JP2007154230A - Film-forming apparatus - Google Patents
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Abstract
Description
本発明は成膜装置に関する。 The present invention relates to a film forming apparatus.
図7の符号101は従来技術の成膜装置を示している。
この蒸着装置101は真空槽102を有しており、真空槽102の底壁には蒸着源103が取り付けられている。
蒸着源130は円筒状のアノード電極131と、アノード電極131内部に配置された放電部135とを有している。放電部135は、蒸着材料134と、トリガ電極132とを有しており、トリガ電極132と蒸着材料134はそれぞれ電源装置141に接続されている。
Reference numeral 101 in FIG. 7 denotes a conventional film forming apparatus.
The vapor deposition apparatus 101 has a vacuum chamber 102, and a vapor deposition source 103 is attached to the bottom wall of the vacuum chamber 102.
The vapor deposition source 130 includes a cylindrical anode electrode 131 and a discharge unit 135 disposed inside the anode electrode 131. The discharge unit 135 includes a vapor deposition material 134 and a trigger electrode 132, and the trigger electrode 132 and the vapor deposition material 134 are each connected to a power supply device 141.
真空槽102には真空排気系109が接続されており、真空排気系109によって真空槽102内部を真空排気して真空雰囲気を形成した後、アノード電極131を接地電位に置いた状態で、トリガ電極132と蒸着材料134との間にトリガ放電を起こすと、トリガ放電によってアノード電極131と蒸着材料134との間にアーク放電が誘起される。 An evacuation system 109 is connected to the vacuum chamber 102. After the vacuum chamber 102 is evacuated by the evacuation system 109 to form a vacuum atmosphere, the trigger electrode is placed with the anode electrode 131 at the ground potential. When a trigger discharge occurs between 132 and the vapor deposition material 134, an arc discharge is induced between the anode electrode 131 and the vapor deposition material 134 by the trigger discharge.
アーク放電が誘起されると、アノード電極131から蒸着材料134に向かってアーク電流が流れ、蒸着材料134の側面から蒸着材料134の粒子が放出される。蒸着材料の粒子のうち、荷電粒子はアーク電流が形成する磁界によって飛行以降が曲げられ、アノード電極131の開口136から真空槽102内部に放出される。 When the arc discharge is induced, an arc current flows from the anode electrode 131 toward the vapor deposition material 134, and particles of the vapor deposition material 134 are emitted from the side surface of the vapor deposition material 134. Among the particles of the vapor deposition material, the charged particles are bent after the flight by the magnetic field formed by the arc current, and are released into the vacuum chamber 102 from the opening 136 of the anode electrode 131.
基板ホルダ107は基板111を開口136と対向する位置を通過させるように水平面内で回転し、基板111が開口136と対向する位置を通過する時に、その表面に荷電粒子が到達して蒸着材料の薄膜が形成される。 The substrate holder 107 rotates in a horizontal plane so that the substrate 111 passes through a position facing the opening 136. When the substrate 111 passes through a position facing the opening 136, charged particles reach the surface of the substrate 111 and the deposition material A thin film is formed.
上述した成膜装置101では、アーク放電の回数で成膜量が決まるので、アーク放電の回数を設定することで非常に薄い膜(1〜2nm)でも制御よく成膜することが可能である。
また、蒸着源130から放出される粒子の飛行速度は10000m/秒以下(文献:J、Vac.Sec.Jpn(真空)Vol.47、No.9、2004 pl3)と早いため非常に平坦な膜が形成される(Ulvac techinical Journal No.49 1998 p9)。
In the above-described film forming apparatus 101, the amount of film formation is determined by the number of arc discharges. Therefore, even a very thin film (1 to 2 nm) can be formed with good control by setting the number of arc discharges.
Further, since the flight speed of particles emitted from the vapor deposition source 130 is as fast as 10,000 m / sec or less (reference: J, Vac. Sec. Jpn (vacuum) Vol. 47, No. 9, 2004 pl3), the film is very flat. (Ulvac technical Journal No. 49 1998 p9).
この特徴は磁性デバイス、特にMRAM等の磁性、非磁性材料をnmの薄膜で積層させていくプロセスに向いている。例えばCo・FeNi/Ta/Py/Ir・Mn等を膜厚がnmの単位で積層させなければならない時には、真空槽102内に蒸着源130を4つ搭載した装置を用いれば、同じ基板の上に上記材料を積層させることができる。 This feature is suitable for a process of laminating magnetic and nonmagnetic materials such as MRAM with a thin film of nm, such as MRAM. For example, when it is necessary to stack Co.FeNi / Ta / Py / Ir.Mn or the like in units of nm, if an apparatus having four deposition sources 130 in the vacuum chamber 102 is used, The above materials can be laminated.
図7に示した同軸型真空アーク蒸着源130ではカソード材(蒸着材料134)に用いた合金の比率と、成膜された薄膜中の合金の比率が略等しくなることが確認されており、所望の合金比率のカソード材を用いることで、所望の合金比率の薄膜が成膜される。 In the coaxial vacuum arc deposition source 130 shown in FIG. 7, it has been confirmed that the ratio of the alloy used for the cathode material (deposition material 134) and the ratio of the alloy in the formed thin film are substantially equal. By using a cathode material having an alloy ratio of, a thin film having a desired alloy ratio is formed.
ところで、アーク電流が流れる時には、蒸着材料134の一部が溶融し、その溶融部分から直径約50〜100μmの溶融物(ドロップレット)が放出される。 図8の符号147はそのドロップレットを示しており、ドロップレット147はそのまま開口136から放出されるか、アノード電極131の内壁面に衝突して直径約1〜5μmの細かいドロップレット146となって開口136から放出される(図8)。 By the way, when the arc current flows, a part of the vapor deposition material 134 is melted, and a melt (droplet) having a diameter of about 50 to 100 μm is discharged from the melted portion. Reference numeral 147 in FIG. 8 shows the droplet. The droplet 147 is discharged as it is from the opening 136 or collides with the inner wall surface of the anode electrode 131 to become a fine droplet 146 having a diameter of about 1 to 5 μm. It is discharged from the opening 136 (FIG. 8).
