200920704 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種形成於脆性材料基板端面上之邊緣 4 ( &線）之去角方法’更詳細而言本發明係關於—種使 沿著邊緣線形成之去角加玉面之⑽縮小，更佳為形成平 坦加工面之去角方法。 【先前技術】 玻璃基板等脆性材料基板藉由加工成所需尺寸、形狀 而應用於各種產品t。通常，脆性材料基板之加工藉由切 害^砂輪劃線、雷射劃線等既有之加工技術實行，但藉由 玄等加工技術分割之基板端面之邊緣線非常鋒利，即使僅 文到略微衝擊亦會產味届斗， B座生砰屑或微裂痕等不良狀況。例如， 平板顯示器（FPD，flatpaneldisplay)用之玻璃基板，由 於邊緣缺口而產生之碎片成為㈣卿用基板表面的原 因，從而對產品良率造成影響。 因此，為了防止分割基板後所產生之基板之邊緣部分 之缺口等而沿著邊緣線實施去角加工。 以往之種纟角加工係—面供應大量的水一面利用金 1石磨石進行研磨之濕式研磨法。，然❿，於利用濕式研磨 去所形成之去角加面上’殘存著連續性微小裂痕，導致 去角加工面之強度顯著低於周圍。 因此，有藉由沿著邊緣線照射雷射光束進行加熱溶融 “進仃去角之加熱熔融法之提案。例如有揭示在使玻璃構 5 200920704 件整體保持為高於常溫之溫度（餘熱）之狀態下，對稜線 部附近進行雷射加熱’使稜線部軟化變圓，藉此進行去角 之方法（參照專利文獻1)。 圖9係表示使用c〇2雷射光源並藉由加熱熔融進行去 角加工時之雷射照射狀態之剖面圖。事先使用未圖示之加 熱器’將玻璃基板10整體緩慢加熱至低於軟化溫度之特 定溫度’繼而沿著保持為特定溫度之玻璃基板1〇之欲進 ( 仃去角加工之邊緣線5 1，照射來自C〇2雷射光源50之雷 、射光。此時，藉由調節雷射輸出、掃描速度，使經雷射照 射之邊緣部分達到高溫而軟化，藉此加工成經雷射照射之 邊緣部分呈現圓弧狀。 於此情形下，預熱、加工後之冷卻需要消耗時間。又， 必須預熱整個基板，當無法加熱之裝置或感測器等的功能 膜已形成於基板上時，有時便無法利用該方法實施去角加 工。又，若餘熱不充分，則會因熱應力而導致出現破裂（裂 痕），故無法進行良好的去角加工。進而，加熱熔融之去 I 角加工，有時熔融部分會產生變形，使其一部分（呈圓弧 部分之一部分）膨起高於周圍，導致基板端面之平坦度受 損。 另一方面’以雷射照射加熱熔融以外之去角方法，有 揭示雷射劃線法，係藉由對邊緣附近照射雷射光進行加熱 而使玻璃基板10上產生裂痕，並藉由使雷射光相對地沿 邊緣線方向上進行掃描而使裂痕沿著邊緣線成長，且藉由 自玻璃基板上分離邊緣附近來進行去角（專利文獻2 200920704 圖1 〇係表示使用C〇2雷射光源並藉由雷射劃線進行 去角加工時之雷射照射狀態之圖。對玻璃基板1 〇之邊緣 線5 1附近局部照射來自c〇2雷射光源50之雷射光，且以 低於軟化溫度之溫度進行加熱。此時’伴隨局部熱膨脹之 熱應力產生裂痕5 2。接著’藉由沿著邊緣線5 1掃描雷射 光，使得依次產生之裂痕52沿著邊緣線51成長，故將含 邊緣線5 1之邊緣附近（角部分）分離。 根據專利文獻2，藉由利用雷射劃線進行去角加工， 可實施不會損害玻璃基板之精度且生產率較高及無需清洗 步驟之去角加工。 【專利文獻1】曰本特開平2-241684號公報 【專利文獻2】日本特開平9-225665號公報 【發明内容】 然而’利用雷射照射進行玻璃基板之去角加工時，係 f 使用玻璃基板能夠吸收之波帶之雷射光源。通常玻璃材料 V 雖因蘇打玻璃系、石英玻璃系等種類不同而略有差異，但 若為波帶2 //m〜10.6 ( 10.6以爪為c〇2雷射之波 長）之雷射便能夠吸收。然而，實際上用於去角加工之雷 射光源，不論加熱熔融、雷射劃線均使用c〇2雷射。 其原因在於：去角加工係加工基板端面（表面）之邊 緣線者，一般認為當沿著邊緣線照射雷射進行加熱時，使 用最能被邊緣部分吸收之波長之雷射光較佳。即一般認為 由於c〇2雷射之波長（10·6 ym)相對於玻璃吸收率較 200920704 尚，其於坡璃基板之表面附近幾乎均被吸收（稱為表面吸 收因此與其他雷射光相比’可高效率地加熱表面附近， 故適於去角加工。 c〇2雷射以外之特殊雷射，有時可因研究目的而用於 去角加工，但實際上於玻璃基板之去角加工用途中尚未應 用特殊雷射。例如，主要用作醫療用雷射之Er : YAG雷 射（波長 2.94 "m) 、Ho: YAG 雷射（波長 2〇9 #m) 等雖為玻璃材料可吸收之波帶之雷射光源，但玻璃基板對 於該等雷射波長之吸收率小於c〇2雷射’其結果，若照射 至玻璃基板，則自基板表面至基板内部會被連續吸收（稱 為内部吸收）。此種產生内部吸收之波長之雷射光源，如 同利用雷射劃線分割厚板玻璃時，存在用於使裂痕自基板 表面朝向基板内部深入延伸而分割基板時之可能性。即， 在利用内部吸收對厚板玻璃表面至厚板玻璃内部進行深入 加熱，亚使熱應力分布形成至厚板玻璃之内部深處，藉此 使裂痕由表面深入延伸至内部時甚有效果。然而，一般認 為於去角加工中，如上所述，僅被表面附近吸收之波長之 2射光進行去角加工部分之加熱效率較#，故並^特 意棄C〇2雷射不用而改用特殊雷射之理由，故主要皆使用 C〇2雷射。進而，上述醫療用之Er: YAG雷射（波長2# 或Ho·· YAG雷射（波長2〜m)，輸出功率為η 至10 W左右，即使將醫療用雷射直接轉用於去角加工亦 存在輸出不充分之問題，因此就雷射輸出之觀點而言，亦 無棄C〇2雷射不用而改用特殊雷射之理由。 200920704 且事實上，藉由以c〇2雷射用作光源之雷射劃線之 去角加工，亦已可實現一定程度之去角加工。 然而’近年來’於平板顯示器（FPD)用玻璃基板等 t，使用比先前大型之玻璃基板，故伴隨玻璃基板之大型 化丄對於基板之加工品質亦要求比目前為止更高之精度或 可靠性。其次，對於藉由去角加工而形成之加工面形狀亦 要求比目前為止更高之精度或可靠性。 此處，就藉由雷射劃線之去角加工而形成之加工面進 行說明。圖U係藉由使用叫雷射之雷射劃線進行去角 加工時之加工剖面之放大圖。 藉由去角加工，玻璃基板10之角部分ϋ被分離（剥 離）’玻璃基板10之邊緣線53與角部分卜併消失，但 形成新的去角加工面5 4。 觀察該去角加工面54之剖面形狀，其於玻璃基板10 側具有凹陷之圓狐取业 ,& ^ 开乂狀。去角加工面5 4凹陷之結果會 於玻璃基板s之與基板表面55、56交又部分形成2條邊 :、、 8 4等邊緣線57、58與最初之邊緣線μ相比， 邊緣之鋒利度雖ρ Μ , 文口 ’但右凹陷變大亦會形成鋒利之邊 緣。 平板顯示器用（FPD用）玻璃基板，可能於邊緣線W、 TAB (Tape Automated Bonding > ^ 狀自動化黏合）捲溫 .. , 捲▼，而於去角加工後，若該部分殘存有 埝緣則ΤΑΒ捲帶斷線之可能性變高。 因此’被要求去角加工為儘可能使去角加工面54之凹 200920704 陷為較小形狀，且不形成鋒利的邊緣。 然而，於藉由使用以往之r 卜 〇2雷射之雷射劃線形成之 去角加工面54無論如何均舍姦 ，▲一 產生凹陷。即使改變照射至 攻、毒線53之雷射之照射方向， 控制去角加工面之形狀。 一果亦大致相同’難以 因此本發明之I目的在於提供—種改良雷射割線之 角加工方法，可使雷射劃線時所形成之去角加工面之凹 陷變小，更佳為可使所形成之丰& / 法。 ^成之去角加工面平坦之去角方 工 工 · XM. '冉 面之形狀平坦化，而且亦可批 刀J控制加工面形狀之去备 法。 丹 為解決上述課題而為之本發明之脆性材料基板之去角 方：’其係藉由沿著脆性材料基板之邊緣線掃描雷射光而 進行上述邊緣線之去角加工的脆性材料基板之去角方法， 其特徵在於：使用對於上述脆性材料基板之吸收率為〇.〇5 〜0.95之波長之雷射光源，以入射至上述邊緣線附近之方 式照射雷射光’並藉由分布於邊緣線至基板内部之雷射光 ^收區域’而於基板内部形成溫度分布，且利用因該溫度 刀布而生成於基板内部之熱應力分布，使裂痕延伸，並且 調節裂痕之延伸方向。 此處，所謂「脆性材料基板」，除玻璃基板以外，還 包3石央、單晶石夕、藍寶石、半導體晶圓、陶究等基板。 所明「對於脆性材料基板之吸收率為0.05〜〇·95之波 10 200920704 長之雷射光源」’若就功能面說明，係指除僅在基板表面 附近被吸收（表面吸收）之波長之雷射光源，以及基板幾 乎不吸收之波長之雷射光源以外的雷射光源；使在將雷射 光照射至基板上時，吸收雷射光（内部吸收）之雷射光吸 收區域分布於基板表面附近（亦包含邊緣線）至基板内部 之波長之雷射光源。具體而言’於玻璃基板之情形時，由 於C02雷射或CO雷射（波長5.3 /zm)之吸收率大於0.95， 故自此處使用之去角加工用雷射光源中被排除。因脆性材 料基板之種類不同，較佳之波帶亦不同，於玻璃基板之情 形時，較佳為2 // m〜5 // m波帶之雷射光源。 根據本發明，使用產生内部吸收而非表面吸收之波長 之雷射光源’作為去角加工用之雷射光源，並照射來自該 雷射光源之雷射光使其自邊緣線附近入射。此時，自基板 表面至基板内部’雷射光通過之區域成為雷射光吸收區 域’雷射光吸收區域内之各點吸收所被照射之雷射光而發 熱。即’雷射光吸收區域之各點成為分布於邊緣線至基板 内部之熱源並發熱’並使熱量傳遞至周圍。其結果，對應 於雷射光吸收區域形狀而形成線形、面狀或立體狀熱源（即 並非點狀熱源或基板表面上之熱源），且被加熱時之溫度 分布產生於基板内部’進而可獲得因該溫度分布而產生之 熱應力分布。此時之溫度分布或熱應力分布與使用僅產生 表面吸收之波長之雷射光源（例如對應玻璃基板之C02雷 射光源）進行加熱之情形不同。其次，藉由控制内部吸收 所產生之熱應力分布場（尤其拉伸應力）而使裂痕成長， 11 200920704 並且不僅使裂痕成長且可調節裂痕之延伸方向（具體例隨 後描述），藉此調節去角加工面之形狀。 根據本發明，由於並非使用僅產生表面吸收之波長之 雷射光源進行加熱，而是使用產生内部吸收之波長之雷射 光源，對邊緣、線至基板内部進行加#，並控制在匕時之熱應 力刀布’使裂痕延伸’並且調節延伸方向，藉此調節去角 加工面之形狀，因此可使去角加工面之形狀根據熱應力分200920704 IX. Description of the Invention: [Technical Field] The present invention relates to a method for removing an edge 4 ( & line) formed on an end surface of a substrate of a brittle material. More specifically, the present invention relates to The chamfer formed along the edge line is reduced by the (10) of the jade surface, and more preferably the method of forming the flat surface. [Prior Art] A brittle material substrate such as a glass substrate is applied to various products t by processing into a desired size and shape. Generally, the processing of the brittle material substrate is carried out by the existing processing techniques such as cutting the wheel marking, laser marking, etc., but the edge line of the substrate end surface divided by the metamorphism processing technique is very sharp, even if only slightly The impact will also produce a taste, and the B seat will produce defects such as swarf or micro-cracks. For example, in a glass substrate for a flat panel display (FPD), the chip generated by the edge notch is the cause of the surface of the substrate for the wafer, thereby affecting the yield of the product. Therefore, the chamfering is performed along the edge line in order to prevent the notch or the like of the edge portion of the substrate which is generated after the substrate is divided. In the past, the horn processing system was a wet grinding method in which a large amount of water was supplied while grinding with gold 1 stone. Then, in the use of wet grinding to remove the formed chamfering surface, there are residual micro-cracks, resulting in the strength of the chamfered surface being significantly lower than the surrounding. Therefore, there is a proposal to heat-melt the heating and melting method by irradiating a laser beam along an edge line. For example, it is disclosed that the glass structure 5 200920704 is maintained at a temperature higher than a normal temperature (remaining heat). In the state, laser heating is performed on the vicinity of the ridge portion to soften and round the ridge portion, thereby performing the method of chamfering (see Patent Document 1). Fig. 9 shows the use of a c〇2 laser light source and melting by heating. A cross-sectional view of the laser irradiation state at the time of the chamfering process. The heater substrate (not shown) is used to slowly heat the entire glass substrate 10 to a specific temperature lower than the softening temperature, and then along the glass substrate which is maintained at a specific temperature. The desire to enter (the edge line 5 of the 仃 angle processing illuminates the thunder and the illuminating light from the C 〇 2 laser source 50. At this time, by adjusting the laser output and the scanning speed, the edge portion of the laser irradiation is achieved. It is softened at a high temperature, and the edge portion processed by the laser irradiation is in an arc shape. In this case, the preheating and cooling after processing take time. Also, the entire substrate must be preheated. When a functional film such as a heating device or a sensor is formed on a substrate, it may not be possible to carry out the chamfering process by this method. Further, if the residual heat is insufficient, cracking (cracking) may occur due to thermal stress. Therefore, it is impossible to perform a good chamfering process. Further, when the heat is melted and the I corner is processed, the molten portion may be deformed, and a part thereof (in a portion of the circular arc portion) is swollen higher than the periphery, resulting in flatness of the end surface of the substrate. On the other hand, the method of removing the angle of heating and melting by laser irradiation reveals that the laser scribing method causes cracks on the glass substrate 10 by heating the laser light irradiated near the edge, and borrows The crack is grown along the edge line by scanning the laser light relatively in the edge line direction, and the chamfer is performed by separating the edge from the glass substrate (Patent Document 2 200920704 Fig. 1 shows that the use of C〇2 A laser light source and a laser irradiation state when performing deangulation by laser scribing. Partial illumination of the vicinity of the edge line 5 1 of the glass substrate 1 from the c〇2 laser light source 50 The laser light is heated at a temperature lower than the softening temperature. At this time, the thermal stress accompanying the local thermal expansion generates a crack 52. Then, by scanning the laser light along the edge line 51, the crack 52 sequentially generated is along Since the edge line 51 grows, the vicinity of the edge (corner portion) including the edge line 51 is separated. According to Patent Document 2, by performing the chamfering process using the laser scribe line, it is possible to carry out the accuracy without impairing the glass substrate and the productivity is higher. In the case of a glass substrate which is irradiated by laser irradiation, the present invention is disclosed in the Japanese Patent Application Laid-Open No. Hei 9-225665. In the case of the chamfering process, the laser light source that the glass substrate can absorb is used. Usually, the glass material V is slightly different depending on the type of the soda glass system or the quartz glass system, but if it is a wave band 2 // A laser with m~10.6 (10.6 with a claw as the wavelength of c〇2 laser) can absorb. However, in practice, the laser source used for the chamfering process uses a c〇2 laser regardless of the heating and melting and the laser scribing. The reason for this is that, in the case where the edge processing is to process the edge line of the end surface (surface) of the substrate, it is generally considered that when the laser is irradiated along the edge line for heating, it is preferable to use the laser light of the wavelength which is most absorbed by the edge portion. That is, it is generally considered that since the wavelength of the c〇2 laser (10·6 ym) is higher than that of 200920704, it is almost absorbed near the surface of the glass substrate (referred to as surface absorption and thus compared with other laser light). 