201011121 六、發明說明 【發明所屬之技術領域】 本發明係關於對液晶顯示器（Liquid Crystal Display) 或電激發光顯示器（Electro-Luminescence Display)等之平 面顯示器（Flat Panel Display)用基板，施予特定處理之電 漿處理裝置及使用於此之處理氣體供給裝置。 | 【先前技術】 例如，在平面顯示器用基板（以下，也稱爲FPD用基 板）之表面，形成圖案之製程中，施予蝕刻或濺鍍、 CVD(化學氣相沉積）等之電漿處理。作爲用以執行如此之 電漿處理之電漿處理裝置，可舉出例如平行平板電漿處理 w-f- ca. 裝置。 此種之電漿處理裝置，係平行配置在處理室內具有下 部電極之載置台，和兼作處理氣體導入部之上部電極，經 • 上部電極將處理氣體導入至處理室內，並且對電極之至少 之一方施加高頻而在電極間形成高頻電場，藉由該高頻電 場形成處理氣體之電漿而對FPD用基板施予電漿處理。 然而，FPD用基板因與半導體晶圓不同，處理面積 大，故爲了使處理氣體從上部電極均勻分散至FPD用基 板之全面而予以供給，則出現各種提案。例如，專利文獻 1所示般，記載有設置將上部電極之中空部內區隔成使處 理氣體噴出至基板之中央部區域之中央部室，和使處理氣 體噴出至其周邊區域之周邊部室之區隔壁，連接分歧配 -5- 201011121 管，該分歧配管係用以使來自由例如具備有氣體供給源之 氣體箱等所構成之處理氣體供給手段之處理氣體予以分歧 而各供給至中央部室和周邊部室，爲了調整流動於各分歧 配管之處理氣體之流量，設置有質量流量控制器等之流量 調整手段。若藉由此，藉由調整各分歧配管之流量調整手 段，可以使供給至基板之中央部區域和周邊部區域之處理 氣體成爲均勻。 [專利文獻1]日本特開200 7-324331號公報 參 【發明內容】 (發明所欲解決之課題） 然而，因用以對FPD用基板執行電漿處理之上部電 極爲大型，故通常連接於中央部室之分歧配管之長度比連 接於周邊部室之分歧配管短。因此，連接於中央部室之分 歧配管之傳導率（流動之容易性）大於連接於周邊部室之分 歧配管之傳導率，有各分歧配管之管內壓力造成不均勻之 @ 問題。因此，必須調整流量調整手段，使連接於中央部室 之分歧配管之傳導率小於連接於周邊部室之分歧配管之傳 導率，使各分歧配管之管內壓力成爲均勻。該點，也可考 慮若以質量流量控制器構成上述各分歧配管之流量調整手 段，調整流動於分歧配管之處理氣體之流量即可。 但是，當以質量流量控制器構成上述各分歧配管之流 量調整手段之時，一般因在構成處理氣體供給手段之氣體 箱也設置質量流量控制器，故氣體箱之下游側（比質量流 -6- 201011121 量控制器更下游側）則超過大氣壓。因此，若氣體箱之下 游側之配管損傷時，因有氣體從其配管內洩漏至大氣中之 虞，故爲了防止此，必須例如將各配管設爲兩層構造等， 在配管構造費心思。 這一點藉由以針閥等之固定節流閥構成各分歧配管之 流量調整手段，因氣體箱之下游側之配管可以設爲大氣壓 以下，故即使配管損傷，氣體亦不會洩漏至大氣中。 Φ 但是，於以固定節流閥構成各分歧配管之流量調整手 段之時，則如上述般，使連接於中央部室之分歧配管之傳 導率小於連接於周邊部室之分歧配管之傳導率，必須縮小 固定連接於中央部室之分歧配管之固定節流閥之開閥度。 在此情形下，例如於僅從上部電極之中央區域供給大流量 之處理氣體而欲執行FPD基板之處理之時，則有無法確 保充分之傳導率等，無法因應FPD基板之處理而執行最 適合之處理氣體供給的問題。 φ 於是，本發明係鑑於如此之問題而所硏究出，其目的 在於提供於自氣體箱等之處理氣體供給手段使處理氣體分 歧而獨立供給至FPD基板之中央部區域和周邊部區域之 時，可以邊將處理氣體供給手段之下游側之配管內保持大 氣壓以下，邊因應FPD基板之處理而執行最適合處理氣 體之供給的電漿處理裝置等。 (用以解決課題之手段） 爲了解決上述課題，若藉由本發明之觀點，則提供一 201011121 種電漿處理裝置，在處理室內相向配設第1電極和第2電 極，一邊將處理氣體導入至被上述第2電極支撐之平面顯 示器用基板上，一邊將高頻電力供給至上述電極之一方或 雙方而生成電漿，依此對上述平面顯示器用基板施予特定 電漿處理，其特徵爲：設置對上述第1電極供給處理氣體 之處理氣體供給裝置，上述第1電極具備與上述第2電極 相向，形成用以將上述處理氣體朝向上述處理室內噴出之 多數氣體噴出孔之電極板，和支撐上述電極板之支撐體， 和在上述支撐體中被形成在上述電極板之間，導入上述處 理氣體之中空部，和將上述中空部區隔成中央部室和周邊 部室之環狀的區隔壁，上述處理氣體供給裝置具備：處理 氣體供給手段，和將來自該處理氣體供給手段之處理氣體 予以2分歧之各分歧配管，和調整該些通過各分歧配管之 流量的流量調整手段，和將來自上述各分歧配管之處理氣 體各導入至上述中央部室和上述周邊部室之配管，上述各 流量調整手段具備設置在上述各分歧配管之開關閥和固定 節流閥（例如針閥），被連接於上述中央部室之分歧配管之 流量調整手段，係上述開關閥和上述固定節流閥並聯而進 —步設置旁通配管，並且在上述旁通配管設置有開關閥。 爲了解決上述課題，若藉由本發明之另外的觀點，則 提供一種處理氣體供給裝置，在處理室內相向配設第1電 極和第2電極，一邊將處理氣體導入至被上述第2電極支 撐之平面顯示器用基板上，一邊將高頻電力供給至上述電 極之一方或雙方而生成電漿，依此對上述平面顯示器用基 -8- 201011121 板施予特定電漿處理的電漿處理裝置中，對上述第1電極 供給處理氣體，其特徵爲：設置對上述第1電極供給處理 氣體之處理氣體供給裝置，上述第1電極具備與上述第2 電極相向，形成用以將上述處理氣體朝向上述處理室內噴 出之多數氣體噴出孔之電極板，和支撐上述電極板之支撐 體，和在上述支撐體中被形成在上述電極板之間，導入上 述處理氣體之中空部，和將上述中空部區隔成中央部室和 Φ 周邊部室之環狀的區隔壁，具備：處理氣體供給手段，和 將來自該處理氣體供給手段之處理氣體予以2分歧之各分 歧配管，和調整該些通過各分歧配管之流量的流量調整手 段，和將來自上述各分歧配管之處理氣體各導入至上述中 央部室和上述周邊部室之配管，上述各流量調整手段具備 設置在上述各分歧配管之開關閥和固定節流閥（例如針 閥），被連接於上述中央部室之分歧配管之流量調整手 段，係上述開關閥和上述固定節流閥並聯而進一步設置旁 通配管，並且在上述旁通配管設置有開關閥。 若藉由如此之本發明，因使用固定節流閥，當作被設 置於自處理氣體供給手段分歧之各分歧配管的流量調整手 段，故即使例如處理氣體供給手段使用質量流量控制器， 處理氣體供給手段之下游側之配管亦可以保持於大氣壓以 下。依此，即使處理氣體供給手段之下游側之配管損傷， 亦可以防止氣體自其配管洩漏至大氣中。 並且，各分歧配管之流量調整手段因具備開關閥和固 定節流閥，故可以藉由因應各分歧配管之長度調整固定節 -9- 201011121 流閥之開閥度，調整傳導率。依此，因藉由配管長度短於 例如連接於第1電極之周邊部室之分歧配管，縮小連接於 中央部之分歧配管之固定節流閥之開閥度，可以使各分歧 配管之管內壓力均勻’故可以均勻供給處理氣體從第1電 極之中央部室及周邊部室。 而且，被連接於第1電極之中央部室之分歧配管之流 量調整手段因具備旁通配管，故可以以控制開關閥使不通 過固定調節閥而通過旁通配管供給至中央部室之方式，切 換分歧配管之處理氣體之流動。依此，即使在僅自例如中 央部室供給處理氣體之時，亦可以確保充分之傳導率。如 此一來，若藉由本發明，處理氣體供給手段之下游側之配 管可以邊保持於大氣壓以下，邊因應FPD基板之處理而 供給最適合之處理氣體。 再者，此時在被連接於上述周邊部室之分歧配管之流 量調整手段，即使在上述開關閥和上述固定節流閥之間連 接惰性氣體供給配管，並在該惰性氣體供給配管設置有開 關閥亦可。依此，因可以自第1電極之中央部室僅供給處 理氣體，自周邊部室僅供給情性氣體，故可以更提高FPD 用基板之處理的均勻性。 再者，上述各流量調整手段即使各上述開關閥和上述 固定節流閥並聯而設置多數旁通配管，並且在上述各旁通 配管各設置開關閥和固定節流閥，上述各流量調整手段之 固定節流閥各以成爲不同傳導率比之方式’調整開閥度亦 可。依此，藉由控制各流量調整手段之開關閥’將處理氣 -10- 201011121 體流通至所欲之配管，利用此處理氣體所流通之 合，則可以將所欲流量之處理氣體從各分歧配管 1電極之中央部室、周邊部室。依此，處理氣體 之下游側之配管亦可以邊保持於大氣壓以下，邊 基板之處理而控制供給於FPD用基板之中央部 邊部區域之處理氣體流量之均勻性。 再者，即使在從上述各分歧配管導入至上述 0 和上述周邊部室之氣體導入孔之上述中空部開 口，設置有將吐出於上述中空部之氣體流變更成 之整流構件亦可。依此，可以在中空部內更寬範 予以擴散。依此，可以使處理氣體自各氣體噴出 地予以噴出。 [發明效果] 若藉由本發明，可以邊將處理氣體供給手段 之配管內保持於大氣壓以下，邊因應FPD基板 執行最適合之處理氣體的供給。 【實施方式】 以下一面參照附件圖面一面針對本發明之較 態予以詳細說明。並且，在本說明書及圖面中， 上具有相同功能構成之構成要素，藉由賦予相同 略重複說明。 配管的組 供給至第 供給手段 因應FPD 區域和周 中央部室 口之吐出 水平方向 圍均句地 孔更均勻 之下游側 之處理而 佳實施型 針對實質 符號，省 -11 - 201011121 (電漿處理裝置之構成例） 首先’針對本發明之實施型態所涉及之電漿處理裝 置，一面參照圖面一面予以說明。第1圖爲多腔室型之電 漿處理裝置之外觀斜視圖。同圖所示之電漿處理裝置100 具備用以對平面顯示器用基板（FPD用基板）s施予電漿處 理之多數（例如3個）之處理室200。 在處理室200內設置有載置例如FPD用基板S之載 置台，在該載置台之上方設置有兼作用以導入處理氣體 (例如製程氣體）之噴淋頭的上部電極。在各處理室200 中，即使執行相同之處理（例如蝕刻處理等）亦可，即使執 行互相不同之處理（例如蝕刻處理和灰化處理等）亦可。並 且，針對處理室20 0內之具體構成例於後述。 各處理室2 00各經閘閥102被連結於剖面呈多角形狀 (例如剖面呈矩形狀）之搬運室1 1 0之側面。在搬運室1 1 0 進一步經閘閥104連結有裝載鎖定室120。在搬運室120 經閘閥106鄰設有基板搬出搬入機構130。 在基板搬出搬入機構130各鄰設有兩個指示器140。 在指示器140載置收納FPD用基板S之卡匣142。卡匣 142被構成能夠收納多片（例如25片）之FPD用基板S。 於藉由如此之電漿處理裝置對FPD用基板S執行電 漿處理之時，首先藉由基板搬出搬入機構130，將卡匣 142內之FPD用基板S搬入至裝載鎖定室120內。此時， 若在裝載鎖定室120內具有處理完之FPD用基板S之 時，則將其處理完之FPD用基板S自裝載鎖定室120內 201011121 搬出，與未處理之FPD用基板S更換。當FPD用基板S 被搬入至裝載鎖定室120內之時，則關閉閘閥1〇6。 接著，將裝載鎖定室120內減壓至特定真空度之後， 打開搬運室1 10和裝載鎖定室120間之閘閥104。然後， 藉由搬運室110內之搬運機構（無圖式），將裝載鎖定室 120內之FPD用基板S搬入至搬運室110內之後，關閉閘 閥 104。 Φ 在搬運室110內，更減壓而減壓至高於裝載鎖定室 120內之高真空度之後，打開閘閥102。然後，將未處理 之FPD用基板S搬入至兼作處理室2 00內之載置台的下 部電極。此時，若具有處理完之FPD用基板S之時，則 搬出其處理完之FPD用基板S，與未處理之FPD用基板S 更換。 在處理室200內，使下部電極和上部電極間產生電 漿，經上部電極將處理氣體導入至處理室內，依此對FPD • 用基板S執行特定電漿處理。 (處理室之構成例） 以下，針對處理室200之具體性構成例，一面參照圖 面一面予以說明。在此，針對本發明之電漿處理裝置適用 於鈾刻當作FPD用基板之例如液晶顯示器用之玻璃基板 (以下，也單稱爲「基板」）之裝置之時的處理室之構成例 予以說明。第2圖爲表示處理室200之槪略構成的剖面 圖。 -13- 201011121 第2圖所示之處理室20 0具備例如由表面被陽極氧化 處理（氧皮鋁處理）之鋁所構成之略角筒形狀之處理容器 202。處理容器202係在上端附近二分割成上下，處理容 器202之上部成爲可以開關，以便於容易執行內部之維 修。並且，處理容器202被接地。 在處理容器2 02內，在其底部，配設有具有當作第2 電極之一例的下部電極212的載置台210。在該載置台 210之上方，隔著間隙對向配置有兼作氣體導入部之第1 電極之一例的上部電極300。上部電極300經整合部206 而連接於高頻電源 208。自該高頻電源208供給例如 13_56MHz之高頻電力至上部電極300。 在處理容器2 02之外側，配設有處理氣體供給裝置 400，該處理氣體供給裝置400係用以對基板S施予成膜 或蝕刻等之特定處理之處理氣體。該處理氣體供給裝置 4 00係將來自構成處理氣體供給手段之氣體箱410之處理 氣體供給至處理室2 0 0內。氣體箱410具備處理氣體供給 源，在處理氣體供給源之配管設置有開關閥、質量流量控 制器。來自處理氣體供給源之處理氣體藉由質量流量控制 器調整流量，自氣體箱410被供給。並且，氣體箱410即 使具備多數處理氣體供給源亦可。此時，即使在各處理氣 體供給源之配管各設置開關閥、質量流量控制器，從氣體 箱410供給使該些配管之下游側合流而混合的處理氣體亦 可。並且，針對氣體箱410之具體構成例於後述。 在處理容器202之側壁，連接排氣路240，在該排氣 201011121 管240連接真空排氣手段242。再者，在處理容器202之 側壁’設置有用以在上述搬運室110之間執行基板S之搬 出入的搬出入口 250，該搬出搬入口 250藉由上述閘閥 1 02而被開關。 在如此之處理室2 00中，藉由自處理氣體供給裝置 400供給處理氣體至處理室2 00內，並且對上部電極300 施加高頻電力，則可以在下部電極212和上部電極300間 φ 產生處理氣體之電漿，對被載置於載置台210上之基板 S，執行蝕刻、灰化、成膜等之電漿處理。 上述下部電極212經絕緣材214而被支撐部216支 撐。在支撐部216之下面中央部，設置有貫通被形成在處 理容器202之底壁的開口部204而延伸於下方之保護管 218 〇 保護管218之下面係藉由直徑大於該保護管218之導 電性之支撐板220而被支撐。支撐板220係以塞住保護管 • 218之管內之方式安裝於保護管218»在支撐板220之周 邊固定有導電性之伸縮體222之下端。伸縮體222之上端 係被固定於處理容器202之開口部204之開口緣。 伸縮體222係氣密區隔配置有保護管218之內部空間 和大氣側空間。再者，在支撐體220設置有無圖式之升降 機構。藉由該升降機構，使支撐板22 0升降，依此可以使 載置台210升降。下部電極212經導電路213被連接於支 撐板220。依此，下部電極212經導電路213、支撐板 220、伸縮體222而電性連接於處理容器202 ’被接地。 -15- 201011121 並且，即使經阻抗調整部電性連接載置台210之下部 電極212和處理容器202亦可。具體而言，例如在下部電 極212和支撐板220之間利用導線連接阻抗調整部。依 此，阻抗調整部之一端連接於下部電極，並且另一端經支 撐板2 20及伸縮體2 22而被電性連接於處理容器202之底 部。藉由該阻抗調整部調整阻抗値，可以抑制連接高頻電 源之上部電極3 00和處理容器202之側壁之間產生電漿。 另外，上部電極3 00經由絕緣性構件所構成之框體 302而被安裝於處理容器202之上部內側面，並且在處理 容器202之上壁經例如多數螺栓23 0而被懸掛。具體而 言，在形成於處理容器202之上壁的孔安裝絕緣體232, 並在其絕緣體232內***螺栓230固定上部電極3 00。再 者，即使使用表面被絕緣加工之螺栓亦可。 再者，上部電極3 00也兼具當作朝向被載置於載置台 210之FPD用基板S之表面上噴出特定氣體之氣體導入部 之功能，構成所謂的噴淋頭。在上部電極300如第2圖所 示般形成由矩形之中空部所構成之氣體擴散用之緩衝室 330。在上部電極 300之下面（與下部電極對向之面）全 面，均等分散配置有多數氣體噴出孔312，從該氣體噴出 孔312利用下降流對處理室200內全體供給處理氣體。 具體而言，上部電極300被形成與形成上述氣體噴出 孔312之矩形狀之電極板310，和該電極板310幾乎相同 之形狀’具備裝卸自如地支撐電極板310之上面側的電極 支撐體320。電極板310和電極支撐體320係由表面被陽 201011121 極氧化處理之鋁所構成。並且，氣體噴出孔312之數量或 配置並不限定於第2圖所示者。 在電極支撐體320形成有構成上述緩衝室330之矩形 之空間部。該空間部係被形成開口於電極支撐體3 20之邊 部（底面），藉由在電極支撐體3 20之底面安裝電極板 3 1 0，關閉了上述空間部。 再者，在形成有電極支撐體320之緩衝室330之空間 II 內，經多數懸掛構件360懸掛於形成其空間之電極支撐體 3 20之上壁內面。懸掛構件3 60係由表面被陽極氧化處理 之鋁或 SUS(Stainless Used Steel)所構成。懸掛構件 360 係以螺栓等之締結構件364固定電極之支撐體320之上 壁。 再者，即使以上述締結構件364將懸掛構件3 60固定 於電極板310亦可，在懸掛構件360設置凸緣部，藉由小 於締結構件3 64之螺栓等之締結構件另外固定其凸緣部和 Φ 電極板亦可。 如此一來，不僅將電極板310安装於電極支撐體320 之邊部（底面），就連在電極支撐體320之緩衝室330內中 也藉由懸掛構件3 60懸掛，依此即使大型電極板310也可 以不產生自重所引起之彎曲或變形地安裝在電極支撐體 320 · 電極支撐體320之緩衝室330係藉由環狀（框狀）之區 隔壁350區隔成多室（例如中央部之第1室332和其周邊 部之第2室33 4)。再者，在電極支撐體320之上壁設置 -17- 201011121 有多數氣體導入孔3 26。在該些氣體導入孔326各連接有 處理氣體供給裝置4 00之分歧配管，來自處理氣體供給裝 置400之處理氣體被流量控制而導入至每各室3 32、 3 34 ° 例如，如第2圖所示般，來自氣體箱410之處理氣 體，係自氣體箱410通過分歧成兩個之一方的分歧配管 404而經流量調整手段420被導入至第1室332。通過另 一方之分歧配管406之處理氣體經流量調整手段43 0而被 _ 導入至第2室334。被供給至各室332、334之處理氣體 各藉由流量調整手段42 0、43 0而被流量控制。 如此一來，藉由個別控制自各室332、334朝向基板 S被導入至處理氣體之流量，即使基板S大面積化亦可以 使基板S全區域之氣體流量均等化，進而可以使電漿處理 均勻化。 (處理氣體供給裝置之配管構成例） © 在此，一面參照圖面，一面說明如此之處理氣體供給 裝置400之配管構成例。第3圖爲從下方觀看取下電極板 310之時之電極支撐體320之圖式。第4圖爲表示處理氣 體供給裝置40 0之外觀的槪略圖。第5圖爲以方塊圖表示 處理氣體供給裝置400之配管構成。並且，在第3圖、第 5圖中，觀念性以線圖表示處理氣體供給裝置400之配管 構成。 在此，針對在電極支撐體320形成5個氣體導入孔 -18- 201011121 326之情形予以說明。具體而言，在電極支撐體320之中 央配置有一個氣體導入孔326，在四個角附近各配置有一 個氣體導入孔3 26。該些5個氣體導入孔3 26各對稱性地 被配置於縱方向、橫方向。 第3圖所示之區隔壁350爲形成與緩衝室330相似形 之框狀之時的具體例。在該區隔壁350之上面及下面’沿 著區隔壁350之框部設置有例如無圖式之〇型環等之密 φ 封構件。若藉由如此之區隔壁350，緩衝室330則被區隔 成包圍中央部之第1室332和包圍第1室332之外側之周 邊部的第2室3 34。 如此之區隔壁350因被夾入電極支撐體320之上壁內 面和電極板310之間而保持，故若自電極支撐體3 20取下 電極板310，則可以容易與不同環形狀之區隔壁350交 換。第3圖所示之區隔壁350爲形成第1室332之面積成 爲緩衝室33 0之全體面積的大約2 5 %之環形狀。於藉由如 # 此之區隔壁350而被區隔之時，第1室332係從中央之氣 體導入孔326被導入至處理氣體，第2室334係從四角附 近之4個氣體導入孔3 26各被導入處理氣體。 將處理氣體導入至如此所配置之氣體導入孔326之 時，處理氣體供給裝置400被構成如第3圖、第4圖所示 般。即是，第3圖所示之處理氣體供給配管4 02被分歧成 將處理氣體導入至第1室332之氣體導入孔326的分歧管 404，和將處理氣體導入至第2室334之氣體導入孔326 的分歧配管406的兩個。在各分歧配管404、406設置有 -19- 201011121 流量調整手段420、43 0。 上述分歧配管404經流量調整手段420連接於中央氣 體導入孔326。再者，上述分歧配管406在流量調整手段 430之下游側分歧成4個，該些各分歧配管406a〜406d 各連接於四角附近的4個氣體導入孔3 26。具體而言，如 第4圖所示般，分歧配管40 6在流量調整器43 4之下游 側，又分歧成兩個，將一方配管分歧成分歧配管406a、 406b，將另一方配管分歧成分歧配管40 6c、40 6d。並不 限定於如此配管之構成，分歧配管406即使在開關閥 432、流量調整器434之下游側以放射狀分歧成4個亦 可。 上述流量調整手段420、430各藉由例如被設置在上 游側之開關閥422、423和被設置在下游側之流量調整器 424、434所構成。