従って、開口136からは荷電粒子145の他に、大小のドロップレット146、147が放出されることになる。このドロップレット146、147は大小いずれのものも直径が1μm以上であり、荷電粒子に比べて非常に大きい。このようなドロップレット146、147が成膜中の薄膜に混入すると膜質が悪くなり、成膜後に得られるデバイスの機能が低下する。 Therefore, large and small droplets 146 and 147 are emitted from the opening 136 in addition to the charged particles 145. These droplets 146 and 147 have a diameter of 1 μm or more, both large and small, and are very large compared to charged particles. When such droplets 146 and 147 are mixed into a thin film during film formation, the film quality deteriorates, and the function of the device obtained after film formation deteriorates.
このドロプレット146、147を除去するためには色々な方法が考案されている。その一つにはアーク蒸着源130の前方で水車のようなフィルタ(以下、Vane型フィルタと呼称する)を高速回転させて、ドロプレット146、147と、荷電粒子145の飛行速度の差から、荷電粒子145よりも飛行速度の遅い1μm以上のドロプレット146、147を捕獲するものである。但し、このVane型フィルタを用いる方法では、蒸着材料の種類によっては非常に高速に回転させなければならず、コストと安全面からも問題が多い。 Various methods have been devised for removing the droplets 146 and 147. One of them is that a filter such as a water wheel (hereinafter referred to as a Vane type filter) is rotated at a high speed in front of the arc deposition source 130, and charging is performed based on a difference in flight speed between the droplets 146 and 147 and the charged particles 145. The droplets 146 and 147 having a flight speed of 1 μm or more slower than the particles 145 are captured. However, in the method using this Vane type filter, it must be rotated at a very high speed depending on the kind of the vapor deposition material, and there are many problems from the viewpoint of cost and safety.
他の方法としては、開口136から基板111に向かう進行方向に沿って磁力線を形成して、その磁力線を這わせて荷電粒子を輸送する方法がある(例えば特許文献2、3を参照)。この方法は装置が大掛かりになるだけではなく、開口136から基板111までの輸送空間の距離が長く、荷電粒子の基板111への到達量が減少してしまい、成膜効率が悪くなる。 As another method, there is a method of transporting charged particles by forming magnetic lines of force along the traveling direction from the opening 136 toward the substrate 111 (see, for example, Patent Documents 2 and 3). In this method, not only the apparatus becomes large, but also the distance of the transport space from the opening 136 to the substrate 111 is long, the amount of charged particles reaching the substrate 111 is reduced, and the film formation efficiency is deteriorated.
更に、その輸送空間を形成するために磁界形成手段を真空槽102内に配置すると、ドロップレットがその磁界形成手段に衝突して細かいドロップレットが発生し、そのドロップレットが成膜中の薄膜に混入するという新たな問題も生じた。 Further, when the magnetic field forming means is arranged in the vacuum chamber 102 to form the transport space, the droplet collides with the magnetic field forming means to generate fine droplets, and the droplets are formed on the thin film being formed. There was also a new problem of contamination.
また、ヨークと磁石を用いて90度以上折れ曲がった磁気回路を形成し、その磁気回路の磁力線と荷電粒子の拡散方向とを同じにして、荷電粒子の飛行方向を偏向させる方式では(例えば特許文献4を参照)、ドロプレットは低減できるが、磁力線が磁石上に近づくため磁束密度が高くなり、荷電粒子が収束し飛行粒子の密度が高くなり、大きな面積に均一に照射できない問題があった。
本発明は上記課題を解決するためのものであり、その目的は、成膜面積を狭くせず、成膜効率も下げずに薄膜に混入するドロップレットを低減させることである。 The present invention is to solve the above-described problems, and an object of the present invention is to reduce droplets mixed into the thin film without reducing the film formation area and without reducing the film formation efficiency.
上記課題を解決するために請求項1記載の発明は、真空槽と、前記蒸着材料の荷電粒子を前記真空槽内に放出する蒸着源とを有し、前記真空槽内に配置された基板に前記荷電粒子を到達させ、前記基板表面に薄膜が形成されるように構成された成膜装置であって、前記成膜装置は、前記放出された荷電粒子の放出方向とは垂直な一方向に磁力線を形成する磁界形成手段を有する成膜装置である。
請求項2記載の発明は、請求項1記載の成膜装置であって、前記蒸着源から放出され、前記磁力線から加えられたローレンツ力で曲げられた電子の飛行方向に基板を配置し、前記基板の表面に前記蒸着材料の荷電粒子が到達するように構成された成膜装置である。
請求項3記載の発明は、請求項1又は請求項2のいずれか1項記載の成膜装置であって、前記蒸着源は、筒状のアノード電極と、前記アノード電極の内部に配置された放電部とを有し、前記放電部は蒸着材料とトリガ電極とを有し、前記トリガ電極と前記蒸着材料との間にトリガ放電を発生させると、前記アノード電極と前記蒸着材料との間にアーク放電が誘起され、前記アーク放電によって前記アノード電極と前記蒸着材料の間にアーク電流が流れ、前記蒸着材料から前記荷電粒子が放出され、前記荷電粒子は前記アーク電流が形成する磁界によってその飛行方向が曲げられ、前記アノード電極の開口から前記真空槽内部に放出されるよう構成された成膜装置である。
請求項4記載の発明は、請求項3記載の成膜装置であって、前記アノード電極は、その中心軸線が前記磁力線と直交するよう配置された成膜装置である。
In order to solve the above-mentioned problem, an invention according to claim 1 is provided on a substrate having a vacuum chamber and a vapor deposition source for discharging charged particles of the vapor deposition material into the vacuum chamber, and disposed in the vacuum chamber. A film forming apparatus configured to allow the charged particles to reach and form a thin film on the substrate surface, wherein the film forming apparatus is in a direction perpendicular to a direction in which the discharged charged particles are emitted. A film forming apparatus having magnetic field forming means for forming magnetic lines of force.
Invention of Claim 2 is the film-forming apparatus of Claim 1, Comprising: A board | substrate is arrange | positioned in the flight direction of the electron discharge | released from the said vapor deposition source, and bent by the Lorentz force applied from the said magnetic force line, The said The film forming apparatus is configured such that the charged particles of the vapor deposition material reach the surface of the substrate.
