SI2310554T1 - Postopek in naprava za nanašanje filma na substrat - Google Patents

Postopek in naprava za nanašanje filma na substrat

Info

Publication number
SI2310554T1
SI2310554T1 SI200930247T SI200930247T SI2310554T1 SI 2310554 T1 SI2310554 T1 SI 2310554T1 SI 200930247 T SI200930247 T SI 200930247T SI 200930247 T SI200930247 T SI 200930247T SI 2310554 T1 SI2310554 T1 SI 2310554T1
Authority
SI
Slovenia
Prior art keywords
voltage
substrate
electrodes
reaction chamber
inductor
Prior art date
Application number
SI200930247T
Other languages
English (en)
Inventor
Eric Tixhon
Joseph Leclercq
Eric Michel
Original Assignee
Agc Glass Europe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Glass Europe filed Critical Agc Glass Europe
Publication of SI2310554T1 publication Critical patent/SI2310554T1/sl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemically Coating (AREA)
SI200930247T 2008-07-16 2009-07-16 Postopek in naprava za nanašanje filma na substrat SI2310554T1 (sl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08160507A EP2145978A1 (fr) 2008-07-16 2008-07-16 Procédé et installation pour le dépôt de couches sur un substrat
PCT/EP2009/059155 WO2010007133A1 (en) 2008-07-16 2009-07-16 Process and installation for depositing films onto a substrate
EP09797507A EP2310554B8 (en) 2008-07-16 2009-07-16 Process and installation for depositing films onto a substrate

Publications (1)

Publication Number Publication Date
SI2310554T1 true SI2310554T1 (sl) 2012-06-29

Family

ID=40260735

Family Applications (1)

Application Number Title Priority Date Filing Date
SI200930247T SI2310554T1 (sl) 2008-07-16 2009-07-16 Postopek in naprava za nanašanje filma na substrat

Country Status (10)

Country Link
US (2) US8753723B2 (sl)
EP (2) EP2145978A1 (sl)
JP (1) JP5372149B2 (sl)
CN (1) CN102112657B (sl)
AT (1) ATE546565T1 (sl)
BR (1) BRPI0915768A2 (sl)
EA (1) EA019460B1 (sl)
PL (1) PL2310554T3 (sl)
SI (1) SI2310554T1 (sl)
WO (1) WO2010007133A1 (sl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2145701A1 (fr) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour la préparation de surface par décharge à barrière diélectrique
EP2326151A1 (fr) * 2009-11-24 2011-05-25 AGC Glass Europe Procédé et dispositif de polarisation d'une électrode DBD
WO2013040486A1 (en) 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
WO2013079798A1 (en) * 2011-12-01 2013-06-06 Beneq Oy Surface treatment apparatus and method
CH705973B1 (fr) * 2012-01-09 2016-09-15 L'université De Genève Procédé de traitement de surface d'un objet.
CN102969886A (zh) * 2012-11-25 2013-03-13 沈阳一特电工有限公司 等离子体制粉弧源
EA027687B1 (ru) 2012-12-21 2017-08-31 Асахи Гласс Компани Лимитед Способ и устройство зажигания для пар электродов диэлектрического барьерного разряда (дбр)
US10276352B2 (en) 2012-12-21 2019-04-30 AGC Inc. Pair of electrodes for DBD plasma process
US20140188097A1 (en) * 2012-12-31 2014-07-03 Cold Plasma Medical Technologies, Inc. Method and Apparatus for Dielectric Barrier Discharge Wand Cold Plasma Device
EP3184666B1 (en) * 2015-12-23 2018-06-13 Singulus Technologies AG System and method for gas phase deposition
KR101889826B1 (ko) * 2016-11-07 2018-08-21 이동주 입체 처리물에 균일한 미세 필라멘트 방전을 발생시키는 장치
US11533801B2 (en) * 2017-11-30 2022-12-20 Corning Incorporated Atmospheric pressure linear rf plasma source for surface modification and treatment
RU191710U1 (ru) * 2018-12-21 2019-08-19 АНО ВО "Белгородский университет кооперации, экономики и права" Устройство для иризации изделий из стекла
RU2721756C1 (ru) * 2019-06-11 2020-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева - КАИ" Способ получения охватывающего барьерного разряда и устройство для осуществления способа получения охватывающего барьерного разряда

