SG83107A1 - Semiconductor memory device and method of fabricating the same - Google Patents

Semiconductor memory device and method of fabricating the same

Info

Publication number
SG83107A1
SG83107A1 SG9804406A SG1998004406A SG83107A1 SG 83107 A1 SG83107 A1 SG 83107A1 SG 9804406 A SG9804406 A SG 9804406A SG 1998004406 A SG1998004406 A SG 1998004406A SG 83107 A1 SG83107 A1 SG 83107A1
Authority
SG
Singapore
Prior art keywords
fabricating
same
memory device
semiconductor memory
semiconductor
Prior art date
Application number
SG9804406A
Other languages
English (en)
Inventor
Yamaguchi Ken
Kimura Shinichiro
Horiuchi Masatada
Teshima Tatsuya
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG83107A1 publication Critical patent/SG83107A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
SG9804406A 1997-11-04 1998-11-02 Semiconductor memory device and method of fabricating the same SG83107A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30155997A JP3421230B2 (ja) 1997-11-04 1997-11-04 半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
SG83107A1 true SG83107A1 (en) 2001-09-18

Family

ID=17898403

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9804406A SG83107A1 (en) 1997-11-04 1998-11-02 Semiconductor memory device and method of fabricating the same

Country Status (6)

Country Link
US (2) US6157055A (ja)
JP (1) JP3421230B2 (ja)
KR (1) KR100566411B1 (ja)
CN (1) CN1137518C (ja)
SG (1) SG83107A1 (ja)
TW (1) TW437013B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326146C (zh) * 1999-10-15 2007-07-11 沈明东 堆叠式存储器模组
DE10010821A1 (de) 2000-02-29 2001-09-13 Infineon Technologies Ag Verfahren zur Erhöhung der Kapazität in einem Speichergraben und Grabenkondensator mit erhöhter Kapazität
US6687648B1 (en) * 2001-11-02 2004-02-03 Cypress Semiconductor Corporation Method of predicting reliabilty of oxide-nitride-oxide based non-volatile memory
KR100678285B1 (ko) 2005-01-20 2007-02-02 삼성전자주식회사 발광 다이오드용 양자점 형광체 및 그의 제조방법
CN100409428C (zh) * 2005-04-28 2008-08-06 旺宏电子股份有限公司 非易失性存储器及其制造方法以及操作方法
JP2007067068A (ja) * 2005-08-30 2007-03-15 Fujitsu Ltd 半導体装置の製造方法
CN100414667C (zh) * 2006-08-07 2008-08-27 友达光电股份有限公司 储存电容及其形成方法与包括该储存电容的显示器
US8547684B2 (en) * 2009-12-17 2013-10-01 Schneider Electric USA, Inc. Panelboard having a parallel feeder bars distribution

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142438A (en) * 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5373177A (en) * 1992-10-01 1994-12-13 Nec Corporation Semiconductor device with improved electric charge storage characteristics
US5438541A (en) * 1993-09-07 1995-08-01 Nec Corporation Semiconductor dynamic random access memory cell free from leakage between accumulating electrode and counter electrode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108392A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device
JPH07112049B2 (ja) * 1992-01-09 1995-11-29 インターナショナル・ビジネス・マシーンズ・コーポレイション ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法
US5250829A (en) * 1992-01-09 1993-10-05 International Business Machines Corporation Double well substrate plate trench DRAM cell array
US5343356A (en) * 1992-12-31 1994-08-30 Siemens Energy & Automation, Inc. Panelboard
US6476435B1 (en) * 1997-09-30 2002-11-05 Micron Technology, Inc. Self-aligned recessed container cell capacitor
JP4931267B2 (ja) * 1998-01-29 2012-05-16 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142438A (en) * 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5373177A (en) * 1992-10-01 1994-12-13 Nec Corporation Semiconductor device with improved electric charge storage characteristics
US5438541A (en) * 1993-09-07 1995-08-01 Nec Corporation Semiconductor dynamic random access memory cell free from leakage between accumulating electrode and counter electrode

Also Published As

Publication number Publication date
US6329238B1 (en) 2001-12-11
TW437013B (en) 2001-05-28
KR19990044902A (ko) 1999-06-25
KR100566411B1 (ko) 2008-01-17
JP3421230B2 (ja) 2003-06-30
JPH11135752A (ja) 1999-05-21
CN1216862A (zh) 1999-05-19
US6157055A (en) 2000-12-05
CN1137518C (zh) 2004-02-04

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