TW201016601A - Purification device of polysilicon powder - Google Patents

Abstract

The invention relates to a purification device of polysilicon powders, which includes a working furnace, a melting unit arranged in the working furnace, a collecting unit arranged below relative to the melting unit, and an evaporating unit arranged between the melting unit and the collecting unit. The melting unit includes a melting device arranged in an accommodating space. The collecting unit includes a collecting barrel arranged below relavtive to the melting device. The evaporating unit includes multiple evaporating plates interlacingly arranged in the accommodating space. The polysilicon powders become polysilicon fluid by the melting device and the polysilicon fluid rolls and moves on the evaporating plate of the evaporating unit because of the gravity force, so as to evaporate the impurities in the polysilicon fluid and may elevate the purity of the polysilicon fluid. The system is simple and may reduce manufacturing costs effectively, and may avoid using acidic gases; therefore it has fewer pollution to the environment.

Description

201016601 六、發明說明： 【發明所屬之技術領域】 特別是指一種多晶矽 電板最具代表性的原料 非晶矽，以及其他非矽 本發明是有關於一種純化裝置 粉的純化裝置。 【先前技術】 矽為目前通用之太陽能電池光 ，大致上可分為單晶矽、多晶矽、 材料。201016601 VI. Description of the invention: [Technical field to which the invention pertains] In particular, the most representative raw material of a polycrystalline silicon plate is amorphous bismuth, and other non-矽. The present invention relates to a purification device for a purification device powder. [Prior Art] 矽 is currently the general-purpose solar cell light, which can be roughly classified into single crystal germanium, polycrystalline germanium, and materials.

其中’單晶石夕是藉由柴氏長晶法（Cz〇chraisk〇製造而 成’主要是將石夕金屬原料炼融於掛禍中，然後將單晶碎的 矽種***矽融漿的液面，然後再緩慢地向上拉引，同時以 -定速率旋轉，藉此方式’即可提拉出一隻單晶矽棒。 由於單晶石夕的石夕純度高，因此以單晶梦之秒原料為太 陽能電池光電板具有較好的太陽能發電效益但是，以柴 氏長晶法所成型的單晶矽棒的斷面為圓形，在舖設太陽能 電池光電板時容易造成空間上的浪t，而且柴氏長晶法的 設備昂貴且製作速度緩慢，況且，在半導艘產業與太陽能 產業同時需高純度矽原料的情況下，造成單晶矽之矽原料 供不應求，導致單晶矽之矽原料的價格水漲船高。 相較之下，多晶矽對原料的選擇就有比較高的彈性， 因此多晶矽的原料成本遠低於單晶矽的原料成本，但是一 般冶金級多晶矽的純度只達99%，必需要再經過西門子製 程提咼純度，才可以應用於太陽能產業，而西門子製程則 包含了以下各個步驟： 201016601Among them, 'single crystal stone is made by Chai's crystal growth method (made by Cz〇chraisk〇), which is mainly used to smelt the stone material of Shishi into the disaster, and then insert the single crystal of the scorpion into the smelt. The liquid level is then pulled up slowly and simultaneously rotated at a constant rate. In this way, a single crystal 矽 rod can be pulled out. Because of the high purity of the single crystal stone, the single crystal dream The second raw material is solar cell photovoltaic panel has better solar power generation efficiency. However, the single crystal crucible rod formed by Chai's long crystal method has a circular cross section, which is easy to cause space waves when laying solar cell photovoltaic panels. t, and the equipment of Chai's long crystal method is expensive and the production speed is slow. Moreover, in the case where the semi-conductor industry and the solar energy industry require high-purity antimony raw materials at the same time, the raw materials of the single crystal crucible are in short supply, resulting in the monocrystalline crucible. The price of raw materials has risen. In contrast, polycrystalline germanium has a relatively high elasticity for the selection of raw materials. Therefore, the raw material cost of polycrystalline germanium is much lower than the raw material cost of single crystal germanium, but the purity of general metallurgical polycrystalline germanium is only 9 9% must be purified by the Siemens process before it can be applied to the solar industry, while the Siemens process includes the following steps: 201016601

1 ·鹽酸化：將冶金級的多晶矽置於流床反應器中，通 入鹽酸氣以形成三氣化石夕； 2.蒸餾：將低沸點的三氣化矽置於蒸餾塔中，將其他 不純物以蒸館方式去除之；以及 3_分解：將已蒸餾純化之三氣化矽置於化學氣相沈積 反應爐中，與氫氣還原反應而將固態多晶矽析出在 爐中電極上。 據上所述’西門子製程必需要使用流床反應器、蒸德 塔、化學氣相沈積反應爐等設備，導致西門子製程的製造 難度較高；再者，西門子製程所通入的鹽酸氣屬於污染物 質，對於環境的污染甚鉅，使用上不可不慎，因此，如何 同時提高太陽能的發電效率、降低太陽能發電的成本，又 可有效避免對環境的污染，儼然成為純化多晶矽之相關業 者亟欲達成的目標。 【發明内容】 因此，本發明之目的，即在提供一種可以有效降低耗 電成本’且污染物少又可以提升純化效率之多晶矽粉的純 化裝置。 於是，本發明多晶矽粉的純化裝置是包含一工作爐 叹置於該工作爐内的熔煉單元、一設置於該熔 對下方的收集單元，及一位於該熔煉單元與該收集 的蒸發單元。 '1 · Hydrochlorication: the metallurgical grade polycrystalline germanium is placed in a fluidized bed reactor, and hydrochloric acid gas is introduced to form a three-gas fossil; 2. Distillation: a low-boiling three-gas ruthenium is placed in a distillation column to remove other impurities. It is removed by steaming; and 3_ decomposition: the distilled and purified trigassene is placed in a chemical vapor deposition reactor, and the solid polycrystalline germanium is precipitated on the electrode in the furnace by hydrogen reduction reaction. According to the above, 'Siemen's process must use flow bed reactor, steamed tower, chemical vapor deposition reactor and other equipment, which makes the manufacturing process of Siemens difficult. In addition, the hydrochloric acid gas introduced by Siemens process belongs to pollution. Substance, the pollution to the environment is very large, and it must be used indiscriminately. Therefore, how to simultaneously improve the power generation efficiency of solar energy, reduce the cost of solar power generation, and effectively avoid environmental pollution, and become a related manufacturer of purified polysilicon. The goal. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a purification apparatus for polycrystalline tantalum powder which can effectively reduce the power consumption cost and which has less contaminants and can improve purification efficiency. Accordingly, the apparatus for purifying polycrystalline tantalum powder of the present invention comprises a melting unit in which the working furnace is placed in the working furnace, a collecting unit disposed below the melting pair, and an evaporation unit located in the melting unit and the collecting unit. '

