玫、發明說明： 【發明所屬之技術領域】 本發明係關於在半導體基板、液晶顯示裝置用玻璃基板 、光罩用《基板及光碟用基板朴x下稱「基板」）上進行 特定處理之基板處理，特別係關於使賦予基板之處理流體 之狀況及賦予基板之熱流之狀況均一用之改良。 【先前技術】 半導體及液晶顯示裝置等製品係使用氟酸、純水等（以下 亦稱「處理气」），及經電漿化之氮氣、臭氧氣（以下亦稱「處 理氣體」），藉由實施各種基板處理來製造。已知如使用處理 氣體之基板處理，係在大致大氣壓下，對基板供給電漿化 之氣體（以下，將氣體經過電漿化者，統稱為「電漿氣體」） 進行除去附著於基板上之有機物之處理。 圖23係於基板上排出電漿氣體，除去附著於基板上之有 機物（如光阻殘渣）之先前基板處理裝置5〇〇之正面圖。配置 木基板處理裝置5〇〇之處理室51〇内之排出噴嘴52〇，係將自 處理氣體供給源521供給之處理氣體（如氮氣）予以電漿化而 供給至基板W之噴嘴。基板處理裝置500藉由搬運滾筒515 ，使基板W在X軸正（pius)方向上移動，同時藉由自排出噴 > 520供給電漿氣體作為氣體流凡“，可除去附著於基板上 之有機物。 此外’於處理立5 10之上部配置過滤器單元5 11。過滤器 單元5 11除去基板處理裝置5〇〇自配置之潔淨室内取得之空 氣中所含之微粒子，於處理室51〇内供給潔淨化之空氣。此 88108.doc 200410765 外，於處理室5 10之下部，經由配管545連通連接排氣泵541 ，處理室510之氣氛排氣至工廒内之排氣口 540。因而，於 處理室510内形成有潔淨之空氣流FL82。 圖24係顯示處理室510内之電漿氣體流FL81及空氣流 FL82之圖。如圖24所示，電漿氣體之氣體流FL81自排出噴 嘴520排出，並經由處理室510内之空間到達基板W。此外 ，於處理室510内存在自過濾器單元511供給之潔淨空氣流 FL82。因而，降低自排出噴嘴520排出之電漿氣體之流速時 ，自排出喷嘴520之端緣部附近排出之電漿氣體之氣體流 FL81a受空氣流FL82b之影響而混亂。導致無法均一地供給 電漿氣體至基板W上，整個基板W無法均一地進行除去有機 物之處理。亦即，到達基板W中央部之氣體流FL8 lb與到達 基板W之端緣部之氣體流FL8 la不同，因電漿氣體之供給狀 態不同，導致在基板W之端緣部與中央部除去有機物之處 理結果不同。 因而，在空氣流存在之氣氛中，供給處理氣體至基板上 來實施基板處理時，存在受到空氣流之影響，而無法均一 地實施基板處理之問題。 而此種問題並不限定於藉由電漿氣體等處理氣體實施基 板處理時，如於空氣流存在之氣氛中供給處理液時亦產生 問題。 再者，影響基板處理均一性之因素，並不限定於空氣流， 在對基板供給熱之加熱處理中，亦因熱對流及熱放射之狀 88108.doc 200410765 =均二’無法將基板予以均一地加熱，所以熱對流及熱 7 ㈣空氣流同樣地成為影響基板處理均一性之因素 因而=發明之第—目的，在提供—種可使整個基板獲得 ㈣：:結果，即使在空氣流存在之氣氛中，空氣流不 w曰句性之基板處理裝置。 本&明n目的’在提供_種不受熱對流之影響，可 使整個基板獲得均—之處理結果之基板處理。a 【發明内容】 述問題，申請專利範圍第丨項發明之基板處理 處理室内，並自存在於〜f#排出機構’其係配置於前述 自存在“核理室内之基板上方，對前述 處理流體；移動機構’其係使前述基板沿著特定 :二：：移動；及整流機構，其係設於前述基板近旁， 知則述基板近旁之氣流予以整流。 申請專利範圍第2項之私日日 基板處理裝置，其中;^其/係如申請專利範圍第1項之 /、則U 土板係角型基板，前述整流機構 係具備弟一整流板，並 /、、則述角型基板之端緣部近旁， 且對則述心基板之移動方向大致平行地配置。 申广㈣圍第3項之發明，係如申請專利範圍第2項之 基板處理裝置，並φ今#、、 # % ^ —月，正》見機構進一步具備第二整流板 ，其係配置於前述角型基板之下方。 申：專利範園第㈣之發明，係如申請專利範圍第2項之 基板處理裝置，並φ |、+ 、” 1 U夕動機構配置於前述角型基板之 下万~ Xt “機構進一步具備前述第三整流板，其係在 88108.doc 200410765 1角=基板下方，配置成與前述移動機構大致同高。 申印專利範園第5項之發明，係 基板虛if共士菩 4 甲叫專利範圍第3項之 I扳處理衣置，其中進一步具 述基板之上方，义、f _ 狀叹風組，其係設於前 二 万並包圍則述處理流體之排出路徑。 申凊專利範圍第6項之發明，#々 u 士 係如申請專利範圍第5項之 土板處理裝置，其中前述排出機 板之寬度以上。 心排出口見度為前述基 申凊專利範園第7項之發明 基板虛…Γ 申請專利範圍第6項之 n 了：/、中爾述處理流體係電漿化氣體，前述氣 氣、氧氣、惰性氣體或此等之混合氣體。 申睛專利範圍第8項之發明 甘』士 係如申請專利範圍第7項之 基板處理裝置，其中前述第一 耐性之透明構件。 ^係對㈣處理流體具 申請專利範圍第9項之發明，#如 ,,^ 係如申請專利範圍第8項之 基板處理裝置，其中前述第—整流板_㈣。 申請專㈣園第则之發明，係如中請專利範圍第7項之 基板處理裝置，其中前述第二敕、、云 一 正机板係對前述處理流體具 耐性之透明構件。 申請專利範圍第11項之發明 知明係如申請專利範圍第10項 之基板處理裝置，其中前述第-敕、、云 ' 罘一整泥板係藉由玻璃而形成。 申請專利範圍第12項之發明，係如中請㈣範圍第7項之 基板處理裝置，其中前”二整流板之上面與前述搬運路 徑上之基板下面之距離為5 () mm以下。 申請專利範圍第13項發明之基板處理裝置之特徵為具備 88108.doc 200410765 吏皇棑出機構，其係配置於前述處理室内、、 在於前述處理室内之基板上方，對前述基板排出處= ;及移_構’其係使前述基板沿著特定之搬運 = =述::之移動方向大致垂直之方向之前述移::: T大於與前述移動方向大致垂直之方向之前述基板 I尺寸，珂述搬運路徑之下方係藉由前述移動機構大致閉 鎖。 申請專利範m第14項發明之基板處理裝置之特徵為具備 :處理室；驾持機構，其係設於前述處理室内，並保持前 述基板；排_出機構，其係設於前述處理室内，自上方對前 述基板排出處理流體，並在前述基板上移動；及整流機2 ，其係設於前述基板近旁，並將前述基板近旁之氣流予以 整流。 申請專利範圍第15項之發明，係如申請專利範圍第丨斗項 之基板處理裝置，其中前述基板係角型基板，前述整流機 構係配置於前述角型基板周圍之板狀體。 申請專利範圍第16項發明之基板處理裝置之特徵為具備 :處理室；保持機構，其係設於前述處理室内，並保持前 述基板’加熱機構’其係將被前述保持機構所保持之前述 基板予以加熱；及聲流機構，其係設於前述基板近旁，並 將前述基板近旁之熱流予以整流。 申請專利範圍第1至12項之發明，沿著特定之搬運路徑移 動處理槽内之基板，並自排出機構對基板排出處理流體時 ，藉由於基板近旁設置整流機構，可防止於基板端緣部， 88108.doc -10- 200410765 處理流體之流動受到處理室内之氣流影響而混亂。因而基 板端緣部與基板中央部之處理流體可均一地流動，於基板 端緣部與基板中央部可獲得均一之處理流體對基板之處理 結果。 特別是申請專利範圍第2項之發明，藉由在角型基板端緣 部之近旁，與該角型基板之移動方向大致平行地配置第一 整流板作為整流機構，可防止排至角型基板端緣部之處理 流體之混亂，因此在角型基板之端緣部與中央部可獲得均 一之處理結果。 — 特別是申請專利範圍第3項之發明，其整流機構除第一整 流板之外，藉由在角型基板下方配置第二整流板，於角型 基板之前端部到達排出區域前後，可抑制處理室内之氣流 之影響，使處理流體之流動均一。此外，同樣地，於角型 基板之後端部移動至排出區域外前後，仍可不受處理室内 之氣流影響，使處理流體之流動均一。因此在角型基板之 前端部及後端部與中央部可獲得均一之處理結果。 特別是申請專利範圍第4項之發明，係在基板下方配置移 動機構，並且其整流機構除第一整流板之外，藉由在與移 動機構大致同高地配置第三整流板，可縮短基板與第三整 流板之距離。因此可進一步促使角型基板之前端部藉由移 動機構到達排出區域内前後，及角型基板之後端部移動至 排出區域外前後之處理流體之流動均一，在角型基板之前 端部及後端部與中央部可進一步獲得均一之處理結果。 特別是申請專利範圍第5項之發明，藉由以筒狀護蓋體包 88108.doc -11 - 200410765 圍排出路徑，可進一步促使處理流體之流動均一，因此可 進一步獲得均一之基板處理結果。 特別是申請專利範圍第6項之發明，由於排出機構之排出 口寬度為基板之寬度以上，可充分排出處理流體至基板之 排出機構側之面上，因此可有效實施基板處理。 特別是申請專利範圍第7項之發明，由於係將廉價之氮氣 等予以電漿化作為處理流體，來進行基板處理，因此可降 低基板處理裝置之運作成本。 特別是申請專利範圍第8項之發明，由於第一整流板對處 — 理流體具耐性，因此，即使處理流體沖擊第一整流板，處 理流體不影響基板之處理結果，可有效實施基板處理。此 外，由於第一整流板係以透明構件而形成，因此可經由第 一整流板來觀察處理流體之排出狀況。 特別是申請專利範圍第9項之發明，由於第一整流板係藉 由玻璃而形成，因此可有效實施基板處理。並可經由玻璃 所形成之第一整流板觀察處理流體之排出狀況。 特別是申請專利範圍第10項之發明，由於第二整流板對 處理流體具耐性，因此即使處理流體沖擊第二整流板，處 理流體仍不影響基板之處理結果，而可有效實施基板處理 。此外，由於第二聱流板係以透明構件形成，因此可經由 第二整流板觀察處理流體之排出狀況。 特別是申請專利範圍第11項之發明，由於第二整流板係 藉由玻璃而形成，因此可有效實施基板處理。並可經由玻 璃所形成之第二整流板觀察處理流體之排出狀況。 88108.doc -12- 200410765 特別是_請專利範圍第12項之發明，藉由使第二整流板 之上面與前述搬運路徑上之基板之下面之距離為5 〇 mm以 下，可進一步促使處理流體之流動均一。因而可進一步獲 得均一之處理流體對基板之處理結果。 申清專利範圍第13項之發明，沿著特定之搬運路徑移動 處理才曰内之基板，並自排出機構對基板排出處理流體時， 藉由使與基板移動方向大致垂直之方向之移動機構之尺寸 大於基板之尺寸，藉由移動機構大致閉鎖搬運路徑之下方 ，可防止於義板端緣部，處理流體之流動受到處理室内之 氣流影響而混亂。因而基板端緣部與基板中央部之處理流 體可均一地流動，於基板端緣部與基板中央部可獲得均一 之處理流體對基板之處理結果。 申請專利範圍第14及15項之發明，移動排出機構，並自 =排出機構對基板排出處理流體時，藉μ基板近旁設置 整^機構，可防止於基板端緣部，處理流體之流動受到處 理室内之氣流影響而混亂。因而基板端緣部與基板中央部 <處理_ 可均一地流動，於基板端緣部與基板中央部可 獲得均一之處理流體對基板之處理結果。 特別是申請專利範園第15項之發明，藉由於角型基板周 圍配置板狀體作為整流機構，在角型基板之端緣部與中央 部可獲得均一之處理結果。 ^別是中請專利範圍第16項之發明，藉由於基板近旁設 構’可使絲端㈣之熱流與純巾㈣之熱流 因此在基板各部可獲得均—之加熱狀況。 88108.doc -13- 200410765 【實施方式】 以下，參照圖式詳細說明本發明之實施形態。 < 1 ·第一種實施形態> <1 · 1 ·第一種實施形態之基板處理裝置之構造〉 圖1係模式顯示本發明第一種實施形態之基板處理裝置1 之正面圖。此外，圖2係模式顯示第一種實施形態之基板處 理裝置1之側面圖。另外，圖1及以後之各圖，為求明確此 等之方向關係，依需要附記將Z軸方向作為垂直方向，將 XY平面作為jc平平面之ΧΥΖ正交座標系統。 弟種A知形怨之基板處理裝置1係配置於洗淨處理單 元之前或後，除去移動角型基板w，並在大致大氣壓下， 自排出噴嘴20排出經電漿化之處理氣體（電漿氣體）至基板 W上，而附著於基板…上之有機物等污染物之裝置。如圖} 所不，基板處理裝置i主要係由：處理室1〇、排出噴嘴、 搬運滾筒15、侧面整流板3〇及下部整流板31構成。 處理室10係於其内部收容：排出噴嘴20、側面整流板3〇 、:部整流板31等之框體。如圖请示，與處理室1〇之錄 ^ 2 ί’1]面4上刀w设有開口部12a，l2b。基板w係藉由搬 運：同15’自開口部12a搬入處理室1〇内部，藉由搬運滾筒 15移動’並藉由後述之電漿氣體實施基板處理。而後，於 基板處理結束後，自開口部12b搬出至處理室i叫部。如此 ’、=由搬運滾筒15，沿著大致水平之搬運路徑，在箭頭规 =上搬運移動基板W，並藉由供給電漿氣體於基板w上， 來進行基板處理。 88108.doc •14- 200410765 如圖1及圖2所示，搬運滾筒15係由配置於χ轴方向上之數 組滾筒群而構成，該滾筒群係將配置於與，垂直之方向上 、、3個滾筒為一組。各滾筒連接於圖上未顯示之驅動馬達， 並知平行於γ軸之軸作為旋轉軸而旋轉。因而搬運滚筒15 可使其上所搭載之基板…在又軸之正方向或負方向上直線 地移動。 ‘川态16係使用於檢測搬運在搬運滾筒丨5上之基板.位 置 < 非接觸式感測器，其配置於排出噴嘴2〇正下方近旁之 叛運滾筒15g近。各感測器16a，16b於其正上方搬運基板 W時，自「斷開」狀態切換成「接通」狀態。因此，藉由 木八且兩個感測态iga ’及igb之「接通」、「斷開」狀態， 即可檢測排出噴嘴20下方之基板W之位置（如對箭頭AR1方 向，基板W之前端是否進入排出噴嘴2〇正下方近旁之位置 等）。 於處理室10之上部配置有過濾器單元丨丨。過滤器單元丄i 係將自配置基板處理裝置1之潔淨室内取得之空氣，經由設 於過滤器單元11内部之過濾器（如HEPA過濾器··省略圖式） 供給至處理室1〇内部之單元。因而，該空氣内所含之微粒 子等污染物藉由通過過滤器單元11而被除去，可將潔淨化 之空氣供給至處理室1 〇内。 此外’如圖1所示’於處理室1 〇之下邵，經由配管4 5 b連 通連接有排氣泵41。因而，處理室10内之氣氛係藉由排氣 泵4 1排氣，並經由配管45a排出至基板處理裝置1外之排氣 口 40。 88108.doc -15- 200410765 如此，自處理室10上部，經由過濾器單元11供給之潔淨 化空氣，係藉由連接於處理室10下部之排氣泵41而排出至 排氣口 40，因此於處理室10内部之氣氛中形成潔淨之朝下 的空氣流FL12。 如圖1及圖2所示，排出喷嘴20係於處理室10内部，設於 基板W之搬運路徑上方之喷嘴，並經由配管25 (25 a〜25 c)、 過濾器23及閥門22而與處理氣體供給源2 1連通連接。因此 ，藉由開放閥門22，於排出喷嘴20内供給藉由過濾器23除 去微粒子之處理氣體。此時所謂處理氣體，係在進行基板 —^ 處理之環境中，化學性穩定之氣體，並使用氮氣、氬氣、 氦氣等惰性氣體。但是，考慮基板處理裝置1之運作成本時 ，與氬氣及氦氣比較，宜使用廉價之氮氣作為處理氣體。 另外，對基板W無不良影響時，亦可向基板W排出將空氣 及氧氣予以電漿化之氣體。再者，亦可為混合處理氣體、 氧氣及空氣中之兩種以上之氣體。 此外，如圖3所示，於排出喷嘴20内部配置有兩片電極20a ，藉由在此等兩片電極20a上賦予電位差，在大致大氣壓下 ，將處理氣體供給源21供給之處理氣體予以電漿化。因而 在大致大氣壓下經電漿化之處理氣體（電漿氣體）係自排出 噴嘴20朝向下方排出，而形成氣體流FL11。 另外，為求自排出喷嘴20排出之電漿氣體可充分供給基 板W，排出噴嘴20之Y軸方向（亦即與基板W之搬運方向正交 之方向）之喷嘴寬度D1係設計成大於基板W之Y軸方向之寬 度D2 (參照圖2)。 88108.doc -16- 200410765 如圖1及圖2所示，側面整流板3〇係兩片板狀構件，並在 排出噴嘴20正下方近旁，配置成對基板w之行進方向AR1 平行，並夾著基板W之搬運路徑。因此，基板w藉由搬運滾 筒15搬運至排出喷嘴2〇正下方時，側面整流板3 〇在基板w ^緣邵近旁，係位於大致相同平面。 下4 i机板3 1係板狀構件，如圖1及圖2所示，係配置於 排出喷嘴20下方，且搬運滾筒15之下方。因此，基板评藉 由搬運滾筒15搬運至排出噴嘴2〇正下方時，下部整流板3工 係位於基板W之下方。 此時，本實施形態中，側面整流板30及下部整流板3 i係 藉由對該基板處理裝置使用之電漿氣體（如氮電漿氣體）具 耐性之材料（亦即對該電漿氣體化學性及物理性穩定之材 料）之玻璃及石英等形成。因此即使電漿氣體沖擊侧面整流 板30及下部整流板31，仍不影響除去附著於基板％之有機 物’可有效進行有機物之除去處理。一般而言，由於玻璃 =石英等對各種元素之電漿氣體之化學性及物理性之耐性 高，不論使用之處理氣體種類為何，均可廣泛使用作為整 流板30’ 31之材料。此外，因玻璃及石英等係、光學性透明 構件因此使用此等作為整流板3G，3ι之材料時，亦可通 過整流板30，31，自下方觀察排出噴嘴2〇。 =外，使用鏡面素材作為整流板3()，31之材料，將其鏡 面設置成朝向上方與排出噴嘴2G相對時，可利用其鏡面之 反射’自上方觀察排出噴嘴20下側之排出口内#。如此， 形成可觀察排出喷嘴歎構造，村自排㈣嘴Μ之排出 88108.doc -17- 200410765 口，以目視確認排出口内部存在電漿發光，並可以目視確 認排出口之污垢等，可預先防止基於某種原因未生成電漿 ，進行處理失敗。 另外，對各種電漿氣體化學性及物理性穩定之其他材料 ，亦可採用不銹鋼等金屬及氧化鋁等陶瓷來形成侧面整流 板30及下部整流板31。整流板30，31上不要求光學之透明 性時，整流板30，3 1之至少表面部分以耐電漿氣體材料形 成即可，因此，亦可使用以陶瓷塗敷集合體上之表面者作 為整流板30，3 1。如此，於使用不透明之素材，欲觀察排出 喷嘴20之排出口内部時，預先將整流板30，3 1形成可輕易 拆裝之安裝構造，於需要觀察時拆下整流板30，3 1即可。 此外，如上述，本實施形態之側面整流板30及下部整流 板3 1係藉由透明構件形成。藉此，位於基板處理裝置1之外 部，且在夾著侧面整流板30a (或侧面整流板30b)，而與搬 運滚筒15相反侧之基板處理裝置1之操作人員（以下，亦簡 稱「操作人員」），可自基板處理裝置1外部，經由側面整 流板30a或側®整流板30b，觀察自排出噴嘴20排出之電漿 氣體之排出狀況。因此，可藉由操作人員良好地保持電漿 氣體之排出狀況，可良好地進行附著於基板W之有機物之 除去處理。 _ <1.2.藉由整流板進行空氣流之整流> 以下，說明藉由使用側面整流板30及下部整流板3 1，將 處理室10内之空氣流予以整流，不擾亂電漿氣體之氣體流 FL1 1，而供給電漿氣體於基板W上。以下之說明中，首先 88108.doc -18- 200410765 ，（1)說明僅使用側面整流板30時之空氣流之整流，繼續， (2)說明使用側面整流板30及下部整流板3 1時之空氣流之整 流。 <1.2.1.藉由侧面整流板進行空氣流之整流〉 圖4係顯示整流板僅設置側面整流板30時，於基板W之前 端部或後端部以外到達排出噴嘴20之正下方近旁時之基板 處理裝置1之上面圖。此外，圖5係說明基板W之前端部或 後端部以外到達排出噴嘴20之正下方近旁時，處理室10内 之電漿氣體之氣體流FL11與空氣流FL12之圖。 先前之基板處理裝置500 (圖23)，由於未設至側面整流板 ，因此如圖24所示，自排出喷嘴520排出而供給至基板W之 端緣部之電漿氣體之氣體流FL8 1 a，受到自過滤器單元5 11 供給之潔淨空氣流FL82b之影響而混亂。導致基板W中央部 之電漿氣體之氣體流FL81b與氣體流FL81a不均一，無法均 一地供給電漿氣體，因此基板W之中央部與端緣部之處理 結果不同。 而本實施形態之基板處理裝置1，由於在基板W端緣部近 旁設置侧面整流板30，因此如圖5所示，空氣流FL12b係流 入側面整流板30侧方部中之與基板W遠離之側之側方部。 因而供給至基板W端緣部之電漿氣體之氣體流FL11 a不受 空氣流FL12b之影響，不受擾亂地到達基板W，整個基板W 藉由電漿氣體均一地進行基板處理。 因而，藉由於基板W之端緣部設置兩片側面整流板30， 可將空氣流FL12予以整流，可保持基板W端緣部之電漿氣 88108.doc -19- 體之氣體流FLlla與基板W中央部之氣體流FLllb均一，因 此整個基板W可藉由電漿氣體均一地進行基板處理。 但是，如圖6(a)所示，基板W未到達排出噴嘴20之下方， 在排出喷嘴20之正下方近旁不存在基板W時，及如圖6(b) 所示，基板W藉由搬運滾筒15移動之結果，排出噴嘴20之 正下方近旁不存在基板W時，自過濾器單元11供給之潔淨 之空氣流FL22，在側面整流板30之側方部中，區分成流入 遠離基板W搬運部分之側之側方部之空氣流FL22b，及流入 接近基板運部之侧之側方部之空氣流卩1^22(：。而後，空 氣流FL22c經過搬運滾筒15附近而到達處理室10之下部。因 此，排出噴嘴20之正下方近旁不存在基板W時，若自排出 噴嘴20排出電漿氣體，則因空氣流FL22c流動之影響，自排 出喷嘴20端緣部排出之電漿氣體之氣體流FL2la混亂。 如此，自排出噴嘴20排出之電漿氣體之氣體流，於基板 W存在於排出噴嘴20正下方，以及基板W不存在於排出噴嘴 20正下方時不同。因此，僅使用侧面整流板30時，於基板 W到達排出噴嘴20正下方近旁時，以及基板W藉由搬運滾筒 15自排出噴嘴20正下方近旁遠離時，供給至基板W端緣部 之電漿氣體之氣體流混亂，導致基板W端緣部與基板W中央 部之處理結果不均一。 <1.2.2.藉由下部整流板進行空氣流之整流> 以下，說明於基板W下方僅設置作為整流板之下部整流 板3 1時之處理室10内之電漿氣體之氣體流及空氣流，與先 前之基板處理裝置之比較。 88108.doc -20- 200410765 首先，檢討如先前之基板處理裝置500 (圖23)，不使用下 部整流板時之氣體流FL83及空氣流FL84。圖24及圖25係顯 示處理室510内之電漿氣體流FL81、FL83及空氣流FL82、 FL84之圖。 如圖25所示，先前之基板處理裝置500，基板W未到達排 出噴嘴520之下方，排出噴嘴520之正下方近旁不存在基板 W時，以及基板W藉由搬運滾筒15移動之結果，排出喷嘴520 之正下方近旁不存在基板W時，自排出喷嘴520中央部附近 排出之電漿氣體之一部分，通過配置於排出噴嘴520下方之 各搬運滾筒Γ5間，而到達處理室5 1 〇之下部。此外，自排出 噴嘴520排出之電漿氣體中之另一部分藉由搬運滾筒丨5彈 回。亦即，電漿氣體之氣體流FL83b受到排出噴嘴520下方 之硬體配置之影響。藉此，如圖25所示，自排出噴嘴520中 央部附近排出之電漿氣體之氣體流FL83b之方向不均一。 另外’如圖24所示，先前之基板處理裝置5〇〇中，排出喷 嘴520之正下方近旁存在基板w時，電漿氣體之氣體流 FL83b由於不受排出噴嘴52〇下方之硬體配置之影響，因此 氣體流FL83b之方向大致均一。 如此，於先前之基板處理裝置500中，排出喷嘴52〇正下 方近旁存在基板W時之氣體流FL81b之狀況，與排出噴嘴 520正下方近旁不存在基板w時之氣體流FL83b之狀況，與 自排出噴嘴520排出電漿氣體之氣體流之狀況不同。因此， 自基板W到達排出噴嘴520正下方近旁後經過一定時間，供 給至基板W中央部附近之電漿氣體之氣體流處於混亂之狀 88108.doc -21 - 200410765 態。導致基板w中央部附近之有機物除去之處理結果不均 —— 〇 其次，檢討本實施形態之基板處理裝置1設置下部整流板 31時之氣體流FL33及空氣流FL34。圖26係於基板W下方配 置下部整流板3 1時之基板處理裝置1之上面圖。此外，圖27 係基板W於排出噴嘴20下方配置下部整流板3 1時之基板處 理裝置1之側面圖。 如圖26(a)所示，基板W未到達排出噴嘴20下方，在排出 喷嘴20正下方近旁不存在基板W時，藉由設置下部整流板 31，搬運滾筒15之下方區域閉鎖。藉此，不易受排出噴嘴 20下方之硬體配置之影響。因而如圖27所示，自排出噴嘴 20中央部附近排出之電漿氣體之氣體流FL33b之方向均一。 亦即，藉由於基板W下方設置下部整流板3 1，可使自排 出噴嘴20中央部附近排出之電漿氣體之氣體流FL33b之方 向均一。因而於基板W之中央部附近，可藉由電漿氣體有 效進行有機物之除去處理。 但是，即使將下部整流板31設於基板W之下方，如圖27 所示，自排出噴嘴20之端緣部附近排出之電漿氣體之氣體 流FL33a，受到自過漉器單元11供給之潔淨之空氣流FL34b 之影響而混亂。因而，自排出噴嘴20之端緣部供給之電漿 氣體之氣體流FL3 3 a，與自排出噴嘴20中央部排出之氣體流 FL33b比較，其氣體流之方向不均一。 以下，說明顯示設置與不設置下部整流板3 1時之有機物 除去狀況之比較之實驗結果。圖28係顯示不設置下部整流 88108.doc -22- 200410765 板31之基板處理裝, ^ t 丰向基板簡出電聚氣體，來除 去附㈣基板W之有機物時，對應於基板w上之測定點之美 板W表面之接觸角之圖。圖29係顯示僅設 流二 :基板處理裝置1中，向基㈣排出電漿氣體，來除去3 於基板W之有機物時’對應於基板w上之敎點之基板w表 面之接觸角之圖。 另外，圖28及圖29之橫軸，表示於基板w上面，沿著基 板二之寬度方向（Y轴方向），自基板w之—方端緣部二另二 方端緣部，-Ϊ間隔地配置54點之測定點。此外，縱軸表示 各測定點之羞板W上面之接觸角。再者，縱軸之接觸角具 有】達可有效除去附著於基板W之有機物之值。 如圖28及圖29所示，僅使用下部整流板3丨時，各測定點 之接觸角之平均值為26.8 (deg)，小於不使用下部整流板3工 時之各測足點之接觸角之平均值（=43 ·7 (deg))。亦即，如圖 28及圖29所示，確認使用下部整流板31者可有效執行附著 於基板W之有機物之除去。 此外’僅使用下部整流板3 1時，自各測定點之接觸角中 之最大者減去最小者之值（以下亦稱為「R值」）為10.6 (deg) ’ 3倍各測定點之接觸角之標準偏差σ之值（以下，亦稱為 「3σ值」）為5.4 (deg)。亦即僅使用下部整流板31時之R值 及3σ值之各個值，小於不使用下部整流板31時之r值（=437 (deg))及3 σ值（=28·7 (deg))。因此，確認使用下部整流板 者，可均一地向基板W排出電漿氣體之氣體流FL33b。Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate subjected to specific processing on a semiconductor substrate, a glass substrate for a liquid crystal display device, and a "substrate for a substrate and an optical disk" (hereinafter referred to as "substrate"). The treatment is particularly related to the improvement of uniformly applying the condition of the processing fluid to the substrate and the condition of the heat flow to the substrate. [Prior technology] Products such as semiconductors and liquid crystal display devices use fluoric acid, pure water (hereinafter also referred to as "processing gas"), and plasma-converted nitrogen and ozone gas (hereinafter also referred to as "processing gas"). It is manufactured by performing various substrate processes. It is known that if substrate processing using a processing gas is performed, plasma-generating gas is supplied to the substrate at approximately atmospheric pressure (hereinafter, those that have been subjected to plasma-ization, collectively referred to as "plasma gas") to remove the adhered to the substrate. Treatment of organic matter. Fig. 23 is a front view of a conventional substrate processing apparatus 500 which discharges plasma gas on a substrate and removes organic objects (such as photoresist residues) attached to the substrate. The discharge nozzles 52 in the processing chamber 51 of the wooden substrate processing apparatus 500 are arranged as nozzles for supplying a processing gas (e.g., nitrogen) supplied from a processing gas supply source 521 to the substrate W. The substrate processing apparatus 500 moves the substrate W in the positive direction of the X-axis (pius) by the conveying roller 515, and supplies plasma gas as a gas flow by the self-discharge jet> 520, which can remove the adhered to the substrate Organic matter. In addition, a filter unit 5 11 is disposed above the processing stand 5 10. The filter unit 5 11 removes fine particles contained in the air obtained from the clean room provided by the substrate processing apparatus 500, and is disposed in the processing chamber 51. Supply clean air. In addition to 88108.doc 200410765, an exhaust pump 541 is connected to the lower part of the processing chamber 5 10 through a pipe 545, and the atmosphere of the processing chamber 510 is exhausted to the exhaust port 540 in the work chamber. Therefore, A clean air flow FL82 is formed in the processing chamber 510. Fig. 24 is a diagram showing a plasma gas flow FL81 and an air flow FL82 in the processing chamber 510. As shown in Fig. 24, the plasma gas flow FL81 is discharged from the nozzle 520 is discharged, and