TW201001098A

TW201001098A - Stripper composition for photoresist and method for stripping photoresist

Info

Publication number: TW201001098A
Application number: TW098111480A
Authority: TW
Inventors: Min-Choon Park; Sung-Joon Min; Kyung-Jun Kim; Hee Han; Hyok-Joon Kwon
Original assignee: Lg Chemical Ltd
Priority date: 2008-04-07
Filing date: 2009-04-07
Publication date: 2010-01-01
Also published as: WO2009125945A2; CN101981511A; WO2009125945A3; KR101082515B1; KR20090106992A; TWI406112B

Abstract

The present invention relates to a stripper composition for photoresist. More particularly, the present invention relates to a stripper composition for photoresist, which has an excellent photoresist stripping ability and is capable of stripping a great amount of photoresist even though it is used in a relatively small amount, is capable of being applied to a high temperature process condition, does not react with other components in the composition, and does not generate unnecessary byproducts, and a method for stripping a photoresist by using the same.

Description

201001098 六、發明說明：【發明所屬之技術領域】本發明係關於一種光阻清除組成物及使用該組成物清除光阻之方法。 5 本申請案係主張20〇8年4月7日向韓國智慧財產局提申之韓國專利申請案號10·2〇〇8-0032149的優先權，其揭露皆併於此，以作整體參酌。【先前技術】 10 半導體積體電路或液晶顯示器之精細線路之製作方法包括.均勻地將光阻塗佈於形成於基板上之導電金屬膜或絕緣膜上，其中，導電金屬膜例如有鋁、鋁合金、銅銅合金及其類似物，而絕緣膜例如有氧化矽膜、氮化矽膜及其類似物；選擇性地對光阻進行曝光及顯影，以形成光阻 15圖案；以圖案化光阻膜作為遮罩，對導電金屬膜或絕緣膜進行濕式蝕刻或乾式蝕刻，進而於光阻下層描繪出精細線路圖案，及使用清除劑，將不必要的光阻層移除。近來，為因應液晶顯示器大尺寸化之趨勢，使用清除劑處理之光阻濃度亦隨之增加。據此，已使用對於光阻具 2〇有相當大溶解度之二曱基乙酿胺（dimethy lacetamide，DMa、c) 來取代二醇物，例如，一般使用於清除劑中之二乙醇單丁喊、二乙醇單乙_及其類似物，以改善清除劑相對降低的清除力。 201001098 ^而，相較於習知二醇物，二甲基乙醯胺具有相對較低之沸點及較高之揮發性，故不可採用習知使用清除劑時之7〇程條件，而應改用溫度範圍於50至60。〇之新賴製知條件。就液晶顯示器之製程穩定性而言，低溫之製程條 5件較為有利，但清除劑之清除力可能會下降，且由於清除力之下降’產量可能隨著總製程時間之增加而降低。【發明内容】為了克服相關領域中之上述問題，必須發展一種光阻 10清除組成物，其具有優異之光阻清除力，且即使其使用量相對少量，仍可清除大量光阻，並可應用於高溫製程條件，不會降低生產率，不會與組成物中之其他組成份反應，且不會產生不需要的副產物。本發明提供一種光阻清除組成物，其包括：υ具有光 15阻清除力之化合物；以及2)溶劑，其包括如下式丨所示之乳醯胺類化合物： [式1] ΟΗ Ο II /R2201001098 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a photoresist removal composition and a method of using the composition to remove photoresist. 5 This application claims the priority of the Korean Patent Application No. PCT Application No. Hei. No. Hei. No. Hei. [Prior Art] 10 A method of fabricating a fine circuit of a semiconductor integrated circuit or a liquid crystal display includes uniformly applying a photoresist to a conductive metal film or an insulating film formed on a substrate, wherein the conductive metal film is, for example, aluminum Aluminum alloy, copper-copper alloy and the like, and the insulating film is, for example, a hafnium oxide film, a tantalum nitride film or the like; selectively exposing and developing the photoresist to form a photoresist pattern 15; The photoresist film is used as a mask to wet-etch or dry-etch the conductive metal film or the insulating film, thereby drawing a fine line pattern under the photoresist, and removing the unnecessary photoresist layer using a scavenger. Recently, in response to the trend of large-scale liquid crystal displays, the concentration of photoresist treated with a scavenger has also increased. Accordingly, dimethy lacetamide (DMa, c) has been used to replace the diol with a relatively large solubility for the photoresist 2, for example, it is generally used in the scavenger. Diethanol monoethyl _ and its analogues to improve the relatively reduced scavenging power of the scavenger. 201001098 ^, compared to the conventional diols, dimethyl acetamide has a relatively low boiling point and a high volatility, so it is not possible to use the conventional conditions of the use of scavengers, but should be changed The temperature range is from 50 to 60. The new system of knowing the conditions. In terms of process stability of the liquid crystal display, the low temperature process strip 5 is advantageous, but the scavenger removal power may be degraded, and the yield may decrease as the total process time increases due to the decrease in the purge force. SUMMARY OF THE INVENTION In order to overcome the above problems in the related art, it is necessary to develop a photoresist 10 cleaning composition which has excellent photoresist removal power, and can remove a large amount of photoresist even if it is used in a relatively small amount, and can be applied. Under high temperature process conditions, it does not reduce productivity, does not react with other components in the composition, and does not produce unwanted by-products. The present invention provides a photoresist removal composition comprising: a compound having a light-blocking detergency; and 2) a solvent comprising a lactam compound represented by the following formula: [Formula 1] ΟΗ Ο II / R2

