤190之上面突出。然後，使升降銷升降以取代使吸盤190升降，而在與吸盤190之間進行被處理晶圓W之收授。並且，上述檢查後洗淨站8之接合面洗淨裝置40和非接合面洗淨裝置41之構成因與該第1洗淨裝置31之構成相同，故省略說明。 Further, even below the suction cup 190, a lift pin (not shown) for supporting the wafer W to be processed from below and lifting it up may be provided. In such a case, the lift pins are inserted through the through holes (not shown) of the suction cup 190, and are protruded from the upper surface of the suction cup 190. Then, the lift pin is lifted and lowered to replace the suction cup 190, and is carried out between the suction cup 190 and the suction cup 190. Processing wafer W is accepted. Further, since the configuration of the joint surface cleaning device 40 and the non-joining surface cleaning device 41 of the post-inspection cleaning station 8 is the same as that of the first cleaning device 31, the description thereof is omitted.

再者，第2洗淨裝置33之構成，幾乎與上述第1洗淨裝置31之構成相同。在第2洗淨裝置33如第8圖所示般，設置有旋轉吸盤220，以取代第1洗淨裝置31之吸盤190。旋轉吸盤220具有水平之上面，在該上面設置有例如吸引支撐晶圓S之吸引口(無圖示)。藉由自該吸引口之吸引，可以在旋轉吸盤220上吸附保持支撐晶圓S。第2洗淨裝置33之其他構成因與上述第1洗淨裝置31之構成相同，故省略說明。 Further, the configuration of the second cleaning device 33 is almost the same as the configuration of the first cleaning device 31 described above. As shown in FIG. 8, the second cleaning device 33 is provided with a rotary chuck 220 instead of the suction cup 190 of the first cleaning device 31. The spin chuck 220 has a horizontal upper surface on which a suction port (not shown) for sucking the support wafer S is provided, for example. The support wafer S can be adsorbed and held on the spin chuck 220 by suction from the suction port. The other configuration of the second cleaning device 33 is the same as that of the first cleaning device 31, and thus the description thereof is omitted.

並且，在第2洗淨裝置33中，即使在旋轉吸盤220之下方，設置朝向支撐晶圓S之背面，即是非接合面W_N噴射洗淨液之背面沖洗噴嘴(無圖示)亦可。藉由自該背面沖洗噴嘴噴射之洗淨液，洗淨支撐晶圓S之非接合面S_N和支撐晶圓S之外周部。 Further, in the second cleaning device 33, a back surface washing nozzle (not shown) that sprays the cleaning liquid on the non-joining surface W _N may be provided below the spin chuck 220. The non-joining surface S _{N of the} supporting wafer S and the outer peripheral portion of the supporting wafer S are cleaned by the cleaning liquid sprayed from the backside rinsing nozzle.

接著，針對上述之第2搬運裝置32之構成予以說明。第2洗淨裝置32如第9圖所示般具有上述保持部60c。保持部60c係對被處理晶圓W之接合面W_J，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60c係以非接觸狀態保持被處理晶圓W。 Next, the configuration of the second conveying device 32 described above will be described. The second cleaning device 32 has the above-described holding portion 60c as shown in Fig. 9. The holding portion 60c discharges gas from the discharge port 62 to the joint surface W _{J of the} wafer W to be processed, and sucks gas from the suction port 63. Then, the holding portion 60c holds the wafer W to be processed in a non-contact state.

保持部60c被支撐於支撐臂230。支撐臂230係被支撐於當作轉動機構之第1驅動部231。藉由該第1驅動部231，支撐臂230係繞水平軸旋轉自如，並且可以在水平方向伸縮。在第1驅動部231之下方設置有第2驅動部232。藉由該第2驅動部232，第1驅動部231繞垂直軸旋轉自如，並且可以在垂直方向升降。 The holding portion 60c is supported by the support arm 230. The support arm 230 is supported by the first drive unit 231 as a rotation mechanism. With the first driving portion 231, the support arm 230 is rotatable about a horizontal axis and can be horizontal The direction is flexible. A second driving unit 232 is provided below the first driving unit 231. The first drive unit 231 is rotatable about the vertical axis by the second drive unit 232, and can be moved up and down in the vertical direction.

並且，第3搬運裝置51因具有與上述第2搬運裝置32相同之構成，故省略說明。但是，第3搬運裝置51之第2驅動部232被安裝於第1圖所示之搬運路徑50，第3搬運裝置51而能夠在搬運路徑50上移動。 Further, since the third conveying device 51 has the same configuration as that of the second conveying device 32, description thereof will be omitted. However, the second drive unit 232 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1 , and the third transport device 51 can move on the transport path 50 .

接著，針對上述反轉裝置42之構成予以說明。反轉裝置42係如第10圖所示般，在其內部具有收容複數機器的處理容器240。在處理容器240之側面形成有藉由第3搬運裝置51用以進行被處理晶圓W之搬入搬出的搬入搬出口(無圖示)，在該搬入搬出口(無圖示)設置有開關快門(無圖示)。 Next, the configuration of the above-described inverting device 42 will be described. As shown in Fig. 10, the inverting device 42 has a processing container 240 for accommodating a plurality of devices therein. A loading/unloading port (not shown) for carrying in and carrying out the processed wafer W by the third conveying device 51 is formed on the side surface of the processing container 240, and a switching shutter is provided at the loading/unloading port (not shown). (No picture).

在處理容器240之底面，形成有排出該處理容器240之內部之氛圍的排氣口250。在排氣口250連接有例如與真空泵等之排氣裝置251連通之排氣管252。 On the bottom surface of the processing container 240, an exhaust port 250 for discharging the atmosphere inside the processing container 240 is formed. An exhaust pipe 252 that communicates with, for example, an exhaust device 251 such as a vacuum pump is connected to the exhaust port 250.

在處理容器240之內部，設置有以下面保持被處理晶圓W之上部吸盤260，和在上面載置被處理晶圓W而予以保持之下部吸盤261。上部吸盤260係被設置在下部吸盤261之上方，配置成與下部吸盤261相向。 Inside the processing container 240, a suction cup 260 is held on the lower surface of the wafer W to be processed, and a wafer W to be processed is placed thereon to hold the lower suction cup 261. The upper suction cup 260 is disposed above the lower suction cup 261 and is disposed to face the lower suction cup 261.

上部吸盤260具有平板狀之本體部270。在本體部270之下面側配置有上述之保持部60d。保持部60d係對被處理晶圓W，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60d係以非接觸狀態保持被處理晶圓W。 The upper suction cup 260 has a flat body portion 270. The above-described holding portion 60d is disposed on the lower surface side of the main body portion 270. The holding portion 60d discharges the gas from the discharge port 62 to the wafer W to be processed, and sucks the gas from the suction port 63. Then, the holding portion 60d is kept in a non-contact state. Wafer W.

在上部吸盤260之上面，設置有支撐該上部吸盤260之支撐板271。支撐板271被支撐於處理容器240之頂棚面。並且，即使省略本實施形態之支撐板271，上部吸盤260抵接於處理容器240之頂棚面而被支撐亦可。 Above the upper suction cup 260, a support plate 271 supporting the upper suction cup 260 is provided. The support plate 271 is supported on the ceiling surface of the processing container 240. Further, even if the support plate 271 of the present embodiment is omitted, the upper suction cup 260 may be supported by being supported by the ceiling surface of the processing container 240.

下部吸盤261具有平板狀之本體部280。在本體部280之上面側配置有上述之保持部60e。保持部60e係對被處理晶圓W，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60e係以非接觸狀態保持被處理晶圓W。 The lower suction cup 261 has a flat body portion 280. The above-described holding portion 60e is disposed on the upper surface side of the main body portion 280. The holding portion 60e discharges gas from the discharge port 62 to the wafer W to be processed, and sucks gas from the suction port 63. Then, the holding portion 60e holds the wafer W to be processed in a non-contact state.

在下部吸盤261之下方設置有使該下部吸盤261在垂直方向移動之移動機構281。移動機構281具有支撐下部吸盤261之下面的支撐板282，和使支撐板282升降而使上部吸盤260和下部吸盤261在垂直方向接近、分離之驅動部283。驅動部283係藉由被設置在處理容器240之底面的支撐體284而被支撐。再者，在支撐體284之上面設置有支撐支撐板282之支撐構件285。支撐構件285係被構成在垂直方向伸縮自如，藉由驅動部283使支撐板282升降之時，可以自由地伸縮。 A moving mechanism 281 for moving the lower suction cup 261 in the vertical direction is provided below the lower suction cup 261. The moving mechanism 281 has a support plate 282 that supports the lower surface of the lower suction cup 261, and a drive portion 283 that lifts and lowers the support plate 282 so that the upper suction cup 260 and the lower suction cup 261 approach and separate in the vertical direction. The drive unit 283 is supported by a support body 284 provided on the bottom surface of the processing container 240. Further, a support member 285 supporting the support plate 282 is disposed on the support body 284. The support member 285 is configured to be expandable and contractible in the vertical direction, and can be freely expanded and contracted when the support plate 282 is moved up and down by the drive unit 283.

