TW200703461A - Glass-based semiconductor on insulator structures and methods of making same - Google Patents
Glass-based semiconductor on insulator structures and methods of making sameInfo
- Publication number
- TW200703461A TW200703461A TW095112767A TW95112767A TW200703461A TW 200703461 A TW200703461 A TW 200703461A TW 095112767 A TW095112767 A TW 095112767A TW 95112767 A TW95112767 A TW 95112767A TW 200703461 A TW200703461 A TW 200703461A
- Authority
- TW
- Taiwan
- Prior art keywords
- methods
- glass
- based semiconductor
- making same
- insulator structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249978—Voids specified as micro
- Y10T428/24998—Composite has more than two layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249981—Plural void-containing components
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67117705P | 2005-04-13 | 2005-04-13 | |
US11/159,889 US7410883B2 (en) | 2005-04-13 | 2005-06-23 | Glass-based semiconductor on insulator structures and methods of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200703461A true TW200703461A (en) | 2007-01-16 |
Family
ID=37109064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095112767A TW200703461A (en) | 2005-04-13 | 2006-04-10 | Glass-based semiconductor on insulator structures and methods of making same |
Country Status (3)
Country | Link |
---|---|
US (2) | US7410883B2 (zh) |
TW (1) | TW200703461A (zh) |
WO (1) | WO2006112995A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111052306A (zh) * | 2017-09-07 | 2020-04-21 | 苏州晶湛半导体有限公司 | 衬底及其制备方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7767541B2 (en) * | 2005-10-26 | 2010-08-03 | International Business Machines Corporation | Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods |
US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
US20070277875A1 (en) * | 2006-05-31 | 2007-12-06 | Kishor Purushottam Gadkaree | Thin film photovoltaic structure |
WO2007142865A2 (en) * | 2006-05-31 | 2007-12-13 | Corning Incorporated | Thin film photovoltaic structure and fabrication |
US20070277874A1 (en) * | 2006-05-31 | 2007-12-06 | David Francis Dawson-Elli | Thin film photovoltaic structure |
US20080070340A1 (en) * | 2006-09-14 | 2008-03-20 | Nicholas Francis Borrelli | Image sensor using thin-film SOI |
US7687360B2 (en) * | 2006-12-22 | 2010-03-30 | Spansion Llc | Method of forming spaced-apart charge trapping stacks |
US20100314804A1 (en) * | 2007-08-31 | 2010-12-16 | Antonio Vallera | Method for the production of semiconductor ribbons from a gaseous feedstock |
US8217498B2 (en) * | 2007-10-18 | 2012-07-10 | Corning Incorporated | Gallium nitride semiconductor device on SOI and process for making same |
KR101058105B1 (ko) * | 2009-04-06 | 2011-08-24 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
KR101127574B1 (ko) * | 2009-04-06 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
DE102009042886A1 (de) | 2009-09-24 | 2011-05-26 | Schott Ag | Verfahren zur Herstellung einer Solarzelle oder eines Transistors mit einer kristallinen Silizium-Dünnschicht |
KR101145074B1 (ko) * | 2010-07-02 | 2012-05-11 | 이상윤 | 반도체 기판의 제조 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US8921841B2 (en) * | 2012-05-09 | 2014-12-30 | Samsung Corning Precision Materials Co., Ltd. | Porous glass substrate for displays and method of manufacturing the same |
US20140264456A1 (en) * | 2013-03-15 | 2014-09-18 | Semiconductor Components Industries, Llc | Method of forming a high electron mobility semiconductor device |
US9327472B1 (en) * | 2013-07-19 | 2016-05-03 | Integrated Photovoltaics, Inc. | Composite substrate |
CN104779265B (zh) | 2014-01-14 | 2020-07-07 | 松下电器产业株式会社 | 发光装置 |
FR3024587B1 (fr) * | 2014-08-01 | 2018-01-26 | Soitec | Procede de fabrication d'une structure hautement resistive |
CN105589587B (zh) * | 2014-10-21 | 2018-10-26 | 宸鸿科技(厦门)有限公司 | 透明复合基板与其制备方法及触控面板 |
CN105702725B (zh) * | 2014-11-27 | 2018-12-11 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN105789301B (zh) * | 2014-12-25 | 2018-09-11 | 中国科学院微电子研究所 | 鳍式场效应晶体管、鳍结构及其制造方法 |
US10032870B2 (en) * | 2015-03-12 | 2018-07-24 | Globalfoundries Inc. | Low defect III-V semiconductor template on porous silicon |
JP2020515033A (ja) | 2016-12-16 | 2020-05-21 | エルファー エルエルシー | 多孔質炭化ケイ素構造を製造およびエッチングするための方法 |
DE102019108754A1 (de) * | 2019-03-06 | 2020-09-10 | Infineon Technologies Ag | Halbleitervorrichtung mit einem porösen bereich, waferverbundstruktur und verfahren zum herstellen einerhalbleitervorrichtung |
US20230127556A1 (en) * | 2021-10-22 | 2023-04-27 | Infineon Technologies Ag | Manufacturing and reuse of semiconductor substrates |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3352340B2 (ja) | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
JP3257580B2 (ja) | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
JP3381443B2 (ja) | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
US6107213A (en) | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
JP3250722B2 (ja) | 1995-12-12 | 2002-01-28 | キヤノン株式会社 | Soi基板の製造方法および製造装置 |
SG55413A1 (en) | 1996-11-15 | 1998-12-21 | Method Of Manufacturing Semico | Method of manufacturing semiconductor article |
US6143628A (en) | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
US6376337B1 (en) | 1997-11-10 | 2002-04-23 | Nanodynamics, Inc. | Epitaxial SiOx barrier/insulation layer |
CN1249531A (zh) | 1998-09-04 | 2000-04-05 | 佳能株式会社 | 半导体衬底的制造工艺 |
US6410436B2 (en) * | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
JP2001284622A (ja) | 2000-03-31 | 2001-10-12 | Canon Inc | 半導体部材の製造方法及び太陽電池の製造方法 |
JP2004134672A (ja) * | 2002-10-11 | 2004-04-30 | Sony Corp | 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置 |
US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
-
2005
- 2005-06-23 US US11/159,889 patent/US7410883B2/en not_active Expired - Fee Related
-
2006
- 2006-03-15 WO PCT/US2006/009410 patent/WO2006112995A2/en active Application Filing
- 2006-04-10 TW TW095112767A patent/TW200703461A/zh unknown
-
2008
- 2008-06-27 US US12/215,517 patent/US20080286539A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111052306A (zh) * | 2017-09-07 | 2020-04-21 | 苏州晶湛半导体有限公司 | 衬底及其制备方法 |
CN111052306B (zh) * | 2017-09-07 | 2023-12-15 | 苏州晶湛半导体有限公司 | 衬底及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006112995A3 (en) | 2007-05-24 |
US7410883B2 (en) | 2008-08-12 |
WO2006112995A2 (en) | 2006-10-26 |
US20060234477A1 (en) | 2006-10-19 |
US20080286539A1 (en) | 2008-11-20 |
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