該工作爐包括一中空狀爐體’及一可封閉該爐體的頂 其中，該爐體與該頂蓋界定出一容置空間，且該爐體 201016601 - 上形成有一連通該容置空間的抽氣通道。 該熔煉單元包括一設置於該容置空間内用以溶化多晶 矽粉的熔煉器，其中，該熔煉器具有一可承接多晶碎粉的 加熱面。該收集單元包括一設置於該熔煉器相對下方的收 集桶。 該蒸發單元包括多數片傾斜交錯設置於該容置空間内 且位於該熔煉器與該收集桶間的蒸發板，及多數分別鄰近 於每一蒸發板之一端的刮板’其中，每一蒸發板皆具有一 面向該熔煉器的蒸發面，及分別形成於該蒸發面兩相反側 的一起始侧緣與一落下側緣，每一起始側緣相對於該頂蓋 的垂直距離小於相對應之該落下側緣相對於該頂蓋的垂直 距離。 本發明之功效在於利用該熔煉單元的熔煉器熔化多晶 矽粉成為多晶矽液，利用重力使多晶矽液於該蒸發單元的 所述蒸發板上滾移，藉此蒸發多晶矽液中的雜質，提高多 晶矽液的純度，整體設備簡單能有效降低製造成本，而且 可以避免使用酸性氣體，進而減少污染環境的機率。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之三個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是’在以下的說 明内容中’類似的元件是以相同的編號來表示。 參閱圖1與圖2，本發明多晶矽粉的純化裝置丨適用於 201016601 純化多晶矽提升矽的純度，該純化裝置丨之第一較佳實施 例包含一工作爐2、一設置於該工作爐2内的熔煉單元3、 一設置於該熔煉單元3相對下方的收集單元4、一位於該熔 煉單元3與該收集單元4間的蒸發單元5、一鍍覆單元6、 一用以量測該工作爐2的工作溫度之溫度量測單元7、一用 以加熱該蒸發單元5的轉換器8，及一用以冷卻該工作爐2 的冷卻單元9。 該工作爐2包括一中空狀爐體21，及一可封閉該爐體 21的頂蓋22,其中，該爐體21與該頂蓋22界定出一容置 空間23，且該爐體21上形成有一連通該容置空間23的抽 氣通道24，及一與該抽氣通道24相間隔地連通該容置空間 23的觀測孔25。 該熔煉單元3包括一設置於該容置空間23内用以熔化 多晶矽粉100的熔煉器31，其中，該熔煉器31具有一底部 形成有一流出口 33的堝狀本體32、一形成於該本體32上 且可承接多晶矽粉100的加熱面34、一包覆於該本體32外 周緣的加熱片35、一可啟閉地蓋合於該本體32上的上蓋 36 6又置於該上蓋36外表面上的第一隔溫層37，及一設 置於該加熱片35外周緣的第二隔溫層38;而該第一、二隔 皿層37、38皆包括有相互連接的一鶴金屬板39及一鉬金 屬板30。 該收集單元4包括一設置於該熔煉器31的相對下方的 收集桶41，及一包覆該收集桶41外表面的保溫層42;該 保溫層42是以石墨所製成。 201016601 • 該蒸發單元5包括多數片傾斜交錯設置於該容置空間 、 23内且位於該熔煉器31與該收集桶41間的蒸發板51，及 多數分別鄰近於每一蒸發板51之一端的刮板52;其中，每 一蒸發板51皆具有一面向該熔煉器31的蒸發面511、分別 形成於該蒸發面511兩相反侧的一起始側緣512與一落下側 緣513,及多數形成於該蒸發面511上的細微導溝514;每 一起始側緣512相對於該頂蓋22的垂直距離小於相對應之 φ 落下侧緣513相對於該頂蓋22的垂直距離，而每一細微導 溝514皆是自該蒸發板51的起始側緣512朝該落下側緣 513延伸；而每一刮板52是可相對於相對應之蒸發板η的 蒸發面5U移動，藉此改變與相對應蒸發板51之蒸發面 511間的垂直距離，而改變每一到板52與相對應之蒸發板 51的蒸發面511間距離的方式，為熟悉該項技術者所能輕 易思及，故在此不予多加贅述。 於本較佳實施例中，該熔煉單元3的熔煉器31、該收 • 集單元4的收集桶41，及所述的蒸發板皆是以高純度 純度>99.999%)鎢金屬所製成，當然該熔煉器3ι '收集桶 41及蒸發板51也可以是其它耐溫材料所製成，例如：:墨 ’只要可以耐高溫（約2000t：)即可達成相同的功效，並 不應為本較佳實施例的揭露所囿限。 該鍍覆單元6包括一鍍覆於該熔煉器31之加熱面μ 上的第-鍍覆層61、一鍍覆於該收集桶41内表面的第二铲 覆層62’及多數分別鍍覆於每一蒸發板51之蒸發面5心 的第三鍍覆層63,其中，該鍍覆單元6的第一、二、= 201016601 覆層61、62、63可以是碳化矽或氮化矽，也可以是碳化矽 及氮化矽的混合物，以防止多晶矽粉1〇〇中的矽元素與熔 煉器31、收集桶41及蒸發板51發生物理/化學反應，影響 多晶石夕粉100純化的效果。 該溫度量測單元7包括一用以量測該熔煉器31及所述 蒸發板51溫度的鎢銶熱電偶溫度計71，及一透過該觀測孔 25觀測容置空間23溫度的紅外線測溫儀72。該轉換器8 是可以與市電電連接以將市電轉換為低電壓（45v)高電流 (4000A )，當本實施例使用時，是利用該轉換器8電連揍 市電，並將市電轉換為低電壓高電流，而用以加熱該溶煉 單元3之加熱片35與所述蒸發板51。而該冷卻單元9包括 一用以輸入冷卻液以冷卻該爐體21的冷卻液輸入管91，及 一供使用過之冷卻液流出的冷卻液流出管92，其中，利用 冷卻液流經冷卻液輸入管91與冷卻液流出管92以冷卻爐 體21的方式，為熟悉冷卻控制領域之人的所能輕易思及， 故在此不與多加費述。 純化多晶矽粉100時，是將純度達99 9%的多晶矽粉 1〇〇置於該熔煉器31中，並利用由羅茨泵（r〇〇tspump)及 擴散泵（diffusion pump )組成的真空泵（圖未示）連接該 抽氣通道24，然後啟動該真空泵，使該容置空間23維持在 ΙΟ-5托（Ton·)的真空狀態’接下來開啟該轉換器8以傳輸 電力，並用以加熱該加熱片35與每一蒸發板51，同時，利 用該溫度量測單元7持續量測該熔煉器31與每一蒸發板5ι 的溫度，此加熱期間應注意是，該熔煉器31是加熱至186〇 201016601 • 。卜_代之間，而每-蒸發板51則是加熱至ι漏。c ;當 該熔煉器31中的多晶石夕粉⑽被加熱到達140(rc時，則開 始溶融，而當其溫度升高到達刪。〇時，該等多晶石夕粉 100則熔化成多晶矽液100,自該熔煉器31的流出口 33流下 。於本較佳實施财，該真空泵由羅茨泉及擴散泵組成， 當然該真空泵也可以是由其他的泵所組成，並不應為本實 施的揭露所囿限。 φ #多晶石夕液1〇〇’流到最為鄰近該溶煉器31之蒸發板51 的蒸發面511時’恰可沿該蒸發板51上之導溝514且借助 重力，而自該蒸發板51的起始側緣512逐漸朝落下側緣 方向滾移，配合溫度高達⑽t的蒸發板51，使得多 晶石夕液刚’於該蒸發板51上的滾移時逐漸蒸發多晶石夕液 100,中的雜質（約log/秒），所蒸發的雜f則為該真空果帶 出該容置空間23，以維持該容置空間23的真空狀態。 多晶石夕液1〇〇,自最為鄰近該炫煉器31之蒸發板51的 φ ㈣側緣512 ’滾移至最接近該收集桶41之蒸發板51的落 下側緣513約滾移了 24〇〇mm，同時可蒸發雜冑胸以上 。再此需要特別值得-提的是，由於每―到板52可相對於 相對應之蒸發板51的起始側緣512移動，藉此改變與相對 應蒸發板51之蒸發面5 u間的垂直距離，用以控制多晶梦 液100’於蒸發面5ii上滾移時的厚度，藉此調節多晶石夕液 100的滾移速度’同時控制多晶發液中雜質的蒸發速度 ，也就是說，多晶矽液〗〇〇，滾移的厚度越薄雜質蒸發的速 度也就愈快。 10 201016601 _ · 發明人經由實驗得知，當多晶矽液100,滾移過所述的 蒸發板51，最後流入該收集單元4的收集桶41而被收集時 ，其純度由99.9%提升至99.99995。/。，由上述可知，該純化 裝置11設備簡單且耗電量少，每公斤矽料，僅消耗Μ度市 電，所以能有效降低矽純化的成本，且純化過程中無需使 用酸性氣體，對於環境的污染也較小。 參閱圖3，本發明多晶矽粉的純化裝置1之第二較佳實 ❹ 施例，大致上是與該第一較佳實施例相同，包含一工作爐2 、一熔煉單元3、一收集單元4、一蒸發單元5、一鍍覆單 元6、一溫度量測單元7、一轉換器8,及一冷卻單元9。 其中不相同之處在於：該純化裝^ i更包含—連續落料單 疋10，該連續落料單元1〇包括二設置於該容置空間中 且位於該料n 31上方的料斗u、二分職置於該頂蓋η 上的動力源12，及二根分別為該二動力源12所驅動且穿設 於該料斗11的落料螺桿13 ,而該熔煉器31的上蓋36上形 • 成有二個與所述落料螺桿13相對應的穿孔361。 當炼煉器31中的多晶石夕粉⑽開始溶煉且形成多晶 矽T 1〇0’並自該炫煉器31滴下後，可由該觀測孔25觀查 多明碎液⑽’滴下的量，適時啟動所述動力源12驅動相 對應的落料螺桿13轉動，進而帶動容置於該等料斗11内的 秦10G持續落人該溶煉器31内，補充該溶煉器μ 中二減少之多晶石夕粉1〇〇的量，使多晶石夕粉ι〇〇的純化作 業可=持續的更久並提升本發明多晶妙粉的純化裝置1每 的溶煉量’與上述第__較佳實施例相較，更可以減 201016601 少停機後再於熔煉器31 、㈠P缸古办 中添加多曰曰矽粉100所需破除真空 純加熱...等繁雜的程序，有效提高產量縮短 純化作業的時間。 再此需要特別說明的是，本實施例之連龍料單元10 :、"如上述’同時將該二料斗n中的多晶矽粉⑽補充至 贿煉器3】之外；利用所述動力源12各別驅動相對應的 洛枓螺桿u轉動，亦可使該二料斗u中的多晶矽粉叫The working furnace includes a hollow furnace body and a top portion of the furnace body, the furnace body and the top cover define an accommodating space, and the furnace body 201016601 - is formed with a communication space Pumping passage. The smelting unit comprises a smelter disposed in the accommodating space for melting polycrystalline cerium powder, wherein the smelting unit has a heating surface capable of receiving polycrystalline powder. The collection unit includes a collection bucket disposed opposite the smelter. The evaporating unit includes a plurality of evaporating plates which are obliquely disposed in the accommodating space and located between the smelting device and the collecting tub, and a plurality of squeegees respectively adjacent to one end of each of the evaporating plates, wherein each of the evaporating plates Each has an evaporation surface facing the melter, and a starting side edge and a falling side edge respectively formed on opposite sides of the evaporation surface, and the vertical distance of each of the starting side edges relative to the top cover is smaller than the corresponding one. The vertical distance of the falling side edge relative to the top cover. The effect of the invention is that the polycrystalline tantalum powder is melted into a polycrystalline liquid by the melting device of the melting unit, and the polycrystalline liquid is moved by the gravity on the evaporation plate of the evaporation unit, thereby evaporating impurities in the polycrystalline liquid and increasing the polycrystalline liquid. Purity, simple overall equipment can effectively reduce manufacturing costs, and can avoid the use of acid gases, thereby reducing the chance of environmental pollution. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the drawings. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 1 and FIG. 2, the apparatus for purifying polycrystalline tantalum powder of the present invention is suitable for purifying the purity of polycrystalline germanium in 201016601. The first preferred embodiment of the purification apparatus comprises a working furnace 2 disposed in the working furnace 2. a smelting unit 3, a collecting unit 4 disposed opposite the smelting unit 3, an evaporation unit 5 located between the smelting unit 3 and the collecting unit 4, a plating unit 6, and a measuring furnace A temperature measuring unit 7 for operating temperature of 2, a converter 8 for heating the evaporation unit 5, and a cooling unit 9 for cooling the working furnace 2. The working furnace 2 includes a hollow furnace body 21 and a top cover 22 that can close the furnace body 21. The furnace body 21 and the top cover 22 define an accommodating space 23, and the furnace body 21 is An air suction passage 24 communicating with the accommodating space 23 is formed, and an observation hole 25 communicating with the accommodating space 23 at a distance from the air suction passage 24 is formed. The smelting unit 3 includes a smelter 31 disposed in the accommodating space 23 for melting the polycrystalline silicon powder 100. The smelting unit 31 has a 本体-shaped body 32 having a first-stage outlet 33 formed at the bottom thereof, and a body formed on the body A heating surface 34 for receiving the polycrystalline silicon powder 100, a heating sheet 35 covering the outer periphery of the body 32, and an upper cover 36 6 which is openably and closably attached to the body 32 are disposed outside the upper cover 36. a first temperature barrier layer 37 on the surface, and a second temperature barrier layer 38 disposed on the outer periphery of the heater chip 35; and the first and second separator layers 37, 38 each include a crane metal plate connected to each other 39 and a molybdenum metal plate 30. The collecting unit 4 includes a collecting tub 41 disposed opposite the smelting unit 31, and an insulating layer 42 covering the outer surface of the collecting tub 41. The insulating layer 42 is made of graphite. 201016601: The evaporation unit 5 includes a plurality of sheets of evaporation plates 51 which are obliquely arranged in the accommodating space 23 and located between the smelting unit 31 and the collecting barrel 41, and are respectively adjacent to one end of each of the evaporation plates 51. The squeegee 52; wherein each of the evaporation plates 51 has an evaporation surface 511 facing the smelter 31, a starting side edge 512 and a falling side edge 513 respectively formed on opposite sides of the evaporation surface 511, and most of the formation a fine guide groove 514 on the evaporation surface 511; a vertical distance of each of the starting side edges 512 relative to the top cover 22 is smaller than a vertical distance of the corresponding φ drop side edge 513 relative to the top cover 22, and each subtle The guide grooves 514 are all extended from the starting side edge 512 of the evaporation plate 51 toward the falling side edge 513; and each of the squeegees 52 is movable relative to the evaporation surface 5U of the corresponding evaporation plate η, thereby changing Corresponding to the vertical distance between the evaporation faces 511 of the evaporation plate 51, the manner of changing the distance between each plate 52 and the evaporation surface 511 of the corresponding evaporation plate 51 is easily understood by those skilled in the art. I will not repeat them here. In the preferred embodiment, the smelting unit 31 of the smelting unit 3, the collecting barrel 41 of the collecting unit 4, and the evaporation plate are all made of high purity purity >99.999%) tungsten metal. Of course, the smelter 3 ι 'collection drum 41 and the evaporation plate 51 may also be made of other temperature-resistant materials, for example: ink 'as long as it can withstand high temperature (about 2000t:) can achieve the same effect, should not be The disclosure of the preferred embodiment is limited. The plating unit 6 includes a first plating layer 61 plated on the heating surface μ of the smelting unit 31, a second shovel layer 62 ′ plated on the inner surface of the collecting barrel 41, and a plurality of plating layers respectively. a third plating layer 63 on the evaporation surface 5 of each evaporation plate 51, wherein the first, second, = 201016601 cladding layers 61, 62, 63 of the plating unit 6 may be tantalum carbide or tantalum nitride. It may also be a mixture of tantalum carbide and tantalum nitride to prevent the physical/chemical reaction of the tantalum element in the polycrystalline tantalum powder 1 with the melter 31, the collecting tank 41 and the evaporation plate 51, and affect the purification of the polycrystalline stone powder 100. effect. The temperature measuring unit 7 includes a tungsten-rhenium thermocouple thermometer 71 for measuring the temperature of the melter 31 and the evaporation plate 51, and an infrared thermometer 72 