TW200818383A - Electrostatic chuck heater - Google Patents
Electrostatic chuck heater Download PDFInfo
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- TW200818383A TW200818383A TW096125178A TW96125178A TW200818383A TW 200818383 A TW200818383 A TW 200818383A TW 096125178 A TW096125178 A TW 096125178A TW 96125178 A TW96125178 A TW 96125178A TW 200818383 A TW200818383 A TW 200818383A
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- electrode
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- sintered body
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- alumina
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
200818383 九、發明說明: 【發明所屬之技術領域】 本發明是有關於庫侖式(C〇ul〇mb)的靜電固持加熱器。 【先前技術】 過去以來,在製造半導體等之際,有時會使用庫侖式 靜電固持加熱器。 此靜電固持加熱器是由··陶瓷構成的基體、設置於基 體内部的靜電電極與加熱電極、與此些靜電電極以及加二 妹連接的供電構件、各種的周邊構件所構成(例如是請參 …、專利文獻1)。而且’基體的上面形成有用於載置晶圓等 基板的基板载置面。然後,由前述靜電電極至基板載置面 的部份形成有介電層,由靜電電極至加熱電極的部份形成 有基板I ’由力α熱電極至基板的下面形成有支撐層。 以:說明構成此靜電固持加熱器的基體的製造方法的 一例°尚且’此製造方法是將構成靜電固持加熱器的基板 上下顛倒配置而形赤的。女 的亦即疋,一般的靜電固持加熱器 由上側依序配置右介+* 有^電層、基板層以及支撐層。但是, 層配置在最下侧,在介電層之上形成基板層, =板=形成支撐層以製作出基體後,將基體上下颠倒 配置。以下§兄明簡單的製造程序。 為Α板#的I :作為"電層的板狀第1氧化銘燒結體,作 為基板層的胚以⑽U—),以 化鋁燒結體。此地^ 巧Μ層的弟2乳 —97弟1軋化鋁燒結體以及第2氧化鋁燒200818383 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an electrostatically held heater of the Coulomb type (C〇ul〇mb). [Prior Art] In the past, Coulomb type electrostatic holding heaters were sometimes used in the production of semiconductors and the like. The electrostatic holding heater is composed of a base made of ceramic, an electrostatic electrode provided inside the substrate, a heating electrode, a power supply member connected to the electrostatic electrode and the second electrode, and various peripheral members (for example, please refer to ..., Patent Document 1). Further, a substrate mounting surface on which a substrate such as a wafer is placed is formed on the upper surface of the substrate. Then, a dielectric layer is formed from a portion of the electrostatic electrode to the substrate mounting surface, and a portion from the electrostatic electrode to the heating electrode is formed with a substrate I'. A support layer is formed by a force α-hot electrode to a lower surface of the substrate. An example of a method of manufacturing a substrate constituting the electrostatic holding heater is described. The manufacturing method is such that the substrate constituting the electrostatic holding heater is placed upside down and shaped red. The female is also awkward. The general electrostatic holding heater is arranged from the upper side to the right side +* with the electric layer, the substrate layer and the support layer. However, the layer is disposed on the lowermost side, and a substrate layer is formed on the dielectric layer, = plate = forming a support layer to form a substrate, and then the substrate is placed upside down. The following § brothers show simple manufacturing procedures. I is the plate-shaped first oxide sintered body of the electric layer, and the aluminum alloy sintered body is made of (10) U-) as the substrate layer. This place ^ 巧 Μ layer of the brother 2 milk - 97 brother 1 rolled aluminum sintered body and the second alumina burn
7066-8780-PF 5 200818383 結體是藉由熱壓成形以製作的。 其次,將前述第1氧化鋁燒結體上下顛倒配置以使第 1氧化銘燒結體的裡面為上側,&此裡面的上側形成靜電 電極。然後,在靜電電極之上形成胚片,在胚片之上形成 加熱電極,在該加熱電極的上側配置第2氧化鋁燒結體。 然後,將此些的第1氧化銘燒結體、胚片、第2氧化銘燒 結體於上下方向邊加壓邊以熱壓燒成使其一體化,藉此製 作基體。最後在基體裝設供電構件以及周邊構件,以完成 靜電固持加熱器。 【專利文獻1】特開平u —1 2053號公報 【發明内容】 [發明所要解決的課題] 然而,前述習知的靜電固持加熱器中,由於構成介電 層以及支撐層的部位是經由將氧化鋁燒結體2次燒成所形 • 成的,、氧化銘燒結體中的結晶粒子有粗大化的傾向。因此二 在作為庫侖式的靜電固持頭使用時,介電層❸體積電阻率 降低,雖然在常溫顯示出沒有問題的基板的⑽著應答性, 但是在高溫時具有基體上面所載置基板的脫著應答性惡化 的問題。 此處本龟明的目的為提供一種靜電固持加熱器,即 使在高溫時基板的脫著應答性亦優良。 [用以解決課題的手段]7066-8780-PF 5 200818383 The knot is made by hot press forming. Next, the first alumina sintered body is placed upside down so that the inside of the first oxidized sintered body is on the upper side, and the upper side of the inside is formed with an electrostatic electrode. Then, a green sheet was formed on the electrostatic electrode, a heating electrode was formed on the green sheet, and a second alumina sintered body was placed on the upper side of the heating electrode. Then, the first oxidized sintered body, the green sheet, and the second oxidized sintered body are pressed by hot pressing in the vertical direction to form a matrix. Finally, the power supply member and the peripheral member are installed on the base to complete the electrostatic holding of the heater. [Problem to be Solved by the Invention] However, in the above-described conventional electrostatic holding heater, since the portions constituting the dielectric layer and the support layer are oxidized In the case where the aluminum sintered body is formed by secondary firing, the crystal particles in the oxidized sintered body tend to coarsen. Therefore, when used as a Coulomb type electrostatic holding head, the dielectric layer has a reduced volume resistivity, and although the substrate exhibits responsiveness at room temperature without problems, it has a substrate on the substrate at a high temperature. The problem of deteriorating responsiveness. Here, the purpose of the present turtle is to provide an electrostatic holding heater which is excellent in the detachment resistance of the substrate even at a high temperature. [Means to solve the problem]