接著，針對上述檢查裝置7之構成予以說明。檢查裝置7係如第11圖及第12圖所示般具有處理容器290。在處理容器290之側面，形成被處理晶圓W之搬入搬出口(無圖示)，在該搬入搬出口設置有開關快門(無圖示)。 Next, the configuration of the above-described inspection device 7 will be described. The inspection device 7 has a processing container 290 as shown in Figs. 11 and 12. On the side of the processing container 290, a loading/unloading port (not shown) of the processed wafer W is formed, and a switching shutter (not shown) is provided at the loading/unloading port.

在處理容器290內設置有保持被處理晶圓W之吸盤 300。吸盤300具有平板狀之本體部301。在本體部301之上面側配置有上述之保持部60f。保持部60f係對被處理晶圓W，從噴出口62噴出氣體，並且從吸引口63吸引氣體。然後，保持部60f係以非接觸狀態保持被處理晶圓W。 A suction cup for holding the processed wafer W is disposed in the processing container 290. 300. The suction cup 300 has a flat body portion 301. The above-described holding portion 60f is disposed on the upper surface side of the main body portion 301. The holding portion 60f discharges the gas from the discharge port 62 against the wafer W to be processed, and sucks the gas from the suction port 63. Then, the holding portion 60f holds the wafer W to be processed in a non-contact state.

在吸盤300之下方設置有吸盤驅動部302。藉由該吸盤驅動部302，吸盤300旋轉自如。再者，吸盤驅動部302係被設置在處理容器290內之底面，且被安裝於沿著Y方向而延伸之軌道303上。藉由該吸盤驅動部302，吸盤300可以沿著軌道303而移動。即是，吸盤300係可以使被處理晶圓W在用以在與處理容器290之外部之間搬入搬出之收授位置P1，和調整被處理晶圓W之槽口部之位置的對準位置P2之間移動。 A suction cup driving portion 302 is provided below the suction cup 300. The chuck 300 is rotatable by the chuck driving unit 302. Further, the chuck driving unit 302 is provided on the bottom surface of the processing container 290, and is attached to the rail 303 extending in the Y direction. With the chuck driving portion 302, the chuck 300 can be moved along the rail 303. That is, the suction cup 300 is an alignment position at which the processed wafer W can be loaded and unloaded between the processing container 290 and the position of the notch portion of the processed wafer W. Move between P2.

在對準位置P2設置有檢測被保持於吸盤300之被處理晶圓W之槽口部之位置的感測器304。一面藉由感測器304檢測出槽口部之位置，一面藉由吸盤驅動部302使吸盤300旋轉，可以調節被處理晶圓W之槽口部之位置。 A sensor 304 that detects the position of the notch portion of the wafer W to be processed held by the chuck 300 is provided at the alignment position P2. When the position of the notch portion is detected by the sensor 304, the suction cup 300 is rotated by the suction cup driving unit 302, whereby the position of the notch portion of the wafer W to be processed can be adjusted.

在處理容器290之對準位置P2側之側面，設置有攝像裝置310。攝像裝置310使用例如廣角型之CCD照相機。在處理容器290之上部中央附近設置有半透鏡311。半透鏡311係被設置在與攝像裝置310對向之位置，從垂直方向傾斜45度而被設置。在半透鏡311之上方，設置可以變更照度之照明裝置312，半透鏡311和照明裝置312係被固定在處理容器290之上面。再者，攝像裝置 310、半透鏡311及照明裝置312各被設置在被保持於吸盤300之被處理晶圓W之上方。然後，來自照明裝置312之照明係通過半透鏡311而朝下方照射。因此，位於該照射區域之物體的反射光，在半透鏡311反射，並被取入至攝像裝置310。即是，攝像裝置310係可以攝影位於照射區域的物體。然後，攝像到之被處理晶圓W之畫像被輸出至後述之控制部350，在控制部350中檢查被處理晶圓W上有無接著劑G之殘渣。 On the side of the processing container 290 on the side of the alignment position P2, an image pickup device 310 is provided. The imaging device 310 uses, for example, a wide-angle type CCD camera. A half mirror 311 is provided near the center of the upper portion of the processing container 290. The half mirror 311 is provided at a position opposed to the imaging device 310, and is inclined by 45 degrees from the vertical direction. Above the half mirror 311, an illumination device 312 capable of changing the illuminance is provided, and the half mirror 311 and the illumination device 312 are fixed on the processing container 290. Furthermore, the camera 310, the half mirror 311, and the illumination device 312 are each disposed above the wafer W to be processed held by the chuck 300. Then, the illumination from the illumination device 312 is irradiated downward through the half mirror 311. Therefore, the reflected light of the object located in the irradiation area is reflected by the half mirror 311 and taken into the imaging device 310. That is, the imaging device 310 can capture an object located in the irradiation area. Then, the image of the processed wafer W imaged is output to a control unit 350, which will be described later, and the control unit 350 checks whether or not the residue of the adhesive G is present on the wafer W to be processed.

在上述之剝離系統1，如第1圖所示般設置有控制部350。控制部350係例如電腦，具有程式儲存部(無圖示)。在程式儲存部儲存有控制剝離系統1中之被處理晶圓W、支撐晶圓S、重合晶圓T之處理的程式。再者，於程式儲存部也儲存有用以控制上述各種處理裝置或搬運裝置等之驅動系統之動作，而實現剝離系統1中之後述的剝離處理之程式。並且，上述程式，為被記錄於例如電腦可讀取之硬碟(HD)、軟碟(FD)、光碟(CD)、光磁碟(MO)、記憶卡等之電腦可讀取之記憶媒體H者，即使為自其記憶媒體H被存取於控制部350者亦可。 In the above-described peeling system 1, as shown in Fig. 1, a control unit 350 is provided. The control unit 350 is, for example, a computer, and has a program storage unit (not shown). A program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1 is stored in the program storage unit. Further, in the program storage unit, a program for controlling the above-described various processing devices, transport devices, and the like to store the peeling process described later in the peeling system 1 is also stored. Further, the program is a computer readable memory medium recorded on, for example, a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magnetic disk (MO), a memory card, or the like. H may be accessed from the control unit 350 even from the memory medium H.

接著，針對使用如上述般構成之剝離系統1而執行之被處理晶圓W和支撐晶圓S之剝離處理方法予以說明。第13圖為表示如此之剝離處理之主要工程之例子的流程圖。 Next, a method of peeling off the processed wafer W and the supporting wafer S which are performed using the peeling system 1 configured as described above will be described. Figure 13 is a flow chart showing an example of the main work of such a stripping process.

首先，收容有複數片重合晶圓T之卡匣C_T、空的卡匣C_W及空的卡匣C_S，被載置在搬入搬出站2之特定的卡匣載置板11。藉由第1搬運裝置20，卡匣C_T內之重合晶圓T被取出，被搬運至剝離處理站3之剝離裝置30。此時，重合晶圓T係在將被處理晶圓W配置在上側，並且將支撐晶圓S配置在下側的狀態下被搬運。 First, the cassette C _T , the empty cassette C _{W ,} and the empty cassette C _{S in} which the plurality of wafers T are stacked are placed on the specific cassette mounting plate 11 of the loading/unloading station 2 . By the first conveying device 20, the superposed wafer T in the cassette C _T is taken out and transported to the peeling device 30 of the peeling processing station 3. At this time, the superposed wafer T is transported while the wafer W to be processed is placed on the upper side and the support wafer S is placed on the lower side.

被搬入至剝離裝置30之重合晶圓T被吸附保持在下部吸盤111。之後，藉由移動機構150，使下部吸盤111上升，如第14圖所示般，以上部吸盤110和下部吸盤111夾持重合晶圓T而予以保持。此時，在上部吸盤110之保持部60a以非接觸狀態保持被處理晶圓W之非接合面W_N，在下部吸盤111吸附保持支撐晶圓S之非接合面SN。 The superposed wafer T carried into the peeling device 30 is adsorbed and held by the lower chuck 111. Thereafter, the lower suction cup 111 is raised by the moving mechanism 150, and as shown in Fig. 14, the upper suction cup 110 and the lower suction cup 111 are held by sandwiching the superposed wafer T. At this time, the holding portion 60a of the upper chuck 110 holding the wafer W to be processed W _N of the non-bonding surface in a non-contact state, the non-bonding SN holding wafer S is supported in a lower portion of the adsorption chuck 111.

之後，重合晶圓T藉由加熱機構121、141被加熱至規定之溫度，例如200℃。如此一來，重合晶圓T中之接著劑G軟化。 Thereafter, the superposed wafer T is heated to a predetermined temperature by the heating means 121, 141, for example, 200 °C. As a result, the adhesive G in the coincident wafer T is softened.