for observing the temperature of the accommodating space 23 through the observation hole 25. . The converter 8 is connectable with the mains to convert the mains into a low voltage (45v) high current (4000A). When used in this embodiment, the converter 8 is used to electrically connect the mains and convert the mains to low. The voltage is high, and the heating sheet 35 for heating the melting unit 3 and the evaporation plate 51 are heated. The cooling unit 9 includes a coolant inlet pipe 91 for inputting a cooling liquid to cool the furnace body 21, and a coolant outflow pipe 92 for discharging the used coolant, wherein the coolant flows through the coolant The manner in which the input pipe 91 and the coolant outflow pipe 92 are used to cool the furnace body 21 can be easily considered by those skilled in the art of cooling control, and therefore, it is not mentioned here. When the polycrystalline tantalum powder 100 is purified, a polycrystalline tantalum powder having a purity of 99 9% is placed in the melter 31, and a vacuum pump composed of a rhodes pump and a diffusion pump is used. The pumping passage 24 is connected, and then the vacuum pump is started to maintain the accommodating space 23 in a vacuum state of ΙΟ-5 Torr (Ton·). Then the converter 8 is turned on to transmit power and used for heating. The heating sheet 35 and each of the evaporation plates 51 are simultaneously measured by the temperature measuring unit 7 for the temperature of the melting unit 31 and each of the evaporation plates 51. During the heating, it should be noted that the melting unit 31 is heated to 186〇201016601 • . Between the generations, and each of the evaporation plates 51 is heated to the drain. c; when the polycrystalline powder (10) in the smelter 31 is heated to reach 140 (rc, the melting begins, and when the temperature rises to reach 〇, the polycrystalline powder 100 is melted into The polycrystalline sputum 100 flows down from the outflow port 33 of the smelter 31. In the preferred embodiment, the vacuum pump is composed of a Roots spring and a diffusion pump. Of course, the vacuum pump may also be composed of other pumps, and should not be The disclosure of the present invention is limited to φ # polycrystalline lithium 1 〇〇 'flow to the evaporation surface 511 of the evaporation plate 51 closest to the smelter 31 'just along the guide groove 514 on the evaporation plate 51 And by gravity, the starting side edge 512 of the evaporation plate 51 gradually rolls toward the falling side edge direction, and the evaporation plate 51 having a temperature of up to (10) t is engaged, so that the polycrystalline stone liquid just rolls on the evaporation plate 51. When moving, the impurities in the polycrystalline stone liquid 100 are gradually evaporated (about log/second), and the evaporated impurities f are taken out from the accommodating space 23 to maintain the vacuum state of the accommodating space 23. The polycrystalline stone liquid is 1 〇〇, and is rolled from the φ (four) side edge 512 ' of the evaporation plate 51 closest to the smelter 31 to the most The falling side edge 513 of the evaporation plate 51 of the collecting tub 41 is rolled about 24 〇〇mm, and at the same time, the hybrid chest can be evaporated. Further, it is particularly worthwhile to mention that each of the plates 52 can be opposed to The corresponding starting side edge 512 of the corresponding evaporation plate 51 is moved, thereby changing the vertical distance from the evaporation surface 5 u of the corresponding evaporation plate 51 for controlling the rolling of the polycrystalline dream liquid 100' on the evaporation surface 5ii. The thickness, thereby adjusting the roll speed of the polycrystalline stone liquid 100' while controlling the evaporation rate of impurities in the polycrystalline hair liquid, that is, the polycrystalline liquid 〇〇, the thinner the thickness of the roll, the evaporation rate of the impurities 10 201016601 _ · The inventors have learned through experiments that when the polycrystalline sputum 100 is rolled over the evaporation plate 51 and finally flows into the collection tank 41 of the collection unit 4 and is collected, its purity is 99.9%. It is raised to 99.99995. As can be seen from the above, the purification device 11 has simple equipment and low power consumption, and consumes only a kilowatt of electricity per kilogram of tanning material, so the cost of purification can be effectively reduced, and acidity is not required in the purification process. Gas, the pollution of the environment is also better Referring to Fig. 3, a second preferred embodiment of the apparatus for purifying polycrystalline tantalum powder of the present invention is substantially the same as the first preferred embodiment, and comprises a working furnace 2, a melting unit 3, and a collecting unit. 4. An evaporation unit 5, a plating unit 6, a temperature measuring unit 7, a converter 8, and a cooling unit 9. The difference is that the purification unit further comprises a continuous blanking list.