TW201241142A - Dicing and die-bonding film - Google Patents
Dicing and die-bonding film Download PDFInfo
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- TW201241142A TW201241142A TW101114556A TW101114556A TW201241142A TW 201241142 A TW201241142 A TW 201241142A TW 101114556 A TW101114556 A TW 101114556A TW 101114556 A TW101114556 A TW 101114556A TW 201241142 A TW201241142 A TW 201241142A
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- dicing
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Description
201241142 32207—D pif 六、發明說明: 【發明所屬之技術領域】 本發明是關於一種切割、黏晶膜的製造方法,以及由 該方法獲得的切割、黏晶膜’該切割、黏晶膜的製造方法 是將用以使晶片狀工件(半導體晶圓等)與電極構件固著 的接著劑,以在切割前附設於工件(半導體晶圓等)的狀 態下供於工件的切割。 【先前技術】 形成電路圖案的半導體晶圓(工件)視需要藉由背面 研磨而調整厚度後,切割成半導體晶片(晶片狀工件)(切 割步驟)。接著,利用接著劑將上述半導體晶片固著於導線 架(lead frame)等被黏接體(安裝(m〇un〇步驟)後, 移至焊接(bonding)步驟。於上述安裝步驟中,將接著劑 塗佈於導線架或半導體晶片上。然而,該方法難以使接著 劑層均勻化,而且接著劑塗佈時必需特殊裝置或較長時 間。因此,提出有一種於切割步驟中將半導體晶圓接著保 持,並且亦賦予安裝步驟所必需的晶片固著用接著劑層的 切割、黏晶膜(例如,參照專利文獻i )。 專利文獻1中記載的切割、黏晶膜是於支持基材上以 可剝離的方式設置接著劑層而成。即,於利用接著劑層的 保持狀態下將半導體晶圓切割後,使支持基材延伸,將半 導體晶片與接著劑層一起剝離,然後將半導體晶片與接著 沖J層分別回收,從而經由該接著劑層而固著於導線架等被 黏接體上。 4 201241142 32207_D pif 為了不產生無法切割或尺寸誤差(miss)等情況,而 期望此種切割、黏晶膜的接著劑層具有對半導體晶圓的良 好保持力、與可將切織的半導體晶片與接著劑層一體^ 自支持基材上剝離的良好剝離性。然而,使該兩種特性平 ,决非易事。尤其,於如利用旋轉圓刀等來切割半導體晶 圓^方式等’對接著㈣要求較大的保持力的情況,難以 獲得滿足上述特性的切割、黏晶膜。 因此,為了克服此種問題,提出有各種改良法(例如, 二照專利文獻2)。於專敎獻2巾糾有如下方法:於支 馬基材與接著劑層之間插人可進行紫外線硬化的黏著劑 日將其蝴後進行紫外線硬化,崎健著劑層與接著 刮曰之間的接著力,然後藉由兩者間的剝離而容易地拾取 (Pickup)半導體晶片。 然而’隨著半導體晶圓的大型化或薄型化,先前的切 ^黏晶臈難以同時狀切割時所必需的高接著性、與拾 =所^的_性’難以自切割膠帶上剝離附接著劑的 體晶片。結果存在因拾取不良或晶片變形致破 的問題。 另外’根據蝴、黏晶膜的鶴,亦有具備紫外線硬 &切轉帶的_、減膜。於該紫外線硬化型切割朦 :if况’有與黏著劑層中的未硬化樹脂進行反應,造成 ^力隨Ϊ間經過而增大的切割、黏晶膜。該情況下,難 丄附接著綱半導體晶#自_膠帶上拾取,無法剝離 除去而導致廢#。結果生錢切大,料良率下降。 201241142 32207_D pif 而且,控制黏著劑層與接著劑層之間的接著性以及剝 離性的平衡的方法,.例如亦可列舉於接著劑層中調配無機 填充劑,對該無機填充劑的調配量進行適當調節的方法。 然無機填充劑的最佳調配量會根據無機填充劑的凝聚 „度分布等而發生變化。因此,通常是根據所使用 的…、機填充劑的性狀’預先在實驗室中決定黏合劑的最佳 5周配比例’然後試行工業規模的應用。然而 模下操作容量不同,而且少量評價時亦產Li ^題。結果在^規模下的製造時,即便使粒度 =己條定而進行塗佈,填料的批次⑽中或根據 你批:人,接讀層絲面婦度亦不均勻,拾取性下降。 變更接著_形成日杨接著触成物溶液的塗 ^件、或接著·與黏著劑層的貼合條件等,會產生製 造步驟上的各種阻礙,導致繁雜度增大。 製 [先前技術文獻] 1:日本專利特開昭6〇·57642號公報 曰本專利特開平2-248064號公報 晶膜,該切割、黏晶膜的製二 刺離性優異的驟時的接著性與拾取步驟時的 本申4案發明者等為了解決上述先前的問題’而對切 6 201241142 32207_D pif 割、黏晶膜的製造方法以及由該方法獲得的切割 進行研究。結果發現,藉衫僅控難著_ : ^ 無機填充劑的調配量’並且亦控制兩者的接觸面積了則: ,於在工業規模下製造時,亦可使輯劑層與接! 間的黏著性以及剝離性良好而製造切割、黏晶臈,從^ 成本發明。 元 、即,為了解決上述課題,本發明的切割、黏晶膜 仏方法疋製造於基材上依次制有黏著綱以著劑 ^割、黏晶膜;且上述製造方法包括以下步驟:於= 膜上形成^錢填_、算料均粗财Ra為⑽5 表面λγ狀的上述接著劑層;叹‘ 度為30C〜50C、壓力為αι廳〜〇 6聰的 ^設置於上述基材上的黏著劑層與上述接著劑層進行貼 δ ’且使轉綱與接㈣|層的細 稽 而為35%〜9G%的範圍。 °面積 據上述方法,藉由形絲面為凹凸狀,且算術平均 ,度為卿〜贼、壓力為aiMPa〜〇6M^、^ 下,將該接著劑層與黏著劑層進行貼合, ,島狀接觸狀態下,使黏著劑層與接著劑層 夕卜藉由使上述接著劑層與黏著劑層的接觸面積相對於 而為小於等於9〇%’可防止上述接著劑層與黏著劑 層的接觸_變大而造絲著性過度變大,從而防止拾取 性下降n®,II由使接觸面積為大於等於35%,可 7 201241142 32207—D pif 防止上述接著劑層與黏著劑層的接觸面積 性過度變大,從而防止切割時產生半導體晶片的^飛散。 為良ί的切割、黏晶膜。而且,與藉由調節無機2 刎的调配罝來控制黏著劑層與接著劑層之間的接著性以 剝離性的情況相比較,於在工單規模 ;:可=接麵形成時的4:下:物=塗: 牛或”黏者劑層貼合的條件等的大幅設-可降低製造步驟上的繁雜度。 交文…果, 於上述方法中,形成上述接著劑層 括以下步驟:於上述脫_上塗佈包含上述=== 接著劑組成物減㈣制;以及於絲真 〜160C、乾燥時間為i分鐘〜5分鐘的條件下^ :層:附風量為5 m/min〜2〇 m/min的乾::^ ㈣此,可形成與黏著劑層的貼合面 平均_度〜為_5㈣〜1㈣的接著劑層。异術 對於’上述無機填充劑的調配量較好的是相 樹脂成分100重量份而為2〇重量 伤80重里伤。藉由相對於接著劑層的有機 機填充劑的調酉己量為大於等於“,可 防止耐熱性下降,即使於長時間暴 (thermal history) *的情況,亦可防“皿”、、歷程 且防止接著綱⑽祕絲續獨。^面的硬= 8 201241142 32207_Dpif 使無機填充劑的調配量為小於等於80重量份,可防止接著 =的拉伸彈性模數過度變高,已硬化的接著劑難以應力 '’爰和’利用岔封樹脂進行半導體元件的密封步驟時,亦可 防止對貼合面上的凹凸的嵌入性下降。 尸於上述方法♦,上述無機填充劑較好的是使用平均粒 徑為j.l 〜5 的無機填充劑。若無機填充劑的平 均粒控小於(U _,則難以使上述接著_的算術 粗糙度Ra為大於等於〇.〇15 _。另一方面,若上述平均 粒徑超過5 ,則難以使Ra小於i以瓜。 時上述塗佈層的乾燥較好的是隨著乾燥 二Si?乾燥溫度階段性地上升而進行。若為使乾 组成:、:“升的乾燥方法,則可防止在剛塗佈黏著劑 成物浴液後’於塗佈層表面產生針孔(pinhole)。 黏㈣層的算術平均她度Ra在與·^接著劑 層貼Μ ’較好的是0.015㈣〜〇 5 _的範圍。 於決上述課題’本發明的切割、黏晶膜為 =3=含無機填充劑、與上述嶋 口二的貼合面為凹凸狀、且算術平均婦度⑹為⑽ M。/ 2 ’上賴合面的朗®積相料貼合面積而為 350/。〜900/。的範圍。 口 w顸叩与 於上述構成中,接著劑層的與 凹凸狀,因此藉由使該接著劑層與該黏著 多點接觸或海島狀接觸狀態下進行接著。:心 201241142 32207_D pif ίHr占合面中’使該接著劑層的算術平均粗糙度Ra 於貼合面:Γ:9〇Γ與黏著劑層啊 奸於^為 的範圍内。若為此種構成,則 二:半驟ΐ劑層與接著劑層之間,切割步驟時的黏著性與 σ 乂"時的剝離性的平衡優異的切割、黏晶膜。