接著，一面藉由加熱機構121、141加熱重合晶圓T而維持接著劑G之軟化狀態，一面如第15圖所示般，藉由移動機構150使下部吸盤111和支撐晶圓S在垂直方向及水平方向，即是斜下方移動。然後，如第16圖所示般，被保持於上部吸盤110之被處理晶圓W和被保持於下部吸盤111之支撐晶圓S被剝離(第13圖之工程A1)。 Next, while the superposed wafer T is heated by the heating mechanisms 121 and 141 to maintain the softened state of the adhesive G, the lower chuck 111 and the supporting wafer S are vertically oriented by the moving mechanism 150 as shown in FIG. And the horizontal direction, that is, moving obliquely downward. Then, as shown in Fig. 16, the processed wafer W held by the upper chuck 110 and the supporting wafer S held by the lower chuck 111 are peeled off (the construction A1 of Fig. 13).

此時，下部吸盤111在垂直方向移動100μm，並且在水平方向移動300mm。在此，在本實施形態中，重合晶圓T中之接著劑G之厚度例如30μm~40μm，形成在被處理晶圓W之接合面W_J之裝置(凸塊)的高度例如20μ m。因此，被處理晶圓W上之裝置和支撐晶圓S之間的距離微小。在此，於例如使下部吸盤111僅在水平方向移動之時，裝置和支撐晶圓S接觸，裝置有可能受到損傷。該點，藉由如本實施形態般使下部吸盤111在水平方向移動，並且也在垂直方向移動，可以迴避裝置和支撐晶圓S之接觸，抑制裝置之損傷。並且，該下部吸盤111之垂直方向之移動距離和水平方向之移動距離之比率係根據被處理晶圓W上之裝置(凸塊)之高度而設定。 At this time, the lower suction cup 111 is moved by 100 μm in the vertical direction and by 300 mm in the horizontal direction. Here, in the present embodiment, the thickness of the adhesive G in the superposed wafer T is, for example, 30 μm to 40 μm, and the height of the device (bump) formed on the bonding surface W _J of the wafer W to be processed is, for example, 20 μm. Therefore, the distance between the device on the processed wafer W and the supporting wafer S is small. Here, when the lower chuck 111 is moved only in the horizontal direction, for example, the device comes into contact with the supporting wafer S, and the device may be damaged. At this point, by moving the lower chuck 111 in the horizontal direction as in the present embodiment and also moving in the vertical direction, the contact between the device and the supporting wafer S can be avoided, and the damage of the device can be suppressed. Further, the ratio of the moving distance in the vertical direction of the lower chuck 111 to the moving distance in the horizontal direction is set in accordance with the height of the device (bump) on the wafer W to be processed.

之後，在剝離裝置30被剝離之被處理晶圓W藉由第2搬運裝置32被搬運至第1洗淨裝置31。在此，針對藉由第2搬運裝置32之被處理晶圓W之搬運方法予以說明。 Thereafter, the processed wafer W that has been peeled off by the peeling device 30 is transported to the first cleaning device 31 by the second transfer device 32. Here, a method of transporting the processed wafer W by the second transport device 32 will be described.

如第17圖所示般，使第2搬運裝置32之支撐臂230伸長，而將保持部60c配置在被上部吸盤110保持之被處理晶圓W之下方。之後，使保持部60c上升，停止上部吸盤110之保持部60a中之噴出口62噴出氣體和從吸引口63吸引氣體。然後，被處理晶圓W從上部吸盤110被收授至保持部60c。然後，藉由保持部60c以非接觸狀態保持被處理晶圓W之接合面W_J。 As shown in Fig. 17, the support arm 230 of the second transport device 32 is extended, and the holding portion 60c is placed below the wafer W to be processed held by the upper chuck 110. Thereafter, the holding portion 60c is raised, and the discharge port 62 in the holding portion 60a of the upper chuck 110 is stopped to discharge the gas and suck the gas from the suction port 63. Then, the processed wafer W is taken up from the upper chuck 110 to the holding portion 60c. Then, the holding portion 60c holds the joint surface W _{J of the} wafer W to be processed in a non-contact state.

接著，如第18圖所示般，轉動第2搬運裝置32之支撐臂230而使保持部60c移動至第1洗淨裝置31之吸盤190之上方，並且使保持部60c反轉而使被處理晶圓W朝向下方。此時，使吸盤190上升至較罩杯193上方而進行待機。之後，被處理晶圓W從保持部60c被收授至吸盤 190。然後，藉由吸盤190之保持部60b以非接觸狀態保持被處理晶圓W之非接合面W_N。 Then, as shown in Fig. 18, the support arm 230 of the second conveying device 32 is rotated to move the holding portion 60c above the suction cup 190 of the first cleaning device 31, and the holding portion 60c is reversed to be processed. The wafer W faces downward. At this time, the suction cup 190 is raised above the cup 193 to stand by. Thereafter, the processed wafer W is taken up from the holding portion 60c to the chuck 190. Then, the non-joining surface W _{N of the} wafer W to be processed is held in a non-contact state by the holding portion 60b of the chuck 190.

如此，當被處理晶圓W被保持在吸盤190時，則使吸盤190下降至規定之位置。接著，藉由機械臂201使待機部205之洗淨液噴嘴203移動至被處理晶圓W之中心部之上方。之後，一面藉由吸盤190使被處理晶圓W旋轉，一面從洗淨液噴嘴203對被處理晶圓W之接合面W_J供給洗淨液。被供給之洗淨液藉由離心力，被擴散至被處理晶圓W之接合面W_J之全面，洗淨該被處理晶圓W之接合面W_J(第13圖之工程A2)。 Thus, when the wafer W to be processed is held by the chuck 190, the chuck 190 is lowered to a predetermined position. Next, the cleaning nozzle 203 of the standby unit 205 is moved by the robot arm 201 above the center portion of the wafer W to be processed. Thereafter, while the wafer W to be processed is rotated by the chuck 190, the cleaning liquid is supplied from the cleaning liquid nozzle 203 to the bonding surface W _{J of the} wafer W to be processed. The washing liquid is fed by a centrifugal force is diffused to the bonding surface of the wafer W to be processed W _J Comprehensively, washing the joint surface of the treated wafer W W _J (FIG. 13 Engineering of A2).

在此，對如上述般被搬入至搬入搬出站2之複數重合晶圓T進行事先檢查，判別成含有正常之被處理晶圓W的重合晶圓T和具有缺陷之被處理晶圓W的重合晶圓T。 Here, the plurality of coincident wafers T loaded into the loading/unloading station 2 as described above are inspected in advance, and it is determined that the superposed wafer T including the normal processed wafer W and the processed wafer W having defects are overlapped. Wafer T.

從正常之重合晶圓T剝離之正常的被處理晶圓W於在工程A2中接合面W_J被洗淨之後，以非接合面W_N朝向下方之狀態藉由第3搬運裝置51被搬運至檢查裝置7。並且，藉由該第3搬運裝置51之被處理晶圓W之搬運因幾乎與藉由上述第2搬運裝置32之被處理晶圓W之搬運相同，故省略說明。 The normal processed wafer W peeled off from the normal overlap wafer T is transported to the lower surface of the joint surface W _J in the process A2, and then transported to the lower side by the third transport device 51 with the non-joining surface W _N facing downward. Inspection device 7. In addition, since the conveyance of the wafer W to be processed by the third conveyance device 51 is almost the same as the conveyance of the wafer W to be processed by the second conveyance device 32, description thereof will be omitted.

被搬運至檢查裝置7之被處理晶圓W係在收授位置P1被保持在吸盤300上。此時，吸盤300之保持部60f以非接觸狀態保持被處理晶圓W之非接合面W_N。接著，藉由吸盤驅動部302將吸盤300移動至對準位置P2。接著，一面藉由感測器304檢測出被處理晶圓W之溝口部之位置，一面藉由吸盤驅動部302使吸盤300旋轉。然後，調整被處理晶圓W之槽口部之位置，而將被處理晶圓W配置在特定位置。 The wafer W to be processed conveyed to the inspection device 7 is held on the chuck 300 at the receiving position P1. At this time, the holding portion 60f of the suction cup 300 holds the non-joining surface W _{N of the} wafer W to be processed in a non-contact state. Next, the chuck 300 is moved to the alignment position P2 by the chuck driving unit 302. Next, the position of the groove portion of the wafer W to be processed is detected by the sensor 304, and the chuck 300 is rotated by the chuck driving unit 302. Then, the position of the notch portion of the wafer W to be processed is adjusted, and the wafer W to be processed is placed at a specific position.

