,200941622 六、發明說明 【發明所屬之技術領域】 本發明係關於被使用對例如半導體晶圓等之被處理體 施予真空處理之真空處理裝置的裝載鎖定裝置及如此裝載 鎖定裝置中的基板冷卻方法。 【先前技術】 〇 在半導體裝置之製造工程中，大多使用對屬於被處理 基板之半導體晶圓，在真空環境下執行成膜處理或蝕刻處 理等的真空處理。最近，自如此之真空處理之效率化之觀 點，及抑制氧化及沾污等之污染的觀點來看，注目有將多 數真空處理單元連結於保持真空之搬運室，藉由被設置在 該搬運室之搬運裝置，能夠將晶圓搬運至各真空處理單元 之叢集工具型之多腔室真空處理系統（例如日本特開 2000-208589 號公報）。 〇 在如此之多腔室處理系統中，爲了將半導體晶圓從放 置於大氣中之晶圓匣盒搬運至保持真空之搬運室，在搬運 室和晶圓匣盒之間設置裝載鎖定室，經該裝載鎖定室搬運 半導體晶圓。 再者，於將如此之多腔室處理系統適用於成膜處理般 之高溫處理之時，被處理體之半導體晶圓從真空處理單元 直接以500 °c左右之高溫被取出，而被搬運至裝載鎖定室 。但是，在如此之高溫狀態下，當晶圓曝露於大氣時，晶 圓則氧化。再者，當如此之高溫的半導體晶圓直接被收納 -5- 200941622 於收納容器時，通常有樹脂製之收納容器溶解等之不當情 形。 爲了迴避如此之不當情形’雖然等到不會產生如此之 不當情形的溫度之後再執行半導體晶圓之大氣曝露即可’ 但是生產率則下降。因此’執行在裝載鎖定室配置具備有 用以冷卻晶圓之冷卻機構的冷卻板’並且沖洗裝載鎖定室 內，在使晶圓載置或接近於冷卻板之狀態下’於使裝載鎖 定室內從真空返回至大氣壓之期間’冷卻半導體晶圓。 © 此時，當半導體晶圓急速被冷卻時’因晶圓表面背面 之熱膨脹差引起晶圓變形’半導體晶圓之中心部或是邊緣 部自冷卻板離開’或是在半導體晶圓之中心部和邊緣部至 冷卻板之距離爲不同，冷卻效率下降，其結果冷卻時間變 長，或以高溫之狀態直接曝露於大氣中。 爲了不產生如此之半導體晶圓之變形’於裝載鎖定室 返回至大氣壓之時，管理壓力的上昇速度’或於半導體晶 圓接近於冷卻板之時，管理晶圓之高度位置’對晶圓之每 〇 溫度，作成規定該些適當組合之沖洗處理程式。 但是，半導體晶圓之變形之程度隨著形成在其上方之 膜種而有所不同，如此之膜種對每個使用者而言爲巨大數 ，要對每膜種製作最適當之沖洗處理程式極爲困難。因此 ，由於被形成在半導體晶圓上之膜種，即使使用每晶圓溫 度的沖洗處理程式，亦有可能產生上述般之半導體晶圓之 變形，而產生上述不當情形。 .200941622 【發明內容】 本發明之目的係提供可以一邊極力抑制基板之變形， 一邊以實用性之速度冷卻基板之裝載鎖定裝置。 本發明之其他目的係提供可以實現如此之基板之冷卻 的裝載鎖定裝置中之基板冷卻方法。 若藉由本發明之第1觀點，則提供一種裝載鎖定裝置 ，係屬於使用於將基板從大氣環境搬運至保持至真空之真 G 空室，並從上述真空室將高溫之基板搬運至上述大氣環境 之時的裝載鎖定裝置，具備：容器，被設置成可在對應於 真空室之壓力和大氣壓之間變動壓力；壓力調整機構，用 於上述容器內與上述真空室連通之時，將上述容器內之壓 力調整成對應於上述真空室之壓力，並於上述容器內與上 述大氣環境之空間連通之時，將上述容器內之壓力調整成 大氣壓；冷卻構件，具有冷卻機構，並且被設置在上述容 器內，載置基板或是接近被配置，用以冷卻基板；基板變 ❹ 形檢測部，用以檢測出上述容器內之基板的變形；和控制 機構，上述容器內被調整成對應於上述真空室之壓力，高 溫之基板從上述真空室被搬入至上述容器內之後，至上述 容器內之壓力被調整成大氣壓爲止之期間的基板冷卻期間 ，於上述基板變形檢測部檢測出特定値以上之基板之變形 之時，控制成使基板之冷卻緩和，使基板之變形復原。 在上述第1觀點中，上述控制機構可以在藉由上述壓 力調整機構使上述容器內之壓力上升之途中，上述基板變 形檢測部檢測出特定値以上之基板之變形時，停止壓力之 200941622 上升，或是使壓力降低，來緩和冷卻。此時，於上述控制 機構使冷卻緩和之後，上述基板變形檢測部檢測出基板之 變形小於特定値之時，上述控制機構則使上述容器內之壓 力上升再次開始爲佳。 再者，可以又具備基板支撐銷，被設置成可對上述冷 卻構件突出沉沒，在自上述冷卻構件突出之狀態接取基板 ，在其狀態下降，依此使基板載置或接近於上述冷卻構件 ，上述控制機構係藉由於上述基板變形檢測部檢測出特定 © 値以上之基板變形時，使上述基板支撐銷上升，或是於上 述基板支撐銷支撐基板而下降之時，使下降停止，來緩和 冷卻此時，於上述控制機構使冷卻緩和之後，上述基板變 形檢測部檢測出基板之變形小於特定値之時，上述控制機 構使是上述支撐銷返回至原來之位置，或是上述基板支撐 銷之下降停止之時，上述基板支撐銷再次開始下降爲佳。 並且，上述基板變形檢測部具有測量基板中心部之變 位的第1感測器，和測量基板邊緣部之變位的第2感測器 © ，可以由該些第1感測器之檢測値及第2感測器之感測値 之差檢測出基板之變形。此時，上述第1感測器及上述第 2感測器可以適用雷射移位計。 再者，上述真空室之構成可以設爲具備有搬運機構之 搬運室，該搬運機構係用以將基板搬運至在真空中對基板 施予高溫之處理的真空處理室，在上述真空處理室對基板 施予高溫之處理之後，高溫之基板經上述真空室被搬運至 上述容器內。 -8- .200941622 近於上述冷卻構件，藉由於檢測出特定値以上之基板變形 時，使上述基板支撐銷上升，或是於上述基板支撐銷支撐 基板而下降之時，使下降停止，來緩和冷卻。此時，檢測 出緩和冷卻之基板之變形小於特定値之時，使支撐銷返回 至原來之位置，或是上述基板支撐銷之下降停止之時丨上 述基板支撐銷再次開始下降爲佳。 若藉由本發明，因高溫之基板從真空室被搬入至容器 φ 內之後，到容器內之壓力被調整成大氣壓之期間的基板冷 卻期間，基板變形檢測手段檢測出特定値以上之基板變形 之時，控制成緩和基板之冷卻，使基板之變形復原，故可 以一邊極力抑制基板之變形，一邊以實用性之速度冷卻基 板。 【實施方式】 以下參照附件圖面針對本發明之實施型態予以說明。 Ο 第1圖爲表示搭載本發明之一實施型態所涉及之裝載 鎖定裝置之多腔室型之真空處理系統之槪略構造的水平剖 面圖。 真空處理系統具備有在真空中執行例如成膜處理般之 高溫處理的4個真空處理單元1、2、3、4，該些真空處理 單元1〜4爲各對應於構成六角形狀之搬運室5之4個邊 。再者，在搬運室5之其他兩邊，各設置有本實施型態所 涉及之裝載鎖定裝置6、7。再與該些裝載鎖定裝置6、7 之搬運室5相反之側設置有搬入搬出室8,在與搬入搬出 -10- 200941622 若藉由本發明之第2觀點，則提供一種基板冷卻方法 ，係屬於裝載鎖定裝置中的基板冷卻方法，該裝載鎖定裝 置係容器，被設置成可在對應於真空室之壓力和大氣壓之 間變動壓力；壓力調整機構，用於上述容器內與上述真空 室連通之時，將上述容器內之壓力調整成對應於上述真空 室之壓力，並於上述容器內與上述大氣環境之空間連通之 時，將上述容器內之壓力調整成大氣壓；和冷卻構件，具 有冷卻機構，並且被設置在上述容器內，載置基板或是接 近被配置，用以冷卻基板，用於將基板從大氣環境搬運至 保持於真空之真空室，並從上述真空室將高溫之基板搬運 至上述大氣環境之時，具有：上述容器內被調整成對應於 上述真空室之壓力，高溫之基板從上述真空室被搬入至上 述容器內之後，至上述容器內之壓力被調整成大氣壓爲止 之期間的基板冷卻期間，檢測出上述容器內之基板變形的 步驟；和於檢測出基板變形爲特定値以上之時，緩和基板 之冷卻，使基板之變形復原。 Θ 在上述第2觀點中，可以藉由上述壓力調整機構使上 述容器內之壓力上升之途中，檢測出特定値以上之基板之 變形時，停止壓力之上升，或是使壓力降低，來緩和冷卻 。此時，緩和冷卻之後，檢測出基板之變形小於特定値之 時，使上述容器內之壓力上升再次開始爲佳。 再者，可以上述裝載鎖定裝置又具備基板支撐銷，被 設置成可對上述冷卻構件突出沉沒，在自上述冷卻構件突 出之狀態接取基板，在其狀態下降，依此使基板載置或接 -9- 200941622 室8之裝載鎖定裝置6、7相反之側，設置有安裝可收容 當作被處理基板之半導體晶圓W之前開式晶圓盒（FOUP :Front Opening Unified Pod)之晶舟 9、10、11。真空處 理單元1、2' 3、4，其中在處理板上載置被處理體之狀態 下，執行高溫之特定真空處理，例如成膜處理。 真空處理單元1〜4係如同圖所示般，經閘閥G而連 接於搬運室5之各邊，該些藉由開放所對應之閘閥G而與 φ 搬運室5連通，藉由關閉所對應之閘閥G而自搬運室5阻 斷。再者，裝載鎖定裝置6、7係經第1閘閥G1而被連接 於搬運室5之殘留的各邊，再者，經第2閘閥G2而被連 接於搬入搬出室8。然後，裝載鎖定室6、7係藉由開放第 1閘閥G1，而與搬運室5連通，藉由關閉第1閘閥G1， 自搬運室阻斷。再者，藉由開放第2閘閥G2，與搬入搬 出室8連通，藉由關閉第2閘閥G2，自搬入搬出室8阻 斷。 © 在搬運室5內，設置有對真空處理單元1〜4、裝載鎖 定裝置6、7，執行半導體晶圓W之搬入搬出的搬運裝置 12。該搬運裝置12係被配設在搬運室5之略中央，在可 旋轉及伸縮之旋轉伸縮部13之前端，具有支撐半導體晶 圓W之兩個支撐臂14a、14b，該些兩個支撐臂14a、14b 係以互相朝向相反方向之方式安裝於旋轉、伸縮部13。該 搬運室5內被保持於特定之真空度。 在搬入搬出室8之晶圓收納容器之前開式晶圓盒F安 裝用之3個晶舟9、1 0、1 1各設置有無圖示之快門，在該 -11 - 200941622 些晶舟9、10、11收容晶圓W，或是直接安裝空的前開式 晶圓盒F，於被安裝之時，打開快門一邊防止外氣之侵入 一邊與搬入搬出室8連通。再者，在搬入搬出室8之側面 ，設置有對準腔室15，在此執行半導體晶圓W之對準。 在搬入搬出室8內，設置有對前開式晶圓盒F執行半 導體晶圓W之搬入搬出及對裝載鎖定裝置6、7執行半導 體晶圓W之搬入搬出的搬運裝置16。該搬運裝置16具有 多關節臂構造，沿著前開式晶圓盒F之配列方向而可在軌 Q 道18上行走，在其前端之把手17上裝載半導體晶圓W 而執行其搬運。 該真空處理系統係具有由微處理器（電腦）所構成之 製程控制器20，各構成部連接於該製程控制器20而成爲 被控制之構成。再者，在製程控制器20上，連接有由操 作員爲了管理真空處理系統而執行指令輸入操作之鍵盤， 或使電漿處理裝置之運轉狀況可觀視而予以顯示之顯示器 等所構成之使用者介面21。 〇BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a load lock device using a vacuum processing device that applies a vacuum treatment to a processed object such as a semiconductor wafer, and a substrate cooling in such a load lock device method. [Prior Art] In the manufacturing process of a semiconductor device, a semiconductor wafer belonging to a substrate to be processed is often used, and a vacuum process such as a film formation process or an etching process is performed in a vacuum environment. Recently, from the viewpoint of the efficiency of vacuum treatment and the suppression of contamination such as oxidation and contamination, attention has been paid to connecting a plurality of vacuum processing units to a transfer chamber that holds a vacuum, and is disposed in the transfer chamber. The carrier device is capable of transporting a wafer to a multi-chamber vacuum processing system of a cluster tool type of each vacuum processing unit (for example, JP-A-2000-208589). In such a multi-chamber processing system, in order to transport a semiconductor wafer from a wafer cassette placed in the atmosphere to a transfer chamber that holds a vacuum, a load lock chamber is provided between the transfer chamber and the wafer cassette. The load lock chamber carries the semiconductor wafer. Furthermore, when such a multi-chamber processing system is applied to a high-temperature processing such as a film forming process, the semiconductor wafer of the object to be processed is taken out from the vacuum processing unit at a high temperature of about 500 ° C, and is transported to Load the lock chamber. However, at such high temperatures, the crystal grains oxidize when the wafer is exposed to the atmosphere. In addition, when such a high-temperature semiconductor wafer is directly stored in a storage container, there is usually an improper situation in which the resin storage container is dissolved. In order to avoid such an inappropriate situation, the atmospheric exposure of the semiconductor wafer can be performed after the temperature of such an improper situation is not generated, but the productivity is lowered. Therefore, 'the cooling plate configured to cool the cooling mechanism of the wafer is disposed in the load lock chamber and flushes the load lock chamber, and the wafer is placed in or close to the cooling plate to return the vacuum from the vacuum to the load lock chamber. Cooling the semiconductor wafer during atmospheric pressure. © At this time, when the semiconductor wafer is rapidly cooled, 'the wafer is deformed due to the difference in thermal expansion of the back surface of the wafer. 'The center or edge of the semiconductor wafer leaves the cooling plate' or at the center of the semiconductor wafer. The distance from the edge portion to the cooling plate is different, and the cooling efficiency is lowered, and as a result, the cooling time becomes long, or the temperature is directly exposed to the atmosphere in a state of high temperature. In order not to produce such a deformation of the semiconductor wafer 'the rising speed of the management pressure when the load lock chamber returns to the atmospheric pressure' or when the semiconductor wafer is close to the cooling plate, the height position of the wafer is managed 'to the wafer For each enthalpy temperature, a rinsing process that defines the appropriate combination is made. However, the degree of deformation of the semiconductor wafer varies depending on the type of film formed thereon. Such a film type is a large number for each user, and it is necessary to prepare the most appropriate processing program for each film type. Extremely difficult. Therefore, due to the film type formed on the semiconductor wafer, even if a rinsing process per wafer temperature is used, it is possible to cause deformation of the above-described semiconductor wafer, which causes the above-mentioned improper situation. BACKGROUND OF THE INVENTION The object of the present invention is to provide a load lock device capable of cooling a substrate at a practical speed while suppressing deformation of the substrate as much as possible. Another object of the present invention is to provide a substrate cooling method in a load lock device that can achieve such cooling of a substrate. According to the first aspect of the present invention, there is provided a load lock device which is a true G empty chamber for transporting a substrate from an atmospheric environment to a vacuum, and transporting a high temperature substrate from the vacuum chamber to the atmosphere The load lock device at the time includes a container configured to vary a pressure between a pressure corresponding to the vacuum chamber and an atmospheric pressure, and a pressure adjusting mechanism for connecting the inside of the container to the vacuum chamber The pressure is adjusted to correspond to the pressure of the vacuum chamber, and the pressure in the container is adjusted to atmospheric pressure when the container is in communication with the space of the atmosphere; the cooling member has a cooling mechanism and is disposed in the container a substrate is disposed or disposed to cool the substrate; a substrate deforming detecting portion for detecting deformation of the substrate in the container; and a control mechanism, wherein the container is adjusted to correspond to the vacuum chamber The pressure, the high temperature substrate is carried into the container from the vacuum chamber, and then into the container During force is adjusted until the atmospheric pressure during cooling the substrate, the substrate to the strain detection unit detects that the deformation of the substrate than the specific Zhi, controlled cooling of the substrate is alleviated, so that deformation of the substrate recover it. In the above-described first aspect, the control means may increase the pressure of the stoppage 200941622 when the substrate deformation detecting unit detects deformation of the substrate of a predetermined thickness or more while the pressure in the container is increased by the pressure adjustment mechanism. Or reduce the pressure to ease the cooling. At this time, when the substrate deformation detecting unit detects that the deformation of the substrate is smaller than a specific flaw after the control mechanism has cooled