依此該些流量調整手段420、430，可 以個別控制自第1室332、第2室334被導入至處理室 200內之處理氣體之流量。 氣體箱410係被構成例如第5圖所示般。在此，舉出 經氣體供給配管510A〜510D構成可供給4種氣體（第1 氣體、第2氣體、第3氣體、惰性氣體）之情形爲例。該 些氣體之中，第1氣體、第2氣體、第3氣體爲例如當作 蝕刻氣體之碳氟化合物系之氟化合物、CF4、C4F6、 C4F8、C5F8等之CxFy氣體。於該等氣體，含有作爲控制 CF系反應生成物之積垢的氣體例如02氣體亦可。並且， 惰性氣體即使當作例如載體氣體之稀有氣體（例如Ar氣體） 201011121 亦可，即使當作例如沖洗氣體使用之N2氣體等亦可。並 且，氣體供給源之數量並不限定於第5圖所示之例，即使 例如一個或兩個亦可，再者即使設置成四個以上亦可。 如此一來，當作蝕刻氣體使用之第1氣體、第2氣 體、第3氣體之氣體供給配管51 0A〜51 0C也構成相同。 即是，各氣體供給配管5 10A〜510C具備有各針對第1氣 體、第2氣體、第3氣體之氣體供給源520 A〜520C，各 • 氣體供給源52〇A〜52〇C各經氣體供給配管510A〜510C 而連接成合流至處理氣體供給配管4 02。 各氣體供給配管510A〜510C之氣體供給配管510A 〜510C設置有用以調整來自氣體供給源520A〜520C之 氣體流量的流量控制器，例如質量流量控制器（MFC)540A 〜540C。在此之質量流量控制器（MFC)540A〜540 C即使 各使用容量不同者亦可。 在各質量流量控制器（MFC) 540A〜540C之上游側 Φ 及下游側各設置有第1斷流閥（上游側斷流閥）5 3 0A〜 530C，第2斷流閥（下游側斷流閥）5 50A〜550C。藉由關 閉第1斷流閥530A〜530C、第2斷流閥55 0A〜550C之 雙方，則可以阻斷各質量流量控制器（MFC)540A〜540C 中氣體之流動。依此，可以將例如實際通往各質量流量控 制器（MFC) 5 40 A〜540C之氣體流量調整成0。 並且，如第5圖所示般，在氣體供給源520A〜520C 和第1斷流閥（上游側斷流閥）530A〜530C之間，設置有 手動閥522A〜522C。並且，在手動閥522A〜522C和第1 -21 - 201011121 斷流閥（上游側斷流閥）530A〜53 0C之間，雖然無圖式， 但是即使又設置減壓閥（調節閥）、壓力計（PT)亦可。 另外，惰性氣體（例如，N2氣體）之氣體供給配管 51 0D具備惰性氣體之氣體供給源520D，成爲可以將來自 該氣體供給源520D之惰性氣體經其他各氣體供給配管 510A〜510C之質量流量控制器（MFC)540A〜540C、第2 斷流閥550A〜550C而供給至處理室200內。依此，針對 N2氣體因可以利用質量流量控制器（MFC)540A〜540C， 故不需要個別設置質量流量控制器（MFC)。並且，可以不 經由該些各氣體供給配管510A〜510C而經由處理氣體供 給配管402而供給至處理室200。 具體而言，惰性氣體之氣體供給源520D係藉由氣體 供給配管51 0D經第2斷流閥55 0D而連接於處理氣體供 給配管402，並且各經斷流閥560A〜560C而連接於各氣 體供給配管510A〜510C之第1斷流閥530A〜530C和質 量流量控制器（MFC)540A〜540C之間。 再者，在氣體供給配管51 0D也與其他氣體供給配管 510A〜510C相同，連接有手動閥522D、第1斷流閥（上 游側斷流閥）5 3 0D。並且，於以質量流量控制器 (MFC)540A〜540C控制惰性氣體之流量之時，即使將上 述斷流閥5 60A〜560C當作設置在質量流量控制器（MFC) 之上游側的第1斷流閥（上游側斷流閥）而予以控制亦可。 在如此構成之處理氣體供給裝置400中，藉由控制氣 體箱410內之各閥及MFC等，以特定氣體流量所混合之 201011121 處理氣體經處理氣體供給配管402而被供給至處理室 200。此時，依據流量調整手段420、430，可以個別控制 自第1室332、第2室334被導入至處理室200內之處理 氣體之流量。 例如，爲了從上部電極300朝向FPD基板S均句供 給氣體，必須使連接於中央之氣體導入孔326之分歧配管 404，和連接於四角附近之4個氣體導入孔3 26之分歧配 # 管40 6之管內壓力均勻。但是，因用以對FPD用基板S 執行電漿處理之上部電極300爲大型，連接於中央部之第 1室332之分歧配管4 04之長度比連接於周邊部之第2室 3 34之分歧配管406短，故傳導率（流動之容易性）也變 大。因此，必須調整流量調整器424、434，使流入分歧 配管404之處理氣體之流量少於流入分歧配管406之處理 氣體之流量，而使各分歧配管404、40 6之管內壓力成爲 均勻。 φ 並且，針對上部電極300之區隔壁350，並不限定於 第3圖所示者。例如，即使將處理氣體供給裝置400適用 於設置第6圖所示之區隔壁350之上部電極300亦可。第 6圖所示之區隔壁350設爲第1室332之面積比起第3圖 所示之區隔壁350爲寬大之環形狀。若藉由第6圖所示之 區隔壁350，第1室332之面積成爲緩衝室330之全體面 積的大約5 0 %。 再者，如第6圖所示之區隔壁350所示般，設定成被 區隔之各室332、334之區域內所含有之氣體導入孔326 -23- 201011121 之數量與第3圖所示之情形相同的環形狀，依此不用變更 處理氣體供給裝置4 00之配管構成，可以僅變更緩衝室 330之區隔面積。 然而，上述流量調整器424、434亦可由例如質量流 量控制器構成。但是，當以質量流量構成流量調整器 4 24、434之時，在氣體箱410內也設置有質量流量控制 器540 A〜540C，故氣體箱410之下游側（較質量流量控制 器540A〜540C更下游側）超過大氣壓。因此，若氣體箱 410之下游側之配管受損時，則有氣體從其配管內洩漏至 大氣中之虞，故爲了防止此，必須將配管設爲雙層構造 等，在配管構造上費心思。 在此，在本實施型‘態中，作爲流量調整器424、43 4 係以利如針閥等之固定節流閥來構成，依此氣體箱410之 下游側成爲大氣壓以下，即使配管損傷氣體也不會洩漏至 大氣中。然後，於以固定節流閥構成流量調整器424、 434之時，如上述般，以使流入分歧配管404之處理氣體 之流量少於流入分歧配管40 6之處理氣體之流量的方式， 在縮小固定節流閥之開閥度之狀態下固定。例如，當將固 定節流閥之開閥度關閉之時設爲〇之時，並且將全開設爲 10之時，以分歧配管404和分歧配管406之傳導率成爲 3: 10之方式，調整構成各流量調整器424、434之固定 節流閥之開閥度。 但是，如此一來當縮小固定構成分歧配管404之流量 調整器424之固定節流閥之開閥度時，例如僅從上部電極 201011121 3 00之中央區域供給大流量之處理氣體而欲執行FPD基板 S之處理之時，則有無法確保充分之傳導率等，無法因應 FPD基板S之處理而執行最適合之處理氣體供給的問題。 因此，將例如不通過流量調整器424之旁通配管並聯設置 在流量調整器424，藉由將處理氣體之流動能夠切換至旁 通配管，並可以經旁通配管而供給大流量之處理氣體爲 佳。 Φ 以下，一面參照圖面一面詳細說明如此之配管構成之 具體例。第7圖爲表示具備有旁通配管之配管構成之具體 例的圖式。在此，爲將旁通配管404A並聯設置於分歧配 管404之流量調整器424之情形。在旁通配管404A設置 有開關閥42 2A，成爲可以切換成使通過分歧配管404之 處理氣體經流量調整器424而流動之情形和經旁通配管 4 0 4 A而流動之情形。 此時，例如當將固定節流閥之開閥度關閉之時設爲〇 # 之時，並且將全開設爲10之時，以分歧配管404和分歧 配管40 6之傳導率成比爲3: 10之方式，先調整固定構成 各流量調整器424、43 4之固定節流閥之開閥度。並且， 固定節流閥之開閥度並不限定於上述之情形。事先因應分 歧配管404和分歧配管406之長度等，求出分歧配管404 和分歧配管40 6之管內壓力成爲均勻之傳導率比，以成爲 其傳導率比之方式來調整固定節流閥之開閥度爲佳。 若藉由具有如此配管構成之處理氣體供給裝置400之 時，例如於欲從上部電極300之中央區域和其周邊區域均 -25- 201011121 勻供給處理氣體之時，打開開關閥432，並且打開開關閥 422而關閉開關閥422A，依此處理氣體經流量調整器434 流入至分歧配管406，並且處理氣體若經流量調整器424 而流入至分歧配管404即可。 對此，於欲僅從上部電極300之中央區域供給大流量 之處理氣體之時，關閉開關閥432，並且關閉開關閥422 而打開開關閥422A，依此不在分歧配管406流入處理氣 體，若經旁通配管404A從分歧配管4 04流通處理氣體即 可 〇 依此，即使在縮小構成分歧配管404之流量調整器 42 4之固定節流閥之開閥度而予以固定之時，亦可以經旁 通配管404 A而僅從上部電極300之中央區域可以供給大 流量之處理氣體。 並且，在第7圖所示之配管構成中之分歧配管40 6 中，例如第8圖所示般，即使又將供給惰性氣體（例如Ar 氣體、He氣體等）之惰性氣體供給配管408連接於開關閥 432和流量調整器434之間亦可。此時，在惰性氣體供給 配管4 0 8設置開關閥4 0 9，成爲被切換成從上部電極3 0 0 之周邊區域僅供給惰性氣體。 即是，藉由關閉開關閥432並且打開開關閥409，可 以自上部電極3 00之周邊區域僅供給惰性氣體。依此，藉 由自上部電極300之中央區域供給處理氣體，且自周邊區 域供給惰性氣體，則可以提高FPD基板之處理之均勻 性。 -26- 201011121 如此之惰性氣體即使構成自例如第5圖所示之氣體箱 410內之惰性氣體之氣體供給配管51 0D直接供給第7圖 所示之惰性氣體供給配管408亦可，再者，即使以與第5 圖所示之氣體供給配管510A〜510D不同之系統設置氣體 供給流路，直接被供給至惰性氣體供給配管408亦可。 .再者，在第7圖、第8圖中，雖然針對僅在分歧配管 404設置旁通配管404A之時予以說明，但是並不限定於 φ 此，不僅分歧配管404，即使在分歧配管406也設置旁通 配管亦可。 此時，例如第9圖所示般，在分歧配管4 04，將多數 (例如兩個）之旁通配管404A、404B各並聯設置在流量調 整器424，在該些旁通配管404 A ' 404B即使各設置有開 關閥 422A、422B、流量調整器424A、424B亦可。再 者，在分歧配管406，將多數（例如兩個）之旁通配管 4 06A、406B各並聯設置在流量調整器434，在該些旁通 # 配管406A、406B即使各設置有開關閥432A、432B、流 量調整器434A、434B亦可。 然後，將流量調節器42 4、424 A、42 4B之固定節流 閥之開閥度固定於各不相同之開閥度，而調整傳導率比， 依此可以利用控制各開關閥422、422A、422B所流通之 配管的組合將多數種類之流量流入分歧配管404。201011121 VI. Description of the Invention [Technical Fields of the Invention] The present invention relates to a substrate for a flat panel display such as a liquid crystal display or an electro-luminescence display (Electro-Luminescence Display). A plasma processing apparatus for processing and a processing gas supply apparatus used therefor. [Prior Art] For example, in the process of forming a pattern on the surface of a substrate for a flat display (hereinafter also referred to as a substrate for FPD), plasma treatment such as etching or sputtering, CVD (Chemical Vapor Deposition), or the like is applied. . As a plasma processing apparatus for performing such plasma treatment, for example, parallel plate plasma treatment w-f-ca. Device. Such a plasma processing device, Parallelly disposed in a processing chamber having a lower electrode in the processing chamber, And double as the upper electrode of the processing gas introduction portion, • The upper electrode introduces the process gas into the processing chamber. And applying a high frequency to at least one of the electrodes to form a high frequency electric field between the electrodes, The FPD substrate is subjected to a plasma treatment by forming a plasma of the processing gas by the high frequency electric field. however, The substrate for FPD is different from the semiconductor wafer. Large processing area, Therefore, in order to uniformly distribute the process gas from the upper electrode to the entire substrate for the FPD, There are various proposals. E.g, As shown in Patent Document 1, There is described a central portion in which a hollow portion of an upper electrode is partitioned so that a process gas is ejected to a central portion of the substrate. And a partition wall that allows the process gas to be ejected to the peripheral portion of the peripheral region thereof, Connection difference with -5- 201011121 tube, The branch pipe is used to supply the process gas from the process gas supply means including, for example, a gas tank provided with a gas supply source, to each of the central portion and the peripheral portion. In order to adjust the flow rate of the process gas flowing through each of the branch pipes, A flow adjustment means such as a mass flow controller is provided. If by this, By adjusting the flow adjustment of each divergent pipe, The processing gas supplied to the central portion and the peripheral portion of the substrate can be made uniform. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. H07-324331. Because the upper part of the plasma for the FPD substrate is extremely large, Therefore, the length of the branch pipe which is usually connected to the center portion is shorter than the branch pipe connected to the peripheral portion. therefore, The conductivity of the dissimilar piping connected to the central chamber (ease of flow) is greater than the conductivity of the dissimilar piping connected to the peripheral chamber. There is an uneven @ problem in the tube pressure of each of the different piping. therefore, The flow adjustment method must be adjusted. The conductivity of the branching pipes connected to the central chamber is smaller than the conductivity of the branching pipes connected to the peripheral chambers. The pressure inside the tubes of each of the branch pipes is made uniform. That point, It is also conceivable to construct the flow adjustment means of each of the above-mentioned divergent pipes by the mass flow controller. The flow rate of the process gas flowing through the branch pipes can be adjusted. but, When the mass flow controller constitutes the flow adjustment means for each of the above-described branch pipes, Generally, a mass flow controller is also provided in the gas box constituting the processing gas supply means, Therefore, the downstream side of the gas tank (more downstream than the mass flow -6-201011121 controller) exceeds atmospheric pressure. therefore, If the piping on the side of the gas tank is damaged, Because of the leakage of gas from its piping into the atmosphere, Therefore, in order to prevent this, For example, each pipe must be set to a two-layer structure or the like. In the piping structure, I have to worry about it. In this case, the flow regulating means for each of the branch pipes is constituted by a fixed throttle valve such as a needle valve. Since the piping on the downstream side of the gas tank can be set to atmospheric pressure or less, Therefore, even if the piping is damaged, The gas will not leak into the atmosphere. Φ However, When a flow control device for each branch pipe is formed by a fixed throttle valve, As mentioned above, The conductivity of the branching pipes connected to the central chamber is smaller than the conductivity of the branching pipes connected to the peripheral chambers. It is necessary to reduce the valve opening degree of the fixed throttle valve that is fixedly connected to the branch pipe of the center chamber. In this case, For example, when a large flow rate of processing gas is supplied from only the central region of the upper electrode to perform processing of the FPD substrate, There is no way to ensure sufficient conductivity, etc. The problem of the most suitable process gas supply cannot be performed in response to the processing of the FPD substrate. φ So, The present invention has been made in view of such problems, It is an object of the present invention to provide a process gas supply means such as a gas box for independently supplying the process gas to the central portion and the peripheral portion of the FPD substrate. It is possible to maintain the pressure inside the piping on the downstream side of the processing gas supply means below atmospheric pressure. A plasma processing apparatus or the like which is most suitable for processing the supply of gas is performed in response to the processing of the FPD substrate. (Means for solving the problem) In order to solve the above problems, If by the point of view of the present invention, Provide a 201011121 plasma processing unit, The first electrode and the second electrode are disposed opposite each other in the processing chamber, The processing gas is introduced onto the substrate for the flat display supported by the second electrode, The high frequency power is supplied to one or both of the electrodes to generate a plasma. According to the above, the substrate for the flat display device is subjected to a specific plasma treatment, Its characteristics are: Providing a processing gas supply device that supplies a processing gas to the first electrode, The first electrode is provided to face the second electrode, Forming an electrode plate for ejecting the processing gas toward a plurality of gas ejection holes in the processing chamber, And a support body supporting the above electrode plate, And being formed between the above electrode plates in the above support body, Introducing the hollow portion of the above treatment gas, And partitioning the hollow portion into a ring-shaped partition wall of the central portion and the peripheral portion, The processing gas supply device described above includes: Handling gas supply means, And the divergent pipes which divide the processing gas from the processing gas supply means into two, And adjusting the flow adjustment means for the flow through each of the divergent pipes, And a piping for introducing the processing gas from each of the branch pipes to the central portion and the peripheral portion, Each of the flow rate adjusting means includes an on-off valve and a fixed throttle valve (e.g., a needle valve) provided in each of the branch pipes. a flow adjustment means for the branch piping connected to the central portion, The above-mentioned on-off valve and the above fixed throttle are connected in parallel to set the bypass pipe. Further, an on-off valve is provided in the bypass pipe. In order to solve the above problems, According to another aspect of the present invention, Providing a processing gas supply device, The first electrode and the second electrode are disposed opposite to each other in the processing chamber, Introducing the processing gas onto the substrate for a flat display supported by the second electrode, The high frequency power is supplied to one or both of the electrodes to generate a plasma. According to the above, in the plasma processing apparatus for applying the specific plasma treatment to the above-mentioned flat display display base -8-201011121, Supplying a processing gas to the first electrode, Its characteristics are: Providing a processing gas supply device that supplies a processing gas to the first electrode, The first electrode is provided to face the second electrode. Forming an electrode plate for discharging the processing gas toward a plurality of gas ejection holes in the processing chamber, And a support supporting the above electrode plate, And being formed between the above electrode plates in the above support body, Introducing the hollow portion of the process gas, And partitioning the hollow portion into a ring-shaped partition wall of the central portion and the Φ peripheral portion, have: Processing gas supply means, And each of the dissimilar piping that divides the processing gas from the processing gas supply means into two, And adjusting the flow adjustment means for the flow through each of the divergent pipes, And piping for introducing the processing gases from the respective branch pipes to the center chamber and the peripheral chamber, respectively. Each of the flow rate adjusting means includes an on-off valve and a fixed throttle (e.g., a needle valve) provided in each of the branch pipes. a flow adjustment device that is connected to the branch pipe of the central portion, The above-mentioned on-off valve and the above fixed throttle are connected in parallel to further provide a bypass pipe. Further, an on-off valve is provided in the bypass pipe. If by this invention, Due to the use of a fixed throttle, As a flow rate adjustment means to be placed in each branch pipe that is different from the processing gas supply means, Therefore, even if, for example, the process gas supply means uses a mass flow controller, The piping on the downstream side of the processing gas supply means can also be kept below atmospheric pressure. Accordingly, Even if the piping on the downstream side of the processing gas supply means is damaged, It also prevents gas from leaking into the atmosphere from its piping. and, The flow adjustment means for each branch pipe has an on-off valve and a fixed throttle valve. Therefore, it is possible to adjust the valve opening degree of the fixed section -9-201011121 by adjusting the length of each branch pipe. Adjust the conductivity. Accordingly, Since the length of the pipe is shorter than, for example, a branch pipe connected to the peripheral portion of the first electrode, Reducing the valve opening degree of the fixed throttle connected to the branch pipe at the center, The pressure in the tubes of the respective branch pipes can be made uniform, so that the processing gas can be uniformly supplied from the central portion and the peripheral portion of the first electrode. and, The flow adjustment means for the branch pipes connected to the central portion of the first electrode is provided with a bypass pipe. Therefore, it is possible to control the on-off valve so as to be supplied to the central portion through the bypass pipe without passing through the fixed regulating valve. The flow of the process gas of the divergent piping is switched. Accordingly, Even when only the processing gas is supplied from, for example, the central office, It also ensures sufficient conductivity. As a result, If by the present invention, The piping on the downstream side of the processing gas supply means can be kept below atmospheric pressure. The most suitable processing gas is supplied in response to the processing of the FPD substrate. Furthermore, At this time, the flow rate adjustment means of the branch pipes connected to the peripheral chambers, Even if an inert gas supply pipe is connected between the above-mentioned switching valve and the above fixed throttle valve, A shut-off valve may be provided in the inert gas supply pipe. Accordingly, Since only the processing gas can be supplied from the central portion of the first electrode, Only the erotic gas is supplied from the peripheral chamber. Therefore, the uniformity of the processing of the substrate for FPD can be further improved. Furthermore, Each of the flow rate adjustment means is provided with a plurality of bypass pipes even if the respective switching valves and the fixed throttle are connected in parallel. And each of the bypass pipes is provided with an on-off valve and a fixed throttle, The fixed throttle valves of the respective flow rate adjusting means may be adjusted to have different valve opening degrees. Accordingly, The processing gas -10- 201011121 is circulated to the desired piping by controlling the on-off valves of the respective flow adjustment means. Using the circulation of this process gas, Then, the processing gas of the desired flow rate can be taken from the central portion of each of the divergent pipes 1 electrode, Peripheral room. Accordingly, The piping on the downstream side of the processing gas can also be kept below atmospheric pressure. The uniformity of the flow rate of the processing gas supplied to the central portion of the FPD substrate is controlled by the processing of the substrate. Furthermore, Even in the hollow portion opening of the gas introduction hole introduced into the above-mentioned 0 and the peripheral portion chamber from the respective branch pipes, It