TW201145502A - Semiconductor light-receiving element and optical module - Google Patents
Semiconductor light-receiving element and optical module Download PDFInfo
- Publication number
- TW201145502A TW201145502A TW100103612A TW100103612A TW201145502A TW 201145502 A TW201145502 A TW 201145502A TW 100103612 A TW100103612 A TW 100103612A TW 100103612 A TW100103612 A TW 100103612A TW 201145502 A TW201145502 A TW 201145502A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- light
- receiving element
- main surface
- semiconductor light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 230000003287 optical effect Effects 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 6
- 230000000052 comparative effect Effects 0.000 description 12
- 238000012544 monitoring process Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- -1 polar bodies Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Description
201145502 38、40〜p型領域(半導體領域); 42〜陽極電極(第1電極); 44〜陰極電極(第2電極); 4 6〜低反射膜。 五、 ^案若有化學辆’請揭辞能穌發日__化學式: 六、 發明說明: 【發明所屬之技術領域】 本發明係有關於能夠防止* &返目光的半一 技》土 _1杜通·又光元 【先前技術】 、…使用於光通信的S模組中’纟雷射:極體等半導體發 、、件的旁面配置有監控半導體發光元件的發光量的半導 體受光元件(例如,專利文獻1的段落0007)。 專利文獻1 :特開2〇〇〇-3661 5號公報 I姜的+ 1體受光元件在入射光的面設置有集光 鏡或電極等。入射光在這些集光鏡或電極等反射,此反射 光返回半導體發光元件,造成反射光與人射光干涉,半導 體發光元件的監控電流減少的問題(不良返回光)。 本發月為了解決上述的問題,而提出一種能夠防止不 良返回光的半導體受光元件及光模組。 201145502 【發明内容】 本發明的半導體受光元件, • 丨卞 匕枯.第1導電型丰導體 基板,具有相對的第i主面盥 牛等 ,、弟Z主面’第1導電型的第 1半導體層,設於該半導 • 牛導體基板的該第1主面,具有比該 半導體基板的帶隙更小的帶隙.篦 丨糸,第1導電型的第2半導體 層,設於該第1半導體層上.笸 彳菔層上’第2導電型的半導體領域, 設於該第2半導體層的一部分. , 口丨刀上,第1電極,連接該第2 半導體層,第2電極’連接該丰導# 通牛等體領域,以及低反射膜, 設於該半導體基板的該第2主 ® 这牛導體基板的該第2 主面為入射光的受光面,且兮束道挪 "哀牛導體基板的該第2主面上 並沒有設置任何會使該入射光反射率 兀*汉耵半比δ亥低反射膜高的物 質或構造。 利用本發明能夠防止不良的返回光。 【實施方式】 參照圖式來說明本發明實施例的半導體受光元件及光 模組。相同的構成要素會標示相同的符號,而省略重複的 說明。 實施例1 第1圖係顯示實施例丨的光模組的剖面圖。支持部1〇 上安裝有底座12、14。底座12的側面接合有半導體發光 疋件16。底座14上接合有雷射二極體等的半導體受光元 件18。此半導體受光元件18配置於半導體發光元件“的 201145502 背面’將半導體發光元件16背面所發出的背面光做為入射 光接收。引針20、22貫穿支持部1〇。 第2圖係顯示實施例1的半導體受光元件用的底座的 上視圖°底座14的上面設有配線24、26。此配線24、26 分別透過導線28、30連接到引針20、22。 第3圖係顯示實施例1的半導體受光元件的剖面圖。η 型InP基板32具有相對的表面(第1主面)與背面(第2主 面)。11型InP基板32的表面上設有inGaAs層34。此η型 InGaAs層34具有比η型ΙηΡ基板32的帶隙(band抑?)更 小的帶隙。
η型InGaAs基板34上設有η型InP層36。η型InP 層36的一部分設有P型領域38、40。 π型InP層36與p型領域38連接了陰極電極42,? 型領域40連接了陽極電極44。陰極電極42與陽極電極44 由Τι膜及形成於其上的虹膜所組成。半導體受光元件18 的陰極電極42及陽極電極44分別透過焊料連接到配線 24 ' 26 » 在此,也可以沒有ρ型領域38。但是,在陰極電極42 處設置ρ型領域38可與周圍的η型ΙηΡ層36短路而形成 等電位,能夠消滅反應緩慢的載子,提昇反應速度。 η型InP基板32的背面上設有以SiN構成的低反射膜 46。η型InP基板32的背面為入射光的受光面。Inp 基板32的背面並沒有設置集光鏡或階差等會使入射光反 射率會比低反射膜高的物質或構造。 201145502 在此,將本實施例與比較例比較來說明本實施例的效 果。第4圖係顯示比較例的光模組的剖面圖。在比較例中, 為了防止不良的返回光,底座14的上面被切成斜面。另一 方面,在本實施例中,半導體受光元件已經考量了的不良 返回光的因應對策’因此不需要將底座14切成斜面,能夠 減低製造成本。 第5圖係顯示比較例1的背面入射型半導體受光元件 的剖面圖。比較例1當中,受光面的n型InP基板32的背 面上设有遮光罩48與集光鏡50。藉由遮光罩,偏離受光 部的入射光會反射,能夠去除反應緩慢的成分。