Ri 2 C-N \Ri 2 C-N \

H 其中’ R!為氫或具有1至3個碳原子之烧基，且 20 尺2及R3互為相同或不同，且各自獨立為氫或具有丨至3 個碳原子之烷基。 ~ 201001098 此外，本發明提供一種使用該光阻清除組成物來清除光阻之方法。由於本發明之光阻清除組成物具有優異之光阻清除力’故即使其使用量較已知清除劑少，仍可展現與已知清 5 _相同或較優異之清除效果，且其可使用於贼以上之南溫製程條件。據此，可減少製程時間，因而可改善生產率。此外，由於使用於本發明光阻清除組成物中之溶劑，其不會與具有光阻清除力之化合物或其他添加劑反應，故不會產生不需要之副產物。因此，就環境及穩定性而言， 1〇其具有優異之特性。下文將詳細敘述本發明。本發明之光阻清除組成物包括：1)具有光阻清除力之化合物；以及2)溶劑，其包括如式！所示之乳酿胺類化合物。於本發明光阻清除組成物中，丨）具有光阻清除力之化 15合物並無特定限制，只要其具清除光阻之效果即可，較佳為’該化合物為有機胺化合物。更佳為，該有機胺化合物係選自由一级胺醇化合物、二级胺醇化合物、及三级胺醇化合物所組群組中之一者以上。 10 較佳為，該胺醇化合物之詳細舉例係選自由單乙醇胺 (monoethanol amine，MEA)、卜胺基異丙醇 (1-aminoisopropanol, AIP)、2-胺基丙醇甲基胺乙醇（N methyiamin〇ethan〇i， N-MAE)、3-胺基-1-丙醇（Lamino-ipropand)、4 胺基小 201001098 丁醇（4-amino-l-butanol)、2-(2-胺基乙氧基）-1-乙醇 (2-(2-aminoethoxy)-l-ethanol, AEE)、2-(2-胺基乙基胺基）-1-乙醇（2-(2-aminoethylamino)-l-ethanol)、二乙醇胺 (diethanol amine, DEA)、三乙醇胺(triethanol amine, 5 TEA)、及經乙基0辰口秦（hydroxyethylpiperazine, HEP)戶斤組群組之一者以上。以組成物之總重量為基準，1)具有光阻清除力之化合物含量較佳於1至75%之重量百分比範圍中，更佳於3至20% 之重量百分比範圍中。若具有光阻清除力之化合物含量少 10 於1°/。（重量百分比），則其對於變性光阻之清除力不足，若具有光阻清除力之化合物含量高於75% (重量百分比），於剝離製程中，由於其黏度增加且光阻滲透力低，因而增加清除時間。此外，亦有對於光阻下層導電金屬膜之腐蝕性增加的問題。 15 於本發明光阻清除組成物中，2)該溶劑之特徵在於，該溶劑包括如式1所示之乳醯胺類化合物。2)該溶劑可只使 Ο 用如式1所示之乳醢胺類化合物或乳醯胺類化合物搭配使用一或多種其他添加溶劑。更佳為，該乳醯胺類化合物為二甲基乳醯胺（dimethyl 20 lactamide, DML)、二曱基經丁醯胺（dimethyl hydroxybutylamide，DMHB)、或二甲基羥基乙醯胺 (dimethyl glycolamide)，但不侷限於此。於該些光阻清除組成物中，由於光阻清除組成物（包括 N-曱基曱醯胺（N-methylformamide, NMF)作為溶劑）中之有 201001098 機胺化合物與NMF (為清除劑之主要組成份）間具有反應性，故可能產生藉由NMF與有機胺化合物間之反應所形成之甲胺副產物。據此，於清除劑之組成份中，由於有機胺化合物之濃度減少，且曱胺具有刺激性的氣味，故使用清 5 除劑時，可能會有環境穩定性問題的發生，且有清除劑壽命縮短之問題。然而，由於本發明光阻清除組成物包括如式1所示之乳醯胺類化合物作為溶劑（為主要組成份），因此不會與有機胺化合物發生反應。藉此，由於不會產生具有刺激性氣味之 10 曱胺，因此，於使用清除劑時，其具有工作者可穩定操作之優點。此外，因為不會與有機胺化合物發生反應，所以具有易於重複使用清除組成物中有機胺化合物之優點。另外，相較於習知溶劑（如DMAc)，由於使用於本發明中之溶劑具有低黏度，故其可穩定使用於60°C以上之高溫 15 製程中。據此，不會有低溫製程導致製程時間增加之問題。因此，相較於習知技術，可改善生產率。於本發明之光阻清除組成物中，可加至2)該溶劑中之溶劑舉例可包括：N-甲基°比咯炫> 酮（N-methylpyrrolidone, NMP)、1,3- 二曱基 -2- 咪唑烷酮 20 (l,3-dimethyl-2-imidazolidinone， DMI)、二曱基亞石風 (dimethyl sulfoxide, DMSO)、二曱基乙醯胺（dimethyl acetamide, DMAc)、二曱基曱臨胺（dimethyl formamide， DMF)、N-曱基曱醢胺（N-methyl formamide，NMF)、四亞曱基石風（tetramethylenesulfone)、丁基二乙二醇（butyl diglycol, 201001098 BDG)、乙基二乙二醇（ethyl diglycol，EDG)、曱基二乙二醇（methyl diglycol，MDG)、三甘醇（triethylene glycol·^ TEG)、二乙二醇單***（diethyleneglycol monoethylether， DEM)、二乙二醇單丁醚（diethyleneglycol 5 monobutylether)、或其混合物，但不揭限於此。於本發明之光阻清除組成物中，2)該溶劑對於水及有機胺化合物具有優異之相容性，以作為溶解光阻之溶劑。此外，藉由降低清除劑之表面張力，可改善對於光阻膜之 f、潤濕性。 10 以組成物之總重量為基準，2)該溶劑之含量較佳於25 至99重量百分比之範圍，更佳於30至90重量百分比之範圍。若溶劑含量低於25重量百分比，則清除劑會有黏度增加造成清除劑之清除力降低的問題。因此，較佳係盡可能增加其重量範圍。 15 此外，本發明光阻清除組成物更可包括一抗腐钮劑。較佳為，使用可避免光阻下層之導電金屬膜或絕緣膜受損 ί / 之化合物作為抗腐蝕劑。於本發明中，可使用選自由下式 2、式3及式4所示化合物所組群組中之一者以上作為抗腐蝕劑0 20 [式2] ΟΗ R1 9 201001098 其中，R1及R2互為相同或不同’且各自獨立為氫或羥基，且 R3為氫、第三丁基、羧酸基（-COOH)、曱酯基 (-COOCH3)、乙酯基（-COOC2H5)、或丙酯基（-COOC3H7)， 5 [式 3]H wherein ' R ! is hydrogen or a burnt group having 1 to 3 carbon atoms, and 20 ft 2 and R 3 are the same or different from each other, and each independently is hydrogen or an alkyl group having from 丨 to 3 carbon atoms. ~ 201001098 Furthermore, the present invention provides a method of removing photoresist using the photoresist removal composition. Since the photoresist removal composition of the present invention has excellent photoresist removal power, even if it is used in a smaller amount than the known scavenger, it can exhibit the same or superior cleaning effect as the known cleaning, and it can be used. South temperature process conditions above the thief. According to this, the process time can be reduced, thereby improving the productivity. Further, since it is used in the photoresist of the photoresist removing composition of the present invention, it does not react with a compound having a photoresist removing power or other additives, so that unnecessary by-products are not produced. Therefore, in terms of environment and stability, it has excellent characteristics. The invention will be described in detail below. The photoresist removal composition of the present invention comprises: 1) a compound having a photoresist removal power; and 2) a solvent including, for example, a formula! The milk-branched amine compound is shown. In the photoresist-removing composition of the present invention, the compound having a photoresist-removing power is not particularly limited as long as it has an effect of removing light resistance, and it is preferred that the compound is an organic amine compound. More preferably, the organic amine compound is selected from the group consisting of a primary amine compound, a secondary amine compound, and a tertiary amine compound. Preferably, the detailed example of the amine alcohol compound is selected from the group consisting of monoethanol amine (MEA), 1-aminoisopropanol (AIP), and 2-aminopropanol methylamine ethanol (N). Methyiamin〇ethan〇i, N-MAE), 3-amino-1-propanol, 4 amino group small 201001098 butanol (4-amino-l-butanol), 2-(2-amino group Ethyloxy)-1-ethanol (2-(2-aminoethoxy)-l-ethanol, AEE), 2-(2-aminoethylamino)-1-ethanol (2-(2-aminoethylamino)-l -ethanol), diethanol amine (DEA), triethanol amine (5 TEA), and one of the groups of ethyl hydroxyethylpiperazine (HEP). The compound having a photoresist removal power is preferably in the range of from 1 to 75% by weight, more preferably from 3 to 20% by weight, based on the total weight of the composition. If the compound with photoresist removal power is less than 10 °. (% by weight), its scavenging power for denatured photoresist is insufficient. If the compound with photoresist removal power is higher than 75% by weight, in the stripping process, due to its viscosity increase and low photoresist penetration, Thus increasing the clearing time. In addition, there is also a problem that the corrosion of the conductive metal film under the photoresist is increased. In the photoresist removing composition of the present invention, 2) the solvent is characterized in that the solvent comprises a chymamine compound as shown in Formula 1. 2) The solvent may be used alone in combination with one or more other added solvents in combination with a chymamine compound or a chymamine compound as shown in Formula 1. More preferably, the chymamine compound is dimethyl 20 lactamide (DML), dimethyl hydroxybutylamide (DMHB), or dimethyl glycolamide. ), but not limited to this. In the photoresist removal compositions, there are 201001098 amine compounds and NMF (as the main scavenger) due to the photoresist removal composition (including N-methylformamide (NMF) as a solvent). The group components are reactive, so that a methylamine by-product formed by the reaction between NMF and an organic amine compound may be produced. Accordingly, in the component of the scavenger, since the concentration of the organic amine compound is decreased, and the guanamine has a pungent odor, the use of the clearing agent may cause environmental stability problems and a scavenger. The problem of shortened life. However, since the photoresist-removing composition of the present invention comprises a chymamine compound represented by Formula 1 as a solvent (main component), it does not react with an organic amine compound. Thereby, since the guanamine having a pungent odor is not produced, it has the advantage that the worker can stably operate when the scavenger is used. Further, since it does not react with the organic amine compound, it has an advantage of being easy to reuse to remove the organic amine compound in the composition. Further, since the solvent used in the present invention has a low viscosity as compared with a conventional solvent (e.g., DMAc), it can be stably used in a high temperature process of 60 ° C or more. Accordingly, there is no problem that the process time increases due to the low temperature process. Therefore, productivity can be improved as compared with the prior art. In the photoresist removal composition of the present invention, the solvent which can be added to 2) the solvent may include, for example, N-methylpyrrolidone (NMP), 1,3-dioxene. 1,2-dimethyl-2-imidazolidinone (DMI), dimethyl sulfoxide (DMSO), dimethyl acetamide (DMAc), diterpenes Dimethyl formamide (DMF), N-methyl formamide (NMF), tetramethylenesulfone, butyl diglycol (201001098 BDG), Ethyl diethylene glycol (EDG), methyl diglycol (MDG), triethylene glycol (TEG), diethyleneglycol monoethylether (DEM), Diethyleneglycol 5 monobutylether, or a mixture thereof, but is not limited thereto. In the photoresist removal composition of the present invention, 2) the solvent has excellent compatibility with water and an organic amine compound as a solvent for dissolving the photoresist. Further, by reducing the surface tension of the scavenger, the wettability to the photoresist film can be improved. 10 Based on the total weight of the composition, 2) the content of the solvent is preferably in the range of 25 to 99% by weight, more preferably in the range of 30 to 90% by weight. If the solvent content is less than 25% by weight, the scavenger may have a problem that the viscosity is increased to cause a decrease in the scavenging power of the scavenger. Therefore, it is preferable to increase the weight range as much as possible. Further, the photoresist removing composition of the present invention may further comprise an anti-corrosion button. Preferably, a compound which can prevent the conductive metal film or the insulating film of the lower layer of the photoresist from being damaged is used as an anticorrosive agent. In the present invention, one or more selected from the group consisting of the compounds represented by the following formulas 2, 3, and 4 can be used as the anticorrosive agent 0 20 [Formula 2] ΟΗ R1 9 201001098 wherein R1 and R2 are each Same or different 'and each independently hydrogen or hydroxy, and R3 is hydrogen, tert-butyl, carboxylic acid (-COOH), oxime (-COOCH3), ethyl ester (-COOC2H5), or propyl ester (-COOC3H7), 5 [Formula 3]