、 料上述構成中,上述無機填充劑的調配量較好的是相 述接著劑層中的有機樹脂成分1GG重量份而為2〇 、里伤-^〇重量份。藉由使無機填充劑的調配量為大於等 =20重量份’可防止耐熱性下降,即使於長時間暴露於高 溫熱歷程巾的情況,亦可防止接著㈣硬化,防止接著劑 層的流,性或嵌人性下降。另―方面,藉由使無機填充劑 的°周配1為小於等於8G重1:份’可防止接著劑層的拉伸彈 性模數過度變高’已硬化的接著劑難以應力緩和,即使於 利用密封樹脂進行半導體元件的密封步驟時,亦可防止對 貼合面上的凹凸的嵌入性下降。 於上述構成中’上述無機填充劑較好的是使用平均粒 技為0.1 /zm〜5 的無機填充劑。若無機填充劑的平 均粒徑小於〇·1 ym,則難以使上述接著劑層的算術平均 粗链度Ra為大於等於〇 015 am。另一方面,若上述平均 粒徑超過5 #m’則難以使Ra小於1 μπι。 上述黏著劑層的算術平均粗糙度Ra在與上述接著劑 層貼合前,較好的是O.OU 〜0.5 的範圍。 【實施方式】 (切割、黏晶膜的製造方法) 201241142 32207—D pif 以下’以基材上依次積層有黏著劑層以及接著劑層的 切割、黏晶膜為例,對本實施形態的切割、黏晶膜的製造 方法進行說明。 首先,本實施形態的切割、黏晶膜的製造方法至少包 括以下步驟:於脫模膜上形成接著劑層;以及將設置於基 材上的黏著劑層與接著劑層貼合。 上述形成接著劑層的步驟,例如可列舉如下方法:進 行於脫模膜上塗佈包含無機填充劑的接著劑組成物溶液 (詳細情況如下文所述)而形成塗佈層的步驟,然後進行 使上述塗佈層乾燥的步驟。 上述接著劑組成物溶液的塗佈方法並無特別限定,例 如可列舉使用刮刀式塗佈法(c〇mma coat method)、喷注 法(fountain method )、凹版法(gravure method )等進行塗 佈的方法。塗佈厚度可適當設定以使將塗佈層乾燥而最終 獲得的接著劑層的厚度成為5 //m〜100 //m的範圍内。 此外’接著劑組成物溶液的黏度並無特別限定,較好的是 400 mPa_s〜2500 mPa,s,更好的是 800 mPa.s〜2000 mPa. S 0 上述脫模膜並無特別限定,可使用先前公知的脫模 膜。具體而言,例如可列舉於脫模膜的基材的與接著劑層 的貼合面上形成有聚矽氧層等脫模塗佈層的脫模膜。另 外’脫模膜的基材例如可列舉如玻璃紙(glassine paper ) 之類的紙材料,或由聚乙烯、聚丙烯、聚酯等構成的樹脂 膜。 201241142 32207_D pif —上述塗佈層的乾燥是藉由對塗佈層吹附 =J乾燥風的吹附,例如可列舉以使乾燥吹= 與脫模膜的搬送方向平行的方式進行的方法,或 風的吹附方向與塗佈層的表面垂直的方式進行的方、 二量並無特別限定,通常為5— ^5η^1η〜15m/mm。藉由使乾燥風的風量為大 ' m mm,可防止塗佈層的乾燥變得不充分。另 、 表面附近的有機溶劑(詳細情況如下文所 ^的
因此可使有機_均勻地祕均勻。結果可形^表=勾’ 於面内均勻的接著劑層。 狀L -4乞燥據接著·成物溶液的塗佈厚度而適 二 '疋通吊為!分鐘〜5分鐘的範圍内, 適 ί:4分鐘的範圍内。若乾燥時間小於!分鐘,‘化: =分進行,未反應的硬化成分或殘存的 藉此有於後續步驟產生脫氣或空隙的問題的情況。另Ϊ方 ^若乾燥時間超過5分鐘,則硬化反應過度進行,4 有&動性或對被黏接體的嵌入性下降的情況。 、,,。果 J燥Γί並無特別限定’通常設定在,C〜靴的 :本發明中,較好的是隨著乾_^^ 過,使乾爍溫度階段性地上升而進 且 、· 乾燥初期(_職至小轉於丨; t的範圍内,於乾雜期(她分鐘且小 設定在成靴〜_的範圍内。藉此,可防止產生t剛 201241142 32207—D pif :佈溫度急遽上升時所產生的塗佈層表面的針 孔;果可,成表面為凹凸狀且算術平均粗糙度為 0·015 〜1 的接著劑層。 、隹-上目^者與料綱_合步較藉由璧接而 進灯。貼&溫度為3叱〜观,較好的是抑〜饥。另 外,貼合壓力為(U MPa〜〇·6 Mpa,較好的是Μ廳〜 0:5論。糟由於該些壓接條件下將黏著綱與接著劑層進 行貼&彳使上述黏著劑層與接著劑層於 料 狀接觸«下接著,且,可使接觸面積相對於貼 35%〜90%的範㈣。 —一另外,上述綱©積的值是藉輯拍題得的圖像進 行值化(binarize )的圖像分析(image analysis )而獲得。 用以進行上述®像分析關像處理裝置,若為可對拍攝的 ,淡圖像進行三值化處理的圖像處理裝置,則無特別限 定’可使用先前公知的所有圖像處理裝置。具體而言,例 ^、’由於對類似的圖像進行連續檢查地情況較多,故對於 最初圖像(任意圖像)’分析者一面觀察晝面一面設定臨限 值,而對於其他圖像,是根據在最初圖像中設定的臨限值 來"又疋其他圖像的臨限值。圖像信號的二值化可使用市售 的圖像分析軟體來進行。例如可列舉:三谷商事股份有限 公司製造的WinROOF (註冊商標)、Ad〇be Systems股份 有限公司製造的AdobePhotoshop(註冊商標)、NanoSyStem 股份有限公司製造的NanoHunter NS2K-Pro (註冊商標) 等。 13 201241142 32207一D pif 上述脫模膜可於黏著劑層與接著劑層貼合後進行剝 離,或者可直接用作切割、黏晶膜的保護膜,於與半導體 晶圓等貼合時剝離。藉此,可製造本實施形態的切割、黏 晶膜。 另外,對在基材上形成黏著劑層的方法(即,切割膜 的形成方法)並無特別限定,可採用先前公知的各種方法。 具體而言如下文所述。 首先,上述基材可利用先前公知的製膜方法進行製 膜。該製膜方法例如可例示:砑光機(calender)製膜法、 有機溶劑中的澆鑄(casting)法、密閉系統中的吹塑 (mflation)擠出法、T模擠出法、共擠出法、乾式層壓(dry laminate)法等。 其次,上述黏著劑層可藉由於基材上塗佈黏著劑組成 物溶液後’❹_定條件下進行絲(視需要進行加献 交聯)而形成。塗佈方法並無_限定,例如可列舉:親 塗佈(roll coating)、網版塗佈(screenc〇ating)、凹版塗佈 (gravure coating )等。 塗佈時的塗佈厚度可適當設定以使將塗佈層乾燥而 最終獲得的黏Ϊ材層的厚度成為1 _〜5G㈣的範圍 内。此外,黏著材溶液_度並無特龜定,較 的是400mPa.S〜25GGmPa.s,更好的是_m mPa.s- υυυ 201241142 32207_D pif 的疋不使用乾燥風而使其乾燥。 —乾燥時間是根據黏著材組成物溶液的塗佈量而適當 ’通常為0.5分鐘〜5分鐘,較好的是2分鐘〜4分鐘 的㈣内。乾燥溫度並無特別限定,通常為80°C〜15CTC, 較好的是80°C〜13〇。(:。 根據以上條件’可形成與接著劑層的貼合面的算術平 均粗輪度Ra為G.G15㈣〜〇.5,的範圍的黏著劑層。 另外,黏著劑層的形成可於隔離膜(separator)上塗 佈黏著劑組成物而形成黏著劑組成物的塗佈膜後 ,於上述 =Μ下使塗佈膜乾燥而形成黏著劑層。然後,藉由於 基材上轉印黏著劑層而獲得切割膜。 (切割、黏晶膜) Α如圖1 (a)所示,切割、黏晶膜10是於基材1上依 ^層有黏著劑層2以及接著劑層3的構成。而且,如圖 成。不’亦可為僅於工件貼附部分形成有接著劑層3,的構 接觸ί : 二黏著劑層2與接著劑層3是於多點 I Α狀接觸狀,4下接著,黏著劑層2與接著劑層3 對於貼合面積而為35%〜9Q%的範圍内,較 、疋35%〜80% ’尤其好的是35%〜75%。 =為大於等於35%,可防止接著劑層與黏 = =過度變大,從而可防止切割時= 干等體aB片的晶片飛散。另—方面,藉由 於等於9〇%’可防止接著_麵著劑層的闕面積變大 201241142 32207—D pif 而l黏著性過度變大,從而可防止拾取性下降。 粗糙度=Γ5 3 _細2鳴_術平均 ’、、、_ 5 _叫 ’較好的是 0.05 _〜1 為^於等^0·1 _〜1㈣。若算術平均粗糖度Ra 的接觸in ^,則可將黏著劑層2與接著劑層3 姓 積P制為小於等於9〇%,防止密著力變得過大。 可減少半導體晶片拾取時的拾取性下降。另-方面, ^術平均粗糙度Ra為小於等於…,則可使黏著劑 層=與接者劑層3的接觸面積為大於等於35%,因此可將 |曰占著劑層2與接著劑層3貼合,可防止切割時產生半導體 晶片=晶片飛散。而且,於半導體晶片的黏晶時,可抑制 =接著劑層3與被黏接體之間產生空隙。結果,可防止可 靠性下降而製造半導體裝置。 另外,上述算術平均粗糙度Ra是由JIS表面粗糙度 (B0601 )定義的算術平均粗糙度。算術平均粗糙度的測 定方法,例如可列舉使用VEECO公司製造的非接觸三維 表面形狀測定裝置NT8000、ZYGO公司製造的New View 5032、島津製作所製造的原子力顯微鏡(at〇mic force microscope) SPM-9500 型等的方法。 