TW200640013A - Thin film transistor panel - Google Patents

Thin film transistor panel

Info

Publication number
TW200640013A
TW200640013A TW095106497A TW95106497A TW200640013A TW 200640013 A TW200640013 A TW 200640013A TW 095106497 A TW095106497 A TW 095106497A TW 95106497 A TW95106497 A TW 95106497A TW 200640013 A TW200640013 A TW 200640013A
Authority
TW
Taiwan
Prior art keywords
thin film
transparent
film transistor
transistor panel
film transistors
Prior art date
Application number
TW095106497A
Other languages
English (en)
Other versions
TWI318797B (en
Inventor
Hiromitsu Ishii
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of TW200640013A publication Critical patent/TW200640013A/zh
Application granted granted Critical
Publication of TWI318797B publication Critical patent/TWI318797B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
TW095106497A 2005-02-28 2006-02-27 Thin film transistor panel TWI318797B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005054402A JP2006245031A (ja) 2005-02-28 2005-02-28 薄膜トランジスタパネル

Publications (2)

Publication Number Publication Date
TW200640013A true TW200640013A (en) 2006-11-16
TWI318797B TWI318797B (en) 2009-12-21

Family

ID=36218720

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106497A TWI318797B (en) 2005-02-28 2006-02-27 Thin film transistor panel

Country Status (7)

Country Link
US (1) US7633090B2 (zh)
EP (1) EP1854146B1 (zh)
JP (1) JP2006245031A (zh)
KR (1) KR100909547B1 (zh)
CN (1) CN101128939B (zh)
TW (1) TWI318797B (zh)
WO (1) WO2006093029A1 (zh)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5117667B2 (ja) * 2005-02-28 2013-01-16 カシオ計算機株式会社 薄膜トランジスタパネル
US7731377B2 (en) * 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
KR101217555B1 (ko) * 2006-06-28 2013-01-02 삼성전자주식회사 접합 전계 효과 박막 트랜지스터
JP4934599B2 (ja) * 2007-01-29 2012-05-16 キヤノン株式会社 アクティブマトリクス表示装置
JP5288726B2 (ja) * 2007-05-07 2013-09-11 株式会社ジャパンディスプレイウェスト 液晶表示装置
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR100941836B1 (ko) 2008-05-19 2010-02-11 삼성모바일디스플레이주식회사 유기 전계 발광표시장치
JP2010103778A (ja) * 2008-10-23 2010-05-06 Sumitomo Chemical Co Ltd 照明光通信システム用の送信装置
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010156805A (ja) * 2008-12-26 2010-07-15 Casio Computer Co Ltd 液晶表示素子
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
KR101857405B1 (ko) * 2009-07-10 2018-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102181301B1 (ko) 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2011010544A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI528527B (zh) * 2009-08-07 2016-04-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5642447B2 (ja) * 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR20120099475A (ko) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101462539B1 (ko) 2010-12-20 2014-11-18 삼성디스플레이 주식회사 그라펜을 이용한 유기발광표시장치
TWI491050B (zh) * 2011-11-25 2015-07-01 Sony Corp 電晶體，顯示器及電子裝置
TWI445181B (zh) * 2012-02-08 2014-07-11 E Ink Holdings Inc 薄膜電晶體
CN103219341B (zh) * 2013-04-03 2016-08-31 北京京东方光电科技有限公司 一种阵列基板及制备方法、显示装置
JP6235021B2 (ja) 2013-08-07 2017-11-22 シャープ株式会社 半導体装置、表示装置および半導体装置の製造方法
JP2015072339A (ja) * 2013-10-02 2015-04-16 株式会社ジャパンディスプレイ 液晶表示装置
KR102345617B1 (ko) * 2014-01-13 2022-01-03 삼성디스플레이 주식회사 표시패널
TWI553836B (zh) * 2014-05-07 2016-10-11 群創光電股份有限公司 顯示裝置
CN107078165B (zh) 2014-09-10 2020-10-02 夏普株式会社 半导体装置、液晶显示装置和半导体装置的制造方法
US10276593B2 (en) * 2015-06-05 2019-04-30 Sharp Kabushiki Kaisha Active matrix substrate and method for manufacturing same, display device using active matrix substrate
CN105304653B (zh) 2015-11-27 2018-07-03 深圳市华星光电技术有限公司 像素结构、阵列基板、液晶显示面板及像素结构制造方法
JP6477910B2 (ja) * 2016-09-16 2019-03-06 凸版印刷株式会社 表示装置及び表示装置基板
JP7050460B2 (ja) * 2016-11-22 2022-04-08 株式会社半導体エネルギー研究所 表示装置
CN108182872B (zh) * 2016-12-08 2021-01-26 群创光电股份有限公司 具有光感测单元的显示装置
US10424670B2 (en) * 2016-12-30 2019-09-24 Intel Corporation Display panel with reduced power consumption
JP6379259B2 (ja) * 2017-06-30 2018-08-22 株式会社半導体エネルギー研究所 表示装置、及び電子機器
CN110767106B (zh) * 2018-09-30 2020-09-08 云谷（固安）科技有限公司 显示面板、显示屏及显示终端
CN110098238A (zh) 2019-05-15 2019-08-06 武汉华星光电半导体显示技术有限公司 显示面板
JP6895574B2 (ja) * 2019-07-25 2021-06-30 株式会社半導体エネルギー研究所 透過型の液晶表示装置
TWI721776B (zh) * 2020-02-06 2021-03-11 友達光電股份有限公司 主動元件基板及其製造方法
CN113534561B (zh) * 2020-04-21 2022-12-30 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
WO2022088078A1 (zh) * 2020-10-30 2022-05-05 京东方科技集团股份有限公司 显示基板、显示面板及显示装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178563A (ja) * 1982-04-13 1983-10-19 Seiko Epson Corp 薄膜トランジスタ
JPH02234133A (ja) * 1989-03-08 1990-09-17 Hitachi Ltd 液晶表示装置
JPH0444014A (ja) * 1990-06-11 1992-02-13 Toshiba Corp アクティブマトリクス型液晶表示装置
JPH05127195A (ja) * 1991-11-08 1993-05-25 Toshiba Corp 液晶表示装置
JPH06194687A (ja) 1992-10-30 1994-07-15 Nec Corp 透過型アクティブマトリクス型液晶素子
JP2543286B2 (ja) 1992-04-22 1996-10-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
JPH0926603A (ja) * 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
WO1997006554A2 (en) * 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
US6069370A (en) 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
JPH1039336A (ja) * 1996-07-26 1998-02-13 Toshiba Corp アクティブマトリクス型液晶表示装置
KR100209281B1 (ko) * 1996-10-16 1999-07-15 김영환 액정 표시 소자 및 그 제조방법
JP3784491B2 (ja) 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JP3980156B2 (ja) * 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP2000174282A (ja) 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6998656B2 (en) 2003-02-07 2006-02-14 Hewlett-Packard Development Company, L.P. Transparent double-injection field-effect transistor
TWI301915B (zh) * 2000-03-17 2008-10-11 Seiko Epson Corp
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP4099324B2 (ja) 2000-11-27 2008-06-11 シャープ株式会社 液晶表示装置
JP4292245B2 (ja) 2001-02-05 2009-07-08 三星モバイルディスプレイ株式會社 発光体、発光素子、及び発光表示装置
SG103846A1 (en) 2001-02-28 2004-05-26 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP2003179233A (ja) 2001-12-13 2003-06-27 Fuji Xerox Co Ltd 薄膜トランジスタ、及びそれを備えた表示素子
JP3594018B2 (ja) 2002-02-18 2004-11-24 富士電機ホールディングス株式会社 有機ｅｌディスプレイ
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
CN100369267C (zh) * 2002-05-22 2008-02-13 夏普株式会社 半导体装置及采用其的显示装置
JP2004014982A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
US7250930B2 (en) * 2003-02-07 2007-07-31 Hewlett-Packard Development Company, L.P. Transparent active-matrix display
JP4102925B2 (ja) * 2003-05-15 2008-06-18 カシオ計算機株式会社 アクティブマトリックス型液晶表示装置
JP2004347838A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 電気光学装置並びに電子機器及び投射型表示装置
JP2005051115A (ja) * 2003-07-30 2005-02-24 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタ、薄膜トランジスタの製造方法、光機能素子および光機能素子の製造方法
JP4522145B2 (ja) * 2004-05-25 2010-08-11 シャープ株式会社 表示装置用基板、その製造方法及び表示装置
JP2006058730A (ja) * 2004-08-23 2006-03-02 Sony Corp 表示装置
JP5117667B2 (ja) 2005-02-28 2013-01-16 カシオ計算機株式会社 薄膜トランジスタパネル

