CN203529941U - Heating purifying device - Google Patents
Heating purifying device Download PDFInfo
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- CN203529941U CN203529941U CN201320630392.0U CN201320630392U CN203529941U CN 203529941 U CN203529941 U CN 203529941U CN 201320630392 U CN201320630392 U CN 201320630392U CN 203529941 U CN203529941 U CN 203529941U
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Abstract
The utility model provides a heating purifying device, belongs to the technical field of machinery, and is used for solving the problem that the existing purifying device is incapable of internally removing crystals and has pollution on the environment, and the like. The heating purifying device comprises a purifying reaction furnace, wherein a raw material supply barrel is connected to the top of the purifying reaction furnace; a first gas inlet which is capable of causing the materials of the purifying reaction furnace to float and move is connected to the bottom of the purifying reaction furnace. The heating purifying device further comprises a heating device which is capable of causing the temperatures of different regions in the purifying reaction furnace to reach the predetermined numerical value range, wherein a product collecting opening for outputting the high-purity product within a specific temperature range and an impurity collecting opening for outputting impurities are arranged on the purifying reaction furnace; an exhaust port is further arranged at the top of the purifying reaction furnace. The heating purifying device has the advantages of being capable of obtaining high-purity silicon carbide and being high in production efficiency.
Description
Technical field
The utility model relates to a kind of purifying plant, particularly a kind of device that heats purification.
Background technology
Silicon carbide (SiC) is carbon element silicon with covalence key in conjunction with a kind of crystalline substance with diamond lattic structure forming, hardness is high, high temperature resistant, corrosion-resistant, thermal conductivity is high, broad-band gap and electronic mobility high, be widely used in semicon industry.
Industrial employing silicon-dioxide and carbon and/or wood chip pyroreaction are produced and are obtained silicon carbide, the silicon carbide making by the method is all with impurity, industrial production needs highly purified silicon carbide, therefore need to further purify to silicon carbide, to adapt to industrial demand.
The method that silicon carbide generally adopts micro mist to purify is at present purified, the disclosed a kind of purifying process of silicon carbide micropowder of Chinese patent literature [CN102328929A] for example, comprise step 1, in the reactor with filter screen, drop into silicon carbide crude product micro mist, water and kerosene, then stir at normal temperatures for some time and go out uncombined carbon; Step 2 drops into 98% vitriol oil in reactor, heats up and is incubated for some time, after insulation finishes, adds at normal temperatures hydrofluoric acid stirring reaction for some time, then uses whizzer centrifugal, and last water carries out rinsing, obtains wet product silicon carbide; The 3rd step.Wet product silicon carbide is dried, finally obtain silicon carbide dry product.In above-mentioned utility model, mainly by chemical reaction and centrifugation, silicon carbide is purified, in making the process of silicon carbide, silicon carbide crystallization meeting is wrapped in some impurity in the crystal of silicon carbide, by chemical reaction and centrifugation, cannot will be positioned at the intracrystalline Impurity removal of silicon carbide; Chemical reaction needs the regular hour could react thoroughly, and therefore more consuming time, purification efficiency is low; Method by chemical reaction can produce waste water, needs a set of sewage treatment equipment not to environment, greatly to have improved production cost.
Chinese patent literature discloses a kind of graphite heater [ZL94246584.9], comprises heating member, electrode and power supply, and heating member adopts graphite material to make plate, cast, tapered, and electrode connects power supply and heating member.This graphite heater can produce the well heater that is uniform temperature Gradient distribution.
Summary of the invention
The purpose of this utility model is to have the problems referred to above for existing technology, has proposed a kind of heating purifying plant, and the technical problem that the utility model solves is to make the purity of product of preparation higher.
The purpose of this utility model can realize by following technical proposal: a kind of heating purifying plant, comprise purified reaction stove, it is characterized in that, described purified reaction furnace roof portion is connected with raw material supplying bucket, described purified reaction furnace bottom is connected with the gas feed one for the material of purified reaction stove being swum and moving, described heating purifying plant also comprises can make different zones temperature in purified reaction stove reach respectively the heating unit of setting numerical range, on described purified reaction stove, be provided with for derive the impurity collection mouthful of product-collecting mouth and the derivation impurity of high-purity product in specified temp region, described purified reaction furnace roof portion is also provided with venting port.