reaches the substrate W through the space in the processing chamber 510. In addition, there is a clean air flow FL82 supplied from the filter unit 511 in the processing chamber 510. Therefore, the plasma gas discharged from the discharge nozzle 520 is reduced. At the flow rate, the gas flow FL81a of the plasma gas discharged from the vicinity of the end edge of the discharge nozzle 520 is disturbed by the air flow FL82b. As a result, the plasma gas cannot be uniformly supplied to the substrate W, and the entire substrate W cannot be uniformly performed. The process of removing organic matter. That is, the gas flow FL8 lb reaching the center portion of the substrate W is different from the gas flow FL8 la reaching the end edge portion of the substrate W. Due to the different supply state of the plasma gas, the end edge portion of the substrate W The result is different from the result of the removal of organics from the central part. Therefore, in the atmosphere where the air flow exists, when the processing gas is supplied to the substrate to perform the substrate processing, there is a problem that the substrate processing cannot be performed uniformly due to the influence of the air flow. This kind of problem is not limited to substrate processing using a processing gas such as plasma gas, and also occurs when a processing liquid is supplied in an atmosphere in which an air current exists. Furthermore, the factors affecting the uniformity of substrate processing are not limited to Air flow, in the heating process of supplying heat to the substrate, also due to the condition of heat convection and heat radiation 88108.doc 200410765 = even two 'unable The substrate is uniformly heated, so the thermal convection and heat 7 ㈣ air flow also become a factor affecting the uniformity of substrate processing. Therefore = the first purpose of the invention, in providing-a way to make the entire substrate ㈣ :: Results, even in In the atmosphere where the air flow exists, the air flow is not a sentence-type substrate processing device. The purpose of the present invention is to provide a substrate processing which is not affected by thermal convection and can make the entire substrate obtain a uniform processing result. a [Summary of the invention] As mentioned above, the substrate processing processing chamber of the first invention of the scope of application for patents, and self-existence in the ~ f # discharge mechanism ', is arranged above the substrate in the self-existing "core processing chamber," for the aforementioned processing fluid; The moving mechanism is to move the aforementioned substrate along the specific: two ::; and a rectifying mechanism is provided near the aforementioned substrate, and the air current near the substrate is rectified. The private substrate board processing device of the second scope of the patent application, where: ^ its / is the same as the first scope of the patent scope of the patent application, the U soil plate is an angle substrate, and the aforementioned rectification mechanism is provided with a rectifier plate, and / ,, the edge of the corner substrate is near, and the moving direction of the center substrate is arranged substantially in parallel. The invention of the third item of Shenguang Yaowei is a substrate processing device such as the second item of the scope of patent application, and the ##, and #% ^ —months, positive "see the institution further equipped with a second rectifier plate, which is configured in Below the angled substrate. Application: The invention of the second patent patent garden is a substrate processing device such as the second patent application scope, and φ |, +, and “1 U Xi moving mechanism is arranged under the aforementioned angle substrate 10,000 ~ Xt" The mechanism is further equipped with The third rectifying plate is located at 88108.doc 200410765 1 angle = under the base plate, and is arranged at substantially the same height as the moving mechanism. The fifth invention of the Shenyin Patent Fanyuan is a substrate with a total thickness of 4 and is called the I range of the patent scope item 3. It is further described above the substrate, the meaning and f_ shape sigh group, It is set in the first 20,000 and surrounds the discharge path of the processing fluid. The invention claimed in item 6 of the scope of patent, # 々 u 士 is the soil plate processing device as in item 5 of the scope of patent application, in which the width of the aforementioned discharge plate is more than. The visibility of the cardiac vent is the same as the substrate of invention in item 7 of the aforementioned patent application park. Γ n in the scope of patent application: /, the plasma gas in the treatment flow system described above, the aforementioned gas, oxygen , Inert gas or mixed gas of these. The invention of claim 8 in the patent scope is a substrate processing device such as the scope of patent application in claim 7, in which the aforementioned first-resistant transparent member is used. ^ Is the invention of item 9 in the scope of patent application for ㈣ treatment fluids, such as #, ,, ^ is the substrate processing device in item 8 of the scope of patent application, in which the aforementioned-rectifying plate_㈣. The invention applying for the first patent of the Gongyuan Garden is a substrate processing device as described in item 7 of the patent application, wherein the second mainframe and the first mainframe are transparent members that are resistant to the aforementioned processing fluid. The invention of item 11 in the scope of patent application is known as the substrate processing device in the scope of patent application in item 10, in which the aforementioned-敕 ,, Yun '罘 a complete mud board is formed of glass. The invention of the 12th scope of the patent application is the substrate processing device of the 7th scope of the patent application, in which the distance between the top of the front two rectifier plates and the bottom of the substrate on the aforementioned transportation path is 5 (mm) or less. The feature of the substrate processing apparatus of the 13th invention is that it has 88108.doc 200410765, a prince emperor ejection mechanism, which is arranged in the aforementioned processing chamber, above the substrate in the aforementioned processing chamber, and discharges the aforementioned substrate =; and moves _ The structure is such that the aforementioned substrate is transported along a specific conveyance = = description: the aforementioned movement in a direction substantially perpendicular to the movement direction :: T is greater than the size of the aforementioned substrate I in a direction substantially perpendicular to the aforementioned movement direction, and the transport path is described The lower part is substantially locked by the aforementioned moving mechanism. The substrate processing device of the 14th invention of the patent application is characterized by: a processing chamber; a driving mechanism, which is located in the aforementioned processing chamber and holds the aforementioned substrate; An outlet mechanism, which is provided in the processing chamber, discharges the processing fluid to the substrate from above, and moves on the substrate; and a rectifier 2, which is provided in the substrate The invention relates to the substrate processing device of the 15th item of the patent application, wherein the substrate is an angular substrate, and the rectifying mechanism is arranged in the foregoing. The plate-shaped body around the corner substrate. The substrate processing device of the 16th invention in the scope of patent application is characterized by: a processing chamber; and a holding mechanism, which is located in the processing chamber and holds the substrate 'heating mechanism'. The aforementioned substrate held by the aforementioned holding mechanism is heated; and an acoustic current mechanism is provided near the aforementioned substrate and rectifies the heat flow near the aforementioned substrate. The inventions in the scope of claims 1 to 12 of the patent application, along specific The conveying path moves the substrate in the processing tank and discharges the processing fluid from the discharge mechanism to the substrate. By setting a rectifying mechanism near the substrate, it can be prevented at the edge of the substrate. 88108.doc -10- 200410765 The flow of the processing fluid is received in the processing chamber. The airflow is disturbed and disturbed. Therefore, the processing fluid at the edge of the substrate and the center of the substrate can flow uniformly. A uniform processing fluid can be used to process the substrate at the edge of the substrate and at the center of the substrate. In particular, the invention in the scope of patent application No. 2 can be used by The first rectifying plate is arranged approximately parallel to the moving direction as a rectifying mechanism, which can prevent the processing fluid discharged to the end edge portion of the angle substrate from being chaotic. Therefore, a uniform processing result can be obtained at the end edge portion and the center portion of the angle substrate. In particular, the invention in the third scope of the patent application, in addition to the first rectifying plate, the second rectifying plate is arranged below the angular substrate, and the processing can be suppressed before and after the front end of the angular substrate reaches the discharge area. The influence of the air flow in the room makes the flow of the processing fluid uniform. In addition, similarly, after the end of the corner substrate is moved outside the discharge area, the flow of the processing fluid can be made uniform without being affected by the air flow in the processing chamber. Therefore, a uniform processing result can be obtained at the front end portion, the rear end portion, and the center portion of the angular substrate. In particular, the invention in the fourth scope of the patent application has a moving mechanism disposed below the substrate, and the rectification mechanism, in addition to the first rectification plate, can be shortened by arranging a third rectification plate at substantially the same height as the moving mechanism. The distance of the third rectifier plate. Therefore, it is possible to further promote the front end of the corner substrate to move forward and backward in the discharge area by the moving mechanism, and the flow of the processing fluid before and after the end of the corner substrate moves outside the discharge area to be uniform. The central and central sections can further obtain uniform processing results. In particular, the invention in the scope of application for the fifth item of the invention, by enclosing the discharge path with a cylindrical cover body 88108.doc -11-200410765, can further promote the uniform flow of the processing fluid, and thus can further obtain a uniform substrate processing result. In particular, the invention in the sixth aspect of the patent application, because the width of the discharge port of the discharge mechanism is greater than the width of the substrate, can sufficiently discharge the processing fluid to the surface of the discharge mechanism side of the substrate, so that the substrate processing can be effectively performed. In particular, the invention of claim 7 in the scope of patent application, because inexpensive nitrogen gas or the like is used as a processing fluid for substrate processing, can reduce the operating cost of the substrate processing apparatus. In particular, the invention in the eighth aspect of the patent application, because the first rectifying plate is resistant to the processing fluid, even if the processing fluid impacts the first rectifying plate, the processing fluid does not affect the processing result of the substrate, and the substrate processing can be effectively performed. In addition, since the first rectifying plate is formed of a transparent member, the discharge condition of the processing fluid can be observed through the first rectifying plate. In particular, the invention in the ninth scope of the patent application, since the first rectifying plate is formed of glass, can effectively perform substrate processing. The discharge condition of the processing fluid can be observed through the first rectifying plate formed by the glass. In particular, the invention in the tenth aspect of the patent application, because the second rectifying plate is resistant to the processing fluid, even if the processing fluid impacts the second rectifying plate, the processing fluid does not affect the processing result of the substrate, and the substrate processing can be effectively implemented. In addition, since the second flow plate is formed of a transparent member, the discharge state of the processing fluid can be observed through the second rectifying plate. In particular, the invention claimed in claim 11 of the patent scope, since the second rectifying plate is formed of glass, can effectively perform substrate processing. The discharge condition of the processing fluid can be observed through the second rectifying plate formed by the glass. 