TW200304956A - Vapor organic material deposition method and vapor organic material deposition apparatus using the same - Google Patents

Vapor organic material deposition method and vapor organic material deposition apparatus using the same Download PDF

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TW200304956A
TW200304956A TW92107266A TW92107266A TW200304956A TW 200304956 A TW200304956 A TW 200304956A TW 92107266 A TW92107266 A TW 92107266A TW 92107266 A TW92107266 A TW 92107266A TW 200304956 A TW200304956 A TW 200304956A
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Taiwan
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organic material
gas
deposition
phase
organic
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TW92107266A
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Chinese (zh)
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Dong-Soo Kim
Dong-Kwon Choi
Kyung-Bin Bae
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Ans Inc
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Priority claimed from KR1020020017755A external-priority patent/KR100358727B1/en
Priority claimed from KR10-2002-0061629A external-priority patent/KR100375076B1/en
Application filed by Ans Inc filed Critical Ans Inc
Publication of TW200304956A publication Critical patent/TW200304956A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Abstract

The present invention relates to a vapor organic material deposition method and a vapor organic material deposition apparatus using the same which are capable of fast growing a thin film uniformly on a wider substrate by spraying a vapor organic material in a gravity direction using a spraying unit installed in an upper side of the same and accurately and stably adjusting a thickness of a wider substrate of an organic thin film by using a diluting gas as a deposition material and continuously carrying a small size heat source to a scan head.

Description

200304956 五、犛明說明（1) •發明所屬之技術領域 及在半導體設備的製造設備和該設備的製造方法 別咔：！有機材料沈積方法和氣相有機材料沈積設備，特 一種氣相有機材料沈積方法和使用該方法的氣 2有機材料沈積設備，該設備可以通過如下方式在更宽某 =上=快速生”膜：使用安裝在該設備上方的噴$ > = 方向喷霧氣相有機材料和通過使用稀釋氣體作 和連續攜帶少量熱源到掃描頭而精確和；= 調即有機薄膜更寬基材的厚度。 疋 二·先前技術 近來，採用功 的薄膜形成技 器件材料等， 在迄今為止開 所用的真空沈 蒸發源，在熱 面描述使用真 造。提供有與 空通風單元在 下部的至少一 機薄膜材料的 形或長方體容 英、陶瓷等作 能南分子作 術集中於導 包括半導體 發的有機薄 積方法是這 蒸發源上安 空沈積方法 真空腔連接 真空腔中保 種以上的有 有機材料。 器。在容器 為容器材料 為有機 電材料 記憶體 膜形成 樣實現 裝膜生 的有機 的真空 持某種 機薄膜 有機薄 中提供 。將加 化合物和 、光電子 的絕緣層 方法中的 的：在真 長基材以 薄膜形成 通風單元 真空狀態 材料的熱 膜材料的 有膜生長 熱用加熱 有機金屬化合物 材料、電致發光 材料。 一種代表性技術 空腔上部安裝熱 便形成薄膜。下 設備的簡要構 。因此，使用真 。從位於真空腔 蒸發源蒸發為有 熱蒸發源是圓筒 的有機材料。石 器以某種方式纏 200304956200304956 V. Explanation of the Ming Dynasty (1) • The technical field to which the invention belongs and the manufacturing equipment for semiconductor equipment and the manufacturing method of the equipment Don't click! Organic material deposition method and vapor-phase organic material deposition device, and particularly a vapor-phase organic material deposition method and a gas 2 organic material deposition device using the method, the device can be used in the following manner to broaden a certain film = on = rapidly produced film: use The spray installed above the device is equal to the direction of spraying the vapor-phase organic material and is precise and accurate by using a diluent gas and continuously carrying a small amount of heat source to the scanning head; = the thickness of the organic film is wider than the base material. The prior art has recently used vacuum thin film forming technology device materials, etc., which have been used so far, and are described on the hot side. They are provided with at least one thin film material in the lower part of the empty ventilation unit. Rectangle cuboids, ceramics, and other molecular techniques are focused on conducting organic thin deposits, including semiconductors. The evaporation source is an air deposition method. A vacuum chamber is connected to the vacuum chamber to contain more than organic materials. Container. In a container The organic vacuum material for the container material is an organic electrical material. The film is provided in an organic thin film. In the method of adding a compound and a photoelectron insulating layer, a thermal film material with a film forming a ventilation unit vacuum state material on a true-length substrate has a film growth heat for heating an organic metal compound material, electricity Photoluminescence material. A representative technique is to install a thin film on the upper part of the cavity. A brief structure of the lower device. Therefore, use true. Evaporation from a vacuum source located in a vacuum chamber to a thermal organic source is a cylindrical organic material. Way to wrap around 200304956

繞在容器單元的表面上。富狍加電源時，θ器環 溫度增加，同時容器被加熱。當達到—定溫度時，2 蒸發。在此時，由安裝在容器下部或上部的溫度調節 單元測量溫度。因此，可以使有機蒸發材料維持恒 ^ 以獲得所需的蒸發速率。將蒸發的有機材料攜帶到距ς ς 器上部一定距離的由玻璃或晶片材料形成的基材。 上通過吸收、沈積、再蒸發工藝硬化攜帶來的有 ς， 以形成薄膜。 Τ 在此，在有機薄膜材料的有 高，高溫分解溫度接近於蒸 間控制有機物的蒸發速率， 積。從真空腔中熱蒸發源蒸 熱蒸發源容器上部坩堝孔形 限於有限範圍，使得不能獲 有機薄膜。此外，為形成均 取向的校正單元以一定速率 增大旋轉半徑和沈積設備。 的有效區域中形成有機薄膜 用效率因此了降低生產率。 如上所述，在電致 沈積方法中使用有 膜生長速率，低有 性，精細調節主體 成基於更大基材的 機化合物中，由於蒸氣壓較 發溫度，所以難以穩定地長時 使得不可能實施高速率薄膜沈 發的有機薄膜材料具有相應於 ，的某些取向並且在基材上受 得在寬面積基材上形成均勻的 1的有機薄膜，採用具有某些 旋轉基材同時使膜生長，因此 此外，由於在真空設備不必要 降低了昂貴的有機材料的使 的應用中，在真空 有如下問題：如低 機薄膜的非均勻 合量的難度，和形 。作為以上問題的Wrap around the surface of the container unit. When 狍 is powered up, the temperature of the theta device ring increases and the container is heated. When a certain temperature is reached, 2 evaporates. At this time, the temperature is measured by a temperature adjustment unit installed at the lower or upper part of the container. Therefore, the organic evaporation material can be maintained constant to obtain a desired evaporation rate. Carry the evaporated organic material to a substrate made of glass or wafer at a distance from the top of the device. It is hardened by absorption, deposition, and re-evaporation to form a thin film. Τ Here, the organic thin film material is high, and the high-temperature decomposition temperature is close to that of the evaporation chamber to control the evaporation rate of the organic matter. Steaming from the thermal evaporation source in the vacuum chamber The crucible hole shape of the upper part of the thermal evaporation source container is limited to a limited range, making it impossible to obtain organic thin films. In addition, the correction unit increases the radius of rotation and sedimentation equipment at a certain rate to form a uniform orientation correction unit. The formation efficiency of the organic thin film in the effective region is thus reduced in productivity. As mentioned above, in the electrodeposition method, a film growth rate is used, low in nature, and the body is finely adjusted to the organic compound based on a larger substrate. Because the vapor pressure is higher than the temperature, it is difficult to stably make it long. The organic thin film material that implements high-rate thin-film deposition has certain orientations corresponding to, and can withstand, on the substrate, an organic thin film that forms a uniform 1 on a wide-area substrate. The film is grown while using some rotating substrates Therefore, in addition, in the application that the vacuum equipment does not necessarily reduce the use of expensive organic materials, the vacuum has the following problems, such as the difficulty of non-uniform composition of the low-membrane film, and shape. As the above question

發光設備和功能薄膜 機薄膜製造產品時， 機材料使用效率，有 材料和摻雜劑材料混 均勻有機薄膜的難度Light-emitting devices and functional films When manufacturing organic films, the efficiency of using organic materials is difficult, and it is difficult to mix organic materials with dopant materials.

200304956200304956

例子η ‘、合參考圖1描述現有的真空沈積設備。 圖1是說明現有的真空沈積設備的例子的視圖。 現有的真空沈積設備中，製備-定量的在 in-R ^ '尤積的某種材料，真空腔1的内部壓力降低到 附近掸：ί ΐ沈積材料是金屬，使用溫度調節設備在熔點 .^ σ屬，將溫度進行精細調節並升高到材料蒸發。 時’在翻塗層6上的材料開始蒸發，開啟先前配合的 閘門5，和蒸發的材料分子沈積在基材上。在此時，閘門5 用於防止在鉬塗層6上的材料蒸發之前剩餘雜質沈積 材上。 土 ^ ^樣構造的真空沈積設備中，不容易預測沈積材料的精 確1。因此，必須在鉬塗層6上製備大量材料。此外，由 於不可能在所需的方向誘導蒸氣，如果重復進行以上的沈 積過程，會污染腔室的内部。因此，在此情況下，應當产 潔腔室的内部，從而引起不方便。此外，在鉬塗層6上曰製月 ，的材料數量，閘門4的開啟和關閉時間，以及由溫度調 知的蒸發時間是厚度調節的變數。不可能精細調節以上變 數0 此外，在有機半導體製造方法中，有一種使用單元沈積源 的方法，以及由普林斯頓大學（Princet〇n university)的 Max Shtein等人提出的0VPD(有機氣相沈積）方法。 在使用單元沈積源罐的有機半導體製造方法中，需要較長 的時間以沈積有機半導體的每層。每層沈積所用的材料的 使用$較大。此外，存在的問題是沈積膜的密度和相對於 200304956 五、發明說明（4) 基材的枯合力變差。有機半導體大量生產的製造產量降 低。在用於大量生產寬面積基材的製造工藝中存在限制。 即，基材的面積限制尺寸是37〇 X 470mm。 0VPD方法涉及使用由Max Shtein等人在Axitron方法中提 出的用於氣相有機材料的載氣，製造用於有機半導體的每 個層的方法。相比於使用單元沈積源的方法，該方法能夠 更多地增加有機材料的使用效率。此外，理論上可以製造 寬面積基材的有機半導體。然而，使用〇VPD的^丨tr〇n方 法使用現有的CVD方法中的掃描頭。此外，測試2〇〇x2〇〇mmExample η ', and a conventional vacuum deposition apparatus is described with reference to FIG. 1. FIG. 1 is a view illustrating an example of a conventional vacuum deposition apparatus. In the existing vacuum deposition equipment, a certain amount of in-R ^ 'youji' material is prepared and quantified, and the internal pressure of the vacuum chamber 1 is reduced to the vicinity 掸: ΐ ΐ The deposition material is metal, and the temperature is adjusted at the melting point using a temperature adjustment device. ^ σ belongs to the fine adjustment of temperature and increase until the material evaporates. At that time, the material on the flip coating 6 starts to evaporate, the previously fitted gate 5 is opened, and the evaporated material molecules are deposited on the substrate. At this time, the gate 5 is used to prevent impurities remaining on the material before the material on the molybdenum coating layer 6 is evaporated. It is not easy to predict the accuracy of the deposited materials in vacuum deposition equipment with soil-like structures1. Therefore, a large amount of material must be prepared on the molybdenum coating 6. In addition, since it is impossible to induce vapor in a desired direction, if the above deposition process is repeated, the interior of the chamber will be contaminated. Therefore, in this case, the inside of the chamber should be cleaned, causing inconvenience. In addition, the amount of material used to make the month on the molybdenum coating 6, the opening and closing time of the shutter 4, and the evaporation time, which is temperature-adjusted, are variables of thickness adjustment. It is not possible to fine-tune the above variables. In addition, in the organic semiconductor manufacturing method, there is a method using a unit deposition source, and a 0 VPD (Organic Vapor Deposition) method proposed by Max Shtein et al. Of Princeton University. . In an organic semiconductor manufacturing method using a unit deposition source tank, it takes a long time to deposit each layer of the organic semiconductor. The material used for each layer of deposition is larger. In addition, there are problems in that the density of the deposited film and the cohesive force of the substrate are poor relative to 200304956 V. Description of the Invention (4). Mass production of organic semiconductors is reduced. There are limitations in the manufacturing process used to mass produce wide area substrates. That is, the area-restricted size of the substrate is 37 × 470 mm. The OVPD method involves a method for manufacturing each layer of an organic semiconductor using a carrier gas for a gas-phase organic material proposed by Max Shtein et al. In the Axitron method. This method can increase the use efficiency of organic materials more than the method using a unit deposition source. In addition, it is theoretically possible to manufacture an organic semiconductor with a wide area substrate. However, the Tr0n method using OVPD uses a scan head in an existing CVD method. In addition, test 2000x200mm

的基材。在此情況下，可發生有機薄膜不耐熱的問題。 此外，為在寬面積的基材上製造，必須製備一個大於37Q 470mm的喷頭。然而，在此情況下，構造該物質存在問 題。在Axitron方法的沈積方法中，固定沈積源罐714的虔 溫熱源和掃描頭。此外，在有機半導體製造的摻雜中，赶 過在系統内部提供至少兩個以上的掃描頭實施單獨的溫肩 調節。然而，在0VPD方法中，由於使用一個掃描頭，如身 使用具有不同熱性能的至少兩種以上的摻雜材料進行摻 雜，材料可能變化成具有熱性能差的材料。即，在現有备Substrate. In this case, a problem that the organic film is not heat-resistant may occur. In addition, in order to manufacture on a wide-area substrate, a nozzle larger than 37Q 470mm must be prepared. However, in this case, there is a problem in constructing the substance. In the deposition method of the Axitron method, a heat source and a scanning head of a deposition source tank 714 are fixed. In addition, in the doping of organic semiconductor manufacturing, separate temperature shoulder adjustment can be implemented by providing at least two scan heads inside the system. However, in the 0VPD method, due to the use of one scanning head, such as doping with at least two or more doping materials having different thermal properties, the materials may be changed into materials having poor thermal properties. That is, in existing equipment

法中，有機半導體材料不能报好地沈積在寬面㈣ 暴材上。 三.發明内容 因此，本發明的目的是提供一種氣相右 使用該方法的氣相有機材料沈積設備 二f積方法和 ’ 其能夠克服現有技In this method, organic semiconductor materials cannot be deposited on wide-area radon materials. III. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a gas phase organic material deposition apparatus using the method.

