TW200723430A - Substrate holding member and substrate treatment device - Google Patents

Substrate holding member and substrate treatment device

Info

Publication number
TW200723430A
TW200723430A TW095109000A TW95109000A TW200723430A TW 200723430 A TW200723430 A TW 200723430A TW 095109000 A TW095109000 A TW 095109000A TW 95109000 A TW95109000 A TW 95109000A TW 200723430 A TW200723430 A TW 200723430A
Authority
TW
Taiwan
Prior art keywords
substrate holding
substrate
holding face
region
outer circumferential
Prior art date
Application number
TW095109000A
Other languages
Chinese (zh)
Other versions
TWI392043B (en
Inventor
Kaoru Oohashi
Toshihiro Hayami
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200723430A publication Critical patent/TW200723430A/en
Application granted granted Critical
Publication of TWI392043B publication Critical patent/TWI392043B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The susceptor 13 has a substrate holding face 20 smaller than a substrate W. The substrate holding face 20 is provided with an outer circumferential ring 21 and a plurality of projecting parts 22. In the central region R1 of the substrate holding face 20, the projecting parts 22 are uniformly arranged. In the intermediate region R2 of the substrate holding face 20, the projecting parts 22 are arranged in such a manner that the number per unit area is made smaller than that in the central region R1. In the outer circumferential region R3 of the substrate holding face 20, the projecting parts 22 and an outer circumferential ring 21 are arranged. In this way, the thermal conductivity in the intermediate region R2 of the substrate holding face 20 is made lower than that in the central region R1, and the thermal conductivity in the outer circumferential region R3 is made higher than that in the central region R1.
TW095109000A 2005-03-17 2006-03-16 A substrate holding member and a substrate processing apparatus TWI392043B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005076555A JP4869610B2 (en) 2005-03-17 2005-03-17 Substrate holding member and substrate processing apparatus

Publications (2)

Publication Number Publication Date
TW200723430A true TW200723430A (en) 2007-06-16
TWI392043B TWI392043B (en) 2013-04-01

Family

ID=37002890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109000A TWI392043B (en) 2005-03-17 2006-03-16 A substrate holding member and a substrate processing apparatus

Country Status (4)

Country Link
JP (1) JP4869610B2 (en)
KR (1) KR100735937B1 (en)
CN (1) CN100390957C (en)
TW (1) TWI392043B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
JP4533925B2 (en) * 2007-12-17 2010-09-01 財団法人高知県産業振興センター Film forming apparatus and film forming method
JP4533926B2 (en) * 2007-12-26 2010-09-01 財団法人高知県産業振興センター Film forming apparatus and film forming method
KR100943427B1 (en) * 2008-02-04 2010-02-19 주식회사 유진테크 Substrate supporting unit and substrate processing apparatus, manufacturing method of the substrate supporting unit
JP2009212344A (en) * 2008-03-05 2009-09-17 Nsk Ltd Work chuck, aligner, and process for producing flat panel
JP2009212345A (en) * 2008-03-05 2009-09-17 Nsk Ltd Work chuck, aligner, and process for producing flat panel
JP5243465B2 (en) * 2010-01-28 2013-07-24 パナソニック株式会社 Plasma processing equipment
JP5670235B2 (en) * 2011-03-24 2015-02-18 コバレントマテリアル株式会社 Electrostatic chuck
KR101310109B1 (en) * 2011-06-13 2013-09-23 주식회사 엠와이에스 Electrostatic Chuck formed pad in edge of ceramic body
JP6173936B2 (en) * 2013-02-28 2017-08-02 東京エレクトロン株式会社 Mounting table and plasma processing apparatus
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
CN104950581A (en) * 2015-07-02 2015-09-30 武汉华星光电技术有限公司 Stoving device and photoresist layer hardening method
KR101958636B1 (en) * 2016-10-31 2019-03-18 세메스 주식회사 Apparatus for supporting substrate, System for treating substrate, and Method for treating substrate
JP6818351B2 (en) * 2017-04-14 2021-01-20 サムコ株式会社 Wafer processing equipment
TWI658489B (en) * 2017-09-14 2019-05-01 南韓商吉佳藍科技股份有限公司 Plasma substrate processing device including a rotatable electrostatic chuck and substrate processing method using the same
CN115513028A (en) 2021-06-22 2022-12-23 东京毅力科创株式会社 Substrate processing apparatus and electrostatic chuck
WO2023022041A1 (en) * 2021-08-20 2023-02-23 東京エレクトロン株式会社 Electrostatic chuck, substrate support device, and substrate processing device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990169A (en) * 1988-11-14 1991-02-05 Broad Research Ice making method and/or apparatus
US5738165A (en) * 1993-05-07 1998-04-14 Nikon Corporation Substrate holding apparatus
JPH0718438A (en) * 1993-06-17 1995-01-20 Anelva Corp Electrostatic chuck device
US5885428A (en) * 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
US5841624A (en) * 1997-06-09 1998-11-24 Applied Materials, Inc. Cover layer for a substrate support chuck and method of fabricating same
US6215642B1 (en) * 1999-03-11 2001-04-10 Nikon Corporation Of Japan Vacuum compatible, deformable electrostatic chuck with high thermal conductivity
TW512645B (en) * 2000-07-25 2002-12-01 Ibiden Co Ltd Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002270681A (en) * 2001-03-07 2002-09-20 Anelva Corp Electrostatic attraction mechanism for processing substrate
US6563686B2 (en) * 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate

Also Published As

Publication number Publication date
KR20060101302A (en) 2006-09-22
CN1835203A (en) 2006-09-20
JP2006257495A (en) 2006-09-28
TWI392043B (en) 2013-04-01
CN100390957C (en) 2008-05-28
JP4869610B2 (en) 2012-02-08
KR100735937B1 (en) 2007-07-06

Similar Documents

Publication Publication Date Title
TW200723430A (en) Substrate holding member and substrate treatment device
TW200504800A (en) Showerhead assembly and apparatus for manufacturing semiconductor device having the same
TW200802797A (en) Electronic substrate, semiconductor device, and electronic device
TW200739788A (en) Susceptor and semiconductor manufacturing apparatus including the same
CA113465S (en) Showerhead
CA119341S (en) Goggle
CA119295S (en) Bottle with cap
TW200612512A (en) Substrate heating sapparatus
CA119308S (en) Electrical alternator
TW200735421A (en) LED semiconductor body and use of an LED semiconductor body
CA117843S (en) Bottle
ITMI20020306A0 (en) SUSCEPTOR EQUIPPED WITH RETENTATIONS AND EPITAXIAL REACTOR WHICH USES THE SAME
TW200735309A (en) Semiconductor element and manufaturing process thereof
CA115264S (en) Overhead cabinet
GB2450293A (en) Light treatment head
CA116218S (en) Laundry appliance
CA120079S (en) Bottle carrier
CA121224S (en) Ink ribbon cassette
CA117904S (en) Jar
CA115039S (en) Binoculars
CA105697S (en) Bottle holder with bottle
AU309683S (en) Massaging belt
ATE338232T1 (en) SEALING ELEMENT
CA101967S (en) Pacifier
CA108522S (en) Sink