TWI359473B - Electrostatic chuck heater - Google Patents
Electrostatic chuck heater Download PDFInfo
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- TWI359473B TWI359473B TW096125178A TW96125178A TWI359473B TW I359473 B TWI359473 B TW I359473B TW 096125178 A TW096125178 A TW 096125178A TW 96125178 A TW96125178 A TW 96125178A TW I359473 B TWI359473 B TW I359473B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
1359473 九、發明說明： 【發明所屬之技術領域】 本發明是有關於庫侖式（c〇ul〇mb)的靜電固持加熱器。 【先前技術】 過去以來，在製造半導體等之際，有時會使用庫命式 靜電固持加熱器。 此靜電固持加熱器是由··陶竞構成的基體、設置於基 體内部的靜電電極與加熱電極、與此些靜電電極以及加熱 電極連接的供電構件、各種的周邊構件所構成（例如是請泉 照專利文獻…而且，基體的上面形成有用於載置晶圓等 基板的基板載置面。然後，由前述靜電電極至基板載置面 的部份形成有介電^，由靜電電極至加熱電極的部份形成 有基板層，由加熱電極至基板的下面形成有支撐層。 以下說明構成此靜電固持加熱器的基體的製i方法的 -例。尚1’此製造方法是將構成靜電固持加熱器的基板 上下顛倒配置而形成的。亦即是，一般的靜電固持加㈣ 由上側依序配置有介電層、基板層以及支擇層。作是 製造時介電層配置在最下側’在介電層之上形成基板層， 在基板層上形成支樓層以製作出基體後，將基體 配置。以下說明簡單的製造程序。1359473 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a coulometric electrostatic holding heater. [Prior Art] In the past, when a semiconductor or the like was manufactured, a reservoir-type electrostatic holding heater was sometimes used. The electrostatic holding heater is composed of a base body composed of ceramics, an electrostatic electrode provided inside the substrate, a heating electrode, a power supply member connected to the electrostatic electrode and the heating electrode, and various peripheral members (for example, a spring According to the patent document, a substrate mounting surface on which a substrate such as a wafer is placed is formed on the upper surface of the substrate. Then, a portion from the electrostatic electrode to the substrate mounting surface is formed with a dielectric electrode, and the electrostatic electrode is heated to the heating electrode. The substrate is formed with a substrate layer, and a support layer is formed from the heating electrode to the lower surface of the substrate. The following describes an example of the method for forming the substrate of the electrostatic holding heater. The manufacturing method is to constitute electrostatic holding heating. The substrate of the device is formed upside down. That is, the general electrostatic holding (4) is provided with a dielectric layer, a substrate layer and a selective layer from the upper side. The dielectric layer is disposed at the lowermost side during manufacture. A substrate layer is formed on the dielectric layer, and a support layer is formed on the substrate layer to form a substrate, and then the substrate is placed. A simple manufacturing procedure will be described below.
首先’準備作為介電層的板狀第！氧化鋁燒結 為基板層的胚片（greensheet)，以及作為支撑層 化紹燒結體。此些的第1氧化-堯結體以及第2氧化丄 7066-8780-PF 5 1359473 結體是藉由熱壓成形以製作的。 其次，將前述第1氧化紹燒結體上下顛倒配署 1氧化銘燒結體的裡面為上側，於此裡面二配置以使第 電極。然後，在靜電電極之上形成靜電 加熱電極，在該加熱電極的上側配置 形成 然後’將此些的第〗氧化銘燒結體 乳2=。 ，，·。 下方向邊加㈣以熱壓燒成使其-體化，夢此製 作基體。最後在基體裝設供電構件以及周邊 靜電固持加熱器。 几成 【專利文獻丨】特開平Π-1 2053號公報 【發明内容】 [發明所要解決的課題] 然而’前述習知的靜電固持加熱器中，由於構成介電 層以及支撐層的部位是經由將氧化銘燒結體2次燒成所形 成的，氧化鋁燒結體中的結晶粒子有粗大化的傾向。因此， 在作為庫侖式的靜電固持頭使用日寺，介電層的體積電阻率 降低，雖然在常溫顯示出沒有問題的基板的脫著應答性， 但是在高溫時具有基體上面所載置基板的脫著應答性惡化 的問題。 此處，本發明的目的為提供一種靜電固持加熱器，即 使在高溫時基板的脫著應答性亦優良。 [用以解決課題的手段] 為了達成前述目的’本發明的靜電固持加熱器包括氧First, prepare the plate shape as the dielectric layer! The alumina is sintered as a green sheet of the substrate layer, and as a support layer, the sintered body is sintered. The first oxide-ruthenium body and the second niobium oxide 7066-8780-PF 5 1359473 structure are produced by hot press forming. Next, the first oxide-sintered sintered body is turned upside down. The inside of the sintered body of the oxidized sintered body is the upper side, and the inside thereof is disposed to make the first electrode. Then, an electrostatic heating electrode is formed on the electrostatic electrode, and the upper side of the heating electrode is disposed to form and then "the first oxidized sintered body milk 2 =". ,,·. Adding (4) to the lower direction is performed by hot pressing, and it is made into a matrix. Finally, a power supply member and a peripheral electrostatic holding heater are mounted on the base. [Problems to be Solved by the Invention] However, in the above-described electrostatically held heater, since the portions constituting the dielectric layer and the support layer are via When the oxidized sintered body is fired twice, the crystal particles in the alumina sintered body tend to coarsen. Therefore, in the Coulomb-type electrostatic holding head, the volume resistivity of the dielectric layer is lowered, and the substrate has no problem of the detachment resistance of the substrate at normal temperature, but the substrate is placed on the substrate at a high temperature. The problem of deterioration in responsiveness. SUMMARY OF THE INVENTION An object of the present invention is to provide an electrostatic holding heater which is excellent in detachment resistance of a substrate even at a high temperature. [Means for Solving the Problem] In order to achieve the aforementioned object, the electrostatic holding heater of the present invention includes oxygen.