200304956 五、發明說明（5) 術中遇到的問題 本發明的另一目的是提供寬面積基材的氣相有機材料沈積 方法和使用該方法的氣相有機材料沈積設備，其能夠增加 薄膜相對於基材的粘合力，並通過稀釋沈積源罐内的 材料粒子精確和穩定地調節厚度以使基材上沈積有機 =導體材料，並通過使用緩衝腔和沈積腔的閘閥防止由掃 f碩熱源引起的寬面積基材上和沈積腔内部的溫度增加。 二ΐΐ上述目的，提供一種氣相有機材料沈積設備，該設 =匕括：沈積腔，該沈積腔具有：與外部分離的内部空 ς 部空間底表面中形成的用於安裝沈積氣相有機材 =母材料的母材料安裝部》，位於母材料安裝部分上部 用於在母材料安裝部分方向上喷霧氣相有機材料的喷 量的伴、田t ί 7 上的向上壁表面和側壁表面輕射熱 加熱器’· i少一個以上的有機材料腔，該有機材 媸趣：：有.至少一個以上的以孔形狀形成的載氣入口孔， 攜帶軋相有機材料的載氣通過該入口孔流入，至少一個以 成的氣相有機材料出口孔，通過該出口孔 =機=内部空間的加熱爐，以及有機材料加熱= 繞加熱爐的外周圍部分並將加熱爐的内 :加熱到有機材料蒸發所需的溫度；>充量控制器， :入：孔連接並控制流入有機材料腔内部的載氣量和流 機材料攜帶管…通過沈積腔和有機 的形式形成並以管子形狀形《，使得有機材料腔中的氣相200304956 V. Description of the invention (5) Problems encountered during the operation Another object of the present invention is to provide a vapor-phase organic material deposition method for a wide-area substrate and a vapor-phase organic material deposition device using the method, which can increase the relative The adhesion of the substrate, and the thickness of the material particles in the deposition source tank is diluted to accurately and stably adjust the thickness so that organic = conductive material is deposited on the substrate. The resulting increase in temperature on the wide-area substrate and inside the deposition chamber. For the above-mentioned purpose, a vapor-phase organic material deposition device is provided. The device includes: a deposition chamber having: an internal space separated from the outside, which is formed in the bottom surface of the space for installing and depositing vapor-phase organic materials. = The parent material installation part of the parent material ", which is located on the upper part of the parent material installation part and is used for spraying the amount of gas-phase organic material in the direction of the parent material installation part. The heat heater '· i has one or more organic material cavities. The organic material is interesting: Yes. At least one or more carrier gas inlet holes formed in a hole shape, and the carrier gas carrying the rolling phase organic material flows in through the inlet holes. , At least one gas-phase organic material outlet hole, through this outlet hole = machine = heating furnace in the internal space, and organic material heating = around the outer periphery of the heating furnace and inside the heating furnace: heating until the organic material evaporates Desired temperature; > Charge controller,: In: hole to connect and control the amount of carrier gas flowing into the organic material cavity and the flow machine material carrying tube ... through the deposition cavity and the organic form And is shaped into a tubular shape "such that the organic material vapor chamber

第10頁 200304956Page 10 200304956

和用於降低沈積腔内部壓力 有機材料被攜帶到喷霧單元 的真空泵。 為達到 法包括 面接觸 蒸發溫 加熱器 發的氣 中佈置 帶到喷 安裝部 面上。 上述目的，提供 第一步 的加熱 度的溫 圍繞的 相有機 有沈積 霧單元 分上部 驟：與包括 用加熱器輻 度，第二步 氣相有機材 材料攜帶到 氣相有機材 的氣相有機 中的母材料 種氣相有 有有機材 射熱量並 驟：通過 料攜帶管 沈積腔的 料的母材 材料在重 上部喷霧 機材料 料的有 將有機 由輻射 ，將由 喷霧單 料；和 力方向 ，並沈 沈積方 機材料 材料加 熱量的 加熱用元，其 第三步 從放置 積在母 腔的外表 熱至南於 固定溫度 加熱器蒸 中沈積腔 驟··將攜 在母材料 材料上表And a vacuum pump that reduces the pressure inside the deposition chamber and the organic material is carried to the spray unit. In order to achieve this method, the surface contact with the evaporation temperature of the heater is arranged in the air to the spray mounting surface. For the above purpose, the phase-organic deposition-mist unit provided with the temperature of the first stage of heating is divided into the upper stage: and the second-stage gas-phase organic material including the gas phase organic material carried to the gas-phase organic material is included in the second step. The parent material species in the gas phase has the heat of organic material emission: the parent material material of the material passing through the material carrying tube deposition chamber is in the upper upper sprayer material material and the organic material is radiated and the single material is sprayed; and In the direction of the force and the amount of heating of the material of the deposition machine, the third step is from placing the surface heat accumulated in the mother cavity to the south of the fixed temperature heater in the evaporation chamber. Above table

為達到上述目的，在氣相有機材料沈積設備中，提供寬面 積基材的氣相有機材料沈積設備，該設備包括：氣體加熱 器:用於通過調節其中含有惰性氣體的儲氣槽和MFC(質^ 机I控制器）而加熱惰性氣體；纏繞在連接管外部的用於 保持溫度的加熱器管；至少一個沈積源罐，該沈積源罐用 於貯存要沈積的氣體和有機材料，並在稀釋這些物質從而 氣態的稀釋的有機材料的狀態下由氣體加熱器加熱高 飢氟體和有機材料粒子；掃描頭和緩衝腔，它們具有用於 檢查和調節稀釋的有機材料粒子的移動的沈積速率調節翠 几；閘閥，用於實現閘控操作從而開啟和關閉稀釋的有機 材料粒子的流動；和沈積腔，用於將從沈積源罐流入的稀 釋粒子沈積到寬面積基材上；其中，氣體加熱器加熱氣體In order to achieve the above object, in the vapor-phase organic material deposition equipment, a vapor-phase organic material deposition equipment with a wide-area substrate is provided. The equipment includes: a gas heater: a gas storage tank for adjusting an inert gas and an MFC ( Controller) to heat inert gas; a heater tube wrapped around the connection tube to maintain temperature; at least one deposition source tank for storing gas and organic materials to be deposited, and These substances are diluted so that the gaseous diluted organic material is heated by the gas heater with high-fluorine and organic material particles; the scanning head and the buffer cavity have a deposition rate for checking and adjusting the movement of the diluted organic material particles Adjusting the Cuiji; gate valve for gated operation to open and close the flow of diluted organic material particles; and sedimentation chamber for depositing the diluted particles flowing from the deposition source tank onto a wide area substrate; among them, gas Heater heating gas

第11頁 200304956 五、發明說明（7) 以使沈積源罐調節裔骑μ旦# ^ i 安裝在緩衝腔和沈積腔熱源流入到氣體中；開閥 的在寶面籍其奸= 從而防止由掃描頭熱源引起 =寬=基材中和在沈積腔内部的溫度增加。 f的在氣相有機材料沈積方法中，提供寬面 積基材的氣相有機材料沈積方 二=並；熱源***到内部的氣體加； ^ ^ H) ^ Λ ^ ^ 4 # 'σΜΡ€( f * 繞友i表；&其Α Μ λ/的生體加熱的第一步驟；通過纏 氣體和有；i4加熱态官保持溫度的步驟；在稀釋高溫 : = Ϊ子得到稀釋的氣態有機材料的狀態下， 一個沈積ί Ϊ二ί貯存有要沈積的氣體和有機材料的至少 驟’ ★查和調節稀釋的有機材料粒子的 “有機沈！速率調節單元的用於開啟和關閉稀 的步驟.將二η:的流動的掃描頭和緩衝腔進行閘控操作 寬】=2和沈積源罐流入的稀釋粒子沈積在沈積 和將當掃描頭在緩衝腔中移動時 熱爐進行收集的步$過女裝用於有機材料再迴圈的輔助加 2達到上述㈣，在有機半導體設備的製造方法中 寬面積基材的氣相有機材料的沈積方法，該方法包括^ 箱：基材裝入沈積設備的沈積腔中；步驟’ ().預熱沈積源罐並在20(TC-60(TC的溫度下流入高Page 11 200304956 V. Description of the invention (7) In order to make the deposition source tank adjust the source riding μ Dan # ^ i installed in the buffer chamber and the sedimentation chamber heat source into the gas; open the valve on the surface of the treasure = to prevent The heat source of the scanning head causes = wide = increase in temperature of the substrate and inside the deposition chamber. In the vapor phase organic material deposition method of f, a gas phase organic material deposition method that provides a wide area substrate is equal to; a gas source with a heat source inserted into the interior; ^ ^ H) ^ Λ ^ ^ 4 # 'σΜΡ € (f * Around the i-table; & the first step of the biological heating of Α λ λ; by entanglement of the gas and there; i4 the step of heating the state to maintain the temperature; at the dilution high temperature: = Ϊ 子 gets diluted gaseous organic material In a state where at least one step of depositing a gas and organic material to be deposited is stored. At least one step of checking and adjusting the diluted organic material particles, "organic sinking! The rate adjusting unit is used to open and close the dilute step. The two η: flowing scanning head and buffer chamber are gated. The width is 2] and the diluted particles flowing in from the sink tank are deposited in the sink and the heating furnace collects the steps when the scan head moves in the buffer chamber. Women's clothing for organic material re-circulation auxiliary plus 2 to achieve the above-mentioned, in the method of manufacturing organic semiconductor equipment, a method for depositing a wide-area substrate of a vapor-phase organic material, the method includes a box: the substrate is loaded into the deposition equipment In the deposition chamber; step '() Preheating the deposition source in the tank 20 and flows into the high ((a temperature TC of TC-60

第12頁 200304956 五、發明說明（8) 溫氣體和有機材料粒子在沈積 物’並加熱從而產生SGHP(固 ••通過連接管將大量氣相有機 ，衝腔；步驟（S718) ··使用缓 器測量氣相有機材料的流量， 到設定量時開啟緩衝閘閥；步 作沈積氣相有機材料；步驟 時間之後，移走掃描頭；和步 並卸載基材。 溫氣體；步驟（S714) ··將高 源罐内部混合從而形成混合 氣多相）材料；步驟（S 71 6 ) 材料SGHP從沈積源罐攜帶到 衝腔中的氣相有機材料感測 並當氣相有機材料的流量達 驟（S 7 2 0 ) ·•根據掃描頭的操 (S722):在經過設定的沈積 驟（S724) ··關閉緩衝閘閥， 四·實施方式 〈第一實施方式〉 圖2A疋說明根據本發明的氣相有機材料沈積設備的面 圖。 =據本發明的氣相有機材料沈積設備包括根據本發明第一 只施方式的沈積腔，用於加熱有機材料並將其變為氣態的 f機材料腔，和包括有用於驅動喷霧氣相有機材料的喷霧 單元操作的驅動設備和有機材料腔的輔助腔。 根據本發明第一實施方式的沈積腔1 0 0包括内空間，内空 間與外部分離並具有使得沈積氣相有機材料的母材料1 0安 裝在該内空間底表面中的結構。此外，沈積腔丨00包括： 喷霧單元110，其位於母材料1〇的上部並用於喷霧氣相有 機材料到母材料1〇的上表面；導軌丨2〇，其與喷霧單元110 配合並縱向延伸，能與導板（未示出）滑動配合，而導板用Page 12 200304956 V. Description of the invention (8) Warm gas and organic material particles are deposited in the deposits and heated to generate SGHP (solid •• A large amount of gas phase is organically washed through the connecting pipe, and the cavity is flushed; step (S718). The device measures the flow rate of the gas-phase organic material, and opens the buffer gate valve when the set amount is reached; the step is used to deposit the gas-phase organic material; after the step time, the scanning head is removed; and the step and the substrate are unloaded. Warm gas; step (S714) ·· The interior of the high-source tank is mixed to form a mixed gas multi-phase) material; step (S 71 6) The material SGHP is sensed by the gas-phase organic material carried from the deposition source tank to the flushing cavity and when the flow of the gas-phase organic material reaches a sudden step ( S 7 2 0) · • According to the operation of the scanning head (S722): After the set-up deposition step (S724) ·· The buffer gate valve is closed. Fourth Embodiment <First Embodiment> FIG. View of phase organic material deposition equipment. = A vapor-phase organic material deposition apparatus according to the present invention includes a deposition chamber according to the first embodiment of the present invention, a f-machine material chamber for heating and turning organic materials into a gaseous state, and a device for driving a spray-phase organic gas. The material spraying unit operates a drive device and an auxiliary cavity for the organic material cavity. The deposition chamber 100 according to the first embodiment of the present invention includes an inner space which is separated from the outside and has a structure in which a mother material 10 for depositing a vapor-phase organic material is installed in a bottom surface of the inner space. In addition, the deposition chamber 00 includes: a spraying unit 110 which is located at an upper portion of the base material 10 and is used for spraying a vapor-phase organic material onto an upper surface of the base material 10; and a guide rail 20 which is matched with the spraying unit 110 and Longitudinal extension, can slide with the guide plate (not shown).

