SU855782A1 - Electron emitter - Google Patents

Electron emitter Download PDF

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Publication number
SU855782A1
SU855782A1 SU772501095A SU2501095A SU855782A1 SU 855782 A1 SU855782 A1 SU 855782A1 SU 772501095 A SU772501095 A SU 772501095A SU 2501095 A SU2501095 A SU 2501095A SU 855782 A1 SU855782 A1 SU 855782A1
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SU
USSR - Soviet Union
Prior art keywords
electrodes
emitter
base
film
activator
Prior art date
Application number
SU772501095A
Other languages
Russian (ru)
Inventor
Евгений Николаевич Петров
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Предприятие П/Я Г-4468
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Priority to SU772501095A priority Critical patent/SU855782A1/en
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Publication of SU855782A1 publication Critical patent/SU855782A1/en

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Description

1one

Изобретение относитс  к электро вакуумным приборам и может быть использовано , в частности, при конструировании вакуумных миниатюрных электронных устройств.The invention relates to electro-vacuum devices and can be used, in particular, in the design of vacuum miniature electronic devices.

Известен ненакаливаемый эмиттер электронов, содержащий пластинчатое диэлектрическое основание, два расположенных на основании контактных электрода и расположенную между последними островковую металлическую пленку fl Недостатками этого эмиттера  вл ютс  низка  эмиссионна  способностьThe non-heated emitter of electrons is known, which contains a plate-like dielectric base, two located on the base of the contact electrodes and an island metal film located between the latter fl. The disadvantages of this emitter are low emissivity

JP JpH низка  эффективность -р- , гдеJP JpH low efficiency -r- where

J - проток проводимости между электродами .J - conduction flow between the electrodes.

Известен также эмиттер электронов, содержащий пластинчатое диэлектрическое основание, контактные пленочные электроды, островковую металлическую пленку и активатор 2.Also known is an electron emitter containing a plate-shaped dielectric base, contact film electrodes, an island metal film and an activator 2.

Однако этот эмиттер имеет значительный паразитный ток эмиттированных электронов на контактные электроды и, как следствие, низкую (5-7%) эффективность, что обусловлено его конструкцией.However, this emitter has a significant parasitic current of the emitted electrons to the contact electrodes and, as a result, low (5-7%) efficiency due to its design.

Цель изобретени  - повышение эффективности эмиттера.The purpose of the invention is to increase the efficiency of the emitter.

Поставленна  цель достигаетс  тем, что в эмиттере электронов, содержащем пластинчатое диэлектрическое основание , контактные пленочные электроды , островковую метгшлическую пленку и активатор, основание имеет щель, контактные электроды располо10 жены на противоположных сторонгис основани , а островкова  пленка и активатор размещены на стенкгис щели.The goal is achieved by the fact that in the emitter of electrons containing a plate-shaped dielectric base, contact film electrodes, an islet mechshilic film and an activator, the base has a slit, the contact electrodes are located on opposite sides of the base, and the islet film and activator are placed on the wall of the slit.

При этом один из электродов может заходить в щель.In this case, one of the electrodes can go into the slot.

1515

Конструкци  эмиттера допускает ослабление или устранение электрического пол , преп тствующего движению первичных электронов на коллекторы (аноды) приборов (например, диодов, 20 триодов и т.д.), в которых используетс  эмиттер. Кроме того, конструкци  допускает уменьшение поверхности токоприемной части контактных электродов и, как следствие, улучшение The design of the emitter allows for the weakening or elimination of the electric field, which prevents the movement of primary electrons to the collectors (anodes) of devices (for example, diodes, 20 triodes, etc.) in which the emitter is used. In addition, the design allows the surface of the current-collecting part of the contact electrodes to be reduced and, as a result, the

25 токораспределени  между контактными электродами с одной стороны и коллекторами (анодами) приборов - с другой.25 current distribution between the contact electrodes on one side and the collectors (anodes) of the devices on the other.

На чертеже показан эмиттер элек30 тронов .The drawing shows the emitter of the electrons.

Эмиттер содержит части 1 пластин-чатого диэлектрического основани , контактные электроды 2 и 3, активированные островковые металлические пленки 4. Основание может быть выполнено из оконного стекла, электроды.. и островкова  пленка из золота, акти ,ватором может служить окись бари . ,The emitter contains parts 1 of a plate-dielectric base, contact electrodes 2 and 3, activated island metal films 4. The base can be made of window glass, electrodes .. and an island film of gold, barium oxide can serve as an activator. ,

Эмиттер работает следук цим образом .The emitter works in the following way.

Электрод 3 подключаетс  к источнику отрицательного (или нулевого;, а электроды 2 к источнику положительного потенциала. При этом островковые пленки 4 эмиттируют электроны в вакуум . Под действием сил электрического пол  в щели электроны движутс  в направлении зазора между электродами 2, частично оседают на торцах последних , а частично выход т из щели и могут быть использованы в электронных приборах (.диодах, триодах и т.д.) Толщина электродов 2 или их заход в щель могут быть сделаны малыми, соответственно  вл етс  малой и паразитна  дол  эмиссионного тока, оседающего на электродах 2. Моделирование устройства по чертежу на ЭВМ показывает, что эмиттированные электроды движутс  в основном вдоль плоскости симметрии щели. I Предлагаемое устройство по сравнению с известным имеет малый паразитный ток электродов и, как следствие , более высокую эффективность, что облегчает создание миниатюрных экономических электронных устройств с ненакаливаемыми эмиттерами.Electrode 3 is connected to a negative (or zero;) source, and electrodes 2 to a source of positive potential. At the same time, island films 4 emit electrons into a vacuum. Under the action of an electric field in the slot, electrons move in the direction of the gap between electrodes 2, partially deposited on the ends of , and partly out of the slot and can be used in electronic devices (diodes, triodes, etc.). The thickness of the electrodes 2 or their entry into the slot can be made small, respectively, is a small and parasitic fraction of Emission current deposited on the electrodes 2. Simulation of the device according to the drawing on a computer shows that the emitted electrodes move mainly along the plane of symmetry of the slit. I The proposed device has a small parasitic current of electrodes compared to the known one and, as a result, higher efficiency, which makes it easier creation of miniature economic electronic devices with non-hot emitters.