之後，藉由吸盤驅動部302使吸盤300從對準位置P2移動至收授位置P1。然後，於被處理晶圓W通過半透鏡311之下時，則從照明裝置312對被處理晶圓W照射照明。藉由該照明之被處理晶圓W上之反射光被取入至攝像裝置310，在攝像裝置310中攝像被處理晶圓W之接合面W_J之畫像。被攝像之被處理晶圓W之接合面W_J之畫像被輸出至控制部350，在控制部350中，檢查被處理晶圓W之接合面W_J中有無接著劑G之殘渣(第13圖之工程A3)。 Thereafter, the suction cup drive unit 302 moves the suction cup 300 from the alignment position P2 to the receiving position P1. Then, when the wafer W to be processed passes under the half mirror 311, the wafer W to be processed is illuminated from the illumination device 312. The reflected light on the processed wafer W by the illumination is taken into the imaging device 310, and an image of the bonding surface W _J of the processed wafer W is imaged by the imaging device 310. The image of the joint surface W _J of the imaged wafer W to be imaged is output to the control unit 350, and the control unit 350 checks whether or not the residue of the adhesive G is present in the joint surface W _J of the wafer W to be processed (Fig. 13). Engineering A3).

在檢查裝置7中，於確認接著劑G之殘渣時，被處理晶圓W藉由第3搬運裝置51，被搬運至檢查後洗淨站8之接合面洗淨裝置40，在接合面洗淨裝置40洗淨接合面W_J(第13圖之工程A4)。並且，即使在該搬運之時，第3搬運裝置51之保持部60c因以非接觸狀態保持被處理晶圓W，故不會有接合面W_J之接著劑G之殘渣附著於第3搬運裝置51之情形。因此，不會有經第3搬運裝置51而在後續之被處理晶圓W附著接著劑G之殘渣的情形。 In the inspection apparatus 7, when the residue of the adhesive G is confirmed, the processed wafer W is transported to the joint surface cleaning apparatus 40 of the post-inspection cleaning station 8 by the third conveyance device 51, and is washed on the joint surface. The device 40 cleans the joint surface W _J (the work A4 of Fig. 13). Further, even when the conveyance is performed, the holding portion 60c of the third conveyance device 51 holds the processed wafer W in a non-contact state, so that the residue of the adhesive G of the joint surface W _J does not adhere to the third conveyance device. 51 situation. Therefore, there is no possibility that the residue of the adhesive G adheres to the wafer W to be processed subsequent to the third conveyance device 51.

當接合面W_J被洗淨時，被處理晶圓W藉由第3搬運裝置51被搬運至反轉裝置42，藉由反轉裝置42使表背面反轉，即是被反轉至上下方向(第13圖之工程A5)。在此，針對藉由反轉裝置42之被處理晶圓W之反轉方法予以說明。 When the joint surface W _J is washed, the processed wafer W is transported to the inverting device 42 by the third transport device 51, and the front and back surfaces are reversed by the inverting device 42, that is, reversed to the up and down direction. (Project A5 in Figure 13). Here, a method of inverting the processed wafer W by the inversion device 42 will be described.

在接合面洗淨裝置40，接合面W_J被洗淨之被處理晶圓W係如第19圖所示般，在藉由第3搬運裝置51之保持部60c保持接合面W_J之狀態下被搬運至反轉裝置42。然後，被處理晶圓W係在接合面W_J朝向上方之狀態下被收授至反轉裝置42之下部吸盤261。然後，藉由下部吸盤261之保持部60e以非接觸狀態保持被處理晶圓W之非接合面W_N。 In the joint surface cleaning apparatus 40, the processed wafer W in which the bonding surface W _J is cleaned is in a state where the bonding surface W _J is held by the holding portion 60c of the third conveying device 51 as shown in FIG. It is carried to the inverting device 42. Then, the processed wafer W is taken up to the lower suction cup 261 of the inverting device 42 with the joint surface W _J facing upward. Then, the non-joining surface W _{N of the} wafer W to be processed is held in a non-contact state by the holding portion 60e of the lower chuck 261.

接著，使第3搬運裝置51之保持部60c從下部吸盤261之上方退避，之後藉由驅動部283使下部吸盤261上升，換言之如第20圖所示般使接近於上部吸盤260。然後，藉由上部吸盤260之保持部60d以非接觸狀態保持被處理晶圓W之接合面W_J，並且停止藉由下部吸盤261所進行被處理晶圓W之保持，而將被處理晶圓W收授至上部吸盤260。依此，如第21圖所示般，被處理晶圓W藉由上部吸盤260，使非接合面W_N朝係下方之狀態下被保持。 Then, the holding portion 60c of the third conveying device 51 is retracted from above the lower suction cup 261, and then the lower suction cup 261 is raised by the driving portion 283, in other words, as close to the upper suction cup 260 as shown in Fig. 20. Then, the bonding surface W _{J of the} processed wafer W is held in a non-contact state by the holding portion 60d of the upper chuck 260, and the wafer W to be processed by the lower chuck 261 is stopped, and the wafer to be processed is processed. W is accepted to the upper suction cup 260. So, as shown in FIG. 21 as the first, the wafer W is processed by the upper chuck 260, W _N of the non-bonding surface toward the bottom line is held in a state of.

之後，使下部吸盤261下降而隔離下部吸盤261和上部吸盤260，接著使退避之第3搬運裝置51之保持部60c繞水平軸轉動。然後，在保持部60c朝向上方之狀態下，將該保持部60c配置在上部吸盤260之下方。接著，使保持部60c上升，並且與此同時停止藉由上部吸盤260所進行之被處理晶圓W之保持。依此，於被搬入至接合面洗淨裝置40之時，藉由保持部60c保持接合面W_J之被處理晶圓W如第22圖所示般，成為藉由保持部60c保持非接合面W_N之狀態。即是，成為藉由保持部60c所保持之被處理晶圓之面之表背反轉之狀態。之後，在保持被處理晶圓W之非接合面W_N之狀態下，使保持部60c從反轉裝置42退避。 Thereafter, the lower suction cup 261 is lowered to isolate the lower suction cup 261 and the upper suction cup 260, and then the holding portion 60c of the retracted third conveying device 51 is rotated about the horizontal axis. Then, the holding portion 60c is disposed below the upper suction cup 260 with the holding portion 60c facing upward. Next, the holding portion 60c is raised, and at the same time, the holding of the processed wafer W by the upper chuck 260 is stopped. As a result, when the wafer wafer W to be bonded to the bonding surface W _J is held by the holding portion 60c as shown in FIG. 22, the non-joining surface is held by the holding portion 60c. The state of W _N. In other words, the surface of the wafer to be processed held by the holding portion 60c is reversed. Thereafter, while maintaining the wafer W to be processed W _N of the non-bonding surface of the holding portion 60c from the inverting means 42 is retracted.

並且，在檢查裝置7無確認到接著劑G之殘渣時，被處理晶圓W不被搬運至接合面洗淨裝置40，而在反轉裝置42進行被處理晶圓W之反轉，但是針對反轉之方法與上述方法相同。 When the inspection device 7 does not confirm the residue of the adhesive G, the processed wafer W is not transported to the bonding surface cleaning device 40, and the inverting device 42 reverses the processed wafer W, but The method of inversion is the same as the above method.

之後，在保持被處理晶圓W之狀態下使第3搬運裝置51之保持部60c繞水平軸轉動，而使被處理晶圓W上下方向反轉。然後，被處理晶圓W係在非接合面W_N朝上方之狀態下藉由保持部60c再次被搬運至檢查裝置7，進行非接合面W_N之檢查(第13圖之工程A6)。然後，在非接合面W_N確認出接著劑G之殘渣時，被處理晶圓W藉由第3搬運裝置51被搬運至非接合面洗淨裝置41，進行非接合面W_N之洗淨(第13圖之工程A7)。接著，被洗淨之被處理晶圓W藉由第3搬運裝置51被搬運至後處理站4。並且，在檢查裝置7無確認出接著劑G之殘渣時，被處理晶圓W不被搬運至非接合面洗淨裝置41，原樣地被搬運至後處理站4。 Thereafter, the holding portion 60c of the third conveying device 51 is rotated about the horizontal axis while the wafer W to be processed is held, and the wafer W to be processed is reversed in the vertical direction. Then, the treated wafer W by holding line portion 60c is conveyed in a state of non-engagement surface toward the top _N W again to the inspection apparatus 7, for checking W _N of the non-bonding surface (FIG. 13 Engineering of A6). When the residue of the adhesive G is confirmed on the non-joining surface W _N , the processed wafer W is transported to the non-joining surface cleaning device 41 by the third transfer device 51 to clean the non-joining surface W _N ( Project A7) of Figure 13. Then, the cleaned wafer W to be processed is transported to the post-processing station 4 by the third transport device 51. When the inspection device 7 does not confirm the residue of the adhesive G, the processed wafer W is not transported to the non-joining surface cleaning device 41, and is transported to the post-processing station 4 as it is.

之後，在後處理站4對被處理晶圓W進行規定之後處理(第13圖之工程A8)。如此一來，被處理晶圓W被製品化。 Thereafter, the post-processing station 4 performs predetermined processing on the processed wafer W (the construction A8 in Fig. 13). In this way, the processed wafer W is made. Productization.

