TW200504202A - Remover liquid and removing method for antireflective film and buried material containing silicon - Google Patents
Remover liquid and removing method for antireflective film and buried material containing siliconInfo
- Publication number
- TW200504202A TW200504202A TW093116714A TW93116714A TW200504202A TW 200504202 A TW200504202 A TW 200504202A TW 093116714 A TW093116714 A TW 093116714A TW 93116714 A TW93116714 A TW 93116714A TW 200504202 A TW200504202 A TW 200504202A
- Authority
- TW
- Taiwan
- Prior art keywords
- material containing
- containing silicon
- antireflective film
- remover liquid
- buried material
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 4
- 230000003667 anti-reflective effect Effects 0.000 title abstract 3
- 239000007788 liquid Substances 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 235000005985 organic acids Nutrition 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Emergency Medicine (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Paints Or Removers (AREA)
Abstract
A remover liquid for removing an antireflective film and a buried material containing silicon is disclosed which contains at least one material selected from the group consisting of organic acids and organic solvents, and a hydrogen fluoride (HF). Also disclosed is a method for removing an antireflective film and/or a buried material containing silicon using such a remover liquid.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003165683A JP2006098421A (en) | 2003-06-10 | 2003-06-10 | Removing liquid and removing method for antireflection film and buried material containing silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200504202A true TW200504202A (en) | 2005-02-01 |
Family
ID=33549225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093116714A TW200504202A (en) | 2003-06-10 | 2004-06-10 | Remover liquid and removing method for antireflective film and buried material containing silicon |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2006098421A (en) |
TW (1) | TW200504202A (en) |
WO (1) | WO2004112115A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI282814B (en) * | 2002-09-13 | 2007-06-21 | Daikin Ind Ltd | Etchant and etching method |
EP1680806A4 (en) * | 2003-10-28 | 2008-07-30 | Sachem Inc | Cleaning solutions and etchants and methods for using same |
DE102006030588A1 (en) * | 2006-07-03 | 2008-01-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Liquid-jet-guided etching process for removing material from solids and its use |
US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
JP5913869B2 (en) * | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | Etching solution composition and etching method |
JP6063404B2 (en) * | 2014-02-28 | 2017-01-18 | 富士フイルム株式会社 | Etching solution, etching method using the same, and method for manufacturing semiconductor substrate product |
JP2018128476A (en) * | 2015-06-19 | 2018-08-16 | 富士フイルム株式会社 | Pattern forming method and method for manufacturing electronic device |
US11807792B2 (en) * | 2020-03-19 | 2023-11-07 | Tokyo Ohka Kogyo Co., Ltd. | Semiconductor processing liquid and method for processing substrate |
TW202200756A (en) | 2020-03-19 | 2022-01-01 | 日商東京應化工業股份有限公司 | Semiconductor processing liquid and method for processing substrate |
JP7407324B1 (en) * | 2023-06-15 | 2023-12-28 | 東京応化工業株式会社 | Processing liquid for semiconductor devices, substrate processing method, and semiconductor device manufacturing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3902798B2 (en) * | 1994-10-05 | 2007-04-11 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Rinse solution and rinse method |
KR100360397B1 (en) * | 1999-11-26 | 2002-11-18 | 삼성전자 주식회사 | Resist removing composition and resist removing method using the same |
JP2002169305A (en) * | 2000-12-04 | 2002-06-14 | Dainippon Screen Mfg Co Ltd | Polymer removing solution and apparatus for removing polymer |
-
2003
- 2003-06-10 JP JP2003165683A patent/JP2006098421A/en active Pending
-
2004
- 2004-06-09 WO PCT/JP2004/008411 patent/WO2004112115A1/en active Application Filing
- 2004-06-10 TW TW093116714A patent/TW200504202A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2006098421A (en) | 2006-04-13 |
WO2004112115A1 (en) | 2004-12-23 |
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