200926906 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種片狀電漿成膜裝置之構造。 【先前技術】 電漿成膜裝置，係利用電漿槍所產生之電漿，使基板 成膜之裝置。其中，以藉由電漿將成膜材料（靶）加以濺鍍， 以使基板成膜之磁控濺鍍裝置或片狀電漿成臈裝置較為所 知。 然而，在使用濺鍍裝置以使具有槽或孔之基板成膜等 情形，會有容易在形成槽或孔之内面形成外伸等問題。 針對該問題’已知有一種將線圈設置於從靶到達至基 板之路徑周圍的磁控濺鍍裝置（例如，參照專利文獻丨^^專 利文獻1所揭示之濺鍍裝置，係可使直流電流流經該線圈， 藉此提高連結靶與基板之磁通密度。藉此，可增大被濺鍍 而從靶飛出之粒子（以下，稱為濺鍍粒子）對基板的入射角， »而可抑制在形成槽或孔之内面形成外伸(。verhang)。 專利文獻1 :日本特開平10_ 152774號公報 【發明内容】 此種外伸在片狀電敷成膜裝置亦會產生。然而，欲將 專利文獻1所揭示之軸裝置之線圈，應用於習知片狀電 I成膜裝置時’因線圈所形成之磁場會導致片狀電浆蠻 曲而使片狀電激與基板或與乾之距離不均句。因此，難 200926906 以在基板形成均勻之膜。 本發明係為解沐μ _5+ eas 、述問題而構成者，目的在於提供一 種片狀電漿成臈裝置，可水 τ抑制在形成基板主面所設置之槽 或孔的内面形成外伸。 為解決前述問題，本發明之片狀電漿成膜裝置，具備： :=容：：可使其内部減壓；電聚搶，用以使電浆產生在 |4之内部；陽極，在該減堡容器之内部接受該電 ❹聚；片狀電浆變形機構，用以使流經陰極與該陽極間之該 電漿變形成月狀’·成膜室，係構成該減麗容器之一部分且 供該片狀之電梁（以下，稱為片狀電漿）通過；乾及基板’設 置成於該成膜室之内部隔著該片狀電漿相對向；第1磁場 產生器，係於該成膜室之該片狀電激與該基板之間所形成 之空間（以下，稱為基板空間），產生磁力線之方向為從該基 板朝向該片狀電漿的磁場；以及第2磁場產生器Υ係於S 基板空間之該第i磁場產生器之磁場產生區域與該基板間 ❹之區域，產生磁力線之方向為從該片狀電漿朝向該基板的 磁場。 藉此，可增大滅鑛粒子對基板的入射角，而可抑制在 形成槽或孔之内面形成外伸。又’能以良好底部覆蓋率成 膜在形成槽或孔之内面。此外，由於亦可抑制片狀電漿彎 曲，因此可於基板均勻成膜。 7 又’本發明之片狀電聚成膜裝置中’較佳為該第1磁 場產生器所產生之磁場的強度小於該第2磁 艰~產生器所產 生之磁場的強度β 200926906 又，本發明之片狀電漿成膜裝置中，進一步具備第3 磁场產生’以於該成膜宮夕兮y业發耽 取犋至之該片狀電漿與該靶之間所形 成之空間，產生磁力線之方命我％封·& + , u , 冰<万向為從該靶朝向該片狀電漿的 磁場。 本發明之上述目的、其他目的、特徵、及優點，在參 '照附加圖式下，從以下較佳實施形態之詳細說明即可清楚 了解。 根據本發明之片狀電漿成膜裝置’可抑制在形成槽或 ^孔之内面形成外伸。 【實施方式】 以下’參照圖式說明本發明之較佳實施形態。此外， 在所有圖式中’對相同或相當部分賦予相同符號，並省略 重複之說明。 (實施形態1) [電漿成膜裝置之構成] 圖1係表示本發明之實施形態1之電製成膜裝置之概 略構成的示意圖。此外，本實施形態中，為了方便起見， 如圖1所示，係以三維正交座標系之X轴、γ轴及Z轴之 方向來表示成膜裝置之構造之方向。 如圖1所示，本實施形態1之電漿成膜裝置100，具有 電聚搶1、片狀電漿變形室2、成膜室3、及陽極室4,且 此等係形成彼此氣密連通。此外’係由片狀電裝變形室2、 成膜室3、及陽極室4構成減壓容器。 200926906 電漿搶1，此處係以將公知之壓力梯度型電漿搶 陰極型電漿槍$ *去興被〇 、聚糖之兩者加以組合而成的雙型電聚搶所構成， 具有以Z軸方向之轴為中心之圓筒狀的第1筒構件U。利 用第1同構件1 1之内部空間形成放電空間1 7。 於第1筒構件11之_狀端部，設有蓋構件12以封 閉該第1筒構件11之内部空間’於該蓋構件12則設有陰 極13。陰極13係透過電阻體R1與由直流電源構成之主電 源14之負極形成電氣連接。 又，於第1筒構件u之途中，連接有環狀中間電極15, 16。中間電極15, 16，係透過適當之電阻體以，R3分別與 主電源14形成電氣連接，並藉由主電源14施加既定正電 壓於_間電極15,16。藉此，維持陰極13所產生之電弧放 電，於電漿搶！之放電^間17形成荷電粒子（此處為Ar+與 電子)之集合體的電聚’以圓柱狀電漿(以下，稱為圓柱電 漿）CP拉往片狀電漿變形室2側。 此外，第丄筒構件η之另-側之端部，係與片狀電漿 變形室2氣密連通。利用片狀電漿變形室2之内部空間， 形成輸送空間1 8。 以隔著輸送空間18並使 式’將一對方形永久磁鐵 於接近永久磁鐵19a，19b 於片狀電漿變形室2之周圍， 彼此同極（此處為Ν極）相對向之方 19a，19b設置成沿X軸方向延伸。 之陰極13之侧’以圍繞片狀電漿變形室2之周面的方式， 設有環狀成形電磁線圈（空心線圈心此外，係由永久磁鐵 19a，19b與成形電磁線圈20構成片狀電毅變形機構。又， 9 200926906 於成形電磁線圈20係被通電以陰極13側為s極、以陽極 42側為N極之方向的電流。200926906 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a configuration of a sheet-like plasma film forming apparatus. [Prior Art] A plasma film forming apparatus is a device which forms a film by using a plasma generated by a plasma gun. Among them, a magnetron sputtering apparatus or a sheet-like plasma forming apparatus in which a film forming material (target) is sputtered by plasma to form a substrate is known. However, in the case where a sputtering apparatus is used to form a substrate having a groove or a hole, there is a problem that it is easy to form an overhang on the inner surface of the groove or the hole. In response to this problem, a magnetron sputtering device in which a coil is disposed around a path from a target to a substrate is known (for example, a sputtering device disclosed in Patent Document 1 can be used to generate a direct current. By flowing through the coil, the magnetic flux density of the connection target and the substrate is increased, thereby increasing the incident angle of particles (hereinafter referred to as sputtered particles) that are sputtered from the target to the substrate by sputtering. It is possible to prevent the formation of a groove on the inner surface of the groove or the hole. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 10-152774. SUMMARY OF THE INVENTION This type of overhanging is also produced in a sheet-like electric film forming apparatus. When applying the coil of the shaft device disclosed in Patent Document 1 to a conventional sheet-shaped electric I film forming apparatus, the magnetic field formed by the coil causes the sheet-like plasma to be squeaky and causes the sheet-like electric excitation and the substrate or The dry distance is not uniform. Therefore, it is difficult to form a uniform film on the substrate in 200926906. The present invention is a method for solving the problem of μ _5+ eas, and the object is to provide a sheet-like plasma forming device, which can be water τ Suppressing the formation of the main surface of the substrate The inner surface of the groove or the hole is formed to be overhanged. In order to solve the above problems, the sheet-shaped plasma film forming device of the present invention has: := capacity:: can be internally decompressed; Produced inside the |4; the anode receives the electro-convergence inside the detonation vessel; a sheet-like plasma deformation mechanism for deforming the plasma flowing between the cathode and the anode into a moon-shaped The membrane chamber is formed as a part of the reduced container and passes through the sheet-shaped electric beam (hereinafter referred to as a sheet-like plasma); the dry and the substrate 'are disposed in the interior of the film forming chamber through the sheet-shaped electricity The first magnetic field generator is a space formed between the sheet-like electric excitation of the film forming chamber and the substrate (hereinafter referred to as a substrate space), and the direction of the magnetic field lines is from the substrate toward