為了達成前述目的,本發明的靜電固持加熱器包括氧 7066-8780-PF 6 200818383 會 化鋁燒結體所構成的基體、埋設於該基體上部側且含導電 物貝的靜電電極、埋設於該基體下部側且含導電物質的加 熱電極,4述基體是由從靜電電極至基體上面的介電層、 “靜電電極至力^熱電極的基板層、從力口熱電極至基體下面 的支撐層所構成,其中在構成前述基板層的氧化紹燒結體 的上面塗佈含黏結劑的導電膠且印刷靜電電極,並於下面 P刷加熱電極,此氧化鋁燒結體在煅燒之後,於在靜電電 φ j的上側以及加熱電極的下侧配置氧化鋁粉體的狀態下, 將此些的氧化鋁粉體與氧化鋁燒結體加壓成形並加壓燒 成,藉此將前述介電層中的靜電電極附近的前述導電物質 的擴散面積率設定為0.25%以下。 、 [發明效果] 本發明的靜電固持加熱器具有以下的效果。 ,1)由於作為介電層的部位是僅燒成一次氧化鋁粉體而 心成的’因此能夠抑制結晶粒子的肥大化。因此,介電層 鲁此夠保持兩的體積電阻率,在作為庫侖式靜電固持加熱器 使用時,提昇高溫時的基板的脫著應答性。 、,2)基體的作為介電層的部位是藉由將氧化鋁粉體加壓 成形後加壓燒成而形成的。因此,在燒成過程中,靜電電 極中的導電物質具有經由導電膠中的黏結劑擴散到氧化銘 粉體中的疑慮。但是,本發明之作為基板層的氧化銘燒結 體在塗佈導電膠後施加锻燒,藉由此锻燒以將導電膠中的 黏結劑去除。依此,靜電電極中的導電物質不會擴散至氧 化銘粉體中’能夠防止介電層的體積電阻率的降低。而且,In order to achieve the above object, the electrostatic holding heater of the present invention comprises a base body composed of an oxygenated 7066-8780-PF 6 200818383 aluminum alloy sintered body, an electrostatic electrode embedded in the upper side of the base body and containing a conductive material shell, and embedded in the base body. The lower side and the heating electrode containing the conductive material, the substrate is from the electrostatic layer to the dielectric layer above the substrate, the "electrostatic electrode to the substrate layer of the heat electrode, the thermal electrode from the force port to the support layer under the substrate In the composition, the conductive paste containing the binder is applied on the upper surface of the sintered body constituting the substrate layer, and the electrostatic electrode is printed, and the heating electrode is brushed under the P layer. After the calcination, the alumina sintered body is electrostatically charged. In the state in which the alumina powder is disposed on the upper side of j and the lower side of the heating electrode, the alumina powder and the alumina sintered body are pressure-molded and pressure-fired, whereby the static electricity in the dielectric layer is formed. The diffusion area ratio of the conductive material in the vicinity of the electrode is set to 0.25% or less. [Effect of the Invention] The electrostatic holding heater of the present invention has the following effects: 1) Since it is used as a dielectric layer The portion is formed by firing only the alumina powder once. Therefore, it is possible to suppress the enlargement of the crystal particles. Therefore, the dielectric layer is sufficient to maintain the volume resistivity of the two, and is used as a Coulomb type electrostatic holding heater. And improving the detachment resistance of the substrate at a high temperature. 2) The portion of the substrate as the dielectric layer is formed by press-forming the alumina powder and then press-baking it. Therefore, during the firing process In the middle, the conductive material in the electrostatic electrode has a concern of diffusing into the oxidized powder through the adhesive in the conductive paste. However, the oxidized sintered body as the substrate layer of the present invention is subjected to calcination after application of the conductive paste. The calcination is thereby performed to remove the binder in the conductive paste. Accordingly, the conductive material in the electrostatic electrode does not diffuse into the oxidized powder, which can prevent a decrease in the volume resistivity of the dielectric layer.
7066-8780-PF 7 200818383 侖式靜電固持加熱器使用•’由於能 的基板的脫著應答性,因㈣fit ❿時 使用。 勹靜電固持加熱器 【實施方式】 以下β兒明本發明的實施型態。 [靜電固持頭]7066-8780-PF 7 200818383 The use of the erectile electrostatic holding heater is based on (4) fit 由于 due to the detachability of the substrate.勹Electrostatic holding heater [Embodiment] Hereinafter, an embodiment of the present invention will be described. [electrostatic holding head]
平面圖,圖2所給干兔% —㈤ g %叫付加熱器的 …曰不為沿者圖1的Η線的剖面圖。 依本’"月實施型態的靜 示,包括氧化鋁燒么…… ·Ά,如®卜2所 站乂、、、口體所構成的基體3、 中的上部側的靜電電極 :…基體3 熱電極7。於太會„ , °又在基體3中的下部側的加 於本實施型態t是以 固持加熱器來進行說明,作 有力’,、、電極1的靜電 固持加埶器也嶋田 未包括此加熱電極1的靜電 …、為也此夠適用於本發明。The plan view, the dry rabbit % given in Figure 2 - (f) g % called the heater ... 曰 is not a cross-sectional view of the Η line of Figure 1. According to the '"monthly implementation type of static display, including alumina burning... ·Ά, such as the base 2, the base body formed by the mouth body 3, the upper side of the electrostatic electrode:... Substrate 3 Hot electrode 7. In the present embodiment, the lower side of the base body 3 is added to the present embodiment. The description is made by holding the heater, and the electrostatic holding device of the electrode 1 is also included in the field. The static electricity of the heating electrode 1 is also suitable for the present invention.
