201218462 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種應用於LED器件的LED支架的製造方 法及其產品，具體涉及用於製造表面貼裝型功率LED器件 支架的製造方法及其產品。 【先前技術】 半導體照明被譽為***照明光源，逐漸普及應用到 籲 通用照明領域。其中’功率發光二極體（功率LED )以高 亮度、高功率深受市場歡迎。傳統功率LED用的支架有兩 種..PLCC 型（plastic leaded chip carrier，塑封帶引線片式 載體）和陶瓷基板。 如附圖1所示為現有技術的PLCC型支架結構示意 圖。PLCC型支架是具有反射腔結構的塑膠外殼〇1包裹金 屬引線框架02’該金屬引線框架02帶有承載lEd芯片04 φ 的芯片安放部03與電極用的引腳05 ;該芯片安放部03與 正負電極之一成一體結構。由於PLCC型支架帶有反射腔、 且結構緊湊，特別適合應用於配光要求高、貼裝密度高的 領域。大功率LED存在工作時產生高熱能的問題，需要採 用技術手段將所產生的熱能很好的散發，否則會影響其壽 命和出光效果。因此大功率LED用的pLCC型支架的典型 封裝結構是：具有反射腔結構的塑膠外殼除了包裹金屬引 線框架外’還包裹置於led &片底部且露於支架之外的熱 沉，該熱沉的材料一般選用散熱效果良好的金屬材料，例 201218462 如銅，以利於散發LED工作時產生的高熱能，由於散熱效 果良好，PLCC型大功率LED是目前最常用的大功率led 封裝結構之一。 另一種傳統功率led用的支架是陶瓷基板，其典型封 裝結構如附圖2所示：承載led芯片的基板06與置於該 基板06上的反射腔07均採用陶瓷材料；對於大功率 器件情況，基板06的芯片安放處還具有至少一個的通孔 〇8,通孔〇8内填充導熱材料，增強散熱效果，滿足大功率 LED器件的散熱要求。由於陶瓷基板具有良好的絕緣性和 散熱性，所以該類基板廣泛應用在大功率LED領域與 PLCC型支架一併佔據整個大功率[ED市場。 儘管如此，PLCC型支架與陶瓷基板均存在一些缺點。 就PLCC型支架而言，其製造工藝複雜，精度要求高，已 經有很多相關的專利申請，其核心關鍵技術仍掌握在國外 止業手裏，且技術相對成熟，改進空間有限。特別是功率 LED用的PLCC型支架，還需要結合裝配熱沉進行散熱， 由於加入了熱沉，需要製備沉孔和裝配熱沉，所以其結構 更加複雜，導致支架封裝工藝更加繁瑣。同時，pLCC型的 大功率LED體積大，其封裝結構不能應用於迴流焊接工 藝’不適合全自動批量化的測試與編帶工藝，也不利於下 游產品的批量化焊接安裝，尤其不適用於後續的LED產品 製造的表面貼裝工藝。可見現有的pLCC型支架的結構複 雜，使得其製造工藝相對複雜，產品的加工成本也相對較 高，而且產品的後續加工工藝受限，增加了後續LED產品 201218462 的生產成本和降低了生產效率’並相應限制了 pLcc型支 架功率LED的應用範圍。 雖然陶瓷基板能克服PLCC型支架的主要缺點，但是 陶瓷基板的一個普遍問題是製造工藝難度大，成本高和材 質脆。這也是目前限制陶瓷基板不能完全取代pLcc型支 架的關鍵因素。201218462 VI. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing an LED holder for an LED device and a product thereof, and more particularly to a method for manufacturing a surface mount type power LED device holder and a product thereof . [Prior Art] Semiconductor lighting has been hailed as the fourth-generation lighting source, and it has been widely used in the field of general lighting. Among them, the power-emitting diode (power LED) is well received by the market with high brightness and high power. There are two types of brackets for conventional power LEDs: a plastic leaded chip carrier (PCB) and a ceramic substrate. Fig. 1 is a schematic view showing the structure of a prior art PLCC type bracket. The PLCC type bracket is a plastic outer casing having a reflecting cavity structure. The metal lead frame 02 is wrapped with a chip mounting portion 03 carrying the lEd chip 04 φ and a lead 05 for the electrode; the chip mounting portion 03 and One of the positive and negative electrodes is integrated. Due to its reflective cavity and compact structure, the PLCC bracket is especially suitable for applications with high light distribution requirements and high mounting density. High-power LEDs have the problem of generating high thermal energy when working. It is necessary to use technical means to dissipate the generated heat energy well, otherwise it will affect its life and light output. Therefore, the typical package structure of the pLCC type bracket for high-power LEDs is: a plastic case having a reflective cavity structure, in addition to wrapping the metal lead frame, also wraps a heat sink placed on the bottom of the led & The sinking material is generally selected from metal materials with good heat dissipation effect, such as 201218462, such as copper, to facilitate the high thermal energy generated when the LED is working. Due to the good heat dissipation effect, PLCC type high power LED is one of the most commonly used high power LED package structures. . Another conventional power LED bracket is a ceramic substrate, and its typical package structure is as shown in FIG. 2: the substrate 06 carrying the LED chip and the reflective cavity 07 placed on the substrate 06 are made of ceramic material; for the case of high power devices The chip mounting portion of the substrate 06 further has at least one through hole 〇8, and the through hole 〇8 is filled with a heat conductive material to enhance the heat dissipation effect and meet the heat dissipation requirement of the high power LED device. Due to the good insulation and heat dissipation of ceramic substrates, such substrates are widely used in the field of high-power LEDs and PLCC-type brackets to occupy the entire high-power [ED market. Despite this, both PLCC type holders and ceramic substrates have some disadvantages. As far as the PLCC type bracket is concerned, its manufacturing process is complicated and its precision requirements are high. There have been many related patent applications, and its core key technologies are still in the hands of foreign industry, and the technology is relatively mature and the space for improvement is limited. In particular, the PLCC type bracket for power LEDs needs to be combined with the heat sink for heat dissipation. Since the heat sink is added, the countersink and the assembly heat sink need to be prepared, so the structure is more complicated, which leads to more complicated bracket packaging process. At the same time, the pLCC type high-power LED is large in size, and its package structure cannot be applied to the reflow soldering process 'not suitable for fully automated batch testing and braiding process, and is not conducive to batch soldering installation of downstream products, especially for subsequent Surface mount technology for LED product manufacturing. It can be seen that the structure of the existing pLCC type bracket is complicated, the manufacturing process thereof is relatively complicated, the processing cost of the product is relatively high, and the subsequent processing technology of the product is limited, which increases the production cost of the subsequent LED product 201218462 and reduces the production efficiency. And correspondingly limit the application range of pLcc type bracket power LED. Although the ceramic substrate can overcome the main disadvantages of the PLCC type bracket, a common problem with the ceramic substrate is that the manufacturing process is difficult, costly, and brittle. This is also a key factor in limiting the inability of ceramic substrates to completely replace the pLcc type of support.