The in-built silicon-carbide particle that needs purification of raw material supplying bucket, the temperature distribution that heating unit makes a purified reaction stove from top to bottom minute temperature increases progressively successively, be divided into two-layer, the first temperature layer is positioned at product-collecting mouth with upper part, the temperature of the first temperature layer is from purified reaction furnace roof portion 200 ° of 1500 ° of being incremented to product-collecting mouth top roughly, silicon carbide enters preheating and the impurity gasification lower than 1500 ° by the gasification temperature that is positioned at silicon carbide, the gasification temperature that is simultaneously positioned at silicon carbide inside can be escaped out from carborundum crystals by the mode of free evaporation lower than the impurity of 1500 °, impurity two kinds of modes when upper are collected and mouthful are extracted out in the first temperature layer gasification and from impurity, the temperature of the first temperature layer from product-collecting mouth place to purified reaction furnace bottom, temperature is 3000 ° to purified reaction furnace bottom place from 2800 ° of product-collecting mouth place, in the second temperature layer silicon carbide gasification, silicon carbide after gasification is extracted out from product-collecting mouth, because carborundum crystals granular size is different, in order to guarantee that all sic all gasifies, the temperature setting of product-collecting mouth bottom is set to the gasification temperature higher than silicon carbide, guarantee that larger particles silicon carbide also can be gasified totally.The gas entering from gas feed one is rare gas element, for example argon gas; The silicon carbide that enters purified reaction stove all gasifies, and only there is the second temperature layer in the silicon carbide of gasification, what from product-collecting mouth, collect is the mixed gas that comprises the silicon carbide composition of rare gas element and gasification, after overcooling recrystallize, just can obtain highly purified silicon carbide; By utilizing the different purifications of physical properties of silicon carbide and impurity, the purity of isolated silicon carbide is higher, does not have the byproduct of contaminate environment, has reduced production cost, and can continuously purify, and production efficiency is high.
In above-mentioned heating purifying plant, described heating unit comprises graphite heating body and copper electrode, and described graphite heating body covers Reaktionsofen outside surface, and described copper electrode one end is connected with graphite heating body, and the other end is connected with power supply.Therefore graphite heating body has high temperature resistant, has good temperature homogeneity, by accurate, the stable control different zones temperature of graphite heating physical efficiency, makes gas free from foreign meter in gas that product-collecting mouth derives, guarantees the purity of silicon carbide.
In above-mentioned heating purifying plant, described heating unit comprises radio-frequency coil and high frequency electric source, and described Reaktionsofen adopts resistant to elevated temperatures metallic substance to make, and described radio-frequency coil is looped around Reaktionsofen outside surface, and described radio-frequency coil is connected with high frequency electric source.Control different zones temperature that can be accurate, stable by radio-frequency coil, makes gas free from foreign meter in gas that product-collecting mouth derives, guarantees the purity of silicon carbide.
In above-mentioned heating purifying plant, described purified reaction furnace bottom is also provided with for pass into the gas feed two of reactive gas to purified reaction stove.Reactive gas can be hydrogen or chlorine, and reactive gas can increase the activity of silicon-carbide particle.
As preferred version, in above-mentioned heating purifying plant, in described purified reaction stove, be also provided with at least one auxiliary swimming with gas-sparging head, on described gas-sparging head, there are some gas ejection ports, above-mentioned auxiliary swim with gas-sparging head by pipeline respectively with corresponding gas feed tee joint.Gas-sparging head lays respectively at the first temperature layer and the second temperature layer, and the gas-sparging head that is positioned at the first temperature layer makes silicon carbide longer in the time of the first temperature layer, makes impurity have time enough gasification; The gas-sparging head that is positioned at the second temperature layer can make silicon carbide swim all the time at the second temperature layer, and the auxiliary silicon carbide having gasified enters product-collecting mouth faster simultaneously.