88108.doc -12- 200410765 In particular, please invent the invention in item 12 of the patent. By making the distance between the upper surface of the second rectifying plate and the lower surface of the substrate on the aforementioned transport path less than 50 mm, the processing fluid can be further promoted. The flow is uniform. As a result, a uniform processing result on the substrate can be obtained. When the invention of claim 13 is claimed, the substrate within the processing range is moved along a specific conveying path, and when the processing fluid is discharged from the discharge mechanism to the substrate, the moving mechanism is moved in a direction substantially perpendicular to the substrate moving direction. The size is larger than the size of the substrate. By moving the mechanism to substantially lock the lower part of the conveying path, it can be prevented at the edge of the edging board. The flow of the processing fluid is affected by the air flow in the processing chamber and is not chaotic. Therefore, the processing fluid at the edge portion of the substrate and the center portion of the substrate can flow uniformly, and a uniform processing fluid for the substrate can be obtained at the edge portion of the substrate and the center portion of the substrate. For the inventions in the scope of patent application Nos. 14 and 15, when the discharge mechanism is moved, and the processing fluid is discharged from the = discharge mechanism to the substrate, a ^ mechanism is provided near the μ substrate to prevent the processing fluid from being processed at the edge of the substrate. The airflow in the room is disturbing. Therefore, the substrate edge portion and the substrate center portion can uniformly flow, and a uniform processing fluid-to-substrate treatment result can be obtained at the substrate edge portion and the substrate center portion. In particular, for the invention of the 15th patent application, since the plate-shaped body is arranged around the corner substrate as a rectifying mechanism, a uniform processing result can be obtained at the end edge portion and the center portion of the corner substrate. ^ In addition to the invention in item 16 of the Chinese patent application, due to the structure near the substrate ′, the heat flow of the wire end and the heat flow of the pure towel can be obtained in all parts of the substrate. 88108.doc -13- 200410765 [Embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. < 1 · First Embodiment > < 1 · 1 · Structure of Substrate Processing Apparatus of First Embodiment> Fig. 1 is a front view schematically showing a substrate processing apparatus 1 according to a first embodiment of the present invention. In addition, Fig. 2 is a side view schematically showing the substrate processing apparatus 1 according to the first embodiment. In addition, in order to clarify these directional relationships in Figs. 1 and subsequent drawings, it is necessary to add the XYZ orthogonal coordinate system with the Z axis direction as the vertical direction and the XY plane as the jc plane as necessary. The substrate processing device 1 of the brother A A-shaped grudge is disposed before or after cleaning the processing unit, removes the moving angle substrate w, and discharges the plasma-treated processing gas (plasma) from the discharge nozzle 20 at approximately atmospheric pressure. Gas) onto the substrate W, and the device attached to the substrate ... As shown in the figure, the substrate processing apparatus i is mainly composed of a processing chamber 10, a discharge nozzle, a conveying drum 15, a side rectifying plate 30, and a lower rectifying plate 31. The processing chamber 10 is a frame housing therein: a discharge nozzle 20, a side rectifying plate 30, a rectifying plate 31, and the like. As shown in the figure, the openings 12a and 12b are provided on the knife 4 on the surface 4 of the processing chamber 10. The substrate w is transported: It is carried into the processing chamber 10 from the opening portion 12a in the same manner as 15 ', and is moved by the transfer drum 15', and the substrate processing is performed by a plasma gas described later. Then, after the substrate processing is completed, it is carried out from the opening 12b to the processing chamber i. In this way, the moving substrate W is conveyed on the arrow gauge by the conveying roller 15 along the substantially horizontal conveying path, and substrate processing is performed by supplying plasma gas to the substrate w. 88108.doc • 14- 200410765 As shown in Figures 1 and 2, the conveying roller 15 is composed of an array of roller groups arranged in the x-axis direction, and the roller groups will be arranged in a direction perpendicular to,, 3 A group of rollers. Each drum is connected to a drive motor not shown in the figure, and it is known that an axis parallel to the γ axis rotates as a rotation axis. Therefore, the carrying roller 15 can move the substrates ... mounted thereon in a straight line in the positive or negative direction of the axis. ‘Sichuan State 16 is used to detect the substrate transported on the transport drum 5. Location < A non-contact sensor is arranged near 15g of the defection drum directly below the discharge nozzle 20. Each sensor 16a, 16b switches from the "off" state to the "on" state when the substrate W is conveyed directly above it. Therefore, the position of the substrate W under the discharge nozzle 20 can be detected by the eight on and off states of the two sensing states iga 'and igb (for example, in the direction of the arrow AR1, the substrate W Whether the front end enters the position immediately below the discharge nozzle 20, etc.). A filter unit 丨 丨 is arranged above the processing chamber 10. The filter unit 丄 i supplies the air obtained from the clean room in which the substrate processing apparatus 1 is provided to the inside of the processing chamber 10 through a filter (such as a HEPA filter ·· not shown) provided inside the filter unit 11. unit. Therefore, contaminants such as particles contained in the air are removed by passing through the filter unit 11, and the cleaned air can be supplied into the processing chamber 10. An exhaust pump 41 is connected to the bottom of the processing chamber 10 as shown in FIG. 1 through a pipe 4 5 b. Therefore, the atmosphere in the processing chamber 10 is exhausted by the exhaust pump 41 and discharged to the exhaust port 40 outside the substrate processing apparatus 1 through the pipe 45a. 88108.doc -15- 200410765 In this way, the clean air supplied from the upper part of the processing chamber 10 through the filter unit 11 is discharged to the exhaust port 40 through the exhaust pump 41 connected to the lower part of the processing chamber 10, so A clean downward air flow FL12 is formed in the atmosphere inside the processing chamber 10. As shown in FIGS. 1 and 2, the discharge nozzle 20 is located inside the processing chamber 10 and is a nozzle provided above the conveying path of the substrate W, and communicates with the pipe 25 (25 a to 25 c), the filter 23 and the valve 22. The process gas supply source 21 is connected. Therefore, by opening the valve 22, a processing gas in which the particles are removed by the filter 23 is supplied into the discharge nozzle 20. At this time, the so-called processing gas is a chemically stable gas in an environment where substrate processing is performed, and an inert gas such as nitrogen, argon, or helium is used. However, when considering the operating cost of the substrate processing apparatus 1, compared with argon and helium, it is preferable to use cheap nitrogen as the processing gas. In addition, when there is no adverse effect on the substrate W, a gas that plasma-converts air and oxygen may be discharged to the substrate W. Furthermore, two or more kinds of gases in a mixed processing gas, oxygen, and air may be used. In addition, as shown in FIG. 3, two electrodes 20a are arranged inside the discharge nozzle 20. By applying a potential difference to these two electrodes 20a, the processing gas supplied from the processing gas supply source 21 is electrically charged at approximately atmospheric pressure. Pulp. Therefore, the plasma-treated processing gas (plasma gas) is discharged downward from the discharge nozzle 20 at a substantially atmospheric pressure to form a gas flow FL11. In addition, in order that the plasma gas discharged from the discharge nozzle 20 can be sufficiently supplied to the substrate W, the nozzle width D1 of the Y-axis direction of the discharge nozzle 20 (that is, a direction orthogonal to the conveying direction of the substrate W) is designed to be larger than the substrate W The width D2 in the Y-axis direction (see FIG. 2). 88108.doc -16- 200410765 As shown in FIG. 1 and FIG. 2, the side rectifying plate 30 is two plate-shaped members, and is located directly below the discharge nozzle 20 and is arranged parallel to the traveling direction AR1 of the substrate w and clamped. The conveying path of the substrate W. Therefore, when the substrate w is conveyed by the conveying roller 15 directly below the discharge nozzle 20, the side rectifying plate 30 is located near the edge of the substrate w and is located on substantially the same plane. The lower 4i machine plate 31 is a plate-like member, as shown in Figs. 1 and 2, and is disposed below the discharge nozzle 20 and below the transfer drum 15. Therefore, when the substrate evaluation is carried by the transfer drum 15 directly below the discharge nozzle 20, the lower rectifying plate 3 system is located below the substrate W. At this time, in this embodiment, the side rectifying plate 30 and the lower rectifying plate 3 i are made of a material that is resistant to the plasma gas (such as nitrogen plasma gas) used in the substrate processing device (that is, the plasma gas). Chemically and physically stable materials) glass and quartz. Therefore, even if the plasma gas hits the side rectifying plate 30 and the lower rectifying plate 31, the removal of the organic matter adhered to the substrate% is not affected, and the organic matter removal treatment can be effectively performed. In general, since glass = quartz and other materials have high chemical and physical resistance to plasma gas of various elements, regardless of the type of processing gas used, it can be widely used as the material of the rectifier plate 30 '31. In addition, since glass, quartz, and other optically transparent members are used as materials for the rectifier plates 3G and 3m, the discharge nozzles 20 can be viewed from below through the rectifier plates 30 and 31. = In addition, use mirror material as the material of the rectifier plates 3 (), 31, and set the mirror surface upward to oppose the discharge nozzle 2G. You can use the reflection of the mirror surface to observe the inside of the discharge port under the discharge nozzle 20 from above # . In this way, an observable discharge nozzle structure is formed, and the village discharges 88108.doc -17- 200410765 from the discharge nozzle M. It can be visually confirmed that there is plasma light emission inside the discharge port, and the dirt and the like at the discharge port can be confirmed in advance. Prevents failure of processing due to non-generated plasma for some reason. In addition, for other materials whose plasma gas is chemically and physically stable, metals such as stainless steel and ceramics such as alumina may be used to form the side rectifying plate 30 and the lower rectifying plate 31. When optical transparency is not required on the rectifier plates 30 and 31, at least the surface portion of the rectifier plates 30 and 31 may be formed of a plasma-resistant gas material. Therefore, a ceramic-coated surface may be used as the rectifier. Plate 30, 3 1. In this way, when using opaque materials to observe the inside of the discharge port of the discharge nozzle 20, the rectifier plates 30, 31 are formed in an easily removable mounting structure in advance, and the rectifier plates 30, 31 can be removed when observation is needed. . In addition, as described above, the side rectifying plate 30 and the lower rectifying plate 31 of this embodiment are formed of transparent members. Thereby, an operator (hereinafter, also referred to as an "operator") of the substrate processing apparatus 1 located on the opposite side of the substrate processing apparatus 1 from the substrate processing apparatus 1 and sandwiching the side rectifying plate 30a (or the side rectifying plate 30b). ”), From the outside of the substrate processing apparatus 1, through the side rectifier plate 30a or the side rectifier plate 30b, the discharge condition of the plasma gas discharged from the discharge nozzle 20 can be observed. Therefore, it is possible for the operator to keep the plasma gas discharge condition well, and to perform the removal process of the organic matter adhering to the substrate W well. _ < 1.2. Rectification of air flow by rectifier plate > The following describes the rectification of the air flow in the processing chamber 10 by using the side rectifier plate 30 and the lower rectifier plate 31 without disturbing the plasma gas. The gas flow FL1 1 supplies a plasma gas to the substrate W. In the following description, first 88108.doc -18-200410765, (1) describes the rectification of the air flow when only the side rectifier 30 is used, and continues, (2) describes the use of the side rectifier 30 and the lower rectifier 3 1 Rectification of air flow. < 1.2.1. Rectification of air flow by the side rectifier plate> Fig. 4 shows that when the rectifier plate is provided with only the side rectifier plate 30, it reaches the vicinity of the discharge nozzle 20 directly below the front or rear end of the substrate W Top view of the substrate processing apparatus 1 at this time. In addition, FIG. 5 is a diagram illustrating a gas flow FL11 and an air flow FL12 of the plasma gas in the processing chamber 10 when the front end or the rear end of the substrate W reaches a position immediately below the discharge nozzle 20. Since the conventional substrate processing apparatus 500 (FIG. 23) is not provided to the side rectifying plate, as shown in FIG. 24, the gas flow FL8 1 a of the plasma gas discharged from the discharge nozzle 520 