7066-8780-PF 6 化：燒結體所構成的基體、埋設於該基體上部側且含導電 物質的靜電電極、埋設於該基體下部側且含導電物質的加 熱電極，前述基體是由從靜電電極至基體上面的介電層、 從靜電電極至加熱電極的基板層、從加熱電極至基體下面 的支樓層所構成’纟中在構成前述基板層的氧化紹燒結體 的上面塗佈含黏結劑的導電膠且印刷靜電電極，並於下面 印刷加熱電極，此氧化鋁燒結體在煅燒之後，於在靜電電 極的上侧以及加熱電極的下側配置氧化絲體的狀態下， 將此些的氧化鋁粉體與氧化鋁燒結體加壓成形並加壓燒 成，藉此將前述彳電層中的靜電電極附近的前述導電物質 的擴散面積率設定為0.25%以下。 、 [發明效果] 本發明的靜電固持加熱器具有以下的效果。 ' 1)由於作為介電層的部位是僅燒成一次氧化鋁粉體而 形成的，因此能夠抑制結晶粒子的肥大化。因此，介電層 能夠保持高的體積電阻率，在作為庫余式靜電固持加熱器 使用時，提昇高溫時的基板的脫著應答性。 2)基體的作為介電層的部位是藉由將氧化链粉體加壓 成形後加壓燒成而形成的。因此’在燒成過程中，靜電電 極中的導電物質具有經由導電膠中的黏結劑擴散到氧化銘 粉體中的疑慮。但是，本發明之作為基板層的氧化鋁燒結 體在塗佈導電膠後施加煅燒，藉由此煅燒以將導電膠中的 黏結劑去除。依此，靜電電極中的導電物質不會擴散至氧 化鋁粕體中，能夠防止介電層的體積電阻率的降低。而且，7066-8780-PF 6 : a substrate composed of a sintered body, an electrostatic electrode embedded in the upper portion of the substrate and containing a conductive material, and a heating electrode embedded in a lower portion of the substrate and containing a conductive material, the substrate being composed of an electrostatic electrode The dielectric layer on the upper surface of the substrate, the substrate layer from the electrostatic electrode to the heating electrode, and the support layer from the heating electrode to the underside of the substrate are coated with a binder on the upper surface of the sintered body constituting the substrate layer. Conductive glue and printing an electrostatic electrode, and printing a heating electrode under the aluminum oxide sintered body, after calcination, in the state in which the oxide filament body is disposed on the upper side of the electrostatic electrode and the lower side of the heating electrode, the alumina is formed. The powder and the alumina sintered body are press-formed and pressure-fired, whereby the diffusion area ratio of the conductive material in the vicinity of the electrostatic electrode in the tantalum layer is set to 0.25% or less. [Effect of the Invention] The electrostatic holding heater of the present invention has the following effects. '1) Since the portion as the dielectric layer is formed by firing only the primary alumina powder, it is possible to suppress the enlargement of the crystal particles. Therefore, the dielectric layer can maintain a high volume resistivity, and when used as a reservoir-type electrostatic holding heater, the detachment resistance of the substrate at a high temperature is improved. 2) The portion of the substrate as the dielectric layer is formed by press-forming the oxidized chain powder and then press-baking. Therefore, in the firing process, the conductive material in the electrostatic electrode has a fear of diffusing into the oxidized powder through the binder in the conductive paste. However, the alumina sintered body as the substrate layer of the present invention is subjected to calcination after coating the conductive paste, thereby being calcined to remove the binder in the conductive paste. Accordingly, the conductive material in the electrostatic electrode does not diffuse into the aluminum oxide body, and the decrease in the volume resistivity of the dielectric layer can be prevented. and,
7066-8780-PF 7 加熱器使用時， ，因此非常適於 作為庫侖式靜電固持 的基板的脫著應答性 使用。 由於能夠提昇高溫 作為靜電固持加熱 時 器 【實施方式】 以下說明本發明的實施型態。 [靜電固持頭] 圖1所繪示為本發明的實施型 平面圖，圖2所給+ A ^ 電α持加熱器的 贫太路日 圖1的Α'Α線的剖面圖。 依本發明貫施型態的靜電固持加 不，包括氧化鋁燒結體所構 ° D圖卜2所 中的上部側的靜電電=構成的基體3、埋設在該基體3 電極5、埋設在基 熱電極7。於本實施型態中是以設=3中的下部側的加 固持加熱器來進行說明，但是 加熱電# 7的靜電When the 7066-8780-PF 7 heater is used, it is very suitable for the detachment of a substrate that is coulometric electrostatically held. Since the high temperature can be raised as an electrostatic holding heating timer [Embodiment] Hereinafter, an embodiment of the present invention will be described. [Electrostatic Holding Head] Fig. 1 is a plan view showing an embodiment of the present invention, and Fig. 2 is a cross-sectional view of the A' Α line of Fig. 1 given by the +A ^ electric α holding heater. According to the embodiment of the present invention, the electrostatic holding is not included, and the electrostatic charge on the upper side in the structure of the alumina sintered body is included. The base 3 is formed, the electrode 3 is embedded in the base 3, and the base is embedded in the base. Hot electrode 7. In the present embodiment, the holding heater is provided on the lower side of the setting = 3, but the static electricity of the heating #7 is described.
