TW201223979A

TW201223979A - Insulation layer material for organic thin film transistor and organic thin film transistor

Info

Publication number: TW201223979A
Application number: TW100122791A
Authority: TW
Inventors: Isao Yahagi
Original assignee: Sumitomo Chemical Co
Priority date: 2010-06-30
Filing date: 2011-06-29
Publication date: 2012-06-16
Also published as: WO2012002436A1; JP2012033909A

Abstract

An objective of this invention is to provide an insulation layer material for organic thin film transistor allowing an organic thin film transistor having small absolute value of threshold voltage and small hysteresis to be manufactured. An insulation layer material for organic thin film transistor of this invention contains a high-polymer compound (A) having a repeated unit having cyclic carbonate ester group and a repeated unit having a first functional group which can generates a second functional group by action of electromagnetic wave or heat to be reacted with active hydrogen, and an active hydrogen compound (B).

Description

201223979 六、發明說明：【發明所屬之技術領域】本發明係關於一種適用於有機薄膜電晶體所具有的絕緣層之絕緣層材料。【先前技術】有機薄膜電晶體，因可在比無機半導體更低溫下製造，故可使用塑膠基板及/或薄膜作為其基板，藉由使用如此的基板，可得具有可撓性、輕量且不易損壞的元件。而且，有藉由使用含有有機材料的溶液之塗佈和印刷法之成膜而可製作元件的情況，且有可在大面積的基板以低成本製造多數元件的情況。再者’由於在電晶體的檢討所可使用的材料之種類非常豐富，故若將分子構造相異的材料使用於檢討，即可製造具有寬廣範圍的特性變化之元件。在屬於有機薄膜電晶體的1種之場效型有機薄膜電晶體中，施加於閘極電極之電壓係經由閘極絕緣層而作用於半導體層，以控制汲極電流的電流量。因此，閘極電極與半導體層之間，形成有閘極絕緣層。而且，場效型有機薄膜電晶體的有機半導體層所使用的有機半導體化合物，容易受濕度、氧氣等環境的影響，電晶體特性容易發生因濕度、氧氣等所造成的歷時惡化。因此，由有機半導體化合物露出所構成的底閘極 (bottom gate)型有機薄膜電晶體元件構造中，必須形成覆蓋元件構造全體之覆蓋（overcoat)層，以保護有機半導體 3 323253 201223979 化合物使其不與外氣接觸。另一方面，頂閘極（top gate) 型有機薄膜電晶體元件構造中，有機半導體化合物係被閘極絕緣層覆蓋而被保護。如此，於有機薄膜電晶體中，為了形成覆蓋有機半導體層之覆蓋層及閘極絕緣層等，係使用絕緣層材料。於本說明書中，如前述覆蓋層及閘極絕緣層等有機薄膜電晶體的絕緣層或絕緣膜，係稱為有機薄膜電晶體絕緣層。而且，用以形成有機薄膜電晶體絕緣層的材料，係稱為有機薄膜電晶體絕緣層材料。對於有機薄膜電晶體絕緣層材料，係要求絕緣性及薄膜化時的絕緣破壞強度佳的特性。而且，特別是底閘極型場效電晶體中，有機半導體層係重疊於閘極絕緣層而形成。因此，對於閘極絕緣層材料，亦要求和用以與有機半導體層形成良好界面之有機半導體化合物的親和性、形成與有機半導體層的界面之膜表面的平坦度等特性。為了回應如此的要求，於專利文獻1，記載組合使用環氧樹脂與矽烷偶合劑以作為有機薄膜電晶體中之閘極絕緣層材料。由於若閘極絕緣層材料的吸濕性高，即會在電晶體功能的安定性發生問題，故為了解決該課題，其係使環氧樹脂的硬化反應時生成的羥基與矽烷偶合劑反應所成者。於非專利文獻1，記載使聚乙烯紛（polyvinylphenol) 與三聚氰胺化合物進行熱交聯而成的樹脂係用於閘極絕緣層。藉由以三聚氰胺交聯，而除去聚乙烯酚中所含之羥基， 4 323253 201223979 同時也提高膜強度。具有該閘極絕緣層的稠五笨TFT (pentacene th in-film transistor)(薄膜電晶體）係遲滯 ^ (hysteresis)小，對閘極偏壓（gate bias)應力顯示耐久 * 性。於非專利文獻2 ’記載使聚乙烯酚以及乙烯酚與甲基丙烯酸曱酯共聚合而成之共聚物係用於閘極絕緣層。乙烯酚的羥基與甲基丙烯酸甲酯的羰基相互作用，降低膜全體的極性。具有該閘極絕緣層的稠五苯TFT係遲滯小，顯示安定的電特性。 [先行技術文獻] [專利文獻] 專利文獻1 :日本特開2007-305950 [非專利文獻] 非專利文獻1 :應用物理信函（Appl. Phys. Lett. ) 89, 093507(2006) 非專利文獻2:應用物理信函（Appl. Phys. Lett. )92, 183306(2008) 【發明内容】 (發明所欲解決之課題）但是，考慮驅動如有機電激發光元件（有機EL元件）等發光元件等的實用化，必須使有機薄膜電晶體的動作精度更進一步提高，前述傳統的具有閘極絕緣層的有機薄膜電晶體，其臨限值電壓（Vth)的絕對值及遲滯大。本發明的目的在於提供可製造臨限值電壓的絕對值及 323253 201223979 遲滯小之有機薄膜電晶體之有機薄膜電晶體絕緣層材料。 (解決課題之手段）有鑑於以上之情事，進行各種檢討的結果，發現藉由使用具有碳酸酯部分且可形成交聯構造之特定的樹脂組成物來形成閘極絕緣層，即可使有機薄膜電晶體的臨限值電壓的絕對值及遲滯變小，因而完成本發明。亦即，本發明提供一種有機薄膜電晶體絕緣層材料，其包含：高分子化合物（A)，其含有式（1)所示的重複單元，並在分子内含有2個以上之第1官能基，其中，該第1官能基為藉由電磁波的照射或熱的作用而生成會與活性氫反應之第2官能基之官能基；201223979 VI. Description of the Invention: [Technical Field] The present invention relates to an insulating layer material suitable for an insulating layer of an organic thin film transistor. [Prior Art] Since an organic thin film transistor can be manufactured at a lower temperature than an inorganic semiconductor, a plastic substrate and/or a thin film can be used as a substrate thereof, and by using such a substrate, flexibility and lightness can be obtained. Components that are not easily damaged. Further, there are cases where an element can be produced by film formation by a coating and printing method using a solution containing an organic material, and a large number of substrates can be manufactured at a low cost. Furthermore, since the types of materials that can be used in the review of the transistor are extremely abundant, if a material having a different molecular structure is used for review, an element having a wide range of characteristic changes can be manufactured. In one type of field effect type organic thin film transistor belonging to an organic thin film transistor, the voltage applied to the gate electrode acts on the semiconductor layer via the gate insulating layer to control the amount of current of the gate current. Therefore, a gate insulating layer is formed between the gate electrode and the semiconductor layer. Further, the organic semiconductor compound used in the organic semiconductor layer of the field effect type organic thin film transistor is easily affected by environments such as humidity and oxygen, and the crystal characteristics are liable to deteriorate over time due to humidity, oxygen, and the like. Therefore, in the structure of a bottom gate type organic thin film transistor formed by exposing an organic semiconductor compound, it is necessary to form an overcoat layer covering the entire structure of the element to protect the organic semiconductor 3 323253 201223979 compound from being Contact with outside air. On the other hand, in the top gate type organic thin film transistor structure, the organic semiconductor compound is covered by the gate insulating layer and protected. As described above, in the organic thin film transistor, an insulating layer material is used in order to form a coating layer covering the organic semiconductor layer, a gate insulating layer, or the like. In the present specification, an insulating layer or an insulating film of an organic thin film transistor such as the above-mentioned cap layer and gate insulating layer is referred to as an organic thin film transistor insulating layer. Further, a material for forming an organic thin film transistor insulating layer is referred to as an organic thin film transistor insulating layer material. The organic thin film transistor insulating layer material is required to have excellent dielectric breakdown strength at the time of insulation and film formation. Further, in particular, in the bottom gate type field effect transistor, the organic semiconductor layer is formed by being superposed on the gate insulating layer. Therefore, for the gate insulating layer material, properties such as affinity with an organic semiconductor compound which forms a good interface with the organic semiconductor layer, and flatness of a film surface at the interface with the organic semiconductor layer are also required. In response to such a request, Patent Document 1 discloses the use of an epoxy resin and a decane coupling agent in combination as a material for a gate insulating layer in an organic thin film transistor. When the material of the gate insulating layer has high hygroscopicity, there is a problem in the stability of the function of the transistor. Therefore, in order to solve this problem, the hydroxyl group formed during the curing reaction of the epoxy resin is reacted with the decane coupling agent. Adult. Non-Patent Document 1 discloses that a resin obtained by thermally crosslinking a polyvinylphenol and a melamine compound is used for a gate insulating layer. The hydroxy group contained in the polyvinyl phenol is removed by crosslinking with melamine, and 4 323253 201223979 also increases the film strength. The pentacene th in-film transistor (thin film transistor) having the gate insulating layer is small in hysteresis, and exhibits durability against gate bias stress. Non-Patent Document 2 discloses that a copolymer obtained by copolymerizing polyvinylphenol and vinylphenol with methacrylic acid methacrylate is used for a gate insulating layer. The hydroxyl group of the vinyl phenol interacts with the carbonyl group of methyl methacrylate to lower the polarity of the entire film. The pentacene TFT having the gate insulating layer has a small hysteresis and exhibits stable electrical characteristics. [Prior Art Document] [Patent Document] Patent Document 1: JP-A-2007-305950 [Non-Patent Document] Non-Patent Document 1: Applied Physics Letter (Appl. Phys. Lett.) 89, 093507 (2006) Non-Patent Document 2 : Applied Physics Letters (Appl. Phys. Lett.) 92, 183306 (2008) [Problems to be Solved by the Invention] However, it is considered to drive a light-emitting element such as an organic electroluminescence element (organic EL element). In practical use, it is necessary to further improve the operational accuracy of the organic thin film transistor, and the organic thin film transistor having the gate insulating layer has a large absolute value and hysteresis of the threshold voltage (Vth). SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic thin film transistor insulating material which can produce an absolute value of a threshold voltage and an organic thin film transistor having a hysteresis of 323253 201223979. (Means for Solving the Problem) In view of the above, as a result of various reviews, it was found that the organic thin film can be formed by forming a gate insulating layer by using a specific resin composition having a carbonate portion and capable of forming a crosslinked structure. The absolute value of the threshold voltage of the transistor and the hysteresis become small, and thus the present invention has been completed. That is, the present invention provides an organic thin film transistor insulating layer material comprising: a polymer compound (A) containing a repeating unit represented by the formula (1) and containing two or more first functional groups in the molecule Wherein the first functional group is a functional group that generates a second functional group that reacts with active hydrogen by irradiation of electromagnetic waves or heat;

[式中，h表示氫原子或曱基；R2至R4為相同或相異，表示氫原子或碳數1至20的一價有機基；該一價有機基中的氫原子可被氟原子取代；Raa表示碳數1至20的二價有機基；該二價有機基中的氫原子可被氟原子取代；a表示0至20 的整數；Raa為複數個時，該等可為相同亦可為相異] 6 323253 201223979 以及化合物（B)(活性氫化合物（B))，其係選自由分子内含有2個以上活性氳之低分子化合物及分子内含有2個以上活性氩之高分子化合物所成群組中的至少1種。於一態樣中，前述高分子化合物（A)復含有··具有藉由電磁波的照射或電子線的能量之吸收而引起二聚化反應 (dimerization reaction)之官能基的重複單元。於一實施態樣中，前述具有藉由電磁波的照射或電子線的能量之吸收而引起二聚化反應之官能基的重複單元，係包含選自由式（2)所示的重複單元及式（3)所示的重複單元所成群組中之至少1種重複單元：Wherein h represents a hydrogen atom or a fluorenyl group; and R2 to R4 are the same or different, and represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; the hydrogen atom in the monovalent organic group may be substituted by a fluorine atom Raa represents a divalent organic group having 1 to 20 carbon atoms; a hydrogen atom in the divalent organic group may be substituted by a fluorine atom; a represents an integer of 0 to 20; and when Raa is plural, these may be the same It is a difference] 6 323253 201223979 and a compound (B) (active hydrogen compound (B)) selected from a low molecular compound containing two or more active oximes in a molecule and a polymer compound containing two or more active argon molecules in the molecule. At least one of the groups. In one aspect, the polymer compound (A) has a repeating unit having a functional group which causes a dimerization reaction by irradiation of electromagnetic waves or absorption of energy of electron beams. In one embodiment, the repeating unit having a functional group that causes a dimerization reaction by irradiation of electromagnetic waves or absorption of energy of an electron beam includes a repeating unit and a formula selected from the formula (2) ( 3) At least one repeating unit of the group of repeating units shown:

(2) [式中，R5表示氫原子或曱基；R表示氫原子或碳數1至20 的一價有機基；該一價有機基中的氫原子可被氟原子取代；Rbb表示碳數1至20的二價有機基；該二價有機基中的氫原子可被氟原子取代；b表示0至20的整數；c表示1 至5的整數；Rbb為複數個時，該等可為相同亦可為相異；R 為複數個時，該等可為相同亦可為相異；X表示氯原子、 7 323253 201223979 漠原子或碳原子](2) wherein R5 represents a hydrogen atom or a fluorenyl group; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; a hydrogen atom in the monovalent organic group may be substituted by a fluorine atom; and Rbb represents a carbon number a divalent organic group of 1 to 20; a hydrogen atom in the divalent organic group may be substituted by a fluorine atom; b represents an integer of 0 to 20; c represents an integer of 1 to 5; and when Rbb is plural, these may be The same may also be different; when R is plural, the same may be the same or different; X represents a chlorine atom, 7 323253 201223979 desert atom or carbon atom]

[式中，R6表示氫原子或甲基；R7至Rl3為相同或相異，表示氫原子或碳數1至20的一價有機基；該一價有機基中的氫原子可被氟原子取代；Ree表示碳數1至20的二價有機基；該二價有機基中的氫原子可被氟原子取代；d表示0 至20的整數；Ree為複數個時，該等可為相同亦可為相異]。於一態樣中，前述第1官能基係選自由被封阻劑 (b 1 ocking agent)封阻之異氰酸基與被封阻劑封阻之異硫氰酸基所成群組中的至少1種基。Wherein R6 represents a hydrogen atom or a methyl group; and R7 to Rl3 are the same or different, and represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; the hydrogen atom in the monovalent organic group may be substituted by a fluorine atom Ree represents a divalent organic group having 1 to 20 carbon atoms; a hydrogen atom in the divalent organic group may be substituted by a fluorine atom; d represents an integer of 0 to 20; and when Ree is plural, the same may be the same For the difference]. In one aspect, the first functional group is selected from the group consisting of an isocyanato group blocked by a blocking agent and an isothiocyanate group blocked by a blocking agent. At least 1 base.

於一態樣中，前述第1官能基為選自由式（4)所示之基以及式（5)所示之基所成群組中的至少1種基： μ X， π ιι —N—C-In one aspect, the first functional group is at least one group selected from the group consisting of the group represented by the formula (4) and the group represented by the formula (5): μ X, π ιι — N — C-

Rl5 (4) [式中，X’表示氧原子或硫原子；Rl4、Rl5為相同或相異，表示氫原子或碳數1至20的一價有機基] 8 323253 201223979Rl5 (4) [wherein, X' represents an oxygen atom or a sulfur atom; Rl4, Rl5 are the same or different, and represent a hydrogen atom or a monovalent organic group having a carbon number of 1 to 20] 8 323253 201223979

