TW201246341A - Method for applying film, method for grinding back surface, method for forming semiconductor chip, and apparatus for applying film - Google Patents
Method for applying film, method for grinding back surface, method for forming semiconductor chip, and apparatus for applying film Download PDFInfo
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- TW201246341A TW201246341A TW100144687A TW100144687A TW201246341A TW 201246341 A TW201246341 A TW 201246341A TW 100144687 A TW100144687 A TW 100144687A TW 100144687 A TW100144687 A TW 100144687A TW 201246341 A TW201246341 A TW 201246341A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
201246341 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種將膜塗佈至一物件之表面的方法。本 發明亦係關於一種在將膜塗佈於一物件之前表面上的情況 下研磨該物件之背表面的方法。本發明亦係關於一種形成 半導體晶片之方法,該形成半導體晶片之方法包括研磨晶 圓之背表面的步驟。 【先前技術】 在製造半導體積體電路之技術領域中,已知一種製造複 數個半導體晶片之方法,在該方法中,在於一預定厚度之 晶圓的表面上形成電路之後,在將保護膜或玻璃板塗佈至 形成有電路圖案之表面(下文中被稱作電路側)的情況下, 藉由研磨與電路側相反之侧中的晶圓表面來均勻地減小晶 圓之厚度’且切割並劃分薄化之晶圓(大體上被稱為切塊) 以獲得複數個半導體晶片。 舉例而5 ,日本未審查專利公開案(Kokai)第2005-1502W號揭不一種半導體表面保護方法及一種半導體表面 保護薄片,其准許將半導體晶圓背部研磨至一超薄晶圓, 且准許方。卩研磨電路側上具有高突起(諸如,焊料凸塊)之 半導體B曰圓。> 日本未審查專利公開案第綱5_ 150235號中所揭示之半導體表面保護方法包含以下步驟: 經由表面保護層將聚合物膜材料層壓至半導體晶圓之該 電路侧’該表面保護層在室溫下為流體或藉由加熱而流 化且在…、射輻射能或藉由加熱後便硬化;及使該半導體 I60620.doc 201246341 保護薄片凝固。關於使用表面保護薄片之方法,存在以下 描述:可藉由在加熱之後或在加熱期間使表面保護薄片緊 密接觸半導體晶圓之電路側而層壓表面保護薄片。可使該 薄片在真空腔室中緊密接觸晶圓之電路侧。可藉由此等方 法來達成不包括氣泡之完美層壓。在藉由表面保護薄片保 護晶圓之電路側之情況下,可藉由研磨與電路側相反之晶 圓表面而使晶圓薄化。在藉由將完成之研磨表面結合至切 塊薄片而固定經由該背部研磨步驟所獲得的晶圓之後,藉 由經由剝落移除表面保護薄片而將所獲得的晶圓轉移至切 塊薄片上’’且將所獲得的晶圓發送至切塊步驟。 曰本未審查專利公開案(Kokai)第2005-159155號揭示一 種在製造半導體晶片之方法(包括半導體晶圓之切塊步驟) 中有效地防止切塊中之鏨平的方法。曰本未審查專利公開 案(Kokai)第200 5_159155號中所揭示的製造半導體晶片之 方法包含以下步驟:將光/熱交換層(包括光吸收劑及熱可 分解樹脂)塗佈於透光支撐件上;提供一半導體晶圓,該 半導體晶圓具有一具備電路圖案之電路側及一與電路侧相 反之非電路側;經由光固化型黏附劑將該半導體晶圓層壓 至該透光支律件,且藉由用來自該透光支撐件之側的光照 射而使光固化型黏附劑硬化,以形成一具有在外部之非電 路側的層壓物;研磨該半導體晶圓之非電路側直至半導體 晶圓達到一所要厚度為止,·自非電路侧將研磨之半導體晶 圓切塊並將其切割成複數個半導體晶片;及用來自該透光 支樓件之輻射能照射,以使該光/熱交換層分解,且將該201246341 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of coating a film onto the surface of an object. The present invention is also directed to a method of grinding the back surface of an article prior to application of the film to a surface prior to application. The invention is also directed to a method of forming a semiconductor wafer, the method of forming a semiconductor wafer comprising the step of grinding the back surface of the wafer. [Prior Art] In the field of manufacturing a semiconductor integrated circuit, a method of manufacturing a plurality of semiconductor wafers is known, in which a protective film or a protective film is formed after a circuit is formed on a surface of a wafer of a predetermined thickness or In the case where a glass plate is applied to a surface on which a circuit pattern is formed (hereinafter referred to as a circuit side), the thickness of the wafer is uniformly reduced by grinding the surface of the wafer in the side opposite to the circuit side and cutting Thinned wafers (generally referred to as dicing) are divided to obtain a plurality of semiconductor wafers. For example, Japanese Unexamined Patent Publication (Kokai) No. 2005-1502W discloses a semiconductor surface protection method and a semiconductor surface protection sheet which permits back grinding of a semiconductor wafer to an ultra-thin wafer. . The semiconductor B has a high protrusion (such as a solder bump) on the side of the polishing circuit. The semiconductor surface protection method disclosed in Japanese Unexamined Patent Publication No. Hei No. Hei-5-150235 comprises the steps of: laminating a polymer film material to the circuit side of a semiconductor wafer via a surface protective layer 'The surface protective layer is Fluid at room temperature or fluidized by heating and hardened after exposure to radiant energy or by heating; and solidification of the protective sheet of the semiconductor I60620.doc 201246341. Regarding the method of using the surface protective sheet, there is a description that the surface protective sheet can be laminated by bringing the surface protective sheet into close contact with the circuit side of the semiconductor wafer after heating or during heating. The sheet can be brought into close contact with the circuit side of the wafer in the vacuum chamber. This method can be used to achieve a perfect laminate that does not include bubbles. In the case where the circuit side of the wafer is protected by the surface protective sheet, the wafer can be thinned by polishing the surface of the wafer opposite to the circuit side. After the wafer obtained by the back grinding step is fixed by bonding the finished abrasive surface to the dicing sheet, the obtained wafer is transferred onto the diced sheet by removing the surface protective sheet by peeling off' 'And send the obtained wafer to the dicing step. A method for effectively preventing the flattening in a dicing block in a method of manufacturing a semiconductor wafer, including a dicing step of a semiconductor wafer, is disclosed in Japanese Laid-Open Patent Publication No. 2005-159155. The method of manufacturing a semiconductor wafer disclosed in Japanese Unexamined Patent Publication (Kokai) No. Hei No. Hei No. Hei No. Hei No. Hei No. No. 2005-159155, which comprises the step of coating a light/heat exchange layer (including a light absorber and a thermally decomposable resin) on a light-transmitting support. Providing a semiconductor wafer having a circuit side having a circuit pattern and a non-circuit side opposite to the circuit side; laminating the semiconductor wafer to the light transmitting branch via a photocurable adhesive And a photocurable adhesive hardened by irradiation with light from a side of the light-transmitting support to form a laminate having an external non-circuit side; a non-circuit that polishes the semiconductor wafer Side until the semiconductor wafer reaches a desired thickness, dicing the ground semiconductor wafer from the non-circuit side and cutting it into a plurality of semiconductor wafers; and illuminating with the radiant energy from the light transmissive branch member The light/heat exchange layer is decomposed and
160620.doc S 201246341 光/熱交換層分成一具有該黏附層之半導體晶片及一透光 支撐件。關於使半導體晶片與透光支撐件彼此分離之方 法,存在以下描述:將黏附帶52安置於具有複數個晶片之 層壓物1的晶片侧上。借助於一環形金屬框架(圖5(b))將黏 附帶52固定於平面中。接著,用來自支撐件側之雷射光54 照射層壓物1(圖5(c))。在用雷射光照射之後,將支撐件$ 向上拉以使支撐件5與晶片6分離(圖5(d))。最後,可藉由 剝落來移除黏附層3以獲得薄化之晶片圖。又,存 在以下描述:透光支撐件較佳具有足夠剛性以便防止半導 體晶圓在研磨期間翹曲。支撐件之抗彎剛性較佳不小於 2xlO_3(Pam3),且更佳為3xl0-2 (Pam3)。有用支撐件之實 例包括玻璃板、丙烯酸板等’且光固化型黏附劑較佳在塗 佈及層壓操作之溫度(例如,25。〇下具有小於1〇〇〇〇 cps2 黏度’以便將黏附層填充至發晶圓上之不均勻電路圖案中 以達成均勻厚度。在稍後將描述之各種方法中,較佳藉由 旋塗步驟來塗佈此液體黏附劑^關於黏附劑,uv固化型 及光固化型黏附劑係尤其較佳的。 曰本未審查專利公開案(Kokai)第2008-010464號揭示一 種製造***晶片之方法,在該方法中,在先切塊再研磨之 製程(其中在研磨背部之前執行切塊)中,即使形成具有較 大不均勻性之晶片或具有高縱橫比之晶片,亦可消除在於 背部上研磨情況下的晶片之跳開及對鄰接晶片之損壞(歸 因於接觸)。日本未審查專利公開案 號中所揭示的用於製造***晶片之方法包含以下步驟••用 160620.doc 201246341 液體黏附劑填充藉由該切割形成之各別晶片之間的間隙; 將待研磨之物品層壓於一硬質支撐件上以便曝露其背部; 使黏附劑硬化或凝固以形成一層壓物,其中具有複數個晶 片的待研磨之物品、黏附劑固體及硬質支撐件係順序地配 置;自待研磨之物品之背表面研磨層壓物以獲得層壓物上 之薄化的分離的個別晶片;將硬質支撐件自層壓物移除; 在移除硬質支撐件之情況下,將可撓性黏附薄片結合至層 壓物之黏附劑固體;及拾取並收集藉由黏附劑固體而固持 於可撓性黏附薄片上的個別晶片。存在以下描述:可將任 何類型之黏附劑(包括固化型黏附劑、基於溶劑之黏附 劑、熱熔型黏附劑或水分散型黏附劑)用作黏附劑,且需 要硬質支撐件具有足夠剛性以便防止&品之翹曲部在研磨 背表面期間被研磨且准許無應力研磨。有用支撐件包括 (例如)由樹脂材料、玻璃形成之薄片部件。 【發明内容】 在諸如一晶圓之一物件的情況下, 體晶片之一基底材料,且該物件包令 ’該物件用作用於半導160620.doc S 201246341 The light/heat exchange layer is divided into a semiconductor wafer having the adhesion layer and a light transmissive support. Regarding the method of separating the semiconductor wafer from the light-transmitting support members, there is a description that the adhesive attach 52 is disposed on the wafer side of the laminate 1 having a plurality of wafers. The adhesive 52 is fixed in the plane by means of an annular metal frame (Fig. 5(b)). Next, the laminate 1 is irradiated with the laser light 54 from the support side (Fig. 5(c)). After irradiation with the laser light, the support member $ is pulled up to separate the support member 5 from the wafer 6 (Fig. 5(d)). Finally, the adhesion layer 3 can be removed by spalling to obtain a thinned wafer pattern. Again, the following description: The light transmissive support is preferably sufficiently rigid to prevent warpage of the semiconductor wafer during grinding. The bending rigidity of the support member is preferably not less than 2xlO_3 (Pam3), and more preferably 3xl0-2 (Pam3). Examples of useful supports include glass plates, acrylic plates, etc. and the photocurable adhesives preferably have a temperature at the coating and lamination operation (eg, less than 1 〇〇〇〇 cps 2 viscosity at 25 〇 to adhere) The layer is filled into the uneven circuit pattern on the wafer to achieve a uniform thickness. In various methods to be described later, the liquid adhesive is preferably applied by a spin coating step, regarding the adhesive, uv curing type And a photocurable adhesive is particularly preferred. A method of manufacturing a split wafer is disclosed in the Kokai Patent Publication No. 2008-010464, in which a prior dicing and regrind process is performed (wherein In the case of performing dicing before grinding the back, even if a wafer having a large unevenness or a wafer having a high aspect ratio is formed, the jump of the wafer in the case of grinding on the back and the damage to the adjacent wafer can be eliminated. The method for manufacturing a split wafer disclosed in the Japanese Unexamined Patent Publication No. includes the following steps: • Filling with a liquid adhesive such as 160620.doc 201246341 Cutting the gap between the individual wafers; laminating the article to be ground on a rigid support to expose the back; hardening or solidifying the adhesive to form a laminate having a plurality of wafers to be ground The article, the adhesive solids, and the rigid support are sequentially disposed; the laminate is ground from the back surface of the article to be abraded to obtain a thinned separate individual wafer on the laminate; the rigid support is moved from the laminate In addition to the removal of the rigid support, the flexible adhesive sheet is bonded to the adhesive solids of the laminate; and the individual wafers held by the adhesive solids on the flexible adhesive sheet are picked up and collected. There is a description that any type of adhesive (including a curable adhesive, a solvent-based adhesive, a hot-melt adhesive, or a water-dispersible adhesive) can be used as an adhesive, and the rigid support is required to be sufficiently rigid so that The warpage preventing & product is ground during grinding of the back surface and permits stress free grinding. Useful supports include, for example, thin layers of resin material, glass Member. SUMMARY OF THE INVENTION In a case where one object such as a wafer, one of the wafer base material and the article package so 'as the article for semiconductor
