TW200618292A - NMOS-transistor - Google Patents
NMOS-transistorInfo
- Publication number
- TW200618292A TW200618292A TW094134207A TW94134207A TW200618292A TW 200618292 A TW200618292 A TW 200618292A TW 094134207 A TW094134207 A TW 094134207A TW 94134207 A TW94134207 A TW 94134207A TW 200618292 A TW200618292 A TW 200618292A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- conductive
- tub
- drain
- inner tub
- Prior art date
Links
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004047956A DE102004047956A1 (de) | 2004-10-01 | 2004-10-01 | NMOS-Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200618292A true TW200618292A (en) | 2006-06-01 |
Family
ID=35453667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094134207A TW200618292A (en) | 2004-10-01 | 2005-09-30 | NMOS-transistor |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102004047956A1 (zh) |
TW (1) | TW200618292A (zh) |
WO (1) | WO2006037560A2 (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758213A (ja) * | 1993-08-13 | 1995-03-03 | Oki Electric Ind Co Ltd | 半導体装置におけるウェルの形成方法 |
US6033946A (en) * | 1995-12-08 | 2000-03-07 | Texas Instruments Incorporated | Method for fabricating an isolated NMOS transistor on a digital BiCMOS process |
US6489653B2 (en) * | 1999-12-27 | 2002-12-03 | Kabushiki Kaisha Toshiba | Lateral high-breakdown-voltage transistor |
JP2001352070A (ja) * | 2000-04-07 | 2001-12-21 | Denso Corp | 半導体装置およびその製造方法 |
TW548835B (en) * | 2001-08-30 | 2003-08-21 | Sony Corp | Semiconductor device and production method thereof |
-
2004
- 2004-10-01 DE DE102004047956A patent/DE102004047956A1/de not_active Withdrawn
-
2005
- 2005-09-29 WO PCT/EP2005/010546 patent/WO2006037560A2/de active Application Filing
- 2005-09-30 TW TW094134207A patent/TW200618292A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2006037560A3 (de) | 2006-09-14 |
WO2006037560A2 (de) | 2006-04-13 |
DE102004047956A1 (de) | 2006-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200620676A (en) | Thin film transistor and its manufacturing method | |
WO2005091799A3 (en) | Optimized trench power mosfet with integrated schottky diode | |
WO2003088322A3 (en) | Semiconductor device | |
EP1524701A3 (en) | High-voltage field-effect transistor | |
TW200610025A (en) | A floating gate having enhanced charge retention | |
EP1233454A3 (en) | Semiconductor memory device and method of manufacturing the same | |
TW200629477A (en) | Single metal gate CMOS device | |
WO2008010891A3 (en) | Capacitorlbss one-transistor floating-body dram cell and method of forming the same | |
TW200644237A (en) | High-voltage MOS device | |
WO2007082266A3 (en) | Semiconductor transistors with expanded top portions of gates | |
TW200633220A (en) | Lateral double-diffused MOS transistor and manufacturing method therefor | |
TW200620561A (en) | Integrated circuit and method of fabricating the same | |
WO2005053032A3 (en) | Trench insulated gate field effect transistor | |
WO2006010055A3 (en) | Drain extended mos transistors and methods for making the same | |
TW200603404A (en) | Semiconductor device | |
TW200611409A (en) | Lateral semiconductor device using trench structure and method of manufacturing the same | |
EP1496554A3 (en) | Organic thin film transistor and method of manufacturing the same | |
TW200729507A (en) | Semiconductor deivce | |
WO2010078051A3 (en) | Embedded memory cell and method of manufacturing same | |
WO2011160041A3 (en) | High voltage transistor using diluted drain | |
GB2434033A (en) | Organic transistor | |
KR950010060A (ko) | 반도체장치 및 그 제조방법 | |
TW200634996A (en) | Method of fabricating flash memory device | |
WO2011042619A3 (fr) | Mémoire organique à double grille et procédé de réalisation | |
TW200731539A (en) | Semiconductor device |