綜上所述，需要尋找一種製造工藝簡單、產品出光和 散熱效果良好、加工成本較低的LED支架結構及其製造工 藝，與前述陶曼基板和PLCC型支架相比，可以克服上述 現有PLCC型支架和陶究基板的技術缺點。現有的技術改 進t，本領域技術人員已經在製造材料、製作工藝方面進 仃了嘗試，但都沒有很好的解決和克服上述技術缺陷。 在本發明作出之前，本申請人曾提出了申請號為 010165442.3、名稱為“ 一種表面貼裝型功率支架製 造方法及其產品國發明專利的技術方案，提出一種採 用單面覆銅線路板和金屬片製成的表面貼裝型功率LED支 架的製k方法和支架產&，具有製造方法簡單、成本低、 散熱效果好的優點，能夠克服功率led常有的PLCC型支 架和陶究基板的缺點，g 士 、.占具有佔領功率LED支架市場的潛 力。然而’在進一步的研究中也發現，由於單面覆銅線路 板與金屬片之間僅是通㈣合膠片連接，在單面覆銅線路 板的通孔底部邊緣與金屬片之間可能出現空隙所以會引 起不易通過如‘‘紅Μ此，，每1t, 、堡水4可靠性試驗，導致該功率led支 架的可靠性存在—定的問題。而1，由於通孔底部與金屬In summary, it is necessary to find an LED bracket structure with a simple manufacturing process, good product light-emitting and heat-dissipating effect, and low processing cost, and a manufacturing process thereof, which can overcome the above-mentioned existing PLCC type compared with the aforementioned Tauman substrate and PLCC-type bracket. Technical disadvantages of brackets and ceramic substrates. The prior art has improved t, and those skilled in the art have made attempts in manufacturing materials and manufacturing processes, but have not solved and overcome the above technical defects. Prior to the present invention, the applicant has proposed a technical solution of the invention patent No. 010165442.3 entitled "Surface Mount Type Power Bracket Manufacturing Method and Product Country", and proposes a single-sided copper clad circuit board and metal. The method for manufacturing the surface mount type power LED bracket and the bracket production & have the advantages of simple manufacturing method, low cost and good heat dissipation effect, and can overcome the PLCC type bracket and the ceramic substrate which are common in power led. Disadvantages, gshi,. has the potential to occupy the power LED bracket market. However, in further research, it was found that since the single-sided copper-clad circuit board and the metal piece are only connected by the (four) film, the single-sided cover There may be gaps between the bottom edge of the through hole of the copper circuit board and the metal piece, so it will not be easy to pass through, such as ''red Μ, this, every 1t, and the water 4 reliability test, resulting in the reliability of the power led bracket exists - Fixed problem. And 1, due to the bottom of the hole and the metal
C 201218462 片不是緻密連接，形成芯片安放處底部不連續平滑，所以 會引起LED芯片的反光率降低。 本發明是針對上述技術缺陷，提出可以解決上述技術 問題的技術新方案。本發明提供一種能夠克服本領域技術 人員普遍認為的普通絕緣板如PCB板不適於作為功率led 的封裝材料的技術偏見，同時解決使用單面覆銅線路板為 基板的情況下在通孔底部邊緣與金屬片可能出現空隙的問 題，提出一種工藝簡單、成本低廉、具有高可靠性、應用 範圍廣、高散熱性和高反光率的功率LED支架製造方法及 其產品。 【發明内容】 與現有技術的陶瓷基板和PLCC型支架相比，普通絕 緣板，如PCB板，其擁有價格低廉、對於板的加工工藝相 對成熟的優勢’即具有成本低、易於加工的優點。然而， 由於普通絕緣板存在散熱效果差、財熱性差的缺點，一方 面本領域技術人員普遍認為其不適合功率型led器件的高 散熱性的要求’只能用於小功率的LED器件，故通用性較 差；另一方面，由於其耐熱性差，在LED封裝固晶工藝中 還容易出現分層和變形等問題，成品率較低，本領域技術 人員普遍認為普通絕緣板不適於作為功率LED的封裝材 料。 本發明克服上述技術偏見，採用雙面覆金屬層的普通 絕緣板板作為製造功率LED支架的基板，在已經作出的以 201218462 單面覆銅線路板為支架基板並粘接金屬片的技術方案的基 礎上’針對還存在的技術缺陷而進行的進一步技術創新與 改進’本發明使用普通絕緣板為基板，在其雙面覆有金屬 層構成雙面覆金屬層線路板，作為製造表面貼裝型功率 led支架的基板，通過傳統普通絕緣板加工工藝和對於支 架結構的創新特殊設計，實現提供一種表面貼裝型功率 led支架方法及其產品的目的。 根據本發明的方法技術方案，提供一種表面貼裝功率 型LED支架製造方法，具體步驟如下： Ο準備雙面覆金屬層線路板··所述線路板以普通絕緣 板為基板’在所述基板上表面覆蓋金屬層一，在所述基板 下表面覆蓋有金屬層二’構成所述雙面覆有金屬層的線路 板； 2)形成孔·採用機械工藝、鐳射工藝或腐触工藝，在 所述線路板上形成至少一個孔； 3 )設置孔壁金屬層：採用電鍍工藝、沉積工藝或絲網 印刷工藝，在所述孔内壁上設置金屬層； 4) 增加金屬層厚度：通過熔合工藝、沉積工藝或電鍍 工藝增加所述線路板下表面的金屬層厚度，在所述金屬層 —上增加與之成一體結構的金屬層三構成厚金屬層，使孔 底部的金屬層達到能夠承載LED芯片的厚度； 5) 金屬層姓刻：採用蝕刻工藝處理線路板上的金屬 層，在所述線路板上表面形成線路層一，在所述線路板下 表面形成線路層二，所述線路層一、線路層二與所述孔構 201218462 成功率LED支架結構。 6)分離功率LED去牟罝；.4« m 叉永皁7L .採用切割工藝加工上述 步驟形成的功率LED支架妹槿，八舱山加 七 又示、活稱分離出獨立的功率LED支 架單元。 本發明還提供-種根據上述表面貼裝功率型led支架 製造方法製造的產品的技術方案。根據本發明的表面貼裝 型功率LED支架的技術方案，其結構包括：一雙面覆金屬 層線路板為支架基板，所述支架基板上具有孔以及支架線 路層，組成所述功率LED支架；所述支架基板是由金屬層 一、金屬層二和置於所述兩金屬層之間的絕緣基板組成； 所述線路層包括纟基板上表面的線路層一和在基板下表面 的線路層二；所述線路層一是由對應孔周圍、用於焊接金 屬線的引線連接部以及對應所述孔兩側的正負電極層一組 成’所述引線連接部分別電性連接正負電極層一；在所述 支架基板底部具有厚金屬層，所述線路層二是由對應所述 孔底部的厚金屬層作為芯片安放部和對應所述芯片安放部 並與其電性絕緣的正負電極層二組成；所述正負電極層 一、正負電極層二電性連接組成支架電極；所述孔内壁設 有金屬層。 本發明是不同於現有技術的結構的支架及其製造方 法，本發明的技術方案在製造工藝和產品結構上進行了創 新。一方面’本發明克服現有技術的偏見，採用在普通絕 緣板上雙面覆金屬層作為製造支架的雙面覆金屬層線路 板’通過本發明的技術方案的工藝和結構的創新設計，採 201218462 用普通絕緣板加工工藝與其他LED支架製造的傳統工藝， 使用雙面覆金屬層線路板製造出表面貼裝型功率led支 架，一方面工藝簡單，生產效率高，產品可靠性好大大 降低了生產成本；另一方面，通過本發明對於支架結構的 創新設計，使得用普通絕緣板製造的LED支架能夠滿足功 率LED的高耐熱要求，由於本發明的支架結構將芯片 直接與導熱良好的、構成芯片安放部的一體結構厚金屬層 接觸，讓LED芯片工作時釋放的熱量能夠直接通過厚金屬 •層釋放至外界，所以該LED支架具有良好的散熱效果和高 的可靠性，並且具有良好的出光效果，通過試驗證明該 雙面覆金屬層普通絕緣板製造的LED支架具有優良的耐熱 性能，在LED封裝的銀漿固晶中不會出現分層和裂解等問 題。 綜上所述，本發明的方法克服了本領域技術人員普遍 認為普通絕緣板不能夠用於製造功率LED支架的技術偏 φ 見，巧妙地將普通絕緣板應用於LED支架的製造，極大的 簡化了現有的功率LED支架的製造工藝，提高了生產效 率、降低了生產成本’本發明的方法製造的產品成本低廉， 可靠性好’散熱和出光效果好，能應用於迴流焊接工藝， 適合全自動批量化的測試與編帶工藝，有利於下游產品的 批量化焊接安裝’尤其適用於後續的LED產品製造的表面 貼裝工藝’具有更為廣闊的應用範圍。可見，本發明是克 服了技術偏見的發明創造’本發明的方法和產品相對於現 有技術具有顯著的進步，取得了十分突出的、積極的技術 201218462 效果。 【實施方式】 圖1所示的是一個現有技術的PLCC型支架，具有反 射腔結構的塑膠外殼〇1包裹金屬引線框架02，該金屬引 線框架02帶有承載LED芯片04的芯片安放部〇3與電極 用的引腳05。 圖2所示的是一個現有技術的陶瓷基板，承載LED芯 片的基板06與置於該基板06上的反射腔07均採用_=光# 料。 實施例一 根據圖3和圖4所示，為本發明提供的一種功率LED 支架製造方法的實施例一。 如圖3給出了本實施例的工藝流程圖，結合圖4給出 的工藝步驟示意圖，對本實施例的具體製造步驟說明如下。 步驟S11)準備雙面覆金屬層線路板： 準備一雙面覆金屬層的線路基板1，如圖4A所示，包 括普通絕緣基板1〇、覆蓋所述基板上表面的金屬層一 η， 以及覆蓋所述基板1〇下表面的金屬層二12。基板1〇的材 質沒有特殊要求，為普通絕緣板，如PCB板，優選的是， 可採用價格便宜的玻璃纖維布基板、CEM-3 ( 3級複合環氧 材料’英文 Composit Epoxy Material Grade-3 )基板、CEM-1 (1級複合環氧材料，英文C〇nip〇sit Epoxy Material 201218462C 201218462 The film is not densely connected, and the bottom of the chip placement is not continuous and smooth, so it will cause the LED chip's light reflectivity to decrease. The present invention is directed to the above technical drawbacks, and proposes a new technical solution that can solve the above technical problems. The present invention provides a technical prejudice that overcomes the conventional insulating board such as a PCB board which is generally considered to be unsuitable as a power LED package material, and solves the problem of using a single-sided copper clad circuit board as a substrate at the bottom edge of the through hole. A problem of the possibility of voids in the metal sheet is proposed, and a method and a product for manufacturing the power LED bracket with simple process, low cost, high reliability, wide application range, high heat dissipation and high light reflectivity are proposed. SUMMARY OF THE INVENTION Compared with prior art ceramic substrates and PLCC type brackets, conventional insulating boards, such as PCB boards, have the advantages of low cost and relatively mature processing technology for the board, which has the advantages of low cost and easy processing. However, since the ordinary insulating board has the disadvantages of poor heat dissipation effect and poor heat accounting, on the one hand, those skilled in the art generally believe that it is not suitable for the high heat dissipation requirement of the power type LED device, and can only be used for low power LED devices, so On the other hand, due to its poor heat resistance, problems such as delamination and deformation are prone to occur in the LED package die-bonding process, and the yield is low. It is generally recognized by those skilled in the art that ordinary insulating plates are not suitable as packages for power LEDs. material. The invention overcomes the above technical prejudice, and adopts a common insulating plate plate with double-sided metal-clad layer as a substrate for manufacturing a power LED bracket, and has adopted a technical proposal of using a 201218462 single-sided copper-clad circuit board as a support substrate and bonding metal sheets. Based on the 'further technical innovations and improvements made to the technical defects that still exist', the present invention uses a