TW201316419A - 用於半導體裝置之不連續圖案結合及相關系統及方法 - Google Patents

用於半導體裝置之不連續圖案結合及相關系統及方法 Download PDF

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TW201316419A
TW201316419A TW101130522A TW101130522A TW201316419A TW 201316419 A TW201316419 A TW 201316419A TW 101130522 A TW101130522 A TW 101130522A TW 101130522 A TW101130522 A TW 101130522A TW 201316419 A TW201316419 A TW 201316419A
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substrate
solid state
pattern
bonding
bonding material
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TWI497612B (zh
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Scott D Schellhammer
Vladimir Odnoblyudov
Jeremy S Frei
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Micron Technology Inc
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Abstract

本文中揭示用於半導體裝置之不連續結合。根據一特定實施例，一種裝置包含一第一基板及一第二基板，其中該第一基板及該第二基板中之至少一者具有複數個固態傳感器。該第二基板可包含複數個突出部及複數個中間區域，且可藉助一不連續結合而結合至該第一基板。個別固態傳感器可至少部分地安置於對應中間區域內，且該不連續結合可包含將該等個別固態傳感器結合至對應中間區域之封閉端之結合材料。本文中揭示用於半導體裝置之不連續結合之相關方法及系統。

Description

用於半導體裝置之不連續圖案結合及相關系統及方法
本發明技術一般而言係針對用於半導體裝置之不連續結合以及相關系統及方法。根據本發明技術之不連續結合適合於包含發光二極體之固態傳感器。
固態傳感器裝置包含發光二極體(「LED」)、有機發光二極體(「OLED」)及聚合物發光二極體(「PLED」)。固態傳感器裝置之能量效率及小大小已導致此等裝置在眾多產品中之普及。電視、電腦監視器、行動電話、數位相機及其他電子裝置利用LED進行影像產生、物件照明(例如，相機閃光)及/或背光照明。LED亦用於告示板、室內及室外照明、交通燈及其他類型之照明。用於此等半導體裝置之經改良製作技術具有降低之裝置成本及增加之裝置效率兩者。
用於固態傳感器裝置及其他半導體裝置之製造程序通常包含使用多個基板。在一種習用方法中，使用半導體製作技術來在一裝置基板上構造LED。然後使用一結合材料來將該裝置基板結合至一載體基板，其中LED夾在其之間。然後可移除該裝置基板，且可進一步處理具有所附著LED之該載體基板以單粒化個別LED。
儘管此製作方法可產生合理結果，但結合程序可對基板及所附著LED產生顯著應力。在單粒化程序期間，此等應力可使基板撓曲及彎曲，從而致使翹曲、分層或其他分 離，及/或可導致未對準。另外，透過結合材料及基板兩者來單粒化LED可形成顯著應力且使單粒化程序複雜化。因此，需要一種可避免此等限制之固態傳感器裝置及製作方法。
