TW201246618A - Led module device, method for manufacturing same, led package used for led module device, and method for manufacturing same - Google Patents

Led module device, method for manufacturing same, led package used for led module device, and method for manufacturing same Download PDF

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Publication number
TW201246618A
TW201246618A TW100137727A TW100137727A TW201246618A TW 201246618 A TW201246618 A TW 201246618A TW 100137727 A TW100137727 A TW 100137727A TW 100137727 A TW100137727 A TW 100137727A TW 201246618 A TW201246618 A TW 201246618A
Authority
TW
Taiwan
Prior art keywords
led
led package
metal foil
metal plate
metal
Prior art date
Application number
TW100137727A
Other languages
Chinese (zh)
Inventor
Masamichi Ishihara
Tsutomu Toyoshima
Yukinobu Sugimura
Kunihiko Nakamura
Shunya Yokozawa
Keishi Matsuura
Original Assignee
Kyushu Inst Technology
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu Inst Technology, Hitachi Chemical Co Ltd filed Critical Kyushu Inst Technology
Publication of TW201246618A publication Critical patent/TW201246618A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09072—Hole or recess under component or special relationship between hole and component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09909—Special local insulating pattern, e.g. as dam around component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10969—Metallic case or integral heatsink of component electrically connected to a pad on PCB
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

This LED module device comprises an LED package, a wiring substrate having an opening for mounting the LED package, and a heat dissipation plate affixed to the LED package back surface. The LED package is assembled on the LED package substrate. The LED package substrate is constituted by attaching, using an adhesive, a laminated film formed from a metal foil with a resin onto a metal plate bent into a prescribed shape so as to have a recess for mounting an LED chip and carrying out silver plating that functions as a reflective material on this metal foil. The LED package is constituted by the LED chip being mounted on the LED package substrate thus constituted, and after the implementation of electrical connection wiring, filling in a transparent resin.

Description

201246618 六、發明說明： 【發明所屬之技術領域】 本發明關於將LED晶片用的LED封裝基板、加工金 屬板而構成之LED封裝及其製造方法、以及使用該led 封裝之LED模組裝置及其製造方法。 【先前技術】 LED (Light Emitting Diode:發光二極體）作爲兼具 有低消費電力、減少二氧化碳、高耐久性之環境以及省能 源之元件而普及。搭載此LED晶片之封裝，係被安裝於 配線基板上，使用於大型顯示器、行動電話或數位攝影機 ' PDA等電子機器之背光、道路照明或一般照明等。LED 本身爲發光元件，放出熱，因此LED封裝基本上包含冷 卻用散熱裝置。 現有之LED模組裝置使用陶瓷基板或矽基板或金屬 基板作爲LED封裝基板》習知使用陶瓷基板或矽基板之 方法，因爲陶瓷或矽之熱傳導較銅等之金屬差、無法有效 散熱，高價位、加工困難等問題存在。 圖22表示習知發光裝置之例之圖（參照專利文獻1 ) 。如圖所示，於不鏽鋼基板2007之表面，介由絕緣膜 2005形成構成引線電極之銅箔圖案2004。於該不鏽鋼基 板2007形成貫穿孔2003，於貫穿孔2003嵌合銅支撐體 2006。於銅支撐體2006前端被形成的凹部4008內，配置 LED晶片2001。將LED晶片2001之各電極予設於基板表 201246618 面之銅箔圖案2004予以導線接合。之後，注入矽樹脂等 透光性樹脂2002使硬化，而形成透鏡。作爲透鏡機能的 矽樹脂，係以覆蓋包含支撐體之突起部及發光元件、甚而 接合電極的導線而設置。 LED晶片電極之導線連接部被實施樹脂密封，但是圖 示之構成，僅於必要之處才能有效注入樹脂，此爲問題點 。樹脂密封用之矽樹脂等透光性樹脂2002爲高價位，因 此要求更進一步限定樹脂注入之構成。 圖23爲專利文獻2之發光裝置之側面斷面圖。基板 3 〇 1 2係使用液晶聚合物等之電氣絕緣性材料，藉由射出成 形形成絕緣性基材。於LED晶片2001之安裝處設置凹部 4008等，而形成3維立體形狀之絕緣性基材。於絕緣性基 材表面形成金屬膜3008後，除去電路部形成用之位置以 外的金屬膜3008。在基板3012之凹部4008安裝LED晶 片2001，藉由導電性接著材將電路部3008與LED晶片 200 1接合。之後，藉由金線3009接合LED晶片2001之 上部電極與電路部3008。之後，於凹部4008內塡充透明 樹脂301 1密封LED晶片2001。最後，於基板301 2之表 面安裝由透明樹脂301 1等構成之擴散板3010，完成LED 照明模組。 如上述說明，將複數個LED晶片2001安裝於凹部 4〇〇8內以立體放配置基板3012，可以容易對應於基板 3 〇 1 2之形狀獲得任意之配光特性之同時，模組之薄型化維 可能。但是，專利文獻2揭示之發光裝置，係以3維形成 -6- 201246618 成爲封裝基座之基板3012之後，形成配線，因此工程複 雜，成本高之問題存在。 圖24表示專利文獻3揭示之LED照明器具，（A ) 爲上面圖，（B)爲部分斷面圖。如圖所示，絕緣金屬基 板具有藉由縮小加工而設置的LED晶片2001設置用之凹 部4008。絕緣金屬基板由金屬基板層4010、絕緣材料層 構成之電氣絕緣層4009、導電性金屬構成之電極圖案 4004、及引線圖案4〇02構成。鄰接之LED晶片2001彼 此係介由電極圖案4004藉由接合導線4003實施電連接。 但是，專利文獻3揭示在一片絕緣金屬基板搭載複數 個LED晶片2001之模組。如圖24 ( A )所示，包含複數 個晶片（此例爲6晶片）而構成1個製品。此時，複數個 晶片之其中1個不良（不亮）時，該製品成爲不良。此情 況下，1個不良晶片連同其他晶片被犧牲。亦即，全部均 點亮始成爲良品。LED晶片2001即使和1C晶片同樣於裸 晶片之檢測判斷爲良品時，組裝工程中確定爲不良之情況 亦存在。不良之救濟時，將個別封裝搭載於照明器具乃簡 單之解決對策，但專利文獻3並無針對切割爲每一 LED 晶片2001之個別封裝，以即將該個別封裝安裝於配線基 板及散熱體有任何揭示。亦即，未針對散熱加以檢討。 專利文獻3係藉由折彎絕緣金屬基板而形成之凹陷底 部來安裝LED晶片200 1，而將接合之連接設於凹陷之中 段（或上段）。因此，金屬基板之底面積僅稍微大於LED 晶片200 1之面積，未活用底面之散熱。另外，使用通常 201246618 之絕緣金屬基板，位於LED晶片200 1之下面的電氣絕緣 層4009通常約80 μιη之厚度，熱傳導性不佳，無法獲得良 好之散熱特性爲其問題。欲提升散熱特性時，可採取薄化 絕緣層5002 (聚醯亞胺層）予以塗佈之方法。 又，爲有效取出光而附加反射材爲不可欠缺者，但專 利文獻3僅揭示於後續實施材料之塗佈或金屬之蒸鍍。使 用透明之絕緣層5002，以底層之金屬面作爲反射面利用時 ，透明絕緣層5002及底層金屬面之光澤處理均導致成本 上升。白色阻劑塗佈將增加追加材料費及塗佈工程費。金 屬膜300 8之蒸鍍爲在低壓（真空）高溫蒸鍍金屬，於對 象物形成金屬披膜，裝置大型化，需要高的裝置，抽真空 亦須時間，作業時間變長，工程費用亦增加。另外，標靶 金屬之成本亦需要。因此，要求無須追加工程，能以低成 本發揮反射性能的反射面之形成。 將個別封裝安裝配線基板，針對藉由絕緣層5 002由 金屬板被絕緣分離的電極端，和配線基板上之配線進行焊 接時，欲防止焊錫引起之電極端與金屬板端之短路時，須 採取焊錫阻劑等之對策，但會增加工程或必要之構件。因 此，要求無須追加工程，能以低成本將個別封裝安裝於配 線基板。 圖25表示專利文獻6揭示之照明器具之斷面圖。如 圖所示金屬核印刷電路基板，係由金屬核5004，於其上介 由絕緣層5002對銅箔實施電路加工而成的印刷電路5005 構成。絕緣層5002係使用聚醚醚酮、聚醚醯亞胺、聚醚 201246618 碾之其中之一構成之約ΙΟΟμηι厚度之耐熱性耐可塑性樹脂 。於金屬核印刷電路基板之凹陷底面載置、固定發光二極 體5003，而將各端子分別連接於印刷電路5005。於金屬 核印刷電路基板之凹部塡充透明丙烯基樹脂5001。如上述 說明，絕緣層5 002係使用耐熱性耐可塑性樹脂，但通常 ，樹脂並不具有散熱特性之優點。因此，要求可達成電氣 絕緣性之同時，可以散熱發光二極體5003產生之熱的熱 傳導性佳的絕緣層5002。 圖26表示專利文獻7揭示之發光裝置之斷面圖。搭 載LED元件6001的Cu基板6006，係以Si02構成之絕緣 層5002作爲接著劑而一體具有薄膜形狀之Cu配線層 6002。Cu配線層60 02之表面被實施Ag鍍敷而具有光反 射性。LED元件600 1係除去元件搭載部之Cu配線層 6002、絕緣層5002之一部分而使Cu基板6006露出。於 該露出之Cu基扳6006之表面被接著固定。LED元件 6001之一對電極，係介由導線6003連接於對應之〇^配 線層6002。透光性樹脂材料之密封樹脂6004被密封於Cu 基板6006之元件搭載部。如此則，於Cu基板6006之露 出表面，藉由接著固定LED元件600 1，可使LED元件 6001產生之熱快速傳導至Cu基板6006，可提升散熱特性 但是，除去Cu配線層6002及絕緣層5002之一部分 而露出Cu基板6006之製程並非容易。習知係介由蝕刻技 術進行該部分之除去，但作爲絕緣層5002使用之Si02難 201246618 以藉由通常之酸或鹼進行蝕刻，需要使用處理上極爲危險 的藥品之氟酸。另外，Cu與氟酸反應而形成CuF2，表面 之Cu箔受損之問題亦存在。因此，要求更簡單之絕緣層 5002之一部分之除去製程。 關於絕緣層5002，取代專利文獻7揭示之Si02，改 用例如聚醯亞胺樹脂層時，於第1階段蝕刻金屬箔設置開 口，以開口之金屬箔爲遮罩而於第2階段蝕刻聚醯亞胺樹 脂層形成開口時，亦需要蝕刻聚醯亞胺樹脂層，需要毒性 之肼，樹脂層爲聚醯亞胺前驅體時，鹼蝕刻之開口工程之 後前驅體之醯亞胺化爲必要，製程複雜。 另外，將樹脂層開口部尺寸和金屬箔開口部尺寸設爲 同一或較小之蝕刻控制乃困難者，於開口部樹脂層端面較 金屬箔端面呈後退之危險性存在，金屬箔端面與金屬板間 之短路引起之信賴性降低問題存在。 〔習知技術文獻〕 〔專利文獻〕 專利文獻1 :特開2002-335019號公報 專利文獻2 :特開平1 1 - 1 6 3 4 1 2號公報 專利文獻3 :特開平1 - 30920 1號公報 專利文獻4 :特開2 0 0 1 - 1 3 1 2 8 4號公報 專利文獻5 :特開2 0 0 6 - 8 8 4 1 0號公報 專利文獻6 :特開平1 1 - 6 8 2 6 9號公報 專利文獻7:特開2006-245032號公報 -10- 201246618 【發明內容】 (發明所欲解決之課題） 本發明係解決該問題’針對在進行金屬板之加工而形 成之LED封裝基板安裝有LED晶片的LED封裝，將其安 裝於配線基板之同時，安裝散熱體而構成LED模組裝置 ，改善該LED模組裝置之散熱特性。 本發明，係使用加工性及熱傳導性良好的金屬板作爲 LED封裝基板，而且使用能確保和安裝於其之LED晶片 之連接配線間之絕緣性的絕緣層，可提升通過該絕緣層之 熱傳導性爲目的。 本發明，係使連接於配線基板的LED封裝之電連接 部，位於較LED封裝更上面，使安裝有LED封裝基板的 散熱體位於下方，藉由分離兩者，而簡單進行LED封裝 基板與配線基板間之電連接之同時，達成散熱與電連接之 個別之成本效益之最佳化，整體而言實現低成本、高效率 之散熱。 (用以解決課題的手段） 本發明之LED封裝及其製造方法，係藉由金屬板之 加工來構成LED晶片用的LED封裝基板。LED封裝基板 具備：LED晶片之安裝用的平板狀底部；及以形成由該底 部端兩側分別站立之壁部的方式被彎曲加工的金屬板。而 且設爲在該金屬板與金屬箔之間挾持由樹脂層及接著材層 構成之2層絕緣層的積層構成。以壁部上端之金屬箔作爲 -11 - 201246618 一對外部連接電極之其中至少一方而構成。於LED封裝 基板之平板狀底部上面，將LED晶片予以安裝之同時， 使該LED晶片之一對電極之其中至少一方連接於平板狀 底部上面之金屬箔，而且將透明樹脂塡充於壁部所挾持之 凹部而構成。 可於金屬板之上，具備作爲反射材機能而被施予金屬 表面處理的金屬箔，而且，作爲外部連接電極而構成之金 屬箔之端部，係較金屬板端被配置於更內側。可以使壁部 上端之金屬箔作爲一對外部連接電極之各個之機能的方式 ，將平板狀底部上面之金屬箔由兩側予以絕緣分離，使 LED晶片之一對電極分別連接於被絕緣分離之金屬箔之各 個。 可於平板狀底部上面，不介由絕緣層，使用導電性晶 粒接合材針對LED晶片進行電氣及機械接合，使用導線 接合將該LED晶片之一對電極之其中一方電極連接於金 屬箔，另一方電極之連接，則使用導電性晶粒接合材針對 金屬板進行連接，使壁部上端側之金屬箔作爲一對連接電 極之其中一方連接電極之機能，而且使用壁部上端側之金 屬板來構成另一方連接電極。 於本發明之LED封裝及其之製造方法，LED封裝基 板，係具備：具有充分面積之平板狀底部，於其上面形成 LED晶片安裝部及LED晶片之一對電極；以形成由該底 部端兩側分別站立之壁部的方式被彎曲加工的金屬板；在 該金屬板之上挾持由樹脂層構成之絕緣層而將金屬箔予以 -12- 201246618 接合的積層構成；構成該絕緣層之樹脂層，係具有5 μηι〜 40 μιη範圍之厚度的聚醯亞胺樹脂。 聚醯亞胺樹脂，係在包含熱可塑性聚醯亞胺的聚醯亞 胺樹脂之中，混合球狀之間隔件粒子或直徑小於該間隔件 粒子的熱傳導性塡料、或該兩者。可將相接於散熱體之 LED封裝之平板狀底部之長邊設爲LED晶片短邊之2倍 〜20倍之長度。 積層體，可以將聚醯亞胺樹脂溶液塗佈於金屬箔或金 屬板，乾燥之後，藉由對金屬板或金屬箔實施熱壓接而形 成。另外，積層體，可於金屬箱或金屬板之上，將可以轉 換爲熱可塑性聚醯亞胺系樹脂的至少一種聚醯亞胺前驅體 樹脂層予以塗佈之後，對該前驅體樹脂層實施熱處理而形 成熱可塑性聚醯亞胺系樹脂層，於該熱可塑性聚醯亞胺系 樹脂層之上，實施金屬板或金屬箔之加熱加壓接合而形成 。另外，積層體，可於金屬箔與金屬板之間，針對挾持熱 可塑性聚醯亞胺系薄膜者實施加熱加壓接合而形成。 本發明之LED模組裝置及其製造方法，係將LED封 裝安裝於配線基板，將一對外部連接電極連接於配線基板 之配線之同時，使LED封裝之平板狀底部背面固定或接 觸散熱體而構成。 【實施方式】201246618 VI. [Technical Field] The present invention relates to an LED package substrate for an LED chip, an LED package formed by processing a metal plate, a method of manufacturing the same, and an LED module device using the same Production method. [Prior Art] LED (Light Emitting Diode) is popular as an element that combines low power consumption, reduced carbon dioxide, high durability, and energy-saving components. The package containing this LED chip is mounted on a wiring board and used for backlighting, road lighting, or general lighting of electronic devices such as large-sized displays, mobile phones, and digital cameras. The LED itself is a light-emitting element that emits heat, so the LED package basically contains a heat sink for cooling. The conventional LED module device uses a ceramic substrate or a tantalum substrate or a metal substrate as an LED package substrate. A method of using a ceramic substrate or a tantalum substrate is conventionally used because the heat conduction of ceramic or tantalum is inferior to that of copper or the like, and heat dissipation is not possible, and the price is high. Problems such as processing difficulties. Fig. 22 is a view showing an example of a conventional light-emitting device (see Patent Document 1). As shown in the figure, a copper foil pattern 2004 constituting a lead electrode is formed on the surface of the stainless steel substrate 2007 via the insulating film 2005. A through hole 2003 is formed in the stainless steel substrate 2007, and the copper support body 2006 is fitted in the through hole 2003. The LED wafer 2001 is disposed in a recess 4008 formed at the front end of the copper support 2006. Each of the electrodes of the LED wafer 2001 is preliminarily bonded to the copper foil pattern 2004 of the surface of the substrate table 201246618. Thereafter, the light-transmitting resin 2002 such as ruthenium resin is injected to be cured to form a lens. The resin which is a lens function is provided by covering a wire including a projection of the support, a light-emitting element, and even a bonding electrode. The wire connecting portion of the LED wafer electrode is resin-sealed, but the configuration is such that the resin can be efficiently injected only where necessary, which is a problem. The light-transmitting resin 2002 such as a resin for resin sealing is at a high price, and therefore it is required to further limit the structure of resin injection. Fig. 23 is a side sectional view showing a light-emitting device of Patent Document 2. The substrate 3 〇 1 2 is formed by forming an insulating substrate by injection molding using an electrically insulating material such as a liquid crystal polymer. A recessed portion 4008 or the like is provided at the mounting portion of the LED wafer 2001 to form a three-dimensional three-dimensional insulating substrate. After the metal film 3008 is formed on the surface of the insulating substrate, the metal film 3008 other than the position for forming the circuit portion is removed. The LED wafer 2001 is mounted on the recess 4008 of the substrate 3012, and the circuit portion 3008 is bonded to the LED wafer 200 1 by a conductive adhesive. Thereafter, the upper electrode of the LED wafer 2001 and the circuit portion 3008 are bonded by a gold wire 3009. Thereafter, the transparent resin 301 1 is filled in the recessed portion 4008 to seal the LED wafer 2001. Finally, a diffusion plate 3010 made of a transparent resin 301 1 or the like is attached to the surface of the substrate 3012 to complete the LED illumination module. As described above, by mounting a plurality of LED chips 2001 in the recesses 4 to 8 to arrange the substrate 3012 in a three-dimensional arrangement, it is possible to easily obtain an arbitrary light distribution characteristic in accordance with the shape of the substrate 3 〇1 2 and to reduce the thickness of the module. Victoria may. However, in the light-emitting device disclosed in Patent Document 2, since the wiring is formed by forming the substrate 3012 of the package base in the three-dimensional form -6-201246618, the wiring is complicated, and the problem is high in cost. Fig. 24 shows an LED lighting fixture disclosed in Patent Document 3, wherein (A) is a top view and (B) is a partial cross-sectional view. As shown in the figure, the insulating metal substrate has a concave portion 4008 for providing the LED wafer 2001 provided by shrinking processing. The insulating metal substrate is composed of a metal substrate layer 4010, an electrically insulating layer 4009 made of an insulating material layer, an electrode pattern 4004 made of a conductive metal, and a lead pattern 4?02. The adjacent LED chips 2001 are electrically connected to each other via the bonding wires 4003 via the electrode patterns 4004. However, Patent Document 3 discloses a module in which a plurality of LED chips 2001 are mounted on one piece of an insulating metal substrate. As shown in Fig. 24 (A), a plurality of wafers (in this example, 6 wafers) are included to constitute one product. At this time, when one of the plurality of wafers is defective (not lit), the product becomes defective. In this case, one bad wafer was sacrificed along with other wafers. That is to say, all of them are turned on and become good products. The LED wafer 2001 is determined to be defective in the assembly process even when the detection of the bare wafer is the same as the 1C wafer. In the case of a defective remedy, it is a simple solution to mount the individual package on the illuminating device. However, Patent Document 3 does not describe any individual package that is diced into each LED chip 2001, so that any individual package is mounted on the wiring substrate and the heat sink. reveal. That is, there is no review of heat dissipation. Patent Document 3 mounts the LED wafer 200 1 by bending the bottom portion formed by bending the insulating metal substrate, and attaching the joint to the middle portion (or upper portion) of the recess. Therefore, the bottom area of the metal substrate is only slightly larger than the area of the LED chip 2001, and the heat dissipation from the bottom surface is not utilized. Further, the insulating metal substrate of the usual 201246618 is used, and the electrical insulating layer 4009 located under the LED wafer 200 1 is usually about 80 μm thick, and the thermal conductivity is not good, and it is a problem that good heat dissipation characteristics cannot be obtained. In order to improve the heat dissipation characteristics, a method of coating the thin insulating layer 5002 (polyimine layer) may be employed. Further, in order to effectively extract light, it is indispensable to add a reflecting material. However, Patent Document 3 only discloses coating of a subsequent material or vapor deposition of a metal. When the transparent insulating layer 5002 is used and the metal surface of