另外，從具有缺陷之重合晶圓T被剝離的具有缺陷之被處理晶圓W於在工程A2洗淨接合面W_J之後，藉由第1搬運裝置20被搬運至搬入搬出站2。之後，具有缺陷之被處理晶圓W從搬入搬出站2被搬出至外部而被回收(第13圖之工程A9)。 In addition, the defective processed wafer W which has been peeled off from the defective superposed wafer T is transported to the loading/unloading station 2 by the first transport device 20 after the cleaning of the joint surface W _{J of the} project A2. After that, the defective processed wafer W is carried out from the loading/unloading station 2 to the outside and is collected (Project A9 in Fig. 13).

對被處理晶圓W進行上述工程A1~A9之間，在剝離裝置30被剝離之支撐晶圓S，藉由第1搬運裝置20被搬運至第2洗淨裝置33。然後，在第2洗淨裝置33中，洗淨支撐晶圓S之接合面S_J(第13圖之工程A10)。並且，第2洗淨裝置33中之支撐晶圓S之洗淨因與上述第1洗淨裝置31中之被處理晶圓W之洗淨相同，故省略說明。 The support wafer S in which the peeling device 30 is peeled off between the above-described processes A1 to A9 is processed by the first transfer device 20 to the second cleaning device 33. Then, in the second cleaning device 33, the bonding surface S _{J of the} supporting wafer S is cleaned (the construction A10 of Fig. 13). Further, since the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31, the description thereof is omitted.

之後，接合面S_J被洗淨之支撐晶圓S，藉由第1搬運裝置20被搬運至搬入搬出站2。之後，支撐晶圓S從搬入搬出站2被搬出至外部而被回收(第13圖之工程A11)。如此一來，完成一連串之被處理晶圓W和支撐晶圓S之剝離處理。 Thereafter, the supporting wafer S on which the bonding surface S _J is cleaned is transported to the loading/unloading station 2 by the first conveying device 20. After that, the support wafer S is carried out from the loading/unloading station 2 to the outside and is collected (Project A11 in Fig. 13). In this way, a series of stripping processes of the processed wafer W and the supporting wafer S are completed.

若藉由以上之實施形態時，於以保持部60保持被處理晶圓W之時，從保持部60之噴出口62噴出氣體，並且從吸引口63吸引氣體。如此一來，在保持部60和被處理晶圓W之間之間隙D中，可以形成從噴出口62朝向吸引口63之氣流F。而且，因保持部60係在涵蓋保持面61全面形成複數噴出口62和複數吸引口63，故該氣流F也形成在保持面61全面。然後，藉由該複數之氣流F，可以增大保持部60對被處理晶圓W之吸引力。即是，可以增大足夠將漂浮狀態之被處理晶圓W保持水平的剛性(漂浮剛性)。因此，即使在例如被薄型化之被處理晶圓W之外周部變形之狀態下，藉由保持部60，矯正被處理晶圓W之變形，可以適當保持被處理晶圓W。 According to the above embodiment, when the wafer W to be processed is held by the holding portion 60, gas is ejected from the discharge port 62 of the holding portion 60, and gas is sucked from the suction port 63. In this way, in the gap D between the holding portion 60 and the wafer W to be processed, the airflow F from the discharge port 62 toward the suction port 63 can be formed. Further, since the holding portion 60 integrally forms the plurality of discharge ports 62 and the plurality of suction ports 63 in the cover surface 61, the air flow F is also formed on the holding surface 61 in an all-round manner. Then, by the plural airflow F, The attraction force of the holding portion 60 to the wafer W to be processed is increased. That is, it is possible to increase the rigidity (floating rigidity) sufficient to keep the wafer W to be processed in a floating state horizontal. Therefore, even in the state where the peripheral portion of the wafer W to be processed is thinned, for example, the deformation of the wafer W to be processed is corrected by the holding portion 60, and the wafer W to be processed can be appropriately held.

再者，保持部60因可以非接觸狀態保持被處理晶圓W，故可以迴避被設置在該被處理晶圓W上之裝置受到損傷。並且，即使例如在保持部60附著微粒之時，該微粒也不會有附著於被處理晶圓W之情形。 Further, since the holding portion 60 can hold the wafer W to be processed in a non-contact state, it is possible to avoid damage to the device provided on the wafer W to be processed. Further, even when particles are adhered to the holding portion 60, for example, the particles do not adhere to the wafer W to be processed.

再者，保持部60a~60f各被設置在剝離裝置30、第1洗淨裝置31(接合面洗淨裝置40、非接合面洗淨裝置41)、第2搬運裝置32(第3搬運裝置51)、反轉裝置42、檢查裝置7。因此，在各裝置中，因藉由保持部60可以非接觸裝置適當地保持被處理晶圓W，故可以適當地進行被處理晶圓W之搬運或各種處理。 Further, each of the holding portions 60a to 60f is provided in the peeling device 30, the first cleaning device 31 (the joint surface cleaning device 40, the non-joining surface cleaning device 41), and the second conveying device 32 (the third conveying device 51) ), the inverting device 42 and the inspection device 7. Therefore, in each of the devices, the wafer W to be processed can be appropriately held by the non-contact device by the holding portion 60, so that the processing of the wafer W to be processed or various processes can be appropriately performed.

尤其，例如在剝離裝置30、第1洗淨裝置31(接合面洗淨裝置40、非接合面洗淨裝置41)、反轉裝置42、檢查裝置7中，適當地保持被薄型化之被處理晶圓W，故以往有使用多孔質之多孔性吸盤之情形。於如此使用多孔性吸盤之時，因接觸保持被處理晶圓W，故有被處理晶圓W上之裝置損傷之虞。再者，為了迴避如此之裝置之損傷，雖然多孔性吸盤也有使用軟的材料之情形，但是在如此之情形下，有多孔性吸盤被刮削而產生微粒之虞。再者，從多孔性吸盤收授被處理晶圓W之時，有產生剝離帶電，裝置損傷之虞。並且，於使用多孔性吸盤之時，因為被處理晶圓W上之裝置之凹凸，也有在多孔性吸盤和被處理晶圓W之間產生間隙，且以特定之吸引力無法適當地保持該被處理晶圓W之情形。 In particular, for example, the peeling device 30, the first cleaning device 31 (the joint surface cleaning device 40, the non-joining surface cleaning device 41), the inverting device 42, and the inspection device 7 are appropriately kept thinned and processed. Since wafer W is used, a porous porous chuck has been used in the past. When the porous chuck is used as described above, since the wafer W to be processed is held by contact, the device on the wafer W to be processed is damaged. Further, in order to avoid the damage of such a device, although the porous chuck has a soft material, in this case, the porous chuck is scraped to generate particles. Furthermore, when the wafer W to be processed is received from the porous chuck, peeling electrification occurs. The damage of the device. Further, when the porous chuck is used, a gap is formed between the porous chuck and the wafer W to be processed due to the unevenness of the device on the wafer W to be processed, and the attraction cannot be appropriately maintained with a specific attraction force. The case of processing the wafer W.

針對此點，因本實施形態之保持部60可以非接觸狀態保持被處理晶圓W，故迴避裝置之損傷，並回避微粒之附著，回避剝離帶電，可以特定之吸引力保持被處理晶圓W。即是，若藉由本實施形態時，可以解決利用以往之多孔性吸盤保持被處理晶圓W之時的問題點。 In this regard, since the holding portion 60 of the present embodiment can hold the wafer W to be processed in a non-contact state, the damage of the avoidance device can be avoided, and the adhesion of the particles can be avoided, and the peeling electrification can be avoided, and the processed wafer W can be held with a specific attractive force. . In other words, according to the present embodiment, it is possible to solve the problem when the wafer W to be processed is held by the conventional porous chuck.

在以上之實施形態之保持部60之外周，如第23圖所示般，即使設置有覆蓋保持部60和被處理晶圓W之間之間隙D的罩蓋400亦可。罩蓋400係被設置在例如保持構件60之全周。在如此之情形下，可以抑制外部之氛圍流出至間隙D，或是氣體從間隙D流出至外部之情形。即是，來自噴出口62之氣體之噴出量和來自吸引口63之氣體之吸引量之收支成為一定。因此，可以在間隙D適當形成從噴出口62朝向吸引口63之氣流F，並可以藉由保持部60適當保持被處理晶圓W。 In the outer circumference of the holding portion 60 of the above embodiment, as shown in Fig. 23, the cover 400 covering the gap D between the holding portion 60 and the wafer W to be processed may be provided. The cover 400 is provided, for example, over the entire circumference of the holding member 60. In such a case, it is possible to suppress the external atmosphere from flowing out to the gap D or the gas flowing out from the gap D to the outside. That is, the amount of discharge of the gas from the discharge port 62 and the amount of suction of the gas from the suction port 63 are constant. Therefore, the airflow F from the discharge port 62 toward the suction port 63 can be appropriately formed in the gap D, and the wafer W to be processed can be appropriately held by the holding portion 60.