下文闡述用於半導體裝置之晶圓級總成及相關系統及方法之數個實施例之特定細節。下文之該等實施例包含固態傳感器(「SST」)。然而，當前所揭示技術之其他實施例可包含其他半導體裝置，諸如光電池、二極體、電晶體、積體電路等。術語「SST」通常指代包含作為將電能轉換成可見光譜、紫外線光譜、紅外線光譜及/或其他光譜中之電磁輻射之作用介質之一半導體材料之固態裝置。舉例而言，SST裝置包含固態光發射器(例如，LED、雷射二極體等)及/或除電燈絲、電漿或氣體以外的其他發射源。術語SST亦可包含將電磁輻射轉換成電力之固態裝置。另外，取決於其中使用術語「基板」之上下文，術語「基板」可指代一晶圓級基板或指代一經單粒化裝置級基板。熟習此項技術者亦將理解，本發明技術可具有額外實施例，且可在沒有下文參考圖1至圖13所闡述之實施例之細節中之數個細節之情形下實踐本發明技術。
圖1係根據本發明技術之一實施例之具有一裝置基板102、一傳感器結構104及一第一結合金屬106之一晶圓級總成或裝置總成100之一部分之一部分示意性剖面圖。圖2係根據本發明技術之一實施例之具有一載體基板208及一 第二結合金屬206之一晶圓級總成或載體總成200之一部分之一部分示意性剖面圖。可使用各種半導體製作技術來構造圖1及圖2之晶圓級總成。舉例而言，裝置基板102及載體基板208可由矽、多晶氮化鋁、藍寶石及/或包含金屬及非金屬兩者之其他適合材料製成。另外，裝置基板102及/或載體基板208可係一複合基板或一工程基板。在此等實施例中，工程基板可包含結合在一起之兩種或兩種以上材料及/或經挑選或經工程設計以改良裝置總成100或載體總成200之製作或總成之材料。傳感器結構104可經由包含以下各項之多種程序形成：金屬有機化學汽相沈積(「MOCVD」)、分子束磊晶(「MBE」)、液相磊晶(「LPE」)及/或氫化物汽相磊晶(「HVPE」)。在其他實施例中，可使用其他適合之技術(例如，磊晶生長技術)來形成傳感器結構104之至少一部分。圖1及圖2之第一結合金屬106及第二結合金屬206可由包含銅、鋁、金、錫、鎳、鈀、銦之多種適合金屬及/或包含此等及/或其他金屬之組合之各種合金中之任一者構成。在某些實施例中，第一結合金屬106及第二結合金屬206可由相同金屬或合金構成。在其他實施例中，第一結合金屬106及第二結合金屬206可由不同金屬或合金構成。此外，在又一些實施例中，可使用除一金屬以外的一結合材料替代結合金屬106及206。舉例而言，可使用各種半導體黏合劑作為一結合材料。
圖3係根據本發明技術之一實施例在已經圖案化之後的圖1之裝置總成100之一部分示意性剖面圖。在所圖解說明 之實施例中，裝置總成100中所形成之圖案包含藉由移除第一結合金屬106及傳感器結構104之區段而形成之複數個溝渠310。圖4係圖3之裝置總成100之一部分示意性俯視平面圖。一起參考圖3及圖4，溝渠310可形成將傳感器結構104分離成複數個固態傳感器(「SST」)312之一網格。溝渠310及SST 312之圖案經塑形而類似於一經反轉格柵形狀，其中溝渠310之區段或片段環繞SST 312中之每一者。可藉由將一遮罩(未展示)定位於SST 312上方之區上方及蝕刻(例如，濕式蝕刻、乾式蝕刻等)第一結合金屬106及傳感器結構104之所暴露區段而形成溝渠310。在其他實施例中，可使用其他適合之半導體製作技術來形成溝渠310。
圖5係根據本發明技術之一實施例之具有一圖案之一經圖案化載體總成500之一部分示意性剖面圖。在所圖解說明之實施例中，載體總成500中之圖案包含由***部分或突出部516分離之複數個中間區域(例如，凹入部514)。圖6係圖5之載體總成500之一部分示意性俯視平面圖。一起參考圖5及圖6，凹入部514及突出部516形成一格柵圖案，其中突出部516在所有側上環繞個別凹入部514。如下文將更詳細地闡述，突出部516可形成可用於單粒化SST 312之分割通道617。在某些實施例中，凹入部514可經組態以可具有自約5微米至約15微米之一深度。在其他實施例中，凹入部514之深度可小於或大於此範圍中所包含之深度。可以類似於用於在裝置總成100中形成溝渠310之彼方式之一方式形成凹入部514。舉例而言，可使用一遮罩(未展示)來 覆蓋載體基板208之突出部516，且可蝕刻載體基板208之所曝露區段以形成凹入部514。凹入部514可包含由餘留載體基板208及/或安置於凹入部514中之第二結合金屬206至少部分地界定之封閉端515以促進與裝置總成100結合。