(5) :一 X表T氧原子或硫原子；R16JL Ru為相同或相異，表不虱原子或碳數丨至2G的—價有機基]。、炻雪:且、’本發明提供一種有機薄膜電晶體，其具備：源 ° 一 °二汲極電極、閘極電極、有機半導體層、以及使用任-種前财機薄膜電晶體絕緣層材料卿叙絕緣層。於一態樣中，前述絕緣層為閘極絕緣層。而且，本發明提供一種顯示器用構件，其包含前述有機薄膜電晶體。而且，本發明提供一種顯示器，其包含前述顯示器用構件。 (發明的效果）具有使用本發明的有機薄膜電晶體絕緣層材料所形成之絕緣層之有機薄膜電晶體，其臨限值電壓的絕對值及遲滯低。【實施方式】然後’更洋細說明本發明。而且’於本說明書’所謂「高分子化合物」係指分子内含有由複數個相同構造單元重複而成的構造之化合物，亦即，也包含所謂的二聚物。另一方面，所謂「低分子化合物」係指分子内不重複具有相同構造單元之化合物。 9 323253 201223979 本發明的有機薄膜電晶體絕緣層材料含有高分子化合物（A)以及活性氫化合物（B)。所謂活性氫，係指鍵結於如氧原子、氮原子及硫原子等碳原子以外的原子之氫原子。 [高分子化合物（A)] 高分子化合物（A)含有碳酸酯部分（-0-C0-0-)，且具有複數個當電磁波照射或熱進行作用時生成會與活性氬反應之第2官能基之第1官能基。藉由將碳酸酯部分導入至有機薄膜電晶體絕緣層材料中，例如將有機薄膜電晶體絕緣層材料使用於形成閘極絕緣層時，有機薄膜電晶體的臨限值電壓的絕對值或遲滯會降低，動作精度提高。而且，若導入碳酸酯部分，則有機薄膜電晶體絕緣層材料的介電常數（permittivity)增加，例如使用於形成閘極絕緣層時，變得容易提高有機薄膜電晶體的閘極電容，且變得容易降低有機薄膜電晶體的驅動電壓。而且，高分子化合物（A)所含有的第1官能基雖不與活性氫反應，但若對於第1官能基使電磁波照射或熱進行作用時，則會生成第2官能基，其會與活性氫反應。亦即，前述第1官能基係藉由電磁波或熱而脫保護，生成會與活性氫反應之第2官能基。第2官能基係與活性氫化合物（B) 的活性氫反應並鍵結，藉此而可在絕緣層内部形成交聯構造0 若在絕緣層内部形成交聯構造，則抑制絕緣層中分子的移動，抑制絕緣層的極化。使用被抑制極化之絕緣層作 10 323253 201223979 為例如閘極絕緣層時，有機薄膜電晶體的臨限值電壓的絕對值及遲滯降低，動作精度提高。第2官能基係在閘極絕緣層的形成少驟中施加電磁波或熱之前被封阻（block)，以第1官能基之形式存在於樹脂組成物中。結果，使樹脂組成物的貯存安定性提高。例如，具有包含含有環狀碳酸酯構造的基之重複單元以及包含前述第1官能基之重複單元的高分子化合物，係相當於高分子化合物（A)。包含含有環狀碳酸酯構造的基之重複單元，較理想為前述式（1)所示之重複單元。式（1)中，Ri表示氮原子或曱基。於一態樣中為氣原子。Raa表示碳數1至20的二價有機基。該二價有機基中的氫原子可被氟原子取代。a表示〇至20的整數。於一熊樣中，a為〇。 R2至R4為相同或相異’表示虱原子或碳數1至2〇的— 價有機基。該一價有機基中的氫原子可被氟原子取代。於一態樣中，R2至r4為氫原子。碳數1至20的/價有機基可為直鏈、分支狀、環狀的任一種’可為飽和，亦可為不飽和。碳數1至20的一價有機基可舉例如碳數丨至2〇的直鏈狀烴基、碳數3炱20的分支狀烴基、碳數3至2〇的環狀烴基、碳數6至20的芳香族烴基，較理想為碳數丨至^ 的直鏈狀烴基、碳數3至6的分支狀烴基、碳數3至6 環狀烴基、碳數6炱20的芳香族烴基。 323253 11 201223979 碳數1至20的直鏈狀烴基、碳數3至20的分支狀烴基、碳數3至20的環狀烴基中，該等基所含的氫原子可被氟原子取代。碳數6至20的芳香族烴基中的氫原子可被烷基、氣原子、漠原子、峨原子等取代。碳數1至20的一價有機基之具體例，可舉例如甲基、乙基、丙基、丁基、戊基、己基、異丙基、異丁基、第三丁基、環丙基、環丁基、環戊基、環己基、環戊烯基、環己烯基、三氟曱基、三氟乙基、苯基、萘基、蒽基、甲苯基、二曱苯基、二曱基苯基、三曱基苯基、乙基苯基、二乙基苯基、三乙基苯基、丙基苯基、丁基苯基、曱基萘基、二曱基萘基、三曱基萘基、乙烯基（vinyl)萘基、乙烯基 (ethenyl)萘基、曱基蒽基、乙基蒽基、氯苯基、溴苯基。碳數1至20的一價有機基較理想為烷基。前述碳數1至20的二價有機基可為直鏈、分支狀、環狀的任一種，可為脂肪族烴基，亦可為芳香族烴基，亦可含有氮原子、氧原子、硫原子等雜原子。可舉例如碳數1 至20的二價直鏈狀脂肪族烴基、碳數3至20的二價分支狀脂肪族烴基、碳數3至20的二價環狀脂肪族烴基、碳數 6 至 20 的二價芳香族烴基、-0-C0-、-0-、-CO-NH-、-NH-CO- NH---NH-CO-O-。該等基亦可具有取代基。其中，以碳數 1至6的二價直鏈狀脂肪族烴基、碳數3至6的二價分支狀脂肪族烴基、碳數3至6的二價環狀脂肪族烴基、二價的碳數6至20的芳香族族烴基、-0-C0-較理想。 12 323253 201223979 二價脂肪族烴基以及二價環狀烴基的具體例，可舉例如亞甲基（贴1：11乂16116)、伸乙基（6让716116)、伸丙基、伸丁基、伸戊基、伸己基、伸異丙基、伸異丁基、二甲基伸丙基、伸環丙基、伸環丁基、伸環戊基、伸環己基、亞胺基亞甲基、羰基亞胺基亞甲基、亞胺基羰基亞胺基亞曱基、氧亞甲基、氧羰基亞甲基、羰基氧亞甲基等。碳數6至20的二價芳香族烴基的具體例，可舉例如伸笨基、伸萘基、伸蒽基、二甲基伸苯基、三曱基伸苯基、伸乙基伸苯基、二伸乙基伸苯基、三伸乙基伸苯基、伸丙基伸苯基、伸T基伸苯基、？基伸萘基、二f基伸蔡基、三甲基伸萘基、乙稀基（vinyl)伸萘基、乙烯基（以) 伸萘基、f基伸蒽基、6基伸蒽基、亞絲伸笨基、艘基亞胺基伸苯基、亞胺基羰基亞胺基伸苯基、氧羰基伸苯基、羰基氧伸苯基等。而且，前述第 s此丞的較佳例可舉例如被封阻劑封阻之異氰酸基與被封阻劑封阻之異硫氰酸基。前述被封阻劑封阻之異氰酸基與被封阻 r基’可藉由使在1分子中只具有1個可=基: 異硫氰酸基反紅活減的雜劑、與錢縣或異硫氛酸基進行反應而製造。前述封阻劑係以即使與異氰酸基或異硫氛酸基反應後’亦會在17G°C以下的溫度解離者為較理想1封_可舉例如醇系化合物、酚（phenol)系化合物、活性亞曱基系化合物、硫醇（mecaptan)系化合物、醯胺系化合物、^亞 323253 13 201223979 =Γ、味唾系化合物、尿素系化合物、肪(。―) (biJm、)胺系化合物、亞胺系化合物、重亞硫酸鹽 (b1Sulflte)、％啶系化合物、心（_ 該等封阻劑可單獨使用，亦可混合2種以上使封阻劑可舉例如肟系化合物、吡唑系化合物。較隹的以下，例示具體的封阻劑。醇系化合物可舉例如甲醇、乙醇、_、丁醇、2一乙基己醇、甲基赛路蘇㈤邮〇 ^ 丁基赛路蘇、甲基卡必醇（methyl Μ01)、笨甲醇、環己醇等。盼系化合物可舉例如紛、甲盼、乙基m壬絲、二壬絲、苯盼、經基苯甲酸㈣。活性亞甲基系化合物可舉例如丙二酸二甲醋、丙二酸二乙醋、乙醯乙酸甲酉旨、乙酿乙酸乙醋、乙醯丙酮等。硫醇系化合物可舉例如丁硫醇、十二美矻醇 (dodecWptan)等。醯胺系化合物可舉例如^:苯 (acetanilide)、乙醯胺、ε-己内醯胺、占―戊内醯胺、了 -丁内醯胺等，醢亞胺系化合物可舉例如琥珀醯亞胺、順丁烯二醯亞胺Onaleimide)等。咪唑系化合物可舉例如咪唑、 2-曱基咪唑等。尿素系化合物可舉例如尿素、硫脲 (thiourea)、伸乙基脲（ethyleneurea)。肟系化合物可舉例如甲醛肟（foraldoxime)、乙醛肟、丙酮肟、曱基乙基嗣躬、環己酮躬Γ專。胺系化合物可舉例如二苯基胺、苯胺、咔唑等。亞胺系化合物可舉例如伸乙基亞胺、聚伸乙基亞胺等。重亞硫酸鹽可舉例如重亞硫酸鈉等。吡啶系化合物可舉例如2-經基°比咬、2-經基啥淋（2-hydoxyquinoline) 14 323253 201223979 等。吼唾（pyraz〇le)系化合物可舉例如3 5_二曱基处嗓 3, 5-一乙基π比唾。 ύ^ _ 可用於本發明中之被封阻劑封阻之異氰酸基或異# & ·· 酸基’係以前述式（4)所示的基或前述式（5)所示的基較理想。式（4)及式（5)中’ X，表示氧原子或硫原子，至尺為相同或相異，表示氫原子或碳數1至2〇的一價有機基: "ί貝有機基的定義、具體例等，係與前述一價有機基的^ 義、具體例等相同。於一態樣中，心及R1S為相同或相異，為選自曱基及己基所成群組中的基。而且，於另一態樣中，{^至Ru為氣原 -^Ρ* 〇被封阻劑封阻之異氰酸基，可舉例如〇-(亞甲基羧基胺基、0-(1-亞乙基胺基）羧基胺基、0-(1-曱基亞乙烏胺基）羧基胺基、0-[1-甲基亞丙基胺基]羧基胺基、^ 二曱基吡唑基羰基）胺基、（N-3-乙基-5-曱基吡唑基纖基彡胺基、（N-3,5-二乙基吡唑基羰基）胺基、（N-3-丙基〜5、甲基吡唑基羰基）胺基、（N-3-乙基-5-丙基吡唑基羰基）胺烏等。土被封阻劑封阻之異硫氰酸基，可舉例如〇-(亞甲基月安基）硫羧基胺基、0-(1-亞乙基胺基）硫羧基胺基、〇-(1 一甲基亞乙基胺基）硫叛基胺基、0-[1-曱基亞丙基胺基]硫叛基胺基、（N-3,5-二曱基吡唑基硫羰基）胺基、（N-3-乙基-5-曱基吡唑基硫羰基）胺基、（N-3, 5-二乙基吡唑基硫羰基） 15 323253 201223979 胺基、（N-3-丙基-5-曱基吡唑基硫羰基）胺基、（N_3_乙美 -5-丙基吡唑基硫羰基）胺基等。本發明所使用之第1官能基較理想為被封阻劑封阻之異氰酸基。高分子化合物（A) ’係以復具有複數個藉由電磁波照射或電子線的能量之吸收而引起二聚化反應之官能基（本說明書中稱為「光二聚化反應基」）為較理想。藉由併用2種交聯之機制’而變得容易提高有機薄膜電晶體絕緣層材料的交聯密度。光二聚化反應基所吸收之電磁波若為能量太低時，則在藉由光聚合法形成有機薄膜電晶體絕緣層材料時，有時光二聚化反應基也會反應’所以，以高能量的電磁波較理想。光二聚化反應基吸收之較佳電磁波為紫外線，例如波長400nm以下，較理想為150至380nm的電磁波。此處，所謂二聚化係指2個有機化合物分子以化學方式鍵結。鍵結的分子彼此可為同種，亦可為不同種。二聚化的2個分子中參與二聚化的官能基彼此的化學構造可為相同，亦可為相異。但是，該官能基係以在不使用觸媒及起始劑等反應助劑下即產生二聚化反應的構造及組合為較理想。此係由於若接觸反應助劑的殘基則可能使周圍的有機材料劣化之故。較理想的光二聚化反應基的例為氫原子被鹵甲基取代之芳基、2位的氫原子被芳基取代之乙烯基、万位的氫原子被芳基取代之α，万-不飽和数基、石位的氫原子被芳基 323253 16 201223979 I，t不飽和m氧基。其中，較理想為氫原子« 二彳、之本基、2位的A原子被苯絲代之乙稀基、々 =的=子被笨基取代之α^_不飽和縣1位的氮原 ^取代U，不飽和錄基。重複單元的側鏈基分二月結為方基時，則對於如有機半導體等其他有機 f斗的親和性提高，變得㈣相減絕緣層的露出面而形成平坦的層。氫原子被自甲基取代之芳基在照射紫外線或電子線時，函素會脫離’而生成苯甲基型之碳自由基 carboradieal)。生成的2個碳自由基結合時，形成碳_ 炭鍵、。使有機溝膜電晶體絕緣層材料交聯。前述碳自由 ^的結合為所謂「自由基偶合」H關於2位的氮原子 «㈣基、⑽的氫料财絲代m 3和m基1位的氫原子被芳基取代之α，厂不飽和m 氧當照射紫外線或電子線時，會產生2+2環化反應，使有機薄膜電晶體絕緣層材料交聯。特別理心的光一聚化反應基為々位的氮原子被芳基取 /3不飽和幾氧基。該等基係感度較高，不需為了形成交聯構造而照射長時_紫外線或電子線。八有光-聚化反應基的重複單元係以前述式⑵所示的重複單元、前料⑶料的魏單元較理想。 =⑵及式（3)中，&及Re為相同或相異，表示氫原子或甲=:態樣中’^為氣原子，於其他一態樣中， 6 '虱’、^及Rcc為相同或相異，表示碳數1至20的 323253 17 201223979 二價有機基。該二價有機基中的氫原子可被氟原子取代。b 及d表示0至20的整數。b及d可為相異的數值。於一態樣中，b為0。於其他一態樣中，d為1，Rcc為-0-C0-。 X表示氯原子、溴原子或碘原子。於一態樣中，X為氣原子。 c表示1至5的整數。於一態樣中，c為1。 R、R7至R13為相同或相異，表示氫原子或碳數1至20 的一價有機基。該一價有機基中的氫原子可被氟原子取代。於一態樣中，R為氫原子。於其他一態樣中，R?至R13 為氫原子。 R、R7至R13所示的碳數1至20的一價有機基之具體例，可舉例如與r2所示的碳數1至20的一價有機基之具體例相同的基。Rbb、Rcc所示的碳數1至20的二價有機基之具體例，可舉例如與Raa所示的碳數1至20的二價有機基之具體例相同的基。高分子化合物（A)可藉由例如將式（1)所示的重複單元的原料之聚合性單體以及含有第1官能基之聚合性單體，使用光聚合起始劑或熱聚合起始劑以進行共聚合的方法而製造。高分子化合物（A)含有光二聚化反應基時，亦可使式 (2)所示的重複單元的原料之聚合性單體或式（3)所示的重複單元的原料之聚合性單體進行共聚合。式（1)所示的重複單元的原料之聚合性單體，可舉例如 4_乙稀基-1,3-二氧雜環戊烧（dioxolan)-2-酮、4-丙稀醯氧基曱基-1,3-二氧雜環戊烷-2-酮、4-甲基丙烯醯氧基曱 18 323253 201223979 基-1，3-二氧雜環戊烷-2-酮等。式（2)所示的重複單元的原料之聚合性單體，可舉例如 3-氯甲基苯乙烯、4-氯曱基苯乙烯、3-溴曱基苯乙烯、4-溴甲基苯乙烯等。式（3)所示的重複單元的原料之聚合性單體，可舉例如桂皮酸乙浠醋（viny 1 cinnamate)、曱基丙烯酸桂皮酉旨、曱基丙烯酸桂皮醯氧基（cinnamoyloxy)丁酯、甲基丙烯酸桂皮基亞胺基氧基亞胺基乙酯等。含有第1官能基之聚合性單體，可舉例如分子内具有被封阻劑封阻之異氰酸基或被封阻劑封阻之異硫氰酸基以及不飽和鍵的單體。該分子内具有被封阻劑封阻之異氰酸基或被封阻劑封阻之異硫氰酸基以及不飽和鍵結的單體，可藉由使分子内具有異氰酸基或異硫氰酸基以及不飽和鍵的化合物與封阻劑反應而製造。不飽和鍵較理想為不飽和雙鍵。以下，除非特別指出，則所謂聚合性單體係指含有不飽和鍵之單體化合物。不飽和鍵較理想為不飽和雙鍵。分子内具有不飽和雙鍵與異氰酸基之化合物，可舉例如異氰酸2-丙烯醯氧基乙酯、異氰酸2-曱基丙烯醯氧基乙酯、異氰酸2-(2’_甲基丙烯醯氧基乙基）氧乙酯等。分子内具有不飽和雙鍵與異硫氰酸基之化合物，可舉例如異硫氰酸2-丙烯醯氧基乙酯、異硫氰酸2-曱基丙烯醯氧基乙酯、異硫氰酸2-(2’ -甲基丙烯醯氧基乙基）氧乙酯等。聚合性單體所含的封阻劑，可適合使用前述的封阻 19 323253 201223979 劑。分:内具有被封阻劑封阻之異氰酸基或被封阻劑封阻之異硫鼠酸基以及不飽和鍵之單體在製造時，可依而添加有機溶劑、觸媒等。要前述分子内具有被封阻劑封阻之異氰酸基以及不飽和雙鍵之單體，可舉例如甲基㈣酸基亞丙基胺基]羧基胺基]乙酯、甲基丙烯酸，—二曱基吡唑基]羧基胺基]乙酯等。 & 前述分子内具有被封阻劑封阻之異硫氰酸基以及不飽和雙鍵之單體，可舉例如甲基丙烯酸2_[〇一[1，_曱基亞丙基胺基]硫羧基胺基]乙酯、曱基丙烯酸2_^_[1，，3，一二甲基吡唑基]硫羧基胺基]乙^旨等。 ’ 前述光聚合起始劑可舉例如：苯乙酮、2,2_二曱氧基 -2-苯基苯乙酮、2,2-二乙氧基苯乙酮、4_異丙基_2_羥基 -2-曱基苯丙酮、2-羥基·~2-曱基苯丙酮、4, 4, _雙（二乙基胺基）二苯基酮、二苯基酮、甲基（鄰苯曱醯基）苯曱酸酯、 1-苯基-1,2-丙二酮-2-(0-乙氧基羰基）肟、卜苯基_丨，2一丙一_一2-(鄰苯曱醯基）聘、安息香（benzoin)、安息香甲基醚、安息香乙基醚、安息香異丙基醚、安息香異丁基醚、安息香辛基醚、二苯基乙二酮（benzil)、二苯基乙二_二甲基縮酮（benzildimethylketal)、二苯基乙二鲖二乙基縮酮、聯乙醯（diacetyl)等羰基化合物；曱基蒽醌、氣蒽醌、氣硫雜蒽酉同（chlorothioxanthone)、2-曱基硫雜蒽酿|、2-異丙基硫雜蒽酮等蒽醌或硫雜蒽酮衍生物；二硫化二苯、二硫胺甲酸醋（dithiocarbamate)等硫化合物。 20 323253 201223979 使用光能量作為起始共聚合的能量時，照射於聚合性單體之光的波長為360nm以上，較理想為36〇至45〇nm。前述熱聚合起始劑只要是自由基聚合的起始劑即可，可舉例如.2, 2 -偶氮雙異丁腈、2, 2’ _偶氮雙異戊腈、2, 2，— 偶氣雙（2’4-二曱基戊腈）、4,4’_偶氮雙（4_氰基戊酸）、 1，1 -偶氮雙（％己腈）、2, 2,-偶氮雙（2-曱基丙烷）、2, 2,-偶氮雙（2_曱基丙脒）（2,2,iZ(Dbis(2_ methylpropionamidine)) 2鹽酸鹽等偶氮系化合物；過氧化曱基乙基酮氧化曱基異丁基嗣、過氧化環己_、過氧化乙醯丙酮等過氧化酮類；過氧化異丁基、過氧化苯甲醯基過氧化2,4—氯笨甲醯基、過氧化鄰甲基苯甲酿基、過氧化月桂醯基、過氧化對氣苯甲醯基等過氧化二醯基類；2, 4’4_三曱基戊基-2〜過氧化氫、二異丙基苯過氧化氫、異丙苯過氧化氫、第三丁基過氧化氫等過氧化氮類；過氧化二異丙苯、過氧化第三丁基異内笨、過氧化二第三丁基、三（第三丁基過氧化）三哄等過氧化二院基類卟卜二第三丁基過氧化環己燒、2,2-二（第三丁基過氧化）丁烧等過氧化縮酮類；過氧化新戊酸第三丁則tert-butyl peroxypivalate)、過氧化_2-乙基己酸第三丁醋、過氧化異丁酸第二丁醋、過氧化六氫對苯二甲酸二第三丁醋、過氧化壬二酸二第三丁酉旨、過氧化3, 5，基醋、過^乙酸第三丁酉旨、過氧化笨甲酸第三丁醋、魏 =甲三^等烧基過氧化_;過氧化二滅一異㈣、魏化二碳酸二第二丁自旨、過氧化異丙基 323253 21 201223979 碳酸第三丁酯等過氧化碳酸酯類。本發明所使用的高分子化合物（A)，係可於聚合時添加除了式（1)所示的重複單元的原料之聚合性單體、式（2)所示的重複單元的原料之聚合性單體、式（3)所示的重複單元的原料之聚合性單體、含有第1官能基的聚合性單體以外的其他可聚合的單體，而予以製造。其他可聚合的單體，可舉例如丙烯酸酯及其衍生物、甲基丙烯酸酯及其衍生物、苯乙烯及其衍生物、乙酸乙烯酯及其衍生物、曱基丙烯腈及其衍生物、丙烯腈及其衍生物、有機羧酸的乙烯酯及其衍生物、有機羧酸的烯丙酯及其衍生物、反丁烯二酸的二烷酯及其衍生物、順丁烯二酸的二烧酯及其衍生物、亞甲基丁二酸（itaconic acid)的二烷酯及其衍生物、有機羧酸的N-乙烯基醯胺衍生物、順丁烯二醯亞胺及其衍生物、末端不飽和烴及其衍生物等、有機錯衍生物等。其他可聚合的單體的種類，係依據絕緣層所要求的特性而適當選擇。從較佳的耐久性及使有機薄膜電晶體的遲滯變小的觀點來看，則選擇如苯乙烯、苯乙烯衍生物等分子密度高且形成硬膜之單體。而且，從對於閘極電極及基板之表面等絕緣層的鄰接面之密合性的觀點來看，則選擇如曱基丙烯酸酯及其衍生物、丙烯酸酯及其衍生物般賦予柔軟性之單體。於較佳的一態樣中，選擇不具有如甲基、乙基等烷基般之含活性氫的基之單體。例如，除了式（1)所示的重複單元的原料之聚合性單 22 323253 201223979 體、式（2)所示的重複單元的原料之聚合性單體、式（3)所示的重複單元的原料之聚合性單體、含有第〖官能基的聚合性單體料，藉由組合不含雜氫的苯乙烯絲乙缔衍生物以使用於反應’即得到耐久性特別高、遲滞小的閉極絕緣層。丙烯酸酯及其衍生物，可使用單官能基的丙烯酸酯、或使用量有限制之多官能基丙烯酸酯，可舉例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸正丙酯、丙烯酸異丙酯、丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸第二丁酯、丙烯酸己酯、丙烯酸辛酯、丙烯酸2-乙基己酯、丙烯酸癸酯、丙烯酸異冰片酯、丙烯酸環己酯、丙烯酸苯酯、丙烯酸苯曱酯、丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、丙烯酸3_羥基丙酯、丙烯酸2-羥基丁酯、丙烯酸2-羥基苯基乙酯、乙二醇二丙烯酸酯、丙二醇二丙烯酸酯、1，4-丁二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、三羥曱基丙烷二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、新戊四醇五丙烯酸酯（pentaerythritol pentaacrylate)、丙烯酸 2, 2, 2- 三氟乙酯、丙烯酸2, 2, 3, 3, 3-五氟丙酯、丙烯酸2-(全氟丁基）乙酯、丙烯酸3-全氟丁基-2-羥基丙酯、丙烯酸2-(全氟己基）乙酯、丙烯酸3-全氟己基-2-羥基丙酯、丙烯酸2-(全氟辛基）乙酯、丙烯酸3-全氟辛基-2-羥基丙酯、丙烯酸2-(全氟癸基）乙酯、丙烯酸2-(全氟-3-甲基丁基）乙酯、丙烯酸3-(全氟-3-曱基丁基）-2-羥基丙酯、丙烯酸2-(全氟-5-曱基己基）乙醋、丙稀酸2-(全氟-3-曱基丁基）-2- 23 323253 201223979 羥基丙酯、丙烯酸3-(全氟-5-曱基己基）-2-羥基丙酯、丙烯酸2-(全氟-7-曱基辛基）乙酯、丙稀酸3-(全氟甲基辛基）-2-羥基丙醋、丙烯酸1H，1H，3H-四氟丙酯、丙烯酸 1H，1H，5H-八氟i戊醋、丙婦酸1H，1H，7H-十二氟^庚g旨、丙稀酸1H，1H，9H-十六氟壬酯、丙烯酸(三氟曱基）三氟乙醋、丙烯酸1H，1H，3H-六氟丁酯、n，N-二曱基丙烯醯胺、 N，N-二乙基丙烯醯胺、N-丙烯醯基嗎淋。甲基丙烯酸酯及其衍生物，可使用單官能基的甲基丙烯酸酯、或使用量有限制之多官能基曱基丙烯酸酯，可舉例如甲基丙烯酸甲酯、曱基丙烯酸乙酯、甲基丙烯酸正丙酯、曱基丙稀酸異丙酯、曱基丙烯酸正丁酯、曱基丙烯酸異丁酯、曱基丙烯酸第二丁酯、曱基丙烯酸己酯、曱基丙烯酸辛酯、曱基丙烯酸2-乙基己酯、甲基丙烯酸癸酯、曱基丙浠酸異冰片酯、甲基丙烯酸環己酯、曱基丙烯酸苯酯、甲基丙烯酸苯甲酯、甲基丙烯酸2-羥基乙酯、甲基丙烯酸 2-羥基丙酯、甲基丙烯酸3_羥基丙酯、曱基丙烯酸2_羥基丁酯、曱基丙烯酸2-羥基苯基乙酯、乙二醇二甲基丙烯酸酯、丙一醇二曱基丙烯酸酯、1，4-丁二醇二甲基丙烯酸酯、二乙二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、三羥甲基丙烷二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酉日、新戊四醇五甲基丙稀酸酯（pentaerythrit〇l pentamethacrylate)、甲基丙烯酸2,2,2_三氟乙酯、甲基丙烯酸2, 2, 3, 3, 3-五氟丙酯、甲基丙烯酸2-(全氟丁基）乙酯、罗基丙烯酸3-全氟丁基-2-羥基丙酯、罗基丙烯酸 323253 24 201223979 2-（全氟己基）乙酯、甲基丙烯酸3_全氟己基_2_羥基丙酯、甲基丙烯酸2-(全氟辛基）乙酯、甲基丙烯酸3_全氟辛基 -2-羥基丙酯、曱基丙烯酸2-(全氟癸基）乙酯、甲基丙烯酸2-(全氟-3-甲基丁基）乙酯、甲基丙烯酸3-(全氟-3_甲基丁基）-2-羥基丙酯、甲基丙烯酸2-(全氟-5-曱基己基）乙酯、甲基丙烯酸2-(全氨-3-甲基丁基）-2-羥基丙酯、甲基丙烯酸3-(全就-5-甲基己基）-2-經基丙酯、甲基丙浠酸 2-(全氟-7-甲基辛基）乙酯、曱基丙烯酸3-(全氟-7-甲基辛基）-2-羥基丙酯、甲基丙烯酸in, 1H，3H-四氟丙酯、甲基丙烯酸1H，1H，5H-八氟戊酯、曱基丙烯酸1H, 1H，7H-十二氟庚酯、曱基丙烯酸1H, 1H，9H-十六氟壬酯、曱基丙烯酸 1H-1-(三氟曱基）三氟乙酯、甲基丙烯酸iH，1H，3H-六氟丁酯、N，N-二甲基甲基丙烯醯胺、Ν,Ν-二乙基甲基丙烯醯胺、 Ν-丙稀醯基嗎琳。苯乙烯及其衍生物，可舉例如苯乙烯、2, 4-二曱基-甲基苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、2, 4-二曱基苯乙烯、2, 5-二曱基苯乙烯、2,6-二曱基苯乙烯、3, 4-二曱基苯乙烯、3, 5-二甲基苯乙烯、2, 4, 6-三甲基苯乙烯、2, 4,5-三曱基苯乙烯、五甲基苯乙烯、鄰乙基苯乙烯、間乙基苯乙烯、對乙基苯乙烯、鄰氣苯乙烯、間氣苯乙烯、對氣苯乙烯、鄰溴苯乙烯、間溴苯乙烯、對溴苯乙烯、鄰甲氧基苯乙烯、間曱氧基苯乙烯、對甲氧基苯乙烯、鄰羥基苯乙烯、間羥基苯乙烯、對羥基笨乙烯、 2-乙烯基聯苯、3-乙烯基聯苯、4-乙烯基聯苯、卜乙烯基 25 323253 201223979 萘、2-乙烯基萘、4-乙烯基-對-聯三苯、1-乙烯基蒽、α-曱基苯乙烯、鄰異丙烯基曱苯、間異丙烯基甲苯、對異丙烯基曱苯、2,4-二甲基-〇；-曱基苯乙烯、2,3-二曱基-〇:-曱基苯乙烯、3, 5-二曱基-〇；-曱基苯乙烯、對異丙基-α-曱基苯乙烯、α-乙基苯乙烯、氣苯乙烯、二乙烯基苯、二乙烯基聯苯、二異丙基苯、4-胺基苯乙烯等。丙稀腈及其衍生物可舉例如丙烯腈等。曱基丙稀腈及其衍生物可舉例如甲基丙烯腈等。有機羧酸的乙烯酯及其衍生物，可舉例如乙酸乙稀酯、丙酸乙烯酯、丁酸乙烯酯、苯甲酸乙烯酯、己二酸二乙烯酯等。有機羧酸的烯丙酯及其衍生物，可舉例如乙酸稀丙酯、苯甲酸烯丙酯、己二酸二烯丙酯、對笨二曱酸二稀丙酯、間苯二曱酸二烯丙酯、鄰苯二曱酸二烯丙醋等。反丁稀一酸的·一院醋及其衍生物’可舉例如反丁稀二酸二曱酯、反丁烯二酸二乙酯、反丁烯二酸二異丙酯、反丁烯二酸二第二丁酯、反丁烯二酸二異丁酯、反丁稀二酸二正丁酯、反丁烯二酸二2-乙基己酯、反丁烯二酸二苯曱酯等。順丁烯二酸的二烷酯及其衍生物，可舉例如順丁稀二酸二甲酯、順丁烯二酸二乙酯、順丁烯二酸二異丙酯、順丁稀一一第二丁、順丁稀一酸二異丁 .1旨、順丁婦二酸一正丁酯、順丁烯二酸二2-乙基己酯、順丁烯二酸二酯等。一 323253 26 201223979 亞曱基丁二酸的二烷酯及其衍生物，可舉例如亞甲基丁二酸二曱酯、亞曱基丁二酸二乙酯、亞甲基丁二酸二異丙酯、亞曱基丁二酸二第二丁酯、亞曱基丁二酸二異丁酯、亞甲基丁二酸二正丁酯、亞曱基丁二酸二2-乙基己酯、亞甲基丁二酸二苯曱酯等。有機羧酸的N-乙烯基醯胺衍生物，可舉例如N-曱基 -N-乙烯基乙醯胺等。順丁烯二醯亞胺及其衍生物，可舉例如N-苯基順丁烯二醯亞胺、N-環己基順丁烯二醯亞胺等。末端不飽和烴及其衍生物，可舉例如1 - 丁烯、1 -戊烯、 1-己浠、1-辛烯、乙烯基環己烧、氯化乙烯、烯丙醇等。有機鍺衍生物可舉例如婦丙基三曱基鍺、烯丙基三乙基鍺、烯丙基三丁基鍺、三甲基乙烯基鍺、三乙基乙烯基鍺等。該等之中，較理想為丙婦酸烧自旨、曱基丙烯酸烧醋、苯乙烯、丙烯腈、甲基丙烯腈、烯丙基三曱基鍺。前述式（1)所示的重複單元的原料之聚合性單體的使用量，係調節使導入高分子化合物（A)中的碳酸酯部分的量成為適量。導入高分子化合物（A)中的式（1)所示的重複單元的量，相對於高分子化合物（A)所具有之重複單元的合計，較理想為1至80莫耳％，更理想為5至70莫耳％，再更加理想為10至60莫耳％。於較佳的一態樣中，導入高分子化合物（A)中的式（1) 27 323253 201223979 所示的重複單元的量，相對於高分子化合物（A)所具有之重複單元的合計，較理想為10至90莫耳％，更理想為30至 85莫耳％，更加理想為45至75莫耳％。式（1)所示的重複單元的量未達1莫耳％時，使場效型有機薄膜電晶體的遲滯降低的效果不足，超過90莫耳％時，與有機半導體材料的親和性惡化，難以將活性層積層於其上。製造高分子化合物（A)時，含有被封阻劑封阻之異氰酸基或被封阻劑封阻之異硫氰酸基之聚合性單體的放入莫耳比例，在全部參與聚合之聚合性單體中為5至50莫耳％，較理想為5至40莫耳％，更理想為10至30莫耳％。藉由將前述聚合性單體的放入莫耳比例調節成該範圍，在絕緣層内部即充分形成交聯構造，使極性基的含量保持低的程度，抑制絕緣層的極化。當高分子化合物（A)包含選自由式（2)所示的重複單元及式（3)所示的重複單元所成群組中的至少1種重複單元時，以式（1)所示的重複單元的數目作為100時，式（2)所示的重複單元的數目及式（3)所示的重複單元的數目之合計為100以下，例如5至100，較理想為10至100，更理想為10至50，更加理想為10至20。該數目的合計起過 100時，保存安定性降低。高分子化合物（A)，其重量平均分子量可為3000至 1000000，較理想為5000至500000，更理想為10000至 100000，例如20000至80000。重量平均分子量係例如藉 28 323253 201223979 由使用聚苯乙烯作為基準並進行換算而決定。高分子化入物（A)可為直鏈狀、分支狀、環狀的任一種。含有本發明所使用的式（1)所示的重複單元，且分子内含有2個以上藉由電磁波照射或熱的作用而會生成與活性氫反應的第2官能基之第丨官能基的高分子化合物了可舉例如聚（4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚〜[甲其丙烯酸2-[0-(Γ-甲基亞丙基胺基）羧基胺基]乙酯])、^^_ 乙烯基-1,3-二氧雜環戊烷—2-酮-共聚-[甲基丙烯酸2_ [1’ -(3’，5’-二甲基吡唑基）羧基胺基]乙酯])、聚（笨乙烯一共聚-3-氣甲基笨乙烯-共聚_4-乙稀基-1，3-二氧雜環戊烧 -2-酮-共聚-[曱基丙烯酸2-[〇_(1，_曱基亞丙基胺基）羧基胺基]乙酯])、聚（苯乙烯-共聚—3-氯曱基笨乙烯-共聚-4-乙烯基-1,3-二氧雜環戊烷-2-酮-共聚-[甲基丙烯酸ζ-ΐΤ -(3’ ， 5’ -二甲基吡唑基）敌基胺基] 乙酯])、聚（苯乙烯一共聚-3-氯曱基苯乙烯-共聚-4-乙烯基-1，3-二氧雜環戊烷 -2-酮-共聚-丙烯腈-共聚-[甲基丙烯酸2-[〇-(Γ -曱基亞丙基胺基）羧基胺基]乙酯])、聚（苯乙烯-共聚-3-氯曱基苯乙烯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-丙烯腈-共聚-[甲基丙烯酸2-[1’ -(3,，5,-二甲基吡唑基）羧基胺基]乙酯])、聚（苯乙烯-共聚-3-氯曱基苯乙烯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-丙烯腈-共聚-[曱基丙烯酸2-[0-(1’ -曱基亞丙基胺基）羧基胺基]乙酯]一共聚-烯丙基三曱基鍺）、聚（笨乙烯一共聚_3一氯曱基苯乙烯一共聚-4-乙烯基-1，3-二氧雜環戊烷_2_酮-共聚-丙烯腈—共 29 323253 201223979 聚-[曱基丙烯酸2-[Γ -(3,，5’ -二曱基吡唑基）羧基胺基] 乙酯]-共聚-烯丙基三曱基鍺）、聚（3-氣曱基苯乙烯-共聚 -4-乙烯基-1，3-二氧雜環戊烧-2-酮-共聚-[曱基丙烯酸2-[0-(Γ-曱基亞丙基胺基）羧基胺基]乙酯])、聚（3-氣曱基苯乙烯-共聚-4-乙烯基-1,3-二氧雜環戊烷-2-酮-共聚-[甲基丙烯酸2-[1’ -（3’，5’ -二曱基吡唑基）羧基胺基]乙 §曰])、1(4-乙婦基-1，3_* —氧雜壤戊烧ϋ同-共聚-4-氯甲基苯乙稀-共聚-[曱基丙烯酸2-[0-(Γ -甲基亞丙基胺基）羧基胺基]乙酯])、聚（4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-4-氯曱基笨乙稀-共聚-[曱基丙烯酸2-[1，-(3,，5’ -二甲基》比唑基）羧基胺基]乙酯])、聚（4一乙烯基-^—二氧雜環戊烧-2-酮-共聚-3-氣甲基苯乙烯-共聚-4-氣曱基苯乙烯-共聚-五氟苯乙烯-共聚-[甲基丙烯酸2-[〇-(1’ _甲基亞丙基胺基）缓基胺基]乙酯])、聚（苯乙稀-共聚-桂皮酸乙烯酯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-[曱基丙烯酸2-[0-(Γ-曱基亞丙基胺基）羧基胺基]乙酯])、聚（苯乙烯-共聚-桂皮酸乙烯酯-共聚_4-乙烯基_丨，3_二氧雜環戊烧-2-_-共聚-[曱基丙烯酸2-[1，_(3，，5，-二曱基吡唑基）羧基胺基]乙酯])、聚（苯乙烯-共聚—桂皮酸乙烯酯 -共聚-4-乙稀基-1，3-一氧雜環戊烧-2-酮-共聚-丙烯腈一共聚-[甲基丙稀酸2-[0-(1’ -甲基亞丙基胺基）叛基胺基] 乙酯])、聚（苯乙烯-共聚-桂皮酸乙烯酯-共聚_4—乙烯基 -1，3-二氧雜環戊烷-2-酮-共聚-丙烯腈-共聚-[曱基丙烯酸2-[1’ -(3,，5’ -二曱基吡唑基）羧基胺基]乙酯])、聚（笨 323253 30 201223979 乙烯-共聚-桂皮酸乙烯酯-共聚-4-乙烯基-1,3-二氧雜環戊烷-2-酮-共聚-丙烯腈-共聚一[曱基丙烯酸2-[〇一（1，一甲基亞丙基胺基）羧基胺基]乙酯]-共聚—烯丙基三曱基鍺）、聚（苯乙烯-共聚-桂皮酸乙烯酯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-丙烯腈-共聚-[曱基丙烯酸2-[1，-(3’，5’-二曱基吡唑基）羧基胺基]乙酯]-共聚-烯丙基三甲基鍺）、聚（桂皮酸乙烯酯-共聚-4-乙烯基-1，3-二氧雜環戊烧-2-酮-共聚-[曱基丙烯酸2-[0-（1’_甲基亞丙基胺基）叛基胺基]乙酯])、聚（桂皮酸乙烯酯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-[曱基丙烯酸2-[1’ -(3,，5,-二曱基吡唑基）羧基胺基]乙酯])、聚（4-乙烯基-1，3-二氧雜環戊烧-2-酮-共聚-桂皮酸乙烯酯-共聚-[曱基丙稀酸 2-[1’-(3’，5’-二甲基"比唑基）羧基胺基]乙酯])、聚（苯乙烯-共聚-桂皮酸乙稀醋-共聚-4-氯甲基苯乙烯-共聚-4-乙烯基-1，3-二氧雜環戊烷-2-酮-共聚-[曱基丙烯酸2-[〇-(1’-曱基亞丙基胺基）羧基胺基]乙酯])等。 [活性氫化合物（B)] 活性氫化合物（B)為分子内含有2個以上活性氫的低分子化合物或分子内含有2個以上活性氫的高分子化合物。活性氫在典型上可列舉如在胺基、羥基或疏基 (mercapto)中所含的氫原子。就活性氫而言，較佳係上述反應性官能基中’其中如可良好地生成與異氰酸基、異硫氰酸基的反應之酚性羥基中之羥基所含的氫、醇性經基中之羥基所含的氫、芳香族胺基中之胺基所含的氮。 323253 31 201223979 分子内含有2個以上活性氫的低分子化合物之具體例，可舉例如具有使2個以上含有活性氳的基鍵結於低分子（單體）構造而成之構造的化合物。該低分子構造可舉例如烷基構造、苯環構造。該低分子化合物之具體例可舉例 * 如胺系化合物、醇系化合物、盼系化合物或硫醇系化合物。胺系化合物可舉例如乙二胺、丙二胺、六亞曱基二胺、 Ν，Ν，Ν’，Ν’-四胺基乙基乙二胺、鄰苯二胺、間苯二胺、對苯二胺、Ν，Ν’ -二苯基-對苯二胺、三聚氰胺、2, 4, 6-三胺基嘧啶、1，5, 9-三氮雜環十二烷、1，3-雙（3-胺基丙基）四曱基二石夕氧烧、1,4-雙（3-胺基丙基二曱基石夕烧基）苯、 3-(2-胺基乙基胺基丙基）三（三曱基碎烧氧基）碎烧等。醇系化合物可舉例如乙二醇、1，2-羥基丙烷、丙三醇、 1,4-二曱醇苯等。酚系化合物可舉例如1，2-二羥基苯、1，3-二羥基笨、 1，4-二經基苯（氳酿）、1,2-二經基蔡、間苯二盼 (resorcin)、I丙三醇、2, 3, 4-三經基苯曱搭、3, 4, 5-三羥基苯曱醯胺等。硫醇系化合物可舉例如乙二硫醇、對苯二硫醇等。分子内含有2個以上活性氫的低分子化合物之具體例，較理想為醇系化合物、紛系化合物或芳香族胺系化合物。另一方面，於前述分子内含有2個以上活性氫的高分子化合物中，活性氫可直接鍵結於構成高分子化合物的主鏈，亦可經由既定的基而結合。而且，活性氬亦可包含於 32 323253 201223979 構成高分子化合物的構造單元中，此時，可包含於各構造單元，亦可只包含於一部分的構造單元。再者，活性氫可只鍵結於高分子化合物的末端。分子内含有2個以上活性氫的高分子化合物之具體例，可舉例如使2個以上含有活性氬的基鍵結於高分子（聚合物）構造而成之構造的化合物。含有活性氫的基可舉例如胺基、羥基或酼基。該等之中，較理想為與異氰酸基或異硫氰酸基的反應性為良好之胺基及羥基。如此的高分子化合物，係藉由使分子内包含含有活性氫的基之聚合性單體單獨聚合或與其他共聚合性化合物共聚合，形成聚合物而製造。製造分子内含有2個以上活性氫的高分子化合物時，包含含有活性氫的基之聚合性單體的放入莫耳比例，在全部參與聚合之聚合性單體中較理想為1至50莫耳％，更理想為3至30莫耳％，再更理想為5至20莫耳％。藉由將前述聚合性單體的放入莫耳比例調節成該範圍，而使絕緣層内部充分形成交聯構造。分子内含有2個以上活性氫的高分子化合物，係以具有含有環狀碳酸酯構造的基為較理想。藉此，使與高分子化合物（A)的相溶性變好。此時，使用式（1)所示的重複單元的原料之聚合性單體作為前述其他共聚合性化合物。導入分子内含有2個以上活性氫的高分子化合物中之式（1)所示的重複單元的量，相對於前述高分子化合物所具有的重複單元之合計，為10至90莫耳％，較理想為30至 33 323253 201223979 85莫耳％，更理想為45至75莫耳％。式（1)所示的重複單元的量未達10莫耳％時，與高分子化合物（A)的相溶性惡化，超過90莫耳％時，交聯構造的形成不足。 ' 為了提高有機薄膜電晶體絕緣層的交聯密度，分子内、含有2個以上活性氫的高分子化合物係以包含光二聚化反應基為較理想。此時，使用式（2)所示的重複單元的原料之聚合性單體或式（3)所示的重複單元的原料之聚合性單體，作為前述其他共聚合性化合物。當分子内含有2個以上活性氫的高分子化合物包含選自由式（2)所示的重複單元及式（3)所示的重複單元所成群組中的至少1種重複單元時，前述重複單元的量，相對於前述高分子化合物所具有的重複單元之合計，為50莫耳％以下，較理想為3至30莫耳％，更理想為5至25莫耳％。前述重複單元的量超過50莫耳％時，保存安定性降低。該等聚合性單體聚合時，亦可適用光聚合起始劑、熱聚合起始劑。而且，聚合性單體、光聚合起始劑、熱聚合起始劑可適用上述相同者。包含含有活性氫的基之聚合性單體，可舉例如胺基苯乙烯、羥基苯乙烯、乙烯基苯曱醇、曱基丙烯酸胺基乙酯、乙二醇單乙烯醚、丙烯酸4-羥基丁酯等。包含含有活性氫的基之聚合性單體，係以分子内具有羥基者較理想。而且，分子内含有2個以上活性氫的高分子化合物亦適合使用藉由使酚化合物與曱醛在酸觸媒存在下縮合而得 34 323253 201223979 之紛醒清漆（novolac)樹脂。分子内包含2個以上含有活性氫的基之高分子化合物的換算聚苯乙烯的重量平均分子量為1000至1000000，較理想為3000至500000，更理想為10000至100000，例如 20000至50000。藉此，得到使絕緣層的平坦性及均勻性變好之效果。 [有機薄膜電晶體絕緣層材料] 藉由混合高分子化合物（A)與活性氫化合物（B)，得到有機薄膜電晶體絕緣層材料。關於兩者混合的比例，藉由對高分子化合物（A)照射電磁波或加熱高分子化合物（A)而生成的第2官能基、與活性氫化合物（B)的含有活性氫的基，以莫耳比計，以調節為60/100至150/100較理想， 70/100至120/100更理想，90/100至110/100再更加理想。該比例未達60/100時，活性氫過剩，遲滯的降低效果變小，超過150/100時，與活性氫反應的官能基過剩，臨限值電壓的絕對值變大。於本發明的有機薄膜電晶體絕緣層材料中，亦可含有用以混合和調節黏度的溶劑、或與用以使高分子化合物（A) 交聯的交聯劑組合使用之添加劑等。所使用的溶劑為四氫呋喃或***等醚系溶劑、己烷等脂肪族烴系溶劑、環己烷等脂環式烴系溶劑、戊烯等不飽和烴系溶劑、二曱苯等芳香族烴系溶劑、丙酮等酮系溶劑、乙酸丁酯等乙酸酯系溶劑、異丙醇等醇系溶劑、三氯曱烷等氯系溶劑或該等的混合溶劑。 35 323253 201223979 而且’就添加劑而言’可使用用以促進交聯反應的觸媒、調平劑（leveling agent)、黏度調節劑、含有光二聚化反應基之含氟樹脂等。含有光二聚化反應基之含氣樹脂係因有降低表面自由能的效果，故特別適合作為本發明的有機薄膜電晶體絕緣層材料之添加劑。合有光二聚化反應基之含氟樹脂，係藉由使分子内含有氟原子之聚合性單體、與式（2)所示的重複單元的原料之聚合性單體或式（3)所示的重複單元的原料之聚合性單體進行共聚合，或與其他共聚合性化合物共聚合，形成聚合物而製造。 σ 含有氟原子之聚合性單體，可舉例如2, 3, 4, 5, 6_五氟本乙烯、2-二I甲基苯乙烯、3-三氟甲基苯乙稀、三氟甲基笨乙稀、丙浠酸2, 2, 2-三氟乙酯、丙稀酸2, 2, 3, 3, 3- 五氟丙酯、丙烯酸2-(全氟丁基）乙酯、丙烯酸3_全氟丁基 -2-羥基丙酯、丙烯酸2-(全氟己基）乙酯、丙烯酸3_全氟己基-2-羥基丙酯、丙烯酸2-(全氟辛基）乙酯、丙烯酸3_ 全氟辛基-2-羥基丙酯、丙烯酸2-(全氟癸基）乙酯、丙烯酸2-(全氟-3-甲基丁基）乙酯、丙烯酸3_(全氟_3_甲基丁基）-2-羥基丙酯、丙烯酸2-(全氟-5-甲基己基）乙酯、丙烯酸2-(全氟-3-曱基丁基）-2-羥基丙酯、丙烯酸3-(全氟 -5-曱基己基）-2-羥基丙酯、丙烯酸2-(全氟-7-曱基辛基）乙酯、丙烯酸3-(全氟-7-曱基辛基）-2-羥基丙酯、丙烯酸 1Η，1Η，3Η-四氟丙酯、丙烯酸1Η, 1Η，5Η-八氟戊酯、丙烯酸 1Η，1Η，7Η-十二氟庚酯、丙烯酸in，1Η，9Η-十六氟壬酯、丙 36 323253 201223979 烯酸1H-1-(三氟曱基）三氟乙酯、丙烯酸1H，1H，3H-六氟丁酯、曱基丙烯酸2, 2, 2-三氟乙酯、曱基丙烯酸2,2, 3, 3, 3_ 五氟丙酯、甲基丙烯酸2-(全氟丁基）乙酯、曱基丙烯酸3_ 全氟丁基-2-羥基丙酯、曱基丙烯酸2-(全氟己基）乙酯、甲基丙烯酸3-全氟己基-2-羥基丙酯、甲基丙烯酸2_(全氟辛基）乙酯、曱基丙烯酸3-全氟辛基-2-羥基丙酯、曱基丙烯酸2-(全氟癸基）乙酯、曱基丙烯酸2_(全氟_3_曱基丁基）乙酯、曱基丙烯酸3-(全氟-3-曱基丁基）_2-羥基丙酯、曱基丙烯酸2-(全氟-5-甲基己基）乙酯、曱基丙烯酸2_(全氟 -3-甲基丁基）-2-羥基丙酯、甲基丙烯酸3_(全氟_5_甲基己基）-2-羥基丙酯、曱基丙烯酸2_(全氟—7_甲基辛基）乙酯、甲基丙烯酸3-(全氟-7-甲基辛基）-2-羥基丙酯、甲基丙烯酸1H，1H，3H-四氟丙酯、甲基丙烯酸1H，1H，5H_八氟戊酉曰甲基丙烯酸1H，1H，7H-十二氟庚酯、甲基丙烯酸 ih，ih，9h-十六氟壬酯、甲基丙烯酸1{1_丨_(三氟甲基）三氟乙酯、甲基丙烯酸1H，1H，3H-六氟丁酯。 +製造前述含氟樹脂時，含有氟原子之聚合性單體的放入莫耳比例，在全部參與聚合的聚合性單體中，為1〇至 9〇莫耳％，較理想為3〇至85莫耳％，更理想為45至乃莫耳％。含有氟原子之聚合性單體的量未$ i莫耳％時，場效型有機薄膜電晶體的使遲滯降低的效果不足，超過90 莫耳料，與有機半導體材料的親和性惡化，難以將活性層積層於其上。而且’别述含氟樹脂令，式（2)所示的重複單元或式（3) 323253 37 201223979 所示的重複單元的量，相對於前述含氟樹脂所具有的重複單元之合計，較理想為1至50莫耳％，更理想為3至30 莫耳％，更加理想為5至20莫耳％。前述聚合性單體的量未達1莫耳％時，交聯構造的形成不足，超過50莫耳％時，保存安定性降低。前述含氟樹脂係以具有含有環狀碳酸酯構造的基為較理想。藉此，與高分子化合物（A)以及活性氩化合物（B)的相溶性變好。此時，使用式（1)所示的重複單元的原料之聚合性單體作為前述其他共聚合性化合物。前述含說樹脂中，式（1)所示的重複單元的量，相對於前述高分子化合物所具有的重複單元之合計，為50莫耳％以下，較理想為3至30莫耳％，更理想為5至25莫耳％。前述重複單元的量超過50莫耳％時，與有機半導體材料的親和性惡化，難以將活性層積層於其上。前述含氟樹脂對有機薄膜電晶體絕緣層材料之添加量，以固體成分為基準，有機薄膜電晶體絕緣層材料中之含氟樹脂的濃度係調節為0. 1至50重量％，更理想為1至 40重量％，更加理想為5至30重量％。前述含氟樹脂的添加量超過前述上限時，有機薄膜電晶體絕緣層的平坦性惡化。本發明的有機薄膜電晶體絕緣層材料係用以形成在有機薄膜電晶體中所含的絕緣層的組成物。較理想係使用於形成有機薄膜電晶體的覆蓋（overcoat)層或閘極絕緣層，特別是閘極絕緣層。有機薄膜電晶體絕緣層材料，係以有 38 323253 201223979 機薄膜電晶體覆蓋層組成物、有機薄膜電晶體閘極絕緣層組成物為較理想，更理想為有機薄膜電晶體閘極絕緣層組成物。 [有機薄膜電晶體] 第1圖係表示本發明的一實施態樣之底閘極頂接觸 (bottom gate top contact)型有機薄膜電晶體的構造之剖面示意圖。該有機薄膜電晶體具備：基板1、形成於基板1 上之閘極電極2、形成於閘極電極2上之閘極絕緣層3、形成於閘極絕緣層3上之有機半導體層4、以挾著通道 (channel)部之方式形成於有機半導體層4上之源極電極5 與汲極電極6、以及覆蓋元件整體之覆蓋層7。底閘極頂接觸型有機薄膜電晶體，係可藉由例如於基板上形成閘極電極後，於閘極電極上形成閘極絕緣層，再於閘極絕緣層上形成有機半導體層，然後於有機半導體層上形成源極電極、汲極電極，其後形成覆蓋層而製造。本發明的有機薄膜電晶體絕緣層材料，係作為有機薄膜電晶體閘極絕緣層組成物而適合用於形成閘極絕緣層。而且，亦可作為有機薄膜電晶體覆蓋層組成物而用於形成覆蓋層。第2圖係表示本發明的一實施態樣之底閘極底接觸 (bottom gate bottom contact)型有機薄膜電晶體的構造之剖面示意圖。該有機薄膜電晶體具備：基板1、形成於基板1上之閘極電極2、形成於閘極電極2上之閘極絕緣層3、以挾著通道部之方式形成於閘極絕緣層3上之源極 39 323253 201223979 電極5與汲極電極6、形成於源極電極5與汲極電極6上之有機半導體層4、以及覆蓋元件整體之覆蓋層7。底閘極底接觸型有機薄膜電晶體，係可藉由例如於基板上形成閘極電極後，於閘極電極上形成閘極絕緣層，再於閘極絕緣層上形成源極電極、汲極電極，然後於源極電極、汲極電極上形成有機半導體層，其後形成覆蓋層而製造。本發明的有機薄膜電晶體絕緣層材料，係作為有機薄膜電晶體閘極絕緣層組成物而適合用於形成閘極絕緣層。而且，亦可作為有機薄膜電晶體覆蓋層組成物而用於形成覆蓋層。閘極絕緣層或覆蓋層的形成，係藉由在有機薄膜電晶體閘極絕緣層材料中視需要而添加溶劑等以調製絕緣層塗佈液，並將絕緣層塗佈液塗佈於位於閘極絕緣層或覆蓋層之下方位置的層的表面，然後乾燥、硬化，而進行之。該絕緣層塗佈液所使用的有機溶劑，只要是溶解有機薄膜電晶體閘極絕緣層材料者，即無特別限制，較理想為在常壓下沸點為100°C至200°C之有機溶劑。該有機溶劑可舉例如 2-庚酮（沸點151°C)、丙二醇單曱醚乙酸酯（沸點146°C) 等。於該絕緣層塗佈液中依據需要可添加調平劑、界面活性劑、硬化觸媒等。本發明的有機薄膜電晶體閘極絕緣層材料亦可作為有機薄膜電晶體閘極絕緣層組成物而用於形成閘極絕緣層。該絕緣層塗佈液可藉由習知之旋轉塗佈法（spin coat)、模具塗佈機（diecoater)、網版印刷、喷墨印刷等 40 323253 201223979 而塗佈於閘極電極上。形成的塗佈層係依據需要使其乾燥。此處，所謂乾燥，係指除去所塗佈的樹脂組成物中之溶劑。然後，使已乾燥的塗佈層硬化。硬化係指有機薄膜電晶體絕緣層材料交聯。電晶體絕緣層材料的交聯，係例如藉由對塗佈層施加電磁波或熱而進行。藉此，從高分子化合物（A)的第1官能基生成第2官能基，而與活性氫化合物 (B)的含有活性氬的基反應。或者，電晶體絕緣層材料的交聯係例如藉由對塗佈層照射光而進行。藉此，因高分子化合物（A)的光二聚化反^ 基的自由基偶合反應或環化反應而二聚化。對塗佈層施加電磁波或熱、以及對塗佈層照射光係以兩者皆進行較理想。此係因提高絕緣層的交聯密度之 =。絕緣層的交聯密度若提高，則被認為可更進一步:制施加電壓時的極化。結果，特別是使用於閘極絕緣層時，有機薄膜電晶體的臨限值電壓（Vth)的絕對值及遲滯變小。對塗佈層施加熱時，加熱塗佈層到約8〇至25〇它，較理想為約1GG至23Gt：的溫度，維持約5至m分鐘，= 理想為約10 160分鐘。加熱溫度太低、加熱時間太短時，絕緣層中的化合物之交聯不足，加熱溫度太高、加孰時間 ^長時’絕緣層可能損傷。對㈣層絲電磁波或微波加 ‘、、、時’係以與對塗佈層的影響為加熱時相同之方加的條件6 田光一聚化反應基為氫原子被齒曱基取代的芳基時， 323253 41 201223979 該基係藉由電磁波的照射或電子線的能量吸收，較理想為藉由紫外線的照射或電子線的能量吸收而互相結合。照射的電磁波的波長為360nm以下’較理想為150至300nm。照射的電磁波的波長超過360nm時，有機薄膜電晶體絕緣層材料所含的化合物之交聯有不足的情況。 §光一聚化反應基為2位的氫原子被芳基取代之乙嫦基、/5位的氫原子被芳基取代之α，万-不飽和羰基、冷位 =氫原子被芳基取代之α，錢和魏基時，該等基係藉由電磁波的照射或電子線的能量吸收，較理想為藉由紫外線的照射或電子線的能量吸收而互相結合。照射的電磁波的波長為_nm以下，較理想為⑽至施m。照射的電磁波的波長超過400nm時，有機薄膜電晶體絕緣層材料所含的化合物之交聯有不足的情彡兄。紫外線的照射，係例如可藉由使用用以製造半導體的曝光裝置、用以使UV硬化性樹脂硬化的uv燈而進行。電子線的照射係例如可使用超小型電子線照射管進行。加熱可藉由使用加熱器及烤箱等進行。其他的照射條件及加熱條件係根據光二聚化反應基的種類及量等適當決定。閘極絕緣層上，亦可形成自組裝單分子膜（self_ assembled瞧心㈣層。該自級農單分子膜層，可藉由例如以在有機溶射溶解丨至⑺重量％之烧基氯魏化合物或烧基烧氧基㈣化合物而成的溶液來處理閘極絕緣膜而形成。烧基氣钱化合物可舉例如甲基三氣石夕烧、乙基三氣 323253 42 201223979 矽烷、丁基三氯矽烷、癸基三氯矽烷、十八基三氣矽烷等。烷基烷氧基矽烷化合物可舉例如甲基三曱氧基矽烷、乙基三曱氧基矽烷、丁基三曱氧基矽烷、癸基三曱氧基矽烷、十八基三曱氧基矽烷等。基板1、閘極電極2、源極電極5、汲極電極6及有機半導體層只要是以通常使用的材料及方法構成即可。基板的材料係使用樹脂或塑膠之板或薄膜、玻璃板、石夕板等。電極的材料係使用鉻、金、銀、鋁、鉬等，藉由蒸鍍法、濺鍍法、印刷法、喷墨法等習知的方法形成。就有機半導體而言，係廣泛使用7Γ共軛聚合物，可使用聚吡咯類、聚噻吩類、聚苯胺類、聚丙烯胺類、苐 (fluorene)類、聚D卡峻類、聚吲哚類、聚（對-伸苯基伸乙烯基）（poly(p-phenylenevinlene))類等。而且，可使用對有機溶劑具有溶解性之低分子物質，例如稠五苯 (pentacene)等多環芳香族衍生物、酜青素 (phthalocyanine)衍生物、茈（perylene)衍生物、四硫富瓦烯（tetrathiafulvalene)衍生物、四氰基酿二曱烧衍生物、富勒烯（fullerene)類、碳奈米管類等。具體而言，可舉例如9, 9-二正辛基第-2, 7-二（硼酸伸乙酯）與5, 5’ -二溴-2, 2’-雙噻吩的縮合物等。有機半導體的形成，係藉由例如在有機半導體中視需要而添加溶劑專以调製有機半導體塗佈液’並將該有機半導體塗佈液塗佈於閘極絕緣層上，使該有機半導體塗佈液乾燥，而進行之。於本發明中，構成閘極絕緣層的樹脂具 43 323253 201223979 有酚部分，與有機半導體化合物具有親和性。因此，藉由前述塗佈乾燥法，於有機半導體層與閘極絕緣層之間形成均勻平坦的界面。有機半導體塗佈液所使用的溶劑，只要是可溶解或分散有機半導體者，即無特別限制，較理想為在常壓下的沸點為50°C至200°C的溶劑。該溶劑可舉例如三氣曱烷、曱苯、苯甲醚、2-庚酮、丙二醇單曱醚乙酸酯等。該有機半導體塗佈液可藉由與前述絕緣層塗佈液相同的習知的旋轉塗佈法、模具塗佈機、網版印刷、喷墨印刷等而塗佈於閘極絕緣層上。本發明的有機薄膜電晶體，在保護有機薄膜電晶體且提高表面的平滑性的目的下，亦可塗佈覆蓋材料。使用本發明的有機薄膜電晶體絕緣層材料，而可適宜地製作具有有機薄膜電晶體的顯示器用構件。使用具有該有機薄膜電晶體的顯示器用構件，可適宜地製作具備顯示器用構件的顯示器。實施例以下，雖依據實施例說明本發明，但本發明不限於實施例。 [合成例1 ] 將4-乙烯基-1,3-二氧雜環戊烷-2-酮（奥得里奇 (Aldrich)公司製）5. 00g、桂皮酸乙烯酯（Aldrich製） 1. 09g、曱基丙烯酸2-(0-[1’ -曱基亞丙基胺基]羧基胺基）乙酉旨（昭和電工製，商品名「Karenz MOI-BM」）3. 00g、2, 2’ - 44 323253 201223979 偶氮雙（2-曱基丙腈）0.05g、丙二醇單曱醚乙酸酯（和光純藥製）6. 09g放入50毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在60°C的油浴中聚合20小時，得到溶解有高分子化合物1的黏稠丙二醇單曱醚乙酸酯溶液。高分子化合物1具有下述重複單元。括號所附的數字表示重複單元的莫耳比例。(5): A X atom or a sulfur atom; R16JL Ru is the same or different, and represents a ruthenium atom or a carbon number of 丨 to 2G.炻雪: and, 'The present invention provides an organic thin film transistor having: a source of one-two dipole electrode, a gate electrode, an organic semiconductor layer, and a material for using any of the precursor film dielectric insulating layer materials Qing Xu insulation layer. In one aspect, the insulating layer is a gate insulating layer. Moreover, the present invention provides a member for a display comprising the above-described organic thin film transistor. Moreover, the present invention provides a display comprising the aforementioned member for a display. (Effect of the Invention) An organic thin film transistor having an insulating layer formed using the organic thin film transistor insulating layer material of the present invention has a low absolute value and a low hysteresis voltage. [Embodiment] Then, the present invention will be described more closely. Further, the term "polymer compound" as used herein means a compound having a structure in which a plurality of identical structural units are repeated in a molecule, that is, a so-called dimer. On the other hand, the "low molecular compound" means a compound having the same structural unit which is not repeated in the molecule. 9 323253 201223979 The organic thin film transistor insulating layer material of the present invention contains a polymer compound (A) and an active hydrogen compound (B). The active hydrogen means a hydrogen atom bonded to an atom other than a carbon atom such as an oxygen atom, a nitrogen atom or a sulfur atom. [Polymer compound (A)] The polymer compound (A) contains a carbonate moiety (-0-C0-0-) and has a plurality of second functional groups which react with active argon when electromagnetic waves or heat are applied. The first functional group of the group. By introducing a carbonate moiety into the organic thin film transistor insulating layer material, for example, when an organic thin film transistor insulating layer material is used to form the gate insulating layer, the absolute value or hysteresis of the threshold voltage of the organic thin film transistor Reduced, the accuracy of the action is improved. Further, when the carbonate portion is introduced, the dielectric constant of the organic thin film transistor insulating layer material is increased, for example, when used to form a gate insulating layer, it becomes easy to increase the gate capacitance of the organic thin film transistor, and it becomes It is easy to lower the driving voltage of the organic thin film transistor. Further, although the first functional group contained in the polymer compound (A) does not react with active hydrogen, when electromagnetic wave irradiation or heat is applied to the first functional group, a second functional group is generated, which is active. Hydrogen reaction. That is, the first functional group is deprotected by electromagnetic waves or heat to form a second functional group which reacts with active hydrogen. The second functional group reacts with and bonds with the active hydrogen of the active hydrogen compound (B), whereby a crosslinked structure can be formed inside the insulating layer. If a crosslinked structure is formed inside the insulating layer, the molecules in the insulating layer are suppressed. Move to suppress the polarization of the insulating layer. When the insulating layer which is suppressed in polarization is used as the gate insulating layer, for example, the absolute value of the threshold voltage of the organic thin film transistor and the hysteresis are lowered, and the operation accuracy is improved. The second functional group is blocked before application of electromagnetic waves or heat in the formation of the gate insulating layer, and is present in the resin composition as the first functional group. As a result, the storage stability of the resin composition is improved. For example, a polymer compound having a repeating unit containing a group having a cyclic carbonate structure and a repeating unit containing the first functional group corresponds to the polymer compound (A). The repeating unit comprising a group having a cyclic carbonate structure is more preferably a repeating unit represented by the above formula (1). In the formula (1), Ri represents a nitrogen atom or a fluorenyl group. In one aspect, it is a gas atom. Raa represents a divalent organic group having 1 to 20 carbon atoms. The hydrogen atom in the divalent organic group may be substituted by a fluorine atom. a represents an integer 〇 to 20. In a bear, a is 〇. R2 to R4 are the same or different and represent a fluorene atom or a valence organic group having a carbon number of 1 to 2 Å. The hydrogen atom in the monovalent organic group may be substituted by a fluorine atom. In one aspect, R2 to r4 are a hydrogen atom. The organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be saturated or unsaturated. The monovalent organic group having 1 to 20 carbon atoms may, for example, be a linear hydrocarbon group having a carbon number of 丨 to 2 Å, a branched hydrocarbon group having a carbon number of 3 炱 20, a cyclic hydrocarbon group having a carbon number of 3 to 2 Å, or a carbon number of 6 to The aromatic hydrocarbon group of 20 is preferably a linear hydrocarbon group having a carbon number of 丨 to ^, a branched hydrocarbon group having 3 to 6 carbon atoms, a cyclic hydrocarbon group having 3 to 6 carbon atoms, or an aromatic hydrocarbon group having 6 to 20 carbon atoms. 323253 11 201223979 In the linear hydrocarbon group having 1 to 20 carbon atoms, the branched hydrocarbon group having 3 to 20 carbon atoms, and the cyclic hydrocarbon group having 3 to 20 carbon atoms, the hydrogen atom contained in the groups may be substituted by a fluorine atom. The hydrogen atom in the aromatic hydrocarbon group having 6 to 20 carbon atoms may be substituted by an alkyl group, a gas atom, a desert atom, a ruthenium atom or the like. Specific examples of the monovalent organic group having 1 to 20 carbon atoms include, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, an isopropyl group, an isobutyl group, a t-butyl group, and a cyclopropyl group. , cyclobutyl, cyclopentyl, cyclohexyl, cyclopentenyl, cyclohexenyl, trifluoromethyl, trifluoroethyl, phenyl, naphthyl, anthracenyl, tolyl, diphenyl, di Nonylphenyl, tridecylphenyl, ethylphenyl, diethylphenyl, triethylphenyl, propylphenyl, butylphenyl, nonylnaphthyl, dinonylnaphthyl, three A mercapto naphthyl group, a vinyl naphthyl group, an ethenyl naphthyl group, an anthranyl fluorenyl group, an ethyl fluorenyl group, a chlorophenyl group, a bromophenyl group. The monovalent organic group having 1 to 20 carbon atoms is preferably an alkyl group. The divalent organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a nitrogen atom, an oxygen atom or a sulfur atom. Hetero atom. For example, a divalent linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a divalent branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a divalent cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, and a carbon number of 6 to 20 divalent aromatic hydrocarbon groups, -0-C0-, -0-, -CO-NH-, -NH-CO-NH---NH-CO-O-. These groups may also have a substituent. Among them, a divalent linear aliphatic hydrocarbon group having 1 to 6 carbon atoms, a divalent branched aliphatic hydrocarbon group having 3 to 6 carbon atoms, a divalent cyclic aliphatic hydrocarbon group having 3 to 6 carbon atoms, and a divalent carbon The number of 6 to 20 aromatic hydrocarbon groups, -0-C0- is preferred. 12 323253 201223979 Specific examples of the divalent aliphatic hydrocarbon group and the divalent cyclic hydrocarbon group include, for example, a methylene group (attached 1:11乂16116), an extended ethyl group (6 let 716116), a propyl group, a butyl group, Ethyl, hexyl, isopropyl, isobutyl, dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, iminomethylene, A carbonylimidomethylidene group, an iminocarbonyliminohydrazino group, an oxymethylene group, an oxycarbonylmethylene group, a carbonyloxymethylene group, or the like. Specific examples of the divalent aromatic hydrocarbon group having 6 to 20 carbon atoms include, for example, a strepto group, an anthranyl group, a mercapto group, a dimethylphenylene group, a tridecylphenylene group, an exoethylphenyl group, and a diphenyl group. Stretching ethyl phenyl, tri-ethyl extending phenyl, propyl extending phenyl, stretching T-base phenyl,? Streptyl naphthyl, dif-based stretching, trimethyl-naphthyl, vinyl, naphthyl, vinyl, naphthyl, f-based, fluorenyl, 6-phenyl a phenyl group, a phenylene group, a phenylene group, an oxycarbonyl group, a carbonyloxyphenyl group, and the like. Further, preferred examples of the above-mentioned first aspect include, for example, an isocyanato group blocked by a blocking agent and an isothiocyanate group blocked by a blocking agent. The isocyanate group blocked by the blocking agent and the blocked r group ' can be made by having only one substituent in the molecule: the isothiocyanate group is reduced in redness, and the money It is produced by reacting a county or an isothiocyl group. The above-mentioned blocking agent is preferably one which is dissociated at a temperature of not more than 17 G ° C even after reacting with an isocyanate group or an isothiocyl group. For example, an alcohol compound or a phenol system may be mentioned. Compound, active sulfonium-based compound, mecaptan-based compound, guanamine-based compound, ya 323253 13 201223979 = oxime, taste-salt compound, urea-based compound, fat (.-) (biJm,) amine system The compound, the imine compound, the bisulfite (b1Sulflte), the % pyridine compound, and the heart (the above-mentioned blocking agents may be used singly or in combination of two or more kinds thereof, and the blocking agent may, for example, be an anthraquinone compound or a pyridyl compound. The azole compound is exemplified as a specific blocking agent. The alcohol compound may, for example, be methanol, ethanol, _, butanol, 2-ethylhexanol or methyl stilbene (5) post 〇 butyl Lucasine, methyl carbitol (methyl Μ01), stupid methanol, cyclohexanol, etc. The compounds of the desired group include, for example, thiophene, acetaminophen, ethyl fluorene, diterpene, benzophenone, benzoic acid (IV) The active methylene-based compound may, for example, be malonic acid dimethyl vinegar or malonic acid diacetic acid. The thiol-based compound may, for example, be butyl mercaptan or dodecamyl alcohol. The guanamine-based compound may, for example, be acetanilide. , acetamidine, ε-caprolactam, pentanolide, butyl-indoleamine, and the like, and the quinone imine compound may, for example, be a succinimide or maleimide. Wait. Examples of the imidazole-based compound include imidazole and 2-mercaptoimidazole. Examples of the urea-based compound include urea, thiourea, and ethyleneurea. Examples of the lanthanoid compound include foraldoxime, acetaldoxime, acetone oxime, mercaptoethyl hydrazine, and cyclohexanone oxime. The amine compound may, for example, be diphenylamine, aniline or carbazole. The imine compound may, for example, be an ethylenimine or a polyethylenimine. The bisulfite salt may, for example, be sodium bisulfite. The pyridine compound may, for example, be a 2-pyroxyquinoline or a 2-hydoxyquinoline 14 323253 201223979. The pyrazyl compound may, for example, be a 3 5 -diindolyl group, a 5-ethylidene-pyrene. ύ^ _ The isocyanate group or the iso-acid group which is blocked by the blocking agent in the present invention is a group represented by the above formula (4) or a formula represented by the above formula (5) The base is ideal. In the formula (4) and the formula (5), 'X' represents an oxygen atom or a sulfur atom, and the same or different from the ruler, and represents a hydrogen atom or a monovalent organic group having a carbon number of 1 to 2 Å: " The definitions, specific examples, and the like are the same as those of the above-mentioned monovalent organic group, specific examples, and the like. In one aspect, the heart and R1S are the same or different and are a group selected from the group consisting of a thiol group and a hexyl group. Further, in another aspect, {^ to Ru is an isocyanate group in which the gas source is blocked by a blocking agent, and examples thereof include a fluorene-(methylenecarboxyamino group, 0-(1). -ethylideneamino)carboxyamino, 0-(1-mercaptoethylidene)carboxyamino, 0-[1-methylpropyleneamino]carboxyamino, ^dimercaptopyridyl Azylcarbonyl)amino group, (N-3-ethyl-5-mercaptopyrazolylcellulose amide, (N-3,5-diethylpyrazolylcarbonyl)amine, (N-3) -propyl~5,methylpyrazolylcarbonyl)amine, (N-3-ethyl-5-propylpyrazolylcarbonyl)amine, etc. The isothiocyanate group blocked by a blocker For example, 〇-(methylene hydroxyl thiol), 0-(1-ethylideneamino)thiocarboxyamino, 〇-(1-methylethylidene) thio Amino group, 0-[1-mercaptopropylamino]thioheptylamino, (N-3,5-diamidinopyrazolylthiocarbonyl)amine, (N-3-ethyl- 5-decylpyrazolylthiocarbonyl)amino, (N-3, 5-diethylpyrazolylthiocarbonyl) 15 323253 201223979 Amino, (N-3-propyl-5-mercaptopyrazolyl) Thiocarbonyl)amine, (N_3_ethyl-5-propylpyrazolesulfuric acid) The first functional group used in the present invention is preferably an isocyanate group blocked by a blocking agent. The polymer compound (A) 'has a plurality of electromagnetic waves or electron beams. The functional group which causes the dimerization reaction by absorption of energy (referred to as "photodimerization reaction group" in the present specification) is preferable. It is easy to increase the organic thin film transistor by using two kinds of crosslinking mechanisms Crosslinking density of the insulating layer material. If the electromagnetic wave absorbed by the photodimerization reaction group is too low, when the organic thin film transistor insulating layer material is formed by photopolymerization, the photodimerization reaction group may also be Therefore, it is preferable to use a high-energy electromagnetic wave. The preferred electromagnetic wave absorbed by the photodimerization reaction group is ultraviolet light, for example, an electromagnetic wave having a wavelength of 400 nm or less, preferably 150 to 380 nm. Here, the term "dimerization" means two. The organic compound molecules are chemically bonded. The bonded molecules may be the same species or different species. The chemical structures of the functional groups participating in the dimerization in the two molecules of the dimerization may be phases. Similarly, the functional group is preferably a structure or a combination which produces a dimerization reaction without using a reaction aid such as a catalyst or an initiator, and is preferred because of contact reaction. The residue of the agent may deteriorate the surrounding organic material. Preferred examples of the photodimerization reaction group are an aryl group in which a hydrogen atom is replaced by a halomethyl group, and a vinyl group in which a hydrogen atom at the 2-position is substituted with an aryl group. The 10,000-position hydrogen atom is substituted by an aryl group, the 10,000-unsaturated number group, and the hydrogen atom at the rock position are aryl groups 323253 16 201223979 I, t unsaturated m-oxy group. Among them, a hydrogen atom is preferred. The base of the 2nd position, the A atom of the 2 position is substituted by the benzene group, the 子 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = When the side chain component of the repeating unit is a square base in February, the affinity for other organic f-buckets such as an organic semiconductor is improved, and (4) the exposed surface of the insulating layer is subtracted to form a flat layer. When a hydrogen atom is irradiated with an ultraviolet ray or an electron ray by an aryl group substituted by a methyl group, the element will be detached to form a carbamoyl type carboradieal. When the two carbon radicals are combined, a carbon-carbon bond is formed. The organic trench film transistor insulating layer material is crosslinked. The combination of the aforementioned carbon free radicals is the so-called "radical coupling" H with respect to the nitrogen atom of the 2-position nitrogen atom, the hydrogen atom of the (10) and the hydrogen atom of the m-position of the m-position are replaced by an aryl group. Saturated m Oxygen When a UV or electron beam is irradiated, a 2+2 cyclization reaction is generated to crosslink the organic thin film transistor insulating layer material. A particularly prudent photopolymerization reaction group is a nitrogen atom in the oxime group which is taken from the aryl group by a /3 unsaturated oxy group. These base systems have high sensitivity and do not need to be irradiated with long-term ultraviolet rays or electron lines in order to form a crosslinked structure. The repeating unit of the octa-light-polymerization reaction group is preferably a repeating unit represented by the above formula (2) and a Wei unit of the pre-material (3). In (2) and (3), & and Re are the same or different, meaning that the hydrogen atom or the a ==: '^ is a gas atom, in other aspects, 6 '虱', ^ and Rcc For the same or different, 323253 17 201223979 divalent organic groups having a carbon number of 1 to 20. The hydrogen atom in the divalent organic group may be substituted by a fluorine atom. b and d represent integers from 0 to 20. b and d can be different values. In one state, b is zero. In other aspects, d is 1 and Rcc is -0-C0-. X represents a chlorine atom, a bromine atom or an iodine atom. In one aspect, X is a gas atom. c represents an integer from 1 to 5. In one aspect, c is 1. R, R7 to R13 are the same or different and each represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. The hydrogen atom in the monovalent organic group may be replaced by a fluorine atom. In one aspect, R is a hydrogen atom. In another aspect, R? to R13 are a hydrogen atom. Specific examples of the monovalent organic group having 1 to 20 carbon atoms represented by R and R7 to R13 include, for example, the same groups as the specific examples of the monovalent organic group having 1 to 20 carbon atoms represented by r2. Specific examples of the divalent organic group having 1 to 20 carbon atoms represented by Rbb and Rcc include the same groups as those of the divalent organic group having 1 to 20 carbon atoms represented by Raa. The polymer compound (A) can be initiated by, for example, a polymerizable monomer of a raw material of a repeating unit represented by the formula (1) and a polymerizable monomer containing a first functional group, using a photopolymerization initiator or thermal polymerization. The agent is produced by a method of performing copolymerization. When the polymer compound (A) contains a photodimerization reaction group, a polymerizable monomer of a raw material of a repeating unit represented by the formula (2) or a polymerizable monomer of a raw material of a repeating unit represented by the formula (3) may be used. Perform copolymerization. The polymerizable monomer of the starting material of the repeating unit represented by the formula (1) may, for example, be 4-ethlyl-1,3-dioxolane-2-one or 4-propanyloxyl Benzyl-1,3-dioxolane-2-one, 4-methylpropenyloxy hydrazine 18 323253 201223979, 1,3-dioxolan-2-one, and the like. The polymerizable monomer of the raw material of the repeating unit represented by the formula (2) may, for example, be 3-chloromethylstyrene, 4-chlorodecylstyrene, 3-bromodecylstyrene or 4-bromomethylbenzene. Ethylene and the like. The polymerizable monomer of the starting material of the repeating unit represented by the formula (3) may, for example, be viny 1 cinnamate, decyl acrylate cinnamic, cinnamoyl butyl acrylate. , cinnamyl methoxyiminoethyl methacrylate, and the like. The polymerizable monomer having a first functional group may, for example, be a monomer having an isocyanate group blocked by a blocking agent in the molecule or an isothiocyanate group blocked by a blocking agent and an unsaturated bond. The monomer having an isocyanato group blocked by a blocking agent or an isothiocyanate group blocked by a blocking agent and an unsaturatedly bonded monomer in the molecule can have an isocyanate group or a different molecule in the molecule. A compound of a thiocyanate group and an unsaturated bond is produced by reacting with a blocking agent. The unsaturated bond is preferably an unsaturated double bond. Hereinafter, unless otherwise specified, a polymerizable single system means a monomer compound containing an unsaturated bond. The unsaturated bond is preferably an unsaturated double bond. A compound having an unsaturated double bond and an isocyanate group in the molecule, and examples thereof include 2-propenyloxyethyl isocyanate, 2-mercaptopropenyloxyethyl isocyanate, and isocyanate 2-( 2'-Methyl propylene methoxyethyl) oxyethyl ester or the like. a compound having an unsaturated double bond and an isothiocyanate group in the molecule, and examples thereof include 2-propenyloxyethyl isothiocyanate, 2-mercaptopropenyloxyethyl isothiocyanate, and isothiocyanate. Acid 2-(2'-methylpropenyloxyethyl)oxyethyl ester or the like. The blocking agent contained in the polymerizable monomer can be suitably used in the above-mentioned blocking agent 19 323253 201223979. In the production, a monomer having an isocyanato group blocked by a blocking agent or an isothiorhenic acid group blocked by a blocking agent and an unsaturated bond may be added with an organic solvent or a catalyst. The monomer having an isocyanate group and an unsaturated double bond blocked by a blocking agent in the molecule may, for example, be methyl(tetra)phosphatidylamino]carboxyamino]ethyl or methacrylic acid. —Dimercaptopyrazolyl]carboxyamino]ethyl ester and the like. & The monomer having an isothiocyanate group and an unsaturated double bond blocked by a blocking agent in the above molecule, and, for example, methacrylic acid 2_[〇一[1,_曱 propylideneamino]thio Carboxyamino]ethyl ester, methacrylic acid 2_^_[1,3,monodimethylpyrazolyl]thiolamino group]. The aforementioned photopolymerization initiator may, for example, be acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 4-isopropylidene 2-hydroxy-2-mercaptopropiophenone, 2-hydroxy·~2-mercaptopropiophenone, 4, 4, bis(diethylamino)diphenyl ketone, diphenyl ketone, methyl (o) Benzoyl)benzoate, 1-phenyl-1,2-propanedione-2-(0-ethoxycarbonyl)anthracene, phenylphenyl-indole, 2-propanyl-one-2-( O-benzoyl), benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin octyl ether, diphenyl ethylenedione (benzil), a carbonyl compound such as benzildimethylketal, diphenylglyoxilyl diethyl ketal or diacetyl; fluorenyl hydrazine, gas hydrazine, gas thioxanthene Chloro chlorothioxanthone, 2-mercapto thioindene |, 2-isopropyl thioxanthone or the like or a thioxanthone derivative; diphenyl disulfide, dithiocarbamate, etc. Sulfur compound. 20 323253 201223979 When light energy is used as the energy for initial copolymerization, the wavelength of light irradiated to the polymerizable monomer is 360 nm or more, preferably 36 〇 to 45 〇 nm. The thermal polymerization initiator may be a radical polymerization initiator, for example, for example. 2, 2 - azobisisobutyronitrile, 2, 2' _ azobisisopramonitrile, 2, 2, - azobis(2'4-dioxyl valeronitrile), 4,4'-azo Bis(4-cyanovaleric acid), 1,1-azobis(%capronitrile), 2,2,-azobis(2-amidinopropane), 2, 2,-azobis (2_ Anthraquinone compound such as 2,2,iZ (Dbis(2_methylpropionamidine) 2 hydrochloride; thioglycolyl ketone oxime oxime isobutyl hydrazine, peroxycyclohexane _, peroxidation Oxidized ketones such as acetamidine acetone; isobutyl peroxide, benzoyl peroxide peroxide 2,4-chlorobenzyl thiol, peroxymethylbenzyl benzoate, oxidized laurel Oxidized dibenzoyl peroxides such as benzophenone groups; 2, 4'4_tridecylpentyl-2~hydrogen peroxide, diisopropylbenzene hydroperoxide, cumene hydroperoxide, Nitrogen peroxides such as tributyl hydroperoxide; dicumyl peroxide, tributyl isoperoxy peroxide, dibutyl butyl peroxide, tris(t-butylperoxy) triterpene, etc. Oxidation of the second base of the bismuth bismuth tert-butyl peroxycyclohexane, 2,2-di (t-butyl peroxidation) Burning peroxy ketals; tert-butyl peroxypivalate, peroxy-2-ethylhexanoic acid, third vinegar, isobutyric acid, second vinegar, peroxidation Hydrogen terephthalate, third terpene vinegar, perylene adipic acid, second tributary, peroxidation, 3, 5, vinegar, acetic acid, third butyl hydrazine, peroxybenzoic acid, third vinegar, Wei = A sulphuric acid peroxidation _; peroxidation of di-iso-(4), Weihua dicarbonate, second butyl, ipperate 323253 21 201223979 butyl percarbonate and other peroxycarbonates. The polymer compound (A) used in the present invention is a polymerizable material which can add a polymerizable monomer of a raw material of a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2) at the time of polymerization. The monomer, the polymerizable monomer of the raw material of the repeating unit represented by the formula (3), and another polymerizable monomer other than the polymerizable monomer of the first functional group are produced. Other polymerizable monomers include, for example, acrylates and derivatives thereof, methacrylates and derivatives thereof, styrene and derivatives thereof, vinyl acetate and derivatives thereof, mercapto acrylonitrile and derivatives thereof, Acrylonitrile and its derivatives, vinyl esters and derivatives of organic carboxylic acids, allyl esters of organic carboxylic acids and their derivatives, dialkyl esters of fumaric acid and its derivatives, maleic acid Diester and its derivatives, dialkyl esters of itaconic acid and its derivatives, N-vinylguanamine derivatives of organic carboxylic acids, maleimide and its derivatives a substance, a terminal unsaturated hydrocarbon and a derivative thereof, an organic wrong derivative or the like. The kind of other polymerizable monomer is appropriately selected depending on the characteristics required for the insulating layer. From the viewpoints of preferable durability and reduction in hysteresis of the organic thin film transistor, a monomer having a high molecular density such as styrene or a styrene derivative and forming a hard film is selected. Further, from the viewpoint of the adhesion to the adjacent surface of the insulating layer such as the surface of the gate electrode and the substrate, the flexibility is given as the case of the thiol acrylate and its derivative, the acrylate and the derivative thereof. body. In a preferred aspect, a monomer having no active hydrogen-containing group such as an alkyl group such as a methyl group or an ethyl group is selected. For example, the polymerizable monomer of the starting material of the repeating unit of the repeating unit represented by the formula (1), the polymerizable monomer of the starting unit of the repeating unit represented by the formula (2), and the repeating unit of the formula (3) The polymerizable monomer of the raw material and the polymerizable monomer material containing the functional group are used in the reaction by combining a styrene silk ethyl bromide derivative containing no hydrogen hydrogen, and thus the durability is particularly high and the hysteresis is small. Closed-pole insulation. As the acrylate and its derivative, a monofunctional acrylate or a polyfunctional acrylate having a limited amount can be used, and examples thereof include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, and acrylic acid. N-butyl acrylate, isobutyl acrylate, dibutyl acrylate, hexyl acrylate, octyl acrylate, 2-ethylhexyl acrylate, decyl acrylate, isobornyl acrylate, cyclohexyl acrylate, phenyl acrylate, acrylic acid Phenyl phthalate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate, 2-hydroxybutyl acrylate, 2-hydroxyphenyl ethyl acrylate, ethylene glycol diacrylate, propylene glycol Acrylate, 1,4-butanediol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, trihydroxymethyl propane diacrylate, trimethylolpropane triacrylate, neopentyl Pentaerythritol pentaacrylate, 2, 2, 2-trifluoroethyl acrylate, 2, 2, 3, 3, 3-pentafluoropropyl acrylate, 2-(perfluorobutyl)ethyl acrylate, 3-perfluorobutyl acrylate -2-hydroxypropyl ester, 2-(perfluorohexyl)ethyl acrylate, 3-perfluorohexyl-2-hydroxypropyl acrylate, 2-(perfluorooctyl)ethyl acrylate, 3-perfluorooctyl acrylate -2-hydroxypropyl ester, 2-(perfluorodecyl)ethyl acrylate, 2-(perfluoro-3-methylbutyl)ethyl acrylate, 3-(perfluoro-3-mercaptobutyl)acrylate -2-hydroxypropyl ester, 2-(perfluoro-5-decylhexyl)acetate, 2-(perfluoro-3-mercaptobutyl)-2- 23 323253 201223979 Hydroxypropyl ester, acrylic acid 3-(perfluoro-5-mercaptohexyl)-2-hydroxypropyl ester, 2-(perfluoro-7-fluorenyloctyl)ethyl acrylate, 3-(perfluoromethyloctyl) acrylate 2-hydroxypropyl vinegar, 1H, 1H, 3H-tetrafluoropropyl acrylate, 1H, 1H, 5H-octafluoroi pentane vinegar, 1H, 1H, 7H-dodecyl fluorene, propylene Acid 1H, 1H, 9H-hexadecafluorodecyl ester, acrylic acid (trifluorodecyl) trifluoroacetate, 1H, 1H, 3H-hexafluorobutyl acrylate, n,N-dimercaptopropenylamine, N, N-diethyl acrylamide, N-propylene hydrazine. As the methacrylate and its derivative, a monofunctional methacrylate or a polyfunctional thiol acrylate having a limited amount can be used, and examples thereof include methyl methacrylate, ethyl methacrylate, and A. N-propyl acrylate, isopropyl isopropyl acrylate, n-butyl methacrylate, isobutyl methacrylate, second butyl methacrylate, hexyl methacrylate, octyl methacrylate, hydrazine 2-ethylhexyl acrylate, decyl methacrylate, isobornyl decyl propyl acrylate, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, 2-hydroxy methacrylate Ethyl ester, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 2-hydroxyphenyl ethyl methacrylate, ethylene glycol dimethacrylate, Propyl alcohol dimercapto acrylate, 1,4-butanediol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, trimethylolpropane dimethyl Acrylate, trimethylolpropane trimethacrylate, day, new Pentaerythrit〇l pentamethacrylate, 2,2,2-trifluoroethyl methacrylate, 2, 2, 3, 3, 3-pentafluoropropyl methacrylate, methacrylic acid 2-(perfluorobutyl)ethyl ester, 3-perfluorobutyl-2-hydroxypropyl phenyl acrylate, pyridine 323253 24 201223979 2-(perfluorohexyl)ethyl ester, methacrylic acid 3_perfluoro Hexyl-2-hydroxypropyl ester, 2-(perfluorooctyl)ethyl methacrylate, 3_perfluorooctyl-2-hydroxypropyl methacrylate, 2-(perfluorodecyl)ethyl methacrylate Ester, 2-(perfluoro-3-methylbutyl)ethyl methacrylate, 3-(perfluoro-3-methylbutyl)-2-hydroxypropyl methacrylate, 2-(methacrylic acid) Perfluoro-5-decylhexyl)ethyl ester, 2-(per-amino-3-methylbutyl)-2-hydroxypropyl methacrylate, 3-(all-5-methylhexyl) methacrylate 2-Benzyl propyl ester, 2-(perfluoro-7-methyloctyl)ethyl methacrylate, 3-(perfluoro-7-methyloctyl)-2-hydroxypropyl methacrylate Ester, methacrylic acid in, 1H, 3H-tetrafluoropropyl ester, methacrylic acid 1H, 1H, 5H-octafluoropentyl ester, methacrylic acid 1H, 1H, 7H-12 Fluorheptyl ester, 1H, 1H, 9H-hexadecafluorodecyl methacrylate, 1H-1-(trifluoromethyl)trifluoroethyl methacrylate, iH, 1H, 3H-hexafluorobutyl methacrylate , N,N-dimethylmethacrylamide, hydrazine, hydrazine-diethyl methacrylamide, hydrazine-acrylonitrile. Examples of styrene and its derivatives include styrene, 2,4-dimercapto-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, and 2,4-difluorene. Styrene, 2,5-dimercaptostyrene, 2,6-dimercaptostyrene, 3,4-dimercaptostyrene, 3,5-dimethylstyrene, 2, 4, 6- Trimethylstyrene, 2,4,5-trimethylstyrene, pentamethylstyrene, o-ethylstyrene, m-ethylstyrene, p-ethylstyrene, styrene styrene, m-benzene Ethylene, para-styrene, o-bromostyrene, m-bromostyrene, p-bromostyrene, o-methoxystyrene, m-decyloxystyrene, p-methoxystyrene, o-hydroxystyrene, m-hydroxyl Styrene, p-hydroxy stupyl ethylene, 2-vinyl biphenyl, 3-vinyl biphenyl, 4-vinyl biphenyl, divinyl 25 323253 201223979 naphthalene, 2-vinyl naphthalene, 4-vinyl-p- Biphenyl, 1-vinyl fluorene, α-mercapto styrene, o-isopropenyl benzene, m-isopropenyltoluene, p-isopropenyl benzene, 2,4-dimethyl-hydrazine; Styrene, 2,3-dimercapto-indole:-mercaptostyrene, 3, 5-dimercapto-fluorene;-mercaptostyrene, p-isopropyl-α-mercaptostyrene, α-ethylstyrene, gas styrene, divinylbenzene, divinylbiphenyl, diiso Propylbenzene, 4-aminostyrene, and the like. Examples of the acrylonitrile and the derivative thereof include acrylonitrile and the like. The mercaptoacrylonitrile and derivatives thereof may, for example, be methacrylonitrile or the like. The vinyl ester of an organic carboxylic acid and a derivative thereof may, for example, be ethylene glycol acetate, vinyl propionate, vinyl butyrate, vinyl benzoate or divinyl adipate. The allyl ester of an organic carboxylic acid and a derivative thereof may, for example, be isopropyl acetate, allyl benzoate, diallyl adipate, diisopropyl propyl phthalate or isophthalic acid. Allyl ester, phthalic acid diene vinegar, and the like. The anti-butyric acid·one yard vinegar and its derivative' may, for example, be di-p-butyl succinate, diethyl fumarate, diisopropyl fumarate, and anti-butene Acid dibutyl butyl ester, diisobutyl butyl fumarate, di-n-butyl butyl bromide, di 2-ethylhexyl fumarate, diphenyl phthalate, etc. . The dialkyl ester of maleic acid and derivatives thereof may, for example, be dimethyl dimethyl succinate, diethyl maleate, diisopropyl maleate or cis-butadiene. Second dibutyl sulfonate diisobutylate. 1 is intended to be dibutyl succinate, n-butyl acrylate, di-2-ethylhexyl maleate, maleic acid diester, and the like. 323253 26 201223979 The dialkyl ester of sulfhydryl succinic acid and its derivatives, for example, dinonyl methylene succinate, diethyl sulfenyl succinate, methylene succinate diiso Propyl ester, sulfhydryl succinic acid dibutyl acrylate, diisobutyl sulfonium succinate, di-n-butyl methylene succinate, di-2-ethylhexyl sulfosuccinate , methylene dimethyl succinate and the like. The N-vinylguanamine derivative of the organic carboxylic acid may, for example, be N-fluorenyl-N-vinylacetamide or the like. The maleimide and its derivative may, for example, be N-phenylmaleimide or N-cyclohexylmethyleneimine. The terminal unsaturated hydrocarbon and its derivative may, for example, be 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride or allyl alcohol. The organic anthracene derivative may, for example, be propyltrimethylhydrazine, allyltriethylphosphonium, allyltributylphosphonium, trimethylvinylanthracene or triethylvinylanthracene. Among these, it is preferable to use a bupropion acid burnt, a mercapto acryl vinegar, a styrene, an acrylonitrile, a methacrylonitrile, and allyl trimethyl hydrazine. The amount of the polymerizable monomer in the raw material of the repeating unit represented by the above formula (1) is adjusted so that the amount of the carbonate portion introduced into the polymer compound (A) is an appropriate amount. The amount of the repeating unit represented by the formula (1) in the polymer compound (A) is preferably from 1 to 80 mol%, more preferably from 1 to 80 mol%, based on the total of the repeating units of the polymer compound (A). 5 to 70 mol%, and more desirably 10 to 60 mol%. In a preferred embodiment, the amount of the repeating unit represented by the formula (1) 27 323253 201223979 in the polymer compound (A) is compared with the total of the repeating units of the polymer compound (A). It is desirably 10 to 90 mol%, more desirably 30 to 85 mol%, and even more desirably 45 to 75 mol%. When the amount of the repeating unit represented by the formula (1) is less than 1 mol%, the effect of lowering the hysteresis of the field effect type organic thin film transistor is insufficient, and when it exceeds 90 mol%, the affinity with the organic semiconductor material is deteriorated. It is difficult to laminate the active layer thereon. When the polymer compound (A) is produced, the molar ratio of the polymerizable monomer containing the isocyanate group blocked by the blocking agent or the isothiocyanate group blocked by the blocking agent is all involved in the polymerization. The polymerizable monomer is from 5 to 50 mol%, more desirably from 5 to 40 mol%, more desirably from 10 to 30 mol%. By adjusting the molar ratio of the above-mentioned polymerizable monomer to this range, a crosslinked structure is sufficiently formed inside the insulating layer to keep the content of the polar group low, and the polarization of the insulating layer is suppressed. When the polymer compound (A) contains at least one repeating unit selected from the group consisting of a repeating unit represented by the formula (2) and a repeating unit represented by the formula (3), the formula (1) When the number of repeating units is 100, the total of the number of repeating units represented by the formula (2) and the number of repeating units represented by the formula (3) is 100 or less, for example, 5 to 100, more preferably 10 to 100, more preferably The ideal is 10 to 50, more preferably 10 to 20. When the total of the numbers is over 100, the storage stability is lowered. The polymer compound (A) may have a weight average molecular weight of from 3,000 to 1,000,000, more preferably from 5,000 to 500,000, still more preferably from 10,000 to 100,000, for example, from 20,000 to 80,000. The weight average molecular weight is determined, for example, by using polystyrene as a reference and converting it by 28 323253 201223979. The polymerized product (A) may be any of a linear chain, a branched chain, and a cyclic chain. The repeating unit represented by the formula (1) used in the present invention contains two or more higher enthalpy functional groups of the second functional group which reacts with active hydrogen by the action of electromagnetic wave irradiation or heat. The molecular compound may, for example, be poly(4-vinyl-1,3-dioxol-2-one-copolymer~[methacrylic acid 2-[0-(Γ-methylpropylamino)) Carboxyamino]ethyl]], ^^_ vinyl-1,3-dioxol-2-one-copolymer-[methacrylic acid 2_[1'-(3',5'-dimethyl Pyrazolyl)carboxyamino]ethyl]], poly(stupyl-co-co--3-methylmethyl strepto-ethylene-copolymer_4-ethlyl-1,3-dioxolane-2- Ketone-co-polymerization [2-[〇-(1,-mercaptopropylamino)carboxyamino]ethyl]]]], poly(styrene-co-(3-chloroindenyl)-copolymer -4-vinyl-1,3-dioxol-2-one-copolymer-[ζ-ΐΤ-(3',5'-dimethylpyrazolyl)alkylamino) Ethyl]), poly(styrene-co--3-chloromercapto-styrene-co--4-vinyl-1,3-dioxol-2-one-co-acrylonitrile-co-polymer-[ Methyl propyl Acid 2-[〇-(Γ-mercaptopropylamino)carboxyamino]ethyl]], poly(styrene-co--3-chloromercaptostyrene-co--4-vinyl-1, 3-dioxol-2-one-co-acrylonitrile-copolymer-[2-[1'-(3,5,-dimethylpyrazolyl)carboxyamino]ethyl methacrylate ]), poly(styrene-co--3-chloromercaptostyrene-co--4-vinyl-1,3-dioxol-2-one-co-acrylonitrile-co-polymer 2-[0-(1'-mercaptopropylamino)carboxylamino]ethyl acrylate]-co-allyl-tridecyl fluorene), poly(stupyl-co-polymerization_3-chloroindenylbenzene) Ethylene-co-co--4-vinyl-1,3-dioxol-2-one-co-acrylonitrile-total 29 323253 201223979 Poly-[mercaptoacrylic acid 2-[Γ -(3,,5' -dimercaptopyrazolyl)carboxyamino]ethyl ester]-co-allyltrimethylsulfonium), poly(3-mercaptostyrene-co--4-vinyl-1,3-dioxo Heterocyclic ketone-2-keto-co-[2-(0-(fluorenyl-mercaptopropylamino)carboxylamino]ethyl]]], poly(3-mercaptostyrene- Copolymer-4-vinyl-1,3-dioxol-2-one-copolymer-[A 2-[1'-(3',5'-dimercaptopyrazolyl)carboxylamino]ethyl acrylate]), 1 (4-ethtoyl-1,3_*-oxazapine) Ϋ-co--4-chloromethyl phenylethylene-copolymer-[2-[0-(indolyl-methylpropylamino)carboxyamino]ethyl]]], poly(4-ethylene -1,3-dioxol-2-one-co--4-chloroindolyl-ethylene-co-acrylic acid 2-[1,-(3,,5'-dimethyl "Bizozolyl"carboxyamino]ethyl]], poly(4-vinyl-^-dioxol-2-one-co--3-methylmethylstyrene-co--4-indole Styrene-co-pentafluorostyrene-co-polymerization [2-[〇-(1'-methylpropylamino) yl) ethyl methacrylate]), poly(styrene) Copolymer-vinyl cinnamate-co--4-vinyl-1,3-dioxol-2-one-copolymer-[2-(0-(fluorenyl-mercapto propylene) Carboxyamino]ethyl]], poly(styrene-co-vinyl cinnamate-copolymer_4-vinyl-indole, 3-dioxol-2-y-co-[mercaptoacrylic acid 2-[1,_(3,,5,-didecylpyrazolyl)carboxyamino]ethyl]], poly(styrene- Copolymerization-vinyl cinnamate-co--4-ethyl-1,3-oxol-2-one-co-acrylonitrile-copolymer-[methylpropionic acid 2-[0-(1) '-Methyl propylamino) oxylamino] ethyl ester]), poly(styrene-co-vinyl cinnamate-copolymer_4-vinyl-1,3-dioxolane- 2-keto-co-acrylonitrile-copolymer-[2-[1'-(3,5'-dimercaptopyrazolyl)carboxyamino]ethyl methacrylate]), poly (stupid 323253 30 201223979 Ethylene-co-vinyl cinnamate-co--4-vinyl-1,3-dioxol-2-one-co-acrylonitrile-copolymer one [mercaptoacrylic acid 2-[〇一(1, Monomethyl propylamino)carboxyamino]ethyl]]-co-allyl tridecyl fluorene, poly(styrene-co-vinyl cinnamate-co--4-vinyl-1,3 -dioxol-2-one-co-acrylonitrile-copolymer-[2-[1,-(3',5'-dimercaptopyrazolyl)carboxyamino]ethyl methacrylate] -co-allyl trimethylhydrazine), poly(vinyl cinnamate-co--4-vinyl-1,3-dioxol-2-one-co-)-mercaptoacrylic acid 2-[ 0-(1'-methylpropylene Base) tetamine]ethyl ester]), poly(vinyl cinnamate-co--4-vinyl-1,3-dioxol-2-one-copolymer-[mercaptoacrylic acid 2-[ 1'-(3,5,-didecylpyrazolyl)carboxyamino]ethyl]], poly(4-vinyl-1,3-dioxol-2-one-co-polymerization- Vinyl cinnamate-copolymer-[2-[1'-(3',5'-dimethyl"bazolyl)carboxyamino]ethyl]], poly(styrene-copolymer) - lauric acid ethyl vinegar - copolymerized 4-chloromethyl styrene - copolymerized 4-vinyl - 1,3-dioxolane-2-one - copolymer - [mercaptoacrylic acid 2-[〇- (1'-Mercaptopropylamino)carboxyamino]ethyl]]). [Active hydrogen compound (B)] The active hydrogen compound (B) is a low molecular compound containing two or more active hydrogens in the molecule or a polymer compound containing two or more active hydrogens in the molecule. The active hydrogen is typically exemplified by a hydrogen atom as contained in an amine group, a hydroxyl group or a mercapto. In terms of active hydrogen, it is preferred that the above-mentioned reactive functional group has hydrogen which is contained in a hydroxyl group in a phenolic hydroxyl group which can form a reaction with an isocyanate group or an isothiocyanate group, and an alcoholic property. The hydrogen contained in the hydroxyl group in the group and the nitrogen contained in the amine group in the aromatic amine group. 323253 31 201223979 A specific example of a low molecular weight compound containing two or more active hydrogens in the molecule is, for example, a compound having a structure in which two or more active sulfhydryl groups are bonded to a low molecular weight (monomer) structure. The low molecular structure can be exemplified by an alkyl structure and a benzene ring structure. Specific examples of the low molecular compound are exemplified by an amine compound, an alcohol compound, a desired compound or a thiol compound. The amine compound may, for example, be ethylenediamine, propylenediamine, hexamethylenediamine, hydrazine, hydrazine, hydrazine, Ν'-tetraaminoethylethylenediamine, o-phenylenediamine, m-phenylenediamine, P-phenylenediamine, anthracene, Ν'-diphenyl-p-phenylenediamine, melamine, 2,4,6-triaminopyrimidine, 1,5,9-triazacyclododecane, 1,3- Bis(3-aminopropyl)tetradecyl dioxazepine, 1,4-bis(3-aminopropyldiaphthalenyl)benzene, 3-(2-aminoethylamino) Propyl) tris(trimethyl sulfonyloxy) sinter and the like. Examples of the alcohol compound include ethylene glycol, 1,2-hydroxypropane, glycerin, and 1,4-dioxanol. The phenolic compound may, for example, be 1,2-dihydroxybenzene, 1,3-dihydroxy stupid, 1,4-di-based benzene (brewed), 1,2-dipyridyl, and isobenzoic (resorcin). ), I glycerol, 2, 3, 4-trisyl benzoquinone, 3, 4, 5-trihydroxybenzamine, and the like. Examples of the thiol compound include ethanedithiol and terephthalic alcohol. Specific examples of the low molecular compound containing two or more active hydrogens in the molecule are preferably alcohol compounds, conjugate compounds or aromatic amine compounds. On the other hand, in the polymer compound containing two or more active hydrogens in the molecule, the active hydrogen may be directly bonded to the main chain constituting the polymer compound, or may be bonded via a predetermined group. Further, the active argon may be contained in the structural unit constituting the polymer compound in 32 323253 201223979, and in this case, it may be included in each structural unit or may be included only in a part of the structural unit. Further, the active hydrogen may be bonded only to the terminal of the polymer compound. Specific examples of the polymer compound having two or more active hydrogen atoms in the molecule include a compound having a structure in which two or more active argon-containing groups are bonded to a polymer (polymer) structure. The group containing an active hydrogen may, for example, be an amine group, a hydroxyl group or a thiol group. Among these, an amine group and a hydroxyl group which are excellent in reactivity with an isocyanate group or an isothiocyanate group are preferable. Such a polymer compound is produced by polymerizing a polymerizable monomer containing a reactive hydrogen-containing group in a molecule or copolymerizing with another copolymerizable compound to form a polymer. When a polymer compound containing two or more active hydrogens in the molecule is produced, the molar ratio of the polymerizable monomer containing the active hydrogen-containing monomer is preferably from 1 to 50 in all the polymerizable monomers participating in the polymerization. The ear % is more preferably 3 to 30 mol%, and still more preferably 5 to 20 mol%. By adjusting the molar ratio of the aforementioned polymerizable monomer to this range, a crosslinked structure is sufficiently formed inside the insulating layer. A polymer compound containing two or more active hydrogen atoms in the molecule is preferably a group having a structure containing a cyclic carbonate. Thereby, the compatibility with the polymer compound (A) is improved. In this case, a polymerizable monomer of a raw material of the repeating unit represented by the formula (1) is used as the other copolymerizable compound. The amount of the repeating unit represented by the formula (1) in the polymer compound containing two or more active hydrogens in the molecule is 10 to 90 mol% based on the total of the repeating units of the polymer compound. The ideal is 30 to 33 323253 201223979 85 mole%, more preferably 45 to 75 mole%. When the amount of the repeating unit represented by the formula (1) is less than 10 mol%, the compatibility with the polymer compound (A) is deteriorated, and when it exceeds 90 mol%, the formation of the crosslinked structure is insufficient. In order to increase the crosslinking density of the organic thin film transistor insulating layer, it is preferred that the polymer compound containing two or more active hydrogens in the molecule contains a photodimerization reaction group. In this case, a polymerizable monomer of a raw material of a repeating unit represented by the formula (2) or a polymerizable monomer of a raw material of a repeating unit represented by the formula (3) is used as the other copolymerizable compound. When the polymer compound containing two or more active hydrogens in the molecule contains at least one repeating unit selected from the group consisting of a repeating unit represented by the formula (2) and a repeating unit represented by the formula (3), the above repeating The amount of the unit is 50 mol% or less, more preferably 3 to 30 mol%, more preferably 5 to 25 mol%, based on the total of the repeating units of the polymer compound. When the amount of the above repeating unit exceeds 50 mol%, the storage stability is lowered. When the polymerizable monomers are polymerized, a photopolymerization initiator and a thermal polymerization initiator may be used. Further, the same as those described above for the polymerizable monomer, the photopolymerization initiator, and the thermal polymerization initiator. The polymerizable monomer containing a group containing an active hydrogen may, for example, be an aminostyrene, a hydroxystyrene, a vinyl benzoyl alcohol, an aminoethyl methacrylate, an ethylene glycol monovinyl ether or a 4-hydroxybutyl acrylate. Ester and the like. The polymerizable monomer containing a group containing an active hydrogen is preferably one having a hydroxyl group in the molecule. Further, a polymer compound containing two or more active hydrogens in the molecule is also suitably used as a novolac resin of 34 323253 201223979 by condensing a phenol compound with furfural in the presence of an acid catalyst. The converted polystyrene having a polymer compound containing two or more active hydrogen groups in the molecule has a weight average molecular weight of 1,000 to 1,000,000, more preferably 3,000 to 500,000, still more preferably 10,000 to 100,000, for example, 20,000 to 50,000. Thereby, the effect of improving the flatness and uniformity of the insulating layer is obtained. [Organic thin film transistor insulating layer material] An organic thin film transistor insulating layer material is obtained by mixing the polymer compound (A) and the active hydrogen compound (B). The ratio of the mixing of the two is based on the second functional group formed by irradiating the polymer compound (A) with electromagnetic waves or heating the polymer compound (A), and the active hydrogen-containing group of the active hydrogen compound (B). The ear ratio meter is preferably adjusted to 60/100 to 150/100, more preferably 70/100 to 120/100, and more preferably 90/100 to 110/100. When the ratio is less than 60/100, the active hydrogen is excessive, and the effect of reducing the hysteresis is small. When the ratio exceeds 150/100, the functional group reactive with active hydrogen is excessive, and the absolute value of the threshold voltage is increased. The organic thin film transistor insulating layer material of the present invention may further contain a solvent for mixing and adjusting the viscosity, or an additive used in combination with a crosslinking agent for crosslinking the polymer compound (A). The solvent to be used is an ether solvent such as tetrahydrofuran or diethyl ether, an aliphatic hydrocarbon solvent such as hexane, an alicyclic hydrocarbon solvent such as cyclohexane, an unsaturated hydrocarbon solvent such as pentene or an aromatic hydrocarbon such as diphenylbenzene. A ketone solvent such as a solvent or acetone, an acetate solvent such as butyl acetate, an alcohol solvent such as isopropyl alcohol, a chlorine solvent such as trichlorosilane or a mixed solvent thereof. 35 323253 201223979 Further, as the additive, a catalyst for promoting a crosslinking reaction, a leveling agent, a viscosity modifier, a fluorine-containing resin containing a photodimerization reaction group, or the like can be used. The gas-containing resin containing a photodimerization reaction group is particularly suitable as an additive for the organic thin film transistor insulating layer material of the present invention because of its effect of lowering the surface free energy. The fluorine-containing resin having a photodimerization reaction group is a polymerizable monomer containing a polymerizable monomer having a fluorine atom in a molecule, and a raw material of a repeating unit represented by the formula (2) or a formula (3) The polymerizable monomer of the starting material of the repeating unit is copolymerized or copolymerized with another copolymerizable compound to form a polymer. σ A polymerizable monomer containing a fluorine atom, and examples thereof include 2, 3, 4, 5, 6-pentafluoroethylene, 2-di-I methylstyrene, 3-trifluoromethylstyrene, and trifluoromethyl. Stupid ethylene, 2, 2, 2-trifluoroethyl acrylate, 2, 2, 3, 3, 3-pentafluoropropyl acrylate, 2-(perfluorobutyl)ethyl acrylate, acrylic acid 3_Perfluorobutyl-2-hydroxypropyl ester, 2-(perfluorohexyl)ethyl acrylate, 3_perfluorohexyl-2-hydroxypropyl acrylate, 2-(perfluorooctyl)ethyl acrylate, acrylic acid 3_Perfluorooctyl-2-hydroxypropyl ester, 2-(perfluorodecyl)ethyl acrylate, 2-(perfluoro-3-methylbutyl)ethyl acrylate, acrylic acid 3_(perfluoro_3_A Benzyl)-2-hydroxypropyl ester, 2-(perfluoro-5-methylhexyl)ethyl acrylate, 2-(perfluoro-3-mercaptobutyl)-2-hydroxypropyl acrylate, acrylic acid 3 -(Perfluoro-5-decylhexyl)-2-hydroxypropyl ester, 2-(perfluoro-7-fluorenyloctyl)ethyl acrylate, 3-(perfluoro-7-fluorenyloctyl) acrylate 2-hydroxypropyl ester, 1 hydrazine acrylate, 1 hydrazine, 3 Η-tetrafluoropropyl acrylate, 1 hydrazine acrylate, 1 hydrazine, 5 Η-octafluoropentyl pentyl ester, 1 hydrazine acrylate, 1 fluorene, 7 fluorene heptafluoroheptyl ester, acrylic acid in, 1 Torr, 9Η-hexadecafluorodecyl ester, C 36 323253 201223979 enoic acid 1H-1-(trifluoromethyl)trifluoroethyl ester, acrylic acid 1H, 1H, 3H-hexafluorobutyl ester, methacrylic acid 2, 2, 2- Trifluoroethyl ester, 2,2,3,3,3_pentafluoropropyl methacrylate, 2-(perfluorobutyl)ethyl methacrylate, 3_perfluorobutyl-2-hydroxypropyl methacrylate , 2-(perfluorohexyl)ethyl methacrylate, 3-perfluorohexyl-2-hydroxypropyl methacrylate, 2-(perfluorooctyl)ethyl methacrylate, 3-perfluorooctyl methacrylate 2-hydroxypropyl ester, 2-(perfluorodecyl)ethyl methacrylate, 2-(perfluoro_3_mercaptobutyl)ethyl methacrylate, 3-(perfluoro-3) methacrylate -nonylbutyl)_2-hydroxypropyl ester, 2-(perfluoro-5-methylhexyl)ethyl methacrylate, 2-(perfluoro-3-methylbutyl)-2-hydroxypropyl methacrylate Ester, 3-(perfluoro-5-methylhexyl)-2-hydroxypropyl methacrylate, 2-(perfluoro-7-methyloctyl)ethyl methacrylate, 3-(perfluoro- methacrylate) 7-Methyloctyl)-2-hydroxypropyl ester, 1H, 1H, 3H-tetrafluoropropyl methacrylate, 1H, 1H, 5H-octafluoromethacrylate酉曰Methyl methacrylate 1H,1H,7H-dodecafluoroheptyl ester, ih,ih,9h-hexadecafluorodecyl methacrylate, methacrylic acid 1{1_丨_(trifluoromethyl)trifluoroethyl Ester, 1H, 1H, 3H-hexafluorobutyl methacrylate. When the fluorine-containing resin is produced, the molar ratio of the polymerizable monomer containing a fluorine atom is from 1 to 9 mol%, more preferably from 3 to 10%, based on the total amount of the polymerizable monomer to be polymerized. 85% by mole, more preferably 45 to mole%. When the amount of the polymerizable monomer containing a fluorine atom is not less than 5% by mole, the effect of reducing the hysteresis of the field effect type organic thin film transistor is insufficient, and the affinity with the organic semiconductor material is deteriorated, and it is difficult to be more than 90 moles. The active layer is laminated thereon. Further, the amount of the repeating unit represented by the formula (2) or the repeating unit represented by the formula (3) 323253 37 201223979 is preferable to the total of the repeating units of the fluorine-containing resin. It is 1 to 50% by mole, more preferably 3 to 30% by mole, still more preferably 5 to 20% by mole. When the amount of the polymerizable monomer is less than 1 mol%, the formation of the crosslinked structure is insufficient, and when it exceeds 50 mol%, the storage stability is lowered. The fluorine-containing resin is preferably a group having a structure containing a cyclic carbonate. Thereby, the compatibility with the polymer compound (A) and the active argon compound (B) is improved. In this case, a polymerizable monomer of a raw material of the repeating unit represented by the formula (1) is used as the other copolymerizable compound. In the above-mentioned resin, the amount of the repeating unit represented by the formula (1) is 50 mol% or less, more preferably 3 to 30 mol%, more preferably 3 to 30 mol%, based on the total of the repeating units of the polymer compound. Ideally 5 to 25 mol%. When the amount of the repeating unit exceeds 50 mol%, the affinity with the organic semiconductor material is deteriorated, and it is difficult to laminate the active layer thereon. The amount of the fluorine-containing resin added to the organic thin film transistor insulating layer material is adjusted to 0. The concentration of the fluorine-containing resin in the organic thin film transistor insulating layer material is adjusted to 0. 1 to 50% by weight, more desirably 1 to 40% by weight, still more desirably 5 to 30% by weight. When the amount of the fluorine-containing resin added exceeds the above upper limit, the flatness of the organic thin film transistor insulating layer is deteriorated. The organic thin film transistor insulating layer material of the present invention is used to form a composition of an insulating layer contained in an organic thin film transistor. It is preferred to use an overcoat layer or a gate insulating layer, particularly a gate insulating layer, for forming an organic thin film transistor. The organic thin film transistor insulating layer material is preferably composed of a composition of a thin film transistor layer of 38 323253 201223979 and an organic thin film transistor gate insulating layer, and more preferably an organic thin film transistor gate insulating layer composition. . [Organic Thin Film Transistor] Fig. 1 is a schematic cross-sectional view showing the configuration of a bottom gate top contact type organic thin film transistor according to an embodiment of the present invention. The organic thin film transistor includes a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, and an organic semiconductor layer 4 formed on the gate insulating layer 3. The source electrode 5 and the drain electrode 6 formed on the organic semiconductor layer 4 and the cover layer 7 covering the entire element are formed next to the channel portion. The bottom gate top contact type organic thin film transistor can form a gate insulating layer on the gate electrode by forming a gate electrode on the substrate, and then form an organic semiconductor layer on the gate insulating layer, and then organically A source electrode and a drain electrode are formed on the semiconductor layer, and then a cover layer is formed and manufactured. The organic thin film transistor insulating layer material of the present invention is suitable for forming a gate insulating layer as a composition of an organic thin film transistor insulating layer. Moreover, it can also be used as a coating for forming an organic thin film transistor cover layer. Fig. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor according to an embodiment of the present invention. The organic thin film transistor includes a substrate 1, a gate electrode 2 formed on the substrate 1, and a gate insulating layer 3 formed on the gate electrode 2, and is formed on the gate insulating layer 3 so as to be adjacent to the channel portion. Source 39 323253 201223979 Electrode 5 and drain electrode 6, organic semiconductor layer 4 formed on source electrode 5 and drain electrode 6, and cover layer 7 covering the entire element. The bottom gate bottom contact type organic thin film transistor can form a gate insulating layer on the gate electrode by forming a gate electrode on the substrate, and form a source electrode and a drain electrode on the gate insulating layer. The electrode is then formed by forming an organic semiconductor layer on the source electrode and the drain electrode, and then forming a cap layer. The organic thin film transistor insulating layer material of the present invention is suitable for forming a gate insulating layer as a composition of an organic thin film transistor gate insulating layer. Further, it can be used as a composition for an organic thin film transistor cover layer to form a cover layer. The gate insulating layer or the cap layer is formed by adding a solvent or the like to the organic thin film transistor gate insulating layer material as needed to prepare an insulating layer coating liquid, and applying the insulating layer coating liquid to the gate electrode. The surface of the layer below the insulating layer or the cover layer is then dried and hardened. The organic solvent used for the insulating layer coating liquid is not particularly limited as long as it dissolves the organic thin film transistor gate insulating layer material, and is preferably an organic solvent having a boiling point of 100 ° C to 200 ° C at normal pressure. . The organic solvent may, for example, be 2-heptanone (boiling point: 151 ° C), propylene glycol monoterpene ether acetate (boiling point: 146 ° C), or the like. A leveling agent, a surfactant, a curing catalyst, and the like may be added to the insulating layer coating liquid as needed. The organic thin film transistor gate insulating material of the present invention can also be used as a composition of an organic thin film transistor gate insulating layer to form a gate insulating layer. The insulating layer coating liquid can be applied to the gate electrode by a conventional spin coat, die coater, screen printing, ink jet printing, etc. 40 323253 201223979. The resulting coating layer is allowed to dry as needed. Here, "drying" means removing the solvent in the applied resin composition. Then, the dried coating layer is hardened. Hardening refers to crosslinking of an organic thin film dielectric insulating material. Crosslinking of the dielectric insulating layer material is carried out, for example, by applying electromagnetic waves or heat to the coating layer. Thereby, a second functional group is formed from the first functional group of the polymer compound (A), and reacts with the active argon-containing group of the active hydrogen compound (B). Alternatively, the intersection of the dielectric insulating layer materials is performed, for example, by irradiating light to the coating layer. Thereby, the polymer is dimerized by a radical coupling reaction or a cyclization reaction of the photodimerization reaction of the polymer compound (A). It is preferred to apply electromagnetic waves or heat to the coating layer and to irradiate the coating layer with light. This is due to the increase in the crosslink density of the insulating layer. If the crosslink density of the insulating layer is increased, it is considered to be further: the polarization at the time of applying a voltage. As a result, in particular, when used in the gate insulating layer, the absolute value and hysteresis of the threshold voltage (Vth) of the organic thin film transistor become small. When heat is applied to the coating layer, the coating layer is heated to a temperature of from about 8 Torr to 25 Torr, more desirably from about 1 GG to 23 Gt: for about 5 to m minutes, and desirably about 10 160 minutes. When the heating temperature is too low and the heating time is too short, the crosslinking of the compound in the insulating layer is insufficient, the heating temperature is too high, and the heating time is too long, and the insulating layer may be damaged. For the (four) layer of electromagnetic waves or microwaves plus ',, and ', the conditions are the same as those applied to the coating layer. The field-polymerization reaction group is an aryl group in which a hydrogen atom is replaced by a dentate group. In the case of 323253 41 201223979, the base is bonded to each other by electromagnetic wave irradiation or energy absorption of an electron beam, preferably by irradiation of ultraviolet rays or energy absorption of electron beams. The wavelength of the electromagnetic wave to be irradiated is 360 nm or less', and desirably 150 to 300 nm. When the wavelength of the electromagnetic wave to be irradiated exceeds 360 nm, the crosslinking of the compound contained in the material of the organic thin film transistor insulating layer may be insufficient. § Photopolymerization reaction group is an acetyl group substituted by an aryl group at the 2-position hydrogen atom, α, a 10,000-unsaturated carbonyl group substituted by an aryl group, and a cold atom = a hydrogen atom substituted by an aryl group In the case of α, Qian and Weiji, the bases are bonded to each other by electromagnetic wave irradiation or energy absorption of electron beams, preferably by irradiation of ultraviolet rays or energy absorption of electron beams. The wavelength of the electromagnetic wave to be irradiated is _nm or less, preferably (10) to m. When the wavelength of the electromagnetic wave to be irradiated exceeds 400 nm, the crosslinking of the compound contained in the material of the organic thin film transistor insulating layer is insufficient. The irradiation of ultraviolet rays can be carried out, for example, by using an exposure device for producing a semiconductor or a uv lamp for curing a UV curable resin. The irradiation of the electron beam can be performed, for example, using an ultra-small electron beam irradiation tube. Heating can be carried out by using a heater, an oven or the like. Other irradiation conditions and heating conditions are appropriately determined depending on the type and amount of the photodimerization reaction group. On the gate insulating layer, a self-assembled monomolecular film (self_assembled core layer) can also be formed. The self-assembled single molecular layer can be dissolved, for example, by dissolving 丨 to (7)% by weight in the organic solvent. A solution obtained by treating a gate insulating film with a compound or a compound of a decyloxy group (IV). The base gas compound may, for example, be a methyl triphosite, an ethyl trigas 323253 42 201223979 decane or a butyl group. Chlorodecane, decyltrichlorodecane, octadecyltrioxane, etc. The alkyl alkoxy decane compound may, for example, be methyltrimethoxy decane, ethyltrimethoxy decane or butyltrimethoxy decane. , fluorenyltrimethoxy decane, octadecyltrimethoxy decane, etc. The substrate 1, the gate electrode 2, the source electrode 5, the drain electrode 6 and the organic semiconductor layer are composed of materials and methods which are generally used. The material of the substrate is a resin or plastic plate or film, a glass plate, a stone plate, etc. The material of the electrode is chromium, gold, silver, aluminum, molybdenum, etc., by vapor deposition, sputtering, A conventional method such as a printing method or an inkjet method is formed. In the case of organic semiconductors, 7-inch conjugated polymers are widely used, and polypyrroles, polythiophenes, polyanilines, polyacrylamines, fluorenes, poly D-caps, polyfluorenes, and the like can be used. Poly(p-phenylenevinlene), etc. Further, a low molecular substance which is soluble in an organic solvent, such as a polycyclic aromatic derivative such as pentacene, can be used. , phthalocyanine derivatives, perylene derivatives, tetrathiafulvalene derivatives, tetracyano stilbene derivatives, fullerenes, carbon nanotubes Specific examples include condensates of 9,9-di-n-octyl-2,7-di(ethyl borate) and 5,5'-dibromo-2,2'-bisthiophene. The organic semiconductor is formed by, for example, adding a solvent to the organic semiconductor to modulate the organic semiconductor coating liquid ', and applying the organic semiconductor coating liquid to the gate insulating layer, to make the organic semiconductor The coating liquid is dried and carried out. In the present invention, the gate insulating layer is formed. Resin member 43 323253 201223979 has a phenol moiety and has affinity with an organic semiconductor compound. Therefore, a uniform flat interface is formed between the organic semiconductor layer and the gate insulating layer by the above coating drying method. The solvent to be used is not particularly limited as long as it is a dissolvable or dispersible organic semiconductor, and is preferably a solvent having a boiling point of from 50 ° C to 200 ° C under normal pressure. The solvent may, for example, be trioxane or hydrazine. Benzene, anisole, 2-heptanone, propylene glycol monoterpene ether acetate, etc. The organic semiconductor coating liquid can be the same as the above-mentioned insulating layer coating liquid by a conventional spin coating method or a die coater. , screen printing, inkjet printing, etc. are applied to the gate insulating layer. The organic thin film transistor of the present invention can also be coated with a covering material for the purpose of protecting the organic thin film transistor and improving the smoothness of the surface. The member for display having an organic thin film transistor can be suitably produced by using the organic thin film transistor insulating layer material of the present invention. A display member having a member for a display can be suitably produced by using a member for a display having the organic thin film transistor. EXAMPLES Hereinafter, the present invention will be described based on examples, but the present invention is not limited to the examples. [Synthesis Example 1] 4-vinyl-1,3-dioxol-2-one (manufactured by Aldrich Co., Ltd.) 5. 00g, vinyl cinnamate (made by Aldrich) 09g, 2-(0-[1'-decyl propyleneamino]carboxylamino) methacrylate, acetaminophen (product name "Karenz MOI-BM", manufactured by Showa Denko) 3. 00g, 2, 2' - 44 323253 201223979 azobis(2-mercaptopropionitrile) 0. 05g, propylene glycol monoterpene ether acetate (made by Wako Pure Chemical Industries Co., Ltd.) 09 g was placed in a 50 ml pressure-resistant container (manufactured by ACE), bubbled with argon, and then condensed and polymerized in an oil bath at 60 ° C for 20 hours to obtain a viscous propylene glycol monoterpene ether B in which the polymer compound 1 was dissolved. Acid solution. The polymer compound 1 has the following repeating unit. The numbers enclosed in parentheses indicate the molar ratio of the repeating unit.