〜一°- N / N、 V/R5 N\ R6 其中，R4為氫或具有1至4個碳原子之烷基，且 R5及R6互為相同或不同，且各自獨立為具有1至4個碳原子之羥烷基， 1〇 [式 4]~1°-N / N, V/R5 N\ R6 wherein R4 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and R5 and R6 are the same or different from each other, and each independently has 1 to 4 Hydroxyalkyl group of carbon atom, 1〇[Formula 4]

R7-— | 、、N Η 其中’R7為氫或具有1至4個碳原子之烷基。即使進行清洗時，直接使用水而未使用異丙醇（為洗蘇溶液介質），該抗腐蝕劑仍可避免導電金屬膜或絕緣膜（如紐 15 或鋁合金膜）之腐蝕。一般而言，若直接使用水而未使用異丙醇（為洗膝溶液介質）進行清洗，具有清除力之組成份（如清除組成物中之胺成分）會與水混合，因而產生具有強腐蝕性之鹼性氫氧根離子，進而促使金屬腐蝕。然而，於本發明中，由於使用鹼 20性狀態之抗腐蝕劑，故其會與鋁結合形成錯合物，並吸附 201001098 於鋁的表面形成保護膜，因而可避免受到氫氧根離子的腐钮。尤其是，相較於相關領域中廣泛使用作為銅膜抗腐蝕劑之苯並三唾、甲苯三氮唾及其類似物，式2、式3或式馈不之抗腐#劑可大幅改善抗腐餘效果。據此，即使其添加量少’光阻下層之導電金屬膜(如銅或銅合金)也不會發生腐蝕現象，且可有效移除殘留之固化光阻。R7-- | , N Η wherein 'R7 is hydrogen or an alkyl group having 1 to 4 carbon atoms. Even when cleaning is carried out, water is used directly without using isopropyl alcohol (which is a solution medium), and the corrosion inhibitor can prevent corrosion of a conductive metal film or an insulating film such as a neon or aluminum alloy film. In general, if water is used directly without isopropyl alcohol (for the knee-washing medium), the components with a detergency (such as the amine component in the removal composition) will mix with the water, resulting in strong corrosion. Alkaline hydroxide ions, which in turn promote metal corrosion. However, in the present invention, since the alkali 20-state anticorrosive agent is used, it combines with aluminum to form a complex, and adsorbs 201001098 to form a protective film on the surface of the aluminum, thereby avoiding the corrosion of the hydroxide ion. . In particular, the anti-corrosion agent of Formula 2, Formula 3 or the formula can greatly improve the anti-corrosion compared to the benzotrisene, toluene tris-salt and the like which are widely used as a copper film anticorrosive agent in the related art. The remaining effect. Accordingly, even if the amount of addition is small, the conductive metal film (e.g., copper or copper alloy) of the lower layer of the photoresist does not corrode, and the residual cured photoresist can be effectively removed.