再者，在以上之實施形態之保持部60之外周，如第24圖及第25圖所示般，即使設置有被保持部60保持之被處理晶圓W之引導構件410亦可。該引導構件410係在保持部60之外周以等間隔配置於複數處例如8處。再者，引導構件410即使被構成在保持部60之徑向移動自如亦可。然後，於在保持部60和外部之間收授被處理晶圓W之時，引導構件410係被配置在從保持部60分離之位置(第24圖中之實線)。再者，在保持部60保持被處理晶圓W之時，引導構件410被配置在引導該被處理晶圓W之位置(第24圖中之虛線)。在如此之情形下，即使例如被處理晶圓W在保持部60上滑動，亦可以藉由引導構件410防止被處理晶圓W飛出，或滑落。 Further, in the outer circumference of the holding portion 60 of the above embodiment, as shown in Figs. 24 and 25, the guiding member 410 of the wafer W to be processed held by the holding portion 60 may be provided. The guide members 410 are disposed at a plurality of places, for example, eight at equal intervals on the outer circumference of the holding portion 60. Further, the guiding member 410 may be configured to be movable in the radial direction of the holding portion 60. Then, the processed crystal is received between the holding portion 60 and the outside. At the time of the circle W, the guiding member 410 is disposed at a position separated from the holding portion 60 (solid line in Fig. 24). Further, when the holding portion 60 holds the wafer W to be processed, the guiding member 410 is disposed at a position (broken line in FIG. 24) for guiding the wafer W to be processed. In such a case, even if, for example, the processed wafer W slides on the holding portion 60, the processed wafer W can be prevented from flying out or falling off by the guiding member 410.

再者，在以上之實施形態中，複數之噴出口62和複數之吸引口63雖然交互配置成格子狀，但是如上述般，複數之噴出口62和複數之吸引口63之配置可以任意設定。例如第26圖所示般，即使在保持部60之保持面61，複數之噴出口62和複數之吸引口63被配置成放射狀亦可。即使在如此之情形下，也在涵蓋保持面61全面形成從噴出口62朝向吸引口63之氣流F。 Further, in the above embodiment, the plurality of discharge ports 62 and the plurality of suction ports 63 are alternately arranged in a lattice shape. However, as described above, the arrangement of the plurality of discharge ports 62 and the plurality of suction ports 63 can be arbitrarily set. For example, as shown in Fig. 26, even in the holding surface 61 of the holding portion 60, a plurality of discharge ports 62 and a plurality of suction ports 63 may be arranged in a radial shape. Even in such a case, the airflow F from the discharge port 62 toward the suction port 63 is formed integrally in the cover surface 61.

在以上之實施形態中，雖然在剝離裝置30使下部吸盤111在垂直方向及水平方向移動，但是即使使上部吸盤110在垂直方向及水平方向亦可。或是，即使使上部吸盤110和下部吸盤111之雙方在垂直方向及水平方向移動亦可。 In the above embodiment, the lower suction cup 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the upper suction cup 110 may be in the vertical direction and the horizontal direction. Alternatively, both the upper suction cup 110 and the lower suction cup 111 may be moved in the vertical direction and the horizontal direction.

在以上之剝離裝置30中雖然使下部吸盤111在垂直方向及水平方向移動，但是即使使下部吸盤111僅在水平方向移動，使該下部吸盤111之移動速度變化亦可。具體而言，即使使下部吸盤111開始移動之時的移動速度變成低速，之後漸漸增加移動速度亦可。即是，於開始移動下部吸盤111之時，因被處理晶圓W和支撐晶圓S之接著面積大，被處理晶圓W上之裝置易受接著劑G之影響，故下部吸盤111之移動速度變成低速。之後，因隨著被處理晶圓W和支撐晶圓S之接著面積變小，被處理晶圓W上之裝置難受到接著劑G之影響，故漸漸加速下部吸盤111之移動速度。即使在如此之情況下，亦可以迴避裝置和支撐晶圓S之接觸，可以抑制裝置之損傷。 In the above-described peeling device 30, the lower suction cup 111 is moved in the vertical direction and the horizontal direction. However, even if the lower suction cup 111 is moved only in the horizontal direction, the moving speed of the lower suction cup 111 may be changed. Specifically, even if the moving speed at the time when the lower suction cup 111 starts moving becomes a low speed, the moving speed may be gradually increased. That is, at the beginning of moving the lower chuck 111, the wafer W and the supporting wafer S are subsequently processed. Since the area is large, the device on the processed wafer W is susceptible to the adhesive G, so that the moving speed of the lower chuck 111 becomes a low speed. Thereafter, as the area of the wafer W to be processed and the supporting wafer S become smaller, the device on the wafer W to be processed is less affected by the adhesive G, and the moving speed of the lower chuck 111 is gradually accelerated. Even in such a case, the contact between the device and the supporting wafer S can be avoided, and the damage of the device can be suppressed.

再者，在以上之實施形態中，雖然在剝離裝置30使下部吸盤111在垂直方向及水平方向移動，但是於例如被處理晶圓W上之裝置和支撐晶圓S之間之距離充分大之時，即使使下部吸盤111僅在水平方向移動亦可。在如此之情形下，可以回避裝置和支撐晶圓S接觸，並且容易控制下部吸盤111之移動。並且，即使使下部吸盤111僅在垂直方向移動而使被處理晶圓W和支撐晶圓S剝離亦可，即使使下部吸盤111之外周部端部僅在垂直方向移動而剝離被處理晶圓W和支撐晶圓S亦可。 Further, in the above embodiment, the lower suction cup 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the distance between the device on the wafer W to be processed and the supporting wafer S is sufficiently large. At this time, even if the lower suction cup 111 is moved only in the horizontal direction. In such a case, it is possible to avoid contact between the device and the supporting wafer S, and to easily control the movement of the lower chuck 111. Further, even if the lower chuck 111 is moved only in the vertical direction to peel off the wafer W to be processed and the support wafer S, even if the peripheral end portion of the lower chuck 111 is moved only in the vertical direction, the wafer W to be processed is peeled off. And supporting the wafer S is also possible.

在以上之實施形態之剝離裝置30中，即使設置有上部吸盤110和下部吸盤111之間之處理空間的蓋部(無圖示)亦可。在如此之情形下，即使藉由使處理空間成為惰性氣體之氛圍，被處理晶圓W被加熱處理，亦可以抑制該被處理晶圓W上之裝置之氧化。 In the peeling device 30 of the above embodiment, a cover portion (not shown) of the processing space between the upper chuck 110 and the lower chuck 111 may be provided. In such a case, even if the processed wafer W is heated by the atmosphere in which the processing space is an inert gas, the oxidation of the device on the processed wafer W can be suppressed.

再者，在以上之實施形態之剝離裝置30中，可以追隨著下部吸盤111而在水平方向移動，即使設置從複數之孔供給惰性氣體之多孔性平板(無圖示)亦可。在如此之情形下，為了剝離重合晶圓T，使下部吸盤111移動之時，一面追隨著下部吸盤111而使多孔性平板移動，一面對藉由剝離而露出之被處理晶圓W之接合面W_J供給惰性氣體。如此一來，即使被處理晶圓W被加熱處理，亦可以抑制被處理晶圓W之接合面W_J之氧化。 Further, in the peeling device 30 of the above embodiment, the lower suction cup 111 can be moved in the horizontal direction, and a porous flat plate (not shown) for supplying an inert gas from a plurality of holes can be provided. In such a case, in order to peel off the superposed wafer T and move the lower chuck 111, the porous flat plate is moved following the lower chuck 111, and the bonded wafer W is exposed by peeling. The surface W _J supplies an inert gas. In this way, even if the wafer W to be processed is subjected to heat treatment, oxidation of the joint surface W _J of the wafer W to be processed can be suppressed.

並且，在以上之實施形態之剝離裝置30中，雖然在將被處理晶圓W配置在上側，並且將支撐晶圓S配置在下側之狀態下，剝離該些被處理晶圓W和支撐晶圓S，但是即使使被處理晶圓W和支撐晶圓S之上下配置成為相反亦可。 Further, in the peeling device 30 of the above-described embodiment, the processed wafer W and the supporting wafer are peeled off while the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side. S, but the arrangement of the wafer to be processed W and the supporting wafer S may be reversed.

在上述之實施形態中，雖然第1洗淨裝置31和第2洗淨裝置33之洗淨液噴嘴203使用2流體噴嘴，但是洗淨液噴嘴203之型態並不限定於本實施形態，亦可以使用各種噴嘴。例如，作為洗淨液噴嘴203，即使使用將供給洗淨液之噴嘴和供給惰性氣體之噴予以一體化之噴嘴體，或噴霧噴嘴、噴射噴嘴、超音波噴嘴等亦可。再者，因提升洗淨處理之處理量，故即使供給被加熱至例如80℃之洗淨液亦可。 In the above-described embodiment, the second fluid nozzle is used as the cleaning liquid nozzle 203 of the first cleaning device 31 and the second cleaning device 33. However, the shape of the cleaning liquid nozzle 203 is not limited to this embodiment. Various nozzles can be used. For example, as the cleaning liquid nozzle 203, a nozzle body that integrates a nozzle that supplies the cleaning liquid and a spray that supplies an inert gas, a spray nozzle, an injection nozzle, an ultrasonic nozzle, or the like may be used. Further, since the amount of the treatment for the washing treatment is increased, the supply of the washing liquid heated to, for example, 80 ° C can be supplied.