圖7係在結合之前處於對準中之圖3及圖4之裝置總成100及圖5及圖6之載體總成500之一部分示意性剖面圖。在所圖解說明之實施例中，在結合之前，裝置總成100之逆圖案格柵圖案與載體總成500之格柵圖案係對準的。特定而言，載體總成500之突出部516係對準的以待***至溝渠310中，而具有第一結合金屬106之所附著區段之SST 312係對準的以待***至凹入部514中。光學對準技術及/或其他半導體製作技術可用於在兩個正交方向上將裝置總成100與載體總成500對準，且可用於將裝置總成100及載體總成500定位於平行平面中以促進此等總成之間的一致結合。另外，本文中所闡述之總成之圖案形成有適合製作公差以允許總成配合。舉例而言，突出部516可比溝渠310稍微窄以避免此等組件之間的一干擾。
圖8係根據本發明技術之一實施例組態之包含圖7之裝置總成100及載體總成500之一經結合總成800之一部分示意性剖面圖。一起參考圖7及圖8，經結合總成800可藉由在對準之後將裝置總成100與載體總成500組合在一起而形成。當將裝置總成100與載體總成500完全組合在一起以形成經結合總成800時，在載體總成500之個別凹入部514內至少部分地含納裝置總成100之個別SST 312。裝置總成 100之第一結合金屬106與載體總成500之第二結合金屬206組合以形成一結合金屬結構818，結合金屬結構818將SST312結合至凹入部514。結合金屬結構818可在一高溫度及壓力環境中形成以促進結合。所得經結合總成800包含由介於SST 312之間的個別結合區段或處於片段821及凹入部514中之結合金屬結構818構成之一不連續結合820。在特定實施例中，分離凹入部514的載體總成500之突出部516未結合至裝置總成100，且每一個別突出部516表示介於不連續結合820之片段821之間的一不連續處。
圖9係根據本發明技術之一實施例之在已移除裝置基板102(圖9中未展示)之後的圖8中所展示之經結合總成800之一部分示意性剖面圖。裝置基板102可藉由包含背面研磨、蝕刻、化學機械平坦化及/或其他適合移除方法之各種半導體製作技術來移除。在已移除裝置基板102之後，經結合總成800包含由突出部516分離之個別SST 312。圖6中之載體總成500之俯視圖中所展示，突出部516延續跨越經結合總成800以形成分割通道617。然後使用一分割鋸或其他單粒化工具(圖9中未展示)來沿分割通道617切穿載體基板208以單粒化SST 312。沿通道617分割經結合總成不需要鋸來單粒化一種以上材料，例如，鋸僅需要切穿載體基板208。割穿一單個材料可減小經結合總成800上之應力且可限制未對準之可能性及單粒化程序所致之缺陷。另外，本發明技術藉由減小或消除對單粒化一高應力結合材料之需要來減小經結合總成800上之應力。
圖10係根據本發明技術之一實施例之在結合之前處於對準中的圖1之裝置總成100及一載體總成1000之一部分示意性剖面圖。類似於圖5及圖6之載體總成500，載體總成1000包含由通道或突出部1016分離之複數個凹入部1014。凹入部1014及突出部1016形成一格柵圖案，其中突出部1016在所有側上環繞個別凹入部1014。在所圖解說明之實施例中，載體總成1000中之凹入部1014可用第二結合金屬206實質上填充以促進與裝置總成100結合。