[基體] X 削述基體3如圖丨及圖 體3的上面(表面)形成有用 面9 〇 2所示的形成為略圓盤狀,基 以載置晶圓等基板的晶圓載置 位形成介電層U,…锃電電極5至基板載置面9的部 基板屏 攸靜電電極5至加熱電極7的部份形成 卷板層29,從加埶電 人 厣3〗+ + 1至基體下面23的部位形成支撐 增此些的介電居n 為一體。 S 土板層29以及支撐層31係形成 8 1[Substrate] X The base 3 is formed into a substantially disk shape as shown in the upper surface (surface) of the figure 3 and the surface 3 of the figure 3, and is formed by placing a wafer on a substrate such as a wafer. The dielectric layer U, the portion of the substrate electrode 9 to the substrate mounting surface 9 and the portion of the electrostatic electrode 5 to the heating electrode 7 form a coil layer 29, from the twisted electric 厣 3 + + 1 to the substrate The portion of the lower 23 is formed to support and increase the dielectric of n. S soil layer 29 and support layer 31 are formed 8 1
〇66-878〇-PF 200818383 [靜電電極] 如圖1 2所不’在基體3的上部側埋設有直徑較基體 3的外仫小的圓板狀的靜電電極5。此靜電電極5含有鎢或 是碳化鶴。靜電電極5可藉由印刷含有作為導電物質的鶴 金屬粉末或碳化物的導電膠以形成。靜電電極的形狀並未 限定為圓板,亦可以形成為網孔狀、梳形狀、圓形狀等。 尚且,在介電層11中的靜電電極5的附近,如同後述的靜 龜電電極5所含的導電性物質(例如是鶴或碳化鶴)的粒子的 擴散面積率為0.25%以下。 而且,如圖2所示,在基體3的中心部形成從基體3 的下面23朝向上方延伸的收容孔15,該收容孔15内配嗖 有靜電電極用供電構件2卜此靜電電極用供電構件2ι的 上端經由連接構件19而連接靜電電極5。從靜電電極用供 電構件21經由連接構件19將電壓施加至靜電電極5,在 基體3的介電層11A生靜電吸附力(庫侖力),以使晶圓等 馨基板被吸附在基體3的基板載置面9。尚且,靜電電極用 供電構件21的上端亦可以不經由連接構件19而與靜電電 極5直接連接。 [加熱電極] 加熱電極7亦可以使用塗佈並印刷導電膠所得者。導 電膠含有作為鎢或是碳化鎢的粉末與黏結劑。 而且’如圖2所示,加熱電極7埋設於基體3的下部 侧’具體而言是配置於較靜電電才亟5更下侧。然後,形成 從基體3的下φ 23車月向上方延伸的收容孔17,該收容孔〇66-878〇-PF 200818383 [Electrostatic Electrode] As shown in Fig. 12, a disk-shaped electrostatic electrode 5 having a diameter smaller than that of the outer surface of the base 3 is embedded in the upper side of the base 3. This electrostatic electrode 5 contains tungsten or a carbonized crane. The electrostatic electrode 5 can be formed by printing a conductive paste containing a crane metal powder or carbide as a conductive substance. The shape of the electrostatic electrode is not limited to a circular plate, and may be formed into a mesh shape, a comb shape, a circular shape or the like. Further, in the vicinity of the electrostatic electrode 5 in the dielectric layer 11, the diffusion area ratio of the particles of the conductive material (for example, a crane or a carbonized crane) contained in the electrostatic electrode 5 to be described later is 0.25% or less. Further, as shown in FIG. 2, a receiving hole 15 extending upward from the lower surface 23 of the base 3 is formed in the center portion of the base 3, and the power supply member 2 for the electrostatic electrode is disposed in the receiving hole 15 The upper end of 2 is connected to the electrostatic electrode 5 via the connecting member 19. A voltage is applied from the electrostatic electrode power supply member 21 to the electrostatic electrode 5 via the connection member 19, and an electrostatic adsorption force (Coulomb force) is generated in the dielectric layer 11A of the base 3 so that a substrate such as a wafer is adsorbed on the substrate of the substrate 3. Mounting surface 9. Further, the upper end of the electrostatic electrode power supply member 21 may be directly connected to the electrostatic electrode 5 without passing through the connecting member 19. [Heating Electrode] The heating electrode 7 can also be obtained by coating and printing a conductive paste. The conductive adhesive contains a powder and a binder as tungsten or tungsten carbide. Further, as shown in Fig. 2, the heating electrode 7 is embedded in the lower side of the base member 3, specifically, on the lower side of the electrostatic actuator 5. Then, a receiving hole 17 extending upward from the lower φ 23 of the base 3 is formed, and the receiving hole is formed.
7066-8780-PF 9 200818383 17内配設有加熱電極用供 杜% ΛΑ L山 再1千A此加熱電極用供電構 件25的上鳊經由連接構件27而 電極用供電槿# U 連接加熱電極7。從加熱 电位用仏電構件25經由連接構件 -7 ^ ^ _ 丹丨卞“將電屋施加至加埶雷 極7,加熱電極7加熱並供 …電 A 4c I …、暴板載置面9所載置的 土板。尚且,加熱電極用供電構件25的上端 連接構件27而與加熱電極7直接連接。 不、、坐由 [靜電固持頭的製造方法] 明。本實施例的靜電固持加熱器的製造程序以圖3進行說 〈氧化鋁燒結體的製作以及煅燒〉 『首先,如圖3(a)所示,製作/為基體3的基板声29 以結體41’在該氧化銘燒結體41的表面(上面) 41的/塗料電膠43、45,藉此在氧化錢結體 41的表面形成靜電電極5,並 y 艾於裡面形成加熱電極7。 形成靜電電極5的導雷朦“ A ,, m$a * &電膠43,含有作為導電物質的鎢 (W)或疋碳化鎢(WC)的粉末與黏結劑。 因此’藉由對塗佈有導雷躜d 41進m ❿有*電骖43、45的氧化鋁燒結體 4i進仃緞燒,以使導電髁〇 Μ 43、45中的黏結劑發散到外界 米-中。煅燒是在惰性氣體或是 L T寺不會使導電物質 乳化的非氧化性環境中進行。 貝 〈氧化鋁粉體的加壓成形以及燒成〉 氧化㈣體的製成方法例如是如下所述。作為陶曼原 料物’使用尚純度(例如是 、 ^ 9·7%)的氧化鋁粉末以及作為 k結助劑的氧化鎂(Μ 〇) ’、、、 g J原科杈。在此陶瓷原料粉加入作為7066-8780-PF 9 200818383 17 is equipped with a heating electrode for the %% ΛΑ L mountain and then a thousand A. The upper electrode of the heating electrode power supply member 25 is connected to the heating electrode 7 via the connection member 27 for the electrode power supply 槿 #U . From the heating potential, the electric component 25 is applied to the twisted lightning pole 7 via the connecting member -7 ^ _ 丹 ,, the heating electrode 7 is heated and supplied with electricity A 4c I ..., the blasting surface 9 The earth plate to be placed is also connected to the heating electrode 7 by the upper end connecting member 27 of the heating electrode power supply member 25. However, the sitting is made of [electrostatic holding head manufacturing method]. The electrostatic holding heating of the present embodiment. The manufacturing procedure of the apparatus is as shown in Fig. 3. <Preparation and calcination of the alumina sintered body> First, as shown in Fig. 3(a), the substrate sound 29 made/based on the substrate 3 is sintered in the oxide body by the junction 41'. The surface of the body 41 (above) 41/coating paste 43 and 45, whereby the electrostatic electrode 5 is formed on the surface of the oxidized money body 41, and the heating electrode 7 is formed therein. The thunder of the electrostatic electrode 5 is formed. "A ,, m$a * & electrogel 43, contains powder and binder of tungsten (W) or tantalum tungsten carbide (WC) as a conductive material. Therefore, the alumina sintered body 4i coated with the thunder 躜d 41 and the 骖43, 45 is subjected to satin burning so that the adhesive in the conductive cesium 43 and 45 is diffused to the outside. M-中. Calcination is carried out in a non-oxidizing environment in which an inert gas or LT temple does not emulsify a conductive material. Shell <Pressure Forming and Firing of Alumina Powder> The method of producing the oxidized (tetra) body is as follows, for example. As the Taman raw material, alumina powder of a purity (for example, ^9.7%) and magnesium oxide (Μ?), which is a k-junction aid, are used. In this ceramic raw material powder is added as