the underlayer is used as the reflecting surface, the gloss treatment of the transparent insulating layer 5002 and the underlying metal surface causes an increase in cost. White resist coating will increase additional material costs and coating engineering costs. The vapor deposition of the metal film 300 8 is to deposit a metal at a low pressure (vacuum) high temperature, to form a metal film on the object, and to increase the size of the device, requiring a high device, taking time for vacuuming, increasing working time, and increasing engineering costs. . In addition, the cost of the target metal is also required. Therefore, it is required to form a reflecting surface which exhibits reflection performance at a low cost without additional work. When the electrode terminal to be insulated and separated by the insulating layer 5 002 and the wiring on the wiring board are soldered to the individual package, the electrode terminal and the metal plate end are prevented from being short-circuited by the solder. Take countermeasures such as solder resists, but increase the number of works or necessary components. Therefore, it is required to mount individual packages on the wiring board at low cost without additional engineering. Fig. 25 is a sectional view showing a lighting fixture disclosed in Patent Document 6. The metal core printed circuit board as shown in the figure is composed of a metal core 5004 on which a printed circuit 5005 is formed by performing an electrical circuit on the copper foil via the insulating layer 5002. The insulating layer 5002 is a heat-resistant plastic resin having a thickness of about ΙΟΟμηι, which is composed of one of polyetheretherketone, polyetherimine, and polyether 201246618. The light-emitting diode 5003 is placed and fixed on the recessed bottom surface of the metal core printed circuit board, and each terminal is connected to the printed circuit 5005. The transparent acryl-based resin 5001 is filled in the concave portion of the metal core printed circuit board. As described above, the heat insulating plastic resin is used for the insulating layer 5 002, but generally, the resin does not have the advantage of heat dissipation characteristics. Therefore, it is required to provide the insulating layer 5002 which is excellent in thermal conductivity of heat generated by the light-emitting diode 5003 while achieving electrical insulation. Fig. 26 is a sectional view showing a light-emitting device disclosed in Patent Document 7. The Cu substrate 6006 on which the LED element 6001 is mounted is a Cu wiring layer 6002 having a thin film shape integrally formed of an insulating layer 5002 made of SiO 2 as an adhesive. The surface of the Cu wiring layer 60 02 is subjected to Ag plating to have light reflectivity. The LED element 600 1 removes one of the Cu wiring layer 6002 of the element mounting portion and the insulating layer 5002 to expose the Cu substrate 6006. The surface of the exposed Cu-based plate 6006 is then fixed. One of the pair of electrodes of the LED element 6001 is connected to the corresponding wiring layer 6002 via a wire 6003. The sealing resin 6004 of the translucent resin material is sealed to the component mounting portion of the Cu substrate 6006. In this way, on the exposed surface of the Cu substrate 6006, the heat generated by the LED element 6001 can be quickly conducted to the Cu substrate 6006 by fixing the LED element 6001, and the heat dissipation characteristics can be improved. However, the Cu wiring layer 6002 and the insulating layer 5002 are removed. The process of exposing the Cu substrate 6006 in part is not easy. Conventionally, this portion is removed by etching technique, but the SiO 2 used as the insulating layer 5002 is difficult to be etched by a usual acid or alkali, and it is necessary to use a hydrofluoric acid which is a highly dangerous drug. Further, Cu reacts with hydrofluoric acid to form CuF2, and the problem of damage to the surface of the Cu foil also exists. Therefore, a simpler removal process for a portion of the insulating layer 5002 is required. In the insulating layer 5002, in place of the SiO 2 disclosed in Patent Document 7, when a polyimide layer is used, for example, an opening is formed in the first step of etching the metal foil, and the metal foil in the opening is used as a mask to etch the polyimide in the second stage. When the imide resin layer forms an opening, it is also necessary to etch the polyimide resin layer, which requires toxicity. When the resin layer is a polyimide precursor, it is necessary to imidize the precursor after the opening process of the alkali etching. The process is complicated. In addition, it is difficult to control the size of the opening of the resin layer and the size of the opening of the metal foil to be the same or smaller, and the end face of the resin layer is more likely to retreat from the end face of the metal foil, and the end face of the metal foil and the metal plate are present. The problem of reduced reliability caused by short circuits between them exists. [Patent Document] [Patent Document] Patent Document 1: JP-A-2002-335019 Patent Document 2: JP-A No. 1 1 - 1 6 3 4 1 2 Patent Document 3: JP-A No. 1 - 30920 No. 1 Patent Document 4: JP-A-20001 - 1 3 1 2 8 No. 4 Patent Document 5: JP-A-2000-A-8-101 Patent Document 6: JP-A-1 1 - 6 8 2 6 SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The present invention solves the problem of an LED package substrate formed for processing a metal plate. An LED package in which an LED chip is mounted is mounted on a wiring board, and a heat sink is mounted to constitute an LED module device, thereby improving heat dissipation characteristics of the LED module device. According to the present invention, a metal plate having excellent workability and thermal conductivity is used as the LED package substrate, and an insulating layer capable of ensuring insulation between the connection wiring of the LED chip mounted thereon can be used to improve thermal conductivity through the insulating layer. for purpose. According to the present invention, the electrical connection portion of the LED package connected to the wiring substrate is located above the LED package, and the heat sink body on which the LED package substrate is mounted is positioned below, and the LED package substrate and wiring are simply separated by separating the two. At the same time as the electrical connection between the substrates, the individual cost-effectiveness of the heat dissipation and the electrical connection is achieved, and overall, low-cost, high-efficiency heat dissipation is achieved. (Means for Solving the Problem) The LED package and the method of manufacturing the same according to the present invention constitute an LED package substrate for an LED chip by processing a metal plate. The LED package substrate includes a flat bottom portion for mounting an LED chip, and a metal plate bent to form a wall portion standing on both sides of the bottom end. Further, a laminated structure in which two insulating layers composed of a resin layer and a secondary material layer are sandwiched between the metal plate and the metal foil is used. The metal foil at the upper end of the wall portion is formed as at least one of a pair of external connection electrodes of -11 - 201246618. The LED chip is mounted on the flat bottom of the LED package substrate, and at least one of the pair of electrodes of the LED chip is connected to the metal foil on the top of the flat bottom, and the transparent resin is filled on the wall. It consists of a concave part. On the metal plate, a metal foil which is subjected to metal surface treatment as a function of the reflective material can be provided, and the end portion of the metal foil which is an external connection electrode is disposed on the inner side of the metal plate end. The metal foil on the upper end of the flat plate may be insulated and separated from the two sides by a metal foil at the upper end of the wall as a function of a pair of external connection electrodes, so that one of the pair of electrodes of the LED chip is respectively connected to the insulated and separated. Each of the metal foils. The LED wafer can be electrically and mechanically bonded to the upper surface of the flat plate without using an insulating layer, and one of the electrodes of one of the LED chips can be connected to the metal foil by wire bonding. In the connection of one electrode, the metal plate is connected by a conductive die bonding material, and the metal foil on the upper end side of the wall is used as one of the pair of connection electrodes to connect the electrodes, and the metal plate on the upper end side of the wall is used. The other side is connected to the electrode. In the LED package of the present invention and the method of manufacturing the same, the LED package substrate has a flat bottom having a sufficient area, and an LED chip mounting portion and a pair of electrodes of the LED chip are formed thereon to form two bottom electrodes a metal plate which is bent in a manner of standing on the side of the wall; a laminate formed of a resin layer on the metal plate and a metal foil bonded to -12-201246618; and a resin layer constituting the insulating layer A polyimine resin having a thickness in the range of 5 μηι to 40 μηη. The polyimine resin is a mixture of spherical spacer particles or a thermally conductive material having a diameter smaller than the spacer particles, or both, in a polyimide resin containing a thermoplastic polyimide. The long side of the flat bottom of the LED package that is connected to the heat sink can be set to be twice to 20 times longer than the short side of the LED chip. In the laminate, the polyimide resin solution may be applied to a metal foil or a metal plate, and after drying, it may be formed by thermocompression bonding a metal plate or a metal foil. Further, the laminated body may be coated on the metal case or the metal plate with at least one polyimine precursor resin layer which can be converted into a thermoplastic polyimine-based resin, and then applied to the precursor resin layer. The thermoplastic polyimine-based resin layer is formed by heat treatment, and is formed by heating and press-bonding a metal plate or a metal foil on the thermoplastic polyimide-based resin layer. Further, the laminated body can be formed by applying heat and pressure bonding between the metal foil and the metal plate to the thermoplastic polyimide film. In the LED module device and the method of manufacturing the same according to the present invention, the LED package is mounted on the wiring substrate, and the pair of external connection electrodes are connected to the wiring of the wiring substrate, and the flat bottom surface of the LED package is fixed or contacted with the heat sink. Composition. [Embodiment]

以下說明例示之本發明。圖1表示本發明具體化之 LED模組裝置1 〇〇〇之第1例之側面斷面圖。例示之[ED -13- 201246618 模組裝置1 000係由以下構成：LED封裝1 ;安裝LED封 裝1之具有開口的配線基板8:固定於LED封裝1之背面 的散熱板1〇。LED封裝1對配線基板8之開口部28之安 裝，係將接著材7(耐熱性接著材7)塡埋於LED封裝1 側面與配線基板8之間的間隙，於接著材7之上，藉由焊 接等將LED封裝1之一對連接電極6(配線基板8之連接 用的外部連接電極6)，連接於配線基板8上面的配線5 。LED晶片2發光面係朝向圖中之上面側，不被配線基板 8遮斷而可以朝上面發光。安裝有配線基板8的LED封裝 1之背面，係藉由焊接被固定於散熱板10上。或者，取代 該焊接，而使用高熱傳導性之接著材7進行接著亦可。 LED封裝1被組裝於LED封裝基板9之上。使用於 LED模組裝置1 000之第1例的LED封裝基板9，例如參 照圖2之如後述說明，係在以具有LED晶片2安裝用之 凹部17的方式被彎曲加工成爲特定形狀的金屬板12之上 ，使用接著材7將附加有樹脂的金屬箔構成之積層膜貼合 之同時，於該金屬箔上實施鍍敷而形成具有反射材機能的 銀鍍敷層26而構成。於作爲連接配線5機能的金屬箔（ 及銀鍍敷層26)，係開口設有縫隙14用於實施一對連接 電極6 (金屬箔之兩端側）之絕緣分離。於上述構成之 LED封裝基板9上，被安裝有LED晶片2，實施和配線5 之電連接後，塡充透明樹脂3，構成LED封裝1。 如上述說明，LED封裝基板9 (參照圖2 )，係使金 屬板12與金屬箔所挾持絕緣層，藉由樹脂層（聚醯亞胺 -14- 201246618 膜）與接著材層之2層構成’聚醯亞胺膜承受電絕緣’接 著材7承受接著力，可以分別最佳化’結果可以改善熱傳 導性。或者，如圖5之後述說明’ LED封裝基板9 ’係藉 由聚醯亞胺樹脂形成絕緣層’挾持該聚醯亞胺樹脂構成之 絕緣層，而於金屬板12上接合金屬箔（例如銅箔23)成 爲積層體，將該積層體彎曲加工成爲特定形狀’而於平板 狀底面上形成將LED晶片2安裝部及其之一對電極予以 連接的連接部201。 如上述說明，LED封裝基板9具備充分面積之平板狀 底部22，於此可以安裝LED晶片2，可形成用於連接其 之一對電極的連接部201，於具有該大面積之平板狀底部 22之下面安裝散熱體，因此可以有效使來自LED晶片2 之熱傳導至散熱體。另外，個片化後之剛性可藉由較金屬 箔厚的金屬板12予以保持，更進一步能提升信賴性。無 須藉由透明樹脂3確保剛性，樹脂材料之選擇變爲豐富， 結果有助於成本降低。以下更詳述其製造方法。 圖2表示第1LED封裝基板9之彎曲加工說明圖。圖 2 ( a )表示待加工之金屬板1 2 (銅或鋁等高熱傳導性之板 狀金屬構件）之側面圖。如（b )所示，於該板狀構件之 上，使用接著材7，將附加有樹脂的金屬箔構成之積層膜 (例如貼合著聚醯亞胺膜的銅箔23 :例如日立化成工業之 MCF-5000IR ’該材料之聚醯亞胺之厚度僅5μπι，就熱阻 抗而言乃極爲有利之材料）的聚醯亞胺膜側進行貼合。藉 由樹脂層厚度設爲較該接著材層薄，可以兼顧成本及散熱 -15- 201246618 特性。該接著材7較好是塡充熱傳導性塡料。如此則，樹 脂層（聚醯亞胺膜）與接著材層構成之2層絕緣層，係成 爲被金屬板12與金屬箔挾持之積層構成。藉由聚醯亞胺 膜及接著材層，不僅可以進行LED晶片2之一對連接電 極6間之絕緣，亦可將銅箔23利用作爲LED晶片2之連 接配線5。另外，不限定於銅箔23，亦可使用鋁等高熱傳 導性之金屬箔（金屬層）。 如上述說明，藉由絕緣層構成爲樹脂層與接著材層之 2層，可以大幅提升絕緣層之散熱特性。例如作爲1 8 μ之 銅箔23及125μηι左右之銅板（金屬板12)之間之絕緣層 ，僅使用聚醯亞胺膜之1層時，加上兩方之公差，亦兼顧 其間之接著力，聚醯亞胺膜之厚度需要例如20〜30μιη左 右。相對於此，絕緣層區分爲聚醯亞胺膜與接著材層時， 聚醯亞胺膜厚可以盡力薄化。此可於銅箔23之上塗佈極 薄之聚醯亞胺16而實現。結果，可實現聚醯亞胺膜之厚 度5μηι。欲將該銅箔23貼合於薄的聚醯亞胺膜之積層需 要使用接著材7。想定爲在約125μιη之較厚板材（金屬板 12)進行塗佈，因此，和上述理由同樣將接著材層之厚度 設爲約25 μιη。單純就厚度比而言，絕緣層1層時爲25 μιη ’聚醯亞胺膜與接著材層之2層時爲25μιη + 5μιη，絕緣層 2層爲不利。但是’絕緣層2層時，5μπι之聚醯亞胺膜承 受耐絕緣性，因此接著材層可以簡單提升熱傳導性。例如 可以藉由提升熱傳導性塡料（氮化鋁等陶瓷或金屬）之塡 充率而簡單實現。通常，塡充熱傳導性塡料時，耐電氣絕 -16- 201246618 緣性會下降，但藉由和聚醯亞胺膜之積層可以忽視耐電氣 絕緣性。結果，絕緣層2層時，例如整體之熱傳導率和大 略同一厚度之1層接著材7比較可提升約3倍。 另外，聚由樹脂層，上面之銅箔23之蝕刻加工變爲 容易。蝕刻時無須擔心接著材層被蝕刻液侵蝕。但是，僅 藉由接著材層提升熱傳導性時容易犧牲耐絕緣性，難以藉 由接著材層單層兼顧熱傳導性及耐絕緣性。 如圖2 ( c )所示，進行貼合金屬箔之加工，形成縫隙 14之開口及銅箔除去部25。該加工係使用例如微影成像 技術。於金屬層（銅箔23)上塗佈阻劑，進行圖案之曝光 、顯像，再進行蝕刻，除去阻劑，完成縫隙14之開口及 銅箔除去部25。於此說明將積層膜貼合於金屬板12之狀 態下，於積層膜之金屬箔形成縫隙1 4之開口之例，但亦 可於積層膜單獨之狀態下藉由蝕刻加工，於金屬箔形成縫 隙14之開口，使用接著材7將設有縫隙14之積層膜貼合 於金屬板12上。或者，於積層膜單獨之狀態下藉由衝孔 加工，形成縫隙14之開口亦可。但是，此情況下，縫隙 1 4，不僅對金屬箔，亦對聚醯亞胺層進行開口。 如（d )所示，針對已貼合著附加有樹脂之金屬箔的 金屬板1 2進行彎曲加工。該彎曲加工，係使搭載LED晶 片2之凹部17及上部朝外方向折彎而形成連接電極6的 方式，藉由使用模具之衝孔加工進行。如後述說明，將連 接電極6焊接於配線基板8時，爲防止焊錫4引起之連接 電極6與金屬板12之電氣短路，而設置除去連接電極6 -17- 201246618 前端側之一部分的銅箔除去部25。亦即，連接電極6之端 部，相較於金屬板12之端被配置於更內側。爲防止電極 端與金屬板12端之焊接短路，可於無追加工程之情況下 ，藉由如圖2(c)所示縫隙14之開口工程來設置銅箔除 去部25。 之後，如（e )所示，針對作爲LED晶片2之發光之 反射材機能的金屬（例如銀）鍍敷（金屬表面處理），於 金屬箔上面全部實施。藉由使用金屬箔作爲鍍敷處理之鍍 敷電極，則除了縫隙1 4及銅箔除去部2 5以外，可以僅於 金屬箔上面被實施鍍敷。使用銀於金屬表面處理必要之處 進行油墨塗佈，藉由燒結形成光澤面（反射材）。 圖3表示完成之第1LED封裝基板9之圖，（A)表 示將複數個LED封裝基板9連結之狀態圖，（B )表示僅 取出其之1個LED封裝基板9之圖，（C)表示沿（B) 之A-A’線切斷之斷面圖，（D )表示沿（B )之B-B’線切 斷之斷面圖》於圖示之例，說明將5x14個LED封裝基板 9同時作成於1片金屬板12上之例。於後續工程，係於 LED封裝基板9上安裝LED晶片2實施樹脂密封之後， 切片成爲各個封裝或任意複數個連結之封裝而予以個片化 。個片化，係沿如圖3 ( A )所示分割線1 3進行。