第13頁 200304956 五、發明說明（9) 一&quot; 於導引噴霧單元110的滑動移動；用於固定支撐導轨12〇的 導執支撐板1 2 2 ;和至少一個以上的保溫加熱器丨3 〇，其用 於通過將熱量輻射到外部而使沈積腔1 〇 〇内部保持在一 '定 溫度。 有機材料腔2 0 0具有這樣的結構：通過對貯存在内部的有 機材料進行加熱而使有機材料蒸發，具有管狀外形，並與 氣相有機材料攜帶管210連接，氣相有機材料攜帶管通過 沈積腔100與喷霧單元110連接，以便攜帶氣相有機材料^ _·- 喷霧單元110。 w 輔助腔300包括：移動軸130，其在與導軌12〇平行的方向 通，沈積腔1 00與喷霧單元丨丨〇配合以便沿導軌12〇移動喷 霧單元1〇〇 ;與移動轴130配合並根據與攜帶單元314的配 合而在與導執12〇平行的方向移動的移動塊312 ;和密封法 f 320、波紋管322及有機材料腔2〇〇，它們位於這樣一個 #位’其中氣相有機材料攜帶管210和移動軸130通過沈積 00，並用於緩衝沈積腔的高真空狀態與辅助腔3〇〇的低 二腔或備用狀態之間的真空差，和用於分離這些物質以 便連接上面兩個腔。 一 圖2B是根據本發明的沿圖2A *A_A線的橫截面圖。 如圖中所不，將保溫加熱器丨3 〇安裝在沈積腔1 〇 〇内部的上： 面和側面，用於使沈積腔100内的溫度保持恒定。在沈積· 的底表面中設置安裝沈積有機材料的母材料10的母 ^安裴部分140。在母材料安裝單元14〇的上部提供有喷 霧单7C110，用於喷霧氣相有機材料。此外，在沈積腔_ 200304956 五、發明說明（10) —--—1 外表面的下部提供有真空泵150，用於將沈積腔1〇 為高真空狀態。 在輔助腔300内的下部提供有有機材料腔2〇〇，用於蒸發有 機材料。將氣相有機材料攜帶管2丨〇連接到有機材料腔2〇〇 ^上部，用於從有機材料腔2〇〇攜帶氣相有機材料到喷霧 單元110。在有機材料腔2〇〇和氣相有機材料攜帶管21〇之 間提供有攜帶單元314，用於控制喷霧單元11〇的移動。此 外，輔助腔300用於向有機材料腔2〇〇内輸入惰性氣體，在入 該腔的外部提供流量控制器，用於控制惰性氣體的輸入 ' 量。輸入有機材料腔200的惰性氣體起作為氣相有機材料 的移動介質的作用。因此，可以精細控制氣相有機材料的 攜帶量’和均勻分佈氣相有機材料。 圖2C是沿根據本發明圖2A中的B —b線的橫截面圖。 如圖中所示，與喷霧單元110配合的導板112與用於導引喷 · 霧單元110移動方向的導軌丨20滑動配合。用於在其中安裝 · 母材料ίο的母材料安裝單元140包括使用電磁體142的電磁 體移動s又備’用於貫現水平方向的精細移動。 可以根據專利π使用電磁體製造電致發光器件的沈積設備 和使用該ex備的沈積方法（韓國專利申請Ν〇·ι〇 一 2〇〇ι_ 0077739 )&quot;的技術實施用於母材料安裝單元14〇的電磁體移· 動設備。因此並不限制該設備。此外，可以採用常規移動 設備而不使用電磁體移動設備。 根據導軌120調節喷霧單元110的位置，和使用電磁體移動 設備調節母材料安裝單元140的位置，可以更精確地佈置Page 13 200304956 V. Description of the invention (9) a &quot; for sliding movement of the guide spray unit 110; a guide support plate 1 2 2 for fixing and supporting the guide rail 120; and at least one or more insulation heaters 丨30, which is used to keep the inside of the deposition chamber 1000 at a certain temperature by radiating heat to the outside. The organic material cavity 2 0 has a structure in which the organic material is evaporated by heating the organic material stored in the interior, has a tubular shape, and is connected to a gas phase organic material carrying tube 210, which is deposited by deposition The cavity 100 is connected to the spray unit 110 so as to carry the gas-phase organic material ^ _--- the spray unit 110. w The auxiliary cavity 300 includes: a moving shaft 130 that communicates in a direction parallel to the guide rail 120, and the deposition cavity 100 cooperates with the spraying unit 丨 丨 〇 to move the spraying unit 100 along the guide rail 120; and the moving shaft 130 The moving block 312 that cooperates and moves in a direction parallel to the guide 120 according to the cooperation with the carrying unit 314; and the sealing method f 320, the bellows 322, and the organic material cavity 200, which are located in such a #position ' The gas-phase organic material carrying tube 210 and the moving shaft 130 pass through the deposition 00, and are used to buffer the vacuum difference between the high vacuum state of the deposition chamber and the lower two chamber or standby state of the auxiliary chamber 300, and to separate these substances so Connect the two upper chambers. 1 FIG. 2B is a cross-sectional view along the line 2A * A_A according to the present invention. As shown in the figure, the heat preservation heater 300 is installed on the inside of the sedimentation chamber 100: the surface and the side for keeping the temperature in the deposition chamber 100 constant. A mother substrate 140 on which a mother material 10 for depositing an organic material is mounted is disposed in the bottom surface of the sunken product. A spray sheet 7C110 is provided on the upper part of the parent material mounting unit 14o, for spraying organic materials in the gas phase. In addition, a vacuum pump 150 is provided at the lower part of the outer surface of the sink chamber _ 200304956 V. Description of the invention (10) ---- 1 The high-vacuum state of the deposition chamber 10 is provided. An organic material cavity 200 is provided in the lower part of the auxiliary cavity 300 for evaporating organic materials. The gas-phase organic material carrying tube 20 is connected to the upper part of the organic material cavity 2000, and is used to carry the gas-phase organic material from the organic material cavity 200 to the spray unit 110. A carrying unit 314 is provided between the organic material cavity 200 and the gas-phase organic material carrying pipe 21o, for controlling the movement of the spray unit 110. In addition, the auxiliary chamber 300 is used to input an inert gas into the organic material chamber 200, and a flow controller is provided outside the chamber to control the input amount of the inert gas. The inert gas introduced into the organic material cavity 200 functions as a moving medium of the gas-phase organic material. Therefore, it is possible to finely control the carrying amount of the vapor-phase organic material 'and uniformly distribute the vapor-phase organic material. Fig. 2C is a cross-sectional view taken along line B-b in Fig. 2A according to the present invention. As shown in the figure, the guide plate 112 that cooperates with the spraying unit 110 slide-fits with the guide rail 20 for guiding the moving direction of the spraying and misting unit 110. The mother material mounting unit 140 for mounting the mother material therein includes an electromagnet movement s using an electromagnet 142 and is used for fine movement in the horizontal direction. A deposition device for manufacturing an electroluminescent device using an electromagnet according to the patent π and a deposition method using the ex equipment (Korean Patent Application No. 〇〇〇〇〇〇２〇〇ι_ 0077739) &quot; technology implementation for the parent material mounting unit 14o electromagnet movement equipment. Therefore, the device is not restricted. In addition, conventional mobile devices can be used instead of electromagnet mobile devices. Adjusting the position of the spray unit 110 according to the guide rail 120 and adjusting the position of the base material mounting unit 140 using an electromagnet moving device can be more accurately arranged

第15頁 200304956Page 15 200304956

喷霧單元110和母材料10的位置 機材料喷霧操作。 從而實現精確有效的有Positioning of the spraying unit 110 and the base material 10 The machine material spraying operation. In order to achieve accurate and effective

圖2B的C 圖2D是說明根據本發明 圖0 部分的有機材料腔的視 有機材料腔200由耐熱材料以含有在其中 内空間的密封形狀形成，包括：加 、”：：：的 二/ 攜帶氣相有機材料的載氣流入的索 出的風•相有機材料入口孔224 ;和有機材料加熱用加埶FIG. 2C C FIG. 2D is a view illustrating the organic material cavity 200 of the organic material cavity 200 of FIG. 0 according to the present invention. The organic material cavity 200 is formed of a heat-resistant material in a sealed shape containing an inner space therein, including: plus, "::: two / carrying Wind out of the carrier gas flow of the gas-phase organic material. Phase organic material inlet hole 224; and organic materials for heating.

230，該加熱器圍繞加熱爐22〇的外部，用於加熱有機''材剩 腔的内部到蒸發有機材料的溫度。 ’ 以管子形狀形成並與圖2B的流量控制器4〇〇連接的入口管 240通過有機材料腔200與在加熱爐22〇中形成的載氣入口 孔222連接，使得從流量控制器4〇〇輸入的惰性氣體流入加 熱爐220的内部。 此外，以管子形狀形成並與圖2B的喷霧單元11()連接的氣 相有機材料攜帶管210通過有機材料腔2〇〇與在加熱爐22〇 中形成的載氣出口孔224連接，使得將由加熱用加熱器230 加熱和蒸發的有機材料攜帶到用於喷霧氣相有機材料到母 材料的喷霧單元11 0。 圖3是說明根據本發明的氣相有機材料沈積設備各種操作 類型的視圖。 圖3 A是說明根據本發明移動喷霧單元並喷霧氣相有機材料 的狀態的橫截面圖。230. The heater surrounds the outside of the heating furnace 22 and is used to heat the inside of the organic material remaining cavity to a temperature at which the organic material is evaporated. '' An inlet pipe 240 formed in a tube shape and connected to the flow controller 400 of FIG. 2B is connected to the carrier gas inlet hole 222 formed in the heating furnace 22 through the organic material cavity 200 so that the flow controller 400 The input inert gas flows into the inside of the heating furnace 220. In addition, a gas-phase organic material carrying tube 210 formed in a tube shape and connected to the spray unit 11 () of FIG. 2B is connected to the carrier gas outlet hole 224 formed in the heating furnace 22 through the organic material cavity 200 so that The organic material heated and evaporated by the heating heater 230 is carried to a spraying unit 110 for spraying a gas-phase organic material to a mother material. Fig. 3 is a view illustrating various types of operation of the vapor-phase organic material deposition apparatus according to the present invention. Fig. 3A is a cross-sectional view illustrating a state in which a spray unit is moved and a vapor-phase organic material is sprayed according to the present invention.

第16頁 200304956 五、發明說明（12) 用於喷霧氣相有機材料22的喷霧單元的喷霧口可以製成各 的：便均勾地喷霧氣相有機材料22。圖^是說明如 用嘴頭形狀的喷霧單元進行沈積操作，喷 霧早有夕個直徑更小的喷霧口（未示出 =喷y2固定到某些位置用於喷霧氣相有機材料的情 ί:如問題是氣相有機材料不均勾地喷霧到母材料 * . 不，用於喷霧氣相有機材料22到母材料1 〇上 ，ίίί::1」0沿導軌水平移動並喷霧氣相有機材料 &amp; . I # ’材料22均勻地沈積在母材料10的整個表 =二二沈積在母材料1〇上的氣相有機材料以有至Ϊ 、月況下，在氣相有機材料攜帶管2 混合罐25。’用於在將氣相有機 =有 2二在該，内部包…一個以上的分區，用此於罐 θ /瓜入，a合物罐2 5 0内的至少兩籍以μ 尸 混合後流到混合罐25G的外;;兩種以上的以目有機材料， 圖=說:月；據本發明的如下狀態的橫截面圖：當喷霧單 上含有母材料的母材料安裝單元在水平方==法，其 ίΐ=?平當移喷：單元&quot;〇喷霧氣相有機材料22時。，喷 Π 有機材料22時，含有母材料 早70140水平移動，可以獲得與圖2Α相同的效1材^裝 相有機材料22均句地沈積在母材料1〇 果即將氣 第17頁 200304956 五、發明說明（13) 單元110由導軌移動的操作，其中當 巧^、^ , 用褐帶方法，攜帶方法使用電磁體，僅 付可以精確地控制母材料安裝單元丨4〇的移動。 ί說明根據本“使用喷霧管將氣相有機材料沈積到 母材料上的狀態的視圖。 'Page 16 200304956 V. Description of the invention (12) The spraying port of the spraying unit for spraying the vapor-phase organic material 22 can be made into various types: the vapor-phase organic material 22 is sprayed in a uniform manner. Figure ^ shows that if a nozzle-shaped spray unit is used for the deposition operation, the spray has a spray port with a smaller diameter (not shown = spray y2 is fixed to some positions for spraying organic materials in the vapor phase). Feeling: If the problem is that the gas phase organic material is sprayed unevenly onto the parent material *. No, it is used to spray the gas phase organic material 22 onto the parent material 10, and the length is 1: 1 ″ 0 horizontally moved along the guide rail and sprayed Mist-phase organic materials &amp;. I # 'Material 22 is uniformly deposited on the entire surface of the parent material 10 = two-phase organic materials deposited on the parent material 10 are Material carrying tube 2 mixing tank 25. 'Used in the gas phase organic = there are 2 two in this, the inner package ... more than one partition, used in the tank θ / melon, at least a compound tank 2 5 0 After the two corpses are mixed, they flow to the outside of the mixing tank 25G ;; two or more organic materials with a mesh, Figure = said: month; according to the present invention, the cross-sectional view of the following state: when the spray sheet contains the parent material The installation unit of the parent material is on the horizontal side == method, and its ΐΐ =? When the mobile spraying: unit &quot; 〇 sprays the gas phase organic material 22. When the organic material 22 is sprayed, the parent material containing the parent material is moved horizontally as early as 70,140, and the same effect as that of FIG. 2A can be obtained. The organic material 22 is uniformly deposited on the parent material 1 and the fruit is about to be breathed. Page 17, 200304956 V. Description of the invention (13) The operation of the unit 110 moved by the guide rails, in which the brown belt method and the carrying method use electromagnets, and only the movement of the parent material mounting unit 4o can be accurately controlled. This "view of a state where a vapor-phase organic material is deposited on a parent material using a spray tube. '

t圖中所不’在使用喷霧管的沈積設備中，通過用於均勻 i混合至少兩種以上氣相有機材料的混合罐25〇攜帶入沈 積腔100内部的氣相有機材料22由石英、陶瓷或金屬材料 形成並且有特定的結構，使得形成的有機材料通過直徑為 3〜20mm的喷霧管112沈積到母材料1〇的上表面上。使用喷 霧管112的氣相有機材料沈積設備能夠在高速率下形成平 的有機薄膜。 圖3 D是說明根據本發明當喷霧管旋轉及向上和向下移動時 將氣相有機材料沈積到母材料上的狀態的視圖。In the deposition equipment using a spray tube, the vapor-phase organic material 22 carried into the deposition chamber 100 through a mixing tank 25 for uniformly mixing at least two or more vapor-phase organic materials is made of quartz, The ceramic or metal material is formed and has a specific structure, so that the formed organic material is deposited on the upper surface of the parent material 10 through a spray tube 112 having a diameter of 3 to 20 mm. The vapor-phase organic material deposition apparatus using the spray tube 112 is capable of forming a flat organic thin film at a high rate. Fig. 3D is a view illustrating a state in which a gas-phase organic material is deposited on a mother material when the spray tube is rotated and moved up and down according to the present invention.