10 15 20 以下將描述式2、式3或式4所示之抗腐触劑的抗腐餘機制。於式2所示之抗腐姓劑例子中’直接取代於苯環之經美會與銘結合而呈賴狀態，因而其可控制驗性溶液所造二之金屬腐敍現象。於式3或式4所示之抗腐钮劑例子中，舍坐％中之氮原子非共價電子對會透過電子而鍵結於銅’因而控制金屬腐蝕現象。、於本發明之光阻清除組成物中，抗腐姓劑可使化合物與式3或式4化合物所形成之混合物。 " 於本發日狀綠清㈣錢巾，Μ絲 ^準’抗腐㈣之含量較佳於_至5重量百分比之= :，更佳於G.1M重量百分比之範圍中。若抗腐㈣ ^〇·(Η重量百分比，當欲進行清除製程之 =01接觸時，金屬線路可能發生部份顧的現二t 可含^於5重量百分比，由於黏度的增加，清除力果：對二降二而:成物之成本則會增加，因此，就效對於成本而δ，其不能稱之為有效。 1 201001098 此外’本發明之光阻清除組成物更可包括一界面活性劑。於本發明之光阻清除組成物中，該界面活性劑可避免自基板剝離之變性光阻再次沉積的現象。較佳為’使用如下式5所示之界面活性劑做為該界面活性劑。 [式5]10 15 20 The anti-corrosion mechanism of the anti-corrosion agent shown in Formula 2, Formula 3 or Formula 4 will be described below. In the example of the anti-corrosion agent shown in Formula 2, the direct replacement of the benzene ring by the combination of the United States and the Ming is in a state of reliance on the benzene ring, so that it can control the metal rotification phenomenon of the test solution. In the example of the anti-corrosion button shown in Formula 3 or Formula 4, the non-covalent electron pair of the nitrogen atom in the % of the sitting is bonded to the copper by electrons, thereby controlling the metal corrosion phenomenon. In the photoresist removal composition of the present invention, the antiseptic agent can be a mixture of the compound and the compound of formula 3 or formula 4. " In the present day, the green (4) money towel, the silk wire * quasi-anti-corrosion (four) content is preferably _ to 5 weight percent = :, more preferably in the range of G.1M weight percentage. If the anti-corrosion (4) ^ 〇 · (Η weight percentage, when you want to carry out the cleaning process = 01 contact, the metal line may occur part of the current two t can be contained in 5 weight percent, due to the increase in viscosity, the removal force : The second is two: the cost of the product will increase, so the effect is δ, which cannot be called effective. 1 201001098 In addition, the photoresist removal composition of the present invention may further comprise a surfactant. In the photoresist removal composition of the present invention, the surfactant can avoid the phenomenon of re-deposition of the denatured photoresist peeled off from the substrate. Preferably, 'the surfactant shown in the following formula 5 is used as the surfactant. [Formula 5]

其中R8為氫或具有丨至1〇個碳原子之烷基， 10 T為氩、甲基或乙基， m為1至4之整數，且 η為1至50之整數。式5所示之界面活性劑不會導致具有強鹼性之清除组成物發生化性變化，其對於水及有機溶劑具有優異之相容 15 性，且可改善清除劑之清除力。以組成物之總重量為基準，界面活性劑之含量較佳於重量百分比之範圍中。若界面活性劑含量高於i重量百分比，則不會=特別的改善作用，且點度會增加而組成物的成本會提高，因而降低經濟效益。—般而言，♦黏 20 度下降時’可展現優異之低溫清除力。 12 201001098 本發明之光阻清除組成物具有優異的光阻清除力，其不會對光阻下層之導電金屬膜及絕緣膜造成損害，且對於光阻下層之導電金屬膜及絕緣膜，其可提供優異之抗力。 5夕導電金屬膜或絕緣膜可為單層膜或具有兩膜層以上之夕層膜’其係由金屬組成，例如，鋁、銅、斂、鉬或其金屬。金。更佳為，該導電金屬膜或絕緣膜可為包含紹、銅或其合金之單層膜，或具有兩膜層以上之多層膜，包含鋁、 ^其合金及m其合金之單層膜，或具有兩層膜以 10 上之多層腔。 15 20 -般而言’於製作半導體裝置及液晶顯示器之製程，會進行-個以上的光阻製程。此外，如上所述，形成於基板上之導電金屬膜或'絕緣膜可為單層膜或具有兩層膜乂上之夕層膜，其包含㉔及/或銅。於相關技術中，對於盆 ^成有導電金屬膜或絕緣膜（包含㈤之基板進行光阻製 ’及其上形成有㈣金屬膜或絕緣膜（包含銅）之基板進行光阻製程中’會使用不同之光阻清除劑。然而，料其上形成有導電金屬膜或絕緣膜（包含銘、 :或織銅）之基板，本發明之光阻清除組成物具有優異之清除力及腐钮性。、清除本法特徵在於，使用上述本發明光本具體實施例之清除光阻方法包括以下步驟：覆光阻於形成於基板上之導電金屬膜或絕緣膜上；2) 13 201001098 於基板上形成光阻圖案；3)將光阻圖案作為遮罩，對導電金屬膜或絕緣膜進行蝕刻；及句使用該光阻清除組成物，清除該光阻。本發明另一具體實施例之清除光阻方法包括以下步 5驟：1)塗覆光阻於基板整體表面；2)於基板上形成光阻圖案；3)於其上形成有光阻圖案之基板上，形成導電金屬膜或絕緣膜；及4)使用本發明之光阻清除組成物，清除該光阻。於本發明清除光阻之方法中，導電金屬膜或絕緣膜可 10為單層膜或具有兩層膜以上之多層膜，其包含如鋁、銅、鈥及鉬之金屬或其金屬合金。詳細地說，較佳雙層膜、Cu/MoX及其類似者。藉由使用本發明光阻清除組成物，自基板（其上形成有精細電路圖案）清除光阻之方法可為浸泡法或單式法（single 15 type method)，浸泡法係將複數個即將進行清除步驟之基板同時浸泡於大量的清除溶液中’而單式法係一個一個地將清除溶液噴麗於基板上，以移除光阻。可使用本發明光阻清除組成物剝離之光阻種類為正型光阻、負型光阻、正/負雙型光阻（p0sitjve/negative duai tone 20 Photoresist)。其組成份無限制，尤其可有效應用之光阻為包含光感化合物之光阻’光感化合物係由酚醛清漆類酚樹脂（novolac-based phenol resin)及重氮萘酉昆 (diazonaphtoquinone)戶斤組成。 14 201001098 使用本發明光阻清除組成物來清除光阻而製成之液晶器或半導體裝置的特徵在於，清除光阻時，具有精細圓案的基板不會受到腐钱或損害，且光阻殘留量少。 >上所述，於本發明中，可於高低溫之條件下，短時間地輕易移除進行微影製程時而變性之光阻膜，且當使用水而不使用異丙醇（洗祕液介f)進行清洗時，可提供使用該光阻清除組成物，其難以對光阻下層之導電膜及絕緣膜〇 (如鋁或鋁合金，及銅或銅合金）造成腐蝕現象。尤其是，本發明可於低溫下，藉由剝離光阻清除法，短時間地完全清 10 除因劇烈微影製程造成變性之光阻膜。【實施方式】下文將參考實施例以詳細敘述本發明。本發明可具體實施為許多不同態樣，且不應解釋為限制於在此所舉例之 15 實施例。更確切地說，該些實施例係為了將本發明概念完全傳達予該領域之熟悉技術人士。 1/ <實施例> <實施例1至8> 使用下表1所述之組成份及成份比例，於常溫下搜拌2 20 小時，接著使用〇· 1 μπι濾器進行過濾，以製得清除溶液。 <比較例1至7> 依據實施例1至8所述之方法，使用下表1所述之組成份及成份比例，以製得清除溶液。 [表1] 15 201001098 類別組成分（重量份）胺類化合物溶劑抗腐#劑種類含量種類含量 MG THTTA 實施例1 AEE 5 DML 94.2 0.5 0.3 實施例2 AEE 5 DML NMP 84.2 10 0.5 0.3 實施例3 AEE 5 DML NMP BDG 74.2 10 10 0.5 0.3 實施例4 HEP 5 DML 94.2 0.5 0.3 實施例5 HEP 5 DML BDG 74.2 20 0.5 0.3 實施例6 AEE 5 DML DMAc 74.2 20 0.5 0.3 實施例7 AEE 5 DMHB 94.2 0.5 0.3 實施例8 HEP 5 DMHB 94.2 0.5 0.3 比較例1 AEE 5 DMAc NMP 84.2 10 0.5 0.3 比較例2 AEE 5 BDG NMP 64.2 30 0.5 0.3 比較例3 MEA 5 BDG NMP 64.2 30 0.5 0.3 比較例4 HEP 5 NMF BDG 49.2 45 0.5 0.3 比較例5 HEP 5 NMF DMAc 49.2 45 0.5 0.3 16 201001098 比較例6 MEA 30 BDG 69.2 0.5 0.3 DMAc 49.2 比較例7 AEE 7 NMF 30 0.5 0.3 NMP 13 *AEE : 2-(2-胺基乙氧基）-1-乙醇 DML :二甲基乳醯胺 NMP : N-甲基吡咯烷酮 BDG : 丁基二乙二醇 5 MEA :單乙醇胺 HEP :羥乙基哌嗪 DMAc :二甲基乙醯胺 NMF : N-甲基曱醢胺 DMHB :二曱基羥丁醯胺 10 MG :掊酸甲 S旨（methyl gallate) THTTA ••四氣曱基苯並三。坐（tetrahydrotolutriazole) <試驗例> 評估清除速率、揮發性及腐蝕程度於製作LCD(液晶顯示器）之TFT(薄膜電晶體）電路過程中，玻璃基板上部形成300 A閘極及2,000 A銅層，再於 15 玻璃基板上形成Mo/Ti所構成之雙金屬合金，接著塗覆正型光阻，並進行乾燥，再藉由微影製程形成圖案，以製得進行濕式蝕刻之樣品。使用實施例1至8及比較例1至7所製得之光阻清除組成物，藉由下述方法測量清除速率、揮發性及銅線路之 20 腐蝕程度，其結果如下表2所述。 1.清除速率 17 201001098 上後(Γ:液;'顯示器之一般正型光阻旋轉塗覆至裸玻離上後(為2 使用接觸式熱板’進行、1〇 5 10 ◎ 〇 Δ 清除時間為3分鐘内清除時間為3至5分鐘清除時間為5至7分鐘清除時間為7分鐘以上 2·揮發性，步驟，再進行丨鐵、21G秒之後烤步驟，並使用實施例至8及比較例！至7所製得之光阻清除組成物，進行清除 :估°藉由浸泡法’使用該組成物’於⑽進行清除步驟: 並1測完全移除正型光阻所需之時間，以獲得清除狀況。將實施例1至8及比較例i至7所製得之1〇〇g光阻清除，成物放人容料15G ml的玻璃瓶中後，使用調整為 7〇〇C之油浴，靜置4天，再測量重量變化，並比較其結果。 ◎:殘留有原重量之71 % 〇 :殘留有原重量之61至70% △•殘留有原重量之51至60% X :殘留有原重量之50%以下 3·腐银程度將實施例1至8及比較例丨至7所製得之光阻清除組 f物維持於70。(：後’浸泡製得之樣品3〇分鐘，接著用水月洗30私，再用超純水清洗3〇秒而後用氮氣乾燥。於疋成乾燥後，使用電子顯微鏡（FE-SEM)，以50,〇〇〇至 2〇〇,〇〇〇的放大倍率觀察樣品表面、側面及剖面的腐蝕程 18 201001098 度’其結果如下表2所述。同時，使用下述標準’以評估腐触程度。由評估結果可發現，使用實施例1至8清除組成物之每一樣品的表面、側面及剖面未發生腐蝕現象，可獲得無瑕疵的圖案。 ◎ : Cu層表面及側面未發生腐蝕現象〇：Cu層表面及側面發生輕微腐蝕現象 △ : Cu層表面及側面部份未發生腐蝕現象Wherein R8 is hydrogen or an alkyl group having from 丨 to 1 碳 carbon atoms, 10 T is argon, methyl or ethyl, m is an integer from 1 to 4, and η is an integer from 1 to 50. The surfactant of the formula 5 does not cause a change in the clearing composition having a strong basicity, and it has excellent compatibility with water and an organic solvent, and can improve the scavenging power of the scavenger. The content of the surfactant is preferably in the range of percentage by weight based on the total weight of the composition. If the surfactant content is higher than the i weight percentage, it will not be a special improvement effect, and the dot will increase and the cost of the composition will increase, thereby reducing the economic efficiency. In general, ♦ when the viscosity is lowered by 20 degrees, it can exhibit excellent low temperature removal power. 12 201001098 The photoresist removal composition of the invention has excellent photoresist removal force, which does not damage the conductive metal film and the insulation film of the lower layer of the photoresist, and can be used for the conductive metal film and the insulation film of the lower layer of the photoresist. Provides excellent resistance. The conductive metal film or the insulating film may be a single layer film or a film having two or more layers, which is composed of a metal such as aluminum, copper, condensed, molybdenum or a metal thereof. gold. More preferably, the conductive metal film or the insulating film may be a single layer film containing bis, copper or an alloy thereof, or a multilayer film having two or more layers, including a single layer film of aluminum, alloys thereof and alloys thereof. Or have a multilayer film with two layers of film on top of 10. 15 20 In general, more than one photoresist process is performed in the process of fabricating a semiconductor device and a liquid crystal display. Further, as described above, the conductive metal film or 'insulating film formed on the substrate may be a single layer film or a film having two layers of film, which contains 24 and/or copper. In the related art, a substrate having a conductive metal film or an insulating film (the substrate comprising (5) is photo-resisted and a substrate formed with a (4) metal film or an insulating film (including copper) is subjected to a photoresist process. Different photoresist removing agents are used. However, the substrate having the conductive metal film or the insulating film (including inscription, or woven copper) is formed thereon, and the photoresist removing composition of the present invention has excellent cleaning power and corrosion resistance. The method of removing the photoresist according to the embodiment of the present invention comprises the steps of: coating a photoresist on a conductive metal film or an insulating film formed on a substrate; 2) 13 201001098 on the substrate Forming a photoresist pattern; 3) etching the conductive metal film or the insulating film using the photoresist pattern as a mask; and removing the composition by using the photoresist to remove the photoresist. A method for removing photoresist according to another embodiment of the present invention includes the following steps: 1) applying a photoresist to the entire surface of the substrate; 2) forming a photoresist pattern on the substrate; 3) forming a photoresist pattern thereon. Forming a conductive metal film or an insulating film on the substrate; and 4) removing the photoresist using the photoresist removing composition of the present invention. In the method for removing photoresist in the present invention, the conductive metal film or the insulating film 10 may be a single layer film or a multilayer film having two or more films containing a metal