高分子化合物1 所得的高分子化合物1之從標準聚苯乙烯求得的重量平均分子量為39000(島津製GPC，「Tskgel super HM-H」1 支+「Tskgel super H2000」1 支，移動相=THF)。 [合成例2 ] 將4-乙烯基-1,3-二氧雜環戊烧-2-酮（Aldrich製） 6. 00g、桂皮酸乙稀酯（Aldrich製）2. 62g、丙烯酸4-經基丁酯（興人股份有限公司製）1. 08g、2, 2’ -偶氮雙（2-甲基丙腈）0.05g、丙二醇單甲醚乙酸酯（和光純藥製）6.50g放入 50毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在60°C的油浴中聚合20小時，得到溶解有高分子化合物2 的黏稠丙二醇單甲醚乙酸酯溶液。高分子化合物2具有下 45 323253 201223979 述重複單元。括號所附的數字表示重複單元的莫耳比例。高分子化合物2為在分子内具有2個以上活性氳的化合物。The polymer compound 1 obtained from the polymer compound 1 has a weight average molecular weight of 39000 (standardized by Shimadzu GPC, 1 part of "Tskgel super HM-H" + "Tskgel super H2000", mobile phase = THF). [Synthesis Example 2] 4-vinyl-1,3-dioxolone-2-one (manufactured by Aldrich) 6. 00 g, ethyl cinnamate (manufactured by Aldrich) 2.62 g, acrylic acid 4-jing 1,8 g, 2, 2'-azobis(2-methylpropionitrile) 0.05 g, propylene glycol monomethyl ether acetate (manufactured by Wako Pure Chemical Industries Co., Ltd.) 6.50 g In a 50 ml pressure-resistant container (manufactured by ACE), after bubbling with argon gas, it was tightly packed and polymerized in an oil bath at 60 ° C for 20 hours to obtain a viscous propylene glycol monomethyl ether acetate in which the polymer compound 2 was dissolved. Solution. The polymer compound 2 has the repeating unit of the following 45 323253 201223979. The numbers appended to the brackets indicate the molar ratio of the repeating unit. The polymer compound 2 is a compound having two or more active oximes in the molecule.