如圖3C所示，沈積設備包括安裝在沈積腔1〇〇上部並用於 方疋轉喷霧管112的旋轉電機114，和用於垂直移動喷霧管 112的垂直移動電機116。在以上構造中，喷霧管112旋轉 及向上和向下移動的同時在母材料1〇上表面上喷霧氣相有 機材料22。此外，喷霧管11 2可以具有階梯形的彎曲部 分’使得當喷霧管由旋轉電機114旋轉時，其喷霧氣相有 機材料22的喷霧管112的一端能以環形移動。 在此實施方式中，由於通過旋轉電機14和垂直移動電機 116可以自由調節喷霧管112的位置，圖3C的沈積設備可以As shown in FIG. 3C, the deposition apparatus includes a rotary motor 114 installed on the upper part of the sedimentation chamber 100 and used for the square-turn spray tube 112, and a vertical moving motor 116 for vertically moving the spray tube 112. In the above configuration, the spraying pipe 112 is rotated and moved up and down while spraying the vapor-phase organic material 22 on the upper surface of the base material 10. In addition, the spray tube 112 may have a stepped curved portion 'so that when the spray tube is rotated by the rotary motor 114, one end of the spray tube 112 that sprays the vapor-phase organic material 22 can move in a ring shape. In this embodiment, since the position of the spray tube 112 can be freely adjusted by the rotary motor 14 and the vertical moving motor 116, the deposition apparatus of FIG. 3C can

第18頁 200304956 五、發明說明（14) 均勻地喷霧氣相有機材料。 圖4是說明載氣與通過加熱 混合的過程的圖。 ”、、 科獲得的氣相有機材料 圖4A是說明根據本發明在加熱爐的人” 和載氣的狀態的圖。 P /吧δ乱相有機材料 如圖4Α所示，在加熱爐22〇内部 孰考2 3 ί) κ丄 夂’機材料加熱用力jj 氣、二入，入材料2〇與沿入口管240流入的載 既犯合，入口官與加熱爐22〇的内部連接。舍以 的載 式將氣相有機材料和載氣混合時， w / 同時與載氣混合…使混合更加容易：：：科破蒸發的 本發明在加熱爐的外部混合氣相有機材料 和載氣的狀態的圖。 1竹 =圖中所示，以一定的方式構造混合設備使得載氣入口管 240與位於氣相有機材料腔2〇〇外部的氣相有機材料攜帶管 210連接。將由氣相有機材料加熱用加熱器23〇加埶和蒗發 的氣相有機材料20沿氣相有機材料攜帶管21〇攜帶並與通X 過與氣相有機材料攜帶管210連接的載氣入口管24〇流入的 $氣混合。由於這樣構造的混合設備並不含有用於配合載 氣入口管240到加熱爐220和有機材料腔2〇〇的附加結構 可以更容易製造該系統。 圖5是說明根據本發明的加熱爐和氣相有機材料出口孔的 各種構造的圖。 圖5Α是說明根據本發明的長方體加熱爐的圖，該加熱爐在 上端部具有一個氣相有機材料出口孔。 200304956 五、發明說明（15) 如圖中所示，長方體形狀加埶 — :熱f2°内部的有機材料的有機材料加ί二由用於加熱 %，在該加熱爐上部提供有用於…用加熱器230圍 有機材料出口孔222。 、 ； 有機材料的氣相 f?是說明根據本發明的長方體加熱爐的圖，， 上4具有多個氣相有機材料出口孔。 該加熱爐在 排出大量氣相有機材料用於 逮率下將氣相有機材料沈積到母材料上。1長二其中在高 是不能通過在加熱爐上部中 卩，存在的問題 孔222而排出大量氣相有機材料。為克服^相有機材料出口 5B所示，在加熱爐上部提供多個相上問題，如圖 圖5C是說明根據本發明的圓 、J機材料出口孔222 上端部具有一個氣相有機材料出口^爐的圖’該加熱爐在 為在加熱爐220内部更有效地蒸發 以製成各種形狀。在以長方體、开 '，加熱爐22〇可 下，由於圍繞加熱爐220的有機材狀料m熱爐220的情況 的埶晉术抝a以你6 , 機材科熱用加熱器230產生 ：不句勻地傳遞到加熱爐22〇的外表面 1。因此，不能精確地調節產生的氣相有機 董如圖 5C所不，加熱爐22〇形成圓柱形形狀使得在 中產生的熱量均句地傳遞到加熱爐22°的外 ί:機:以通過改變加熱爐220的構造有效地使用 加熱器230中產生的熱量和容易地調節氣 :的產量。此外’加熱爐220並不限於長方體和 圓柱形形狀。即，加熱爐22。可採用多邊六面體和球形形 第20頁 200304956Page 18 200304956 V. Description of the invention (14) Spray the organic material in the gas phase uniformly. Fig. 4 is a diagram illustrating a process of mixing a carrier gas with heating. Gas phase organic material obtained by the branch Fig. 4A is a diagram illustrating a state of a person in a heating furnace and a carrier gas according to the present invention. As shown in FIG. 4A, the organic material of the δ phase disorder is examined inside the heating furnace 22. 2 3) κ 丄 夂 ′ machine material heating force jj gas, two inlets, inlet materials 20 and inflow along the inlet pipe 240 The loader was incompatible, and the entrance officer was connected to the interior of the heating furnace 22o. When the rounded carrier type is used to mix the gas phase organic material and the carrier gas, w / is mixed with the carrier gas at the same time ... to make mixing easier :: The invention of Kebo evaporation mixes the gas phase organic material and the carrier gas outside the heating furnace State diagram. 1 Bamboo = As shown in the figure, the mixing device is constructed in a manner such that the carrier gas inlet pipe 240 is connected to the gas phase organic material carrying pipe 210 located outside the gas phase organic material cavity 2000. Carrier gas inlets for heating the gas-phase organic material heating heater 230 and the gas-phase organic material 20 along the gas-phase organic material carrying pipe 21 are connected to the carrier gas inlet through the gas-phase organic material carrying pipe 210. Tube 24 mixes the inflow of $ gas. Since the mixing device thus constructed does not contain an additional structure for fitting the carrier gas inlet pipe 240 to the heating furnace 220 and the organic material chamber 200, the system can be manufactured more easily. Fig. 5 is a diagram illustrating various configurations of a heating furnace and a gas-phase organic material outlet hole according to the present invention. Fig. 5A is a diagram illustrating a rectangular parallelepiped heating furnace having a gas-phase organic material outlet hole at an upper end portion according to the present invention. 200304956 V. Description of the invention (15) As shown in the figure, the shape of the rectangular parallelepiped is added with: heat f2 ° The organic material inside the organic material plus two is used for heating%, and the upper part of the heating furnace is provided with ... The device 230 surrounds the organic material outlet hole 222. The gas phase f? Of the organic material is a diagram illustrating a cuboid heating furnace according to the present invention, and the upper 4 has a plurality of gas phase organic material outlet holes. The heating furnace discharges a large amount of gas-phase organic materials for catching and deposits the gas-phase organic materials on the mother material. 1 long two of which in the high can not pass through the upper part of the heating furnace, there are problems with holes 222 to discharge a large amount of gas phase organic materials. In order to overcome the ^ phase organic material outlet 5B, a plurality of phases are provided on the upper part of the heating furnace. As shown in FIG. 5C, the upper end of the circular and J machine material outlet hole 222 according to the present invention has a gas phase organic material outlet Diagram of the furnace The heating furnace is more effectively evaporated inside the heating furnace 220 to be formed into various shapes. In the case of a rectangular parallelepiped, the heating furnace 22 can be used. Because of the organic material surrounding the heating furnace 220 and the heating furnace 220, the heating method 220a is generated by the heating heater 230 for the equipment department: The sentences are evenly transmitted to the outer surface 1 of the heating furnace 22o. Therefore, it is impossible to precisely adjust the generated organic gas phase as shown in FIG. 5C. The heating furnace 22 is formed into a cylindrical shape so that the heat generated therein is transferred to the outside of the heating furnace 22 °. The configuration of 220 effectively uses the heat generated in the heater 230 and easily regulates the output of gas. The 'heating furnace 220' is not limited to a rectangular parallelepiped and a cylindrical shape. That is, the heating furnace 22. Polyhedral hexahedron and spherical shapes are available Page 20 200304956

錄加熱爐名 圖5D是說明根據本發明的圓柱形加熱爐 上端部具有多個氣相有機材料出口 ^。、回 為從圖5C所示的加熱爐220排出大量氣相 圖5B相同的方式在加熱爐22 上：：,，可以 材料出口孔。 上^供夕個軋相有機 圖6疋說明根據本發明的在氣相有 固定溫度加熱器的圖。 錢材枓攜帶管外部中的Recording the name of the heating furnace Figure 5D illustrates that the upper end portion of the cylindrical heating furnace according to the present invention has a plurality of gas phase organic material outlets. To return a large amount of gaseous phase from the heating furnace 220 shown in FIG. 5C, the heating furnace 22 is shown in the same manner in FIG. 5B ::, and the material outlet hole can be used. Fig. 6 (a) illustrates a diagram of a fixed temperature heater in a gas phase according to the present invention. Qian Caiyu carrying tube in the outside

爐，的氣相有機材料通過氣相有機材料攜 :二21。輸送時，當將氣相有機材料搞帶管21〇與外材二攜 i0 ^ ^ ^ 也冷部机入軋相有機材料攜帶管210的氣 相有機材料。在此情況下，當將二虱 合適溫度的竿⑯溫产_，力#有冑材枓冷部到低於 私一= 度冑在母材料上的沈積變差。如圖6 =，.·、、克服以上問題，在氣相有機材料攜帶管2丨〇的外 j β供有固疋溫度加熱器260，該加熱器含有用於產生埶 置的加熱絲262，能精確地保持和調節加熱溫度。 … 此外，可以在有機材料腔22〇内提供固定溫度加熱器26〇， 用於使有機材料腔2〇〇的溫度保持恒定。Furnace, gas phase organic materials are carried through gas phase organic materials: 2:21. When transporting, the gas-phase organic material is brought into the tube 21 and the outer material II is carried by the gas phase organic material into the rolled organic material carrying tube 210 in the cold-phase machine. In this case, when the temperature of the larvae at the proper temperature is reduced, the force # has the cold part of the wood material to a temperature lower than the private temperature = degree, and the deposition on the parent material becomes worse. As shown in FIG. 6..., To overcome the above problems, a solid-state temperature heater 260 is provided on the outer j β of the gas-phase organic material carrying tube 2 丨, and the heater contains a heating wire 262 for generating a set, Can accurately maintain and adjust the heating temperature. … In addition, a fixed temperature heater 26 can be provided in the organic material cavity 22 to keep the temperature of the organic material cavity 200 constant.