common insulating plate as a substrate, and a double-sided metal-clad circuit board is formed on both sides thereof with a metal layer as a surface mount type. The substrate of the power led bracket realizes the purpose of providing a surface mount type power led bracket method and a product thereof through a conventional ordinary insulating board processing technology and an innovative special design for the bracket structure. According to the technical solution of the method of the present invention, a method for manufacturing a surface mount power type LED bracket is provided, and the specific steps are as follows: Ο preparing a double-sided metal-clad circuit board, the circuit board is a common insulating board as a substrate The upper surface is covered with a metal layer, and the lower surface of the substrate is covered with a metal layer ii to form the double-sided metal layer-coated circuit board; 2) the hole is formed by a mechanical process, a laser process or a rot-touch process. Forming at least one hole on the circuit board; 3) providing a metal layer of the hole wall: using a plating process, a deposition process or a screen printing process, providing a metal layer on the inner wall of the hole; 4) increasing the thickness of the metal layer: by a fusion process, The deposition process or the electroplating process increases the thickness of the metal layer on the lower surface of the circuit board, and the metal layer 3 integrated with the metal layer is formed on the metal layer to form a thick metal layer, so that the metal layer at the bottom of the hole can carry the LED chip. The thickness of the metal layer is: the metal layer on the circuit board is processed by an etching process, and a circuit layer 1 is formed on the surface of the circuit board, in the line The underlying surface of the board forms a circuit layer 2, the circuit layer 1, the circuit layer 2 and the hole structure 201218462 success rate LED bracket structure. 6) Separate power LED to remove 牟罝;.4« m Fork soap 7L. The power LED bracket formed by the above process is processed by cutting process, and the eight-chamber mountain plus seven shows and separates the independent power LED bracket unit. . The present invention also provides a technical solution for a product manufactured according to the above-described surface mount power type led stent manufacturing method. The technical solution of the surface mount type power LED bracket according to the present invention comprises: a double-sided metal-clad circuit board as a support substrate, the support substrate having a hole and a support circuit layer to form the power LED support; The support substrate is composed of a metal layer, a metal layer 2 and an insulating substrate disposed between the two metal layers; the circuit layer includes a circuit layer 1 on the upper surface of the substrate and a circuit layer 2 on the lower surface of the substrate The circuit layer 1 is composed of a lead connection portion for soldering a metal line around the corresponding hole and a positive and negative electrode layer corresponding to both sides of the hole. The lead connection portion is electrically connected to the positive and negative electrode layers respectively; The bottom of the support substrate has a thick metal layer, and the circuit layer 2 is composed of a thick metal layer corresponding to the bottom of the hole as a chip mounting portion and a positive and negative electrode layer corresponding to the chip mounting portion and electrically insulated therefrom; The positive and negative electrode layers 1. The positive and negative electrode layers are electrically connected to form a support electrode; the inner wall of the hole is provided with a metal layer. The present invention is a stent different from the prior art structure and a method of manufacturing the same, and the technical solution of the present invention is innovative in the manufacturing process and product structure. On the one hand, the present invention overcomes the prejudice of the prior art, and adopts a double-sided metal-clad circuit board which is a double-sided metal-clad layer on a common insulating plate as a manufacturing bracket. The innovative design of the process and structure of the technical solution of the present invention is adopted 201218462 Using the conventional insulating plate processing technology and the traditional process of manufacturing other LED brackets, the surface mount type power led bracket is fabricated by using the double-sided metal-clad circuit board. On the one hand, the process is simple, the production efficiency is high, and the product reliability is greatly reduced. On the other hand, through the innovative design of the bracket structure of the present invention, the LED bracket manufactured by the common insulating board can meet the high heat resistance requirement of the power LED, and the bracket structure of the invention directly forms the chip with the heat conduction well. The integrated structure of the mounting part is in contact with the thick metal layer, so that the heat released by the LED chip can be directly released to the outside through the thick metal layer, so the LED bracket has good heat dissipation effect and high reliability, and has good light-emitting effect. Through the test, the double-sided metal-clad layer is made of ordinary insulating board. LED holder having excellent heat resistance, delamination and cracking, etc. without problems in die bonding paste in the LED package. In summary, the method of the present invention overcomes the technical bias that the ordinary insulating board can not be used for manufacturing a power LED bracket, and skillfully applies the ordinary insulating board to the manufacture of the LED bracket, which greatly simplifies. The manufacturing process of the existing power LED bracket improves the production efficiency and reduces the production cost. The method manufactured by the method of the invention has the advantages of low cost, good reliability, good heat dissipation and light extraction effect, can be applied to the reflow soldering process, and is suitable for automatic operation. The batch testing and braiding process is beneficial to the batch soldering installation of downstream products. It is especially suitable for the surface mount process of subsequent LED product manufacturing. It has a wider application range. It can be seen that the present invention is an invention that overcomes technical bias. The method and product of the present invention have made significant progress over the prior art, and have achieved a very prominent and positive technology 201218462 effect. [Embodiment] FIG. 1 shows a prior art PLCC type bracket, and a plastic case 〇1 having a reflective cavity structure encloses a metal lead frame 02 with a chip mounting portion 承载3 carrying an LED chip 04. Pin 05 for the electrode. Figure 2 shows a prior art ceramic substrate in which the substrate 06 carrying the LED chip and the reflective cavity 07 placed on the substrate 06 are both _= light materials. Embodiment 1 According to FIG. 3 and FIG. 4, a first embodiment of a method for manufacturing a power LED bracket according to the present invention is provided. The process flow chart of this embodiment is shown in FIG. 3, and the specific manufacturing steps of the present embodiment are described below in conjunction with the process steps shown in FIG. Step S11) preparing a double-sided metal-clad circuit board: preparing a double-sided metal-clad circuit substrate 1, as shown in FIG. 4A, comprising a common insulating substrate 1 〇, a metal layer η covering the upper surface of the substrate, and A metal layer 12 covering the lower surface of the substrate 1 is covered. There is no special requirement for the material of the substrate 1 ,. For ordinary insulating boards, such as PCB boards, it is preferable to use an inexpensive glass fiber cloth substrate, CEM-3 (3 grade composite epoxy material 'English Composite Epoxy Material Grade-3 ) Substrate, CEM-1 (Class 1 composite epoxy material, English C〇nip〇sit Epoxy Material 201218462