is also possible to provide a rectifying member that changes the flow of the gas that is discharged into the hollow portion. Accordingly, It can spread more widely in the hollow. Accordingly, The process gas can be ejected from the respective gases. [Effect of the Invention] According to the present invention, It is possible to keep the inside of the piping for the processing gas supply means below atmospheric pressure. The most suitable processing gas supply is performed in response to the FPD substrate. [Embodiment] Hereinafter, the state of the present invention will be described in detail with reference to the attached drawings. and, In this specification and drawings, Have the same functional components, By repeating the same description. The group of piping is supplied to the first supply means. In response to the discharge of the FPD area and the central part of the circumference of the chamber, the horizontal direction is uniform. The hole is more uniform. The downstream side is processed. -11 - 201011121 (Configuration Example of Plasma Processing Apparatus) First, the plasma processing apparatus according to the embodiment of the present invention is This will be explained with reference to the drawing. Fig. 1 is a perspective view showing the appearance of a multi-chamber type plasma processing apparatus. The plasma processing apparatus 100 shown in the figure has a processing chamber 200 for applying a plurality of (for example, three) plasma treatments to a substrate for a flat display (substrate for FPD) s. A mounting table on which, for example, the substrate S for FPD is placed is provided in the processing chamber 200, An upper electrode of a shower head that serves to introduce a processing gas (e.g., process gas) is disposed above the mounting table. In each processing chamber 200, Even if the same processing (such as etching treatment, etc.) is performed, Even if different processes (such as etching and ashing) are performed. And, A specific configuration example in the processing chamber 20 will be described later. Each of the processing chambers 200 is connected to the side surface of the transport chamber 1 1 0 having a polygonal cross section (for example, a rectangular cross section) via the gate valve 102. The load lock chamber 120 is further coupled to the transfer chamber 1 10 via the gate valve 104. The substrate carrying-out mechanism 130 is disposed adjacent to the transfer chamber 120 via the gate valve 106. Two indicators 140 are provided adjacent to each other in the substrate carry-in/out mechanism 130. A cassette 142 for accommodating the substrate S for FPD is placed on the indicator 140. The cassette 142 is configured to accommodate a plurality of (for example, 25) FPD substrates S. When the plasma processing is performed on the substrate S for FPD by such a plasma processing apparatus, First, the loading and unloading mechanism 130 is carried out by the substrate. The FPD substrate S in the cassette 142 is carried into the load lock chamber 120. at this time, If there is a processed substrate F for the FPD in the load lock chamber 120, Then, the processed FPD substrate S is carried out from the loading lock chamber 120 201011121, Replace with the unprocessed FPD substrate S. When the FPD substrate S is carried into the load lock chamber 120, Then close the gate valve 1〇6. then, After decompressing the inside of the load lock chamber 120 to a specific degree of vacuum, The gate valve 104 between the transfer chamber 1 10 and the load lock chamber 120 is opened. then, By the transport mechanism (no picture) in the transfer room 110, After the FPD substrate S in the load lock chamber 120 is carried into the transfer chamber 110, Close the gate valve 104. Φ in the transfer chamber 110, After depressurization and depressurization to a higher degree than the high vacuum in the load lock chamber 120, The gate valve 102 is opened. then, The unprocessed FPD substrate S is carried into the lower electrode which also serves as a mounting table in the processing chamber 200. at this time, If there is a processed substrate F for FPD, Then, the substrate S for processing the FPD is removed, Replace with the unprocessed FPD substrate S. In the processing chamber 200, Producing a plasma between the lower electrode and the upper electrode, Introducing the processing gas into the processing chamber through the upper electrode, According to this, the FPD • performs specific plasma processing with the substrate S. (Configuration example of processing room) For the specific configuration example of the processing chamber 200, This will be explained with reference to the drawing. here, The plasma processing apparatus according to the present invention is applied to a glass substrate for liquid crystal display, for example, for uranium engraving as a substrate for FPD (hereinafter, The configuration of the processing chamber at the time of the device referred to simply as "substrate" will be described. Fig. 2 is a cross-sectional view showing a schematic configuration of the processing chamber 200. -13- 201011121 The processing chamber 20 shown in Fig. 2 is provided with a processing container 202 having a slightly rectangular tube shape composed of, for example, aluminum whose surface is anodized (oxygen aluminum treated). The processing container 202 is divided into upper and lower sides near the upper end. The upper portion of the processing container 202 becomes switchable, This makes it easy to perform internal maintenance. and, Processing vessel 202 is grounded. In the processing container 02, At the bottom, A mounting table 210 having a lower electrode 212 as an example of a second electrode is disposed. Above the mounting table 210, The upper electrode 300, which is an example of the first electrode that also serves as the gas introduction portion, is disposed opposite to the gap. The upper electrode 300 is connected to the high frequency power source 208 via the integration portion 206. High frequency power of, for example, 13 to 56 MHz is supplied from the high frequency power supply 208 to the upper electrode 300. On the outside of the processing container 02, It is equipped with a processing gas supply device 400, The processing gas supply device 400 is a processing gas for applying a specific process such as film formation or etching to the substrate S. The processing gas supply device 400 supplies the processing gas from the gas tank 410 constituting the processing gas supply means to the processing chamber 200. The gas tank 410 is provided with a processing gas supply source. The piping for processing the gas supply source is provided with an on-off valve, Mass flow controller. The process gas from the process gas supply is adjusted by the mass flow controller. The gas tank 410 is supplied. and, The gas tank 410 may have a plurality of processing gas supply sources. at this time, Even if the switching valves are provided in the piping of each processing gas supply source, Mass flow controller, The processing gas in which the downstream sides of the pipes are merged and mixed may be supplied from the gas tank 410. and, A specific configuration example of the gas box 410 will be described later. On the side wall of the processing container 202, Connecting the exhaust passage 240, The evacuation means 242 is connected to the exhaust pipe 201011121. Furthermore, A carry-out port 250 for performing carry-in of the substrate S between the transfer chambers 110 is provided on the side wall of the processing container 202, The carry-out port 250 is opened and closed by the above-described gate valve 102. In such a processing room 200, The processing gas is supplied from the processing gas supply device 400 to the processing chamber 200, And applying high frequency power to the upper electrode 300, Then, a plasma of the processing gas can be generated between the lower electrode 212 and the upper electrode 300. For the substrate S placed on the mounting table 210, Perform etching, Ashing, Plasma treatment such as film formation. The lower electrode 212 is supported by the support portion 216 via the insulating material 214. In the lower central portion of the support portion 216, A protective tube 218 extending through the opening portion 204 formed in the bottom wall of the processing container 202 and extending downward is provided. The lower surface of the protective tube 218 is supported by a support plate 220 having a diameter larger than that of the protective tube 218. The support plate 220 is attached to the protective tube 218 by means of plugging the inside of the protective tube 218. The lower end of the conductive expandable body 222 is fixed around the support plate 220. The upper end of the expandable body 222 is fixed to the opening edge of the opening portion 204 of the processing container 202. The expandable body 222 is provided with an inner space and an atmosphere side space of the protective tube 218 in an airtight compartment. Furthermore, The support body 220 is provided with a lifting mechanism of the drawing type. With the lifting mechanism, Lifting the support plate 22 0, Accordingly, the mounting table 210 can be moved up and down. The