TW200741857A - Plasma treating apparatus and plasma treating method - Google Patents

Plasma treating apparatus and plasma treating method

Info

Publication number
TW200741857A
TW200741857A TW096108643A TW96108643A TW200741857A TW 200741857 A TW200741857 A TW 200741857A TW 096108643 A TW096108643 A TW 096108643A TW 96108643 A TW96108643 A TW 96108643A TW 200741857 A TW200741857 A TW 200741857A
Authority
TW
Taiwan
Prior art keywords
plasma
plasma treating
chamber
atmosphere
treating apparatus
Prior art date
Application number
TW096108643A
Other languages
Chinese (zh)
Other versions
TWI374492B (en
Inventor
Yoshiyuki Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741857A publication Critical patent/TW200741857A/en
Application granted granted Critical
Publication of TWI374492B publication Critical patent/TWI374492B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Abstract

There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, and improving the resistance to plasma erosion of a coating formed on the surface of the member or the like in the corrosive gas atmosphere and preventing the occurrence of particles of a corrosion product even under a high plasma power. As a means therefore, in a plasma treating apparatus wherein a surface of a body to be treated in a chamber is subjected to a plasma treatment with an etching gas, at least surfaces of sites of the chamber itself exposing to the plasma atmosphere, or surfaces of a member or parts accommodated in the chamber are covered with a composite layer including a porous layer made from a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer.
TW096108643A 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method TW200741857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (en) 2006-03-20 2006-03-20 Plasma processing apparatus and plasma processing method

Publications (2)

Publication Number Publication Date
TW200741857A true TW200741857A (en) 2007-11-01
TWI374492B TWI374492B (en) 2012-10-11

Family

ID=38522573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108643A TW200741857A (en) 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method

Country Status (5)

Country Link
JP (1) JP4996868B2 (en)
KR (1) KR100864331B1 (en)
CN (1) CN100508116C (en)
TW (1) TW200741857A (en)
WO (1) WO2007108549A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI686864B (en) * 2016-12-20 2020-03-01 韓商韓國東海炭素股份有限公司 Parts for semiconductor manufacturing with deposition layer covering boundary line between layers
TWI718799B (en) * 2018-12-05 2021-02-11 日商京瓷股份有限公司 Component for plasma processing device and plasma processing device with same
TWI759981B (en) * 2019-11-27 2022-04-01 日商京瓷股份有限公司 Plasma resistant members, parts for plasma processing apparatus and plasma processing equipment

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JP2008266724A (en) * 2007-04-20 2008-11-06 Shin Etsu Chem Co Ltd Surface treatment method for thermal spray coating, and surface-treated thermal spray coating
JP2009301783A (en) * 2008-06-11 2009-12-24 Tokyo Electron Ltd Plasma processing apparatus, and plasma processing method
CN101740329B (en) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 Plasma processing method
JP5415853B2 (en) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 Surface treatment method
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
JP5879069B2 (en) * 2011-08-11 2016-03-08 東京エレクトロン株式会社 Method for manufacturing upper electrode of plasma processing apparatus
JP2013095973A (en) * 2011-11-02 2013-05-20 Tocalo Co Ltd Member for semiconductor manufacturing device
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP2012129549A (en) * 2012-03-06 2012-07-05 Tokyo Electron Ltd Electrostatic chuck member
JP5526364B2 (en) * 2012-04-16 2014-06-18 トーカロ株式会社 Method of modifying the surface of white yttrium oxide sprayed coating
US9257285B2 (en) * 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
CN104241069B (en) * 2013-06-13 2016-11-23 中微半导体设备(上海)有限公司 There is in plasma device parts and the manufacture method thereof of yittrium oxide clad
US10319568B2 (en) * 2013-11-12 2019-06-11 Tokyo Electron Limited Plasma processing apparatus for performing plasma process for target object
WO2017087474A1 (en) 2015-11-16 2017-05-26 Coorstek, Inc. Corrosion-resistant components and methods of making
JP6146841B1 (en) * 2016-08-04 2017-06-14 日本新工芯技株式会社 Ring electrode
CN109844166B (en) * 2016-11-02 2021-11-19 日本钇股份有限公司 Film-forming material and film
KR102384436B1 (en) * 2016-11-16 2022-04-12 쿠어스 테크, 인코포레이티드 Corrosion-resistant parts and manufacturing methods
CN108122805B (en) * 2016-11-29 2020-10-16 北京北方华创微电子装备有限公司 Degassing chamber and semiconductor processing equipment
KR102016615B1 (en) * 2017-09-14 2019-08-30 (주)코미코 Member Having Exellent Resistance Against Plasmacorrosion for Plasma Etching device and Method for Producing the Same
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
CN110512178B (en) * 2018-05-22 2021-08-13 北京北方华创微电子装备有限公司 Chamber liner, process chamber and semiconductor processing equipment
JP7097809B2 (en) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 Gas introduction structure, treatment equipment and treatment method

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JP2761112B2 (en) * 1991-02-21 1998-06-04 松下電工株式会社 Metal substrate with insulating layer and method of manufacturing the same
JP2971369B2 (en) * 1995-08-31 1999-11-02 トーカロ株式会社 Electrostatic chuck member and method of manufacturing the same
JPH104083A (en) * 1996-06-17 1998-01-06 Kyocera Corp Anticorrosive material for semiconductor fabrication
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
JP3510993B2 (en) * 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same
TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
KR100815038B1 (en) * 2000-12-12 2008-03-18 코니카 미놀타 홀딩스 가부시키가이샤 Method for Forming Thin Film, Article Having Thin Film, Optical Film, Dielectric Coated Electrode, and Plasma Discharge Processor
JP4051351B2 (en) * 2004-03-12 2008-02-20 トーカロ株式会社 Y2O3 spray-coated member excellent in thermal radiation and damage resistance and method for producing the same

Cited By (4)

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Publication number Priority date Publication date Assignee Title
TWI686864B (en) * 2016-12-20 2020-03-01 韓商韓國東海炭素股份有限公司 Parts for semiconductor manufacturing with deposition layer covering boundary line between layers
US11180855B2 (en) 2016-12-20 2021-11-23 Tokai Carbon Korea Co., Ltd. Semiconductor manufacturing component comprising deposition layer covering interlayer boundary and manufacturing method thereof
TWI718799B (en) * 2018-12-05 2021-02-11 日商京瓷股份有限公司 Component for plasma processing device and plasma processing device with same
TWI759981B (en) * 2019-11-27 2022-04-01 日商京瓷股份有限公司 Plasma resistant members, parts for plasma processing apparatus and plasma processing equipment

Also Published As

Publication number Publication date
CN101042996A (en) 2007-09-26
KR100864331B1 (en) 2008-10-17
JP2007251091A (en) 2007-09-27
CN100508116C (en) 2009-07-01
TWI374492B (en) 2012-10-11
JP4996868B2 (en) 2012-08-08
KR20070095210A (en) 2007-09-28
WO2007108549A1 (en) 2007-09-27

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