TW200721242A - Method for processing metal member and apparatus for processing metal member - Google Patents

Method for processing metal member and apparatus for processing metal member

Info

Publication number
TW200721242A
TW200721242A TW095127130A TW95127130A TW200721242A TW 200721242 A TW200721242 A TW 200721242A TW 095127130 A TW095127130 A TW 095127130A TW 95127130 A TW95127130 A TW 95127130A TW 200721242 A TW200721242 A TW 200721242A
Authority
TW
Taiwan
Prior art keywords
electrode
metal member
processing metal
processing chamber
oxide film
Prior art date
Application number
TW095127130A
Other languages
Chinese (zh)
Inventor
Kunihiro Furuya
Yasunori Kumagai
Katsuya Okumura
Original Assignee
Tokyo Electron Ltd
Octec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Octec Inc filed Critical Tokyo Electron Ltd
Publication of TW200721242A publication Critical patent/TW200721242A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81014—Thermal cleaning, e.g. decomposition, sublimation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

Before bonding electrodes together, oxide films on the electrode surfaces are removed without using hydrochloric acid. Two chips respectively provided with an electrode are carried into a processing chamber, and respectively sucked onto an upper chuck and a lower chuck. Then, a nitrogen gas is introduced into the processing chamber, thereby creating a low oxygen atmosphere. After that, a hydrogen gas and a nitrogen gas are introduced into the processing chamber and each electrode is heated in the mixed gas atmosphere. Consequently, the oxide film on the surface of each electrode is reduced with hydrogen, and thus the oxide film is removed from the electrode surface.
TW095127130A 2005-07-25 2006-07-25 Method for processing metal member and apparatus for processing metal member TW200721242A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005214567 2005-07-25

Publications (1)

Publication Number Publication Date
TW200721242A true TW200721242A (en) 2007-06-01

Family

ID=37683341

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127130A TW200721242A (en) 2005-07-25 2006-07-25 Method for processing metal member and apparatus for processing metal member

Country Status (3)

Country Link
JP (1) JPWO2007013445A1 (en)
TW (1) TW200721242A (en)
WO (1) WO2007013445A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106486386A (en) * 2016-12-08 2017-03-08 天津大学 A kind of device and method of the pressure assisted sintering large-area nano silver paste of controlled atmosphere

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009004906A1 (en) * 2007-07-04 2009-01-08 Tokyo Electron Limited Substrate treatment method, substrate treatment apparatus, reducing agent sheet, and computer-readable storage medium
JP5263923B2 (en) * 2007-11-29 2013-08-14 国立大学法人 新潟大学 Diffusion bonding method and apparatus
CN104759751B (en) * 2015-04-15 2017-02-22 中国科学院福建物质结构研究所 Vacuum/atmosphere welding device and method capable of conducting continuous feeding work
US10497667B2 (en) 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617188B2 (en) * 1996-05-23 2005-02-02 富士電機機器制御株式会社 Soldering method
JP2002263852A (en) * 2001-03-09 2002-09-17 Shoichi Shimada Thermal diffusion bonding method for precision component
JPWO2003077307A1 (en) * 2002-03-11 2005-07-07 東洋鋼鈑株式会社 Electronic circuit device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106486386A (en) * 2016-12-08 2017-03-08 天津大学 A kind of device and method of the pressure assisted sintering large-area nano silver paste of controlled atmosphere

Also Published As

Publication number Publication date
WO2007013445A1 (en) 2007-02-01
JPWO2007013445A1 (en) 2009-02-05

Similar Documents

Publication Publication Date Title
WO2006130838A3 (en) Methods and apparatus for incorporating nitrogen in oxide films
TW200721242A (en) Method for processing metal member and apparatus for processing metal member
TW200625444A (en) Method and apparatus for forming silicon oxide film
TW200614372A (en) Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material
EP1286382A3 (en) Atmospheric pressure plasma treatment apparatus and method
TW200603329A (en) Methods and apparatus for reducing arcing during plasma processing
WO2009072348A1 (en) Bonding apparatus and bonding method
EP1617457A3 (en) Ultra high speed uniform plasma processing system
EP1655786A3 (en) Method of forming electrode for compound semiconductor device
WO2006036753A3 (en) Methods and apparatus for tuning a set of plasma processing steps
TW200610164A (en) Method and device for encapsulating electronic components with a conditioning gas
EP2278634A3 (en) Piezoelectric device
TW200715412A (en) Method and apparatus for forming metal film
SG136917A1 (en) Method for removing masking materials with reduced low-k dielectric material damage
TW200517524A (en) Processing apparatus and method
TW200634925A (en) Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
GB2451782A (en) Method and apparatus for laser processing
TW200802592A (en) Etching method and system, and computer readable recording medium
WO2008123431A1 (en) Plasma oxidation method, plasma processing apparatus and recording medium
TW200501254A (en) Method for removing silicon oxide film and processing apparatus
TW200511430A (en) Plasma processing apparatus and plasma processing method
TW200729311A (en) Liquid processing method and liquid processing apparatus
SG142223A1 (en) Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
TW200614384A (en) Impurity introducing method
ATE472172T1 (en) METHOD FOR PRODUCING A SILICON ELECTRODE FOR PLASMA REACTION CHAMBER