TW201251244A - Lift-off processing for formation of isolation regions in laser diode structures - Google Patents
Lift-off processing for formation of isolation regions in laser diode structures Download PDFInfo
- Publication number
- TW201251244A TW201251244A TW101118371A TW101118371A TW201251244A TW 201251244 A TW201251244 A TW 201251244A TW 101118371 A TW101118371 A TW 101118371A TW 101118371 A TW101118371 A TW 101118371A TW 201251244 A TW201251244 A TW 201251244A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- laser diode
- patterned
- axially extending
- waveguide structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161490753P | 2011-05-27 | 2011-05-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201251244A true TW201251244A (en) | 2012-12-16 |
Family
ID=47259756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101118371A TW201251244A (en) | 2011-05-27 | 2012-05-23 | Lift-off processing for formation of isolation regions in laser diode structures |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140079087A1 (ja) |
JP (1) | JP2014515563A (ja) |
KR (1) | KR20140030197A (ja) |
CN (1) | CN103563098A (ja) |
TW (1) | TW201251244A (ja) |
WO (1) | WO2012166424A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3585817B2 (ja) * | 2000-09-04 | 2004-11-04 | ユーディナデバイス株式会社 | レーザダイオードおよびその製造方法 |
DE10312214B4 (de) * | 2003-03-19 | 2008-11-20 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge |
KR20040092764A (ko) * | 2003-04-29 | 2004-11-04 | 삼성전자주식회사 | 자기정렬을 이용한 반도체 레이저 다이오드 및 그 제조방법 |
KR100818522B1 (ko) * | 2004-08-31 | 2008-03-31 | 삼성전기주식회사 | 레이저 다이오드의 제조방법 |
US7598104B2 (en) * | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
US7713769B2 (en) * | 2007-12-21 | 2010-05-11 | Tekcore Co., Ltd. | Method for fabricating light emitting diode structure having irregular serrations |
CN102005517B (zh) * | 2009-08-26 | 2013-09-18 | 首尔Opto仪器股份有限公司 | 利用激光剥离技术制造发光二极管的方法和激光剥离装置 |
-
2012
- 2012-05-22 KR KR1020137030651A patent/KR20140030197A/ko not_active Application Discontinuation
- 2012-05-22 WO PCT/US2012/038928 patent/WO2012166424A1/en active Application Filing
- 2012-05-22 CN CN201280025575.8A patent/CN103563098A/zh active Pending
- 2012-05-22 US US14/119,607 patent/US20140079087A1/en not_active Abandoned
- 2012-05-22 JP JP2014513557A patent/JP2014515563A/ja not_active Abandoned
- 2012-05-23 TW TW101118371A patent/TW201251244A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2012166424A1 (en) | 2012-12-06 |
US20140079087A1 (en) | 2014-03-20 |
JP2014515563A (ja) | 2014-06-30 |
KR20140030197A (ko) | 2014-03-11 |
CN103563098A (zh) | 2014-02-05 |
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