但亦可 藉由作成將複數個LED封裝1連結的連結部32，而進行 電氣之串聯連接之同時，對連結構成之LED封裝1賦予 柔軟性，而可以安裝於具有凸面形狀或凹面形狀之任意外 表面形狀的散熱構件或框體上（參照如後述說明之圖1 9 ) •18- 201246618The invention exemplified is described below. Fig. 1 is a side cross-sectional view showing a first example of an LED module device 1 according to the present invention. The ED-13-201246618 module device 1 000 is composed of the LED package 1 and the wiring board 8 having the opening of the LED package 1 : a heat dissipation plate 1 fixed to the back surface of the LED package 1 . The mounting of the LED package 1 on the opening 28 of the wiring board 8 is performed by burying the adhesive material 7 (heat-resistant adhesive material 7) in the gap between the side surface of the LED package 1 and the wiring board 8, and borrowing on the adhesive material 7 One of the LED packages 1 is connected to the connection electrode 6 (the external connection electrode 6 for connection of the wiring substrate 8) by soldering or the like, and is connected to the wiring 5 on the upper surface of the wiring substrate 8. The light-emitting surface of the LED chip 2 faces the upper side in the drawing, and can be emitted upward without being blocked by the wiring substrate 8. The back surface of the LED package 1 on which the wiring substrate 8 is mounted is fixed to the heat dissipation plate 10 by soldering. Alternatively, instead of the welding, the use of the high thermal conductivity of the binder 7 may be followed. The LED package 1 is assembled on the LED package substrate 9. The LED package substrate 9 of the first example of the LED module device 1 000 is bent into a metal plate having a specific shape so as to have a recess 17 for mounting the LED chip 2, as will be described later with reference to FIG. On the other hand, a laminated film made of a metal foil to which a resin is attached is bonded to the upper surface of the material, and the metal foil is plated to form a silver plating layer 26 having a function of a reflective material. In the metal foil (and the silver plating layer 26) functioning as the connection wiring 5, a slit 14 is provided in the opening for insulating separation of the pair of connection electrodes 6 (the both end sides of the metal foil). The LED chip 2 is mounted on the LED package substrate 9 having the above configuration, and after being electrically connected to the wiring 5, the transparent resin 3 is filled to constitute the LED package 1. As described above, the LED package substrate 9 (see FIG. 2) is an insulating layer sandwiched between the metal plate 12 and the metal foil, and is composed of a resin layer (polyimide-14-201246618 film) and a second layer of the adhesive layer. The 'polyimine film is subjected to electrical insulation' and the material 7 is subjected to an adhesion force, which can be optimized separately to improve the thermal conductivity. Alternatively, as will be described later in FIG. 5, the 'LED package substrate 9' is formed by laminating an insulating layer of a polyimide film to form an insulating layer composed of the polyimide film, and bonding a metal foil (for example, copper) to the metal plate 12. The foil 23) is a laminated body, and the laminated body is bent into a specific shape ′, and a connecting portion 201 that connects the LED chip 2 mounting portion and one of the counter electrodes is formed on the flat bottom surface. As described above, the LED package substrate 9 has a flat bottom portion 22 having a sufficient area, and the LED wafer 2 can be mounted thereon, and the connection portion 201 for connecting one of the pair of electrodes can be formed, and the flat bottom portion 22 having the large area can be formed. The heat sink is mounted underneath, so that heat from the LED chip 2 can be efficiently conducted to the heat sink. In addition, the rigidity after singulation can be maintained by the metal plate 12 thicker than the metal foil, and the reliability can be further improved. It is not necessary to ensure rigidity by the transparent resin 3, and the selection of the resin material becomes rich, and as a result, the cost is lowered. The manufacturing method thereof will be described in more detail below. FIG. 2 is a view showing a bending process of the first LED package substrate 9. Fig. 2 (a) shows a side view of a metal plate 1 2 (a plate-like metal member having high thermal conductivity such as copper or aluminum) to be processed. As shown in (b), a laminate film made of a metal foil to which a resin is added is used on the plate member (for example, a copper foil 23 to which a polyimide film is bonded: for example, Hitachi Chemical Co., Ltd.) The MCF-5000IR 'polyimine of this material has a thickness of only 5 μm, which is a material which is extremely advantageous in terms of thermal resistance, and is bonded to the polyimide film side. By setting the thickness of the resin layer to be thinner than the thickness of the adhesive layer, it is possible to achieve both cost and heat dissipation -15-201246618. The backing material 7 is preferably a heat-conductive conductive material. In this case, the two insulating layers composed of the resin layer (polyimine film) and the adhesive layer are formed by lamination of the metal plate 12 and the metal foil. By the polyimide film and the adhesive layer, not only the insulation between one of the LED chips 2 but also the connection electrode 6 can be used, and the copper foil 23 can be used as the connection wiring 5 of the LED chip 2. Further, it is not limited to the copper foil 23, and a metal foil (metal layer) having high heat conductivity such as aluminum may be used. As described above, by forming the insulating layer as two layers of the resin layer and the adhesive layer, the heat dissipation characteristics of the insulating layer can be greatly improved. For example, as the insulating layer between the copper foil 23 of 18 μm and the copper plate (metal plate 12) of about 125 μm, when only one layer of the polyimide film is used, the tolerance of both sides is added, and the adhesion between them is also taken into consideration. The thickness of the polyimide film needs to be, for example, about 20 to 30 μm. On the other hand, when the insulating layer is divided into a polyimide film and a backing layer, the film thickness of the polyimide film can be reduced as much as possible. This can be achieved by coating a very thin polyimide 14 on the copper foil 23. As a result, the thickness of the polyimide film can be 5 μηι. It is necessary to use the bonding material 7 in order to laminate the copper foil 23 to the laminate of the thin polyimide film. It is intended to be applied to a thick plate (metal plate 12) of about 125 μm, and therefore, the thickness of the backing layer is set to about 25 μm in the same manner as described above. In terms of the thickness ratio, when the insulating layer is one layer, it is 25 μm η polyimide layer and the second layer of the second layer is 25 μm η + 5 μm, and the insulating layer 2 layer is disadvantageous. However, when the insulating layer is two layers, the 5 μm polyimine film is resistant to insulation, so that the subsequent layer can easily improve the thermal conductivity. For example, it can be easily realized by increasing the charge ratio of the thermally conductive material (ceramic or metal such as aluminum nitride). In general, when the heat conductive conductive material is filled, the edge resistance of the electrical insulation is lowered, but the electrical insulation resistance can be neglected by the laminate with the polyimide film. As a result, when the insulating layer is two layers, for example, the overall thermal conductivity and the one-layered material 7 of substantially the same thickness can be increased by about three times. Further, it is easy to etch the resin layer and the copper foil 23 on the upper side. There is no need to worry about the erosion of the adhesive layer by the etching solution during etching. However, it is easy to sacrifice the insulation resistance only when the thermal conductivity is improved by the adhesive layer, and it is difficult to achieve both thermal conductivity and insulation resistance by the single layer of the adhesive layer. As shown in Fig. 2 (c), the metal foil is bonded to form an opening of the slit 14 and a copper foil removing portion 25. This processing system uses, for example, lithography imaging techniques. A resist is applied onto the metal layer (copper foil 23), and exposure and development of the pattern are performed, and etching is further performed to remove the resist, thereby completing the opening of the slit 14 and the copper foil removing portion 25. Here, an example in which the laminated film is bonded to the metal plate 12 and the opening of the slit 14 is formed in the metal foil of the laminated film may be formed in the metal foil by etching in a state in which the laminated film is separately formed. The opening of the slit 14 is bonded to the metal plate 12 by using the adhesive material 7 to laminate the laminated film provided with the slit 14. Alternatively, the opening of the slit 14 may be formed by punching in a state in which the laminated film is alone. However, in this case, the slit 14 not only opens to the metal foil but also the polyimide layer. As shown in (d), the metal plate 12 to which the metal foil to which the resin is attached is bonded is subjected to bending. This bending process is performed by punching a mold using a mold in which the concave portion 17 on which the LED wafer 2 is mounted and the upper portion are bent outward to form the connection electrode 6. As will be described later, when the connection electrode 6 is soldered to the wiring board 8, in order to prevent the connection between the connection electrode 6 and the metal plate 12 caused by the solder 4, a copper foil which is removed from the front end side of the connection electrode 6-17-201246618 is removed. Part 25. That is, the end portion of the connection electrode 6 is disposed on the inner side of the end of the metal plate 12. In order to prevent short-circuiting between the electrode end and the metal plate 12 end, the copper foil removing portion 25 can be provided by the opening process of the slit 14 as shown in Fig. 2(c) without additional work. Thereafter, as shown in (e), metal (for example, silver) plating (metal surface treatment) which is a function of the light-emitting reflective material of the LED wafer 2 is carried out on the metal foil. By using a metal foil as the plating electrode for the plating treatment, plating may be performed only on the surface of the metal foil except for the slit 14 and the copper foil removing portion 25. The silver is applied to the surface of the metal, and the ink is applied to form a glossy surface (reflective material) by sintering. 3 is a view showing the completed first LED package substrate 9, (A) showing a state in which a plurality of LED package substrates 9 are connected, and (B) showing only one LED package substrate 9 taken out, and (C) showing A section cut along the line A-A' of (B), and (D) shows a section cut along the line B-B' of (B). In the example shown in the figure, the package is 5x14 LEDs. The substrate 9 is simultaneously formed on one metal plate 12. In the subsequent process, the LED chip 2 is mounted on the LED package substrate 9 to perform resin sealing, and then the chips are packaged into individual packages or any number of connected packages. The singulation is performed along the dividing line 13 as shown in Fig. 3 (A). However, the connection portion 32 that connects the plurality of LED packages 1 can be electrically connected in series, and the LED package 1 having the connection structure can be provided with flexibility, and can be attached to any of the convex shape or the concave shape. Heat-dissipating member or frame on the outer surface shape (refer to Figure 19 described later) • 18- 201246618

圖示之第1 LED封裝基板9係形成搭載LED晶片2的 凹部17。於該凹部17兩側設置左右壁部18、19，設置和 該左右壁部18、19連結、而且正交的前後壁部20、21， 達成左右前後實施樹脂密封之機能。左右壁部18、19上 面之金屬箔（及其上之銀鍍敷層26)係作爲一對連接電極 6之機能。用於電氣分離一對連接電極6的縫隙14被形成 於金屬箔（及其上之銀鍍敷層26)。如後述說明，LED 晶片2被安裝於藉由縫隙14分割之其中一方金屬箔之上 〇 圖示之第1LED封裝基板9係具備：搭載LED晶片2 的平板狀底部，及位於該底部之左右前後，朝由底部端折 彎向上之方向，朝和LED晶片2之發光方向同一側延伸 之左右及前後壁部。該一對左右壁部前端面之金屬箔，係 作爲連接電極6之機能。左右前後之壁部由底部端上升之 方向，係未必需要正交，以使連接電極6較平板狀底部位 於更上方的方式，例如於斜向上方以直線方式或彎曲向上 亦可。圖示之例，係藉由縫隙14將平板狀底部及前後壁 部之金屬箔實施2分割，使一對連接電極6互相分離。如 後述說明（參照圖9)，於2分割之底部金屬箔之一方之 上安裝有LED晶片2，實施一方之導線接合，於2分割之 底部金屬箔之另一方實施另一方之導線接合。 圖4表示和第1 LED封裝基板9之圖3不同的另一例 之圖，（A)表示將複數個LED封裝基板9連結之狀態圖 -19- 201246618 ，（B)表示僅取出其之1個LED封裝基板9之圖，（C )表示沿（B )之A-A’線切斷之斷面圖，（D)表示沿（B )之B - B ’線切斷之斷面圖。於圖示例，和圖3同樣，說明 將5x14個LED封裝基板9同時作成於1片金屬板12上 之例。於圖4之第1LED封裝基板9僅於凹部17之左右 側設置壁部，此點和不僅於左右，亦於前後設置壁部的圖 3不同。於後續工程，係於LED封裝基板9上安裝LED 晶片2之後，於模具內實施樹脂密封時，藉由左右壁部18 、1 9限制流向圖中左右方向之樹脂，流向前後方向之樹脂 ，則藉由封裝基板之邊緣部處理，例如僅於邊緣部設置壁 部予以限制。他構成之說明則和圖3同一。 以下參照圖5-圖6說明第2LED封裝基板9之製造。 第2LED封裝基板9使用之絕緣層係由聚醯亞胺樹脂形成 ，此點和參照圖2-圖4說明之第1LED封裝基板9之樹脂 層（聚醯亞胺膜）與接著材層之2層構成之絕緣層不同。 圖5表示第2LED封裝基板9之彎曲加工說明圖。圖5(a )表示待加工之金屬板1 2之側面圖。如圖（b )所示，於 金屬板12之上，挾持聚醯亞胺樹脂構成之絕緣層而將金 屬箔（例如銅箔23)予以接合構成積層體。因此，首先， 在金屬箔（或金屬板12)將包含熱可塑性聚醯亞胺的聚醯 亞胺樹脂溶解於溶媒而成的溶液予以塗佈，乾燥後實施金 屬箔（或金屬板I2)之熱壓接。通常，考慮金屬板12與 金屬箔之平坦性，欲確保一定之絕緣耐壓時，須塗佈最低 5μηι膜厚之聚醯亞胺樹脂。就散熱特性觀點而言，聚醯亞 -20- 201246618 胺樹脂之厚度越薄越好，但就絕緣耐壓及破裂強度觀點而 言則要求某種程度厚度。以聚醯亞胺樹脂層作爲絕緣層使 用時，LED搭載要求之絕緣膜之絕緣耐壓通常爲2.5〜5 kV ’聚醯亞胺樹脂之絕緣耐壓會依據構造而不同，但爲數百 〜5 0〇ν/μιη ’因此最低5μιη之厚度爲必要。另外，欲提升 散熱效果時，不能增厚聚醯亞胺樹脂層，其厚度爲40 μιη 以下，較好是20μιη以下（參照圖20說明之後述實施例1 )° 作爲構成積層體之另一方法，係於金屬板12之上， 首先塗佈可轉換爲熱可塑性聚醯亞胺系樹脂的至少一種聚 醯亞胺前驅體樹脂層（參照實施例2)。之後，進行該前 驅體樹脂層之熱處理而形成熱可塑性聚醯亞胺系樹脂層。 於該熱可塑性聚醯亞胺系樹脂層上實施銅箔2 3之加熱加 壓予以接合而構成積層體。 或者，欲構成積層體時，首先，非於金屬板12，而於 銅箔23之上，塗佈可轉換爲熱可塑性聚醯亞胺的聚醯亞 胺前驅體樹脂層。進行該前驅體樹脂層之熱處理而形成熱 可塑性聚醯亞胺系樹脂層之後，實施加熱加壓而積層爲金 屬板1 2。 如上述說明，欲提升散熱特性時儘可能薄化絕緣層， 而欲確保破壞耐壓則需要特定膜厚，另外需要平坦性之變 動膜厚，需要塗佈絕緣耐壓以上之必要之膜厚。因此，欲 減低變動確保一定膜厚，可於聚醯亞胺樹脂混合球狀之間 隔件粒子（例如積水化學工業之製品：micro pearl SI球 -21 - 201246618 狀之塑膠微粒子（3〜500μπι’具有高的壓縮性）。另外， 除該間隔件粒子以外’或者混合兩方，藉由使較間隔件粒 子直徑小的熱傳導性良好的塡料混合於聚醯亞胺樹脂，能 更進一步改善散熱特性。熱傳導性良好的塡料可使用氮化 鋁、塗佈氧化鋁的金屬微粒子（例如銅），或者塗佈氧化 鋁的碳粒子或纖維。通常，塡充熱傳導性塡料會降低耐電 氣絕緣性，但可以增厚絕緣層之塗佈，膜厚之控制變爲容 易。 如上述說明’使包含熱可塑性聚醯亞胺的聚醯亞胺樹 脂構成之絕緣層，由金屬板12與金屬箔予以挾持而成爲 積層構成，可將該絕緣層之膜厚控制成爲特定値（5μιη〜 40μηι)。藉由該絕緣層，不僅可進行LED晶片2之一對 連接電極6間之絕緣，亦可以銅箔23利用作爲LED晶片 2之連接配線5。另外，不限定於銅箔23，可使用鋁等高 熱傳導性之金屬箔（金屬層）。 之後，如圖5 ( c )所示，進行接合之金屬箔之加工， 形成縫隙14之開口及銅箔除去部25 (參照圖2(c)之詳細 說明）。存在聚醯亞胺樹脂層之故，上面之銅箔23之蝕 刻加工變爲容易。縫隙14部，因爲不作爲LED晶片2之 發光之反射材之機能’因此較窄較好，欲將縫隙1 4兩側 之金屬箔予以絕緣分離’較好是約20Mm〜100Mm。 如5 ( d )所示，進行銅箔23、聚醯亞胺樹脂層及金 屬板12構成之積層體之彎曲加工（參照圖2(d)之詳細說 明）。 -22- 201246618 如5(e)所示，於金屬箔上面全面，實施作爲LED 晶片2之發光之反射材之機能的金屬（例如銀）鍍敷層（ 金屬表面處理）之鎪敷（參照圖2(e)之詳細說明）》如此 則’金屬板12上之全面被施予金屬反射處理。 雖說明積層體之彎曲加工後進行金屬反射處理，但亦 可於彎曲加工前進行金屬反射處理。此情況下，積層體之 衝孔加工以保護帶覆蓋至少金屬反射處理面之上的狀態下 進行，之後，玻璃保護帶。 圖6表示完成之第2LED封裝基板9之圖，（A)表 示將複數個LED封裝基板9連結之狀態圖，（B)表示僅 取出其之1個LED封裝基板9之圖。於圖示之例，說明 將5x14個LED封裝基板9同時作成於1片金屬板12上 之例。於後續工程，係於LED封裝基板9上安裝LED晶 片2實施樹脂密封之後，切片成爲各個封裝或任意複數個 連結之封裝而予以個片化。 如圖6(B)所示，爲使積層體之彎曲加工時之縮小 變形不及於周邊部，於封裝基板區域101周邊形成空隙部 103。介由設於封裝基板區域101周圍之結合部102連結 於其周圍之金屬板12。於後續工程之個片化時於該結合部 102予以切斷。封裝基板區域101之內部詳細參照圖7如 後述說明。 