the cooling, the control means preferably starts the pressure increase in the container again. Further, the substrate supporting pin may be further provided to be capable of sinking and sinking the cooling member, picking up the substrate in a state of being protruded from the cooling member, and lowering the state thereof, thereby causing the substrate to be placed or close to the cooling member. When the substrate deformation detecting unit detects deformation of the substrate of a specific thickness or more, the control unit raises the substrate support pin or lowers the substrate support pin when the substrate support pin is lowered. At the time of cooling, after the substrate deformation detecting unit detects that the deformation of the substrate is less than a specific flaw after the control mechanism has cooled down, the control mechanism returns the support pin to the original position or the substrate support pin. When the lowering is stopped, it is preferable that the substrate supporting pin starts to fall again. Further, the substrate deformation detecting unit includes a first sensor that measures displacement of the center portion of the substrate, and a second sensor © that measures displacement of the edge portion of the substrate, and can be detected by the first sensors. And the difference between the sensed turns of the second sensor detects the deformation of the substrate. In this case, the first sensor and the second sensor can be applied to a laser shift meter. Further, the vacuum chamber may be configured as a transfer chamber including a transport mechanism for transporting the substrate to a vacuum processing chamber for applying a high temperature to the substrate in a vacuum, in the vacuum processing chamber pair After the substrate is subjected to a high temperature treatment, the substrate having a high temperature is transported into the container through the vacuum chamber. -8-.200941622 In the case of the above-described cooling member, when the substrate is deformed by a specific thickness or more, the substrate supporting pin is raised, or when the substrate supporting pin supports the substrate and is lowered, the lowering is stopped to alleviate cool down. At this time, when it is detected that the deformation of the substrate to be cooled and cooled is less than a specific flaw, the support pin is returned to the original position, or when the lowering of the substrate support pin is stopped, the substrate support pin starts to fall again. According to the present invention, when the substrate having a high temperature is carried into the container φ from the vacuum chamber, the substrate deformation detecting means detects the deformation of the substrate of a predetermined thickness or more during the substrate cooling period during which the pressure in the container is adjusted to the atmospheric pressure. By controlling the cooling of the substrate and restoring the deformation of the substrate, it is possible to cool the substrate at a practical speed while suppressing the deformation of the substrate as much as possible. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Fig. 1 is a horizontal cross-sectional view showing a schematic configuration of a multi-chamber vacuum processing system equipped with a load lock device according to an embodiment of the present invention. The vacuum processing system is provided with four vacuum processing units 1, 2, 3, and 4 which perform high-temperature processing such as film formation processing in a vacuum, and the vacuum processing units 1 to 4 correspond to the transfer chambers 5 constituting the hexagonal shape. 4 sides. Further, on the other two sides of the transfer chamber 5, load lock devices 6, 7 according to the present embodiment are provided. Further, the loading/unloading chamber 8 is provided on the side opposite to the transport chamber 5 of the load lock devices 6 and 7. The loading and unloading 10-200941622 provides a substrate cooling method according to the second aspect of the present invention. a substrate cooling method in a load lock device, the load lock device being configured to vary a pressure between a pressure corresponding to a vacuum chamber and an atmospheric pressure; and a pressure adjustment mechanism for communicating with the vacuum chamber in the container Adjusting the pressure in the container to correspond to the pressure of the vacuum chamber, and adjusting the pressure in the container to atmospheric pressure when the container is in communication with the space of the atmosphere; and the cooling member has a cooling mechanism. And disposed in the container, the substrate is placed or disposed close to the substrate for transporting the substrate from the atmospheric environment to the vacuum chamber held in the vacuum, and the high temperature substrate is transported from the vacuum chamber to the above In the atmospheric environment, the container is adjusted to correspond to the pressure of the vacuum chamber, and the substrate of high temperature is from the above After the vacuum chamber is carried into the container, the substrate is deformed during the substrate cooling period until the pressure in the container is adjusted to the atmospheric pressure, and the substrate is deformed to a specific thickness or more. At the same time, the cooling of the substrate is moderated, and the