TW200725173A - Cleaning agent for photolithography and photoresist pattern forming method using the same - Google Patents

Cleaning agent for photolithography and photoresist pattern forming method using the same

Info

Publication number
TW200725173A
TW200725173A TW095133318A TW95133318A TW200725173A TW 200725173 A TW200725173 A TW 200725173A TW 095133318 A TW095133318 A TW 095133318A TW 95133318 A TW95133318 A TW 95133318A TW 200725173 A TW200725173 A TW 200725173A
Authority
TW
Taiwan
Prior art keywords
cleaning agent
photolithography
forming method
photoresist pattern
pattern forming
Prior art date
Application number
TW095133318A
Other languages
English (en)
Chinese (zh)
Inventor
Masaaki Yoshida
Kazumasa Wakiya
Katsumi Ohmori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200725173A publication Critical patent/TW200725173A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW095133318A 2005-09-09 2006-09-08 Cleaning agent for photolithography and photoresist pattern forming method using the same TW200725173A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005262286 2005-09-09
JP2005262284 2005-09-09
JP2005262285 2005-09-09
JP2005262283 2005-09-09

Publications (1)

Publication Number Publication Date
TW200725173A true TW200725173A (en) 2007-07-01

Family

ID=37835882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133318A TW200725173A (en) 2005-09-09 2006-09-08 Cleaning agent for photolithography and photoresist pattern forming method using the same

Country Status (2)

Country Link
TW (1) TW200725173A (ja)
WO (1) WO2007029767A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4692341B2 (ja) * 2006-03-14 2011-06-01 東京エレクトロン株式会社 保護膜除去装置、薬液の回収方法及び記憶媒体
CN107153329B (zh) * 2017-06-19 2020-08-11 江阴润玛电子材料股份有限公司 Tft行业铜制程用高回收率环保型剥离液

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591644B2 (ja) * 1987-03-11 1997-03-19 東京応化工業株式会社 ホトレジストの剥離液
JPS6460694A (en) * 1987-08-31 1989-03-07 Daikin Ind Ltd Azeotropic solvent composition
JPH024268A (ja) * 1988-06-22 1990-01-09 Asahi Glass Co Ltd レジスト剥離剤
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
JPH10316596A (ja) * 1997-05-15 1998-12-02 Nippon Zeon Co Ltd 弗素化飽和炭化水素
JP3409028B2 (ja) * 2000-04-28 2003-05-19 松下環境空調エンジニアリング株式会社 溶剤の再生方法及び装置
JP3263065B1 (ja) * 2001-02-14 2002-03-04 株式会社カネコ化学 洗浄用溶剤組成物
JP4304909B2 (ja) * 2002-04-03 2009-07-29 東ソー株式会社 洗浄剤及びそれを用いた洗浄方法
WO2004027518A2 (en) * 2002-09-19 2004-04-01 Arch Specialty Chemicals, Inc. A method for the removal of an imaging layer from a semiconductor substrate stack
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP4215537B2 (ja) * 2003-02-28 2009-01-28 日本カーリット株式会社 レジスト剥離剤
JP2005026338A (ja) * 2003-06-30 2005-01-27 Kobe Steel Ltd 微細構造体用洗浄液
JP4405767B2 (ja) * 2003-08-28 2010-01-27 ソニー株式会社 銀及び／又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置
JP2005239615A (ja) * 2004-02-25 2005-09-08 Nippon Zeon Co Ltd 弗素系溶剤の精製方法
KR20050110955A (ko) * 2004-05-20 2005-11-24 금호석유화학 주식회사 포토레지스트용 스트리퍼 조성물 및 이를 포토레지스트박리에 사용하는 방법

Also Published As

Publication number Publication date
WO2007029767A1 (ja) 2007-03-15

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