因此如果 在追求反應速度的用途上相當有用。然而,使用於監控半 導體發光元件16的監控時就會有不良返回光的問題。另一 方面,在本實施例中沒有受光面設置遮光罩48或集光鏡 50 ’所以能夠防止不良的返回光。 第6圖係顯示比較例2的表面入射型半導體體受光元 件的剖面圖》比較例2當中,受光面的p型領域4〇上設有 環狀的陽極電極44。入射光會因此陽極電極44而反射, 造成不良反射光的問題《另一方面,在本實施例中沒有在 受光面設置電極,因此能夠防止不良的返回光。又因為受 光面沒有電極,受光部範圍能夠比表面入射型來得大,能 夠增加監控電流。 第7圖係顯示比較例 上視圖。比較例2當中, 2的半導體受光元件用的底座的 半導體受光元件18上的陽極44 與底座14上的配線26必須以導線52連接。另_方面,在 201145502 本實施例中’半導體受光元件18的陰極電極42與陽極電 極44僅使用焊料焊接於底座14上的配線^、“完成晶片 的組立,因此不需要打線接合到半導體受光元件18的作業 步驟。也不會有因為打線接合造成的半導體受光元件18的 損壞。 如以上所述,在本實施例中,受光面的n型Inp基板 32的背面沒有設置遮光罩或集光鏡或階差等會使入射光反 射率會比低反射膜高的物質或構造。因此能夠防止不良的 返回光。 實施例2 第8圖係顯示實施例2的半導體受光元件的剖面圖D n 型InP基板32的背面為曲面《藉此在η型ιηρ基板32的 背面反射而回到半導體受光元件的反射光會更小,因此更 能確實地防止不良的反射光。 實施例3 第9圖係顯示實施例3的半導體受光元件的剖面圖。η 型InP基板32的背面被切為斜面,相對入射光的入射方向 傾斜。藉此在η型InP基板.32的背面反射而回到半導體受 光元件的反射光會更小,因此更能確實地防止不良的反射 光。 實施例4 第10圖係顯示實施例4的半導體受光元件的剖面圖。 η型InP基板32的背面被比起η型inp基板32的表面或η 型InP層36的表面等來得粗糙。藉此在η型InP基板32 201145502 的背面反射而回到半導體受光元件的反射光會更小’因此 更能確實地防止不良的反射光。 【圖式簡單說明】 第1圖係顯示實施例1的光模组的剖面圖。 第2圖係顯示實施例1的半導體受光元件用的底座的 上視圖。 第3 第4 第5 的剖面圖 圖係顯示實施例1的半導體受光元件的剖面圖。 圖係顯示比較例的光模組的剖面圖。 圖係顯示比較例1的背面入射型半導體受光元件 第6圖係顯示比較例2的表面入射划主播 此认叙, 型+導體體受光元 件的剖面圖。 第7圖係顯示比較例2的半導體受光元 上視圖。 用的底座的 圆係顯示實施例 第9 Hs 〇 又疋兀件的剖面獲 第9圖係顯示實施例3的半導體受光 ^ , n _ ^ U 1千的剖面g 0圖係顯示實施例4的半導體受光 又7^疋件的剖面 【主要元件符號說明】 10〜支持部; 12、14〜底座; 16〜半導體發光元件; 18〜半導體受光元件; 201145502 20、22〜引針; 2 4〜配線(第1配線); 2 6〜配線(第2配線); 28、30〜導線; 32〜η型InP基板(半導體基板); 34〜η型InGaAs層(第1半導體層); 36〜η型InP層(第2半導體層); 38、40〜p型領域(半導體領域); 42〜陽極電極(第1電極); 44〜陰極電極(第2電極); 4 6〜低反射膜 48〜遮光罩; 50〜集光鏡。 9
Claims (1)
- 201145502 七、申請專利範圍: 1·半導體受光元件,包括: 第1導電型半導體基板,具有相對的第i主面與第〗 主面; 第1導電型的第1丰導體屉,执认#, # 土』木i干导遛層,6又於該半導體基板的該 第1主面,具有比該半導體基板的帶隙更小的帶隙; 第1導電型的第2半導體層’設於該第1半導體層上; 第2導電型的半導體領域,設於該第2半導體層的一 部分上; 第1電極’連接該第2半導體層; 第2電極,連接該半導體領域;以及 低反射膜,設於該半導體基板的該第2主面, 其中該半導體基板的該第2主面為入射光的受光面, 且該半導體基板的該第2主面上並沒有設置任何會使該入 射光反射率比該低反射膜高的物質或構造。 2. 如申請專利範圍第丨項所述之半導體受光元件,其 中該半導體基板的該第2主面為曲面。 3. 如申請專利範圍第1項所述之半導體受光元件,其 中該半導體基板的該第2主面相對該入射光的入射方向傾 斜。 4. 如申§青專利範圍第1項所述之半導體受光元件,其 中該半導體基板的該第2主面比起該第1主面粗糙。 5. —種光模組,包括: 半導體發光元件;以及 10 201145502 如申請專利範圍第1-4項中任一項所述之半導體受光 元件,配置於該半導體發光元件的背面,將該半導體發光 元件的背面發出的背面光做為該入射光接收。 . ' 6.如申請專利範圍第5項所述之光模組,更包括: 底座,具有第1配線及第2配線,分別連接至該半導 體受光元件的該第1電極及該第2電極。 11
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010127802A JP2011253987A (ja) | 2010-06-03 | 2010-06-03 | 半導体受光素子及び光モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201145502A true TW201145502A (en) | 2011-12-16 |
Family
ID=44974027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100103612A TW201145502A (en) | 2010-06-03 | 2011-01-31 | Semiconductor light-receiving element and optical module |
Country Status (6)
Country | Link |
---|---|
US (1) | US8330243B2 (zh) |
JP (1) | JP2011253987A (zh) |
KR (1) | KR101296192B1 (zh) |
CN (1) | CN102270666A (zh) |
DE (1) | DE102011076887A1 (zh) |