deformation of the substrate is restored. Θ In the second aspect, when the pressure in the container is increased by the pressure adjusting mechanism, when the deformation of the substrate of a predetermined thickness or more is detected, the pressure is stopped or the pressure is lowered to reduce the cooling. . At this time, after the relaxation and cooling are detected, when the deformation of the substrate is less than a specific flaw, it is preferable to increase the pressure inside the container again. Furthermore, the load lock device may further include a substrate support pin that is provided so as to be able to sink and sink the cooling member, and pick up the substrate in a state of being protruded from the cooling member, and the state thereof is lowered, whereby the substrate is placed or connected. -9- 200941622 The opposite side of the load lock devices 6, 7 of the chamber 8 is provided with a wafer boat 9 for mounting a semiconductor wafer W as a substrate to be processed (FOUP: Front Opening Unified Pod) , 10, 11. The vacuum processing unit 1, 2' 3, 4, in which a specific vacuum process of high temperature, for example, a film forming process, is performed in a state where the object to be processed is placed on the processing board. The vacuum processing units 1 to 4 are connected to the respective sides of the transfer chamber 5 via the gate valve G as shown in the figure, and are connected to the φ transport chamber 5 by opening the corresponding gate valve G, and are closed by the corresponding The gate valve G is blocked from the transfer chamber 5. Further, the load lock devices 6 and 7 are connected to the remaining sides of the transfer chamber 5 via the first gate valve G1, and are connected to the carry-in/out chamber 8 via the second gate valve G2. Then, the load lock chambers 6 and 7 communicate with the transfer chamber 5 by opening the first gate valve G1, and are closed from the transfer chamber by closing the first gate valve G1. In addition, the second gate valve G2 is opened to communicate with the loading/unloading chamber 8, and the second gate valve G2 is closed, and the loading/unloading chamber 8 is blocked. © In the transfer chamber 5, a transport device 12 that performs loading and unloading of the semiconductor wafer W to the vacuum processing units 1 to 4 and the load lock devices 6 and 7 is provided. The conveying device 12 is disposed at a slightly center of the transfer chamber 5, and has two support arms 14a, 14b for supporting the semiconductor wafer W at the front end of the rotatable and expandable rotary stretchable portion 13, the two support arms The 14a and 14b are attached to the rotating and expanding portion 13 so as to face each other in opposite directions. The inside of the transfer chamber 5 is maintained at a specific degree of vacuum. Before the wafer storage container of the loading and unloading chamber 8, the three wafer boats 9 for mounting the open wafer cassette F are provided with shutters (not shown), and some of the wafer boats 9 are in the -11 - 200941622. 10, 11 accommodates the wafer W, or directly mounts the empty front-opening cassette F, and when it is mounted, opens the shutter to prevent the intrusion of outside air and communicates with the loading/unloading chamber 8. Further, on the side of the loading/unloading chamber 8, an alignment chamber 15 is provided, and alignment of the semiconductor wafer W is performed there. In the loading/unloading chamber 8, a conveying device 16 that performs loading and unloading of the semiconductor wafer W to the front opening wafer cassette F and loading and unloading of the semiconductor wafer W to the loading lock devices 6 and 7 is provided. The conveying device 16 has a multi-joint arm structure, and is movable along the rail path 18 along the arrangement direction of the front opening wafer cassette F, and the semiconductor wafer W is loaded on the handle 17 at the front end thereof to carry it. The vacuum processing system has a process controller 20 composed of a microprocessor (computer), and each component is connected to the process controller 20 to be controlled. Further, the process controller 20 is connected to a user including a keyboard for performing an instruction input operation by the operator to manage the vacuum processing system, or a display for displaying the operation state of the plasma processing apparatus in a viewable manner. Interface 21. 〇
再者，在製程控制器20連接有儲存用以在製程控制 器20之控制下實現在真空處理系統所實行之各種處理的 控制程式，或按處理條件使真空處理系統之各構成部實行 處理之程式，例如與成膜處理有關之成膜處理程式、與晶 圓之搬運有關之搬運處理程式，與裝載鎖定裝置之壓力調 整等有關之沖洗處理程式等之記憶部22。如此之處理程式 係被記憶於記億部22之中的記憶媒體（無圖示）。記憶 媒體即使爲硬碟般之固定者亦可，即使爲CD-ROM、DVD -12- 200941622 、快閃記憶體等之可搬運性者亦可。再者，即使自其他裝 置經例如專用迴線適當傳送處理程式亦可。 然後，依其所需，以來自使用者介面21之指示等自 記億部22叫出任意之處理程式，使製程控制器20實行， 依此，在製程控制器20之控制下，執行真空處理系統之 所欲處理。再者，製程控制器20係在裝載鎖定室6、7， 根據標準性之沖洗處理程式執行處理之過程中，能夠以抑 φ 制晶圓之變形之方式，控制壓力或晶圓W之高度。 接著，針對本實施型態所涉及之裝載鎖定裝置6、7 予以詳細說明。 第2圖爲表示本實施型態所涉及之裝載鎖定裝置之剖 面圖。裝載鎖定裝置6(7)具有容器31，在容器31內以 被腳部33支撐之狀態下設置有載置或接近晶圓W而冷卻 晶圓W之冷卻板32。 在容器31之一方之側臂設置有與被保持真空之搬運 φ 室5連通之開口 34’在與該對向之側壁’設置有與被大氣 壓之搬入搬出室8連通之開口 35。然後’開口 34係藉由 第1閘閥G1而能夠開關’開口 35係藉由第2閘閥G2而 能夠開關。 在容器31之底部設置有用以使容器31內抽真空排氣 之排氣口 36 ’和用以將沖洗氣體導入至容器31內之沖洗 氣體導入口 3、7。在排氣口 36連接有排氣管41，在該排 氣管41設置有開關閥42、排氣速度調整閥43及真空閥 44。再者，在沖洗氣體導入口 37’連接有將沖洗氣體導入 -13- 200941622 至容器31內之沖洗氣體導入配管45，該沖洗導入配管45 係自沖洗氣體源48延伸，在其途中，設置有開關閥46及 流量調節閥47。 