圖11係根據本發明技術之一實施例組態之包含圖10之裝置總成100及載體總成1000之一經結合總成1100之一部分示意性剖面圖。一起參考圖10及圖11，在對準之後，裝置總成100與載體總成1000組合在一起且結合至載體總成1000。所得經結合總成1100包含由裝置總成100之第一結合金屬106及載體總成1000之第二結合金屬206形成之一結合金屬結構1018。結合金屬結構1018藉助一不連續結合1120將裝置總成100之傳感器結構104結合至載體基板208。不連續結合1120包含介於傳感器結構104與凹入部1014之間的結合片段1121。載體總成1000之突出部1016未結合至裝置總成100。因此每一個別突出部1016表示介於不連續結合1120之結合片段1121之間的一不連續處。
圖12係在結合之前處於對準中之圖3及圖4之裝置總成100及圖2之載體總成200之一部分示意性剖面圖。如先前所論述，溝渠310及SST 312界定一經反轉格柵形狀，其中溝渠310之區段環繞SST 312中之每一者。
圖13係根據本發明技術之一實施例組態之包含圖12之裝置總成100及載體總成200之一經結合總成1300之一部分示意性剖面圖。如圖13中所展示，裝置總成100與載體總成200可對準且組合在一起以形成經結合總成1300。結合裝置總成100與載體總成200將第一結合金屬106與第二結合金屬206組合以形成一結合金屬結構1318。因此裝置總成100之SST 312藉助結合金屬結構1318而結合至載體總成200。在所圖解說明之經結合總成1300中，溝渠310(或溝渠310之至少部分)保持開放，從而形成一空隙或間隙。經結合總成1300藉此包含由介於SST 312與載體總成200之間的結合片段1321構成之一不連續結合1320。分離SST 312之溝渠310表示介於不連續結合1320之結合片段1321之間的一不連續處。
習用半導體製作技術通常產生跨越晶圓之可致使晶圓彎曲或翹曲之顯著應力。此又可致使晶圓組件分離及/或變得不對準，從而可能形成組件中之中間或延遲缺陷。在其中應力可在較大距離上累積之較大晶圓中，此等負效應可尤其明顯。與前述習用技術相比，本發明之不連續結合降低跨越經結合總成之機械應力。如上文所論述，在經結合總成800中，舉例而言，載體總成500之突出部516未結合至裝置總成100，且突出部516表示不連續結合820中之不連續處。該等不連續處可降低跨越經結合總成800之應力且減小或消除彎曲及翹曲。經結合總成1100及1300包含類似應力減小不連續結合。因此，可在較大基板上構造本發 明之經結合總成，此乃因針對一既定大小基板較低應力可產生較小彎曲及翹曲量。在一項實施例中，舉例而言，可在八英吋直徑基板上構造經結合總成。此等較大晶圓產生在較小晶圓情形下不可得到之規模經濟。儘管在較大直徑基板情形下本發明技術之系統及方法之優點可更明顯，但該等優點亦可存在於較小基板中。因此，在其他實施例中，可在較小直徑基板以及較大直徑基板上構造經結合總成。
本發明技術之實施例之另一優點係可在製作程序期間含納第二結合金屬206。舉例而言，凹入部514可含納突出部516內之第二結合金屬206。藉由在凹入部514內含納第二結合金屬206，可將第二結合金屬206之分佈限於僅其中需要該第二結合金屬用於結合之區。因此，可防止第二結合金屬206遷移至載體總成500之其他區及藉由遷移至未用於結合之區而干擾其他組件(此可致使缺陷，諸如短路)或產生浪費。藉由減少缺陷及浪費，藉助其製造SST及/或其他半導體裝置的根據本發明之實施例之系統及方法增加效率及生產量。
根據前述內容，將瞭解，儘管本文已出於圖解說明之目的闡述了本技術之具體實施例，但可做出各種修改，此並不背離本發明。舉例而言，本文中所揭示之載體總成、裝置總成及經結合總成可包含具有不同大小及/或形狀之溝渠、經圖案化凹入部及/或突出部。舉例而言，在某些實施例中可使用矩形凹入部及SST。另外，可使用不同材料 替代本文中所揭示之彼等材料，或可添加或移除額外組件。舉例而言，可在結合之前將一結合材料施加至載體總成或裝置總成中之僅一者。在特定實施例中，溝渠環繞一單個SST。在其他實施例中，由溝渠封圍之最小區域可包含多個SST。舉例而言，可在其中不藉助一結合不連續處將多個SST組合在一起不形成一不可接受翹曲及/或其他效應之例項及/或其中在分割之後SST保持在一起作為一功能單元之例項中使用此一技術。此外，雖然上文在某些實施例之上下文中已闡述了與彼等實施例相關之各種優點及特徵，但其他實施例亦可展現此等優點及/或特徵，且並非所有實施例需要必須將此等優點及/或特徵展現為歸屬於本發明技術之範疇內。因此，本發明及相關技術可囊括本文中未明確展示或闡述之其他實施例。