the substrate a magnetic field of the sheet-like plasma; and a second magnetic field generator is coupled to the region between the magnetic field generating region of the ith magnetic field generator and the substrate in the S substrate space, and the direction of the magnetic field line is oriented from the sheet-like plasma The magnetic field of the substrate. Thereby, the particles of the ore-killing particles can be increased The angle of incidence can suppress the formation of the overhang on the inner surface of the groove or the hole. The film can be formed on the inner surface of the groove or the hole with good bottom coverage. Moreover, since the sheet-like plasma can also be suppressed, it can be The substrate is uniformly formed into a film. 7 In the sheet-shaped electropolymerization film forming apparatus of the present invention, it is preferable that the intensity of the magnetic field generated by the first magnetic field generator is smaller than the intensity of the magnetic field generated by the second magnetic generator. [beta] 200926906 Further, in the sheet-shaped plasma film forming apparatus of the present invention, the third magnetic field generation is further provided between the sheet-like plasma and the target which are formed by the film formation. The space formed, the magnetic field line is generated, and the magnetic field is the magnetic field from the target toward the sheet-like plasma. The above objects, other objects, features, and advantages of the present invention. The detailed description of the preferred embodiments below will be apparent from the accompanying drawings. The sheet-like plasma film forming apparatus according to the present invention can suppress the formation of an overhang on the inner surface of the groove or the hole. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are designated by the same reference numerals, and the description of the repeated description is omitted. (Embodiment 1) [Configuration of Plasma Film Forming Apparatus] Fig. 1 is a schematic view showing a schematic configuration of an electrode forming apparatus according to Embodiment 1 of the present invention. Further, in the present embodiment, for the sake of convenience, as shown in Fig. 1, the direction of the structure of the film forming apparatus is indicated by the directions of the X-axis, the γ-axis, and the Z-axis of the three-dimensional orthogonal coordinate system. As shown in Fig. 1, the plasma film forming apparatus 100 of the first embodiment has an electric gathering, a sheet-like plasma deformation chamber 2, a film forming chamber 3, and an anode chamber 4, and these are formed to be airtight to each other. Connected. Further, the sheet-shaped electrical dressing deformation chamber 2, the film forming chamber 3, and the anode chamber 4 constitute a pressure reducing container. 200926906 The electric plasma grabs 1, which is composed of a well-known pressure gradient type plasma grab-type plasma gun, which is a combination of two types of electric poly-collection. A cylindrical first tubular member U centered on the axis in the Z-axis direction. The discharge space 17 is formed by the internal space of the first member I1. At the end portion of the first tubular member 11, a cover member 12 is provided to close the internal space of the first tubular member 11, and the cover member 12 is provided with a cathode 13. The cathode 13 is electrically connected to the negative electrode of the main power source 14 composed of a DC power source through the resistor R1. Further, in the middle of the first tubular member u, the annular intermediate electrodes 15, 16 are connected. The intermediate electrodes 15, 16 are passed through appropriate resistors, R3 are electrically connected to the main power source 14, respectively, and a predetermined positive voltage is applied to the inter-electrodes 15, 16 by the main power source 14. Thereby, the arc generated by the cathode 13 is maintained to be discharged, and the plasma is grabbed! The electric charge ' formed by the discharge 17 between the charged particles (here, Ar + and electrons) is pulled toward the sheet-like plasma deformation chamber 2 side by a cylindrical plasma (hereinafter referred to as a cylindrical plasma) CP. Further, the other end portion of the second cylindrical member η is in airtight communication with the sheet-like plasma deformation chamber 2. The conveying space 18 is formed by the internal space of the sheet-like plasma deformation chamber 2. The pair of square permanent magnets are placed adjacent to the permanent magnets 19a, 19b around the sheet-like plasma deformation chamber 2 via the transport space 18, and are opposite to each other (here, the drain) 19a, 19b is arranged to extend in the X-axis direction. The side of the cathode 13 is provided with an annular shaped electromagnetic coil so as to surround the circumferential surface of the sheet-like plasma deformation chamber 2 (the hollow coil core is further composed of permanent magnets 19a, 19b and the formed electromagnetic coil 20 to form a sheet-shaped electric Further, 9 200926906 The current in the forming electromagnetic coil 20 is energized such that the cathode 13 side is the s pole and the anode 42 side is the N pole.