〈第一貫施方式〉 參考圖7描述有機半導體設備的製造設備和該設備的製造 方法’該方法可使用當根據本發明第二實施方式製造有機 半導體時使用的寬面積基材。 在圖7的有機半導體系統中，本發明第二實施方式的寬面 積基材的氣相有機材料沈積設備7〇〇包括：用於在其中儲<First Embodiment> A manufacturing apparatus for an organic semiconductor device and a manufacturing method for the same will be described with reference to FIG. 7. This method can use a wide-area substrate used when manufacturing an organic semiconductor according to a second embodiment of the present invention. In the organic semiconductor system of FIG. 7, a vapor-phase organic material deposition apparatus 700 for a wide area substrate according to a second embodiment of the present invention includes:

第21頁 200304956 五、發明說明（17) 備惰性氣體的儲氣槽701 ;安裝在儲氣槽701和MFC(質量流 置控制器）7 0 2之間’用於加熱惰性氣體的氣體加熱器 703 ;安裝在加熱器管706内部的連接管707 ;至少一個沈 積源罐71 4，沈積源罐内具有沈積的氣體和有機材料；含 有用於檢查和調節沈積氣體流動的沈積速率調節單元715 的掃描頭709 ;緩衝腔711 ;用於閘控沈積氣體流動並開啟 和關閉沈積氣體的閘閥711 ;和用於將從至少一個沈積源 罐714流入的氣體沈積到寬面積基材712的沈積腔了13。Page 21 200304956 V. Description of the invention (17) Gas storage tank 701 with inert gas; installed between gas storage tank 701 and MFC (mass flow controller) 7 0 2 'gas heater for heating inert gas 703; a connecting pipe 707 installed inside the heater tube 706; at least one deposition source tank 714, which has deposition gas and organic materials in the deposition source tank; a deposition rate adjustment unit 715 for checking and regulating the flow of the deposition gas; Scan head 709; buffer chamber 711; gate valve 711 for gated deposition gas flow and opening and closing of the deposition gas; and deposition chamber for depositing gas flowing from at least one deposition source tank 714 onto a wide-area substrate 712 13.

如圖7所示，儲氣槽701可貯存惰性氣體如Ar，He，N2等和 氧氣，用於常規CVD和非***性的各種氣體。調節氣體 量’氣體通過MFC702流入熱沈積源罐714的内部。將流入 的該氣體使用氣體加熱器703加熱到200〜600。C的高溫，然 後流入熱源内部。 在本發明中’將有機材料粒子和高溫氣體共存的狀態，即 固體和氣體的非均勻狀態假定為固氣多相（SGHp);將稀釋 狀態的材料假定為SGHP的材料。此外，在沈積源罐714内 $的有機材料，例如，有機材料由某些材料如Alq3稀釋並 子在於沈積源罐714的内部。惰性SGHp的材料由沈積源罐 714中的熱源加熱，沈積源罐714内部尚SGHp由通常的電流 ^ H熱4用於產生大1氣相有機材料。此外，使用在沈 原罐714之間的廢差’通過有機半導體沈積 713 W Ϊ接 將有機半導體的別肝材料輸人沈積腔 防止乳相有機材料在連接管m内部積累。特別地，當使As shown in Fig. 7, the gas storage tank 701 can store inert gases such as Ar, He, N2, etc. and oxygen, and is used for conventional CVD and various non-explosive gases. The adjusted gas amount 'gas flows into the interior of the thermal deposition source tank 714 through the MFC702. The inflowing gas is heated to 200 to 600 using a gas heater 703. The high temperature of C then flows into the heat source. In the present invention, a state in which organic material particles and high temperature gas coexist, that is, a non-uniform state of solids and gases is assumed to be a solid-gas multiphase (SGHp); a material in a diluted state is assumed to be a SGHP material. In addition, the organic material in the sedimentary source tank 714, for example, the organic material is diluted with some materials such as Alq3 and is located inside the deposition source tank 714. The material of the inert SGHp is heated by the heat source in the sedimentary source tank 714, and the internal SGHp of the deposition source tank 714 is generated by a normal current ^ H heat4 to generate a large-phase gas phase organic material. In addition, the waste difference between the Shenyuan tank 714 and the organic semiconductor deposition 713 W is used to transfer the other liver material of the organic semiconductor into the deposition chamber to prevent the milk phase organic material from accumulating inside the connection pipe m. In particular, when using

第22頁 200304956 五、發明說明（18) 用AU3時，優選將它加熱到32〇。c 為防止連接管707的熱 在以上加熱工藝中， 度梯度。此外，伴捭、、、、表 7 &amp;用于保持恒定的溫 接管m的溫度接/^7中的真空狀態’以保持連 通過改進能夠貯存大外:/:下類型的方法中，由於 陰影，可以#用厘μ ΐ材料的沈積源罐而消除由於掩模的 ^ ^ J以使用厚的蔭罩。即，可以何供叼 分的排列誤差而實現長時間工蓺。。降低蔭罩排列部 材712的上部。此時，根據與連接㈣7 = 熱掃描棚用於防止氣相有機材二法積使7 /頭7^9 Λ頭7〇9中基材中不進行沈積工藝的情況下，掃 ίΓ= 腔710。此外，完全分離緩衝腔710和 積胪7”肉邱以防止在基材中掃描頭7〇9的熱源更寬和在沈 積腔713内部的溫度增加。 當掃描頭709位於緩衝腔71〇中時，使用緩衝腔71()内的監 視器的B曰體感測器715調節和穩定從掃描頭7〇9喷霧的氣相 有機材料的量。實際上’厚度測量系統並不存在於沈積腔 内。根據處理時間進行處理過程中厚度的調節。 圖8是說明多個沈積源罐和掃描頭的視圖，掃描頭能夠有 效處理圖7系統内部的SGHP有機材料。 如圖中所不，第一 ’第二和第三沈積源罐74][，742和743 通過與罐和第一，第二和第三掃描頭791，792和793連接 的第一，第二和第三連接管771，772和773提供大量有機 材料。此外，在緩衝腔中，以一定的方式提供輔助加熱爐 200304956 五、發明說明（19) 7 4 5使得當掃描頭 圖9是根據本發；=，收集和再迴圈有機材料。 =掃描頭的操作月方的法在二積圖腔内部能夠攜⑽肝有機材料 ί圖1:::機ί 1吏用根據本發明掃描頭709的沈積方法 *产山迎有機材料自身由hrac泵714的層流泵送择柞、隹/ 據閘閥71的開啟和關閉”移動。因此，根 提供泵送口 732 H、 订沈積。由於在基材的下部 可以實現在寬面籍其？ 有機材料的流動，使得 产。因此Ϊ 沈積的有機材料薄膜的均勻厚 ί有任何^於在L，L，，L，’和L，’’箭頭方向中的沈積中 又有，饤彳貝失，可以顯著地增加材料的效率。 m t圖8系統内部能夠攜帶SGHP有機材料的掃描頭的 ，方法的視圖。使用電機717使得柱塞杆 之間往復而實現圖10沈積工藝中掃描頭 ;二39基：的尺寸確定使用電機717的掃描頭719長 頭巧縱向移動長度。此外’掃描頭通過流量調 即早TC716調卽氣相有機材料的產量。 Γϋϊ釋根據本發明有機半導體設備的氣相有機材料產 生万法的圖。Page 22 200304956 V. Description of the invention (18) When using AU3, it is preferably heated to 32 °. c To prevent the heat of the connecting pipe 707 In the above heating process, the degree gradient. In addition, the companion, ,,, and table 7 &amp; for maintaining a constant temperature of the temperature of the vacuum connection m in the vacuum connection / ^ 7 'to maintain the connection through the improvement can be stored outside the ::: The shadow can be removed by using a centimeter of the material's deposition source tank due to the mask to use a thick shadow mask. In other words, it is possible to realize a long-time operation without any arrangement error. . The upper part of the shadow mask arranging member 712 is lowered. At this time, according to the connection ㈣7 = thermal scanning shed is used to prevent the gas phase organic material from being accumulated so that 7 / head 7 ^ 9 Λhead 709 is not subjected to the deposition process in the substrate, ΓΓ = cavity 710 . In addition, the buffer cavity 710 and the accumulated 7 ”meat are completely separated to prevent the heat source of the scanning head 709 from being wider in the substrate and the temperature inside the deposition cavity 713 from increasing. When the scanning head 709 is located in the buffer cavity 71 ° The body sensor 715 using the monitor in the buffer chamber 71 () adjusts and stabilizes the amount of the vapor-phase organic material sprayed from the scanning head 709. Actually, the 'thickness measurement system does not exist in the deposition chamber The thickness adjustment during the process is based on the processing time. Figure 8 is a view illustrating multiple deposition source tanks and scanning heads, which can effectively process the SGHP organic materials inside the system of Figure 7. As shown in the figure, the first 'Second and third deposition source tanks 74] [, 742 and 743 through first, second and third connection pipes 771, 772 connected to the tank and the first, second and third scanning heads 791, 792 and 793 And 773 provide a large amount of organic materials. In addition, in the buffer chamber, an auxiliary heating furnace is provided in a certain way. 200304956 V. Description of the invention (19) 7 4 5 When the scanning head Figure 9 is according to the present invention; =, collected and returned Circle organic materials. = Scanning head operation method The hepatic organic material can be carried inside the plot cavity. Figure 1 ::: 机 ί 1. The deposition method of the scanning head 709 according to the present invention is used. * The organic material is produced by the laminar pump of the hrac pump 714. / According to the opening and closing of the gate valve 71. Therefore, the root provides a pumping port 732H, which sets the deposit. Because it can be achieved in the wide area under the base? The flow of organic materials makes production. Therefore, the uniform thickness of the deposited organic material thin film is not limited to the deposition in the direction of the L, L, L, ', and L,' 'arrows, and it can significantly increase the efficiency of the material. . m t Figure 8 is a view of a scanning head capable of carrying SGHP organic materials inside the system. The motor 717 is used to reciprocate the plunger rod to realize the scanning head in the deposition process of Fig. 10; the size of the second 39 bases determines the length of the scanning head 719 using the motor 717 and the length of the head. In addition, the 'scanning head' adjusts the output of gas-phase organic materials by early TC716. Γ Explains a method for generating a gas phase organic material of an organic semiconductor device according to the present invention.

如圖中所示，提供了沈積源罐714，外部熱源加赦器， 沈積源罐714中的有機材料粒子752，沈積源罐m中的古 溫氣體753，貯存在沈積源罐714内部的有機材料间 = 755。在根據本發明有機半導體設備的氣相有機材料别 產生方法中，當產生氣相有機材料時，由於用於有機半導 州4956 五、發明說明（20) 材料的t熱導率較低’當使用通常電池類型埶源時，右機 材枓的蒸發困•，並且由於敎 ；時，有機 罐中的有機材料可能劣化，、。里集中於某些部分’沈積源 圖所示’通過氣體入口管755將其、、®名&lt;§*〇* 罐714，在有機；^枓太I 將同，皿軋體噴入沈積源 有機材料因此H在沈積源罐714内部稀釋氣體和 源罐714中二Λ 粒子752和高溫氣體753在沈積 埶器751^ Γ ΐ接在沈積源罐714外部的熱源加 …、荔hi增加沈積源罐714的溫度。 在基於對流法的加献部分Φ 用故傳導m :: 處共存狀4的稀釋部分使 :了法相比更低的熱源外部溫度下產生大量的氣相有機材 明根據本發明的基於圖U的方法產生氣相有機材 =積腔内部的沈積方法的視圖。描述㈣氣相有機材 二'/積和攜帶方&amp;。如上所述，彳以在沈積源罐川内 部產生大量氣相有機材料。因此，在沈積腔713内部真空 壓力和沈積源罐714内部真空壓力的差異大於1〇〇倍。例 如:如果系統的真空度為1〇 —4托，使得沈積源罐714的壓 力疋1 〇-1托以形成一定的壓差，可以在沈積源罐714内部 的沈積腔中誘增氣相有機材料。此外，將連接管加熱到高 溫=使氣相有機材料不沈積。在圖12的沈積腔中，描述包 括掃，頭761和基材762的掃描方法。將由圖丨2掃描方法誘 導的氣相有機材料實際沈積到基材上。然而，氣相有機材 料並不同時沈積在寬面積基材上。如圖12所示，如同在基As shown in the figure, there are provided a deposition source tank 714, an external heat source amnester, organic material particles 752 in the deposition source tank 714, an ancient temperature gas 753 in the deposition source tank m, and an organic stored in the sedimentary source tank 714 Between materials = 755. In the method for producing a vapor-phase organic material of an organic semiconductor device according to the present invention, when a vapor-phase organic material is produced, it is used in organic semiconductors 4956. V. Description of the invention (20) The thermal conductivity of the material is low. When using normal battery type 埶 source, the evaporation of the right material 困 is difficult, and because of 敎, the organic materials in the organic can may be deteriorated. It is focused on some parts 'as shown in the deposition source diagram' through the gas inlet pipe 755, and its name &lt; § * 〇 * tank 714, in organic; ^ 枓 太 I will be the same, the dish rolling body is sprayed into the deposition source Organic materials therefore H are diluted inside the sedimentary source tank 714 and the two Λ particles 752 and high temperature gas 753 in the source tank 714 are deposited in the sinker vessel 751 ^ Γ ΐ The heat source connected outside the sinker source tank 714 is added, and li hi increases the deposition source The temperature of the tank 714. In the addition part based on the convection method Φ, the dilution part of the coexistence state 4 at the conduction m :: causes the method to generate a large amount of gas-phase organic materials at a lower external temperature than the heat source. The method produces a view of the vapor phase organic material = deposition method inside the cavity. Describe the gas phase organic materials II '/ product and carrier &amp;. As described above, a large amount of gas-phase organic materials are produced inside the Shenchuanyuanchuan. Therefore, the difference between the vacuum pressure inside the sink chamber 713 and the vacuum pressure inside the sink tank 714 is greater than 100 times. For example: if the vacuum of the system is 10-4 Torr, so that the pressure of the deposition source tank 714 is 〇1 to 1 Torr to form a certain pressure difference, the gas phase organic can be induced in the deposition cavity inside the sedimentary source tank 714 material. In addition, the connection tube is heated to a high temperature = so that the vapor-phase organic material is not deposited. In the deposition chamber of FIG. 12, a scanning method including a scan, a head 761, and a substrate 762 is described. The vapor-phase organic material induced by the scanning method in FIG. 2 is actually deposited on the substrate. However, vapor-phase organic materials are not simultaneously deposited on a wide area substrate. As shown in Figure 12, as in