'It can be heated to the vicinity of the surface with high efficiency, so it is suitable for chamfering. Special lasers other than c〇2 lasers can sometimes be used for cornering processing for research purposes, but actually are used for cornering of glass substrates. Special lasers have not been used in applications. For example, Er: YAG lasers (wavelength 2.94 "m) and Ho:YAG lasers (wavelength 2〇9 #m), which are mainly used for medical lasers, are glass materials. A laser source that absorbs the band, but the absorption rate of the glass substrate for the laser wavelength is less than c〇2 laser'. As a result, if it is irradiated to the glass substrate, it will be continuously absorbed from the surface of the substrate to the inside of the substrate (called For the internal absorption), such a laser light source that generates a wavelength of internal absorption is likely to be used when the thick glass is divided by the laser scribe line, and the crack is formed to extend the crack from the substrate surface toward the inside of the substrate to divide the substrate. which is, The internal absorption is used to deeply heat the surface of the thick glass to the inside of the thick glass, and the thermal stress distribution is formed deep inside the thick glass, so that the crack is very effective when the surface extends deep into the interior. However, generally It is considered that in the chamfering process, as described above, the heating efficiency of the deangulated portion of the light emitted by only the wavelength absorbed near the surface is higher than #, so that the C〇2 laser is not used and the special laser is used instead. For the reason, the C〇2 laser is mainly used. Further, the above-mentioned Er: YAG laser for medical use (wavelength 2# or Ho··YAG laser (wavelength 2 to m), the output power is about η to 10 W, Even if the medical laser is directly transferred to the cornering processing, there is a problem that the output is insufficient. Therefore, from the viewpoint of the laser output, there is no reason to use the special laser instead of the C〇2 laser. In fact, a certain degree of chamfering can be achieved by the chamfering process of the laser scribe line using the c〇2 laser as a light source. However, 'in recent years' is a glass substrate for flat panel display (FPD). Wait t, use a larger glass than before Since the glass substrate is enlarged, the processing quality of the substrate is required to have higher precision or reliability than the conventional one. Secondly, the shape of the processed surface formed by the chamfering process is required to be higher than the current one. Accuracy or reliability. Here, the processing surface formed by the laser scribing process is described. Fig. U is a processing profile when the chamfering process is performed by using a laser ray line called laser An enlarged view. By cornering, the corner portion of the glass substrate 10 is separated (peeled). The edge line 53 of the glass substrate 10 and the corner portion disappear and disappear, but a new chamfered surface 51 is formed. The cross-sectional shape of the chamfered working surface 54 is a rounded fox stalk having a depression on the side of the glass substrate 10, & As a result of the recessed surface 51, the edges of the glass substrate s and the substrate surfaces 55, 56 are formed into two sides: , , and the edge lines 57 and 58 of the 8 4 are sharper than the initial edge line μ. Although the degree is ρ Μ , Wenkou 'but the right sag becomes larger and will form a sharp edge. For a flat panel display (for FPD) glass substrate, it may be on the edge line W, TAB (Tape Automated Bonding), and the volume of the roll, after the cornering process, if there is a residual edge in the part Then the possibility of the coil being broken is high. Therefore, it is required to be chamfered so as to make the concave corner of the chamfered working surface 54 as small as possible, and does not form a sharp edge. However, the chamfered surface 54 formed by the laser scribing using the conventional r 卜 2 laser is in any case smeared, ▲ a dent. Even if the direction of illumination of the laser that is irradiated to the attack and poison line 53 is changed, the shape of the chamfered surface is controlled. The effect of the present invention is substantially the same. It is difficult to provide an angle processing method for improving the laser cutting line, which can make the depression of the chamfered surface formed by laser scribing smaller, and more preferably The resulting abundance & / method. ^The corner of the machined surface is flattened. ·XM. 'The shape of the surface is flattened, and the shape of the machined surface can be controlled by the knife J. In order to solve the above problems, Dan is the chamfering surface of the brittle material substrate of the present invention: 'the brittle material substrate which is subjected to the chamfering processing of the edge line by scanning the laser light along the edge line of the brittle material substrate An angle method, characterized in that a laser light source having a wavelength of 〇. 