TW200520052A - Exposure apparatus, exposure method, and device-producing method - Google Patents
Exposure apparatus, exposure method, and device-producing methodInfo
- Publication number
- TW200520052A TW200520052A TW093132654A TW93132654A TW200520052A TW 200520052 A TW200520052 A TW 200520052A TW 093132654 A TW093132654 A TW 093132654A TW 93132654 A TW93132654 A TW 93132654A TW 200520052 A TW200520052 A TW 200520052A
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- substrate
- exposure
- optical system
- projection optical
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003366914 | 2003-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200520052A true TW200520052A (en) | 2005-06-16 |
TWI373063B TWI373063B (zh) | 2012-09-21 |
Family
ID=34510271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093132654A TW200520052A (en) | 2003-10-28 | 2004-10-28 | Exposure apparatus, exposure method, and device-producing method |
Country Status (6)
Country | Link |
---|---|
US (3) | US7932996B2 (zh) |
EP (1) | EP1679738A4 (zh) |
JP (1) | JP4605014B2 (zh) |
KR (1) | KR101121260B1 (zh) |
TW (1) | TW200520052A (zh) |
WO (1) | WO2005041276A1 (zh) |
Families Citing this family (28)
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KR101124179B1 (ko) | 2003-04-09 | 2012-03-27 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
KR101590686B1 (ko) * | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
TWI457712B (zh) | 2003-10-28 | 2014-10-21 | 尼康股份有限公司 | 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法 |
JP4605014B2 (ja) * | 2003-10-28 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、デバイスの製造方法 |
TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1881521B1 (en) | 2005-05-12 | 2014-07-23 | Nikon Corporation | Projection optical system, exposure apparatus and exposure method |
CN101438385B (zh) * | 2006-05-10 | 2011-02-16 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
US8564759B2 (en) * | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
SG143137A1 (en) | 2006-11-13 | 2008-06-27 | Asml Netherlands Bv | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system |
JP4902505B2 (ja) * | 2006-12-07 | 2012-03-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5055549B2 (ja) * | 2007-03-22 | 2012-10-24 | 国立大学法人宇都宮大学 | 液浸露光装置 |
US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
EP2179330A1 (en) | 2007-10-16 | 2010-04-28 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
KR101546987B1 (ko) | 2007-10-16 | 2015-08-24 | 가부시키가이샤 니콘 | 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법 |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
JP5360057B2 (ja) | 2008-05-28 | 2013-12-04 | 株式会社ニコン | 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法 |
NL2003333A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2006389A (en) | 2010-04-15 | 2011-10-18 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and a device manufacturing method. |
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US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
ATE404906T1 (de) * | 1996-11-28 | 2008-08-15 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
DE69717975T2 (de) * | 1996-12-24 | 2003-05-28 | Asml Netherlands Bv | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
KR20050035890A (ko) | 2002-08-23 | 2005-04-19 | 가부시키가이샤 니콘 | 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법 |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
AU2003276569A1 (en) * | 2002-12-13 | 2004-07-09 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
ES2268450T3 (es) | 2002-12-19 | 2007-03-16 | Koninklijke Philips Electronics N.V. | Metodo y dispositivo para irradiar puntos en una capa. |
JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
KR20140139139A (ko) * | 2003-04-10 | 2014-12-04 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
CN105700301B (zh) * | 2003-04-10 | 2018-05-25 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境*** |
JP2004320016A (ja) * | 2003-04-11 | 2004-11-11 | Nikon Corp | 液浸リソグラフィシステム |
WO2004112108A1 (ja) * | 2003-06-13 | 2004-12-23 | Nikon Corporation | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494079B1 (en) * | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographic Apparatus |
DE602004030247D1 (de) * | 2003-07-09 | 2011-01-05 | Nippon Kogaku Kk | Belichtungsvorrichtung und verfahren zur bauelementherstellung |
KR101590686B1 (ko) * | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP4605014B2 (ja) * | 2003-10-28 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、デバイスの製造方法 |
-
2004
- 2004-10-25 JP JP2005514993A patent/JP4605014B2/ja not_active Expired - Fee Related
- 2004-10-25 WO PCT/JP2004/015796 patent/WO2005041276A1/ja active Application Filing
- 2004-10-25 KR KR1020067010221A patent/KR101121260B1/ko active IP Right Grant
- 2004-10-25 EP EP04792927A patent/EP1679738A4/en not_active Withdrawn
- 2004-10-28 TW TW093132654A patent/TW200520052A/zh not_active IP Right Cessation
-
2006
- 2006-04-20 US US11/407,210 patent/US7932996B2/en not_active Expired - Fee Related
-
2011
- 2011-03-21 US US13/064,361 patent/US8272544B2/en not_active Expired - Fee Related
-
2012
- 2012-08-22 US US13/591,583 patent/US8797506B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4605014B2 (ja) | 2011-01-05 |
KR20060128877A (ko) | 2006-12-14 |
US20110189613A1 (en) | 2011-08-04 |
US8272544B2 (en) | 2012-09-25 |
US8797506B2 (en) | 2014-08-05 |
US7932996B2 (en) | 2011-04-26 |
EP1679738A1 (en) | 2006-07-12 |
KR101121260B1 (ko) | 2012-03-23 |
EP1679738A4 (en) | 2008-08-06 |
JPWO2005041276A1 (ja) | 2007-04-26 |
US20120320350A1 (en) | 2012-12-20 |
WO2005041276A1 (ja) | 2005-05-06 |
TWI373063B (zh) | 2012-09-21 |
US20070002299A1 (en) | 2007-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |