JP3533783B2 - Semiconductor substrate and semiconductor device manufacturing method - Google Patents
Semiconductor substrate and semiconductor device manufacturing methodInfo
- Publication number
- JP3533783B2 JP3533783B2 JP27025795A JP27025795A JP3533783B2 JP 3533783 B2 JP3533783 B2 JP 3533783B2 JP 27025795 A JP27025795 A JP 27025795A JP 27025795 A JP27025795 A JP 27025795A JP 3533783 B2 JP3533783 B2 JP 3533783B2
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- Japan
- Prior art keywords
- neutron
- heat treatment
- substrate
- semiconductor
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電荷結合素子いわ
ゆるＣＣＤ（チャージ・カプルド・デバイス）型固体撮
像素子による半導体装置等に適用して好適な半導体基板
および半導体装置の各製造方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate suitable for application to a semiconductor device or the like using a charge-coupled device, a so-called CCD (charge coupled device) type solid-state imaging device, and a method of manufacturing the semiconductor device.
【０００２】[0002]
【従来の技術】各種半導体装置においては、その半導体
素子が形成される半導体基板の特に半導体素子の動作領
域いわゆる活性領域に結晶欠陥や金属不純物汚染が存在
すると、素子の特性劣化、寿命の低下等を来すことから
極力回避されることが必要である。特に、電荷結合素子
いわゆるＣＣＤ（チャージ・カプルド・デバイス）によ
る固体撮像素子を構成する場合においては、この欠陥
や、金属不純物の存在は、暗電流の増加とか、撮像画像
にいわゆる白傷欠陥を発生させたりして画質の低下を来
し、更にゲート絶縁膜耐圧の低下を招来する。2. Description of the Related Art In various semiconductor devices, if a crystal defect or metal impurity contamination is present in a semiconductor substrate on which the semiconductor element is formed, especially in an operation area of the semiconductor element, that is, an active area, the characteristics of the element are deteriorated and the life is shortened. It is necessary to be avoided as much as possible from coming. Particularly, in the case of forming a solid-state image pickup device using a charge-coupled device, so-called CCD (charge coupled device), this defect and the presence of metal impurities cause an increase in dark current and a so-called white defect in the captured image. As a result, the image quality is deteriorated and the breakdown voltage of the gate insulating film is further deteriorated.
【０００３】一般に、半導体装置用のシリコン基板は、
ＣＺ法（Czochralski 法）、ＭＣＺ法（Magnetic Field
Applied CZ 法) 、ＦＺ法（Float Zone法）によって形
成され、集積回路用基板としてはＣＺ法、ＭＣＺ法が主
流であり、固体撮像装置用としてはＭＣＺ法が主流であ
る。Generally, silicon substrates for semiconductor devices are
CZ method (Czochralski method), MCZ method (Magnetic Field
Applied CZ method) and FZ method (Float Zone method). The CZ method and the MCZ method are the mainstream for the integrated circuit substrate, and the MCZ method is the mainstream for the solid-state imaging device.
【０００４】また、抵抗率の制御技術としては、原材料
である多結晶シリコンにIII 族またはＶ族の元素を単体
または化合物として添加すドーパント添加法や、単結晶
シリコン中に約３％程度含まれているＳｉ同位体（30Ｓ
ｉ）に熱中性子を照射させて 31Ｓｉに変え、更にβ崩壊
により31Ｐに変化することを利用したいわゆるＮＴＤ
（Neutron Transmutation Doping）法がある。このＮＴ
Ｄ法はｎ型のみにしか利用できないという問題があるも
のの、ドーパント添加法に比し、極めてドーパント分布
が均一であり、かつ高抵抗（例えばＭＣＺによるＮＴＤ
基板で１００Ω・ｃｍ以上）の基板の制御性が良く、パ
ワーデバイスや固体撮像装置の半導体基板として用いら
れている。Further, as a technique for controlling the resistivity, raw materials are used.