〇 此外，於片狀電漿變形室2之輸送空間18，藉由使電 流流經成形電磁線圈20，形成線圈磁場，並藉由該線圈磁 場與永久磁鐵19a，19b所成形之磁鐵磁場的相互作用，使 圓柱電製CP於Z軸方向上移動於片狀電漿變形室2之輸送 二間1 8。於此期間，圓柱電漿cp係變形為沿χζ平面擴展 且均勻之片狀之電衆（以下，稱為片狀電E)sp。以此方式變 形之片狀電漿SP流入成膜室3。 成膜至3係形成為以γ轴方向之轴為中心的筒狀（此處 為圓=狀利用成膜室3之内部空間形成成膜空間21。又， 成膜至3之一側之端部（陰極丨3側端部）係透過第1瓶頸部 …連通片狀電激變形室2之輸送空間_成膜室3之成 膜空間21 ’且與片狀電槳變形室2氣密連接。 於成膜室3之内部’以隔著片狀電漿sp與大致為平板 土板24相對向之方式，設有大致為平板狀之靶a作 為成媒材料°基板24係保持於基板保持具25，該基板保持 具乃藉由適當手段氣密設於成膜室3。又，基板保持具25 係藉由第1驅動機構26構成為可移動於Y轴方向，並藉由 適當配線與偏壓電源27之貞極形成電氣料。㈣電源藉^ ^將，，於片狀電漿sp為負之偏壓電壓施加於基板保持具 。此二’基板保持具25與成膜室3係藉由適當手段絕緣: 週田〜进設於成膜室3。又，靶保持具28係藉 200926906 由第2驅動機槿& 機構29構成為可移動於γ軸方向 配線與偏壓電源3Q之負極形成電氣連接1藉由^當 將相對於片狀電聚SP為負之偏壓電壓施加於 此外’靶保持具28與成膜室3係藉由適當手段：28。Further, in the transport space 18 of the sheet-like plasma deformation chamber 2, a coil magnetic field is formed by flowing a current through the shaping electromagnetic coil 20, and the magnetic field of the magnet formed by the coil magnetic field and the permanent magnets 19a, 19b is mutually The action is such that the cylindrical electric CP moves in the Z-axis direction to the transporting chambers 1 of the sheet-like plasma deformation chamber 2. During this period, the cylindrical plasma cp is deformed into a sheet-like electric power (hereinafter, referred to as a sheet-shaped electric E) sp which is spread along the pupil plane. The sheet-like plasma SP deformed in this manner flows into the film forming chamber 3. The film formation to the 3rd line is formed in a cylindrical shape centering on the axis in the γ-axis direction (here, the circle=shape forms the film formation space 21 by the internal space of the film formation chamber 3. Further, the film is formed to the end of one side of the 3 side. The portion (the cathode 丨3 side end portion) communicates with the sheet forming space 21 ′ of the film forming chamber 3 through the first neck portion ... and the film forming space 21 ′ of the film forming chamber 3 and is hermetically connected to the sheet-shaped electric pad deformation chamber 2 The inside of the film forming chamber 3 is provided with a substantially flat-shaped target a as a forming material so as to face the substantially flat soil plate 24 with the sheet-like plasma sp interposed therebetween. The substrate 24 is held on the substrate. The substrate holder is airtightly disposed in the film forming chamber 3 by a suitable means. Further, the substrate holder 25 is configured to be movable in the Y-axis direction by the first driving mechanism 26, and is appropriately wired and The drain of the bias power source 27 forms an electrical material. (4) The power source is applied to the substrate holder by a negative bias voltage of the chip plasma sp. The two 'substrate holder 25 and the film forming chamber 3 Insulation by appropriate means: Zhou Tian ~ enters the film forming chamber 3. In addition, the target holder 28 is borrowed from 200926906 by the second drive 槿 & 29 is configured to be electrically connectable to the negative electrode of the bias power supply 3Q in the γ-axis direction wiring 1 by applying a bias voltage which is negative with respect to the sheet-like electropolymer SP to the other 'target holder 28 and film formation Room 3 is by appropriate means: 28.