In above-mentioned heating purifying plant, described Reaktionsofen bottom is provided with rotary type material and collects ware, described Reaktionsofen bottom has the discharge port falling for raw material, described rotary type material is collected the drive-motor that ware comprises rotating disk and can drive dial rotation, on described rotating disk, there is several holding tanks, in above-mentioned holding tank, be placed with respectively material and collect ware, described rotating disk arranged outside has shield cap, on above-mentioned shield cap, there is the opening of collecting ware for taking out material, after described dial rotation, can make one of them material collect ware over against the discharge port of Reaktionsofen bottom, in remaining material collection ware, at least one is positioned at the opening part of shield cap.The gas temperature entering from gas feed one is lower, meeting crystallization after the silicon carbide of gasification contacts with this gas, the material that falls to Reaktionsofen bottom is collected ware, by shield cap, make Reaktionsofen keep the state of sealing relatively, after a full material is collected ware, open drive-motor and rotate rotating disk collecting, make another material collect ware and enter in Reaktionsofen, and the material of collecting full silicon carbide is collected ware and is produced in Reaktionsofen, from opening, material is collected to ware and take out, so circulation.
In above-mentioned heating purifying plant, described gas feed top arranges the disk that level covers purified reaction barrel cavity, and above-mentioned disc surfaces is evenly distributed with several gas jetting holes.The gas entering from gas feed one disperses after disperseing by the gas jetting hole disk, increase the crystallization number of the silicon carbide of the gasification that is positioned at purified reaction furnace bottom, improve the recovery rate of highly purified silicon carbide, it is more even that gas jetting hole by disk makes to spray into the gas of purified reaction bucket simultaneously, the swim effect of increase to silicon-carbide particle, slows down the speed that drops of particle.
In above-mentioned heating purifying plant, between described raw material supplying bucket and purified reaction stove, input speed setter is also set, described input speed setter is by regulating openings of sizes to control the speed that raw material enters purified reaction furnace chamber.By input speed setter, rationally regulate the quantity that enters silicon carbide in Reaktionsofen.
Compared with prior art, this heating purifying plant has the following advantages:
1, the silicon carbide that enters purified reaction stove all gasifies, and only there is the second temperature layer in the silicon carbide of gasification, what from product-collecting mouth, collect is the mixed gas that comprises the silicon carbide composition of rare gas element and gasification, after overcooling recrystallize, just can obtain highly purified silicon carbide.
2, by utilizing the different purifications of physical properties of silicon carbide and impurity, the purity of isolated silicon carbide is higher, does not have the byproduct of contaminate environment, has reduced production cost, and can continuously purify, and production efficiency is high.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of this heating purifying plant.
Fig. 2 is the structural representation of purified reaction stove.
In figure, 1, purified reaction stove; 11, gas feed one; 12, gas feed two; 13, venting port; 14, gas feed three; 15, gas-sparging head; 16, product-collecting mouth; 17, impurity is collected mouth; 21, the first temperature layer; 22, the second temperature layer; 41, graphite heating body; 42, copper electrode; 5, raw material supplying bucket; 61, rotating disk; 62, shield cap; 63, drive-motor; 7, input speed setter; 8, disk.
Embodiment
Be below specific embodiment of the utility model by reference to the accompanying drawings, the technical solution of the utility model is further described, but the utility model be not limited to these embodiment.
Embodiment mono-
As depicted in figs. 1 and 2, a kind of heating purifying plant, comprise purified reaction stove 1, purified reaction stove 1 top is connected with raw material supplying bucket 5, between raw material supplying bucket 5 and purified reaction stove 1, input speed setter 7 is set, input speed setter 7 is by regulating openings of sizes to control the speed that raw material enters purified reaction stove 1 inner chamber.By input speed setter 7, rationally regulate the quantity that enters silicon carbide in Reaktionsofen.Input speed setter 7 is prior art, the device of the disclosed a kind of adjusting granule material flow of Chinese patent literature (notification number 201149095Y) patent for example, have and can realize 7 identical functions of input speed setter in the utility model, so input speed setter 7 concrete structures do not specifically describe at the utility model.Purified reaction stove 1 bottom is connected with the gas feed 1 for the material of purified reaction stove 1 being swum and moving, heating purifying plant also comprises can make the interior different zones temperature of purified reaction stove 1 reach respectively the heating unit of setting numerical range, the temperature that in the present embodiment, heating unit makes a purified reaction stove 1 from top to bottom minute temperature increases progressively successively, be divided into two-layer, be respectively the first temperature layer 21 and the second temperature layer 22, on purified reaction stove 1, be provided with for derive the product-collecting mouth 16 of high-purity product and the impurity collection mouth 17 of derivation impurity in specified temp region, product-collecting mouth 16 stretches into purified reaction stove effuser with a level and is communicated with, effuser offers gas collection mouth, gas collection mouth downward, gas enters effuser by gas collection mouth, from product-collecting mouth 16, collect again, purified reaction stove 1 top is also provided with venting port 13.
