200922871 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種奈米碳管之製造方法，特別係一 種藉由添加鋁至鐵矽合金催化劑中，使其可在低溫下快速 製造準直性奈米碳管之方法。 【先前技術】 自從奈米礙管被發現以來，有許多研究圑隊一直專 注於奈米碳管的場發射特性，然而奈米碳管的方向性在場 發射特性方面佔有相當重要的地位，如何使奈米碳管垂直 於基本表面方向成長，更是目前重要的課題之一。 現今製備奈米碳管的方法，主要包含電弧放電法 (Arc-discharge )、化學氣相沉積法（Chemical Vap〇r200922871 IX. Description of the Invention: [Technical Field] The present invention relates to a method for producing a carbon nanotube, in particular to a method for rapidly producing a collimation at a low temperature by adding an aluminum to a ferroalloy catalyst. The method of carbon nanotubes. [Prior Art] Since the discovery of nano-obstruction, many research teams have been focusing on the field emission characteristics of carbon nanotubes. However, the directionality of carbon nanotubes plays an important role in the field emission characteristics. It is one of the most important issues to make the carbon nanotubes grow perpendicular to the basic surface. Nowadays, a method for preparing a carbon nanotube mainly includes an arc discharge method (Arc-discharge) and a chemical vapor deposition method (Chemical Vap〇r).
Deposition，CVD )、脈衝雷射蒸鍍（pulsed L隨 Deposition )、電漿輔助化學氣相沉積法（piasma Enhanced CVD )、微波電漿化學氣相沉積法（Micr〇wave朽批咖 CVD )及雷射剝削法（iaser abiatj〇n)等方法。 而在上述方法中，影響奈米碳管製程溫度與成長速 度的原因，主要是在於該催化劑的組成。催化劑的使用是 化學氣相沉積法合成奈米碳管中相當重要的步驟，其主要 功能為催化分解碳氫化合物，及讓碳原子在其中擴散，因 此，催化劑之催化活性會直接影響碳管之成長速率，而催 化劑的催化活性則受控於製程溫度的高低。於習知以 CVD或MPCVD製造奈米碳管的製程中，因所採用之催 化劑皆需較向之催化溫度’使得奈米;6炭管製程溫度皆高於 5 200922871 550°C。 太^程溫度過高，㈣基材之選时受到限制且該 j石厌官之成長亦會受到阻礙，此外，亦會限制奈米碳管 在場發射平面器及積體電路上之應用。因此如何 溫下準直性成長之奈米碳管，則為本發明創作之重點。 【發明内容】 有鑑於習知技術的缺失，本發明之目的係提供一種 ，矽合金催化劑之添加物，以使高準直性之奈米碳^在低 溫下快速成長；同時，所得之奈米碳管石墨層結構完整， 且奈米碳管管徑亦具高均勻性。此外，本發明提供之方法 可輕易融入傳統原有之製程步驟，方便使用者加以應用。 本發明另一目的係提供一種具有奈米碳管之基板。 為達上述目的，本發明係提供一種準直性奈米碳管 之製造方法，其包含下列步驟：0)提供一基板；（b)披覆 一鋁薄膜於前述基板上；（c)彼覆一鐵石夕合金薄膜於前述 銘薄膜上；（d)將前述基板置於化學氣相沉積系統中；及(e) 於前述化學氣相沉積系統中通入含碳氣體及平衡氣體，以 反應生成奈米碳管。 在一較佳實施態樣中，前述步驟（a)之基板係為矽 基板或玻璃基板。 在一較佳實施態樣中，前述步驟（b)之披覆一鋁薄 膜之方法係為濺鍍、化學氣相沉積、物理氣相沉積、電鍍 或壓印。其中前述鋁薄膜厚度較佳係為2〜50 nm，更佳係 為2〜6 nm。 200922871 ，一較佳實施態樣中，前述步驟（C)之披覆— 合金薄膜之方法係為濺鑛、化學氣相沉積、物理氣相沉 ，、電鏡或壓印。其中前述鐵⑪合金薄膜厚度較佳係為 5〜50 nm，但不限於此範圍。 、在一較佳實施態樣中，前述步驟（c)及步驟（d)中 間進一步包含一蝕刻前述鐵矽合金薄膜之步驟。又，前述 钱^步驟使用之氣體較佳係為氫氣、氧氣、氮氣、氨氣或 其混合組成之氣體。又，前述蝕刻步驟係可於化學氣相沉 積糸統中進行。 ^在一較佳實施態樣中，前述步驟（e)之操作溫度較 佳係為370 C〜460。(：。前述化學氣相沉積系統之操作功率 較佳係為500〜15〇〇 W、工作壓力較佳係為1〇〜5〇T〇rr。 在較佳實施態樣中，前述步驟（e)之含；ε炭氣體較 =係為曱烧、乙燒、丙烧、苯或其混合組成之氣體。又， ，，步驟（e)之平衡氣體較佳係為氫氣、氧氣、氮氣、 氨氣或其混合組成之氣體。又，前述步驟（e)之含碳氣 I 體及平衡氣體之流量比值較佳係為1/9〜4/9。又，前述步 驟（e)之化學氣相沉積係為微波電漿辅助化學氣相沉積。 本發明另提供一種具有奈米碳管之基板，其包含、&) 一添加鋁之鐵矽合金薄膜；及(b)成長於前述鐵矽合金薄 膜上’長度為40〜50 nm之奈米碳管。 在一較佳實施態樣中，前述奈米碳管之長度係為 42〜46 nm 〇 本發明將鋁添加入催化劑層中，藉此使奈米碳管在 低溫下快速成長，且藉由本發明製得之奈米碳管，其具有 200922871 尚密度、高準直性、結晶性佳及管徑尺寸均勻之特性。 【實施方式】 本發明係關於一種低溫下快速成長準直性奈米碳管 之製造方法’其藉由將不同厚度之鋁薄膜擴散入鐵矽合金 薄膜之催化劑層中，進而使得催化劑層膨脹且非晶化，因 而促進碳擴散至催化劑層並藉此增快奈米碳管的成長速 率。 第圖係為姓刻鐵梦合金薄膜（未含銘薄膜）後之 TEM剖面f彡像圖，其結果顯示_後僅在催化劑層表面 形成複數之财合金齡及賴氧化後所形成的Fe^顆 粒，且催化劑層厚度從原先24 nm膨脹增加至42 nm，由 此得知，、祕職鐵料金之·結構會變鬆散，因 而厚度增加。第二随為糊_合金細(含2 nm銘薄 膜)後之TEM觸影像圖，其結果顯示侧後催化劑層呈 現非aa尨;，其表面亦會形成複數顆粒，且膨脹程度相較 於未含㈣膜之催化_更加嚴重，由原先％ nm ( 2腹 (Al) + 24 rnn (Fe_Si))膨脹至46 nm，此外，催化劑層平 區域之厚度為18 nm，其相較於未含_膜之催化劑 ^的平坦區域厚度增加了·。再者，由於經由蚀刻後銘 f膜已擴散入鐵梦合金薄膜之催化劑層中，因此第二圖中 無法觀察到鋁薄膜之影像。 