100‧‧‧晶圓級總成/裝置總成
102‧‧‧裝置基板
104‧‧‧傳感器結構
106‧‧‧第一結合金屬/結合金屬
200‧‧‧晶圓級總成/載體總成
206‧‧‧第二結合金屬/結合金屬
208‧‧‧載體基板
310‧‧‧溝渠
312‧‧‧固態傳感器
500‧‧‧經圖案化載體總成/載體總成
514‧‧‧凹入部
515‧‧‧封閉端
516‧‧‧***部分/突出部
617‧‧‧分割通道/通道
800‧‧‧經結合總成
818‧‧‧結合金屬結構
820‧‧‧不連續結合
821‧‧‧結合區段/片段
1000‧‧‧載體總成
1014‧‧‧凹入部
1016‧‧‧突出部
1018‧‧‧結合金屬結構
1100‧‧‧經結合總成
1120‧‧‧不連續結合
1121‧‧‧結合片段
1300‧‧‧經結合總成
1318‧‧‧結合金屬結構
1320‧‧‧不連續結合
1321‧‧‧結合片段
圖1係根據本發明技術之一實施例組態之一裝置總成之一部分之一部分示意性剖面圖。
圖2係根據本發明技術之一實施例組態之一載體總成之一部分之一部分示意性剖面圖。
圖3係根據本發明技術之一實施例之具有一圖案的圖1之裝置總成之一部分示意性剖面圖。
圖4係圖3之裝置總成之一部分示意性俯視平面圖。
圖5係根據本發明技術之一實施例組態之一經圖案化載體總成之一部分示意性剖面圖。
圖6係圖5之載體總成之一部分示意性俯視平面圖。
圖7係在結合之前經定位處於對準中之圖3之裝置總成及圖5之載體總成之一部分示意性剖面圖。
圖8係根據本發明技術之一實施例組態之一經結合總成之一部分示意性剖面圖。
圖9係根據本發明技術之一實施例之在已移除裝置基板之後的圖8之經結合總成之一部分示意性剖面圖。
圖10係在形成根據本發明技術之一實施例之一經結合總成之前的一裝置總成及一載體總成之一部分示意性剖面圖。
圖11係根據本發明技術之一實施例組態之一經結合總成之一部分示意性剖面圖。
圖12係在形成根據本發明技術之另一實施例之一經結合總成之前的一裝置總成及一載體總成之一部分示意性剖面圖。
圖13係根據本發明技術之一實施例組態之一經結合總成之一部分示意性剖面圖。
100‧‧‧晶圓級總成/裝置總成
102‧‧‧裝置基板
106‧‧‧第一結合金屬/結合金屬
206‧‧‧第二結合金屬/結合金屬
208‧‧‧載體基板
312‧‧‧固態傳感器
500‧‧‧經圖案化載體總成/載體總成
514‧‧‧凹入部
800‧‧‧經結合總成
818‧‧‧結合金屬結構
820‧‧‧不連續結合
821‧‧‧結合區段/片段

Claims (21)

  1. 一種半導體裝置，其包括：一第一基板；一第二基板，其具有複數個突出部及複數個中間區域，其中個別中間區域由相鄰突出部限界且具有一封閉端，該第一基板及該第二基板中之至少一者具有複數個固態傳感器，其中個別固態傳感器至少部分地安置於對應中間區域內；及一不連續結合，其介於該第一基板與該第二基板之間，該不連續結合包括在該等中間區域之該封閉端處結合至該第二基板之一結合材料，其中該等固態傳感器安置於該第一基板與該結合材料之間。
  2. 如請求項1之半導體裝置，其中該複數個中間區域及該等突出部在該第二基板處形成一第一圖案，且其中該複數個固態傳感器及該結合材料形成一第二圖案，該第二圖案係該第一圖案之逆圖案。
  3. 如請求項2之半導體裝置，其中該結合材料包括一結合金屬，且其中該第一圖案包括一格柵圖案且該第二圖案包括一經反轉格柵圖案。
  4. 如請求項1之半導體裝置，其中該複數個固態傳感器包括發光二極體。