固持加熱器也能夠適用於本發明。“0熱電極7的靜電 [基體J 前述基體3如圖Ω 體3的上面(表面二;用=形成為略圓盤狀，基 面9。 載置日日圓等基板的晶圓載置 而且’從基體3中的越 位形成介電層u，從靜^ 基板載置面9的部 基板層I從加熱電極7 至加熱電極7的部份形成 層3卜此些的介電声η 基體下面23的部位形成支撐 為一體。 θ 、基板層29以及支撐層31係形成A holding heater can also be applied to the present invention. "0 Electrostatics of the hot electrode 7 [Base J] The base 3 is as shown on the upper surface of the Ω body 3 (surface 2; formed with a slightly disk shape by the =, base surface 9. The wafer on which the substrate such as the sundial is placed is placed and 'from A dielectric layer u is formed over the substrate 3, and a portion 3 of the dielectric substrate η from the heating electrode 7 to the heating electrode 7 is formed from the portion of the substrate layer I of the substrate mounting surface 9 to the lower surface of the substrate. The part forming support is integrated. θ, the substrate layer 29 and the support layer 31 are formed
7066-8780-PF7066-8780-PF
[靜電電極] 3的：2所不’在基體3的上部側埋設有直徑較基體 是η/:二圓板狀的靜電電極5。此靜電電極5含有鎢或 。靜電電極5可藉由印刷含有作為導電物質的鶴 屬粉末或碳化物的導電膠以形成。靜電電極的形狀並未 限定為圓板，亦可以形成為網孔狀、梳形狀、圓形狀等。 =，在介電層"中的靜電電極5的附近，如同後 電電極5所含的導電性物質 擴散面積率為。场…—鶴)的粒子的 且如圖2所不，在基體3的中心部形成從基體3 ^面23朝向上枝伸的收容孔15，隸容孔15内= 有靜電電極用供電構件2卜此靜電電極用供電構件心 上端經由連接構件j q而& 的 連接靜電電極5。從靜電電極用供 電構件21經由連接構件以將電塵施加至靜電電極5，在 :體3的介電層U產生靜電吸附力(庫命力)，以： 基板被吸附在基體3的基板載置面9 = 供電構件21的卜眭介π 肝电電極用 鳊亦可以不經由連接構件丨9 極5直接連接。 〃静電電 [加熱電極] 電腺tr電極7亦可以使用塗佈並印刷導電膠所得者。導 ,3有作為鎢或是碳化鶴的粉末與黏結劑。 而且’如圖2所示，加熱電極7埋設於基體3的 :其具體而言是配置於較靜電電極5更下側。然後= 從基體3的下面23朝向上方延伸的收…，該收二：[Electrostatic Electrode] 3: 2 No. On the upper side of the base 3, an electrostatic electrode 5 having a diameter smaller than that of the base is η/: two-disk shape. This electrostatic electrode 5 contains tungsten or . The electrostatic electrode 5 can be formed by printing a conductive paste containing a powder or carbide of a crane as a conductive substance. The shape of the electrostatic electrode is not limited to a circular plate, and may be formed into a mesh shape, a comb shape, a circular shape or the like. =, in the vicinity of the electrostatic electrode 5 in the dielectric layer, as the diffusion area ratio of the conductive material contained in the rear electrode 5. In the center of the base 3, a receiving hole 15 extending from the base 3^ face 23 toward the upper branch is formed in the center of the base 3, and the inside of the accommodating hole 15 is provided with the electrostatic electrode power supply member 2 The upper end of the power supply member for electrostatic electrodes is connected to the electrostatic electrode 5 via the connection member jq. Electrostatic force is applied to the dielectric layer U of the body 3 from the electrostatic electrode power supply member 21 via the connection member to apply the dust to the electrostatic electrode 5, so that the substrate is adsorbed on the substrate of the substrate 3 Setting surface 9 = The 鳊 π liver electric electrode for the power supply member 21 can also be directly connected without the connection member 丨 9 pole 5 . 〃 Electrostatic Electricity [Heating Electrode] The electric gland tr electrode 7 can also be obtained by coating and printing a conductive paste. Guide 3 has powder and binder as tungsten or carbonized crane. Further, as shown in Fig. 2, the heating electrode 7 is embedded in the base 3: specifically, it is disposed on the lower side of the electrostatic electrode 5. Then = from the lower surface 23 of the base 3 toward the top of the receiving ..., the second:
7066-8780-PF 9 内配叹有加熱電極用供 件25的上端缚件25此加熱電極用供電構 旳上^尨由連接構件27而 電極用供雷描 史《刀熱电極7。從加熱 用供電構件25經由連接構件 極7,加熱電極7加敎並…將電壓靶加至加熱電 基板。尚且’加熱電極斤載置的 連接椹姓97 铒忏的上鳊亦可以不經由 牛27而與加熱電極7直接連接。 [靜電固持頭的製造方法] 明。本實_的靜電固持加熱器的製造程序以圖3進行說 〈氧化紹燒結體的製作以及锻燒〉 的：先’如圖3(a)所示’製作作為基體"基板層Μ 、呂燒結體41，在該氧化銘燒結體41的表面（上面） ::ΓΓ(下面:塗佈導電膠43、45，藉此在氧化銘燒結體 、：面形成靜電電極5，並於裡面形成加熱電極7。 形成靜電電極5的導電膠43，含有作為導電物質的鶴 (W)或是碳化鶴（WC)的粉末與黏結劑。 、因此’藉由對塗佈有導電膠43、45的氧化銘燒結體 ^進行炮燒，以使導電膝43、45中的黏結劑發散到外界 乳體中。般燒是在惰性氣體或是真空中等不會使導電物質 氧化的非氧化性環境中進行。 〈氧化鋁粉體的加壓成形以及燒成〉 ；氧化鋁粉體的製成方法例如是如下所述。作為陶瓷原 料粉，使用高純度（例如是99· 7% )的氧化鋁粉末以及作為 燒結助劑的氧化鎂（Mg0)原料粉。在此陶竞原料粉加入作為The 7066-8780-PF 9 is provided with an upper end member 25 for the heating electrode supply member 25. The heating electrode is supplied with the power supply structure by the connecting member 27 and the electrode is used for the thunder. From the heating power supply member 25 via the connection member pole 7, the heating electrode 7 is twisted and ... the voltage target is applied to the heating electric substrate. Further, the upper crucible of the connection of the surname 97 载 which is placed on the heating electrode can be directly connected to the heating electrode 7 without passing through the bovine 27. [Method of Manufacturing Electrostatic Holding Head] The manufacturing procedure of the electrostatic holding heater of the present embodiment is as shown in Fig. 3: "Preparation and calcination of the sintered body of the oxide": first, as shown in Fig. 3 (a), as a substrate, "substrate layer", The sintered body 41 is on the surface (upper surface) of the oxidized sintered body 41: ΓΓ (below: the conductive pastes 43 and 45 are applied, whereby the electrostatic electrode 5 is formed on the surface of the oxidized sintered body, and heat is formed therein. Electrode 7. The conductive paste 43 forming the electrostatic electrode 5 contains a powder and a binder of a crane (W) or a carbonized crane (WC) as a conductive substance, and thus 'by oxidation of the conductive paste 43 and 45 coated thereon. The sintered body is fired to cause the bonding agent in the conductive knees 43, 45 to be dispersed into the external emulsion. The firing is performed in a non-oxidizing environment which does not oxidize the conductive material in an inert gas or a vacuum. <Pressure molding and firing of alumina powder> The method for producing the alumina powder is as follows, for example, as a ceramic raw material powder, high-purity (for example, 99·7%) alumina powder is used and Magnesium oxide (Mg0) raw material powder for sintering aid. They were added as a powder material
7066-8780-PF 黏結劑的聚乙烯醇（PVA) 設定時間(例如：16小睹、刀散劑等，利用轉筒筛混合 (PVA)的混合量較佳為2製作㈣料。在此’聚乙婦醇 使用喷隸燥n切㈣^M(wt%)。將得到的裝料 立次，_ 4到造粒的氧化紹粉體。 其久如圖3(b)所示，將 示的模具内，在該氧化_47==:容在未圖 43、45的氧化銘燒 上/置塗佈有别述導電勝 氧化鋁粉It 49。依此，在一 °亥乳化鋁燒結體41上收容 氧化銘粉體47、49,以此：：銘燒結體41的兩面側配置 粉體…9、氧化二^7066-8780-PF Adhesive polyvinyl alcohol (PVA) set time (for example: 16 hours, squeegee, etc., using a mix of rotating sieves (PVA) is preferably 2 to make (four) material. Here 'poly Ethyl alcohol is sprayed with dry squirting n (4) ^ M (wt%). The obtained charge is set up, _ 4 to granulated oxidized powder. It is shown in Figure 3 (b) for a long time. In the mold, the oxide _47==: is coated on the oxidized smelting/not shown in Figs. 43 and 45, and is coated with a conductive alumina powder It 49. Accordingly, the aluminum sintered body 41 is emulsified at one deg. The upper part of the oxidized powders 47 and 49 are placed, and the powder is placed on both sides of the sintered body 41.