然後，在與真空側枝搬運室5之間，執行晶圓W之 搬運之時，以關閉開關閥46，打開開關閥42之狀態，調 節排氣速度調整閥43而以特定速度藉由真空泵44經排氣 管36排氣容器31內，並且將容器31內之壓力設爲對應 於搬運室5內之壓力的壓力，在其狀態下打開第1閘閥 © G1，連通容器31和搬運室5之間。再者，在與大氣側之 搬入搬出室8之間，執行晶圓W之搬運之時’以關閉開 關閥42，打開開關閥46之狀態，調節流量調節閥47將沖 洗氣體從沖洗氣體源以例如特定流量經沖洗氣體導入管45 導入至容器31內，而使其中之壓力成爲大氣壓附近’在 其狀態下打開第2閘閥G2使容器3 1和搬入搬出室8之間 連通。並且，沖洗氣體之導入方式，由防止產生顆粒之觀 點來看，雖然舉出在導入初期，通過由陶瓷多孔體所構成 © 之真空破壞過濾器（註冊商標）（無圖式）而予以沖洗’ 並在成爲某壓力之後，以特定流量予以沖洗之例’但是該 方法即使爲其他之方法亦可。 開關閥42、排氣速度調整閥43、流量調節閥47以及 開關閥46係根據藉由壓力計63所測量之容器3 1內之壓 力，由壓力調整機構49所控制，藉由控制該些閥’在大 氣壓和真空之間使容器31內變化。該壓力調整機構49也 根據來自製程控制器2 0之指令，執行該些閥之控制。 -14- 200941622 在冷卻板32設置有能夠對冷卻板32之表面突出沉沒 之晶圓搬運用之3根（僅圖式兩根）之晶圓支撐銷50,該 些晶圓支撐銷50係被固定於支撐板51。然後，晶圓支撐 銷50係藉由可調節上升位置之馬達等之驅動機構53，使 桿體52升降，依此晶支撐板51進行升降。並且，符號54 爲波紋管。 冷卻板32形成有冷卻媒體流路55，在該冷卻媒體流 0 路55連接有冷卻導入配管56及冷卻媒體排出配管57，自 無圖式之冷卻媒體供給部使冷卻水等之冷卻媒體流通，而 可冷卻被載置之晶圓W。 容器3 1之頂壁3 1 a係由透明材料，例如由玻璃所構 成，在其上於對應於晶圓中心部之位置和晶圓邊緣部之位 置各設置有移位感測計6 1、62。該些兩個移位感測器6 1 、62構成晶圓之變形檢測部。該些變位感測器61、62具 有例如測量至晶圓爲止之距離的功能。作爲該移位感測器 Φ 6 1、62舉出雷射移位計之例。 製程控制器20也控制裝載鎖定裝置6 ( 7 )，接受來 自移位感測器61、62之距離資料，控制壓力調整機構49 或驅動機構53，控制容器31內之壓力或晶圓w之高度位 置。 接著，針對以上構成之多腔室型之真空處理系統之動 作，以本實施型態之裝載鎖定裝置6、7爲中心予以說明 〇 首先，藉由搬運裝置16自連接於搬入搬出室8之前 -15- 200941622 開式晶圓盒F取出晶圓w，搬入至裝載鎖定裝置6(或是 7)之容器31。此時’裝載鎖定裝置6之容器31內被調整Furthermore, the process controller 20 is connected with a control program for storing various processes performed by the vacuum processing system under the control of the process controller 20, or for processing the components of the vacuum processing system according to processing conditions. The program includes, for example, a film forming processing program relating to film forming processing, a transport processing program relating to transport of wafers, a memory processing unit such as a processing program relating to pressure adjustment of a load lock device, and the like. Such a processing program is memorized in a memory medium (not shown) among the billions. Memory media can be fixed even if it is a hard disk, even for CD-ROM, DVD -12- 200941622, flash memory, etc. Furthermore, even if the processing program is appropriately transmitted from another device via, for example, a dedicated return line. Then, according to the instructions from the user interface 21, the self-reporting unit 22 calls out an arbitrary processing program to cause the process controller 20 to be executed. Accordingly, the vacuum processing system is executed under the control of the process controller 20. What you want to do. Further, the process controller 20 is in the load lock chambers 6, 7 and can control the pressure or the height of the wafer W by suppressing the deformation of the wafer during the process of performing the processing according to the standard rinsing processing program. Next, the load lock devices 6 and 7 according to the present embodiment will be described in detail. Fig. 2 is a cross-sectional view showing the load lock device according to the embodiment. The load lock device 6 (7) has a container 31, and a cooling plate 32 that mounts or approaches the wafer W to cool the wafer W is provided in the container 31 while being supported by the leg portion 33. An opening 34' communicating with the conveyance φ chamber 5 held by the vacuum is provided on one of the side arms of the container 31, and an opening 35 communicating with the atmospheric pressure loading/unloading chamber 8 is provided in the opposite side wall. Then, the opening 34 is switchable by the first gate valve G1. The opening 35 is switchable by the second gate valve G2. An exhaust port 36' for evacuating the inside of the container 31 and a flushing gas introduction port 3, 7 for introducing the flushing gas into the container 31 are provided at the bottom of the container 31. An exhaust pipe 41 is connected to the exhaust port 36, and an exhaust valve 41, an exhaust speed adjusting valve 43, and a vacuum valve 44 are provided in the exhaust pipe 41. Further, the flushing gas introduction port 37' is connected to a flushing gas introduction pipe 45 for introducing the flushing gas into the container 31, and the flushing introduction pipe 45 is extended from the flushing gas source 48, and is provided on the way. The switching valve 46 and the flow regulating valve 47. Then, when the transfer of the wafer W is performed between the vacuum side branch transfer chamber 5, the on-off valve 46 is closed, the on-off valve 42 is opened, the exhaust speed adjustment valve 43 is adjusted, and the vacuum pump 44 is passed through the vacuum pump at a specific speed. The exhaust pipe 36 is disposed in the exhaust container 31, and the pressure in the container 31 is set to a pressure corresponding to the pressure in the transfer chamber 5, and the first gate valve © G1 is opened in the state thereof, and the communication container 31 and the transfer chamber 5 are opened. . Further, when the transfer of the wafer W is performed between the loading and unloading chamber 8 on the atmospheric side, the state in which the on-off valve 42 is opened and the on-off valve 46 is opened is adjusted, and the flow regulating valve 47 is adjusted to purge the gas from the source of the flushing gas. For example, the specific flow rate is introduced into the container 31 through the flushing gas introduction pipe 45, and the pressure therein is brought to the vicinity of the atmospheric pressure. In this state, the second gate valve G2 is opened to communicate between the container 3 1 and the loading/unloading chamber 8. In addition, the method of introducing the flushing gas is