Grade_l)基板，也可優選採用雙馬來醯亞胺樹脂（BT)基 板以及類似的基材；所覆金屬層優選的是銅層。 步驟S12)形成盲孔： 採用機械工藝、鐳射工藝或腐蝕工藝，在所述雙面覆 金屬層線路板上形成至少一個盲孔13;所述盲孔13底部 是金屬層二，即保留金屬層二（如圖4B所示），優選的是， 可以將盲孔設置為Μ行χΝ列的盲孔陣列，以形成具有M 行xN列的盲扎13陣列的支架基板結構（圖2中未示出）。 另一個優選方案是，在此步驟中還可以同時在對應所述盲 孔的兩側各形成至少一個電極小盲孔141，以構成電極的 一部分（如圖4所示）。 步驟S13)設置孔壁金屬層： 採用電鍍法、沉積法或絲網印刷法工藝，在所述盲孔 13内壁設置金屬反射層131。優選的是所述金屬反射層 是銅層或銀層，可以增加led器件的出光效果。在具有電 極小盲孔141的優選方案中，還在此步驟中，在所述電極 小盲孔141内壁設置電極導電層142 (如圖4c所示），以 構成正負電極的-部分’優選的是所述電極導電層可為銅 層或者銀層，以提高電極的導電性能。 步驟S14)形成厚金屬層： 採用熱熔工藝、電鍍工藝或沉積工藝在雙面覆金屬層 的線路基板丨的金屬層二12上增加與之成一體結= 層三，進一步增加金屬層厚度，形成厚金屬層15 (如圖4D 所示）。優選的是所述金屬層三是銅層。優選的方案之一 201218462 是，採用電鍍工藝或沉積工藝在金屬層二12生成一層金屬 三’所述金屬三與金屬層二12構成厚金屬層15,所述厚 金屬層15的厚度達到能夠承載LED芯片的厚度。另一個 優選的方案是，首先在雙面覆金屬層線路板1的下表面， 將一金屬箔14同雙面覆金屬層線路板1疊合併層壓枯貼， 使金屬箔14物理連接在所述線路板底部的金屬層二12上 (圖4中未示出），然後採用熱熔工藝、電鍍工藝或沉積工 藝使所述線路板底部的金屬層12與所述金屬箔14形成缴 密連接，成一體結構，形成厚金屬層15。在此方案中，優 選的是將粘合膠片置於所述金屬箔14與線路板底部之 間’然後高溫加熱至所述粘合膠片溶解成具有粘貼性的狀 態，壓合所述金屬箔14使其與所述線路板底部物理粘貼在 一起，形成參見圖4E、4F所示的假連接，然後採用熱熔工 藝、電鍍工藝或沉積工藝使所述線路板底部的金屬層12與 所述金屬箔14形成緻密連接，成一體結構，形成厚金屬層 15 ° 步驟S15)蝕刻： 採用蝕刻工藝在金屬層一上形成線路層一 16、在厚金 屬層15上形成線路層二17;所述線路層一 16包括引線連 接部161和正負電極層一 162,其中，形成的所述引線連 接部161與所述正負電極層一 162分別電性連接；形成的 所述線路層二17包括芯片安放部171和與之相互電性絕緣 的正負電極層二172，其中芯片安放部171是所述盲孔13 的底部，用以承載LED芯片。在具有電極小盲孔141的優 12 201218462 選方案中’還形成所述小盲孔141内壁的導電金屬層I#] 與正負電極層一 162、正負電極層二172電性連接構成正 負電極（如圖4E所示）。形成的所述線路層一、線路層一 與所述盲孔構成功率LED支架結構。 步驟S16)分離出功率LED支架單元： 採用切割工藝加工經過上述步驟形成的功率led支架 結構’分離出獨立的功率LED支架單元。 此外，還在上述步驟中具有一些非必須的可選步驟， 具體如下。 在實施步驟S14)前，還可以有一蝕刻步驟SUb)，採 用蝕刻工藝去掉線路板下表面的大部分金屬層二，保留至 少圍繞所述孔底部的金屬層，作為後續工藝中線路層二的 基礎。此步驟不是必須步驟，可以省去。 在實施步驟15)後’還可以有一電鍍線路層步驟 S15a)，通過電鍍工藝在所述線路層一 16、線路層二17、 • 盲孔13底部的金屬箔上表面、吉丨 衣囬頁孔側壁的金屬層上再電鍍 形成一層金屬層，如銀層、金屉、姐 π τ增錫層#類似的金屬層， 以增加支架的光亮度和可捏,14。β 又邗j垾性。此步驟不是必須步驟，可 以省去。 在貫施梦鄉15)後，還可以有一安裝杯罩板步驟 S15a’）：本步驟為非必須的可選步驟，由下述分步驟组成 子步驟。準備-基板’基板的材質沒有特殊要求，為 通絕緣板，如PCB板，優選的是，可採用價格便宜的玻 纖維布基板、CEM.3 (3級複合環氧材料英文c〇〒 13 201218462The Grade_l) substrate may also preferably be a bismaleimide resin (BT) substrate and the like; the metal layer is preferably a copper layer. Step S12) forming a blind hole: forming at least one blind hole 13 on the double-sided metal-clad circuit board by a mechanical process, a laser process or an etching process; the bottom of the blind hole 13 is a metal layer 2, that is, a metal layer is retained Second, as shown in FIG. 4B, it is preferable that the blind holes can be arranged as a blind hole array of the chopping array to form a scaffold substrate structure having a blind row 13 array of M rows and xN columns (not shown in FIG. 2) Out). Another preferred solution is that at least one small electrode blind hole 141 can be formed on both sides of the corresponding blind hole at the same time to form a part of the electrode (as shown in Fig. 4). Step S13) Providing a hole wall metal layer: A metal reflection layer 131 is provided on the inner wall of the blind hole 13 by an electroplating method, a deposition method or a screen printing method. Preferably, the metal reflective layer is a copper layer or a silver layer, which can increase the light-emitting effect of the LED device. In a preferred embodiment having the electrode small blind hole 141, in this step, an electrode conductive layer 142 (shown in FIG. 4c) is disposed on the inner wall of the electrode small blind hole 141 to constitute a portion of the positive and negative electrode. The conductive layer of the electrode may be a copper layer or a silver layer to improve the electrical conductivity of the electrode. Step S14) forming a thick metal layer: using a hot-melt process, an electroplating process, or a deposition process to add a monolithic layer on the metal layer 2 of the double-sided metal-clad circuit substrate = = layer 3, further increasing the thickness of the metal layer, A thick metal layer 15 is formed (as shown in Fig. 4D). Preferably, the metal layer three is a copper layer. One of the preferred solutions 201218462 is to form a layer of metal in the metal layer 222 by an electroplating process or a deposition process. The metal three and the metal layer 12 form a thick metal layer 15, and the thickness of the thick metal layer 15 can be carried. The thickness of the LED chip. Another preferred solution is to first laminate and laminate a metal foil 14 on the lower surface of the double-sided metal-clad circuit board 1 with the double-sided metal-clad circuit board 1 so that the metal foil 14 is physically connected. The metal layer 12 on the bottom of the circuit board (not shown in FIG. 4) is then formed into a dense connection with the metal foil 14 at the bottom of the circuit board by a hot melt process, an electroplating process or a deposition process. In a unitary structure, a thick metal layer 15 is formed. In this aspect, it is preferred that the adhesive film is placed between the metal foil 14 and the bottom of the wiring board' and then heated at a high temperature until the adhesive film is dissolved to have a sticking property, and the metal foil 14 is pressed. Laying it together with the bottom of the circuit board to form a dummy connection as shown in FIGS. 4E, 4F, and then using a hot melt process, an electroplating process or a deposition process to make the metal layer 12 at the bottom of the circuit board and the metal The foil 14 is formed into a dense joint and formed into a unitary structure to form a thick metal layer 15°. Step S15) etching: forming a circuit layer 16 on the metal layer 1 by an etching process, and forming a circuit layer 2 17 on the thick metal layer 15; The layer 16 includes a lead connecting portion 161 and a positive and negative electrode layer 162, wherein the formed lead connecting portion 161 is electrically connected to the positive and negative electrode layers 162, respectively; the formed circuit layer 2 17 includes a chip mounting portion. And a positive and negative electrode layer 172 electrically insulated from each other, wherein the chip mounting portion 171 is a bottom portion of the blind hole 13 for carrying the LED chip. In the preferred embodiment of 201212462 having the electrode small blind hole 141, the conductive metal layer I# which forms the inner wall of the small blind hole 141 is electrically connected to the positive and negative electrode layer 162 and the positive and negative electrode layer 172 to form a positive and negative electrode. As shown in Figure 4E). The formed circuit layer 1, the circuit layer one and the blind hole constitute a power LED bracket structure. Step S16) Separating the power LED bracket unit: The power LED bracket structure formed by the above steps is processed by a cutting process to separate the independent power LED bracket unit. In addition, there are some optional optional steps in