高分子化合物2 所得的高分子化合物2之從標準聚苯乙烯求得的重量平均分子量為252000(島津製GPC，「Tskgel super HM-H」 1 支+「Tskgel super H2000」1 支，移動相=THF)。 [合成例3] 將4-乙烯基-1,3-二氧雜環戊烷-2-酮（Aldrich製） 6.00g、桂皮酸乙烯酯（Aldrich製）2.62g、4-胺基苯乙烯 (八1(11^吡製）0.892、2,2’-偶氮雙（2-曱基丙腈）0.052、丙二醇單曱醚乙酸酯（和光純藥製）14. 34g放入50毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在6(TC的油浴中聚合20小時，得到溶解有高分子化合物3的黏稠丙二醇單曱醚乙酸酯溶液。高分子化合物3具有下述重複單元。括號所附的數字表示重複單元的莫耳比例。高分子化合物3為在分子内具有2個以上活性氫的化合物。 46 323253 201223979The polymer compound 2 obtained from the polymer compound 2 has a weight average molecular weight of 252,000 from a standard polystyrene (GPC, Shimadzu), "Tskgel super HM-H" 1 branch + "Tskgel super H2000", mobile phase = THF). [Synthesis Example 3] 4-vinyl-1,3-dioxol-2-one (manufactured by Aldrich) 6.00 g, vinyl cinnamate (manufactured by Aldrich), 2.62 g, 4-aminostyrene (4-aminostyrene)八1(11^Peel) 0.892, 2,2'-azobis(2-mercaptopropionitrile) 0.052, propylene glycol monoterpene ether acetate (manufactured by Wako Pure Chemical Industries, Ltd.) 14. 34g into 50 ml withstand voltage In a container (manufactured by ACE), after bubbling with argon gas, the mixture was condensed and polymerized in an oil bath of 6 (TC) for 20 hours to obtain a viscous propylene glycol monoterpene ether acetate solution in which the polymer compound 3 was dissolved. 3 has the following repeating unit: The number attached to the parenthesis indicates the molar ratio of the repeating unit. The polymer compound 3 is a compound having two or more active hydrogens in the molecule. 46 323253 201223979