and supplied to the edge portion of the substrate W is shown in FIG. , Disturbed by the influence of the clean air flow FL82b supplied from the filter unit 5 11. As a result, the plasma flow FL81b and the plasma flow FL81a of the plasma gas in the central portion of the substrate W are not uniform, and the plasma gas cannot be supplied uniformly. Therefore, the processing results are different between the central portion and the edge portion of the substrate W. In the substrate processing apparatus 1 of this embodiment, since the side rectifying plate 30 is provided near the end edge portion of the substrate W, as shown in FIG. 5, the air flow FL12 b flows into the side portions of the side rectifying plate 30 away from the substrate W. Side of the side. Therefore, the gas flow FL11a of the plasma gas supplied to the edge of the substrate W is not affected by the air flow FL12b, and reaches the substrate W without being disturbed. The entire substrate W is uniformly subjected to substrate processing by the plasma gas. Therefore, since two side rectifying plates 30 are provided at the edge of the substrate W, the air flow FL12 can be rectified, and the plasma gas at the edge of the substrate W can be maintained. The gas flow FL11b in the center of W is uniform, so the entire substrate W can be uniformly processed by the plasma gas. However, as shown in FIG. 6 (a), the substrate W does not reach below the discharge nozzle 20, and when the substrate W does not exist immediately below the discharge nozzle 20, and as shown in FIG. 6 (b), the substrate W is conveyed by As a result of the movement of the drum 15, when the substrate W does not exist directly below the discharge nozzle 20, the clean air flow FL22 supplied from the filter unit 11 is divided into the side portion of the side rectifying plate 30 and flows into and away from the substrate W for transportation. The air flow FL22b of the side part of the part and the air flow 1 ^ 22 (:) flowing into the side part close to the side of the substrate transport part, and then, the air flow FL22c passes through the vicinity of the conveying roller 15 and reaches the processing chamber 10. Therefore, when there is no substrate W immediately below the discharge nozzle 20, if the plasma gas is discharged from the discharge nozzle 20, the gas of the plasma gas discharged from the edge of the discharge nozzle 20 is affected by the flow of the air flow FL22c. The flow FL2la is chaotic. In this way, the gas flow of the plasma gas discharged from the discharge nozzle 20 is different when the substrate W exists directly below the discharge nozzle 20 and the substrate W does not exist directly below the discharge nozzle 20. Therefore, only the side rectification is used. Board 30 At this time, when the substrate W reaches the vicinity immediately below the discharge nozzle 20, and when the substrate W moves away from the vicinity directly below the discharge nozzle 20 by the conveyance roller 15, the gas flow of the plasma gas supplied to the edge of the substrate W is disordered, resulting in the substrate The processing results of the W edge portion and the center portion of the substrate W are not uniform. ≪ 1.2.2. Rectification of air flow by the lower rectifier plate > At 1 o'clock, the gas flow and air flow of the plasma gas in the processing chamber 10 are compared with the previous substrate processing equipment. 88108.doc -20- 200410765 First, review the previous substrate processing equipment 500 (Figure 23). Gas flow FL83 and air flow FL84 when the lower rectifying plate is used. Figures 24 and 25 show the plasma gas flows FL81 and FL83 and air flows FL82 and FL84 in the processing chamber 510. As shown in Figure 25, the previous In the substrate processing apparatus 500, when the substrate W does not reach below the discharge nozzle 520, when the substrate W does not exist immediately below the discharge nozzle 520, and as a result of the substrate W moving by the conveyance roller 15, the vicinity of the discharge nozzle 520 does not exist. At the time of the substrate W, a part of the plasma gas discharged from the vicinity of the central portion of the discharge nozzle 520 passes through the transfer rollers Γ5 disposed below the discharge nozzle 520 and reaches the lower portion of the processing chamber 5 1 0. In addition, the self-discharge nozzle 520 The other part of the discharged plasma gas is rebounded by the conveying roller 丨 5. That is, the gas flow FL83b of the plasma gas is affected by the hardware configuration under the discharge nozzle 520. As shown in FIG. 25, since The direction of the gas flow FL83b of the plasma gas discharged near the central portion of the discharge nozzle 520 is uneven. In addition, as shown in FIG. 24, in the conventional substrate processing apparatus 500, when the substrate w is located immediately below the discharge nozzle 520, the plasma gas flow FL83b is not affected by the hardware arrangement below the discharge nozzle 52. Effect, the direction of the gas flow FL83b is substantially uniform. In this way, in the conventional substrate processing apparatus 500, the state of the gas flow FL81b when the substrate W exists immediately below the discharge nozzle 520, and the state of the gas flow FL83b when the substrate w does not exist directly below the discharge nozzle 520, and The conditions of the gas flow of the plasma gas discharged from the discharge nozzle 520 are different. Therefore, after a certain period of time has passed since the substrate W reached the vicinity immediately below the discharge nozzle 520, the gas flow supplied to the plasma gas near the center of the substrate W is in a state of chaos 88108.doc -21-200410765. The result of the removal of organic matter near the central portion of the substrate w is uneven.-Secondly, review the gas flow FL33 and air flow FL34 when the substrate processing apparatus 1 of this embodiment is provided with the lower rectifying plate 31. FIG. 26 is a top view of the substrate processing apparatus 1 when the lower rectifying plate 31 is disposed below the substrate W. FIG. In addition, FIG. 27 is a side view of the substrate processing apparatus 1 when the lower rectifying plate 31 is disposed under the discharge nozzle 20 on the substrate W. As shown in Fig. 26 (a), when the substrate W does not reach below the discharge nozzle 20, and when the substrate W does not exist immediately below the discharge nozzle 20, the lower area of the transfer drum 15 is closed by providing a lower rectifying plate 31. This makes it less susceptible to the influence of the hardware arrangement under the discharge nozzle 20. Therefore, as shown in FIG. 27, the direction of the gas flow FL33b of the plasma gas discharged from the vicinity of the central portion of the discharge nozzle 20 is uniform. That is, by providing the lower rectifying plate 31 under the substrate W, the direction of the gas flow FL33b of the plasma gas discharged from the vicinity of the central portion of the discharge nozzle 20 can be made uniform. Therefore, in the vicinity of the central portion of the substrate W, the organic matter can be effectively removed by the plasma gas. However, even if the lower rectifying plate 31 is provided below the substrate W, as shown in FIG. 27, the gas flow FL33a of the plasma gas discharged from the vicinity of the end edge of the discharge nozzle 20 is cleaned by the supply from the converter unit 11. The effect of air flow FL34b is chaotic. Therefore, the gas flow FL3 3 a of the plasma gas supplied from the end edge portion of the discharge nozzle 20 has a non-uniform gas flow direction compared with the gas flow FL33b discharged from the center portion of the discharge nozzle 20. In the following, the experimental results showing the comparison of the organic matter removal status with and without the lower rectifying plate 31 will be described. Fig. 28 shows a substrate processing device without a lower rectifier 88108.doc -22- 200410765 board 31. When the abundance of the substrate is used to remove the electropolymerized gas to remove organic matter attached to the substrate W, the measurement corresponds to the measurement on the substrate w. Figure of the contact angle of the surface of the Dot plate W. FIG. 29 is a diagram showing only the contact angle of the surface of the substrate w corresponding to a point on the substrate w when the plasma gas is discharged to the substrate in the substrate processing apparatus 1 to remove the organic gas on the substrate W. . In addition, the horizontal axis of FIG. 28 and FIG. 29 is shown on the substrate w, along the width direction (Y-axis direction) of the second substrate, from the -square end edge portion of the substrate w to the other two end edge portions, -Ϊ interval There are 54 measurement points on the ground. The vertical axis represents the contact angle on the upper surface of the shame plate W at each measurement point. In addition, the contact angle of the vertical axis has a value that can effectively remove organic matter adhering to the substrate W. As shown in Figures 28 and 29, when only the lower rectifier plate 3 is used, the average value of the contact angle of each measurement point is 26.8 (deg), which is smaller than the contact angle of each foot measurement point when the lower rectifier plate 3 is not used. The average value (= 43 · 7 (deg)). That is, as shown in Figs. 28 and 29, it is confirmed that the use of the lower rectifying plate 31 can effectively perform removal of the organic matter attached to the substrate W. In addition, when only the lower rectifying plate 31 is used, the value obtained by subtracting the smallest value from the largest of the contact angles at each measurement point (hereinafter also referred to as the “R value”) is 10.6 (deg). 3 times the contact of each measurement point The value of the standard deviation σ of the angle (hereinafter, also referred to as "3σ value") is 5.4 (deg). That is, each value of the R value and the 3σ value when only the lower rectifier plate 31 is used is smaller than the r value (= 437 (deg)) and 3 σ value (= 28 · 7 (deg)) when the lower rectification plate 31 is not used. . Therefore, it was confirmed that those who use the lower rectifying plate can uniformly discharge the plasma gas gas flow FL33b to the substrate W.
再者，如圖29所示，僅使用下部整流板31時，與基板W 88108.doc -23- 200410765 中央部附近之測定點之接觸角比較，基板w端緣部附近之 測定點之接觸角較大。因此亦確認，僅使用下部整流板3 1 ，自排出喷嘴20之端緣部排出之電漿氣體之氣體流FL33a 不均'° <1.2.3.藉由側面整流板與下部整流板進行空氣流之整流〉 圖8係除側面整流板30之外，於基板W下方配置下部整流 板31之基板處理裝置之上面圖。此外，圖9係說明基板W不 存在於排出喷嘴20正下方近旁時，處理室10内之電漿氣體 之氣體流FL31與空氣流FL32之圖。 一一二 如圖8(a)所示，基板W未到達排出喷嘴20之下方，排出噴 嘴20正下方近旁不存在基板W時，若於搬運滚筒15之下方 區域設置下部整流板3 1，則如圖9所示，搬運滾筒15之下方 區域藉由下部整流板3 1閉鎖。因而可防止如僅設置侧面整 流板30時空氣分流，空氣流入侧面整流板30侧方部中，與 基板W搬運之部分接近側之侧方部。 此外同樣地，如圖8(b)所示，基板W藉由搬運滚筒15移動 之結果，排出喷嘴20之正下方近旁不存在基板W時，亦藉 由設置下部整流板3 1，可防止空氣流流入侧面整流板30侧 方部中，與基板W搬運部分接近側之側方部。 因此，除側面整滇板30之外，藉由進一步設置下部整流 板3 1，即使排出喷嘴20正下方近旁不存在基板W，自排出 噴嘴20端緣部排出之電漿氣體之氣體流FL31 a不受空氣流 FL32之影響，而與自排出喷嘴20中央部排出之電漿氣體之 氣體流FL3 lb同樣流動。 88108.doc -24- 200410765 如以上所述，藉由設置側面整流板30與下部整流板3工， 不論基板W存在或不存在於排出噴嘴2〇之正下方近旁，均 可均一地流動。因此可對整個基板均一地供給自排出噴嘴 2 0排出之電漿氣體之氣體流，整個基板可均一地獲得處理 結果。 以下，說明設置侧面整流板30及下部整流板31時，與僅 設置下部整流板3 1時之有機物除去狀況之比較之實驗結果 。圖30係顯示僅設置下部整流板3丨時，與設置側面整流板 30及下部整板31時，對應於基板w上之測定點之基板w 表面之接觸角之圖。 另外，圖30之橫軸係表示圖28及圖29之測定點中，測定 點1〜7及測定點48〜54者，相當於基板w端緣部之測定點。 此外，縱軸與圖28及圖29同樣地，係表示各測定點之基板 W上面之接觸角。此外，圖30中之空心三角形係表示設置 側面整流板3 0及下邵整流板3 1時之測定結果，實心圓係表 示僅設置下部整流板3 1時之測定結果。 如圖30所亲，設置側面整流板30及下部整流板3丨時，各測 定點之接觸角之平均值為24.4 (deg)，R值為5.3 (deg)，3σ 值為4.4 (deg)。亦即，設置側面整流板30及下部整流板3 ! 時之各測定點之接觸角之平均值、r值及3 σ值之各個值， 均小於僅設置下部整流板3 1時之各測定點之平均值（=2 6.9 (deg))、R值（=ι〇·6 (deg))及 3 σ 值（=9.1 (deg))。 因此，與僅使用下部整流板3 1時比較，使用侧面整流板 30及下部整流板31可向基板W均一地排出自排出噴嘴2〇端 88108.doc -25- 200410765 ’彖I5附近排出之電漿氣體之氣體流FL3 1 b，於基板w端緣部 附近亦確認可有效進行有機物之除去處理。 <:ι·3·基板處理程序> 以下，說明使用本實施形態之基板處理裝置丨除去附著於 基板W上之有機物之程序。圖1〇係說明本實施形態之基板 處理用之時間圖。另外，在以下之除去處理程序中，處理 室10内持續供給經過過濾器單元U潔淨化之空氣，並藉由 排氣泵41排出處理室1〇内之氣氛。因此，於處理室1〇内持 哨开y成有潔遭化之2氣流。此外，由於搬運滾筒15之各滾 筒持續旋轉.，因此基板w在箭頭AR1方向上持續移動。 在基板W之前端部未到達排出噴嘴20正下方近旁之階段(時 刻to之前），由於感測器16a，16b均處於「斷開」狀態，且閥 門22閉鎖’因此’電漿氣體未自排出噴嘴排出。 觥續，基板W之前端部到達排出噴嘴2〇之正下方近旁， 在感測器16a自「斷開」切換成「接通」之時刻t〇，閥門22 開放，處理氣體經由配管25及過濾器23供給至排出喷嘴2〇 。此外，於時刻t0，在排出噴嘴20内之兩個電極2〇a間施加 電位差。因而供給至排出噴嘴2〇之電漿氣體予以電漿化， 並自排出噴嘴20朝向下方排出電漿氣體。而後，在基板| 4則端部藉由搬運滚筒15到達排出噴嘴2〇正下方之時刻tl ’開始進行基板處理。 而後’即使於時刻t2，基板W之前端部到達感測器16b， 感測器16b自「斷開」狀態切換成r接通」狀態，或是於時刻 t3，基板W之後端部到達感測器16a，感測器16a自「接通」 88108.doc -26- 200410765 狀態切換成「斷開」狀態，均持續進行基板處理。另外， 如前述，本實施形態之基板處理裝置1内設有側面整流板30 及下部整流板3 1，由於整個基板W可均一地供給電漿氣體 之氣體流，因此整個基板W可獲得均一之處理結果。 而後，於時刻t4，基板W之後端部自排出喷嘴20正下方離 開，進一步於感測器16b自「接通」狀態切換成「斷開」狀 態之時刻t5，閥門22閉鎖，電極20a間之電位差自V0切換成 「0」，因此電漿氣體停止自排出噴嘴20排出，除去處理結 束0 —* <1.4.第一種實施形態之基板處理裝置之優點〉 以上之第一種實施形態之基板處理裝置1中，藉由搬運滚 筒15搬運基板W，同時自排出喷嘴20向基板W排出電漿氣體 時，藉由在基板W近旁配置側面整流板30與下部整流板3 1 ，可抑制因處理室10内之空氣流之影響，造成到達基板W 端緣部之電漿氣體之氣體流混亂。因而在基板W中央部與 端緣部可保持均一之電漿氣體之氣體流，可對整個基板W 均一地供給電漿氣體，因此可在整個基板W中均一地進行 附著於基板W上之有機物之除去處理。 特別是基板W存在於排出噴嘴20之正下方時，藉由設置 侧面整流板30，可抑制電漿氣體之氣體流混亂。 此外，除側面整流板30之外，藉由設置下部整流板3 1， 於（1)基板W之前端部到達排出噴嘴20之正下方前後，及（2) 基板W後端部自排出噴嘴20之正下方遠離前後，可抑制自 排出噴嘴20排出之電漿氣體之氣體流混亂。 88108.doc -27- 200410765 <2 ·第二種實施形態> 其次，說明第二種實施形態。 圖11係模式顯示本發明第二種實施形態之基板處理裝置 100之正面圖。此外，圖12係模式顯示第二種實施形態之基 板處理裝置100之側面圖。如圖11及圖12所示，第二種實施 形態之基板處理裝置100之硬體構造與第一種實施形態比 較，如後述，除： (1) 搬運滾筒115不同， (2) 下部整板m之配置位置不同， (3) 感測器116之配至位置不同， 之外’與第一種實施形態相同。因此，以下針對該差異點 作說明。另外，以下說明中，與第一種實施形態之基板處 理裝置之構成要素相同之構成要素係註記相同符號。此等 相同符號之構成要素已於第一種實施形態中說明，因此本 實施形態省略說明。 <2.1·第二種實施形態之基板處理裝置之構造> 第二種實施形態之基板處理裝置100與第一種實施形態 之基板處理裝置1同樣地，係配置於洗淨處理單元之前或之 後，藉由移動角型基板W，並於該基板w上排出電漿氣體， 來除去附著於基板W上之有機物等污染物之裝置。 如圖11及圖12所示，本實施形態之搬運滾筒115之構造與 第一種實施形態之搬運滾筒15同樣地，係於X軸方向上配置 數個滾筒群，該滚筒群係以配置於與γ軸垂直方向上之3個 滾筒為一組。如圖12所示，設置成在滾筒群内所含之各搬 88108.doc -28- 200410765 運滾筒115之fit近插人與γ軸大致平行之滾筒旋轉轴 115a。此外’ $筒旋轉轴115a之—端與省略圖式之驅動馬 達連動連接。因此，搬運滾筒115可使其上所搭載之基板w 沿著大致水平方向之搬運路徑，在X軸之正方向或負方向上 移動。 不過，本實施形態之下部整流板131之2軸方向之位置， 係配置在滾筒旋轉軸115a與搬運滾筒115上端位置之間，因 此，搬運滾筒115之滾筒半徑至少設計成大於下部整流板 131之厚度。 