其次,對構成本實施形態的切割、黏晶膜10的各構 成構件進行詳細說明。 上述基材1具有紫外線透射性,且成為切割、黏晶膜 10、11的強度母體。例如可列舉:低密度聚乙烯、直鏈狀 聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、 201241142 32207_D pif 無規共聚合(random copolymerizing)聚丙烯、欲段共聚 合 (block copolymerizing ) 聚丙烯、均聚丙稀 (homopolypropylene )、聚丁烯、聚曱基戊烯等聚烯烴 (polyolefin ),乙烯-乙酸乙烯酯共聚物、離子聚合物 (ionomer)樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯_(甲基) 丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯 -己烯共聚物、聚胺基甲酸醋(p〇lyurethane)、聚對苯二甲 酸乙二酯、聚萘二曱酸乙二酯等聚酯,聚碳酸酯、聚醯亞 胺、聚醚醚酮、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、 聚苯硫趟、芳族聚醯胺(aramid)(紙)、玻璃、玻璃布(咖 cloth)、氟樹脂、聚氯乙烯、聚偏二氣乙烯、纖維素系樹 脂、聚矽氧樹脂、金屬(箔)、紙等。 此外,基材1的材料可列舉上述樹脂的交聯體等聚合 物(polymer)。上述塑膠膜(plasticmm)可不加以延伸而 使用,亦可使用視需要經單軸或雙軸延伸處理的塑朦膜。 利用藉由延伸處料而賦予熱收縮性的樹脂薄#,則藉由 於切割後使,基材1熱收縮,而可使黏著劑層2與接著劑 層3、3’的^著面積下降,可實現半導體晶片目收的容易化。 為了提高與鄰接層的密著性、保持性等,基材1的表 面可實施’_的表面處理,例如鉻酸纽、臭氧暴露(〇麻 exposure )火心暴路(name哪〇8脱)、高壓電擊(咖⑽匕 s々hock )暴路離子化射線處理(—ζ—触也〇11㈣瓣nt) 35生或物_處理’以及利用底塗劑(例如,下述黏 者物質)的塗佈處理。 17 2012411422,2201 _D pif 上述基材1可適當選擇同種或異種的基材來使用,可 使用視^要摻合有數種基材的基材。而且,為了對基材} 賦予抗靜電能力,可於上述基材1上設置由金屬、合金、 該些的氧化物等構成的厚度為3〇人〜5〇〇人左右的導電性 物質的蒸鑛層。基材1可為單層或者兩種或兩種以上的多 層。 基材1的厚度並無特別限制,可適當決定,通常為5 〜200 左右。 上述黏著劑層2例如是包含紫外線硬化型黏著劑構 f ° f外線硬化型黏著劑可藉由紫外線照射而增大交聯 又合易使备、外線硬化型黏著劑的黏著力下降,可藉由僅 =圖2所_黏著· 2的與半導體晶_附部分相對應 f照射紫外線,岐置上述部分2a與其他部分2b 的黏者力的差。 化型根據圖2所示的接著劑層3,,使紫外線硬 述可容易地形成黏著力明顯下降的上 ^二已硬化且點著力下降的上述部… 容易剝離的性質。另-方面,未照射紫 #刀具有充*的黏著力’形成上述部分2b。 劑層2中,由二更:二::『的切割、黏晶膜10的黏著 部分^接著^ 3 /硬化型黏著劑所形成的上述 紫外線硬;f型; 則了在接者、剝離的平衡良好的狀態下 18 201241142 32207—D pif 支持用以將半導體晶片固著於基板等被黏接體上的接著劑 層3。於圖2所示的切割、黏晶膜n的黏著劑層2中,上 述。P七2b可固定晶圓環(wafer如径)。 上述紫外線硬化型黏著劑具有碳_碳雙鍵等紫外線硬 化性官能基,且可無特別限制地使用顯示黏著性的紫外線 硬化型黏著劑。紫外線硬化型黏著劑例如可例示:於丙烯 酸系黏著劑、橡膠系黏著劑等一般的感壓性黏著劑中調配 有兔外線硬化性單體(m〇n〇mer )成分或寡聚物(〇lig〇mer ) 成分的添加型紫外線硬化型黏著劑。 作為上述感壓性黏著劑,自半導體晶圓或玻璃等忌污 ^的電子零件的超純水或料錢溶獅清潔洗淨性 等方面考慮,較好的是以丙烯酸系聚合物為基礎聚合物 (base p〇lymer )的丙烯酸系黏著劑。 上述丙烯酸系聚合物,例如可列舉使用(曱基)丙烯酸 =基酯一(例如’甲酯、乙酯、丙酯、異丙酯、丁酯、異丁 S曰第丁齣、弟二丁S旨、戊醋、異戊酯、己醋、庚酯、 辛西曰、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一 巧醋、十二烧基醋、十三烧基酯、十四烧基醋、十六烧 基酯2 ^八烷基酯、二十烷基酯等烷基的碳數為1〜30' 尤其疋破為4〜18的直輸或支鏈狀絲料)以及(曱 基)丙烯酸诚基酿(例如,環戊酯、環己醋等)中的一種 或者兩種^兩種以上作為單體成分的丙稀酸系聚合物等。 另外’所謂(甲基)丙烯酸醋,是指丙烯酸醋及/或曱基丙婦 酸醋,本發明的(曱基)全部是相同的含義。 19 201241142 32207_D pif 上述丙烯酸系聚合物為了改善凝聚力、耐熱性等,亦 可視需要而包含與可與上述(曱基)丙烯酸烧基S旨或環烧基 酯共聚合的其他單體成分對應的單元。此種單體成分,例 如可列舉:丙烯酸、曱基丙烯酸、(甲基)丙稀酸羧基乙酯、 (甲基)丙烯酸叛基戊S旨、亞甲基丁二酸(itaconic acid)、順 丁烯二酸(maleic acid)、反丁烯二酸(fumaric acid)、丁 烯酸(crotonicacid)等含羧基單體;順丁烯二酸酐、亞甲 基丁一酸針專酸肝早體,(曱基)丙稀酸2-經基乙醋、(曱基) 丙烯酸2-經基丙醋、(甲基)丙稀酸4-經基丁酯、(甲基)丙 烯酸6-羥基己酯、(甲基)丙烯酸8_羥基辛酯、(曱基)丙烯 酸10-羥基癸酯、(甲基)丙烯酸12_羥基月桂酯、(甲基)丙 稀酸(4-經基甲基環己基)甲醋等含經基單體;苯乙稀磺 酸、烯丙基磺酸、2-(曱基)丙烯酸醯胺_2_甲基丙磺酸、(甲 基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(曱基)丙烯醯 ,基萘績酸等含魏基單體;2_錄乙基丙賴基鱗酸醋 2磷酸基單體;丙烯醯胺、丙騎等。該些可共聚合的 早體成分可使用-種或者兩種或兩_上。糾可 a =體的個量較好的是小轉於料糾4〇、^ 百分比(wt%)。 包人丙埽酸系聚合物為了交聯,亦可視需要而 能體等來作為共聚合用單體成分。此種多官 早體例如可列舉:己二醇二(甲基)丙烯酸醋、⑻乙二 —释一(曱基 201241142 32207—D pif (pentaerythritol di(meth)acrylate )、三羥甲基丙燒三(甲基) 丙烯酸@旨、季戊四醇三(曱基)丙烯酸醋、二季戊四醇六(曱 基)丙烯酸酯、環氧(曱基)丙烯酸酯、聚酯(甲基)丙稀酸醋、 (曱基)丙烯酸胺基曱酸酯等。該些多官能性單體亦可使用 一種或者兩種或兩種以上。自黏著特性等方面考慮,多官 能性單體的使用量較好的是小於等於總單體成分的3〇 wt% ° 上述丙烯酸系聚合物是藉由將單一單體或者兩種或 兩種以上的單體混合物聚合而獲得。聚合可利用溶液聚合 (solution polymerization )、乳化聚合(emulsi〇n polymerization)、塊狀聚合(massp〇lymerizati〇n)、懸浮聚 合(suspension P〇lymerization)等任一種方式進行:自防 止對清潔的被賴财赫轉方騎慮,較好的是低分 子量物質的含量較小。自該方面考慮,㈣酸系聚合物的 數量平均分子量較好狀大於等於3G萬,更好的是仙萬 〜300萬左右。 此外,上述黏著劑中’為了提高作為基礎聚合物的丙 烯酸系聚合㈣量平均分子量,亦可適外部交 聯劑。外部㈣紐的频枝,可騎添加聚異氛酸醋 —isocyanate)化合物、環氧(ep〇xy)化合物、氮丙咬 (―)化合物、三聚氰月安(mdam 謂交聯劑來進行反應㈣法。歸心㈣ 外部交聯綱❹量的情況’ 衡,並且根據作為黏著劑的使用二合平 21 201241142 32207_D pif 較好的是相對於上述基礎聚合物丨⑻重#份蝴配小 於5重量份左右,更好的是調配〇1重量份〜5重量份。 此外,黏著射視需要’除上述成分之外,亦可使用 公知的各種黏著賦予劑、抗老化劑等添加劑。 所調配的上述紫外線硬化性的單體成分,例如 舉:胺基曱酸醋寡聚物、(甲基)丙稀酸胺基甲酸酷、三 甲基丙烧三(甲基)丙烯酸醋、四經甲基甲烧四(甲基)丙稀於 酉曰、季戊四醇二(甲基)丙馳酯、季戊四醇四(甲基)丙 酯、二異戊四醇單經基五(甲基)丙稀酸酉旨、二季戊四醇六 (曱基)丙烯酸醋、1,4-丁二醇二(甲基)丙烯酸醋等。另外了 1外線硬化性絲物成分可辟:胺基㈣料、聚、 聚酷系、聚碳酸㈣、聚丁二烯系等各種寡聚物,較好的 是該寡聚物的分子量為勘〜3G_左右的範圍。