lower electrode 212 is connected to the support plate 220 via the conductive circuit 213. Accordingly, The lower electrode 212 passes through the guiding circuit 213, Support plate 220, The expansion body 222 is electrically connected to the processing container 202' to be grounded. -15- 201011121 Also, Even if the impedance adjusting portion is electrically connected to the lower electrode 212 of the mounting table 210 and the processing container 202. in particular, For example, the impedance adjusting portion is connected by a wire between the lower electrode 212 and the support plate 220. Accordingly, One end of the impedance adjusting portion is connected to the lower electrode, The other end is electrically connected to the bottom of the processing container 202 via the support plate 20 and the expandable body 2221. The impedance adjustment unit adjusts the impedance 値, It is possible to suppress generation of plasma between the upper electrode 300 of the high frequency power source and the side wall of the process container 202. In addition, The upper electrode 300 is attached to the inner side surface of the upper portion of the processing container 202 via the frame 302 formed of an insulating member. And the upper wall of the processing container 202 is suspended by, for example, a plurality of bolts 230. in particular, An insulator 232 is mounted on the hole formed in the upper wall of the processing container 202, The upper electrode 3 00 is fixed by inserting a bolt 230 into the insulator 232. Again, Even if the bolts whose surface is insulated are used. Furthermore, The upper electrode 3 00 also functions as a gas introduction portion that discharges a specific gas toward the surface of the FPD substrate S placed on the mounting table 210. It constitutes a so-called shower head. As shown in Fig. 2, the upper electrode 300 has a buffer chamber 330 for gas diffusion composed of a rectangular hollow portion. Below the upper electrode 300 (facing the opposite side of the lower electrode), A plurality of gas ejection holes 312 are evenly distributed, The gas is supplied from the gas discharge hole 312 to the entire processing chamber 200 by the downward flow. in particular, The upper electrode 300 is formed with a rectangular electrode plate 310 forming the gas ejection hole 312, The electrode support body 320 which is detachably supported on the upper surface side of the electrode plate 310 is provided in almost the same shape as the electrode plate 310. The electrode plate 310 and the electrode support body 320 are composed of aluminum whose surface is highly oxidized by the sun 201011121. and, The number or arrangement of the gas ejection holes 312 is not limited to those shown in Fig. 2. A rectangular space portion constituting the buffer chamber 330 is formed in the electrode support 320. The space portion is formed to open to the side (bottom surface) of the electrode support body 30. By mounting the electrode plate 3 1 0 on the bottom surface of the electrode support body 30, The above space department is closed. Furthermore, In the space II in which the buffer chamber 330 of the electrode support 320 is formed, Most of the suspension members 360 are suspended from the inner surface of the upper wall of the electrode support body 30 which forms the space. The suspension member 3 60 is made of aluminum or SUS (Stainless Used Steel) whose surface is anodized. The suspension member 360 is fixed to the upper wall of the support body 320 of the electrode by a structural member 364 such as a bolt. Furthermore, Even if the suspension member 366 is fixed to the electrode plate 310 by the above-described structural member 364, A flange portion is provided on the suspension member 360, The flange portion and the Φ electrode plate may be additionally fixed by a structural member such as a bolt or the like which is smaller than the structural member 3 64. As a result, Not only the electrode plate 310 is attached to the side (bottom surface) of the electrode support 320, Even in the buffer chamber 330 of the electrode support 320, it is suspended by the suspension member 3 60. Accordingly, even the large electrode plate 310 can be attached to the electrode support body 320 without bending or deformation due to its own weight. The buffer chamber 330 of the electrode support body 320 is partitioned by the annular (frame-shaped) partition wall 350. A plurality of chambers (for example, the first chamber 332 of the central portion and the second chamber 33 4 of the peripheral portion thereof). Furthermore, A plurality of gas introduction holes 3 26 are provided on the upper wall of the electrode support 320 -17-201011121. A branch pipe of the processing gas supply device 400 is connected to each of the gas introduction holes 326, The process gas from the process gas supply device 400 is controlled by flow rate and introduced into each chamber 3 32, 3 34 ° For example, As shown in Figure 2, The process gas from the gas box 410, The gas tank 410 is introduced into the first chamber 332 via the flow rate adjusting means 420 through the branching pipe 404 which is divided into two. The process gas passing through the branch pipe 406 of the other side is introduced into the second chamber 334 via the flow rate adjusting means 43 0. Is supplied to each room 332, The processing gas of 334 is controlled by the flow rate adjusting means 42 0, 43 0 is controlled by flow. As a result, By individual control from each room 332, 334 is directed toward the substrate S to be introduced into the flow of the process gas, Even if the substrate S is large in area, the gas flow rate in the entire region of the substrate S can be equalized. Further, the plasma treatment can be made uniform. (Example of piping configuration of the processing gas supply device) © Here, Referring to the picture, An example of the piping configuration of the processing gas supply device 400 will be described. Fig. 3 is a view showing the electrode support 320 at the time of removing the electrode plate 310 as seen from below. Fig. 4 is a schematic diagram showing the appearance of the processing gas supply device 40 0. Fig. 5 is a block diagram showing the piping configuration of the processing gas supply device 400. and, In Figure 3, In Figure 5, The piping configuration of the processing gas supply device 400 is schematically shown in a line graph. here, The case where five gas introduction holes -18 - 201011121 326 are formed in the electrode support 320 will be described. in particular, A gas introduction hole 326 is disposed in the middle of the electrode support body 320, A gas introduction hole 3 26 is disposed in each of the four corners. The five gas introduction holes 3 26 are symmetrically arranged in the longitudinal direction, Horizontal direction. The partition wall 350 shown in Fig. 3 is a specific example in the case where a frame shape similar to that of the buffer chamber 330 is formed. A φ sealing member such as a 〇-shaped ring of a non-drawing type is provided on the upper surface and the lower surface of the partition wall 350 of the area along the frame portion of the partition wall 350. If by such a zone next door 350, The buffer chamber 330 is partitioned into a first chamber 332 surrounding the central portion and a second chamber 334 surrounding the peripheral portion on the outer side of the first chamber 332. Such a partition wall 350 is held by being sandwiched between the inner surface of the upper wall of the electrode support 320 and the electrode plate 310, Therefore, if the electrode plate 310 is removed from the electrode support 3 20, Then, it can be easily exchanged with the partition wall 350 of a different ring shape. The partition wall 350 shown in Fig. 3 has a ring shape in which the area of the first chamber 332 is approximately 25 % of the entire area of the buffer chamber 33 0 . When it is separated by a partition wall 350 such as #, The first chamber 332 is introduced into the process gas from the central gas introduction hole 326. The second chamber 334 is introduced into the processing gas from each of the four gas introduction holes 3 26 near the four corners. When the process gas is introduced into the gas introduction hole 326 thus configured, The processing gas supply device 400 is configured as shown in FIG. 3, As shown in Figure 4. That is, The process gas supply pipe 412 shown in Fig. 3 is branched into a branch pipe 404 for introducing the process gas into the gas introduction hole 326 of the first chamber 332. Two of the branch pipes 406 for introducing the processing gas into the gas introduction holes 326 of the second chamber 334. In each branch pipe 404, 406 is provided with -19-201011121 flow adjustment means 420, 43 0. The branch pipe 404 is connected to the center gas introduction hole 326 via the flow rate adjusting means 420. Furthermore, The branch pipe 406 is divided into four on the downstream side of the flow rate adjusting means 430. Each of the branch pipes 406a to 406d is connected to four gas introduction holes 3 26 near the four corners. in particular, As shown in Figure 4, The branch pipe 40 6 is on the downstream side of the flow regulator 43 4 , And divided