另外，本實施形態之下部整流板131與第一種實施形態之 下部整流板31同樣地，係藉由對電漿氣體化學性穩定之玻 璃及石英等透明構件而形成，不過亦可藉由不銹鋼等金屬 及氧化鋁等陶瓷來形成。 本實施形態之下部整流板131與第一種實施形態之下部 整流板3 1同樣地’係配置於基板w下方之板狀構件。不過 本貫施形態之下邵整流板13 1係配置於搬運滾筒1丨5之滾筒 部分，因此如圖12所示，在下部整流板U1與搬運滾筒U5 之各滾筒干擾之部分設有數個孔部13 lh。而後***分別對 應於數個孔部13 1 h之滾筒，來配置下部整流板丨3 1。 如此，本實施形態與第一種實施形態比較，可進一步縮 小下邵整流板之上面與基板W之下面之距離。因此可進一 步抑制電漿氣體之氣體流FL41 a混亂。另外，下部整流板13 1 之上面與基板W之下面之距離宜為5.0mm以下。 另外，就使用基板處理裝置100，除去附著於基板W之有 88108.doc -29- 200410765 機物之基板處理，除使用設於下部整流板131上之感測器 116來檢測基板w之位置之外，與第一種實施形態中說明之 處理程序相同，因此此處省略說明。 以下’过明顯示改變基板處理裝置下面與下部整流板上 面炙距離時之有機物除去狀況之比較的實驗結果。圖3 1係 _ π设置側面整流板3〇及下部整流板3丨時，對應於基板w 上之測定點之基板W表面之接觸角之圖。 另外，圖31之橫軸表示於基板w之上面，沿著基板w之寬 度方向（Y軸逢向），自基板w之一方端緣部向另一方端緣部_ ，以等間隔舰置11點之測定點。此外，縱軸表示各測定點— 之基板W上面之接觸角。再者，圖31中之實心三角係表示 基板w之下面與下部整流板之上面之距離為5〇 mm時之測 定結果，圖31之實心菱形係表示基板w之下面與下部整流 板之上面之距離為100 〇 mm時之測定結果。 如圖31所示，基板W之下面與下部整流板13丨之上面之距 離（以下亦稱「基板一整流板間距離DD」）為5 ·〇 mm時，各測 定點之接觸角之平均值為26.8 (deg)、R值為8,7(deg)、3σ · 值為8.0 (deg)。亦即，基板一整流板間距離〇〇為5() ‘ 之各測定點之接觸角之平均值、r值及3 σ值之各個值，均小 於基板一整流板間释離DD為1 〇〇· 〇 mm時之各測定點之平 均值（=32.6 (deg)、R值（=17.1 (deg))及 3σ 值（=19.〇 (deg))。 因此，與基板一整流板間距離DD為100.0 mm時比較，基 板一整流板間距離DD為5 _ 0 mm時（亦即，藉由縮小基板一整 流板間距離DD)，可向基板W均一地排出自排出嗜嘴2〇排出 88108.doc -30- 200410765 之電漿氣體之氣體流FL41 (FL41a，FL41b)，並確認即使在 基板W之端緣部附近仍可有效進行有機物之除去處理。 <2.2.第二種實施形態之基板處理裝置之優點> 以上之第二種實施形態之基板處理裝置1 00中，搬運滚筒 11 5藉由使滾筒之半徑至少大於下部整流板13 1之厚度，此 外下部整流板1 3 1在與搬運滾筒11 5之滚筒干擾之部分設置 數個孔部13 1 h，藉由***對應於該孔部之滾筒，與第一種 實施形態比較，可縮小基板W與下部整流板13 1之距離。因 而與第一種實施形態比較，可進一步抑制因處理室10内之 空氣流FL42之影響，造成到達基板W端緣部之電漿氣體之 氣體流FL41 a混亂，因此可進一步保持基板W中央部之電漿 氣體之氣體流FL4lb與端緣部之電漿氣體之氣體流FL4la均 一，整個基板W中可均一地進行附著於基板W上之有機物之 除去處理。 <3.第三種實施形態〉 其次，說明第三種實施形態。 圖13係模式顯示本發明第三種實施形態之基板處理裝置 200之正面圖。此外，圖14係模式顯示第三種實施形態之基 板處理裝置200之侧面圖。如圖13及圖14所示，第三種實施 形態之基板處理裝置200之硬體構造與第一種實施形態比 較，如後述，除：（1)進一步設置覆蓋排出喷嘴20之護蓋250 (參照圖13及圖14)之外，與第一種實施形態相同。因此，以 下針對該差異點作說明。另外，以下說明中，與第一種實 施形態之基板處理裝置之構成要素相同之構成要素係註記 88108.doc -31 - 200410765 相同符號。此等相同符號之構成要素已於第一種實施形態 中說明，因此本實施形態省略說明。 <3.1.第三種實施形態之基板處理裝置之構造〉 第三種實施形態之基板處理裝置200與第一種實施形態 之基板處理裝置1及第二種實施形態之基板處理裝置100同 樣地，係配置於洗淨處理單元之前或之後，藉由沿著大致 水平方向之搬運路徑移動角型基板W，於該基板W上排出電 漿氣體，來除去附著於基板W上之有機物等污染物之裝置。 護蓋250係在其下部具有開口部252之筒狀護蓋。如圖13 及圖14所示，護蓋250配置於處理室10内，來覆蓋排出喷嘴 20與自排出噴嘴20排出之電漿氣體之氣體流FL51之流路。 因此，氣體流FL51不受處理室10内之空氣流FL52之影響， 可於基板W上供給電漿氣體。 此外，於護蓋250下部之基板W近旁，沿著基板W行進方 向AR1之前後設有平坦之凸緣部251。因此自排出喷嘴20排 出並經過開口部252之電漿，導入被凸緣部251與基板W夾 著的空間内；可對基板W有效供給電漿氣體。 另外，使用基板處理裝置200除去附著於基板W上之有機 物之基板處理，與第一種實施形態中說明之處理程序相同 ，因此，此處省略說明。 <3.2.第三種實施形態之基板處理裝置之優點〉 以上之第三種實施形態之基板處理裝置200中，藉由護蓋 250覆蓋排出喷嘴20及自排出喷嘴20排出之電漿氣體之氣 體流FL51之流路，可不受處理室10内之空氣流FL52之影響 -32- 88108.doc 200410765 ，供給電漿氣體至基板w。因此與第一種實施形態之基板 處理裝置比較，可進一步對基板w均一地供給電漿氣體， 可在整個基板W上均一地進行附著於基板W上之有機物之 除去處理。 <4.第四種實施形態> 繼續，說明第四種實施形態。圖15係模式顯示本發明第 四種實施形態之基板處理裝置600之正面圖。此外，圖16係 模式顯示第四種實施形態之基板處理裝置600之侧面圖。第 四種實施形態之基板處理裝置600與第一種實施形態比較 一 ，如後述，除：不使用侧面整流板30及下部整流板3 1，而 藉由使用搬運滚筒615，將處理室10内之空氣流與電漿氣體 之氣體流予以整流之外，與第一種實施形態相同。因此， 以下針對該差異點作說明。 另外，以下說明中，與第一種實施形態之基板處理裝置 之構成要素相同之構成要素係註記相同符號。此等相同符 號之構成要素已於第一種實施形態中說明，因此本實施形 態省略說明。 <4·1·第四種實施形態之基板處理裝置之構造〉 第四種實施形態之基板處理裝置600與第一種實施形態 之基板處理裝置1 '第二種實施形態之基板處理裝置100及 第三種實施形態之基板處理裝置200同樣地，係配置於洗淨 處理單元之前或之後，藉由沿著大致水平方向之搬運路徑 移動角型基板W，於該基板W上排出電漿氣體，來除去附著 於基板W上之有機物等污染物之裝置。 -33- 88108.doc 200410765 如圖15及圖16所示，搬運滾筒615係延伸於Y軸方向之圓 柱狀滾筒，並在X軸方向上配置數個而構成。如圖丨6所示， 各搬運滾筒615設置成在其中心附近***與γ軸大致平行之 滾筒旋轉軸615a。此外，滾筒旋轉軸61九之一端與省略圖 式之驅動馬達連動連接。因此搬運滾筒615可使其上所搭載 之基板W在X軸之正方向或負方向上直線地移動。 如圖16所示，搬運滾筒615之γ軸方向之長度大於基板w 之γ軸万向之長度，構成搬運滾筒615之端部615b自基板w 兩端哭出。么此，藉由搬運滾筒615兩端之突出部分之端部 615b，自過·攄器單元n供給之潔淨之空氣流FL92b自端部 615b流至外侧。因此供給至基板w端緣部之氣體流孔…不 文2氣流FL92b<影響，不受干擾地到達基板评，整個基板 W中可藉由電漿氣體均一地進行基板處理。 此外，搬運滾筒615中之配置於處理室1〇内者，如圖15 所示，係以不與相鄰之搬運滾筒615干擾之程度接近而配置 :亦即，配置於處理室10内之各搬運滾筒615與相鄰之搬運 滾筒615之中心'間距離，係設定成若干大於搬運滾筒…之 直徑。 个一办1 %叫貝”角ζυ之下方 域藉由搬運滾筒615大致閉鎖。因而，即使排出噴嘴版 下方近旁不存在基板_，仍與第一種實施形態之下部 流板31同樣地，自排出喷嘴20之料部#出之電裝氣體 氣體流？191不受空氣流孔921)之影響。因此，自排22 20之端緣部排出之電漿氣體之氣體流&91與自^ ^ 88108.doc -34- 200410765 之中央邵排出之電漿氣體之氣體流FL9 1同樣的流動。 另外’使用基板處理裝置6〇〇除去附著於基板W上之有機 物之基板處理’與第一種實施形態中說明之處理程序相同 ，因此，此處省略說明。 <4·2·第四種實施形態之基板處理裝置之優點> 以上之第四種實施形態之基板處理裝置600中，（1)係構成 搬運滾筒615之Υ軸方向之長度大於基板界之¥軸方向之長 度’搬運滚筒615之端部615b自基板W兩端突出。此外，（2) 在X轴方向^置數個搬運滾筒615，並設置成各相鄰之搬運 滾筒615彼此不干擾之程度接近。藉此，數個搬運滾筒615 對基板W發揮第一種實施形態之側面整流板3〇及下部整流 板31相同之作用。因而與第一種實施形態同樣地，在基板 W4中央部與端緣部保持電漿氣體之氣體流fL9丨均一，可 在整個基板W上均一地供給電漿氣體，因此可在整個基板w 上均一地進行附著於基板w上之有機物之除去處理。 <5·第五種實施形態> 以下，說明第五種實施形態。第五種實施形態之基板處 理裝置與第一至第四種實施形態之基板處理裝置同樣地， 係配置於洗淨處理單元之前或之後，藉由移動角型基板w ，於該基板\¥上排出電漿氣體，來除去附著於基板w上之有 機物等污染物之裝置。不過第五種實施形態之基板處理裝 置與第一至第三種實施形態之基板處理裝置不同，係將基 板W保持毛基板保持部3 6 0上，藉由移動排出喷嘴3 2 q，並供 給電漿氣體於基板W上來實施除去處理（參照圖17、圖18)。 88108.doc -35- 200410765 以下，針對該差異點作說明。另外，圖17及圖18中，與 第一種實施形態之基板處理裝置之構成要素相同之構成要 素係註記相同符號。此等相同符號之構成要素已於第一種 實施形態中說明，因此本實施形態省略說明。 <5.1.第五種實施形態之基板處理裝置之構造> 圖17係模式顯示本發明第五種實施形態之基板處理裝置 300之正面圖。此外，圖18係模式顯示第五種實施形態之基 板處理裝置300之上面圖。 如圖π所5，基板處理裝置300主要係由··處理室3iq、 基板保持部3·60、排出噴嘴320及整流板33〇構成。 處理室310係於其内部收容排出噴嘴32〇及整流板3川等 之框體。如圖17所示，在與處理室31〇之又軸正交之側面中 之一方設有開口部312。基板W藉由搬運單元38〇自開口部 312搬入處理室310内部，實施後述之藉由電漿氣體之基板 處理。而後，於基板處理結束後，基板料度藉由搬運單 元380搬出處理室31〇外部。 此外，於處理室310上部配置有過滤器單元"，於處理室 310下部經由配管45b連通連接有排氣泵41。因此，自處理 室31〇上部經由過遽器單元⑽給至下方之潔淨空氣，係藉 由連接於處理室3ΐα下部之排氣泵41排出排氣口 4〇，而於處 理▲ 3 1 〇内邵形成潔淨之空氣流。 基板保持部360係以大致水平姿勢吸引保持基板料。如 _示，基板保持部360之下部固定於，筒⑹之移動部 36k頂端部。因此基板保持部36〇藉由唧筒上昇至與開 88108.doc -36 - 200410765 P312大致同向，可在與搬運單元之間進行基板w之 、、, 、-. 运X。 排出噴嘴320與第-種實施形態之排出喷嘴2〇同樣地，係 朝向基板W排出電漿氣體，並安裝於嘴嘴臂37〇之下部。如 圖Π及圖18所不’排出噴嘴32〇經由配管25、闕門、過滤 器23、設於臂驅動部371内之配管（省略圖式）及設於噴嘴臂 370内之配管（省略圖式）而與處理氣體供給源21連通連接。 因此’藉由開放閥門22,供給藉由過遽器23除去微粒子之 處理氣體至#出噴嘴3 2 〇。 -此外，排出噴嘴320内，與第一種實施形態之排出噴嘴20 同k地’於其内邵配置有兩片電極（參照圖3)。藉由於此等 兩片包極上賦予電位差，將自處理氣體供給源^供給之處 理氣體予以電漿化。 如圖17及圖18所示，導軌375配置於與設有開口部犯之 處理室3 10側面相反側之側面之内側近旁。此外，噴嘴臂p 〇 :設置成藉由臂驅動部371 ’可沿著導軌”5在大致水平之 田万向AR2及其相反方向上移動。因此，如圖所示， 排出噴嘴320自排出噴嘴32〇之位置γ〇通過基板以上至位置 γι ’可沿著掃描方向AR2，或在與掃描方向ar2之相反方 向上直線狀地平行移動’可藉由來回移動（來回掃描），在整 個基板W上供給經電漿化之處理氣體（電漿氣體卜 正 整流板330係配置於基板评周圍之板狀構件（框體），相+ 於第-種實施形態之側面整流板3G。再者，如前所述^ 實施形㈣將基㈣保持於練保㈣⑽上，移動排出喷 88l〇8.(j〇c -37- 200410765 嘴320，並於基板W上供給電漿氣體。因此，在供給電漿氣 體時，基板W始終存在於整流板330内側，於整流板330内 侧不流入空氣流FL62。因此，本實施形態無須設置相當於 第一種實施形態之下部整流板3 1之整流板，僅藉由將相當 於側面整流板30之整流板330設置成包圍基板W四邊而與 基板W大致同高，即可不受空氣流FL62之影響，而供給均 一之電漿氣體之氣體流FL61(參照圖19)。 <5.2.基板處理程序> 以下，說明使用本實施形態之基板處理裝置300，除去附 著於基板W上之有機物之處理程序。另外，在以下之除去 處理程序中，於處理室310内持續供給藉由過漉器單元11潔 淨化之空氣，並藉由排氣泵41排出處理室310内之氣氛。因 此於處理室3 10内持續形成有經潔淨化之空氣流FL62。 除去處理程序中，首先，藉由將排出喷嘴320自基板W上 移動至退出位置Y0，來退出排出喷嘴320。其次，藉由唧筒 3 62使基板保持部360上昇，自搬運單元380取得基板W。繼 續，降低基板保持部360，使基板W與整流板3 30大致同高。 繼續，沿著導軌375，藉由在掃描方向AR2上移動臂驅動 部371，使排出喷嘴320自掃描位置Y0經過基板W上而移動 至掃描位置Y卜此外，於排出噴嘴320開始移動之同時開放 閥門22，於排出喷嘴320内之電極上施加電位差。因此，自 處理氣體供給源21供給至排出噴嘴320之處理氣體藉由該 電極而電漿化。而後，經電漿化之處理氣體（電漿氣體）向排 出噴嘴320之下方排出。如此，藉由自排出喷嘴320排出電 88108.doc -38- 200410765 漿氣體於基板W上，同時自掃描位置Y0移動至Y1，可進行 附著於基板W上之有機物之除去處理。 而後，當排出噴嘴320到達掃描位置Y1時，停止臂驅動部 371，並停止排出噴嘴320之移動。此外，在排出噴嘴320停 止之同時，排出噴嘴320内之電極之電位差為「零」，藉由 閉鎖閥門22，電漿氣體停止排出，除去處理結束。 <5.3.第五種實施形態之基板處理裝置之優點〉 以上之第五種實施形態之基板處理裝置300中，將基板W 保持於基板保持部360上，移動排出噴嘴320，同時自排出 噴嘴320供給·電漿氣體至基板W上，來進行基板W上之有機 物除去處理時，藉由在基板W周圍設置整流板330，可抑制 因處理室10内之空氣流FL62之影響，造成到達基板W端緣 部之電漿氣體之氣體流FL61混亂。因此可在基板W之中央 部與端緣部均一地供給電漿氣體，可在整個基板W上均一 地進行除去處理。 另外，第五種實施形態之變形例，亦可構成使吸著基板 W之基板保持部360移動來相對移動。 <6.第六種實施形態> 圖20係模式顯示本發明第六種實施形態之基板處理裝置 400之正面圖。此外，圖21係模式顯示第六種實施形態之基 板處理裝置400之上面圖。 如圖20所示，基板處理裝置400主要係由：處理室410、 加熱單元485及整流板430構成。 處理室410係於其内部收容加熱單元485及整流板430等 88108.doc -39- 200410765 之框體。如圖20所示，在與處理室41〇之又轴正交之側面中 之一方設有開口部412。基板w藉由搬運單元48〇,經由開 :部412而搬入處理室410内部，並藉由後述之加熱單元^ 實施加熱處理。而後，在加熱處理結束時，基板w再度藉 由搬運單元480搬出處理室410外部。 如圖20及圖21所示，加熱單元485係藉由立設於其上面之 數個支撐部481，在點接觸狀態下自下方支撐基板％，來進 行熱處理之單元。 支撐部481#由以下兩種構成：在大致水平狀態下支撐基 板W用之固定支撐邵481b，與使基板w升降用之移動支撐部 481a。因此，藉由使移動支撐部481a上昇，使移動支撐部 481a之上端與開口邵412大致同高，可在與搬運單元48〇之 間進行基板W之送交（參照圖20(a))。此外，於送交基板w完 成，藉由使移動支撐部481a下降，並藉由固定支撐部481b 支撐基板W，可使基板w與整流板430大致同高（參照圖 20(b))。 整流板43 0'係設置成與藉由支撐部481所支撐之基板界大 致同高，而包圍基板W周圍之板狀構件（框體），使用於將自加 熱單元4 8 5放射之熱，及藉由加熱單元4 8 5產生之熱對流（以 下將熱放射及熱對濠統稱為「熱流」）予以整流。 圖22係於基板W周圍設置整流板430時之熱流之說明圖 。如圖22(a)所示，不設置整流板430時，自加熱單元485到 達基板W端緣部近旁之熱流几71&，因上方不存在遮蔽物， 導致熱流FL7 la之一部分擴散至上方。另外，自加熱單元485 88108.doc -40- 200410765 到達基板W中央部之熱流FL7 lb，由於幾乎可將全部之熱能 傳導至基板W上，因此可有效加熱基板W。因而基板W之端 緣部與中央部之加熱狀況不同。 因此，本實施形態如圖22(b)所示，係於基板W周圍設置 整流板430。藉由設置整流板430，到達基板W端緣部近旁 之熱流FL72a不擴散至上方，而可將熱傳導至基板W及整流 板430。因而可保持基板W端緣部之熱流FL72a與中央部之 熱流FL72b均一，可將整個基板W均一地加熱。Furthermore, as shown in FIG. 29, when only the lower rectifying plate 31 is used, the contact angle of the measurement point near the center edge portion of the substrate w is compared with the contact angle of the measurement point near the center portion of the substrate W 88108.doc -23-200410765. Larger. Therefore, it was also confirmed that the gas flow FL33a of the plasma gas discharged from the end edge portion of the discharge nozzle 20 using only the lower rectifying plate 3 1 is not uniform. ° < 1.2.3. Air is passed through the side rectifying plate and the lower rectifying plate Flow rectification> FIG. 8 is a top view of a substrate processing apparatus in which a lower rectification plate 31 is disposed below a substrate W except for a side rectification plate 30. In addition, FIG. 9 is a diagram illustrating a gas flow FL31 and an air flow FL32 of the plasma gas in the processing chamber 10 when the substrate W does not exist immediately below the discharge nozzle 20. As shown in FIG. 8 (a), when the substrate W does not reach below the discharge nozzle 20 and there is no substrate W immediately below the discharge nozzle 20, if a lower fairing plate 31 is provided in the area below the transfer drum 15, As shown in FIG. 9, the lower area of the transfer drum 15 is closed by the lower rectifying plate 31. Therefore, if only the side rectifying plate 30 is provided, the air is shunted, and the air flows into the side portions of the side rectifying plate 30 side portions that are close to the portion where the substrate W is conveyed. In addition, similarly, as shown in FIG. 8 (b), when the substrate W is moved by the conveyance roller 15, when there is no substrate W immediately below the discharge nozzle 20, the lower rectifying plate 31 is also provided to prevent air. The flow flows into the lateral portion of the side rectifying plate 30 and the lateral portion on the side closer to the substrate W conveying portion. Therefore, in addition to the side rectifying plate 30, by further providing a lower rectifying plate 31, even if there is no substrate W immediately below the discharge nozzle 20, the gas flow FL31 a of the plasma gas discharged from the edge of the discharge nozzle 20 It is not affected by the air flow FL32 and flows in the same manner as the gas flow FL3 lb of the plasma gas discharged from the central portion of the discharge nozzle 20. 88108.doc -24- 200410765 As described above, by providing the side rectifying plate 30 and the lower rectifying plate 3, the substrate W can flow uniformly regardless of the presence or absence of the substrate W directly below the discharge nozzle 20. Therefore, the gas flow of the plasma gas discharged from the discharge nozzle 20 can be uniformly supplied to the entire substrate, and the processing result can be uniformly obtained throughout the substrate. In the following, the experimental results of the comparison of the organic matter removal conditions when the side rectifying plate 30 and the lower rectifying plate 31 are provided and when only the lower rectifying plate 31 is provided will be described. FIG. 30 is a diagram showing the contact angle of the surface of the substrate w corresponding to the measurement point on the substrate w when only the lower rectifier plate 3 is provided and when the side rectifier plate 30 and the lower entire plate 31 are provided. The horizontal axis in FIG. 30 indicates that among the measurement points in FIGS. 28 and 29, the measurement points 1 to 7 and the measurement points 48 to 54 correspond to the measurement points at the edge of the substrate w. The vertical axis indicates the contact angle on the upper surface of the substrate W at each measurement point in the same manner as in Figs. 28 and 29. In addition, the hollow triangles in FIG. 30 indicate the measurement results when the side rectifying plate 30 and the lower Shao rectifying plate 31 are installed, and the solid circle indicates the measurement results when only the lower rectifying plate 31 is provided. As shown in Figure 30, when the side rectifying plate 30 and the lower rectifying plate 3 丨 are set, the average value of the contact angle of each measurement point is 24.4 (deg), the R value is 5.3 (deg), and the 3σ value is 4.4 (deg). That is, the average values of the contact angles, the r values, and the 3 σ values of the respective measurement points when the side rectifying plate 30 and the lower rectifying plate 3! Are provided are smaller than the respective measuring points when only the lower rectifying plate 31 is provided. The average value (= 2 6.9 (deg)), R value (= ι〇 · 6 (deg)), and 3 σ value (= 9.1 (deg)). Therefore, compared with the case where only the lower rectifying plate 31 is used, the side rectifying plate 30 and the lower rectifying plate 31 can uniformly discharge the self-discharge nozzle 20 to the substrate W. 88108.doc -25- 200410765 '彖 I5 The gas flow FL3 1 b of the slurry gas was also confirmed to be capable of effectively removing organic matter near the edge of the substrate w. <: 3. Substrate processing program > The following describes a procedure for removing organic matter adhering to the substrate W using the substrate processing apparatus of this embodiment. Fig. 10 is a timing chart for explaining substrate processing in this embodiment. In the following removal process, the cleaned air passing through the filter unit U is continuously supplied in the processing chamber 10, and the atmosphere in the processing chamber 10 is exhausted by the exhaust pump 41. Therefore, hold the whistle in the processing chamber 10 to form a cleaned air stream. In addition, since the rollers of the conveyance roller 15 are continuously rotated, the substrate w is continuously moved in the direction of the arrow AR1. At the stage where the front end of the substrate W does not reach directly below the discharge nozzle 20 (before time to), because the sensors 16a and 16b are in the "off" state, and the valve 22 is locked, therefore, the plasma gas is not self-discharged The nozzle is ejected. Continuing, the front end of the substrate W reaches directly below the discharge nozzle 20, and at the time t0 when the sensor 16a is switched from "OFF" to "ON", the valve 22 is opened, and the processing gas passes through the pipe 25 and filtering The device 23 is supplied to the discharge nozzle 20. At time t0, a potential difference is applied between the two electrodes 20a in the discharge nozzle 20. Therefore, the plasma gas supplied to the discharge nozzle 20 is plasmatized, and the plasma gas is discharged downward from the discharge nozzle 20. Then, the substrate processing is started at the time t1 'at which the end of the substrate | 4 reaches the position directly below the discharge nozzle 20 by the conveyance roller 15. Then 'even at time t2, the front end of the substrate W reaches the sensor 16b, and the sensor 16b switches from the "off" state to the r on state, or at time t3, the end of the substrate W reaches the sensing The device 16a and the sensor 16a are switched from the “on” 88108.doc -26- 200410765 state to the “off” state, and the substrate processing is continuously performed. In addition, as described above, the substrate processing apparatus 1 of this embodiment is provided with a side rectifying plate 30 and a lower rectifying plate 31. Since the entire substrate W can uniformly supply the gas flow of plasma gas, the entire substrate W can obtain a uniform flow. process result. Then, at time t4, the rear end of the substrate W leaves from directly below the discharge nozzle 20, and at time t5 when the sensor 16b switches from the "on" state to the "off" state, the valve 22 is locked, and between the electrodes 20a The potential difference is switched from V0 to "0", so the plasma gas ceases to be discharged from the discharge nozzle 20, and the removal process is completed. 