此外’成膜室3之内部空間中，靶23與片狀雷 之間的空間形絲空間38，基板24與片狀電锻 P 空間形成基板空間39。 乏間的 ❹ ;成膜至3之適當部位設有可藉由調整閥3丨開 之排氣口 32。於排氣口 32係透過適#之配管連接有真 (未圖不）。藉由該真空果抽成真空，成膜t 3之成膜空間 21便迅速減壓至可進行濺鍍製程之程度的真空度。此外， 調整閥31係以藉由去固_ 稭由未圖不之控制裝置調整其開度的方 構成。 叮 於成膜至3之外部，係將可控制磁力強度之第1電磁 線圈33及第2電磁線圈34，彼此成對設置於成膜室3之兩 側。第1電磁線U 33與第2電磁線圈34，係以使彼此不同 之極（此處’第1電磁線圈33為N極、第2電磁線圈34為 s極)相對向’且各中心轴設置成沿z軸。 藉由使電流流經該第1電磁線圈33及第2電磁線圈34 所形成之線圈磁場（例如1〇G〜3〇〇G左右），係作為鏡磁場 將片狀電漿SP之形狀加以整形，以適當抑制於z軸方向上 移動於成膜至3之成膜空間21之片狀電漿SP往寬度方向 擴散。 又’於成膜室3之外部，第1電漿形狀修正線圈（第3 200926906 磁場產生器）35與第2電衆形狀修正線圈（第丨磁場產生 器）36,係以隔著片狀電漿sp相對向並分別捲繞成膜室3 之周面’且各中心軸為沿γ轴之方式設置。再者，於成膜 室3之外部，缝粒子調整線圈（第2磁場產生昨7,係以 捲繞成膜室3之周面，且其中心軸為沿γ轴之方式設置於 第2電襞形狀修正線圈36之下方。換言之第1電聚形狀 修正線圈35係設置成圍繞靶空間38，第2電漿形狀修正線 Q圈36及靶粒子調整線圈37係設置成圍繞基板空間39。 此外，第1電漿形狀修正線圈35係以形成磁力線之方 向為從靶23朝向片狀電漿sp(磁力線為垂直方向向下）之線 圈磁場的方式通電，第2電漿形狀修正線圈36係以形成磁 力線之方向為從基板24朝向片狀電漿SP(磁力線為垂直方 向向上）之線圈磁場的方式通電。又，濺鍍粒子調整線圈37 係以形成磁力線之方向為從片狀電漿SP朝向基板24 (磁力 線為垂直方向向下）之線圈磁場的方式通電。此外，係以第 φ 2電聚形狀修正線圈36所產生之磁場之強度小於濺鍍粒子 调整線圈37所產生之磁場之強度的方式’構成第2電漿形 狀修正線圈36及藏鍍粒子調整線圈37。 此外’本實施形態中，雖設置第1電漿形狀修正線圈 35作為第3磁場產生器’但並不限於此，不設置第1電漿 形狀修正線圈35之構成亦可。又，雖將第1及第2電漿形 狀修正線圈35，36與濺鍍粒子調整線圈37設置於成膜室3 之外部，但並不限於此’亦可設置於成膜室3之内部。再 者’雖將濺鍍粒子調整線圈37分離設置於第2電漿形狀修 12 200926906 正線圈36之下方，但並不限於此，亦可設置成使濺鍍粒子 調整線圈37與第2電漿形狀修正線圈36接觸。 藉此’藉由濺鍍粒子調整線圈37所產生之磁場，經離 子化之濺鑛粒子對基板24的入射角變大。換言之，經離子 化之減鑛粒子係沿基板24之大致法線方向（相對於XZ平面Further, in the internal space of the film forming chamber 3, the space-shaped wire space 38 between the target 23 and the sheet-like lightning, the substrate 24 and the sheet-shaped electrically forged P space form the substrate space 39. The sputum of the suffocating zone; the appropriate portion of the film forming to 3 is provided with an exhaust port 32 which can be opened by the regulating valve 3. The exhaust port 32 is connected to the pipe through the appropriate # (not shown). By vacuuming the vacuum, the film forming space 21 of the film t 3 is rapidly depressurized to a degree that the sputtering process can be performed. Further, the regulating valve 31 is constructed by adjusting the opening degree of the unfixed control device by means of the unscrewing. The first electromagnetic coil 33 and the second electromagnetic coil 34, which are capable of controlling the magnetic strength, are disposed on the both sides of the film forming chamber 3 in pairs with each other outside the film formation. The first electromagnetic wire U 33 and the second electromagnetic coil 34 are different from each other (here, the first electromagnetic coil 33 is the N pole and the second electromagnetic coil 34 is the s pole), and the central axis is set. Into the z axis. The shape of the sheet-like plasma SP is shaped as a mirror magnetic field by causing a current to flow through the coil magnetic field (for example, about 1 〇 G to 3 〇〇 G) formed by the first electromagnetic coil 33 and the second electromagnetic coil 34. The sheet-like plasma SP that is appropriately prevented from moving in the film formation space 21 formed in the z-axis direction by the film in the z-axis direction is diffused in the width direction. Further, outside the film forming chamber 3, the first plasma shape correcting coil (3th 200926906 magnetic field generator) 35 and the second electric shape correcting coil (the second magnetic field generator) 36 are electrically connected to each other. The slurry sp is wound and wound around the peripheral surface of the film forming chamber 3, respectively, and each central axis is disposed along the γ axis. Further, outside the film forming chamber 3, a slit particle adjusting coil is formed (the second magnetic field is generated on the peripheral surface of the film forming chamber 3, and the central axis thereof is set to the second electric field along the γ axis. The lower side of the shape correction coil 36. In other words, the first electro-convex shape correction coil 35 is disposed to surround the target space 38, and the second plasma shape correction line Q-ring 36 and the target particle adjustment coil 37 are disposed to surround the substrate space 39. The first plasma shape correction coil 35 is energized such that the direction in which the magnetic lines of force are formed is the coil magnetic field from the target 23 toward the sheet-like plasma sp (the magnetic field lines are vertically downward), and the second plasma shape correction coil 36 is The direction in which the magnetic lines of