第三圖⑷係為餘刻鐵石夕合金薄膜(含2 nm㉟薄膜)後 =ΤΕΜ線性掃描之影像圖，其結果顯示钱刻後2唧之 /專膜το全擴散入鐵石夕合金層中。第三圖⑼係為沿著第 200922871 二圖(A)之直線剖面所標記之成分線性掃描圖，其中橫座 標由左而右係表示距離基板表面之距離。由第三圖（B) 中可得知鋁擴散入鐵矽合金薄膜中深度達35 nm，且在離 石^基板18mn處，鋁的濃度開始增加，而當其到達28nm 時，紹的濃度達到最大值’此外，由圖中亦可得知銘擴散 之範圍係為18〜38 nm。 ’ 因此由第一圖至第三圖可知，本發明藉由一常用蝕 刻步驟，使鋁薄膜以擴散方式進入催化劑層之中，進而達 到添加之效果’而鋁添加之效果可有效使催化劑層之結構 更鬆散，進而提高準直性奈米碳管之成長速度。 此外，本發明之技術即便未經蝕刻步驟其依然可成 ，出奈米碳管，相較於傳統僅含鐵矽合金薄膜之催^劑層 右，經過蝕刻步驟則無法成長出奈米碳管，本發明具有更 顯著之進步，但本發明之技術若經姓刻步驟，則因|呂中介 層$散入鐵矽合金層中，而使鐵矽合金催化劑層之結構更 為鬆散，進而提升準直性奈米碳管之成長速率。 以下係提供利用本發明之實施例，然本實施例並非 用以限定本發明，任何熟悉此技藝者，在不脫離本發明之 精神和範圍内，當可作各種之更動與潤飾，因此，本發明 之保護範圍，當視後附之申請專利範圍所界定者為準 牲奈米碳營之遒倕Deposition, CVD), pulsed laser deposition (pulsed L with Deposition), plasma assisted chemical vapor deposition (piasma Enhanced CVD), microwave plasma chemical vapor deposition (Micr〇wave 1985) and thunder Shooting and stripping method (iaser abiatj〇n) and other methods. In the above method, the reason for affecting the temperature and growth rate of the carbon carbon control process is mainly due to the composition of the catalyst. The use of a catalyst is a very important step in the synthesis of carbon nanotubes by chemical vapor deposition. Its main function is to catalytically decompose hydrocarbons and allow carbon atoms to diffuse therein. Therefore, the catalytic activity of the catalyst directly affects the carbon nanotubes. The growth rate, while the catalytic activity of the catalyst is controlled by the process temperature. In the process of manufacturing carbon nanotubes by CVD or MPCVD, the catalysts used in the process have to be catalyzed by the temperature of the catalyst. The temperature of the carbon nanotubes is higher than 5 200922871 550 ° C. If the temperature of the process is too high, (4) the selection of the substrate is limited and the growth of the stone is also hindered. In addition, the application of the carbon nanotubes to the field emission planarizer and the integrated circuit is also limited. Therefore, how to warm up the collimated carbon nanotubes is the focus of the invention. SUMMARY OF THE INVENTION In view of the deficiencies of the prior art, the object of the present invention is to provide an additive of a ruthenium alloy catalyst to rapidly grow high collimated nanocarbon at a low temperature; at the same time, the obtained nanometer The carbon tube graphite layer structure is complete, and the carbon nanotube diameter is also highly uniform. In addition, the method provided by the present invention can be easily incorporated into the conventional process steps and is convenient for the user to apply. Another object of the present invention is to provide a substrate having a carbon nanotube. In order to achieve the above object, the present invention provides a method for manufacturing a collimated carbon nanotube, comprising the steps of: 0) providing a substrate; (b) coating an aluminum film on the substrate; (c) covering a ferrite alloy film on the foregoing film; (d) placing the substrate in a chemical vapor deposition system; and (e) introducing a carbon-containing gas and a balance gas into the chemical vapor deposition system to