銘成形體…-後在;氧：…加壓而形成氧化 藉由此加㈣後二=ι氣體環境中進行加嶋。 几取 此使虱化鋁成形體R 體。 坎办體51成為乳化鋁燒結 的裡面進行平面研 然後’研磨氧化銘 ，藉此完成靜電固 此後，以鑽石研粒對氧化鋁燒結體 磨加工，以調整氧化鋁燒結體的厚度。 燒結體的側面’並進行必要的開孔加工 持加熱器1的基體3。 先以贈 藉由對氧化紹粉體47、49預 t、體47 ^上的溫度、在氧化環境進行般燒，使氧化銘 私體47、49中的黏結劑消散後’再用於成形體為佳。尚且， 般燒的上限溫度較佳為_〜15Q(rc。高於i5G『c的話， 乳化紹粉體47、49會產生伴隨著燒結而結合等的疑慮。 如依本發明的實施型態，能夠得到以下的效果。 1)由於作為介電層11的部位是僅燒成—次氧化紹粉Ming shaped body...-after; oxygen: ... pressurization to form oxidation by adding (four) after the second = ι gas environment to carry out the twist. This is taken to make the aluminum body of the aluminum alloy body R body. The handle body 51 is immersed in the inside of the emulsified aluminum and subjected to planar grinding, and then the polishing is performed to complete the electrostatic solidification. Thereafter, the alumina sintered body is ground by a diamond granule to adjust the thickness of the alumina sintered body. The side surface ' of the sintered body' is subjected to necessary opening processing to hold the base 3 of the heater 1. First, by using the temperature of the oxidized powder 47, 49 pre-t, the body 47 ^, in the oxidizing environment, the binder in the oxidized crystals 47, 49 is dissipated and then used for the shaped body. It is better. Further, the upper limit temperature of the general calcination is preferably _~15Q (rc. If it is higher than i5G "c, the emulsified powders 47, 49 may be associated with sintering, etc., as in the embodiment of the present invention, The following effects can be obtained: 1) Since the portion as the dielectric layer 11 is only fired - the secondary oxidation powder
7066-8780-PF 11 丄咖473 9而开/成的，因此結晶粒子不會肥大化。因此，介電層 |。1此夠保持南的體積電阻率，在作為庫侖式靜電固持加熱 • 15 1使用時，提昇高溫時的基板的脫著應答性。 2)以往基體3的作為介電層u的部位是藉由將氧化鋁 粉體49加壓成形後燒成而形成的。因此，在燒成過程中， 靜電電極5中的導電物質（鶴或碳化鎢）具有經由導電踢43 中的黏’”。劑擴散到氧化鋁粉體49中的疑慮。但是，由於本 鲁實施型態對印刷有導電膠的氧化紹燒結體41施加锻燒，藉 由此锻燒以使導電膠43中的黏結劑發散並消失。依此，靜 電電極5中的導電物質不會擴散至氧化鋁粉體“中，能夠 防止介電層11的體積電阻率的降低。而且，在作為庫命式 靜電固持加熱器i使用時，於高溫時的體積電阻率高。因 此’由於基板的脫著應答性提高，而非常適於作為靜電固 持加熱器1使用。 3)於本實施型態中，在基體3配設有靜電電極5與加 熱電極7。此處於基體3沿著上下方向形成有用以插通頂 料梢（lifter pin)的貫通孔。於此場合，對應於基體3的 貫通孔’亦必須在靜電電極5與加熱電極7另外設置貫通7066-8780-PF 11 473 473 9 opened/made, so the crystal particles will not be enlarged. Therefore, the dielectric layer |. 1 This is enough to maintain the volume resistivity of the south, and when used as a Coulomb type electrostatic holding heating device, the detachment resistance of the substrate at a high temperature is improved. 2) The portion of the base 3 which is the dielectric layer u is formed by press-molding the alumina powder 49 and firing it. Therefore, during the firing process, the conductive substance (crane or tungsten carbide) in the electrostatic electrode 5 has a concern that the agent is diffused into the alumina powder 49 via the conductive kick 43. However, due to the implementation of the present invention The pattern is subjected to calcination to the sintered body 41 in which the conductive paste is printed, by which calcination is performed to cause the binder in the conductive paste 43 to diverge and disappear. Accordingly, the conductive substance in the electrostatic electrode 5 does not diffuse to oxidation. In the aluminum powder "the reduction in the volume resistivity of the dielectric layer 11 can be prevented. Further, when used as a reservoir-type electrostatic holding heater i, the volume resistivity at a high temperature is high. Therefore, since the detachment resistance of the substrate is improved, it is very suitable for use as the electrostatic holding heater 1. 3) In the present embodiment, the electrostatic electrode 5 and the heating electrode 7 are disposed on the base 3. This is formed in the base body 3 in the up and down direction to form a through hole for inserting a lifter pin. In this case, the through hole ' corresponding to the base 3 must be additionally provided through the electrostatic electrode 5 and the heating electrode 7.
