SG63803A1 - Epoxy-resin composition to seal semiconductors and resin-sealed semiconductor device - Google Patents

Epoxy-resin composition to seal semiconductors and resin-sealed semiconductor device

Info

Publication number
SG63803A1
SG63803A1 SG1998000135A SG1998000135A SG63803A1 SG 63803 A1 SG63803 A1 SG 63803A1 SG 1998000135 A SG1998000135 A SG 1998000135A SG 1998000135 A SG1998000135 A SG 1998000135A SG 63803 A1 SG63803 A1 SG 63803A1
Authority
SG
Singapore
Prior art keywords
resin
resin composition
semiconductor device
epoxy
sealed semiconductor
Prior art date
Application number
SG1998000135A
Other languages
English (en)
Inventor
Masayuki Tanaka
Yumiko Tsurumi
Original Assignee
Toray Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries filed Critical Toray Industries
Publication of SG63803A1 publication Critical patent/SG63803A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
SG1998000135A 1997-01-23 1998-01-19 Epoxy-resin composition to seal semiconductors and resin-sealed semiconductor device SG63803A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1072197 1997-01-23

Publications (1)

Publication Number Publication Date
SG63803A1 true SG63803A1 (en) 1999-03-30

Family

ID=11758160

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000135A SG63803A1 (en) 1997-01-23 1998-01-19 Epoxy-resin composition to seal semiconductors and resin-sealed semiconductor device

Country Status (7)

Country Link
US (2) US6214904B1 (de)
EP (1) EP0867475B1 (de)
KR (1) KR100487798B1 (de)
CN (1) CN1149668C (de)
DE (1) DE69840353D1 (de)
SG (1) SG63803A1 (de)
TW (1) TW457254B (de)

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US6617399B2 (en) * 1999-12-17 2003-09-09 Henkel Loctite Corporation Thermosetting resin compositions comprising epoxy resins, adhesion promoters, curatives based on the combination of nitrogen compounds and transition metal complexes, and polysulfide tougheners
US6670430B1 (en) * 1999-12-17 2003-12-30 Henkel Loctite Corporation Thermosetting resin compositions comprising epoxy resins, adhesion promoters, and curatives based on the combination of nitrogen compounds and transition metal complexes
US7019410B1 (en) * 1999-12-21 2006-03-28 Micron Technology, Inc. Die attach material for TBGA or flexible circuitry
JP4351348B2 (ja) * 2000-01-27 2009-10-28 リンテック株式会社 保護層を有するicカードの製造方法
JP3598255B2 (ja) * 2000-03-17 2004-12-08 シャープ株式会社 半導体装置のベーク方法
US6750301B1 (en) * 2000-07-07 2004-06-15 National Starch And Chemical Investment Holding Corporation Die attach adhesives with epoxy compound or resin having allyl or vinyl groups
US6403222B1 (en) * 2000-09-22 2002-06-11 Henkel Corporation Wax-modified thermosettable compositions
DE10144871A1 (de) * 2001-09-12 2003-03-27 Bosch Gmbh Robert Vergußmasse mit hoher thermischer Stabilität
JP3890947B2 (ja) * 2001-10-17 2007-03-07 松下電器産業株式会社 高周波半導体装置
US7323360B2 (en) * 2001-10-26 2008-01-29 Intel Corporation Electronic assemblies with filled no-flow underfill
US6951907B1 (en) 2001-11-19 2005-10-04 Henkel Corporation Composition of epoxy resin, secondary amine-functional adhesion promotor and curative of nitrogen-compound and transition metal complex
US6893736B2 (en) * 2001-11-19 2005-05-17 Henkel Corporation Thermosetting resin compositions useful as underfill sealants
TWI302153B (en) * 2003-02-27 2008-10-21 Eternal Chemical Co Ltd Material composition for packaging photo-sensitive elements and method of using the same
JP4474113B2 (ja) * 2003-04-07 2010-06-02 日立化成工業株式会社 封止用固形エポキシ樹脂成形材料及び半導体装置
WO2005004563A1 (ja) * 2003-07-03 2005-01-13 Hitachi, Ltd. モジュール装置及びその製造方法
US7647682B2 (en) * 2004-06-17 2010-01-19 Adams Marve D Motor mount repair system and methods therefor
NO328520B1 (no) * 2004-11-03 2010-03-08 Elkem As Polyamidplast med høy flammemotstandsdyktighet og god prosesserbarhet
EP1861880B1 (de) * 2005-03-25 2012-06-20 FUJIFILM Corporation Verfahren zur herstellung eines halbleiter-bildgebungsbauelements
JP5504550B2 (ja) * 2006-01-23 2014-05-28 日立化成株式会社 封止用エポキシ樹脂成形材料及び電子部品装置
US7675186B2 (en) * 2006-09-01 2010-03-09 Powertech Technology Inc. IC package with a protective encapsulant and a stiffening encapsulant
CN101952262B (zh) 2008-02-21 2012-07-18 亨斯迈先进材料美国有限责任公司 用于高tg应用的无卤苯并噁嗪基可固化组合物
WO2009150985A1 (ja) * 2008-06-12 2009-12-17 住友ベークライト株式会社 半導体素子搭載基板
US20110089549A1 (en) * 2008-10-10 2011-04-21 Sumitomo Bakelite Co., Ltd Semiconductor device
CN102575084B (zh) * 2009-09-29 2017-03-29 日立化成工业株式会社 多层树脂片及其制造方法、多层树脂片固化物的制造方法、以及高热传导树脂片层叠体及其制造方法
JP4889828B2 (ja) 2010-01-26 2012-03-07 積水化学工業株式会社 太陽電池用封止材、太陽電池保護シート及び太陽電池モジュールの製造方法
WO2011148627A1 (ja) * 2010-05-28 2011-12-01 住友ベークライト株式会社 エステル化物の製造方法
JP5272199B2 (ja) * 2010-11-10 2013-08-28 日立化成株式会社 半導体装置の製法
WO2013008680A1 (ja) * 2011-07-13 2013-01-17 株式会社ダイセル 硬化性エポキシ樹脂組成物
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Also Published As

Publication number Publication date
DE69840353D1 (de) 2009-01-29
KR100487798B1 (ko) 2005-09-26
EP0867475B1 (de) 2008-12-17
CN1198010A (zh) 1998-11-04
US6214904B1 (en) 2001-04-10
TW457254B (en) 2001-10-01
EP0867475A3 (de) 1998-11-18
EP0867475A2 (de) 1998-09-30
KR19980070748A (ko) 1998-10-26
CN1149668C (zh) 2004-05-12
US6617701B2 (en) 2003-09-09
US20020014706A1 (en) 2002-02-07

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