TW200705647A - New dual port cell structure - Google Patents
New dual port cell structureInfo
- Publication number
- TW200705647A TW200705647A TW095114105A TW95114105A TW200705647A TW 200705647 A TW200705647 A TW 200705647A TW 095114105 A TW095114105 A TW 095114105A TW 95114105 A TW95114105 A TW 95114105A TW 200705647 A TW200705647 A TW 200705647A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- cell structure
- dual port
- new dual
- port cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/192,715 US7405994B2 (en) | 2005-07-29 | 2005-07-29 | Dual port cell structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200705647A true TW200705647A (en) | 2007-02-01 |
TWI358125B TWI358125B (en) | 2012-02-11 |
Family
ID=37674295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095114105A TWI358125B (en) | 2005-07-29 | 2006-04-20 | New dual port cell structure |
Country Status (3)
Country | Link |
---|---|
US (1) | US7405994B2 (zh) |
CN (1) | CN100481257C (zh) |
TW (1) | TWI358125B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI412037B (zh) * | 2008-12-05 | 2013-10-11 | Nat Univ Chung Cheng | Ten - transistor static random access memory architecture |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1893084A (zh) * | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置 |
JP5146447B2 (ja) * | 2006-04-11 | 2013-02-20 | ジンテス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 最小侵襲性固定システム |
US9099172B2 (en) | 2013-01-02 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-port SRAM connection structure |
US20090073297A1 (en) * | 2007-09-17 | 2009-03-19 | Micron Technology, Inc. | Twisted input pair of first gain stage for high signal integrity in cmos image sensor |
US8159852B2 (en) * | 2008-04-23 | 2012-04-17 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US8036022B2 (en) * | 2008-08-12 | 2011-10-11 | International Business Machines Corporation | Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure |
US8737107B2 (en) * | 2009-01-15 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuits and routing of conductive layers thereof |
US8144540B2 (en) * | 2009-04-14 | 2012-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two-port 8T SRAM design |
BRPI1010924A2 (pt) * | 2009-05-20 | 2019-01-08 | Synthes Gmbh | retração montada em pacientes |
US8411479B2 (en) * | 2009-07-23 | 2013-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuits, systems, and methods for routing the memory circuits |
US8189368B2 (en) * | 2009-07-31 | 2012-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cell structure for dual port SRAM |
US8009463B2 (en) * | 2009-07-31 | 2011-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cell structure for dual port SRAM |
US8482963B1 (en) * | 2009-12-02 | 2013-07-09 | Altera Corporation | Integrated circuits with asymmetric and stacked transistors |
US8942030B2 (en) | 2010-06-25 | 2015-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for SRAM cell circuit |
US8675397B2 (en) | 2010-06-25 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell structure for dual-port SRAM |
US8964455B2 (en) | 2010-03-10 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a SRAM circuit |
US8399931B2 (en) | 2010-06-30 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout for multiple-fin SRAM cell |
US8315084B2 (en) * | 2010-03-10 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully balanced dual-port memory cell |
US8212295B2 (en) | 2010-06-30 | 2012-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | ROM cell circuit for FinFET devices |
US8315081B2 (en) * | 2010-03-22 | 2012-11-20 | Qualcomm Incorporated | Memory cell that includes multiple non-volatile memories |
US8535318B2 (en) | 2010-04-23 | 2013-09-17 | DePuy Synthes Products, LLC | Minimally invasive instrument set, devices and related methods |
JP2012043486A (ja) * | 2010-08-13 | 2012-03-01 | Elpida Memory Inc | 半導体装置 |
WO2012166495A1 (en) | 2011-05-27 | 2012-12-06 | Synthes Usa, Llc | Minimally invasive spinal fixation system including vertebral alignment features |
US8576655B2 (en) | 2011-06-21 | 2013-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memories |