force are formed is energized from the substrate 24 toward the coil magnetic field of the sheet-like plasma SP (the magnetic lines of force are vertically upward). Further, the sputtering particle adjusting coil 37 is oriented from the sheet-like plasma SP so as to form magnetic lines of force. The coil magnetic field of the substrate 24 (the magnetic field lines are vertically downward) is energized. Further, the strength of the magnetic field generated by the φ 2 electropolymer shape correcting coil 36 is smaller than the magnetic field generated by the sputter particle adjusting coil 37. In the present embodiment, the first plasma shape correction coil 36 and the deposition catalyst adjustment coil 37 are formed. In the present embodiment, the first plasma shape correction coil 35 is provided as the third magnetic field generator, but the present invention is not limited thereto. The configuration of the first plasma shape correction coil 35 may not be provided. Further, the first and second plasma shape correction coils 35 and 36 and the sputter particle adjustment coil 37 are provided outside the film formation chamber 3, but The present invention is not limited to this and may be disposed inside the film forming chamber 3. Further, although the sputter particle adjusting coil 37 is separately disposed under the second plasma shape repair 12 200926906 positive coil 36, it is not limited thereto. The sputter particle adjusting coil 37 may be disposed in contact with the second plasma shape correcting coil 36. By this, the incident angle of the ionized sputter particles to the substrate 24 is adjusted by the magnetic field generated by the sputter particle adjusting coil 37. In larger, in other words, the ionized ore-reducing particles are along the substantially normal direction of the substrate 24 (relative to the XZ plane)
大致垂直）飛行。因此，在基板24之濺鍍粒子所要堆積的表 面即使开> 成有孔或槽’由於經離子化之滅鑛粒子會到達形 成孔或槽之底面’因此可抑制在形成槽或孔之内面形成外 伸，且能以良好底部覆蓋率成膜於形成槽或孔之内面。又， 藉由第1及第2電漿形狀修正線圈35，36所產生之磁場， 可抑制片狀電漿SP彎曲，而使基板24或靶23之主面與片 狀電漿sp的距離大致一定，而可使基板24均勻成膜。 此外，藉由上述第i及第2電磁線圈33, 34所形成之 線圈磁場，使片狀電漿SP流入陽極室4。Flying roughly vertically). Therefore, even if the surface to be deposited by the sputtered particles of the substrate 24 is opened, the hole or groove 'because the ionized ore-killing particles reach the bottom surface of the formed hole or groove', thereby suppressing the inner surface of the groove or the hole. The overhang is formed and can be formed into a groove or an inner surface of the hole with a good bottom coverage. Further, the magnetic field generated by the first and second plasma shape correcting coils 35, 36 can suppress the bending of the sheet-like plasma SP, and the distance between the main surface of the substrate 24 or the target 23 and the sheet-like plasma sp can be made substantially Certainly, the substrate 24 can be uniformly formed into a film. Further, the sheet-like plasma SP flows into the anode chamber 4 by the coil magnetic field formed by the first and second electromagnetic coils 33, 34.
、陽極至4之一側之端部（陰極13側端部），係藉由第2 =部4〇’使陽極室4之内部”與成膜室3之成膜空間 ，通，且與成膜室3氣密連接。又，於形成陽極室*之 側之端部之蓋構件41設有陽極421極42係藉由適 二線與主電源14之正極形成電氣連接。藉此，藉由主電 /陽極42、陰極13之間將適當之正電壓（例如，1〇〇V)施加於 氣之面：於接近盍構件41之陽極42之侧之面(與暴露於大 為N極目反側之面)’設置有以陽極42侧為8極、以大氣側 極之永久磁鐵43。藉此，藉由離開永久磁鐵43U 13 200926906 極而進入S極之、、儿τ 於寬度方向，以力線，使片狀電浆SP收傲 鈾^ 陽極42之片狀電褒⑼往寬度方 至陽極42。 而使片狀電漿sP之何電粒子適當回收 [電漿成膜裝置之動作] 其次，針對電漿成膜裝置100之動作，參照圖1作說 明。此外，以下諸動作係藉由未圖示之控制裝置控制。 ❹ Ο 膜6 將基板24餘23搬人電漿成膜裝置⑽之成 、至 。接者’藉由未圖示之真空泵之抽真空使電漿 成膜裝i 100之内部成為真空狀ϋ。 ’ 其人將氬氣供應於電漿搶丨之放電空間17内。 在與陰極13之間從主電源14將 、田义止電壓(例如，100V) 施加於陽極42,以在陰極13產生電 中 座生電漿。所產生之電滎藉由 中間電極15，16所產生之電場，從陰極13拉出至陽極Μ =而成形為圓柱狀，圓柱„cp被導引至片狀電激變形 至2 〇 被導引至片狀電漿變形室2之圓柱電浆cp，藉由從一 ^永久磁鐵19a’19b與成形電磁線圈2〇所產生之磁場，擴 展成片狀（沿X轴方向對稱擴展而延伸於χζ平面），而變形 成片狀電聚SP。該片狀電漿卯被導引至成膜室3。 被導入成膜室3之片狀電漿sp，藉由第11；磁線圈33、 第:電磁線圈34所產生之磁場，調整寬度方向之形狀並 :別：Μ與基板24之間的空間。於靶23與基板24 刀別從偏壓電源30,27施加相對於片狀電衆sp為負之偏壓 14 200926906 藉此，構成片狀電漿sp之氬離子以良好效率濺鍍乾 23。構成被濺鍍之靶23的原子（以下’稱為濺鍍粒子）便通 過片狀電漿SP中，在此期間濺鍵粒子被離子化為陽離子。 接著’經離子化之濺鍍粒子朝向偏壓成負之基板24，飛行 於基板空間39而使基板24成膜。 此時，藉由濺鍍粒子調整線圈37所產生之磁場，使經 離子化之濺鍍粒子對基板24的入射角變大。換言之，經離 子化之濺鍍粒子係沿基板24之大致法線方向（相對於χζ平 面大致垂直）飛行。因此’在基板24之濺鍍粒子所要堆積的 表面即使形成有孔或槽，由於經離子化之濺鍍粒子會到達 形成孔或槽之底面，因此可抑制在形成槽或孔之内面形成 外伸，且能以良好底部覆蓋率成膜於形成槽或孔之内面。 