Element of group III or group V is added to polycrystalline silicon which is
Or a dopant addition method that is added as a compound or a single crystal
Si isotope (about 3% contained in silicon)30S
Irradiate i) with thermal neutrons 31Change to Si and further β decay
By31So-called NTD that utilizes the change to P
(Neutron Transmutation Doping) method. This NT
The D method has the problem that it can only be used for the n-type.
However, compared to the dopant addition method, the dopant distribution is extremely high.
Is uniform and has high resistance (for example, NTD by MCZ
The substrate has a good controllability of 100 Ω · cm or more.
It is used as a semiconductor substrate for power devices and solid-state imaging devices.
Has been.
【０００５】また、ＮＴＤ法に関しては、種々の提案が
なされている（例えば特開昭６３−１４１３２２号公報
（以下参考資料１という）、特開平４−２９５０９３号
公報（以下参考資料２という）、特開平４−３２１２２
２号公報（以下参考資料３という））。上記参考資料１
に開示の方法においては、高速中性子が１×１０12個／
cm2 以上照射するものであり、熱中性子／高速中性子比
を３０以下、酸素濃度を約０．５×１０17atoms/cm3 以
上とするものである。また、上記参考資料２に開示の方
法においては、シリコン単結晶中の酸素濃度を重水炉照
射の場合０．９０×１０18cm-3以下、軽水炉照射の場合
０．５０×１０cm-3以下とするものである。更に、上記
参考資料３に開示の方法では、酸素濃度を２〜１３×１
０17cm-3とし、熱中性子／高速中性子比を３０以下とす
るものであり、この中性子照射後のシリコン基板に対し
て９００〜１，０５０℃、１６時間以上の熱処理を行う
というものである。Various proposals have been made for the NTD method (for example, JP-A-63-141322 (hereinafter referred to as Reference Material 1), JP-A-4-295093 (hereinafter referred to as Reference Material 2), JP-A-4-32122
Publication No. 2 (hereinafter referred to as Reference Material 3)). Reference material 1 above
In the method disclosed in, the number of fast neutrons is 1 × 10 12 /
Irradiation is performed with cm 2 or more, and the thermal neutron / fast neutron ratio is 30 or less, and the oxygen concentration is about 0.5 × 10 17 atoms / cm 3 or more. Further, in the above-described method disclosed in Reference 2, the oxygen concentration in the silicon single crystal below if 0.90 × 10 18 cm -3 of heavy water reactor irradiation, and if 0.50 × 10 cm -3 or less of a light water reactor irradiation To do. Furthermore, in the method disclosed in Reference Material 3 described above, the oxygen concentration is 2 to 13 × 1.
And 0 17 cm -3, are those of thermal neutrons / fast neutron ratio is 30 or less, 900~1,050 ℃, is that heat treatment is performed over 16 hours on the silicon substrate after the neutron irradiation .
【０００６】[0006]
【発明が解決しようとする課題】上述した中性子照射を
適用する場合、効果的に結晶欠陥発生の低減化、重金属
不純物のゲッタリングをはかることができる。しかしな
がら、これらいづれの方法においても、必ずしも固体撮
像装置における白傷発生を確実に回避する程度に満足で
きるシリコン基板を得ることには問題がある。When the above-mentioned neutron irradiation is applied, it is possible to effectively reduce the generation of crystal defects and gettering heavy metal impurities. However, with any of these methods, there is a problem in obtaining a silicon substrate that is satisfactory enough to reliably avoid the occurrence of white scratches in the solid-state imaging device.
【０００７】本発明においては、種々の研究、考察を重
ねた結果、固体撮像装置等においても、より効果的に結
晶起因の欠陥や、不純物汚染等に関連した素子特性の改
善をはかることができるシリコン（Ｓｉ）半導体基板お
よびこれによる半導体装置を得ることのできる半導体基
板および半導体装置の製造方法を提供する。In the present invention, as a result of various studies and consideration, it is possible to more effectively improve element characteristics related to defects due to crystals, impurity contamination, etc. even in a solid-state imaging device or the like. Provided are a silicon (Si) semiconductor substrate, a semiconductor substrate capable of obtaining a semiconductor device using the same, and a method for manufacturing a semiconductor device.