高分子化合物3 所得的高分子化合物3之從標準聚苯乙烯求得的重量平均分子量為24000(島津製GPC，「Tskgel super HM-H」1 支+「Tskgel super H2000」1 支，移動相=THF)。 [合成例4] 將2, 3, 4, 5, 6-五氟苯乙烯（Aldrich製）8. 00g、4-乙烯基-1，3-二氧雜環戊烷-2-酮（Aldrich製）1. 34g、桂皮酸乙烯酯（Aldrich製）1. 03g、2, 2’ -偶氮雙（2-曱基丙腈） 0.05g、丙二醇單甲醚乙酸酯（和光純藥製）15.63g放入50 毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在 60°C的油浴中聚合20小時，得到溶解有高分子化合物4的黏稠丙二醇單曱醚乙酸酯溶液。高分子化合物4具有下述重複單元。括號所附的數字表示重複單元的莫耳比例。The polymer compound 3 obtained from the polymer compound 3 has a weight average molecular weight of 24,000 from a standard polystyrene (GPC of Shimadzu, 1 piece of "Tskgel super HM-H" + 1 part of "Tskgel super H2000", mobile phase = THF). [Synthesis Example 4] 2, 3, 4, 5,6-pentafluorostyrene (manufactured by Aldrich) 8. 00 g, 4-vinyl-1,3-dioxol-2-one (manufactured by Aldrich) 1. 34g, vinyl cinnamate (made by Aldrich) 1. 03g, 2, 2'-azobis(2-mercaptopropionitrile) 0.05g, propylene glycol monomethyl ether acetate (made by Wako Pure Chemical Industries) 15.63 g was placed in a 50 ml pressure-resistant container (manufactured by ACE), bubbled with argon, and then condensed and polymerized in an oil bath at 60 ° C for 20 hours to obtain a viscous propylene glycol monoterpene ether B in which the polymer compound 4 was dissolved. Acid solution. The polymer compound 4 has the following repeating unit. The numbers appended to the brackets indicate the molar ratio of the repeating unit.