Invention of Claim 3 is the film-forming apparatus of Claim 1 or Claim 2, Comprising: The said vapor deposition source is arrange | positioned inside the cylindrical anode electrode and the said anode electrode A discharge portion, and the discharge portion includes a vapor deposition material and a trigger electrode. When a trigger discharge is generated between the trigger electrode and the vapor deposition material, the discharge portion is interposed between the anode electrode and the vapor deposition material. An arc discharge is induced, an arc current flows between the anode electrode and the deposition material by the arc discharge, the charged particles are released from the deposition material, and the charged particles fly by the magnetic field formed by the arc current. The film forming apparatus is configured such that the direction is bent and discharged from the opening of the anode electrode into the vacuum chamber.
According to a fourth aspect of the present invention, there is provided the film forming apparatus according to the third aspect, wherein the anode electrode is disposed such that a central axis thereof is orthogonal to the magnetic field lines.
本発明は上記のように構成されており荷電粒子が真空槽内に放出される放出方向と垂直な方向に磁力線を形成すると、磁力線によって荷電粒子と電子との飛行方向が曲げられる。
このとき、ドロップレットは磁力線の影響を受けずに直進するので、基板を直進するドロップレットが到達しない位置であって、飛行方向が曲げられた荷電粒子が到達する場所に配置すれば、基板表面にドロップレットの混入が無い薄膜を形成することができる。
The present invention is configured as described above. When the magnetic lines of force are formed in a direction perpendicular to the emission direction in which the charged particles are discharged into the vacuum chamber, the flight direction of the charged particles and the electrons is bent by the magnetic lines of force.
At this time, since the droplets go straight without being affected by the magnetic lines of force, if the droplets that go straight through the substrate do not reach and where the charged particles whose flight direction is bent reach, the substrate surface It is possible to form a thin film in which no droplets are mixed.
本発明によれば、従来のように荷電粒子を長い距離飛行させなくても、磁力線が形成された領域を通過させるだけで荷電粒子とドロップレットを分離させることができるので、成膜効率が高い。 According to the present invention, the charged particles can be separated from the droplets only by allowing the charged particles to pass through the region where the magnetic field lines are formed without flying the charged particles for a long distance as in the prior art. .
荷電粒子の飛行方向を変えるための磁力線は、荷電粒子の放出方向と直交すればよく、従来のように磁力線を曲げる必要が無いので、磁界形成手段の装置の構造も簡易である。 The magnetic field lines for changing the flight direction of the charged particles need only be orthogonal to the discharge direction of the charged particles, and there is no need to bend the magnetic field lines as in the prior art, so that the structure of the magnetic field forming means is simple.
荷電粒子は磁力線に沿って飛行せずに、磁力線によって飛行方向を曲げられた後は直進するので、上記磁気回路を用いた従来の成膜装置のように、荷電粒子が収束しない。従って、基板表面に荷電粒子が到達し、薄膜が成長する領域が狭くならない。 The charged particles do not fly along the lines of magnetic force, but go straight after the flight direction is bent by the lines of magnetic force, so that the charged particles do not converge as in the conventional film forming apparatus using the magnetic circuit. Accordingly, the charged particles reach the substrate surface, and the region where the thin film grows is not narrowed.
磁界形成手段を真空槽の外部に配置すれば、装置の構成やメンテナンスが容易になるだけではなく、蒸着源から放出されるドロップレットが磁界形成手段に衝突せず、細かいドロップレットが飛散しないので、薄膜中のドロップレット混入が低減される。 If the magnetic field forming means is arranged outside the vacuum chamber, not only the configuration and maintenance of the apparatus becomes easy, but also the droplets emitted from the vapor deposition source do not collide with the magnetic field forming means, and fine droplets do not scatter. , Droplet contamination in the thin film is reduced.
本発明によれば、基板表面にはドロップレットが到達しないので、基板表面に膜質の良い薄膜を形成することができる。また、荷電粒子を長い距離飛行させなくても、ドロップレットから分離可能であり、成膜効率が高い。荷電粒子は飛行中に収束されないので、成膜領域も狭くならない。 According to the present invention, since the droplets do not reach the substrate surface, a thin film with good film quality can be formed on the substrate surface. Further, the charged particles can be separated from the droplets without flying for a long distance, and the film formation efficiency is high. Since the charged particles are not converged during the flight, the deposition region is not narrowed.
図1の符号1は本発明の成膜装置の一例を示しており、成膜装置1は真空槽2と、基板ホルダ7と、蒸着源30と、磁界形成手段50とを有してる。
真空槽2の天井には軸状の回転力伝達手段20が気密に挿通されており、回転力伝達手段20は外軸23と、外軸23に挿通された内軸22とを有している。
Reference numeral 1 in FIG. 1 shows an example of the film forming apparatus of the present invention. The film forming apparatus 1 includes a vacuum chamber 2, a substrate holder 7, a vapor deposition source 30, and a magnetic field forming means 50.
A shaft-like rotational force transmitting means 20 is inserted in an airtight manner in the ceiling of the vacuum chamber 2, and the rotational force transmitting means 20 has an outer shaft 23 and an inner shaft 22 inserted through the outer shaft 23. .
基板ホルダ7は円盤状であって、真空槽2の内部で水平にされた状態で外軸23に接続されている。
基板ホルダ7には、その円盤の放射方向の中央位置から所定距離離間した場所に複数の取り付け部8がそれぞれ設けられており、各取り付け部8は成膜対象物である基板11を略水平に保持するよう構成されている。図1は各取り付け部8に基板11がそれぞれ保持された状態を示している。
The substrate holder 7 has a disk shape and is connected to the outer shaft 23 in a state of being horizontal in the vacuum chamber 2.
The substrate holder 7 is provided with a plurality of attachment portions 8 at positions separated from the center position in the radial direction of the disk by a predetermined distance, and each attachment portion 8 holds the substrate 11 as a film formation target substantially horizontally. Configured to hold. FIG. 1 shows a state in which the substrate 11 is held by each mounting portion 8.
外軸23と内軸22はそれぞれ真空槽2外部の動力手段26、27に接続されている。基板ホルダ7には外軸23によって動力手段27の動力が伝達され、基板ホルダ7は円盤の中心を回転中心C1として水平面内で回転する。 The outer shaft 23 and the inner shaft 22 are connected to power means 26 and 27 outside the vacuum chamber 2, respectively. The power of the power means 27 is transmitted to the substrate holder 7 by the outer shaft 23, and the substrate holder 7 rotates in the horizontal plane with the center of the disk as the rotation center C1.