rinsing by a vacuum-breaking filter (registered trademark) (not shown) which is composed of a ceramic porous body from the viewpoint of preventing the generation of particles. And after a certain pressure, it is washed with a specific flow rate 'but this method can be used for other methods. The on-off valve 42, the exhaust speed adjustment valve 43, the flow rate adjustment valve 47, and the on-off valve 46 are controlled by the pressure adjustment mechanism 49 according to the pressure in the vessel 31 measured by the pressure gauge 63, by controlling the valves 'The inside of the container 31 is changed between atmospheric pressure and vacuum. The pressure adjustment mechanism 49 also performs control of the valves in accordance with commands from the process controller 20. -14- 200941622 The cooling plate 32 is provided with three (two drawings only) wafer support pins 50 capable of projecting and sinking the surface of the cooling plate 32, and the wafer support pins 50 are It is fixed to the support plate 51. Then, the wafer supporting pin 50 is moved by the driving mechanism 53 of the motor or the like which can adjust the rising position, and the rod body 52 is moved up and down, whereby the crystal supporting plate 51 is lifted and lowered. Also, symbol 54 is a bellows. The cooling plate 32 is formed with a cooling medium flow path 55, and a cooling introduction pipe 56 and a cooling medium discharge pipe 57 are connected to the cooling medium flow path 55, and a cooling medium such as cooling water is distributed from the cooling medium supply unit of the non-pattern. The wafer W to be placed can be cooled. The top wall 3 1 a of the container 3 1 is made of a transparent material, for example, glass, and a displacement sensor 6 is disposed on each of the positions corresponding to the center of the wafer and the edge of the wafer. 62. The two shift sensors 6 1 and 62 constitute a deformation detecting portion of the wafer. The displacement sensors 61, 62 have a function of, for example, measuring the distance to the wafer. An example of a laser shift meter is given as the shift sensor Φ 6 1 and 62. The process controller 20 also controls the load lock device 6 (7), accepts distance data from the shift sensors 61, 62, controls the pressure adjustment mechanism 49 or the drive mechanism 53, and controls the pressure within the container 31 or the height of the wafer w. position. Next, the operation of the multi-chamber vacuum processing system configured as described above will be described focusing on the load lock devices 6 and 7 of the present embodiment. First, before the transfer device 16 is connected to the loading/unloading chamber 8 - 15-200941622 The open wafer cassette F takes out the wafer w and carries it into the container 31 of the load lock device 6 (or 7). At this time, the container 31 of the load lock device 6 is adjusted.
爲大氣環境’之後在開放第2閘閥G2之狀態搬入晶圓W 〇 然後’將容器31內真空排氣至成爲對應於搬運室5 之壓力爲止’開放第1閘閥而藉由搬運裝置12自容器31 內接取晶圓W’打開任一真空處理單元之閘閥^將晶圓W 搬入至其中’對晶圓W執行成膜等之高溫的真空處理。 © 於結束真空處理之時點’開放閘閥G，自搬運裝置12 所對應之真空處理單元搬出晶圓W，開放裝載鎖定裝置6 及7中之任一第1閘閥G1，將晶圓w搬入至容器31內， 藉由流通於冷卻板32之冷卻媒體流路55之冷卻媒體，一 邊冷卻晶圓W，一邊將沖洗氣體導入至容器31內，使其 中設爲大氣壓（晶圓冷卻期間）。然後，打開第2閘閥， 藉由搬運裝置16，在前開式晶圓盒F收納處理後之晶圓 W。 ❹ 並且’針對兩個裝載鎖定裝置6、7，即使裝載鎖定裝 置6成爲搬入專用，裝置鎖定裝置7成爲搬出專用亦可。 如上述般，詳細說明於晶圓W之真空處理結束從搬 運裝置12自所對應之真空處理單元搬出晶圓w之後之晶 圓冷卻期間之操作。 使裝載鎖定裝置6及7中之容器31內抽真空，開放 第1閘閥G1，將晶圓W搬入至其容器31內，如第3圖所 示般，在使晶圓支撐銷50突出之狀態下於晶圓支撐銷50 -16- 200941622 上接取晶圓w，關閉第1閘閥G1。然後’ 一面使冷卻媒 體流通於冷卻板32之冷卻媒體流路55’ 一面使晶圓支撐 銷50下降，將晶圓W載置或接近於冷卻板32’以特定流 量將沖洗氣體導入至容器31內’而一面使其中之壓力上 升速度保持一定，一面使成爲大氣壓。 此時，在真空處理單元1〜4執行成膜處理等之高溫 處理之關係上，被搬入至容器31之時點的晶圓W之溫度 φ 爲例如500 °C以上之高溫。因此’當晶圓W之冷卻速度過 大時，藉由冷卻過程中之晶圓表背面之熱膨脹差，使得晶 圓如第4圖A、第4圖B般變形。 再者，首先依照標準之沖洗處理程式，以特定流量將 沖洗氣體導入至容器31內，並且使晶圓支撐銷下降’並 冷卻支撐銷，此時藉由兩個移位感測器6 1、62測量晶圓 W之移位，把握在晶圓W產生特定倍以上之微小變形之 時點，以緩和冷卻之方式執行控制。具體而言，比較以移 Ο 位感測器6 1所測量之至晶圓的距離，和以移位感測器62 所測量之至晶圓的距離，在該些差成爲特定値以上之時點 ，執行緩和如此冷卻之控制。此時，晶圓 W之變形因在 晶圓W之下降中也產生，故使驅動機構53和移位感測器 6 1、62同步，必須使成爲可以把握從移位感測器6 1、62 至晶圓之距離的絕對値。 晶圓W之冷卻速度（降溫速度）由於腔室容器31內 之壓力越上升，或是晶圓W越接近冷卻板32越變大，故 若關閉開關閥46停止容器31內之壓力上升，或是使晶圓 -17- 200941622 支撐銷50上升或者晶圓支撐銷50之下降途中時，藉由停 止晶圓支撐銷50之下降等，則可以緩和晶圓W之冷卻（ 降低降溫速度）。然後，藉由執行該些控制緩和冷卻，依 此，可以解除晶圓W之微小變形。 再者，除上述之外，操作雖然有些許複雜，但是即使 執行抽真空使腔室容器31內之壓力下降，亦可以緩和冷 卻。 如上述般，緩和冷卻，藉由移位感測器61、62把握 © 微小變形小於特定値之時點，製程控制器20於關閉開關 閥46之時，打開開關閥46，或是於使晶圓支撐銷50上升 之時，藉由驅動機構53使晶圓W返回至原來之位置，或 是在晶圓支撐銷50之下降途中停止晶圓支撐銷50之下降 時，藉由再次開始晶圓W之下降，使晶圓W之冷卻速度 上升。並且，於打開開關閥46再次開始導入沖洗氣體之 時，沖洗氣體之流量及使爲以前的特定流量亦可，即使爲 與此不同之流量亦可。 Ο 然後，於晶圓W每次產生特定値以上之微小變形時 ，藉由執行該些操作，不會產生對晶圓 W之冷卻效率造 成影響之變形，可以一邊以實用性之速度冷卻晶圓W — 邊使容器31內成爲大氣環境。 如此一來，在實際操作中可以執行裝載鎖定裝置中之 冷卻操作之最適合化。之後，在真空處理單元，執行施有 與該對象晶圓相同處理之晶圓冷卻之時，可以根據所作成 之沖洗處理程式來執行。然後，藉由對每形成有不同膜種 -18- .200941622 之晶圓執行如此之操作，則可以作成對各種膜種之晶圓最 適合之沖洗處理程式。 再者，藉由移位感測器6 1、62，可以執行冷卻操作時 之氣體監視。 並且，就以冷卻晶圓時的變形防止技術而言，自以往 提案有實際測量晶圓之溫度，就以溫度測量技術而言，一 般細在處理容器之頂壁之上方設置放射溫度計爲一般，此 〇 時雖然頂壁需要使用能夠適合於放射溫度計之非常高價的 特殊玻璃，但是在本發明中不需要直接測量晶圓之溫度， 頂壁之材料若爲藉由雷射移位技等之移位感測器執行檢測 即可，硼矽酸玻璃等之便宜者即可。 並且，本發明並限定於上述實施型態，當然可作各種 之變形。例如，在上述實施型態中，雖然舉出真空處理單 元設爲4個，將裝載鎖定裝置設爲2個的多腔室型之真空 處理系統之例予以說明，但是該些數量並步限定於此。再 Φ 者，本發明之裝載鎖定裝置並不限定於如此之多腔室型之 真空處理裝置，即使係真空處理單元爲1個的系統亦可以 適用。並且，在上述實施型態中，雖然使用兩個移位感測 器把握晶圓之變形，但是並不限定於此，即使使用CCD 照相機等之其他手段把握晶圓之變形亦可。再者，於檢測 出特定値以上之基板變形時，雖然自移位感測器之輸出之 差檢測出此，即使變更此以移位感測器之輸出之比來檢測 此亦可。再者，作爲緩和冷卻之手段，亦可以適用除上述 實施型態所示之手段以外的手段。又，針對被處理體，也 -19- 200941622 不限定於半導體晶圓’亦可以以FPD用玻璃基板等之其他 基板爲對象。 【圖式簡單說明】 第1圖爲模式性表示搭載本發明之一實施型態所涉及 之裝載鎖定裝置之多腔室型之真空處理系統之俯視圖。 第2圖爲表示本發明之一實施型態所涉及之裝載鎖定 裝置之剖面圖。 @ 第3圖爲表示第2圖之裝載鎖定裝置中’晶圓支撐銷 接取晶圓之狀態的模式圖。 第4圖A爲用以說明晶圓之變形之一態樣的模式圖。 第4圖B爲用以說明晶圓之變形之一態樣的模式圖。 