面的步驟,亦需要可藉由使用一簡單 由研磨該背表面進行的該晶圓之厚度 包括研磨一晶圓之一背表 簡單技術來準確地執行藉 的減小及藉由切割進 160620.doc 3 201246341 行=成複數個晶片之劃分。另外,在將-膜塗佈至-物件 之-表面以用於進行該物件之研磨或其類似者的技術中,需要可藉由使用—簡單技術來準4地將該膜塗饰至該物 件0 在本發明之一態樣中,提供一種塗佈-膜之方法’該方 法包含以下步驟:提供以下各者:一物件,其具有一第一 表面及與該第-表面相反之—第二表面;—可撓性膜其 具有大於該物件之該第—表面的—前表面;—框架部件, 其經塑形及設^大小以便可沿該膜之__周邊置放且具有一 高於該膜之剛性的剛性;及-液體黏附劑;將該液體黏附 劑配置於該物件之該第一表面或該膜之該前表面上;將該 框架部件沿該膜之該周邊固定至該膜;將該物件及該膜配 置於-相對位置中,其中該第—表面與該前表面相對且沿 該膜之該周邊的該膜之一區域自該物件向外延伸,且使該 第一表面與該前表面兩者接觸該液體黏附劑;及使該液體 黏附劑凝固並將該膜穩固地附著至該物件之該第一表面。 方 在本發明之另一態樣中,提供一種 法包含以下步驟:提供以下各者: 塗佈一膜之方法,該具有一第一表面及與 該第表面相反之一第二表面的一物件、一可撓性膜及一 液體黏附劑;將該液體黏附劑置放於該物件之該第一表面 或該膜之前表面上;將該物件及該膜配置於一相對位置 中,其中該[表面與該前表面相對,且使該第—表面與 該前表面兩者接觸該液體黏附劑;在該第一表面與該前表 面兩者接觸該液體黏附劑的情況下 ’使該物件及該膜旋 160620.doc • 8 - 201246341 轉,以便將該液體黏附劑展佈於該第一表面與該前表面之 間的一間隙上;及使該液體黏附劑凝固並將該膜穩固地附 著至該物件之該第一表面。 在本發明之再一態樣中,提供一種研磨一物件之一背表 面的方法,該方法包含以下步驟·•經由根據上文所描述之 該等態樣中之一者的該塗佈膜之方法,將該膜穩固地附著 至該物件之該第一表面;及在將該膜穩固地附著至該第一 表面的情況下’研磨該物件之該第二表面。 在本發明之另一態樣中,提供一種研磨一背表面之方 法,該方法包含以下步驟:經由根據上文所描述之另一態 樣之該方法,將該臈穩固地附著至該物件之該第一表面; 及在固疋地支撐該物件之一狀態下,在將該膜穩固地附著 至該第一表面的情況下,研磨該第二表面。 在本發明之又一態樣中,提供一種形成一半導體晶片之 方法,該方法包含以下步驟:經由根據該上文所描述之態 樣的該研磨背表面之方法,研磨一物件之該第二表面,該 物件包含一晶圓,該晶圓具有作為該第一表面之一電路 側0 在本發明之再一態樣中,提供一種塗佈一膜之裝置,該 裝置包含:一框架支撐部分,其用於在一物件之該第一表 面與該膜之該前表面兩者接觸一液體黏附劑的情況下相 對於該物件來穩固地切該框架料;及—驅動部分,其 用於在該框架i樓部分相對於該物件而穩固土也支標該框架 部件的-狀態下,使該物件及該膜以—同轴配置旋轉。 β 160620.doc •9 201246341 在本發明之又-態樣中,提供一種塗佈一膜之裝置,該 裝f包含:-膜支擇部分,其用於在一物件之該第一表面 與-膜之該前表面兩者接觸一液體黏附劑的情況下,相對 於該物件來穩固地支樓該膜;及一驅動部分,其用於在該 膜支推部分相對於該物件而穩固地支撐該膜的一狀態下, 使該物件及該膜以一同軸配置旋轉。 關於根據本發明之一態樣的該塗佈一膜之方法,由於具 有高於該膜之剛性之一剛性的一框架部件沿該膜之一周邊 而固定至該膜,故可保持在該框架部件内部的該膜之中心 區域無扭曲,以使得該物件之該第一表面與該膜之該前表 面可大體上平行於彼此而配置,且可接觸一液體黏附劑。 由於將一液體黏附劑用作用於結合該物件與該膜的構件, 故可藉由該液體黏附劑來填充該物件之該第一表面的各種 凹凸不平度及不均勻性,且確保了在該液體黏附劑凝固之 後的該膜之平坦度,且在該物件與該膜之間形成不包括氣 泡之結合層(在凝固之後的該液體黏附劑)^此結合層可穩 定地維持高黏附強度歷時一較長週期。因此,關於該塗佈 一膜之上述方法,可藉由使用一簡單技術來準確地將該膜 塗佈至一物件。 關於一種根據本發明之另一態樣的塗佈一膜之方法,由 於在一物件之該第一表面與一膜之該前表面兩者接觸一液 體黏附劑的情況下,使該物件及該膜旋轉,故可將該液體 黏附劑展佈於該第一表面及該前表面上,且可藉由穩固地 支樓該膜’來防止在該物件與該膜之該旋轉期間的該膜相 160620.doc 201246341 對於該物件之可能的上升及兩個中心軸線之位置偏差。因 此’可確保在該液體黏附劑冑固之後的該膜之平坦度及該 物件之該第—表面與該膜之該前表面的平行度。由於將-液體黏附劑用作用於結合該物件與該膜的構件,故可在該 物件與該膜之間形成不包括氣泡之該結合層(在凝固之後 的該液體黏附劑)。此結合層可敎地維持高黏附強度歷 時一較長週期。因此’關於該塗佈一膜之上述方法,可藉 由使用一簡單技術來準確地將該膜塗佈至一物件。 關於根據本發明之再一態樣的該研磨一物件之一背表面 之方法,由於該物件之—第—表面藉由—膜而受到保護, 故與使用—玻璃板用於保護之—方法相比,可減少成本。 由於具有高於該膜之剛性之一剛性的一框架部件沿該膜之 該周邊而固丨’故可保持位於該框架部件内部的該膜之中 心區域無扭曲’且該物件之該第—表面與該膜之該前表面 可大體上平行於彼此而配置,且可在此狀態下接觸—液體 黏附劑。另外’可藉由處置該框架部件來快速地執行該等 研磨該物件之該第二表面的程序。另彳,由於將_液體黏 附劑用作用於結合該物件與該膜的構件,故確保了在該液 體黏附劑凝固之後的該膜之平坦度,且可在該物件與該膜 之間形成不包括氣泡之該結合層。藉由確保該膜之平坦度 及該物件之該第-表面與該膜之該前表面之間的平行度, 可均句地研磨該物件之該第二表面以形成一平坦的完成表 面,且可將該物件之厚度均句地減小至大約幾十微米。不 包括氣泡之結合層可穩定地維持高黏附強度歷時一較長週 160620.doc -11 . 201246341 期,且可有效地防止處理介質在研磨操作期間進入該結合 層中。因此,關於該研磨一背表面之上述方法,可藉由使 用一簡單技術來準確地減小一物件之厚度。 關於根據本發明之又一態樣的該形成一半導體晶片之方 法,可在具有一機械加工表面之該晶圓(物件)上準確地執 仃切割步驟’該機械加工表面係根據如上文所描述之該研 磨一背表面之方法形成,該切割步驟係在與執行該研磨該 背表面相同的位置上且在藉由該晶圓(物件)與該膜之間的 :結合層提供之該高黏附強度下進行。因&,關於該形成 :半導體晶片之方法’可藉由使用—簡單技術來準確地執 行藉由研磨-背表面進行的該晶圓之厚度的減小以及藉由 切割進行的成複數個晶片之劃分。 【實施方式】 將參看展示本發明之實施例的圖式來詳細地描述本發 明。貫穿該等圖式,對應組件藉由共同參考數字及符號表 示。 圖式中所展示的塗佈膜之方法具有將可撓性膜塗佈至一 相對堅固物件之表面的目的。可將該方法實施為一種研磨 背表面之方法的一個步驟,其中,在一物件(亦即,待研 磨之物件)(諸如,作為半導體晶片之基底材料的晶圓)中, 該物件具有用於主要功能之表面(亦即,第一表面)及與第 一表面相反之背表面(亦即,第二表面),研磨第二表面, 以藉此均勻地減小物件之厚度。可在形成半導體晶片之方 法中,將所展示的研磨背表面之方法實施為研磨背表面以 160620.doc -12- 201246341 均勻地減小晶圓之厚度的製程。該方法包括在一狀態下研 磨與電路侧相反之背表面,在該狀態下,在於一指定厚度 之晶圓的表面上形成電路圖案之後,藉由塗佈一保護膜來 保護電路側。然而’根據本發明之一實施例的塗佈膜之方 法及根據另一實施例的研磨背表面之方法的使用不限於如 上文所描述之此等應用。 圖1及圖3(a)展示塗佈膜之例示性方法(或研磨背表面之 方法),首先,提供以下各者:一物件1〇,其具有第一表 面10a及第二表面l〇b ; —可撓性膜12,其具有大於物件1〇 之第一表面10a的一前表面12a; —框架部件14,其具有可 沿膜12之周邊12c置放的形狀及大小,且具有高於膜I:之 剛性的剛性;及一液體黏附劑丨6。 物件10包含:第一表面l〇a及第二表面1〇b,其大體上平 行於彼此而延伸;及一外圓周1〇c,其在第一表面1〇a與第 二表面10b之間延伸。物件1〇可為一平板元件,預期可藉 由研磨整個第二表面10b而使該平板元件自初始厚度薄化 至一所要之均勻厚度。或者,物件1〇可為一平板元件,對 於該平板元件不能預期第二表面丨〇b之研磨及所得薄化。 物件10可為切、神化鎵、石英、藍寶石、玻璃或其類似 者形成的晶圓或基板β在物件10具有圓盤狀形狀之情況 下,物件10之直徑可為(例如)5〇mm至50〇mme 當在研磨背表面以用於形成半導體晶片之製程中實施所 展不之塗佈膜之方法時,物件1〇為作為半導體晶片之基底 材料的曰曰圓。通常,第一表面1〇a為形成有所要電路圖案 160620.docThe step of the surface is also required to accurately perform the reduction of the borrowing and the cutting into the 160620 by using a simple method of polishing the thickness of the wafer by grinding the back surface, including polishing one wafer. Doc 3 201246341 Line = division into a number of wafers. In addition, in the technique of applying a film to the surface of the article for polishing the article or the like, it is desirable to apply the film to the article by using a simple technique. In one aspect of the invention, a method of coating a film is provided, the method comprising the steps of: providing an object having a first surface and opposite the first surface - a second a surface; the flexible film having a front surface that is larger than the first surface of the object; the frame member being shaped and dimensioned so as to be positionable along the periphery of the film and having a higher a rigid rigidity of the film; and a liquid adhesive; the liquid adhesive is disposed on the first surface of the article or the front surface of the film; the frame member is fixed to the film along the periphery of the film Positioning the article and the film in a relative position, wherein the first surface is opposite the front surface and a region of the film along the periphery of the film extends outwardly from the article and the first surface is caused Contacting the liquid adhesive with both the front surface; and causing the liquid The body adhesive solidifies and the film is firmly attached to the first surface of the article. In another aspect of the invention, a method is provided comprising the steps of: providing a method of coating a film, the object having a first surface and a second surface opposite the first surface a flexible film and a liquid adhesive; the liquid adhesive is placed on the first surface of the object or the front surface of the film; the object and the film are disposed in a relative position, wherein The surface is opposite to the front surface, and the first surface and the front surface are in contact with the liquid adhesive; in the case where the first surface and the front surface are in contact with the liquid adhesive, the object and the object are Film spinning 160620.doc • 8 - 201246341 rotation to spread the liquid adhesive on a gap between the first surface and the front surface; and solidifying the liquid adhesive and firmly attaching the film to The first surface of the article. In still another aspect of the present invention, there is provided a method of grinding a back surface of an article, the method comprising the steps of: • passing the coating film according to one of the aspects described above Method, the film is firmly attached to the first surface of the article; and the second surface of the article is 'polished' with the film firmly attached to the first surface. In another aspect of the invention, a method of grinding a back surface is provided, the method comprising the steps of: firmly attaching the crucible to the article via the method according to another aspect described above The first surface; and in a state in which one of the articles is fixedly supported, the second surface is ground while the film is firmly attached to the first surface. In still another aspect of the present invention, a method of forming a semiconductor wafer is provided, the method comprising the steps of: grinding the second object of an object via the method of polishing the back surface according to the aspect described above a surface, the article comprising a wafer having a circuit side as the first surface. In a further aspect of the invention, a device for coating a film is provided, the device comprising: a frame support portion And for steadily cutting the frame material relative to the object in contact with both the first surface of the article and the front surface of the film; and a driving portion for The frame i-floor portion is rotated relative to the object and the solid soil is also supported in the state of the frame member, so that the object and the film are rotated in a coaxial configuration. β 160620.doc • 9 201246341 In a further aspect of the invention, there is provided a device for coating a film, the package comprising: a film-retaining portion for use on the first surface of an object Where the front surface of the film is in contact with a liquid adhesive, the film is stably supported against the object; and a driving portion for stably supporting the film supporting portion relative to the object In one state of the film, the article and the film are rotated in a coaxial configuration. With respect to the method of coating a film according to an aspect of the present invention, since a frame member having rigidity higher than a rigidity of the film is fixed to the film along a periphery of the film, it can be held in the frame The central region of the film inside the component is undistorted such that the first surface of the article and the front surface of the film can be disposed substantially parallel to each other and can contact a liquid adhesive. Since a liquid adhesive is used as a member for bonding the article and the film, the unevenness and unevenness of the first surface of the article can be filled by the liquid adhesive, and the The flatness of the film after the liquid adhesive solidifies, and a bonding layer (not including the liquid adhesive after solidification) is formed between the object and the film. The bonding layer can stably maintain high adhesion strength for a long time. A longer period. Therefore, with regard to the above method of coating a film, the film can be accurately applied to an object by using a simple technique. A method of coating a film according to another aspect of the present invention, wherein the object and the object are contacted by the first surface of the object and the front surface of a film contacting a liquid adhesive The film is rotated so that the liquid adhesive can be spread over the first surface and the front surface, and the film phase 160620 during the rotation of the article and the film can be prevented by firmly supporting the film ' .doc 201246341 Possible rise of the object and positional deviation of the two central axes. Therefore, the flatness of the film after the liquid adhesive is entangled and the parallelism of the first surface of the article with the front surface of the film can be ensured. Since the liquid-adhesive agent is used as a member for bonding the article and the film, the bonding layer (the liquid adhesive after solidification) which does not include bubbles can be formed between the article and the film. This bonding layer maintains high adhesion strength for a long period of time. Thus, with respect to the above method of coating a film, the film can be accurately applied to an article by using a simple technique. The method for polishing a back surface of an object according to still another aspect of the present invention, since the first surface of the object is protected by a film, and the method of using the glass plate for protection Compared, it can reduce costs. Since a frame member having a rigidity higher than the rigidity of the film is fixed along the periphery of the film, the central portion of the film located inside the frame member can be kept free of distortion and the first surface of the object The front surface of the film may be disposed substantially parallel to each other, and may contact the liquid adhesive in this state. Further, the process of grinding the second surface of the article can be performed quickly by disposing the frame member. In addition, since the liquid adhesive is used as a member for bonding the article and the film, the flatness of the film after the liquid adhesive is solidified is ensured, and a film can be formed between the object and the film. This bonding layer including bubbles is included. By ensuring the flatness of the film and the parallelism between the first surface of the article and the front surface of the film, the second surface of the article can be uniformly ground to form a flat finished surface, and The thickness of the article can be uniformly reduced to about a few tens of microns. The bonding layer not including the bubbles can stably maintain the high adhesion strength for a long period of time, and can effectively prevent the treatment medium from entering the bonding layer during the grinding operation. Therefore, with respect to the above method of grinding a back surface, the thickness of an object can be accurately reduced by using a simple technique. With respect to the method of forming a semiconductor wafer according to still another aspect of the present invention, the cutting step can be accurately performed on the wafer (object) having a machined surface. The machined surface is as described above. Forming the method of grinding a back surface, the cutting step being at the same position as performing the grinding of the back surface and the high adhesion provided by the bonding layer between the wafer (object) and the film Performed under intensity. Because of &, the method of forming: a semiconductor wafer can be performed by using a simple technique to accurately perform the reduction of the thickness of the wafer by the grinding-back surface and the plurality of wafers by cutting Division. [Embodiment] The present invention will be described in detail with reference to the drawings showing embodiments of the invention. Throughout the figures, corresponding components are represented by common reference numerals and symbols. The method of coating a film as shown in the drawings has the purpose of applying a flexible film to the surface of a relatively solid object. The method can be implemented as a step of a method of grinding a back surface, wherein in an object (ie, an object to be ground), such as a wafer as a base material of a semiconductor wafer, the object has The surface of the primary function (i.e., the first surface) and the back surface opposite the first surface (i.e., the second surface) grind the second surface to thereby uniformly reduce the thickness of the article. The method of polishing the back surface can be implemented as a process for polishing the back surface to uniformly reduce the thickness of the wafer by 160620.doc -12 - 201246341 in a method of forming a semiconductor wafer. The method includes grinding a back surface opposite to the circuit side in a state in which the circuit side is protected by coating a protective film after forming a circuit pattern on the surface of the wafer of a specified thickness. However, the method of coating a film according to an embodiment of the present invention and the method of grinding the back surface according to another embodiment are not limited to such applications as described above. 1 and 3(a) show an exemplary method of coating a film (or a method of polishing a back surface). First, an object is provided: an object 1 having a first surface 10a and a second surface 10b a flexible film 12 having a front surface 12a that is larger than the first surface 10a of the object 1〇; a frame member 14 having a shape and size that can be placed along the periphery 12c of the film 12 and having a higher Membrane I: rigid rigidity; and a liquid adhesive 丨6. The object 10 includes: a first surface 10a and a second surface 1b extending substantially parallel to each other; and an outer circumference 1cc between the first surface 1a and the second surface 10b extend. The article 1 can be a flat member, and it is contemplated that the flat member can be thinned from the initial thickness to a desired uniform thickness by grinding the entire second surface 10b. Alternatively, the object 1 may be a flat member for which the polishing of the second surface 丨〇b and the resulting thinning are not expected. The object 10 may be a wafer or a substrate formed by cutting, deuterated gallium, quartz, sapphire, glass or the like. In the case where the object 10 has a disk-like shape, the diameter of the object 10 may be, for example, 5 〇 mm to 50 〇mme When the method of applying the uncoated film in the process of polishing the back surface in the process of forming a semiconductor wafer is used, the object 1 is a rounded material which is a base material of the semiconductor wafer. Usually, the first surface 1〇a is formed into a desired circuit pattern 160620.doc