取り付け部8には内軸22によって動力手段26の動力が伝達されるように構成されており、その動力が取り付け部8に伝達されると、基板11は基板ホルダ7の回転中心C1を中心とした円周に沿って移動しながら、基板11の中心C2と基板ホルダ7の回転中心C1とが相対的に静止した状態で、その中心C2を回転中心として水平面内で回転するように構成されている。 The mounting portion 8 is configured such that the power of the power means 26 is transmitted by the inner shaft 22, and when the power is transmitted to the mounting portion 8, the substrate 11 is centered on the rotation center C <b> 1 of the substrate holder 7. The center C2 of the substrate 11 and the rotation center C1 of the substrate holder 7 are relatively stationary while moving along the circumference, and the center C2 is configured to rotate in the horizontal plane with the center C2 as the rotation center. Yes.
蒸着源30は真空槽2側壁の底壁近傍に取り付けられている。蒸着源30は筒状のアノード電極31を有しており、アノード電極31は一端部が真空槽2に気密に挿通されている。図1の符号36はアノード電極31の筒の開口のうち、真空槽2内部に配置された開口を示しており、後述するようにアノード電極31の内部で粒子が発生すると、粒子は開口36から真空槽2内部に放出される。 The vapor deposition source 30 is attached near the bottom wall of the side wall of the vacuum chamber 2. The vapor deposition source 30 has a cylindrical anode electrode 31, and one end of the anode electrode 31 is inserted into the vacuum chamber 2 in an airtight manner. Reference numeral 36 in FIG. 1 indicates an opening disposed in the vacuum chamber 2 among the openings of the cylinder of the anode electrode 31. When particles are generated inside the anode electrode 31 as described later, the particles are released from the opening 36. It is discharged into the vacuum chamber 2.
図2の符号Fは開口36の中心を通る軸線であって、開口36が構成する平面を垂直に通る放出軸線を示している。この放出軸線Fは真空槽2のアノード電極31とは反対側の側壁と交差しており、粒子はその放出軸線Fと平行な方向、即ち真空槽2の側壁に向かう方向に放出される。
磁界形成手段50は第一、第二の磁石部材51、52を有している。第一、第二の磁石部材51、52は板状であって、片面を真空槽2の側壁に向けて鉛直に立設されている。
Reference numeral F in FIG. 2 denotes an axis passing through the center of the opening 36, and indicates an emission axis passing vertically through a plane formed by the opening 36. The emission axis F intersects the side wall of the vacuum chamber 2 opposite to the anode electrode 31, and the particles are emitted in a direction parallel to the emission axis F, that is, a direction toward the side wall of the vacuum chamber 2.
The magnetic field forming means 50 has first and second magnet members 51 and 52. The first and second magnet members 51 and 52 are plate-like, and are erected vertically with one side facing the side wall of the vacuum chamber 2.
図2の符号53は第一の磁石部材51の真空槽2側の表面(第一面)を、同図の符号54は第二の磁石部材52の真空槽2側の表面(第二面)をそれぞれ示しており、第一、第二面に53、54にはそれぞれ磁極が形成されている。 2 is the surface (first surface) of the first magnet member 51 on the vacuum chamber 2 side, and 54 in FIG. 2 is the surface (second surface) of the second magnet member 52 on the vacuum chamber 2 side. The magnetic poles are formed on the first and second surfaces 53 and 54, respectively.
第一面53に形成された磁極と、第二面54に形成された磁極の組み合わせは、第一面53にN極がある時には第二面54にS極があり、第一面53にS極がある時には第二面54にN極がある。従って、第一、第二面53、54には互いに反対の磁性の磁極が形成されている。 The combination of the magnetic pole formed on the first surface 53 and the magnetic pole formed on the second surface 54 is such that when the first surface 53 has an N pole, the second surface 54 has an S pole and the first surface 53 has an S pole. When there is a pole, there is an N pole on the second surface 54. Accordingly, magnetic poles opposite to each other are formed on the first and second surfaces 53 and 54.
第一、第二面53、54の形状は同じ形、同じ面積にされており、第一、第二の磁石部材51、52は、第一、第二面53、54の間に、第一、第二面53、54に対して垂直な磁力線が形成されるように、真空槽2を挟んで互いに平行に向き合っている。ここでは、真空槽2は透磁性の材料で構成されており、従って真空槽2の内部には平行な磁力線が通る偏向空間39が形成される。 The first and second surfaces 53 and 54 have the same shape and the same area, and the first and second magnet members 51 and 52 are arranged between the first and second surfaces 53 and 54. Further, they face each other in parallel with the vacuum chamber 2 interposed therebetween so that magnetic lines of force perpendicular to the second surfaces 53 and 54 are formed. Here, the vacuum chamber 2 is made of a magnetically permeable material. Therefore, a deflection space 39 through which parallel lines of magnetic force pass is formed inside the vacuum chamber 2.
蒸着源30は、放出軸線Fが、偏向空間39の略中央位置を、その偏向空間39を通る磁力線と垂直な角度で貫くように配置されており、開口36から放出される粒子は、偏向空間の磁力線に対して垂直方向に入射する。 The vapor deposition source 30 is arranged such that the emission axis F penetrates the substantially central position of the deflection space 39 at an angle perpendicular to the magnetic field lines passing through the deflection space 39, and particles emitted from the opening 36 are arranged in the deflection space. Incident in the direction perpendicular to the magnetic field lines.
開口36から放出される粒子には、正の荷電粒子と、負の荷電粒子(例えば電子)とがある。フレミング左手の法則で、偏向空間39を通る磁力線の向きMを人差し指の指し示す方向とし、開口36から放出される正の荷電粒子の放出方向を中指の指し示す方向とし、その正の荷電粒子に加えられるローレンツ力の向きを親指の指し示す方向とした時に、第一面53の磁極と、第二面54の磁極との組み合わせは、親指の指し示す方向が鉛直下向き、即ち基板ホルダ7と反対側を指し示すようになっている。 The particles emitted from the opening 36 include positive charged particles and negative charged particles (for example, electrons). According to Fleming's left-hand rule, the direction M of the magnetic field lines passing through the deflection space 39 is the direction indicated by the index finger, and the emission direction of positive charged particles emitted from the opening 36 is the direction indicated by the middle finger, and is added to the positive charged particles. When the direction of the Lorentz force is the direction indicated by the thumb, the combination of the magnetic pole of the first surface 53 and the magnetic pole of the second surface 54 is such that the direction indicated by the thumb is vertically downward, that is, indicates the opposite side to the substrate holder 7. It has become.