连续10, the continuous blanking unit 1〇 includes two hoppers u disposed in the accommodating space and located above the material n 31, and a power source 12 disposed on the top cover η, and the two are respectively The second power source 12 is driven and disposed through the blanking screw 13 of the hopper 11, and the upper cover 36 of the melter 31 is formed with two through holes 361 corresponding to the blanking screw 13. When the polycrystalline powder (10) in the refiner 31 starts to be lyzed and polycrystalline 矽T 1〇0' is formed and dropped from the smelter 31, the amount of the scum (10)' dripping can be observed from the observation hole 25. The power source 12 is driven to drive the corresponding blanking screw 13 to rotate, and then the Qin 10G accommodated in the hopper 11 is continuously dropped into the smelter 31 to supplement the smelter μ. The amount of the polycrystalline stone powder is 1 ,, so that the purification operation of the polycrystalline stone 〇〇 可 can be continued for a longer period of time and enhance the amount of the smelting amount of the purification device 1 of the present invention. Compared with the preferred embodiment, the __ preferred embodiment can reduce the number of procedures such as vacuum vacuum heating, etc., which is required to reduce the amount of powder 100 in the smelter 31 and (1) P-cylinder. Increase production and shorten the time for purification operations. In addition, it should be particularly noted that the continuous dragon unit 10 of the present embodiment: "and the above" simultaneously adds the polycrystalline tantalum powder (10) in the two hopper n to the bribe 3; using the power source 12 each drive corresponding to the rotation of the Luojing screw u, can also make the polycrystalline powder in the two hopper u

別補充至贿煉器31内，—樣可以達成增加本發明多晶石夕 粉的純化裝置1每一批次之熔煉量的效果。 參閲圖4、5,本發明多晶石夕粉的純化裝置1之第三較 佳實施例，大致上是與該第二較佳實施例相同包含一工 作爐2 —熔煉單元3、—收集單元4 一蒸發單元5、一 鍍覆單元6、一溫度量測單元7、—轉換胃8、一冷卻單元 9 ’及一連續落料單元1〇。其中不相同之處在於：該純化裝 置1更包含一區隔單元2〇，且該熔煉單元3的熔煉器31是 具有一板狀本體32,該區隔單元2〇包括一設置於該板狀本 體32與所述料斗η間且形成有二個落料口 2〇2的第一區隔 件201、一與該第一區隔件2〇1相配合的第二區隔件2〇3， 及二個用以啟閉每一落料口 202的控制件204。 該第一區隔件201將該容置空間23區隔成相間隔的一 第一容置部231與一第二容置部232，而該第二區隔件203 是設置於該第二容置部232中，並將該第二容置部232區 隔成二個相互獨立的封閉區233。所述料斗11是分別設置 於每一封閉區233中，該熔煉器31的板狀本體32與所述 12It is not necessary to add it to the bribe 31, so that the effect of increasing the amount of smelting per batch of the purification apparatus 1 of the polycrystalline powder of the present invention can be achieved. Referring to Figures 4 and 5, a third preferred embodiment of the apparatus for purifying polycrystalline spine powder of the present invention substantially comprises a working furnace 2, a melting unit 3, as in the second preferred embodiment. The unit 4 is an evaporation unit 5, a plating unit 6, a temperature measuring unit 7, a conversion stomach 8, a cooling unit 9', and a continuous blanking unit 1A. The difference is that the purification device 1 further includes a compartment unit 2, and the smelter 31 of the smelting unit 3 has a plate-shaped body 32, and the compartment unit 2 includes a plate-like body. a first partition 201 between the body 32 and the hopper n and having two drop openings 2〇2, and a second partition 2〇3 matching the first partition 2〇1, And two control members 204 for opening and closing each of the blanking ports 202. The first partitioning member 201 partitions the accommodating space 23 into a first accommodating portion 231 and a second accommodating portion 232, and the second partitioning member 203 is disposed on the second accommodating portion 203. The second portion 232 is partitioned into two mutually independent closed regions 233. The hoppers 11 are respectively disposed in each of the closed areas 233, and the plate-like body 32 of the smelter 31 and the 12

Γ V 201016601 ·- · 蒸發板51及該收集單元4的收集桶41則是位於該第一容 置部231中，該抽氣通道24是連通該第一容置部231。該 第一區隔件201的所述落料口 202是位於相對應之料斗u 下方且連通每一封閉區233與第一容置部231。而該工作爐 2的爐體21更形成有二個連通每一封閉區233且連接有真 空泵（圖未示）的通道26。 進行純化作業時，是先將該熔煉器31的板狀本體32 • 加熱至186〇t：〜1900<t之間，當該板狀本體32加熱至設定 溫度後，再開啟任一料斗u下方的控制件2〇4，同時啟動 相對該料斗11之落料螺桿13，使該料斗u中的多晶矽粉 1〇〇經該落料口 202而落至該熔煉器31的板狀本體Μ上， 其中’落料螺桿13的轉動速度是用以控制多晶石夕粉ι〇〇落 至該熔煉器31的板狀本體32上的速度，且由於多晶石夕粉 100是逐漸落料至該熔煉胃31上，所以溶煉㈣31的溫度可 以確實傳達至多晶矽粉1〇0上’使該板狀本體32上多晶矽 • #⑽迅速溶化呈液狀，依序流經每-蒸發板51進行如第 一較佳實施例所述的純化作業。 當該料斗U的多晶石夕粉1〇〇完全落完時，則利用控制 件204封閉該料斗u下方落料口 2Q2，並令另—料斗u 始接續落料以持續進行純化作業，同時，對已落完料之料 斗11進行補充多晶矽粉100的作業。 於每封閉區233是相互獨立，所以對已落完料之 該料斗U補充多⑲粉⑽的作業，並不會影響到落料中 之另—料斗U的真空度’而且補充多晶料⑽的作業進 13 201016601 ^件2 ^下方的落料〇202以為相對應的 所封閉’所以，補充多晶妙粉⑽的作業進行 時“第-容置冑231的真空度仍得以維持亦使第一容置 中的純化作業得以持續進行，而且，每一封閉區叫 的工間小於該第二容置冑232 ’且更遠小於該第一容置部 231的空間，所以在補料完成後，可以有效縮短每-封閉區 233形成所需真空度的所需時間。藉此，使多晶梦粉⑽得 已連續落料’與前述兩較佳實施例相較，本較佳實施例多 晶石夕粉1〇〇得以連續落料直到純化作業結束，亦即在填滿 該收集桶41前，該第—容置部231不需經歷多次破除真空 冷部、抽真空’加熱…等繁雜的程序，更能有效提高產量 縮短純化作業的時間。Γ V 201016601 ·- · The evaporation plate 51 and the collection tank 41 of the collection unit 4 are located in the first accommodating portion 231, and the suction passage 24 communicates with the first accommodating portion 231. The drop opening 202 of the first partition member 201 is located below the corresponding hopper u and communicates each of the closed area 233 and the first receiving portion 231. The furnace body 21 of the working furnace 2 is further formed with two passages 26 communicating with each of the closed zones 233 and connected to a vacuum pump (not shown). When the purification operation is performed, the plate-shaped body 32 of the melter 31 is first heated to between 186 〇t: 1900 and 1900; when the plate-shaped body 32 is heated to the set temperature, then any hopper u is opened. The control member 2〇4 simultaneously starts the blanking screw 13 of the hopper 11 so that the polycrystalline silicon powder 1 in the hopper u passes through the blanking port 202 and falls onto the plate-like body 该 of the smelting device 31. Wherein the rotational speed of the blanking screw 13 is used to control the speed at which the polycrystalline stone powder falls onto the plate-like body 32 of the melter 31, and since the polycrystalline powder 100 is gradually dropped to the The stomach 31 is smelted, so that the temperature of the smelting (4) 31 can be surely transmitted to the