【０００８】[0008]
【課題を解決するための手段】本発明は、熱中性子／高
速中性子の存在比が、特に３０より大で１，０００未満
である中性子照射炉を用いて、酸素濃度が９×１０ 17 at
oms/cm 3 以上であるシリコン単結晶体に中性子照射を行
い、その後イントリンシック・ゲッタリング効果を得る
酸素外方拡散の熱処理を１，０００℃以上で行い、更に
内部析出物形成の熱処理を８００℃以下で行ってシリコ
ン基板による半導体基板を得る。According to the present invention, a neutron irradiation furnace having a thermal neutron / fast neutron abundance ratio of more than 30 and less than 1,000 is used, and the oxygen concentration is 9 × 10 17 at.
Neutron irradiation is performed on a silicon single crystal body having an oms / cm 3 or more.
Then get an intrinsic gettering effect
Oxygen outward diffusion heat treatment is performed at 1,000 ℃ or higher,
A heat treatment for forming internal precipitates is performed at 800 ° C. or lower to obtain a semiconductor substrate made of a silicon substrate.
【０００９】また、酸素濃度が９×１０ 17 atoms/cm 3 以
上であるシリコン単結晶体より成るシリコン基板に対
し、熱中性子／高速中性子の存在比が、３０より大で
１，０００未満である中性子照射炉を用いて中性子照射
を行う工程と、１，０００℃以上の温度でイントリンシ
ック・ゲッタリング効果を得る酸素外方拡散の熱処理を
行う工程と、８００℃以下の温度で内部析出物形成の熱
処理を行う工程とを有する。 The oxygen concentration is 9 × 10 17 atoms / cm 3 Since
For the silicon substrate made of the silicon single crystal above
However, if the abundance ratio of thermal neutrons / fast neutrons is greater than 30,
Neutron irradiation using a neutron irradiation furnace that is less than 1,000
And the process of performing the
Heat treatment of oxygen out-diffusion to obtain a gettering effect
Steps to perform and heat of internal precipitate formation at temperatures below 800 ° C
And a step of performing processing.
【００１０】ここで、シリコン単結晶体とは、結晶成長
して得たいわゆるインゴット、もしくはこれより切り出
されたウエーハ状基板の結晶体を総称するものとする。Here, the silicon single crystal is a generic term for a so-called ingot obtained by crystal growth or a crystal of a wafer-like substrate cut out from the ingot.
【００１１】上述の本発明方法によれば、そのゲッタリ
ングのための熱処理を、上述したシリコン（Ｓｉ）基板
によって半導体装置例えばＣＣＤ（電荷転送装置）構成
による撮像装置を構成する製造過程で伴う熱処理によっ
て確実に、そのゲッタリング効果を奏することが確認さ
れた。According to the above-described method of the present invention, the heat treatment for gettering is accompanied with the heat treatment in the manufacturing process for forming an image pickup device having a semiconductor device such as a CCD (charge transfer device) with the above-mentioned silicon (Si) substrate. It was confirmed that the gettering effect was certainly exhibited by the above.
【００１２】尚、本発明方法においては、熱中性子／高
速中性子比いわゆるＣｄ比を３０より大で１，０００未
満とするものであるが、これは３０以下では、シリコン
（Ｓｉ）基板への中性子照射によるダメージが大きすぎ
て後の熱処理によっても回復できない残留欠陥となるこ
とを認めたことにより、また１，０００以上では、ダメ
ージが少なすぎて半導体装置の製造過程での熱処理での
ゲッタリング効果が不充分となることを認めたことによ
る。In the method of the present invention, the thermal neutron / fast neutron ratio, the so-called Cd ratio, is set to be greater than 30 and less than 1,000, but when it is 30 or less, neutrons to the silicon (Si) substrate are neutrons. By recognizing that the damage caused by irradiation is too large to be a residual defect that cannot be recovered by the subsequent heat treatment, and when it is 1,000 or more, the damage is too small and the gettering effect in the heat treatment in the semiconductor device manufacturing process is obtained. Is due to the admission that
【００１３】[0013]
【発明の実施の形態】本発明製造方法の実施の形態を説
明する。この例では、ＣＺ法もしくはＭＣＺ法等によっ
てＳｉ単結晶インゴットを成長させ、それを円柱状に切
削した単結晶体を、中性子照射炉中に配置していわゆる
ＮＴＤを行う。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the manufacturing method of the present invention will be described. In this example, a Si single crystal ingot is grown by the CZ method, the MCZ method, or the like, and the single crystal body obtained by cutting the Si single crystal ingot into a cylindrical shape is placed in a neutron irradiation furnace to perform so-called NTD.
