TW200951489A - Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system - Google Patents

Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system

Info

Publication number
TW200951489A
TW200951489A TW098108765A TW98108765A TW200951489A TW 200951489 A TW200951489 A TW 200951489A TW 098108765 A TW098108765 A TW 098108765A TW 98108765 A TW98108765 A TW 98108765A TW 200951489 A TW200951489 A TW 200951489A
Authority
TW
Taiwan
Prior art keywords
optical system
illumination
light
illumination pupil
exposure
Prior art date
Application number
TW098108765A
Other languages
English (en)
Inventor
Takashi Mori
Hirohisa Tanaka
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200951489A publication Critical patent/TW200951489A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Microscoopes, Condenser (AREA)
TW098108765A 2008-04-14 2009-03-18 Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system TW200951489A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7113908P 2008-04-14 2008-04-14
US12/371,166 US20090257043A1 (en) 2008-04-14 2009-02-13 Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system

Publications (1)

Publication Number Publication Date
TW200951489A true TW200951489A (en) 2009-12-16

Family

ID=41163722

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098108765A TW200951489A (en) 2008-04-14 2009-03-18 Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system

Country Status (6)

Country Link
US (1) US20090257043A1 (zh)
EP (1) EP2265995A1 (zh)
JP (1) JP5541604B2 (zh)
KR (1) KR20100133429A (zh)
TW (1) TW200951489A (zh)
WO (1) WO2009128332A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5201061B2 (ja) * 2008-04-29 2013-06-05 株式会社ニコン 補正フィルター、照明光学系、露光装置、およびデバイス製造方法
JP5182588B2 (ja) * 2008-04-29 2013-04-17 株式会社ニコン オプティカルインテグレータ、照明光学系、露光装置、およびデバイス製造方法
WO2010073794A1 (ja) 2008-12-24 2010-07-01 株式会社 ニコン 照明光学系、露光装置及びデバイスの製造方法
US9575412B2 (en) * 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
CN112445074B (zh) * 2019-08-29 2022-08-02 上海微电子装备（集团）股份有限公司 一种照明装置、曝光***及光刻设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP3278896B2 (ja) * 1992-03-31 2002-04-30 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
JPH07211617A (ja) * 1994-01-25 1995-08-11 Hitachi Ltd パターン形成方法，マスク、及び投影露光装置
JP4310816B2 (ja) * 1997-03-14 2009-08-12 株式会社ニコン 照明装置、投影露光装置、デバイスの製造方法、及び投影露光装置の調整方法
JP2001085315A (ja) * 1999-09-16 2001-03-30 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
KR20010085493A (ko) * 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
JP3826047B2 (ja) * 2002-02-13 2006-09-27 キヤノン株式会社 露光装置、露光方法、及びそれを用いたデバイス製造方法
JP4324957B2 (ja) * 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
WO2005048326A1 (ja) * 2003-11-13 2005-05-26 Nikon Corporation 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
TWI505329B (zh) * 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US20050237623A1 (en) * 2004-02-26 2005-10-27 Damian Fiolka Optical unit for an illumination system of a microlithographic projection exposure apparatus
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
US7283209B2 (en) * 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
DE102006013459A1 (de) * 2006-03-23 2007-09-27 Infineon Technologies Ag Anordnung zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat und Verfahren zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
JP5201061B2 (ja) * 2008-04-29 2013-06-05 株式会社ニコン 補正フィルター、照明光学系、露光装置、およびデバイス製造方法

Also Published As

Publication number Publication date
KR20100133429A (ko) 2010-12-21
WO2009128332A1 (en) 2009-10-22
JP2009260342A (ja) 2009-11-05
US20090257043A1 (en) 2009-10-15
EP2265995A1 (en) 2010-12-29
JP5541604B2 (ja) 2014-07-09

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