紫硬 化f生的單體成分或絲物成分_配量可根據上述黏著 =的種類’來適當決定可降低黏著的黏著力的量。 书,相對於構成黏著劑的丙烯酸系聚合物等基礎聚人 ⑽重量份,上述調配量例如為5重量份〜5〇〇重量份口, 好的是40重量份〜15〇重量份左右。 此外,紫外線硬化型黏著劑除上述所說明的添加型 =線硬化型黏著劑之外’可列舉將聚合物側鏈或主鍵中或 主鏈末端具有碳_碳雙鍵的聚合㈣作基礎聚合物的内 型紫外線硬化型黏著劑。内在型紫外線硬化型黏著劑由 ^不必含有作為低分子量成分的寡㈣成分等,或者不含 很夕’故絲物成分料會隨相㈣而於黏著劑中移 22 201241142 32207_D pif 動,可形成穩定的層結構的黏著劑層,因此較好。 上述具有碳-碳雙鍵的基礎聚合物’可無特別限制地使 用具有碳-碳雙鍵且具有黏著性的基礎聚合物。此種基礎聚 合物較好的是以丙烯酸系聚合物為基本骨架的基礎聚合 物。丙稀酸系聚合物的基本骨架可列舉上述例示的丙烯酸 糸聚合物。 向上述丙烯酸系聚合物中導入碳-碳雙鍵的方法並無 特別限制,可採用各種方法,碳_碳雙鍵導入至聚合物侧鏈 中容易進行分子設計。例如可列舉如下方法:預先將丙烯 酸系聚合物中具有官能基的單體共聚合,然後將具有可與 »玄B此基反應的官能基以及碳-碳雙鍵的化合物,以維持碳 -碳雙鍵的紫外線硬化性的狀態下進行縮合或加成反應。 該些官能基的組合的例子可列舉:羧酸基與環氧基、 羧酸基與氮丙啶基、羥基與異氰酸酯基等。該些官能基的 組合中,自反應追縱的容易度考慮,較好的是經基與異氰 酸酯基的組合。另外,若為藉由該些官能基的組合而生成 上述具有碳-碳雙鍵的丙烯酸系聚合物的組合,則官能基可 位於丙烯酸系聚合物與上述化合物的任一侧,上述較好的 組合中,較好的是丙烯酸系聚合物具有羥基,且上述化合 物具有異氰酸酯基的情況。該情況下,具有碳_碳雙鍵的異 氰酸酯化合物例如可列舉:甲基丙烯醯基異氰酸酯、 基丙烯醯氧基乙基異氰酸酯、間異丙烯基_^,^_二甲基苄 基異氰酸酯等。此外,丙烯酸系聚合物是使用將上述例示 的合羥基單體或2-羥基乙基乙烯醚、4_羥基丁基乙烯醚、 23 201241142 32207_D pif 成的丙稀酸系 一乙二醇單乙烯醚的醚系化合物等共聚合而 聚合物。 上述内在型紫外線硬化型黏著劑可單獨使 有碳-碳雙鍵的基礎聚合物(尤其以_系聚 达具 ,不使特性惡㈣程度魏上述料線硬純°單二^ 或养聚物成分。通常相對於基礎聚合物i⑻重量份豆刀 線硬化性寡聚物成分等30重量份的範圍内,較好的,夕 重量份〜10重量份的範圍。 疋 於藉由紫外線等進行硬化的情況,上述紫外線硬化型 黏著劑中含有光聚合起始劑。光聚合起始劑例如可列舉: 4-(2-經基乙氧基)本基(2-經基_2_丙基)g同、經基y 一曱基苯乙嗣、2-甲基-2-經基苯丙酮、1_經基環己基笨美 酮等α-酮醇(a- ketol)系化合物;甲氧基苯乙鲷、2,2_ 一曱氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2_甲基 -1·[4-(曱硫基)-苯基]-2-嗎琳基丙烧-1等苯乙酮系化合物; 安息香***(benzoin ethylether )、安息香異丙醚、大菌香 偶姻曱喊(anisoin methylether)等安息香醚系化合物;节 基二曱基縮酮(benzyl dimethyl ketal)等縮酮系化合物; 2-蔡續醯氣(2-naphthalene sulfonyl chloride)等芳香族石黃 酿氣糸化合物,1-本嗣_1,1_丙二自同-2-(0-乙氧基幾基)月亏等 光活性將系化合物;二苯甲酮(benzophenone )、苯曱醯苯 曱酸、3,3’-二甲基-4-曱氧基二苯甲酮等二苯甲酮系化合 物;。塞順酮(thioxanthone)、2-氣。塞°頓酮、2-甲基嗟”頓g同、 2,4-二曱基°塞噸酮、異丙基°塞°頓酮、2,4-二氣嘆噸酮、2,4- 24 201241142 32207_D pif 二乙基°塞°頓酮、2,4-二異丙基喧噸酮等嗟噸酮系化合物; 樟腦醌(camphoroquinone ) ;ι| 化酮(hal〇genated ketone ); 醯基膦氧化物(acylphosphinoxyde );醯基構酸酯 (acylphosphonate )等。相對於構成黏著劑的丙烯酸系聚 合物等基礎聚合物100重量份,光聚合起始劑的調配量例 如為0.05重量份〜20重量份左右。 此外’紫外線硬化型黏著劑例如可列舉:揭示於日本 專利特開昭60-196956號公報中的橡膠系黏著劑或丙烯酸 系黏著劑等,該些黏著劑含有具有兩個或兩個以上不飽和 鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚 合性化合物’與羰基化合物、有機硫化合物、過氧化物、 胺、鏽鹽系化合物等光聚合起始劑。 對於接著劑層3,3,上述黏著劑層2的黏著力較好的 是 0.04N/10mm 寬〜0.2N/l〇mm 寬,更好的是 〇 〇6Ν/ι〇 mm寬〜0.1 N/10 mm寬(90度剝離力,剝離速度為3〇〇 mm/mi小若上述黏著劑層2的黏著力在上述數值 内,則於拾取黏晶膜的附接著劑的半導體晶片時,不 該半導體晶片過分地固定,可實現更良好的拾取性。 於上述黏著劑層2上形成上述部分2a的方法, 舉如下方法:於基材丄上形成紫外線硬化錄著劑斧1 向上述部分2a上部分性地騎科線而使其硬化。^性 紫外線照射可經㈣成有與接著劑層(半導體晶圓貼= 分)3a以外的部分3b等相對應的圖案的光罩而進疒' 外,可列舉點狀地照射紫外線而進行硬化的方法等紫= 25 201241142 32207 D pif 線硬化型黏著劑層2的形成可藉由將設置於隔離膜上的紫 外線硬化型黏著劑層轉印於基材丨上而進行。部分性紫外 線硬化亦可對設置於隔離膜上的紫外線硬化型黏著劑層2 進行。 θ 於切割、黏晶膜10的黏著劑層2中,可對黏著劑層2 的-部分照射紫外線,以使上述部分2&的黏著力〈其他曰部 分沘的黏著力可使用基材1的至少單面的與接著劑 層(半導體晶圓貼附部分)3a相對應的部分以外的部分的全 部^-部分經遮光的基材,於該基材上軸紫外線硬化^ 黏著劑層2後騎紫外線,使與接著(半導體晶圓貼附 部分)3a相對應的部分硬化,從而形成使黏著力下降的上 述部分2a,光㈣可於支制上對可形絲罩的材料進 仃印刷或驗等而製作。藉此,可高效率崎造本發明 切割、黏晶膜1 〇。 々黏者劑層2的厚度並無特別限定,自晶片切割面的缺 ,防止及接著層的保持固定的兼顧性等方面考慮,較好的 疋1 "m〜50㈣左右。較好的是 m〜3 好的是5㈣〜25㈣。 以更 述接著劑層是具有接著功能的層,作為該接著劑層 ^材料’可列舉將熱塑性細旨與熱固性则旨併用的材 ;又三亦可單獨使用熱塑性樹脂。 接著劑層3,3’的積層結構並無特別限定,例如可 僅由接著劑層單層構成的結構、或於核心、材料(ccJe material)的單面或雙面形成有接著劑層的多層結構等。上 26 201241142 32207—D pif 述核心材料可列舉:膜(例如聚酿亞胺膜、聚g旨膜、聚對 本二曱酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜 等)、經玻璃纖維或塑膠製不織纖維強化的樹脂基板、石夕基 板或玻璃基板等。 上述熱塑性樹脂可列舉:天然橡膠(naturalrubber)、 丁基橡膠(butyl rubber )、異戊二烯橡膠(isoprene rubber )、 氣丁二烯橡膠(chloroprene rubber)、乙浠-乙酸乙烯酯共 聚物、乙烯-丙稀酸共聚物、乙烯-丙烯酸酯共聚物、聚丁 二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6_尼龍 或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸樹脂、聚 對本一甲酸乙二醋(polyethylene terephthalate,PET )或聚 對苯二曱酸丁二酯(p〇lybutyiene terephthalate,PBT)等 飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。該些熱 塑性樹脂可單獨使用’或者將兩種或兩種以上併用使用。 該些熱塑性樹脂中,尤其好的是離子性雜質較少、耐熱性 較高、可確保半導體元件的可靠性的丙烯酸樹脂。 上述丙烯酸樹脂並無特別限定,可列舉以具有碳數為 小於等於30、尤其是碳數為4〜18的直鏈或支鏈烷基的丙 烯酸或曱基丙烯酸酯的一種或者兩種或兩種以上作為成分 的聚合物等。