the above steps, as follows. Before performing step S14), there may be an etching step SUb), removing most of the metal layer 2 on the lower surface of the circuit board by an etching process, and retaining at least a metal layer surrounding the bottom of the hole, as a basis for the circuit layer 2 in the subsequent process. . This step is not a necessary step and can be omitted. After performing step 15), 'there may also be a plating circuit layer step S15a), through the electroplating process on the circuit layer 16, the circuit layer 2, the upper surface of the metal foil at the bottom of the blind hole 13, and the back surface of the metal plate. The metal layer of the sidewall is further electroplated to form a metal layer, such as a silver layer, a gold drawer, a metal layer similar to the πτ tin-added layer #, to increase the brightness and pinch of the stent. β is also 垾j垾. This step is not a required step and can be omitted. After the implementation of the dream 15), there may be a step of installing the cup cover step S15a'): this step is an optional step which is optional and consists of the following substeps. There is no special requirement for the material of the substrate-substrate. For the insulating board, such as a PCB board, it is preferable to use an inexpensive glass fiber cloth substrate, CEM.3 (3 grade composite epoxy material English c〇〒 13 201218462
Epoxy Material Grade-3 )、CEM-1 ( 1 級複合環氧材料，英 文 Composit Epoxy Material Grade-1 )、FR-1 ( 1 級阻燃紙 基板’英文 flame resistant laminates Grade-1 )、FR-2 ( 2 級阻燃紙基板，英文 flame resistant laminates Grade-2 )， 也可優選採用雙馬來醯亞胺樹脂基板（BT )，以及類似的基 材；子步驟2)通過機械、鐳射工藝或者腐蝕工藝，在所 述基板上形成與步驟S12)所述盲孔的位置、數量對應的 杯孔，形成杯罩板，優選的是，所述杯孔為反射杯狀或圓 柱狀，子步驟3)在所述杯罩板上表面塗覆黑色材料，增 加器件的對比度；子步驟4)將所述杯罩板粘貼在步驟si5) 或者步驟SI 5a)後形成的線路板上表面，其中所述杯體口 徑大於盲孔的口徑，遮蔽除引線連接部外的整個線路層 一。其中，子步驟3)為可選步驟，該子步驟可以省去； 子步驟4)的-優選實施方案是：A)將枯合膠片置於所述 杯罩板與線路板上表面之間；B)高溫加熱，所述枯合膠片 溶解成具㈣貼性的狀態，$而㈣所線路板上表面與杯 罩板。 由於上述步驟S15a)、步驟S15a·)為非必要步驟，在 其他實施方案中可以省去此兩個步驟或其中之一。 上述工藝採用的是普通絕緣板的加工工藝，工藝簡 單’成品率高，相對於現有技術很大程度提高生產效率， 降低了加工成本。 對於上述步驟形成的功率㈣支架單元，屬於表 裝型支架’可代替現存大功率LED用的pLCC型支架和陶 201218462 瓷基板支架；對於包括步驟S15a，）形成的功率副支架 單元，可代替現有傳統的頂部出光LED支架，特別適合應 用於顯示幕用的頂部出光LED器件。 在本實施例中，採用的工藝十分簡單，在雙面覆金屬 層線路板！上形成盲孔金屬導電層131，及直接在線路板 的金屬層二上形成金屬層三或者枯貼金屬荡後形成敏密連 接而構成-體結構的厚金屬層，該工藝解決了孔底部邊緣 鲁與金屬片之間可能出現空隙的問題和由此所引起的不易通 過如紅墨水等可靠性試驗的問題，提高了功率[印支架 的可靠性，同時，由於本實施例的工藝，盲孔底部構成一 體結構的厚金屬層，使盲孔底部光滑連接，提高了 lEE>產 品的出光率。 實施例二 根據圖5和圖6所示，為本發明提供的一種功率led • 支架製造方法的實施例二。 如蘭5給出了本實施例的工藝流程圖，結合圖6所示 工藝步鱗不意圖，對本實施例的具體製造步驟說明如下。 步鱗S21)準備雙面覆金屬層線路板： 準備—雙面覆金屬層的線路基板2，包括普通絕緣基 板20、覆蓋所述基板上表面的金屬層一 21，以及覆蓋所述 基板下表面的金屬層二22;基板20的材質沒有特殊要求， 為普通絕緣板，如PCB板，優選的是，可採用價格便宜的 玻璃纖雉布基板（FR-4)、CEM-3 (3級複合環氧材料，英 15 201218462 文 Composit Epoxy Material Grade-3 )、CEM-l ( 1 級複合環 氧材料，英文 Composit Epoxy Material Grade-1 )，還可以 優選雙馬來醯亞胺樹脂（BT)以及類似材質的基材為基板； 優選的是，金屬層為銅層。（如圖6A所示） 步驟S22)形成通孔： 採用機械工藝、鐳射工藝或腐触工藝，在所述雙面覆 金屬層線路板2上形成至少一個通孔23(如圖6B所示）； 優選的一個方案是，可以將通孔設置為Μ行χΝ列的通孔 陣列，以形成Μ行χΝ列的通孔23陣列的支架基板（圖6 沒示出）；另一個優選的方案是，在該步驟中還可以同時在 對應所述通孔的兩側各形成至少一個電極小通孔2 8丨以構 成電極的一部分。 步驟S23)設置孔壁金屬層： 採用電鍍工藝、沉積工藝或絲網印刷工藝，在所述通 孔23内壁設置上金屬層231，起反射作用；在具有電極小 通孔281優選方案中，還可在此步驟中在所述電極小通孔 内壁設置金屬層構成電極導電層282 (如圖6C所示），以 構成正負電極的一部分。 步驟S24)第一次姓刻： 保留所述覆有金屬層線路板上表面的金屬層一 21;採 用蝕刻工藝去掉覆有金屬層線路板下表面的大部分金屬層 二22,其中，保留至少圍繞所述通孔23底部邊緣的金屬 層221，作為後續工藝中形成芯片安放部的基礎。在設置 有電極小通孔的優選方案中，還可以保留金屬層二22中圍 201218462 繞小通孔281底部邊緣的金屬層222，作為後續工藝中形 成正負電極層二的基礎，以構成支架正負電極層的—部 分。（如圖6D所示） 步驟S25)増加金屬層厚度： 通過溶合工藝、沉積工藝或電鍍工藝增加所述線路板 下表面的金屬層厚纟，在所述金屬層二上增加與之成_體 結構的金屬層三構成厚金屬層，使孔底部的金屬層達到能 φ 夠承載LED芯片的厚度。 實現該步驟的一個優選的方案是：通過連接金屬箔實 現增加金屬層厚度，即在雙面覆金屬層線路板2的下表 面，將一金屬猪24同雙面覆金屬層線路板2疊合併層壓， 形成厚金屬層。具體分為兩步驟：丨）壓合金屬箔：採用粘 合工藝將金屬箔24壓合粘貼在所述線路板底部，形成假連 接，所述假連接是附圖6F所示的連接；2)使金屬落與所 述線路板底部的金屬層一體化：採用熱熔工藝、電鍍工藝 鲁或"L·積工藝使所述線路板底部的金屬層與所述金屬箔形成 緻密連接，成一體結構，形成厚金屬層。 在上述優選方案中，壓合金屬箔步驟可以通過採用粘 。膠片25將金屬诂24粘貼在所述雙面覆金屬層線路板2 底邛實現，具體步驟是：Α)將粘合膠片25置於所述金屬 4 24與雙面覆金屬層線路板2底部之間；β )高溫加熱， 所述粘合膠片25溶解成具有粘貼性的狀態，進而將所述金 屬、4 24壓合粘貼在雙面覆金屬層線路板2底部，使金屬箔 24與雙面覆金屬層線路板2物理枯貼在一起，形成附圖π 17 201218462 所示的假連接。在具有電極小通孔的優選方幸 尔r，還在所 述線路板的電極用小通孔281底部的金屬層222與金屬狄 24形成如附圖6F所示的假連接。金屬箔與雙面覆金屬層 線路板一體化步驟可以採用熱熔工藝、電鍍工藝或沉積工 藝實現，使所述雙面覆金屬層線路板底部2通孔周圍的金 屬層221與金屬箔24緻密連接，形成一體結構，實現金屬 箔與雙面覆金屬層線路板一體化。優選的是，在具有電極 小通孔的情況下，還包括使得所述線路板的電極用小通孔 281底部的金屬層222與金屬箔24緻密連接一起，形成一 體結構的厚金屬層（如附圖6E、6F、6G所示）。 在本步驟中，通過壓合金屬箔步驟後，雖然金屬箔24 與雙面覆金屬層線路板2物理粘貼在一起，但是所述通孔 23底部的金屬層221與金屬箱24沒有完全真正連接成一 體結構，這將導致LED支架在如“紅墨水，，等可靠性試驗中 出現不合格的問題’影響LED支架的可靠性與穩定性。通 過金屬箱與雙面覆金屬層線路板一體化步驟，使所述雙面 覆金屬層線路板2底部與金屬箔24緻密連接一起，實現了 金屬箱與雙面覆金屬層線路板一體化，克服了由於上述可 靠性試驗嚴重不合格的缺陷，增強了本功率LED支架的可 靠性。另外，此步驟還可平滑通孔底部，增加反光率。 步驟S26)第二次触刻： 採用蝕刻工藝蝕刻金屬層一 21形成線路層一 26,蝕 刻所述厚金屬層形成線路層二27，在厚金屬層24上形成 線路層二27 ;所述線路層一 26包括引線連接部261和正 201218462 負電極層一 262，其中，引線連接部261分別電性連接正 負電極層一 262 ;所述線路層二27包括芯片安放部271和 正負電極層二272，二者相互電性絕緣，其中芯片安放部 271是置於通孔23底部且密封通孔23底部的金屬落以部 分，用以承載LED芯片。（如圖6H所示），在具有正負電 極小通孔的優選方案中，還在蝕刻時形成的所述正負電極 層二272 ’所述正負電極層〕272是位於電極小通孔281 底部且密封電極小通孔281底部的金屬層部分。電極小通 孔281内壁的金屬層282分別電性連接正負電極層一犯 與正負電極層二272，共同形成功率咖支架的正負電極 18。（如圖6H所示） 與實施例-所述相同，還可以在金屬層㈣步驟後進 行可選的電鍵線路層步驟S26a):即通過電链卫藝在所述線 路層一 26、線路層二”、通孔23底部的金屬箱24上表面、 通孔23側壁的金屬層加形成金屬電鍍層，如銀層、金層、 錫層等類似的金屬層，以增加光亮度和可焊性。 與實施例一所述相同，摄·w 一 I I邗Η還可以在金屬層蝕刻步驟後進 行可選的安裝杯罩板步驟S26，） ；具體步驟與實施例一所 述的相關内容相同，在此不再贅述。 ::兩可選步驟為非必要步驟，在其他實施例可以省 去該俩步^驟或其中之一。 步驟S27)分離出功率LED支架單元：Epoxy Material Grade-3 ), CEM-1 (Composite Epoxy Material Grade-1 in Grade 1), FR-1 (flame resistant laminates Grade-1 in Grade 1), FR-2 (Class 2 flame retardant paper substrate, English flame resistant laminates Grade-2), may also preferably use a bismaleimide resin substrate (BT), and similar substrates; sub-step 2) by mechanical, laser process or corrosion a process of forming a cup hole corresponding to the position and the number of the blind holes in the step S12) on the substrate to form a cup cover plate. Preferably, the cup hole is a reflective cup or a cylinder, sub-step 3) Coating the surface of the cup cover with black material to increase the contrast of the device; sub-step 4) pasting the cover plate to the surface of the circuit board formed after step si5) or step SI 5a), wherein the cup The body diameter is larger than the diameter of the blind hole, and the entire circuit layer except the lead connection portion is shielded. Wherein sub-step 3) is an optional step, the sub-step may be omitted; sub-step 4) - a preferred embodiment is: A) placing a dry film between the cup cover and the surface of the board; B) heating at a high temperature, the dried film is dissolved into a state of (four) stickers, and (4) the surface of the circuit board and the cup cover. Since the above steps S15a) and S15a) are unnecessary steps, the two steps or one of them may be omitted in other embodiments. The above process adopts the processing technology of ordinary insulating board, and the process is simple, the yield is high, and the production efficiency is greatly improved compared with the prior art, and the processing cost is reduced. For the power (four) bracket unit formed in the above steps, the table-mounted bracket can replace the existing pLCC bracket for the high-power LED and the ceramic 201218462 porcelain substrate bracket; for the power sub-bracket unit formed by including the step S15a, The traditional top-emitting LED bracket is especially suitable for the top-emitting LED device for display screens. In this embodiment, the process used is very simple, and the metal-clad circuit board is double-sided! Forming a blind via metal conductive layer 131, and forming a metal layer 3 directly on the metal layer 2 of the circuit board or forming a thick metal layer formed by a dense connection to form a body structure, the process