7066-8780-PF 200818383 ==稀醇(PVA)、水、分散劑等,利用轉筒筛混合 攻疋㈣(例如:16小時),製作出漿料。在此’聚乙稀醇 的混合量較佳為2重量百分比(wt%)。將得到的 使用喷霧乾燥器噴霧乾燥,得到造粒的氧化鋁粉體。7 其-人,如圖3(b)所示,將氧化鋁粉體47收容在未圖 示的模具在該氧㈣粉體47上載置塗佈有前述導㈣ 43、45 &氧化銘燒結體4卜在該氧化銘燒結體上收容 氧化鋁粉體49。依此,在氧化鋁燒結體41的兩面側配置 氧化銘粉體47、49,以此狀態,如圖3(c)所示,將氧化銘 粉體47、49、氧化鋁燒結體41以壓力p加壓而形成氧化 ,成形體5卜其後在非氧化性氣體環境中進行加壓燒成。 藉由此加Μ燒成’能使氧仙成形體51成為氧化銘燒結 此後,以鑽石研粒對氧化鋁燒結體的裡面進行平面研 磨加工’以調整氧化㈣結體的厚度。然後,研磨氧化紹 燒結體的側面,並進行必要的開孔加卫,藉此完成靜電固 持加熱器1的基體3。 而且,於本實施型態中,藉由對氧化鋁粉體47、49預 先以450 C以上的溫度、在氧化環境進行鍛燒,使氧化銘 叔體47、49巾的黏結劑消散後,再用於成形體為佳。尚且, 煅燒的上限溫度較佳為14〇〇〜15〇(rc。高於i5〇(rc的話, 氧化鋁粉體47、49會產生伴隨著燒結而結合等的疑慮。 如依本發明的實施型態,能夠得到以下的效果。 1)由於作為介電層Π的部位是僅燒成一次氧化鋁粉7066-8780-PF 200818383 ==Diluted alcohol (PVA), water, dispersant, etc., mixed with a rotary screen (4) (for example, 16 hours) to prepare a slurry. Here, the blending amount of the polyethylene glycol is preferably 2% by weight (wt%). The obtained spray spray was dried using a spray dryer to obtain a granulated alumina powder. 7 as shown in Fig. 3(b), the alumina powder 47 is housed in a mold (not shown) and placed on the oxygen (tetra) powder 47. The above-mentioned guide (four) 43, 45 & The body 4 contains alumina powder 49 on the oxidized sintered body. In this state, the oxidized powders 47 and 49 are disposed on both sides of the alumina sintered body 41. In this state, as shown in Fig. 3(c), the oxidized powders 47 and 49 and the alumina sintered body 41 are pressurized. The p is pressurized to form oxidation, and the molded body 5 is then subjected to pressure firing in a non-oxidizing gas atmosphere. By this calcination, the oxygen fairy formed body 51 can be sintered by oxidation, and then the inside of the alumina sintered body is subjected to planar grinding processing by diamond grinding grains to adjust the thickness of the oxide (four) body. Then, the side surface of the sintered body was ground and subjected to necessary opening, thereby completing the electrostatically holding the base 3 of the heater 1. Further, in the present embodiment, the alumina powders 47 and 49 are calcined in an oxidizing atmosphere at a temperature of 450 C or higher in advance, and the binder of the oxidized uncle bodies 47 and 49 is dissipated, and then It is preferably used for a shaped body. Further, the upper limit temperature of the calcination is preferably 14 〇〇 15 15 〇 (rc. Above i5 〇 (rc, the alumina powders 47, 49 may cause agglomeration accompanying sintering, etc.). The type can obtain the following effects: 1) Since the portion which is the dielectric layer is only fired once alumina powder
7066-8780-PF 11 200818383 體49而形成的,因此結晶粒子不會肥大化。因此,介電層 11能夠保持高的體積電阻率,在作為庫侖式靜電固持加熱 器1使用時’提昇高溫時的基板的脫著應答性。 2) 以往基體3的作為介電層n的部位是藉由將氧化鋁 粉體49加壓成形後燒成而形成的。因此,在燒成過程中, 靜電電極5中的導電物質(鎢或碳化鎢)具有經由導電膠43 中的黏結劑擴散到氧化鋁粉體49中的疑慮。但是,由於本 _實施型態對印刷有導電膠的氧化铭燒結體41施加般燒,藉 由此煅燒以使導電膠43中的黏結劑發散並消失。依:,^ 電電極5中的導電物質不會擴散至氧化鋁粉體49中,能^ 防止介電層11的體積電阻率的降低。而且,在作為心式 靜電固持加熱器1使用時,於高溫時的體積電阻率高。因 此由於基板的脫著應答性提高,而非常適於作為靜電固 持加熱器1使用。 3) 於本實施型態中,在基體3配設有靜電電極5與加 _熱電極7。此處於基體3沿著上下方向形成有用以插通頂 2梢(lifter pin)的貫通孔。於此場合,對應於基體3的 貫通孔,亦必須在靜電電極5與加熱電極7另外設 孔。 β依照以往的技術’由於是將複數的氧化銘燒結體彼此 或是胚片加壓並使基體成形,靜電電極5與加熱電極7的 位置對合困難。例如是於兩電極5、7形成貫通孔的情形, 為了確保設置於基體3的貫通孔與設置於靜電電極5以及 .加熱電極7的貫通孔的絕緣距離,考慮到兩電極的孔位置7066-8780-PF 11 200818383 Formed by the body 49, the crystal particles are not enlarged. Therefore, the dielectric layer 11 can maintain a high volume resistivity and, when used as a Coulomb type electrostatic holding heater 1, the detachment resistance of the substrate when the temperature is raised. 2) The portion of the base 3 which is the dielectric layer n is formed by press-forming the alumina powder 49 and firing it. Therefore, in the firing process, the conductive substance (tungsten or tungsten carbide) in the electrostatic electrode 5 has a fear of diffusing into the alumina powder 49 via the binder in the conductive paste 43. However, since the present embodiment is applied to the oxidized sintered body 41 printed with the conductive paste, it is calcined to cause the adhesive in the conductive paste 43 to diverge and disappear. According to the following, the conductive material in the electric electrode 5 does not diffuse into the alumina powder 49, and the decrease in the volume resistivity of the dielectric layer 11 can be prevented. Further, when used as the core type electrostatic holding heater 1, the volume resistivity at a high temperature is high. Therefore, since the detachment resistance of the substrate is improved, it is very suitable for use as the electrostatic holding heater 1. 3) In the present embodiment, the base electrode 3 is provided with an electrostatic electrode 5 and a heat-adding electrode 7. This is formed in the base body 3 in the up and down direction to form a through hole for inserting a lifter pin. In this case, it is necessary to provide a separate hole in the electrostatic electrode 5 and the heating electrode 7 in correspondence with the through hole of the base 3. In accordance with the prior art, the pressure of the electrostatic electrode 5 and the heating electrode 7 is difficult because the plurality of oxidized sintered bodies or the green sheets are pressed and the substrate is molded. For example, in the case where the through holes are formed in the two electrodes 5 and 7, in order to secure the insulation distance between the through holes provided in the base 3 and the through holes provided in the electrostatic electrode 5 and the heating electrode 7, the hole positions of the two electrodes are considered.