As shown in Figure 1, heating unit comprises graphite heating body 41 and copper electrode 42, and graphite heating body 41 covers Reaktionsofen outside surface, and copper electrode 42 one end are connected with graphite heating body 41, and the other end is connected with power supply.Graphite heating body 41 is prior art, explains, so concrete structure is not described in this application in background technology.
As shown in Figure 2, purified reaction stove 1 bottom is also provided with for pass into the gas feed 2 12 of reactive gas to purified reaction stove 1.Reactive gas can be hydrogen or chlorine, and reactive gas can increase the activity of silicon-carbide particle.
As shown in Figure 2, in purified reaction stove 1, be also provided with at least one auxiliary swimming with gas-sparging head 15, gas-sparging head 15 is disk 8 shapes, on gas-sparging head 15, there are some gas ejection ports, gas ejection ports is circumferentially uniformly distributed on disk 8, assurance is even from the air-flow of gas ejection ports ejection, and auxiliary swimming is communicated with corresponding gas feed 3 14 respectively by pipeline with gas-sparging head 15.Gas-sparging head 15 lays respectively at the first temperature layer 21 and the second temperature layer 22, and the gas-sparging head 15 that is positioned at the first temperature layer 21 makes silicon carbide longer in the time of the first temperature layer 21, makes impurity have time enough gasification; The gas-sparging head 15 that is positioned at the second temperature layer 22 can make silicon carbide swim all the time at the second temperature layer 22, and the auxiliary silicon carbide having gasified enters product-collecting mouth 16 faster simultaneously.
As shown in Figure 2, gas feed top arranges the disk 8 that level covers purified reaction barrel cavity, and disk 8 surface uniforms are distributed with several gas jetting holes.The gas entering from gas feed 1 disperses after disperseing by the gas jetting hole disk 8, increase the crystallization number of the silicon carbide of the gasification that is positioned at purified reaction stove 1 bottom, improve the recovery rate of highly purified silicon carbide, it is more even that gas jetting hole by disk 8 makes to spray into the gas of purified reaction bucket simultaneously, the swim effect of increase to silicon-carbide particle, slows down the speed that drops of particle.
As shown in Figure 1, Reaktionsofen bottom is provided with rotary type material and collects ware, Reaktionsofen bottom has the discharge port falling for raw material, rotary type material is collected the drive-motor 63 that ware comprises rotating disk 61 and can drive rotating disk 61 to rotate, on rotating disk 61, there is several holding tanks, in holding tank, be placed with respectively material and collect ware, rotating disk 61 arranged outside have shield cap 62, on shield cap 62, there is the opening of collecting ware for taking out material, after rotating, rotating disk 61 can make one of them material collect ware over against the discharge port of Reaktionsofen bottom, in remaining material collection ware, at least one is positioned at the opening part of shield cap 62.Silicon-carbide particle is due to not of uniform size, larger silicon carbide is because the material that the too fast not gasification of falling velocity directly falls to Reaktionsofen bottom is collected ware, by shield cap 62, make Reaktionsofen keep the state of sealing relatively, after collecting full material collection ware, open drive-motor 63 and rotate rotating disks 61, making another material collect ware enters in Reaktionsofen, and the material of collecting full silicon carbide is collected ware and is produced in Reaktionsofen, from opening, material is collected to ware to take out, so circulation.