〇 5 to 0.95 for the above-mentioned brittle material substrate is irradiated with laser light in such a manner as to be incident on the vicinity of the edge line and distributed by the edge line A laser light distribution region is formed inside the substrate to form a temperature distribution inside the substrate, and a thermal stress distribution generated inside the substrate due to the temperature of the blade is used to extend the crack and adjust the direction in which the crack extends. Here, the "brittle material substrate" includes, in addition to the glass substrate, a substrate such as a stone core, a single crystal stone, a sapphire, a semiconductor wafer, or a ceramic substrate. It is to be noted that "the absorption rate of the substrate of the brittle material is 0.05 to 〇·95, and the laser source of the length of 200920704", as described in the functional surface, means that the wavelength is absorbed (surface absorption) only in the vicinity of the surface of the substrate. a laser light source and a laser light source other than a laser light source having a wavelength that the substrate hardly absorbs; when the laser light is irradiated onto the substrate, the laser light absorbing region that absorbs the laser light (internal absorption) is distributed near the surface of the substrate ( A laser source that also includes the edge line) to the wavelength inside the substrate. Specifically, in the case of a glass substrate, since the absorption rate of the CO 2 laser or the CO laser (wavelength 5.3 /zm) is more than 0.95, the laser light source for use in the chamfering process used herein is excluded. The preferred wavelength band is different depending on the type of the brittle material substrate, and is preferably a laser source of 2 // m to 5 // m band in the case of the glass substrate. According to the present invention, a laser light source 'which produces a wavelength of internal absorption rather than surface absorption is used as a laser light source for chamfering, and laser light from the laser light source is irradiated to be incident from the vicinity of the edge line. At this time, from the surface of the substrate to the inside of the substrate, the region through which the laser light passes is the laser light absorbing region. Each point in the laser light absorbing region absorbs the irradiated laser light and generates heat. That is, each point of the laser light absorbing region becomes a heat source distributed between the edge line and the inside of the substrate and generates heat and transfers heat to the surroundings. As a result, a linear, planar, or three-dimensional heat source (i.e., not a point heat source or a heat source on the surface of the substrate) is formed corresponding to the shape of the laser light absorbing region, and a temperature distribution when heated is generated inside the substrate. The thermal stress distribution generated by this temperature distribution. The temperature distribution or thermal stress distribution at this time is different from the case where a laser light source (e.g., a C02 laser light source corresponding to a glass substrate) that generates only the wavelength of surface absorption is used for heating. Secondly, the crack is grown by controlling the thermal stress distribution field (especially the tensile stress) generated by internal absorption, 11 200920704 and not only allows the crack to grow and can adjust the direction of the crack extension (detailed by a specific example), thereby adjusting The shape of the angled working surface. According to the present invention, since the laser light source that does not only generate the wavelength of the surface absorption is used for heating, but the laser light source that generates the wavelength of internal absorption is used, the edge and the line are added to the inside of the substrate, and the control is performed at the time of the 匕. The thermal stress knife cloth 'extends the crack' and adjusts the extending direction, thereby adjusting the shape of the chamfered working surface, so that the shape of the chamfered working surface can be divided according to thermal stress
布（拉伸應力）之形狀而改變’且可藉由使熱應力分布（拉 伸應力）成為適當之形狀’而使去角加工面成為凹陷較小 之形狀，甚至平坦之形狀。 於上述發明中，較佳為使雷射光自上述邊緣線朝向基 板内部沿斜向入射。· 藉此，自邊緣線朝向基板内部沿斜向入射之雷射光於 基板内部幾乎完全被吸收，故可高效地進行加熱。 於上述發明中，可使雷射光自上述邊緣線朝向基板内 部平直入射，形成線形之雷射光吸收區域。 藉此彳集中對較細之雷射光吸收區域進行力口熱，使 熱應力分布集中，因此可易於調節裂痕之延伸方向。 於上述發明中，脆性材料基板可為玻璃系材料，且雷 射光源可為Er:YAG雷射、H〇:YAG雷射、&光纖雷射、The shape of the cloth (tensile stress) is changed 'and the thermal stress distribution (tensile stress) can be made into an appropriate shape', so that the chamfered surface becomes a shape having a small depression or even a flat shape. In the above invention, it is preferable that the laser light is incident obliquely from the edge line toward the inside of the substrate. In this way, the laser light incident obliquely from the edge line toward the inside of the substrate is almost completely absorbed inside the substrate, so that heating can be performed efficiently. In the above invention, the laser light can be incident straight from the edge line toward the inside of the substrate to form a linear laser light absorbing region. In this way, concentrated heat is applied to the finer laser light absorbing region to concentrate the thermal stress distribution, so that the direction in which the crack extends can be easily adjusted. In the above invention, the brittle material substrate may be a glass-based material, and the laser light source may be Er:YAG laser, H〇:YAG laser, & fiber laser,