such as aluminum, copper, lanthanum and molybdenum or a metal alloy thereof. In detail, a two-layer film, Cu/MoX and the like are preferred. By using the photoresist removal composition of the present invention, the method of removing the photoresist from the substrate on which the fine circuit pattern is formed may be a soaking method or a single 15 type method, and the immersion method will be performed in plurality. The substrate of the cleaning step is simultaneously immersed in a large amount of the scavenging solution' and the single method is used to spray the scavenging solution one by one on the substrate to remove the photoresist. The type of photoresist to which the photoresist removal composition of the present invention can be peeled off is a positive type photoresist, a negative type photoresist, and a positive/negative double type photoresist (p0sitjve/negative duai tone 20 Photoresist). The composition is not limited, and the photoresist which is effectively used is a photoresist containing a photo-sensitive compound. The photo-sensitive compound is composed of a novolac-based phenol resin and a diazonaphtoquinone. composition. 14 201001098 A liquid crystal device or a semiconductor device fabricated by using the photoresist removing composition of the present invention to remove photoresist is characterized in that, when the photoresist is removed, the substrate having the fine round case is not subjected to corruption or damage, and the photoresist remains. Less. > As described above, in the present invention, the photoresist film which is denatured during the lithography process can be easily removed in a short time under high and low temperature conditions, and when water is used instead of isopropyl alcohol (washing secret) When the liquid is cleaned, it is possible to provide a use of the photoresist to remove the composition, which is difficult to cause corrosion to the conductive film of the lower layer of the photoresist and the insulating film (such as aluminum or aluminum alloy, and copper or copper alloy). In particular, the present invention can completely remove the photo-resist film which is denatured by the violent lithography process by a stripping photoresist removal method at a low temperature. [Embodiment] Hereinafter, the present invention will be described in detail with reference to the embodiments. The present invention may be embodied in many different forms and should not be construed as being limited to the embodiments illustrated herein. Rather, these embodiments are provided to fully convey the inventive concept to those skilled in the art. 1/ <Examples><Examples 1 to 8> Using the component parts and the component ratios described in Table 1 below, the mixture was mixed at room temperature for 20 hours, followed by filtration using a 〇·1 μπι filter. The solution is removed. <Comparative Examples 1 to 7> According to the methods described in Examples 1 to 8, the component parts and the component ratios described in Table 1 below were used to prepare a scavenging solution. [Table 1] 15 201001098 Class composition (parts by weight) Amine compound solvent anti-corrosion #Agent type content type content MG THTTA Example 1 AEE 5 DML 94.2 0.5 0.3 Example 2 AEE 5 DML NMP 84.2 10 0.5 0.3 Example 3 AEE 5 DML NMP BDG 74.2 10 10 0.5 0.3 Example 4 HEP 5 DML 94.2 0.5 0.3 Example 5 HEP 5 DML BDG 74.2 20 0.5 0.3 Example 6 AEE 5 DML DMAc 74.2 20 0.5 0.3 Example 7 AEE 5 DMHB 94.2 0.5 0.3 Example 8 HEP 5 DMHB 94.2 0.5 0.3 Comparative Example 1 AEE 5 DMAc NMP 84.2 10 0.5 0.3 Comparative Example 2 AEE 5 BDG NMP 64.2 30 0.5 0.3 Comparative Example 3 MEA 5 BDG NMP 64.2 30 0.5 0.3 Comparative Example 4 HEP 5 NMF BDG 49.2 45 0.5 0.3 Comparative Example 5 HEP 5 NMF DMAc 49.2 45 0.5 0.3 16 201001098 Comparative Example 6 MEA 30 BDG 69.2 0.5 0.3 DMAc 49.2 Comparative Example 7 AEE 7 NMF 30 0.5 0.3 NMP 13 *AEE : 2-(2-Aminoethoxyl Base-1-ethanol DML: dimethyl decylamine NMP : N-methylpyrrolidone BDG : butyl diethylene glycol 5 MEA : monoethanolamine HEP : hydroxyethylpiperazine DMAc : dimethyl acetamide NMF : N-Methylguanamine DMHB: Dimercapto Hydroxamidine 10 MG: methyl gallate THTTA • Four gas benzotriene. Tetrahydrotolutriazole <Test Example> Evaluation of removal rate, volatility, and corrosion degree In the process of fabricating an LCD (Liquid Crystal Transistor) circuit for an LCD (Liquid Crystal Display), a 300 A gate and a 2,000 A copper layer were formed on the upper portion of the glass substrate. Then, a bimetal alloy composed of Mo/Ti is formed on the 15 glass substrate, followed by coating a positive photoresist, and drying, and then patterning by a lithography process to obtain a sample subjected to wet etching. Using the photoresist removal compositions prepared in Examples 1 to 8 and Comparative Examples 1 to 7, the removal rate, the volatility, and the degree of corrosion of the copper wiring were measured by the following methods, and the results are shown in Table 2 below. 1. Clearance rate 17 201001098 After (Γ: liquid; 'The general positive resist of the display is spin-coated to the bare glass (after 2 using contact hot plate), 1〇5 10 ◎ 〇Δ clearing time The cleaning time is 3 to 5 minutes in 3 minutes. The cleaning time is 5 to 7 minutes. The removal time is 7 minutes or more. 2. Volatile, the steps are followed by the ferroniobium, the 21G second post-baking step, and the use of Examples to 8 and comparison. Example: To remove the photoresist from the photoresist obtained by 7, perform the removal: estimate the 'removal step' by using the immersion method '(Use the composition') at (10): and measure the time required to completely remove the positive photoresist. The removal condition was obtained. The photoresist of 1 〇〇g prepared in Examples 1 to 8 and Comparative Examples i to 7 was removed, and the composition was placed in a glass bottle of 15 G ml, and the use was adjusted to 7 〇〇C. The oil bath was allowed to stand for 4 days, and the weight change was measured, and the results were compared. ◎: 71% of the original weight remained 〇: 61 to 70% of the original weight remained △ • Remaining 51 to 60% of the original weight X: Residual weight less than 50% of the original weight 3. Degree of rosin The photoresists obtained in Examples 1 to 8 and Comparative Examples 丨 to 7 were removed. The f material was maintained at 70. (: After the soaked sample was taken for 3 minutes, then washed with water for 30 weeks, then washed with ultrapure water for 3 seconds and then dried with nitrogen. After drying, use an electron microscope ( FE-SEM), observe the corrosion course of the surface, side and section of the sample at a magnification of 50, 〇〇〇 to 2 〇〇〇, 18 201001098 degrees. The results are as follows in Table 2. At the same time, the following criteria were used. 'To evaluate the degree of corrosion. From the evaluation results, it was found that the surface, the side surface and the cross section of each of the samples using the examples 1 to 8 were not corroded, and a flawless pattern was obtained. ◎ : Surface of the Cu layer and No corrosion occurred on the side 〇: slight corrosion occurred on the surface and side of the Cu layer △ : No corrosion occurred on the surface and side portions of the Cu layer