依照以往的技術，由於是將複數的氧化銘燒結體彼此 或是胚片加壓並使基體成形，靜電電極5與加熱電極？的 位置對合困難Μ列如是於兩電極5、7形成貫通孔的情形， 為了確保設置於基體3的貫通孔與設置於靜電電極5以及 加熱電極7的貫通孔的絕緣距離，考慮到兩電極的孔位置 7066-8780-PF 12 1359473 的位置偏移，電極5、7的貫诵士， 貝逋孔的直控必須設定為較大。 亦即是，由於不能形成靜電電極 ， 电拽b或加熱電極7的區域變 大，靜電吸著力或發熱密度無法變得均勻❶ 但是，如依本實施形能的每 ~的話，由於在1個氧化紹燒結 體41的表裡面印刷形成有靜雷啻 ,w 7取，静電電極5與加熱電極7，靜電 電極5與加熱電極7的位置對合變為非常容易，電極彼此 之間的絕緣距離可以變為非常小而例如是Q 5_〜imm。因According to the prior art, is the electrostatic electrode 5 and the heating electrode pressed by pressurizing the plurality of oxidized sintered bodies or the green sheets and forming the substrate? In the case where the two electrodes 5 and 7 form a through hole, the positional difficulty alignment is ensured. In order to ensure the insulation distance between the through hole provided in the base 3 and the through hole provided in the electrostatic electrode 5 and the heating electrode 7, two electrodes are considered. The position of the hole is 7066-8780-PF 12 1359473, the position of the electrode 5, 7 is gentle, and the direct control of the hole must be set to be large. In other words, since the area of the electric sputum b or the heating electrode 7 becomes large, the electrostatic absorbing force or the heat generating density cannot be made uniform. The surface of the sintered body 41 is printed with a static thunder, w 7 is taken, the electrostatic electrode 5 and the heating electrode 7 are formed, and the positions of the electrostatic electrode 5 and the heating electrode 7 are easily combined, and the electrodes are insulated from each other. The distance can be made very small and is for example Q 5_~imm. because
此靜電吸著力的分佈變得更為均勻 — 並且挺升加熱電極的 雄度，並提昇加熱器的均熱性。 4)以往，在氧化鋁燒結體的燒成過程中，靜電電極日 中所含的導電物質（W或wc)具有經由氧化銘粉體49中的黏 結劑擴散的疑慮。此種情形下，介電層u的實際體積電阻 f降低，並且基板的脫著應答性降低，由於在介電層^的 厚度薄的情形會破壞絕緣，必須使介電層i〗變厚。在介電 層11厚的情況下施加的電壓亦必須變高，在控制上有困 難0 ^ 如依本貫施型態的活，由於對印刷有導電膠的 氧化鋁燒結體施加煅燒，導電膠43内的黏結劑消散至外界 氣體中。依此，由於能夠防止導電物質經由黏結劑而於氧 化铭私體49中擴散，介電層11的體積電阻率實際上提高， 脫著應答性提昇。而且，藉由此些，介電層11可以形成薄 的厚度而例如是0· 1〜〇. 2mm ’從而降低施加電壓。 5)而且’氧化鋁粉體47、49如以450°C以上的溫度在 氧化環境中進行煅燒的話，氧化鋁粉體47、49中的黏結劑This distribution of electrostatic attraction becomes more uniform - and the male of the heating electrode is raised and the soaking of the heater is increased. 4) Conventionally, during the firing of the alumina sintered body, the conductive material (W or wc) contained in the electrostatic electrode has a fear of being diffused by the binder in the oxidized powder 49. In this case, the actual volume resistance f of the dielectric layer u is lowered, and the detachment resistance of the substrate is lowered. Since the insulation is broken in the case where the thickness of the dielectric layer is thin, the dielectric layer i must be made thick. The voltage applied in the case where the dielectric layer 11 is thick must also become high, and there is difficulty in control. 0 ^ If the operation is performed according to the present embodiment, the conductive paste is applied to the alumina sintered body printed with the conductive paste. The binder in 43 dissipates into the outside air. Accordingly, since the conductive material can be prevented from diffusing into the oxidized body 49 via the binder, the volume resistivity of the dielectric layer 11 is actually increased, and the detachment resistance is improved. Further, by this, the dielectric layer 11 can be formed to have a thin thickness, for example, 0·1 to 〇. 2 mm ′ to lower the applied voltage. 5) and if the alumina powders 47 and 49 are calcined in an oxidizing atmosphere at a temperature of 450 ° C or higher, the binder in the alumina powders 47 and 49
7066-8780-PF 13 1359473 得以消散，藉由將此經由煅燒的氧化鋁粉體用於成形，能 夠更加的抑制導電膠43、45中的導電物質的擴散。 [實施例] 其次，使用實施例具體的說明本發明。 [實施例1] 首先，作為實施例1，在氧化鋁燒結體的兩面形成靜 電電極與加熱電極，在此氧化鋁燒結體的兩面側配置氧化 鋁粉體，並將此些的氧化鋁粉體以及氧化鋁燒結體加壓並7066-8780-PF 13 1359473 is dissipated, and by using the calcined alumina powder for forming, the diffusion of the conductive material in the conductive pastes 43, 45 can be more suppressed. [Examples] Next, the present invention will be specifically described using examples. [Example 1] First, as an example 1, an electrostatic electrode and a heating electrode were formed on both surfaces of an alumina sintered body, and alumina powder was disposed on both sides of the alumina sintered body, and the alumina powders were placed thereon. And the alumina sintered body is pressurized and