generate a reaction Carbon nanotubes. In a preferred embodiment, the substrate of the step (a) is a ruthenium substrate or a glass substrate. In a preferred embodiment, the method of coating an aluminum film of the foregoing step (b) is sputtering, chemical vapor deposition, physical vapor deposition, electroplating or embossing. The thickness of the aluminum film is preferably 2 to 50 nm, more preferably 2 to 6 nm. 200922871, in a preferred embodiment, the method of coating (the alloy film) of the foregoing step (C) is sputtering, chemical vapor deposition, physical vapor deposition, electron mirroring or embossing. The thickness of the iron 11 alloy film is preferably 5 to 50 nm, but is not limited thereto. In a preferred embodiment, the step (c) and the step (d) further comprise the step of etching the foregoing iron-bismuth alloy film. Further, the gas used in the above step is preferably a gas composed of hydrogen, oxygen, nitrogen, ammonia or a mixture thereof. Further, the etching step described above can be carried out in a chemical vapor deposition system. In a preferred embodiment, the operating temperature of the foregoing step (e) is preferably 370 C to 460. (The operating power of the chemical vapor deposition system is preferably 500 to 15 〇〇W, and the working pressure is preferably 1 〇 5 〇 T 〇 rr. In a preferred embodiment, the foregoing step (e) The ε carbon gas is a gas composed of yttrium, sulphur, propylene, benzene or a mixture thereof. Further, the equilibrium gas of step (e) is preferably hydrogen, oxygen, nitrogen, ammonia. a gas composed of a gas or a mixture thereof. Further, the flow ratio of the carbon-containing gas I and the equilibrium gas in the above step (e) is preferably 1/9 to 4/9. Further, the chemical gas phase of the above step (e) The deposition system is a microwave plasma-assisted chemical vapor deposition. The invention further provides a substrate having a carbon nanotube, comprising: & an aluminum-added iron-bismuth alloy film; and (b) growing on the foregoing iron-bismuth alloy A carbon nanotube with a length of 40 to 50 nm on the film. In a preferred embodiment, the length of the carbon nanotubes is 42 to 46 nm. The present invention adds aluminum to the catalyst layer, thereby rapidly growing the carbon nanotubes at a low temperature, and by the present invention. The obtained carbon nanotubes have the characteristics of 200922871 density, high collimation, good crystallinity and uniform pipe diameter. [Embodiment] The present invention relates to a method for producing a rapidly growing collimated carbon nanotube at a low temperature, which is obtained by diffusing an aluminum film of different thickness into a catalyst layer of a ferroalloy film, thereby causing the catalyst layer to expand. Amorphization promotes the diffusion of carbon to the catalyst layer and thereby increases the growth rate of the carbon nanotubes. The figure is a TEM section f彡 image of the engraved iron dream alloy film (not including the film), and the results show that only _ after the formation of a plurality of alloys on the surface of the