47 323253 201223979 高分子化合物4 所得的高分子化合物4之從標準聚苯乙烯求得的重量平均分子量為79000(島津製GPC，「Tskgel super HM-H」1 支+「Tskgel super H2000」1 支’移動相=THF) 〇 [合成例5] 於含有9, 9-二正辛基第-2, 7-二（硼酸伸乙醋）6. 40g 與5, 5’-二溴-2, 2’-雙噻吩4· 00g之甲苯（80毫升）中，在氮氣下，添加四（三苯基膦）鈀0.18g、曱基三辛基氯化銨 (Aldrich製，商品名「Aliquat 336」（註冊商標））l.〇g以及2M的碳酸鈉水溶液24毫升。激烈攪拌該混合物，進行加熱回流24小時。將黏稠的反應混合物注入丙酮500毫升中，使纖維狀的黃色聚合物沈澱。藉由過濾該沈澱物而予以收集，以丙酮洗淨，於真空烤箱中在6〇°C下乾燥一晚。所得的聚合物稱為高分子化合物5。高分子化合物5具有下述重複單元。η表示重複單元的數目。高分子化合物5 之從標準聚苯乙烯求得的重量平均分子量為61〇〇〇(島津製 GPC ’「Tskgel super ΗΜ-Η」1 支+「Tskgel super Η2000」 1支，移動相=THF)。47 323253 201223979 Polymer compound 4 The polymer compound 4 obtained has a weight average molecular weight of 7900 from standard polystyrene (GPC of Shimadzu, 1 piece of "Tskgel super HM-H" + 1 piece of "Tskgel super H2000") Mobile phase = THF) 〇 [Synthesis Example 5] in the presence of 9,9-di-n-octyl-2,7-di (boronic acid vinegar) 6.40g and 5, 5'-dibromo-2, 2' - Bis-thiophene 4·00 g of toluene (80 ml), 0.18 g of tetrakis(triphenylphosphine)palladium and decyltrioctyl ammonium chloride (manufactured by Aldrich, trade name "Aliquat 336" (registered) under nitrogen Trademark)) l. 〇g and 2M aqueous sodium carbonate solution 24 ml. The mixture was vigorously stirred and heated to reflux for 24 hours. The viscous reaction mixture was poured into acetone 500 ml to precipitate a fibrous yellow polymer. The precipitate was collected by filtration, washed with acetone, and dried overnight at 6 ° C in a vacuum oven. The obtained polymer is referred to as polymer compound 5. The polymer compound 5 has the following repeating unit. η represents the number of repeating units. The weight average molecular weight of the polymer compound 5 obtained from the standard polystyrene was 61 〇〇〇 (1 GTS of "Tskgel super ΗΜ-Η" + 1 "Tskgel super Η 2000", and mobile phase = THF).