圖7表示第2LED封裝基板9之詳細圖，（A)表示 表示僅取出1個LED封裝基板9之圖，（B )表示沿（A )之A-A’線切斷之斷面圖，（C)表示沿（A)之B-B’線 -23- 201246618 切斷之斷面圖。圖示之第2 LED封裝基板9係形成搭載 LED晶片2的凹部1 7。於該凹部1 7兩側至少設置左右壁 部18、19，另外，設置和該左右壁部18、19連結、而且 正交的前後壁部20、21，達成由左右前後實施樹脂密封之 機能》僅於左右設置壁部時，於後續工程，係於LED封 裝基板9上安裝LED晶片2之後，於模具內實施樹脂密 封時，藉由左右壁部18、19限制流向圖中左右方向之樹 脂，流向前後方向之樹脂，則藉由封裝基板之邊緣部處理 ，例如僅於邊緣部設置壁部予以限制。 左右壁部18、19上面之金屬箔（及其上之銀鍍敷層 26)係作爲一對連接電極6(連接於配線基板8(參照圖1 )之外部連接電極6)之機能。另外，用於電氣分離一對 連接電極6的縫隙14被形成於金屬箔（及其上之銀鍍敷 層26 )。如後述說明，LED晶片2被安裝於藉由縫隙14 分割之其中一方金屬箔之上。 如上述說明，第2LED封裝基板9係具備：搭載LED 晶片2而進行電連接的平板狀底部，及位於該底部之左右 前後，於由底部端折彎向上之方向，朝和LED晶片2之 發光方向同一側延伸之左右及前後壁部。平板狀底部22 具有於其上面安裝LED晶片2，形成將該一對連接電極6 連接的連接部201之充分之面積。欲於底部進行接合連接 ，製程上需要某種程度之間隔，LED晶片2較好是位於光 學中央，因此，平板狀底部22之長邊長度L，較好是設 爲短邊m之2倍〜20倍，更好是3倍〜1 0倍（參照圖2 1 -24- 201246618 之後述說明之實施例3)。另外’如後述說明’於具有該 大面積之平板狀底部22之下面’與其相接安裝散熱體之 故，LED晶片2之散熱可以有效傳遞至散熱體。一對左右 壁部之前端面之金屬箔係作爲連接電極6 (外部連接電極 6)之機能。 以下，參照圖8說明第3LED封裝基板9之製造。第 3 LED封裝基板9之開口部28，係具有LED晶片2之安裝 用的足夠之開口寬度，此點和第1及第2 LED封裝基板9 不同。 圖8表示第3LED封裝基板9之彎曲加工說明圖。（a )表示待加工之金屬板1 2之側面圖。（b )表示於（a ) 之金屬板12之上，貼合由樹脂層（例如聚醯亞胺膜）與 金屬箔（例如銅箔23 )構成之積層膜者。之後，如（c ) 所示，對該積層膜進行衝孔加工而設置開口部28。如此則 ，可藉由衝孔對樹脂層與金屬箔同時開口。 如後述說明，該開口部28，係對左右兩側之銅箔23 實施電氣絕緣分離之同時，形成LED晶片2之安裝用空 間。於兩側被分離的銅箔23可被利用作爲LED晶片2之 連接配線。另外，不限定於銅箔23，亦可使用鋁等高熱傳 導性金屬箔（金屬層）。 之後’如（d )所示，使用接著材7，將形成有開口部 28之積層膜之聚醯亞胺膜側，貼合於如（a )所示金屬板 12之上。或者，於接著材7/聚醯亞胺樹脂/金屬箔（銅箔 23)構成之積層體，針對相當於晶片搭載處之部分進行衝 -25- 201246618 孔而設置開口部28，亦可使接著於金屬板12。接著材7 較好是具有絕緣性，但因不存在於LED晶片2下之故， 無須具備熱傳導性。如此則，成爲樹脂層（聚醯亞胺膜） 與接著材層構成之2層絕緣層（參照圖2)，被金屬板12 與金屬箔挾持之積層構成。或者，該絕緣層亦可設爲，參 照圖5而僅使上述樹脂層（聚醯亞胺膜），被挾持於金屬 板12與金屬箔之間之構成。該挾持構成，係對熱壓接性 之聚醯亞胺樹脂與金屬箔（銅箔23)構成之積層體，實施 高溫加壓使接著於金屬板12。另外，將被焊接於配線基板 8 (參照圖1)的連接電極6前端側之一部分除去而設置銅 箔除去部。 之後，如（e)所示，針對已貼合著積層膜的金屬板 12進行彎曲加工。該彎曲加工，係使搭載LED晶片2之 實施樹脂封裝用的凹部17，及上部朝外方向折彎而形成連 接電極6的方式，藉由使用模具之沖壓加工進行。 之後，如（f)所示’於金屬箔上面全部實施，作爲 LED晶片2之發光之反射材機能的金屬表面處理（例如銀 鍍敷層26)。 如此則，圖8之第3LED封裝基板9，除了 LED晶片 2被安裝於開口部28以外，均和上述第1或第2 LED封裝 基板9爲同一構成。 圖9表示LED封裝1組裝之第丨例之圖。如（a )所 示LED封裝基板9’係和如圖2〜圖4所示，第1 LED封 裝基板9或圖5〜圖7所示第2LED封裝基板9爲同一者 -26- 201246618 。於該該LED封裝基板9之平板狀底部22之表面之被實 施Ag鍍敷的金屬箔30之上，如圖（b)所示，使用接著 材7將LED晶片2予以固定。該LED晶片2係於上面具 有LED發光面。LED晶片2雖僅例示1個，但可搭載複 數個（參照圖1 3 )。 之後’如（c )所示，針對LED晶片2與作爲連接配 線之機能的金屬箔之間進行導線接合。將LED晶片2固 定於LED封裝基板9之底部金屬箔之上後，針對2分割 金屬箔上之個別連接部201與LED晶片2之一對連接電 極6間，藉由接合導線27進行導線接合。如上述說明， 於金屬箔之上被形成作爲反射材機能的銀鍍敷層26，該銀 鍍敷層26亦發揮提升導線接合性之機能。 之後，於（d )所示樹脂封裝，使用透明樹脂3 (材質 爲例如環氧系列或矽系列）進行樹脂密封（傳遞模塑或 (potting))。可於透明樹脂3混合螢光體。通常白色LED 時，使用藍色發光LED晶片2而於LED晶片2上配置黃 色螢光體，該螢光體承受藍色而發光白光，通常，該螢光 體大多混入透明樹脂3。樹脂密封係將連結狀態之封裝配 置於模具內進行。樹脂密封亦可藉由分配器或網版印刷進 行。密封樹脂之高度，係注入至和作爲連接電極6之機能 的壁部前端面同一平面。之後’切割成爲各個封裝或複數 個連結狀態之封裝，而完成LED封裝1。 圖1 0表示LED封裝1組裝之第2例之圖。如（a )所 示LED封裝基板9，銀鍍敷層之金屬箔30，係由覆晶安 -27- 201246618 裝用之配線用圖案形成’此點和上述第1或第2 LED封裝 基板9不同。之後，如（b)所示，於該覆晶安裝用之配 線圖案上之連接部201，實施LED晶片2之覆晶安裝。之 後，如（c )所示，進行和圖9說明同樣之密封樹脂。 圖11表示LED封裝1組裝之第3例之圖。如（〇所 示LED封裝基板9，係和如圖8所示第3例之LED封裝 基板9爲同一者。於該LED封裝基板9之開口部28 ’於 金屬板12之上，如（b)所不’將LED.晶片2固定。該 晶片固定可使用銀糊、金矽共晶或耐米銀糊（燒結後具有 銀之特性）等之晶粒接合材進行。LED晶片2係於上面具 有LED發光面。LED晶片2雖僅圖示1個，但可搭載複 數個晶片。 之後，如（c )所示，進行LED晶片2和作爲連接配 線之機能的金屬箔間之導線接合。使安裝之LED晶片2 之一對電極與被左右2分割的金屬箔之各個，藉由接合導 線27分別進行導線接合。如上述說明，於金屬箔上形成 作爲反射材之金屬表面處理（銀鍍敷層26)。該銀鍍敷層 26亦可發揮提升導線接合性之機能。 之後，如（d )所示，和上述例同樣進行密封樹脂。 之後，實施切片使成爲各個封裝或複數個連結狀態之封裝 ，而完成LED封裝^ 圖12(A)表示和圖11之LED封裝1之組裝不同之 另一例，（B)表示再另一例之斷面圖。（A)之LED封 裝基板9本身係和圖8之第3例之LED封裝基板9爲同 -28- 201246618 一。但是連接電極6不同。例示之構成中，不僅介由絕緣 膜形成於金屬板12上的金屬箔（及金屬表面處理），亦 作爲連接電極6使用。 LED晶片2，係於LED封裝基板9之開口部28，於 金屬板12上進行電氣及機械固定。LED晶片2之一對電 極之其一被形成於其上面，另一電極則被形成於LED晶 片2之下面，晶片之固定可使用銀糊、金矽共晶或耐米銀 糊（燒結後具有銀之特性）等之導電性晶粒接合材（導電 性接著材·7)進行。藉由使用該導電性接著材之固定，同 時完成晶片下面之電極與金屬板1 2間之電連接。如此則 ，圖中右側之連接電極6藉由上端側之金屬箔構成，相對 於此，圖中左側之連接電極6則藉由上端側之金屬板12 側面構成。另外，將左側之連接電極6之上端側之絕緣層 及金屬箔除去，亦可將上面側設爲連接電極6。 或者，於LED晶片2上面設置一對電極，將其雙方 予以導線接合亦可。此時，一方之導線接合於金屬箔，另 一方之導線則連接於金屬板12之平板狀底部22上面。之 後，和上述例同樣進行密封樹脂。 圖1 2 ( B )之封裝基板，於圖右側係和（A )之例同 樣，LED晶片2之一電極所連接之金屬箔（及其上之金屬 表面處理）係藉由絕緣層形成於金屬板1 2上，相對於此 ，於圖左側之金屬板1 2上僅形成作爲反射材的金屬表面 處理，未貼合絕緣層及金屬箔。金屬表面處理，係於金屬 板1 2上之必要位置使用銀墨進行噴墨塗佈，燒結形成光 -29- 201246618 澤面（反射材）而進行。 圖1 3表示LED封裝1組裝之第4例之圖，（A)表 示完成之LED封裝1之上面圖，（B)表示側面斷面圖。 於例示之LED封裝基板9，實施銀鍍敷的金屬箔30，係 藉由左右兩側之2個縫隙14實施3分割。於該3分割之 中央之金屬箔上搭載複數個（6x6個之例示）LED晶片2 ，LED晶片2相互之配線5及LED晶片2與金屬箔間配 線5，係使用接合導線27連接。 圖14表示本發明具體化之LED模組裝置1000之第1 例（參照圖1 )之組裝說明圖。首先，如（a )所示，準備 LED封裝1(參照圖9，.或可使用圖10-圖13之LED封裝 1 )及具有相當於該LED封裝1之開口部28的配線基板8 (例如1層玻璃環氧基板），於該配線基板8之開口部2 8 配置LED封裝1。於LED封裝1側面與配線基板8之間 塡埋接著材7(耐熱性及絕緣性之接著材7)。之後，如 (M所示，於該接著材7上，針對LED封裝1之一對連 接電極6，藉由焊接或噴墨之銅或銀等予以連接於配線基 板8上面之配線5。L E D晶片2之發光面朝向圖中上面側 ’不會被LED封裝基板9遮蔽而可朝上面發光。 之後，如（c )所示，將安裝有配線基板8的LED封 裝1，藉由焊接予以固定於散熱板1 〇 (例如銅或鋁板）。 &者’取代該焊接，而可以使用高熱傳導性之接著材7進 行接著。亦可取代散熱板10，直接固定於框體。 圖15表示本發明具體化之LED模組裝置1 000之第2 -30- 201246618 例之側面斷面圖。例示之LED模組裝置1 000係使用圖1 1 之LED封裝1之第3例作爲LED封裝1，僅此點和圖14 說明之LED模組裝置1 000之第1例不同。省略其詳細說 明。 圖16表示本發明具體化之LED模組裝置1〇〇〇之第3 例之側面斷面圖》例示之LED模組裝置1 〇〇〇係使用圖1 2 (A)之LED封裝1作爲LED封裝1，僅此點和上述說明 之LED模組裝置1 000之第1例或第2例不同。同樣，可 使用參照圖12(B)說明之LED封裝1。因此，省略其詳 細說明。 圖17表示本發明具體化之LED模組裝置1 000之第4 例之組裝說明圖。該第4例係使用配線基板8作爲散熱體 。因此，例示之配線基板8不具備LED封裝1之安裝用 開口部28，LED封裝1被安裝於配線基板8上面，此點 和上述例不同。LED模組裝置1〇〇〇之第4例之組裝，首 先，如（a )所示，於熱傳導性良好的配線基板8 (例如上 述塡充有多數氮化鋁等之熱傳導性塡料之1層玻璃環氧基 板）上之特定位置，使用接著材7 (耐熱性及絕緣性之接 著材7 )，將上述LED封裝1 (參照圖9-圖13 )予以固定 。或者，於配線基板8上設置獨立之配線圖案，藉由焊接 而固定亦可。之後，如（b )所示，於LED封裝1側面與 配線基板8之間塡埋絕緣性接著材7。之後，如（c )所示 ’於該絕緣性接著材7上，針對LED封裝1之一對連接 電極6，藉由焊接或噴墨之銅或銀等予以連接於配線基板 -31 - 201246618 8上面之配線5。LED晶片2之熱係由LED封裝基板9介 由配線基板8散熱。 圖18表示本發明具體化之LED模組裝置1 000之第5 例之說明圖，（A)表示其斷面圖，（B )表示於配線基板 8安裝有3個LED封裝1之狀態之上面圖。準備上述LED 封裝1(參照圖9-圖13)及具有相當於該LED封裝1之 開口部28的配線基板8。配線基板8可設爲例如背面具有 配線層的1層玻璃環氧基板，爲了光之放射儘可能將配線 基板8設爲較薄，亦可使用聚醯亞胺之帶狀基板。於配線 基板8設置開口時，基板之厚度分將成爲壁部，接觸此處 之光成爲光損。因此，該壁部.厚度較薄較好。欲減少該光 損，可增大配線基板8之開口面積，使LED封裝1之連 接部2 0 1構成爲較小的爪狀。於配線基板8之表面可塗佈 白色阻劑亦獲得反射效果。於配線基板8之開口部28配 置LED封裝1，將LED封裝1上面連接電極6焊接於配 線基板8背面之配線5。如圖所示，連接電極6較金屬板 12端更進入內側，焊錫4不會溢出金屬板12端部。連接 電極6延伸至金屬板12端部時焊錫4橋接於薄的絕緣層 上之危險性變高。LED晶片2之發光面朝向圖中上面側， 不會被LED封裝基板9遮蔽而可朝上面發光。 將安裝有配線基板8的LED封裝1，藉由焊接予以固 定於散熱板1〇(例如銅或鋁板）之上。或者’取代該焊接 ，而可以使用高熱傳導性之接著材7進行接著。亦可取代 散熱板1 〇，直接固定於框體。 -32- 201246618 圖19表示本發明具體化之LED模組裝置1000之第6 例之說明圖，（A)表示連結構成之LED封裝1之上面圖 ’ （B)表示將該連結構成之LED封裝1安裝於配線基板 8之狀態之沿A-A’線切斷之斷面圖。連結構成之LED封 裝1，係藉由連結部32將複數個（例示爲4個）LED封 裝1連結者。連結部32，爲迴避縮小加工時之變形，而於 連結部32兩側形成部分切除部31。藉由連結部32之連結 ，可實施電性串聯連接之同時，賦予連結構成之LED封 裝1之柔軟性，可安裝於具有凸面形狀或凹面形狀等任意 外表面形狀的散熱構件或框體等散熱體上。於連結構成之 LED封裝1之最兩端側不存在連結部32，於此形成連接 電極6。該連結構成之LED封裝1被安裝於配線基板8。 對配線基板8上之安裝，係如上述圖14之說明，於LED 封裝1側面與配線基板8之間塡埋絕緣性接著材7之後， 於該絕緣性接著材7上，藉由焊接或噴墨銅或銀等，而將 連結構成之LED封裝1之一對連接電極6連接於配線基 板8上面之配線5。 (實施例1 ) 圖20表示LED接合（junction)溫度與膜厚關係之 圖表。於以下解析條·件進行解析。封裝尺寸：4mmx4rnm， 散熱部面積1.5mmxl.5mm，消費電力：1W，周圍溫度Ta :60 °C。圖表橫軸表示聚醯亞胺樹脂層厚度，縱軸表示接 合溫度。 -33- 201246618 通常LED接合溫度較好是120°C以下，欲以4mmx 4mm之封裝實現此時，聚醯亞胺16之膜厚需要設爲40μιη 以下。另外’更好是設定膜厚爲20 μιη以下，而將LED接 合溫度設爲100C以下》 作爲LED之金屬基板上之絕緣膜，除上述熱傳導性 以外需要滿足以下特性。 (1 )絕緣性 欲以薄膜具有可靠絕緣性，因此需要具備高的絕緣破 壞電壓。聚醯亞胺16之標準之絕緣破壞電壓約爲 150kV/mm，高性能品爲約500kV/n?m，通常之工程塑膠約 爲1 5〜30kV/mm。因此，如上述說明，藉由使用高性能之 聚醯亞胺16可薄至5 μιη之厚度。 (2 )耐熱性 需要具有焊接耐熱性（26 0°C )，需要耐LED之發熱 。聚醯亞胺之熱分解溫度爲5 00°C以上，具有極佳性能。 (3 )熱可塑性 聚醯亞胺16具有熱可塑性及熱硬化性，但就沖壓成 形之耐變形性能而言，須爲熱可塑性聚醯亞胺。 (4 )機械強度 具有不因應力而產生裂痕之機械強度。 -34- 201246618 (5 )彎曲性 聚醯亞胺1 6係使用於可撓性基板，具有極佳性能。 (6)長期穩定性 以上之特性經長期乃不劣化而呈穩定。 (實施例2 ) (金屬板12/聚醯亞胺16/銅箔積層體之作成） 於金屬板12上塗佈熱可塑性聚醯亞胺系樹脂溶液時 ，係針對熱可塑性聚醯亞胺氫漆之「LUPITITE UPA-N221C」（商品名：宇部興產公司製造），藉由四氫呋喃 稀釋成爲固形分1 5%之溶液而予以塗佈，進行加熱使溶媒 乾燥而製成膜。 於金屬板12上塗佈熱可塑性聚醯亞胺系樹脂之前驅 體的聚醯胺酸溶液，係以四羧酸二酐及二胺爲原料實施等 莫耳（mole)聚合而成爲包含聚醯胺酸之溶液，將該溶液 予以塗佈，慢慢加熱實施醯亞胺化閉環溫度以下之脫溶劑 處理之後，最後加熱至3 00〜400°C進行醯亞胺化閉環反應 ，而轉化成爲聚醯亞胺16。 於專利文獻4，作爲四羧酸二酐成份而揭示3,3，，4,4’_ 聯苯四羧酸二酐，作爲二胺成份而揭示m-苯二甲基與 1,3 -二（4 -胺苯氧基）苯。另外，於專利文獻5，作爲四 羧酸二酐成份而揭示3,3’，4,4’-二苯甲酮四羧酸二酐，作 -35- 201246618 爲二胺成份而揭示於1，3- ( 3-胺苯氧基）苯共聚 (3-順丁稀二醯抱亞胺苯氧基）者。 塗佈方法不限定於此，可藉由習知條碼塗佈 佈、die-coater 、 comma-coater 、 gravure-coater 佈、噴塗等方法進行。 或者，使市售之熱可塑性聚醯亞胺薄膜（ Mi d fi I )挾持於金屬板12與銅箔23，於加熱加 而獲得金屬板12/聚醯亞胺16/銅箔23之積層體< (實施例3) 圖21 (A)表示散熱特性（熱阻抗比）之礓 )表示安裝於散熱板10上之LED封裝1之構成 (B )所示，LED晶片2之尺寸設爲m，而且金| 接於散熱板1〇之長度設爲L »於（A)之圖表， m之倍數變化的L之長度（lm〜5m)(及其之 散熱面積），而且縱軸將計算求得之熱阻抗比以 L=lm時之熱阻抗設爲1)予以表示。算出時， 框架之熱傳導率：3 00W/mk，聚醯劈胺16之熱 0.5W/mk，銅箔23之熱傳導率：400W/mk。銅箔 度爲9μιη，金屬板12之厚度爲125μιη，聚醯亞 度分別爲5/10/30μηι之各個，依據傅立葉法則算 之熱阻抗。各構件之熱阻抗成爲熱阻抗θ =構件厚 傳導率λχ散熱面積）。合計熱阻抗係將銅箔23 胺16、及金屬板12之各個予以計算、合計。 合 1，3 - _ 、滾筒塗 、簾式塗 KURABO 壓下接合 3 表，（Β 之圖。如 I板1 2連 橫軸取以 二次方之 任意値（ 設定引線 傳導率： 23之厚 芒16之厚 出各構件 度t/ (熱 、聚醯亞 -36- 201246618 如圖21 (A)所示，設定L = 2m時熱阻抗降爲極低。 其以下時，無法充分散熱，熱回儲存而成爲損傷之原因。 隨著L之長度增長，熱阻抗雖降低，但當增長至L = 5m以 上時變爲幾乎無變化，無法再往上提升散熱效果。L之長 度增長則不利於成本，因此設定邊長比L = 2m〜20m之範 圍，較好是設爲3m〜10m之範圍。 以上詳細說明幾個實施形態，但於實質上不脫離本發 明之揭示及有利效果範圍內可以變更實施形態之實施例。 (發明效果） 依據本發明，係使用加工性及熱傳導性良好的金屬板 作爲LED封裝基板，而且使用能確保和安裝於其之LED 晶片之連接配線間之絕緣性的絕緣層，對LED封裝基板 形狀採取對策，於平板狀底部確保大的面積，介由該大的 面積對散熱體實施導熱而構成，如此則，可提升由LED 晶片對散熱體之熱傳導性。 本發明之LED封裝基板，係藉由設爲金屬-2層絕緣 層（聚醯亞胺+接著材層）-金屬之4層構造，絕緣用之樹 脂層（聚醯亞胺）可爲極薄，接著材料係混合低熱阻抗的 塡料，如此則，相較於絕緣層可以改善熱傳導性大約10 倍’可減少整體之熱阻抗。另外，本發明之LED封裝基 板，藉由對金屬板與金屬箔之間挾持的絕緣層所構成之積The first LED package substrate 9 shown in the drawing forms a recess 17 in which the LED chip 2 is mounted. The left and right wall portions 18 and 19 are provided on both sides of the recessed portion 17, and the front and rear wall portions 20 and 21 which are connected to the left and right wall portions 18 and 19 and are orthogonal to each other are provided with a resin sealing function. The metal foil (and the silver plating layer 26 thereon) on the upper and lower wall portions 18, 19 serves as a pair of connection electrodes 6. A slit 14 for electrically separating a pair of connection electrodes 6 is formed on the metal foil (and the silver plating layer 26 thereon). As will be described later, the LED chip 2 is mounted on one of the metal foils divided by the slit 14 and the first LED package substrate 9 is provided with a flat bottom portion on which the LED chip 2 is mounted, and left and right of the bottom portion. And the left and right and front and rear wall portions extending toward the same side as the light emitting direction of the LED chip 2 in a direction in which the bottom end is bent upward. The metal foil of the pair of front and rear wall portions is used as the function of the connection electrode 6. The direction in which the left and right wall portions are raised from the bottom end does not necessarily need to be orthogonal, so that the connection electrode 6 is positioned above the flat bottom portion, for example, in a straight line or in a curved upward direction. In the illustrated example, the metal foil of the flat bottom portion and the front and rear wall portions is divided into two by the slit 14, and the pair of connection electrodes 6 are separated from each other. As will be described later (see Fig. 9), the LED chip 2 is mounted on one of the two divided bottom metal foils, and one of the wire bonds is joined, and the other of the two divided bottom metal foils is subjected to the other wire bonding. 4 is a view showing another example different from FIG. 3 of the first LED package substrate 9. (A) shows a state in which a plurality of LED package substrates 9 are connected. FIG. 19-201246618, (B) shows that only one of them is taken out. (C) is a cross-sectional view taken along line A-A' of (B), and (D) is a cross-sectional view taken along line B-B' of (B). In the same manner as in Fig. 3, an example in which 5x14 LED package substrates 9 are simultaneously formed on one metal plate 12 will be described. The first LED package substrate 9 of Fig. 4 is provided with a wall portion only on the left and right sides of the concave portion 17, and this point is different from Fig. 3 in which the wall portion is provided not only on the left and right but also on the front and rear sides. In the subsequent process, after the LED chip 2 is mounted on the LED package substrate 9, when resin sealing is performed in the mold, the resin flowing in the left-right direction in the drawing is restricted by the left and right wall portions 18 and 19, and the resin in the forward and backward directions is flown. The edge portion of the package substrate is treated, for example, only by providing a wall portion at the edge portion. The description of his composition is the same as that of Figure 3. The manufacture of the second LED package substrate 9 will be described below with reference to Figs. The insulating layer used for the second LED package substrate 9 is formed of a polyimide resin, and the resin layer (polyimine film) and the second layer of the first LED package substrate 9 described with reference to FIGS. The insulating layers of the layers are different. FIG. 5 is a view showing a bending process of the second LED package substrate 9. Figure 5 (a) shows a side view of the metal plate 12 to be processed. As shown in Fig. 2(b), a metal foil (e.g., copper foil 23) is bonded to the metal plate 12 by an insulating layer made of a polyimide resin to form a laminate. Therefore, first, a metal foil (or a metal plate 12) is coated with a solution obtained by dissolving a polyimide polyimide resin containing a thermoplastic polyimide in a solvent, and after drying, a metal foil (or a metal plate I2) is applied. Hot crimping. Generally, considering the flatness of the metal plate 12 and the metal foil, in order to secure a certain insulation withstand voltage, a polyimide film having a film thickness of at least 5 μm should be applied. From the viewpoint of heat dissipation characteristics, the thinner the thickness of the polyamide resin -20-201246618, the better, but a certain thickness is required from the viewpoint of insulation withstand voltage and fracture strength. When the polyimide resin layer is used as the insulating layer, the insulation withstand voltage of the insulating film required for LED mounting is usually 2.5 to 5 kV. The dielectric withstand voltage of the polyimide resin varies depending on the structure, but is several hundred. 