KR20140123905A - Vacuum processing device and valve control method - Google Patents
Vacuum processing device and valve control method Download PDFInfo
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- KR20140123905A KR20140123905A KR1020140039891A KR20140039891A KR20140123905A KR 20140123905 A KR20140123905 A KR 20140123905A KR 1020140039891 A KR1020140039891 A KR 1020140039891A KR 20140039891 A KR20140039891 A KR 20140039891A KR 20140123905 A KR20140123905 A KR 20140123905A
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- exhaust passage
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- 238000012545 processing Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 10
- 230000010485 coping Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 42
- 210000002381 plasma Anatomy 0.000 description 17
- 230000001276 controlling effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
Description
The present invention relates to a vacuum apparatus and a valve control method for performing plasma processing or the like on an object to be processed.
In the FPD (flat panel display) manufacturing process, various plasma processes such as plasma etching, plasma ashing, and plasma film formation are performed on the FPD substrate. As such a plasma processing apparatus, for example, a parallel plate type plasma processing apparatus and an inductively coupled plasma (ICP) processing apparatus are known. These plasma processing apparatuses are configured as vacuum apparatuses for performing processing by reducing the pressure in the processing vessel to a vacuum state.
In recent years, processing vessels have also become larger in order to process large FPD substrates. For this reason, it is general that a plurality of vacuum pumps for decompressing and exhausting the inside of the processing container are disposed. Adaptive pressure control valves (hereinafter referred to as " APC valves ") are provided on the upstream side in the exhaust direction of these vacuum pumps to adjust the pressure in the processing vessel by automatically adjusting the conductance of the exhaust path. For example, in the plasma etching apparatus, there is adopted a method of controlling the conductance of the exhaust path by the APC valve at a desired process pressure while supplying a process gas of a certain flow rate to the process container by the mass flow controller at the time of the process .
As a conventional technique relating to pressure control of a vacuum device,
Conventionally, when an APC valve is disposed in each of a plurality of exhaust passages, one of them is used as a master valve, and the other is configured as a slave valve. Each slave valve operates in conjunction with the master valve. That is, all of the APC valves are configured to perform opening and closing operations in synchronization with each other.
However, as a characteristic of the APC valve, when the degree of opening of the valve exceeds a certain level, the amount of change in conductance per 1% of opening degree becomes large, and the controllability of the pressure is deteriorated. Therefore, normally, the upper limit of the opening degree of the APC valve is set to about 30%. As a result, the effective exhaust velocity of the vacuum pump is restricted by the opening degree of the APC valve, so that even if a vacuum pump having a large exhausting capability is used, sufficient performance can not be obtained. For this reason, in order to obtain a required exhaust speed, a vacuum pump having a larger exhausting capability must be used, which is one cause of increasing the apparatus cost. For example, a plasma etching process is known which requires a large amount of etching gas to improve the etching rate. In this plasma etching process, in the case of the multiple system exhaust by combination of the conventional APC valve and the vacuum pump, since the APC valves are set to the same opening degree in synchronization, the conductance of the exhaust system is sufficiently increased I could not. For this reason, it is difficult to use the process gas in a large flow amount and large discharge amount under high vacuum conditions, or it is necessary to replace the specification of the vacuum pump with a higher exhaust capability.
Accordingly, it is an object of the present invention to provide a corresponding vacuum device for a process using a process gas at a large flow rate.