catalyst layer and the Fe formed after oxidation The particles, and the thickness of the catalyst layer increased from the original 24 nm expansion to 42 nm, and it is known that the structure of the secret iron metal will become loose and the thickness will increase. The TEM image of the second follow-up paste _ alloy fine (including 2 nm Ming film) shows that the side catalyst layer is non-aa 尨; the surface also forms a plurality of particles, and the degree of expansion is compared with Catalysts containing (iv) membranes are more severe, from the original % nm (2 abdomen (Al) + 24 rnn (Fe_Si)) to 46 nm, in addition, the thickness of the flat region of the catalyst layer is 18 nm, which is compared with the absence of _ The thickness of the flat region of the catalyst of the membrane is increased. Further, since the film was diffused into the catalyst layer of the iron dream alloy film after the etching, the image of the aluminum film could not be observed in the second figure. The third figure (4) is the image of the 铁 夕 合金 alloy film (including 2 nm35 film) after the ΤΕΜ linear scan, the results show that the 2 唧 / / film το fully diffused into the iron alloy layer. The third figure (9) is a linear scan of the components marked along the line profile of Fig. 2222871 (A), wherein the abscissa is the distance from the left and right sides to the surface of the substrate. It can be seen from the third figure (B) that the diffusion of aluminum into the iron-bismuth alloy film is as deep as 35 nm, and the concentration of aluminum begins to increase at 18 nm from the substrate, and when it reaches 28 nm, the concentration reaches The maximum value is also shown in the figure. The range of the diffusion is 18 to 38 nm. Therefore, it can be seen from the first to third figures that the present invention allows the aluminum film to diffuse into the catalyst layer by a common etching step, thereby achieving the effect of addition, and the effect of aluminum addition can effectively make the catalyst layer The structure is looser, which in turn increases the growth rate of collimated carbon nanotubes. In addition, the technology of the present invention can be formed without a etching step, and the carbon nanotubes can not grow into carbon nanotubes through the etching step as compared with the conventional catalyst layer containing only the iron-bismuth alloy film. The present invention has a more significant progress, but if the technique of the present invention is carried out by the surname step, the structure of the iron-bismuth alloy catalyst layer is looser and further improved due to the dispersion of the intercalation layer of the iron intercalation layer into the iron-iron alloy layer. The growth rate of collimated carbon nanotubes. The embodiments of the present invention are provided below, and the present invention is not intended to limit the present invention. Any one skilled in the art can make various changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of the invention is defined as the scope of the patent application scope attached to the patent.