【主要元件符號說明】 1 :真空處理單元 2 :真空處理單元 〇 3 :真空處理單元 4 :真空處理單元 5 :搬運室 6 :裝載鎖定室 7 :裝載鎖定室 8 :搬入搬出室 9 : 晶舟 1 〇 :晶舟 -20- .200941622 1 1 :晶舟 1 2 :搬運裝置 1 3 :旋轉伸縮部 14a :支撐臂 14b :支撐臂 1 5 :對準腔室 16 :搬運裝置 φ 1 7 :把手 1 8 :軌道 20 :製程控制器 21 :使用者介面 22 :記億部 3 1 :容器 3 1 a :頂壁 3 2 :冷卻板 G 33 :腳部 34 :開口 35 :開口 3 6 :排氣口 37 :氣體導入口 4 1 :排氣管 42 :開關閥 43 :排氣速度調整閥 44 :真空泵 -21 200941622 45 :沖洗導入配管 46 :開關閥 47 :流量調節閥 48 :沖洗氣體源 49 :壓力調整機構 5 0 :晶圓支撐銷 5 1 :支撐板 52 :桿體 5 3 :驅動機構 5 4 :波紋管 5 5 :冷卻媒體流路 56 :冷卻媒體導入配管 57 :冷卻媒體排出配管 6 1 :移位感測器 62 :移位感測器 6 3 :壓力計 G1 :第1閘閥 G2 :第2閘閥 F :前開式晶圓盒 -22-After the opening of the second gate valve G2 in the atmosphere environment, the wafer W is loaded, and then the vacuum is evacuated to the pressure corresponding to the transfer chamber 5 to open the first gate valve and the container 12 is transported from the container. 31. The wafer W is opened to open the gate valve of any vacuum processing unit. The wafer W is carried into the vacuum processing in which the wafer W is subjected to high temperature such as film formation. © When the vacuum processing is completed, the gate valve G is opened, the wafer W is carried out from the vacuum processing unit corresponding to the transfer device 12, and any of the first gate valves G1 of the load lock devices 6 and 7 is opened, and the wafer w is carried into the container. In the case of the cooling medium flowing through the cooling medium flow path 55 of the cooling plate 32, the flushing gas is introduced into the container 31, and the inside is set to atmospheric pressure (wafer cooling period). Then, the second gate valve is opened, and the processed wafer W is stored in the front opening wafer cassette F by the transport device 16. ❹ And, for the two load lock devices 6, 7, even if the load lock device 6 is dedicated for carry-in, the device lock device 7 may be used exclusively for carry-out. As described above, the operation of the wafer cooling period after the vacuum processing of the wafer W is completed and the wafer w is carried out from the corresponding vacuum processing unit by the transport device 12 will be described in detail. The inside of the container 31 in the load lock devices 6 and 7 is evacuated, the first gate valve G1 is opened, and the wafer W is carried into the container 31. As shown in Fig. 3, the wafer support pin 50 is protruded. The wafer w is taken up on the wafer support pins 50 -16 - 200941622, and the first gate valve G1 is closed. Then, while the cooling medium flows through the cooling medium flow path 55' of the cooling plate 32, the wafer support pin 50 is lowered, and the wafer W is placed or brought close to the cooling plate 32' to introduce the flushing gas into the container 31 at a specific flow rate. While inside, the pressure rise rate is kept constant while it becomes atmospheric pressure. At this time, in the relationship between the vacuum processing units 1 to 4 performing the high-temperature treatment such as the film forming process, the temperature φ of the wafer W at the time of being carried into the container 31 is, for example, a high temperature of 500 ° C or higher. Therefore, when the cooling rate of the wafer W is excessively large, the crystal circle is deformed as shown in Fig. 4A and Fig. 4B by the difference in thermal expansion of the back surface of the wafer during the cooling process. Furthermore, the flushing gas is first introduced into the container 31 at a specific flow rate according to a standard flushing process, and the wafer support pin is lowered and the support pin is cooled. At this time, by the two shift sensors 61, 62 measures the displacement of the wafer W, and grasps the timing at which the wafer W is slightly deformed by a certain time or more, and performs control in a manner of mitigating cooling. Specifically, the distance to the wafer measured by the shift position sensor 61 and the distance to the wafer measured by the shift sensor 62 are compared, when the differences become more than a certain threshold , performs control that mitigates such cooling. At this time, since the deformation of the wafer W is also generated during the fall of the wafer W, the drive mechanism 53 and the shift sensors 61 and 62 are synchronized, and it is necessary to make it possible to grasp the shift sensor 6 1 . 62 The absolute distance to the distance from the wafer. The cooling rate (cooling rate) of the wafer W increases as the pressure in the chamber container 31 rises, or the wafer W becomes larger as it approaches the cooling plate 32. Therefore, if the opening and closing valve 46 is closed, the pressure in the container 31 is stopped, or When the support pin 50 of the wafer -17-200941622 is raised or the wafer support pin 50 is lowered, the cooling of the wafer W (reduction of the temperature drop rate) can be alleviated by stopping the lowering of the wafer support pin 50 or the like. Then, by performing the control relaxation cooling, the minute deformation of the wafer W can be released. Further, in addition to the above, although the operation is somewhat complicated, even if the vacuum is applied to lower the pressure in the chamber container 31, the cooling can be alleviated. As described above, the cooling is cooled, and when the displacement sensor 61, 62 grasps that the minute deformation is smaller than the specific 値, the process controller 20 opens the switching valve 46 when the