Ho光纖田身士、半導體雷射、光參數振盪而產生之波長轉換 光源中之任一者。 ' 由於可以Er:YAG雷射照射波長g 2 94 pm之雷射光， 以Ho: YAG雷射照射波長為2〇9 _之雷射光，因此可 12 200920704 藉由使用該等雷射光源產生内部吸收，而獲得凹陷較小之 去角加工面。再者，該等雷射目前為止作為醫療用途，主 要使用輸出功率較小（1GW以下）者，但於去角加工用途 中’係使用輸出功率較大（例％ 1〇 w〜2〇〇 w)之雷射光 於上述發明中，可於夾邊緣線之兩側基板面上，於邊 緣線附近的位置分別形成與上述邊緣線平行之初 線。 稭由以此等初始龜裂線為裂痕延伸起點，可更精確地 控制形成裂痕之位置。 一於上述發明中，可使初始龜裂線之龜裂剖面形狀為龜 表鈾&在接近邊緣線方向傾斜之傾斜龜裂。 糟此，形成於基板表面上之裂痕成為傾斜方向，且往 去角加工面之方向靠近’因此可藉由熱應力分布場（拉伸 應力）更精確地控制裂痕之延伸方向。 此處傾斜龜裂可藉由將刀刃稜線左右非對稱之刀輪壓 接於基板表面而形成。 又，傾斜龜裂可藉由相對於基板表面為傾斜方向之雷 射照射之消熔加工而形成。 田 ^藉由將具有非對稱刀刃之刀輪垂直按壓於基板上，可 形成龜裂刖端相對基板表面朝向傾斜方向之裂痕。又，由 於使光束直徑縮小之高輸出雷射（例如YAG雷射）沿斜 向照射基板表面，故不會形成裂痕並可利用消熔加工（但 以不會被分割程度之強度）而形成傾斜龜裂。因此’以藉 13 200920704 可精確地控制 由該等加工方法而形成之傾斜龜裂為起點 裂痕之形成位置或裂痕之延伸方向。 【實施方式】 以下，使用圖式就本發明之實施形態進行說明。再者， ¥然本發明並不限定於以下說明之眚始报舎t 卜。兄月之貫施形悲，於不脫離本 發明主旨之範圍内亦包含各種形態。 圖1係表示本發明第一實施形態之脆性材料基板之去 角加工方法的圖。圖2係表示圖1之α-α·剖面之圖。於與 玻璃基板1G之需要進行去角加卫之邊緣線u相對向之;立 置，配置Er: YAG雷射光源20(以後稱為扮雷射光源2〇 ), 且使雷射光自基板之邊緣線u朝向基板内部傾斜入射。 繼之，使玻璃基板10相對雷射光源2〇進行相對移動，使 得雷射光沿著邊緣線1丨進行掃描。具體而言，係使用以 移動玻璃基板10之位置之平台驅動機構（未圖示）作動 進行掃描。或者，亦可固定玻璃基板1〇之位置，藉由如 機械臂等移動機構使雷射光源2〇移動。 就雷射光之光束形狀而言，可使雷射光直線狀進行照 射’於基板内部形成線形雷射光照射區域。又，可於雷射 光之光路上設置透鏡藉由聚光而形成焦點，將該焦點位置 對準邊緣線1 1之前方近處位置，將焦點避開基板i 〇，或 者反過來調節焦點位置於基板1 〇内部，形成面狀或立體 狀之雷射光照射區域。於本實施形態中，以使線形雷射光 照射區域形成於基板内之方式進行直線狀照射。 14 200920704 根據該去角方法，使用Er雷射光源20進行基板之加 熱。因此，並非藉由邊緣線11附近之表面吸收進行加熱， 而是藉由内部吸收進行加熱。 此處’就將雷射光源由C02雷射替換成Er雷射所產 生之差異’一面與先前之方法比較一面進行說明。 圖3係表示藉由圖1所說明之配置而使用Er雷射光源 20進行加熱時玻璃基板之狀態之示意剖面圖，圖3 ( a )係 表不玻璃基板内部之溫度分布以及雷射光吸收區域之圖， 圖3 (b)係表示熱應力分布以及裂痕形狀之圖。 圖4係表示使用c〇2雷射光源代替圖3中之Er雷射 光源時之玻璃基板之狀態之示意剖面圖，圖4 ( a )係表示 溫度分布以及雷射光吸收區域之圖，圖4 ( b )係表示熱應 力分布以及裂痕形狀之圖。 為了方便說明，首先就利用C〇2雷射21進行加熱之 情形進行說明。若自C〇2雷射光源21朝向邊緣線丨丨直線 狀傾斜入射（對2個端面l〇a、l〇b約45度進行入射）c〇2 雷射（波長10.6 ，則由於玻璃基板1〇對於該波長 之吸收率較高而形成表面吸收，邊緣線11上之入射點j 2 成為雷射光吸收區域。因而，以入射點12為中心之點狀 熱源13逐漸加熱玻璃基板10内部。即，於圖4 (a)中如 貫線所示’形成以入射點12為中心且大致為同心圓狀之 现度分布Tc ’又，以同心圓狀逐漸進行熱傳遞。繼而，藉 由形成同心圓狀之溫度分布Tc，於圖4 ( b )中如一點鏈 線所示，於基板1〇之内部形成朝向邊緣線丨丨且具有瘤狀 15 200920704 凸部之波型熱應力分布（拉伸應力）Fc。 其後，加熱後之冷卻逐漸進展，若基板内所產生之熱 應力充分變大’則最後會自基板表面至内部產生裂痕。 通常，在未形成初始龜裂之狀態下於基板表面上產生 裂痕時，具有裂痕沿相對基板表面垂直之方向進入之性 質。又，若裂痕於基板内產生熱應力分布場之狀態下進入， 則存在裂痕易於沿著拉伸應力之集中方向進行延伸之性 貝。另一方面，只要是已產生之裂痕亦有平直進入之性質。 根據該等性質’於玻璃基板10之角部分U，裂痕受到 欲沿具有瘤狀凸部之波型熱應力分布Fc之形狀進行延伸 之力的作用，並且自基板表面垂直進入之裂痕亦受直接平 直進入之力作用，該等力對抗作用之結果，形成脫離波型 應力分布Fc之圓弧狀裂痕C，。即，一般認為形成有較大 波動之形狀之應力分布場（拉伸應力）時，裂痕無法完全 隨該應力分布場而變，而欲直線狀延伸之力占優，其結果 裂痕不受波型應力分布場之影響進行延伸，產生沿拉:應 力方向延伸之力與平直進入之力平衡後之中間呈圓弧狀^ 裂痕延伸。 相對於此，當使用如圖3所示之Er雷射光源2〇時， 右Er雷射（波長2.94 # m)朝向邊緣線u傾斜入射並 直線狀前進，則由於玻璃基才反10對該波長之吸收率為中 間值（0·05〜0.95) ’故成為内部吸收，自邊緣線"至基 板内邻形成線形雷射光吸收區域。因此，來自入射點12 之線形熱源14逐漸加熱玻璃基板1〇内部。即，於圖3 200920704 中如實線所示，以線形熱源14 4中心形成u字狀（或v 子狀）之溫度分布Td，又，逐漸進行U字狀熱傳遞。其 人由於形成U子狀之溫度分布Td，故於圖3(b)中如 一點鍵線所*，基板内冑之瘤狀凸部U、，形成大致直線 狀熱應力分布場（拉伸應力）Fd。 即，藉由利用内部吸收形成線形分布之熱源i4，於圖 4 (C02雷射照射之情形時）中，熱應力分布中呈現瘤狀凸Any of the wavelength conversion light sources produced by Ho fiber field, semiconductor laser, and optical parameter oscillation. 'Because the Er:YAG laser can illuminate the laser light with a wavelength of g 2 94 pm and the Ho:YAG laser emits a laser with a wavelength of 2〇9 _, it can be 12 200920704 to generate internal absorption by using these laser sources. And obtain a smaller chamfered working surface. Furthermore, these lasers have been used for medical purposes until now, and mainly use a small output power (1 GW or less), but in the use of exfoliation processing, the output power is large (example % 1〇w~2〇〇w In the above invention, the laser beam on both sides of the edge line may be formed at a position near the edge line to form an initial line parallel to the edge line. The straw is used as the starting point of the crack extension from the initial crack line, and the position where the crack is formed can be more precisely controlled. In the above invention, the shape of the crack profile of the initial crack line can be such that the turtle uranium & tilt is inclined in the direction of the edge line. On the other hand, the crack formed on the surface of the substrate becomes an oblique direction and is approached in the direction of the corner-working surface. Therefore, the direction in which the crack extends can be more precisely controlled by the thermal stress distribution field (tensile stress). Here, the slanting crack can be formed by pressing a cutter wheel having a left and right asymmetrical rib line on the surface of the substrate. Further, the oblique crack can be formed by the ablation processing of the laser irradiation in the oblique direction with respect to the surface of the substrate. By pressing the cutter wheel having the asymmetric blade perpendicularly on the substrate, the crack can be formed in the oblique direction with respect to the surface of the substrate. Moreover, since the high output laser (for example, YAG laser) which reduces the beam diameter is irradiated obliquely to the surface of the substrate, no crack is formed and the tilting can be performed (but the intensity is not divided). Cracked. Therefore, the inclined crack formed by the processing methods can be precisely controlled by borrowing 13 200920704 as the starting point of the crack or the extending direction of the crack. [Embodiment] Hereinafter, embodiments of the present invention will be described using the drawings. Furthermore, the present invention is not limited to the following description. The sorrows of the brothers and the moons include various forms without departing from the scope of the present invention. Fig. 1 is a view showing a method of chamfering a brittle material substrate according to a first embodiment of the present invention. Fig. 2 is a view showing the α-α· cross section of Fig. 1; The edge line u which is required to be chamfered with the glass substrate 1G is opposed thereto; the Er: YAG laser light source 20 (hereinafter referred to as the laser light source 2 〇) is disposed upright, and the laser light is made from the substrate. The edge line u is obliquely incident toward the inside of the substrate. Subsequently, the glass substrate 10 is relatively moved with respect to the laser light source 2, so that the laser light is