【００１４】この中性子には、熱中性子と運動エネルギ
ーを有する高速中性子が混在しているものであり、両者
の存在比（熱中性子／高速中性子比）は、照射炉固有の
値となる。本発明においては、この熱中性子／高速中性
子比を、３０より大で、１，０００未満とする。Thermal neutrons and fast neutrons having kinetic energy are mixed in this neutron, and the abundance ratio (thermal neutron / fast neutron ratio) of both is a value peculiar to the irradiation furnace. In the present invention, this thermal neutron / fast neutron ratio is greater than 30 and less than 1,000.
【００１５】一方、この中性子照射前におけるＳｉ単結
晶体中の酸素濃度は、９×１０17atoms/cm3 以上とし
た。この酸素濃度の選定は、例えば結晶成長におけるＳ
ｉ融液を収容する石英るつぼからの酸素の取り込みの制
御によって行う。例えば、結晶引き上げの結晶種（核）
および（または）るつぼの相対的回転速度の制御、すな
わち熱対流、および強制対流の制御によって行うとか、
るつぼと加熱手段との相対的位置の選定、すなわち融液
表面温度の制御、るつぼの開口面積すなわち酸素の蒸発
面積の制御等によって行うことができ、また、ＭＣＺ法
によるときは、その印加磁界の選定によってＳｉ融液の
粘性制御すなわち対流の制御によって行うことができ
る。On the other hand, the oxygen concentration in the Si single crystal body before the neutron irradiation was set to 9 × 10 17 atoms / cm 3 or more. This oxygen concentration is selected by, for example, S in crystal growth.
i The oxygen uptake from the quartz crucible containing the melt is controlled. For example, a crystal seed (nucleus) for pulling a crystal
And / or control of the relative speed of rotation of the crucible, ie thermal convection and forced convection
The relative position of the crucible and the heating means can be selected, that is, the melt surface temperature can be controlled, the opening area of the crucible, that is, the oxygen evaporation area can be controlled, and when the MCZ method is used, the applied magnetic field Depending on the selection, the viscosity of the Si melt can be controlled, that is, the convection can be controlled.
【００１６】このようにして、中性子照射すなわちＮＴ
Ｄを行ったＳｉ単結晶からＳｉ基板を切り出す。その
後、ＩＧ（Intrinsic Gettering)に必要な酸素外方拡散
を、１，０００℃以上熱処理温度例えば１，１００℃で
１時間の熱処理によって行う。In this way, neutron irradiation or NT
A Si substrate is cut out from the Si single crystal subjected to D. Thereafter, oxygen outward diffusion necessary for IG (Intrinsic Gettering) is performed by heat treatment at a heat treatment temperature of 1,000 ° C. or higher, for example, 1,100 ° C. for 1 hour.
【００１７】その後、内部欠陥形成、すなわちＦｅ、Ｃ
ｕ等の重金属不純物のトラップとして作用させる内部析
出物形成の熱処理温度を８００℃以下、好ましくは５０
０℃〜７００℃で行う。この熱処理は、初期の加熱が８
００℃以下であれば、その後において、８００℃を越え
る温度に加熱される工程を経ても内部析出物形成の効果
に問題はない。この内部析出物形成の熱処理温度は、こ
のＳｉ基板を用いて、半導体装置例えばＣＣＤ撮像装置
等を製造する製造過程での加熱工程で兼ねしめることが
できる。この加熱工程とは、半導体装置の製造工程にお
けるｎ型もしくはｐ型の不純物のイオン注入後の熱拡
散、ＳｉＯ2 等のＣＶＤ(Chemical VaporDeposition)
工程や酸化工程、アニール工程等によって行うことがで
きる。After that, internal defect formation, that is, Fe, C
The heat treatment temperature for forming the internal precipitate that acts as a trap for heavy metal impurities such as u is 800 ° C. or lower, preferably 50.