into two, Dividing one of the pipes into a divergent pipe 406a, 406b, Divide the other pipe into a divergent pipe 40 6c, 40 6d. It is not limited to the composition of such piping, The branch pipe 406 is even in the switching valve 432, The downstream side of the flow rate adjuster 434 may be divided into four in a radial manner. The traffic adjustment means 420, 430 are each provided by, for example, an on-off valve 422 disposed on the upstream side, 423 and a flow regulator 424 disposed on the downstream side, 434 constitutes. According to the flow adjustment means 420, 430, Can be controlled individually from Room 1 332, The second chamber 334 is introduced into the flow rate of the process gas in the processing chamber 200. The gas box 410 is configured as shown in Fig. 5, for example. here, The gas supply pipes 510A to 510D are configured to supply four kinds of gases (the first gas, Second gas, The third gas, The case of an inert gas is exemplified. Among these gases, The first gas, Second gas, The third gas is, for example, a fluorocarbon-based fluorine compound as an etching gas, CF4, C4F6, C4F8, CxFy gas such as C5F8. In these gases, A gas containing, for example, 02 gas as a scale for controlling the reaction product of the CF system may be contained. and, The inert gas can be used as a rare gas such as a carrier gas (for example, Ar gas) 201011121, It is also possible to use N2 gas or the like as, for example, a flushing gas. And, The number of gas supply sources is not limited to the example shown in Fig. 5. Even if one or two, for example, Furthermore, it is also possible to set it to four or more. As a result, The first gas used as an etching gas, The second gas, The third gas gas supply pipes 51 0A to 51 0C have the same configuration. That is, Each of the gas supply pipes 5 10A to 510C is provided with respect to each of the first gas bodies, Second gas, a gas supply source 520 A to 520C of the third gas, Each of the gas supply sources 52A to 52C is connected to the processing gas supply pipe 406 via the gas supply pipes 510A to 510C. The gas supply pipes 510A to 510C of the gas supply pipes 510A to 510C are provided with flow controllers for adjusting the flow rates of the gases from the gas supply sources 520A to 520C. For example, mass flow controllers (MFC) 540A ~ 540C. Here, the mass flow controllers (MFC) 540A to 540C may be different even if the respective capacities are different. A first shutoff valve (upstream side shutoff valve) 5 3 0A to 530C is provided on each of the upstream side Φ and the downstream side of each of the mass flow controllers (MFC) 540A to 540C, The second shut-off valve (downstream side shutoff valve) 5 50A to 550C. By closing the first shut-off valves 530A to 530C, Both of the second shut-off valves 55 0A to 550C, Then, the flow of gas in each mass flow controller (MFC) 540A to 540C can be blocked. Accordingly, For example, the gas flow rate to the respective mass flow controllers (MFC) 5 40 A to 540C can be adjusted to zero. and, As shown in Figure 5, Between the gas supply sources 520A to 520C and the first shutoff valves (upstream side shutoff valves) 530A to 530C, Manual valves 522A to 522C are provided. and, Between the manual valves 522A to 522C and the first -21 - 201011121 shutoff valves (upstream side shutoff valves) 530A to 53 0C, Although there is no picture, But even if a pressure reducing valve (regulating valve) is provided, A pressure gauge (PT) is also available. In addition, Inert gas (for example, Gas supply pipe of N2 gas) 51 0D is provided with a gas supply source 520D of an inert gas, The mass flow controller (MFC) 540A to 540C that can supply the inert gas from the gas supply source 520D to the other gas supply pipes 510A to 510C, The second shutoff valves 550A to 550C are supplied into the processing chamber 200. Accordingly, For N2 gas, mass flow controller (MFC) 540A~540C can be used. Therefore, it is not necessary to separately set the mass flow controller (MFC). and, It is possible to supply the processing to the processing chamber 200 via the processing gas supply piping 402 without passing through the respective gas supply pipes 510A to 510C. in particular, The inert gas source 520D is connected to the process gas supply pipe 402 via the gas supply pipe 51 0D via the second shutoff valve 55 0D. Further, each of the shutoff valves 560A to 560C is connected between the first shutoff valves 530A to 530C and the mass flow controllers (MFC) 540A to 540C of the respective gas supply pipes 510A to 510C. Furthermore, The gas supply pipe 51 0D is also the same as the other gas supply pipes 510A to 510C. Manual valve 522D is connected, The first shut-off valve (upstream side shut-off valve) 5 3 0D. and, When the flow rate of the inert gas is controlled by the mass flow controller (MFC) 540A to 540C, The above-described shutoff valves 5 60A to 560C may be controlled as the first shutoff valve (upstream side shutoff valve) provided on the upstream side of the mass flow controller (MFC). In the processing gas supply device 400 thus constituted, By controlling each valve and MFC in the gas tank 410, The 201011121 process gas mixed at a specific gas flow rate is supplied to the process chamber 200 through the process gas supply pipe 402. at this time, According to the flow adjustment means 420, 430, Can be controlled individually from Room 1 332, The second chamber 334 is introduced into the flow rate of the process gas in the processing chamber 200. E.g, In order to supply gas from the upper electrode 300 toward the FPD substrate S, It is necessary to connect the central gas to the branch pipe 404 of the hole 326, The pressure in the tube of the tube 40 6 which is connected to the four gas introduction holes 3 26 near the four corners is uniform. but, The upper electrode 300 is large for performing plasma treatment on the substrate S for FPD. The length of the branch pipe 404 connected to the first chamber 332 of the center portion is shorter than the branch pipe 406 of the second chamber 343 connected to the peripheral portion. Therefore, the conductivity (ease of flow) also becomes large. therefore, The flow regulator 424 must be adjusted, 434, The flow rate of the process gas flowing into the branch pipe 404 is made smaller than the flow rate of the process gas flowing into the branch pipe 406, And make each branch pipe 404, The pressure inside the tube of 40 6 becomes uniform. φ and, For the partition 350 of the upper electrode 300, It is not limited to those shown in Fig. 3. E.g, Even if the processing gas supply device 400 is applied to the upper electrode 300 of the partition wall 350 shown in Fig. 6, it is also possible. The partition wall 350 shown in Fig. 6 has a ring shape in which the area of the first chamber 332 is wider than that of the partition wall 350 shown in Fig. 3. If by the partition 350 shown in Fig. 6, The area of the first chamber 332 becomes approximately 50% of the entire area of the buffer chamber 330. Furthermore, As shown in the partition 350 shown in Fig. 6, Set to each compartment 332, The number of gas introduction holes 326 -23 to 201011121 included in the region of 334 is the same as that of the case shown in Fig. 3, Therefore, it is not necessary to change the piping configuration of the processing gas supply device 400. It is possible to change only the sectional area of the buffer chamber 330. however, The above traffic regulator 424, 434 can also be constructed, for example, by a mass flow controller. but, When the flow regulator is constituted by the mass flow rate, At 434, Mass flow controllers 540 A to 540C are also disposed in the gas tank 410, Therefore, the downstream side of the gas tank 410 (more downstream than the mass flow controllers 540A to 540C) exceeds the atmospheric pressure. therefore, If the piping on the downstream side of the gas tank 410 is damaged, Then there is a gas leaking from the inside of the pipe to the atmosphere. Therefore, in order to prevent this, The piping must be set to a double layer structure, etc. I have to worry about the piping structure. here, In this embodiment, As the flow regulator 424, 43 4 is made up of a fixed throttle such as a needle valve. Accordingly, the downstream side of the gas tank 410 becomes below atmospheric pressure. Even if the piping damages the gas, it will not leak into the atmosphere. then, The flow regulator 424 is configured by a fixed throttle valve, At 434, As above, The flow rate of the process gas flowing into the branch pipe 404 is smaller than the flow rate of the process gas flowing into the branch pipe 40 6 . It is fixed while reducing the opening degree of the fixed throttle. E.g, When the opening degree of the fixed throttle valve is set to 〇, And will be all set to 10, The conductivity of the branch pipe 404 and the branch pipe 406 becomes 3: 10 ways, Adjustment constitutes each flow regulator 424, 434 fixed throttle valve opening degree. but, As a result, when the opening degree of the fixed throttle valve of the flow regulator 424 constituting the branch pipe 404 is narrowed, For example, when a large flow rate of processing gas is supplied from the central portion of the upper electrode 201011121 3 00 and