TW (1) | TW201145502A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI666784B (zh) * | 2015-02-16 | 2019-07-21 | 日商艾普凌科有限公司 | 具有受光元件之光檢測半導體裝置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015176904A (ja) * | 2014-03-13 | 2015-10-05 | 三菱電機株式会社 | 半導体受光素子 |
JP2018066888A (ja) * | 2016-10-20 | 2018-04-26 | 住友電気工業株式会社 | 光モジュール |
US10365448B2 (en) | 2017-12-15 | 2019-07-30 | Sumitomo Electric Industries, Ltd. | Optical module having two lens system and monitor photodiode between two lenses |
DE102020117238A1 (de) * | 2020-06-30 | 2021-12-30 | First Sensor AG | Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement |
JP2022038202A (ja) * | 2020-08-26 | 2022-03-10 | 浜松ホトニクス株式会社 | 光検出装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2847561B2 (ja) | 1990-04-16 | 1999-01-20 | 富士通株式会社 | 半導体受光素子 |
EP0452801B1 (en) | 1990-04-16 | 1996-11-27 | Fujitsu Limited | Semiconductor device having light receiving element and method of producing the same |
JP2945438B2 (ja) * | 1990-04-23 | 1999-09-06 | 株式会社日立製作所 | 光半導体装置及びそれを用いた受光器 |
US5345074A (en) * | 1990-11-13 | 1994-09-06 | Sumitomo Electric Industries, Ltd. | Semiconductor light source |
JP2765321B2 (ja) * | 1991-11-29 | 1998-06-11 | 日本電気株式会社 | 半導体受光素子 |
JPH0653538A (ja) * | 1992-07-28 | 1994-02-25 | Toshiba Corp | 半導体受光素子 |
JP3115148B2 (ja) | 1993-03-31 | 2000-12-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPH1117211A (ja) | 1997-06-26 | 1999-01-22 | Hitachi Ltd | 半導体面型受光素子及び装置 |
US6043550A (en) | 1997-09-03 | 2000-03-28 | Sumitomo Electric Industries, Ltd. | Photodiode and photodiode module |
JP3419312B2 (ja) * | 1998-07-21 | 2003-06-23 | 住友電気工業株式会社 | 受光素子及び受光素子モジュール |
JP3221402B2 (ja) | 1998-06-22 | 2001-10-22 | 住友電気工業株式会社 | 受光素子と受光装置 |
JP3931545B2 (ja) * | 2000-03-22 | 2007-06-20 | 住友電気工業株式会社 | 発光モジュール |
EP1271720A4 (en) * | 2001-02-05 | 2005-12-07 | Sumitomo Electric Industries | OPTICAL TRANSMITTER |
JP2002289904A (ja) * | 2001-03-23 | 2002-10-04 | Sumitomo Electric Ind Ltd | 半導体受光素子とその製造方法 |
US6888857B2 (en) * | 2001-09-21 | 2005-05-03 | Sumitomo Electric Industries, Ltd. | Optical module |
EP1396913A1 (en) * | 2002-09-03 | 2004-03-10 | Agilent Technologies, Inc. - a Delaware corporation - | Single mode distributed feedback lasers |
JP2005072130A (ja) | 2003-08-21 | 2005-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPWO2005053124A1 (ja) * | 2003-11-28 | 2010-02-04 | 日本電気株式会社 | 分布帰還型半導体レーザ、分布帰還型半導体レーザアレイ及び光モジュール |
JP2006147991A (ja) | 2004-11-24 | 2006-06-08 | Canon Inc | 固体撮像素子及びそれを有する光学機器 |
JP2007013015A (ja) * | 2005-07-04 | 2007-01-18 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP2008010710A (ja) * | 2006-06-30 | 2008-01-17 | Oki Electric Ind Co Ltd | 半導体レーザ装置 |