It is performed at 0 ° C to 700 ° C. In this heat treatment, the initial heating is 8
If the temperature is 00 ° C. or lower, there is no problem in the effect of forming the internal precipitate even after the subsequent step of heating to a temperature higher than 800 ° C. The heat treatment temperature for forming the internal precipitates can also be used in the heating step in the manufacturing process for manufacturing a semiconductor device such as a CCD image pickup device using the Si substrate. The heating process is thermal diffusion after ion implantation of n-type or p-type impurities in a semiconductor device manufacturing process, and CVD (Chemical Vapor Deposition) of SiO 2 or the like.
It can be performed by a process, an oxidation process, an annealing process, or the like.
【００１８】本発明によるＳｉ半導体基板によって半導
体装置、例えばＣＣＤ型固体撮像装置を構成する。The Si semiconductor substrate according to the present invention constitutes a semiconductor device, for example, a CCD type solid-state image pickup device.
【００１９】図１は、このＣＣＤ型固体撮像装置の一例
の要部の概略断面図を示す。この場合、上述した本発明
方法によって得たｎ型Ｓｉ半導体基板１にｐ型の第１の
ウエル領域２１を形成する。そして、この第１のウエル
領域２１上に受光部２２と、この受光部２２によって受
光量に応じて発生させた電荷を転送するＣＣＤ構成によ
る垂直シフトレジスタ部２３と、受光部２２からシフト
レジスタ部２３に電荷の読み出しを行う読み出しゲート
部２４とが形成される。FIG. 1 is a schematic sectional view of a main part of an example of this CCD type solid-state image pickup device. In this case, the p-type first well region 21 is formed on the n-type Si semiconductor substrate 1 obtained by the method of the present invention described above. Then, a light receiving portion 22 on the first well region 21, a vertical shift register portion 23 having a CCD structure for transferring electric charges generated by the light receiving portion 22 according to the amount of received light, and a shift register portion from the light receiving portion 22. A read gate portion 24 for reading charges is formed at 23.
【００２０】受光部２２は、ｐ型ウエル領域２１との間
にｐ−ｎ接合を形成してフォトダイオードを形成するｎ
型の受光領域２５と、これの上に形成されたｐ型の正電
荷蓄積領域２６を形成する。この受光部２２は、例えば
図１において紙面と直交する方向いわゆる垂直方向に複
数配列形成されるとともに、この複数個配列された受光
部の列が複数列平行配列されてなる。The light-receiving portion 22 forms a pn junction with the p-type well region 21 to form a photodiode n.
A type light receiving region 25 and a p type positive charge storage region 26 formed thereon are formed. A plurality of the light receiving portions 22 are formed in a direction orthogonal to the paper surface in FIG. 1, that is, a so-called vertical direction, and a plurality of rows of the light receiving portions are arranged in parallel.
【００２１】シフトレジスタ部２３は、受光部２２の各
列間に、各列に沿って形成される。シフトレジスタ部２
３は、ｐ型の第２のウエル領域２７が形成され、これの
上にｎ型の転送領域２８が形成される。The shift register section 23 is formed between each row of the light receiving sections 22 along each row. Shift register unit 2
3, a p-type second well region 27 is formed, and an n-type transfer region 28 is formed thereon.
【００２２】半導体基板１上には全面的に例えば表面熱
酸化によって形成した光透過性のＳｉＯ2 絶縁膜２９が
形成され、シフトレジスタ部２３および読み出しゲート
部２４上に跨がって絶縁膜２９上に例えばＳｉ3 Ｎ4 に
よる絶縁膜３１とＳｉＯ2 による絶縁膜３２が積層され
てゲート絶縁膜１３が形成され、これの上に転送電極３
０が形成される。An optically transparent SiO 2 insulating film 29 formed by, for example, surface thermal oxidation is formed on the entire surface of the semiconductor substrate 1, and the insulating film 29 extends over the shift register section 23 and the read gate section 24. An insulating film 31 made of, for example, Si 3 N 4 and an insulating film 32 made of SiO 2 are laminated on the gate insulating film 13 to form the transfer electrode 3 thereon.