X : Cu層表面及側面發生嚴重的腐蝕現象 [表2]X : Severe corrosion on the surface and side of the Cu layer [Table 2]

類別清除速率揮發性腐蝕程度耳施例1 ◎ ◎ ◎ 實施例2 ◎ ◎ ◎ 實施例3 ◎ ◎ ◎ 實施例4 Δ ◎ ◎ 實施例5 △ ◎ ◎ 實施例6 ◎ △ ◎ 實施例7 ◎ ◎ ◎ 實施例8 Δ ◎ ◎ 比較例1 ◎ X ◎ 比較例2 X ◎ Δ- 比較例3 ◎ ◎ X 比較例4 ———— X ◎ ◎ 比較例5 △ X ◎ 比較例6 ◎ △ X 19 201001098Category Clearance Rate Volatile Corrosion Degree Ear Example 1 ◎ ◎ Example 2 ◎ ◎ ◎ Example 3 ◎ ◎ Example 4 Δ ◎ ◎ Example 5 △ ◎ ◎ Example 6 ◎ △ ◎ Example 7 ◎ ◎ ◎ Example 8 Δ ◎ ◎ Comparative Example 1 ◎ X ◎ Comparative Example 2 X ◎ Δ - Comparative Example 3 ◎ ◎ X Comparative Example 4 ———— X ◎ ◎ Comparative Example 5 △ X ◎ Comparative Example 6 ◎ △ X 19 201001098

5 由表1及表2可發現，本發明之光阻清除組成物具有優異之光阻清除力。此外，由於可縮短製程時間故可改善生產率。因為使用於本發明光阻清除組成物中之溶劑不會與具有光阻清除力之化合物或其他添加劑反應，所以不會產生不需要的副產物’因而有利於環境及穩定性。【圖式簡單說明】無。【主要元件符號說明】無。 205 It can be seen from Tables 1 and 2 that the photoresist removal composition of the present invention has excellent photoresist removal power. In addition, productivity can be improved by shortening the process time. Since the solvent used in the photoresist-removing composition of the present invention does not react with a compound having a photoresist removing power or other additives, it does not produce an undesirable by-product, which is advantageous for the environment and stability. [Simple description of the diagram] None. [Main component symbol description] None. 20

Claims

201001098 七、申請專利範圍： I 一種光阻清除組成物，包括： U一具有光阻清除力之化合物；以及 5 合劑’其包括如下式冰示之乳酿胺類化合物 ί式1] ΟΗ 〇 I II /2 Rl'~β—C-— \r3 其中，R丨為氫或具有1至3個碳原子之烷基，且 &及R3互為相同或不同’且各自獨立為氫或具有丄至3 個碳原子之烷基。 2.如申凊專利範圍第丨項所述之光阻清除組成物，其 1)該具有光阻清除力之化合物為一有機胺類化合物。 3，如申請專利範圍第2項所述之光阻清除組成物，其中該有機私類化合物包括選自由一级胺醇化合物、二级胺醇化合物、及三级胺醇化合物所組群組中之一或一者以 15 上。 4.如申請專利範圍第2項所述之光阻清除組成物，其中，該有機胺類化合物包括選自由單乙醇胺（MEA)、丨_胺基異兩醇（AIP)、2-胺基-1-丙醇、N-甲基胺乙醇（n_mAE)、3- 胺基-1-丙醇、4-胺基-1-丁醇、2-(2-胺基乙氧基）_；[_乙醇 (AEE)、2-(2-胺基乙基胺基）-1-乙醇、二乙醇胺（deA)、三乙醇胺（TEA)、及羥乙基哌嗪（HEP)所組群組之一或一者以上。 21 201001098 5. 如申請專利範圍第1項所述之光阻清除組成物，其中’以該組成物之總重量為基準，1)該具有光阻清除力之化合物含量係於1至75重量百分比之範圍中。 5 10 15 6. 如申請專利範圍第丨項所述之光阻清除組成物，其中，2)之該乳醯胺類化合物為二曱基乳酿胺（DmL)、二曱基羥丁醯胺（DMHB)、或二甲基羥基乙醯胺。 7. 如申請專利範圍第1項所述之光阻清除組成物，其中，以該組成物之總重量為基準，2)該溶劑之含量係於25 至99重量百分比之範圍。 8.如申請專利範圍第丨項所述之光阻清除組成物，其中2)該/谷劑更包括選自由N-曱基》比嘻燒酮（nmp)、l，3-二甲基-2-咪唑烷酮（DMI)、二曱基亞砜 (DMSO) 一甲基乙酿胺（DMAc)、二曱基曱醯胺（〇慶）、& 甲基曱醯胺(NMF)、四亞曱基颯、丁基二乙二醇(BDG)、乙基二乙二醇（EDG)、甲基二乙二醇（md⑺三甘醇 (TEG)、二乙二醇單***（DEM)、二乙二醇單丁醚 '及盆混合物所組群組中之一種以上溶劑。 20 中 9.如申請專利範圍第丨項所述尤阻清除組成物中 ' ^ l-u. 該光阻清除組成物更包括一抗腐蝕劑 2如申請專利範圍第9項所述之光阻清除組成物，其 =腐钱劑包括選自由下式2、式3及式4所示化 :組中之一猫，、,L ,, a . 組群組中之—種以上化合物： [式2] 22 201001098 OH /A^R1 R3 R2 其中，R1及R2互為相同或不同，且各自獨立為氫或羥基，且201001098 VII. Patent application scope: I A photoresist removal composition, including: U-a compound with photoresist removal power; and 5 mixture agent, which includes the following formula: Ice-like amine compound ί1] ΟΗ 〇I II /2 Rl'~β—C—— \r3 wherein R丨 is hydrogen or an alkyl group having 1 to 3 carbon atoms, and & and R3 are the same or different from each other' and are each independently hydrogen or have a hydrazine An alkyl group of up to 3 carbon atoms. 2. The photoresist removal composition according to the above aspect of the invention, wherein the compound having the photoresist removal power is an organic amine compound. 3. The photoresist removal composition of claim 2, wherein the organic private compound comprises a group selected from the group consisting of a primary amine compound, a secondary amine compound, and a tertiary amine compound. One or one of them is on 15. 4. The photoresist removal composition according to claim 2, wherein the organic amine compound comprises a compound selected from the group consisting of monoethanolamine (MEA), anthraquinone isoamyl alcohol (AIP), and 2-amino group- 1-propanol, N-methylamine ethanol (n_mAE), 3-amino-1-propanol, 4-amino-1-butanol, 2-(2-aminoethoxy)_;[_ One of a group of ethanol (AEE), 2-(2-aminoethylamino)-1-ethanol, diethanolamine (deA), triethanolamine (TEA), and hydroxyethylpiperazine (HEP) or More than one. 21 201001098 5. The photoresist removal composition of claim 1, wherein 'based on the total weight of the composition, 1) the compound having a photoresist removal power is 1 to 75 weight percent In the scope. 5 10 15 6. The photoresist removal composition according to claim 2, wherein 2) the chymamine compound is dimercapto-milk amine (DmL), dimercaptohydroxylamine (DMHB), or dimethyl hydroxyacetamide. 7. The photoresist removal composition of claim 1, wherein the solvent is present in an amount ranging from 25 to 99 weight percent based on the total weight of the composition. 8. The photoresist removal composition according to claim 2, wherein 2) the granule further comprises an alkyl group selected from the group consisting of N-fluorenyl ketone (nmp), 1,3-dimethyl- 2-imidazolidinone (DMI), dimercaptosulfoxide (DMSO) monomethyl ethanoamine (DMAc), dimethyl decylamine (Zhaoqing), & methyl decylamine (NMF), four Amidoxime, butyl diethylene glycol (BDG), ethyl diethylene glycol (EDG), methyl diethylene glycol (md (7) triethylene glycol (TEG), diethylene glycol monoethyl ether (DEM), More than one solvent in the group consisting of diethylene glycol monobutyl ether' and a mixture of pots. 20 in 9. The composition of the invention is as described in the scope of the patent application. ^ ^ Lu. The photoresist removal composition Further comprising an anti-corrosion agent 2, such as the photoresist removal composition according to claim 9, wherein the decoction agent comprises a cat selected from the group consisting of the following formula 2, formula 3 and formula 4: , L , , a . The above compound in the group: [Formula 2] 22 201001098 OH /A^R1 R3 R2 wherein R1 and R2 are the same or different from each other, and each independently is hydrogen or hydroxy, and

