TW200504202A - Remover liquid and removing method for antireflective film and buried material containing silicon - Google Patents

Remover liquid and removing method for antireflective film and buried material containing silicon

Info

Publication number
TW200504202A
TW200504202A TW093116714A TW93116714A TW200504202A TW 200504202 A TW200504202 A TW 200504202A TW 093116714 A TW093116714 A TW 093116714A TW 93116714 A TW93116714 A TW 93116714A TW 200504202 A TW200504202 A TW 200504202A
Authority
TW
Taiwan
Prior art keywords
material containing
containing silicon
antireflective film
remover liquid
buried material
Prior art date
Application number
TW093116714A
Other languages
Chinese (zh)
Inventor
Shingo Nakamura
Takehiko Kezuka
Fumihiro Kamiya
Takashi Kanemura
Mitsushi Itano
Original Assignee
Daikin Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Ind Ltd filed Critical Daikin Ind Ltd
Publication of TW200504202A publication Critical patent/TW200504202A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Emergency Medicine (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Paints Or Removers (AREA)

Abstract

A remover liquid for removing an antireflective film and a buried material containing silicon is disclosed which contains at least one material selected from the group consisting of organic acids and organic solvents, and a hydrogen fluoride (HF). Also disclosed is a method for removing an antireflective film and/or a buried material containing silicon using such a remover liquid.
TW093116714A 2003-06-10 2004-06-10 Remover liquid and removing method for antireflective film and buried material containing silicon TW200504202A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003165683A JP2006098421A (en) 2003-06-10 2003-06-10 Removing liquid and removing method for antireflection film and buried material containing silicon

Publications (1)

Publication Number Publication Date
TW200504202A true TW200504202A (en) 2005-02-01

Family

ID=33549225

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116714A TW200504202A (en) 2003-06-10 2004-06-10 Remover liquid and removing method for antireflective film and buried material containing silicon

Country Status (3)

Country Link
JP (1) JP2006098421A (en)
TW (1) TW200504202A (en)
WO (1) WO2004112115A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
EP1680806A4 (en) * 2003-10-28 2008-07-30 Sachem Inc Cleaning solutions and etchants and methods for using same
DE102006030588A1 (en) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Liquid-jet-guided etching process for removing material from solids and its use
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
JP5913869B2 (en) * 2011-08-31 2016-04-27 林純薬工業株式会社 Etching solution composition and etching method
JP6063404B2 (en) * 2014-02-28 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and method for manufacturing semiconductor substrate product
JP2018128476A (en) * 2015-06-19 2018-08-16 富士フイルム株式会社 Pattern forming method and method for manufacturing electronic device
US11807792B2 (en) * 2020-03-19 2023-11-07 Tokyo Ohka Kogyo Co., Ltd. Semiconductor processing liquid and method for processing substrate
TW202200756A (en) 2020-03-19 2022-01-01 日商東京應化工業股份有限公司 Semiconductor processing liquid and method for processing substrate
JP7407324B1 (en) * 2023-06-15 2023-12-28 東京応化工業株式会社 Processing liquid for semiconductor devices, substrate processing method, and semiconductor device manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3902798B2 (en) * 1994-10-05 2007-04-11 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Rinse solution and rinse method
KR100360397B1 (en) * 1999-11-26 2002-11-18 삼성전자 주식회사 Resist removing composition and resist removing method using the same
JP2002169305A (en) * 2000-12-04 2002-06-14 Dainippon Screen Mfg Co Ltd Polymer removing solution and apparatus for removing polymer

Also Published As

Publication number Publication date
JP2006098421A (en) 2006-04-13
WO2004112115A1 (en) 2004-12-23

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