再者，在第1洗淨裝置31和第2洗淨裝置33中，除了洗淨液噴嘴203之外，即使設置供給IPA(異丙醇)之噴嘴亦可。在如此之情況下，於藉由來自洗淨液噴嘴203之洗淨液洗淨被處理晶圓W或支撐晶圓S之後，將被處理晶圓W或支撐晶圓S上之洗淨液置換成IPA。如此一來，被處理晶圓W或支撐晶圓S之接合面W_J、S_J更確實被洗淨。 In addition, in the first cleaning device 31 and the second cleaning device 33, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 203. In this case, after the processed wafer W or the supporting wafer S is washed by the cleaning liquid from the cleaning liquid nozzle 203, the cleaning liquid on the processed wafer W or the supporting wafer S is replaced. Into IPA. As a result, the bonding surfaces W _J and S _{J of the} processed wafer W or the supporting wafer S are more reliably washed.

並且，檢查裝置7之構成並不限定於上述實施形態之構成。檢查裝置7若攝像被處理晶圓W之畫像，而可以檢查該被處理晶圓W上有無接著劑G時，則可以採用各種構成。 Further, the configuration of the inspection device 7 is not limited to the configuration of the above embodiment. When the inspection device 7 captures an image of the wafer W to be processed and can check whether or not the adhesive G is present on the wafer W to be processed, various configurations can be employed.

再者，在上述之實施形態中，雖然針對在後處理站4對被處理晶圓W進行後處理且予以製品化之時進行說明，但是本發明亦可以適用於例如從支撐晶圓剝離在三次元積體技術中被使用的被處理晶圓之時。並且，三次元積體技術係因應近年來之半導體裝置之高積體化之要求的技術，三次元積層該複數半導體裝置，以取代在水平面內配置高積體化之複數之半導體裝置的技術。即使在該三次元積體技術中，也要求被積層之被處理晶圓之薄型化，將該被處理晶圓接合於支撐晶圓而進行特定之處理。 Furthermore, in the above-described embodiment, the post-processing station 4 performs post-processing on the processed wafer W and supplies it to the product. However, the present invention is also applicable to, for example, peeling off from the supporting wafer three times. The time when the wafer to be processed is used in the meta-integration technology. Further, the ternary integrated technology is a technique in which the complex semiconductor device is stacked three-dimensionally in place of a high-integration semiconductor device in a horizontal plane in response to a technique required for the high integration of semiconductor devices in recent years. Even in the three-dimensional integrated technology, it is required to reduce the thickness of the processed wafer to be laminated, and to bond the processed wafer to the supporting wafer to perform a specific process.

以上，雖然一面參照附件圖面一面針對本發明之最佳實施形態予以說明，但是本發明並不限並於如此之例。若為本項技藝者在記載於申請專利範圍之思想範疇內應該能夠思及各種變更例或是修正例，即使針對該些變更例或修正例當然也屬於本發明之技術範圍。本發明並不限定於此例，可採用各種態樣。本發明亦可以適用於基板為晶圓以外之FPD(平面顯示器)、光罩用之光柵等之其他基板之時。 Although the preferred embodiment of the present invention has been described above with reference to the attached drawings, the present invention is not limited to such an example. It is a matter of course that the present invention is within the technical scope of the present invention, and it is to be understood that the modifications and the modifications may be made by those skilled in the art. The present invention is not limited to this example, and various aspects can be employed. The present invention is also applicable to a case where the substrate is an FPD (flat display) other than a wafer, or another substrate such as a grating for a photomask.

1‧‧‧剝離系統 1‧‧‧ peeling system

7‧‧‧檢查裝置 7‧‧‧Checking device

30‧‧‧剝離裝置 30‧‧‧ peeling device

31‧‧‧第1洗淨裝置 31‧‧‧1st cleaning device

32‧‧‧第2搬運機構 32‧‧‧2nd transport mechanism

40‧‧‧接合面洗淨裝置 40‧‧‧ joint cleaning device

41‧‧‧非接合面洗淨裝置 41‧‧‧ Non-joining surface cleaning device

42‧‧‧反轉裝置 42‧‧‧Reversal device

51‧‧‧第3搬運機構 51‧‧‧3rd transport mechanism

60(60a~60f)‧‧‧保持部 60 (60a~60f)‧‧‧ Keeping Department

61‧‧‧保持面 61‧‧‧ Keep face

62‧‧‧噴出口 62‧‧‧Spray outlet

63‧‧‧吸引口 63‧‧‧ attracting mouth

350‧‧‧控制部 350‧‧‧Control Department

400‧‧‧罩蓋 400‧‧‧ Cover

410‧‧‧引導構件 410‧‧‧Guiding components

D‧‧‧間隙 D‧‧‧ gap

F‧‧‧氣流 F‧‧‧Airflow

G‧‧‧接著劑 G‧‧‧Binder

S‧‧‧支撐晶圓 S‧‧‧Support wafer

T‧‧‧重合晶圓 T‧‧‧ coincident wafer

W‧‧‧被處理晶圓 W‧‧‧Processed Wafer

W_J‧‧‧接合面 W _J ‧‧‧ joint surface

W_N‧‧‧非接合面 W _N ‧‧‧non-joined

第1圖為表示與本實施形態有關之剝離系統之構成之概略的俯視圖。 Fig. 1 is a view showing the configuration of a peeling system according to the embodiment. A rough top view.

第2圖為被處理晶圓和支撐晶圓之側面圖。 Figure 2 is a side view of the wafer being processed and the supporting wafer.

第3圖為表示保持部之構成之概略的俯視圖。 Fig. 3 is a plan view showing the outline of the configuration of the holding portion.

第4圖為表示保持部之構成之概略的縱剖面圖。 Fig. 4 is a longitudinal sectional view showing the outline of a configuration of a holding portion.

第5圖為表示剝離裝置之構成之概略的縱剖面圖。 Fig. 5 is a longitudinal cross-sectional view showing the outline of a structure of a peeling device.

第6圖為表示第1洗淨裝置之構成之概略的縱剖面圖。 Fig. 6 is a longitudinal sectional view showing the outline of the configuration of the first cleaning device.

第7圖為表示第1洗淨裝置之構成之概略的橫剖面圖。 Fig. 7 is a schematic cross-sectional view showing the configuration of the first cleaning device.

第8圖為表示第2洗淨裝置之構成之概略的縱剖面圖。 Fig. 8 is a longitudinal sectional view showing the outline of the configuration of the second cleaning device.

第9圖為表示第2搬運裝置之構成之概略的側面圖。 Fig. 9 is a side view showing the outline of the configuration of the second conveying device.

第10圖為表示反轉裝置之構成之概略的縱剖面圖。 Fig. 10 is a longitudinal sectional view showing the outline of the configuration of the inverting device.

第11圖為表示檢查裝置之構成的縱剖面圖。 Fig. 11 is a longitudinal sectional view showing the configuration of an inspection apparatus.

第12圖為表示檢查裝置之構成之概略的橫剖面圖。 Fig. 12 is a schematic cross-sectional view showing the configuration of an inspection apparatus.

第13圖為表示剝離處理之主要工程的流程圖。 Fig. 13 is a flow chart showing the main construction of the peeling process.

第14圖為表示在剝離裝置中，以上部吸盤和下部吸盤保持重合晶圓之樣子的說明圖。 Fig. 14 is an explanatory view showing a state in which the upper suction cup and the lower suction cup are kept superposed on the wafer in the peeling device.

第15圖為表示使剝離裝置之下部吸盤在垂直方向及水平方向移動之樣子的說明圖。 Fig. 15 is an explanatory view showing a state in which the suction cup of the lower portion of the peeling device is moved in the vertical direction and the horizontal direction.

第16圖為表示在剝離裝置中剝離被處理晶圓和支撐晶圓之樣子的說明圖。 Fig. 16 is an explanatory view showing a state in which the wafer to be processed and the supporting wafer are peeled off in the peeling device.

第17圖為表示從剝離裝置之上部吸盤將被處理晶圓收授於第2搬運裝置之保持部之樣子的說明圖。 Fig. 17 is an explanatory view showing a state in which a wafer to be processed is received from a holding portion of the second conveying device from the upper suction cup of the peeling device.

第18圖為表示從第2搬運裝置之保持部將被處理晶圓收授於第1洗淨裝置之吸盤之樣子的說明圖。 FIG. 18 is an explanatory view showing a state in which the wafer to be processed is received from the holding portion of the second conveying device to the suction cup of the first cleaning device.