開口36から放出される電子は、正の荷電粒子に加えられるローレンツ力の向きと反対方向の力を受け、鉛直上向き、即ち基板ホルダ7が位置する方向に曲げられ、基板ホルダ7の近傍に電子雲が形成される。
上述したように電子雲が形成された状態では、開口36から放出された微小荷電粒子45には、電子雲から静電吸着力が加えられる。その静電吸着力の方向は基板ホルダ7が位置する方向である。
The electrons emitted from the opening 36 are subjected to a force in the direction opposite to the direction of the Lorentz force applied to the positive charged particles, bent vertically upward, that is, in the direction in which the substrate holder 7 is located, and in the vicinity of the substrate holder 7 A cloud is formed.
As described above, in the state in which the electron cloud is formed, an electrostatic adsorption force is applied to the minute charged particles 45 emitted from the opening 36 from the electron cloud. The direction of the electrostatic attraction force is the direction in which the substrate holder 7 is located.
正の荷電粒子には電荷質量比(電荷/質量)が大きいものと小さいものがある。図3の符号45は正の荷電粒子のうち、電荷質量比が大きい微小荷電粒子を示しており、微小荷電粒子45は静電吸着力とローレンツ力との差の力による影響が大きいから、静電吸着力がローレンツ力よりも大きくなると、その飛行方向が基板ホルダ7が位置する方向に曲がる。 The positively charged particles include those having a large charge mass ratio (charge / mass) and those having a small charge mass ratio. Reference numeral 45 in FIG. 3 indicates a minute charged particle having a large charge mass ratio among positive charged particles. The minute charged particle 45 is greatly affected by the difference between the electrostatic adsorption force and the Lorentz force. When the electroadsorption force becomes larger than the Lorentz force, the flight direction bends in the direction in which the substrate holder 7 is located.
基板ホルダ7と、第一、第二の磁石部材51、52と、開口36との位置関係は、飛行方向が曲げられた微小荷電粒子45が、基板11が移動する円周の一部(成膜領域6)に到達するように構成されており、飛行方向が曲げられた微小荷電粒子45は成膜領域6を通過する基板11の表面に入射して薄膜が成長する。 The positional relationship between the substrate holder 7, the first and second magnet members 51, 52, and the opening 36 is such that the minute charged particles 45 whose flight direction is bent are part of the circumference (the component of the substrate 11 moves). The minute charged particles 45, which are configured to reach the film region 6) and whose flight direction is bent, enter the surface of the substrate 11 passing through the film formation region 6, and a thin film grows.
このとき、基板11をその中心C2を回転中心として水平面内で回転させておけば、基板11表面に到達する微小荷電粒子45の量が均一化されるので、基板11表面には膜厚均一な薄膜が形成される。 At this time, if the substrate 11 is rotated in the horizontal plane with the center C2 as the center of rotation, the amount of minute charged particles 45 reaching the surface of the substrate 11 is made uniform. A thin film is formed.
他方、質量が大きい荷電粒子や中性粒子等の巨大粒子46は、微小荷電粒子45に比べて電荷質量比が非常に小さく、静電吸着力とローレンツ力との差の力による影響が小さいから、静電気力がローレンツ力よりも大きくなっても、その飛行方向が変らず、放出軸線Fに沿って移動する。 On the other hand, giant particles 46 such as charged particles and neutral particles having a large mass have a very small charge-mass ratio compared to the minute charged particles 45, and are less affected by the difference between the electrostatic adsorption force and the Lorentz force. Even if the electrostatic force becomes larger than the Lorentz force, the flight direction does not change, and moves along the discharge axis F.
従って、巨大粒子46は基板11に到達せず、基板11に成長する薄膜に巨大粒子46が混入されないので、基板11表面には膜質の良い薄膜が形成される。尚、本発明で微小荷電粒子45とは1000個以上2000個以下の原子が集合したクラスタ粒子や、クラスタ粒子よりも質量が小さい原子状粒子であって、直径が1μm未満のものを示し、巨大粒子46とは直径1μm以上のものを示す。 Accordingly, the giant particles 46 do not reach the substrate 11, and the giant particles 46 are not mixed into the thin film that grows on the substrate 11, so that a thin film with good film quality is formed on the surface of the substrate 11. In the present invention, the micro charged particle 45 is a cluster particle in which 1000 or more and 2000 or less atoms are gathered, or an atomic particle having a mass smaller than that of the cluster particle and having a diameter of less than 1 μm. The particles 46 are those having a diameter of 1 μm or more.
次に、本発明の成膜装置1に用いられる蒸着源30の一例について説明すると、図1に示すように、蒸着源30はアノード電極31の他に放電部35を有している。
放電部35は棒状であって、先端を開口36に向けた状態でアノード電極31の内部に配置されている。放電部35は蒸着材料34とトリガ電極32とを有しており、蒸着材料34は放電部35の先端に配置され、トリガ電極32は蒸着材料34よりもアノード電極31底壁側に配置されている。
Next, an example of the vapor deposition source 30 used in the film forming apparatus 1 of the present invention will be described. As shown in FIG. 1, the vapor deposition source 30 has a discharge portion 35 in addition to the anode electrode 31.
The discharge part 35 is rod-shaped and is disposed inside the anode electrode 31 with the tip directed toward the opening 36. The discharge part 35 has a vapor deposition material 34 and a trigger electrode 32, the vapor deposition material 34 is disposed at the tip of the discharge part 35, and the trigger electrode 32 is disposed closer to the bottom wall side of the anode electrode 31 than the vapor deposition material 34. Yes.
ここでは、蒸着材料34はアノード電極31の内径よりも小径の柱状であって、その中心軸線がアノード電極31の中心軸線と一致しており、従って蒸着材料34の側面と、アノード電極31の内壁面との間には隙間がある。 Here, the vapor deposition material 34 has a columnar shape smaller in diameter than the inner diameter of the anode electrode 31, and its central axis coincides with the central axis of the anode electrode 31. There is a gap between the walls.