上述烷基例如可列舉:甲基、乙基、丙基、 異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己 基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、 異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、 十四院基、硬脂基(stearyl)、十八烷基、或十二烷基等。 27 201241142 32207_D pif 此外’軸_L述聚合物的其他㈣並無_限定,例 如可列舉:如丙烯酸、甲基丙烯酸、丙烯酸縣乙酷 烯酸叛基戊S旨、亞甲基丁二酸、順丁稀二酸、反 或丁烯酸等的含叛基單體,如順丁稀二酸針或亞甲基丁二 酸酐等的酸野單體,如(曱基)丙烯酸2_羥基乙醋、(甲基) 丙烯酸2_經基丙g旨、(甲基)丙稀酸4_經基丁醋、(甲美)土丙 烯酸6-羥基己醋、(曱基)丙烯酸8_經基辛自旨、(甲基)土丙烯 酸10-經基癸醋、(甲基)丙稀酸12_經基月桂基醋或丙稀酸 (4-經基曱基環己基)㈣的含祕單體,如苯乙稀續 酸、烯丙基磺酸、2-(曱基)丙烯醯胺_2_曱基丙磺酸、(甲基) 丙=酿,丙確酸、(曱基)丙烯酸磺丙醋或(曱基)丙烯醯氧基 茶續酸等的含石黃酸基單體,或如經基乙基丙歸酿基磷酸 酯等的含磷酸基單體。 上述熱固性樹脂可列舉:酚樹脂、胺基樹脂、不飽和 聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、 或熱固性聚醯亞胺樹脂等。該些樹脂可單獨使用或將兩種 或兩種以上併用使用。尤其好的是使半導體元件腐蝕的離 子性雜質等的含量較少的環氧樹脂。另外,環氧樹脂的硬 化劑較好的是酚樹脂。 上述環氧樹脂若為通常用作接著劑組成物的環氧樹 月曰’則無特別限定’例如可使用:雙齡A (bisphenol A) 型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A 型、雙酌· AF 型、聯苯(biphenyl)型、萘(naphthalene ) 型、苐(fluorene)型、苯紛盼酸(phenolnovolac)型、鄰甲 28 201241142 32207—D pif 紛齡路(orthocresolnovolac)型、三經基苯基曱烧型、四 盼基乙烷(tetraphenylol ethane )型等二官能環氧樹脂或多 官能環氧樹脂,或者乙内酿脲(hydantoin)型、三縮水甘 油基異氰尿酸酯(trisglycidyl isocyanurate )型或縮水甘油 胺型等環氧樹脂。該些環氧樹脂可單獨使用,或者將兩種 或兩種以上併用使用。該些環氧樹脂中尤其好的是酚醛型 環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四 酚基乙烷型環氧樹脂。其原因在於,該些環氧樹脂與作為 硬化劑的酴樹脂富有反應性,且耐熱性等優異。 ’ 此外,上述酚樹脂發揮上述環氧樹脂的硬化劑的作 :搭:可Γ:苯峰樹脂、苯峨基樹脂、甲紛 祕咖1三丁基苯__脂、壬基苯_轉脂等 =,,可溶酚醛(resol)型酚樹脂、聚對羥基苯 乳苯乙料。該些_脂可單獨使用,或者將兩 種或兩種以上制使用。該些 _樹脂、苯紛芳絲樹脂。 ^本驗 置的連接可靠性。 其·在於可提局半導體裝 與盼樹脂的調配比例,例如較好的是調 配成相對於上述環氧樹脂成分中的= 脂中的絲為〇.5當4〜2()<^ I魏基’賴 當量。即,Μ因以 虽罝。更好的是〇.8當量〜1.2 比例脫離上述=在述r樹脂與盼樹脂的調配 脂硬化物的雜變得容=5付分的硬化反應,環氧樹 於本i明巾’尤其好的是使用環氧樹脂、紛樹 29 201241142 32207—D pif 脂以及丙烯酸樹脂的黏晶骐。兮 少且樣較高,故可確保半匕=由於離子性雜質較 下的調配比是相對於丙_樹^=件的可靠性。該情況 脂與紛樹脂的混合量為1〇 丨⑽重1份’環氧樹 里仂〜200重詈份。 於使本發明的接著劑層3 里忉 情況,可於製作時添加與聚^ 以某齡度父聯的 反應的多官能性化合物作為;聯=末=基等 接著特性提高,實現耐熱性的改善9 了使⑷皿下的 是心=採=工。尤其,更好的 酸醋、μ-萘二異氰_、多元:對苯二異氰. 等聚異細化合物。交聯劑的添力 100重量份,通常較好的是⑽5重量份〜 =的:量份,則接著力下降,因此欠佳。另-^杜右父聯劑的量少於〇·〇5重量份,則凝聚力不足,因 此人佳。而且,可與此種聚異氰酸醋化合物一起, 而含有環氧樹脂等其他多官能性化合物。 此外,於接著劑層3、3,中可適當調配無機 無機填充劑的調配是對接著劑層3、3,的表面賦予凹凸。而 且’亦可賦予導電性或提高導熱性、調節儲存雜模數等。 上述無機填充劑例如可列舉:矽土(silica)、黏土 (clay)、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化 石夕、氮化石夕等陶免(emmic^類,I呂、銅、銀、金、錄、 路金σ錫辞免、焊錫等金屬或合金類,以及其他由 30 201241142 32207_D pif 碳等構成的各種錢粉末。該些無 上併用使用。其中夕 土 ’尤其好的疋使用炼融石夕土。 無機填充劑的平均粒徑較好的是〇 範圍内,更好的是〇.一3 "m的範圍内。5若 的於於αι以使上述接著劑層的 = m。另一方面’若上述平均粒徑超過5 則難以使⑹小於1㈣。另外,於本發明中,可將 平均粒她互不同的無機填_彼此組合仙。此外 均粒徑例如是_亮度式粒度分布儀⑽Rm 置名.LA-910)求出的值。 上述無機填充_調配量較好的是相對於有機樹脂 成分100重量份而設定為20重量份〜80重量份。尤苴好 的是20重量份〜70重量份。料機填充劑的調配量^於 20重量份’則耐熱性下降,因此有若長時間暴露於高溫熱 歷程中,則有接著劑層3、3,硬化而造成流動性或嵌入性下 降的情況。此外,若無機填充劑的調配量超過8〇重量份, 則接著劑層3、3,的儲存彈性模數變大。因此,有已硬化的 接著劑難以應力緩和,於密封步驟中對於凹凸的嵌入性下 降的情況。 另外,接著劑3、31中,除上述無機填充劑以外,視 需要可適當调配其他添加劑。其他添加劑例如可列舉:難 燃劑(fire retardant)、矽烷偶合劑(Siiane coupling agent) 或離子捕捉劑(ion trapping agent)等。 31 201241142 32207_Dpif ”上述難燃劑例如可列舉:三氧化錄、五氧化録、漠化 壤乳樹脂等。該些難燃劑可單獨使用,或者將兩種或兩種 以上併用使用。 Λ裡 里上述石夕烧偶合劑例如可列舉H4-環氧環己基)乙 基二甲氧基石夕院、卜縮水甘油氧基丙基三甲氧基石夕烧、r -縮水甘油氧基丙基甲基二乙氧基矽烷等。該些化合物可單 獨使用,或者將兩種或兩種以上併用使用。 ,離子捕捉劑例如可列舉:水滑石(hyd她lcite) =風氧化㈣^些離子敝劑可翔使用,或者將兩 種或兩種以上併用使用。 接著劑層3、3,的厚度(於積層體的情況為總厚度) 並”.、特別限定,例如為5 _〜1〇〇㈣左右較好的是 5 /z m〜50 y m左右。 上述切割、黏晶膜1〇、U的接著劑層3、3,較好的 由隔離膜保護(未圖示隔離膜具有作為保護接著劑声 用H至供實用為止的保護材的功能。而且,_膜進而可 獅者劑層2上轉印接著劑層3、3,時的支持基材。隔 =膜=切割、黏晶膜的接著劑層3、3,上貼附工件時剝 離。隔雜可使驗_聚對苯二甲酸乙二g旨(ΡΕΤ)、聚 ’或氟系_劑 '長鍵烧基丙騎醋系剥離 劑荨剝離劑進行表面塗佈的塑膠膜或紙等。 a接著劑層3,3,自接著劑層的接著功能方面考慮,較好 是至^在與面内方向垂直的方向上具有某種程度_ 。另—方面,於接著劑層3,3,整體過度具有彈性的情況, 32 201241142 32207_Dpif 即使於痒線接合(wireb〇nding)時 合有接著劑層3、3,的導線架充 受到 3、3,的彈性力的阻礙。 Μ曰又到接者劑層 量,產生輝接不良礙於而導致_ 〜赋左細高㈣辦下進;。於靴 者於牛導體日日>{而難以拾取的情況。 後更:=::!彈_^^ 超過5。MPa,則焊線接:::T上 ^dless)結構树徵料導 定=線 =細賴__難罐 理的:::nr拉;數,定方法如下:向實施有脫模處 3'r5〇mc