7066-8780-PF 12 200818383 必須設定為較大。7066-8780-PF 12 200818383 Must be set to be larger.
的位置偏移,電極5、7的貫通孔的直經 亦即 大, 體41的表裡面印刷形成有靜電電極 電極5與加熱電極7的位置對合變j 之間的絕緣距離可以變為非常小而例 此靜電吸著力的分佈變得更為均勻, 禮、度’並提昇加熱器的均熱性。 4)以往,在氧化鋁燒結體的燒成過程中,靜電電極5 中所含的導電物質(w或wc)具有經由氧化鋁粉體49中的黏 結劑擴散的疑慮。此種情形下,介電層n的實際體積電阻 率降低,並且基板的脫著應答性降低,由於在介電層u的 厚度薄的情形會破壞絕緣,必須使介電層丨丨變厚。在介電 層11厚的情況下施加的電壓亦必須變高,在控制上有困 但是,如依本實施型態的話,由於對印刷有導電膠的 氧化銘燒結體施加煅燒,導電膠43内的黏結劑消散至外界 氣體中。依此,由於能夠防止導電物質經由黏結劑而於氧 化銘粉體49中擴散,介電層11的體積電阻率實際上提高, 脫著應答性提昇。而且,藉由此些,介電層11可以形成薄 的厚度而例如是〇 · 1〜〇 · 2mm,從而降低施加電壓。 5)而且,氧化鋁粉體47、49如以450°C以上的溫度在 氧化環境中進行锻燒的話,氧化銘粉體4 7、4 9中的黏結劑The positional deviation is such that the through-holes of the electrodes 5 and 7 are large, and the insulation distance between the position of the electrostatic electrode electrode 5 and the heating electrode 7 formed by the surface of the body 41 is extremely variable. Smaller, for example, the distribution of electrostatic attraction becomes more uniform, and the degree of ritual and degree enhances the soaking of the heater. 4) Conventionally, during the firing of the alumina sintered body, the conductive material (w or wc) contained in the electrostatic electrode 5 has a fear of being diffused by the binder in the alumina powder 49. In this case, the actual volume resistivity of the dielectric layer n is lowered, and the detachment resistance of the substrate is lowered. Since the dielectric layer u is thin in the case where the thickness is thin, it is necessary to make the dielectric layer 丨丨 thick. The voltage applied in the case where the dielectric layer 11 is thick must also be high, and it is difficult to control. However, according to this embodiment, since the oxidized sintered body printed with the conductive paste is subjected to calcination, the conductive paste 43 is inside. The binder dissipates into the outside air. Accordingly, since the conductive material can be prevented from diffusing into the oxide powder 49 via the binder, the volume resistivity of the dielectric layer 11 is actually increased, and the detachment resistance is improved. Moreover, by this, the dielectric layer 11 can be formed to have a thin thickness, for example, 〇 1 to 〇 2 mm, thereby reducing the applied voltage. 5) Moreover, if the alumina powders 47 and 49 are calcined in an oxidizing atmosphere at a temperature of 450 ° C or higher, the binder in the oxidized powders 4 7 and 49
7066-8780-PF 13 200818383 得以消散,藉由將此經由煅燒的氧化鋁粉體用於成形,能 夠更加的抑制導電膠43、45中的導電物質的擴散。 [實施例] 其次,使用實施例具體的說明本發明。 [實施例1] 首先,作為實施例1,在氧化鋁燒結體的兩面形成靜 電電極與加熱電極,在此氧化鋁燒結體的兩面側配置氧化 鋁粉體,並將此些的氧化鋁粉體以及氧化鋁燒結體加壓並7066-8780-PF 13 200818383 is dissipated, and by using the calcined alumina powder for forming, the diffusion of the conductive material in the conductive pastes 43, 45 can be more suppressed. [Examples] Next, the present invention will be specifically described using examples. [Example 1] First, as an example 1, an electrostatic electrode and a heating electrode were formed on both surfaces of an alumina sintered body, and alumina powder was disposed on both sides of the alumina sintered body, and the alumina powders were placed thereon. And the alumina sintered body is pressurized and
燒成。以下參照表1並進行詳細的說明。 表1 本發明例1 本發明例2 比較例1 比較例2 比較例3 介電層 粉體 粉體 燒結體 燒結體 粉體 支撐構件 燒結體+粉體 燒結體+粉體 燒結體+粉體 胚片+燒結體 燒結體+粉體 電極燒成溫度 450〇C 1000°C 未燒成 未燒成 未燒成 介電層中的結晶的平均粒徑 4/zm 4^111 12/im 12//m 4//m 介電層的體 積電阻 (Ω *cm) RT >1E+17 >1E+17 1E+16 1E+16 9E+16 100〇C 2E+16 8E+16 3E+14 3E+14 3E+15 200°C 1E+16 1E+16 1E+13 1E+13 1E+14 絕緣耐壓:1_(V) 18 20 21 21 14 WC擴散距離的平均值(//m) 150 100 280 280 280 WC擴散面積率(%) (850x300//m的斷面範圍) 0.25 0.2 0.4 0.4 0.4 脫著應答時間(sec) RT <1 <1 <1 <1 <1 100°C <1 <1 40 40 20 200°C 14 3 >60 >60 42 綜合評價 〇 〇 X x Δ 14Burnt. The following is a detailed description with reference to Table 1. Table 1 Inventive Example 1 Inventive Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Dielectric Layer Powder Powder Sintered Body Sintered Body Powder Support Member Sintered Body + Powder Sintered Body + Powder Sintered Body + Powder Embryo Sheet + sintered body sintered body + powder electrode firing temperature 450 〇 C 1000 ° C Unfired unfired unfired dielectric layer average particle size 4 / zm 4 ^ 111 12 / im 12 / / m 4//m Dielectric layer volume resistance (Ω *cm) RT >1E+17 >1E+17 1E+16 1E+16 9E+16 100〇C 2E+16 8E+16 3E+14 3E+ 14 3E+15 200°C 1E+16 1E+16 1E+13 1E+13 1E+14 Insulation withstand voltage: 1_(V) 18 20 21 21 14 Average value of WC diffusion distance (//m) 150 100 280 280 280 WC diffusion area ratio (%) (section range of 850x300//m) 0.25 0.2 0.4 0.4 0.4 off response time (sec) RT <1 <1 <1 <1 <1 <1 100 °C < ;1 <1 40 40 20 200°C 14 3 >60 >60 42 Comprehensive evaluation〇〇X x Δ 14
7066-8780-PF 200818383 〈本發明例1〉 首,製作作為基板層29的氧化鋁燒結體。氧化鋁 結體中的碳含量為。上⑽以下。而且,相對密度為98; 以上’純度為95%以上。尚纟,在燒結之際使用常慶或使 用熱壓皆可’本實施例則是使用熱壓以製造氧化銘燒結體。7066-8780-PF 200818383 <Example 1 of the present invention> First, an alumina sintered body as the substrate layer 29 was produced. The carbon content in the alumina structure is . Above (10). Further, the relative density is 98; the above 'purity is 95% or more. It is still possible to use Changqing or use hot pressing at the time of sintering. In this embodiment, hot pressing is used to manufacture an oxidized sintered body.