-13- S 201246341 之電路側。在此狀況下,第一表面10a可歸因於印刷線路 等而具有各種凸面部分11(圖4)。當實施如日本未審查專利 公開案(Kokai)第2008-010464號中所描述之「先切塊再研 磨」時,第一表面10a可具有在預定位置處切割至厚度方 向中的線性溝槽(未圖示晶圓之厚度為(例如)約〇5瓜瓜 至1 mm,且與直徑一起加以標準化。在研磨背表面之後的 半導體晶片之厚度為(例如)5〇 4„1至1〇〇 μπι,但最近需要 半導體晶片之進-步薄化。所展示之物件1〇具有圓盤狀形 狀(具有中心軸線10d(圖3(a)))(如大體上針對晶圓所見), 但可具有矩形板之形狀(如(例如)作為顯示器件之基板所 見)。在任何狀況下,物件10之材料、形狀、大小等並不 受特定限制》 膜12為可撓性隔膜元件,其具有前表面12&及與前表面 相反之背表面12b及周邊12c,且由樹脂或其類似者以大體 :均句厚度形成。膜12可具有以下功能:藉由用液體黏附 劑16將膜12穩固地附著至物件1〇 筮 乐—表面l〇a來保護第 -表面W。當將輕射固化型黏附劑(稍後將描述)用作液體 黏附㈣時’膜U理想地具有足夠賴射透明度且可為由 以下各者形成之聚合物膜:例如,聚輯(諸如,聚對苯二 甲酸乙:师旨)、聚婦烴樹脂(諸如,聚丙缔、聚氯乙: ^点聚偏二氯乙稀樹腊、聚酿胺樹脂或其類似者當 片之方法中在研磨背表面之步驟,實施所 能夠 法時’膜12理想地具有以下材料性質: 能夠在研磨旁表面之步驟或切塊之步驟期間,保護作為物 160620.doc -14· 201246341 件1 〇之第一表面的晶圓之電路側’以便使電路側不受到污 染或損壞。在此狀況下’膜12之厚度為(例如)5 至200 μπι。 可以預切薄片形式來供應膜12或可自滚筒來供應膜12以 剛好在使用之前進行切割。可預先切割及移除膜丨2之過多 部分以便使膜12具有類似於物件1〇之形狀,或可在塗佈至 物件10之後切割及移除過多部分以便使膜12具有類似於物 件之形狀。所展示之膜12具有類似於物件10之圓盤形狀的 圓盤之形狀(具有中心軸線12d(圖3(a))),但除了以下情況 之外’膜12之材料、形狀、大小等並不受特定限制:膜12 具有大於物件10之第一表面10a的一前表面12a。 框架部件14為一環形元件’其具有第一表面i4a及與第 一表面相反之第二表面14b、在第一表面與第二表面 14b之間延伸的内圓周i4c及與内圓周i4c相反之外圓周 14d ’且由(例如)金屬、樹脂或其類似者形成,以便具有大 體上均勻厚度。框架部件14具有一剛性,該剛性足以在將 第一表面14a或第二表面14b沿膜12之周邊12c固定至前表 面12a或背表面12b時’維持位於内圓周14C内部的膜12之 中心區域處於延伸狀態。框架部件14之剛性可基於材料、 尺寸、形狀等而判定,且可經選擇以防止框架部件i 4顯著 地彎曲或變形(甚至當將任何張力施加至膜12時亦如此)。 舉例而言,在環狀框架部件14由不鏽鋼製成的情況下,以 下隋形為適當的:可用於(例如)具有3〇 mm之直徑之聚石夕 氧晶圓的框架部件14具有大約1 mm至2 mm之厚度、大約-13- S Circuit side of 201246341. In this case, the first surface 10a can have various convex portions 11 (Fig. 4) due to a printed wiring or the like. The first surface 10a may have a linear groove cut into a thickness direction at a predetermined position when performing "first dicing and regrind" as described in Japanese Unexamined Patent Publication (Kokai) No. 2008-010464 ( The thickness of the wafer not shown is, for example, about 5 cucurbits to 1 mm, and is normalized along with the diameter. The thickness of the semiconductor wafer after grinding the back surface is, for example, 5 〇 4 „1 to 1 〇〇. Μπι, but recently the need for semiconductor wafer advancement thinning. The object shown has a disc shape (having a central axis 10d (Fig. 3(a)))) (as generally seen for wafers), but The shape of the rectangular plate (as seen, for example, as a substrate for a display device). In any case, the material, shape, size, and the like of the article 10 are not particularly limited. The film 12 is a flexible diaphragm member having a front The surface 12& and the back surface 12b and the periphery 12c opposite to the front surface are formed of a resin or the like in a substantially uniform thickness. The film 12 may have the function of: firmly securing the film 12 with the liquid adhesive 16 Attached to object 1〇筮Le-surface l〇a to protect the first surface W. When a light-curing adhesive (described later) is used as the liquid adhesion (four), the film U desirably has sufficient transparency and can be used by The formed polymer film: for example, a polygraph (such as polyethylene terephthalate: a teacher), a polyglycol resin (such as polypropylene, polychlorinated ethylene: ^ spotted polyvinylidene chloride wax, poly The step of grinding the back surface in the method of encapsulating the amine resin or the like, in the step of performing the process, the film 12 desirably has the following material properties: it can be protected during the step of grinding the side surface or during the step of dicing The circuit side of the wafer of the first surface of the first surface is such that the circuit side is not contaminated or damaged. In this case, the thickness of the film 12 is, for example, 5 to 200 μm. The film 12 may be pre-cut in the form of a sheet or may be supplied from the drum to be cut just prior to use. The excess portion of the film 2 may be pre-cut and removed so that the film 12 has a shape similar to that of the object. Or can be cut after being applied to the article 10 The excess portion is removed so that the film 12 has a shape similar to that of the article. The film 12 shown has a shape similar to the disk shape of the object 10 (having a central axis 12d (Fig. 3(a))), except The material, shape, size, and the like of the film 12 are not particularly limited as follows: the film 12 has a front surface 12a larger than the first surface 10a of the article 10. The frame member 14 is an annular member having a first surface I4a and a second surface 14b opposite to the first surface, an inner circumference i4c extending between the first surface and the second surface 14b, and an outer circumference 14d' opposite to the inner circumference i4c and composed of, for example, metal, resin or The like is formed so as to have a substantially uniform thickness. The frame member 14 has a rigidity sufficient to maintain the central portion of the film 12 located inside the inner circumference 14C when the first surface 14a or the second surface 14b is fixed to the front surface 12a or the back surface 12b along the periphery 12c of the film 12. In an extended state. The rigidity of the frame member 14 can be determined based on material, size, shape, etc., and can be selected to prevent the frame member i 4 from significantly bending or deforming (even when any tension is applied to the film 12). For example, in the case where the annular frame member 14 is made of stainless steel, the following shape is suitable: the frame member 14 that can be used, for example, for a polycrystalline silicon wafer having a diameter of 3 mm has about 1 Thickness from mm to 2 mm, approx.
S 160620.doc 15 201246341 350 mm之内徑及大約400 mm之外徑。所展示之框架部件 14具有類似於物件10之圓盤形狀的環狀形狀(具有中心轴 線14e(圖3(a))),但除了以下情況之外,框架部件14之材 料、形狀或大小並不受特定限制:框架部件丨4具有准許其 沿膜12之周邊12c而置放的形狀及大小,且框架部件μ且 有高於膜12之剛性的剛性。框架部件14可由與膜12相同之 材料形成。 液體黏附劑16展現高黏附強度,以便能夠將膜丨2之前表 面12a穩固地附著至物件10之第一表面i〇a,且可為(例如) 固化型黏附劑、基於溶劑之黏附劑、包括熱熔型黏附劑之 熱塑性樹脂或水分散型黏附劑或其類似者《此處,固化型 黏附劑為藉由應用熱或藉由用能量轄射(諸如,uv轄射)照 射而硬化的液體黏附劑》基於溶劑之黏附劑為藉由使溶劑 蒸發而凝固的液體黏附劑。熱熔型黏附劑為在加熱後便炼 融且在冷卻後便凝固的黏附劑。水分散型黏附劑為含有分 散於水中之黏附劑組份且藉由使水蒸發而凝固的黏附劑。 固化型黏附劑包括:基於環氧樹脂或胺基甲酸醋之單組份 熱可固化黏附劑;基於環氧樹脂、胺基甲酸酯或丙稀酸系 樹脂之雙組份反應型黏附劑;基於丙烯酸系樹脂或環氧樹 脂之UV可固化黏附劑;及電子束可固化黏附劑。基於溶 劑之黏附劑包括使橡膠、彈性體等溶解於溶劑中的基於橡 膠之黏附劑。術語「經凝固」及「凝固」指代硬化。 可在研磨背表面以用於形成半導體晶片之步驟中實施塗 佈膜之方法。在此狀況下’液體黏附劑16較佳具有以下材 160620.doc • 16 · 201246341 料性質:准許在液體黏附劑16凝固之前將液體黏附劑16均 勻地且平滑地填充至凸面部分丨丨之間的間隙中或用於「先 切塊再研磨製程」之線性溝槽中,且在物件(晶圓)1〇與膜 12之間形成具有最少氣泡至不包括氣泡之結合層18(圖 3(b))。詳言之,為了達成結合層18之均勻厚度,在一實施 例中,在凝固之前,液體黏附劑16在工作環境(例如, 25C)下具有小於1〇 pa.s(i〇〇〇〇 cp)之黏度。此處,黏度為 用布絡克菲爾德型旋轉黏度計量測之值(且根據轉子形狀 及轉數將該值轉換為(黏度)=(指示值)x(轉換因子))。舉例 而言,在25。(:環境下用具有轉子形狀第2號及在12卬爪下 的布絡克菲爾德型黏度計(BM)(例如,可自Ky〇wa Kagaku K.K.(東京)得到之「rvdV-E」)來量測黏度。 液體黏附劑16較佳在操作環境下(例如,在25C>c)在移除 溶劑之後(在基於溶劑之黏附劑的狀況下)、在固化之後(在 可固化型黏附劑的狀況下)、在凝固之後(在熱熔型黏附劑 的狀況下)具有不小於100 MPa之儲存彈性模數,且在研磨 背表面之步驟期間在最高可達到之溫度下(例如,在5〇它) 具有不小於10 MPa之儲存彈性模數。在液體黏附劑^之此 儲存彈性模數的情況下,可防止在研磨背表面之步驟期間 歸因於應力而產生的液體黏附劑16之扭曲且可均句地研磨 物件10之第二表面10b。儲存彈性模數為在以下條件下針 對22.7 mmMO mmx50 4爪之樣本大小的黏附劑所量測之 值:Temp Ramp模式、抗拉測試模式、在i Hz之頻率下、 0.04%之應變及5aC/min之溫度升高速率。可用由 160620.doc •17_ s 201246341S 160620.doc 15 201246341 Inner diameter of 350 mm and outer diameter of approximately 400 mm. The frame member 14 is shown to have an annular shape similar to the disc shape of the article 10 (having a central axis 14e (Fig. 3(a))), but the material, shape or size of the frame member 14 is other than the following. There is no particular limitation: the frame member 丨 4 has a shape and size that allows it to be placed along the periphery 12c of the film 12, and the frame member μ has a rigidity higher than that of the film 12. The frame member 14 can be formed of the same material as the film 12. The liquid adhesive 16 exhibits high adhesion strength so as to be able to firmly adhere the front surface 12a of the film cartridge 2 to the first surface i〇a of the article 10, and may be, for example, a curable adhesive, a solvent-based adhesive, including A thermoplastic resin or a water-dispersible adhesive of a hot-melt adhesive or the like. Here, the curable adhesive is a liquid hardened by applying heat or by irradiation with energy (such as uv irradiation). Adhesives Solvent-based adhesives are liquid adhesives that solidify by evaporation of the solvent. A hot-melt adhesive is an adhesive that refines after heating and solidifies upon cooling. The water-dispersible adhesive is an adhesive containing an adhesive component dispersed in water and solidified by evaporating water. The curable adhesive comprises: a one-component heat curable adhesive based on epoxy resin or amino carboxylic acid vinegar; a two-component reactive adhesive based on epoxy resin, urethane or acrylic resin; UV curable adhesive based on acrylic resin or epoxy resin; and electron beam curable adhesive. The solvent-based adhesive includes a rubber-based adhesive that dissolves rubber, an elastomer, or the like in a solvent. The terms "cured" and "coagulated" refer to hardening. The method of coating the film can be carried out in the step of grinding the back surface for forming a semiconductor wafer. In this case, the liquid adhesive 16 preferably has the following material 160620.doc • 16 · 201246341 Properties: permit the liquid adhesive 16 to be evenly and smoothly filled between the convex portions before the liquid adhesive 16 is solidified In the gap or in the linear trench for the "first dicing and re-polishing process", and forming a bonding layer 18 with a minimum of bubbles to no bubbles between the object (wafer) 1 〇 and the film 12 (Fig. 3 (Fig. 3 b)). In particular, in order to achieve a uniform thickness of the bonding layer 18, in one embodiment, prior to solidification, the liquid adhesive 16 has less than 1 〇pa.s in a working environment (eg, 25C) (i〇〇〇〇cp ) the viscosity. Here, the viscosity is a value measured by a Brookfield-type rotational viscosity (and the value is converted to (viscosity) = (indicative value) x (conversion factor) according to the rotor shape and the number of revolutions). For example, at 25. (: The environment uses a Brookfield-type viscometer (BM) having a rotor shape No. 2 and 12 claws (for example, "rvdV-E" available from Ky〇wa Kagaku KK (Tokyo)) The viscosity is measured. The liquid adhesive 16 is preferably in an operating environment (eg, at 25 C>c) after removal of the solvent (in the case of solvent-based adhesives), after curing (in the form of a curable adhesive) In the condition), after solidification (in the case of a hot-melt adhesive), has a storage elastic modulus of not less than 100 MPa, and at the highest achievable temperature during the step of grinding the back surface (for example, at 5 〇) It has a storage elastic modulus of not less than 10 MPa. In the case of storing the elastic modulus of the liquid adhesive, the distortion of the liquid adhesive 16 due to stress during the step of grinding the back surface can be prevented. And the second surface 10b of the article 10 can be uniformly ground. The storage elastic modulus is measured by an adhesive for a sample size of 22.7 mm MO mm x 50 4 claws under the following conditions: Temp Ramp mode, tensile test mode, At the frequency of i Hz, 0.04% strain and 5aC/min temperature increase rate. Available by 160620.doc •17_ s 201246341