燒成。以下參照表1並進行詳細的說明。 表1 本發明例1 本發明例2 比較例1 比較例2 比較例3 介電層 粉體 粉體 燒結體 燒結體 粉體 支撐構件 燒結體+粉體 燒結體+粉體 燒結體+粉體 胚片+燒結體 燒結體+粉體 電極燒成溫度 450〇C 1000°C 未燒成 未燒成 未燒成 介電層中的結晶的平均粒徑 4/zm 4μπι 12/zm 12//m 介電層的體 . 積電阻 (Ω *cm) RT >1E+17 >1Ε+17 1E+16 1E+16 9E+16 100°C 2E+16 8Ε+16 3E+14 3E+14 3E+15 200°C 1E+16 1Ε+16 1E+13 1E+13 1E+14 絕緣封壓：lmm(V) 18 20 21 21 14 WC擴散距離的平均值（ym) 150 100 280 280 280 WC擴散面積率（％) (850x300的斷面範圍） 0. 25 0.2 0.4 0.4 0.4 脫著應答時間（sec) RT <1 <1 <1 <1 <1 100°C <1 <1 40 40 20 200°C 14 3 >60 >60 42 綜合評價 〇 〇 X X Δ 14Burnt. The following is a detailed description with reference to Table 1. Table 1 Inventive Example 1 Inventive Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Dielectric Layer Powder Powder Sintered Body Sintered Body Powder Support Member Sintered Body + Powder Sintered Body + Powder Sintered Body + Powder Embryo Sheet + sintered body sintered body + powder electrode firing temperature 450 〇 C 1000 ° C Unfired unfired unfired dielectric layer average particle size 4 / zm 4μπι 12 / zm 12 / / m Body of the electric layer. Product resistance (Ω *cm) RT >1E+17 >1Ε+17 1E+16 1E+16 9E+16 100°C 2E+16 8Ε+16 3E+14 3E+14 3E+15 200°C 1E+16 1Ε+16 1E+13 1E+13 1E+14 Insulation Sealing: lmm(V) 18 20 21 21 14 Average value of WC diffusion distance (ym) 150 100 280 280 280 WC diffusion area ratio ( %) (section range of 850x300) 0. 25 0.2 0.4 0.4 0.4 off response time (sec) RT <1 <1 <1 <1 <1 <1 100 °C <1 <1 40 40 20 200°C 14 3 >60 >60 42 Comprehensive evaluation〇〇XX Δ 14
7066-8780-PF 1359473 〈本發明例1〉 首先，製作作為基板層29的氧魅燒結體。氧化 結體中的碳含量為〇·〗wt%以下。 叩且’相對密度為 以上，純度為95%以上。尚且，在 "/〇 在燒結之際使用常壓或佞 用熱塵皆可，本/施例則是使用熱以製造氧切燒結體。7066-8780-PF 1359473 <Example 1 of the present invention> First, an oxygen oxidized sintered body as the substrate layer 29 is produced. The carbon content in the oxidized structure is 〇·〗 〖wt% or less. Further, the relative density is above, and the purity is 95% or more. In addition, it is possible to use atmospheric pressure or hot dust at the time of sintering. This embodiment uses heat to produce an oxygen-cut sintered body.
”人在氧化！S燒結體的表面以及裡面印刷靜電電極 以及加熱電極。具體而言是在氧化紹燒結體的兩面塗佈含 有碳化鎢（WC)的粉末以及黏結劑的漿料並乾燥。 然後，對塗佈有漿料的氧化銘燒結體在#氧化性環境中 以45吖以上的溫度進行烺燒’以使漿料中的黏結劑消散。 f後」在模具内收容氧化鋁粉體，在該氧化鋁粉體上 載置前述氧化鋁燒結體，從該氧化鋁燒結體之上收容氧化 鋁粉體’於此狀態下，藉由將氧化鋁粉體以及氧化鋁燒結 體加壓成形，以製作氧化鋁成形體。 最後，使用熱壓（於溫度16〇(rc維持2小時），對此氧 化銘成形體施加加M燒成，以製作本發明例i的基體。 〈本發明例2〉 相對於前述本發明例1的基體，本發明例2是將前述 、凡的rnt度改變為1 〇 〇 〇,除此般燒溫度之外，以與本發 明例1相同的條件與方法製造。 〈比較例1〉 首先’使用熱壓製作成為介電層的氧化鋁燒結體。此 氧化紹燒結體中的碳含量為0. lwt%以下。而且，相對密 度為98%以上，純度為95%以上。"The person prints the electrostatic electrode and the heating electrode on the surface and inside of the oxidized! S sintered body. Specifically, a slurry containing tungsten carbide (WC) powder and a binder is applied to both sides of the sintered body and dried. The oxidized sintered body to which the slurry is applied is simmered at a temperature of 45 Å or more in an oxidizing atmosphere to dissipate the binder in the slurry. After that, the alumina powder is contained in the mold. The alumina sintered body is placed on the alumina powder, and the alumina powder is accommodated from the alumina sintered body. In this state, the alumina powder and the alumina sintered body are pressure-molded to form An alumina molded body was produced. Finally, a hot press (at a temperature of 16 Torr (rc for 2 hours) was applied, and M-fired was applied to the oxidized molded body to prepare a substrate of the inventive example i. <Example 2 of the present invention> Relative to the foregoing inventive example In the case of the substrate of the first embodiment, the above-described rnt degree was changed to 1 Torr, and the same conditions and methods as in the first embodiment of the present invention were produced except for the above-described firing temperature. <Comparative Example 1> First The aluminum oxide sintered body which is a dielectric layer is formed by hot pressing. The carbon content in the sintered body is 0.1% by weight or less, and the relative density is 98% or more, and the purity is 95% or more.