solves the bottom edge of the hole The problem of voids between Lu and the metal piece and the resulting problem of reliability test such as red ink are not improved, the power is increased [the reliability of the printing stand, and at the same time, due to the process of the embodiment, the blind hole The bottom forms a thick metal layer of integral structure, which makes the bottom of the blind hole smoothly connected, which improves the light extraction rate of the lEE> product. Embodiment 2 According to FIG. 5 and FIG. 6 , a second embodiment of a method for manufacturing a power LED bracket is provided. The process flow chart of this embodiment is given as the blue 5, and the specific manufacturing steps of the embodiment are described below in conjunction with the process steps shown in Fig. 6. Step scale S21) Preparing a double-sided metal-clad circuit board: Preparing a double-sided metal-clad circuit substrate 2, including a common insulating substrate 20, a metal layer 21 covering the upper surface of the substrate, and covering the lower surface of the substrate The metal layer 22; the material of the substrate 20 has no special requirements. For a common insulating board, such as a PCB board, it is preferable to use an inexpensive glass fiber cloth substrate (FR-4), CEM-3 (3 level composite). Epoxy material, British 15 201218462 Composit Epoxy Material Grade-3), CEM-l (Class 1 composite epoxy material, English Composit Epoxy Material Grade-1), can also preferably be Bismaleimide resin (BT) and The substrate of a similar material is a substrate; preferably, the metal layer is a copper layer. (As shown in FIG. 6B) Step S22) forming a via hole: forming at least one through hole 23 on the double-sided metal-clad circuit board 2 by a mechanical process, a laser process or a resistive process (as shown in FIG. 6B) A preferred solution is that the through holes can be arranged as an array of through holes in the row to form a support substrate (not shown in FIG. 6) in which the through holes 23 are arranged in a row; another preferred solution is At this step, at least one small via hole 28 丨 may be simultaneously formed on both sides of the corresponding via hole to constitute a part of the electrode. Step S23) setting the hole wall metal layer: using an electroplating process, a deposition process or a screen printing process, the upper metal layer 231 is disposed on the inner wall of the through hole 23 to perform reflection; in the preferred solution having the electrode small through hole 281, In this step, a metal layer may be provided on the inner wall of the small via hole to constitute the electrode conductive layer 282 (as shown in Fig. 6C) to constitute a part of the positive and negative electrodes. Step S24) first surname engraving: retaining the metal layer 21 coated on the surface of the metal layer circuit board; removing most of the metal layer 22 covered by the lower surface of the metal layer circuit board by an etching process, wherein, at least The metal layer 221 surrounding the bottom edge of the through hole 23 serves as a basis for forming a chip mounting portion in a subsequent process. In a preferred embodiment in which the electrode small via hole is provided, the metal layer 222 surrounding the bottom edge of the small via hole 281 in the metal layer 22 may be retained as a basis for forming the positive and negative electrode layer 2 in the subsequent process to form the positive and negative of the bracket. The part of the electrode layer. (As shown in FIG. 6D) Step S25) Adding a metal layer thickness: increasing the thickness of the metal layer on the lower surface of the wiring board by a fusion process, a deposition process, or an electroplating process, and increasing the thickness on the metal layer 2 The metal layer 3 of the bulk structure constitutes a thick metal layer such that the metal layer at the bottom of the hole reaches a thickness capable of carrying the LED chip. A preferred solution for realizing this step is to increase the thickness of the metal layer by connecting the metal foil, that is, to laminate a metal pig 24 with a double-sided metal-clad circuit board 2 on the lower surface of the double-sided metal-clad circuit board 2. Laminated to form a thick metal layer. Specifically, it is divided into two steps: 丨) pressing the metal foil: the metal foil 24 is press-bonded to the bottom of the circuit board by a bonding process to form a false connection, and the dummy connection is the connection shown in FIG. 6F; 2) Integrating the metal drop with the metal layer at the bottom of the circuit board: forming a dense connection between the metal layer at the bottom of the circuit board and the metal foil by using a hot melt process, a plating process, or a “L·product process” Structure to form a thick metal layer. In the above preferred embodiment, the step of pressing the metal foil may be carried out by using a paste. The film 25 is adhered to the bottom of the double-sided metal-clad circuit board 2, and the specific steps are: placing the adhesive film 25 on the bottom of the metal 4 24 and the double-sided metal-clad circuit board 2 Between the high temperature heating, the adhesive film 25 is dissolved in a state of adhesiveness, and the metal, 4 24 is pressure-bonded to the bottom of the double-sided metal-clad circuit board 2, so that the metal foil 24 and the double The metal-clad circuit board 2 is physically pasted together to form a dummy connection as shown in Fig. π 17 201218462. In the preferred square having the small via holes of the electrode, the metal layer 222 at the bottom of the small through hole 281 of the electrode of the wiring board is also formed with the metal dummy 24 as a dummy connection as shown in Fig. 6F. The step of integrating the metal foil and the double-sided metal-clad circuit board can be realized by a hot-melt process, an electroplating process or a deposition process, so that the metal layer 221 around the through-hole 2 of the double-sided metal-clad circuit board is dense with the metal foil 24 The connection is formed into an integrated structure to realize integration of the metal foil and the double-sided metal-clad circuit board. Preferably, in the case of having small through-holes, the electrode of the circuit board is densely connected with the metal foil 222 at the bottom of the small through-hole 281 to form a thick metal layer of a unitary structure (eg 6E, 6F, 6G). In this step, after the step of pressing the metal foil, although the metal foil 24 is physically bonded to the double-sided metal-clad circuit board 2, the metal layer 221 at the bottom of the through-hole 23 is not completely connected to the metal box 24. Integral structure, which will cause the LED bracket to suffer from the problem of failure in the reliability test such as "red ink, etc." affecting the reliability and stability of the LED bracket. Integration of the metal box and the double-sided metal-clad circuit board In the step, the bottom of the double-sided metal-clad circuit board 2 is densely connected with the metal foil 24, thereby realizing the integration of the metal box and the double-sided metal-clad circuit board, thereby overcoming the defect that the reliability test is seriously unqualified. The reliability of the power LED bracket is enhanced. In addition, this step can also smooth the bottom of the through