0 is formed.
【００２３】そして、全面的に光透過性のＰＳＧ（リン
シリケートガラス）等の層間絶縁層３３が形成され、受
光部２２上を除いてＡｌ膜等よりなる遮光膜３４が形成
される。Then, an interlayer insulating layer 33 such as light-transmissive PSG (phosphorus silicate glass) is formed on the entire surface, and a light shielding film 34 made of an Al film or the like is formed except on the light receiving portion 22.
【００２４】各受光部間、シフトレジスタ部の外側等に
ｐ型のチャネルストッパ領域３５が形成される。A p-type channel stopper region 35 is formed between the light receiving portions and outside the shift register portion.
【００２５】上述の本発明方法によって作製したＳｉ基
板およびこれによって作製したＣＣＤ撮像装置の特性を
評価した。
〔評価方法〕この場合、酸素濃度を、７．８〜１０．９
×１０17濃度の範囲で、それぞれ異なる濃度を有するノ
ンドープのＳｉ単結晶体を、ＭＣＺ法で成長させた。こ
のときの抵抗率は、１，０００Ω・ｃｍ以上であった。
この結晶を用いて熱中性子／高速中性子比が、それぞれ
４５０と１，０００との２種の照射炉を用いてＮＴＤを
行った。この中性子照射結晶の抵抗率は、１，１００
℃、３０分間の回復アニール後で、３０〜８０Ω・ｃｍ
であり、このようにしＮＴＤを行ったＳｉ単結晶からＳ
ｉ基板に対し、１，１００℃、２時間のウエット酸化を
行った後に測定した積層欠陥すなわちＯＳＦ（Oxidatio
n Induced Stacking Faults)は、すべてゼロであった。The characteristics of the Si substrate manufactured by the above-described method of the present invention and the CCD image pickup device manufactured by the Si substrate were evaluated. [Evaluation method] In this case, the oxygen concentration is set to 7.8 to 10.9.
Non-doped Si single crystal bodies having different concentrations in the range of × 10 17 concentration were grown by the MCZ method. At this time, the resistivity was 1,000 Ω · cm or more.
Using this crystal, NTD was carried out using two types of irradiation furnaces having a thermal neutron / fast neutron ratio of 450 and 1,000, respectively. The resistivity of this neutron irradiated crystal is 1,100.
After recovery annealing at 30 ° C for 30 minutes, 30-80Ωcm
From the Si single crystal NTDed in this way
Stacking faults, i.e., OSF (Oxidatio) measured after performing wet oxidation at 1,100 ° C. for 2 hours on the i substrate.
n Induced Stacking Faults) were all zero.
【００２６】また、このようにして得た５インチ径のＳ
ｉ基板を用いて上述した構造のＣＣＤ撮像装置を作製し
た場合の白傷欠陥数の測定結果を、図２に示す。図２に
おいては、その白傷欠陥数は、規格化したものである。The thus obtained S having a diameter of 5 inches is also used.
FIG. 2 shows the measurement results of the number of white defects in the case where the CCD image pickup device having the above-described structure was manufactured using the i substrate. In FIG. 2, the number of white defects is standardized.