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780255A (en) * 1971-09-30 1973-12-18 Celanese Corp Apparatus for heat treatment of substrates
JP2811820B2 (ja) * 1989-10-30 1998-10-15 株式会社ブリヂストン シート状物の連続表面処理方法及び装置
FR2675139B1 (fr) * 1991-04-09 1993-11-26 Saint Gobain Vitrage Internal Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche.
US5392018A (en) * 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US5776553A (en) * 1996-02-23 1998-07-07 Saint Gobain/Norton Industrial Ceramics Corp. Method for depositing diamond films by dielectric barrier discharge
CA2295729A1 (en) * 1997-07-14 1999-01-28 John Lynch Plasma treater systems and treatment methods
US5910886A (en) * 1997-11-07 1999-06-08 Sierra Applied Sciences, Inc. Phase-shift power supply
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
CN2458622Y (zh) * 2000-11-15 2001-11-07 中国科学院金属研究所 一种脉冲微波强化高压低温等离子体化学反应装置
EP2233605B1 (en) * 2000-12-12 2012-09-26 Konica Corporation Optical film comprising an anti-reflection layer
JP2003073836A (ja) * 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
EP1471541B1 (en) * 2002-01-28 2016-10-19 Nippon Sheet Glass Company, Limited Glass substrate coated with a transparent conductive film and photoelectric conversion device including said glass substrate
JP4710216B2 (ja) * 2002-06-11 2011-06-29 コニカミノルタホールディングス株式会社 薄膜形成方法
US6774569B2 (en) * 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
GB0217553D0 (en) 2002-07-30 2002-09-11 Sheel David W Titania coatings by CVD at atmospheric pressure
DE10252146B4 (de) * 2002-11-09 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zum Erzeugen einer hochfrequenten Wechselspannung sowie Hochfrequenz-Leistungsverstärker dafür
JP4558365B2 (ja) * 2004-03-26 2010-10-06 株式会社神戸製鋼所 プラズマ処理装置及びプラズマ処理方法
JP4108108B2 (ja) * 2004-03-29 2008-06-25 三菱電機株式会社 プラズマ発生用電源装置
GB0410749D0 (en) * 2004-05-14 2004-06-16 Dow Corning Ireland Ltd Coating apparatus
MXPA06013380A (es) 2004-05-20 2007-01-23 Dow Global Technologies Inc Deposito mejorado de plasma de vapor quimico de oxido de metal.
JP2006032303A (ja) * 2004-07-22 2006-02-02 Sharp Corp 高周波プラズマ処理装置および処理方法
JP4747665B2 (ja) * 2005-05-11 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
JP2009525381A (ja) * 2006-02-02 2009-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． プラズマによる表面処理方法及び表面処理装置
US7655110B2 (en) * 2006-03-29 2010-02-02 Tokyo Electron Limited Plasma processing apparatus
JP5254533B2 (ja) * 2006-03-31 2013-08-07 東京エレクトロン株式会社 プラズマ処理装置と方法
EP2145701A1 (fr) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour la préparation de surface par décharge à barrière diélectrique
EP2145979A1 (fr) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur les deux faces d'un substrat de façon simultanée

Also Published As

Publication number Publication date
EP2310554B8 (en) 2012-04-11
US10023961B2 (en) 2018-07-17
US8753723B2 (en) 2014-06-17
BRPI0915768A2 (pt) 2015-11-03
US20110183083A1 (en) 2011-07-28
JP5372149B2 (ja) 2013-12-18
EP2310554A1 (en) 2011-04-20
US20140230731A1 (en) 2014-08-21
CN102112657B (zh) 2014-09-03
EP2310554B1 (en) 2012-02-22
WO2010007133A1 (en) 2010-01-21
PL2310554T3 (pl) 2012-07-31
EA201100221A1 (ru) 2011-08-30
CN102112657A (zh) 2011-06-29
ATE546565T1 (de) 2012-03-15
EP2145978A1 (fr) 2010-01-20
EA019460B1 (ru) 2014-03-31
JP2011528066A (ja) 2011-11-10

Similar Documents

Publication Publication Date Title
SI2310554T1 (sl) Postopek in naprava za nanašanje filma na substrat
EP1918967B1 (en) Method of forming a film by deposition from a plasma
SI2300633T1 (sl) Postopek in naprava za nanašanje filma na obe strani substrata istočasno
GB2427407A (en) Coating of a polymer layer using low power pulsed plasma in a plasma chamber of a large volume
EA201100220A1 (ru) Способ и установка для подготовки поверхности диэлектрическим барьерным разрядом
Kim et al. Effects of applied power on hydrogenated amorphous carbon (aC: H) film deposition by low frequency (60 Hz) plasma-enhanced chemical vapor deposition (PECVD)
Lundin et al. High power pulsed plasma enhanced chemical vapor deposition: A brief overview of general concepts and early results
CN100395371C (zh) 微波等离子体增强弧辉渗镀涂层的装置及工艺
KR20160060628A (ko) AlN을 함유한 압전막을 증착하는 방법 및 AlN을 함유한 압전막
Kimura et al. Properties of inductively coupled radio frequency CH4/H2 plasmas: experiments and global model
TW200502426A (en) Deposition apparatus and method
Man et al. Influence of plasma condition on carbon nanotube growth by rf-PECVD
JP2004217975A (ja) 炭素薄膜及びその製造方法
Bae et al. High-speed deposition of graphite-like carbon film by Ar/C6H6 surface-wave plasma with high-voltage pulse biasing
JP5792986B2 (ja) 表面処理装置および表面処理方法
JPH04118884A (ja) 固体放電素子
Zhang et al. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition
JP5280784B2 (ja) 成膜装置
JPH0387373A (ja) プラズマｃｖｄ薄膜の形成法
Yamamoto et al. Plasma states and carbon film deposition in glow discharge connected to dielectric barrier discharge
Al Mamun et al. Preparation of hydrogenated amorphous carbon films using a microsecond-pulsed DC capacitive-coupled plasma chemical vapor deposition system operated at high frequency up to 400 kHz
KR20100088346A (ko) 연료전지 금속분리판용 크롬질화물 탄화수소박막 제조방법 및 그 제품
JP2014173130A (ja) プラズマ成膜装置および薄膜の製造方法
KR102661051B1 (ko) 중주파 플라즈마 화학기상증착 장치와 Xylene 전구체 기반 고속 유사 다이아몬드 박막 증착방법 및 이에 의해 제조된 유사 다이아몬드 박막
Yukimura et al. Ar/O2 gas pressure dependence of atomic concentration of zirconia prepared by zirconium pulse arc PBII&D