hole to increase the reflectivity. Step S26) The second touch: etching the metal layer 21 by an etching process to form the wiring layer 26, etching station The thick metal layer forms the wiring layer 27, and the wiring layer 227 is formed on the thick metal layer 24; the wiring layer 26 includes a lead connecting portion 261 and a positive 201218462 negative electrode layer 262. The lead connecting portion 261 is electrically connected to the positive and negative electrode layers 262, respectively; the circuit layer 227 includes a chip mounting portion 271 and positive and negative electrode layers 272, which are electrically insulated from each other, wherein the chip mounting portion 271 is placed in the through The bottom of the hole 23 and the metal at the bottom of the sealing through hole 23 are dropped to carry the LED chip. (As shown in FIG. 6H), in the preferred embodiment having the small through holes of the positive and negative electrodes, the positive and negative forms formed at the time of etching. The electrode layer 272' of the positive and negative electrode layer 272 is a metal layer portion located at the bottom of the electrode small through hole 281 and sealing the bottom of the electrode small through hole 281. The metal layer 282 on the inner wall of the electrode small through hole 281 is electrically connected to the positive and negative electrode layers, respectively. The positive and negative electrodes 18 of the power coffee holder are formed together with the positive and negative electrode layers 272. (As shown in FIG. 6H) In the same manner as in the embodiment, an optional key circuit layer step may be performed after the metal layer (4) step. S26a): a metal plating layer, such as a silver layer, is formed by a metal layer of the upper surface of the metal case 24 at the bottom of the through hole 23 and the metal layer of the through hole 23 at the bottom of the circuit layer 26, the circuit layer 2" Gold layer, tin Layers and similar metal layers to increase brightness and solderability. As described in the first embodiment, the optional cover plate step S26 can be performed after the metal layer etching step; the specific steps are the same as those described in the first embodiment, This will not be repeated here. The two optional steps are non-essential steps, and the two steps or one of them may be omitted in other embodiments. Step S27) separating the power LED bracket unit:
工經過上述步驟形成的功率L LED支架單元。 刀離出獨立的功革 19 201218462 上述工藝採用的是普通絕緣板的加工工藝，工藝簡 單，成品率高，相對於現有技術很大程度提高生產效率， 降低了加工成本。 在本實施例的工藝中，採用的工藝十分簡單，在雙面 覆金屬層線路板1上形成的通孔金屬導電層23丨、金屬層 二與粘貼的金屬箔後形成緻密連接而構成—體結構的厚金 屬層，該工藝解決了孔底部的邊緣與金屬層之間可能出現 空隙和由此所引起的不易通過如“紅墨水，，等可靠性試驗的 問題，提高了功率LED支架的可靠性，同時，由於本實施籲 例工藝，在通孔内壁設置的金屬層與通孔底部的厚金屬層 形成一體結構的，使孔底部光滑連接，提高了 Led產品的 出光率。 實施例三 根據圖7所示，為本發明提供的一種功率led支架， 其結構包括：一雙面覆金屬層線路板為支架基板3，至少The power L LED bracket unit formed by the above steps. The knife leaves the independent functional leather 19 201218462 The above process adopts the processing technology of ordinary insulating board, the process is simple, the yield is high, the production efficiency is greatly improved compared with the prior art, and the processing cost is reduced. In the process of the embodiment, the process is very simple, and the through-hole metal conductive layer 23, the metal layer 2 and the metal foil formed on the double-sided metal-clad circuit board 1 form a dense connection to form a body. The thick metal layer of the structure, the process solves the problem that the gap between the edge of the bottom of the hole and the metal layer may occur, and thus the difficulty of passing the reliability test such as "red ink, etc., improves the reliability of the power LED bracket. At the same time, due to the process of the present embodiment, the metal layer disposed on the inner wall of the through hole and the thick metal layer at the bottom of the through hole form an integral structure, so that the bottom of the hole is smoothly connected, thereby improving the light extraction rate of the Led product. FIG. 7 is a power led bracket provided by the present invention, the structure comprising: a double-sided metal-clad circuit board as a support substrate 3, at least
包括位於通孔31周圍、 ，所述金屬層一 33構成線路層一， 用於焊接金屬線的引線連接部331 20 201218462 T及位於所述通孔兩側的正負電極層-332,且引線連接 331 /刀別電性連接正負電極層一 332;所述金屬層二34 構成線路層二’包括圍繞通孔31底部的金屬層341和圍繞 電極小通孔321底部的金屬層342 ;所述通孔31内壁鍍有 金屬層311起反射作用；還包括一置於所述支架基板3底 4的金屬35’其中密封所述通孔31底部的金屬箔35部 刀稱為芯片安放部351 ;所述金屬箔35通過粘合膠片36 •粘貼在支架基板3的底部，並且金屬箔35與通孔31底部 的金屬層341成一體結構；所述金屬箔乃還包括與芯片安 放部351電性絕緣的正負電極層二352。所述電極導電層 322或所述導電材料（未標示）與所述正或負電極層一 332、正或負電極層二352電性連接。 實施例四 根據圖8所示’本發明提供一種功率led支架的具體 # 實施例二，其結構與上述具體功率LED支架實施例一的區 別在於：還包括一設置於支架基板3上表面的杯罩板37。 其中，該杯罩板37是通過粘合膠片36與支架基板3上表 面連接；該杯罩板37還包括與通孔31位置對應的孔狀杯 體即杯孔3 71 ;該杯孔3 71的孔徑大於通孔31的孔徑，且 引線連接部331暴露在杯孔371中；該杯罩板37覆蓋正負 電極32。優選的是’該杯罩板37杯孔371可以是反射杯 狀或者圓柱狀’不限於本實施例；優選的是，該杯罩板37 上表面可以塗覆黑色材料’增加對比度，特別適合應用於 21 201218462 戶内外led顯示幕中。 實施例五 根據圖9所示’為本發明提供的-種功率LED支架具 體實施例三，其往爐白扭.^ 一 并°構包括.一雙面覆金屬層線路板為支架 基板4，至少—個設置在所述支架基板4的盲孔4卜以及 位於盲孔“兩側的正負電極.其申，所述支架基板斗 是由金屬層一 43、金屬層二44和置於所述兩金屬層之間 的絕緣基板組成；所述金屬層一 43構成線路層一，包括位 於盲孔4!周圍 '用於焊接金屬線的引線連接部43ι以及位 於所述盲孔兩侧的正負電極層—432,且引線連接部431 分別電性連接正負電極層—432;所述金屬層二Μ構成線 路層二，包括作為盲孔41底部的金屬層（稱為芯片安放部 44"和正負電極層二442;所述盲孔41内壁鍍有金屬層 411起反射作用；所述芯片安放部441與正、負電極層二 442電性絕緣。優選的是’所述正或負電極42還包括至少 -個貫穿支架金屬層一 43、基板4的電極小盲孔421，在 所述電極小盲孔421内壁設置有電極導電I似或填入導 電材料（未標注），所述電極導電層422或所述導電材料與 所述正或負電極層一 432、正或負電極層二442電性連接。 實施例六 根據圖ίο所示，為本發明提供的一種功率led支架 具體實施例四，其結構與上述實施例三的區別在於：還包 22 201218462 括一設置於支架基板4上表面的杯罩板45。其中，該杯罩 板45是通過枯合膠片46與支架基板4上表面連接；該杯 罩板45還包括與盲孔41位置對應的孔狀杯體即杯孔451; 3亥杯孔4 51的孔徑大於盲孔41的孔徑，且引線連接部4 31 暴露在杯孔451中，·該杯罩板45覆蓋正負電極該杯 罩板45可以是反射杯狀或者圓柱狀，不限於本實施例；在 其他實施例中，該杯罩板45上表面可以塗覆黑色材料，增 _ 加對比度’特別適合應用於戶内外LED顯示幕中。 綜上所述，本發明克服了現有技術偏見，採用普通絕 緣板作為製造功率LED支架的基板，工藝方法簡單、成品 率高，產品結構設計獨特，產品成本低、普及性強，其散 熱效果良好、應用範圍廣，適於工業化批量生產，取得了 十分突出的技術效果。 3 明說 單 簡式 圖 圖1所示為現有技術的功率㈣用PLCC型支架結構 示意圖； 圖2所示為現有技術的功率LED用陶竞基板支架結構 示意圖； 圖3所示是本發明方法的笛 圖； 古的第一個實施例的工藝流程 圖4所示是本發明方法的 t 面 · 圃 ， 圖5所示是本發明方法 的第一個實施例的工藝步驟示 的第二個實施例的工藝流程 23 201218462 圆， 圖6所示是本發明方 意圖； 、帛一個冑施例的工藝步驟示 圖7所示是本發明的功率咖 示意圖； 〃帛個實施例結構 圖8所示是本發明的功率le 示意圖； 又架第一個實施例結構 第二個實施例結構 圖9所示是本發明的功率LED支架 不意圖， 圖10所示是本發明的功率led Φ担埜加成 刀平LiiJJ克架第四個實施例結 構示意圖。 【主要元件符號說明】 01.·塑膠外殼；02..金屬引線框架； 03、171、271、351、441..芯片安放部；〇4 LED 芯片； 05.. 電極用引腳；06.·基板；ο?..反射腔；〇8、23、31通孔； 1、2..雙面覆金屬層的線路基板； 10.. 普通絕緣基板（簡稱基板）；11、2卜33、43..金屬層一； 12、22、34、44..金屬層二；13..盲孔；131..金屬反射層； 14卜421..電極小盲孔；142、282、322、422..電極導電層； 14、24、35.，金屬笛；15..厚金屬層；16、26..線路磨一； 161、 331、431..引線連接部； 162、 262、332、432..正負電極層一；17、27..線路層二； 172、272、3 52、442·.正負電極層二；20,.普通絕緣基板； 24 201218462 221.. 通底部邊緣的金屬層； 222.. 電極小通孔底部邊緣金屬層；231..金屬反射層； 25、36、46..粘合膠片；261..引線連接部； 281、321..電極小通孔；3、4..支架基板； 311、411..孔壁金屬層；32、42..正負電極； 341.. 孔底部金屬層；342..電極小通孔底部金屬層； 37、41、45·.杯罩板；371、451..杯孔。