0— * < 1.4. Advantages of the substrate processing apparatus of the first embodiment> The first embodiment described above In the substrate processing apparatus 1, when the substrate W is conveyed by the conveyance roller 15 and the plasma gas is discharged from the discharge nozzle 20 to the substrate W, the side rectifier plate 30 and the lower rectifier plate 3 1 are arranged near the substrate W, and the cause can be suppressed. The influence of the air flow in the processing chamber 10 causes the gas flow of the plasma gas reaching the edge of the substrate W to be disturbed. Therefore, a uniform plasma gas flow can be maintained at the central portion and the edge portion of the substrate W, and the plasma gas can be uniformly supplied to the entire substrate W. Therefore, the organic matter adhered to the substrate W can be uniformly distributed throughout the substrate W. Its removal processing. In particular, when the substrate W is located directly below the discharge nozzle 20, the side flow rectifying plate 30 is provided to suppress the gas flow disorder of the plasma gas. In addition, in addition to the side rectifying plate 30, the lower rectifying plate 31 is provided, before (1) the front end of the substrate W reaches directly below the discharge nozzle 20, and (2) the rear end of the substrate W from the discharge nozzle 20 Just below and away from the front and back, it can suppress the gas flow disorder of the plasma gas discharged from the discharge nozzle 20. 88108.doc -27- 200410765 < 2. Second Embodiment > Next, a second embodiment will be described. Fig. 11 is a front view schematically showing a substrate processing apparatus 100 according to a second embodiment of the present invention. In addition, Fig. 12 is a schematic side view showing a substrate processing apparatus 100 according to the second embodiment. As shown in FIG. 11 and FIG. 12, the hardware structure of the substrate processing apparatus 100 of the second embodiment is compared with the first embodiment, as described later, except that (1) the transport roller 115 is different, and (2) the entire lower plate The arrangement position of m is different, and (3) the placement position of the sensor 116 is different, except that the sensor 116 is the same as the first embodiment. Therefore, the differences will be described below. In the following description, the same components as those of the substrate processing apparatus of the first embodiment are denoted by the same reference numerals. The constituent elements having the same symbols have already been described in the first embodiment, so the description of this embodiment is omitted. < 2.1 · Structure of the substrate processing apparatus of the second embodiment > The substrate processing apparatus 100 of the second embodiment is the same as the substrate processing apparatus 1 of the first embodiment, and is disposed before the cleaning processing unit or After that, the angular-shaped substrate W is moved, and plasma gas is discharged on the substrate w to remove an organic substance attached to the substrate W and other pollutants. As shown in FIGS. 11 and 12, the structure of the conveyance roller 115 in this embodiment is the same as that of the conveyance roller 15 in the first embodiment, and a plurality of roller groups are arranged in the X-axis direction. Three rollers in a direction perpendicular to the γ axis are a group. As shown in FIG. 12, each of the rollers included in the roller group is arranged to fit a roller rotation axis 115 a that is approximately parallel to the γ axis. In addition, the one end of the barrel rotating shaft 115a is connected to the driving motor which is omitted in the drawing. Therefore, the conveyance roller 115 can move the substrate w mounted thereon along the conveyance path in the substantially horizontal direction in the positive or negative direction of the X axis. However, the position in the two-axis direction of the lower rectifying plate 131 in this embodiment is arranged between the drum rotation shaft 115a and the upper end position of the conveying roller 115. Therefore, the roller radius of the conveying roller 115 is at least designed to be larger than that of the lower rectifying plate 131. thickness. In addition, the lower rectifying plate 131 of this embodiment is formed by a transparent member such as glass and quartz that is chemically stable to the plasma gas, similarly to the lower rectifying plate 31 of the first embodiment, but it may also be made of stainless steel. And other metals and ceramics such as alumina. The lower rectifying plate 131 of this embodiment is a plate-like member disposed below the substrate w in the same manner as the lower rectifying plate 31 of the first embodiment. However, in the present embodiment, the Shao rectifier plate 13 1 is arranged on the roller portion of the transfer roller 1 丨 5. Therefore, as shown in FIG. 12, several holes are provided in the portion where the lower rectifier plate U1 and the transfer roller U5 interfere with each other. Department 13 lh. Then insert the rollers corresponding to the holes 13 1 h respectively to configure the lower rectifying plate 31. In this way, compared with the first embodiment, this embodiment can further reduce the distance between the upper surface of the lower rectifier plate and the lower surface of the substrate W. Therefore, it is possible to further suppress the disorder of the gas flow FL41 a of the plasma gas. The distance between the upper surface of the lower rectifying plate 13 1 and the lower surface of the substrate W is preferably 5.0 mm or less. In addition, the substrate processing apparatus 100 is used to remove the substrate processing of 88108.doc -29- 200410765 attached to the substrate W, and the sensor 116 provided on the lower rectifying plate 131 is used to detect the position of the substrate w. The processing procedure is the same as that described in the first embodiment, so the description is omitted here. The following 'explains clearly the experimental results of comparison of the organic matter removal conditions when the distance between the lower surface of the substrate processing apparatus and the upper surface of the lower rectifying plate is changed. FIG. 31 is a diagram of the contact angle of the surface of the substrate W corresponding to the measurement point on the substrate w when the side rectifier plate 30 and the lower rectifier plate 3 丨 are provided at _ π. In addition, the horizontal axis of FIG. 31 is shown on the substrate w, along the width direction of the substrate w (the Y-axis is facing), from one end edge portion to the other end edge portion _ of the substrate w. Point of measurement. The vertical axis indicates the contact angle on the substrate W at each measurement point. Furthermore, the solid triangle system in FIG. 31 indicates the measurement result when the distance between the lower surface of the substrate w and the upper surface of the lower rectifying plate is 50 mm, and the solid diamond system in FIG. 31 indicates the lower surface of the substrate w and the upper surface of the lower rectifying plate. Measurement results at a distance of 100 mm. As shown in FIG. 31, when the distance between the lower surface of the substrate W and the upper surface of the lower rectifying plate 13 丨 (hereinafter also referred to as "the distance between the substrate and the rectifying plate DD") is 5.0 mm, the average value of the contact angles at each measurement point The value is 26.8 (deg), the value of R is 8, 7 (deg), and the value of 3σ is 8.0 (deg). That is, the distance between the substrate and the rectifying plate 〇 is the average value of the contact angle of each measurement point of 5 () ′, and the values of r and 3 σ are all smaller than the release DD between the substrate and the rectifying plate is 1 〇 The average value of each measurement point (= 32.6 (deg), R value (= 17.1 (deg)), and 3σ value (= 19.〇 (deg)) at 〇mm). Therefore, the distance from the substrate to the rectifier plate Comparing when DD is 100.0 mm, when the distance between the substrate and the rectifying plate is DD_5 mm (that is, by reducing the distance DD between the substrate and the rectifying plate), the substrate W can be uniformly discharged. 88108.doc -30- 200410765 Plasma gas flow FL41 (FL41a, FL41b), and it was confirmed that the removal of organic matter can be effectively performed even near the edge of the substrate W. < 2.2. Second Embodiment Advantages of the substrate processing apparatus> In the substrate processing apparatus 100 of the second embodiment described above, the roller 11 is transported by making the radius of the roller at least larger than the thickness of the lower fairing plate 13 1 and the lower fairing plate 1 3 1 A plurality of hole portions 13 1 h are provided in a portion that interferes with the roller of the transport roller 115, and is inserted corresponding to Compared with the first embodiment, the roller of the hole can reduce the distance between the substrate W and the lower rectifying plate 131. Therefore, compared with the first embodiment, the influence of the air flow FL42 in the processing chamber 10 can be further suppressed. Causes the gas flow FL41 a of the plasma gas reaching the edge of the substrate W to be chaotic, so that the gas flow FL4lb of the plasma gas at the central portion of the substrate W and the gas flow FL4la of the plasma gas at the edge can be further maintained uniformly, and the entire substrate The removal process of the organic matter adhering to the substrate W can be performed uniformly in W. < 3. Third Embodiment> Next, a third embodiment will be described. Fig. 13 is a pattern showing a substrate according to a third embodiment of the present invention. A front view of the processing apparatus 200. In addition, FIG. 14 is a side view showing a substrate processing apparatus 200 of the third embodiment mode. As shown in FIGS. 13 and 14, the hardware of the substrate processing apparatus 200 of the third embodiment Compared with the first embodiment, the structure is the same as the first embodiment except that (1) a cover 250 (see FIGS. 13 and 14) covering the discharge nozzle 20 is further provided, as described later. In the following description, the same components as those of the substrate processing apparatus of the first embodiment are the same as those in 88108.doc -31-200410765. The structure of these same symbols The elements have been described in the first embodiment, so the description of this embodiment is omitted. ≪ 3.1. Structure of the substrate processing apparatus of the third embodiment> The substrate processing apparatus 200 of the third embodiment and the first embodiment Similarly, the substrate processing apparatus 1 and the substrate processing apparatus 100 of the second embodiment are arranged before or after the cleaning processing unit, and the angular substrate W is moved along the substantially horizontal transport path, and the substrate W A device that discharges plasma gas to remove pollutants such as organic matter attached to the substrate W. The cover 250 is a cylindrical cover having an opening 252 in a lower portion thereof. As shown in FIGS. 13 and 14, a cover 250 is disposed in the processing chamber 10 to cover the discharge nozzle 20 and the flow path of the gas flow FL51 of the plasma gas discharged from the discharge nozzle 20. Therefore, the gas flow FL51 is not affected by the air flow FL52 in the processing chamber 10, and a plasma gas can be supplied on the substrate W. In addition, a flat flange portion 251 is provided near the substrate W in the lower portion of the protective cover 250 before and after the substrate W in the traveling direction AR1. Therefore, the plasma discharged from the discharge nozzle 20 and passed through the opening portion 252 is introduced into the space sandwiched by the flange portion 251 and the substrate W; the plasma gas can be efficiently supplied to the substrate W. In addition, the substrate processing using the substrate processing apparatus 200 to remove organic matter adhering to the substrate W is the same as the processing procedure described in the first embodiment, and therefore, the description is omitted here. < 3.2. Advantages of the substrate processing apparatus of the third embodiment> In the substrate processing apparatus 200 of the third embodiment described above, the discharge nozzle 20 and the plasma gas discharged from the discharge nozzle 20 are covered by the cover 250. The flow path of the gas flow FL51 is not affected by the air flow FL52 in the processing chamber 10-32-88108.doc 200410765, and the plasma gas is supplied to the substrate w. Therefore, compared with the substrate processing apparatus of the first embodiment, the plasma gas can be further uniformly supplied to the substrate w, and the organic matter attached to the substrate W can be uniformly removed on the entire substrate W. < 4. Fourth Embodiment > Continuing, the fourth embodiment will be described. Fig. 15 is a front view schematically showing a substrate processing apparatus 600 according to a fourth embodiment of the present invention. 