TW201229493A - Substrate quality assessment method and apparatus thereof - Google Patents

Substrate quality assessment method and apparatus thereof Download PDF

Info

Publication number: TW201229493A
Authority: TW; Taiwan
Prior art keywords: substrate; image; light; quality; evaluation value
Prior art date: 2010-12-01

Application number

TW100140415A

Other languages

English (en)

Chinese (zh)

Inventor

Kaoru Sakai

Shigenobu Maruyama

Yasuhiro Yoshitake

Kiyomi Yamaguchi

Original Assignee

Hitachi High Tech Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-12-01

Filing date

2011-11-04

Publication date

2012-07-16

2011-11-04 Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp

2012-07-16 Publication of TW201229493A publication Critical patent/TW201229493A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 167
238000001303 quality assessment method Methods 0.000 title abstract description 4
230000003287 optical effect Effects 0.000 claims abstract description 58
238000012545 processing Methods 0.000 claims abstract description 40
238000000034 method Methods 0.000 claims abstract description 22
229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
239000010409 thin film Substances 0.000 claims abstract description 5
238000013441 quality evaluation Methods 0.000 claims description 67
238000011156 evaluation Methods 0.000 claims description 61
239000010408 film Substances 0.000 claims description 39
230000007246 mechanism Effects 0.000 claims description 15
229910052732 germanium Inorganic materials 0.000 claims description 13
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
238000003384 imaging method Methods 0.000 claims description 8
238000005224 laser annealing Methods 0.000 claims description 8
229920005591 polysilicon Polymers 0.000 claims description 7
230000001678 irradiating effect Effects 0.000 claims description 4
238000000605 extraction Methods 0.000 claims description 2
239000000284 extract Substances 0.000 claims 1
229910052715 tantalum Inorganic materials 0.000 claims 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
230000000007 visual effect Effects 0.000 abstract description 8
238000005286 illumination Methods 0.000 description 28
239000013078 crystal Substances 0.000 description 21
238000001514 detection method Methods 0.000 description 17
238000007689 inspection Methods 0.000 description 16
239000011521 glass Substances 0.000 description 15
238000009826 distribution Methods 0.000 description 10
230000008859 change Effects 0.000 description 8
238000010586 diagram Methods 0.000 description 8
238000007781 pre-processing Methods 0.000 description 7
238000004519 manufacturing process Methods 0.000 description 6
239000004575 stone Substances 0.000 description 5
238000002425 crystallisation Methods 0.000 description 4
230000008025 crystallization Effects 0.000 description 4
230000006870 function Effects 0.000 description 4
239000002245 particle Substances 0.000 description 4
230000010287 polarization Effects 0.000 description 4
238000000137 annealing Methods 0.000 description 3
238000006243 chemical reaction Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
235000017166 Bambusa arundinacea Nutrition 0.000 description 2
235000017491 Bambusa tulda Nutrition 0.000 description 2
241001330002 Bambuseae Species 0.000 description 2
235000015334 Phyllostachys viridis Nutrition 0.000 description 2
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
239000011425 bamboo Substances 0.000 description 2
230000008901 benefit Effects 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000010354 integration Effects 0.000 description 2
239000004973 liquid crystal related substance Substances 0.000 description 2
230000008569 process Effects 0.000 description 2
229910052707 ruthenium Inorganic materials 0.000 description 2
230000001953 sensory effect Effects 0.000 description 2
238000011179 visual inspection Methods 0.000 description 2
241000237509 Patinopecten sp. Species 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000010485 coping Effects 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000002950 deficient Effects 0.000 description 1
210000003298 dental enamel Anatomy 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000001493 electron microscopy Methods 0.000 description 1
XWVFVITVPYKIMH-UHFFFAOYSA-N ethyl n-[4-[benzyl(2-phenylethyl)amino]-2-(2-fluorophenyl)-1h-imidazo[4,5-c]pyridin-6-yl]carbamate Chemical compound N=1C(NC(=O)OCC)=CC=2NC(C=3C(=CC=CC=3)F)=NC=2C=1N(CC=1C=CC=CC=1)CCC1=CC=CC=C1 XWVFVITVPYKIMH-UHFFFAOYSA-N 0.000 description 1
230000005284 excitation Effects 0.000 description 1
238000009499 grossing Methods 0.000 description 1
230000002452 interceptive effect Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000002265 prevention Effects 0.000 description 1
238000005086 pumping Methods 0.000 description 1
238000011002 quantification Methods 0.000 description 1
238000011158 quantitative evaluation Methods 0.000 description 1
235000020637 scallop Nutrition 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000001360 synchronised effect Effects 0.000 description 1
238000012360 testing method Methods 0.000 description 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Health & Medical Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
Immunology (AREA)
Pathology (AREA)
Engineering & Computer Science (AREA)
Textile Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)
Recrystallisation Techniques (AREA)