JP2008047580A (ja) * | 2006-08-11 | 2008-02-28 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
US7670638B2 (en) | 2007-05-17 | 2010-03-02 | Sunpower Corporation | Protection layer for fabricating a solar cell |
KR101444709B1 (ko) | 2007-11-16 | 2014-09-30 | 주성엔지니어링(주) | 기판형 태양전지 및 그 제조방법 |
JP5303962B2 (ja) * | 2008-02-28 | 2013-10-02 | 三菱電機株式会社 | 半導体受光素子 |
US8476681B2 (en) * | 2009-09-17 | 2013-07-02 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
-
2010
- 2010-06-03 JP JP2010127802A patent/JP2011253987A/ja active Pending
-
2011
- 2011-01-31 US US13/017,072 patent/US8330243B2/en not_active Expired - Fee Related
- 2011-01-31 TW TW100103612A patent/TW201145502A/zh unknown
- 2011-06-01 DE DE102011076887A patent/DE102011076887A1/de not_active Ceased
- 2011-06-01 KR KR1020110052557A patent/KR101296192B1/ko not_active IP Right Cessation
- 2011-06-02 CN CN2011101473865A patent/CN102270666A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI666784B (zh) * | 2015-02-16 | 2019-07-21 | 日商艾普凌科有限公司 | 具有受光元件之光檢測半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
DE102011076887A1 (de) | 2011-12-08 |
KR101296192B1 (ko) | 2013-08-13 |
KR20110132990A (ko) | 2011-12-09 |
US20110297967A1 (en) | 2011-12-08 |
CN102270666A (zh) | 2011-12-07 |
JP2011253987A (ja) | 2011-12-15 |
US8330243B2 (en) | 2012-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8858030B2 (en) | Laser light source | |
TW201145502A (en) | Semiconductor light-receiving element and optical module | |
JP5210327B2 (ja) | 少なくとも1つの半導体基体を備えた発光チップ | |
JP2010041033A (ja) | Ledチップからの光導出を高める改良ボンドパッドのデザイン | |
US11257998B2 (en) | Semiconductor element package and autofocusing device | |
US9780523B2 (en) | Semiconductor laser device | |
TWI821302B (zh) | 半導體元件及其封裝結構 | |
KR20130012798A (ko) | 반도체 발광부 연결체 | |
CN106531864B (zh) | 发光装置 | |
CN110235258A (zh) | 光电子半导体芯片 | |
JP2009510737A (ja) | 光電半導体素子 | |
US20220320398A1 (en) | Optoelectronic semiconductor chip | |
TWI376818B (en) | Optoelectronic semiconductor chip (optoelektronischer halbleiterchip) | |
JP2008244368A (ja) | 光半導体モジュール及び受光素子 | |
TW201017938A (en) | Opto-electronic semiconductor element | |
US10553742B2 (en) | Back-surface-incident type light-receiving device and optical module | |
WO2017130596A1 (ja) | 半導体発光装置 | |
JP2002185069A (ja) | 受光素子及びそれを備える光半導体装置 | |
JP5779214B2 (ja) | マルチビーム半導体レーザ装置 | |
TW423166B (en) | Photodiode with the emitting surface and ohmic electrode located on different plane and its manufacturing method | |
JP2010205891A (ja) | 半導体装置 | |
JP2020188258A (ja) | 半導体素子 | |
JP2011040552A (ja) | マルチビーム半導体レーザ装置 | |
US7620090B2 (en) | Semiconductor laser device | |
US20240186457A1 (en) | Light emitting diode structure |