7066-8780-PF 15 丄奶473 體而二θ在刖述氧化鋁燒結體的下面印刷靜電電極。具 末以；I是在氧化銘燒結體的下面塗佈含有碳化鶴（WC)的粉 及點結劑的漿料並乾燥。 然後， 化紹繞結體 料並乾燥， 製作成為支撐層的氧化鋁燒結體。藉由在此氧 的上面塗佈含有鎢（w)的粉末以及黏結劑的漿 以形成加熱電極。 加妖/、 將此2個氧化鋁燒結體使個別的靜電電極以及7066-8780-PF 15 The milk 473 body and the 2θ are printed on the underside of the alumina sintered body. I. A slurry containing a powder of carbonized crane (WC) and a spotting agent is applied to the underside of the oxidized sintered body and dried. Then, the wound body was melted and dried to prepare an alumina sintered body which became a support layer. A heating electrode is formed by coating a slurry containing tungsten (w) and a binder on the oxygen. Plus demon /, these two alumina sintered bodies make individual electrostatic electrodes and
…、電極彼此相對向，在此些的氧化鋁燒結體之間夾持氧 匕鋁争:體’藉由將此些的氧化鋁粉體以及氧化鋁燒結體加 垄成形，以製作氧化鋁成形體。 最後，使用熱壓（於溫度1 6〇(TC維持2小時），對此氧 化鋁成形體施加燒成，以製作比較例1的基體。 〈比較例2〉 相對於前述比較例1 ’比較例2的不同點在於在氧化 鋁燒結體之間夾持胚片，其他以與比較例1相同的條件與 方法製造。 〈比較例3〉 相對於前述本發明例1 ’比較例3的不同點是在於省 略了對形成有靜電電極與加熱電極的氧化鋁燒結體施加炮 燒的工程’其他以與本發明例1相同的條件與方法製造。 [評價] 比較前述本發明例2與比較例1的碳化鎢粒子的擴散 程度。圖4為本發明例2的介電層與基板層邊界附近的倍 率為150倍的電子顯微鏡照相（SEM照相）。而且，圖5所 7066-8780-PF 16 1359473 示為比較例i的介電層與基板層邊界附近的倍率為⑸倍 的電子顯微鏡照相（SEM照相）。 再者’圖6為將圖4二推. 進位化（blnarized)的畫像資 料’其繪示介電層中300/zmx850 "m的邮二》 g /z m的斷面範圍的碳化鎢 粒子的擴散程度。® 7為將圖5二進位化的晝像資料，盆 繪示基板層中3〇。請850…斷面範圍的碳化鎢粒子二 擴散程度。 #此些·的圖6、7所示，相對於本發明例2的碳化鎢粒 子幾乎沒有擴散，判明了比較例i的碳化鶴粒子擴散的相 當多。此些可由表1所示的WC擴散面積率的資料明瞭。此 處WC的擴散距離以及wc的擴散面積率如下所定義。 WC擴散距離：在二進位化晝像資料t，從電極到離電 極最遠的碳化鎢粒子群的距離。 WC面積擴散率：在二進位化畫像資料中，在與電極鄰 接的300 # mx850 ；z Π1的斷面範圍的黑色部份的比例， φ 85〇em的長邊側係與電極鄰接。藉由將wc的擴散面積率 设定為0. 25%以下，即使在高溫狀態亦能夠得到使基板的 脫著應答時間大幅縮短的效果。 而且，如表1所示，由於本發明例i、2的介電層中的 氧化鋁的粒徑較比較例1、2來得小，因此被認為介電層的 體積電阻率高《如上所述，如依本發明的話，藉由在丨〇〇它 與200C時的介電層的體積電阻率高，高溫時的基板的脫 者時門lis短並且於紅合#價中，本發明例〗、2亦得到遠 優於比較例1〜3的良好結果。..., the electrodes are opposed to each other, and the yttrium aluminum is sandwiched between the alumina sintered bodies: the body is formed by ridge forming the alumina powder and the alumina sintered body to form alumina forming body. Finally, the alumina shaped body was fired by hot pressing at a temperature of 16 Torr (TC for 2 hours) to prepare a substrate of Comparative Example 1. <Comparative Example 2> Comparative Example 1 Comparative Example 2 is different in that the green sheet is sandwiched between the alumina sintered bodies, and the other is produced under the same conditions and method as in Comparative Example 1. <Comparative Example 3> The difference from Comparative Example 1 of the present invention is that The engineering of applying the firing to the alumina sintered body in which the electrostatic electrode and the heating electrode were formed was omitted. Others were produced under the same conditions and methods as in Inventive Example 1. [Evaluation] The foregoing inventive examples 2 and 1 were compared. The degree of diffusion of the tungsten carbide particles. Fig. 4 is an electron microscope photograph (SEM photograph) at a magnification of 150 times in the vicinity of the boundary between the dielectric layer and the substrate layer of Example 2 of the present invention. Moreover, Fig. 5 shows that 7066-8780-PF 16 1359473 It is an electron microscope photograph (SEM photograph) at a magnification of (5) times in the vicinity of the boundary between the dielectric layer and the substrate layer of Comparative Example i. Further, Fig. 6 shows the image data of the blnarized image of Fig. 4 300/zmx850 in the dielectric layer "m's post 2" g /zm section of the range of tungsten carbide particles diffusion degree.® 7 is the image data of the carry-up of Figure 5, the basin shows 3 基板 in the substrate layer. Please 850... section In the range of the tungsten carbide particles, the degree of diffusion of the tungsten carbide particles is almost the same as that of the tungsten carbide particles of the second embodiment of the present invention, and it is found that the carbonized crane particles of the comparative example i diffuse considerably. These can be clarified by the WC diffusion area ratio shown in Table 1. Here, the diffusion distance of WC and the diffusion area ratio of wc are defined as follows. WC diffusion distance: in the binary image data t, from the electrode to the off electrode The distance of the far tungsten carbide particle group. WC area diffusivity: the ratio of the black part of the section of the 300 # mx850;z Π1 adjacent to the electrode in the binary image data, the length of φ 85〇em The side system is adjacent to the electrode. By setting the diffusion area ratio of wc to 0.25% or less, the effect of greatly shortening the response time of the substrate can be obtained even in a high temperature state. Oxidation in the dielectric layer of the inventive examples i, 2 The particle diameter of aluminum is smaller than that of Comparative Examples 1 and 2, and therefore it is considered that the volume resistivity of the dielectric layer is high as described above, as in the present invention, by the dielectric layer at the time of 丨〇〇 it and 200C. The volume resistivity was high, and the door lis of the substrate at the time of high temperature was short and the price of the invention was also better than that of the comparative examples 1 to 3 in the present invention.
