TW200627584A - Novel method for copper wafer wire bonding - Google Patents

Novel method for copper wafer wire bonding

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Publication number
TW200627584A
TW200627584A TW094114282A TW94114282A TW200627584A TW 200627584 A TW200627584 A TW 200627584A TW 094114282 A TW094114282 A TW 094114282A TW 94114282 A TW94114282 A TW 94114282A TW 200627584 A TW200627584 A TW 200627584A
Authority
TW
Taiwan
Prior art keywords
copper
wire bonding
copper pad
novel method
layer
Prior art date
Application number
TW094114282A
Other languages
English (en)
Other versions
TWI267945B (en
Inventor
Chao-Yuan Su
Chender Huang
Chien-Hsiun Lee
Hsin-Hui Lee
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200627584A publication Critical patent/TW200627584A/zh
Application granted granted Critical
Publication of TWI267945B publication Critical patent/TWI267945B/zh

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Wire Bonding (AREA)
TW094114282A 2005-01-31 2005-05-03 Novel method for copper wafer wire bonding TWI267945B (en)

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DE102007063268A1 (de) * 2007-12-31 2009-07-09 Advanced Micro Devices, Inc., Sunnyvale Drahtverbindung mit aluminiumfreien Metallisierungsschichten durch Oberflächenkonditionierung
DE102008016427B4 (de) * 2008-03-31 2018-01-25 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Drahtbonden auf reaktiven Metalloberflächen einer Metallisierung eines Halbleiterbauelements durch Vorsehen einer Schutzschicht
RU2504050C2 (ru) * 2008-09-09 2014-01-10 Конинклейке Филипс Электроникс Н.В. Приведение в контакт устройства с проводником
US8569887B2 (en) * 2009-11-05 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Post passivation interconnect with oxidation prevention layer
TWI509089B (zh) * 2014-07-15 2015-11-21 Tanaka Electronics Ind Sectional Structure of Pure Copper Alloy Wire for Ultrasonic Jointing
CN105405828B (zh) * 2014-09-15 2018-01-12 田中电子工业株式会社 超声波接合用纯铜合金线的剖面构造
US11842958B2 (en) * 2022-03-18 2023-12-12 Chun-Ming Lin Conductive structure including copper-phosphorous alloy and a method of manufacturing conductive structure
US11764153B1 (en) 2022-07-28 2023-09-19 Chun-Ming Lin Interconnect structure and manufacturing method for the same

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JP2563652B2 (ja) * 1990-07-17 1996-12-11 株式会社東芝 半導体装置及びその製造方法
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TWI480964B (zh) * 2007-08-15 2015-04-11 Stats Chippac Ltd 線接合結構以及消除特殊線接合加工與縮減基板上之接合間距的方法

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