16 is a side view of a substrate processing apparatus 600 according to a fourth embodiment. The substrate processing apparatus 600 of the fourth embodiment is compared with the first embodiment. As will be described later, except that the side rectifying plate 30 and the lower rectifying plate 31 are not used, and the inside of the processing chamber 10 is moved by using a transfer roller 615. The air flow and the plasma gas flow are rectified, which is the same as the first embodiment. Therefore, the differences will be described below. In the following description, the same components as those of the substrate processing apparatus of the first embodiment are denoted by the same reference numerals. These constituent elements having the same symbols have been described in the first embodiment, so the description of this embodiment is omitted. < 4 · 1 · Structure of the substrate processing apparatus of the fourth embodiment> The substrate processing apparatus 600 of the fourth embodiment and the substrate processing apparatus 1 of the first embodiment 'the substrate processing apparatus 100 of the second embodiment Similar to the substrate processing apparatus 200 according to the third embodiment, it is arranged before or after the cleaning processing unit, and the angular substrate W is moved along a conveying path along a substantially horizontal direction, and the plasma gas is discharged on the substrate W. To remove organic matter and other pollutants attached to the substrate W. -33- 88108.doc 200410765 As shown in FIG. 15 and FIG. 16, the conveyance roller 615 is a cylindrical roller extending in the Y-axis direction, and is configured by arranging several in the X-axis direction. As shown in FIG. 6, each of the conveyance rollers 615 is provided so that a roller rotation shaft 615a substantially parallel to the γ axis is inserted near its center. In addition, one end of the drum rotation shaft 61 is connected to a driving motor (not shown) in an interlocking manner. Therefore, the transfer roller 615 can move the substrate W mounted thereon linearly in the positive or negative direction of the X axis. As shown in FIG. 16, the length in the γ-axis direction of the conveyance roller 615 is greater than the length in the γ-axis universal direction of the substrate w, and the end portions 615 b constituting the conveyance roller 615 cry out from both ends of the substrate w. Then, by the end portions 615b of the protruding portions at both ends of the conveyance roller 615, the clean air flow FL92b supplied from the passing unit n flows from the end portion 615b to the outside. Therefore, the gas flow holes supplied to the edge of the substrate w ... the influence of the airflow FL92b < arrives at the substrate without interference, and the entire substrate W can be uniformly processed by plasma gas. In addition, as shown in FIG. 15, the transport rollers 615 are disposed in the processing chamber 10 so as not to interfere with the adjacent transport rollers 615 to the extent that they are disposed in the processing chamber 10: that is, each of the transport rollers 615 is disposed in the processing chamber 10. The distance between the center of the transport roller 615 and the center of the adjacent transport roller 615 is set to a diameter larger than the diameter of the transport roller…. The lower area of the 1% “bei” angle ζυ is approximately locked by the conveying roller 615. Therefore, even if there is no substrate _ near the bottom of the discharge nozzle plate, it is still the same as the lower flow plate 31 of the first embodiment. The gas flow of Denso gas from the material section # of the discharge nozzle 20? 191 is not affected by the air flow hole 921). Therefore, the gas flow of the plasma gas discharged from the end edge of the discharge 22 & 20 & ^ 88108.doc -34- 200410765 The same flow of the plasma flow FL9 1 of the plasma gas discharged from Central Shao. In addition, 'substrate processing using a substrate processing apparatus 600 to remove organic substances attached to the substrate W' and the first The processing procedure described in the embodiment is the same, so the description is omitted here. <4. 2 · Advantages of the substrate processing apparatus of the fourth embodiment> In the substrate processing apparatus 600 of the fourth embodiment described above, ( 1) The length of the y-axis direction constituting the conveying roller 615 is greater than the length in the ¥ axis direction of the substrate boundary. The end 615b of the conveying roller 615 protrudes from both ends of the substrate W. (2) A plurality of ^ Transport the roller 615 and set it to each phase Adjacent transfer rollers 615 do not interfere with each other to a close extent. As a result, the plurality of transfer rollers 615 exert the same function on the substrate W as the side rectifying plate 30 and the lower rectifying plate 31 of the first embodiment. Therefore, they are the same as the first implementation. In the same manner, the plasma gas flow fL9 丨 is maintained at the central portion and the edge portion of the substrate W4, and the plasma gas can be uniformly supplied throughout the substrate W. Therefore, the substrate W4 can be uniformly attached to the substrate w Organic matter removal processing on w. < 5. Fifth Embodiment > The fifth embodiment is described below. The substrate processing apparatus of the fifth embodiment and the substrate processing apparatuses of the first to fourth embodiments. Similarly, it is a device that is disposed before or after the cleaning processing unit, and removes the plasma and other gas on the substrate by moving the angular substrate w to remove the organic matter attached to the substrate w. However, the first The substrate processing apparatuses of the five embodiments are different from the substrate processing apparatuses of the first to third embodiments in that the substrate W is held on the wool substrate holding portion 3 60 and the discharge nozzle 3 is moved 2 q, and the plasma gas is supplied to the substrate W to perform a removal process (refer to FIGS. 17 and 18). 88108.doc -35- 200410765 This difference will be described below. In addition, in FIGS. 17 and 18, The constituent elements having the same constituent elements of the substrate processing apparatus of the first embodiment are denoted by the same reference numerals. These constituent elements of the same reference numerals have already been described in the first embodiment, so the description of this embodiment is omitted. ≪ 5.1. 第Structure of Substrate Processing Apparatus of Five Embodiments Fig. 17 is a front view schematically showing a substrate processing apparatus 300 according to a fifth embodiment of the present invention. In addition, Fig. 18 is a schematic top view of a substrate processing apparatus 300 according to the fifth embodiment. As shown in FIG. 5, the substrate processing apparatus 300 is mainly composed of a processing chamber 3 iq, a substrate holding section 3 60, a discharge nozzle 320, and a rectifying plate 33. The processing chamber 310 is a frame that houses the discharge nozzle 32o, the rectifying plate 3, and the like inside. As shown in Fig. 17, an opening portion 312 is provided on one of the side surfaces orthogonal to the other axis of the processing chamber 31o. The substrate W is carried into the processing chamber 310 from the opening 312 by the carrying unit 380, and substrate processing by plasma gas is performed as described later. Then, after the substrate processing is completed, the substrate material is carried out of the processing chamber 31o by the transfer unit 380. A filter unit " is arranged at the upper part of the processing chamber 310, and an exhaust pump 41 is connected to the lower part of the processing chamber 310 via a pipe 45b. Therefore, the clean air supplied from the upper part of the processing chamber 31o to the lower part via the filter unit 排出 is exhausted from the exhaust port 40 by the exhaust pump 41 connected to the lower part of the processing chamber 3ΐα, and within the processing ▲ 3 1〇 Shao formed a stream of clean air. The substrate holding portion 360 sucks and holds the substrate material in a substantially horizontal posture. As shown by _, the lower portion of the substrate holding portion 360 is fixed to the top end portion of the movable portion 36k of the cylinder. Therefore, the substrate holding portion 36o is raised to approximately the same direction as the opening 88108.doc -36-200410765 P312 by the reel, and the substrate w can be transported to and from the transfer unit. The discharge nozzle 320 discharges the plasma gas toward the substrate W in the same manner as the discharge nozzle 20 of the first embodiment, and is mounted on the lower portion of the nozzle arm 37. As shown in FIG. 18 and FIG. 18, the discharge nozzle 32 is passed through the piping 25, the gate, the filter 23, the piping provided in the arm driving section 371 (omitted), and the piping provided in the nozzle arm 370 (omitted) Is connected to the processing gas supply source 21. Therefore, by opening the valve 22, the processing gas from which the particles are removed by the filter 23 is supplied to the #out nozzle 3 2 0. -In the discharge nozzle 320, two electrodes are arranged in the same position as the discharge nozzle 20 of the first embodiment (see Fig. 3). As a result of the potential difference imparted to these two sheets of electrode, the processing gas supplied from the processing gas supply source is plasmatized. As shown in Figs. 17 and 18, the guide rail 375 is arranged near the inner side of the side surface opposite to the side surface of the processing chamber 3 10 provided with the opening part. In addition, the nozzle arm p 0 is provided so as to be movable along the guide rail 5 by the arm driving portion 371 ′ in a substantially horizontal field universal AR2 and the opposite direction. Therefore, as shown in the drawing, the discharge nozzle 320 is discharged from the discharge nozzle. The position γ〇 passes from the substrate to the position γι 'can be moved along the scanning direction AR2 or linearly in a direction opposite to the scanning direction ar2' can be moved back and forth (scanning back and forth) over the entire substrate W Plasma-treated processing gas (plasma gas rectifier rectifier 330 is a plate-like member (frame) arranged around the substrate evaluation board, which is equivalent to the side rectifier 3G of the first embodiment. Furthermore, As described previously, the shape of the substrate is maintained on the training pad, and the nozzle 8810. (j0c-37-200410765) is moved and discharged, and the plasma gas is supplied on the substrate W. Therefore, When plasma gas is used, the substrate W always exists inside the rectifier plate 330, and no air flow FL62 flows into the rectifier plate 330. Therefore, this embodiment does not need to provide a rectifier plate equivalent to the lower rectifier plate 31 in the first embodiment. By simply equivalent to The rectifying plate 330 of the surface rectifying plate 30 is provided so as to surround the four sides of the substrate W and is approximately the same height as the substrate W, so that the gas flow FL61 (see FIG. 19) supplying a uniform plasma gas is not affected by the air flow FL62. ≪ 5.2. Substrate processing procedure> The following describes a processing procedure for removing organic matter adhering to the substrate W using the substrate processing apparatus 300 of this embodiment. In addition, in the following removal processing procedure, borrowing is continuously supplied in the processing chamber 310. The cleaned air from the purifier unit 11 is exhausted from the atmosphere in the processing chamber 310 by the exhaust pump 41. Therefore, a cleaned air flow FL62 is continuously formed in the processing chambers 3 to 10. In the removal process, first, The ejection nozzle 320 is ejected by moving the ejection nozzle 320 from the substrate W to the ejection position Y0. Next, the substrate holding portion 360 is raised by the reel 3 62 and the substrate W is obtained from the conveying unit 380. Continue, lowering the substrate holding Section 360 so that the substrate W and the rectifying plate 3 30 are approximately the same height. Continue along the guide rail 375 and move the arm driving section 371 in the scanning direction AR2 to pass the discharge nozzle 320 from the scanning position Y0 The plate W is moved to the scanning position Y. In addition, the valve 22 is opened at the same time as the discharge nozzle 320 starts to move, and a potential difference is applied to the electrodes in the discharge nozzle 320. Therefore, the process from the processing gas supply source 21 to the discharge nozzle 320 The gas is plasmatized by the electrode. Then, the plasmatized process gas (plasma gas) is discharged below the discharge nozzle 320. Thus, the electricity is discharged from the discharge nozzle 320. 