第19圖為表示從第3搬運裝置之保持部將被處理晶圓收授於反轉裝置之下部吸盤之樣子的說明圖。 Fig. 19 is an explanatory view showing a state in which the wafer to be processed is received from the holding portion of the third conveying device to the lower portion of the inverting device.

第20圖為表示從反轉裝置之下部吸盤將被處理晶圓收授於上部吸盤的之樣子的說明圖。 Fig. 20 is an explanatory view showing a state in which the wafer to be processed is received from the lower suction cup from the lower suction cup of the reversing device.

第21圖為表示從反轉裝置之下部吸盤將被處理晶圓收授於上部吸盤的之狀態的說明圖。 Fig. 21 is an explanatory view showing a state in which the wafer to be processed is received from the upper chuck from the lower suction cup of the reversing device.

第22圖為表示從反轉裝置之上部吸盤將被處理晶圓收授於第3搬運裝置之保持部之狀態的說明圖。 Fig. 22 is an explanatory view showing a state in which the wafer to be processed is received in the holding portion of the third conveying device from the upper suction cup of the reversing device.

第23圖為表示與其他本實施形態有關之保持部之構成之概略的側面圖。 Fig. 23 is a side view showing the outline of a configuration of a holding portion according to another embodiment of the present invention.

第24圖為表示與其他本實施形態有關之保持部之構成之概略的側面圖。 Fig. 24 is a side view showing the outline of a configuration of a holding portion according to another embodiment of the present invention.

第25圖為表示與其他本實施形態有關之保持部之構成之概略的俯視圖。 Fig. 25 is a plan view showing the outline of a configuration of a holding portion according to another embodiment of the present invention.

第26圖為表示與其他本實施形態有關之保持部之構成之概略的俯視圖。 Fig. 26 is a plan view showing the outline of a configuration of a holding portion according to another embodiment of the present invention.

60‧‧‧保持部 60‧‧‧ Keeping Department

61‧‧‧保持面 61‧‧‧ Keep face

62‧‧‧噴出口 62‧‧‧Spray outlet

63‧‧‧吸引口 63‧‧‧ attracting mouth

F‧‧‧氣流 F‧‧‧Airflow

Claims

一種剝離系統，將以接著劑接合被處理基板和支撐基板的重合基板剝離成被處理基板和支撐基板，該剝離系統之特徵為具有：於搬運或處理從重合基板剝離之被處理基板之時，以非接觸狀態保持該被處理基板之保持部，在上述保持部之表面形成有噴出氣體之複數之噴出口和吸引氣體之複數之吸引口。 A peeling system for peeling a superposed substrate on which a substrate to be processed and a support substrate are bonded by an adhesive agent into a substrate to be processed and a support substrate, the peeling system being characterized by: when transporting or processing the substrate to be processed which is peeled off from the superposed substrate, The holding portion of the substrate to be processed is held in a non-contact state, and a plurality of ejection ports for ejecting gas and a plurality of suction ports for attracting gas are formed on the surface of the holding portion.

如申請專利範圍第1項所記載之剝離系統，其中上述複數之噴出口和上述複數之吸引口，各在上述保持部之表面，被形成涵蓋對應於所保持之被處理基板的位置全體。 The peeling system according to claim 1, wherein the plurality of discharge ports and the plurality of suction ports are formed on the surface of the holding portion so as to cover the entire position corresponding to the substrate to be processed.

如申請專利範圍第1或2項所記載之剝離系統，其中在上述保持部之外周設置有覆蓋上述保持部和被保持於該保持部之被處理基板之間之間隙的罩蓋。 The peeling system according to claim 1 or 2, wherein a cover covering the gap between the holding portion and the substrate to be processed held by the holding portion is provided on the outer circumference of the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中在上述保持部之外周設置有被保持於上述保持部之被處理基板之引導構件。 The peeling system according to the first or second aspect of the invention, wherein the guide member of the substrate to be processed held by the holding portion is provided on the outer circumference of the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中具有搬運從重合基板剝離之被處理基板的搬運裝置，上述搬運裝置具備上述保持部。 A peeling system according to claim 1 or 2, further comprising a conveying device that conveys a substrate to be processed which is peeled off from the superposed substrate, wherein the conveying device includes the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中具有使從重合基板剝離之被處理基板之表背面反轉之反轉裝置，上述反轉裝置具備上述保持部。 The peeling system according to the first or second aspect of the invention, comprising the inverting device for reversing the front and back surfaces of the substrate to be processed which is peeled off from the superposed substrate, wherein the inverting device includes the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中具有將重合基板剝離成被處理基板和支撐基板之剝離裝置；上述剝離裝置具備上述保持部。 The peeling system according to claim 1 or 2, further comprising a peeling device for peeling the superposed substrate into a substrate to be processed and a supporting substrate; wherein the peeling device includes the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中具有洗淨從重合基板剝離之被處理基板的洗淨裝置，上述洗淨裝置具備上述保持部。 The peeling system according to the first or second aspect of the invention, comprising a cleaning device for cleaning a substrate to be processed which is peeled off from the superposed substrate, wherein the cleaning device includes the holding portion.

如申請專利範圍第1或2項所記載之剝離系統，其中具有檢查從重合基板剝離之被處理基板的檢查裝置，上述檢查裝置具備上述保持部。 The peeling system according to claim 1 or 2, further comprising an inspection device for inspecting a substrate to be processed which is peeled off from the superposed substrate, wherein the inspection device includes the holding portion.

一種剝離方法，係將以接著劑接合被處理基板和支撐基板的重合基板剝離成被處理基板和支撐基板，該剝離方法之特徵為具有：於搬運或處理從重合基板剝離之被處理基板之時，對該被處理基板，從形成在保持部之表面的複數之噴出口噴出氣體，並且從形成在該保持部之表面的複數之吸引口吸引氣體，而在上述保持部以非接觸狀態保持被處理基板。 A peeling method is a method of peeling a superposed substrate on which a substrate to be processed and a support substrate are bonded by an adhesive into a substrate to be processed and a support substrate, the peeling method characterized by having a process of transporting or processing a substrate to be processed which is peeled off from the overlapped substrate The substrate to be processed is ejected from a plurality of ejection ports formed on the surface of the holding portion, and sucked from a plurality of suction ports formed on the surface of the holding portion The gas is introduced, and the substrate to be processed is held in the non-contact state in the holding portion.

如申請專利範圍第10項所記載之剝離方法，其中上述複數之噴出口和上述複數之吸引口，各在上述保持部之表面，被形成涵蓋對應於所保持之被處理基板的位置全體。 The peeling method according to claim 10, wherein the plurality of discharge ports and the plurality of suction ports are formed on the surface of the holding portion so as to cover the entire position corresponding to the substrate to be processed.

如申請專利範圍第10或11項所記載之剝離方法，其中在搬運從重合基板剝離之被處理基板的搬運裝置中，以上述保持部保持該被處理基板。 The peeling method according to claim 10, wherein in the conveying device that transports the substrate to be processed which is peeled off from the superposed substrate, the substrate to be processed is held by the holding portion.

如申請專利範圍第10或11項所記載之剝離方法，其中在使從重合基板剝離之被處理基板之表背面反轉的反轉裝置中，以上述保持部保持該被處理基板。 The peeling method according to claim 10, wherein in the inverting device that reverses the front and back surfaces of the substrate to be processed which is peeled off from the superposed substrate, the substrate to be processed is held by the holding portion.

如申請專利範圍第10或11項所記載之剝離方法，其中在將重合基板剝離成被處理基板和支撐基板的剝離裝置中，以上述保持部保持該被處理基板。 The peeling method according to claim 10, wherein in the peeling device for peeling the superposed substrate into the substrate to be processed and the supporting substrate, the substrate to be processed is held by the holding portion.

如申請專利範圍第10或11項所記載之剝離方法，其中在洗淨從重合基板剝離之被處理基板的洗淨裝置中，以上述保持部保持該被處理基板。 The peeling method according to claim 10, wherein in the cleaning device for cleaning the substrate to be processed which is peeled off from the superposed substrate, the substrate to be processed is held by the holding portion.

如申請專利範圍第10或11項所記載之剝離方法，其中在檢查從重合基板剝離之被處理基板的檢查裝置中，以上述保持部保持該被處理基板。 The peeling method according to claim 10 or 11, wherein in the inspection apparatus for inspecting the substrate to be processed which is peeled off from the overlapped substrate, The substrate to be processed is held by the holding portion.

一種電腦可讀取之記憶媒體，為了藉由剝離系統實行如申請專利範圍第10項所記載之剝離方法，儲存有在控制該剝離系統之控制部之電腦上動作之程式。 A computer-readable memory medium in which a stripping method as described in claim 10 of the patent application is carried out by a peeling system, and a program for operating on a computer that controls the control unit of the stripping system is stored.