scanned along the edge line 1丨. Specifically, scanning is performed using a platform driving mechanism (not shown) that moves the position of the glass substrate 10. Alternatively, the position of the glass substrate 1'' can be fixed, and the laser light source 2 can be moved by a moving mechanism such as a robot arm. In the shape of the beam of the laser beam, the laser beam can be irradiated linearly to form a linear laser beam irradiation region inside the substrate. Moreover, a lens can be disposed on the optical path of the laser light to form a focus by concentrating, and the focus position is aligned with the position immediately before the edge line 1 1 , the focus is avoided from the substrate i 〇, or the focus position is reversed. The inside of the substrate 1 is formed into a planar or three-dimensional laser light irradiation region. In the present embodiment, linear irradiation is performed so that the linear laser beam irradiation region is formed in the substrate. 14 200920704 According to the chamfering method, heating of the substrate is performed using the Er laser light source 20. Therefore, heating is not performed by surface absorption near the edge line 11, but by internal absorption. Here, the difference between the laser source replaced by the C02 laser and the Er laser is described as being compared with the previous method. 3 is a schematic cross-sectional view showing a state of a glass substrate when heated by the Er laser light source 20 by the configuration illustrated in FIG. 1, and FIG. 3(a) shows the temperature distribution inside the glass substrate and the laser light absorbing region. Figure 3 (b) shows the thermal stress distribution and the shape of the crack. 4 is a schematic cross-sectional view showing a state of a glass substrate when a c〇2 laser light source is used instead of the Er laser light source of FIG. 3, and FIG. 4(a) is a view showing a temperature distribution and a laser light absorption region, FIG. (b) is a diagram showing the distribution of thermal stress and the shape of the crack. For convenience of explanation, first, the case where the C〇2 laser 21 is used for heating will be described. If the C 〇 2 laser light source 21 is obliquely incident obliquely toward the edge line (incident of the two end faces l 〇 a, l 〇 b about 45 degrees) c 〇 2 laser (wavelength 10.6, due to the glass substrate 1 〇 The absorption rate at this wavelength is high to form surface absorption, and the incident point j 2 on the edge line 11 becomes a laser light absorbing region. Therefore, the point heat source 13 centering on the incident point 12 gradually heats the inside of the glass substrate 10. In Fig. 4(a), as shown by the line "the formation of a concentricity distribution Tc" centered on the incident point 12 and substantially concentric, heat transfer is performed concentrically. Then, by forming a concentric The circular temperature distribution Tc, as shown by a chain line in Fig. 4 (b), forms a wave-type thermal stress distribution (stretching) toward the edge line 丨丨 and having a knob-like 15 200920704 convex portion inside the substrate 1 〇 Stress) Fc. Thereafter, the cooling after heating is gradually progressed, and if the thermal stress generated in the substrate is sufficiently increased, a crack is generated from the surface of the substrate to the inside. Usually, the substrate is formed without the initial crack. Cracks on the surface when cracks occur The property enters in a direction perpendicular to the surface of the substrate. Further, if the crack enters in a state in which a thermal stress distribution field is generated in the substrate, there is a case where the crack is easily extended along the concentrated direction of the tensile stress. As long as it is a crack that has already occurred, it has a straight-through property. According to these properties, at the corner portion U of the glass substrate 10, the crack is subjected to a force to be extended along the shape of the wave-shaped thermal stress distribution Fc having the knob-like convex portion. The effect, and the crack that enters perpendicularly from the surface of the substrate is also affected by the direct straight-in force. As a result of the opposing action, the arc-shaped crack C of the wave-shaped stress distribution Fc is formed, that is, it is generally considered to be formed. In the stress distribution field (tensile stress) of a large fluctuation shape, the crack cannot completely change with the stress distribution field, and the force to be linearly extended is dominant, and the result is that the crack is not affected by the wave stress distribution field. The extension causes an arc-shaped ^ crack extension in the middle of the tension extending in the direction of the stress and the force of the straight entry. In contrast, when used as shown in FIG. When the Er laser light source is 2 ,, the right Er laser (wavelength 2.94 # m) is obliquely incident toward the edge line u and proceeds linearly, and the absorbance of the wavelength is negative (0·05~ 0.95) 'There is an internal absorption, forming a linear laser light absorption region from the edge line to the inner side of the substrate. Therefore, the linear heat source 14 from the incident point 12 gradually heats the inside of the glass substrate 1 . That is, as shown in Figure 3 200920704 As shown by the line, the temperature distribution Td of the U-shape (or v-like shape) is formed at the center of the linear heat source 14 4, and the U-shaped heat transfer is gradually performed. Since the U-shaped temperature distribution Td is formed, the figure is formed. In 3(b), a point of the key line*, the knob-like convex portion U in the substrate, forms a substantially linear thermal stress distribution field (tensile stress) Fd. That is, by using the internal absorption to form a linearly distributed heat source i4, in Fig. 4 (in the case of the C02 laser irradiation), the thermal stress distribution exhibits a knob-like convexity.