面分子化合物5 48 323253 201223979 [合成例6] 將4-乙烯基-1,3-二氧雜環戊烷-2-酮（Aldrich製） 6. 00g、苯乙烯（和光純藥製）3. 28g、曱基丙烯酸2-(0-[1’ -甲基亞丙基胺基]羧基胺基）乙酯（昭和電工製，商品名「Karenz M0I-BM」）5. 05g、2, 2’ -偶氮雙（2-曱基丙腈） 0.07g、丙二醇單曱醚乙酸酯（和光純藥製）9.60g放入50 毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在 60°C的油浴中聚合20小時，得到溶解有高分子化合物6的黏稠丙二醇單曱醚乙酸酯溶液。高分子化合物6具有下述重複單元。括號所附的數字表示重複單元的莫耳比例。Molecular Compound 5 48 323253 201223979 [Synthesis Example 6] 4-Vinyl-1,3-dioxol-2-one (manufactured by Aldrich) 6. 00 g, styrene (manufactured by Wako Pure Chemical Industries, Ltd.) 3. 28g, 2-(0-[1'-methylpropylideneamino]carboxyamino)ethyl methacrylate (manufactured by Showa Denko, trade name "Karenz M0I-BM") 5. 05g, 2, 2' - azobis(2-mercaptopropionitrile) 0.07 g, propylene glycol monoterpene ether acetate (manufactured by Wako Pure Chemical Industries, Ltd.), 9.60 g, placed in a 50 ml pressure vessel (manufactured by ACE), and bubbled with argon gas. The mixture was condensed and polymerized in an oil bath at 60 ° C for 20 hours to obtain a viscous propylene glycol monoterpene ether acetate solution in which the polymer compound 6 was dissolved. The polymer compound 6 has the following repeating unit. The numbers appended to the brackets indicate the molar ratio of the repeating unit.