88108.doc -38- 200410765 The gas is moved on the substrate W from the scanning position Y0 to Y1 at the same time, and the organic matter attached to the substrate W can be removed. Then, when the discharge nozzle 320 reaches the scanning position Y1, the arm driving section 371 is stopped, and the movement of the discharge nozzle 320 is stopped. In addition, while the discharge nozzle 320 is stopped, the potential difference between the electrodes in the discharge nozzle 320 is "zero". By closing the valve 22, the plasma gas is stopped from being discharged, and the removal process is completed. < 5.3. Advantages of the substrate processing apparatus of the fifth embodiment> In the substrate processing apparatus 300 of the fifth embodiment described above, the substrate W is held on the substrate holding portion 360, the discharge nozzle 320 is moved, and the discharge nozzle is self-discharged at the same time. 320 When supplying and plasma gas to the substrate W to remove organic matter on the substrate W, by providing a rectifying plate 330 around the substrate W, it is possible to suppress the influence of the air flow FL62 in the processing chamber 10 to reach the substrate. The gas flow FL61 of the plasma gas at the W edge is disturbed. Therefore, the plasma gas can be uniformly supplied to the central portion and the edge portion of the substrate W, and the removal process can be uniformly performed on the entire substrate W. In addition, a modification of the fifth embodiment may be configured such that the substrate holding portion 360 that holds the substrate W is moved to relatively move. < 6. Sixth Embodiment > Fig. 20 is a front view of a substrate processing apparatus 400 according to a sixth embodiment of the present invention. 21 is a top view of a substrate processing apparatus 400 according to the sixth embodiment. As shown in FIG. 20, the substrate processing apparatus 400 mainly includes a processing chamber 410, a heating unit 485, and a rectifier plate 430. The processing chamber 410 is a frame containing a heating unit 485, a rectifying plate 430, etc. 88108.doc -39- 200410765 inside. As shown in Fig. 20, an opening 412 is provided on one of the side surfaces orthogonal to the other axis of the processing chamber 41o. The substrate w is carried into the processing chamber 410 by the carrying unit 480 and the opening unit 412, and is heated by a heating unit ^ described later. Then, at the end of the heating process, the substrate w is carried out of the processing chamber 410 by the carrying unit 480 again. As shown in Figs. 20 and 21, the heating unit 485 is a unit that performs heat treatment by supporting the substrate% from below in a point contact state by a plurality of support portions 481 standing on the heating unit 485. The support portion 481 # is composed of two types: a fixed support 481b for supporting the substrate W in a substantially horizontal state, and a moving support portion 481a for raising and lowering the substrate w. Therefore, by moving the moving support portion 481a so that the upper end of the moving support portion 481a is approximately the same height as the opening Shao 412, the substrate W can be delivered between the conveying unit 480 (see Fig. 20 (a)). In addition, after the substrate w is delivered, the moving support portion 481a is lowered and the substrate W is supported by the fixed support portion 481b, so that the substrate w and the rectifying plate 430 can be made substantially the same height (see FIG. 20 (b)). The rectifying plate 43 0 ′ is a plate-like member (frame body) that is arranged at approximately the same height as the substrate boundary supported by the support portion 481 and surrounds the substrate W, and is used to radiate heat from the heating unit 4 8 5. And the heat convection generated by the heating unit 4 8 5 (hereinafter, the heat radiation and heat convection are collectively referred to as "heat flow") are rectified. FIG. 22 is an explanatory diagram of the heat flow when a rectifying plate 430 is provided around the substrate W. FIG. As shown in Fig. 22 (a), when the rectifying plate 430 is not provided, the heat flux 71 & from the heating unit 485 to the vicinity of the end edge of the substrate W is diffused to the top because there is no shield above. In addition, since the self-heating unit 485 88108.doc -40- 200410765 reaches the central portion of the heat flow FL7 lb of the substrate W, the substrate W can be effectively heated because almost all of the thermal energy is transmitted to the substrate W. Therefore, the heating conditions of the edge portion and the center portion of the substrate W are different. Therefore, in this embodiment, as shown in FIG. 22 (b), a rectifying plate 430 is provided around the substrate W. As shown in FIG. By providing the rectifying plate 430, the heat flow FL72a reaching the vicinity of the edge of the substrate W does not spread to the upper side, and heat can be conducted to the substrate W and the rectifying plate 430. Therefore, the heat flow FL72a at the edge portion of the substrate W and the heat flow FL72b at the center portion can be kept uniform, and the entire substrate W can be uniformly heated.
如以上說明，本實施形態藉由加熱單元485進行將基板W 一 予以加熱之加熱處理時，藉由於基板W周圍設置整流板430 ，而與第一至第五種實施形態之基板處理裝置中，將空氣 流予以整流同樣地，本實施形態亦將基板W端緣部之熱流 予以整流，可對基板W各部分均一地供給熱能。因此可對 基板W均一地實施加熱處理。 <7.變形例> 以上係說明本發明，不過本發明並不限定於上述實施形 態，而可作各種變形。 (1) 第一至第五種實施形態，係使用電漿氣體除去基板W 附著之有機物，不過並不限定於此，如亦可自排出噴嘴供 給經離子化之處理氧體至基板W上，進行將基板W表面除電 之處理，或是亦可自排出噴嘴供給處理液，來進行特定之 基板處理。 (2) 第五種實施形態係將角型基板W保持於基板保持部 360上，藉由在該基板W周圍設置整流板430，實施除去有 88108.doc -41 - 200410765 機物之處理，不過並不限定於此，如亦可設置甜甜圈狀之 整流板，來對圓形之基板實施除去處理。 【圖式簡單說明】 圖1係本發明第一種實施形態之基板處理裝置之正面圖。 圖2係本發明第一種實施形態之基板處理裝置之側面圖。 圖3係本發明第一種實施形態之排出噴嘴之說明圖。 圖4係本發明第一種實施形態之侧面整流板之說明圖。 圖5係顯示使用本發明第一種實施形態之側面整流板時 之處理氣體之氣體流及處理室内之氣流圖。 — 圖6(a)-(b)係本發明第一種實施形態之侧面整流板之說明 圖。 圖7係顯示使用本發明第一種實施形態之側面整流板時 之處理氣體之氣體流及處理室内之氣流圖。 圖8(a)-(b)係本發明第一種實施形態之下部整流板之說明 圖。 圖9係顯示使用本發明第一種實施形態之侧面整流板及 下部整流板時之處理氣體之氣體流及處理室内之氣流圖。 圖10係說明本發明第一種實施形態之基板處理之時間圖。 圖11係本發明第二種實施形態之基板處理裝置之正面圖。 圖12係本發明第二種實施形態之基板處理裝置之侧面圖。 圖13係本發明第三種實施形態之基板處理裝置之正面圖。 圖14係本發明第三種實施形態之基板處理裝置之側面圖。 圖15係本發明第四種實施形態之基板處理裝置之正面圖。 圖16係本發明第四種實施形態之基板處理裝置之側面圖。 88108.doc -42- 200410765 圖17係本發明第五種實施形態之基板處理裝置之正面圖。 圖18係本發明第五種實施形態之基板處理裝置之側面圖。 圖19係顯示使用本發明第五種實施形態之侧面整流板時 之處理氣體之氣體流及處理室内之氣流圖。 圖20(a)-(b)係本發明第六種實施形態之基板處理裝置之 正面圖。 圖21係本發明第六種實施形態之基板處理裝置之側面圖。 圖22(a)-(b)係顯示使用本發明第六種實施形態之側面整 流板時之熱流圖。 圖23係先前之基板處理裝置之正面圖。 圖24係先前之基板處理裝置之侧面圖。 圖25係先前之基板處理裝置之侧面圖。 圖26(a)-(b)係本發明第一種實施形態之下部整流板之說 明圖。 圖27係顯示使用本發明第一種實施形態之下部整流板時 之處理氣體之氣體流及處理室内之氣流圖。 圖28係不使用本發明第一種實施形態之侧面整流板及下 部整流板，而藉由電漿氣體除去基板表面之有機物時，表 示對應於基板表面上之各測定點之接觸角之圖。 圖29係僅使用本發明第一種實施形態之下部整流板，而 藉由電漿氣體除去基板表面之有機物時，表示對應於基板 表面上之各測定點之接觸角之圖。 圖3 0係使用本發明第一種實施形態之側面整流板及下部 整流板，而藉由電漿氣體除去基板表面之有機物時，表示 88108.doc -43- 200410765 對應於基板端緣部表面上之各測定點之接觸角之圖。 圖3 1係改變本發明第二種實施形態之下部整流板之上面 與基板下面之距離時，表示對應於各測定點之接觸角之圖。 【圖式代表符號說明】 1 基板處理裝置 10 處理室 15 搬運滾筒 20 排出喷嘴 20a 電極 — 30 /側面整流板 31 下部整流板 41 排氣泵 250 護蓋 330 整流板 360 基板保持部 W 基板 88108.doc -44-As described above, when the substrate W is heated by the heating unit 485 in this embodiment, the rectification plate 430 is provided around the substrate W, which is the same as the substrate processing apparatuses of the first to fifth embodiments. Similarly, the air flow is rectified. In this embodiment, the heat flow at the edge of the substrate W is rectified, so that each part of the substrate W can be uniformly supplied with thermal energy. Therefore, the substrate W can be uniformly heat-treated. < 7. Modifications > The present invention has been described above, but the present invention is not limited to the above-mentioned embodiments, and various modifications can be made. (1) The first to fifth embodiments use plasma gas to remove organic matter adhered to the substrate W, but the invention is not limited to this. For example, if the ionized treatment oxygen is supplied from the discharge nozzle to the substrate W, The surface of the substrate W is destaticized, or a processing liquid may be supplied from a discharge nozzle to perform a specific substrate processing. (2) In the fifth embodiment, the angle-shaped substrate W is held on the substrate holding portion 360, and a rectifying plate 430 is provided around the substrate W to perform a process of removing the 88108.doc -41-200410765 machine. It is not limited to this. For example, a donut-shaped rectifying plate may be provided to remove the circular substrate. [Brief description of the drawings] FIG. 1 is a front view of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a side view of a substrate processing apparatus according to a first embodiment of the present invention. Fig. 3 is an explanatory view of a discharge nozzle according to a first embodiment of the present invention. FIG. 4 is an explanatory diagram of a side rectifying plate according to the first embodiment of the present invention. Fig. 5 is a diagram showing a gas flow of a processing gas and a gas flow in a processing chamber when the side rectifying plate of the first embodiment of the present invention is used. — Figures 6 (a)-(b) are explanatory diagrams of a side rectifying plate according to the first embodiment of the present invention. Fig. 7 is a diagram showing a gas flow of a processing gas and a gas flow in a processing chamber when the side rectifying plate of the first embodiment of the present invention is used. 8 (a)-(b) are explanatory diagrams of the lower rectifying plate of the first embodiment of the present invention. Fig. 9 is a diagram showing the gas flow of the processing gas and the air flow in the processing chamber when the side rectifying plate and the lower rectifying plate of the first embodiment of the present invention are used. FIG. 10 is a timing chart illustrating substrate processing in the first embodiment of the present invention. 11 is a front view of a substrate processing apparatus according to a second embodiment of the present invention. FIG. 12 is a side view of a substrate processing apparatus according to a second embodiment of the present invention. 13 is a front view of a substrate processing apparatus according to a third embodiment of the present invention. FIG. 14 is a side view of a substrate processing apparatus according to a third embodiment of the present invention. 15 is a front view of a substrate processing apparatus according to a fourth embodiment of the present invention. 16 is a side view of a substrate processing apparatus according to a fourth embodiment of the present invention. 88108.doc -42- 200410765 Fig. 17 is a front view of a substrate processing apparatus according to a fifth embodiment of the present invention. 18 is a side view of a substrate processing apparatus according to a fifth embodiment of the present invention. Fig. 19 is a diagram showing a gas flow of a processing gas and a gas flow in a processing chamber when a side rectifying plate of a fifth embodiment of the present invention is used. 20 (a)-(b) are front views of a substrate processing apparatus according to a sixth embodiment of the present invention. 21 is a side view of a substrate processing apparatus according to a sixth embodiment of the present invention. Figures 22 (a)-(b) are diagrams showing the heat flow when a side rectifying plate according to a sixth embodiment of the present invention is used. FIG. 23 is a front view of a conventional substrate processing apparatus. FIG. 24 is a side view of a conventional substrate processing apparatus. Fig. 25 is a side view of a conventional substrate processing apparatus. 26 (a)-(b) are explanatory diagrams of the lower rectifying plate of the first embodiment of the present invention. Fig. 27 is a diagram showing a gas flow of a processing gas and a gas flow in a processing chamber when the lower rectifying plate of the first embodiment of the present invention is used. Fig. 28 is a diagram showing contact angles corresponding to measurement points on the substrate surface when the organic matter on the substrate surface is removed by plasma gas without using the side rectifier plate and the lower rectifier plate of the first embodiment of the present invention. Fig. 29 is a diagram showing contact angles corresponding to measurement points on the substrate surface when only the lower rectifying plate of the first embodiment of the present invention is used, and organic matter on the substrate surface is removed by plasma gas. Fig. 3 0 is a side rectifier plate and a lower rectifier plate of the first embodiment of the present invention, and when the organic matter on the substrate surface is removed by plasma gas, it shows that 88108.doc -43- 200410765 corresponds to the surface of the edge of the substrate The contact angle of each measurement point. Fig. 31 is a diagram showing the contact angle corresponding to each measurement point when the distance between the upper surface of the lower rectifying plate and the lower surface of the substrate is changed according to the second embodiment of the present invention. [Illustration of representative symbols] 1 substrate processing device 10 processing chamber 15 conveying roller 20 discharge nozzle 20a electrode — 30 / side rectifying plate 31 lower rectifying plate 41 exhaust pump 250 cover 330 rectifying plate 360 substrate holding portion W substrate 88108. doc -44-