真空槽2の外部には電源装置41が配置されている。ここでは電源装置41はトリガ電源42と、アーク電源43と、コンデンサユニット44とを有しており、アーク電源43を動作させるとコンデンサユニット44が充電される。
トリガ電源42はトリガ電極32と蒸着材料34の間に電圧を印加するよう構成されている。
A power supply device 41 is disposed outside the vacuum chamber 2. Here, the power supply device 41 includes a trigger power supply 42, an arc power supply 43, and a capacitor unit 44. When the arc power supply 43 is operated, the capacitor unit 44 is charged.
The trigger power source 42 is configured to apply a voltage between the trigger electrode 32 and the vapor deposition material 34.
トリガ電極32と蒸着材料34の間には絶縁碍子33が配置されており、真空槽2に接続された真空排気系9を動作させて真空槽2内部に真空雰囲気を形成し、アノード電極31と真空槽2とを接地電位に置いた状態で、トリガ電極32と蒸着材料34の間に電圧を印加すると、絶縁碍子33の側面に沿面放電が発生し、蒸着材料34と絶縁碍子33の境界から電子が放出される(トリガ放電)。 An insulator 33 is disposed between the trigger electrode 32 and the vapor deposition material 34, and the vacuum exhaust system 9 connected to the vacuum chamber 2 is operated to form a vacuum atmosphere inside the vacuum chamber 2. When a voltage is applied between the trigger electrode 32 and the vapor deposition material 34 with the vacuum chamber 2 placed at the ground potential, creeping discharge is generated on the side surface of the insulator 33, and from the boundary between the vapor deposition material 34 and the insulator 33. Electrons are emitted (trigger discharge).
コンデンサユニット44は蒸着材料34に接続されており、トリガ放電が起こるとアノード電極31と蒸着材料34との間の隙間の絶縁耐性が低下してコンデンサユニット44が放電し(アーク放電)、アノード電極31から蒸着材料34に多量の電流(1400A〜2000A、アーク電流)が流れる。
蒸着材料34にアーク電流が流れると、蒸着材料34から上述した微小荷電粒子45と電子が放出される。
The capacitor unit 44 is connected to the vapor deposition material 34, and when trigger discharge occurs, the insulation resistance of the gap between the anode electrode 31 and the vapor deposition material 34 decreases, and the capacitor unit 44 discharges (arc discharge). A large amount of current (1400 A to 2000 A, arc current) flows from 31 to the vapor deposition material 34.
When an arc current flows through the vapor deposition material 34, the above-described minute charged particles 45 and electrons are emitted from the vapor deposition material 34.
蒸着材料34は、その形状が柱状の時にはその中心軸線がアノード電極31の中心軸線と一致し、その形状がリング状の時にはリング中心をアノード電極31の中心軸線が通るように配置されており、アノード電極31の中心軸線の周りには均等に蒸着材料34が配置されているので、微小荷電粒子45と電子はアノード電極31の中心軸線を中心とする範囲に発生する。 The vapor deposition material 34 is arranged such that when the shape is columnar, the center axis thereof coincides with the center axis of the anode electrode 31, and when the shape is ring-shaped, the center axis of the anode electrode 31 passes through the center of the ring. Since the vapor deposition material 34 is uniformly arranged around the central axis of the anode electrode 31, the minute charged particles 45 and electrons are generated in a range centered on the central axis of the anode electrode 31.
蒸着材料34から放出された電子は、蒸着材料34から放出された直後はアノード電極31の内壁面に向かうが、自身の飛行により形成される磁界によってその飛行方向が開口36側に曲げられ、正の微小荷電粒子45は電子に引き寄せられてその飛行方向が電子と同じ方向に曲げられ、開口36から放出される。従って、電子と正の微小荷電粒子45が放出された方向は同じ放出軸線Fに沿った方向になる。上述したように、放出軸線Fは開口36の中心を開口36が構成する面と垂直な方向に伸びるから、放出軸線Fはアノード電極31と一致している。
荷電粒子はアノード電極31の中心軸線を中心とする範囲に発生するから、開口36から放出される微小荷電粒子45と電子の束は、その中心がアノード電極31の中心軸線と一致する。
The electrons emitted from the vapor deposition material 34 are directed toward the inner wall surface of the anode electrode 31 immediately after being emitted from the vapor deposition material 34, but the flight direction is bent toward the opening 36 by the magnetic field formed by the flight of itself. The minute charged particles 45 are attracted by electrons, and the flight direction is bent in the same direction as the electrons, and emitted from the openings 36. Therefore, the direction in which the electrons and the positive minute charged particles 45 are emitted is the direction along the same emission axis F. As described above, the emission axis F extends from the center of the opening 36 in a direction perpendicular to the plane of the opening 36, so the emission axis F coincides with the anode electrode 31.
Since charged particles are generated in a range centered on the central axis of the anode electrode 31, the center of the minute charged particles 45 and the electron bundle emitted from the opening 36 coincides with the central axis of the anode electrode 31.
尚、蒸着材料34にアーク電流が流れる時には蒸着材料34が高温に昇温し、その一部が溶融すると、その溶融した部分から直径約50μm〜100μmの液滴が飛散し、その液滴がアノード電極31の内壁面に衝突すると直径約1〜5μmの微小液滴となる。微小液滴や液滴のように直径1μm以上の粒子は電荷質量比が小さいので、上述したように基板ホルダ7が位置する方向には飛行せず、薄膜に混入されない。 When an arc current flows through the vapor deposition material 34, the vapor deposition material 34 is heated to a high temperature, and when a part thereof is melted, a droplet having a diameter of about 50 μm to 100 μm is scattered from the melted portion. When it collides with the inner wall surface of the electrode 31, it becomes a micro droplet having a diameter of about 1 to 5 μm. Since particles having a diameter of 1 μm or more such as micro droplets or droplets have a small charge-mass ratio, as described above, they do not fly in the direction in which the substrate holder 7 is located and are not mixed into the thin film.
第一、第二の磁石部材51、52として、長さ(L)150mm、高さ(H)100mm、厚み10mmの長方形の板状の永久磁石を用い、第一、第二の磁石部材51、52を、第一、第二面53、54間の空間距離が200mmになるよう配置した。第一、第二面53、54間の磁力線が形成される領域の中心の磁束密度は150Gaussであった(図4)。 As the first and second magnet members 51 and 52, rectangular plate-shaped permanent magnets having a length (L) of 150 mm, a height (H) of 100 mm, and a thickness of 10 mm are used. 52 was arranged so that the spatial distance between the first and second surfaces 53 and 54 was 200 mm. The magnetic flux density at the center of the region where the magnetic lines of force between the first and second surfaces 53 and 54 were formed was 150 Gauss (FIG. 4).