又，藉由第1及第2電漿形狀修正線圈35，36所產生之磁 場，可抑制片狀電漿sp彎曲，以使基板24或靶23之主面The end portion of the anode to the one side (the end portion on the cathode 13 side) is formed by the second = portion 4'', the inside of the anode chamber 4 and the film forming space of the film forming chamber 3, and The membrane chamber 3 is hermetically connected. Further, the lid member 41 at the end portion on the side where the anode chamber* is formed is provided with an anode 421 pole 42 electrically connected to the positive electrode of the main power source 14 by a suitable second wire. A suitable positive voltage (for example, 1 〇〇V) is applied between the main electric/anode 42 and the cathode 13 to the side of the gas: on the side close to the anode 42 of the crucible member 41 (with exposure to a large N-pole The side surface is provided with a permanent magnet 43 having an anode 42 side and an atmospheric side pole. By this, the permanent magnet 43U 13 200926906 is separated and enters the S pole and the width τ in the width direction. The force line causes the sheet-like plasma SP to receive the uranium ^ the sheet-shaped electrode (9) of the anode 42 to the width to the anode 42. What kind of electric particles of the sheet-like plasma sP are properly recovered [action of the plasma film forming device] Next, the operation of the plasma film forming apparatus 100 will be described with reference to Fig. 1. Further, the following operations are controlled by a control device (not shown). 6 The substrate 24 is transferred to the plasma film forming apparatus (10). The receiver's vacuum is opened by a vacuum pump (not shown) to make the inside of the plasma film forming apparatus i 100 into a vacuum. Argon gas is supplied to the discharge space 17 of the plasma rushing. A voltage (for example, 100 V) is applied from the main power source 14 to the anode 42 between the cathode 13 to generate electricity in the cathode 13. The plasma generated by the electric field generated by the intermediate electrodes 15, 16 is pulled out from the cathode 13 to the anode Μ = and formed into a cylindrical shape, and the cylinder „cp is guided to the sheet-like electrical excitation to 2 〇. The cylindrical plasma cp guided to the sheet-like plasma deformation chamber 2 is expanded into a sheet shape (symmetrically expanded in the X-axis direction) by a magnetic field generated from a permanent magnet 19a'19b and a shaped electromagnetic coil 2? Extending to the χζ plane), and forming a sheet-like electropolymer SP. The sheet-shaped plasma crucible is guided to the film forming chamber 3. The sheet-like plasma sp introduced into the film forming chamber 3 is adjusted in the width direction by the magnetic field generated by the magnetic coil 33 and the electromagnetic coil 34, and the space between the crucible and the substrate 24 is adjusted. The target 23 and the substrate 24 are biased from the bias power sources 30, 27 to be negative with respect to the sheet-like power source sp. 14 200926906 Thereby, the argon ions constituting the sheet-like plasma sp are sputtered dry 23 with good efficiency. The atoms constituting the target 23 to be sputtered (hereinafter referred to as "sputter particles") pass through the sheet-like plasma SP, during which the sputter-bonded particles are ionized into cations. Then, the ionized sputter particles are directed toward the substrate 24 which is biased to be negative, and fly on the substrate space 39 to form the substrate 24. At this time, the incident angle of the ionized sputtered particles on the substrate 24 is increased by the magnetic field generated by the sputter particle adjusting coil 37. In other words, the ionized sputtered particles fly in a generally normal direction of the substrate 24 (substantially perpendicular to the plane of the crucible). Therefore, even if a hole or a groove is formed on the surface on which the sputtered particles of the substrate 24 are to be deposited, since the ionized sputtered particles reach the bottom surface of the formed hole or the groove, it is possible to suppress the formation of the overhang on the inner surface of the groove or the hole. And can form a film on the inner surface of the groove or the hole with a good bottom coverage. Further, by the magnetic fields generated by the first and second plasma shape correcting coils 35, 36, it is possible to suppress the sheet-like plasma sp from being bent so that the main surface of the substrate 24 or the target 23