TW100140415A 2010-12-01 2011-11-04 Substrate quality assessment method and apparatus thereof TW201229493A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2010268339A JP2012119512A (ja)	2010-12-01	2010-12-01	基板の品質評価方法及びその装置

Publications (1)

Publication Number	Publication Date
TW201229493A true TW201229493A (en)	2012-07-16

Family

ID=46350357

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW100140415A TW201229493A (en)	2010-12-01	2011-11-04	Substrate quality assessment method and apparatus thereof

Country Status (4)

Country	Link
JP (1)	JP2012119512A (ja)
KR (1)	KR101295463B1 (ja)
CN (1)	CN102543789A (ja)
TW (1)	TW201229493A (ja)

Cited By (2)

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TWI583921B (zh) *	2015-06-15	2017-05-21	精微超科技公司	基於偏振的同調梯度感測系統及方法
TWI595232B (zh) *	2015-04-17	2017-08-11	Nuflare Technology Inc	Inspection methods and templates

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CN103018154B (zh) *	2012-12-05	2016-04-27	中国电子科技集团公司第四十五研究所	一种遍历晶粒不规则区域的多区域图像检测方法
KR20140101612A (ko)	2013-02-12	2014-08-20	삼성디스플레이 주식회사	결정화 검사장치 및 결정화 검사방법
WO2014129359A1 (ja) *	2013-02-19	2014-08-28	旭硝子株式会社	光学装置
JP6287570B2 (ja) *	2014-05-19	2018-03-07	コニカミノルタ株式会社	光デバイス検査装置および光デバイス検査方法
CN105738379B (zh) *	2014-12-12	2018-10-19	上海和辉光电有限公司	一种多晶硅薄膜的检测装置及检测方法
CN105785604A (zh) *	2014-12-24	2016-07-20	台湾动力检测科技股份有限公司	显示设备的光学层件的缺陷检测方法
KR102250032B1 (ko) *	2014-12-29	2021-05-12	삼성디스플레이 주식회사	표시 장치의 검사 장치 및 표시 장치의 검사 방법
KR101877274B1 (ko) *	2015-05-29	2018-07-12	에이피시스템 주식회사	자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법
CN108701623B (zh) *	2015-11-05	2022-10-04	米朋克斯株式会社	基板评价方法
KR101862312B1 (ko) *	2016-01-13	2018-05-29	에이피시스템 주식회사	처리물 분석 장치 및 이를 포함하는 가공 장치, 처리물 분석 방법
KR20190005862A (ko) *	2016-05-11	2019-01-16	아이피지 포토닉스 코포레이션	플랫 패널 디스플레이에 대한 섬유 레이저 어닐링된 다결정질 실리콘 막의 형태학적 특징을 측정하는 공정 및 시스템
TWI612293B (zh) *	2016-11-18	2018-01-21	財團法人工業技術研究院	Ｌｔｐｓ背板結晶品質檢測裝置及其方法
JP2018116482A (ja) *	2017-01-18	2018-07-26	株式会社東芝	物流管理装置、物流管理方法、およびプログラム
CN107677686B (zh) *	2017-09-28	2021-01-26	京东方科技集团股份有限公司	光线透过窗集成装置及采用该装置的设备
JP6978928B2 (ja) *	2017-12-25	2021-12-08	グローバルウェーハズ・ジャパン株式会社	シリコンウェーハの評価方法
CN108519266B (zh) *	2018-04-16	2020-11-24	江苏美科硅能源有限公司	一种全熔高效硅锭的分级方法
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WO2023215046A1 (en) *	2022-05-03	2023-11-09	Veeco Instruments Inc.	Scatter melt detection systems and methods of using the same
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US20030017658A1 (en) *	2000-02-15	2003-01-23	Hikaru Nishitani	Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film trasistor, thin film transistor array and image display using it
TWI254792B (en) *	2003-07-01	2006-05-11	Au Optronics Corp	Detecting method and device of laser crystalline silicon
JP4537131B2 (ja)	2004-06-30	2010-09-01	友達光電股▲ふん▼有限公司	レーザー結晶シリコンの検査方法及びその装置
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WO2010093733A2 (en) *	2009-02-13	2010-08-19	Kla-Tencor Corporation	Detecting defects on a wafer