アノード電極31の中心軸線から基板11表面までの高さAが100mm、基板11の中心C2から開口36が位置する平面までの距離Bが50mmになるように基板11を配置し、真空槽2内に真空雰囲気を形成し、鉄からなる蒸着材料34を用いてアーク放電を6000発起こしたところ、基板11表面の直径10cmの領域に、膜厚分布が約±10%の範囲にあり、平均膜厚が60nm〜70nmの鉄の薄膜が形成された。この薄膜の電子顕微鏡写真を図5に示す。 The substrate 11 is arranged in the vacuum chamber 2 so that the height A from the central axis of the anode electrode 31 to the surface of the substrate 11 is 100 mm, and the distance B from the center C2 of the substrate 11 to the plane where the opening 36 is located is 50 mm. When a vacuum atmosphere was formed and an arc discharge was generated using a vapor deposition material 34 made of iron, the film thickness distribution was in the range of about ± 10% in the region of 10 cm in diameter on the surface of the substrate 11, and the average film An iron thin film having a thickness of 60 nm to 70 nm was formed. An electron micrograph of this thin film is shown in FIG.
また、比較例として磁界形成手段50を用いず、基板11を開口36と対向する位置に配置させた以外は上記実施例と同じ条件で鉄の薄膜を成膜した。比較例の薄膜の電子顕微鏡写真を図6に示す。 Further, as a comparative example, an iron thin film was formed under the same conditions as in the above example except that the magnetic field forming means 50 was not used and the substrate 11 was disposed at a position facing the opening 36. An electron micrograph of the thin film of the comparative example is shown in FIG.
図5、6を比較すると明らかなように、比較例に比べて実施例の薄膜は緻密で、液滴の混入も少なかった。このように、本願の成膜装置1を用いると液滴の混入量が少なく、膜質の良い薄膜が成膜されることが確認された。 As is clear from a comparison of FIGS. 5 and 6, the thin film of the example was denser and less mixed with droplets than the comparative example. As described above, it was confirmed that when the film forming apparatus 1 of the present application was used, a thin film having a good film quality was formed with a small amount of mixed droplets.
尚、上記実施例に用いた蒸着源30は、直径10mmの円柱状の蒸着材料34と、円板状の絶縁碍子33と、円筒状のトリガ電極32とが不図示のネジで密着して取り付けられた放電部35が、内径(開口36の直径)が30mmのアノード電極31内に配置され、絶縁碍子33の材質がアルミナ、トリガ電極32とアノード電極31の材質がステンレス製であった。 The vapor deposition source 30 used in the above-described embodiment is attached to a columnar vapor deposition material 34 having a diameter of 10 mm, a disk-shaped insulator 33, and a cylindrical trigger electrode 32 in close contact with screws (not shown). The discharge part 35 was disposed in the anode electrode 31 having an inner diameter (diameter of the opening 36) of 30 mm, the insulator 33 was made of alumina, and the trigger electrode 32 and the anode electrode 31 were made of stainless steel.
また、上記実施例に用いた電源装置41を詳細に説明すると、コンデンサユニット44は1つの容量が2200μF(耐圧:160V)のコンデンサが4つ並列に接続されたものを用い、トリガ電源42はパルストランスからなり、入力200Vのμsのパルス電圧を約17倍に変圧して3.4kV(数μA)極性:プラスを出力するものを用いた。アーク電源43は100V数Aの容量の直流電源であり、トリガ放電を起こす前に100Vで電荷をコンデンサユニット44を充電しておく。コンデンサユニット44を充電するのに約1秒間必要とするので、この電源装置41では8800μFで放電を繰り返す場合の周期は1Hzで行われる。 The power supply device 41 used in the above embodiment will be described in detail. As the capacitor unit 44, one capacitor having a capacitance of 2200 μF (withstand voltage: 160V) is connected in parallel. A transformer composed of a transformer that outputs a positive voltage of 3.4 kV (several μA) by transforming a pulse voltage of 200 μs of μs by about 17 times. The arc power supply 43 is a DC power supply with a capacity of several hundred volts, and charges the capacitor unit 44 with a charge of 100 volts before trigger discharge occurs. Since it takes about 1 second to charge the capacitor unit 44, in this power supply device 41, the cycle when discharging is repeated at 8800 μF is performed at 1 Hz.
トリガ電源42のプラス出力端子をトリガ電極32に接続し、マイナス端子はアーク電源43のマイナス側出力端子と同じ電位に接続し、蒸着材料34に接続させた。アーク電源43のプラス端子はグランド電位に接地させ、アノード電極31に接続させた。コンデンサユニット44の両端子はアーク電源43のプラスおよびマイナス端子間に接続させた。 The positive output terminal of the trigger power source 42 was connected to the trigger electrode 32, the negative terminal was connected to the same potential as the negative side output terminal of the arc power source 43, and the vapor deposition material 34 was connected. The plus terminal of the arc power supply 43 was grounded to the ground potential and connected to the anode electrode 31. Both terminals of the capacitor unit 44 are connected between the positive and negative terminals of the arc power source 43.
真空排気系9はターボ分子ポンプ、バルブ、ロータリポンプとを有し、ターボ分子ポンプからロータリポンプまでは金属製の真空配管で接続され、真空槽2内部を真空排気可能なものを用いた。真空槽2内部には圧力10-5Pa以下の真空雰囲気を形成した。 The evacuation system 9 has a turbo molecular pump, a valve, and a rotary pump. The turbo molecular pump to the rotary pump are connected by a metal vacuum pipe, and the inside of the vacuum chamber 2 can be evacuated. A vacuum atmosphere having a pressure of 10 −5 Pa or less was formed inside the vacuum chamber 2.
以上は、基板11が成膜領域6を通過するときに薄膜が形成される場合について説明したが、本発明はこれに限定されるものではなく、基板11を成膜領域6で静止させて成膜を行ってもよい。 The case where a thin film is formed when the substrate 11 passes through the film formation region 6 has been described above. However, the present invention is not limited to this, and the substrate 11 is made stationary in the film formation region 6. A membrane may be performed.