第25頁 200304956 五、發明說明（21) 材某些部分上進行沈積那樣進行在寬面積基材上的沈積過 程，根據掃描頭709的移動在恒定速度下移動掃描頭7〇9。 圖1 3是操作沈積設備的流程圖。在沈積設備中，將基材 712裝入沈積腔710中（S710)。預熱沈積源罐714，並將 200 °C-600 °C的高溫氣體輸入沈積源罐714(S712)。此外， 將沈積源罐71 4内部的南溫氣體和有機材料粒子混合，以 形成混合物。當增加沈積源罐714的溫度時，產生SGHp材 料（S714)。通過連接管707將產生的大量SGHP材料從沈積 ’， 源罐714攜帶到緩衝腔7HKS716)。在此時，在緩衝腔71〇 ' 中，使用氣相有機材料感測器測量氣相有機材料的流量。丨% 當氣相有機材料的流量達到設定量時，開啟緩衝問^ (S718)。根據知描頭709的操作進行氣相有機材料的沈積 工藝（S720 )。在經過設定的沈積時間之後，移動掃描頭、 709 (S722 )，關閉緩衝閘閥711，卸載基材（3724)。田 下面根據試驗結果描述根據本發明的寬面積基材的氣相有 機材料沈積設備和方法。 ' 根據使用圖1 3設備的試驗，根據如下條件描述圖7，} 〇， 15和16 :使用的材料：Alq3 ;基材尺寸：37〇 χ 47〇mm •，使 用的氣體：Ar( 340 °C);沈積源罐溫度：300 ;沈積罐 均勻性：± 5%。 μ ™ 圖14是根據本發明的稀釋氣體的溫度與沈積量的相對關係， 圖；圖15是根據本發明的相對於稀釋氣體量的氣相有機材 料的圖；圖1 6是在僅加熱沈積源罐而沒有根據本發明稀釋 氣體的情況下，沈積源罐溫度與沈積量的關係圖。Page 25 200304956 V. Description of the invention (21) The deposition process on a wide-area substrate is performed on some parts of the material as described above. The scanning head 709 is moved at a constant speed according to the movement of the scanning head 709. FIG. 13 is a flowchart of operating the deposition apparatus. In the deposition apparatus, the substrate 712 is loaded into the deposition chamber 710 (S710). The deposition source tank 714 is preheated, and a high-temperature gas of 200 ° C-600 ° C is input to the deposition source tank 714 (S712). In addition, the South temperature gas inside the deposition source tank 71 4 and the organic material particles are mixed to form a mixture. When the temperature of the deposition source tank 714 is increased, a SGHp material is generated (S714). A large amount of SGHP material generated is deposited from the connection tube 707, and the source tank 714 is carried to the buffer cavity 7HKS716). At this time, in the buffer cavity 710 ′, the flow rate of the gas phase organic material is measured using a gas phase organic material sensor.丨% When the flow rate of the gas-phase organic material reaches the set amount, the buffering question is turned on (S718). A vapor-phase organic material deposition process is performed according to the operation of the scanning head 709 (S720). After the set deposition time has elapsed, the scan head is moved, 709 (S722), the buffer gate valve 711 is closed, and the substrate is unloaded (3724). The following describes a vapor-phase organic material deposition apparatus and method for a wide-area substrate according to the present invention based on test results. 'According to the test using the device of Figure 13 and Figure 7 according to the following conditions, 〇 〇, 15 and 16: Materials used: Alq3; substrate size: 37〇χ 47〇mm • Gas used: Ar (340 ° C); Deposition source tank temperature: 300; Deposition tank uniformity: ± 5%. μ ™ FIG. 14 is a graph showing the relative relationship between the temperature of the diluent gas and the deposition amount according to the present invention; FIG. 15 is a graph of the gas phase organic material with respect to the amount of the diluent gas according to the present invention; A graph of the relationship between the temperature of the deposition source tank and the amount of sediment when the source tank is not diluted according to the present invention.

200304956 五、發明說明（22) :圖=示:所檢”稀釋，溫度對沈積量沒有任何影 二邱吖叩沾-:自稀釋氣體的量增加時，沈積源罐714 从為旦以 乱^有機材枓的1隨著沈積源罐71 4 有機材料的量。此外：二頭709產生的氣相 ,^ ^ ^ Γ戈園1b所不，在加熱沈積源罐714 自土的情況下，檢查表明有少量氣態有機材料產生。 之’如圖13，14 ’ 15和16所示，在沒有稀釋氣體的情 曰匕於常規沈積源罐714的方法，其中氣相有機材200304956 V. Description of the invention (22): Picture = Show: "Detection", the temperature has no effect on the amount of sediment. Qiu Aiqiang-: When the amount of self-diluting gas increases, the deposition source tank 714 will be confused ^ Organic material 枓 1 is the amount of organic material with the deposition source tank 71 4. In addition: the gas phase produced by the second head 709, ^ ^ ^ Γ Ge Yuan 1b, when the deposition source tank 714 is heated from the soil, check It is shown that a small amount of gaseous organic materials are generated. As shown in Figs. 13, 14, 15 and 16, in the case of no diluent gas, the conventional deposition source tank 714 is used, in which the gas phase organic materials

； 生里較小，隨著稀釋氣體的輸入，使沈積源罐71 4 内部的SGHP的量增加。此外，根據常規的電流原理，在沈 積源罐71 4内部SGHP將產生大量氣相有機材料。 因此，由於使用閘閥711完全分隔緩衝腔71〇和沈積腔 713，可以防止基材中，其中掃描頭7〇9的熱源更寬，和沈 積腔7,13内部的溫度增加。此外，增加有機薄膜相對於基 材的粘合力，可以精確和穩定地調節厚度到通常厚度。可 以貯存大量材料。 如上所述，在根據本發明的氣相有機材料沈積方法和使用 該方法的氣相有機材料沈積設備中，可以均勻地在寬面積 基材上沈積氣相有機材料和快速生長膜。此外，可以實現. 有機材料混合量的精細調節。此外，由於僅將氣相有機材 : · 料喷霧到其上沈積氡相有機材料的部分上，可以有效地沈 積氣相有機材料。可以在本發明中節省有機材料。 此外，在根據本發明的氣相有機材料沈積方法和使用該方 法的氣相有機材料沈積設備中，可以通過在沈積源罐内部; The living area is small, and the amount of SGHP inside the deposition source tank 71 4 increases with the input of the dilution gas. In addition, in accordance with the conventional current principle, a large amount of vapor-phase organic materials will be generated in the SGHP inside the deposition source tank 71 4. Therefore, by using the gate valve 711 to completely separate the buffer chamber 71 and the deposition chamber 713, it is possible to prevent the substrate, in which the heat source of the scanning head 709 is wider, and the temperature inside the deposition chambers 7,13 is increased. In addition, by increasing the adhesion of the organic film to the substrate, the thickness can be adjusted accurately and stably to the usual thickness. Can store large amounts of material. As described above, in the vapor-phase organic material deposition method and the vapor-phase organic material deposition apparatus using the method according to the present invention, it is possible to uniformly deposit a vapor-phase organic material and a fast-growing film on a wide-area substrate. In addition, fine adjustment of the amount of organic materials can be achieved. In addition, since only the vapor-phase organic material is sprayed onto the portion on which the phase-phase organic material is deposited, the vapor-phase organic material can be efficiently deposited. Organic materials can be saved in the present invention. In addition, in the vapor-phase organic material deposition method and the vapor-phase organic material deposition apparatus using the method according to the present invention,

第27頁 200304956Page 27 200304956

f釋有機材料粒子增加有機薄膜相對於基材的粘人力。并 描頭Ϊ = : =閥完全分隔緩衝腔和沈積腔和“移動掃 小側熱源，可以防止熱源寬面積基材中由於掃描頭 的原因和沈積腔内的溫度增加。此外，在本發明卜由於 :以法中通過採用能夠貯存大量材料的沈積源、 罐’ a除罩的陰影效應，可以使用厚的蔭罩。即，可 服蔭罩排列部分的問題。The f-release organic material particles increase the adhesion of the organic film to the substrate. The tracing head: =: = The valve completely separates the buffer cavity and the sedimentation cavity and the "small side heat source of the mobile sweep", which can prevent the temperature increase in the wide area of the heat source due to the scanning head and the temperature in the sedimentation cavity. In addition, in the present invention, Because in the method, by using a deposition source capable of storing a large amount of material, the shadow effect of the mask can be used, a thick shadow mask can be used, that is, the problem of the arrangement portion of the shadow mask can be solved.

:於本發明可以在幾種形式中實％而不背離其精神或必須 特徵，也應當理解除非另外說明，上述實施例並不由以上 描^的任何詳細情況所限制，而應當由所附申請專利範圍 確定的精神和範圍内廣泛地解釋，因此落入權利要求申請 專利範圍集合和範圍内的所有改變和改進，或該集合和範 圍的同等物也由所附申請專利範圍所包括。 五.圖示簡單說明 參考附圖可更好地理解本發明，附圖僅用於說明的目的， 而不是對本發明的限制，其中； 圖1疋說明傳統的真空沈積設備的一個例子的視圖； 圖2 A疋說明根據本發明的氣相有機材料沈積設備的平面 圖； 圖2B是沿圖2A中A-A線的橫截面圖； 圖2C是沿圖2A中B-B線的平面圖； 圖2D是說明圖2B中部分c的有機材料腔的視圖； 圖3A是說明根據本發明移動喷霧單元並喷霧氣相有機材料: The present invention may be implemented in several forms without departing from its spirit or essential characteristics. It should also be understood that the above embodiments are not limited by any of the details described above, but should be covered by the attached patent, unless otherwise specified The spirit and scope of the scope determination are broadly interpreted, and therefore all changes and improvements that fall within the set and scope of the scope of the claimed patent application, or equivalents of the set and scope are also included in the scope of the attached application patent. V. Brief Description of the Drawings The present invention can be better understood with reference to the accompanying drawings, which are only for the purpose of illustration, but not a limitation of the present invention, in which: FIG. 1 (a) is a view illustrating an example of a conventional vacuum deposition apparatus; 2A is a plan view illustrating a vapor-phase organic material deposition apparatus according to the present invention; FIG. 2B is a cross-sectional view taken along line AA in FIG. 2A; FIG. 2C is a plan view taken along line BB in FIG. 2A; A view of the organic material cavity in the middle part c; FIG. 3A is a diagram illustrating a moving spray unit and a gas phase organic material according to the present invention

第28頁 200304956 五、發明說明（24) 的狀態的橫截面圖； 圖3BJ說明根據本發明的如下狀態的橫 =氣相有機材料時，根據使用電磁體的攜帶霧： 上3，母材料的母材料安裝單元在水平方向上移 - 圖3C是說明根據本發明使用喷霧管將 ^ 母材料上的狀態的橫截面圖； 有機材枓沈積到 =3D是說明根據本發明當喷霧管旋轉及向上和 目有機材料沈積到母材料上的狀態的橫截面；移動時 A疋說明根據本發明在加熱爐的内部混合 和載氣的狀態的橫截面圖； 乳相有機材料 ，4B是說明根據本發明在加熱爐的 和載氣的狀態的橫截面圖； 孔相有機材料 該加 圖5Α是說明根據本發明 該加 熱爐在其上料且ί'方體加熱爐的橫截面圖 圖-是說明= =口孔； 熱爐在其上端部且乂 ί方體加熱爐的橫截面圖 Ε] (- p g 夕個氣相有機材料出口孔； 該加 :爐本發明的圓柱形加熱爐的橫截面圖 圖有—個氣相有機材料出口孔； 該加 熱爐在其上端部具圓柱形加熱爐的橫截面圖 圖6是說明根據本發有二個/相有機材料出口孔； 固定溫度加熱器的橫截的面在園氣相有機材料攜帶管外部中的 Γ的=面根:本發明的寬面積基材氣相有機材料沈積設 第29頁 200304956 五、發明說明（25) 圖8是說明根攄太鉻 圖； &quot;、夕個沈積源罐和掃描頭的橫截面 圖9疋解釋根據本發明的在沈積腔内部 材料的掃描頭的操作方法的視圖；b句攜帶SGHP有機 圖1 0疋解釋根據本發明的在圖8系統 機材料的掃描頭的移動方法的視圖；k夠攜帶SGHP有 圖11是解釋根據本發明的有機 Λ 產生方法的視圖； 體叹備的軋相有機材料 圖12是解釋根據本發明的基於圖u的方Page 28 200304956 V. Cross-sectional view of the state of the invention description (24); FIG. 3BJ illustrates the following state according to the present invention when a gas phase organic material is used according to the invention, according to the use of electromagnets to carry fog: Top 3, of the parent material The parent material installation unit is moved in the horizontal direction-FIG. 3C is a cross-sectional view illustrating a state where the parent material is applied using the spray tube according to the present invention; the organic material is deposited to 3D to illustrate when the spray tube is rotated according to the present invention And the cross section of the state in which the organic material is deposited on the parent material; when moving, A 疋 illustrates the cross-sectional view of the state of mixing and carrier gas in the interior of the heating furnace according to the present invention; A cross-sectional view of the present invention in the state of a heating furnace and a carrier gas; a porous phase organic material; FIG. 5A is a cross-sectional view illustrating a rectangular heating furnace in which the heating furnace is charged according to the present invention. Explanation = = orifice; cross section of the heating furnace at its upper end and a rectangular parallelepiped heating furnace E] (-pg evening gas-phase organic material outlet hole; the plus: the horizontal of the cylindrical heating furnace of the present invention The cross-sectional view has— Gas-phase organic material outlet hole; The heating furnace has a cross-sectional view of a cylindrical heating furnace at its upper end. FIG. 6 illustrates that there are two / phase organic material outlet holes according to the present invention; Γ = face root in the outer portion of the organic gas carrying tube of the circular gas phase: the wide-area substrate gas phase organic material deposition device of the present invention, page 29, 200304956 V. Description of the invention (25) FIG. 8 is a diagram showing the root chromium; &quot; Cross-section of a sediment source tank and a scanning head FIG. 9 (a) illustrates a view of an operation method of a scanning head of a material inside a sedimentation cavity according to the present invention; b sentence carries SGHP organic FIG. 8 is a view of a method of moving a scanning head of a machine material in FIG. 8; k is sufficient to carry SGHP; FIG. 11 is a view explaining a method of generating organic Λ according to the present invention; a rolled organic material is illustrated in FIG. 12 is a view explaining according to the present invention Graph u-based square