【００２７】図２によれば、酸素濃度が高いほど、特に
その濃度が９×１０17atoms/cm3 以上で著しい低下が生
じている。また、その熱中性子／高速中性子比すなわち
Ｃｄ比は、１，０００未満であれば、欠陥の減少を充分
図れることができることがわかる。つまり、Ｃｄ比が
１，０００以上では、ダメージが少なすぎて、ゲッタリ
ング効果が不充分となり、酸素濃度の選定によっても充
分な欠陥発生の回避をはかられず、撮像装置を構成した
場合において、白点や、ダークの発生が大きくなり、ま
たゲート酸化膜の耐圧低下を来す。しかしながら、この
熱中性子／高速中性子比が、３０以下では、運動エネル
ギーを有する高速中性子が多すぎることによって、単結
晶体に熱処理では回復がはかられない程度残留欠陥を生
じさせる程度のダメージを生じさせてしまうことが確認
された。According to FIG. 2, as the oxygen concentration is higher, the concentration is remarkably lowered especially at 9 × 10 17 atoms / cm 3 or more. Further, it can be seen that if the thermal neutron / fast neutron ratio, that is, the Cd ratio is less than 1,000, the number of defects can be sufficiently reduced. That is, when the Cd ratio is 1,000 or more, the damage is too small, the gettering effect becomes insufficient, and even when the oxygen concentration is selected, sufficient defect generation cannot be avoided, and when the imaging device is configured, The occurrence of white spots and darkness increases, and the breakdown voltage of the gate oxide film decreases. However, when the thermal neutron / fast neutron ratio is 30 or less, too many fast neutrons having kinetic energy cause damage to the single crystal body to the extent that residual defects are generated to the extent that recovery cannot be achieved by heat treatment. It has been confirmed that it will be done.
【００２８】尚、上述した固体撮像装置を構成する半導
体基板は、通常ＣＺ法、ＭＣＺ法によって形成した単結
晶インゴットから切り出して構成されるが、ＦＺ法等に
よって構成することもできる。The semiconductor substrate constituting the above-mentioned solid-state image pickup device is usually formed by cutting out a single crystal ingot formed by the CZ method or MCZ method, but it may be formed by the FZ method or the like.
【００２９】また、本発明方法は、上述の固体撮像装置
に限られるものではなく、ＭＯＳトランジスタ（絶縁ゲ
ート電界効果型トランジスタ）、バイポーラトランジス
タもしくはそれらの半導体集積回路を始めとして種々の
半導体装置を構成する半導体基板および半導体装置を得
る場合に適用できるものである。The method of the present invention is not limited to the solid-state image pickup device described above, and various semiconductor devices including MOS transistors (insulated gate field effect transistors), bipolar transistors or semiconductor integrated circuits thereof can be formed. The present invention can be applied when obtaining a semiconductor substrate and a semiconductor device that are manufactured.
【００３０】[0030]
【発明の効果】上述したように本発明によれば、金属不
純物濃度が低く、結晶欠陥を減少させた半導体Ｓｉ基板
を構成できる。したがって、例えばＣＣＤ型固体撮像装
置に適用して、この結晶欠陥や、重金属不純物による、
白点、白傷の発生、ダーク等の撮像装置において致命的
欠陥の発生を効果的に改善でき、信頼性の向上、歩留り
の向上をはかることができるものである。As described above, according to the present invention, a semiconductor Si substrate having a low metal impurity concentration and reduced crystal defects can be constructed. Therefore, for example, when applied to a CCD type solid-state imaging device, due to the crystal defects and heavy metal impurities,
It is possible to effectively improve the occurrence of a fatal defect in an image pickup device such as occurrence of white spots, white scratches, and darkness, and improve reliability and yield.
【００３１】また、本発明によれば、内部析出物形成の
熱処理工程を８００℃以下にできることから、この熱処
理を半導体装置の製造工程で伴う熱処理で行うことがで
き、製造工程の簡略化をはかることができるものであ
る。Further, according to the present invention, since the heat treatment step for forming the internal precipitate can be set to 800 ° C. or lower, this heat treatment can be performed by the heat treatment involved in the semiconductor device manufacturing process, and the manufacturing process can be simplified. Is something that can be done.
【図１】本発明による半導体基板および半導体装置の製
造方法を適用する半導体装置の一例の概略断面図であ
る。FIG. 1 is a schematic cross-sectional view of an example of a semiconductor device to which a method for manufacturing a semiconductor substrate and a semiconductor device according to the present invention is applied.
【図２】本発明製造方法によって得た固体撮像装置の白
傷欠陥の測定結果を示す図である。FIG. 2 is a diagram showing a measurement result of a white defect of a solid-state imaging device obtained by a manufacturing method of the present invention.