Rheometric Co.製造之 SOLID ANALYZER RSA II(商標名 稱)來量測此儲存彈性模數。 為了防止在研磨背表面之步驟期間的水之進入或在切塊 步驟期間發生鏨平(邊緣鏨平),液體黏附劑較佳在凝固之 後具有(例如)〇·1 N/25 mm至0.5 N/25 mm之黏附強度,更 佳具有0.1 N/25 mm至0.2 N/25 mm之黏附強度。此處,藉 由根據JIS Z 0237之方法來量測黏附強度(亦即,在壓力 下’在重量為2.0 Kg之橡膠滚筒的以5 mm/sec進行之一個 往返旅程中’將25 mm寬度之測試件黏附至一黏附體 (SUS43 0BA板)’且在黏附之後20至40分鐘之後,在180°之 方向上用抗拉測試器以3〇〇±3〇 mm/min將測試件自黏附體 剝離)。在液體黏附劑16凝固之後的結合層18之厚度並不 受特定限制,而是較佳在准許填充第一表面l〇a之凹凸不 平度且使膜12平坦化的範圍中,例如,在10 μηι至15〇 μιη 之範圍中,且更佳在20 μιη至100 μιη之範圍中。 對於如上文所描述之組件群,在所展示之塗佈膜之方法 (或研磨背表面之方法)的下一步驟中,將液體黏附劑16配 置於物件10之第一表面10a上或膜12之前表面123上。可藉 由用合適器件滴落或塗覆液體黏附劑16而將液體黏附劑16 配置於物件10之第一表面l〇a上或膜12之前表面12&上。在 所展示之構造中’將物件1〇以第一表面l〇a面向上方式置 放於台20上(圖4(a)) ’且將足夠量之液體黏附劑16配置於 包括物件10之第一表面l〇a之中心軸線1〇d的區域中(圖 4(b))。當將液體黏附劑16配置於物件1〇之第一表面上 160620.doc -18- 201246341 時’可藉由(例如)使物件10圍繞其中心軸線1〇d旋轉或使物 件ίο振動而將液體黏附劑16均勻地展佈於整個第一表面 10a 上。 另一方面’將框架部件丨4沿膜丨2之周邊12c穩固地附著 至膜12(圖3(b))。在圖式中,框架部件14均勻地固定至沿 膜12之刖表面12a之整個周邊12c的環狀區域。可藉由各種 結合構件(諸如,黏附劑、雙面黏附帶、熔化結合等)來固 定框架部件14。在所展示之構造中,將與液體黏附劑16相 同之液體黏附劑用作結合構件,且用藉由液體黏附劑16之 凝固形成之結合層22將框架部件14之第二表面Mb穩固地 固定至膜12之前表面12a(圖3(b))。可藉由使用合適之喷嘴 將此液體黏附劑以連續線形式配置於沿膜丨2之前表面! 之周邊12c的環狀區域上或配置於框架部件14之第二表面 14b上。可藉由以下操作來配置液體黏附劑:藉由在使膜 12或框架部件14圍繞中心軸線12d或14e旋轉的同時使用一 靜止噴嘴,或藉由使用一自動化機器(諸如,機器人)來使 噴嘴以圓形轨道移動至靜止膜12或框架部件14上。 接下來,將物件10及膜12配置於相對位置中,其中第一 表面10a與前表面12a彼此相對。沿周邊12c(因此,框架部 件14)的膜12之區域自物件1〇向外延伸。第一表面i〇a與前 表面12a兩者接觸液體黏附劑16(圖4(c))。接著,將液體黏 附劑16廣闊地展佈於物件10之第一表面i〇a與膜12之前表 面12a之間(圊4(d)、圖4(e))。因為框架部件“沿周邊12〇而 均句地固定至媒丨2’所以可藉由框架部件14維持位於框架 160620.doc •19· 201246341 部件14内部的膜12之中心區域12e(圖3(b))處於一完全延伸 之狀態(亦即,無扭曲狀態)。因此,可使物件丨〇之第一表 面10a及膜12之前表面12a以彼此大體上平行配置接觸液體 黏附劑16。 使液體黏附劑16凝固以將膜12穩固地附著至物件10之第 一表面10a(圖4(f))。舉例而言’若液體黏附劑16為UV可固 化型黏附劑’則自背表面12b之側用UV輻射照射膜12以使 液體黏附劑16凝固。因為液體黏附劑16具有如上文所描述 之材料性質,所以液體黏附劑丨6填充形成於物件丨〇之第一 表面10a上的凸面部分丨丨之間的間隙或用於「先切塊再研 磨製程」之線性溝槽(未圖示),且在物件(晶圓)1〇與膜12 之間形成一不包括氣泡之結合層18(圖。結合層18將 膜12之前表面12a穩固地附著至物件1〇之整個第一表面 l〇a ’以使得物件10與膜12可穩固地支撐彼此。在所展示 之構造中’當液體黏附劑16凝固時,物件1〇、膜12及框架 部件14大體上彼此同轴配置。又,具有大體上均勻大小之 環狀間隙形成於物件1 〇之周邊1 〇c與框架部件丨4之内圓周 14c之間(圖2、圖3(b))。 在如上文所描述之構造中,可在使物件1〇之第一表面 l〇a與膜12之前表面na兩者接觸液體黏附劑16之前,執行 將框架部件14固定至膜12的步驟。或者,可在與使物件1〇 之第一表面10a與膜】2之前表面i2a兩者接觸液體黏附劑16 相同的時間或在該步驟之後,執行固定步驟。在使用相同 液體黏附劑16將框架部件14固定至膜12的構造中,可藉由 160620.doc -20· 201246341 塗覆等將液體黏附劑16配置於(例如)膜12之整個前表面12a 上。在與使物件10之第一表面10a與膜12之前表面12a兩者 接觸液體黏附劑16相同的時間或在該步驟少許之前或之 後’亦可使框架部件14之第二表面14b接觸液體黏附劑 16。在此狀態下,可使整個液體黏附劑丨6凝固以藉此形成 結合層18、22,以將膜12附著至物件1 〇與框架部件丨4兩 者。在此狀況下’需要在真空環境中執行以下步驟:使物 件10、膜12及框架部件14接觸液體黏附‘丨6的步驟,及使 液體黏附劑16凝固的步驟。可在真空環境中執行所有上述 步驟(包括接觸及凝固的步驟)。 在具有如上文所描述之塗佈膜之構造的方法中,因為具 有高於膜12之剛性之剛性的框架部件14沿周邊i2c而固定 至膜12 ’所以可維持位於框架部件丨4内部的膜丨2之中心區 域12e處於一實質上無扭曲之狀態。因此,物件1〇之第一 表面10a及膜12之前表面12a可大體上平行於彼此而配置, 且可接觸液體黏附劑16。因為將液體黏附劑16用作用於將 膜12結合至物件1〇之結合構件,所以可藉由液體黏附劑16 來填充物件10之第一表面l〇a的各種凹凸不平度,以達成 在液體黏附劑16凝固之後的膜12之平坦度。又,可在物件 1 0與膜12之間形成實質上不包括氣泡之結合層丨8。此結合 層18可穩定地維持高黏附強度歷時一較長週期。關於如上 文所描述之塗佈膜之方法,可藉由使用簡單技術來將膜12 準確地塗佈至物件1〇。 在藉由使用如上文所描述的塗佈膜之方法將膜12穩固地 160620.doc •21- 201246341 附著至物件10之第一表面10a的情況下,在所展示之研磨 背表面的方法中,自台20拾取物件10及膜12連同框架部件 14。在將組合顛倒之後,將該組合以物件丨〇之第二表面 l〇b面向上方式置放於另一靜止平台24上(圖3(b))。使用諸 如真空吸入器件等之固持構件,在框架部件14内部將物件 10及膜12固定地支撐於靜止平台24上。為了消除自框架部 件14向膜12施加之不必要的應力且維持膜12之平坦形式, 可在將框架部件14固定至物件1〇及膜丨2之狀態下固持框架 部件14。在此狀態下,用一研磨裝置(未圖示)研磨物件⑺ 之整個第二表面l〇b以形成一平坦的機械加工表面2 3(c))。 在具有上文所描述之構造的研磨背表面之方法中,因為 物件10之第一表面l〇a藉由膜12而受到保護,所以如與使 用玻璃板用於保護之方法相比’可減少成本。因為具有高 於膜12之剛性之剛性的框架部件14沿周邊i2c而固定至膜 12,所以可保持位於框架部件14内部的膜12之中心區域 12e實質上無扭曲。物件1〇之第一表面i〇a及膜口之前表面 12a可大體上平行於彼此而配置,且可接觸液體黏附劑 16另外’可藉由處置框架部件“來快速地執行用於研磨 物件10之第—表面l〇b的準備卫作(例如,將其顛倒、將其 置放於靜止平台上等)。 因為將液體黏附劑16用作用於將臈12結合至物件1〇的構 件所以確保了在液體黏附劑16凝固之後的膜^的平坦 度且可在物件1〇與膜12之間形成不包括氣泡之結合層 160620.docThe storage elastic modulus was measured by SOLID ANALYZER RSA II (trade name) manufactured by Rheometric Co. In order to prevent the ingress of water during the step of grinding the back surface or the flattening (edge flattening) during the dicing step, the liquid adhesive preferably has, for example, 〇·1 N/25 mm to 0.5 N after solidification. Adhesion strength of /25 mm, more preferably adhesion strength of 0.1 N/25 mm to 0.2 N/25 mm. Here, the adhesion strength is measured by the method according to JIS Z 0237 (that is, under pressure, 'a round trip at 5 mm/sec of a rubber roller having a weight of 2.0 Kg' will be 25 mm width The test piece is adhered to an adhesive body (SUS43 0BA plate) and the test piece is self-adhered with a tensile tester at 3 〇〇 ± 3 〇 mm/min in the direction of 180° 20 to 40 minutes after the adhesion. Stripped). The thickness of the bonding layer 18 after the liquid adhesive 16 is solidified is not particularly limited, but is preferably in a range permitting filling of the unevenness of the first surface 10a and flattening the film 12, for example, at 10 It is in the range of μηι to 15〇μηη, and more preferably in the range of 20 μm to 100 μηη. For the component group as described above, the liquid adhesive 16 is disposed on the first surface 10a of the article 10 or the film 12 in the next step of the method of coating the film (or the method of polishing the back surface). Before the surface 123. The liquid adhesive 16 can be disposed on the first surface 10a of the article 10 or the front surface 12& of the film 12 by dropping or coating the liquid adhesive 16 with a suitable device. In the configuration shown, the object 1 is placed on the stage 20 with the first surface 10a facing up (Fig. 4(a))' and a sufficient amount of the liquid adhesive 16 is disposed on the object 10 In the region of the center axis 1〇d of the first surface 10a (Fig. 4(b)). When the liquid adhesive 16 is disposed on the first surface of the object 1160160620.doc -18-201246341, the liquid can be liquidated by, for example, rotating the object 10 about its central axis 1〇d or vibrating the object The adhesive 16 is uniformly spread over the entire first surface 10a. On the other hand, the frame member 丨4 is firmly attached to the film 12 along the periphery 12c of the film bundle 2 (Fig. 3(b)). In the drawings, the frame member 14 is uniformly fixed to an annular region along the entire periphery 12c of the weir surface 12a of the film 12. The frame member 14 can be fixed by various bonding members such as an adhesive, double-sided adhesive bonding, fusion bonding, and the like. In the configuration shown, the same liquid adhesive as the liquid adhesive 16 is used as the bonding member, and the second surface Mb of the frame member 14 is firmly fixed by the bonding layer 22 formed by solidification of the liquid adhesive 16. To the front surface 12a of the film 12 (Fig. 3(b)). This liquid adhesive can be placed in a continuous line along the front surface of the membrane 藉2 by using a suitable nozzle! The annular region of the periphery 12c is disposed on the second surface 14b of the frame member 14. The liquid adhesive can be configured by using a stationary nozzle while rotating the membrane 12 or the frame member 14 about the central axis 12d or 14e, or by using an automated machine such as a robot. The circular track is moved to the stationary film 12 or the frame member 14. Next, the article 10 and the film 12 are disposed in opposite positions, wherein the first surface 10a and the front surface 12a are opposed to each other. The area of the film 12 along the periphery 12c (and therefore the frame member 14) extends outwardly from the article 1〇. Both the first surface i〇a and the front surface 12a are in contact with the liquid adhesive 16 (Fig. 4(c)). Next, the liquid adhesive 16 is widely spread between the first surface i〇a of the article 10 and the front surface 12a of the film 12 (圊4(d), Fig. 4(e)). Since the frame member is "fixed to the media 2" uniformly along the periphery 12, the central portion 12e of the film 12 located inside the frame 14 of the frame 160620.doc • 19· 201246341 can be maintained by the frame member 14 (Fig. 3(b) )) is in a fully extended state (i.e., no twisted state). Therefore, the first surface 10a of the article and the front surface 12a of the film 12 can be placed in contact with the liquid adhesive 16 in substantially parallel relationship with each other. The agent 16 solidifies to firmly adhere the film 12 to the first surface 10a of the article 10 (Fig. 4(f)). For example, if the liquid adhesive 16 is a UV curable adhesive, it is from the side of the back surface 12b. The film 12 is irradiated with UV radiation to solidify the liquid adhesive 16. Since the liquid adhesive 16 has the material properties as described above, the liquid adhesive 丨6 fills the convex portion formed on the first surface 10a of the article 丨a gap between the turns or a linear groove (not shown) for the "cutting and re-polishing process", and a bonding layer 18 not including bubbles is formed between the object (wafer) 1 and the film 12 ( The bonding layer 18 stabilizes the front surface 12a of the film 12. Attached to the entire first surface 10a' of the object 1〇 so that the object 10 and the film 12 can stably support each other. In the illustrated construction, when the liquid adhesive 16 is solidified, the object 1〇, the film 12 and The frame members 14 are disposed substantially coaxially with each other. Further, an annular gap having a substantially uniform size is formed between the periphery 1 〇c of the article 1 与 and the inner circumference 14c of the frame member 丨 4 (Fig. 2, Fig. 3 (b In the configuration as described above, the fixing of the frame member 14 to the film 12 may be performed before the first surface 10a of the article 1 and the front surface na of the film 12 are brought into contact with the liquid adhesive 16. Alternatively, the fixing step may be performed at the same time as or after the first surface 10a of the article 1a and the surface i2a before the film i2a is contacted with the liquid adhesive 16. The same liquid adhesive 16 is used. The frame member 14 is fixed to the structure of the film 12, and the liquid adhesive 16 can be disposed on, for example, the entire front surface 12a of the film 12 by coating or the like, 160620.doc -20 201204641. The first surface 10a is in contact with both the front surface 12a of the film 12. The body adhesive 16 can also contact the second surface 14b of the frame member 14 with the liquid adhesive 16 at the same time or a little before or after the step. In this state, the entire liquid adhesive 丨6 can be solidified. The bonding layers 18, 22 are formed to adhere the film 12 to both the article 1 and the frame member 4. In this case, it is necessary to perform the following steps in a vacuum environment: bringing the article 10, the film 12 and the frame member 14 into contact with the liquid The step of adhering '丨6' and the step of solidifying the liquid adhesive 16. All of the above steps (including the steps of contact and solidification) can be performed in a vacuum environment. In the method having the configuration of the coating film as described above, since the frame member 14 having rigidity higher than the rigidity of the film 12 is fixed to the film 12' along the periphery i2c, the film located inside the frame member 丨4 can be maintained The central region 12e of the crucible 2 is in a substantially undistorted state. Therefore, the first surface 10a of the article 1 and the front surface 12a of the film 12 can be disposed substantially parallel to each other and can contact the liquid adhesive 16. Since the liquid adhesive 16 is used as a bonding member for bonding the film 12 to the object 1 , various irregularities of the first surface 10a of the article 10 can be filled by the liquid adhesive 16 to achieve the liquid. The flatness of the film 12 after the adhesive 16 is solidified. Further, a bonding layer 8 substantially free of air bubbles can be formed between the object 10 and the film 12. This bonding layer 18 can stably maintain a high adhesion strength for a long period of time. Regarding the method of coating a film as described above, the film 12 can be accurately applied to the article 1 by using a simple technique. In the case where the film 12 is firmly attached to the first surface 10a of the article 10 by using a method of coating a film as described above, in the method of polishing the back surface, The article 10 and the film 12 are picked up from the table 20 together with the frame member 14. After the combination is reversed, the combination is placed on the other stationary platform 24 with the second surface l〇b of the article facing up (Fig. 3(b)). The object 10 and the film 12 are fixedly supported on the stationary stage 24 inside the frame member 14 by using a holding member such as a vacuum suction device. In order to eliminate unnecessary stress applied from the frame member 14 to the film 12 and to maintain the flat form of the film 12, the frame member 14 can be held in a state where the frame member 14 is fixed to the article 1 and the film 2. In this state, the entire second surface 10b of the article (7) is ground by a grinding device (not shown) to form a flat machined surface 23(c)). In the method of polishing the back surface having the configuration described above, since the first surface 10a of the article 10 is protected by the film 12, it can be reduced as compared with the method of using a glass plate for protection. cost. Since the frame member 14 having rigidity higher than the rigidity of the film 12 is fixed to the film 12 along the periphery i2c, the central portion 12e of the film 12 located inside the frame member 14 can be kept substantially free of distortion. The first surface i〇a of the object 1〇 and the front surface 12a of the film opening may be disposed substantially parallel to each other, and may contact the liquid adhesive 16 and may be quickly performed by the treatment frame member “for the abrasive article 10 The first surface-preparation of the surface l〇b (for example, reversing it, placing it on a stationary platform, etc.). Since the liquid adhesive 16 is used as a member for bonding the crucible 12 to the object 1〇, it is ensured. The flatness of the film after the liquid adhesive 16 is solidified and a bonding layer not including bubbles may be formed between the object 1〇 and the film 12160.doc