部之部分將受到更多加熱，該部分之溫度分布產生變化而 使熱應力分布平坦化，其結果，獲得接近直線之熱應力分 布場（拉伸應力）Fd。 其後，加熱後之冷卻逐漸進展，基板内所產生之熱應 力充分變Λ ’最後自基板表面至内部產生裂痕但由於形 成有直線狀熱應力分布（拉伸應力場）Fd，故裂痕可沿著 該直線延伸。 列即，於玻璃基板10之角部，自基板表面垂直進入 之衣痕可沿著直線狀熱應力分布場（拉伸應力）Fd延伸， 故沿著該直線狀裂痕連續形成去角加王面，其結果為形成 平坦的去角加工面C。或者，即使未達到平坦面亦能形成 凹陷較小之去角加工面。 行:此，利用Er雷射光源2〇於玻璃基板1〇之角部分進 ::吸收，藉此可控制熱應力分布(拉伸應力），因 可藉由形成裂痕可跟隨之熱應力分布場，來控制去 工面之形狀。 J如’於上述實施形態中，雖以相對於炎邊緣線η之 17 200920704 個基板表面l〇a、1〇b約45度入射，藉此使所形成之去 角力面之角度形成為相對於2個端面l〇a、10b為約45 度，但可藉由改變入射角度，使去角加工面傾斜向任一端 +又亦可以面狀而非直線狀照射雷射光之光束形狀， 取:射光吸收區域成為面狀、立體狀。進而亦可使雷射光 一 7成焦點，使焦點對準基板内部，或者使焦點對準基 ΓPart of the part will be heated more, and the temperature distribution of the part will change to flatten the thermal stress distribution. As a result, a thermal stress distribution field (tensile stress) Fd close to a straight line is obtained. Thereafter, the cooling after heating gradually progresses, and the thermal stress generated in the substrate is sufficiently changed. ' Finally, cracks are generated from the surface of the substrate to the inside, but since a linear thermal stress distribution (tensile stress field) Fd is formed, the crack can be along The line extends. In the corner of the glass substrate 10, the clothing marks entering perpendicularly from the surface of the substrate may extend along the linear thermal stress distribution field (tensile stress) Fd, so that the chamfering plus the king face is continuously formed along the linear crack. As a result, a flat chamfered surface C is formed. Alternatively, even if the flat surface is not reached, a chamfered working surface having a small depression can be formed. OK: This uses the Er laser source 2 to immerse in the corner of the glass substrate: absorption, thereby controlling the thermal stress distribution (tensile stress), because the thermal stress distribution field can be followed by the formation of cracks. To control the shape of the work surface. In the above embodiment, J is incident at about 45 degrees with respect to the substrate edge l〇a, 1〇b of the 2009 edge of the edge line η, whereby the angle of the formed chamfering force surface is formed as opposed to The two end faces l〇a, 10b are about 45 degrees, but by changing the angle of incidence, the chamfered surface can be tilted toward either end + and can also be planar rather than linear to illuminate the beam shape of the laser beam. The absorption region is planar and three-dimensional. In turn, the laser light can be made into a focus to focus on the inside of the substrate, or to focus on the substrate.
V 之月ί方近處，使得雷射光吸收區域成為立體形狀。雖形 成對應於各個雷射光吸收區域形狀之熱源形狀並進行加 熱，而於玻璃基板i…部分形成各種溫度分布，但只 要形成裂痕可跟隨之熱應力分布場，便可控制去角加工面 之形狀或方向。 /鏖而，就第二實施形態進行說明。於第一實施形態中 進仃了如下改良’ gp ’利用照射可内部吸收之雷射光而形 成凹：較小之去角加工面或平坦的去角加工面，但為了進 ，：提咼所形成之去角加工面之位置或方向之控制性，於 本實施形態中導入初始龜裂線。 圖5係表示本發明另一實施形態之脆性材料基板之去 角加工方法的圖。又，6係表示垂直於圖$之去角加工 面之B-B1剖面之圖。 首先，於夹持玻璃基板1〇之需要進行去角加工的邊緣 線η之2個基板表面1Ga、1Gb上，且於邊緣線"附近之 位置形成沿著該邊緣線u平行前進之初始龜裂線15、16。 形成初始龜裂線15、16之位置’必須位於隨後步驟中 18 200920704 照射雷射時’形成熱應力分布 r D 々贫（拉伸應力）以引導裂痕 之區域内。具體而言，較佳為 竿文佳為形成於距離邊緣線〇 5腿〜 3 mm之位置。又，使初始龜裂 6之剖面形狀為相對 於基板表面l〇a、l〇b龜裂前端拉 傾斜龜裂。 ㈣錢近邊料η側傾斜之 圖7係表示用於形成傾斜龜裂之刀輪之一例之圖。該 刀輪30,如圖7 (a)中放大刀 八 ^ n ^ 邛刀所示，沿著刀刃稜線 之0周方向隔開適當間隔形成有 ^ /珉有溝槽31。於相鄰溝槽31 a1幵^成大起3 2，藉此可提昇劃绩 、、番描u 扠升sj線性能。圖7 (b)表示 溝槽3 1之剖面（C_C，剖面）。 溝槽31之切除面以相對於 衩線為左右非對稱之方式傾斜。 藉由形成此種非對稱溝 匕’可不損及劃線性能而形成傾斜 2989602號）。 、麥…日本專利第 又’使用刀刃稜線之左右刃备非批^ 石刀角非對稱之刀輪亦可形成 傾蚪龜裂（參照日本特開平9_278474號）。The vicinity of the month of V, the laser light absorbing area becomes a three-dimensional shape. Although the shape of the heat source corresponding to the shape of each of the laser light absorbing regions is formed and heated, and various temperature distributions are formed in the glass substrate i, the shape of the chamfered surface can be controlled as long as the thermal stress distribution field along which the crack can be formed is formed. Or direction. The second embodiment will be described. In the first embodiment, the following improvement is made: 'gp' is formed by irradiating laser light that can be internally absorbed to form a concave: a small chamfered surface or a flat chamfered surface, but for the sake of progress: In the controllability of the position or direction of the chamfered surface, the initial crack line is introduced in the present embodiment. Fig. 5 is a view showing a method of chamfering a brittle material substrate according to another embodiment of the present invention. Further, the 6 series shows a view of the B-B1 cross section perpendicular to the chamfering surface of Fig. $. First, on the two substrate surfaces 1Ga and 1Gb of the edge line η which is required to perform the chamfering processing on the glass substrate 1 , and the position near the edge line " the initial turtle which advances parallel along the edge line u Split line 15, 16. The position at which the initial crack lines 15, 16 are formed must be located in the subsequent