其次,在氧化鋁燒結體的表面以及裡面印刷靜電電極 以^加熱電極。具體而言是在氧化|g燒結體的兩面塗佈含 有碳化鎢(WC)的粉末以及黏結劑的漿料並乾燥。 然後,對塗佈有漿料的氧化鋁燒結體在非氧化性環境中 以450 C以上的溫度進行锻燒,以使裝料中的黏結劑消散。 然後,在模具内收容氧化鋁粉體,在該氧化鋁粉體上 載置前述氧化鋁燒結體,從該氧化鋁燒結體之上收容氧化 鋁粉體’於此狀態下,藉由將氧化鋁粉體以及氧化鋁燒結 體加屢成形,以製作氧化鋁成形體。 最後,使用熱壓(於溫度160(rc維持2小時),對此氧 化鋁成形體施加加壓燒成,以製作本發明例丨的基體。 〈本發明例2〉 相對於前述本發明例丨的基體,本發明例2是將前述 煅燒的溫度改變為l〇0(rc,除此煅燒溫度之外,以與本發 明例1相同的條件與方法製造。 〈比較例1〉 首先,使用熱壓製作成為介電層的氧化鋁燒結體。此 氧化鋁燒結體中的碳含量為0.lwt%以下。而且,相對密 度為9 8 %以上’純度為9 5 %以上。Next, an electrostatic electrode is printed on the surface and inside of the alumina sintered body to heat the electrode. Specifically, a slurry containing a powder of tungsten carbide (WC) and a binder is applied to both surfaces of the oxidized|g sintered body and dried. Then, the alumina sintered body coated with the slurry is calcined at a temperature of 450 C or higher in a non-oxidizing atmosphere to dissipate the binder in the charge. Then, the alumina powder is placed in the mold, and the alumina sintered body is placed on the alumina powder, and the alumina powder is accommodated from the alumina sintered body. In this state, alumina powder is used. The body and the alumina sintered body were repeatedly molded to produce an alumina molded body. Finally, the alumina shaped body was subjected to pressure baking at a temperature of 160 (rc for 2 hours) to prepare a substrate of the example of the present invention. <Example 2 of the present invention> Relative to the foregoing invention. In the present invention, the temperature of the calcination was changed to 10 〇 0 (rc, except for the calcination temperature, and was produced under the same conditions and method as in the inventive example 1. <Comparative Example 1> First, heat was used. An alumina sintered body which is a dielectric layer is formed by pressing. The carbon content of the alumina sintered body is 0.1% by weight or less, and the relative density is 98% or more and the purity is 95% or more.
7066-8780-PF 15 200818383 氧化鋁燒結體的下面印刷靜電電極。具 燒結體的下面塗佈含有碳化鎢(wc)的粉 料並乾燥。 μΑ 烕為支撐層的氧化鋁燒結體。藉由在此氧 化鋁k結體的上面塗人 1佈3有鎢(W)的粉末以及黏結劑的漿 枓亚乾爍,以形成加熱電極。7066-8780-PF 15 200818383 An electrostatic electrode is printed on the underside of the alumina sintered body. The powder containing tungsten carbide (wc) was applied to the underside of the sintered body and dried. μΑ 烕 is an alumina sintered body of the support layer. A heated electrode is formed by applying a powder of tungsten (W) and a slurry of a binder on top of the aluminum oxide k-junction.
八。人,將此2個氧化鋁燒結體使個別的靜電電極以及 加熱電、極彼=相對向’在此些的氧仙燒結體之間爽持氧 化鋁叔體’错由將此些的氧化鋁粉體以及氧化鋁燒結體加 壓成形’以製作氧化鋁成形體。 最後,使用熱壓(於溫度160(rc維持2小時),對此氧 化鋁成形體施加燒成,以製作比較例1的基體。 〈比較例2〉 相對於前述比較例丨,比較例2的不同點在於在氧化 銘燒結體之間夾持胚片,其他以與比較例i相同的條件盘Eight. In the case of the two alumina sintered bodies, the individual electrostatic electrodes and the heating electric, the polar ones are opposite to each other, and the alumina auxiliaries are held between the oxon oxide bodies. The powder and the alumina sintered body were press-formed to prepare an alumina molded body. Finally, the aluminum oxide molded body was fired by hot pressing (at a temperature of 160 (rc for 2 hours) to prepare a substrate of Comparative Example 1. <Comparative Example 2> Comparative Example 2 was compared with the above Comparative Example 2 The difference is that the embryo is held between the oxidized sintered bodies, and the other conditions are the same as those of Comparative Example i.
