TW201251244A - Lift-off processing for formation of isolation regions in laser diode structures - Google Patents

Lift-off processing for formation of isolation regions in laser diode structures Download PDF

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Publication number
TW201251244A
TW201251244A TW101118371A TW101118371A TW201251244A TW 201251244 A TW201251244 A TW 201251244A TW 101118371 A TW101118371 A TW 101118371A TW 101118371 A TW101118371 A TW 101118371A TW 201251244 A TW201251244 A TW 201251244A
Authority
TW
Taiwan
Prior art keywords
insulating layer
laser diode
patterned
axially extending
waveguide structure
Prior art date
Application number
TW101118371A
Other languages
English (en)
Chinese (zh)
Inventor
Shiwen Liu
Barry J Paddock
Chung-En Zah
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of TW201251244A publication Critical patent/TW201251244A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
TW101118371A 2011-05-27 2012-05-23 Lift-off processing for formation of isolation regions in laser diode structures TW201251244A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161490753P 2011-05-27 2011-05-27

Publications (1)

Publication Number Publication Date
TW201251244A true TW201251244A (en) 2012-12-16

Family

ID=47259756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118371A TW201251244A (en) 2011-05-27 2012-05-23 Lift-off processing for formation of isolation regions in laser diode structures

Country Status (6)

Country Link
US (1) US20140079087A1 (ja)
JP (1) JP2014515563A (ja)
KR (1) KR20140030197A (ja)
CN (1) CN103563098A (ja)
TW (1) TW201251244A (ja)
WO (1) WO2012166424A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3585817B2 (ja) * 2000-09-04 2004-11-04 ユーディナデバイス株式会社 レーザダイオードおよびその製造方法
DE10312214B4 (de) * 2003-03-19 2008-11-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge
KR20040092764A (ko) * 2003-04-29 2004-11-04 삼성전자주식회사 자기정렬을 이용한 반도체 레이저 다이오드 및 그 제조방법
KR100818522B1 (ko) * 2004-08-31 2008-03-31 삼성전기주식회사 레이저 다이오드의 제조방법
US7598104B2 (en) * 2006-11-24 2009-10-06 Agency For Science, Technology And Research Method of forming a metal contact and passivation of a semiconductor feature
US7713769B2 (en) * 2007-12-21 2010-05-11 Tekcore Co., Ltd. Method for fabricating light emitting diode structure having irregular serrations
CN102005517B (zh) * 2009-08-26 2013-09-18 首尔Opto仪器股份有限公司 利用激光剥离技术制造发光二极管的方法和激光剥离装置

Also Published As

Publication number Publication date
WO2012166424A1 (en) 2012-12-06
US20140079087A1 (en) 2014-03-20
JP2014515563A (ja) 2014-06-30
KR20140030197A (ko) 2014-03-11
CN103563098A (zh) 2014-02-05

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