7066-8780-PF 17 1359473 [實施例2 ] 於實施例2中，係對於實施例1的本發明例1的氧化 銘燒結體適當的變更其煅燒溫度。具體而言如下述表2所 示，測定在鍛燒溫度設為室溫（亦即未進行燒成）、30、 400°C、450°C以及1 00 0°C等情況時的WC粒子的擴散距離。 介電層的厚度為0. 4mm。 尚且’锻燒溫度對基板的20(TC的脫著應答時間如圖8 的關係圖所示，並且WC粒子的擴散距離對基板的2 〇 〇。〇的 脫著應答時間如圖9的關係圖所示。7066-8780-PF 17 1359473 [Example 2] In Example 2, the calcination temperature of the oxidized sintered body of Example 1 of Example 1 was appropriately changed. Specifically, as shown in the following Table 2, the WC particles were measured at the time when the calcination temperature was room temperature (that is, the firing was not performed), 30, 400 ° C, 450 ° C, and 100 ° C. Diffusion distance. 4毫米。 The thickness of the dielectric layer is 0. 4mm. Still, the calcination temperature is 20 for the substrate (the response time of the TC is shown in the relationship diagram of Fig. 8 and the diffusion distance of the WC particles is 2 〇〇 to the substrate. The response time of the 脱 is shown in Fig. 9 Shown.
[評價] 如依照此些的圖8、9以芬志9 9以及表2 ’判明了藉由將靜雷 極的燒成溫度設定為t 枝田肘静電電 w , G〜1GG(rC，碳化鎢粒子的擴散面 積率小，並且基板的脫荖 ）忙政面 脱者時間亦能夠縮短。 由上述實施例所能夠瞭解的旅 話，能夠提供即使在〗月了如依本發明的 在阿 >皿基板的脫著應答性亦優良[Evaluation] As shown in Figures 8 and 9 of this, it is determined by Fen Chi 9 9 and Table 2 ' that the firing temperature of the static thunder pole is set to t, the elbow electrostatic electricity, G~1GG (rC, carbonization). The diffusion area ratio of the tungsten particles is small, and the dislocation of the substrate can also be shortened. The travel that can be understood from the above embodiments can provide excellent detachment responsiveness to the substrate of the present invention even in the month of the present invention.
7066-8780-PF 18 固持加熱器β 【圖式簡單說明】7066-8780-PF 18 Holding heater β [Simple description]
圖1所示為本發明的實施型態的靜電固持加埶 面圖。 ·''、D T 圖2所示為沿著圖1的A-A線的剖面圖。 圖3所示為本實施型態的靜電固持頭的基體製作流 的吾ll pi ✓ • _，（a)為在氧化鋁燒結體的兩面塗佈導電膠的剖面 ° (b)為在氧化鋁燒結體的兩面配置氧化鋁粉體的剖面 圖’（c)為將此些氧化鋁燒結體以及氧化鋁粉體加壓並燒 的剖面圖。 ^圖4所示為本發明例2的介電層與基板層邊界附近的 倍率為150倍的電子顯微鏡照相（SEM照相）。 圖5所示為比較例丨的介電層與基板層邊界附近的倍 率為1 50倍的電子顯微鏡照相（SEM照相）。 圖6為將圖4二進位化的畫像資料，其繪示介電層中 3〇〇emX850 /zm的斷面範圍的碳化鎢粒子的擴散程度。 圖7為將圖5二進位化的晝像資料，其繪示基板層中 300 emx850 #m的斷面範圍的碳化鎢粒子的擴散程度。 圖8所示為煅燒溫度與基板的2〇〇〇c的脫著應答時間 的關係圖。 圖9所示為WC粒子的擴散距離與基板的2〇〇t的脫著 應答時間的關係圖。 7066-8780-PF 19 1359473 【主要元件符號說明】 I :靜電固持加熱器 3 :基體 5 :靜電電極 7 :加熱電極 9:基體載置面（基體上面） II :介電層 .15 :收容孔 • 17 :收容孔 1 9 :連接構件 21 :靜電電極用供電構件 23 :下面（基體下面） 2 5 .加熱電極用供電構件 27 :連接構件 29 :基板層 31 :支撐層 41 :氧化鋁燒結體 43 :導電膠 45 :導電膠 47 :氧化鋁粉體 49 :氧化鋁粉體 51 :氧化鋁成形體 P :壓力 20Fig. 1 is a view showing the electrostatic holding and twisting of the embodiment of the present invention. '', D T FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. Fig. 3 is a view showing the flow of the base of the electrostatic holding head of the embodiment of the present invention. _, (a) is a cross section of the conductive paste coated on both sides of the alumina sintered body. A cross-sectional view (c) of the alumina powder disposed on both surfaces of the sintered body is a cross-sectional view in which the alumina sintered body and the alumina powder are pressed and fired. Fig. 4 is a photomicrograph (SEM photograph) showing a magnification of 150 times in the vicinity of the boundary between the dielectric layer and the substrate layer of Example 2 of the present invention. Fig. 5 is a photomicrograph (SEM photograph) showing a magnification of 150 times in the vicinity of the boundary between the dielectric layer and the substrate layer of the comparative example. Fig. 6 is a view showing the image of the tungsten carbide particles in the cross section of the dielectric layer in the range of 3〇〇emX850 /zm in the dielectric layer. Fig. 7 is a view showing the image of the tungsten carbide particles in the cross-sectional range of 300 emx850 #m in the substrate layer. Fig. 8 is a graph showing the relationship between the calcination temperature and the release response time of 2 〇〇〇c of the substrate. Fig. 9 is a graph showing the relationship between the diffusion distance of WC particles and the 2 〇〇t off-response time of the substrate. 7066-8780-PF 19 1359473 [Explanation of main component symbols] I : Electrostatic holding heater 3 : Substrate 5 : Electrostatic electrode 7 : Heating electrode 9 : Substrate mounting surface (upper substrate) II : Dielectric layer . 15 : accommodating hole • 17 : receiving hole 1 9 : connecting member 21 : electrostatic electrode power supply member 23 : lower surface (under the base) 2 5 . heating electrode power supply member 27 : connecting member 29 : substrate layer 31 : support layer 41 : alumina sintered body 43 : Conductive adhesive 45 : Conductive adhesive 47 : Alumina powder 49 : Alumina powder 51 : Alumina shaped body P : Pressure 20
7066-8780-PF7066-8780-PF
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