其次,在前述 體而言是在氧化鋁 末以及黏結劑的漿 方法製造。 η 〈比較例3〉 相對於前述本發明例1,比較例3的不同點是在於省 略了對形成有靜電電極與加熱電極的氧化鋁燒結體施加锻 燒的工程,其他以與本發明例1相同的條件與方法製造。 [評價] 比較前述本發明例2與比較例1的碳化鎢粒子的於*欠 程度。圖4為本發明例2的介電層與基板層邊界附近的^ 率為15 0倍的電子顯微鏡照相(SEM照相)。而且,圖5所 7066-8780-PF 16 200818383 示為比較例1的介電層與基板層邊界附近的倍率為倍 的電子顯微鏡照相(SEM照相)。 Θ 再者,圖6為將圖4二進位化(binarized)的畫像資 料,其繪示介電層中300 #mx85〇vm的斷面範圍的碳化鎢 粒子的擴散程度。圖7為將圖5二進位化的晝像資料,其 繪示基板層中300 //mx850 /zin的斷面範圍的碳化鎢粒子的 擴散程度。 如此些.的圖6、7所示’相對於本發明例2的碳化鎢粒 子幾乎沒有擴散,判明了比較例丨的碳化鎢粒子擴散的相 當多。此些可由表1所示的WC擴散面積率的資料明瞭。此 處WC的擴散距離以&wc的擴散面積率如下所定義。 WC擴散距離:在二進位化畫像資料中,從電極到離電 極最遠的碳化鎢粒子群的距離。 WC面積擴散率:在二進位化畫像資料中,在與電極鄰 接的30 0 // mx85〇 // m的斷面範圍的黑色部份的比例, 850 // m的長邊侧係與電極鄰接。藉由將wc的擴散面積率 設定為0.25%以下,即使在高溫狀態亦能夠得到使基板的 脫著應答時間大幅縮短的效果。 而且,如表1所示,由於本發明例丨、2的介電層中的 氧化鋁的粒徑較比較例i、2來得小,因此被認為介電層的 體積電阻率高。如上所述,如依本發明的話,藉由在1〇〇它 與200°C時的介電層的體積電阻率高,高溫時的基板的脫 著時間縮短,並且於綜合評價中,本發明例丨、2亦得到遠 優於比較例1〜3的良好結果。Secondly, in the above-mentioned body, it is produced by a slurry method of alumina and a binder. η <Comparative Example 3> The difference of Comparative Example 3 with respect to the above-described Example 1 of the present invention is that the engineering of applying calcination to the alumina sintered body in which the electrostatic electrode and the heating electrode are formed is omitted, and the present invention 1 Manufactured under the same conditions and methods. [Evaluation] The degree of deficiencies of the tungsten carbide particles of the second embodiment of the present invention and the comparative example 1 was compared. Fig. 4 is an electron microscope photograph (SEM photograph) of the vicinity of the boundary between the dielectric layer and the substrate layer of Example 2 of the present invention. Further, Fig. 5, 7066-8780-PF 16 200818383, is shown as an electron microscope photograph (SEM photograph) of a multiple of the dielectric layer and the substrate layer boundary of Comparative Example 1. Further, Fig. 6 is a portrait image of binarized Fig. 4, showing the degree of diffusion of tungsten carbide particles in the cross section of 300 #mx85〇vm in the dielectric layer. Fig. 7 is a view showing the image of the tungsten carbide particles in the range of 300 // mx850 /zin in the substrate layer. As shown in Figs. 6 and 7, the tungsten carbide particles of Example 2 of the present invention showed little diffusion, and it was found that the tungsten carbide particles of the comparative example had a relatively large amount of diffusion. These can be clarified by the WC diffusion area ratio shown in Table 1. The diffusion distance of WC at this point is defined by the diffusion area ratio of & wc as follows. WC Diffusion Distance: The distance from the electrode to the group of tungsten carbide particles farthest from the electrode in the binary image data. WC area diffusivity: In the binary image data, the ratio of the black portion of the section of 30 0 // mx85〇// m adjacent to the electrode, the long side of the 850 // m is adjacent to the electrode . By setting the diffusion area ratio of wc to 0.25% or less, the effect of greatly shortening the response time of the substrate can be obtained even in a high temperature state. Further, as shown in Table 1, since the particle diameter of alumina in the dielectric layers of Examples 2 and 2 of the present invention was smaller than that of Comparative Examples i and 2, it was considered that the dielectric layer had a high volume resistivity. As described above, according to the present invention, the volume resistivity of the dielectric layer at a temperature of 200 ° C is high, and the detachment time of the substrate at a high temperature is shortened, and in the overall evaluation, the present invention Example 2 and 2 also gave good results far superior to Comparative Examples 1 to 3.
7066-8780-PF 17 200818383 [實施例2] 於實&例2中,係對於實施例1的本發明例1的氧化 鋁燒結體適當的變更其煅燒溫度。具體而言如下述表2所 不,測定在鍛燒溫度設為室溫(亦即未進行燒成)、3〇(rc、 400 C、450 C以及1 000°C等情況時的wc粒子的擴散距離。 介電層的厚度為〇.4mm。 尚且,煅燒溫度對基板的2〇〇t的脫著應答時間如圖8 的關係圖所不,並且wc粒子的擴散距離對基板的2〇(rc的 響脫著應答時間如圖9的關係圖所示。7066-8780-PF 17 200818383 [Example 2] In the example 2 of the present invention, the baking temperature of the aluminum oxide sintered body of the inventive example 1 of Example 1 was appropriately changed. Specifically, as shown in the following Table 2, the wc particles in the case where the calcination temperature is room temperature (that is, the baking is not performed) and 3 〇 (rc, 400 C, 450 C, and 1 000 ° C) are measured. Diffusion distance The thickness of the dielectric layer is 〇.4 mm. Moreover, the response time of the calcination temperature to the substrate of 2〇〇t is not shown in the relationship diagram of Fig. 8, and the diffusion distance of the wc particles is 2〇 to the substrate ( The response time of rc is shown in the diagram of Figure 9.
表 ------ 電極燒成溫度(°c) --------- wc擴散距離的平均值(#m) 未 280 300 280 _ 400 200 450 150 —--- _J_000^ 100 wc擴散面積率(%) (850x300// m 的斷面i 1圍) 0.4 0.4 0.4 0. 25 J- U u 0. 2 脫著應答時間(sec) RT <1 <1 <1 <1_ —------ <1 10(TC 20 21 19 <1 < 1 200°C 42 43 41 14 r\ — 3 --^ L矸價」 如依照此些的圖8、9以及表2,判明了藉由將靜 極的燒成溫度設定為450〜1〇〇〇它,碳化鎢粒子的擴 積率小,並且基板的脫著時間亦能夠縮短。 ’、面 由上述實施例所能夠瞭解的,判明了如依本 话,能夠提供即使在高溫基板的脫著應答性亦、 支民的靜電Table ------ Electrode firing temperature (°c) --------- Average value of wc diffusion distance (#m) Not 280 300 280 _ 400 200 450 150 —--- _J_000^ 100 Wc diffusion area ratio (%) (circumference i 1 of 850x300 / / m) 0.4 0.4 0.4 0. 25 J- U u 0. 2 detachment response time (sec) RT <1 <1 <1 <;1_—------<1 10(TC 20 21 19 <1 < 1 200°C 42 43 41 14 r\ — 3 --^ L矸价” As shown in Figure 8, 9 and Table 2, it was found that by setting the firing temperature of the static electrode to 450 to 1 ,, the expansion ratio of the tungsten carbide particles is small, and the time of leaving the substrate can be shortened. What can be understood from the examples, it is found that, according to the present words, it is possible to provide the static electricity of the host even in the high-temperature substrate.