A vacuum apparatus according to the present invention is a vacuum apparatus comprising: a processing container capable of holding an object to be processed and capable of vacuum-holding the inside thereof; a gas supply source for supplying a processing gas into the processing container through a gas supply path; A flow rate regulating device for regulating the supply flow rate of the process gas, and a pressure detecting device for detecting the pressure in the process container. The vacuum apparatus according to the present invention further includes a plurality of first exhaust passages connected to the processing container and provided with a first valve, a plurality of second exhaust passages connected to the processing container and provided with a second valve, An exhaust device connected to the first exhaust passage or the second exhaust passage, and an exhaust valve connected to the first exhaust passage or the second exhaust passage, And a control unit for controlling the valve and the second valve, respectively. Further, in the vacuum apparatus of the present invention, the first valve is a valve for varying the conductance of the first exhaust passage, and the second valve is a valve for switching the opening and closing of the second exhaust passage. In the vacuum apparatus according to the present invention, the control unit may include: an opening degree adjusting unit that collectively adjusts the opening degree of the first valve provided in each of the plurality of first exhaust paths; Closing switching unit for switching the opening and closing of the second valve in a centralized manner.
In the vacuum apparatus of the present invention, one exhaust device may be connected to both the first exhaust passage and the second exhaust passage.
In the vacuum apparatus according to the present invention, the control unit may set the exhaust gas flow rate when the conductance is adjusted by the first valve in the first exhaust passage to be V11, and determine the opening degree of the first valve in the first exhaust passage And the exhaust gas flow rate in the second exhaust passage is V2, the following expression (1) is satisfied:
(Where n represents the number of the first exhaust passage and m represents the number of the second exhaust passage)
The opening of the first valve and the opening and closing of the second valve may be adjusted.
In the vacuum device of the present invention, as the second valve, a valve for varying the conductance of the second exhaust passage may be used and only the opening and closing operation may be performed.
The vacuum apparatus of the present invention may be an etching apparatus that performs etching with respect to an object to be processed.
In the vacuum apparatus of the present invention, the object to be processed may be a substrate for FPD.
The valve control method of the present invention is a valve control method in a vacuum apparatus. In the valve control method of the present invention, it is preferable that the vacuum apparatus further comprises: a processing container that accommodates the object to be processed and can hold the object in vacuum; a gas supply source that supplies a process gas through the gas supply path into the process container; A flow rate adjusting device provided in the supply passage for adjusting the supply flow rate of the process gas and a pressure detecting device for detecting the pressure in the process container. Further, in the valve control method of the present invention, the vacuum apparatus may further include: a plurality of first exhaust passages connected to the processing container and provided with a first valve; a plurality of first exhaust passages connected to the processing container, A second exhaust passage, and an exhaust device connected to the first exhaust passage or the second exhaust passage. Further, in the valve control method according to the present invention, the vacuum apparatus may further comprise: a control unit for controlling the pressure of the processing container based on the detected pressure value and the set pressure value detected by the pressure detecting device, And a control unit for controlling the valve and the second valve, respectively. In the valve control method of the present invention, the first valve may be a valve for varying the conductance of the first exhaust passage, the second valve may be a valve for switching the opening and closing of the second exhaust passage, The control unit includes an opening degree adjusting unit that collectively controls the opening degree of the first valve provided in each of the plurality of first exhaust paths, an open / close control unit that collectively controls opening and closing of the second valve provided in each of the plurality of second exhaust paths And a switching unit. The valve control method according to the present invention includes the steps of making all openings of all the second valves in synchronism with each other and opening all of the first valves in synchronism with each other based on a detected pressure value and a set pressure value detected by the pressure detecting device, And the step of adjusting the opening degrees of the first and second flow paths in synchronization with each other.
The valve control method of the present invention is characterized in that the exhaust gas flow rate when the conductance is adjusted by the first valve in the first exhaust passage is V11 and the opening degree of the first valve in the first exhaust passage is set as the entire opening (V12), and the flow rate of the exhaust gas in the second exhaust passage is V2, the following equation (1) is obtained.
(One)
(Where n represents the number of the first exhaust passage and m represents the number of the second exhaust passage)
The opening of the first valve and the opening and closing of the second valve may be adjusted.
According to the present invention, in a large-sized vacuum apparatus, it is possible to perform a process using a large amount of process gas while suppressing the cost of the apparatus.