5 0〇ν/μιη ' Therefore a minimum thickness of 5 μιη is necessary. Further, when the heat dissipation effect is to be enhanced, the polyimide layer may not be thickened, and the thickness thereof is 40 μm or less, preferably 20 μm or less (see Example 1 described later with reference to Fig. 20). As another method of constituting the laminate. On the metal plate 12, at least one polyimide intermediate resin layer which can be converted into a thermoplastic polyimine resin is first applied (see Example 2). Thereafter, heat treatment of the precursor resin layer is performed to form a thermoplastic polyimide-based resin layer. On the thermoplastic polyimide-based resin layer, the copper foil 23 is heated and pressed to be joined to form a laminate. Alternatively, when a laminate is to be formed, first, a polyimide polyimide precursor layer which can be converted into a thermoplastic polyimide is coated on the copper foil 23 instead of the metal foil 12. After the heat treatment of the precursor resin layer is carried out to form a thermoplastic polyimide-based resin layer, heat and pressure are applied to laminate the metal plate 12 as a metal plate. As described above, in order to improve the heat dissipation characteristics, the insulating layer is made as thin as possible, and a specific film thickness is required to secure the breakdown voltage, and a film thickness of the flatness is required, and it is necessary to apply a film thickness necessary for the insulation withstand voltage or higher. Therefore, in order to reduce the variation and ensure a certain film thickness, the spherical spacer particles can be mixed with the polyimide resin (for example, the product of the Sekisui Chemical Industry: micro pearl SI ball-21 - 201246618 plastic microparticles (3~500μπι') High compressibility. In addition, in addition to the spacer particles, or in combination, it is possible to further improve the heat dissipation characteristics by mixing a pigment having a smaller thermal conductivity than the spacer particles in the polyimide resin. For thermally conductive materials, aluminum nitride, aluminum oxide coated metal particles (for example, copper), or alumina coated carbon particles or fibers may be used. Generally, the heat conductive conductive material reduces electrical insulation resistance. However, the coating of the insulating layer can be thickened, and the control of the film thickness becomes easy. As described above, the insulating layer composed of the polyimide resin containing the thermoplastic polyimide is provided by the metal plate 12 and the metal foil. By holding the layer structure, the film thickness of the insulating layer can be controlled to a specific thickness (5 μm to 40 μm). By the insulating layer, not only one pair of the LED chips 2 can be performed. The copper foil 23 may be used as the connection wiring 5 of the LED wafer 2. The copper foil 23 is not limited to the copper foil 23, and a highly thermally conductive metal foil (metal layer) such as aluminum may be used. As shown in Fig. 5 (c), the metal foil to be joined is formed to form the opening of the slit 14 and the copper foil removing portion 25 (see the detailed description of Fig. 2(c)). The polyimine resin layer is present, and the upper layer is The etching process of the copper foil 23 becomes easy. The slit 14 portion, because it does not function as a reflective material for the light emission of the LED chip 2, is therefore narrower and better, and it is preferable to insulate and separate the metal foil on both sides of the slit 14. It is about 20 Mm to 100 Mm. As shown in Fig. 5 (d), the laminate of the copper foil 23, the polyimide resin layer, and the metal plate 12 is bent (see the detailed description of Fig. 2(d)). - 201246618 As shown in Fig. 2 (see Fig. 2), a metal (for example, silver) plating layer (metal surface treatment) functioning as a reflective material for the light emission of the LED chip 2 is performed on the entire surface of the metal foil. e) Detailed description) "This is the case of the full metallurgy on the metal plate 12 Reflective treatment. Although the metal reflection treatment is performed after the bending of the laminated body, the metal reflection treatment may be performed before the bending processing. In this case, the punching of the laminated body is covered with the protective tape over at least the metal reflective processing surface. Fig. 6 is a view showing the completed second LED package substrate 9, (A) showing a state in which a plurality of LED package substrates 9 are connected, and (B) showing only one LED taken out. A diagram of the package substrate 9. In the illustrated example, an example in which 5x14 LED package substrates 9 are simultaneously formed on one metal plate 12. In the subsequent process, the LED chip 2 is mounted on the LED package substrate 9 to perform resin sealing. Thereafter, the slices are sliced into individual packages or arbitrarily connected packages. As shown in Fig. 6(B), in order to reduce the deformation during bending of the laminated body to the peripheral portion, the void portion 103 is formed around the package substrate region 101. The metal plate 12 is joined to the periphery via a joint portion 102 provided around the package substrate region 101. The joint portion 102 is cut at the time of the subsequent processing. The inside of the package substrate region 101 will be described later in detail with reference to Fig. 7 . 7 is a detailed view of the second LED package substrate 9. (A) shows a view in which only one LED package substrate 9 is taken out, and (B) shows a cross-sectional view taken along line A-A' of (A). C) shows a cross-sectional view taken along line B-B' of -23-201246618. The second LED package substrate 9 shown in the drawing forms a recess 17 in which the LED chip 2 is mounted. At least the left and right wall portions 18 and 19 are provided on both sides of the recessed portion 17 , and the front and rear wall portions 20 and 21 which are connected to the left and right wall portions 18 and 19 and which are orthogonal to each other are provided with a resin sealing function. When the wall portion is provided only on the right and left sides, after the LED chip 2 is mounted on the LED package substrate 9 in the subsequent process, when the resin sealing is performed in the mold, the resin flowing in the left-right direction in the drawing is restricted by the left and right wall portions 18, 19. The resin flowing in the forward and backward directions is treated by the edge portion of the package substrate, for example, only the wall portion is provided at the edge portion. The metal foil on the upper and lower wall portions 18, 19 (and the silver plating layer 26 thereon) function as a pair of connection electrodes 6 (connected to the external connection electrode 6 of the wiring substrate 8 (see Fig. 1). Further, a slit 14 for electrically separating the pair of connection electrodes 6 is formed on the metal foil (and the silver plating layer 26 thereon). As will be described later, the LED chip 2 is mounted on one of the metal foils divided by the slit 14. As described above, the second LED package substrate 9 includes a flat bottom portion on which the LED chip 2 is mounted and electrically connected, and a light-emitting direction toward the LED chip 2 in a direction in which the bottom end is bent forward and upward in the front and rear directions of the bottom portion. The left and right sides and the front and rear wall portions extending on the same side. The flat bottom portion 22 has an LED chip 2 mounted thereon, and a sufficient area of the connecting portion 201 connecting the pair of connecting electrodes 6 is formed. In order to perform the joint connection at the bottom, the process requires a certain degree of spacing, and the LED chip 2 is preferably located at the center of the optical. Therefore, the long side length L of the flat bottom portion 22 is preferably set to twice the short side m. 20 times, more preferably 3 times to 10 times (see Fig. 2 1 - 24 - 201246618, the embodiment 3 described later). Further, as will be described later, the heat sink of the LED chip 2 can be efficiently transmitted to the heat sink by attaching the heat sink to the lower surface of the flat bottom portion 22 having the large area. The metal foil of the front end faces of the pair of left and right wall portions functions as the connection electrode 6 (external connection electrode 6). Hereinafter, the manufacture of the third LED package substrate 9 will be described with reference to FIG. The opening portion 28 of the third LED package substrate 9 has a sufficient opening width for mounting the LED chip 2, which is different from the first and second LED package substrates 9. FIG. 8 is a view showing a bending process of the third LED package substrate 9. (a) shows a side view of the metal plate 12 to be processed. (b) A laminated film comprising a resin layer (e.g., a polyimide film) and a metal foil (e.g., copper foil 23) is bonded to the metal plate 12 of (a). Thereafter, as shown in (c), the laminated film is punched and the opening portion 28 is provided. In this case, the resin layer and the metal foil can be simultaneously opened by punching. As will be described later, the opening portion 28 forms a space for mounting the LED wafer 2 while electrically insulating the copper foils 23 on the left and right sides. The copper foil 23 separated on both sides can be utilized as the connection wiring of the LED chip 2. Further, it is not limited to the copper foil 23, and a high heat conductive metal foil (metal layer) such as aluminum may be used. Then, as shown in (d), the polyimide film 7 on which the laminated film of the opening portion 28 is formed is bonded to the metal plate 12 as shown in (a) by using the adhesive material 7. Alternatively, in the laminate of the laminate 7/polyimine resin/metal foil (copper foil 23), the opening portion 28 may be provided for the portion corresponding to the wafer mounting portion, and the opening portion 28 may be provided. On the metal plate 12. The material 7 is preferably insulating, but it does not need to have thermal conductivity because it does not exist under the LED chip 2. In this manner, the resin layer (polyimine film) and the second layer of the insulating layer (see FIG. 2) are laminated, and the metal plate 12 and the metal foil are laminated. Alternatively, the insulating layer may be configured such that only the resin layer (polyimine film) is held between the metal plate 12 and the metal foil with reference to Fig. 5 . This sandwich structure is a laminate comprising a thermocompression-bonding polyimide resin and a metal foil (copper foil 23), and is subjected to high-temperature pressurization to be applied to the metal plate 12. Further, a part of the front end side of the connection electrode 6 soldered to the wiring board 8 (see Fig. 1) is removed to provide a copper foil removing portion. Thereafter, as shown in (e), the metal plate 12 to which the laminated film has been bonded is subjected to bending. This bending process is performed by press working using a die so that the recessed portion 17 for resin package in which the LED chip 2 is mounted and the upper portion are bent outward to form the connection electrode 6. Thereafter, as shown in (f), all of the metal foil is subjected to metal surface treatment (e.g., silver plating layer 26) as a function of the light-emitting reflective material of the LED wafer 2. As described above, the third LED package substrate 9 of Fig. 8 has the same configuration as the first or second LED package substrate 9 except that the LED chip 2 is mounted on the opening 28. Fig. 9 is a view showing a third example of assembly of the LED package 1. As shown in Fig. 2 to Fig. 4, the LED package substrate 9' shown in (a) is the same as the first LED package substrate 9 or the second LED package substrate 9 shown in Figs. 5 to 7 -26-201246618. On the metal foil 30 to which Ag is plated on the surface of the flat bottom portion 22 of the LED package substrate 9, as shown in Fig. (b), the LED wafer 2 is fixed using the bonding material 7. The LED chip 2 is attached to the upper mask with an LED light emitting surface. Although only one LED wafer 2 is illustrated, a plurality of LED chips 2 can be mounted (see Fig. 13). Thereafter, as shown in (c), wire bonding is performed between the LED chip 2 and the metal foil as a function of the connection wiring. After the LED chip 2 is fixed on the bottom metal foil of the LED package substrate 9, the individual connecting portions 201 on the two-divided metal foil and the one pair of the LED chips 2 are connected to the electrodes 6, and the wires are bonded by the bonding wires 27. As described above, the silver plating layer 26 functioning as a reflective material is formed on the metal foil, and the silver plating layer 26 also functions to improve the wire bonding property. Thereafter, in the resin package shown in (d), resin sealing (transfer molding) is carried out using a transparent resin 3 (material such as an epoxy series or a tantalum series). The phosphor can be mixed with the transparent resin 3. In the case of a white LED, a yellow phosphor is disposed on the LED chip 2 using the blue light-emitting LED chip 2, and the phosphor receives blue light and emits white light. Usually, the phosphor is often mixed with the transparent resin 3. The resin sealing is carried out by placing the package in a connected state in a mold. The resin seal can also be carried out by dispenser or screen printing. The height of the sealing resin is injected into the same plane as the front end surface of the wall portion which functions as the connection electrode 6. Thereafter, the package is cut into individual packages or a plurality of connected states, and the LED package 1 is completed. Fig. 10 is a view showing a second example of assembly of the LED package 1. The LED package substrate 9 as shown in (a) and the metal foil 30 of the silver plating layer are formed by a pattern for wiring used in the flip-chip mounting of An-27-201246618. This point and the first or second LED package substrate 9 are used. different. Thereafter, as shown in (b), flip chip mounting of the LED wafer 2 is performed on the connection portion 201 on the wiring pattern for flip chip mounting. Thereafter, as shown in (c), the same sealing resin as that described in Fig. 9 was carried out. Fig. 11 is a view showing a third example of assembly of the LED package 1. For example, the LED package substrate 9 is the same as the LED package substrate 9 of the third example shown in FIG. 8. The opening portion 28' of the LED package substrate 9 is on the metal plate 12, such as (b) The LED chip 2 is not fixed. The wafer can be fixed by using a grain bonding material such as silver paste, gold eutectic or rice-resistant silver paste (having silver characteristics after sintering). The LED chip 2 is attached to the above. The LED light-emitting surface is provided. Although only one of the LED chips 2 is shown, a plurality of wafers can be mounted. Then, as shown in (c), wire bonding between the LED chip 2 and the metal foil functioning as a connection wiring is performed. One of the pair of electrodes of the mounted LED chip 2 and the metal foil divided by the left and right sides are respectively wire-bonded by the bonding wires 27. As described above, a metal surface treatment (silver plating) is formed as a reflective material on the metal foil. Layer 26) The silver plating layer 26 can also function to improve the wire bonding property. Then, as shown in (d), the sealing resin is applied in the