7066-8780-PF 18 200818383 固持加熱器。 【圖式簡單說明】 圖1所示為本發明的實施型態的靜電固持加熱器的平 面圖。 圖2所示為沿著圖1的a-A線的剖面圖。 圖3所示為本實施型態的靜電固持頭的基體製作流程 _ 的剖面圖,(a)為在氧化鋁燒結體的兩面塗佈導電膠的剖面 圖’(b)為在氧化鋁燒結體的兩面配置氧化鋁粉體的剖面 圖,(c)為將此些氧化鋁燒結體以及氧化鋁粉體加壓並燒成 的剖面圖。 圖4所示為本發明例2的介電層與基板層邊界附近的 倍率為1 50倍的電子顯微鏡照相(SEM照相)。 圖5所示為比較例丨的介電層與基板層邊界附近的倍 率為1 50倍的電子顯微鏡照相(SEM照相)。 _ 圖6為將圖4二進位化的晝像資料,其繪示介電層中 300 # mx850 μ m的斷面範圍的碳化鎢粒子的擴散程度。 圖7為將圖5二進位化的晝像資料,其繪示基板層中 300 /zmx850 # m的斷面範圍的碳化鎢粒子的擴散程度。 圖8所示為煅燒溫度與基板的2 〇 〇。〇的脫著應答時間 的關係圖。 圖9所不為WC粒子的擴散距離與基板的2〇〇〇c的脫著 應答時間的關係圖。7066-8780-PF 18 200818383 Hold the heater. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an electrostatic holding heater of an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line a-A of Fig. 1. Fig. 3 is a cross-sectional view showing the substrate manufacturing process of the electrostatic holding head of the present embodiment, wherein (a) is a cross-sectional view of the conductive paste applied to both sides of the alumina sintered body, and (b) is an alumina sintered body. A cross-sectional view of the alumina powder is disposed on both sides, and (c) is a cross-sectional view of pressing and firing the alumina sintered body and the alumina powder. Fig. 4 is a photomicrograph (SEM photograph) showing a magnification of 150 times in the vicinity of the boundary between the dielectric layer and the substrate layer of Example 2 of the present invention. Fig. 5 is a photomicrograph (SEM photograph) showing a magnification of 150 times in the vicinity of the boundary between the dielectric layer and the substrate layer of the comparative example. _ Figure 6 is an image of the image of the ternary of Figure 4, showing the degree of diffusion of tungsten carbide particles in the dielectric range of 300 # mx850 μm. Fig. 7 is a view showing the image of the tungsten carbide particles in the cross section of the substrate layer in the range of 300 / zm x 850 # m in the substrate layer. Figure 8 shows the calcination temperature and 2 〇 of the substrate. A diagram of the response time of the sputum. Fig. 9 is a graph showing the relationship between the diffusion distance of WC particles and the off-response time of 2 〇〇〇c of the substrate.
7066-8780-PF 19 200818383 【主要元件符號說明】 I :靜電固持加熱器 3 :基體 5 :靜電電極 7 :加熱電極 9 ··基體載置面(基體上面) II :介電層 :15 :收容孔 17 :收容孔 1 9 :連接構件 21 :靜電電極用供電構件 23 :下面(基體下面) 2 5 :加熱電極用供電構件 27 :連接構件 29 :基板層 31 :支撐層 41 :氧化鋁燒結體 43 :導電膠 45 :導電膠 47 :氧化鋁粉體 49 :氧化鋁粉體 51 :氧化銘成形體 P :壓力 207066-8780-PF 19 200818383 [Explanation of main component symbols] I : Electrostatic holding heater 3 : Substrate 5 : Electrostatic electrode 7 : Heating electrode 9 · Base mounting surface (upper substrate) II : Dielectric layer: 15 : Containment Hole 17 : accommodating hole 1 9 : connection member 21 : electrostatic electrode power supply member 23 : lower surface (underside of substrate) 2 5 : heating electrode power supply member 27 : connection member 29 : substrate layer 31 : support layer 41 : alumina sintered body 43 : Conductive adhesive 45 : Conductive adhesive 47 : Alumina powder 49 : Alumina powder 51 : Oxidized molded body P : Pressure 20
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JP4499431B2 (en) | 2003-07-07 | 2010-07-07 | 日本碍子株式会社 | Aluminum nitride sintered body, electrostatic chuck, conductive member, member for semiconductor manufacturing apparatus, and method for manufacturing aluminum nitride sintered body |
JP4278046B2 (en) * | 2003-11-10 | 2009-06-10 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | Electrostatic chuck with heater mechanism |
JP4744855B2 (en) | 2003-12-26 | 2011-08-10 | 日本碍子株式会社 | Electrostatic chuck |
JP4476701B2 (en) | 2004-06-02 | 2010-06-09 | 日本碍子株式会社 | Manufacturing method of sintered body with built-in electrode |
JP4467453B2 (en) * | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | Ceramic member and manufacturing method thereof |
JP4542485B2 (en) | 2004-12-14 | 2010-09-15 | 日本碍子株式会社 | Alumina member and manufacturing method thereof |
-
2007
- 2007-07-11 TW TW096125178A patent/TWI359473B/en active
- 2007-07-13 CN CN2007101360428A patent/CN101110382B/en active Active
- 2007-07-16 KR KR1020070071062A patent/KR100883155B1/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI602642B (en) * | 2013-01-21 | 2017-10-21 | Tokyo Electron Ltd | Bonding method, mounting table and substrate processing device |
Also Published As
Publication number | Publication date |
---|---|
CN101110382A (en) | 2008-01-23 |
KR20080008254A (en) | 2008-01-23 |
TWI359473B (en) | 2012-03-01 |
CN101110382B (en) | 2010-06-02 |
KR100883155B1 (en) | 2009-02-10 |
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