料的沈積腔内部的沈積方法的視圖； 乳相有機材 圖1 3是根據本發明的沈積設備操作的流程圖； 圖14是根據本發明的稀釋氣體的 旦 圖； 度興沈積里的相對關係 氣體量的氣相有機材料的 圖1 5是根據本發明的相對於稀釋 圖；和 圖1 6是在僅加熱沈積源罐而沒有根據本發明稀釋氣 況下，沈積源罐溫度與沈積量的關係圖。 、的情 圖式中標號說明 10 :母材料 1 〇 〇 :沈積腔 112 :導板 20 : 110 120 有機材料 :噴霧單元 :導軌View of the deposition method inside the material deposition chamber; milk phase organic material Figure 13 is a flowchart of the operation of the deposition equipment according to the present invention; Figure 14 is a denier diagram of the dilution gas according to the present invention; the relative relationship in Duxing deposition Figure 15 of the gaseous amount of gas-phase organic material is relative to the dilution diagram according to the present invention; and Figure 16 is a graph of the temperature of the deposition source canister and the amount of deposition under the condition that the deposition source canister is heated only without diluting the gas according to the present invention. relation chart. Description of the symbols in the drawing 10: Parent material 1 〇: Deposition chamber 112: Guide plate 20: 110 120 Organic material: Spray unit: Guide rail

122 140 200 導軌支撐板 母材料安裝單元 有機材料腔 130 150 210 保溫加熱器 真空泵 氣相有機材料攜帶管122 140 200 Rail support plate Mother material mounting unit Organic material cavity 130 150 210 Insulation heater Vacuum pump Gas-phase organic material carrying tube

200304956 五、發明說明（26) 220 加 熱 爐 230 :有 機 材 料 加 熱 器 240 載 氣 入 口 管 300 ••輔 助 腔 310 移 動 軸 312 :移 動 塊 314 攜 帶 單 元 320 :密 封 法 蘭 322 波 紋 管 700 :沈 積 腔 701 儲 氣 槽 702 ： MFC( 質 量 流 量 控 制 器 703 氣 體 加 熱 器 706 :加 熱 器 管 707 連 接 管 709 :掃 描 頭 710 緩 衝 腔 711 :閘 閥 712 基 材 713 •沈 積 腔 714 沈 積 源 罐 715 ••沈 積 速 率 調 節 單 元200304956 V. Description of the invention (26) 220 Heating furnace 230: Organic material heater 240 Carrier gas inlet pipe 300 • Auxiliary cavity 310 Moving shaft 312: Moving block 314 Carrying unit 320: Sealing flange 322 Bellows 700: Deposition chamber 701 Gas storage tank 702: MFC (mass flow controller 703, gas heater 706: heater pipe 707, connecting pipe 709: scan head 710, buffer chamber 711: gate valve 712, substrate 713 • deposition chamber 714, deposition source tank 715, • deposition rate adjustment unit

200304956 圖式簡單說明 圖1是說明傳統的真空沈積設備的一個例子的視圖； 圖2 A是說明根據本發明的氣相有機材料沈積設備的平面 圖； 圖2B是沿圖2A中A-A線的橫截面圖； 圖2C是沿圖2A中B-B線的平面圖； 圖2D是說明圖2B中部分C的有機材料腔的視圖； 圖3A是說明根據本發明移動喷霧單元並喷霧氣相有機材料 的狀態的橫截面圖； 圖3B是說明根據本發明的如下狀態的橫截面圖：當嘴霧 元喷霧氣相有機材料時，根據使用電磁體的攜帶方法直 上含有母材料的母材料安裝單元在水平方向上移動\ ’八 圖3C是說明根據本發明使用喷霧管將氣相有機材汰 母材料上的狀態的橫截面圖； 4沈積到 圖3D是說明根據本發明當喷霧管旋轉及向上 將氣相有機材料沈積到母材料上的狀態的橫：：移動時 圖4A是說明根據本發明在加熱爐的内部混 ， 和載氣的狀態的橫截面圖； 乳相有機材料 圖=說明根據本發明在加熱爐的外 和載，的狀態的橫截面圖； 札相有機材料 該加 Ϊ明根據本發明的長方體加熱爐的橫截“ ==上端部具有-個氣相有機材料出：孑：圖 該加 熱爐在其上J = 方艎加熱爐的橫截面圖 圖5C是說明根=有夕個氣相有機材料出口孔； 、取* 16}圖 該加200304956 Brief description of the drawings FIG. 1 is a view illustrating an example of a conventional vacuum deposition apparatus; FIG. 2A is a plan view illustrating a vapor-phase organic material deposition apparatus according to the present invention; FIG. 2B is a cross section taken along line AA in FIG. 2A 2C is a plan view taken along the line BB in FIG. 2A; FIG. 2D is a view illustrating the organic material cavity of part C in FIG. 2B; FIG. 3A is a view illustrating a state in which the spray unit is moved and the organic material in the vapor phase is sprayed according to the present invention 3B is a cross-sectional view illustrating a state according to the present invention: when a mouth mist atom sprays a vapor-phase organic material, a mother material mounting unit containing the mother material is directly mounted in a horizontal direction according to a carrying method using an electromagnet. Figure 3C is a cross-sectional view illustrating the state of a gas phase organic material on a mother material using a spray tube according to the present invention. 4 Deposition to FIG. 3D is a view illustrating when the spray tube rotates and lifts the gas upward according to the present invention. Phase of the state where the organic material is deposited on the parent material :: When moving FIG. 4A is a cross-sectional view illustrating the state of mixing inside the heating furnace and the carrier gas according to the present invention; Material diagram = cross-sectional view illustrating the state of the heating furnace according to the present invention; the phase organic material should be added to the cross section of the cuboid heating furnace according to the present invention "== the upper end has a gas phase Organic materials: 孑: Figure the heating furnace on which J = cross-sectional view of the square 艎 heating furnace Figure 5C illustrates the root = there are gas-phase organic material outlet holes;, take * 16} Figure should be added

據本發明的圓柱形加熱爐的橫截 200304956 圖式簡單說明 熱爐在其上端百 圖5D是說明根墟j 一個氣相有機材料出口孔； 熱爐在其上圓柱形加熱爐的橫截面圖，該加 =說明根據本發明的在氣相有機 孔， 固疋^度加熱器的橫截面圖； 帑Β外中的 圖7疋說明根據本發 備的橫截面圖； 積基材乳相有機材料沈積設 =疋說明根據本發明的多個沈積源罐和掃描頭的橫截面 zir的H根據本發明的在沈積腔内部能夠攜帶如即有機 材料的掃也頭的操作方法的視圖； 圖1 〇是解釋根據本發明的在圖8系統内部能夠攜帶SGHP有 機材料的掃描頭的移動方法的視圖； 圖11是解釋根據本發明的有機半導體設備的氣相有機材料 產生方法的視圖； 圖12是解釋根據本發明的基於圖n的方法產生氣相有機材 料的沈積腔内部的沈積方法的視圖； 圖1 3是根據本發明的沈積設備操作的流程圖； 圖1 4是根據本發明的稀釋氣體的溫度與沈積量的相對關係 圖， 圖15是根據本發明的相對於稀釋氣體量的氣相有機材料的 圖；和 圖1 6是在僅加熱沈積源罐而沒有根據本發明稀釋氣體的情 況下，沈積源罐溫度與沈積量的關係圖。The cross-section of the cylindrical heating furnace according to the present invention is 200304956. The diagram simply illustrates the upper end of the heating furnace. Figure 5D is an illustration of a gas-phase organic material outlet hole in the root market; a cross-sectional view of the cylindrical heating furnace on the heating furnace. This plus = illustrates a cross-sectional view of a solid-phase heater in a gas-phase organic hole according to the present invention; FIG. 7 in the outer section illustrates a cross-sectional view according to the present invention; Material deposition device = 疋 A view illustrating the cross-sections of a plurality of deposition source tanks and scanning heads according to the present invention, zir H, a view of an operating method of a scanning head capable of carrying organic materials such as organic materials in a sedimentation chamber according to the present invention; FIG. 1 〇 is a view explaining a method of moving a scanning head capable of carrying SGHP organic material inside the system of FIG. 8 according to the present invention; FIG. 11 is a view explaining a gas phase organic material generating method of an organic semiconductor device according to the present invention; FIG. 12 is A view explaining a deposition method inside a deposition chamber that generates a vapor-phase organic material based on the method of FIG. N according to the present invention; FIG. 13 is a flowchart showing the operation of a deposition apparatus according to the present invention; According to the graph of the relative relationship between the temperature of the diluent gas and the deposition amount according to the present invention, FIG. 15 is a diagram of the gas-phase organic material relative to the amount of the diluent gas according to the present invention; and FIG. In the case of the dilution gas of the present invention, the relationship diagram between the temperature of the deposition source tank and the amount of sedimentation.

200304956 圖式簡單說明 圖式中標號說明 10 : 母材料 20 ： 有機材料 100 :沈積腔 110 喷霧單元 112 :導板 120 導軌 122 :導軌支撐板 130 保溫加熱器 140 :母材料安裝單元 150 真空泵 200 :有機材料腔 210 氣相有機材料攜帶管 220 :加熱爐 230 有機材料加熱器 240 :載氣入口管 300 輔助腔 310 :移動軸 312 移動塊 314 :攜帶單元 320 密封法蘭 322 :波紋管 700 沈積腔 701 :儲氣槽 702 : MFC(質量流量控制器） 703 :氣體加熱器 706 加熱器管 707 :連接管 709 掃描頭 710 :緩衝腔 711 閘閥 712 :基材 713 沈積腔 714 :沈積源罐 715 沈積速率調節單元200304956 Brief description of the drawing Description of the symbols in the drawing 10: Parent material 20: Organic material 100: Deposition chamber 110 Spray unit 112: Guide plate 120 Rail 122: Rail support plate 130 Insulation heater 140: Parent material installation unit 150 Vacuum pump 200 : Organic material cavity 210 Gas-phase organic material carrying tube 220: Heating furnace 230 Organic material heater 240: Carrier gas inlet tube 300 Auxiliary cavity 310: Moving shaft 312 Moving block 314: Carrying unit 320 Sealing flange 322: Bellows 700 Deposition Chamber 701: Gas storage tank 702: MFC (mass flow controller) 703: Gas heater 706 Heater tube 707: Connection tube 709 Scan head 710: Buffer chamber 711 Gate valve 712: Substrate 713 Deposition chamber 714: Deposition source tank 715 Deposition rate adjustment unit

第34頁Page 34

Claims (1)