2010
- 2010-12-01 JP JP2010268339A patent/JP2012119512A/ja active Pending
2011
- 2011-11-04 TW TW100140415A patent/TW201229493A/zh unknown
- 2011-11-30 KR KR1020110126910A patent/KR101295463B1/ko not_active IP Right Cessation
- 2011-12-01 CN CN2011103937328A patent/CN102543789A/zh active Pending

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI595232B (zh) *	2015-04-17	2017-08-11	Nuflare Technology Inc	Inspection methods and templates
TWI583921B (zh) *	2015-06-15	2017-05-21	精微超科技公司	基於偏振的同調梯度感測系統及方法

Also Published As

Publication number	Publication date
KR101295463B1 (ko)	2013-08-16
JP2012119512A (ja)	2012-06-21
CN102543789A (zh)	2012-07-04
KR20120060162A (ko)	2012-06-11

Publication	Publication Date	Title
TW201229493A (en)	2012-07-16	Substrate quality assessment method and apparatus thereof
JP5553716B2 (ja)	2014-07-16	欠陥検査方法及びその装置
US9234843B2 (en)	2016-01-12	On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging
JP5498189B2 (ja)	2014-05-21	欠陥検査方法及びその装置
US9019492B2 (en)	2015-04-28	Defect inspection device and defect inspection method
JP4322890B2 (ja)	2009-09-02	起伏検査装置、起伏検査方法、起伏検査装置の制御プログラム、記録媒体
JP2016535258A (ja)	2016-11-10	材料のマルチスケール均一性分析
CN111819596B (zh)	2021-12-07	组合模拟及光学显微术以确定检验模式的方法和***
CN112074937B (zh)	2021-06-29	用于重复缺陷检测的方法、计算机可读媒体及***
US10379335B2 (en)	2019-08-13	Illumination setting method, light sheet microscope apparatus, and recording medium
JP2007294604A (ja)	2007-11-08	外観検査装置及び外観検査方法
JP2012047654A (ja)	2012-03-08	欠陥検査装置および欠陥検査方法
KR101919901B1 (ko)	2018-11-19	웨이퍼 검사 방법
JP5068731B2 (ja)	2012-11-07	表面疵検査装置、表面疵検査方法及びプログラム
JPH10267636A (ja)	1998-10-09	表面検査方法および表面検査装置
TW201140043A (en)	2011-11-16	End face inspection method for light-pervious rectangular sheets and end face inspection apparatus
WO2019076192A1 (zh)	2019-04-25	图像重建方法、装置及显微成像装置
JP2010181328A (ja)	2010-08-19	太陽電池ウェハ表面の検査装置，太陽電池ウェハ表面の検査用プログラム，太陽電池ウェハ表面の検査方法
JP2001209798A (ja)	2001-08-03	外観検査方法及び検査装置
JP7010213B2 (ja)	2022-01-26	円筒体表面検査装置および円筒体表面検査方法
JP2012037425A (ja)	2012-02-23	多結晶シリコンウェーハの検査方法及びその装置
US8135207B2 (en)	2012-03-13	Optical inspection tools featuring parallel post-inspection analysis
JP5094769B2 (ja)	2012-12-12	ウエハの検査方法、ウエハ検査装置および半導体集積回路装置の製造方法
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JP2009222611A (ja)	2009-10-01	検査装置及び検査方法

TW201229493A - Substrate quality assessment method and apparatus thereof - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (1)

Publications (1)

Family

ID=46350357

Family Applications (1)

Country Status (4)

Cited By (2)

Families Citing this family (21)

Family Cites Families (8)

Cited By (2)

Also Published As

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