S •22· 201246341 18在”有膜12之平坦度及物件1〇之第一表面心與膜12 之則表面12a的平行度的情況下,可均勻地研磨物件1〇之 第一表面10b以便形成一平坦的機械加工表面%。可將物 件10之厚度均勻地減小至大約幾十微米。實質上不包括氣 泡之結合層18可維持高黏附強度歷時一較長週期,且另 外具有防止處理液體在研磨步驟期間進入之效應。因 此關於如上文所描述的研磨背表面之方法,可藉由使用 簡單技術來準確地減小物件1〇之厚度。 在如本文中所揭示的形成半導體晶片之此方法中,研磨 與晶圓(亦即’物件10)之電路側(亦即,第一表面l〇a)相反 之背表面(亦即,第二表面1〇b)以形成一機械加工表面%。 在晶圓(物件10)具有所形成之機械加工表面26的情況下, 沿預定切割線對機械加工表面26執行切割(切塊),以將晶 圓(物件10)劃分成複數個晶片(未圖示卜此處當將具有 機械加工表面26之晶圓(物件10)置放於靜止平台24上時, 可在藉由晶圓(物件1〇)與膜12之間的結合層18提供之強黏 附力下準確i也執行切割㈣。因此,關於形成半導體晶片 之此方法’可使用簡單技術來準確地執行藉由研磨背表面 進行的曰曰圓之厚度的減小及藉由切割形成複數個晶片。 關於一種根據本發明之另一實施例的形成半導體晶片之 方法,可使用如上文所提及之日本未審查專利公開案 (Kokai)第2008-010464號中所描述的先切塊再研磨製程。 在此構造中’藉由在厚度方向上在晶圓(亦即,物件10)之 電路側(亦即’第—表面1 Ga)上的預位置(上文所描述之 s 160620.doc •23· 201246341 切塊步驟中的切割位置)處切割而預先形成線性溝槽。因 此’當藉由在研磨背表面之上文所描述之步驟中研磨與晶 圓(物件1 〇)之電路側(亦即,第一表面1 〇a)相反的背表面 (亦即,第二表面10b)而形成機械加工表面26時,可將晶圓 (物件10)劃分成複數個晶片(未圖示)。稍後將描述切塊步 驟及先切塊再研磨方法的細節。 在上文所描述的塗佈膜之方法(或研磨背表面之方法、 形成半導體晶片之方法)中,當將框架部件14沿周邊12c固 定至膜12時,可藉由徑向向外施加至膜12之實質上均勻張 力將框架部件14固定至膜12。因此,膜12(尤其在中心區 域12e中)完全延伸及拉伸(圖5(a)及圖。在此構造中, 需要在張力下使用與液體黏附劑16相同之液體黏附劑將框 架部件14塗佈至膜12。當膜12處於張力下時,使液體黏附 劑凝固。在因此形成之結合層22的情況下,將框架部件i 4 之第二表面14b穩固地固定至膜12之前表面12a。在此狀況 下’可預先切割及移除膜12之過多部分,以便使膜12在固 定框架部件14之前具有類似於框架部件14之形狀。或者, 可切割及移除膜12之過多部分,以便使膜丨2在固定框架部 件14之後具有類似於框架部件14之形狀。較佳地,判定施 加至膜12之張力(tension或tensile force)以便使膜12之撓曲 最小化’且該張力可在(例如)1() g/cm至1000 g/cni之範圍 中°需要框架部件14具有足以維持張緊膜12處於張緊狀態 的剛性。 在此構造之情況下,可藉由框架部件丨4穩固地維持位於S • 22· 201246341 18 in the case where there is a flatness of the film 12 and a parallelism between the first surface of the object 1 and the surface 12a of the film 12, the first surface 10b of the object 1 can be uniformly ground so that Forming a flat machined surface %. The thickness of the article 10 can be uniformly reduced to about several tens of micrometers. The bonding layer 18, which substantially does not include bubbles, can maintain high adhesion strength for a longer period of time and additionally has a prevention process The effect of the liquid entering during the grinding step. Thus with regard to the method of grinding the back surface as described above, the thickness of the article 1 can be accurately reduced by using a simple technique. Forming a semiconductor wafer as disclosed herein In this method, the back surface (ie, the second surface 1〇b) opposite to the circuit side (ie, the first surface 10a) of the wafer (ie, the 'object 10) is ground to form a machined surface. In the case where the wafer (object 10) has the formed machined surface 26 formed, the machined surface 26 is cut (diced) along a predetermined cutting line to divide the wafer (object 10) into a plurality of crystals. (Not shown here, when the wafer having the machined surface 26 (object 10) is placed on the stationary stage 24, the bonding layer 18 between the wafer (object 1) and the film 12 can be used. The sharpness is also provided under the strong adhesion. (4) Therefore, the method for forming a semiconductor wafer can use a simple technique to accurately perform the reduction of the thickness of the round by polishing the back surface and by cutting A plurality of wafers are formed. Regarding a method of forming a semiconductor wafer according to another embodiment of the present invention, a first cut as described in the above-mentioned Japanese Unexamined Patent Publication (Kokai) No. 2008-010464 Block re-polishing process. In this configuration 'pre-position on the circuit side of the wafer (ie, object 10) in the thickness direction (ie, 'first surface 1 Ga') (described above) 160620.doc •23·201246341 Cutting position in the dicing step) is cut to pre-form a linear groove. Therefore 'When grinding and wafers (object 1 〇) by the steps described above in grinding the back surface Circuit side (ie, the first When a surface 1 〇 a) an opposite back surface (ie, the second surface 10b) forms the machined surface 26, the wafer (object 10) can be divided into a plurality of wafers (not shown). Details of the dicing step and the dicing regrind method. In the method of coating a film described above (or a method of polishing a back surface, a method of forming a semiconductor wafer), when the frame member 14 is fixed to the periphery 12c to At the time of film 12, frame member 14 can be secured to film 12 by a substantially uniform tension applied radially outward to film 12. Thus, film 12 (especially in central region 12e) is fully extended and stretched (Fig. 5 (Fig. 5 a) and Fig. In this configuration, it is necessary to apply the frame member 14 to the film 12 under tension using the same liquid adhesive as the liquid adhesive 16. When the film 12 is under tension, the liquid adhesive is allowed to set. In the case of the bonding layer 22 thus formed, the second surface 14b of the frame member i 4 is firmly fixed to the front surface 12a of the film 12. In this case, the excess portion of the film 12 can be pre-cut and removed so that the film 12 has a shape similar to that of the frame member 14 prior to fixing the frame member 14. Alternatively, excess portions of film 12 can be cut and removed so that film dome 2 has a shape similar to frame member 14 after fixing frame member 14. Preferably, the tension or tensile force applied to the film 12 is determined to minimize the deflection of the film 12 and the tension may be in the range of, for example, 1 () g/cm to 1000 g/cni. The frame member 14 is required to have a rigidity sufficient to maintain the tension film 12 in a tensioned state. In the case of this configuration, it can be firmly maintained by the frame member 丨4
160620.doc •24· S 201246341 框架部件14之内圓周14c内部的膜12之中心區域12e實質上 無扭曲歷時一較長週期。因此,可更準確地執行膜塗佈之 步驟、研磨背表面之步驟以及切塊步驟。 在如上文所描述的塗佈膜之方法(或研磨背表面之方 法、形成半導體晶片之方法)中’當將框架部件丨4沿周邊 12c固定至膜12時’可將框架部件14固定至膜12之背表面 12b,如圖6(a)中所展示。在該圖式中,框架部件14均勻地 固疋至沿膜12之背表面12b之整個周邊12c的環狀區域。可 藉由各種結合構件(諸如’黏附劑、雙面黏附帶、熔化結 合等)來實現框架部件14之固定。在所展示之構造中,將 與液體黏附劑16相同之液體黏附劑用作結合構件。在液體 黏附劑凝固後便形成的結合層將框架部件丨4之第一表面 14a穩固地固定至膜12之背表面i2b。塗佈此液體黏附劑的 細節與將框架部件14固定至膜12之第一表面12&的先前構 造中的細節相同。 在此構造之情況下,如同將框架部件14固定至膜丨2之第 一表面12a的先前構造,可藉由框架部件丨4維持位於框架 部件14之内圓周14c内部的膜12之中心區域12e處於實質上 無扭曲的狀態’以使得可使用簡單技術將膜12準確地塗佈 至物件10。尤其在此構造之情況下,在研磨背表面之步驟 中或在切塊步驟中,藉由將膜12之中心區域I2e以物件1〇 之第二表面10b面向上方式固定地置放於靜止平台24上(圖 6(b)) ’可消除對框架部件14之存在阻礙研磨裝置或切塊裝 置之平滑處置的畏懼。又,可使對物件1 〇之研磨碎片保留160620.doc •24· S 201246341 The central region 12e of the membrane 12 inside the inner circumference 14c of the frame member 14 is substantially free of distortion for a longer period. Therefore, the steps of film coating, the step of grinding the back surface, and the dicing step can be performed more accurately. In the method of coating a film as described above (or a method of polishing a back surface, a method of forming a semiconductor wafer) 'When the frame member 丨 4 is fixed to the film 12 along the periphery 12c', the frame member 14 can be fixed to the film The back surface 12b of 12 is as shown in Figure 6(a). In this illustration, the frame member 14 is uniformly fixed to an annular region along the entire periphery 12c of the back surface 12b of the film 12. The fixing of the frame member 14 can be achieved by various bonding members such as an 'adhesive, double-sided adhesive, fusion bonding, and the like. In the configuration shown, the same liquid adhesive as the liquid adhesive 16 was used as the bonding member. The bonding layer formed after the liquid adhesive is solidified securely fixes the first surface 14a of the frame member 4 to the back surface i2b of the film 12. The details of applying this liquid adhesive are the same as those in the prior construction of securing the frame member 14 to the first surface 12& In the case of this configuration, as in the previous configuration of fixing the frame member 14 to the first surface 12a of the film cartridge 2, the central portion 12e of the film 12 located inside the inner circumference 14c of the frame member 14 can be maintained by the frame member 丨4. In a substantially non-twisted state 'so that the film 12 can be accurately applied to the article 10 using simple techniques. Particularly in the case of this configuration, in the step of grinding the back surface or in the dicing step, the central region I2e of the film 12 is fixedly placed on the stationary platform with the second surface 10b of the object 1 facing upward. 24 (Fig. 6(b)) 'can eliminate the fear that the presence of the frame member 14 hinders the smooth handling of the grinding device or the dicing device. Also, it is possible to retain the abrasive fragments of the object 1
•25· 160620.doc S 201246341 於物件10與框架部件14之間的環狀間隙中的畏懼最小化。 因此,可更準確地執行研磨背表面之步驟以及切塊步驟。 在如上文所描述的塗佈膜之方法(或研磨背表面之方 法、形成半導體晶片之方法)中,在使液體黏附劑16凝固 的步驟之前’可在第一表面l〇a與前表面12a兩者接觸液體 黏附劑16的情況下,使物件1〇及膜12旋轉,以便可將液體 黏附劑16完全展佈於第一表面1〇&與前表面i2a之間(圖 4(d))。在此狀況下,藉由離心力之作用來移除過多液體黏 附劑16 ’且當膜12之前表面12a實質接觸物件1〇之第一表 面10a之凸面部分11時,可停止物件1〇及膜之旋轉(圖 4(e))。在通常被稱作旋塗步驟之此技術的情況下,即使物 件10之第一表面10a具有各種凹凸不平度,亦可將液體黏 附劑16完全地配置至物件1〇之第一表面i〇a與膜12之前表 面12a之間的間隙的每個拐角中。因此,在液體黏附劑16 凝固之後,可可靠地形成不包括氣泡之結合層18(圖 4(f))。 在如上文所描述之旋塗步驟中,當在第一表面1〇a與前 表面12a兩者接觸液體黏附劑16的情況下,使物件及模 12旋轉時’如圖7(a)中所展示,可使物體1〇及膜12以同轴 配置旋轉,同時將框架部件14固定地支撐至物件1〇。在此 構造之情況下’可藉由固定地支擇至物件之框架部件14來 防止膜12相對於物件10之可能的上升及中心轴線1〇d、i2d 之位置偏差(其可能在旋轉期間發生)。因此,在液體黏附 劑16凝固之後’可獲得膜12之改良之平坦度及物件之第• 25· 160620.doc S 201246341 The fear in the annular gap between the article 10 and the frame member 14 is minimized. Therefore, the step of grinding the back surface and the dicing step can be performed more accurately. In the method of coating a film as described above (or a method of polishing a back surface, a method of forming a semiconductor wafer), before the step of solidifying the liquid adhesive 16 'on the first surface 10a and the front surface 12a When the two are in contact with the liquid adhesive 16, the object 1 and the film 12 are rotated so that the liquid adhesive 16 can be completely spread between the first surface 1 & and the front surface i2a (Fig. 4(d) ). In this case, the excess liquid adhesive 16' is removed by the action of centrifugal force and the object 1 and the film can be stopped when the front surface 12a of the film 12 substantially contacts the convex portion 11 of the first surface 10a of the object 1〇. Rotate (Fig. 4(e)). In the case of this technique, which is generally referred to as a spin coating step, even if the first surface 10a of the article 10 has various irregularities, the liquid adhesive 16 can be completely disposed to the first surface i〇a of the object 1〇. In each corner of the gap with the front surface 12a of the film 12. Therefore, after the liquid adhesive 16 is solidified, the bonding layer 18 not including the air bubbles can be reliably formed (Fig. 4(f)). In the spin coating step as described above, when the first surface 1a and the front surface 12a are in contact with the liquid adhesive 16, the object and the mold 12 are rotated as shown in Fig. 7(a). It is shown that the object 1 and the film 12 can be rotated in a coaxial configuration while the frame member 14 is fixedly supported to the object 1〇. In the case of this configuration, the possible rise of the film 12 relative to the object 10 and the positional deviation of the central axes 1〇d, i2d (which may occur during rotation) can be prevented by fixedly selecting to the frame member 14 of the article. ). Therefore, after the liquid adhesive 16 is solidified, the improved flatness and the object of the film 12 can be obtained.