六、申請專利範圍 i · 種氣相有機材料沈積設備，包括· 沈積腔’該沈積腔具有··與外部分離的内 空間底表面中形成的用於安裝沈積氣相二^二在内部 的母材料安裝部分，位於母材料 2機材枓的母材料 母材料安裝部分方向上喷霧氣相ϋ/刀上部分並用於在 至少-個以上的向上壁的嘴霧單元’和 熱器； 壁表面輻射熱量的保溫加 以十的有機材料腔’該有機材料 ΠΐΓ二形成的載氣入口孔，攜帶氣相有機材料 的氣相有機材料出口孔，通過；出 力：：熱材料形成並具有用於貯存有機材料的内： 以及有機材料加熱用加熱器，該加熱器圍 ί發^需的溫Ϊ圍部分並將加熱爐的内部加熱到有機材料 量氣入口孔連接並控制流入有機材料腔 2Ϊ機材料攜帶管，其以通過沈積腔和有機材料腔的形 並以管子形狀形成，使得有機材料腔中的氣相有機 材料被攜帶到喷霧單元；和 ，俄 用於降低沈積腔内部壓力的真空泵。 如申明專利$(L圍第1項所述設備，其中所述沈積腔在氣 有機材料攜帶管的縱向方向在裝有喷霧單元的部分中包 200304956 申請專利範圍 上的導轨；所述喷霧單元包括在與導軌接觸 的。p为可與導轨一起滑動的導板。 3包括如:上專第1或2項所述設備，其中所述沈積腔 向移動喷霧單元的移動電機。 社 卜万 4料攜如/Λ專:π範圍第1項所述設備’其中所述氣相有機材 息ϊ帶6匕括固定溫度加熱$ ’該加熱器具有用於產生熱 =熱絲和用於精碟保持加熱溫度的固定溫度熱量輕射^ 夏糸統。 、 地如申請專利範圍第1或4項所述設備，其中所述氣相 料攜帶管包括與至少兩個以上有機材料腔連接的用於 A 5至少兩種以上氣相有機材料的混合罐。Sixth, the scope of patent application i · A vapor-phase organic material deposition equipment, including:-a deposition chamber having a deposition chamber formed in the bottom surface of an inner space separated from the outside, and a substrate for installing the deposition gas phase; Material installation part, which is located in the direction of the parent material installation part of the parent material 2 and the parent material installation part of the parent material. It is used to spray the upper part of the gas phase / knife and is used for at least one or more of the mouth mist unit and the heater on the upward wall; radiant heat on the wall surface Insulation plus ten organic material cavities, the carrier gas inlet hole formed by the organic material ΠΐΓ, the gas phase organic material outlet hole carrying the gas phase organic material, passed; output :: formed by thermal material and has Inside: and a heater for heating organic materials, the heater surrounds the required temperature and heats the interior of the heating furnace to the organic material gas inlet hole to connect and control the flow of organic material into the organic material cavity, and the material carrying tube. It is formed in a shape that passes through the deposition cavity and the organic material cavity and is formed in a tube shape, so that the gas-phase organic material in the organic material cavity is carried to the spray sheet ; And, for reducing the internal pressure of the Russian the vacuum deposition chamber. As stated in the patent, the equipment described in item 1 (where the deposition cavity is in the longitudinal direction of the gas organic material carrying pipe includes a guide rail on the scope of the patent application of the spray unit in the longitudinal direction of the gas-containing organic material carrying pipe; The fog unit is in contact with the guide rail. P is a guide plate that can slide together with the guide rail. 3 Includes the equipment described in item 1 or 2 of the above-mentioned post, in which the deposition chamber moves to a moving motor that moves the spray unit. The company's materials include the equipment described in item 1 of the π range 'where the gas-phase organic materials are heated at a fixed temperature of $ 6'. The heat is kept at a fixed temperature on the fine dish. The heat is lightly fired ^ Xia Tongtong. The device is as described in the patent application scope item 1 or 4, wherein the gas phase material carrying tube includes a connection with at least two or more organic material cavities. A mixed tank for at least two or more gas-phase organic materials of A 5. •如申請專利範圍第1項所述設備，其中所述喷霧單元由 具有多個小直徑噴霧部分的噴霧氣相有機材料的噴頭實 現·，或者由噴霧部分以管形狀形成的喷霧管實現。 7·如申請專利範圍第1項所述設備，其中所述加熱爐以選 自多邊形、圓柱形或球形的特定形狀形成，其内部與外部 分離。 〃 ηThe device according to item 1 of the scope of patent application, wherein the spraying unit is realized by a spray head for spraying a gas-phase organic material having a plurality of small-diameter spraying sections, or a spraying tube formed in a tube shape by the spraying section . 7. The apparatus according to item 1 of the scope of patent application, wherein the heating furnace is formed in a specific shape selected from a polygon, a cylinder, or a sphere, and the inside is separated from the outside. 〃 η 第36頁 200304956 六、申請專利範圍 8· 一種氣相有機材料沈積方法，包括如下步驟. 第一步驟：與包括有有機材料的有機材料腔的· 的加熱用加熱器輻射熱量並將有機材料加赦c &amp;表面接觸 度的溫度； 熱至两於蒸發溫 第二步驟：通過由輻射熱量的固定溫度加埶 有機材料攜帶管，將由加熱用加熱器蒗發的' *圍繞的氣相 攜帶到沈積腔的喷霧單元，以沈積腔U =有機材料 有機材料的母材料；和 有沈積氣相 第三步驟：將攜帶到喷霧單元的氣相有機材 =置在母材料安裝部分上部中的母材 j力：： 積在母材料上表面上。 務’並沈 9·如申請專利範圍第8項所述方法，其中 所述喷霧單元在氣相有機材料攜帶管 驟的 和/或旋轉。 彳呢句方向水平移動 10·如申請專利範圍第8或9項所述方法，1 士 驟的所述母材料安裝部分在所述第三步 動。 你頁機材枓腔的底表面中水平移 Ui面積基材的氣相有機材料沈積設備，包括. 軋體加熱1§，用於通過調節复 侑匕括· 制器)而加熱惰^ 纏繞在連射外部的用於保持溫度的加熱器管；Page 36 200304956 6. Application scope 8. A vapor-phase organic material deposition method includes the following steps. The first step is to radiate heat with a heating heater of an organic material cavity including an organic material and add the organic material. C &amp; surface contact temperature; heat to two times the evaporation temperature. Second step: by fixing the temperature of the radiant heat to the organic material carrying tube, the gas phase surrounded by the heating heater is carried to the The spraying unit of the deposition chamber is such that the deposition chamber U = the parent material of the organic material organic material; and the deposition gas phase third step: placing the vapor-phase organic material carried in the spraying unit = in the upper part of the mounting portion of the parent material Base material force: accumulates on the top surface of the base material. The method described in item 8 of the scope of the patent application, wherein the spraying unit rotates and / or rotates the gas-phase organic material carrying tube. In other words, horizontal movement in the direction 10. According to the method described in item 8 or 9 of the scope of patent application, the mother material installation portion of step 1 is in the third step. Gas phase organic material deposition equipment for horizontally shifting Ui area of the substrate in the bottom surface of the sheet metal cavity of your machine, including. Rolled body heating 1§, used to heat the inertia by adjusting the complex dagger Winding in continuous shot External heater tube for maintaining temperature; mm 第37頁 200304956mm Page 37 200304956 至少一個沈積源罐 有機材料，並在稀 材料的狀態下由氣 子； ，該沈積源罐用於 釋這些物質從而產 體加熱器加熱高溫 貯存要沈積的氣體和 生氣態的稀釋的有機 氣體和有機材料粒 腔，它們具有用於檢查和調節稀釋的有機* 枓粒子的移動的沈積速率調節單元；At least one deposition source tank for organic material, and gas in a state of dilute material; the deposition source tank is used to release these substances so that the production heater heats the high-temperature storage of the gas to be deposited and the diluted organic gas in a gaseous state; and Organic material particle cavities, which have a deposition rate adjusting unit for checking and regulating the movement of diluted organic * 枓 particles; =二:實Γ控操作從而開啟和關閉稀釋的有機㈣ 用於將從沈積源罐流入的稀釋粒子沈積到寬面* ^中，氣體加熱器加熱氣體以使沈積源罐 :熱源流入到氣體中；閑閥安裝在緩衝腔和二=並 ^而防止由掃描頭熱源引起的在寬面積基材中和 内部的溫度增加。 腔 1二.如申請專利範圍第&quot;項所述設備，其中所述沈積源罐 貯存Ar，He，N2和氧氣作為貯存在其中的非***性惰性氣 體0 、= Two: Realize the control operation to turn the diluted organic ㈣ on and off. Used to deposit the diluted particles flowing from the deposition source tank onto the wide surface * ^, the gas heater heats the gas to make the deposition source tank: the heat source flows into the gas ; Idle valve is installed in the buffer cavity and two = and ^ to prevent the temperature increase in the wide area substrate and inside caused by the heat source of the scan head. Chamber 12. The device as described in item &quot; of the scope of the patent application, wherein the deposition source tank stores Ar, He, N2 and oxygen as non-explosive inert gases stored therein. 13·如申請專利範圍第11項所述設備，其中提供至少一個 以上的所述掃描頭用於同時沈積至少兩種以上的材料。 14·如申請專利範圍第11或12項所述設備，其中加熱器氣 體的溫度保持在200。〇800 °C。 .....13. The device according to item 11 of the scope of patent application, wherein at least one or more of said scanning heads are provided for depositing at least two or more materials simultaneously. 14. The device as described in claim 11 or 12, wherein the temperature of the heater gas is maintained at 200 ° C. 〇800 ° C. ..... 第38頁 200304956 六、申請專利範圍 15.如申請專利範圍第11項所述設備，其中 腔，並進一步包括輔助加熱爐，用‘按照當： 田時再迴圈分離的有機材料的方式迴圈有機材、&amp;。 二驟：種寬面積基材的氣相有機材料沈積方法，包括如下 使用根據氣體量調節並且熱源***到内 將從沈積源罐流入的根據其中存，氣體加熱器， 驟； 心）而調即的惰性氣體加熱的第一步 通過纏繞在連接管外部的加熱器管 在稀釋高溫氣體和有機材料粒 ：二：：驟， 的狀態下，用氣體加熱器加孰貯氣態有機材料 材料的至少一個沈積源罐的^ ;子有要沈積的氣體和有機 檢查和調節稀釋的有機材料粒子法 速率調節單元的用於開啟和關閉稀；：古；根據帶有沈積 動的掃描頭和緩衝腔進行閉控操作的步材料粒子的流 將從閘閥和沈積源罐流入的 $ , 面積基材上的步驟； 子沈積在沈積腔中的寬 在緩衝腔和沈積腔之間安裝 起的寬面積基材中和沈積腔；m由掃描頭的熱源引 將當掃描頭在緩衝腔中移動八μ又、增加的步驟；和 用於有機材料再迴圈的輔助:離出的有機材料通過安裝 口 “、、爐進行收集的步驟。 第39頁 200304956 六、申請專利範圍 17·如申請專利範圍第1 6項所述方法，其中所述沈積源罐 含有Ar ’ He ’ N2和氧氣作為輸入其中的非***性惰性氣 體。 &lt; 18·如申請專利範圍第丨6項所述方法，其中在所述沈積源 罐中產生的氡相有機材料中，與沈積腔内部的麼差為100 -1 0000 倍。Page 38 200304956 VI. Application for patent scope 15. The device as described in the scope of patent application No. 11 which includes a cavity and further includes an auxiliary heating furnace, which is looped back in the manner of when the separated organic materials are looped in accordance with: Organic materials, &amp;. Second step: A method for depositing a wide-area substrate of a vapor-phase organic material, which includes the following steps: adjusting the amount of gas and inserting a heat source into the deposition source tank; The first step of inert gas heating is to dilute the high-temperature gas and organic material particles by heating the heater tube wound on the outside of the connection pipe: in a state of at least one, use a gas heater to store at least one of the gaseous organic material. The deposition source tank contains gas to be deposited and organic inspection and adjustment of the diluted organic material particle method. The rate adjustment unit is used to open and close the diluent; ancient; closed according to the scan head and buffer cavity with deposition movement. The step of controlling the flow of step material particles will flow from the gate valve and the sinking source tank to the area of the substrate; the width of the sub-deposited in the sinking chamber is set in the wide-area substrate installed between the buffer chamber and the sinking chamber And the sink cavity; m is guided by the heat source of the scanning head; when the scanning head moves eight μ in the buffer cavity, additional steps; and the auxiliary for the recirculation of organic materials: The collected organic materials are collected through the installation port and the furnace. Page 39 200304956 VI. Patent application scope 17. The method according to item 16 of the patent application scope, wherein the deposition source tank contains Ar 'He' N2 and oxygen are input as non-explosive inert gases. &Lt; 18. The method according to item 6 of the patent application scope, in which the organic phase material in the tritium phase generated in the deposition source tank is in contact with the interior of the sedimentation cavity? The difference is 100 -1 0000 times. 19·如申請專利範圍第丨6項所述方法，其中所述閘控操作 步驟進一步包括將輸入沈積源罐内部的至少兩種以上的有 機材料混合的步驟。 20如申請專利範圍第1 6項所述方法，其中所述閘控操作 步驟進一步包括通過處理時間調節有機半導體製造系統内 部的厚度的步驟。 21 ·如申請專利範圍第16或17項所 體的溫度保持在2 〇 〇。〇 - 8 0 0 °C。 述方法，其中加熱器氣19. The method according to item 6 of the patent application scope, wherein the gating operation step further comprises a step of mixing at least two kinds of organic materials inputted into the interior of the deposition source tank. 20 The method according to item 16 of the scope of patent application, wherein the gating operation step further includes a step of adjusting a thickness inside the organic semiconductor manufacturing system through a processing time. 21 • Keep the temperature at 2000 as specified in item 16 or 17 of the scope of patent application. 〇-80 0 ° C. Said method, wherein the heater gas 有機;機半導體设備製造方法中的寬面積基材的氣 有機材料沈積方法，包括如下步驟·· 步驟（S710):將基材裝入沈積設備的沈 步_12):預熱沈積源罐並在20〇。“〇〇。〇的溫度下:Organic; organic semiconductor device manufacturing method for a wide area substrate of a gaseous organic material deposition method, including the following steps: Step (S710): loading the substrate into the deposition device in a deep step _12): preheating the deposition source tank And at 20. At a temperature of "〇〇.〇: 200304956200304956 六、申請專利範圍 入高溫氣體 驟（S714) 步 、曰人 一·”啊何料粒子在沈積源罐内 從而形成混合物，並加熱從而產生SGHp(固氣多相) 的操 的沈 步驟（S716) ··通過連接管將大 源罐攜帶到緩衝腔； 步驟（S718):使用緩衝腔中的 相有機材料的流量，並當氣相 時開啟緩衝閘閥； 步驟（S720 ):根據掃描頭 步驟（S722):在經過設定 和 量氣相有機材料SGHP從沈積 氣相有機材料感測器測量氣 有機材料的流量達到設定量 介况積氣相有機材料 積時間之後，移走掃 頭；Sixth, the scope of the patent application is to enter the high-temperature gas step (S714). It is called "a person." "What material particles are in the sedimentation source tank to form a mixture, and the heating is performed to generate SGHp (solid gas multiphase)." (S716) ) ·· Carry the source tank to the buffer chamber through the connection tube; Step (S718): Use the flow rate of the phase organic material in the buffer chamber and open the buffer gate valve when the gas phase; Step (S720): According to the scan head step ( S722): After setting and measuring the gas-phase organic material SGHP from the deposition gas-phase organic material sensor to measure the flow rate of the gas-organic material to the set amount of medium-phase gas-phase organic material accumulation time, remove the scanning head; 並卸載基材。 步驟（S724):關閉緩衝閘閱，And unload the substrate. Step (S724): Close the buffer gate, 第41頁Page 41
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