利用直流濺鑛機於一矽基材上濺鑛一厚度為2⑽之 200922871 鋁薄膜’以形成Al/Si，其濺鍍條件為：濺鍍功率為 工作虔力為G.G1 Ton*、濺度時間為30秒。接著:、 鍍機漉鍍-厚度為24 nm之鐵石夕合金薄膜(砍 = 16.67:)於前述鋁薄膜上，形成以侧况，其濺鍍C 為.雜功率為50 W、工作勤·· G川如、濺= 分鐘。再將舰Fe-Si/Al/Si置雜波電雜魏學^ 積系統中’通人氫_刻前述鐵發合 作2 為二微波功率:為靖、工作壓力 5为鐘。接著藉由微波電漿加熱前述Fe_si/Ai/si至^ 與氫纽例為4 ^ 9之組合諸，可得到-長 t ίοΤ之t性奈米碳管，其操作條件為··微波功 革為W、工倾力：25如、成長時間為5分鐘。 :施例2: 鋁薄膜） 之: '含 2 nm 外，ΐ它了 氣侧前述鐵發合金薄膜之步驟省略 二同樣之方法製備出另一長度為 -施例 翁薄膜、 之 '含 4 nm ^锻時間為1分鐘，其它係依丨 法製備出另-長度為4_之;^ 照實施例1同樣之方 管 200922871 奈米磋 p 用直流濺鍍機於一矽基材上賤一 1減蘇彼从·* a 7从^>戚Fe-Si/SiUsing a DC splashing machine to sputter a 2,10 thickness of 200922871 aluminum film on a substrate to form Al/Si. The sputtering conditions are: sputtering power is working force G.G1 Ton*, splash The time is 30 seconds. Then: the plating machine is plated with a thickness of 24 nm, and the iron alloy film (cut = 16.67:) is formed on the aluminum film to form a side condition, and the sputtering C is 50 W. The working power is · G Chuan, splashing = minutes. Then the ship Fe-Si/Al/Si is placed in the clutter electric and Wei learning system. The 'passing hydrogen' is engraved with the above iron and iron. 2 is the microwave power: Jing, working pressure is 5 bells. Then, by heating the aforementioned Fe_si/Ai/si to ^ and the hydrogen addition to 4^9 by microwave plasma, a t-nanocarbon tube of -long t ίοΤ can be obtained, and the operating condition is · microwave leather For W, work dedication: 25, and the growth time is 5 minutes. :Example 2: Aluminium film): 'With 2 nm, the step of the iron-based alloy film on the gas side is omitted. The same method is used to prepare another film of the length of the film, which contains 4 nm. ^Forging time is 1 minute, other methods are prepared according to the method of 丨 长度 长度 长度 ; ^ ^ ^ 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009减苏彼从·* a 7 from ^>戚Fe-Si/Si
錢率為5〇 W、工健力為_ Τ。- “ ί ^ ^再將前述^况置於微波電漿輔耳 其操，;為系:1功=:== f ^間為5分鐘。接著藉由微波電漿加熱前述;Fe_Si/S 口 e 〇c，並通入甲烷與氫氣比例為4比9之組合氣體 可得到一長度為13#m之傳統準直性奈米碳管，其操β 條件為：微波功率為5〇〇w、工作壓力：25T〇rr、 間為5分鐘。 ' &較例-1-1^經餘刻步驟之傳統準亩性奈米碳管之舉借 __(不含 除了將通入氫氣蝕刻前述鐵矽合金薄膜之步驟省略 外’其它係依照比較例丨同樣之方法製備，但僅獲得熱分 解碳沉積’無法製備出奈米碳管。 將前述利用本發明之方法製得及傳統方法之準直性 奈米碳管進行分析比較，其結果如下所述： 第四圖(A)係為比較例1之奈米碳管之SEM剖面影像 11 200922871 圖，第四圖(B)則係為實施例i之奈米碳管之SEM剖面影 像圖，其結果顯示，實施例丨之奈米碳管相較於比較例1 之奈米碳管有較好之準直性。 第五圖(A)係為比較例2奈米碳管之sem剖面影像 圖，其結果顯示若不經侧步驟，只蒸鑛鐵石夕合金薄膜做 催化劑時’其奈米礙管無法成長。第五圖⑼係為實施例2 奈米碳管之SEM剖面影像圖，由圖中結果得知，當相較 於比較例2夕蒸鍍―紹薄膜後，即便未經射彳步驟，其依 然可成長出-長度為13//m之奈米碳管，而所獲得之長 度相當於奈米碳管成長於經侧後之财合金催化劑声 上所獲得之長度。由此可知，經本發明添域至鐵石夕合金 in無論是否麵行射_，她於傳統製備方 法’本發月之方法皆可製得品質更佳之準直性奈米碳管。 Φ夕所f ’本發明藉由將辦介層擴散人催化劑層 ’進而使得催化劑層膨脹且非晶化，藉此增快奈 米故^在低溫的成長速率，由傳 不 的成長速率增加至8.4/m/m==^ 2.6㈣/她 ί發明之製程所製得之奈米碳管具有高均勾性此t密， 门+直性且“工尺寸均勻、結日日日性佳之性質。 其它實施態樣 ，有揭露於本發明書之特徵係可 二;==之等= 明書所揭露之特徵係為一系列相等或相似二:的亡： 200922871 實施例。 此外，依據本說明書揭露之内容，熟悉本技術領域 者係可輕易依據本發明之基本特徵，在不脫離本發明之 精神與範圍内，針對不同使用方法與情況作適當改變與 修飾，因此，其它實施態樣亦包含於申請專利範圍中。 13 200922871 【圈式簡單說明】 剖面影像圖 Ο " 膜(含2 nm铭薄膜)後之 弟一圖係為钱刻鐵石夕合今壤 丽剖㈣彡制。 薄膜(含2nm鋁薄膜)後 第二圖(A)係為餘刻鐵碎合金 之STEM線性掃描之影像圖。The money rate is 5〇W, and the workforce is _ Τ. - " ί ^ ^ then place the above conditions in the microwave plasma auxiliary ear; for the system: 1 work =: == f ^ is 5 minutes. Then the microwave is used to heat the aforementioned; Fe_Si / S mouth e 〇c, and a combination of methane and hydrogen with a ratio of 4 to 9 can be used to obtain a conventional collimated carbon nanotube with a length of 13#m. The condition of β is: microwave power is 5〇〇w, Working pressure: 25T 〇rr, between 5 minutes. ' & Comparative Example - 1-1 ^ The traditional quasi-acre carbon nanotubes of the remaining steps are borrowed __ (excluding the addition of hydrogen into the aforementioned The steps of the iron-bismuth alloy film are omitted except that the other system is