step 18 200920704 when the laser is irradiated to form a thermal stress distribution r D lean (tensile stress) to guide the region of the crack. Specifically, it is preferable that the 竿文佳 is formed at a position of 5 legs to 3 mm from the edge line. Further, the cross-sectional shape of the initial crack 6 is such that the crack is inclined with respect to the crack tip of the substrate surface 10a, lb. (4) The side of the money is inclined at the side of the η side. Fig. 7 is a view showing an example of a cutter wheel for forming a slanted crack. As shown in Fig. 7 (a), the cutter wheel 30 has a groove 31 formed at an appropriate interval along the circumferential direction of the blade ridge line as shown by the knives of the knives. The adjacent grooves 31 a1 are formed to be large and 3 2 , thereby improving the performance and performance of the sj line. Fig. 7(b) shows a section (C_C, cross section) of the groove 31. The cut surface of the groove 31 is inclined in such a manner as to be asymmetric with respect to the twist line. By forming such an asymmetric groove 匕, the inclination 2989602 can be formed without impairing the scribing performance). , Mai... Japanese Patent No. 'Using the left and right edges of the blade ridge line to prepare a non-batching stone blade angle asymmetric cutter wheel can also form a dumping crack (refer to Japanese Patent Laid-Open No. 9_278474).
‘V 又，作為形成傾斜龜裂之其他方法^使用如下方法， ”8所示，縮小高輸出雷射（例如YAG雷射或脈衝c〇2 :射）之光束直徑並聚光，以使焦點對準基板表面之方式 進仃加熱，並以針點沿傾斜方向進行消熔加工。 利用該等方法形成傾斜龜裂後，以與第一實施形態相 冋之方式，將Er雷射光源2〇朝向邊緣線u，將^雷射 (波長2.94以m )直線狀傾斜入射。 其結果，裂痕以初始龜料15、16之位置為起點延伸， 進而裂痕之延伸方向變成傾斜龜裂方向，朝基板内部延 19 200920704 伸。此時，藉由使基板内之熱應力分布場（拉伸應力）接 近於傾斜龜裂方向’可使裂痕沿著熱應力分布場（拉伸應 力）延伸’故可藉由該裂痕使去角加工面成為所需形狀。 以上，雖就玻璃基板之去角加工進行了說明，但關於 其他脆性材料基板，亦可藉由對應於各種基板材料之吸收 特性’選擇能夠進行内部吸收之雷射光源，而1現同樣之 去角加工。'V Again, as another method of forming a slanted crack, use the following method, as shown in Fig. 8, to reduce the beam diameter of a high-output laser (such as YAG laser or pulse c〇2: shot) and condense it to focus The heating is performed on the surface of the substrate, and the melting process is performed in the oblique direction by the needle point. After the oblique crack is formed by the above methods, the Er laser light source 2 is disposed in a manner opposite to that of the first embodiment. The laser beam (wavelength 2.94 m) is obliquely incident toward the edge line u. As a result, the crack extends from the position of the initial tortoises 15, 16 and the direction of the crack becomes the oblique crack direction toward the substrate. Internal extension 19 200920704. At this time, by making the thermal stress distribution field (tensile stress) in the substrate close to the oblique crack direction 'the crack can be extended along the thermal stress distribution field (tensile stress)' The chamfered surface is formed into a desired shape by the crack. Although the chamfering process of the glass substrate has been described above, other brittle material substrates may be selected by absorption characteristics corresponding to various substrate materials. Enough for absorption of the laser beam source inside, while the same is now a chamfered processing.
本發明應用於玻璃基板等脆性材料基板之去角加工 【圖式簡單說明】 圖1係表示本發明一實施形態之脆性材料基板之去角 加工方法的圖。 圖2係圖1之A-A，剖面圖。 之狀態 —圖係I不使帛Er雷射光源加熱時之玻璃基板 的示意剖面圖。 之玻璃基板之狀 ^圖4係表不使用c〇2雷射光源加熱時 態的示意剖面圖。 备士圖5係表不本發明另一實施形態之脆性材料基板之去 角加工方法的圖。 的圖 表丁本I明另一實施形態之裂痕形成裝置之概略構成 圖6係圖5之B_B，剖面。 ’、不利用非對稱刀輪形成傾斜龜裂之狀態之 20 200920704 圖8係表示利用雷射消熔形成傾斜龜裂之狀態之圖。 :、表$使用CC>2雷射光源並藉由加熱炼融進行去 角加工時之雷射照射狀態之圖。 圖丨〇係表示使用c〇2雷射光源並藉由雷射劃 去角加工時之雷射照射狀態之圖。 订 士圖11係藉由使用c〇2雷射之雷射劃線進行去角 時之加工剖面之放大圖。 口工 【主要元件符號說明】 10 玻璃基板 l〇a 、 i〇b 基板表面 11 邊緣線 12 雷射光吸收區域 (點狀） 13 熱源 14 雷射光吸收區域 (線形） 20 Er雷射光源 30 非對稱刀輪 40 YAG雷射 21The present invention is applied to a chamfering process of a brittle material substrate such as a glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a method of chamfering a brittle material substrate according to an embodiment of the present invention. Figure 2 is a cross-sectional view taken along line A-A of Figure 1. State - Figure 1 is a schematic cross-sectional view of the glass substrate when the Er laser light source is not heated. The shape of the glass substrate Fig. 4 is a schematic cross-sectional view showing the state of heating without using the c〇2 laser light source. Fig. 5 is a view showing a method of chamfering a brittle material substrate according to another embodiment of the present invention. Figure 1 shows a schematic configuration of a crack forming apparatus according to another embodiment. Fig. 6 is a cross section taken along line B_B of Fig. 5. The state in which the oblique crack is not formed by the asymmetric cutter wheel 20 200920704 Fig. 8 is a view showing a state in which the oblique crack is formed by laser melting. :, Table $ is a graph of the laser irradiation state when the CC>2 laser light source is used for the angular processing by heating and smelting. The figure shows the state of the laser irradiation state when the c〇2 laser light source is used and the angle is processed by the laser. The book 11 is an enlarged view of the processing profile when the chamfer is performed by using the laser scribe line of the c〇2 laser. Oral [Major component symbol description] 10 Glass substrate l〇a, i〇b Substrate surface 11 Edge line 12 Laser light absorption area (dot) 13 Heat source 14 Laser light absorption area (linear) 20 Er Laser source 30 Asymmetry Knife wheel 40 YAG laser 21