1 is a cross-sectional view schematically showing a configuration of a plasma etching apparatus according to
Fig. 2 is a plan view of the bottom wall of the plasma etching apparatus of Fig. 1,
3 is a block diagram showing a hardware configuration of a control unit of the plasma etching apparatus of FIG.
4 is a block diagram showing a hardware configuration of the module controller in Fig. 3,
5 is a functional block diagram showing the functional configuration of the module controller in Fig. 3,
6 is a characteristic diagram showing the relationship between the flow rate of the process gas and the pressure for explaining the operation of the present invention,
7 is a schematic diagram showing a simplified configuration of the plasma etching apparatus according to the second embodiment of the present invention,
Fig. 8 is a plan view of the bottom wall of the plasma etching apparatus of Fig. 7;
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[Example 1]
1 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus as
The
The
In the bottom portion of the
Above the
A
In the
Here, an arrangement example of the exhaust path and the
As shown in Fig. 2, two
The
A
Each component of the
The
The
The
The I /
The
Next, an example of the hardware configuration of the
In the
Next, the functional configuration of the
The opening
The opening /
Next, the processing operation in the
Next, the
In this state, high frequency power is applied from the high
In the
In addition, the opening /
After the etching treatment, the application of the high-frequency power from the high-
<Action>
Next, the operation of the
In the
As described above, in the
The ratio of the number of
The opening
(Where n denotes the number of the
It is desirable to adjust the opening of the
On the other hand, in the
[Example 2]
Next, the plasma etching apparatus according to the second embodiment of the present invention will be described with reference to FIGS. 7 and 8. FIG. In the following description, differences from the first embodiment will be mainly described, and duplicate descriptions for the same constitution as the first embodiment will be omitted.
7 is a schematic diagram showing the configuration of the
8 is a plan view of the
The
Other configurations and effects of this embodiment are similar to those of the first embodiment.
Although the embodiment of the present invention has been specifically described for the purpose of illustration, the present invention is not limited to the above embodiment, and various modifications are possible. For example, although the parallel plate type plasma etching apparatus is taken as an example in the above embodiment, the present invention can be applied to other types of plasmas such as an inductively coupled plasma apparatus, a surface wave plasma apparatus, an ECR (Electron Cyclotron Resonance) plasma apparatus, It is also applicable to an etching apparatus. The present invention is applicable not only to a dry etching apparatus, but also to a film forming apparatus, an ashing apparatus, and the like, as long as it is a vacuum apparatus requiring pressure control in the chamber.
Further, the present invention is not limited to the use of the FPD substrate as an object to be processed, but can also be applied to a case where a semiconductor wafer or a substrate for a solar cell is used as an object to be processed.
1: processing
1b:
11: susceptor 12: substrate
13, 14: sealing member 15: insulating member
31: shower head 33: gas diffusion space
35: gas discharge hole 37: gas inlet
39: process gas supply pipe 41: valve
43: Mass flow controller 45: Gas supply source
51: exhaust opening 53: exhaust pipe
53a:
53B:
57: exhaust device 61: pressure gauge
71: feeder line 73: matching box (MB)
75: High-
Claims (8)
A gas supply source for supplying a processing gas into the processing vessel through a gas supply path,
A flow rate adjusting device which is provided in the gas supply line and adjusts a supply flow rate of the process gas,
A pressure detecting device for detecting a pressure in the processing container,
A plurality of first exhaust passages connected to the processing vessel and provided with a first valve,
A plurality of second exhaust passages connected to the processing vessel and provided with a second valve,
An exhaust device connected to the first exhaust passage or the second exhaust passage,
And a controller for controlling the first valve and the second valve based on the detected pressure value and the set pressure value detected by the pressure detecting device so that the pressure in the processing container becomes a predetermined value,
And,
Wherein the first valve is a valve for varying the conductance of the first exhaust passage,
The second valve is a valve for switching the opening and closing of the second exhaust passage,
Wherein the control unit includes an opening degree adjusting unit that collectively adjusts an opening degree of the first valve provided in each of the plurality of first exhaust paths, Closing switching unit for switching the switching unit
Vacuum device.