Included in the periphery of the through hole 31, the metal layer 33 constitutes a circuit layer 1, a lead connection portion 331 20 201218462 T for soldering the metal line, and a positive and negative electrode layer -332 on both sides of the through hole, and the lead connection 331 / knives are electrically connected to the positive and negative electrode layers 332; the metal layer 234 constitutes a circuit layer ii' including a metal layer 341 surrounding the bottom of the through hole 31 and a metal layer 342 surrounding the bottom of the electrode small through hole 321; The inner wall of the hole 31 is plated with a metal layer 311 for reflection; further comprising a metal 35' disposed on the bottom 4 of the support substrate 3, wherein the metal foil 35 which seals the bottom of the through hole 31 is called a chip mounting portion 351; The metal foil 35 passes through the adhesive film 36 • is attached to the bottom of the holder substrate 3, and the metal foil 35 is integrated with the metal layer 341 at the bottom of the through hole 31; the metal foil further includes electrical insulation from the chip mounting portion 351 The positive and negative electrode layers are two 352. The electrode conductive layer 322 or the conductive material (not labeled) is electrically connected to the positive or negative electrode layer 332, the positive or negative electrode layer 352. Embodiment 4 According to FIG. 8 , the present invention provides a specific embodiment of a power LED bracket. The second embodiment of the present invention is different from the specific power LED bracket embodiment 1 in that it further includes a cup disposed on the upper surface of the bracket substrate 3 . Cover plate 37. The cover plate 37 is connected to the upper surface of the support substrate 3 through the adhesive film 36. The cover plate 37 further includes a hole-shaped cup corresponding to the position of the through hole 31, that is, a cup hole 3 71; the cup hole 3 71 The aperture is larger than the aperture of the through hole 31, and the lead connecting portion 331 is exposed in the cup hole 371; the cup cover 37 covers the positive and negative electrodes 32. Preferably, the cup cover 37 cup hole 371 may be a reflective cup or a cylinder shape is not limited to the embodiment; preferably, the upper surface of the cup cover plate 37 may be coated with a black material to increase contrast, which is particularly suitable for application. On 21 201218462 indoor and outdoor led display. Embodiment 5 is a third embodiment of the power LED bracket provided by the present invention according to FIG. 9 , which is a white twisted to the furnace. The double-sided metal-clad circuit board is the support substrate 4 . At least one of the blind holes 4 disposed on the support substrate 4 and the positive and negative electrodes on both sides of the blind hole. The support substrate is formed by a metal layer 43 and a metal layer 44 and placed therein. An insulating substrate composed of two metal layers; the metal layer 43 constitutes a circuit layer 1 including a lead connecting portion 431 for soldering metal wires around the blind hole 4! and positive and negative electrodes on both sides of the blind hole a layer 432, and the lead connecting portion 431 is electrically connected to the positive and negative electrode layers 432, respectively; the metal layer Μ constitutes the circuit layer 2, and includes a metal layer as a bottom portion of the blind hole 41 (referred to as a chip mounting portion 44" and positive and negative electrodes Layer 2 442; the inner wall of the blind hole 41 is plated with a metal layer 411 for reflection; the chip mounting portion 441 is electrically insulated from the positive and negative electrode layers 442. Preferably, the positive or negative electrode 42 further includes At least one of the through-bracket metal layer-43, the substrate 4 a very small blind hole 421, on the inner wall of the small electrode blind hole 421 is provided with an electrode conductive I like or filled with a conductive material (not labeled), the electrode conductive layer 422 or the conductive material and the positive or negative electrode layer 432, the positive or negative electrode layer 442 is electrically connected. Embodiment 6 is a power LED bracket according to the embodiment of the present invention, and the difference between the structure and the above embodiment 3 is: 201218462 includes a cup cover 45 disposed on the upper surface of the support substrate 4. The cover plate 45 is connected to the upper surface of the support substrate 4 by the dead film 46; the cover plate 45 further includes a position corresponding to the blind hole 41. The hole-shaped cup body is the cup hole 451; the hole diameter of the 3 hole cup hole 4 51 is larger than the hole diameter of the blind hole 41, and the lead wire connection portion 4 31 is exposed in the cup hole 451, the cover plate 45 covers the positive and negative electrode The plate 45 may be a reflective cup or a cylinder, and is not limited to the embodiment; in other embodiments, the upper surface of the cup cover 45 may be coated with a black material, and the contrast ratio is particularly suitable for indoor and outdoor LED display screens. In summary, the present invention The prior art prejudice adopts ordinary insulating board as the substrate for manufacturing power LED bracket, the method is simple, the yield is high, the product structure is unique, the product cost is low, the popularity is strong, the heat dissipation effect is good, the application range is wide, and it is suitable for industrialization. Mass production has achieved outstanding technical results. 3 Description of single-simplified diagram Figure 1 shows the structure of the prior art power (4) PLCC-type bracket structure; Figure 2 shows the structure of the prior art power LED substrate Figure 3 is a flute diagram of the method of the present invention; the process flow diagram 4 of the first embodiment of the present invention is shown as the t-plane of the method of the present invention, and Figure 5 is the first of the method of the present invention. The process flow of the second embodiment is shown in the process flow 23 of the second embodiment. 201218462 is a circle, and FIG. 6 is a schematic view of the present invention. FIG. 7 is a schematic diagram of the power coffee of the present invention. FIG. 8 is a schematic diagram of the power le of the present invention; the structure of the second embodiment is shown in FIG. The power LED bracket of the present invention is not intended to be shown in Fig. 10. Fig. 10 is a schematic view showing the structure of the fourth embodiment of the power LED Φ wild-addition knife flat LiiJJ of the present invention. [Description of main component symbols] 01.·Plastic case; 02.. Metal lead frame; 03, 171, 271, 351, 441.. Chip mounting part; 〇4 LED chip; 05.. Electrode pin; 06. Substrate; ο?.. reflection cavity; 〇8, 23, 31 through hole; 1, 2.. double-sided metal-clad circuit substrate; 10.. ordinary insulating substrate (referred to as substrate); 11, 2, 33, 43 .. metal layer one; 12, 22, 34, 44.. metal layer two; 13. blind hole; 131.. metal reflective layer; 14 421.. electrode small blind hole; 142, 282, 322, 422. Electrode conductive layer; 14, 24, 35., metal flute; 15. thick metal layer; 16, 26.. line grinding one; 161, 331, 431.. lead connection; 162, 262, 332, 432. Positive and negative electrode layer one; 17, 27.. circuit layer two; 172, 272, 3 52, 442 · positive and negative electrode layer two; 20, ordinary insulating substrate; 24 201218462 221.. through the bottom edge of the metal layer; .. electrode small through hole bottom edge metal layer; 231.. metal reflective layer; 25, 36, 46.. adhesive film; 261.. lead connection; 281, 321.. electrode small through hole; 3, 4. . bracket substrate; 311, 411.. hole wall metal layer; 32, 42.. Electrode; 341 .. bottom via metal layer; small through holes 342 .. electrode base metal layer;. · Cup plate 37,41,45; 371,451 .. cup holes.
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