polycrystalline strontium powder 1 〇 0. The polycrystalline cerium on the plate-like body 32 is rapidly melted into a liquid state, and sequentially flows through each of the evaporation plates 51. The purification operation described in the first preferred embodiment. When the polycrystalline powder of the hopper U is completely discharged, the control unit 204 is used to close the blanking port 2Q2 of the hopper u, and the other hopper u is continuously connected to continue the purification operation. The operation of replenishing the polycrystalline silicon powder 100 to the hopper 11 that has been finished is performed. Each of the closed areas 233 is independent of each other, so the operation of replenishing the hopper U with more than 19 powders (10) does not affect the vacuum degree of the other hopper U in the blanking material and supplements the polycrystalline material (10). The work into 13 201016601 ^ piece 2 ^ below the blanking block 202 is considered to be the corresponding closed 'So, when the operation of the polycrystalline powder (10) is added, the vacuum of the first-capacitor 231 is maintained. An accommodating purification operation is continued, and each closed area is called a work space smaller than the second accommodating 胄 232 ′ and is farther than the space of the first accommodating portion 231 , so after the feeding is completed The time required to form the required degree of vacuum per closed area 233 can be effectively shortened. Thereby, the polycrystalline dream powder (10) has been continuously blanked as compared with the two preferred embodiments described above, and the preferred embodiment is more The spar powder 1 〇〇 can be continuously blanked until the end of the purification operation, that is, before filling the collection tank 41, the first accommodating portion 231 does not need to undergo multiple vacuum evacuation, vacuuming, heating, etc. Complicated procedures can effectively increase production and shorten the time of purification operations .

綜上所述，本發明多騎粉的純化m用該溶練 早兀3的溶煉器31溶化多晶石夕粉1〇〇成為多晶石夕液⑽，， 配合溫度高達17_的蒸發板51，使得多晶料⑽，於該 蒸發板51上滾移時可逐漸蒸發多晶碎液！⑽，中的雜質提 高多晶㈣⑽，的純度，並有效降低製造成本，而且純化 過程中並未使㈣性氣體，對於環境的污染也較小，故確 實能達成本發明之目的。 淮以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發日月實施之_，即A凡依本發明中請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 脣本發明專利涵蓋之範圍内。 【圖式簡單說明】 14 201016601 圖1是一剖視圖，說明本發明多晶石夕粉的純化装置之 第—較佳實施例； 圖2是一放大圖，說明每一蒸發板上的導溝； 圖3是一剖視圖，說明本發明多晶矽粉的純化裝置之 第二較佳實施例； 圖4是一俯視圖’說明本發明多晶矽粉的純化裝置之 第三較佳實施例；及 圖5是一剖視圖’說明圖4中v_v剖面線的剖視態樣 m 15 201016601 【主要元件符號說明】In summary, the purification m of the multi-riding powder of the present invention dissolves the polycrystalline stone powder into the polycrystalline stone liquid (10) by using the smelter 31 of the scouring early 兀3, and the evaporation temperature is as high as 17 _. The plate 51 is such that the polycrystalline material (10) gradually evaporates the polycrystalline liquid when it is rolled on the evaporation plate 51! (10), the impurities in the polycrystal (4) (10) are improved in purity, and the manufacturing cost is effectively reduced, and the (four) gas is not contaminated in the purification process, so that the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and cannot be limited to the implementation of the present invention, that is, the simple equivalent of the patent scope and the description of the invention in the present invention. Changes and modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a first preferred embodiment of a purification device for polycrystalline whiskers of the present invention; FIG. 2 is an enlarged view showing a guide groove on each evaporation plate; Figure 3 is a cross-sectional view showing a second preferred embodiment of the apparatus for purifying polycrystalline tantalum powder of the present invention; Figure 4 is a plan view showing a third preferred embodiment of the apparatus for purifying polycrystalline tantalum powder of the present invention; and Figure 5 is a cross-sectional view 'Description of the cross-sectional view of the v_v hatching in Fig. 4 m 15 201016601 [Description of main component symbols]

1 …… …純化裝置 3 3 X ♦ * *' …流出口 1 i K ❖ * ( …連續落料單元 & 4 Κ Φ « •…加熱面 11 X ·(· X » X · •…料斗 3 5…… …·加熱片 12 * x … •…動力源 3 6""* •…上蓋 13 …* •…落料螺桿 361… •…穿孔 *♦»***： …·工作爐 3 7 * * * * * …·第一隔溫層 20"*' …·區隔單元 3 8"** •…第二隔溫層 201 - •…第一區隔件 3 9 ^ s * —鶴金屬板 202… •…落料口 —翻金屬板 203… •…第二區隔件 4…… •…收集單元 204… •…控制件 41 .… •…收集桶 21"*** •…爐體 * « » * 4 …·保溫層 2 2 “ … …·頂蓋 5…… …蒸發單元 «««>»* •…容置空間 ^5 ^ « β * β « •…蒸發板 231 ·· •…第一容置部 511… •…蒸發面 232… •…第二容置部 512… •…起始側緣 233… …·封閉區 5 13… …·落下側緣 * « * » « —抽氣通道 514… —導溝 2 5 ”… …·觀測孔 5 * * » * » •…刮板 26"*'. …·通道 6 …鍛覆單元 »««* »>« •…熔煉單元 61""* •…第一鍍覆層 3 1 tt <· * » α . •…熔煉器 6 2 " * *s …·第二鑛覆層 32**"* •…本體 ♦ * ♦ * ♦ •…第三鑛覆層 16 201016601 7 * …溫度量測單元 · S » * · 9 …·冷卻單元 71··' …鎢銖熱電偶溫度 91 . -. •…冷卻液輸入管 計 « « e » κ •…冷卻液流出管 7 2 " “ … …紅外線測溫儀 100 …多晶矽粉 8 « K « K · » .....轉換器 100, · —多晶石夕液1 ...... ...purification device 3 3 X ♦ * *' ...flow outlet 1 i K ❖ * (...continuous blanking unit & 4 Κ Φ « •...heating surface 11 X ·(· X » X · •... hopper 3 5...... ...·热片12 * x ... •...Power source 3 6""* •...Upper cover 13 ...* •... Blanking screw 361... •...Perforated*♦»***: ...·Working stove 3 7 * * * * * ...· first temperature barrier 20"*' ...·dividing unit 3 8"** •...second temperature barrier 201 - •...first compartment 3 9 ^ s * — crane metal Plate 202... •...Dropping port—turning metal plate 203... •...Second zone partition 4... •...collection unit 204... •...control member 41 .... •...collection bin 21"*** •...furnace * « » * 4 ...·Insulation 2 2 "...