prepared in the same manner as the comparative example, but only the thermal decomposition carbon deposition is obtained, and the carbon nanotube cannot be prepared. The above-mentioned method using the method of the present invention and the conventional method are used. Straight carbon nanotubes were analyzed and compared, and the results are as follows: The fourth graph (A) is the SEM cross-sectional image of the carbon nanotube of Comparative Example 1 11 200922871, and the fourth graph (B) is implemented. The SEM cross-sectional image of the carbon nanotube of Example i shows that the carbon nanotube of the example is better than the carbon nanotube of Comparative Example 1. The fifth figure (A) is the sem cross-sectional image of the carbon nanotube of Comparative Example 2. The results show that if the iron ore alloy film is used as a catalyst without the side step, its nanoscopic obstruction The fifth graph (9) is the SEM cross-sectional image of the carbon nanotube of Example 2. It is known from the results of the graph that when the film is vapor-deposited compared with the comparative example 2, even if the film is not shot. It can still grow into a carbon nanotube with a length of 13/m, and the length obtained is equivalent to the length obtained by the sound of the carbon nanotube catalyst grown on the side of the carbon nanotube. According to the invention, the addition of the domain to the iron-stone alloy in no matter whether or not it is sprayed _, she can produce a better quality collimated carbon nanotube in the traditional preparation method 'this month's method. Φ 夕The catalyst layer is diffused and amorphized by the diffusion of the human catalyst layer, thereby increasing the growth rate of the nanometer at a low temperature, and increasing the growth rate from the transmission to 8.4/m/m==^ 2.6 (four) / her ί in the process of manufacturing the carbon nanotubes have a high uniformity of this t-tight, door + straightness "The size of the work is uniform and the day and day are good. Other implementations, there are features disclosed in the book of the invention can be two; == etc. = The characteristics disclosed in the book are a series of equal or similar two: In addition, in accordance with the disclosure of the present specification, those skilled in the art can easily adapt to the basic features of the present invention and appropriately adapt to different methods and situations without departing from the spirit and scope of the present invention. Changes and modifications, therefore, other implementations are also included in the scope of the patent application. 13 200922871 [Simple description of the circle] Cross-sectional image Ο " Membrane (including 2 nm Ming film) after the brother of a picture is the money carved stone Xihe today's Lili section (4). After the film (including 2nm aluminum film), the second figure (A) is an image of the STEM linear scan of the residual iron alloy.
第二圖出)係為沿著第三圖⑷之直線剖面所標記的 成分線性掃描圖。The second figure shows a linear scan of the composition marked along the line profile of the third figure (4).
第四圖(A)係為比較例1之奈米碳管之SEM剖面影像 第四圖(B)係為實施例1之奈米碳管之s EM剖面影像 圖0 第五圖(A)係為比較例2基板上熱分解碳沉積之SEm 剖面影像圖。 第五圖(B)係為實施例2奈米碳管之SEM剖面影像 圖。 【主要元件符號說明】 無 14The fourth graph (A) is the SEM cross-sectional image of the carbon nanotube of Comparative Example 1. The fourth graph (B) is the SEM image of the carbon nanotube of the first embodiment. FIG. 5 (A) The SEm profile image of the thermal decomposition carbon deposition on the substrate of Comparative Example 2. Fig. 5(B) is a SEM cross-sectional image of the carbon nanotube of Example 2. [Main component symbol description] None 14