switching valve 46 is closed, or makes the wafer When the support pin 50 is raised, the wafer W is returned to the original position by the drive mechanism 53, or the wafer support pin 50 is stopped during the lowering of the wafer support pin 50, and the wafer W is restarted. The decrease causes the cooling rate of the wafer W to increase. Further, when the flushing gas is started to be introduced again when the opening and closing valve 46 is opened, the flow rate of the flushing gas and the previous specific flow rate may be set, even if the flow rate is different. Ο Then, when the wafer W is generated with a slight deformation of a specific thickness or more, each of the operations does not cause deformation that affects the cooling efficiency of the wafer W, and the wafer can be cooled at a practical speed. W — Makes the inside of the container 31 an atmospheric environment. As a result, the optimum cooling operation in the load lock device can be performed in actual operation. Thereafter, when the vacuum processing unit performs wafer cooling to which the same processing as the target wafer is applied, it can be executed in accordance with the processing procedure to be performed. Then, by performing such operations on each wafer having a different film type -18-.200941622, it is possible to prepare a rinsing process suitable for wafers of various film types. Further, by shifting the sensors 61, 62, gas monitoring at the time of the cooling operation can be performed. Further, in the case of the technique for preventing deformation when cooling a wafer, since the temperature of the wafer is actually measured in the past, it is generally preferable to provide a radiation thermometer above the top wall of the processing container in terms of temperature measurement technology. In this case, although the top wall needs to use a special glass which is very expensive to be suitable for the radiation thermometer, in the present invention, it is not necessary to directly measure the temperature of the wafer, and if the material of the top wall is moved by the laser shifting technique or the like. The position sensor can perform the test, and the barium silicate glass can be used as a cheaper one. Further, the present invention is not limited to the above-described embodiments, and various modifications can of course be made. For example, in the above-described embodiment, a vacuum processing unit is provided in four, and a multi-chamber vacuum processing system in which the load lock device is provided is described as an example. However, the number of steps is limited to this. Further, the load lock device of the present invention is not limited to such a multi-chamber type vacuum processing device, and is applicable even to a system in which the vacuum processing unit is one. Further, in the above embodiment, the deformation of the wafer is grasped by using two shift sensors. However, the present invention is not limited thereto, and the deformation of the wafer may be grasped by other means such as a CCD camera. Further, when the deformation of the substrate of a certain level or more is detected, although the difference in output from the displacement sensor is detected, even if the ratio of the output of the shift sensor is changed, the detection may be performed. Further, as means for alleviating the cooling, means other than the means shown in the above embodiment may be applied. Further, the object to be processed is not limited to the semiconductor wafer -19-200941622, and may be applied to other substrates such as a glass substrate for FPD. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view schematically showing a multi-chamber vacuum processing system equipped with a load lock device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a load lock device according to an embodiment of the present invention. @ Fig. 3 is a schematic view showing a state in which the wafer support pin picks up the wafer in the load lock device of Fig. 2. Fig. 4A is a schematic view for explaining one aspect of deformation of a wafer. Fig. 4B is a schematic view for explaining one aspect of deformation of the wafer. [Description of main component symbols] 1 : Vacuum processing unit 2 : Vacuum processing unit 〇 3 : Vacuum processing unit 4 : Vacuum processing unit 5 : Transfer chamber 6 : Load lock chamber 7 : Load lock chamber 8 : Loading and unloading chamber 9 : Crystal boat 1 〇: 舟舟-20- .200941622 1 1 : Crystal boat 1 2 : handling device 1 3 : rotary expansion and contraction portion 14a : support arm 14b : support arm 1 5 : alignment chamber 16 : handling device φ 1 7 : handle 1 8 : Track 20 : Process controller 21 : User interface 22 : Billion 3 3 : Container 3 1 a : Top wall 3 2 : Cooling plate G 33 : Foot 34 : Opening 35 : Opening 3 6 : Exhaust Port 37: gas introduction port 4 1 : exhaust pipe 42 : switching valve 43 : exhaust speed adjusting valve 44 : vacuum pump-21 200941622 45 : flushing introduction pipe 46 : switching valve 47 : flow regulating valve 48 : flushing gas source 49 : Pressure adjustment mechanism 50: wafer support pin 5 1 : support plate 52 : rod 5 3 : drive mechanism 5 4 : bellows 5 5 : cooling medium flow path 56 : cooling medium introduction pipe 57 : cooling medium discharge pipe 6 1 : Shift sensor 62: Shift sensor 6 3 : Pressure gauge G1: 1st gate valve G2: 2nd gate valve F: Front open cassette box-22-