·Top cover 5... Evaporation unit «««>»* •... accommodation space ^5 ^ « β * β « •... evaporation plate 231 ·· • The first housing 511... • The evaporation surface 232... • The second housing 512... • The starting side edge 233... The closed area 5 13... The falling side edge* « * » « — Pumping passage 514... - Guide groove 2 5 ”...·observation hole 5 * * » * » •... Scraper 26"*'. ...·Channel 6 ...Forging unit»««* »>« •...Smelting unit 61""* •...first Plating layer 3 1 tt <· * » α . •...Smelter 6 2 " * *s ...·Second mine cover 32**"* •...body ♦ * ♦ * ♦ •...third mine Cladding 16 201016601 7 * ...temperature measuring unit · S » * · 9 ...·cooling unit 71··' ...tungsten thermocouple temperature 91 . -. •... coolant input pipe gauge « « e » κ •...cooling Liquid outflow tube 7 2 " "Infrared thermometer 100 ... polycrystalline tantalum powder 8 « K « K · » ..... converter 100, · — polycrystalline shi

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Claims (1)

201016601 .-七、申請專利範圍： 1· 一種多晶矽粉的純化裝置，適用於提升多晶矽粉的矽純 度，該純化裝置包含： 一工作爐，包括一中空狀爐體，及一可封閉該爐體 的頂蓋，其中，該爐體與該頂蓋界定出一容置空間，且 該爐體上形成有一連通該容置空間的抽氣通道； 一熔煉單元，包括一設置於該容置空間内用以熔化 • 多晶矽粉的熔煉器，其中，該熔煉器具有一可承接多晶 碎粉的加熱面； 一收集單元，包括一設置於該熔煉器相對下方的收 集桶；及 一蒸發單元，包括多數片傾斜交錯設置於該容置空 間内且位於該熔煉器與該收集桶間的蒸發板，及多數分 別鄰近於每一蒸發板之一端的刮板，其中，每一蒸發板 皆具有一面向該熔煉器的蒸發面，及分別形成於該蒸發 . 面兩相反側的一起始側緣與一落下側緣，每一起始侧緣 相對於該頂蓋的垂直距離小於相對應之落下側緣相對於 該頂蓋的垂直距離。 2·依據申請專利範圍第1項所述之多晶矽粉的純化裝置， 其中’每一蒸發板更具有多數形成於該蒸發面上的細微 導溝’每一細微導溝皆是自該蒸發板的起始側緣朝該落 下侧緣延伸，且每一刮板是可相對於相對應之蒸發板的 蒸發面移動。 .依據申請專利範圍第2項所述之多晶矽粉的純化裝置， 18 201016601 更包含一鍍覆單元，而該熔煉單元的熔煉器、該收集單 元的收集桶’及所述的蒸發板皆是以鎢金屬所製成而 該鍍覆單元包括一鍍覆於該熔煉器之加熱面上的第一鍍 覆層、一鍍覆於該收集桶内表面的第二鍍覆層，及多數 分別鏟覆於每一蒸發板之蒸發面上的第三鍍覆層，其中 ，該鍍覆單元的第一、二、三鍍覆層是選自於下列所構 成之群組：碳化妙或氮化石夕。 4. 依據申請專利範圍第2項所述之多晶矽粉的純化裝置， 春 其中，該熔煉單元的熔煉器、該收集單元的收集桶，及 所述的蒸發板皆是以石墨所製成。 5. 依據申請專利範圍第3項所述之多晶矽粉的純化裝置， 其中，該收集單元更包括一包覆該收集桶外表面的保溫 層’該保溫層是以石墨所製成。 6. 依據申請專利範圍第5項所述之多晶矽粉的純化裴置， 更包含一用以量測該工作爐溫度的溫度量侧單元，而且 該工作爐的爐體形成有一連通該容置空間的觀測孔，而 ’ 該溫度量側單元包括—用以量測該料^及所述蒸發板 狐度的鎢銖熱電偶溫度計，及一透過該觀測孔觀測容置 空間溫度的紅外線測溫儀。 7. 依據申請專利範圍第6項所述之多晶矽粉的純化裝置， 其中，該熔煉單元的熔煉器具有一底部形成有一流出口 的堝狀本體、一包覆於該本體外周緣的加熱片、一可啟 閉地蓋合於該本體上的上蓋、一設置於該上蓋外表面上 的第一隔溫層，及一設置於該加熱片外周緣的第二隔溫 19 201016601 層，其中，該本體、加熱片，及上蓋皆是以鎢金屬所製 成，而該第一鍍覆層是鍍覆於該堝狀本體可承接多晶矽 粉的加熱面上，該第一、二隔溫層皆包括相互連接的一 鎢金屬板及一鉬金屬板，而該溫度量側單元的鎢銖熱電 偶溫度計是用於量測該堝狀本體的溫度該流出口是位 於最鄰近蒸發板之起始側緣的上方。 8·依據申請專利範圍第7項所述之多晶矽粉的純化裝置， φ 更包含一用以加熱該熔煉單元之加熱片與所述蒸發板的 轉換器，該轉換器是與市電電連接以將市電轉換為低電 壓高電流。 9.依據申請專利範圍第8項所述之多晶矽粉的純化裝置， 更包含一連續落料單元，該連績落料單元包括至少一設 置於该容置空間中且位於該熔煉器之本體上方的料斗、 一設置於該頂蓋上的動力源，及一為該動力源所驅動且 穿设於該料斗的落料螺桿，而該溶煉器的上蓋上形成有 一與該落料螺桿相對應的穿孔。 1 〇.依據申請專利範圍第6項所述之多晶矽粉的純化裝置， 該熔煉單元的熔煉器包括一傾斜設置的板狀本體，該加 熱面疋形成於該板狀本體上’該本體是以鎢金屬所製成 ’而該溫度量侧單元的鎢銖熱電偶溫度計是用於量測該 板狀本體與所述蒸發板的溫度。 11.依據申請專利範圍第1 〇項所述之多晶石夕粉的純化裝置， 更包含一設置於該容置空間中的連續落料單元，該連續 落料單元包括多數設置於該容置空間中且位於該熔煉器 20 201016601 、· 之本體上方的料斗、之 多數與每一料斗對應設置於該頂蓋 上的動力源，及多丄 數為該動力源所驅動且穿設於相對應 之料斗的落料螺桿。 12.依據申請專利範圍第 β乐U項所述之多晶矽粉的純化裝置， 更匕含區隔單凡，該區隔單元包括-設置於該板狀本 體與所述料斗間且形成有多數個落料π的第-區隔件、 一用以區隔所述料斗的第：區隔件，及多數可被控制地 啟閉所述落料Π的控制件，其中，該第—區隔件將該容 置空間區隔成相間隔的一第一容置部與一第二容置部， 而該第二區隔件則將該第二容置部區隔成多數個相互獨 立的封閉區，該連續落料單元的所述料斗是分別設置於 每封閉區中，而每一落料口是位於相對應之料斗下方 且連通每一封閉區與該第一容置部，而該熔煉器的板狀 本體與所述蒸發板及該收集單元的收集桶則是位於該第 一容置部中，該工作爐的爐體則更形成有多數連通每一 封閉區的通道，該工作爐的抽氣通道是連通該第一容置 部。 13.依據申請專利範圍第12項所述之多晶矽粉的純化裝置， 更包含一用以加熱該熔煉單元之本體與所述蒸發板的轉 換器，該轉換器是與市電電連接以將市電轉換為低電壓 rfj電流。201016601 .-VII. Patent application scope: 1. A purification device for polycrystalline tantalum powder, suitable for improving the purity of polycrystalline tantalum powder. The purification device comprises: a working furnace comprising a hollow furnace body, and a furnace body can be closed The top cover, wherein the furnace body and the top cover define an accommodating space, and the furnace body is formed with an air suction passage communicating with the accommodating space; a smelting unit includes a accommodating space disposed in the accommodating space a melting device for melting polycrystalline tantalum powder, wherein the melting device has a heating surface capable of receiving polycrystalline powder; a collecting unit comprising a collecting barrel disposed opposite the melting unit; and an evaporation unit, including a plurality of sheets are obliquely staggered in the accommodating space and located in the evaporation plate between the smelting device and the collecting barrel, and a plurality of squeegees respectively adjacent to one end of each of the evaporation plates, wherein each of the evaporation plates has a face An evaporation surface of the smelter, and a starting side edge and a falling side edge respectively formed on opposite sides of the evaporation surface, and a vertical distance of each of the starting side edges relative to the top cover Corresponding to the free fall distance from the side edges of the cap with respect to the vertical. 2. The apparatus for purifying polycrystalline tantalum powder according to claim 1, wherein each of the evaporation plates further has a plurality of fine guide grooves formed on the evaporation surface. Each of the fine guide grooves is from the evaporation plate. The starting side edges extend toward the falling side edges, and each of the squeegees is movable relative to the evaporation surface of the corresponding evaporation plate. According to the purification device of the polycrystalline silicon powder described in claim 2, 18 201016601 further comprises a plating unit, and the melting unit of the melting unit, the collecting barrel of the collecting unit and the evaporation plate are The plated unit comprises a first plating layer plated on the heating surface of the smelting device, a second plating layer plated on the inner surface of the collecting barrel, and most of the shovel a third plating layer on the evaporation surface of each evaporation plate, wherein the first, second, and third plating layers of the plating unit are selected from the group consisting of carbonization or nitriding. 