１ 半導体基板 ２２ 受光部 ２３ シフトレジスタ部 1 Semiconductor substrate 22 Light receiving part 23 Shift register section
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/322 H01L 21/261 H01L 27/14 - 27/148 C30B 29/06 C30B 31/20 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/322 H01L 21/261 H01L 27/14-27/148 C30B 29/06 C30B 31/20
Claims (3)
より大で１，０００未満である中性子照射炉を用いて、
酸素濃度が９×１０ 17 atoms/cm 3 以上であるシリコン単
結晶体に中性子照射を行い、 その後イントリンシック・ゲッタリング効果を得る酸素
外方拡散の熱処理を１，０００℃以上で行い、 更に内部析出物形成の熱処理を８００℃以下で行って シ
リコン基板を得ることを特徴とする半導体基板の製造方
法。1. The thermal neutron / fast neutron abundance ratio is 30.
With a neutron irradiation furnace that is greater than less than 1,000 ,
Oxygen concentration have rows neutron irradiation to the silicon single crystal is 9 × 10 17 atoms / cm 3 or more, the oxygen then obtain intrinsic gettering effect
A method of manufacturing a semiconductor substrate, wherein a heat treatment for outward diffusion is performed at 1,000 ° C. or higher, and a heat treatment for forming an internal precipitate is performed at 800 ° C. or lower to obtain a silicon substrate.
あるシリコン単結晶体より成るシリコン基板に対し、熱
中性子／高速中性子の存在比が、３０より大で１，００
０未満である中性子照射炉を用いて中性子照射を行う工
程と、１，０００℃以上の温度で イントリンシック・ゲッタリ
ング効果を得る酸素外方拡散の熱処理を行う工程と、８００℃以下の温度で 内部析出物形成の熱処理を行う工
程とを有することを特徴とする半導体装置の製造方法。2. The oxygen concentration is 9 × 10 17 atoms / cm 3 Above
The thermal neutron / fast neutron abundance ratio of greater than 30 and 1.00 for a silicon substrate composed of a certain silicon single crystal
And performing neutron irradiation with neutron irradiation furnace is less than 0, and performing heat treatment of outward diffusion of oxygen to obtain the intrinsic gettering effect at temperatures above 1,000 ° C., 800 ° C. below the temperature And a step of performing a heat treatment for forming an internal precipitate.
することを特徴とする請求項２記載の半導体装置の製造
方法。3. The method of manufacturing a semiconductor device according to claim 2 , wherein a solid-state image sensor is formed on the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27025795A JP3533783B2 (en) | 1995-10-18 | 1995-10-18 | Semiconductor substrate and semiconductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27025795A JP3533783B2 (en) | 1995-10-18 | 1995-10-18 | Semiconductor substrate and semiconductor device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09115848A JPH09115848A (en) | 1997-05-02 |
| JP3533783B2 true JP3533783B2 (en) | 2004-05-31 |
Family
ID=17483734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27025795A Expired - Fee Related JP3533783B2 (en) | 1995-10-18 | 1995-10-18 | Semiconductor substrate and semiconductor device manufacturing method |
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| Country | Link |
|---|---|
| JP (1) | JP3533783B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030062213A (en) * | 2002-01-14 | 2003-07-23 | 러셀 라이스트 존 | A semiconductor detector for thermal neutrons based on pyrolytic boron nitride |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005322712A (en) * | 2004-05-07 | 2005-11-17 | Toyota Motor Corp | Semiconductor substrate, semiconductor device, and their manufacturing method |
| JP2008303078A (en) * | 2007-06-05 | 2008-12-18 | Japan Atomic Energy Agency | Method for producing silicon thin film or isotopically enriched silicon thin film |
| JP5343371B2 (en) | 2008-03-05 | 2013-11-13 | 株式会社Ｓｕｍｃｏ | Silicon substrate and manufacturing method thereof |
| EP3113224B1 (en) * | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
-
1995
- 1995-10-18 JP JP27025795A patent/JP3533783B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030062213A (en) * | 2002-01-14 | 2003-07-23 | 러셀 라이스트 존 | A semiconductor detector for thermal neutrons based on pyrolytic boron nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09115848A (en) | 1997-05-02 |
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