the processing of the FPD substrate S is to be performed, There is no way to ensure sufficient conductivity, etc. The problem of the most suitable processing gas supply cannot be performed in response to the processing of the FPD substrate S. therefore, The bypass pipe, for example, not passing through the flow regulator 424, is disposed in parallel in the flow regulator 424, By switching the flow of the process gas to the bypass piping, It is preferable to supply a large flow rate of the treatment gas through the bypass piping. Φ below, A specific example of such a piping configuration will be described in detail with reference to the drawings. Fig. 7 is a view showing a specific example of a piping structure including a bypass pipe. here, In order to provide the bypass pipe 404A in parallel to the flow regulator 424 of the branch pipe 404. The bypass pipe 404A is provided with an on-off valve 42 2A, It is possible to switch between the case where the process gas passing through the branch pipe 404 flows through the flow rate adjuster 424 and the case where the bypass pipe 4 4 4 A flows. at this time, For example, when the opening degree of the fixed throttle is closed, it is set to 〇 #, And will be opened to 10, The ratio of the conductivity of the branching pipe 404 to the branching pipe 40 6 is 3: 10 ways, First adjust the fixed configuration, each flow regulator 424, The opening degree of the fixed throttle of 43 4 . and, The degree of opening of the fixed throttle valve is not limited to the above. The length of the dissimilar piping 404 and the branch piping 406 are determined in advance, and the like. The ratio of the pressure in the tube of the branch pipe 404 and the branch pipe 40 6 is determined to be a uniform ratio of conductivity. It is preferable to adjust the opening degree of the fixed throttle in such a manner as to be the ratio of the conductivity. When the processing gas supply device 400 having such a pipe is provided, For example, when the processing gas is to be uniformly supplied from the central region of the upper electrode 300 and the peripheral region thereof to -25 - 201011121, Opening the on-off valve 432, And opening and closing the switch valve 422 to close the switch valve 422A, According to this, the process gas flows into the branch pipe 406 through the flow regulator 434, Further, the processing gas may flow into the branch pipe 404 via the flow rate adjuster 424. In this regard, When a large flow rate of processing gas is to be supplied from only the central portion of the upper electrode 300, Closing the switching valve 432, And closing the on-off valve 422 and opening the on-off valve 422A, Accordingly, the manifold gas 406 does not flow into the processing gas, If the bypass gas is passed through the branch pipe 404A through the bypass pipe 404A, Even when the opening degree of the fixed throttle valve of the flow regulator 42 4 constituting the branch pipe 404 is reduced and fixed, It is also possible to supply a large flow rate of the process gas from the central portion of the upper electrode 300 via the bypass pipe 404A. and, In the branching pipe 40 6 in the piping configuration shown in Fig. 7, For example, as shown in Figure 8, Even if an inert gas (such as Ar gas, The inert gas supply pipe 408 of He gas or the like may be connected between the switching valve 432 and the flow rate adjuster 434. at this time, In the inert gas supply pipe 4 0 8 set the on-off valve 4 0 9, It is switched to supply only the inert gas from the peripheral region of the upper electrode 300. That is, By closing the switching valve 432 and opening the switching valve 409, Only the inert gas can be supplied from the peripheral region of the upper electrode 300. Accordingly, By supplying the process gas from the central region of the upper electrode 300, And supplying inert gas from the surrounding area, The uniformity of the processing of the FPD substrate can be improved. -26- 201011121 The inert gas is supplied directly to the inert gas supply pipe 408 shown in Fig. 7 even if the gas supply pipe 51 0D which is an inert gas in the gas tank 410 shown in Fig. 5 is directly supplied. Furthermore, Even if a gas supply flow path is provided in a system different from the gas supply pipes 510A to 510D shown in Fig. 5, It may be supplied directly to the inert gas supply pipe 408. . In addition, in the case of providing the bypass pipe 404A only in the branch pipe 404, it is not limited to φ, and not only the branch pipe 404 but also the branch pipe 406 is provided in the seventh and eighth figures. Bypass piping is also available. At this time, as shown in FIG. 9, in the branch pipe 04, a plurality of (for example, two) bypass pipes 404A and 404B are provided in parallel to the flow rate adjuster 424, and the bypass pipes 404 A' 404B are provided. Even if the opening and closing valves 422A and 422B and the flow rate adjusters 424A and 424B are provided. Further, in the branch pipe 406, a plurality of (for example, two) bypass pipes 068A, 406B are provided in parallel to the flow rate adjuster 434, and the bypass valves 406A, 406B are provided with switching valves 432A, 432B, flow regulators 434A, 434B may also be used. Then, the opening degree of the fixed throttle of the flow regulators 42 4, 424 A, 42 4B is fixed to different opening degrees, and the conductivity ratio is adjusted, thereby controlling the respective switching valves 422, 422A. The combination of the pipes circulated by 422B flows the majority of the flow into the branch pipe 404.
同樣地，即使針對流量調節器43 4、434A、43 4B之 固定節流閥之開閥度，固定於各不相同之開閥度而調整傳 導率比，依此可以利用控制各開關閥432、432A、432B -27- 201011121 所流通之配管的組合將多數種類之流量流入分歧配管 406 ° 具體而言，當將固定節流閥之開閥度關閉時設爲0 時，並且將全開之時設爲10時，將流量調整器424、 424A ' 424B之固定節流閥之開閥度設爲例如1〇: 5: 2.5。再者，流量調整器434、43 4A、43 4B之固定節流閥 之開閥度也設爲例如1〇: 5: 2.5。依此，可以使分歧配管 404和流通分歧配管4〇6之處理氣體之傳導率比之組合吏 參 多。 例如，若以處理氣體在分歧配管404中僅通過流量調 整器424A之方式，控制成關閉開關閥422、422B打開開 關閥422A，並且以處理氣體在分歧配管406中僅通過流 量調整器434之方式，控制成關閉開關閥43 2A、432B而 打開開關閥432時，則可以將分歧配管404和分歧配管 406之傳導率比設爲5: 10。此時，以處理氣體在分歧配 管404僅通過流量調整器424A、424B之方式，控制成關 ❹ 閉開關閥422而打開開關閥422A、422B，依此亦可以將 分歧配管4 04和分歧配管406之傳導率比設爲7.5: 10。 如此一來，藉由控制各開關閥，將處理氣體流通至所 欲之配管，利用此處理氣體所流通之配管的組合，則可以 將所欲流量之處理氣體從各分歧配管供給至中央部之第1 室332、周邊部之第2室334。依此，可以因應基板S之 處理控制被供給至基板S之中央部區域和周邊部區域之處 理氣體流量之均勻性。 -28- 201011121 再者，在上部電極300之各氣體導入孔326即使設置 整流構件亦可，該整流構件係用以將被吐出至在緩衝室 330開口之吐出口 327的氣體之流動變更成水平方向之整 流構件。例如，第10圖A至第10圖B所示般，從吐出 口 3 27之周圍以多數（例如4個）之懸掛構件329懸掛圓板 狀之整流構件328。再者，如第11圖A、第11圖B所示 般，即使將形成有從中央朝水平方向延伸之多數孔的圓板 φ 狀整流構件328安裝於各氣體導入孔326之吐出口 327亦 可。並且，在第10圖A、第11圖A所示之電極板310省 略氣體噴出孔3 1 2。 如此一來，從各氣體導入孔3 26被導入之處理氣體因 藉由整流構件328之作用朝向水平方向被供給，故可以使 緩衝室3 30內更寬範圍均勻地擴散。依此，可以使處理氣 體自電極板310之氣體噴出孔312更均勻地予以噴出。 尤其，因本實施型態之整流構件3 28爲可以設置在每 參 各氣體導入孔326之吐出口 327般之小型構成，故即使將 緩衝室330內以區隔壁3 50區隔成多數室33 2、3 34之 時，亦可以設置成不會造成妨礙。因此，不管區隔壁350 之形狀（例如，第3圖、第6圖等），亦可以在各氣體導入 孔326之吐出口 327設置整流構件328。而且，如本實施 型態所示般，在藉由區隔壁350所區隔之緩衝室330之各 室332、334內之各個中，可以使自各氣體導入孔326所 導入至處理氣體擴散至更寬範圍。如此之整流構件3 28之 形狀或大小也並不限定於上述。例如，整流構件328之形 • 29 - 201011121 狀或大小即使因應各氣體導入孔326之配置或氣體噴出孔 312之配置、區隔壁350之形狀等而予以決定亦可。 並且，本實施型態中之區隔壁350雖然針對設置成容 易更換之情形予以說明，但是並不限定於此’即使區隔壁 350以多數螺栓或螺絲固定在電極支撐體320之上壁亦 可。 以上，雖然係一面參照附件圖面一面針對本發明之最 佳實施型態予以說明，但是本發明當然並不限定於此例。 春 若爲本項技藝者在記載於申請專利範圍之範疇內應該能夠 思及各種變更例或是修正例，針對該些變更例或修正例當 然也屬於本發明之技術範圍。 例如，在本實施型態中，雖然針對本發明適用於將下 部電極接地，僅對上部電極施加高頻電力之類型的電漿處 理裝置之情形予以說明，但是並非限定於此。例如，即使 適用於對上部電極和下部電極之雙方施加高頻電力之類型 的電漿處理裝置亦可，再者，即使適用於僅對下部電極施 @ 加例如高頻不同之兩種類高頻電力之類型的電漿處理裝置 亦可。 [產業上之利用可行性] 本發明可適用於對FPD用基板施予特定處理之電漿 處理裝置及使用於此之處理氣體供給裝置。 【圖式簡單說明】 -30- 201011121 第1圖爲本發明之實施型態所涉及之電漿處理裝置之 外觀斜視圖。 第2圖爲同實施型態中之處理室之剖面圖。 第3圖爲用以說明處理氣體供給裝置之配管構成例之 圖式。 第4圖爲表示第3圖所示之處理氣體供給裝置之外觀 槪略的斜視圖。 • 第5圖爲表示第3圖所示之配管構成的方塊圖。 第6圖爲用以說明適用於具備其他區隔壁之上部電極 之時的處理氣體供給裝置之配管構成例的圖式。 第7圖爲表示在同實施形態中設置旁通配管之流量調 整手段之具體例的方塊圖。 第8圖爲表示在同實施形態中設置旁通配管之流量調 整手段之其他具體例的方塊圖。 第9圖爲表示在同實施形態中設置旁通配管之流量調 • 整手段之又一其他具體例的方塊圖。 第10圖A爲表示被安裝在上部電極之各氣體導入孔 之整流構件之具體例的縱剖面圖。 第10圖B爲第10圖A所示之A-A剖面圖。 第11圖A爲表示被安裝在上部電極之各氣體導入孔 之整流構件之其他具體例的縱剖面圖。 第11圖B爲第11圖A所示之B-B剖面圖。 【主要元件符號說明】 -31 - 201011121 100 :電漿處理裝置 1 0 2 :閘閥 1 0 4 :閘閥 1 0 6 :聞閥 1 10 :搬運室 120 :裝載鎖定室 130:基板搬出搬入機構 140 :指示器 1 42 :卡匣 200 :處理室 202 :處理容器 204 :開口部 206 :整合器 2 0 8 :高頻電源 210 :載置台 212 :下部電極 21 3 :導電路 214 :絕緣材 216 :支撐部 218 :保護管 2 2 0 :支撐板 222 :伸縮體 23 0 :螺栓 232 :絕緣體 201011121 240 :排氣路 242 :真空排氣手段 250 :搬入搬出口 300 :上部電極 3 02 :框體 3 10 :電極板 3 1 2 :氣體噴出孔 φ 3 20 :電極支撐體 3 26 :氣體導入孔 3 2 7 :吐出孔 3 28 :整流構件 329 :懸掛構件 3 3 0 :緩衝室 3 32 :第1室（中央部室） 334 :第2室（周邊部室） Φ 350 :區隔壁 360 :懸掛構件 364 :締結構件 400 :處理氣體供給裝置 402 :處理氣體供給配管 404、406 :分歧配管 404A、404B :旁通配管 406a〜406d:分歧配管 406A、406B :旁通配管 -33 201011121 408 :惰性氣體供給配管 409 :開關閥 410 :氣體箱 420、430 :流量調整手段 422 、 422A 、 422B :開關閥 424、424A、424B:流量調整器（固定節流閥） 430 :流量調節手段 43 2、432A、432B :開關閥 434、434A、434B:流量調整器（固定節流閥） 510A〜510D :氣體供給配管 520A〜520D:氣體供給源 522A〜522D :手動閥 53 0A〜530D :第1斷流閥 540A〜540C:質量流量控制器 550A〜550D:第2斷流閥 560A〜560C:斷流閥 S :基板（FPD用基板）Similarly, even if the valve opening degrees of the fixed throttles of the flow regulators 43 4 , 434A , and 43 4B are fixed to different valve opening degrees to adjust the conductivity ratio, the respective switching valves 432 can be controlled. 