The in-built silicon-carbide particle that needs purification of raw material supplying bucket 5, the temperature distribution that heating unit makes a purified reaction stove 1 from top to bottom minute temperature increases progressively successively, be divided into two-layer, the first temperature layer 21 is positioned at product-collecting mouth 16 with upper part, the temperature of the first temperature layer 21 is 200 ° of 1500 ° of being incremented to product-collecting mouth 16 tops roughly from purified reaction stove 1 top, silicon carbide enters preheating and the impurity gasification lower than 1500 ° by the gasification temperature that is positioned at silicon carbide, the gasification temperature that is simultaneously positioned at silicon carbide inside can be escaped out from carborundum crystals by the mode of free evaporation lower than the impurity of 1500 °, impurity when upper two kinds of modes in the first temperature layer 21 gasification and collect mouthfuls 17 from impurity and extract out, the temperature of the first temperature layer 21 from product-collecting mouth 16 places to purified reaction stove 1 bottom, temperature is from 2800 ° of 3000 ° of locating to purified reaction stove 1 bottom at product-collecting mouth 16 places, in the second temperature layer 22 silicon carbide gasification, silicon carbide after gasification is extracted out from product-collecting mouth 16, because carborundum crystals granular size is different, in order to guarantee that all sic all gasifies, the temperature setting of product-collecting mouth 16 bottoms is set to the gasification temperature higher than silicon carbide, guarantees that larger particles silicon carbide also can be gasified totally.In the application, silicon carbide is mainly collected by product-collecting mouth 16 and material collection ware; The gas entering from gas feed 1 is rare gas element, for example argon gas; The silicon carbide that enters purified reaction stove 1 all gasifies, and only there is the second temperature layer 22 in the silicon carbide of gasification, what from product-collecting mouth 16, collect is the mixed gas that comprises the silicon carbide composition of rare gas element and gasification, after overcooling recrystallize, just can obtain highly purified silicon carbide; By utilizing the different purifications of physical properties of silicon carbide and impurity, the purity of isolated silicon carbide is higher, does not have the byproduct of contaminate environment, has reduced production cost, and can continuously purify, and production efficiency is high.
Embodiment bis-
The present embodiment is basic identical with structure and the principle of embodiment mono-, different place is: heating unit comprises radio-frequency coil and high frequency electric source, Reaktionsofen adopts resistant to elevated temperatures metallic substance to make, and radio-frequency coil is looped around Reaktionsofen outside surface, and radio-frequency coil is connected with high frequency electric source.Control different zones temperature that can be accurate, stable by radio-frequency coil, makes gas free from foreign meter in gas that product-collecting mouth derives, guarantees the purity of silicon carbide.
Specific embodiment described herein is only to the explanation for example of the utility model spirit.The utility model person of ordinary skill in the field can make various modifications or supplements or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present utility model or surmount the defined scope of appended claims.
Although more used purified reaction stove 1 herein; Gas feed 1; Gas feed 2 12; Venting port 13; Gas feed 3 14; Gas-sparging head 15; Product-collecting mouth 16; Impurity is collected mouth 17; The first temperature layer 21; The second temperature layer 22; Graphite heating body 41; Copper electrode 42; Raw material supplying bucket 5; Rotating disk 61; Shield cap 62; Drive-motor 63; Input speed setter 7; Disk 8 terms such as grade, but do not get rid of the possibility of using other term.Use these terms to be only used to describe more easily and explain essence of the present utility model; They are construed to any additional restriction is all contrary with the utility model spirit.
Claims (8)
1. one kind is heated purifying plant, comprise purified reaction stove (1), it is characterized in that, described purified reaction stove (1) top is connected with raw material supplying bucket (5), described purified reaction stove (1) bottom is connected with the gas feed one (11) for the material of purified reaction stove (1) being swum and moving, described heating purifying plant also comprises can make the interior different zones temperature of purified reaction stove (1) reach respectively the heating unit of setting numerical range, on described purified reaction stove (1), be provided with for derive the impurity collection mouthful (17) of product-collecting mouth (16) and the derivation impurity of high-purity product in specified temp region, described purified reaction stove (1) top is also provided with venting port (13).
2. heating purifying plant according to claim 1, it is characterized in that, described heating unit comprises graphite heating body (41) and copper electrode (42), described graphite heating body (41) covers Reaktionsofen outside surface, described copper electrode (42) one end is connected with graphite heating body (41), and the other end is connected with power supply.
3. heating purifying plant according to claim 1, it is characterized in that, described heating unit comprises radio-frequency coil and high frequency electric source, and described Reaktionsofen adopts resistant to elevated temperatures metallic substance to make, described radio-frequency coil is looped around Reaktionsofen outside surface, and described radio-frequency coil is connected with high frequency electric source.
