TW200712185A - Abrasive agent for semiconductor - Google Patents
Abrasive agent for semiconductorInfo
- Publication number
- TW200712185A TW200712185A TW095118884A TW95118884A TW200712185A TW 200712185 A TW200712185 A TW 200712185A TW 095118884 A TW095118884 A TW 095118884A TW 95118884 A TW95118884 A TW 95118884A TW 200712185 A TW200712185 A TW 200712185A
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive agent
- polishing
- semiconductor
- abrasive
- formula
- Prior art date
Links
- 239000003082 abrasive agent Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005498 polishing Methods 0.000 abstract 4
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 229910000420 cerium oxide Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005165768A JP2006339594A (ja) | 2005-06-06 | 2005-06-06 | 半導体用研磨剤 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200712185A true TW200712185A (en) | 2007-04-01 |
Family
ID=37498261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118884A TW200712185A (en) | 2005-06-06 | 2006-05-26 | Abrasive agent for semiconductor |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080086950A1 (zh) |
EP (1) | EP1890321A1 (zh) |
JP (1) | JP2006339594A (zh) |
KR (1) | KR20080012864A (zh) |
CN (1) | CN101189706A (zh) |
TW (1) | TW200712185A (zh) |
WO (1) | WO2006132055A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003281655A1 (en) * | 2002-07-22 | 2004-02-09 | Asahi Glass Company, Limited | Semiconductor abrasive, process for producing the same and method of polishing |
US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
EP2061070A4 (en) * | 2006-09-11 | 2010-06-02 | Asahi Glass Co Ltd | POLISHING AGENT FOR AN INTEGRATED SEMICONDUCTOR ELEMENTS, POLISHING METHOD AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR EQUIPMENT |
WO2008032681A1 (fr) * | 2006-09-13 | 2008-03-20 | Asahi Glass Co., Ltd. | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
KR101075491B1 (ko) | 2009-01-16 | 2011-10-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US8551887B2 (en) | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
JP4784694B1 (ja) * | 2010-05-27 | 2011-10-05 | 横浜ゴム株式会社 | 液状凝固剤およびタイヤパンクシール材セット |
MY164859A (en) * | 2010-09-08 | 2018-01-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
CN103155112B (zh) * | 2010-12-24 | 2016-10-12 | 日立化成株式会社 | 研磨液及使用该研磨液的基板的研磨方法 |
JP6051632B2 (ja) * | 2011-07-20 | 2016-12-27 | 日立化成株式会社 | 研磨剤及び基板の研磨方法 |
KR102198376B1 (ko) * | 2012-11-02 | 2021-01-04 | 로렌스 리버모어 내쇼날 시큐리티, 엘엘시 | 표면 활성의 손실없이 대전된 콜로이드의 응집을 방지하는 방법 |
CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
CN105778774A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
KR102514041B1 (ko) * | 2015-12-09 | 2023-03-24 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
JP6602720B2 (ja) * | 2016-04-04 | 2019-11-06 | グローバルウェーハズ・ジャパン株式会社 | 半導体基板の保護膜形成方法 |
CN107369618B (zh) * | 2017-07-07 | 2020-02-21 | 上海华虹宏力半导体制造有限公司 | 晶圆的平坦化方法 |
JPWO2019043890A1 (ja) * | 2017-08-31 | 2020-08-06 | 株式会社Sumco | 半導体ウェーハの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP2002198331A (ja) * | 2000-12-26 | 2002-07-12 | Jsr Corp | 研磨方法 |
EP1505639B1 (en) * | 2002-04-30 | 2008-08-06 | Hitachi Chemical Company, Ltd. | Polishing fluid and polishing method |
AU2003281655A1 (en) * | 2002-07-22 | 2004-02-09 | Asahi Glass Company, Limited | Semiconductor abrasive, process for producing the same and method of polishing |
JP2004123931A (ja) * | 2002-10-03 | 2004-04-22 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP2004273547A (ja) * | 2003-03-05 | 2004-09-30 | Kao Corp | 研磨速度選択比向上剤 |
-
2005
- 2005-06-06 JP JP2005165768A patent/JP2006339594A/ja not_active Withdrawn
-
2006
- 2006-05-12 KR KR1020077025527A patent/KR20080012864A/ko not_active Application Discontinuation
- 2006-05-12 WO PCT/JP2006/309578 patent/WO2006132055A1/ja active Application Filing
- 2006-05-12 CN CNA2006800195183A patent/CN101189706A/zh active Pending
- 2006-05-12 EP EP06732559A patent/EP1890321A1/en not_active Withdrawn
- 2006-05-26 TW TW095118884A patent/TW200712185A/zh unknown
-
2007
- 2007-12-06 US US11/951,540 patent/US20080086950A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006339594A (ja) | 2006-12-14 |
CN101189706A (zh) | 2008-05-28 |
US20080086950A1 (en) | 2008-04-17 |
EP1890321A1 (en) | 2008-02-20 |
WO2006132055A1 (ja) | 2006-12-14 |
KR20080012864A (ko) | 2008-02-12 |
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