same manner as in the above example. Thereafter, the chip is formed into individual packages or a plurality of connected states. Package, and complete LED package ^ Figure 12 (A Another example is different from the assembly of the LED package 1 of Fig. 11, and (B) is a cross-sectional view showing still another example. The LED package substrate 9 of (A) itself and the LED package substrate 9 of the third example of Fig. 8 It is the same as -28-201246618. However, the connection electrode 6 is different. In the illustrated configuration, not only the metal foil (and metal surface treatment) formed on the metal plate 12 via the insulating film but also the connection electrode 6 is used. It is electrically and mechanically fixed to the opening portion 28 of the LED package substrate 9 on the metal plate 12. One of the pair of electrodes of the LED chip 2 is formed thereon, and the other electrode is formed on the LED chip 2. Next, the fixing of the wafer can be carried out by using a conductive grain bonding material (conductive bonding material 7) such as a silver paste, a gold eutectic or a rice-resistant silver paste (having silver characteristics after sintering). The fixing of the material is completed, and the electrical connection between the electrode under the wafer and the metal plate 12 is completed at the same time. Thus, the connection electrode 6 on the right side of the figure is formed by the metal foil on the upper end side, whereas the connection on the left side in the figure is The electrode 6 is formed by the metal plate 12 on the upper end side. In addition, the insulating layer and the metal foil on the upper end side of the connection electrode 6 on the left side may be removed, and the upper surface side may be the connection electrode 6. Alternatively, a pair of electrodes may be provided on the upper surface of the LED chip 2, and both of them may be provided as wires. In this case, one of the wires is bonded to the metal foil, and the other wire is connected to the flat bottom 22 of the metal plate 12. Thereafter, the sealing resin is applied in the same manner as in the above example. Fig. 1 2 (B) The substrate is similar to the example of (A) in the figure, and the metal foil to which one electrode of the LED chip 2 is attached (and the metal surface treatment thereon) is formed on the metal plate 12 by an insulating layer. On the metal plate 12 on the left side of the figure, only a metal surface treatment as a reflective material is formed, and the insulating layer and the metal foil are not bonded. The metal surface treatment is carried out by ink-jet coating using a silver ink at a necessary position on the metal plate 12, and sintering to form a light -29-201246618 surface (reflective material). Fig. 13 is a view showing a fourth example of assembly of the LED package 1, (A) showing the upper view of the completed LED package 1, and (B) showing a side sectional view. In the illustrated LED package substrate 9, the metal foil 30 to which silver plating is applied is divided into three by two slits 14 on the left and right sides. A plurality of (6 x 6 exemplified) LED chips 2 are mounted on the metal foil at the center of the three divisions, and the wirings 5 of the LED chips 2 and the wiring 5 between the LED chips 2 and the metal foil are connected by a bonding wire 27. Fig. 14 is an explanatory view showing the assembly of a first example (see Fig. 1) of the LED module device 1000 of the present invention. First, as shown in (a), the LED package 1 (see FIG. 9, or the LED package 1 of FIGS. 10 to 13 can be used) and the wiring substrate 8 having the opening portion 28 corresponding to the LED package 1 (for example) The LED package 1 is placed on the opening portion 28 of the wiring board 8 in a single layer of glass epoxy substrate. The back material 7 (the heat-resistant and insulating material 7) is buried between the side surface of the LED package 1 and the wiring board 8. Thereafter, as shown by (M), the connection electrode 6 is connected to one of the LED packages 1 on the bonding material 7, and the wiring 5 is connected to the upper surface of the wiring substrate 8 by soldering or ink-jetting copper or silver. The light-emitting surface of 2 faces the upper surface side of the figure and is not shielded by the LED package substrate 9 and can emit light upward. Then, as shown in (c), the LED package 1 on which the wiring substrate 8 is mounted is fixed by soldering. The heat sink 1 〇 (for example, copper or aluminum plate) can be replaced by a high thermal conductivity backing material 7 instead of the soldering. It can also be directly fixed to the frame instead of the heat sink 10. Fig. 15 shows the present invention A side view of the second embodiment of the LED module device 1 000 - 201246618. The exemplary LED module device 1000 uses the third example of the LED package 1 of FIG. 1 as the LED package 1 only This point is different from the first example of the LED module device 1000 illustrated in Fig. 14. A detailed description thereof will be omitted. Fig. 16 is a side sectional view showing a third example of the LED module device 1 according to the present invention. The illustrated LED module device 1 uses the LED package 1 of Fig. 1 2 (A) as an LED package. 1. This point is different from the first example or the second example of the LED module device 1000 described above. Similarly, the LED package 1 described with reference to Fig. 12(B) can be used. Therefore, the detailed description thereof will be omitted. The assembly example of the fourth example of the LED module device 1 000 of the present invention is shown. The fourth example uses the wiring board 8 as a heat sink. Therefore, the illustrated wiring board 8 does not have the mounting opening of the LED package 1. In the portion 28, the LED package 1 is mounted on the upper surface of the wiring board 8. This is different from the above example. The assembly of the fourth example of the LED module device 1 first, as shown in (a), is excellent in thermal conductivity. The above-mentioned specific position on the wiring board 8 (for example, the one-layer glass epoxy board filled with the thermal conductive material of the some aluminum nitride etc.) is the above-mentioned material 7 (heat-resistant and insulating material 7) The LED package 1 (see FIGS. 9 to 13) is fixed. Alternatively, an independent wiring pattern may be provided on the wiring substrate 8 and fixed by soldering. Thereafter, as shown in (b), on the side of the LED package 1 and An insulating material 7 is buried between the wiring boards 8. Thereafter, as in (c) On the insulating adhesive member 7, the connection electrode 6 is connected to one of the LED packages 1, and is connected to the wiring 5 on the wiring substrate - 31 - 201246618 by soldering or ink-jetting copper or silver. The heat of 2 is dissipated by the LED package substrate 9 through the wiring substrate 8. Fig. 18 is an explanatory view showing a fifth example of the LED module device 1000 of the present invention, and (A) is a sectional view thereof, (B) The top view showing the state in which the three LED packages 1 are mounted on the wiring board 8 is shown. The LED package 1 (see Figs. 9 to 13) and the wiring board 8 having the opening 28 corresponding to the LED package 1 are prepared. The wiring board 8 can be, for example, a one-layer glass epoxy substrate having a wiring layer on the back surface, and a strip substrate of polyimide may be used as long as the wiring board 8 is made thin as much as possible. When an opening is provided in the wiring substrate 8, the thickness of the substrate becomes a wall portion, and light that is in contact therewith becomes light loss. Therefore, the wall portion is thinner and thinner. In order to reduce the light loss, the opening area of the wiring board 8 can be increased, and the connecting portion 20 of the LED package 1 can be formed into a small claw shape. A white resist can be applied to the surface of the wiring substrate 8 to obtain a reflection effect. The LED package 1 is disposed in the opening portion 28 of the wiring board 8, and the connection electrode 6 on the upper surface of the LED package 1 is soldered to the wiring 5 on the back surface of the wiring board 8. As shown in the figure, the connection electrode 6 is further inside than the end of the metal plate 12, and the solder 4 does not overflow the end of the metal plate 12. When the connecting electrode 6 is extended to the end of the metal plate 12, the risk of the solder 4 bridging on the thin insulating layer becomes high. The light-emitting surface of the LED chip 2 faces the upper side in the drawing, and is not shielded by the LED package substrate 9 and can emit light upward. The LED package 1 on which the wiring substrate 8 is mounted is fixed to the heat dissipation plate 1 (for example, copper or aluminum plate) by soldering. Alternatively, instead of the soldering, the high thermal conductivity of the bonding material 7 can be used for the subsequent step. It can also be fixed directly to the frame instead of the heat sink 1 〇. -32-201246618 Fig. 19 is an explanatory view showing a sixth example of the LED module device 1000 of the present invention, wherein (A) shows the upper view of the LED package 1 of the connected structure. (B) shows the LED package of the connection. 1 is a cross-sectional view taken along the line A-A' in a state of being mounted on the wiring board 8. In the LED package 1 to be connected, a plurality of (illustrated as four) LED packages 1 are connected by the connecting portion 32. The connecting portion 32 forms a partially cut-away portion 31 on both sides of the connecting portion 32 in order to avoid deformation during the reduction processing. By connecting the connecting portions 32, it is possible to electrically connect the LED package 1 having the connection structure, and to attach it to a heat dissipating member or a frame body having any outer surface shape such as a convex shape or a concave shape. Physically. The connection portion 32 is not present at the most end sides of the LED package 1 to be connected, and the connection electrode 6 is formed. The LED package 1 configured by the connection is mounted on the wiring substrate 8. The mounting on the wiring board 8 is as described above with reference to FIG. 14 , after the insulating material 7 is buried between the side surface of the LED package 1 and the wiring substrate 8, and then the insulating insulating material 7 is soldered or sprayed. Ink copper, silver, or the like, and one of the LED packages 1 connected to each other is connected to the wiring 5 on the upper surface of the wiring substrate 8. (Embodiment 1) Fig. 20 is a graph showing the relationship between the junction temperature of a LED and the film thickness. The analysis is performed in the following analysis strips. Package size: 4mmx4rnm, heat sink area 1.5mmxl.5mm, power consumption: 1W, ambient temperature Ta: 60 °C. The horizontal axis of the graph indicates the thickness of the polyimide layer, and the vertical axis indicates the bonding temperature. -33- 201246618 Generally, the LED bonding temperature is preferably 120 ° C or less. To achieve this in a 4 mm x 4 mm package, the film thickness of the polyimide 14 needs to be 40 μm or less. Further, it is preferable to set the film thickness to 20 μm or less and the LED bonding temperature to 100 C or less. As the insulating film on the metal substrate of the LED, it is necessary to satisfy the following characteristics in addition to the above thermal conductivity. (1) Insulation To have reliable insulation of a film, it is necessary to have a high insulation breakdown voltage. The standard dielectric breakdown voltage of polyimine 16 is about 150 kV/mm, and the high performance product is about 500 kV/n?m, and the usual engineering plastic is about 15 to 30 kV/mm. Therefore, as described above, the thickness of the polyimide can be as thin as 5 μm by using the high-performance polyimide. (2) Heat resistance It is required to have solder heat resistance (260 °C), and it is necessary to withstand the heat of LED. The thermal decomposition temperature of polyimine is above 500 ° C and has excellent performance. (3) Thermoplastic Polyimine 16 has thermoplasticity and thermosetting properties, but it is a thermoplastic polyimine in terms of deformation resistance of press forming. (4) Mechanical strength Mechanical strength that does not cause cracks due to stress. -34- 201246618 (5) Flexibility Polyimine 16 is used on flexible substrates and has excellent performance. (6) Long-term stability The above characteristics are stable over a long period of time without deterioration. (Example 2) (Production of metal plate 12/polyimine 16/copper laminate) When a thermoplastic polyimine resin solution was applied to the metal plate 12, it was directed to thermoplastic polyimine hydrogen. "LUPITITE UPA-N221C" (trade name: manufactured by Ube Industries, Ltd.) was applied by diluting a solution having a solid content of 5% in tetrahydrofuran, and heating the solvent to form a film. The polyaminic acid solution coated with the thermoplastic polyimine resin precursor on the metal plate 12 is subjected to mole polymerization using tetracarboxylic dianhydride and diamine as raw materials to form a polyfluorene. A solution of the amine acid, the solution is coated, slowly heated to carry out the desolvation treatment below the ring closure temperature of the ruthenium, and finally heated to 300 to 400 ° C for the ring closure reaction of the ruthenium iodide, and converted into a poly Yttrium imide 16. In Patent Document 4, as a tetracarboxylic dianhydride component, 3,3,4,4'-biphenyltetracarboxylic dianhydride is disclosed, and as a diamine component, m-benzenedimethyl and 1,3 - two are revealed. (4-Aminophenoxy)benzene. Further, in Patent Document 5, as a tetracarboxylic dianhydride component, 3,3',4,4'-benzophenonetetracarboxylic dianhydride is disclosed, and -35-201246618 is a diamine component and is disclosed in 1. 