Also Published As

Publication number Publication date
KR20070091681A (ko) 2007-09-11
CN101128939B (zh) 2011-01-12
TWI318797B (en) 2009-12-21
WO2006093029A1 (en) 2006-09-08
US20060194500A1 (en) 2006-08-31
EP1854146A1 (en) 2007-11-14
JP2006245031A (ja) 2006-09-14
EP1854146B1 (en) 2019-07-17
KR100909547B1 (ko) 2009-07-27
US7633090B2 (en) 2009-12-15
CN101128939A (zh) 2008-02-20

Similar Documents

Publication Publication Date Title
TW200640013A (en) Thin film transistor panel
TW200640014A (en) Thin film transistor panel
TW200703735A (en) Organic thin film transistor array panel and method of manufacturing the same
TW200705067A (en) Liquid crystal display apparatus
TW200636368A (en) Thin film transistor array panel
TW200622462A (en) Electrophoretic display and method of manufacturing thereof
TW200707752A (en) Thin film transistor array panel
TW200727492A (en) Organic thin film transistor array panel
TW200601572A (en) Liquid crystal display and thin film transistor array panel therefor
TW200707748A (en) Organic thin film transistor and active matrix display
ATE530945T1 (de) Aktivmatrixsubstrat und damit ausgestattete flüssigkristallanzeigeanordnung
TW200627625A (en) Sensor, thin film transistor array panel, and display panel including the sensor
TW200717817A (en) Liquid crystal display device and method for manufacturing the same
KR970062777A (ko) 액정 표시 장치
TW200703660A (en) TFT array panel, liquid crystal display including same, and method of manufacturing TFT array panel
TW200625650A (en) Method of manufacturing a flexible thin film transistor array panel including plastic substrate
TW200702858A (en) Transflective liquid crystal display panel and manufacturing method thereof
TW200629563A (en) Thin film transistor array panel and method for manufacturing the same
TW200500702A (en) Thin film transistor array panel and manufacturing method thereof
TW200641496A (en) Organic thin film transistor array panel and method of manufacturing the same
TW200629568A (en) Thin film transistor array panel
TW200732804A (en) Display substrate, method of manufacturing the same and display panel having the same
TW200715565A (en) Making organic thin film transistor array panels
TW200711143A (en) Organic thin film transistor display panel
TW200736786A (en) Thin film transistor array substrate and electronic ink display device