烘相中放置i小時後,使用黏彈性測定裝 ,贈ic公司製造’型號:rsa π),來測定·。J 枵,考劑層3、3’的拉伸儲存彈性模數。更詳細而言 樣口口尺寸為長度则啊寬度5.Qmmx厚度Q丨職 33 201241142 32207_D pif 定試料安裝於膜拉伸測定用夾具上,於50°C〜25(TC的溫 度區域’以頻率為1.0 Hz、應變為0.025%、升溫速度為 l〇°C/分的條件進行。 (半導體裝置的製造方法) 本發明的切割、黏晶膜1〇、U是將接著劑層3、3,上 任意設置的脫模膜適當剝離,以下述方式使用。以下,一 面參照圖,一面以使用切割、黏晶膜10的情況為例進行說 明。 首先’如圖1所示 ,一-叫上小,wp刀害丨j、邾品胰ιυ中的接著濟 層3的接著劑層(半導體晶圓貼附部分)3a上壓接半導體曰£ 圓4’將該半導體晶圓4接著保持而進行固定(安裝步驟) 本步驟j一面利用壓接輥等按壓機構進行按壓一面進行£ 接著’進行半導體晶圓4的切割。藉此,將 ε 圓曰4切割成狀尺寸而分離,製造半導體晶片$。切害^ 如疋自半導體晶@ 4的電路面遍據常法 ,步驟中例如可採用切人至切割、黏晶膜1G的^卜入^ 的_方式等。本步驟中所使用的叫裝置孟 或晶且亦可抑制半導體〜:::卩:晶片缺陷 為了將接著固定於切割、黏曰 反禎 剝離’而進行半導體晶片5的拾:。、於取的晶片 限定’可採用先前公知的各 ,取的方法並無特別 等,針(,將 34 201241142 32207_D pif 膜10侧挑起’再利用拾取裝置將挑起的半導體a片$ ^制^劑層2照射紫外線後進行。藉此,黏著劑層, =接者劑層(半導體晶圓貼附部分)3a的黏著力下降,曰鐵 ,容易剝離半導體晶片5。結果可不使半導體晶片損二 拾取。紫外、㈣__射強度、照射日㈣並: =:Γ艮據需要進行適當設定。此外,紫外線照射 使用的光源可使用上述光源。 所拾取的半導體晶片5經由接著劑層(半導體晶圓貼 附部分)3a而接著固定於被黏接體6上(黏晶)^皮黏接體 6 y列舉:導線架、tab膜、基板或另行製作的半導體晶 片等。被黏接體6例如可為容易變形的變形型被黏接體, 亦可為難以變形的非變形型被黏接體(半導體晶圓等)。 〇上述基板,可使用先前公知的基板。此外,上述導線 架I使用Cu導線架、42合金導線架等金屬導線架或由玻 璃%氧、雙馬來醯亞胺-三嗪(bismaleimide出拉丨狀,Βτ )、 聚醯亞lie等構成的有機基板^ ,本發明並不限定於此, 亦包括安裝半導體元件,與半導體元件電性連㈣可使用 的電路基板。 於接著劑層3為熱硬化型的情況,藉由加熱硬化,將 半導體晶片5接著固定於被黏接體6上,提高耐熱強度。 另外,半導體晶片5經由接著劑層(半導體晶圓貼附部分)3a 而接著固定於基板等上,可供於回流焊步驟。 另外,上述黏晶可不使接著劑層3硬化,而僅暫時固 35 201241142 32207_D pif ^黏接? 6上。然後,亦可不經過加熱步驟而進行烊 谢^彻密封樹脂將半導體^密封,將該密封 树月日進行後硬化(after cure)。 六相:?3:二,接著劑層3是使用暫時固著時的剪切接著 f „黏接體6而為大於 0.2 MPa的接著劑層3, 用〇 2 MPa〜1〇 MPa的範圍内的接著劑層3。 ^者劑層3的剪切接著力至少大於等於G.2 MPa,則即 驟ΐίίΐϊ步驟而進行焊線接合步驟,亦不會由於該步 。聲波振動或加熱,而於接著劑層3鮮導, ^著面上產生剪切變形^即,“由於 皮:動而使半導體元件活動,藉此防止 部引7,將齡舰6的端子部(内 (未圖示)電性端與半導體^上的電極焊塾 使用金線、紹線⑽^驟(參照圖3)。上述接線7例如 〜靴的範圍内^。進行料接合時的溫度是_ 外,焊線接的是8〇°c〜22〇°c的範圍内。此 熱至上述溫;範圍σ;;時間是數秒〜數分鐘。接線是於經加 加加壓的壓將超聲波的振動能量與施 分)3 a本^^"^行# _ (半導體晶®貼附部 著劑層(铸體。而且,本轉的過程林會利用接 接體6固著。θ附部分如而將半導體晶片5與《 36 201241142 32207—D pif 上述密封步驟是利用密封樹脂 的步驟(參照圖3)〇太半驟3达 卞守版日日月5在封 上的半導㉝日^ Λ梓驟疋為了保護搭载於被黏接體6 上的丰導m及接線7而進行。本步 ^密f用樹脂成型而進行。密封樹脂8例如使用 树月曰。樹月曰讀時的加熱溫度通常是於175。(:下進行60秒 。〜9〇秒,但本發明並不限定於此,例如可於赋〜^ C下固化數分鐘。藉此,使__硬化,並聽由接著 體口者。即,於本發明中,即使於 驟的情況,本步驟中亦可進行利用丁 附部分)3a的固著,可有助於m』日、千等遐日曰回貼 導體裝置的製造0摘。。/ a步職以及縮短半 ㈣使上述密封步驟中硬化不足的 Π==Γ(半導體晶圓貼附部二 内’加熱時間是0.5小時〜8 此外,如圖4所示,本發明的 地用於將多個半導體晶片黏00膜亦可杈好 (three-dimensional packaging)的^ 進行二維_封裝 黏晶膜而將半導體晶片三維封°圖4是表示經由 圖4所示的三維封裝的情況時,、首先的剖面示意圖。於 I无將以與半導體晶片成 37 201241142 32207_D pif 為相同尺寸的方式切出的至少一個接著劑 貼附部分)3a暫時固著於被黏接體6上 2 = 層(半導體晶圓貼附部分)3“將半導體晶片5以== 晶片5的焊線接合面為上側的方式暫時固著:牛導體 半導體晶# 5的電極焊塾部分而將黏晶膜(接& = 時固著。然後,將其他半導體晶片㈣半導體曰曰〕$ =焊線接合面為上侧的方式暫時固著於黏晶膜(=
層)13上。 J 接著’不進行加熱步驟,而進行烊線接合步驟。藉此, 將半導體晶片5以及其他半導體晶片15中的各 與被黏接體6以接線7進行電性連接。 干’ 繼而,進行利用密封樹脂8將半導體晶片5等密封的 ^封步驟’使密封樹脂硬化。與此同時,利用接著劑層(半 導體晶_附部分)3a,將齡接體6與半導體晶片$之間 15之間亦固著。另外,密封步驟後- 居(丰的三維封裝的情況,不進行藉由接著劑 層導體Ba圓貼附部分)3a、黏晶膜( 理’因此可實現製造步驟的丄 ; 1卜:亦不會於被黏接體6產生—’或於半導 =====體晶片15上產生裂痕,因此可使半 另外,如圖5所示,可為於半導體晶片之間經由黏晶 38 201241142 32207—D pif 膜而積層間隔片的三維封裝。圖5是表示經由間隔片 2晶膜將兩辨導體以進行三維封裝_子的剖面示 思圖。 於圖5所示的三維封裝的情況,首先於被黏接體6上 依:人積層接著綱(半導體晶部分你、半導體 :及黏晶峨著劑層)21,並暫咖著。紐,於黏晶二 者劑層)21上依次積層間隔片9、黏晶膜(接著劑声^卜 (半導體晶圓貼附部分如以及半導體晶/5,並暫 接著,不進行加熱步驟,而如圖5所示進行 ^驟垃^此’將半導體晶片5的電極焊塾與被 ‘ 性以接線7進行電性連接。 无賤电 繼而,進行利用密封樹脂8將半導體晶片5密封 封步驟,使密封樹脂8硬化,並且利用接著劑層(半導體曰曰 圓貼附部分)3a、黏晶膜(接著劑層口i使被黏接體6與^ !晶片气之間、以及半導體晶片5與間隔片9之間固著。 猎此’獲得半導體封裝。密封步雜好的是僅將半導體曰 片5側進行單面密封的總括密封法。密 = ,著;片上的半導體晶片5進行,密封方法中 疋使用密封獅8而於模具中成型的方法。此時 伟 用具有多憾腔的由上模具與下模具賴朗模具, 進行密封轉。樹職封時的加熱溫度例如缺的是口〇 °c〜i8〇t:的範_。密封步驟後可進行後硬化步驟。 另外’上述間隔片9並無特別限定,例如可使用先前 39 201241142 32207—D pif △知的>5、聚酿亞胺膜等。此外,上述間隔片可使用 核%材料。核心材料並無特別限定,可使用先前公知的核 :材2。具體而言可使用膜(例如聚醯亞胺膜、聚酯膜、 +對苯一曱酸乙二賴、聚萘二曱酸乙二㈣、聚破酸酿 膜等)、經玻璃纖維或塑膠製不織纖維強化的樹脂基板、錄 面石夕晶圓(mimn· silicon wafer)、碎基板或玻璃基板等。 (其他事項) 於上述基板等上三維封裝半導體元件時,於半導體元 t的形成有電路的面側形成緩衝塗佈(buffer祕)膜。該 、’羨衝塗佈膜例如可列舉氮化⑪膜或由聚醯亞胺樹脂等对熱 樹脂構成的膜。 、另外,三維封裝半導體元件時,各階段所使用的黏晶 膜並不限定於由同—組成所構成的黏㈣,可根據製造條 件或用途等加以適當變更。 ,此外,於上述實施形態中,已對在基板等上積層多個 半導體兀件後總括進行焊線接合步驟的態樣進行敍述,但 本發明並不限定於此例如,亦可於每次將半導體元件積 層於基板等上時進行焊線接合步驟。 實施例 以下例示性地烊細說明本發明的較佳實施例。其 中丄Γ要未制蚊域’贱實施射記制材料或調 配罝等並雜本發㈣範圍僅限定㈣些㈣或調配量的 含義,只不過僅為說關。另外,各例中,只要未特別說 明,則份均為重量基準。 201241142 32207_D pif (實施例1) 相對於以丙烯酸丁酯為主成分的聚合物(根上工業 (股)製造,Paracron SN-710) 100份,使3份的異氰酸 酯系交聯劑(C〇ronate HX,日本聚胺酯(Nipp〇n Polyurethane))、12份的環氧樹脂(日本環氧樹脂(Japan Epoxy Resins)(股)製造,Epikote 1003)、7 份的酚樹脂 (三井化學(股)製造,MilexXLC_cc)、5〇份的作為無 機填充劑的球狀矽土(平均粒徑:〇.5〆m,Admatechs(股) 製造:SS0-25R)溶解於甲基乙基酮中,製備濃度為2〇 wt% 的接著劑組成物溶液。 