SG137657A1 - Method and apparatus for performing model-based layout conversion for use with dipole illumination - Google Patents

Method and apparatus for performing model-based layout conversion for use with dipole illumination

Info

Publication number
SG137657A1
SG137657A1 SG200306762-6A SG2003067626A SG137657A1 SG 137657 A1 SG137657 A1 SG 137657A1 SG 2003067626 A SG2003067626 A SG 2003067626A SG 137657 A1 SG137657 A1 SG 137657A1
Authority
SG
Singapore
Prior art keywords
features
target pattern
horizontal
mask
vertical
Prior art date
Application number
SG200306762-6A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Kurt E Wampler
Markus Franciscus Ant Eurlings
Jang Fung Chen
Noel Corcoran
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG137657A1 publication Critical patent/SG137657A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200306762-6A 2002-11-12 2003-11-11 Method and apparatus for performing model-based layout conversion for use with dipole illumination SG137657A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42532302P 2002-11-12 2002-11-12

Publications (1)

Publication Number Publication Date
SG137657A1 true SG137657A1 (en) 2007-12-28

Family

ID=32176755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200306762-6A SG137657A1 (en) 2002-11-12 2003-11-11 Method and apparatus for performing model-based layout conversion for use with dipole illumination

Country Status (8)

Country Link
US (3) US7138212B2 (ko)
EP (1) EP1420294B1 (ko)
JP (1) JP2004177968A (ko)
KR (1) KR100592580B1 (ko)
CN (1) CN1530746B (ko)
DE (1) DE60323036D1 (ko)
SG (1) SG137657A1 (ko)
TW (1) TWI284786B (ko)

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TWI272448B (en) * 2002-07-26 2007-02-01 Asml Masktools Bv Orientation dependent shielding for use with dipole illumination techniques
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
SG144723A1 (en) * 2003-06-30 2008-08-28 Asml Masktools Bv A method, program product and apparatus for generating assist features utilizing an image field map
JP4524174B2 (ja) * 2003-11-05 2010-08-11 エーエスエムエル マスクツールズ ビー．ブイ． 固有分解に基づくｏｐｃモデル
KR100556044B1 (ko) * 2003-12-31 2006-03-03 동부아남반도체 주식회사 다마신 공정에서의 패턴 향상 방법
KR100598980B1 (ko) 2004-09-17 2006-07-12 주식회사 하이닉스반도체 다이폴 노광 장치에서의 수직 패턴의 레이아웃
JP5106747B2 (ja) * 2004-10-27 2012-12-26 ルネサスエレクトロニクス株式会社 パターン形成方法、半導体装置の製造方法及び露光用マスクセット
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US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
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US20070046917A1 (en) * 2005-08-31 2007-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method that compensates for reticle induced CDU
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US20070087291A1 (en) * 2005-10-18 2007-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography process to reduce interference
TW200719095A (en) * 2005-11-09 2007-05-16 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
KR100812090B1 (ko) * 2005-11-30 2008-03-07 동부일렉트로닉스 주식회사 마스크패턴 및 마스크패턴 형성방법
US7547495B2 (en) * 2005-12-21 2009-06-16 Asml Netherlands B.V Device manufacturing method and computer program product
US7643976B2 (en) * 2006-02-28 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for identifying lens aberration sensitive patterns in an integrated circuit chip
EP1843202B1 (en) * 2006-04-06 2015-02-18 ASML Netherlands B.V. Method for performing dark field double dipole lithography
US8521481B2 (en) * 2006-08-30 2013-08-27 Asml Masktools B.V. Method, program product and apparatus for modeling resist development of a lithography process
US7966585B2 (en) * 2006-12-13 2011-06-21 Mentor Graphics Corporation Selective shielding for multiple exposure masks
US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
KR100818713B1 (ko) * 2007-03-23 2008-04-02 주식회사 하이닉스반도체 노광 과정 중의 스컴을 억제하는 리소그래피 방법
US8713483B2 (en) 2007-06-05 2014-04-29 Mentor Graphics Corporation IC layout parsing for multiple masks
DE102007033243A1 (de) * 2007-07-12 2009-01-15 Carl Zeiss Sms Gmbh Verfahren und Anordnung zur Analyse einer Gruppe von Photolithographiemasken
EP2040120B1 (en) 2007-09-19 2011-03-02 Canon Kabushiki Kaisha Mask data generation method, mask fabrication method, exposure method, device fabrication method, and program
JP2009093138A (ja) * 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
US20090091729A1 (en) * 2007-10-05 2009-04-09 Sajan Marokkey Lithography Systems and Methods of Manufacturing Using Thereof
US8715909B2 (en) * 2007-10-05 2014-05-06 Infineon Technologies Ag Lithography systems and methods of manufacturing using thereof
KR100961203B1 (ko) * 2008-04-29 2010-06-09 주식회사 하이닉스반도체 스페이서 패터닝 기술을 이용한 미세 패턴 형성 방법
US8250495B2 (en) * 2009-01-16 2012-08-21 Mentor Graphics Corporation Mask decomposition for double dipole lithography
US8399183B2 (en) * 2009-05-13 2013-03-19 Synopsys, Inc. Patterning a single integrated circuit layer using automatically-generated masks and multiple masking layers
US8805630B2 (en) * 2009-08-25 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for modeling in semiconductor fabrication
US8347240B2 (en) 2010-10-29 2013-01-01 International Business Machines Corporation Split-layer design for double patterning lithography
US8932785B2 (en) * 2012-10-16 2015-01-13 Advanced Mask Technology Center Gmbh & Co. Kg EUV mask set and methods of manufacturing EUV masks and integrated circuits
JP6598421B2 (ja) * 2013-02-22 2019-10-30 キヤノン株式会社 マスクパターンの決定方法、プログラム、情報処理装置
US9262820B2 (en) * 2014-05-19 2016-02-16 United Microelectronics Corporation Method and apparatus for integrated circuit design
US10331040B2 (en) * 2015-10-08 2019-06-25 Asml Netherlands B.V. Method of controlling a lithographic apparatus and device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

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Also Published As

Publication number Publication date
US20100167183A1 (en) 2010-07-01
US7985515B2 (en) 2011-07-26
KR100592580B1 (ko) 2006-06-26
TW200421042A (en) 2004-10-16
EP1420294B1 (en) 2008-08-20
US20070042277A1 (en) 2007-02-22
US7666554B2 (en) 2010-02-23
CN1530746B (zh) 2010-04-28
EP1420294A2 (en) 2004-05-19
CN1530746A (zh) 2004-09-22
US20040142251A1 (en) 2004-07-22
JP2004177968A (ja) 2004-06-24
TWI284786B (en) 2007-08-01
KR20040044339A (ko) 2004-05-28
EP1420294A3 (en) 2005-05-04
US7138212B2 (en) 2006-11-21
DE60323036D1 (de) 2008-10-02

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