3-(3-Aminophenoxy)benzene copolymer (3-cis-butyl dioxetimide phenoxy). The coating method is not limited thereto, and can be carried out by a conventional bar code coating cloth, die-coater, comma-coater, gravure-coater cloth, spray coating or the like. Alternatively, a commercially available thermoplastic polyimine film (Mi d fi I ) is held on the metal plate 12 and the copper foil 23, and heated to obtain a laminate of the metal plate 12/polyimine 16/copper foil 23. < (Embodiment 3) FIG. 21(A) shows a heat dissipation characteristic (thermal resistance ratio), which shows a configuration (B) of the LED package 1 mounted on the heat dissipation plate 10, and the size of the LED chip 2 is set to m. , and the length of the gold plate connected to the heat sink 1 is set to L » in the graph of (A), the length of L is changed by the length of L (lm~5m) (and its heat dissipation area), and the vertical axis will be calculated. The obtained thermal impedance is expressed as 1) when the thermal impedance at L = lm. When calculated, the thermal conductivity of the frame: 300 W/mk, the heat of the polyamide 15 is 0.5 W/mk, and the thermal conductivity of the copper foil 23 is 400 W/mk. The degree of copper foil is 9 μm, the thickness of the metal plate 12 is 125 μm, and the polythene density is 5/10/30 μηι, respectively, and the thermal impedance is calculated according to the Fourier's law. The thermal impedance of each member becomes the thermal impedance θ = member thickness conductivity λ χ heat dissipation area). The total thermal resistance is calculated and totaled for each of the copper foil 23 amine 16 and the metal plate 12. Combined with 1,3 - _, roller coating, curtain coating KURABO press-bonded 3 table, (Β图. For example, I plate 1 2 with horizontal axis taken as a quadratic arbitrary 値 (set lead conductivity: 23 thick The thickness of each member is thicker than the thickness of each member t/ (Hot, 聚醯亚-36- 201246618 As shown in Figure 21 (A), the thermal impedance drop is extremely low when L = 2m is set. Back to storage and cause damage. As the length of L increases, the thermal impedance decreases, but when it grows to L = 5m or more, it becomes almost unchanged, and it can no longer improve the heat dissipation effect. The length increase of L is not conducive to The cost is therefore set in the range of the side length ratio L = 2m to 20m, preferably in the range of 3m to 10m. The embodiments are described in detail above, but may be substantially eliminated from the scope of the disclosure and advantageous effects of the present invention. According to the present invention, a metal plate having excellent workability and thermal conductivity is used as the LED package substrate, and insulation between the connection wiring of the LED chip mounted thereon is ensured. Insulation layer, for LED package substrate The shape is taken to ensure a large area at the bottom of the flat plate, and the heat radiating body is thermally conductive through the large area. Thus, the thermal conductivity of the heat sink by the LED chip can be improved. The LED package substrate of the present invention is The resin layer (polyimine) for insulation can be extremely thin by a metal-2 layer insulating layer (polyimine) + metal layer structure, and then the material is mixed with low thermal resistance. In this case, the thermal conductivity can be improved by about 10 times compared to the insulating layer, which can reduce the overall thermal resistance. In addition, the LED package substrate of the present invention is provided by an insulating layer sandwiched between the metal plate and the metal foil. Product

I 層體之製造方法採取對策，使絕緣用之樹脂層（聚醯亞胺 )變爲極薄，可減少熱阻抗。 -37- 201246618 依據本發明，使和LED封裝基板之配線基板間的電 連接部，由安裝LED封裝基板之散熱體分離，如此則， 可以簡單進行LED封裝基板與配線基板間之電連接之同 時，達成散熱與電連接之個別之成本效益之最佳化，整體 而S實現低成本、局效率之散熱。 另外，於金屬板之上形成開口部用於安裝LED晶片 ，該開口部之形成並非利用蝕刻，可以藉由衝孔加工（ punch )進行，可以簡化製程。 【圖式簡單說明】 圖1表示本發明具體化之LED模組裝置之第I例之 側面斷面圖。 圖2表示第1LED封裝基板之彎曲加工說明圖。 圖3表示完成之第1LED封裝基板之圖，（A)表示 將複數個LED封裝基板連結之狀態圖，（B)表示僅取出 其之1個LED封裝基板之圖，（C)表示沿（B)之A-A’ 線切斷之斷面圖，（D)表示沿（B)之B-B’線切斷之斷 面圖。 圖4表示和第1 LED封裝基板之圖3不同的另一例之 圖，（A)表示將複數個LED封裝基板連結之狀態圖，（ B)表示僅取出其之1個LED封裝基板之圖，（C)表示 沿（B )之 A-A’線切斷之斷面圖，（D)表示沿（B)之 » B-B’線切斷之斷面圖。 圖5表示第2LED封裝基板之彎曲加工說明圖。 -38- 201246618 圖6表示完成之第2LED封裝基板之圖，（A)表示 將複數個LED封裝基板連結之狀態圖’ （B)表示僅取出 其之1個LED封裝基板之圖。 圖7表示第2LED封裝基板之詳細圖，（A)表示表 示僅取出1個LED封裝基板之圖，（B)表示沿（A)之 A-A’線切斷之斷面圖，（C)表示沿（A)之B-B’線切斷 之斷面圖。 圖8表示第3LED封裝基板之彎曲加工說明圖。 圖9表示LED封裝組裝之第1例之圖。 圖10表示LED封裝組裝之第2例之圖。 圖1 1表示LED封裝組裝之第3例.之圖。 圖12(A)表示和圖11之LED封裝組裝不同之另一 例，（B)表示再另一例之斷面圖。 圖13表示LED封裝組裝之第4例之圖，（A)表示 完成之LED封裝之上面圖，（B)表示側面斷面圖。 圖14表示本發明具體化之LED模組裝置之第1例（ 參照圖1 )之組裝說明圖。 圖15表示本發明具體化之LED模組裝置之第2例之 側面斷面圖。 圖1 6表示本發明具體化之LED模組裝置之第3例之 側面斷面圖。 圖17表示本發明具體化之LED模組裝置之第4例之 組裝說明圖》 圖18表示本發明具體化之LED模組裝置之第5例之 -39- 201246618 說明圖，（A)表示其斷面圖，（B)表示於配線基板安裝 有3個LED封裝之狀態之上面圖。 圖19表示本發明具體化之LED模組裝置之第6例之 說明圖，（A)表示連結構成之LED封裝之上面圖，（B )表示將該連結構成之LED封裝安裝於配線基板之狀態 之沿A-A’線切斷之斷面圖》 圖20表示LED接合之溫度與膜厚關係之圖表。 圖21(A)表示散熱特性（熱阻抗比）之圖表，（B )表示安裝於散熱板上之LED封裝構成。 圖22表示習知發光裝置之例之圖（參照專利文獻1 ) 〇 圖23表示專利文獻2揭示之發光裝置之側面斷面圖 〇 圖24表示專利文獻3揭示之LED照明器具之圖，（ A)表示上面圖，（B)表示部分斷面圖。 圖2 5表示專利文獻6揭示之照明器具之斷面圖。 圖26表示專利文獻7揭示之發光裝置之斷面圖。 【主要元件符號說明】 1 000 : LED模組裝置 1 : LED封裝 2 : LED晶片 3 :透明樹脂 4 :焊錫 -40- 201246618 5 :配線 6 :連接電極 7 :接著材 8 :配線基板 9 : LED封裝基板 10 :散熱板 12 :金屬板 1 3 :分割線 1 4 :縫隙 15 :連接電極 1 6 :聚醯亞胺 17 :凹部 22 :平板狀底部 23 :銅箔 25 :銅箔除去部 2 6 :銀鍍敷層 2 8 :開口部 21、201 :連接部 18 :左壁部 19 :右壁部 20 :前壁部 21 :後壁部 1 0 1 :封裝基板區域 102 :結合部 -41 201246618 1 0 3 :空隙部 27 :接合導線 30:實施銀鍍敷層的金屬箔 3 1、32 :切除部 200 1 ： LED 晶片 2002 :透光性樹脂 2 0 0 3 :貫穿孔 2004 :銅箔圖案 2 0 0 5 :絕緣膜 2006 :銅支撐體 2007 :不鏽鋼基板 5 00 1 :丙烯基樹脂 5004 ：金屬核 -42-In the method of manufacturing the layered body, a resin layer (polyimine) for insulation is made extremely thin, and thermal resistance can be reduced. -37- 201246618 According to the present invention, the electrical connection portion between the wiring substrate and the LED package substrate is separated by the heat sink on which the LED package substrate is mounted. Thus, the electrical connection between the LED package substrate and the wiring substrate can be easily performed. To achieve the optimization of the individual cost-effectiveness of the heat-dissipation and electrical connection, the overall realization of the low-cost, local efficiency of heat dissipation. Further, an opening portion is formed on the metal plate for mounting the LED wafer, and the formation of the opening portion is not performed by etching, and can be performed by punching, which simplifies the process. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing a first example of an LED module device embodying the present invention. Fig. 2 is an explanatory view showing a bending process of the first LED package substrate. 3 is a view showing a completed first LED package substrate, (A) is a view showing a state in which a plurality of LED package substrates are connected, (B) is a view showing only one LED package substrate taken out, and (C) is a view showing (B) along (B) A'A' is a sectional view of the line cut, and (D) is a sectional view taken along line B-B' of (B). 4 is a view showing another example different from FIG. 3 of the first LED package substrate, wherein (A) shows a state in which a plurality of LED package substrates are connected, and (B) shows a view in which only one LED package substrate is taken out. (C) is a cross-sectional view taken along line A-A' of (B), and (D) is a cross-sectional view taken along line »B-B' of (B). Fig. 5 is a view showing a bending process of the second LED package substrate. -38-201246618 Fig. 6 is a view showing a completed second LED package substrate, and Fig. 6 is a view showing a state in which a plurality of LED package substrates are connected. (B) is a view showing only one LED package substrate taken out. 7 is a detailed view of a second LED package substrate, wherein (A) shows a view in which only one LED package substrate is taken out, and (B) shows a cross-sectional view taken along line A-A' of (A), (C) A cross-sectional view taken along the line B-B' of (A). Fig. 8 is an explanatory view showing a bending process of the third LED package substrate. Fig. 9 is a view showing a first example of LED package assembly. Fig. 10 is a view showing a second example of LED package assembly. Figure 11 shows a third example of LED package assembly. Fig. 12(A) shows another example of the assembly of the LED package of Fig. 11, and Fig. 12(B) shows a cross-sectional view of still another example. Fig. 13 is a view showing a fourth example of the assembly of the LED package, wherein (A) shows a top view of the completed LED package, and (B) shows a side sectional view. Fig. 14 is an assembly explanatory view showing a first example (see Fig. 1) of the LED module device embodying the present invention. Fig. 15 is a side sectional view showing a second example of the LED module device of the present invention. Fig. 16 is a side sectional view showing a third example of the LED module device of the present invention. Fig. 17 is a view showing an assembly of a fourth example of the LED module device of the present invention. Fig. 18 is a view showing a fifth example of the LED module device of the present invention - 39-201246618, (A) In the cross-sectional view, (B) is a top view showing a state in which three LED packages are mounted on the wiring board. Fig. 19 is an explanatory view showing a sixth example of the LED module device of the present invention, wherein (A) shows a top view of the LED package having the connected structure, and (B) shows a state in which the LED package of the connected structure is mounted on the wiring board. Sectional view taken along the line A-A'. Fig. 20 is a graph showing the relationship between the temperature at which the LED is bonded and the film thickness. Fig. 21(A) shows a graph of heat dissipation characteristics (thermal impedance ratio), and Fig. 21(B) shows an LED package structure mounted on a heat dissipation plate. 22 is a view showing an example of a conventional light-emitting device (see Patent Document 1). FIG. 23 is a side sectional view showing the light-emitting device disclosed in Patent Document 2. FIG. 24 is a view showing an LED lighting device disclosed in Patent Document 3, (A) ) indicates the above figure, and (B) shows a partial cross-sectional view. Fig. 25 shows a cross-sectional view of the lighting fixture disclosed in Patent Document 6. Fig. 26 is a sectional view showing a light-emitting device disclosed in Patent Document 7. [Main component symbol description] 1 000 : LED module device 1: LED package 2 : LED chip 3 : Transparent resin 4 : Solder -40 - 201246618 5 : Wiring 6 : Connecting electrode 7 : Substrate 8 : Wiring board 9 : LED Package substrate 10: heat dissipation plate 12: metal plate 1 3 : division line 1 4 : slit 15 : connection electrode 1 6 : polyimine 17 : recess 22 : flat bottom 23 : copper foil 25 : copper foil removal portion 2 6 Silver plating layer 2 8 : opening portion 21 , 201 : connecting portion 18 : left wall portion 19 : right wall portion 20 : front wall portion 21 : rear wall portion 1 0 1 : package substrate region 102 : joint portion - 41 201246618 1 0 3 : void portion 27 : bonding wire 30 : metal foil 3 1 , 32 on which silver plating layer is applied: cutout portion 200 1 : LED wafer 2002 : light transmissive resin 2 0 0 3 : through hole 2004 : copper foil pattern 2 0 0 5 : Insulating film 2006 : Copper support 2007 : Stainless steel substrate 5 00 1 : Propylene-based resin 5004 : Metal core - 42-

Claims (1)

201246618 七、申請專利範圍： 1. 一種LED封裝，係藉由金屬板之加工來構成LED 晶片用的LED封裝基板者，其特徵爲： 上述LED封裝基板具備：LED晶片之安裝用的平板 狀底部；及以形成由該底部端兩側分別站立之壁部的方式 被彎曲加工的金屬板；而且設爲在該金屬板與金屬箔之間 挾持由樹脂層及接著材層構成之2層絕緣層的積層構成； 以上述壁部上端之金屬箔作爲一對外部連接電極之其 中至少一方而構成； 於上述LED封裝基板之平板狀底部上面，將LED晶 片予以安裝之同時，使該LED晶片之一對電極之其中至 少一方連接於上述平板狀底部上面之金屬箔，而且將透明 樹脂塡充於上述壁部所挾持之凹部而構成。 2. 如申請專利範圍第1項之LED封裝，其中 於上述金屬板之上，具備作爲反射材機能而被施予金 屬表面處理的金屬箔，而且，作爲上述外部連接電極而構 成之金屬箔之端部，係較金屬板端被配置於更內側。 3. 如申請專利範圍第2項之LED封裝，其中 以使上述壁部上端之金屬箔作爲一對外部連接電極之 各個之機能的方式，將上述平板狀底部上面之金屬箔由兩 側予以絕緣分離，使上述LED晶片之一對電極分別連接 於上述被絕緣分離之金屬箔之各個。 4. 如申請專利範圍第2項之LED封裝，其中 於上述金屬板之平板狀底部上面，不介由上述絕緣層 -43- 201246618 ’使用導電性晶粒接合材針對LED晶片進行電氣及機械 接合’使用導線接合將該LED晶片之一對電極之其中一 方電極連接於上述金屬箔，另一方電極之連接，則使用上 述導電性晶粒接合材針對上述金屬板進行連接，使上述壁 部上端側之金屬箔作爲一對連接電極之其中一方連接電極 之機能’而且使用上述壁部上端側之金屬板來構成另一方 連接電極。 5. 如申請專利範圍第2項之LED封裝，其中 上述樹脂層之厚度較上述接著材層爲薄。 6. —種LED模組裝置，其特徵爲： 將申請專利範圍第1項之LED封裝安裝於配線基板 ，將上述一對外部連接電極連接於配線基板之配線之同時 ，使上述LED封裝之平板狀底部背面固定或接觸散熱體 而構成。 7. —種LED封裝之製造方法，該LED封裝爲，藉由 金屬板之加工來構成LED晶片用的LED封裝基板者，其 特徵爲： 於金屬板之上，使用接著材將由附加有樹脂層之金屬 箔所構成積層膜之樹脂層側予以貼合，在上述金屬板與上 述金屬箔之間挾持由上述樹脂層及接著材層構成之2層絕 緣層而形成積層構成； 具備：進行包含上述金屬板之上述積層構成之彎曲加 工，而成爲LED晶片之搭載用的平板狀底部；及位於該 底部兩側而在由底部端被折彎站立之方向’朝和LED晶 -44- 201246618 片之發光方向同一側延伸的壁部；將該壁部上部朝外方向 折彎而形成一對外部連接電極，構成LED封裝基板； 以上述壁部上端之金屬箔作爲上述一對外部連接電極 之其中至少一個以發揮機能； 於上述LED封裝基板之上將LED晶片予以安裝，使 LED晶片電極之至少一方連接於上述LED封裝基板之底 部金屬箔； 使用透明樹脂進行樹脂密封而構成。 8. 如申請專利範圍第7項之LED封裝之製造方法， 其中 以使上述壁部上端之金屬箔作爲一對外部連接電極之 各個之機能的方式，將上述平板狀底部上面之金屬箔由兩 側予以絕緣分離，使上述LED晶片之一對電極分別連接 於上述被絕緣分離之金屬箔之各個。 9. 如申請專利範圍第7項之LED封裝之製造方法， 其中 於上述金屬板之平板狀底部上面，不介由上述絕緣層 ’使用導電性晶粒接合材針對LED晶片進行電氣及機械 接合，使用導線接合將該LED晶片之一對電極之其中一 方電極連接於上述金屬箔，另一方電極之連接，則使用上 述導電性晶粒接合材針對上述金屬板進行連接，使上述壁 部上端側之金屬箔作爲一對連接電極之其中一方連接電極 之機能’而且使用上述壁部上端側之金屬板來構成另一方 連接電極。 -45- 201246618 10.如申請專利範圍第7項之LED封裝之製造方法 ，其中 於上述樹脂層之上，藉由鈾刻加工上述金屬箔而形成 將上述金屬箔予以絕緣分離的縫隙開口。 11 .如申請專利範圍第7項之LED封裝之製造方法 ，其.中 於上述金屬板之上，被實施作爲反射材機能的金屬表 面處理。 12. —種LED模組裝置之製造方法，其特徵爲： 將申請專利範圍第7項之LED封裝安裝於配線基板 ，將上述一對外部連接電極連接於配線基板上之配線之同 時，使上述LED封裝基板之平板狀底部背面固定或接觸 散熱體而構成。 13. —種LED封裝，係藉由金屬板之加工來構成 LED晶片用的LED封裝基板者，其特徵爲： 上述LED封裝基板具備：具有充分面積之平板狀底 部，於其上面形成一對連接部用以連接LED晶片安裝部 及LED晶片之一對電極；以形成由該底部端兩側分別站 立之壁部的方式被彎曲加工的金屬板；在該金屬板之上挾 持由樹脂層構成之絕緣層而將金屬箔予以接合的積層構成 構成上述絕緣層之樹脂層，係具有5μηι〜40μιη範圍 之膜厚的聚醯亞胺樹脂： 以上述壁部上端之金屬箔作爲一對外部連接電極之其 -46 - 201246618 中至少一方而構成； 於上述LED封裝基板之平板狀底部上面，將LED晶 片予以安裝之同時，使該LED晶片之一對電極之其中至 少一方連接於上述平板狀底部上面之金屬箔，而且將透明 樹脂塡充於上述壁部所挾持之凹部而構成。 14. 如申請專利範圍第13項之LED封裝，其中 作爲上述外部連接電極而構成之金屬箔之端部，相較 於金屬板端係被配置於更內側。 15. 如申請專利範圍第14項之LED封裝，其中 以使上述壁部上端之金屬箔作爲一對外部連接電極之 各個之機能的方式，將上述平板狀底部上面之金屬箔由兩 側予以絕緣分離，使上述LED晶片之一對電極分別連接 於上述被絕緣分離之金屬箔之各個。 16. 如申請專利範圍第14項之LED封裝，其中 於上述平板狀底部上面，不介由上述絕緣層，使用導 電性晶粒接合材針對LED晶片進行電氣及機械接合，使 用導線接合將該LED晶片之一對電極之其中一方電極連 接於上述金屬箔，另一方電極之連接，則使用上述導電性 晶粒接合材針對上述金屬板進行連接，使上述壁部上端側 之金屬箔作爲一對連接電極之其中一方連接電極之機能， 而且使用上述壁部上端側之金屬板來構成另一方連接電極 〇 17. 如申請專利範圍第14項之LED封裝’其中 上述聚醯亞胺樹脂，係在包含熱可塑性聚醯亞胺的聚 -47- 201246618 醯亞胺樹脂之中，混合球狀之間隔件粒子或直徑小於該間 隔件粒子的熱傳導性塡料、或該兩者。 18. 如申請專利範圍第14項之LED封裝，其中 上述LED封裝之平板狀底部之長邊被設爲LED晶片 短邊之2倍〜20倍之長度。 19. —種LED模組裝置，其特徵爲： 將申請專利範圍第13項之LED封裝安裝於配線基板 ，將上述一對外部連接電極連接於配線基板之配線之同時 ，使上述LED封裝之平板狀底部背面固定或接觸散熱體 而構成。 20. —種LED封裝之製造方法，該LED封裝爲，藉 由金屬板之加工來構成LED晶片用的LED封裝基板者， 其特徵爲= 於金屬板之上，挾持由樹脂層構成之絕緣層將金屬箔 予以接合而形成積層體，構成上述絕緣層之樹脂層，係具 有5 μιη〜40 μιη範圍之膜厚的聚醯亞胺樹脂； 具備：進行包含上述金屬板之上述積層體之彎曲加工 ，而在上面具有充分面積的平板狀底部，於該上面形成一 對連接部用於將LED晶片安裝部及LED晶片之一對電極 予以連接；及位於該底部兩側而在由底部端被折彎站立之 方向，朝和LED晶片之發光方向同一側延伸的壁部；將 該壁部上部朝外方向折彎而形成一對外部連接電極，構成 LED封裝基板； 以上述壁部上端之金屬箔作爲一對外部連接電極之其 -48- 201246618 中至少一個之機能： 於上述LED封裝基板之上將LED晶片予以安裝，使 LED晶片電極之至少一方連接於設於上述平板狀底部上面 的金屬箔； 使用透明樹脂進行樹脂密封而構成》 21. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 以使上述壁部上端之金屬箔作爲一對外部連接電極之 各個之機能的方式，將上述平板狀底部上面之金屬箔由兩 側予以絕緣分離，使上述LED晶片之一對電極分別連接 於上述被絕緣分離之金屬箔之各個。 22. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 於上述金屬板之平板狀底部上面，不介由上述絕緣層 ，使用導電性晶粒接合材針對LED晶片進行電氣及機械 接合，使用導線接合將該LED晶片之一對電極之其中一 方電極連接於上述金屬箔，另一方電極之連接，則使用上 述導電性晶粒接合材針對上述金屬板進行連接，使上述壁 部上端側之金屬箔作爲一對連接電極之其中一方連接電極 之機能’而且使用上述壁部上端側之金屬板來構成另一方 連接電極。 23. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 上述聚醯亞胺樹脂，係在包含熱可塑性聚醯亞胺的聚 -49 - 201246618 醯亞胺樹脂之中，混合球狀之間隔件粒子或直徑小於該間 隔件粒子的熱傳導性塡料、或該兩者。 24. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 上述積層體，係將上述聚醯亞胺樹脂溶液塗佈於上述 金屬箔或上述金屬板，乾燥之後，藉由對上述金屬板或上 述金屬箔實施熱壓接而形成。 25. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 上述積層體，係於上述金屬箔或上述金屬板之上，將 可以轉換爲熱可塑性聚醯亞胺系樹脂的至少一種聚醯亞胺 前驅體樹脂層予以塗佈之後，對該前驅體樹脂層實施熱處 理而形成熱可塑性聚醯亞胺系樹脂層，於上述熱可塑性聚 醯亞胺系樹脂層之上，實施上述金屬板或上述金屬箔之加 熱加壓下接合而形成。 26. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 上述積層體，係於上述金屬箔與上述金屬板之間，針 對挾持熱可塑性聚醯亞胺系薄膜者實施加熱加壓下接合而 形成。 27. 如申請專利範圍第20項之LED封裝之製造方法 ，其中 進行上述積層體之彎曲加工之前或之後，於上述金屬 箔之上，被實施作爲反射材機能的金屬表面處理。 -50- 201246618 28. —種LED模組裝置之製造方法，其特徵 將申請專利範圍第20項之LED封裝安裝於 ，將上述一對外部連接電極連接於配線基板上之 時，使上述LED封裝基板之平板狀底部背面固 散熱體而構成。 爲： 配線基板 配線之同 定或接觸 -51 -201246618 VII. Patent application scope: 1. An LED package which is formed by processing a metal plate to form an LED package substrate for an LED chip, wherein the LED package substrate has a flat bottom for mounting an LED chip. And a metal plate bent to form a wall portion standing on both sides of the bottom end; and a two-layer insulating layer composed of a resin layer and a back layer between the metal plate and the metal foil a laminated structure comprising: a metal foil at an upper end of the wall portion as at least one of a pair of external connection electrodes; and mounting the LED wafer on the flat bottom portion of the LED package substrate while making one of the LED chips At least one of the counter electrodes is connected to the metal foil on the upper surface of the flat bottom portion, and the transparent resin is filled in the concave portion held by the wall portion. 2. The LED package according to claim 1, wherein the metal plate is provided with a metal foil which is subjected to a metal surface treatment as a function of the reflective material, and the metal foil is formed as the external connection electrode. The end portion is disposed on the inner side of the metal plate end. 3. The LED package of claim 2, wherein the metal foil on the flat bottom portion is insulated from both sides in such a manner that the metal foil at the upper end of the wall portion functions as a pair of external connection electrodes Separating, one of the pair of LED chips is connected to each of the insulated and separated metal foils. 4. The LED package of claim 2, wherein the conductive substrate is electrically and mechanically bonded using the conductive die bonding material on the flat bottom of the metal plate without using the insulating layer-43-201246618 'Connecting one of the electrodes of one of the LED chips to the metal foil by wire bonding, and connecting the other electrode to the metal plate by using the conductive die bonding material, and the upper end side of the wall portion is connected The metal foil serves as a function of connecting the electrodes to one of the pair of connection electrodes, and the metal plate on the upper end side of the wall portion is used to constitute the other connection electrode. 5. The LED package of claim 2, wherein the thickness of the resin layer is thinner than the thickness of the adhesive layer. 6. An LED module device, characterized in that: the LED package of the first application of the patent scope is mounted on a wiring substrate, and the pair of external connection electrodes are connected to the wiring of the wiring substrate, and the LED package is provided The bottom of the bottom is fixed or contacted with a heat sink. 7. A method of manufacturing an LED package, wherein the LED package is formed by processing a metal plate to form an LED package substrate for an LED chip, wherein: a metal layer is attached to the metal plate by using a resin layer. The resin layer side of the laminated film formed of the metal foil is bonded to each other, and two insulating layers composed of the resin layer and the adhesive layer are sandwiched between the metal plate and the metal foil to form a laminated structure. The above-mentioned laminated structure of the metal plate is formed into a flat bottom portion for mounting the LED chip; and is located on both sides of the bottom portion and is bent in the direction of being bent from the bottom end to face the LED crystal-44-201246618 a wall portion extending on the same side of the light-emitting direction; the upper portion of the wall portion is bent outward to form a pair of external connection electrodes to form an LED package substrate; and the metal foil at the upper end of the wall portion is used as at least one of the pair of external connection electrodes One functioning function; mounting the LED chip on the LED package substrate to connect at least one of the LED chip electrodes to the LED package substrate The bottom portion of the metal foil; transparent resin constituting the sealing resin. 8. The method of manufacturing an LED package according to claim 7, wherein the metal foil on the flat bottom portion is made of two in a manner such that the metal foil at the upper end of the wall portion functions as a pair of external connection electrodes The side is insulated and separated, and one of the pair of LED chips is connected to each of the insulated and separated metal foils. 9. The method of manufacturing an LED package according to claim 7, wherein the conductive substrate is electrically and mechanically bonded to the LED wafer by using the conductive layer bonding material on the flat bottom of the metal plate. One of the pair of electrodes of the LED chip is connected to the metal foil by wire bonding, and the other electrode is connected to the metal plate by using the conductive die bonding material, and the upper end side of the wall portion is connected The metal foil serves as a function of connecting the electrodes to one of the pair of connection electrodes, and the metal plate on the upper end side of the wall portion is used to constitute the other connection electrode. 10. The method of manufacturing an LED package according to claim 7, wherein the metal foil is processed by uranium engraving to form a slit opening for insulating and separating the metal foil. 11. The method of manufacturing an LED package according to claim 7, wherein the metal sheet is treated as a metal surface treatment of a reflective material function. 12. A method of manufacturing an LED module device, comprising: attaching an LED package of claim 7 to a wiring substrate, and connecting the pair of external connection electrodes to wiring on the wiring substrate; The flat bottom of the LED package substrate is fixed on the back surface or is in contact with the heat sink. 13. An LED package which is formed by processing a metal plate to form an LED package substrate for an LED chip, wherein the LED package substrate has a flat bottom having a sufficient area, and a pair of connections are formed thereon. And a metal plate for connecting the LED chip mounting portion and the LED chip; forming a metal plate bent by a wall portion standing on both sides of the bottom end; and holding the resin layer on the metal plate The insulating layer is formed by laminating a metal foil to form a resin layer constituting the insulating layer, and is a polyimide film having a thickness of 5 μm to 40 μm: a metal foil having an upper end of the wall portion as a pair of external connection electrodes And constituting at least one of -46 - 201246618; mounting an LED chip on a flat bottom portion of the LED package substrate, and connecting at least one of the pair of electrodes of the LED chip to the flat bottom portion The metal foil is formed by laminating a transparent resin to a concave portion held by the wall portion. 14. The LED package of claim 13, wherein the end portion of the metal foil formed as the external connection electrode is disposed further inside than the metal plate end. 15. The LED package of claim 14, wherein the metal foil on the flat bottom portion is insulated from both sides in such a manner that the metal foil at the upper end of the wall portion functions as a pair of external connection electrodes Separating, one of the pair of LED chips is connected to each of the insulated and separated metal foils. 16. The LED package of claim 14, wherein the LED substrate is electrically and mechanically bonded using the conductive die bonding material on the flat bottom of the flat plate without using the insulating layer, and the LED is bonded by wire bonding. One of the electrodes of the wafer is connected to the metal foil, and the other electrode is connected to the metal plate by using the conductive die bonding material, and the metal foil on the upper end side of the wall is connected as a pair. One of the electrodes is connected to the function of the electrode, and the metal plate on the upper end side of the wall portion is used to form the other connection electrode 〇 17. The LED package of claim 14 wherein the above-mentioned polyimide resin is included Among the poly-47-201246618 bismuth imide resins of the thermoplastic polyimide, the spherical spacer particles or the thermally conductive material having a diameter smaller than the spacer particles or both are mixed. 18. The LED package of claim 14, wherein the long side of the flat bottom of the LED package is set to be twice to 20 times longer than the short side of the LED chip. 19. An LED module device, characterized in that: the LED package of claim 13 is mounted on a wiring substrate, and the pair of external connection electrodes are connected to wiring of the wiring substrate, and the LED package is provided The bottom of the bottom is fixed or contacted with a heat sink. 20. A method of manufacturing an LED package, wherein the LED package is formed by processing a metal plate to form an LED package substrate for an LED chip, and is characterized in that: an insulating layer made of a resin layer is held on the metal plate A metal foil is joined to form a laminate, and the resin layer constituting the insulating layer is a polyimide resin having a film thickness in the range of 5 μm to 40 μm; and a bending process for performing the laminate including the metal plate a flat bottom having a sufficient area thereon, a pair of connecting portions for connecting the LED chip mounting portion and one of the LED chips to the electrode; and being located at both sides of the bottom and being folded at the bottom end a wall portion extending toward the same side as the light-emitting direction of the LED chip; the upper portion of the wall portion is bent outward to form a pair of external connection electrodes to form an LED package substrate; and the metal foil at the upper end of the wall portion The function of at least one of -48-201246618 as a pair of external connection electrodes: mounting the LED chip on the LED package substrate to make the LED wafer electrode A method of manufacturing a LED package according to claim 20, wherein at least one of the metal foils is provided on the upper surface of the flat portion, and the metal foil is formed on the upper end of the wall portion. As a function of the function of each of the pair of external connection electrodes, the metal foil on the flat bottom portion is insulated from the both sides, and one of the pair of LED chips is connected to each of the insulated and separated metal foils. 22. The method of manufacturing an LED package according to claim 20, wherein the conductive wafer bonding material is electrically and mechanically bonded to the LED wafer without using the insulating layer on the flat bottom of the metal plate. One of the pair of electrodes of the LED chip is connected to the metal foil by wire bonding, and the other electrode is connected to the metal plate by using the conductive die bonding material, and the upper end side of the wall portion is connected The metal foil serves as a function of connecting the electrodes to one of the pair of connection electrodes, and the metal plate on the upper end side of the wall portion is used to constitute the other connection electrode. 23. The method of manufacturing an LED package according to claim 20, wherein the polyamidene resin is mixed in a poly-49 - 201246618 yttrium imide resin comprising a thermoplastic polyimine. The spacer particles or the thermally conductive material having a diameter less than the spacer particles, or both. 24. The method of manufacturing an LED package according to claim 20, wherein the layered body is coated with the polyimine resin solution on the metal foil or the metal plate, dried, and then passed to the metal plate. Or the above metal foil is formed by thermocompression bonding. 25. The method of manufacturing an LED package according to claim 20, wherein the laminated body is on the metal foil or the metal plate, and converts at least one polyfluorene which can be converted into a thermoplastic polyimine resin. After the imide precursor resin layer is applied, the precursor resin layer is heat-treated to form a thermoplastic polyimide-based resin layer, and the metal plate or the metal plate is applied to the thermoplastic polyimide-based resin layer. The metal foil is formed by bonding under heat and pressure. 26. The method of manufacturing an LED package according to claim 20, wherein the laminated body is between the metal foil and the metal plate, and is subjected to heat and pressure bonding for holding the thermoplastic polyimide film. And formed. 27. The method of manufacturing an LED package according to claim 20, wherein the metal foil is subjected to a metal surface treatment as a function of the reflective material before or after the bending of the laminate. -50-201246618 28. A method of manufacturing an LED module device, characterized in that the LED package of claim 20 is mounted on the LED package when the pair of external connection electrodes are connected to the wiring substrate The flat bottom surface of the substrate is fixed to the heat sink. To: Wiring substrate Wiring or contact -51 -
TW100137727A 2010-10-19 2011-10-18 Led module device, method for manufacturing same, led package used for led module device, and method for manufacturing same TW201246618A (en)

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