飛行。因此， 在基板24之 產生之磁場’使經離子化之濺鍍 大。換言之’經離子化之濺鍍粒 •方向（相對於χζ平面大致垂直） 淹銀粒子所要堆積的表面即使形 15 200926906 成有孔或槽，由於經離子化 乏依而 m^ 之濺鍍粒子會到達形成孔或槽 之底面，因此可抑制在形成 價 η P ^ ^ 僧戍孔之内面形成外伸，且能 乂良好底邛覆蓋率成膜於形成 « ^ ^ y 糟或孔之内面。又，藉由第1 及第2電漿形狀修正線圈35 ^ 1： ^ SP ^ Λ ，所產生之磁場，可抑制片 狀電漿sp彎曲，以使基板24flight. Therefore, the magnetic field generated at the substrate 24 causes ionization to be large. In other words, 'ionized sputtered particles ・direction (substantially perpendicular to the plane of the crucible). The surface to be deposited by the flooded silver particles will have holes or grooves even if it is shaped by ionization. When the bottom surface of the hole or the groove is formed, it is possible to suppress the formation of the overhang on the inner surface of the formation price η P ^ ^, and to form a film with a good bottom coverage to form the inner surface of the hole or the hole. Further, by the first and second plasma shape correcting coils 35 ^ 1: ^ SP ^ Λ , the generated magnetic field can suppress the bending of the sheet-like plasma sp to make the substrate 24
+ 飞靶23之主面與片狀電漿SP 的距離大致—疋，而可使基板24均勻成膜。 實施例 ❹ 其次，針對本發明之月狀電製成膜裝置之實施例作說 明。 [實施例1] 實施例1之片狀電衆成膜裝置，與實施形態i之片狀 電聚成膜裝置1GG之基本構成雖相同，但省略帛！電榮妒 狀修正線圈35,而構築僅設置有第2電漿形狀修正線圈％ 作為第1磁場產生器之片狀電漿成膜裝置1〇〇。以下，參照 圖2詳細說明。 … 〇 圖2係表表示實施例1所使用之片狀電漿成膜裝置100 之成膜室3之概略構成的示意立體圖。此外，圖2中， 省略了靶保持具28等》 ’、 如圖2所示，本實施例1之片狀電漿成膜裝置1〇〇,係 將第2電漿形狀修正線圈36與錢鍍粒子調整線圈37設置 於成膜室3之外部。具體而言’第2電漿形狀修正線圈=， 丨尔稽虫將 W掀况次於自 膜室3之上端部起50 mm至90mm的部分所形成。 粒子調整線圈37，係藉由將2mm之金屬線沿成 16 200926906 面捲繞300次於自成膜室3之上端部起11〇丽至她n的 部分所形成。 [比較例1 ] 比較例1之片狀電聚成膜裝置，係習知片狀電聚成膜 裝置，亦即在圖之片狀錢成膜裝置⑽，構築不設 第1及第2電漿形狀修正線圈35, 36與贿粒子調整線圈 37之構成的片狀電漿成膜裝置。 《測試例1》 測試例1中，係使用該實施例丨及比較例i之片狀電 漿成膜裝置’並使㈣作从23，進行對基板24成膜之試 驗其中忒基板24係將主面形成有孔（直徑為5〇〇nm、深度 為35〇nm)之Si〇2之層塗布於矽。此外測試例i中實施例 1及比較例1之片狀電漿成膜裝置的運轉條件，係氬氣之流 量為2〇sccm、陰極—陽極間之放電電流為8〇A、成膜室3 之壓力為1.0x10 ipa、靶23與基板24之距離（T/s距離）為 360mm、施加於靶23之偏壓電壓為1〇〇〇v、以及施加於基 板24之偏壓電壓為2〇〇V/又，使17 3A之電流流經第2 電漿形狀修正線圈36，使18.7A之電流流至濺鍍粒子調整 線圈3 7。 圖3係表示測試例1之結果。如圖3所示，可知在使 用比較例1之片狀電漿成膜裝置使基板24成膜時，會在形 成槽之内面形成外伸且底部覆蓋率較低。另一方面，可知 在使用實施例1之片狀電漿成膜裝置時，在形成槽之内面 無外伸形成並能以良好底部覆蓋率成膜。 17 200926906 板以上結果，確認出本發明之片狀電漿成膜裝置，可 抑制在形成槽或孔之内面形成外伸，並能以良好底部覆蓋 率成膜。 從上述說明，熟悉此技藝人士應可清楚了解本發明之 諸多改良或其他實施形態。因此，上述說明應解釋為僅係 例示，其提供目的係將用以執行本發明之較佳形態對熟系 此技藝人士進行示範。在不脫離本發明之精神下，可實質 變更其詳細構造及/或功能。 本發明之片狀電漿成膜裝置，由於可抑制在形成槽或 孔之内面形成外伸，並能以良好底部覆蓋率成臈在形成槽 或孔之内面，因此能以良好效率於基板進行成膜，且就生 產效率局之片狀電漿成膜裝置而言極有效用。 【圖式簡單說明】 圖1係表示本發明之實施形態1之片狀電漿成膜裝置 之概略構成的示意圖。 圖2係表示實施例丨所使用之片狀電漿成臈裝置之成 膜至之概略構成的示意立體圖。 圖3(a)、（b)係表示測試例1之結果。 【主要元件符號說明】 1 電漿搶 2 片狀電漿變形室 3 成膜室 200926906 ❹ ❹ 4 陽極室 11 第1筒構件 12 蓋構件 13 陰極 14 主電源 15 中間電極 16 中間電極 17 放電空間 18 輸送空間 19a 永久磁鐵 19b 永久磁鐵 20 成形電磁線圈 21 成膜空間 22 第1瓶頸部 23 靶 24 基板 25 基板保持具 26 第1驅動機構 27 偏壓電源 28 靶保持具 29 第2驅動機構 30 偏壓電源 31 調整閥 32 排氣口 19 200926906 ❹ 33 第1電磁線圈 34 第2電磁線圈 35 第1電漿形狀修正線圈 36 第2電漿形狀修正線圈 37 濺鍍粒子調整線圈 38 靶空間 39 基板空間 40 第2瓶頸部 41 蓋構件 42 陽極 43 永久磁鐵+ The distance between the main surface of the flying target 23 and the sheet-like plasma SP is substantially 疋, and the substrate 24 can be uniformly formed into a film. EXAMPLES Next, an embodiment of the moon-shaped electrofilm-forming apparatus of the present invention will be described. [Embodiment 1] The chip-shaped plasma film forming apparatus of the first embodiment is the same as the basic configuration of the sheet-shaped electropolymer film forming apparatus 1GG of the embodiment i, but is omitted! A coil-shaped plasma film forming apparatus 1 that is provided with only the second plasma-shaped correction coil % as the first magnetic field generator is constructed. Hereinafter, it will be described in detail with reference to Fig. 2 . Fig. 2 is a schematic perspective view showing a schematic configuration of a film forming chamber 3 of the sheet-like plasma film forming apparatus 100 used in the first embodiment. In addition, in FIG. 2, the target holder 28 and the like are omitted, and as shown in FIG. 2, the sheet-shaped plasma film forming apparatus 1 of the first embodiment is a second plasma shape correction coil 36 and money. The plating particle adjusting coil 37 is provided outside the film forming chamber 3. Specifically, the second plasma shape correction coil =, the worm is formed by a portion of 50 Å to 90 mm from the upper end portion of the film chamber 3. The particle adjusting coil 37 is formed by winding a metal wire of 2 mm along the surface of the 16 2009 26906 surface 300 times from the upper end portion of the film forming chamber 3 to the portion which is bright to her