4. The apparatus for purifying polycrystalline tantalum powder according to claim 2, wherein the melting unit of the melting unit, the collecting barrel of the collecting unit, and the evaporation plate are all made of graphite. 5. The apparatus for purifying polycrystalline tantalum powder according to claim 3, wherein the collecting unit further comprises an insulating layer covering the outer surface of the collecting barrel. The insulating layer is made of graphite. 6. The purification device of the polycrystalline silicon powder according to claim 5, further comprising a temperature amount side unit for measuring the temperature of the working furnace, and the furnace body of the working furnace is formed with a communication connection a viewing aperture of the space, and the 'temperature side unit includes a tungsten-rhenium thermocouple thermometer for measuring the material and the evaporation degree of the evaporation plate, and an infrared temperature measurement for observing the temperature of the accommodation space through the observation hole instrument. 7. The apparatus for purifying polycrystalline tantalum powder according to claim 6, wherein the smelting unit has a crucible body having a first-class outlet formed at the bottom, a heating sheet coated on the outer periphery of the body, and a heating sheet. An upper cover that is openably closed to the body, a first temperature barrier layer disposed on an outer surface of the upper cover, and a second temperature isolation layer 19 201016601 disposed on an outer circumference of the heating chip, wherein the body The heating sheet and the upper cover are all made of tungsten metal, and the first plating layer is plated on the heating surface of the crucible body for receiving the polycrystalline silicon powder, and the first and second temperature insulation layers each include a tungsten metal plate and a molybdenum metal plate are connected, and the tungsten-rhodium thermocouple thermometer of the temperature side unit is used for measuring the temperature of the body, and the outlet is located at the starting side edge of the nearest evaporation plate. Above. 8. The purification device for polycrystalline tantalum powder according to claim 7, wherein φ further comprises a converter for heating the heating sheet of the melting unit and the evaporation plate, the converter being connected to the mains to be The mains is converted to low voltage and high current. 9. The apparatus for purifying polycrystalline tantalum powder according to claim 8, further comprising a continuous blanking unit, wherein the continuous blanking unit comprises at least one disposed in the accommodating space and located above the body of the smelter a hopper, a power source disposed on the top cover, and a blanking screw driven by the power source and disposed in the hopper, and the upper cover of the smelter is formed with a blanking screw Perforation. 1 . The purification device of the polycrystalline silicon powder according to claim 6, wherein the melting unit comprises a slanted plate-shaped body, and the heating surface is formed on the plate-shaped body. The tungsten-rhenium thermocouple thermometer of the temperature-measuring side unit is used to measure the temperature of the plate-like body and the evaporation plate. 11. The apparatus for purifying polycrystalline stone powder according to claim 1 , further comprising a continuous blanking unit disposed in the accommodating space, wherein the continuous blanking unit comprises a plurality of accommodating units. a plurality of hoppers in the space above the body of the smelter 20 201016601, and a power source corresponding to each hopper corresponding to each of the hoppers, and a plurality of turns are driven by the power source and are correspondingly disposed The blanking screw of the hopper. 12. The apparatus for purifying polycrystalline tantalum powder according to the patent application scope of the invention, wherein the partitioning unit comprises: disposed between the plate-shaped body and the hopper and formed with a plurality of a first partition for blanking π, a first partition for partitioning the hopper, and a plurality of control members for controllably opening and closing the blanking stack, wherein the first partition Separating the accommodating space into a first accommodating portion and a second accommodating portion which are spaced apart from each other, and the second accommodating portion partitions the second accommodating portion into a plurality of mutually independent closed regions The hopper of the continuous blanking unit is respectively disposed in each closed zone, and each of the blanking openings is located under the corresponding hopper and communicates each closed zone with the first accommodating part, and the smelting device The plate-shaped body and the evaporation plate and the collecting barrel of the collecting unit are located in the first receiving portion, and the furnace body of the working furnace is further formed with a plurality of passages connecting each closed area, the working furnace The air suction passage is connected to the first receiving portion. 13. The apparatus for purifying polycrystalline tantalum powder according to claim 12, further comprising a converter for heating the body of the melting unit and the evaporation plate, the converter being connected to the mains to convert the commercial power For low voltage rfj current. 21twenty one