Wherein one exhausting device is connected to both of the first exhaust passage and the second exhaust passage.
Wherein the control unit sets the flow rate of the exhaust gas when the conductance is adjusted by the first valve in the first exhaust passage to be V11 and controls the flow rate of the exhaust gas when the opening degree of the first valve is set to be the total opening in the first exhaust passage The flow rate of the gas is V12, and the flow rate of the exhaust gas in the second exhaust passage is V2.
(Where n represents the number of the first exhaust passage and m represents the number of the second exhaust passage)
The opening of the first valve and the opening of the second valve are controlled.
Wherein the second valve uses a valve for varying the conductance of the second exhaust passage so as to perform only opening and closing operations.
Wherein the vacuum apparatus is an etching apparatus that performs etching with respect to an object to be processed.
Wherein the object to be processed is a substrate for FPD.
The vacuum apparatus includes a processing container capable of holding an object to be processed and capable of vacuum-holding the inside thereof, a gas supply source for supplying a process gas through the gas supply path into the process container, A plurality of first exhaust passages connected to the processing vessel and provided with a first valve, and a plurality of second exhaust passages connected to the processing vessel, An exhaust device connected to the first exhaust passage or the second exhaust passage, and a second exhaust passage connected to the first exhaust passage or the second exhaust passage for detecting And a control unit for controlling the first valve and the second valve based on the detected pressure value and the set pressure value, Wherein the second valve is a valve for switching the opening and closing of the second exhaust passage, and the control section controls the opening degree of the first valve provided for each of the plurality of first exhaust passages And an opening / closing switching unit for switching the opening and closing of the second valve provided in each of the plurality of second exhaust paths in a manner to be controlled in total,
Synchronizing the opening of all the second valves in synchronism with each other;
And adjusting the opening degrees of all the first valves based on the detected pressure value and the set pressure value detected by the pressure detecting device
Wherein the valve control method comprises the steps of:
The exhaust gas flow rate when the conductance is adjusted by the first valve in the first exhaust passage is V11 and the exhaust gas flow rate when the opening degree of the first valve in the first exhaust passage is the total opening is V12 And the exhaust gas flow rate in the second exhaust passage is V2, the following expression (1) is satisfied:
(Where n represents the number of the first exhaust passage and m represents the number of the second exhaust passage)
The opening of the first valve and the opening and closing of the second valve are controlled so that the relationship
Valve control method.
Applications Claiming Priority (2)
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JP2013084632A JP6063803B2 (en) | 2013-04-15 | 2013-04-15 | Vacuum apparatus and valve control method |
JPJP-P-2013-084632 | 2013-04-15 |
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KR101747490B1 KR101747490B1 (en) | 2017-06-14 |
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KR (1) | KR101747490B1 (en) |
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JP6638576B2 (en) * | 2016-06-27 | 2020-01-29 | 東京エレクトロン株式会社 | Vacuum processing device, vacuum processing method, and storage medium |
JP2018053272A (en) * | 2016-09-26 | 2018-04-05 | 株式会社Screenホールディングス | Film deposition apparatus |
CN111279107A (en) * | 2017-11-23 | 2020-06-12 | 应用材料公司 | Locking valve for vacuum sealing, vacuum chamber and vacuum processing system |
JP6969465B2 (en) * | 2018-03-20 | 2021-11-24 | 株式会社島津製作所 | Target opening estimator and pressure adjustment vacuum valve |
WO2022157986A1 (en) * | 2021-01-25 | 2022-07-28 | 株式会社Kokusai Electric | Substrate treatment apparatus, production method for semiconductor device, pressure control device, and substrate treatment program |
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JP5322254B2 (en) * | 2007-06-29 | 2013-10-23 | 東京エレクトロン株式会社 | Vacuum processing apparatus, vacuum processing method, and storage medium |
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