4. according to the heating purifying plant described in claim 1 or 2 or 3, it is characterized in that, described purified reaction stove (1) bottom is also provided with for pass into the gas feed two (12) of reactive gas to purified reaction stove (1).
5. according to the heating purifying plant described in claim 1 or 2 or 3, it is characterized in that, in described purified reaction stove (1), be also provided with at least one auxiliary swimming with gas-sparging head (15), described gas-sparging head has some gas ejection ports on (15), and above-mentioned auxiliary swimming is communicated with corresponding gas feed three (14) respectively by pipeline with gas-sparging head (15).
6. according to the heating purifying plant described in claim 1 or 2 or 3, it is characterized in that, described gas feed top arranges the disk (8) that level covers purified reaction barrel cavity, and above-mentioned disk (8) surface uniform is distributed with several gas jetting holes.
7. according to the heating purifying plant described in claim 1 or 2 or 3, it is characterized in that, described Reaktionsofen bottom is provided with rotary type material and collects ware, described Reaktionsofen bottom has the discharge port falling for raw material, described rotary type material is collected the drive-motor (63) that ware comprises rotating disk (61) and can drive rotating disk (61) to rotate, described rotating disk has several holding tanks on (61), in above-mentioned holding tank, be placed with respectively material and collect ware, described rotating disk (61) arranged outside has shield cap (62), on above-mentioned shield cap (62), there is the opening of collecting ware for taking out material, described rotating disk (61) can make one of them material collect ware over against the discharge port of Reaktionsofen bottom after rotating, in remaining material collection ware, at least one is positioned at the opening part of shield cap (62).
8. according to the heating purifying plant described in claim 1 or 2 or 3, it is characterized in that, between described raw material supplying bucket (5) and purified reaction stove (1), input speed setter (7) is also set, described input speed setter (7) is by regulating openings of sizes to control the speed that raw material enters purified reaction stove (1) inner chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320630392.0U CN203529941U (en) | 2013-10-12 | 2013-10-12 | Heating purifying device |
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| CN201320630392.0U CN203529941U (en) | 2013-10-12 | 2013-10-12 | Heating purifying device |
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| CN203529941U true CN203529941U (en) | 2014-04-09 |
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| CN201320630392.0U Expired - Fee Related CN203529941U (en) | 2013-10-12 | 2013-10-12 | Heating purifying device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395830A (en) * | 2016-11-15 | 2017-02-15 | 乐山新天源太阳能科技有限公司 | Silica powder recycling device |
| CN108913336A (en) * | 2018-07-11 | 2018-11-30 | 福建泉州万通工业设计有限公司 | A kind of preparation method of oil tea refining equipment for purifying |
| CN115386953A (en) * | 2022-08-25 | 2022-11-25 | 东莞市天域半导体科技有限公司 | Method for effectively inhibiting generation of defect of falling object of SiC epitaxial wafer |
-
2013
- 2013-10-12 CN CN201320630392.0U patent/CN203529941U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395830A (en) * | 2016-11-15 | 2017-02-15 | 乐山新天源太阳能科技有限公司 | Silica powder recycling device |
| CN106395830B (en) * | 2016-11-15 | 2018-03-02 | 乐山新天源太阳能科技有限公司 | A kind of silica powder recovering device |
| CN108913336A (en) * | 2018-07-11 | 2018-11-30 | 福建泉州万通工业设计有限公司 | A kind of preparation method of oil tea refining equipment for purifying |
| CN115386953A (en) * | 2022-08-25 | 2022-11-25 | 东莞市天域半导体科技有限公司 | Method for effectively inhibiting generation of defect of falling object of SiC epitaxial wafer |
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Effective date of registration: 20200116 Address after: West of 4th floor, building 3, No. 818, east section of development avenue, Taizhou City, Zhejiang Province Patentee after: TAIZHOU BEYOND TECHNOLOGY Co.,Ltd. Address before: 318000, Zhejiang, Taizhou Province, 818 Eastern Road Development Avenue, 3, west side of the 4 Co-patentee before: Hoshino Masahiro Patentee before: TAIZHOU BEYOND TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20140409 Termination date: 20211012 |