n. [Comparative Example 1] The sheet-shaped electropolymerization film forming apparatus of Comparative Example 1 is a conventional sheet-shaped electropolymerization film forming apparatus, that is, the sheet-like money film forming apparatus (10) shown in the drawing, and the first and second electric powers are not constructed. A sheet-shaped plasma film forming apparatus comprising a slurry shape correcting coil 35, 36 and a brittle particle adjusting coil 37. <<Test Example 1>> In the test example 1, the sheet-like plasma film forming apparatus of the examples 丨 and the comparative example i was used, and (4) was subjected to a test for forming a film on the substrate 24 from 23, wherein the ruthenium substrate 24 was A layer of Si〇2 having pores (having a diameter of 5 〇〇 nm and a depth of 35 〇 nm) was formed on the main surface and coated on the crucible. Further, in the test example i, the operating conditions of the sheet-like plasma film forming apparatus of Example 1 and Comparative Example 1 were that the flow rate of argon gas was 2 〇 sccm, and the discharge current between the cathode and the anode was 8 〇 A, and the film forming chamber 3 The pressure is 1.0 x 10 ipa, the distance between the target 23 and the substrate 24 (T/s distance) is 360 mm, the bias voltage applied to the target 23 is 1 〇〇〇 v, and the bias voltage applied to the substrate 24 is 2 〇. 〇V/ again, the current of 17 3A flows through the second plasma shape correcting coil 36, and the current of 18.7A flows to the sputter particle adjusting coil 37. Fig. 3 shows the results of Test Example 1. As shown in Fig. 3, when the sheet-like plasma film forming apparatus of Comparative Example 1 was used to form the substrate 24, the inner surface of the forming groove was formed to have an overhang and the bottom coverage was low. On the other hand, it is understood that when the sheet-shaped plasma film forming apparatus of the first embodiment is used, the inner surface of the groove is formed without overhanging and can be formed with a good bottom coverage. 17 200926906 As a result of the above-mentioned board, it was confirmed that the sheet-like plasma film forming apparatus of the present invention can suppress the formation of the overhang on the inner surface of the groove or the hole, and can form a film with a good bottom coverage. From the above description, many modifications and other embodiments of the invention will be apparent to those skilled in the art. Accordingly, the description is to be construed as illustrative only, The detailed construction and/or function may be changed substantially without departing from the spirit of the invention. The sheet-like plasma film forming apparatus of the present invention can suppress the formation of the overhang on the inner surface of the groove or the hole, and can form the groove or the inner surface of the hole with a good bottom coverage, so that the substrate can be performed with good efficiency. Film formation, and is extremely effective for the production efficiency of the sheet-like plasma film forming apparatus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a schematic configuration of a sheet-like plasma film forming apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic perspective view showing a schematic configuration of a sheet-like plasma forming apparatus used in the embodiment. 3(a) and 3(b) show the results of Test Example 1. [Main component symbol description] 1 plasma grab 2 sheet plasma deformation chamber 3 film forming chamber 200926906 ❹ ❹ 4 anode chamber 11 first cylinder member 12 cover member 13 cathode 14 main power source 15 intermediate electrode 16 intermediate electrode 17 discharge space 18 Transport space 19a Permanent magnet 19b Permanent magnet 20 Formed electromagnetic coil 21 Film forming space 22 First neck portion 23 Target 24 Substrate 25 Substrate holder 26 First drive mechanism 27 Bias power supply 28 Target holder 29 Second drive mechanism 30 Bias Power supply 31 Adjustment valve 32 Exhaust port 19 200926906 ❹ 33 First electromagnetic coil 34 Second electromagnetic coil 35 First plasma shape correction coil 36 Second plasma shape correction coil 37 Sputter particle adjustment coil 38 Target space 39 Substrate space 40 Second bottle neck portion 41 cover member 42 anode 43 permanent magnet
2020