磁界形成手段50に用いる第一、第二の磁石部材51、52も特に限定されず、対向する第一、第二面53、54に異なる極性の磁極が配置されるのであれば、第一、第二の磁石部材51、52にそれぞれ永久磁石を用いてもよいし、第一、第二の磁石部材51、52にそれぞれ電磁石を用いてもよい。 The first and second magnet members 51 and 52 used for the magnetic field forming means 50 are not particularly limited, and if magnetic poles having different polarities are arranged on the opposing first and second surfaces 53 and 54, the first, Permanent magnets may be used for the second magnet members 51 and 52, respectively, and electromagnets may be used for the first and second magnet members 51 and 52, respectively.
また、第一、第二の磁石部材51、52のいずれか一方を永久磁石で構成し、他方を電磁石で構成してもよい。更に、第一、第二の磁石部材51、52をそれぞれ複数個の単位磁石で構成してもよい。磁界形成手段50は上述したように真空槽2の外部に配置してもよいし、真空槽2の内部に配置してもよい。 Further, either one of the first and second magnet members 51 and 52 may be configured with a permanent magnet, and the other may be configured with an electromagnet. Further, each of the first and second magnet members 51 and 52 may be composed of a plurality of unit magnets. The magnetic field forming means 50 may be disposed outside the vacuum chamber 2 as described above, or may be disposed inside the vacuum chamber 2.
1つの成膜装置1に設ける蒸着源30の数も特に限定されず、2つ以上の蒸着源30を同じ真空槽2に接続してもよい。この場合、各蒸着源30に同じ蒸着材料34を用いれば厚い薄膜が形成されるし、各蒸着源30に異なる種類の蒸着材料34を用いれば、1枚の基板11上に複数種類の膜を積層することができる。 The number of vapor deposition sources 30 provided in one film forming apparatus 1 is not particularly limited, and two or more vapor deposition sources 30 may be connected to the same vacuum chamber 2. In this case, if the same vapor deposition material 34 is used for each vapor deposition source 30, a thick thin film is formed. If different vapor deposition materials 34 are used for each vapor deposition source 30, a plurality of types of films are formed on one substrate 11. Can be stacked.
また、真空槽2にガス供給系を接続し、真空槽2内にガス供給系から蒸着材料34の荷電粒子と反応する反応性ガスを供給して成膜を行えば、蒸着材料と反応ガスの生成物からなる薄膜を形成することができる。 Further, if a gas supply system is connected to the vacuum chamber 2 and a reactive gas that reacts with the charged particles of the vapor deposition material 34 is supplied from the gas supply system to the vacuum chamber 2, film formation is performed. A thin film made of the product can be formed.
本願の成膜装置及び製造方法は、半導体のゲート電極やゲート絶縁膜、半導体のトレンチに形成するバリア層、磁性デバイスの磁性材料の成膜、更に機械部品のコーティング、カーボンナノチューブの触媒層形成等種々の分野に使用することができる。 The film forming apparatus and manufacturing method of the present application include a semiconductor gate electrode, a gate insulating film, a barrier layer formed in a semiconductor trench, a magnetic material for a magnetic device, a coating of mechanical parts, and a carbon nanotube catalyst layer. It can be used in various fields.
1……成膜装置 11……基板 30……蒸着源 32……トリガ電極 34……蒸着材料 36……開口 45……荷電粒子 50……磁界形成手段 DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 11 ... Substrate 30 ... Deposition source 32 ... Trigger electrode 34 ... Deposition material 36 ... Opening 45 ... Charged particle 50 ... Magnetic field formation means
Claims (4)
前記真空槽内に配置された基板に前記荷電粒子を到達させ、前記基板表面に薄膜が形成されるように構成された成膜装置であって、
前記成膜装置は、放出された前記荷電粒子の放出方向とは垂直な一方向に磁力線を形成する磁界形成手段を有する成膜装置。 A vacuum chamber, and a deposition source that discharges charged particles of the deposition material into the vacuum chamber,
A film forming apparatus configured to allow the charged particles to reach a substrate disposed in the vacuum chamber and to form a thin film on the substrate surface;
The film forming apparatus includes a magnetic field forming unit that forms lines of magnetic force in a direction perpendicular to a discharge direction of the discharged charged particles.
前記基板の表面に前記蒸着材料の荷電粒子が到達するように構成された請求項1記載の成膜装置。 Arranging the substrate in the flight direction of electrons emitted from the deposition source and bent by the Lorentz force applied from the magnetic field lines,
The film forming apparatus according to claim 1, wherein the charged particles of the vapor deposition material reach the surface of the substrate.
前記放電部は蒸着材料とトリガ電極とを有し、
前記トリガ電極と前記蒸着材料との間にトリガ放電を発生させると、前記アノード電極と前記蒸着材料との間にアーク放電が誘起され、前記アーク放電によって前記アノード電極と前記蒸着材料の間にアーク電流が流れ、前記蒸着材料から前記荷電粒子が放出され、前記荷電粒子は前記アーク電流が形成する磁界によってその飛行方向が曲げられ、前記アノード電極の開口から前記真空槽内部に放出されるよう構成された請求項1又は請求項2のいずれか1項記載の成膜装置。 The vapor deposition source has a cylindrical anode electrode, and a discharge part disposed inside the anode electrode,
The discharge part has a deposition material and a trigger electrode,
When a trigger discharge is generated between the trigger electrode and the vapor deposition material, an arc discharge is induced between the anode electrode and the vapor deposition material, and the arc discharge causes an arc between the anode electrode and the vapor deposition material. A current flows, the charged particles are emitted from the vapor deposition material, and the charged particles are bent in a flight direction by a magnetic field formed by the arc current, and emitted from the opening of the anode electrode into the vacuum chamber. The film-forming apparatus of any one of Claim 1 or Claim 2.
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JPH07150340A (en) * | 1993-11-29 | 1995-06-13 | Nissin Electric Co Ltd | Thin film forming device |
JP2003321769A (en) * | 2002-04-26 | 2003-11-14 | Ulvac Japan Ltd | Vapor deposition apparatus |
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JPH07150340A (en) * | 1993-11-29 | 1995-06-13 | Nissin Electric Co Ltd | Thin film forming device |
JP2003321769A (en) * | 2002-04-26 | 2003-11-14 | Ulvac Japan Ltd | Vapor deposition apparatus |
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