160620.doc •26· S 201246341 一表面l〇a與膜12之前表面12a之間的平行度。 除圖7(a)中所展示之構造之外或代替圖7(a)中所展示之 構造,亦可在第一表面1 〇a與前表面12a兩者接觸液體黏附 劑16的情況下’使物件10及膜12以同轴配置旋轉,同時將 膜12固定地支撐至物件10,如圖7(b)中所展示。亦在此構 造之情況下,可藉由固定地支撐至物件之膜12來防止膜12 相對於物件10之可能的移動及中心轴線l〇d、l2d之位置偏 差(其可能在旋塗步驟期間發生)。因此,在液體黏附劑i 6 凝固之後’可確保膜12之平坦度及物件1〇之第一表面i〇a 與膜12之前表面12a之間的平行度處於高等級。 一種根據本發明之一實施例的塗佈膜以用於實施圖7(a) 中所展示之旋塗步驟的裝置包含:一框架支撐部分28,其 用於在物件10之第一表面l〇a與臈12之前表面12a兩者接觸 液體黏附劑16的情況下,相對於物件10而穩固地支樓框架 部件14 ;及一驅動部分(用於台2〇及框架支撐部分28之一 方疋轉驅動機構(未圖示)),其用於在框架支揮部分28相對於 物件10而穩固地支撐框架部件14的狀態下,使物件1〇及膜 12以同轴配置旋轉。框架支撐部分28具有一支撐平台, 支撐平台30能夠在各別中心轴線1〇d、12d、14e彼此重合 的情況下,以同軸配置相對於固定地置放於台2〇上的物件 來穩固地支撐框架部件14(膜12沿周邊12c而固定至框架部 件14)。支撑平台3G可具有—校正機構,該校正機構用於 校正(若有的話)框架部件丨4自身之扭曲。 框架支擇部分28亦可具有-徑向地位於切平台⑼内部 160620.doc 27· s 201246341 之環狀壁部分32,環狀壁部分32用於接收藉由離心力而自 物件10與膜12之間的間隙排出的過多液體黏附劑1 6。舉例 而言’由壁部分32接收之過多液體黏附劑16藉由未展示之 回收機構來收集’且可加以再使用^壁部分32可具有一形 狀’該形狀准許在框架部件14支撐於支撐平台30上的情況 下’膜12之中心區域i2e升高一點兒,以便變得在背表面 12b中凸出來(如所展示)。在此構造之情況下,即使框架部 件14自身具有扭曲,亦可使物件10之第一表面i〇a及膜12 之前表面12a接觸液體黏附劑16而不受此扭曲影響。儘管 在所展示之構造中’將物件10以第一表面l〇a面向上方式 置放於台20上’但物件1〇與膜12在垂直方向上的位置關係 可顛倒》 框架支撐部分28可一體式地連接至台20而成一個單元, 或框架支撐部分28可與台20在功能上分離。若框架支撐部 分28—體式地連接至台20,則物件1〇與膜12經由框架部件 14而同步旋轉》藉由在將液體黏附劑16***於物件1〇與膜 12之間的情況下使物件1 〇與膜12同步旋轉,在一些狀況 下,可改良膜12之平坦度。若框架支撐部分28與台20在功 能上分離,則可故意地使物件10與框架部件14(藉此膜12) 不同步地旋轉。藉由在將液體黏附劑16***於物件1〇與膜 12之間的情況下使物件10及膜12以不同旋轉速度旋轉,在 一些狀況下,可改良膜12之平坦度。所展示的塗佈膜之裝 置可進一步包含以下機構:用於精細調整台20與支揮平台 30之相對位置關係(因此,物件10與膜12之相對位置關係) 160620.doc • 28· 201246341 的機構’或用於使台20振動以用於預先將液體黏附劑16展 佈於物件10之整個第一表面10a上的機構。 除上文所描述之框架支撐部分28之外或代替上文所描述 之框架支撐部分28 ’ 一種根據本發明之另一實施例的塗佈 膜以用於實施圖7(b)中所展示之旋塗步驟的裝置亦包含: 一膜支撐部分34’其用於在物件1〇之第一表面10a與膜12 之前表面12a兩者接觸液體黏附劑16的情況下,相對於物 件10來穩固地支撐膜12;及一驅動部分(用於台20及膜支 撐部分34之一旋轉驅動機構(未圖示)),其用於在膜支撐部 分34相對於物件1〇而穩固地支撐膜12的狀態下,使物件1〇 及膜12以同軸配置旋轉。膜支撐部分34具有一支撐平台 36 ’支撐平台36能夠在各別中心軸線i〇d、I2d彼此重合的 情況下’以同軸配置相對於固定地置放於台2〇上的物件來 穩固地支撐膜12。支撐平台36可借助於(例如)真空吸入器 件或黏附力而自背表面12b支撐膜12之中心區域I2e。 膜支撐部分34可經建構以使得,在膜12支撐於支樓平台 36上的情況下’膜支撐部分34可防止來自膜12之壓力(歸 因於其自身重里專)被施加至物件1〇,或膜支撐部分34可 故意將來自膜12之壓力施加至物件1〇,或膜支撐部分34可 將膜12抬高遠離物件1〇。在任何構造中,在將液體黏附劑 16***於物件1〇與膜12之間的情況下,在一些狀況下,可 改良膜12之平坦度。臈支撐部分34可經建構,以便與台2〇 同步旋轉’或以便故意地與台20不同步地旋轉。在任何構 造中’在將液體黏附劑16***於物件1 〇與膜12之間的情況160620.doc •26· S 201246341 The parallelism between a surface l〇a and the front surface 12a of the film 12. In addition to or instead of the configuration shown in FIG. 7(a), in the case where both the first surface 1 〇a and the front surface 12a are in contact with the liquid adhesive 16 ' The article 10 and film 12 are rotated in a coaxial configuration while the film 12 is fixedly supported to the article 10, as shown in Figure 7(b). Also in this configuration, the possible movement of the film 12 relative to the article 10 and the positional deviation of the central axes l〇d, l2d can be prevented by fixedly supporting the film 12 to the article (which may be in the spin coating step) Occurs during the period). Therefore, the flatness of the film 12 and the parallelism between the first surface i〇a of the object 1〇 and the front surface 12a of the film 12 are ensured to be high after the liquid adhesive i 6 is solidified. A coating film according to an embodiment of the present invention for use in implementing the spin coating step shown in Figure 7(a) includes a frame support portion 28 for use on the first surface of the article 10. a and the front surface 12a of the crucible 12 are in contact with the liquid adhesive 16, the strut frame member 14 is firmly fixed with respect to the object 10; and a driving portion (for one of the table 2 turns and the frame supporting portion 28) A mechanism (not shown) for rotating the article 1 and the film 12 in a coaxial configuration in a state where the frame supporting portion 28 firmly supports the frame member 14 with respect to the article 10. The frame supporting portion 28 has a supporting platform capable of being stabilized in a coaxial configuration with respect to objects fixedly placed on the table 2 with the respective center axes 1〇d, 12d, 14e overlapping each other. The frame member 14 is supported (the film 12 is fixed to the frame member 14 along the periphery 12c). The support platform 3G can have a correction mechanism for correcting, if any, the distortion of the frame member 丨4 itself. The frame-retaining portion 28 can also have an annular wall portion 32 that is radially located inside the cutting platform (9) 160620.doc 27·s 201246341, and the annular wall portion 32 is adapted to receive the object 10 and the membrane 12 by centrifugal force. Excess liquid adhesion agent 16 discharged between the gaps. For example, the excess liquid adhesive 16 received by the wall portion 32 is collected by a recycling mechanism not shown and can be reused. The wall portion 32 can have a shape that permits support of the frame member 14 to the support platform. In the case of 30, the central region i2e of the film 12 is raised a little to become convex in the back surface 12b (as shown). In the case of this configuration, even if the frame member 14 itself has a twist, the first surface i〇a of the article 10 and the front surface 12a of the film 12 can be brought into contact with the liquid adhesive 16 without being affected by the distortion. Although the object 10 is placed on the stage 20 with the first surface 10a facing up in the illustrated configuration, the positional relationship of the object 1 and the film 12 in the vertical direction may be reversed. The frame supporting portion 28 may be One unit is integrally connected to the table 20, or the frame support portion 28 can be functionally separated from the table 20. If the frame supporting portion 28 is integrally connected to the stage 20, the object 1〇 and the film 12 are synchronously rotated via the frame member 14 by the case where the liquid adhesive 16 is inserted between the object 1 and the film 12 The object 1 is rotated in synchronism with the film 12, and in some cases, the flatness of the film 12 can be improved. If the frame support portion 28 is functionally separated from the table 20, the article 10 can be intentionally rotated asynchronously with the frame member 14 (by which the film 12). By rotating the article 10 and the film 12 at different rotational speeds while inserting the liquid adhesive 16 between the article 1 and the film 12, the flatness of the film 12 can be improved in some cases. The apparatus for coating a film may further include a mechanism for the relative positional relationship between the fine adjustment stage 20 and the support platform 30 (hence, the relative positional relationship between the object 10 and the film 12) 160620.doc • 28·201246341 The mechanism 'or mechanism for vibrating the stage 20 for pre-distributing the liquid adhesive 16 over the entire first surface 10a of the article 10. A coated film according to another embodiment of the present invention, in addition to or in place of the frame supporting portion 28 described above, for use in implementing the embodiment shown in Figure 7(b) The apparatus for the spin coating step also includes: a film supporting portion 34' for stably holding the liquid adhesive 16 between the first surface 10a of the object 1 and the front surface 12a of the film 12, with respect to the object 10. a support film 12; and a driving portion (for one of the table 20 and the film supporting portion 34, a rotational driving mechanism (not shown)) for stably supporting the film 12 at the film supporting portion 34 with respect to the object 1 In the state, the object 1 and the film 12 are rotated in a coaxial configuration. The film supporting portion 34 has a supporting platform 36'. The supporting platform 36 can be stably supported in a coaxial configuration with respect to an object fixedly placed on the table 2 in a case where the respective center axes i〇d, I2d coincide with each other. Membrane 12. The support platform 36 can support the central region I2e of the membrane 12 from the back surface 12b by means of, for example, a vacuum inhalation device or adhesive force. The membrane support portion 34 can be constructed such that, in the case where the membrane 12 is supported on the pedestal platform 36, the membrane support portion 34 can prevent the pressure from the membrane 12 (due to its own weight) from being applied to the article 1 〇 Alternatively, or the membrane support portion 34 may intentionally apply pressure from the membrane 12 to the article 1 , or the membrane support portion 34 may lift the membrane 12 away from the article 1 . In any configuration, in the case where the liquid adhesive 16 is inserted between the article 1 and the film 12, the flatness of the film 12 can be improved under some conditions. The ankle support portion 34 can be constructed to rotate in rotation with the table 2' or to deliberately rotate asynchronously with the table 20. In any configuration 'in the case where the liquid adhesive 16 is inserted between the object 1 and the film 12
160620.doc -29 S 201246341 下’在一些狀況下,可改良膜12之平坦度。 下文將參看圖8來描述根據本發明之再一實施例的塗佈 膜之方法、研磨背表面之方法及形成半導體晶片之方法。 除了不包括旋塗步驟(在該旋塗步驟中,在第一表面1〇a與 則表面12a兩者接觸液體黏附劑丨6的情況下,使物件丨〇及 膜12旋轉)之外,所展示之方法具有與上文參看圖3及圖4 所描述之方法相同的構造。因此,將適當地省略對應構造 之描述。 首先,提供以下各者(圖1): 一物件1〇,其具有第一表 面10a及與第一表面1〇a相反之第二表面1〇b :一可撓性膜 12,其具有大於第一表面1〇a之一前表面12a ; 一框架部件 14,其具有可沿膜12之周邊12c置放之形狀及大小,且具 有高於膜12之剛性的剛性;及一液體黏附劑16。接下來, 將物件10以第一表面10a面向上方式置放於台2〇上(圖 8(a))。接著,將液體黏附劑16配置於一區域上,該區域包 括物件ίο之第一表面10a之中心軸線10d(圖8(b))。在此狀 態下,使物件10圍繞中心轴線10d旋轉,以將液體黏附劑 16展佈於整個第一表面i〇a上(圖g(c))。 另一方面,將框架部件14沿周邊12c固定至膜12。接 著,將物件10及膜12配置於一相對位置中,其中第一表面 10a與前表面12a相對且沿周邊12c(因此,框架部件14)的膜 12之一區域自物件10向外延伸,且第一表面1〇a與前表面 12a兩者接觸液體黏附劑16(圖8(d))。由於框架部件14沿臈 12之周邊12c而均勻地固定,故可藉由框架部件μ維持位 160620.doc -30- 201246341 於框架部件14内部的膜12之中心區域12e處於延伸之狀態 (亦即,無扭曲之狀態),以使得物件1〇之第一表面l〇a與膜 12之前表面12a可以相對於彼此大體上平行配置接觸液體 黏附劑16。 接下來,使液體黏附劑16凝固且將物件10之第一表面 l〇a穩固地附著至膜12(圖8(e))。由於液體黏附劑16具有如 上文所描述之材料性質,故液體黏附劑16可均勻地且平滑 地填充形成於物件10之第一表面1 〇a上的凸面部分11之間 的間隙,且可在物件10與膜12之間形成不包括氣泡之結合 層18。此操作完成塗佈膜之製程(塗佈膜之方法在上文 所描述的塗佈膜之製程中,需要在真空環境中執行至少使 物件10及膜12接觸液體黏附劑16的步驟及在此狀態下使液 體黏附劑凝固的步驟。 在於如上文所描述的塗佈膜之製程中將膜12穩固地附著 至物件10之第一表面10a的情況下’在所展示的研磨背表 面之方法中’自台20拾取物件1〇及膜12連同框架部件14, 將其顛倒’並將其以物件1〇之第二表面10b面向上方式置 放於另一靜止平台上。接著,使用諸如真空吸入器件之固 持構件,將物件10及膜12固定地支撐於框架部件14内部, 且將框架部件14保持為相對於物件1〇及膜12而固定。在此 狀態下,用一研磨裝置(未圖示)來研磨物件1〇之整個第二 表面i〇b以形成一平坦的機械加工表面26(圖8(f)) ^此操作 完成研磨背表面之製程(研磨背表面之方法)。 在所展示的形成半導.體晶片之方法中,實施研磨背表面 160620.doc 201246341 之製程(包括塗佈膜之製程),以便藉由研磨與電路侧相反 之背表面來均勻地減小晶圓之厚度。在形成半導體晶片之 此方法中’在晶圓(物件ίο)具有在研磨背表面之製程中藉 由研磨與電路側(第一表面10a)相反之背表面(第二表面 1 〇b)形成之機械加工表面26的情況下,沿預定切割線3 8切 割機械加工表面26(切塊)’以將晶圓(物件10)劃分成複數 個晶片40(圖8(g))。可藉由(例如)以下操作來一個接一個地 自膜12拾取經劃分晶片40中之每一者:使晶片與來自膜i 2 之背表面12b的未展示插腳碰撞,以便在結合層丨8與晶片 40之表面之間的邊界面中產生剝落。切割線3 8通常預先提 供於晶圓(物件10)之電路側(第一表面10a)上,且大體上難 以自機械加工表面26之側在視覺上辨識切割線38。因此, 在如上文所描述之切塊步驟中,有可能使用(例如)如在上 文所提及之日本未審查專利公開案(K〇kai)第2005-159155 號中所描述的具有影像辨識能力之切塊裝置,在榮幕影像 上辨識電路側(第一表面1 〇a)上之切割線3 8,以便準確地切 割機械加工表面26(切塊)。 關於具有如上文所描述之構造的根據圖8之實施例的塗 佈膜之方法、研磨背表面之方法及形成半導體晶片之方 法,可獲得與藉由參看圖3及圖4所描述的塗佈膜之方法、 研磨背表面之方法及形成半導體晶片之方法獲得的效應相 同的效應。 接下來,參看圖9,將描述根據再一實施例的塗佈膜之 方法、研磨背表面之方法及形成半導體晶片之方法。除了 160620.doc . 