TW200951669A - Current source - Google Patents

Current source

Info

Publication number
TW200951669A
TW200951669A TW097120738A TW97120738A TW200951669A TW 200951669 A TW200951669 A TW 200951669A TW 097120738 A TW097120738 A TW 097120738A TW 97120738 A TW97120738 A TW 97120738A TW 200951669 A TW200951669 A TW 200951669A
Authority
TW
Taiwan
Prior art keywords
resistor
current
transistor
node
voltage
Prior art date
Application number
TW097120738A
Other languages
English (en)
Inventor
Chung-Hsuan Hsieh
Original Assignee
Raydium Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raydium Semiconductor Corp filed Critical Raydium Semiconductor Corp
Priority to TW097120738A priority Critical patent/TW200951669A/zh
Priority to US12/255,036 priority patent/US20090302825A1/en
Publication of TW200951669A publication Critical patent/TW200951669A/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
TW097120738A 2008-06-04 2008-06-04 Current source TW200951669A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW097120738A TW200951669A (en) 2008-06-04 2008-06-04 Current source
US12/255,036 US20090302825A1 (en) 2008-06-04 2008-10-21 Current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097120738A TW200951669A (en) 2008-06-04 2008-06-04 Current source

Publications (1)

Publication Number Publication Date
TW200951669A true TW200951669A (en) 2009-12-16

Family

ID=41399716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097120738A TW200951669A (en) 2008-06-04 2008-06-04 Current source

Country Status (2)

Country Link
US (1) US20090302825A1 (zh)
TW (1) TW200951669A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486741B (zh) * 2013-07-16 2015-06-01 Nuvoton Technology Corp 參考電壓產生電路
TWI514107B (zh) * 2012-12-19 2015-12-21 Raytheon Co 具有飽和半導體電阻器之電流鏡及其放大器電路

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010165177A (ja) * 2009-01-15 2010-07-29 Renesas Electronics Corp 定電流回路
CN102063139B (zh) * 2009-11-12 2013-07-17 登丰微电子股份有限公司 温度系数调整电路及温度补偿电路
CN102654780A (zh) * 2012-05-17 2012-09-05 无锡硅动力微电子股份有限公司 应用于集成电路的温度补偿电流基准电路
CN104765405B (zh) * 2014-01-02 2017-09-05 意法半导体研发(深圳)有限公司 温度和工艺补偿的电流基准电路
US9704591B2 (en) * 2014-12-17 2017-07-11 Sandisk Technologies Llc Temperature independent reference current generation for calibration
US20160179113A1 (en) * 2014-12-17 2016-06-23 Sandisk Technologies Inc. Temperature Independent Reference Current Generation For Calibration
CN104460812B (zh) * 2014-12-31 2016-01-13 西安电子科技大学 一种原边反馈变换器的输出整流二极管温度补偿电路
CN106155164B (zh) * 2015-04-20 2017-11-28 扬智科技股份有限公司 电子装置与其集成电路
US9929705B2 (en) * 2016-05-24 2018-03-27 Fluke Corporation Transconductance amplifier having low distortion
US9900953B2 (en) * 2016-05-31 2018-02-20 Tt Electronics Plc Temperature compensation in optical sensing system
JP6812226B2 (ja) * 2016-12-09 2021-01-13 ローム株式会社 基準電流生成回路、半導体集積回路、車両
US10199978B2 (en) * 2016-12-16 2019-02-05 Fuji Electric Co., Ltd. Multiphase driver device and three-phase driver device
CN108646846B (zh) * 2018-06-29 2023-11-10 苏州锴威特半导体股份有限公司 一种零温漂电流偏置电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2891297B2 (ja) * 1996-09-30 1999-05-17 日本電気株式会社 電圧電流変換回路
TWI259940B (en) * 2004-12-09 2006-08-11 Novatek Microelectronics Corp Voltage-controlled current source apparatus
JP4822431B2 (ja) * 2005-09-07 2011-11-24 ルネサスエレクトロニクス株式会社 基準電圧発生回路および半導体集積回路並びに半導体集積回路装置
US7772816B2 (en) * 2006-10-16 2010-08-10 Samsung Electro-Mechanics Systems, methods, and apparatuses for implementing a load regulation tuner for linear regulation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI514107B (zh) * 2012-12-19 2015-12-21 Raytheon Co 具有飽和半導體電阻器之電流鏡及其放大器電路
TWI486741B (zh) * 2013-07-16 2015-06-01 Nuvoton Technology Corp 參考電壓產生電路
US9261891B2 (en) 2013-07-16 2016-02-16 Nuvoton Technology Corporation Reference voltage generating circuits

Also Published As

Publication number Publication date
US20090302825A1 (en) 2009-12-10

Similar Documents

Publication Publication Date Title
TW200951669A (en) Current source
JP5306094B2 (ja) 基準電圧回路及び電子機器
KR101099406B1 (ko) 캐스코드 회로 및 반도체 장치
US9024678B2 (en) Current sensing circuit arrangement for output voltage regulation
US9000749B2 (en) Constant current circuit and voltage reference circuit
US9170595B2 (en) Low power reference generator circuit
TW200710847A (en) Current limit circuit and semiconductor memory device
TW200723691A (en) Semiconductor integrated circuit apparatus and electronic apparatus
TW200736875A (en) Linear regulator circuit
WO2008013724A3 (en) Improved controller for oring field effect transistor
TW200941178A (en) Constant current circuit
TW200642270A (en) Output buffer with slew rate control utilizing an inverse process dependent current reference
TW200720877A (en) Regulator circuit
US8710880B2 (en) Power-on reset circuit
JP2012004254A (ja) ダイオード回路
JP2012168899A5 (zh)
TW200740108A (en) I/O circuit
US9098102B2 (en) Reference voltage generating circuit
TW200515116A (en) Voltage regulator
TW200733522A (en) Voltage regulating power supply for noise sensitive circuits
JP6442322B2 (ja) 基準電圧回路および電子機器
WO2006099161A3 (en) A mosfet temperature compensation current source
GB201205072D0 (en) Low supply regulator having a high power supply rejection ratio
TW201701103A (zh) 參考電壓電路
WO2007098073A3 (en) Current mirror with improved output impedance at low power supplies