  5. 一種經結合總成，其包括：一第一基板，其承載一傳感器結構及一結合材料，其中該傳感器結構安置於該第一基板與該結合材料之間；及 一第二基板，該第二基板具有形成一圖案之一系列突出部，其中該第一基板藉助介於該等突出部之間的區域中之一不連續結合而結合至該第二基板。
  6. 如請求項5之經結合總成，其中該不連續結合包括由未結合至該第二基板之該結合材料之區段分離的結合至該第二基板之該結合材料之一系列區段。
  7. 如請求項5之經結合總成，其中該結合材料包括一結合金屬，且其中該傳感器結構包括一發光二極體。
  8. 一種半導體裝置，其包括：一第一基板，其承載一結合材料及安置於該第一基板與該結合材料之間的複數個固態傳感器；及一第二基板，其藉助一不連續結合而結合至該第一基板，該不連續結合包括複數個經間隔開之結合片段，其中個別結合片段包含結合至該等固態傳感器及該第二基板兩者之該結合材料之一部分。
  9. 如請求項8之半導體裝置，其中該第二基板包含至少部分地界定該第二基板中之複數個區域之突出部，其中個別區域由該結合材料部分地佔據且由該複數個固態傳感器中之一者部分地佔據，其中該等突出部在相鄰固態傳感器之間形成通道之一網格圖案。
  10. 如請求項8之半導體裝置，其中該等個別結合片段由相鄰固態傳感器之間的一間隙所至少部分地界定之空隙空間之區段分離。
  11. 一種半導體裝置，其包括： 一載體基板，其中該載體基板包含由中間區域分離之複數個突出部；及複數個固態傳感器，其中個別固態傳感器至少部分地安置於對應中間區域內，其中該等個別固態傳感器藉助結合材料結合至該載體基板。
  12. 如請求項11之半導體裝置，其中該等突出部及該等中間區域在該載體基板中形成一直線圖案。
  13. 如請求項11之半導體裝置，其中該複數個固態傳感器包括發光二極體。
  14. 一種用於製作一半導體裝置之方法，該方法包括：在一裝置基板中形成複數個固態傳感器；在一載體基板中形成複數個凹入部；及藉助一不連續結合將該載體基板結合至該裝置基板，其中該不連續結合包括介於個別固態傳感器與對應個別凹入部之一封閉端之間的結合材料。
  15. 如請求項14之方法，其中該複數個凹入部形成一第一圖案且該複數個固態傳感器形成一第二圖案，該第二圖案係該第一圖案之逆圖案，且其中將該載體基板結合至該裝置基板包含：將該第一圖案與該第二圖案對準，並將該裝置基板與該載體基板組合在一起。
  16. 如請求項15之方法，其中將該第一圖案與該第二圖案對準包含：將該第一圖案與該第二圖案光學對準。
  17. 如請求項14之方法，其進一步包括：藉由將該結合材料侷限於該複數個凹入部而至少限制該結合材料跨越該載 體基板流動。
  18. 如請求項14之方法，其中該等個別凹入部由該載體基板之突出部分離，且其中該等突出部形成通道，該方法進一步包括：在不移除該複數個固態傳感器之情形下移除該裝置基板；及沿該等通道分割該載體基板以形成複數個個別半導體裝置。
  19. 一種用於製作一半導體總成之方法，該方法包括：將具有複數個凹入部之一載體基板與具有複數個固態傳感器之一裝置基板對準；在該複數個凹入部中容納一結合材料；及在於該複數個凹入部中容納該結合材料的同時，藉助一不連續結合將該裝置基板結合至該載體基板。
  20. 如請求項19之方法，其中將該裝置基板結合至該載體基板包含：將該複數個固態傳感器與該複數個凹入部光學對準。
  21. 如請求項19之方法，其中藉助一不連續結合將該裝置基板結合至該載體基板包含：藉由藉助該結合材料將個別固態傳感器結合至一對應凹入部之一封閉端而形成該不連續結合之個別片段；將該載體基板之突出部***至溝渠中，其中該等溝渠環繞該等個別固態傳感器，且其中該等突出部至少部分地界定該不連續結合中之不連續處；及 在於該複數個凹入部中容納該結合材料的同時，升高該載體基板及該裝置基板之一溫度。
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