利用喷注式塗佈機,將上述接著劑組成物溶液塗佈於 經聚矽氧脫模處理的由聚對苯二曱酸乙二酯膜(厚度為5〇 #m)構成的脫模膜上。塗佈厚度是乾燥後的厚度成為25 // m。接著,對脫模膜上所塗佈的塗佈層進行乾燥。乾燥 是藉由對塗佈層吹附乾燥風而進行。具體而言,是於剛塗 佈後至3分鐘,以風量為1〇 m/min、溫度為15〇它的方式, 將熱風沿MD方向(脫模膜的膜移動方向)吹附至塗佈層 上。 藉此,於脫模膜上形成算術平均粗糙度Ra為〇 34 # m、厚度為25 em的接著劑層。另外,算術平均粗糙度 Ra的測定方法如下文所述。 然後’製作黏晶膜。即’向具備冷卻管、氮氣導入管、 溫度計及攪拌裝置的反應容器中加入88 8份的丙烯酸2_ 乙基己酯(以下,稱為「2EHA」)、11.2份的丙烯酸-2-羥 41 201241142 32207—D pif 基乙醋(以下,稱為「HEA」)、0.2份的過氧化苯曱醯以 及65份的甲苯’於氮氣流中61。(:下進行6小時聚合處理, 獲得重量平均分子量為85萬的丙烯酸系聚合物a。重量平 均分子量如下文所述。2EHA與HEA的莫耳比為100 mol 對 20 mol。 向該丙稀酸系聚合物A中添加12份(相對於hea而 為80 mol%)的2-曱基丙烯醯氧基乙基異氰酸酯(以下, 稱為「MOI」)’於空氣流中5〇°C下進行48小時加成反應 處理’獲得丙烯酸系聚合物A,。 接著’相對於丙烯酸系聚合物A'100份,添加8份的 聚異氰酸酯化合物(商品名「Coronate L」,曰本聚胺g旨(股) 製&)、以及5份的光聚合起始劑(商品名「irgacure 651」、 ru巴精化(Ciba Specialty Chemicals)公司製造),製作黏 著劑溶液。 將上述製備的黏著劑溶液塗佈於PET剝離襯墊的實 施有聚矽氧處理的面上,於12(rc下加熱交聯2分鐘,形 成厚度為10 /zm的黏著劑層前驅物。接著,於該黏著劑 層前驅物表面貼合厚度為100 //m的聚烯烴膜。然後,於 50 C下保存24小時。此後’僅對黏著劑層前驅物的與半導 體晶圓貼附部分(直徑為2〇〇 mm)相當的部分(直徑為 220mm)照射紫外線,形成黏著劑層。藉此,製作具備算 術平均粗糙度Ra為0 042 的黏著劑層的切割膜。另 外,备、外線的照射條件如下文所述。 <紫外線的照射條件> 42 201241142 32207一D pif 紫外線(ultraviolet’ uv)照射裝置:高壓水銀燈 '^外線照射累s十光量:5〇〇 mj/cjjj2 功率:75 W 照射強度:150mW/em2 另外,紫外線照射是對黏著劑層前驅物直接照射。 繼而,於切割膜的黏著劑層上壓接上述接著齊j層。壓 接條件是層壓溫度為40°C,壓力為〇.2 MPa。藉此,θ獲得 本實施例的切割、黏晶膜。另外,於剝離力的^價中,^ 用利用與上述同樣的方法製作的具備算術平均粗糙度為 0.035 的黏著劑層的切割膜。 (實施例2) 製備以70份的丙烯酸2-乙基己酯、25份的丙烯酸正 丁酉曰、5份的丙烯酸作為構成單體的丙烯酸系共聚物,接 著’使3份的異氰酸酯系交聯劑(c〇ronate Ηχ,日本聚胺 酯)、30份的作為無機填充劑的二氧化矽(平均粒徑為〇 5 /zm,日本觸媒公司製造)溶解於曱基乙基酮中,製備濃 度為20 wt%的接著劑組成物溶液。 以與上述實施例1同樣的方式,將該接著劑組成物溶 液塗佈於脫模膜上,然後進行乾燥,形成接著劑層。若測 定該接著劑層的算術平均粗糙度Ra,則為〇16 。接 著,以與上述實施例1同樣的方式,將該接著劑層與切割 膜的黏著劑層貼合,製作本實施例的切割、黏晶膜。 (實施例3) 相對於以丙烯酸丁酯為主成分的聚合物(根上工業 43 201241142 32207—D pif
(股)製造’ Paracron SN-710) 100份,使3份的異氰酸 酯系交聯劑(Coronate HX,曰本聚胺酯)、12份的環氧樹 脂(曰本%氧樹脂(股)製造,gpik〇te 1〇〇3)、7份的盼 樹脂(三井化學(股)製造,MilexXLC-CC)、50份的作 為無機填充劑的球狀矽土(平均粒徑:0.5 # m,AdinatechS (股)製造.SS0-25R)溶解於甲基乙基酮中,製備濃度 為20 wt%的接著劑組成物溶液。 利用喷注式塗佈機,將上述接著劑組成物溶液塗佈於 經聚矽氧脫模處理的由聚對苯二甲酸乙二酯膜(厚度為5〇 #m)構成的脫模膜上。塗佈厚度是乾燥後的厚度成為25 。接著,對脫模膜上所塗佈的塗佈層進行乾燥。乾燥 是藉由對塗佈層吹附乾燥風而進行。具體而言,是於剛塗 佈後至1分鐘期間(乾燥初期),以風量為10 m/min、溫 度為90°C的方式,使乾燥風沿MD方向吹附至塗佈層上。 接著,於1〜3分鐘期間(乾燥後期),以風量為15 m/min、 溫度為14(TC的方式,將乾燥風沿MD方向吹附至塗佈層 上。 藉此,將算術平均粗糙度Ra為0.40 厚度為25 /zm的接著劑層形成於脫模膜上。另外,算術平均粗糙度 Ra的測定方法如下文所述。 接著,準備上述實施例1中所使用的切割膜,於該黏 。著劑層上壓接上述接著劑層。壓接條件是層壓溫度為仙 C ’壓力為0_5 MPa。藉此,獲得本實施例的切割、黏晶 膜。另外’於剝離力的評價中,使用利用與上述同樣的方 44 201241142 32207JD pif 法製作的具備算術平均粗糙度為〇〇35 “瓜的黏著劑層的 切割膜。 (比較例1) 於本比較例中,除製備接著劑組成物溶液時未添加無 機填充劑以外,以與實施例丨同樣的方式,製作本比較例 1的切副、黏晶膜。另外,與黏著劑層貼合前的接著劑層 的算術平均粗糙度Ra為0.026 #m。 (比較例2) 於本比較例中,除使製備接著劑組成物溶液時添加的 無機填充劑的調配量為85份以外,以與上述實施例2同樣 的方式,製作本比較例1的切割、黏晶膜。另外,與黏著 劑層貼合前的接著劑層表面的算術平均粗糙度Ra為15 βΐΆ。 (接著面積評價) 各實施例以及比較例中獲得的切割、黏晶膜的接著劑 層與黏著劑層之間的接著面積是以如下文所述的方式進行 測定。 即’使用Nikon (股)製造的光學顯微鏡ECUpSE ME600與OLYMPUS (股)製造的E_410相機,觀察接著 劑層與黏著劑層之間的接著面。使用市售軟體Winr〇〇f(三 谷商事(股))對所獲得的圖像進行二值化處理,算出接著 劑層未與黏著劑層接觸的區域的分布狀態以及面積比率。 圖像分析是測定3處任意區域,將平均值作為接觸面積。 結果不於下述表1。 45 201241142 32207_D pif (拾取性) 將各實施例以及比較例中獲得的切割、黏晶膜於50 °C下貼附於晶圓(直徑為8吋,厚度為75 //m)的背面。 切割、黏晶膜側的貼合面為接著劑層。 接著,使用切片機(dicer)來切割晶圓。切割條件是 轉軸(spindle)轉速為40,000rpm、切割速度為30 mm/sec, 將半導體晶片形成為1〇 mmxlO mm見方的尺寸。 然後’進行半導體晶片的拾取,檢查半導體晶片拾取 的成功率。拾取條件是針數為9根,拉下量為3 mm,挑 起量為300 //m ’挑起速度為1〇 mm/sec。此外,拾取是 使用拾取裝置(NES Machinery公司製造:CPS-100),進 行20個半導體晶片的拾取。成功率是數出半導體晶片中無 破損且附黏晶膜的半導體晶片可自切割膜上剝離的數。結 果示於下述表1。 ° (剝離力評價) 。將各實施例以及比較例中獲得的切割、黏晶膜於5〇 C下貼附於晶圓(直徑為8吋,厚度為75 #瓜)的背面。 切割、黏晶膜側的貼合面為接著劑層。 具次 刹離力評彳貝疋對於上述各切割、黏晶膜,以Γ mm寬度’測定以剝離速度3〇〇 mm/min、9〇度將接著綱 自黏者劑層上剝離時的剝離力。結果示於下述 (結果) =表1明確可知,於實施例丨〜2的切割、黏晶膜中 切』時不產生晶片飛散,而且顯示良好的拾取性。即,另 46 201241142 32207一D pif 為本實施例的切割、黏晶膜,則顯示出可提高良率而製造 半導體裝置。 相對於此’比較例1的切割、黏晶膜中’接著劑層與 黏著劑層的接觸面積過大’因此接著劑層與黏著劑層的剝 離性下降,無法拾取,晶片上產生裂紋或碎片等破損。而 且,比較例2的切割、黏晶膜中,與黏著劑層貼合前的接 著劑層的算術平均粗糙度過大,因此接著劑層與黏著劑層 的密著性不良,半導體晶圓切割時產生晶片飛散。 [表1] 實施例1 實施例2 實施例3 比較例1 比較例2 接著劑層的算術 平均粗糙度Ra[wmi 0.34 0.16 0.40 0.026 1.5 接觸面積[%] 40.16 1 86.77 65.40 99.89 30.25 拾取成功率[%1 100 100 100 0 20 日曰片飛散的產生 [個/8吋1片1 0 0 0 0 14 剝離力[N/l〇mml 0.04 0.09 0.06 3.8 0.01 【圖式簡單說明】 圖1 (a)、圖1 (b)是表示本發明的一實施形態的切 割、黏晶膜的剖面示意圖。 圖2疋表示本發明的其他實施形態的切割、黏晶膜的 剖面不意圖。 圖3是表示經由本發明的切割、黏晶膜的接著劑層來 封裝半導^晶片的例子的剖面示意圖。 圖4是表示經由上述接著劑層而將半導體晶片三維封 47 201241142 32207_D pif 裝的例子的剖面示意圖。 圖5是表示使用上述接著劑層,經由間隔片而將兩個 半導體晶片三維封裝的例子的剖面示意圖。 【主要元件符號說明】 1 :基材 2:黏著劑層 2a :黏著劑層2的與半導體晶圓貼附部分相對應的部 分 2b :其他部分 3、3’ :接著劑層 3a :接著劑層(半導體晶圓貼附部分) 3b :接著劑層(半導體晶圓貼附部分)3a以外的部分 4 :半導體晶圓 5、15 :半導體晶片(半導體元件) 6 :被黏接體 7 :接線 8 :密封樹脂 9 :間隔片 10、11 :切割、黏晶膜 13、21 :黏晶膜(接著劑層) 48
