TW200627584A - Novel method for copper wafer wire bonding - Google Patents
Novel method for copper wafer wire bondingInfo
- Publication number
- TW200627584A TW200627584A TW094114282A TW94114282A TW200627584A TW 200627584 A TW200627584 A TW 200627584A TW 094114282 A TW094114282 A TW 094114282A TW 94114282 A TW94114282 A TW 94114282A TW 200627584 A TW200627584 A TW 200627584A
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- wire bonding
- copper pad
- novel method
- layer
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052802 copper Inorganic materials 0.000 title abstract 8
- 239000010949 copper Substances 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 2
- 229910017888 Cu—P Inorganic materials 0.000 abstract 3
- 238000002161 passivation Methods 0.000 abstract 2
- 238000007772 electroless plating Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/047,060 US20060170114A1 (en) | 2005-01-31 | 2005-01-31 | Novel method for copper wafer wire bonding |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200627584A true TW200627584A (en) | 2006-08-01 |
TWI267945B TWI267945B (en) | 2006-12-01 |
Family
ID=36755674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094114282A TWI267945B (en) | 2005-01-31 | 2005-05-03 | Novel method for copper wafer wire bonding |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060170114A1 (zh) |
TW (1) | TWI267945B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI480964B (zh) * | 2007-08-15 | 2015-04-11 | Stats Chippac Ltd | 線接合結構以及消除特殊線接合加工與縮減基板上之接合間距的方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013099A (ja) * | 2005-06-29 | 2007-01-18 | Samsung Electronics Co Ltd | 無鉛半田ボールを有する半導体パッケージ及びその製造方法 |
US7915735B2 (en) * | 2005-08-05 | 2011-03-29 | Micron Technology, Inc. | Selective metal deposition over dielectric layers |
US7791198B2 (en) | 2007-02-20 | 2010-09-07 | Nec Electronics Corporation | Semiconductor device including a coupling region which includes layers of aluminum and copper alloys |
DE102007063268A1 (de) * | 2007-12-31 | 2009-07-09 | Advanced Micro Devices, Inc., Sunnyvale | Drahtverbindung mit aluminiumfreien Metallisierungsschichten durch Oberflächenkonditionierung |
DE102008016427B4 (de) * | 2008-03-31 | 2018-01-25 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Drahtbonden auf reaktiven Metalloberflächen einer Metallisierung eines Halbleiterbauelements durch Vorsehen einer Schutzschicht |
RU2504050C2 (ru) * | 2008-09-09 | 2014-01-10 | Конинклейке Филипс Электроникс Н.В. | Приведение в контакт устройства с проводником |
US8569887B2 (en) * | 2009-11-05 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post passivation interconnect with oxidation prevention layer |
TWI509089B (zh) * | 2014-07-15 | 2015-11-21 | Tanaka Electronics Ind | Sectional Structure of Pure Copper Alloy Wire for Ultrasonic Jointing |
CN105405828B (zh) * | 2014-09-15 | 2018-01-12 | 田中电子工业株式会社 | 超声波接合用纯铜合金线的剖面构造 |
US11842958B2 (en) * | 2022-03-18 | 2023-12-12 | Chun-Ming Lin | Conductive structure including copper-phosphorous alloy and a method of manufacturing conductive structure |
US11764153B1 (en) | 2022-07-28 | 2023-09-19 | Chun-Ming Lin | Interconnect structure and manufacturing method for the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917707A (en) * | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
JP2563652B2 (ja) * | 1990-07-17 | 1996-12-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6759597B1 (en) * | 1998-02-02 | 2004-07-06 | International Business Machines Corporation | Wire bonding to dual metal covered pad surfaces |
US6457234B1 (en) * | 1999-05-14 | 2002-10-01 | International Business Machines Corporation | Process for manufacturing self-aligned corrosion stop for copper C4 and wirebond |
JP2001196413A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
US6653170B1 (en) * | 2001-02-06 | 2003-11-25 | Charles W. C. Lin | Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit |
US6825564B2 (en) * | 2002-08-21 | 2004-11-30 | Micron Technology, Inc. | Nickel bonding cap over copper metalized bondpads |
US7115997B2 (en) * | 2003-11-19 | 2006-10-03 | International Business Machines Corporation | Seedless wirebond pad plating |
-
2005
- 2005-01-31 US US11/047,060 patent/US20060170114A1/en not_active Abandoned
- 2005-05-03 TW TW094114282A patent/TWI267945B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI480964B (zh) * | 2007-08-15 | 2015-04-11 | Stats Chippac Ltd | 線接合結構以及消除特殊線接合加工與縮減基板上之接合間距的方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI267945B (en) | 2006-12-01 |
US20060170114A1 (en) | 2006-08-03 |
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