高分子化合物6 所得的高分子化合物6之從標準聚苯乙烯求得的重量平均分子量為66000(島津製GPC，「Tskgel super HM-H」1 支 +「Tskgel super H2000」1 支，移動相=THF)。 [合成例7 ] 將4-乙烯基-1，3-二氧雜環戊烷-2-酮（Aldrich製） 6. 00g、苯乙烯（和光純藥製）4. 38g、丙烯酸4-羥基丁酯（興人股份有限公司製）1. 51g、2, 2’ -偶氮雙（2-曱基丙腈） 49 323253 201223979 0. 06g、丙二醇單甲醚乙酸酯（和光純藥製）17. 92g放入50 毫升耐壓容器（ACE製）中，以氬氣冒泡後，予以密栓，在 60°C的油浴中聚合20小時，得到溶解有高分子化合物7的黏稠丙二醇單甲醚乙酸酯溶液。高分子化合物7具有下述重複單元。括號所附的數字表示重複單元的莫耳比例。高分子化合物7為在分子内具有2個以上活性氫的化合物。The polymer compound 6 obtained from the polymer compound 6 has a weight average molecular weight of 66,000 from standard polystyrene (GPC, Shimadzu), "Tskgel super HM-H" 1 branch + "Tskgel super H2000", mobile phase = THF). [Synthesis Example 7] 4-vinyl-1,3-dioxol-2-one (manufactured by Aldrich) 6. 00 g, styrene (manufactured by Wako Pure Chemical Industries, Ltd.) 4.38 g, 4-hydroxybutyl acrylate Ester (manufactured by Xingren Co., Ltd.) 1. 51g, 2, 2'-azobis(2-mercaptopropionitrile) 49 323253 201223979 0. 06g, propylene glycol monomethyl ether acetate (made by Wako Pure Chemical Industries, Ltd.) 17 92 g was placed in a 50 ml pressure-resistant container (manufactured by ACE), bubbled with argon, and then condensed and polymerized in an oil bath at 60 ° C for 20 hours to obtain a viscous propylene glycol monomethyl ether in which the polymer compound 7 was dissolved. Acetate solution. The polymer compound 7 has the following repeating unit. The numbers appended to the brackets indicate the molar ratio of the repeating unit. The high molecular compound 7 is a compound having two or more active hydrogens in the molecule.

高分子化合物7 所得的高分子化合物7之從標準聚苯乙烯求得的重量平均分子量為40000(島津製GPC，「Tskgel super HM-H」1 支+「Tskgel super H2000」1 支，移動相=THF)。 [實施例1] (有機薄膜電晶體絕緣層材料及場效型有機薄膜電晶體的製造）將合成例1所得的高分子化合物1的丙二醇單曱醚乙酸酯溶液2. 00g、合成例2所得的高分子化合物2的丙二醇單甲醚乙酸酯溶液3. 55g、四氩呋喃7. 00g放入30毫升的試樣瓶中，一邊攪拌一邊溶解，調製含有有機薄膜電晶體絕緣層材料的均勻塗佈溶液。將所得的塗佈溶液使用孔徑0.2//m的薄膜過濾器過 50 323253 201223979 滤，在將其旋轉塗佈於附有鉻電極之玻璃基板上後，於加熱板上以100 c乾燥10分鐘。然後，使用對準機（aii卵⑴ (Canon 製1.521)照射 _〇raj/cin2 的 uv 光（波長 36㈣，再於氮氣中’在加熱板上以2抓般燒3〇分鐘，得到閘極絕緣層。中，製么ιΐ:刀二化t物5溶解於作為溶劑之三氣曱烷胳1 .重4%的溶液（有機半導體組成物），將其以相顧器過濾、，調製塗佈液。所:Γ塗:液藉由旋轉塗佈法而塗佈於前述間極絕緣層上，械具錢6G⑽之厚度之活性層，然後，藉由使用金屬遮罩之真空蒸鍍法，在活性層上形成通道長度· m、通道寬度2ΠΠΠ之源極電極及没極電極（從活性層側，依序具有氧化鉬、金的積層構造），藉此而製作場膜電晶體。导 [實施例2] 機薄膜電晶體的 (有機薄膜電晶體絕緣層材料及場效型有製造）將合成例1所得的高分子化合物i的丙二醇單甲峻乙酸醋溶液0.23g、合成例3所得的高分子化合物3的丙二醇單曱趟乙酸醋溶液G.61g、丙二醇單曱越乙酸醋Q恤、合成例4所得的高分子化合物4的丙二醇單甲醚乙酸酿溶液0.073g、四氬咳喃〇.3g放入1〇毫升的試樣瓶中，一邊擾拌-邊溶解’調製含有有_膜電晶體絕緣層材料的均勻塗佈溶液。 323253 51 201223979 將所得的塗佈溶液使用孔徑〇.2em的薄膜過濾器過滤，在將其旋轉塗佈於附有鉻電極之玻璃基板上後，在加熱板上以100°c乾燥10分鐘。然後，使用對準機（Canon製； PLA-521)照射6000mJ/cm2的UV光（波長365nm)，再於氮氣中，在加熱板上以22(TC煅燒30分鐘’得到閘極絕緣層。然後，與實施例1同樣地形成活性層、源極電極及汲極電極’製作場效型有機薄膜電晶體。 [實施例3] (有機薄膜電晶體絕緣層材料及場效型有機薄膜電晶體的製造）除了將高分子化合物4的丙二醇單曱醚乙酸酯溶液的量改為0· 147g以外，與實施例2同樣地製作場效型有機薄膜電晶體。 [實施例4] (有機薄膜電晶體絕緣層材料及場效型有機薄膜電晶體的製造）除了將高分子化合物4的丙二醇單曱醚乙酸酯溶液的量改為0· 293g ’且將四氫呋喃的量改為〇. 5g以外，與實施例2同樣地製作場效型有機薄膜電晶體。 [實施例5] (有機薄膜電晶體絕緣層材料及場效型有機薄膜電晶體的製造）將高分子化合物6的丙二醇單甲醚乙酸酯溶液 UOg、高分子化合物7的丙二醇單曱醚乙酸酯溶液 52 323253 201223979 2. 49g、丙二醇單甲醚乙酸酯3. 00g放入30毫升的試樣瓶中邊攪拌一邊溶解，調製含有有機薄膜電晶體絕緣層材料的均句塗佈溶液。將所得的塗佈溶液使用孔徑0.2/ζιη的薄膜過濾器過 f ’在將其旋轉塗佈於附有鉻電極之玻璃基板上後，於氮氣中’在加熱板上以22(TC煅燒30分鐘，得到絕緣層。然後’與實施例1同樣地形成活性層、源極電極及汲極電極’製作場效型有機薄膜電晶體。 <電晶體特性的評價> 對如此製作的場效型有機薄膜電晶體，以使閘極電壓 Vg於0至-4〇v變化，並使源極汲極間電壓vsd於〇至-40V 變化的條件’使用真空探針（BCT2 2MDC-5-HT-SCU ;長瀨電子儀器（Nagase Electronic Equipments Service)公司製）測定其電晶體特性。結果表示於表1。比較例係以閘極電壓Vg於〇至-60V變化，源極汲極間電麗Vsd於〇至-40V變化的條件，測定其電晶體特性。場效型有機薄膜電晶體的遲滞，係在源極汲極間電壓 Vsd為-4〇v，以使閘極電壓Vg從0V—-40V變化時的臨限值電壓Vthl與使閘極電壓Vg從-40V->0V變化時的臨限值電壓Vth2的電壓差異來表示。 [比較例1] (場致型有機薄膜電晶體的製造）除了使用聚乙烯酚（Aldrich製，Mn= 8000)取代高分子化合物1，且在形成閘極絕緣層時不進行UV光的照射以 53 323253 201223979 測定外，與實關Μ絲s 電晶體測性，進行評價。 ^曰曰體 [表1 ]The polymer compound 7 obtained from the polymer compound 7 has a weight average molecular weight of 40,000 from a standard polystyrene (GPC of Shimadzu, 1 set of "Tskgel super HM-H" + 1 "Tskgel super H2000", mobile phase = THF). The propylene glycol monoterpene ether acetate solution of the polymer compound 1 obtained in Synthesis Example 1. 00 g, Synthesis Example 2 The propylene glycol monomethyl ether acetate solution of the obtained polymer compound 2, 3.55 g, and argon argon, 7.00 g, were placed in a 30 ml sample bottle, and dissolved while stirring to prepare a material containing an organic thin film transistor insulating layer. Apply the solution evenly. The obtained coating solution was filtered through a membrane filter having a pore size of 0.2 / / m through 50 323253 201223979, and after being spin-coated on a glass substrate to which a chromium electrode was attached, it was dried on a heating plate at 100 c for 10 minutes. Then, using an aligning machine (aii egg (1) (Canon 1.521), uv light of _〇raj/cin2 (wavelength 36 (four), and then nitrogen gas] was burned for 2 〇 on the hot plate for 2 , minutes to obtain gate insulation. In the middle layer, the product is dissolved in a solution of trioxane as a solvent, a solution of 4% by weight (organic semiconductor composition), which is filtered by a separator to prepare a coating liquid. The coating is applied to the inter-electrode insulating layer by spin coating, and the active layer of the thickness of 6G (10) is used, and then activated by vacuum evaporation using a metal mask. A source film and a electrodeless electrode (having a laminated structure of molybdenum oxide and gold in this order from the active layer side) are formed on the layer to form a field film transistor. 2] Machine film transistor (manufactured by organic thin film transistor insulating layer material and field effect type) 0.23 g of a propylene glycol monomethyl acetate solution of the polymer compound i obtained in Synthesis Example 1, and a polymer obtained in Synthesis Example 3. Compound 3 propylene glycol monoterpene acetate vinegar solution G.61g, propylene glycol曱乙酸 acetic acid vinegar Q-shirt, polymer compound 4 obtained from Synthesis Example 4, propylene glycol monomethyl ether acetic acid brewing solution 0.073g, tetrahydrogen cough. 3g into a 1 liter sample vial, while scrambled - side Dissolve 'modulate a uniform coating solution containing the material of the film dielectric insulating layer. 323253 51 201223979 The resulting coating solution was filtered using a membrane filter having a pore size of 2.2em, and it was spin-coated on a chrome-plated electrode. After drying on a glass substrate, it was dried at 100 ° C for 10 minutes on a hot plate. Then, 6000 mJ/cm 2 of UV light (wavelength 365 nm) was irradiated using an alignment machine (manufactured by Canon; PLA-521), and then heated under nitrogen. On the plate, 22 (the TC was calcined for 30 minutes to obtain a gate insulating layer. Then, an active layer, a source electrode, and a gate electrode were formed in the same manner as in Example 1 to produce a field effect type organic thin film transistor. [Example 3] (Production of Organic Thin Film Oxide Insulation Layer Material and Field Effect Organic Thin Film Transistor) The same procedure as in Example 2 was carried out, except that the amount of the propylene glycol monoterpene ether acetate solution of the polymer compound 4 was changed to 0·147 g. Field effect type organic thin film transistor. Example 4] (Production of organic thin film transistor insulating layer material and field effect type organic thin film transistor) except that the amount of the polymer compound 4 propylene glycol monoterpene ether acetate solution was changed to 0·293 g 'and tetrahydrofuran was used. A field-effect type organic thin film transistor was produced in the same manner as in Example 2 except that the amount was changed to 5 g. [Example 5] (Production of organic thin film transistor insulating layer material and field effect type organic thin film transistor) Propylene glycol monomethyl ether acetate solution UOg of compound 6, propylene glycol monoterpene ether acetate solution of polymer compound 5 323253 201223979 2. 49g, propylene glycol monomethyl ether acetate 3. 00g placed in 30 ml sample The bottle was dissolved while stirring, and a uniform coating solution containing an organic thin film transistor insulating layer material was prepared. The obtained coating solution was subjected to spin coating on a glass substrate with a chrome electrode by using a membrane filter having a pore size of 0.2/μm, and then calcined at 22 (TC for 30 minutes on a hot plate in nitrogen). Then, an insulating layer was formed. Then, an active layer, a source electrode, and a gate electrode were formed in the same manner as in Example 1. A field effect type organic thin film transistor was produced. <Evaluation of transistor characteristics> The field effect type thus produced The organic thin film transistor is used to change the gate voltage Vg from 0 to -4 〇v, and the source-drain voltage vsd varies from 〇 to -40 V. Using a vacuum probe (BCT2 2MDC-5-HT- SCU; Nagase Electronic Equipments Service Co., Ltd.) The transistor characteristics were measured. The results are shown in Table 1. The comparison example was based on the gate voltage Vg varying from 〇 to -60 V, and the source bucks between the electrodes Vsd. The crystal characteristics of the field-effect organic thin film transistor are determined by the conditions of the change from 0 to 40 V. The voltage Vsd between the source and the drain is -4 〇 v, so that the gate voltage Vg is from 0 V - The threshold voltage Vthl at -40V change and the gate voltage Vg from -40V->0 [Comparative Example 1] (Production of Field-Forming Organic Thin Film Transistor) In addition to the use of polyvinylphenol (manufactured by Aldrich, Mn = 8000), the polymer compound 1 was replaced. And when the gate insulating layer is formed, the UV light is not irradiated and measured by 53 323253 201223979, and the measurement is performed with the actual tantalum wire s. ^曰曰 [Table 1]

【圖式簡單說明】第1圖係表示本發明的一實施態樣之底閘極頂接觸型有機薄膜電晶體的構造之剖面示意圖。第2圖係表示本發明的其他實施態樣之底閘極底接觸型有機薄膜電晶體的構造之剖面示意圖。【主要元件符號說明】 1 基板 2 閘極電極 3 閘極絕緣層 4 有機半導體層 5 源極電極 6 汲極電極 7 覆蓋層 323253 54BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the structure of a bottom gate contact type organic thin film transistor according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor according to another embodiment of the present invention. [Main component symbol description] 1 Substrate 2 Gate electrode 3 Gate insulating layer 4 Organic semiconductor layer 5 Source electrode 6 Dip electrode 7 Cover layer 323253 54

Claims

201223979 七、申請專利範圍： 1· 一種有機薄膜電晶體絕緣層材料，包含：高分子化合物（A) ’其含有式（丨）所示的重複單元，並在分子内含有2個以上的第1官能基，其中，該第t B月b基為藉由電磁波的照射或熱的作用而生成會與活性氫反應之第2官能基之官能基；、201223979 VII. Patent application scope: 1. An organic thin film transistor insulating layer material comprising: a polymer compound (A) which contains a repeating unit represented by the formula (丨) and contains two or more first molecules in the molecule. a functional group, wherein the t-th b-group is a functional group that generates a second functional group that reacts with active hydrogen by irradiation of electromagnetic waves or heat;

[式表示氫原子或曱基；Μ⑴為相同或相異，表示氫原子或碳數1至20❾一價有機基；該基中的氫原子可被氟料取代；Raa表示碳數丨至2〇的 :價有機基；該二價有機基中的氫原子可被氣原子取代，a表示〇至20的整數；Raa為複數相同亦可為相異] 寻]為以及 —化合物⑻，其係選自由分子内含有2個以上活性 =之低分子化合物及分子内含有2個以上活性氮之高 77子化合物所成群組中的至少1種。 2.如申請專利範圍第1項所述之有機薄膜電晶體絕緣層 323253 1 201223979 材料，其中，前述高分子化合物（A)復含有：具有藉由電磁波的照射或電子線的能量之吸收而引起二聚化反應之官能基的重複單元。 3. 如申請專利範圍第2項所述之有機薄膜電晶體絕緣層材料，其中，前述具有藉由電磁波的照射或電子線的能量之吸收而引起二聚化反應之官能基之重複單元，係選自由式（2)所示的重複單元以及式（3)所示的重複單元所成群組中之至少1種重複單元；[Formula represents a hydrogen atom or a fluorenyl group; Μ(1) is the same or different, and represents a hydrogen atom or a monovalent organic group having a carbon number of 1 to 20 Å; a hydrogen atom in the group may be substituted by a fluorine material; and Raa represents a carbon number of 丨 to 2〇; The valence organic group; the hydrogen atom in the divalent organic group may be substituted by a gas atom, a represents an integer from 〇 to 20; Raa is plural or the same as the complex] and the compound (8) is selected. The free molecule contains at least one of a group of two or more low molecular compounds having activity = and a high molecular 77 compound having two or more active nitrogens in the molecule. 2. The organic thin film transistor insulating layer 323253 1 201223979 according to claim 1, wherein the polymer compound (A) is contained in the polymer compound (A), which is caused by irradiation of electromagnetic waves or absorption of energy of electron beams. A repeating unit of a functional group of the dimerization reaction. 3. The organic thin film transistor insulating layer material according to claim 2, wherein the repeating unit having a functional group which causes dimerization reaction by irradiation of electromagnetic waves or energy absorption of electron beams is Selecting at least one repeating unit of the group of the repeating unit represented by the formula (2) and the repeating unit represented by the formula (3);

(2) [式中，R5表示氫原子或甲基；R表示氫原子或碳數1 至20的一價有機基；該一價有機基中的氫原子可被氟 I 原子取代；Rbb表示碳數1至20的二價有機基；該二價有機基中的氫原子可被氟原子取代；b表示0至20的整數；c表示1至5的整數；Rbb為複數個時，該等可為相同亦可為相異；R為複數個時，該等可為相同亦可為相異；X表示氯原子、漠原子或蛾原子] 2 323253 201223979(2) wherein R5 represents a hydrogen atom or a methyl group; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; a hydrogen atom in the monovalent organic group may be substituted by a fluorine I atom; Rbb represents a carbon a divalent organic group of 1 to 20; a hydrogen atom in the divalent organic group may be substituted by a fluorine atom; b represents an integer of 0 to 20; c represents an integer of 1 to 5; and when Rbb is plural, the The same or different; when R is plural, these may be the same or different; X represents a chlorine atom, a desert atom or a moth atom] 2 323253 201223979

(3) [式中，h表示氫原子或甲基；仏至R,3為相同或相異，表示氫原子或碳數1至2〇的一價有機基；該一價有機基中的氫原子可被氟原子取代；^。。表示碳數1至的二價有機基；該二價有機基中的氫原子可被氟原子取代；d表示0至20的整數；Ree為複數個時，該等可為相同亦可為相異]。如申吻專利範圍弟1項至第3項中任一項所述之有機薄膜電晶體絕緣層材料，其中，前述第丨官能基係選自被封阻劑（b 1 ock i ng agent)封阻之異氰酸基與被封阻劑封阻之異硫氰酸基所成群組中的至少1種基。 •如申明專利範圍第1項至第3項中任一項所述之有機薄膜電晶體絕緣層材料’其中，前述第1官能基為選自式 (4)所示的基以及式（5)所示的基所成群組中的至少j 種基； 323253 3 201223979(3) wherein h represents a hydrogen atom or a methyl group; 仏 to R, 3 are the same or different, and represent a hydrogen atom or a monovalent organic group having 1 to 2 carbon atoms; hydrogen in the monovalent organic group The atom can be replaced by a fluorine atom; . a divalent organic group having a carbon number of 1 to 2; a hydrogen atom in the divalent organic group may be substituted by a fluorine atom; d represents an integer of 0 to 20; and when Ree is plural, the same may be the same or different ]. The organic thin film transistor insulating layer material according to any one of the preceding claims, wherein the first fluorene functional group is selected from the group consisting of a blocking agent (b 1 ock i ng agent) At least one group of the blocked isocyanato group and the isothiocyanate group blocked by the blocking agent. The organic thin film transistor insulating layer material according to any one of claims 1 to 3, wherein the first functional group is selected from the group represented by the formula (4) and the formula (5) At least j bases in the group shown; 323253 3 201223979

^15 [式中， ⑷ [式中，X’表示氧原子或硫表示氫原子或碳數1至2〇^15 [wherein, (4) [wherein, X' represents an oxygen atom or sulfur represents a hydrogen atom or a carbon number of 1 to 2 〇

•成硫原子；Rh、R15為相同或相異至20的一價有機基] (5) [式令’'表7^原子或硫原子m18為相同或相異，表不氫原子或碳數1至20的-價有機基]。 6· 一種有機薄膜電晶體，具備：源極電極、汲極電極、間極電極、有機半導體層、以及使用申請專利範圍第1 項至第5項中任一項所述之有機薄膜電晶體絕緣層材料所形成之絕緣層。 7· ^申請專利範圍第6項所述之有機薄膜電晶體，其中，前述絕緣層為閘極絕緣層。 8. -種顯不器用構件，包含：申請專利範圍第6或7項所述之有機薄膜電晶體。用耩件。 9. 一種顯示器，包含：申請專利範圍第8項所述之顯示器 323253 4• a sulfur atom; Rh and R15 are the same or different to a monovalent organic group of 20] (5) [Formula] ' Table 7 ^ atom or sulfur atom m18 is the same or different, showing no hydrogen atom or carbon number 1 to 20-valent organic group]. An organic thin film transistor comprising: a source electrode, a drain electrode, an interpole electrode, an organic semiconductor layer, and the organic thin film transistor insulation according to any one of claims 1 to 5 An insulating layer formed of a layer of material. The organic thin film transistor according to claim 6, wherein the insulating layer is a gate insulating layer. 8. A component for display, comprising: an organic thin film transistor according to claim 6 or 7. User condition. 9. A display comprising: the display of claim 8 of claim 5 323253 4