32160620.doc -29 S 201246341 Bottom In some cases, the flatness of the film 12 can be improved. A method of coating a film, a method of polishing a back surface, and a method of forming a semiconductor wafer according to still another embodiment of the present invention will be described hereinafter with reference to FIG. Except that the spin coating step is not included (in the spin coating step, in the case where both the first surface 1a and the surface 12a contact the liquid adhesive 丨6, the object 丨〇 and the film 12 are rotated) The method of display has the same construction as that described above with reference to Figures 3 and 4. Therefore, the description of the corresponding configuration will be omitted as appropriate. First, the following is provided (FIG. 1): an object 1〇 having a first surface 10a and a second surface 1〇b opposite to the first surface 1〇a: a flexible film 12 having a larger than A front surface 12a of a surface 1A; a frame member 14 having a shape and size that can be placed along the periphery 12c of the film 12 and having a rigidity higher than that of the film 12; and a liquid adhesive 16. Next, the article 10 is placed on the table 2 with the first surface 10a facing upward (Fig. 8(a)). Next, the liquid adhesive 16 is disposed on an area including the central axis 10d of the first surface 10a of the object ί (Fig. 8(b)). In this state, the article 10 is rotated about the central axis 10d to spread the liquid adhesive 16 over the entire first surface i〇a (Fig. g(c)). On the other hand, the frame member 14 is fixed to the film 12 along the periphery 12c. Next, the article 10 and the film 12 are disposed in a relative position, wherein the first surface 10a is opposite the front surface 12a and extends from the object 10 outwardly along an area of the film 12 of the perimeter 12c (and thus the frame member 14), and Both the first surface 1a and the front surface 12a contact the liquid adhesive 16 (Fig. 8(d)). Since the frame member 14 is uniformly fixed along the periphery 12c of the crucible 12, the central portion 12e of the film 12 inside the frame member 14 can be extended by the frame member μ maintaining the position 160620.doc -30-201246341 (ie, The non-twisted state is such that the first surface 10a of the object 1 and the front surface 12a of the film 12 can be disposed in substantially parallel relationship with each other to contact the liquid adhesive 16. Next, the liquid adhesive 16 is solidified and the first surface 10a of the article 10 is firmly attached to the film 12 (Fig. 8(e)). Since the liquid adhesive 16 has the material properties as described above, the liquid adhesive 16 can uniformly and smoothly fill the gap formed between the convex portions 11 formed on the first surface 1 〇a of the article 10, and can be A bonding layer 18 that does not include air bubbles is formed between the article 10 and the film 12. This operation completes the process of coating the film (method of coating the film in the process of coating film described above, the step of at least bringing the article 10 and the film 12 into contact with the liquid adhesive 16 in a vacuum environment and a step of solidifying the liquid adhesive in a state in which the film 12 is firmly adhered to the first surface 10a of the article 10 in the process of coating a film as described above, in the method of grinding the back surface as shown 'Picking the object 1 from the table 20 and the film 12 together with the frame member 14, turning it upside down' and placing it on the other stationary platform with the second surface 10b of the article 1 facing up. Then, using, for example, vacuum suction The holding member of the device fixedly supports the object 10 and the film 12 inside the frame member 14, and holds the frame member 14 fixed relative to the object 1 and the film 12. In this state, a grinding device is used (not shown) The entire second surface i〇b of the object 1 is polished to form a flat machined surface 26 (Fig. 8(f)). This operation completes the process of grinding the back surface (the method of grinding the back surface). Display formation In the method of guiding the bulk wafer, the process of polishing the back surface 160620.doc 201246341 (including the process of coating the film) is performed to uniformly reduce the thickness of the wafer by grinding the back surface opposite to the circuit side. In the method of semiconductor wafer, the processing of forming the back surface (the second surface 1 〇b) opposite to the circuit side (the first surface 10a) by polishing the wafer (the object ίο) in the process of polishing the back surface In the case of the surface 26, the machined surface 26 (diced) is cut along a predetermined cutting line 38 to divide the wafer (object 10) into a plurality of wafers 40 (Fig. 8(g)). The following operations pick up each of the divided wafers 40 from the film 12 one by one: colliding the wafer with the undisplayed pins from the back surface 12b of the film i2 so as to be on the surface of the bonding layer 8 and the wafer 40. Peeling occurs in the interfacial plane. The cutting line 38 is usually provided in advance on the circuit side (first surface 10a) of the wafer (object 10), and it is substantially difficult to visually recognize the cutting line from the side of the machined surface 26. 38. Therefore, as above In the dicing step, it is possible to use, for example, a dicing device having image recognition capability as described in Japanese Unexamined Patent Publication (KOKAI) No. 2005-159155. The cutting line 3 8 on the circuit side (first surface 1 〇 a) is identified on the image of the honor to accurately cut the machined surface 26 (cut). Regarding the implementation according to Fig. 8 having the configuration as described above The method of coating a film, the method of polishing the back surface, and the method of forming a semiconductor wafer, a method of coating a film by the methods described with reference to FIGS. 3 and 4, a method of polishing a back surface, and a method of forming a semiconductor wafer can be obtained. The effect obtained by the method is the same. Next, referring to Fig. 9, a method of coating a film, a method of polishing a back surface, and a method of forming a semiconductor wafer according to still another embodiment will be described. Except 160620.doc. 32
S 201246341 不包括旋塗步驟(在該旋塗步驟中,在第一表面l〇a與前表 面12a兩者接觸液體黏附劑16的情況下,使物件1〇及膜12 旋轉)之外,所展示之方法具有與上文參看圖3及圖4所描 述之方法相同的構造。因此,將適當地省略對應構造之描 述0 首先,k供以下各者(圖1): 一物件1〇,其具有第一表 面l〇a及與第一表面10a相反之第二表面1〇1>; 一可撓性膜 12,其具有大於第一表面10a之一前表面12a :一框架部件 14,其具有可沿膜12之周邊12c置放之形狀及大小,且具 有高於膜12之剛性的剛性;及一液體黏附劑】6。此處,物 件10在其第一表面1〇a上具有在預定位置處切割至厚度方 向中的線性溝槽42。接下來,將物件1〇以第一表面1〇&面 向上方式置放於台20上(圖9(a)) 〇接著,將液體黏附劑16 配置於一區域上,該區域包括物件1〇之第一表面之中 心軸線10d(圖9(b))。在此狀態下,使物件1〇圍繞中心軸線 i〇d旋轉,以將液體黏附劑16展佈於整個第一表面1(^上 (圖 9(c))。 叫〜王腺接 著,將物件10及膜12配置於一相對位置中,其中第一表面 1〇a與前表面12a相對且沿周邊⑸(因此,框架部件⑷的膜 12之一區域自物件10向外延伸’ i第一表面i〇a與前表面 !2a兩者接觸液體黏附劑16(圖9⑷)。由於框架部件心膜 12之周邊…而均句地固定’故可藉由框架部件14維二立 於框架部件14内部的膜12之中心區域以處於—延伸之狀 160620.docS 201246341 does not include a spin coating step (in the spin coating step, in the case where both the first surface 10a and the front surface 12a are in contact with the liquid adhesive 16, the object 1 and the film 12 are rotated) The method of display has the same construction as that described above with reference to Figures 3 and 4. Therefore, the description of the corresponding configuration will be omitted as appropriate. First, k is provided for the following (Fig. 1): an object 1 〇 having a first surface 10a and a second surface opposite the first surface 10a 1 〇 1 > A flexible film 12 having a front surface 12a that is larger than the first surface 10a: a frame member 14 having a shape and size that can be placed along the periphery 12c of the film 12 and having a higher film than the film 12 Rigid rigidity; and a liquid adhesive]6. Here, the article 10 has a linear groove 42 cut into a thickness direction at a predetermined position on its first surface 1A. Next, the object 1 is placed on the stage 20 with the first surface 1 〇 & face up (Fig. 9 (a)). Next, the liquid adhesive 16 is disposed on an area including the object 1 The central axis 10d of the first surface of the crucible (Fig. 9(b)). In this state, the object 1〇 is rotated about the central axis i〇d to spread the liquid adhesive 16 over the entire first surface 1 (Fig. 9(c)). 10 and the film 12 is disposed in a relative position, wherein the first surface 1A is opposed to the front surface 12a and along the periphery (5) (thus, an area of the film 12 of the frame member (4) extends outward from the object 10' i the first surface Both i〇a and the front surface! 2a are in contact with the liquid adhesive 16 (Fig. 9 (4)). Since the periphery of the frame member core film 12 is uniformly fixed, it can be erected inside the frame member 14 by the frame member 14 The central region of the membrane 12 is in the shape of - extending 160620.doc
S •33 201246341 態(亦即,無扭曲之狀態),以使得物件10之第一表面1〇&及 膜12之前表面12a可相對於彼此而以大體上平行配置接觸 液體黏附劑16。 接下來,使液體黏附劑16凝固且將物件1〇之第一表面 l〇a穩固地附著至膜12(圖9(e)”由於液體黏附劑16具有如 上文所描述之材料性質,所以液體黏附劑16可均勻地且平 滑地填充形成於物件1〇之第一表面l〇a上的凸面部分丨丨之 間的間隙,且可在物件10與膜12之間形成不包括氣泡之結 合層18»此操作完成塗佈膜之製程(塗佈膜之方法在上 文所描述之塗佈膜之製程中,需要在真空環境中執行至少 使物件10及膜12接觸液體黏附劑16的步驟及在此狀態下使 液體黏附劑凝固的步驟。 在於如上文所描述的塗佈膜之製程中將膜12穩固地附著 至物件10之第一表面l〇a的情況下,在所展示的研磨背表 面之方法中,自台20拾取物件10及膜j2連同框架部件14, 將其顛倒,並將其以物件10之第二表面1〇b面向上方式置 放於另一靜止平台上。接著,使用諸如真空吸入器件之固 持構件,將物件10及膜12固定地支撐於框架部件14内部, 且將框架部件14保持為相對於物件1〇及膜12而固定。在此 狀態下,用一研磨裝置(未圖示)來研磨物件1〇之整個第二 表面i〇b以形成一平坦的機械加工表面26(圖9(f))。此操作 完成研磨背表面之製程(研磨背表面之方法 在所展示的形成半導體晶片之方法中,實施研磨背表面 之製程(包括塗佈膜之製程),以便藉由研磨與電路側相反 160620.docThe S:33 201246341 state (i.e., the state without distortion) is such that the first surface 1&> of the article 10 and the front surface 12a of the film 12 are contactable with the liquid adhesive 16 in a substantially parallel configuration relative to each other. Next, the liquid adhesive 16 is solidified and the first surface 10a of the article 1 is firmly attached to the film 12 (Fig. 9(e)". Since the liquid adhesive 16 has the material properties as described above, the liquid The adhesive 16 can uniformly and smoothly fill the gap between the convex portions 丨丨 formed on the first surface 10a of the object 1〇, and can form a bonding layer between the object 10 and the film 12 without including bubbles. 18»This operation completes the process of coating the film (method of coating the film in the process of coating film described above, the step of bringing the object 10 and the film 12 into contact with the liquid adhesive 16 in a vacuum environment and The step of solidifying the liquid adhesive in this state is in the case where the film 12 is firmly attached to the first surface 10a of the article 10 in the process of coating the film as described above, in the polished back shown In the method of the surface, the object 10 and the film j2 are picked up from the table 20 together with the frame member 14, reversed, and placed on the other stationary platform with the second surface 1b of the object 10 facing up. Then, Use of a holding structure such as a vacuum inhalation device The article 10 and the film 12 are fixedly supported inside the frame member 14, and the frame member 14 is held fixed relative to the object 1 and the film 12. In this state, it is ground by a polishing device (not shown). The entire second surface i〇b of the object 1〇 forms a flat machined surface 26 (Fig. 9(f)). This operation completes the process of grinding the back surface (the method of grinding the back surface is shown in the semiconductor wafer formation shown) In the method, the process of grinding the back surface (including the process of coating the film) is performed so as to be opposite to the circuit side by grinding 160620.doc
S •34· 201246341 之背表面來均勻地減小晶圓之厚度。在形成半導體晶片之 此方法中,研磨與晶圓(物件10)之電路側(第一表面1〇叻相 反的背表面(第二表面10b)直至到達提供於晶圓(物件1〇)之 電路側(第—表面1Ga)上的線性溝槽42為止以形成機械加 工表面26。可藉此將晶圓(物件1〇)劃分成複數個晶片4〇(圖 9(f))。可藉由(例如)以下操作來一個接一個地自膜12拾取 經劃分晶片40中之每一者:使晶片與來自膜12之背表面 12b的未展示插腳碰撞,以便在結合層18與晶片4〇之表面 之間的邊界面中產生剝落。 關於具有如上文所描述之構造的根據圖9之實施例的塗 佈膜之方法、研磨背表面之方法及形成半導體晶片之方 法,可獲得與藉由參看圖3及圖4所描述的塗佈膜之方法、 研磨背表面之方法及形成半導體晶片之方法獲得的效應相 同的效應。 在圖8及圖9中所展示的塗佈膜之方法、研磨背表面之方 法及形成半導體晶片之方法中,對於在液體黏附劑16配置 於物件10之第一表面l〇a上的情況下使物件10旋轉以將液 體黏附劑16展佈於整個第一表面i〇a上(圖8(c)、圖的 步驟’代替使物件10旋轉或除使物件1 〇旋轉之外,亦可使 物件10振動以將液體黏附劑16展佈於第一表面1〇&上。圖 10展示用於置放黏附劑之一裝置之實例,該裝置可將此振 動強加於物件10上。 所展示的用於置放黏附劑之裝置包含:一台44,物件10 可固定地置放於台44上;及一連接至台44之馬達46。一偏 160620.doc -35- 201246341 心錘50安裝於馬達46之旋轉功率輸出轴48上,以便與物件 10之中心轴線l〇d同軸旋轉。台44及馬達46經由彈簧52而 支撐於靜止平台54上。當起動馬達46時,偏心鐘50偏心地 旋轉’且伴隨台44及馬達46之振動及因此的置放於台44上 之物件10的振動。藉由將由旋轉誘導之振動強加於物件1〇 上’可快速地將液體黏附劑16展佈於物件1〇之整個第一表 面10a上。 在本發明之再一態樣中’下文將參看圖η來描述根據一 實施例之塗佈膜之方法’該方法並不使用框架部件14。除 了不使用框架部件14之外,塗佈膜之此方法具有與上文參 看圖3及圖4以及圖7(b)所描述之方法相同的構造。因此, 將適當地省略對應構造之描述。 在塗佈膜之此方法中’首先,提供以下各者:一物件 10,其具有第一表面l〇a及與第一表面相反之第二表面; 一可撓性膜12及一液體黏附劑16。接下來,將物件1〇以第 一表面10a面向上方式置放於台2〇上。接著,將物件1〇及 膜12配置於相對位置中,其中第一表面1〇&與前表面i2a相 對,且第一表面l〇a與前表面12a兩者接觸液體黏附劑16。 在此狀態下,當使用膜支撐部分34相對於物件1〇來固定地 支撲膜12時’物件1〇與臈12以同軸配置旋轉,以將液體黏 附劑16展佈於第-表面1()&與前表面⑵之^最後,使液 體黏附劑凝固,以將膜12穩固地附著至物件ig之第一表面 10a。 