Формуле изобретени Invention Formula

1.Эмиттер электронов, содержащий пластинчатое диэлектрическое основание , контактные пленочные электроды , островковую металлическую пленку и активатор, отличающийс  тем, что, с целью повышени  эффективности эмиттерг:, основание имеет щель, контактные электроды расположены на противоположных сторонах основани , а островкова  пленка и активатор размещены на стенках щели.1. An electron emitter containing a plate-shaped dielectric base, contact film electrodes, an island metal film and an activator, characterized in that, in order to increase efficiency, the emitter: the base has a slit, the contact electrodes are located on opposite sides of the base, and the island film and the activator are placed on the walls of the gap.

2.Эмиттер non.i, отличающ и и с   тем, что по крайней мере один из электродов заходит в щель.2. The emitter is non.i, which is also distinguished by the fact that at least one of the electrodes enters the slot.

Источники информации, прин тые во внимание при экспертизеSources of information taken into account in the examination

1.Borzjak P.Y. Mewe Erschelnungen . Phys. Stat. Sol, 1965,v.8,1.Borzjak P.Y. Mewe Erschelnungen. Phys. Stat. Sol, 1965, v.8,

№ 1, p.55-60.№ 1, p.55-60.

2.Авторское свидетельство СССР 482827, кл. Н 01 J 1/30, 1973 (прототип).2. Authors certificate of the USSR 482827, cl. H 01 J 1/30, 1973 (prototype).

Claims (1)

Формул^ изобретенияFormulas of the invention 1. Эмиттер электронов, содержащий пластинчатое диэлектрическое ос10 нование, контактные пленочные электроды, островковую металлическую пленку и активатор, отличающийся тем, что, с целью повышения эффективности эмиттере, основа15 ние имеет щель, контактные электроды расположены на противоположных сторонах основания, а островковая пленка и активатор размещены на стен· к ах щели.1. An electron emitter containing a plate-like dielectric base, contact film electrodes, an island metal film and an activator, characterized in that, in order to increase the efficiency of the emitter, the base has a gap, the contact electrodes are located on opposite sides of the base, and the island film and activator placed on the walls · to the slots ah. 20 2. Эмиттер по п.1, отличаю щ и й с я тем, что по крайней мере один из электродов заходит в щель.20 2. The emitter according to claim 1, characterized by the fact that at least one of the electrodes enters the gap.
SU772501095A 1977-06-28 1977-06-28 Electron emitter SU855782A1 (en)

Priority Applications (1)

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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0299461A2 (en) * 1987-07-15 1989-01-18 Canon Kabushiki Kaisha Electron-emitting device
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
US5030921A (en) * 1990-02-09 1991-07-09 Motorola, Inc. Cascaded cold cathode field emission devices
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5140219A (en) * 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
US5142184A (en) * 1990-02-09 1992-08-25 Kane Robert C Cold cathode field emission device with integral emitter ballasting
US5142256A (en) * 1991-04-04 1992-08-25 Motorola, Inc. Pin diode with field emission device switch
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5173634A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5173635A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Bi-directional field emission device
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
US5218273A (en) * 1991-01-25 1993-06-08 Motorola, Inc. Multi-function field emission device
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array
US5281890A (en) * 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
US5432407A (en) * 1990-12-26 1995-07-11 Motorola, Inc. Field emission device as charge transport switch for energy storage network
US5465024A (en) * 1989-09-29 1995-11-07 Motorola, Inc. Flat panel display using field emission devices
US5661362A (en) * 1987-07-15 1997-08-26 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532544A (en) * 1987-07-15 1996-07-02 Ganon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
EP0299461A3 (en) * 1987-07-15 1990-01-10 Canon Kabushiki Kaisha Electron-emitting device
US5872541A (en) * 1987-07-15 1999-02-16 Canon Kabushiki Kaisha Method for displaying images with electron emitting device
EP0299461A2 (en) * 1987-07-15 1989-01-18 Canon Kabushiki Kaisha Electron-emitting device
US5661362A (en) * 1987-07-15 1997-08-26 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US5066883A (en) * 1987-07-15 1991-11-19 Canon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
US5749763A (en) * 1987-07-15 1998-05-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulted from electrodes
US5759080A (en) * 1987-07-15 1998-06-02 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated form electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
US5465024A (en) * 1989-09-29 1995-11-07 Motorola, Inc. Flat panel display using field emission devices
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
US5142184A (en) * 1990-02-09 1992-08-25 Kane Robert C Cold cathode field emission device with integral emitter ballasting
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5030921A (en) * 1990-02-09 1991-07-09 Motorola, Inc. Cascaded cold cathode field emission devices
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5281890A (en) * 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
US5173635A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Bi-directional field emission device
US5173634A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5432407A (en) * 1990-12-26 1995-07-11 Motorola, Inc. Field emission device as charge transport switch for energy storage network
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
US5218273A (en) * 1991-01-25 1993-06-08 Motorola, Inc. Multi-function field emission device
US5140219A (en) * 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
US5142256A (en) * 1991-04-04 1992-08-25 Motorola, Inc. Pin diode with field emission device switch

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