Claims (1)
- 201241142 32207_D pif 七、申請專利範園·· 1· 一種切割、黏晶膜,其為於基材上依次積層有黏著 劑層以及接著劑層的切割、黏晶膜,且上述接著劑層包含 無機填充劑、與上述黏著劑層貼合前的貼合面為凹凸狀7 算術平均粗糙度Ra為0.015 //in〜1 //m,其令與上述接 著劑層貼合鈿,上述黏著劑層的算術平均粗彳造度為 0.015 /zm〜0.5 的範圍,且上述貼合面的接觸面積相 對於貼合面積而為35%〜90%的範圍。 2. 如申請專利範圍第1項所述之切割、黏晶膜,其中 相對於上述接著劑層中的有機樹脂成分1〇〇重量份,^述 無機填充劑的調配量為20重量份〜8〇重量份。 3. 如申請專利範圍第i項所述之切害^刀恭曰曰曰膜, 上述無機填充劑是使用平均粒徑為〇1 〜5以瓜的無 49
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011216671A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 半導体ウエハの加工用テープ、その製造方法および半導体ウエハの加工方法 |
JP6013709B2 (ja) * | 2010-06-08 | 2016-10-25 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
JP5534986B2 (ja) * | 2010-07-09 | 2014-07-02 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP5653675B2 (ja) * | 2010-07-30 | 2015-01-14 | 古河電気工業株式会社 | ウエハ加工用テープ |
TW201206813A (en) * | 2010-08-11 | 2012-02-16 | Furukawa Electric Co Ltd | Wafer processing tape |
JP5435497B2 (ja) * | 2010-08-11 | 2014-03-05 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP2012069586A (ja) * | 2010-09-21 | 2012-04-05 | Nitto Denko Corp | ダイシング・ダイボンドフィルム、ダイシング・ダイボンドフィルムの製造方法、及び、半導体装置の製造方法 |
CN102624352B (zh) * | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
JP5767478B2 (ja) * | 2011-01-27 | 2015-08-19 | 古河電気工業株式会社 | 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ |
WO2012115701A2 (en) * | 2011-02-22 | 2012-08-30 | Henkel Corporation | Multilayered adhesive film |
JP2012186360A (ja) * | 2011-03-07 | 2012-09-27 | Nitto Denko Corp | ダイシング・ダイボンドフィルム及び半導体素子 |
WO2012132691A1 (ja) * | 2011-03-28 | 2012-10-04 | 日立化成工業株式会社 | 多層樹脂シート、樹脂シート積層体、多層樹脂シート硬化物及びその製造方法、金属箔付き多層樹脂シート、並びに半導体装置 |
JP5942261B2 (ja) * | 2012-09-28 | 2016-06-29 | パナソニックIpマネジメント株式会社 | プリプレグ、金属張積層板、プリント配線板 |
WO2014136836A1 (ja) * | 2013-03-07 | 2014-09-12 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
JP2015005636A (ja) * | 2013-06-21 | 2015-01-08 | 日東電工株式会社 | ダイシング・ダイボンディングフィルム |
JP6505362B2 (ja) * | 2013-11-21 | 2019-04-24 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、熱硬化型ダイボンドフィルムの製造方法、及び、半導体装置の製造方法 |
JP6501428B2 (ja) * | 2015-03-30 | 2019-04-17 | リンテック株式会社 | 樹脂膜形成用シート、及び樹脂膜形成用複合シート |
JP7495776B2 (ja) * | 2016-04-12 | 2024-06-05 | 日東電工株式会社 | 剥離ライナー付き粘着シート |
JP6721398B2 (ja) * | 2016-04-22 | 2020-07-15 | 日東電工株式会社 | ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法 |
WO2021005661A1 (ja) * | 2019-07-05 | 2021-01-14 | 昭和電工マテリアルズ株式会社 | ダイシング・ダイボンディング一体型フィルム、ダイボンディングフィルム、及び半導体装置の製造方法 |
Family Cites Families (10)
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US4961804A (en) * | 1983-08-03 | 1990-10-09 | Investment Holding Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same |
JP2002256238A (ja) * | 2001-03-05 | 2002-09-11 | Hitachi Chem Co Ltd | 接着フィルム、それを用いた半導体装置の製造方法及び半導体装置 |
JP2002256239A (ja) * | 2001-03-05 | 2002-09-11 | Hitachi Chem Co Ltd | 接着フィルム、それを用いた半導体装置の製造方法及び半導体装置 |
JP4107417B2 (ja) * | 2002-10-15 | 2008-06-25 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP4283596B2 (ja) * | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
EP1557880A1 (en) * | 2004-01-21 | 2005-07-27 | Nitto Denko Corporation | Resin composition for encapsulating semiconductor |
JP2006339236A (ja) * | 2005-05-31 | 2006-12-14 | Toyobo Co Ltd | 半導体ウエハ保護用粘着テープ |
JP2008124295A (ja) * | 2006-11-14 | 2008-05-29 | Toyobo Co Ltd | ダイ・アタッチメントテープ及びそれを使用した半導体装置 |
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