JP5705053B2 (ja) * | 2011-07-26 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8717798B2 (en) | 2011-09-23 | 2014-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout for semiconductor memories |
US8929154B2 (en) * | 2011-10-06 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout of memory cells |
US8406028B1 (en) | 2011-10-31 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Word line layout for semiconductor memory |
US9099199B2 (en) | 2012-03-15 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell and memory array |
US9275710B2 (en) * | 2013-08-30 | 2016-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional cross-access dual-port bit cell design |
US9455026B2 (en) * | 2014-11-18 | 2016-09-27 | Qualcomm Incorporated | Shared global read and write word lines |
US9911727B2 (en) | 2015-03-16 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strapping structure of memory circuit |
CN104795101B (zh) * | 2015-05-08 | 2018-04-03 | 中国科学院上海微***与信息技术研究所 | 半刷新机制的双端口静态随机存储器单元 |
CN105261391B (zh) * | 2015-09-30 | 2018-08-10 | 展讯通信(上海)有限公司 | 一种sram存储阵列 |
US10134737B2 (en) | 2015-12-29 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device with reduced-resistance interconnect |
TWI726869B (zh) | 2016-02-24 | 2021-05-11 | 聯華電子股份有限公司 | 靜態隨機存取記憶體的佈局結構及其製作方法 |
KR102514097B1 (ko) | 2016-08-03 | 2023-03-23 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
TWI713026B (zh) * | 2019-09-27 | 2020-12-11 | 修平學校財團法人修平科技大學 | 7t雙埠靜態隨機存取記憶體 |
TWI713027B (zh) * | 2019-09-27 | 2020-12-11 | 修平學校財團法人修平科技大學 | 具高讀取/寫入速度之雙埠靜態隨機存取記憶體 |
TWI713028B (zh) * | 2019-09-27 | 2020-12-11 | 修平學校財團法人修平科技大學 | 具高存取速度之雙埠靜態隨機存取記憶體 |
TWI717876B (zh) * | 2019-10-24 | 2021-02-01 | 修平學校財團法人修平科技大學 | 半導體記憶裝置 |
TWI716162B (zh) * | 2019-10-24 | 2021-01-11 | 修平學校財團法人修平科技大學 | 雙埠靜態隨機存取記憶體 |
TWI717877B (zh) * | 2019-10-24 | 2021-02-01 | 修平學校財團法人修平科技大學 | 具高讀取/寫入速度之7t靜態隨機存取記憶體 |
CN111508539B (zh) * | 2020-05-25 | 2023-07-18 | 上海华力集成电路制造有限公司 | 一种八管双端口静态随机存取存储器及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5843816A (en) | 1997-07-28 | 1998-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated self-aligned butt contact process flow and structure for six transistor full complementary metal oxide semiconductor static random access memory cell |
US5973985A (en) | 1998-08-11 | 1999-10-26 | Stmicroelectronics, Inc. | Dual port SRAM cell having pseudo ground line or pseudo power line |
JP3381698B2 (ja) * | 2000-02-04 | 2003-03-04 | 日本電気株式会社 | 半導体記憶装置 |
US6370078B1 (en) * | 2000-03-14 | 2002-04-09 | Lsi Logic Corporation | Way to compensate the effect of coupling between bitlines in a multi-port memories |
JP4885365B2 (ja) | 2000-05-16 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20030048256A1 (en) * | 2001-09-07 | 2003-03-13 | Salmon Peter C. | Computing device with roll up components |
JP2003218238A (ja) | 2001-11-14 | 2003-07-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6498758B1 (en) * | 2002-01-16 | 2002-12-24 | Lsi Logic Corporation | Twisted bitlines to reduce coupling effects (dual port memories) |
JP2004158802A (ja) * | 2002-11-08 | 2004-06-03 | Renesas Technology Corp | 半導体記憶装置 |
KR100468780B1 (ko) | 2002-12-18 | 2005-01-29 | 삼성전자주식회사 | 더블 포트 반도체 메모리 장치 |
KR100526884B1 (ko) | 2003-08-25 | 2005-11-09 | 삼성전자주식회사 | 듀얼 포트 에스램의 레이아웃 구조 및 그에 따른 형성방법 |
US7023056B2 (en) * | 2003-11-26 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell structure |
US7319602B1 (en) * | 2004-07-01 | 2008-01-15 | Netlogic Microsystems, Inc | Content addressable memory with twisted data lines |
US7443747B2 (en) * | 2004-08-09 | 2008-10-28 | Integrated Device Technology, Inc. | Memory array bit line coupling capacitor cancellation |
-
2005
- 2005-07-29 US US11/192,715 patent/US7405994B2/en active Active
-
2006
- 2006-04-20 TW TW095114105A patent/TWI358125B/zh active
- 2006-05-22 CN CNB2006100813784A patent/CN100481257C/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI412037B (zh) * | 2008-12-05 | 2013-10-11 | Nat Univ Chung Cheng | Ten - transistor static random access memory architecture |
Also Published As
Publication number | Publication date |
---|---|
TWI358125B (en) | 2012-02-11 |
US7405994B2 (en) | 2008-07-29 |
CN100481257C (zh) | 2009-04-22 |
US20070025132A1 (en) | 2007-02-01 |
CN1905063A (zh) | 2007-01-31 |
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