在圖11中所展不的塗报%, 置怖膜之方法中,如在圖7(b)中所展 祕20doC -36-The back surface of S • 34· 201246341 to evenly reduce the thickness of the wafer. In this method of forming a semiconductor wafer, the back side (the second surface 10b) opposite to the circuit side (the first surface 1) of the wafer (object 10) is polished until reaching the circuit provided for the wafer (object 1) The linear groove 42 on the side (the first surface 1Ga) is formed to form the machined surface 26. The wafer (object 1) can be divided into a plurality of wafers 4 (Fig. 9(f)). The following operations, for example, pick up each of the divided wafers 40 from the film 12 one by one: colliding the wafer with the undisplayed pins from the back surface 12b of the film 12 for bonding between the bonding layer 18 and the wafer 4. Peeling occurs in the boundary surface between the surfaces. The method of coating a film according to the embodiment of Fig. 9 having the configuration as described above, the method of polishing the back surface, and the method of forming the semiconductor wafer are available and can be seen by reference The effects of the method of coating a film, the method of polishing the back surface, and the method of forming a semiconductor wafer described in Figures 3 and 4 are the same. The method of coating a film, the polishing back shown in Figures 8 and 9 Surface method and formation of semi-conductive In the method of wafer, the object 10 is rotated to spread the liquid adhesive 16 over the entire first surface i〇a with the liquid adhesive 16 disposed on the first surface 10a of the article 10 (Fig. 8). (c), the step of the figure 'instead of rotating the object 10 or in addition to rotating the object 1 ,, the object 10 may also be vibrated to spread the liquid adhesive 16 on the first surface 1 〇 & An example of a device for placing an adhesive that can apply this vibration to the article 10. The device for placing an adhesive comprises: a 44, the article 10 can be fixedly placed on the table 44; and a motor 46 connected to the table 44. A bias 160620.doc -35- 201246341 The hammer 50 is mounted on the rotary power output shaft 48 of the motor 46 for coaxial rotation with the central axis l〇d of the object 10. The table 44 and the motor 46 are supported on the stationary platform 54 via the spring 52. When the motor 46 is started, the eccentric clock 50 is eccentrically rotated 'with the vibration of the table 44 and the motor 46 and thus the objects placed on the table 44 10 vibrations by imposing a vibration induced by rotation on the object 1' The liquid adhesive 16 is rapidly spread over the entire first surface 10a of the article 1 . In still another aspect of the present invention, a method of coating a film according to an embodiment will be described hereinafter with reference to FIG. The method does not use the frame member 14. This method of coating the film has the same configuration as that described above with reference to Figures 3 and 4 and Figure 7(b), except that the frame member 14 is not used. The description of the corresponding configuration is omitted as appropriate. In the method of coating a film, 'firstly, the following is provided: an object 10 having a first surface 10a and a second surface opposite to the first surface; The film 12 and a liquid adhesive 16 are used. Next, the object 1 is placed on the table 2 with the first surface 10a facing up. Next, the article 1 and the film 12 are disposed in opposite positions, wherein the first surface 1 & is opposite the front surface i2a, and both the first surface 10a and the front surface 12a are in contact with the liquid adhesive 16. In this state, when the film supporting portion 34 is used to fix the film 12 with respect to the object 1 ', the object 1 〇 and the 臈 12 are rotated in a coaxial configuration to spread the liquid adhesive 16 on the first surface 1 () & and the front surface (2) finally, the liquid adhesive is solidified to firmly adhere the film 12 to the first surface 10a of the object ig. In the method of displaying the mask in Figure 11, the method of placing the membrane, as shown in Figure 7(b), 20doC -36-
S 201246341 示之方法中’膜支撐部分34可經建構以使得,在將膜12支 禮於支揮平台上時,膜支撐部分34防止來自膜12之壓力 (歸因於其自身重量)被施加至物件10,或膜支撐部分34故 意地將來自膜12之壓力施加至物件10,或膜支撐部分34將 膜12抬高遠離物件丨0。臈支撐部分34可經建構,以便與台 20同步旋轉’或以便故意地與台2〇不同步地旋轉。另外, 由於未使用如圖7(b)中所展示之框架支撐部分28,故膜支 擇部分可經建構’以便將藉由台2〇而旋轉之物件1〇的旋轉 傳輸至膜12(歸因於液體黏附劑16之黏度)’且因此,導致 膜12旋轉。在任何構造中,在將液體黏附劑16***至物件 1〇的情況下,在一些狀況下,可改良膜丨2之平坦度。 關於具有如上文所描述之構造的根據圖丨丨之實施例的塗 佈膜之方法,可獲得與藉由參看圖3及圖4所描述的塗佈膜 之方法獲得的效應相同的效應。亦在塗佈膜之上述方法 中,在使物件ίο之第一表面10a與膜12之前表面12a兩者接 觸液體黏附劑16之前,可使用圖10中所展示的塗佈黏附劑 之裝置來使物件10振動,以將液體黏附劑16展佈於整個第 一表面1〇3上。 【圖式簡單說明】 圖1為用於解釋根據本發明之一實施例的塗佈膜之方法 的視圖’該圖以透視圖示意性地展示在塗佈膜之前的其組 件。 圖2為展示在塗佈膜之後的圖丨中所展示之組件的透視 圖。In the method of S 201246341, the membrane support portion 34 can be constructed such that when the membrane 12 is supported on the support platform, the membrane support portion 34 prevents the pressure from the membrane 12 (due to its own weight) from being applied. To the article 10, or the membrane support portion 34, deliberately applies pressure from the membrane 12 to the article 10, or the membrane support portion 34 lifts the membrane 12 away from the object 丨0. The ankle support portion 34 can be constructed to rotate in synchronization with the table 20 or to deliberately rotate asynchronously with the table 2 . In addition, since the frame supporting portion 28 as shown in Fig. 7(b) is not used, the film supporting portion can be constructed to transmit the rotation of the object 1〇 rotated by the table 2 to the film 12 ( Due to the viscosity of the liquid adhesive 16), and thus, the film 12 is caused to rotate. In any configuration, in the case where the liquid adhesive 16 is inserted into the article 1 , the flatness of the film 2 can be improved under some conditions. With regard to the method of coating a film according to the embodiment of Fig. 3 having the configuration as described above, the same effect as that obtained by the method of coating a film described with reference to Figs. 3 and 4 can be obtained. Also in the above method of coating a film, before the first surface 10a of the article ίο and the front surface 12a of the film 12 are brought into contact with the liquid adhesive 16, the device for applying the adhesive shown in Fig. 10 can be used to make The article 10 vibrates to spread the liquid adhesive 16 over the entire first surface 1〇3. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view for explaining a method of coating a film according to an embodiment of the present invention. This figure schematically shows a component thereof before a coating film in a perspective view. Figure 2 is a perspective view showing the assembly shown in the figure after coating the film.
I60620.doc •37· S 201246341 圖3(a)至圖3(c)為剖視圖,其展示圖1及圖2中所展示之 組件’連同根據本發明之一實施例的研磨背表面之方法的 主要步驟。 圖4(a)至圖4(f)為展示根據本發明之一實施例的塗佈膜 之方法之主要步驟的示意圖。 圖5(a)至圖5(c)為展示根據本發明之另一實施例的塗佈 膜之方法之主要步驟的剖視圖。 圖6(a)至圖6(b)為剖視圖,其展示該等組件以展示根據 本發明之再一實施例的塗佈膜之方法及研磨背表面之方法 的主要步驟。 圖7(a)至圖7(b)為示意性地展示旋塗步驟之實例的剖視 圖,該旋塗步驟可用於圖4中所展示之塗佈膜之方法中。 圖8(a)至圖8(g)為剖視圖,其示意性地展示根據本發明 之再一實施例的塗佈膜之方法、研磨背表面之方法及形成 半導體晶片之方法的主要步驟。 圖9(a)至圖9(f)為剖視圖,其示意性地展示根據本發明 之又-實施例的塗佈膜之方法、研磨背表面之方法及形成 半導體晶片之方法的主要步驟。 圖10為示意性地展示一用於置放黏附劑之裝置之實例的 剖視圖’該裝置可用於根據本發明之—實施例的塗佈膜之 方法中。 圖11為示意性地展示旋塗步驟之實例的剖視圖,該旋塗 步驟可用於根據本發明之一實施例的塗佈膜之方法中。 【主要元件符號說明】 160620.docI60620.doc • 37· S 201246341 FIGS. 3( a ) to 3 ( c ) are cross-sectional views showing the assembly of FIGS. 1 and 2 together with the method of grinding the back surface according to an embodiment of the present invention. The main steps. 4(a) to 4(f) are schematic views showing main steps of a method of coating a film according to an embodiment of the present invention. 5(a) to 5(c) are cross-sectional views showing main steps of a method of coating a film according to another embodiment of the present invention. 6(a) through 6(b) are cross-sectional views showing the components to demonstrate the method of coating a film according to still another embodiment of the present invention and the main steps of the method of polishing the back surface. 7(a) to 7(b) are cross-sectional views schematically showing an example of a spin coating step which can be used in the method of coating a film shown in Fig. 4. 8(a) to 8(g) are cross-sectional views schematically showing main steps of a method of coating a film, a method of polishing a back surface, and a method of forming a semiconductor wafer according to still another embodiment of the present invention. 9(a) to 9(f) are cross-sectional views schematically showing main steps of a method of coating a film, a method of polishing a back surface, and a method of forming a semiconductor wafer according to still another embodiment of the present invention. Fig. 10 is a cross-sectional view schematically showing an example of a device for placing an adhesive agent. The device can be used in a method of coating a film according to an embodiment of the present invention. Fig. 11 is a cross-sectional view schematically showing an example of a spin coating step which can be used in a method of coating a film according to an embodiment of the present invention. [Main component symbol description] 160620.doc
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S 201246341 10 物件 10a 第一表面 10b 第二表面 10c 外圓周 lOd 中心軸線 11 凸面部分 12 可撓性膜 12a 前表面 12b 背表面 12c 周邊 12d 中心軸線 12e 中心區域 14 框架部件 14a 第一表面 14b 第二表面 14c 内圓周 14d 外圓周 14e 中心軸線 16 液體黏附劑 18 結合層 20 台 22 結合層 24 靜止平台 26 平坦的機械 160620.doc -39- 201246341 28 框架支撐部分 30 支撐平台 32 環狀壁部分 34 膜支撐部分 36 支撐平台 38 預定切割線 40 晶片 42 線性溝槽 44 台 46 馬達 48 旋轉功率輸出軸 5 0 偏心鐘 52 黏附帶/彈簧 54 雷射光/靜止平台S 201246341 10 Object 10a First surface 10b Second surface 10c External circumference 10d Central axis 11 Convex portion 12 Flexible film 12a Front surface 12b Back surface 12c Periphery 12d Center axis 12e Center area 14 Frame part 14a First surface 14b Second Surface 14c Inner circumference 14d Outer circumference 14e Center axis 16 Liquid adhesive 18 Bonding layer 20 Table 22 Bonding layer 24 Stationary platform 26 Flat machine 160620.doc -39- 201246341 28 Frame support portion 30 Support platform 32 Annular wall portion 34 Membrane Support portion 36 support platform 38 predetermined cutting line 40 wafer 42 linear groove 44 table 46 motor 48 rotary power output shaft 5 0 eccentric clock 52 adhesive attachment / spring 54 laser light / stationary platform
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JP2010271893A JP5882577B2 (en) | 2010-12-06 | 2010-12-06 | Film sticking method, back grinding method, semiconductor chip manufacturing method, and film sticking apparatus |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9881783B2 (en) | 2013-02-19 | 2018-01-30 | Sumco Corporation | Method for processing semiconductor wafer |
CN110211913A (en) * | 2019-05-29 | 2019-09-06 | 浙江荷清柔性电子技术有限公司 | A kind of manufacturing method of flexible chip |
Families Citing this family (3)
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JP6149223B2 (en) * | 2013-04-18 | 2017-06-21 | 株式会社ディスコ | How to stick a plate |
JP6322472B2 (en) * | 2014-05-01 | 2018-05-09 | スリーエム イノベイティブ プロパティズ カンパニー | Sheet sticking method, sheet sticking apparatus and wafer processing method |
JP2023046922A (en) * | 2021-09-24 | 2023-04-05 | 株式会社ディスコ | Processing method for plate-shaped object |
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JP3602943B2 (en) * | 1997-07-25 | 2004-12-15 | シャープ株式会社 | Semiconductor wafer grinding machine |
JPH1153778A (en) * | 1997-08-07 | 1999-02-26 | Matsushita Electric Ind Co Ltd | Production of optical disk device and apparatus for producing the same |
JP2005191535A (en) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | Sticking device and sticking method |
JP4485248B2 (en) * | 2004-04-28 | 2010-06-16 | リンテック株式会社 | Peeling apparatus and peeling method |
KR100843217B1 (en) * | 2006-12-15 | 2008-07-02 | 삼성전자주식회사 | In-line system for manufacturing semiconductor packages using application of liquid adhesive onto backside of wafer |
JP2009147201A (en) * | 2007-12-17 | 2009-07-02 | Denki Kagaku Kogyo Kk | Dicing sheet and method of manufacturing the same, and method of manufacturing electronic component |
JP2009231699A (en) * | 2008-03-25 | 2009-10-08 | Furukawa Electric Co Ltd:The | Wafer processing tape |
TWM359789U (en) * | 2008-07-21 | 2009-06-21 | Beautrong Prec Mechtronics Co Ltd | A blue membrane expansion device |
JP5492445B2 (en) * | 2009-04-23 | 2014-05-14 | 株式会社ディスコ | Wafer dividing method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9881783B2 (en) | 2013-02-19 | 2018-01-30 | Sumco Corporation | Method for processing semiconductor wafer |
CN110211913A (en) * | 2019-05-29 | 2019-09-06 | 浙江荷清柔性电子技术有限公司 | A kind of manufacturing method of flexible chip |
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WO2012078419A3 (en) | 2012-08-02 |
TWI564949B (en) | 2017-01-01 |
WO2012078419A2 (en) | 2012-06-14 |
JP2012124230A (en) | 2012-06-28 |
JP5882577B2 (en) | 2016-03-09 |
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