R3為氫、第三丁基、羧酸基（-COOH)、甲酯基 (-COOCH3)、乙醋基（-COOC2H5)、或丙醋基（-COOC3H7)， [式3]R3 is hydrogen, a third butyl group, a carboxylic acid group (-COOH), a methyl ester group (-COOCH3), an ethyl acetate group (-COOC2H5), or a propyl vine group (-COOC3H7), [Formula 3]

V/R5 N\ R6 10V/R5 N\ R6 10

其中，R4為氫或具有1至4個碳原子之烷基，且 R5及R6互為相同或不同，且各自獨立為具有1至4個碳原子之羥烷基， [式4] R7— | 、N Η 其中，R7為氫或具有1至4個碳原子之烷基。 11.如申請專利範圍第9項所述之光阻清除組成物，其 15 中，以該組成物之總重量為基準，該抗腐#劑之含量係於 0.01至5重量百分比之範圍中。 23 201001098 12. 如申請專利範圍第1項所述之光阻清除組成物，其中，該光阻清除組成物更包括一界面活性劑。 13. 如申請專利範圍第12項所述之光阻清除組成物，其中，該界面活性劑係如下式5所示之一界面活性劑： 5 [式 5]Wherein R 4 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and R 5 and R 6 are the same or different from each other, and each independently is a hydroxyalkyl group having 1 to 4 carbon atoms, [Formula 4] R 7 — And N Η wherein R 7 is hydrogen or an alkyl group having 1 to 4 carbon atoms. 11. The photoresist removal composition according to claim 9, wherein the content of the anti-corrosion agent is in the range of 0.01 to 5 weight percent based on the total weight of the composition. The photoresist removal composition of claim 1, wherein the photoresist removal composition further comprises a surfactant. 13. The photoresist removal composition according to claim 12, wherein the surfactant is a surfactant as shown in the following formula 5: 5 [Formula 5]

10 15 其中R8為氫或具有1至10個碳原子之烷基， T為氬、甲基或乙基， m為1至4之整數，且 η為1至50之整數。 I4.如申凊專利範圍第12項所述之光阻清除組成物，其中，以該組成物之總重量為基準，該界面活性劑之含係於0.01至1重量百分比範圍中。 ’、 I5·如申請專利範圍第1項所述之光阻清除組成物，发中，該光阻清除組成物係應用於6〇t：以上之製程條件中f 16. -種清除光阻之方法，該方法包括以下步驟： 1)塗覆-光阻於形成於—基板上之—導電膜絕緣膜上；、或— 2) 於該基板上形成一光阻圖案； 3) 將光阻圖案作為__、京罢 ^ ^遮罩，對該導電金屬膜或# @ 臈進行蝕刻；以及遠絕緣 24 20 201001098 4)使用如申請專利範圍第j項至第15項中任_項所述之該光阻清除組成物，清除該光阻。 17_ -種清除光阻之方法，該方法包括以下步驟： 1) 塗覆一光阻於一基板之整體表面； 5 2) 於該基板上形成一光阻圖案； 3) 於其上形成有該光阻圖案之該基板上，形成一導電金屬膜或一絕緣膜；以及 4)使用如申請專利範圍第丨項至第1 $項中任一頊所述之該光阻清除組成物，清除該光阻。 25 201001098 四、指定代表圖： (一）本案指定代表圖為：無。 (二) 本代表圖之元件符號簡單說明：無。五、本案若有化學式時，請揭示最能顯示發明特徵的化學式： ΟΗ Ο R·!——C——C ΗAnd R 8 is hydrogen or an alkyl group having 1 to 10 carbon atoms, T is argon, methyl or ethyl, m is an integer of 1 to 4, and η is an integer of 1 to 50. The photoresist removal composition according to claim 12, wherein the surfactant is contained in a range of 0.01 to 1% by weight based on the total weight of the composition. ', I5 · The photoresist removal composition according to item 1 of the patent application scope, wherein the photoresist removal composition is applied to a process condition of 6 〇t: above f 16. - a photoresist is removed The method comprises the following steps: 1) coating-resisting on a conductive film insulating film formed on a substrate; or, or 2) forming a photoresist pattern on the substrate; 3) forming a photoresist pattern As a __, 京 ^ ^ ^ mask, the conductive metal film or # @ 臈 etching; and far insulation 24 20 201001098 4) use as described in the scope of the application of the scope of items j to 15 The photoresist removes the composition and removes the photoresist. 17_ - A method for removing photoresist, the method comprising the steps of: 1) coating a photoresist on an entire surface of a substrate; 5 2) forming a photoresist pattern on the substrate; 3) forming the photoresist thereon Forming a conductive metal film or an insulating film on the substrate of the photoresist pattern; and 4) using the photoresist removing composition as described in any one of claims 1 to 1 to remove the photoresist Light resistance. 25 201001098 IV. Designated representative map: (1) The representative representative of the case is: None. (2) A brief description of the component symbols of this representative figure: None. 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: ΟΗ Ο R·!——C——C Η

[式1] 其中，Ri、R2及R3定義如說明書所述。[Formula 1] wherein Ri, R2 and R3 are as defined in the specification.