432A, 432B -27- 201011121 The combination of the piping to be circulated flows most types of flow into the divergent piping 406 °. Specifically, when the opening degree of the fixed throttle is closed, it is set to 0, and will be fully opened. At 10 o'clock, the valve opening degree of the fixed throttle of the flow regulators 424, 424A' 424B is set to, for example, 1 〇: 5: 2.5. Further, the valve opening degree of the fixed throttle of the flow rate adjusters 434, 43 4A, 43 4B is also set to, for example, 1 〇: 5: 2.5. According to this, the conductivity of the process gas of the branch pipe 404 and the branch pipe 4〇6 can be made more than the combination. For example, if the process gas is passed through the flow regulator 424A only in the branch pipe 404, the switch-off valves 422, 422B are controlled to open the switch valve 422A, and the process gas is passed through the flow regulator 434 only in the branch pipe 406. When the opening and closing valves 43 2A and 432B are closed and the opening and closing valve 432 is opened, the ratio of the conductivity of the branching pipe 404 and the branching pipe 406 can be set to 5:10. At this time, the process gas is controlled to close the on-off valve 422 by opening the on-off switch valve 422 so that the branch pipe 404 passes only the flow rate adjusters 424A and 424B, and the branch pipe 044 and the branch pipe 406 can be opened accordingly. The conductivity ratio is set to 7.5:10. In this way, by controlling each of the on-off valves, the process gas is circulated to the desired pipe, and the combination of the pipes through which the process gas flows can supply the process gas of the desired flow rate from the branch pipes to the center portion. The first chamber 332 and the second chamber 334 of the peripheral portion. Accordingly, the uniformity of the gas flow rate to be supplied to the central portion and the peripheral portion of the substrate S can be controlled in accordance with the processing of the substrate S. -28-201011121 Further, even if a rectifying member is provided in each of the gas introduction holes 326 of the upper electrode 300, the rectifying member is configured to change the flow of the gas discharged to the discharge port 327 opened in the buffer chamber 330 to a level. Directional rectifying member. For example, as shown in Fig. 10 to Fig. 10B, a disk-shaped rectifying member 328 is suspended from a plurality of (e.g., four) suspension members 329 around the discharge port 3 27 . Further, as shown in FIG. 11A and FIG. 11B, even if a circular plate φ-shaped flow regulating member 328 having a plurality of holes extending in the horizontal direction from the center is attached to the discharge port 327 of each gas introduction hole 326, can. Further, the gas ejection holes 3 1 2 are omitted in the electrode plate 310 shown in Fig. 10A and Fig. 11A. In this manner, since the processing gas introduced from each of the gas introduction holes 326 is supplied in the horizontal direction by the action of the rectifying member 328, it is possible to uniformly spread the inside of the buffer chamber 390 in a wider range. Accordingly, the processing gas can be more uniformly ejected from the gas ejection holes 312 of the electrode plate 310. In particular, since the rectifying member 3 28 of the present embodiment has a small configuration that can be provided in the discharge port 327 of each of the gas introduction holes 326, even if the partition wall 330 is partitioned into a plurality of chambers 33 in the buffer chamber 330. 2, 3 34, can also be set so as not to cause obstacles. Therefore, regardless of the shape of the partition wall 350 (for example, Fig. 3, Fig. 6, etc.), the rectifying member 328 may be provided at the discharge port 327 of each of the gas introduction holes 326. Further, as shown in the present embodiment, in each of the chambers 332 and 334 of the buffer chamber 330 partitioned by the partition wall 350, the gas introduced from the respective gas introduction holes 326 can be diffused to the processing gas. Wide range. The shape or size of such a rectifying member 3 28 is not limited to the above. For example, the shape or size of the rectifying member 328 may be determined depending on the arrangement of the gas introduction holes 326, the arrangement of the gas ejection holes 312, the shape of the partition wall 350, and the like. Further, the partition wall 350 in the present embodiment is described as being easily replaced, but the present invention is not limited thereto. Even if the partition wall 350 is fixed to the upper wall of the electrode support 320 by a large number of bolts or screws. Although the above description of the preferred embodiment of the present invention has been made with reference to the attached drawings, the present invention is of course not limited to this example. In the context of the scope of the patent application, it is to be understood that those skilled in the art can recognize various modifications or modifications, and such modifications or modifications are of course within the technical scope of the present invention. For example, in the present embodiment, the present invention is applied to a case where the lower electrode is grounded and only a plasma processing apparatus of a type in which high frequency power is applied to the upper electrode is described, but the present invention is not limited thereto. For example, even if it is applied to a plasma processing apparatus of a type that applies high-frequency power to both the upper electrode and the lower electrode, it is applicable to, for example, applying only two types of high-frequency power different in high frequency to the lower electrode. A plasma processing device of the type may also be used. [Industrial Applicability] The present invention is applicable to a plasma processing apparatus that applies a specific treatment to a substrate for FPD, and a processing gas supply apparatus used therefor. [Brief Description of the Drawings] -30- 201011121 Fig. 1 is a perspective view showing the appearance of a plasma processing apparatus according to an embodiment of the present invention. Figure 2 is a cross-sectional view of the processing chamber in the same embodiment. Fig. 3 is a view for explaining an example of the piping configuration of the processing gas supply device. Fig. 4 is a perspective view showing the appearance of the processing gas supply device shown in Fig. 3. • Fig. 5 is a block diagram showing the piping configuration shown in Fig. 3. Fig. 6 is a view for explaining an example of a piping configuration of a processing gas supply device which is applied to an electrode having an upper portion of a partition wall. Fig. 7 is a block diagram showing a specific example of a flow rate adjusting means for providing a bypass pipe in the same embodiment. Fig. 8 is a block diagram showing another specific example of the flow rate adjusting means for providing the bypass pipe in the same embodiment. Fig. 9 is a block diagram showing still another specific example of the flow rate adjustment means for providing a bypass pipe in the same embodiment. Fig. 10A is a longitudinal cross-sectional view showing a specific example of a rectifying member attached to each of the gas introduction holes of the upper electrode. Fig. 10B is a cross-sectional view taken along line A-A of Fig. 10A. Fig. 11A is a longitudinal cross-sectional view showing another specific example of a rectifying member attached to each of the gas introduction holes of the upper electrode. Fig. 11B is a cross-sectional view taken along line B-B of Fig. 11A. [Description of main component symbols] -31 - 201011121 100 : Plasma processing device 1 0 2 : Gate valve 1 0 4 : Gate valve 1 0 6 : Smell valve 1 10 : Transfer chamber 120 : Load lock chamber 130 : Substrate carry-in/out mechanism 140 : Indicator 1 42 : cassette 200 : processing chamber 202 : processing container 204 : opening portion 206 : integrator 2 0 8 : high-frequency power source 210 : mounting table 212 : lower electrode 21 3 : conductive circuit 214 : insulating material 216 : support Portion 218: Protection tube 2 2 0 : Support plate 222 : Expansion body 23 0 : Bolt 232 : Insulator 201011121 240 : Exhaust path 242 : Vacuum evacuation means 250 : Loading and unloading port 300 : Upper electrode 3 02 : Frame 3 10 : electrode plate 3 1 2 : gas ejection hole φ 3 20 : electrode support body 3 26 : gas introduction hole 3 2 7 : discharge hole 3 28 : rectifying member 329 : suspension member 3 3 0 : buffer chamber 3 32 : first chamber (central chamber) 334: second chamber (peripheral chamber) Φ 350: partition wall 360: suspension member 364: structural member 400: processing gas supply device 402: processing gas supply piping 404, 406: branch piping 404A, 404B: bypass Pipings 406a to 406d: branch piping 406A, 406B: bypass piping - 33 201011121 408 : Gas supply pipe 409: On-off valve 410: Gas tanks 420, 430: Flow rate adjustment means 422, 422A, 422B: On-off valves 424, 424A, 424B: Flow rate adjuster (fixed throttle valve) 430: Flow rate adjustment means 43 2. 432A, 432B: switching valves 434, 434A, 434B: flow regulators (fixed throttle valves) 510A to 510D: gas supply pipes 520A to 520D: gas supply sources 522A to 522D: manual valves 53 0A to 530D: first interruption Valves 540A to 540C: mass flow controllers 550A to 550D: second shutoff valves 560A to 560C: shutoff valve S: substrate (substrate for FPD)